Substrate processing apparatus

Abstract

To provide a substrate processing device which includes a shower head having a shower plate and a cooling plate, inhibits warpage of the cooling plate, and prevents or reduces damage of the shower plate.SOLUTION: A substrate processing device includes: a plasma processing chamber; a substrate support part which is provided in the plasma processing chamber and supports a substrate; and a shower head facing the substrate support part. The shower head includes: a shower plate provided with a gas discharge port for discharging a gas; a cooling plate which holds the shower plate and is provided with a refrigerant passage to which a refrigerant is supplied and a gas supply passage; and multiple gas diffusion chambers which are provided between the shower plate and the cooling plate and communicate with the gas discharge port and the gas supply passage. The refrigerant passage is at least partially disposed on a heat transfer surface between the shower plate and the cooling plate in a plan view.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses an apparatus including a shower head disposed facing a substrate disposed on an upper surface of a mounting table, the shower head having a surface plate with a plurality of holes, an intermediate plate having a gas flow path and a heater for heating a gas, and a top plate thermally connected to the intermediate plate.

[0003] Patent Document 2 discloses a shower head electrode assembly having an upper electrode in which a gas flow path is formed, a backing member having a plenum formed on a lower surface, and a heat control plate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] On one side, the present disclosure provides a substrate processing apparatus including a shower head having a shower plate and a cooling plate, which suppresses warping of the cooling plate and prevents or reduces breakage of the shower plate.

Means for Solving the Problems

[0006] To solve the above problems, according to one aspect, there is provided a substrate processing apparatus including a plasma processing chamber, a substrate support portion provided in the plasma processing chamber for supporting a substrate, and a shower head facing the substrate support portion. The shower head includes a shower plate formed with gas discharge ports for discharging gas, a cooling plate that holds the shower plate and is formed with a refrigerant flow path and a gas supply flow path for supplying refrigerant, and a plurality of gas diffusion chambers formed between the shower plate and the cooling plate and communicating with the gas discharge ports and the gas supply flow path respectively. At least a part of the refrigerant flow path is arranged on the heat transfer surface between the shower plate and the cooling plate in a plan view.

Advantages of the Invention

[0007] According to one aspect, there is provided a substrate processing apparatus including a shower head having a shower plate and a cooling plate, which can suppress warping of the cooling plate and prevent or reduce breakage of the shower plate.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Embodiments for Carrying Out the Invention

[0009] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0010] Hereinafter, a configuration example of a plasma processing system will be described. FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled substrate processing apparatus.

[0011] The plasma processing system includes a capacitively coupled substrate processing apparatus 1 and a control unit 2. The capacitively coupled substrate processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The substrate processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support unit 11. In one embodiment, the showerhead 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas discharge port for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0012] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. The wafer is an example of the substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Accordingly, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0013] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 described later may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Accordingly, the substrate support portion 11 includes at least one lower electrode.

[0014] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0015] Further, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0016] The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a (13a1 to 13a3), at least one gas supply flow path 13b (13b1 to 13b3), at least one gas diffusion chamber 13c (13c1 to 13c3), and a plurality of gas introduction ports 13d (13d1 to 13d3). The process gas supplied to the gas supply port 13a passes through the gas supply flow path 13b and the gas diffusion chamber 13c and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13d.

[0017] Further, the shower head 13 shown in FIG. 1 has a gas introduction portion 51, a gas introduction portion 52, and a gas introduction portion 53. The gas introduction portion 51 introduces gas into the central region (center region) of the substrate W in the plasma processing chamber 10. The gas introduction portion 52 introduces gas into an outer region (intermediate region) rather than the gas introduction portion 51. The gas introduction portion 53 introduces gas into an outer region (edge region) rather than the gas introduction portion 52. The gas introduction portion 51, the gas introduction portion 52, and the gas introduction portion 53 are arranged concentrically.

[0018] The gas supply port 13a has a gas supply port 13a1, a gas supply port 13a2, and a gas supply port 13a3. The gas supply port 13a1 supplies the gas introduced into the gas introduction part 51. The gas supply port 13a2 supplies the gas introduced into the gas introduction part 52. The gas supply port 13a3 supplies the gas introduced into the gas introduction part 53.

[0019] The gas supply flow path 13b has a gas supply flow path 13b1, a gas supply flow path 13b2, and a gas supply flow path 13b3. The gas supply flow path 13b1 connects the gas supply port 13a1 and the gas diffusion chamber 13c1. The gas supply flow path 13b2 connects the gas supply port 13a2 and the gas diffusion chamber 13c2. The gas supply flow path 13b3 connects the gas supply port 13a3 and the gas diffusion chamber 13c3.

[0020] The gas diffusion chamber 13c has a gas diffusion chamber 13c1, a gas diffusion chamber 13c2, and a gas diffusion chamber 13c3. The gas supply flow path 13b1 and a plurality of gas introduction ports 13d1 are connected to the gas diffusion chamber 13c1 so that gas can flow through. The gas introduction part 51 has the gas supply port 13a1, the gas supply flow path 13b1, the gas diffusion chamber 13c1, and a plurality of gas introduction ports 13d1. Also, the gas supply flow path 13b2 and a plurality of gas introduction ports 13d2 are connected to the gas diffusion chamber 13c2 so that gas can flow through. The gas introduction part 52 has the gas supply port 13a2, the gas supply flow path 13b2, the gas diffusion chamber 13c2, and a plurality of gas introduction ports 13d2. Also, the gas supply flow path 13b3 and a plurality of gas introduction ports 13d3 are connected to the gas diffusion chamber 13c3 so that gas can flow through. The gas introduction part 53 has the gas supply port 13a3, the gas supply flow path 13b3, the gas diffusion chamber 13c3, and a plurality of gas introduction ports 13d3.

[0021] Also, the shower head 13 includes at least one upper electrode. In addition to the shower head 13, the gas introduction part may include one or a plurality of side gas injectors (SGI) attached to one or a plurality of openings formed in the side wall 10a.

[0022] Further, the shower head 13 has a cooling plate 131 and a shower plate 132. The cooling plate 131 holds the shower plate 132. Also, the cooling plate 131 has a function of cooling the held shower plate 132. Further, a gas supply port 13a, a gas supply passage 13b, and a gas diffusion chamber 13c are formed in the cooling plate 131. The cooling plate 131 is formed of, for example, Al, SiC, or a metal matrix composite (MMC).

[0023] A plurality of gas inlets 13d are formed in the shower plate 132. When the shower plate 132 is held by the cooling plate 131, the plurality of gas inlets 13d communicate with the gas diffusion chamber 13c. The shower plate 132 is formed of, for example, Si, SiC, SiO2, Al, or the like.

[0024] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0025] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the RF power supply 31 can function as at least a part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0026] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0027] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0028] Further, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0029] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Accordingly, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one period. Note that the first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0030] The exhaust system 40 can be connected to, for example, a gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0031] The control unit 2 processes computer-executable instructions that cause the substrate processing apparatus 1 to execute various processes described in the present disclosure. The control unit 2 may be configured to control each element of the substrate processing apparatus 1 so as to execute the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the substrate processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the substrate processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0032] Next, the shower head 13 will be described with reference to FIGS. 2 to 3. FIG. 2 is an example of a cross-sectional view of the shower head 13 according to the first embodiment. FIG. 3 is an example of a bottom view of the cooling plate 131 according to the first embodiment as viewed from below. In FIG. 3, the refrigerant flow path 200 is illustrated by a dashed line and is marked with a dot pattern to clearly show the refrigerant flow path 200.

[0033] On the upper surface 131a of the cooling plate 131, gas supply ports 13a (13a1 to 13a3) are provided. Further, in the cooling plate 131, gas supply channels 13b (13b1 to 13b3), which are channels penetrating the cooling plate 131 in the plate thickness direction, are provided. The gas supply channels 13b (13b1 to 13b3) are formed so as to communicate with the gas supply ports 13a (13a1 to 13a3) and the concave grooves 131c (131c1 to 131c3), respectively. On the lower surface 131b of the cooling plate 131, the concave grooves 131c (131c1 to 131c3) are formed. The concave grooves 131c are formed, for example, in an annular shape concentric with the cooling plate 131. In the example shown in FIG. 3, the concave groove 131c1 is formed as an annular concave groove. The concave groove 131c2 is formed as an annular concave groove disposed on the outer peripheral side of the concave groove 131c1. The concave groove 131c3 is formed as an annular concave groove disposed on the outer peripheral side of the concave groove 131c2.

[0034] Note that although the shape of the concave grooves 131c (131c1 to 131c3) has been described as being formed in an annular shape, it is not limited thereto. For example, the concave groove 131c1 may be formed as a circular concave groove. And the concave groove 131c2 may be formed as an annular concave groove disposed on the outer peripheral side of the concave groove 131c1, and the concave groove 131c3 may be formed as an annular concave groove disposed on the outer peripheral side of the concave groove 131c2.

[0035] A gas diffusion chamber 13c1 is formed by the concave groove 131c1 formed on the lower surface 131b of the cooling plate 131 and the upper surface of the shower plate 132. Similarly, a gas diffusion chamber 13c2 is formed by the concave groove 131c2 formed on the lower surface 131b of the cooling plate 131 and the upper surface of the shower plate 132. Further, a gas diffusion chamber 13c3 is formed by the concave groove 131c3 formed on the lower surface 131b of the cooling plate 131 and the upper surface of the shower plate 132.

[0036] With such a configuration, the processing gas supplied from the gas supply port 13a is supplied to the gas diffusion chamber 13c via the gas supply flow path 13b. The processing gas diffused in the gas diffusion chamber 13c is discharged into the plasma processing space 10s (see FIG. 1) via the gas introduction port 13d. With such a configuration, the supply pressure of the processing gas in the gas diffusion chamber 13c can be reduced. Thereby, abnormal discharge occurring between the cooling plate 131 and the shower plate 132 can be suppressed.

[0037] Further, the lower surface 131b of the cooling plate 131 has a heat transfer surface 131d (131d1 to 131d4) that transfers heat between the cooling plate 131 and the shower plate 132 by coming into contact with the shower plate 132. In the example shown in FIG. 3, the heat transfer surface 131d1 is formed in a circular shape and is formed inside the concave groove 131c1. The heat transfer surface 131d2 is formed in an annular shape and is formed outside the concave groove 131c1 and inside the concave groove 131c2. The heat transfer surface 131d3 is formed in an annular shape and is formed outside the concave groove 131c2 and inside the concave groove 131c3. The heat transfer surface 131d4 is formed in an annular shape and is formed outside the concave groove 131c3.

[0038] With such a configuration, the cooling plate 131 contacts the shower plate 132 at the heat transfer surface 131d (131d1 to 131d4) and does not contact the shower plate 132 in the region where the concave grooves 131c (131c1 to 131c3) are formed.

[0039] Note that the shape of the heat transfer surface 131d (131d1 to 131d4) is not limited to this. For example, when the concave groove 131c1 is formed as a circular concave groove, the heat transfer surface 131d1 formed in a circular shape may not be provided.

[0040] In addition, a bolt hole (not shown) for inserting a bolt (not shown) for fastening the cooling plate 131 and the shower plate 132 may be formed in the region where the heat transfer surface 131d (131d1 to 131d4) is formed. Thereby, the shower plate 132 is detachably attached to the cooling plate 131. Note that the method of attaching the shower plate 132 to the cooling plate 131 is not limited to this. For example, a configuration in which the cooling plate 131 and the shower plate 132 are clamped by a clamp member (not shown) may be adopted at the outer peripheral portion of the shower plate 132.

[0041] In other words, on the lower surface 131b of the cooling plate 131, the heat transfer surfaces 131d (131d1 to 131d4) and the concave grooves 131c (131c1 to 131c3) are alternately and repeatedly formed from the center of the cooling plate 131 toward the outer periphery of the cooling plate 131.

[0042] Further, a refrigerant flow path 200 through which a refrigerant such as brine flows is formed in the cooling plate 131. A refrigerant supply path 201 is formed at one end of the refrigerant flow path 200, and a refrigerant discharge path 202 is formed at the other end of the refrigerant flow path 200. The refrigerant supply path 201 is formed in the height direction of the cooling plate 131 from the upper surface 131a of the cooling plate 131 and is a flow path connected to one end of the refrigerant flow path 200. The refrigerant discharge path 202 is formed in the height direction of the cooling plate 131 from the upper surface 131a of the cooling plate 131 and is a flow path connected to the other end of the refrigerant flow path 200. The refrigerant supply path 201 and the refrigerant discharge path 202 are connected to a refrigerant supply device (not shown) such as a chiller. Thereby, the refrigerant supplied from the refrigerant supply device to the refrigerant supply path 201 flows through the refrigerant flow path 200 in the cooling plate 131, extracts heat from the cooling plate 131, and is discharged from the refrigerant discharge path 202.

[0043] Here, as shown in FIG. 2, in the height direction, it is preferable that the refrigerant flow path 200 is formed in a range where the height H1 from the heat transfer surface 131d of the cooling plate 131 to the lower surface of the refrigerant flow path 200 is 3 mm or more and 20 mm or less. Thereby, the refrigerant flow path 200 can be brought closer to the heat transfer surface 131d.

[0044] Also, as shown in FIG. 3, in a plan view, the refrigerant flow path 200 is disposed in the vicinity of the heat transfer surface 131d of the cooling plate 131. Specifically, in a plan view, at least a part of the refrigerant flow path 200 is disposed on the heat transfer surface 131d of the cooling plate 131.

[0045] Furthermore, specifically, as shown in FIG. 3, the refrigerant flow path 200 has partial refrigerant flow paths 211 to 220.

[0046] The refrigerant flow path 200 has a partial refrigerant flow path 211 disposed along the boundary between the outer periphery of the heat transfer surface 131d1 and the inner periphery of the concave groove 131c1 (gas diffusion chamber 13c1) in a plan view. The partial refrigerant flow path 211 is formed in an arc shape in a plan view, and at least a part thereof is formed on the heat transfer surface 131d1.

[0047] The refrigerant flow path 200 has a partial refrigerant flow path 212 disposed along the boundary between the outer periphery of the concave groove 131c1 (gas diffusion chamber 13c1) and the inner periphery of the heat transfer surface 131d2 in a plan view. The partial refrigerant flow path 212 is formed in an arc shape in a plan view, and at least a part thereof is formed on the heat transfer surface 131d2.

[0048] The refrigerant flow path 200 has a partial refrigerant flow path 213 disposed along the boundary between the outer periphery of the heat transfer surface 131d2 and the inner periphery of the concave groove 131c2 (gas diffusion chamber 13c2) in a plan view. The partial refrigerant flow path 213 is formed in an arc shape in a plan view, and at least a part thereof is formed on the heat transfer surface 131d2.

[0049] In a plan view, the refrigerant flow path 200 has a partial refrigerant flow path 214 disposed along the boundary between the outer periphery of the concave groove 131c2 (gas diffusion chamber 13c2) and the inner periphery of the heat transfer surface 131d3. The partial refrigerant flow path 214 is formed in an arc shape in a plan view, and at least a part thereof is formed on the heat transfer surface 131d3.

[0050] In a plan view, the refrigerant flow path 200 has a partial refrigerant flow path 215 disposed along the boundary between the outer periphery of the heat transfer surface 131d3 and the inner periphery of the concave groove 131c3 (gas diffusion chamber 13c3). The partial refrigerant flow path 215 is formed in an arc shape in a plan view, and at least a part thereof is formed on the heat transfer surface 131d3.

[0051] The refrigerant flow path 200 has a partial refrigerant flow path 216 connecting the partial refrigerant flow path 215 and the partial refrigerant flow path 213. The refrigerant flow path 200 also has a partial refrigerant flow path 217 connecting the partial refrigerant flow path 213 and the partial refrigerant flow path 211. The refrigerant flow path 200 also has a partial refrigerant flow path 218 connecting the partial refrigerant flow path 211 and the partial refrigerant flow path 212. The refrigerant flow path 200 also has a partial refrigerant flow path 219 connecting the partial refrigerant flow path 212 and the partial refrigerant flow path 214. The refrigerant flow path 200 also has a partial refrigerant flow path 220 connecting the partial refrigerant flow path 214 and the refrigerant discharge path 202.

[0052] As described above, the refrigerant supplied from the refrigerant supply path 201 flows in the order of the arc-shaped partial refrigerant flow path 215, the partial refrigerant flow path 216, the arc-shaped partial refrigerant flow path 213, the partial refrigerant flow path 217, the arc-shaped partial refrigerant flow path 211, the partial refrigerant flow path 218, the arc-shaped partial refrigerant flow path 212, the partial refrigerant flow path 219, the arc-shaped partial refrigerant flow path 214, and the partial refrigerant flow path 220, and is discharged from the refrigerant discharge path 202.

[0053] In other words, the refrigerant flow path 200 has a partial refrigerant flow path 211 disposed in the vicinity so as to cool the circular heat transfer surface 131d1. Further, the refrigerant flow path 200 has partial refrigerant flow paths 212 and 213 disposed in the vicinity so as to cool the annular heat transfer surface 131d2. Further, the refrigerant flow path 200 has partial refrigerant flow paths 214 and 215 disposed in the vicinity so as to cool the annular heat transfer surface 131d3.

[0054] Here, the heat input from the plasma formed in the plasma processing space 10s (see FIG. 1) into the shower plate 132 is input into the cooling plate 131. For this reason, the temperature on the lower surface 131b side of the cooling plate 131 becomes higher than that on the upper surface 131a side. As a result, the thermal expansion on the lower surface 131b side of the cooling plate 131 becomes larger than that on the upper surface 131a side, and the cooling plate 131 is deformed (warped). Due to this deformation of the cooling plate 131, there is a risk of damage such as cracking of the shower plate 132 held by the cooling plate 131.

[0055] On the other hand, as shown in FIGS. 2 and 3, the cooling plate 131 contacts the shower plate 132 at the heat transfer surface 131d (131d1 to 131d4). That is, the cooling plate 131 is not in contact with the shower plate 132 in the region where the concave grooves 131c (131c1 to 131c3) are formed. By restricting the contact between the cooling plate 131 and the shower plate 132 to the heat transfer surface 131d in this way, it is possible to reduce the deformation (warpage) of the cooling plate 131 compared to a configuration in which the cooling plate 131 and the shower plate 132 are in contact over the entire surface, and the load acting on the cooling plate 131 can be reduced. As a result, damage such as cracking of the shower plate 132 held by the cooling plate 131 can be prevented or reduced.

[0056] Further, the refrigerant flow path 200 is disposed near the heat transfer surface 131d. Thereby, the heat introduced into the cooling plate 131 through the heat transfer surface 131d is removed by the refrigerant flowing through the refrigerant flow path 200. Thereby, the temperature difference between the upper surface 131a side and the lower surface 131b side of the cooling plate 131 can be reduced, and deformation (warpage) of the cooling plate 131 can be suppressed. Further, breakage such as cracking of the shower plate 132 held by the cooling plate 131 can be prevented or reduced.

[0057] Next, another shower head 13 will be described with reference to FIGS. 4 and 5. FIG. 4 is an example of a cross-sectional view of the shower head 13 according to the second embodiment. FIG. 5 is an example of a bottom view of the cooling plate 131 according to the second embodiment as viewed from below.

[0058] As shown in FIGS. 4 and 5, the refrigerant flow path 200 may be disposed directly above the heat transfer surface 131d. Specifically, the bottom surface of the refrigerant flow path 200 disposed directly above the heat transfer surface 131d is disposed at a position lower than the top surface of the concave groove 131c (gas diffusion chamber 13c). In other words, it is preferable that the height H1 from the heat transfer surface 131d of the cooling plate 131 to the lower surface of the refrigerant flow path 200 is formed lower than the depth of the concave groove 131c (the height from the heat transfer surface 131d of the cooling plate 131 to the top surface of the concave groove 131c). By disposing the refrigerant flow path 200 directly above the heat transfer surface 131d, the cooling efficiency can be improved.

[0059] Next, still another shower head 13 will be described with reference to FIG. 6. FIG. 6 is an example of a cross-sectional view of the shower head 13 according to the third embodiment.

[0060] As shown in FIG. 6, the cross-sectional shape of the refrigerant flow path 200 may be formed in a substantially L shape in a cross-sectional view so as to surround the gas diffusion chamber 13c. Thereby, the flow path cross-sectional area of the refrigerant flow path 200 can be increased, the flow rate of the refrigerant can be increased, and the cooling efficiency can be improved.

[0061] Although the embodiments of the plasma processing system and the like have been described above, the present disclosure is not limited to the above embodiments and the like, and various modifications and improvements can be made within the scope of the gist of the present disclosure described in the claims.

Explanation of Signs

[0062] W substrate 1 Substrate processing apparatus 2 Control unit 10 Plasma processing chamber 10s Plasma processing space 11 Substrate support unit 13 Shower head 13a Gas supply port 13b Gas supply flow path 13c Gas diffusion chamber 13d Gas inlet (gas discharge port) 20 Gas supply unit 30 Power supply 40 Exhaust system 51~53 Gas introduction part 131 Cooling plate 132 Shower plate 131a Upper surface 131b Lower surface 131c Concave groove 131d Heat transfer surface 200 Refrigerant flow path 201 Refrigerant supply path 202 Refrigerant discharge path 211~220 Partial refrigerant flow paths

Claims

1. A plasma processing chamber, a substrate support portion provided in the plasma processing chamber for supporting a substrate, a shower head facing the substrate support portion, wherein the shower head includes a shower plate in which a gas discharge port for discharging gas is formed, a cooling plate that holds the shower plate and in which a refrigerant flow path and a gas supply flow path for supplying refrigerant are formed, a plurality of gas diffusion chambers formed between the shower plate and the cooling plate and communicating with the gas discharge port and the gas supply flow path respectively, at least a part of the refrigerant flow path is arranged on the heat transfer surface between the shower plate and the cooling plate in a plan view, the bottom surface of the refrigerant flow path is arranged at a position lower than the top surface of the gas diffusion chamber, a substrate processing apparatus.

2. the gas diffusion chamber is formed by a concave groove formed on the lower surface of the cooling plate and the upper surface of the shower plate, the gas discharge port of the shower plate communicates with the gas diffusion chamber, the substrate processing apparatus according to claim 1.

3. the height from the heat transfer surface of the cooling plate in contact with the shower plate to the lower surface of the refrigerant flow path is 3 mm or more and 20 mm or less, the substrate processing apparatus according to claim 1 or claim 2.

4. the refrigerant flow path includes a partial refrigerant flow path arranged along the boundary between the gas diffusion chamber and the heat transfer surface in a plan view, the substrate processing apparatus according to any one of claims 1 to 3.

5. the refrigerant flow path is arranged directly above the heat transfer surface in a plan view, The substrate processing apparatus according to any one of claims 1 to 3.

6. The refrigerant flow path is arranged so as to surround the gas diffusion chamber. The substrate processing apparatus according to any one of claims 1 to 3.

7. The shower plate is formed of any one of Si, SiC, SiO ２ , and Al. The cooling plate is formed of any one of Al, SiC, or a metal matrix composite material. The substrate processing apparatus according to any one of claims 1 to 6.

Images