Substrate processing apparatus

Abstract

To convey an edge ring.SOLUTION: A placement table on which a substrate to be subjected to a predetermined process is placed includes an electrostatic chuck that electrostatically adsorbs the substrate, a first edge ring, which can be conveyed and disposed around the substrate, a second edge ring that is fixed around the first edge ring, a lifter pin that lifts the first edge ring up and down, a first electrode for electrostatic adsorption of the first edge ring, which is disposed at a position facing the first edge ring on the electrostatic chuck, and a second electrode for electrostatic adsorption of the second edge ring, which is disposed at a position facing the second edge ring on the electrostatic chuck.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a mounting table, a substrate processing apparatus, an edge ring, and a method for transporting the edge ring.

Background Art

[0002] For example, the mounting table of Patent Document 1 includes an electrostatic chuck and an edge ring.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of transporting an edge ring.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, a processing container, a mounting table body disposed in the processing container, an electrostatic chuck disposed on an upper surface of the mounting table body and including a substrate mounting portion and a ring mounting portion for disposing a ring surrounding the substrate, and disposed on the ring mounting portion the a first ring, and around the first ring arranged in a second ring disposed and, are provided, and an outer diameter of the second ring is larger than a width of a substrate transfer port of the processing container.

Effects of the Invention

[0006] According to one aspect, an edge ring can be transported.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In the present specification and the drawings, substantially the same configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0009] [Overall Configuration of Substrate Processing Apparatus] FIG. 1 shows an example of the configuration of a substrate processing apparatus 1 according to an embodiment. This substrate processing apparatus 1 is configured as a capacitively coupled plasma processing apparatus and has, for example, a cylindrical processing container 10 made of metal such as aluminum or stainless steel. The processing container 10 is grounded.

[0010] Inside the processing container 10, a disk-shaped mounting table 12 for placing a wafer W as an example of a substrate is horizontally arranged as a lower electrode. This mounting table 12 has, for example, a main body or base 12a made of aluminum and a conductive RF plate 12b fixed to the bottom surface of this base 12a, and is supported by an insulating cylindrical support portion 14 extending vertically upward from the bottom of the processing container 10. A conductive cylindrical support portion 16 extending vertically upward from the bottom of the processing container 10 is formed along the outer periphery of this cylindrical support portion 14. An annular exhaust passage 18 is formed between the cylindrical support portion 16 and the inner wall of the processing container 10, and an exhaust port 20 is provided at the bottom of this exhaust passage 18. An exhaust device 24 is connected to this exhaust port 20 via an exhaust pipe 22. The exhaust device 24 has a vacuum pump such as a turbo molecular pump, and can reduce the pressure of the processing space inside the processing container 10 to a desired degree of vacuum. A transfer port 25 for loading and unloading the wafer W and the like and a gate valve 26 for opening and closing the transfer port 25 are attached to the side wall of the processing container 10.

[0011] A first high-frequency power supply 30 and a second high-frequency power supply 28 are electrically connected to the mounting table 12 via a matching unit 32 and a power supply rod 34. The first high-frequency power supply 30 outputs high-frequency power of a predetermined frequency, for example, 40 MHz, which mainly contributes to the generation of plasma. The second high-frequency power supply 28 outputs high-frequency power of a predetermined frequency, for example, 2 MHz, which mainly contributes to the drawing in of ions to the wafer W on the mounting table 12. The matching unit 32 houses a first matcher and a second matcher. The first matcher matches between the impedance on the first high-frequency power supply 30 side and the impedance on the load (mainly the electrode, plasma, processing container) side. The second matcher matches between the impedance on the second high-frequency power supply 28 side and the impedance on the load (mainly the electrode, plasma, processing container) side.

[0012] The mounting table 12 has a diameter larger than that of the wafer W. The upper surface of the mounting table 12 is divided into two parts: a central region having substantially the same shape (circular) and substantially the same size as the wafer W, that is, a wafer mounting portion, and an annular peripheral portion extending outside the wafer mounting portion. The wafer W to be processed is mounted on the wafer mounting portion. Also, an edge ring 36 having an inner diameter slightly larger than the diameter of the wafer W is attached around the wafer W and on the annular peripheral portion. The edge ring 36 is also called a focus ring. The edge ring 36 is made of a material such as Si, SiC, C, SiO2, etc., according to the material to be etched of the wafer W. The edge ring 36 has a first edge ring which is an inner peripheral side edge ring provided annularly around the wafer W, and a second edge ring which is an outer peripheral side edge ring provided annularly around the first edge ring.

[0013] The wafer mounting portion and the annular peripheral portion on the upper surface of the mounting table 12 are the mounting surfaces of the central portion and the outer peripheral portion of an electrostatic chuck 38 for electrostatically adsorbing the wafer. The electrostatic chuck 38 has a sheet-like or mesh-like electrode 38a in a film-like or plate-like dielectric 38b. The electrostatic chuck 38 is integrally formed or integrally fixed on the base 12a of the mounting table 12. A DC power supply 40 arranged outside the processing container 10 is electrically connected to the electrode 38a via wiring and a switch 42, and the wafer W is electrostatically adsorbed and held on the electrostatic chuck 38 by the Coulomb force due to the DC voltage applied from the DC power supply 40.

[0014] The upper surface of the outer peripheral portion of the electrostatic chuck 38 is in direct contact with the lower surface of the edge ring 36. A first electrode 44 and a second electrode 45 made of a sheet-like or mesh-like conductor are provided in the annular peripheral portion. The first electrode 44 is arranged at a position facing the first edge ring 361 of the electrostatic chuck 38, and the second electrode 45 is arranged at a position facing the second edge ring 362 of the electrostatic chuck 38.

[0015] The first electrode 44 and the second electrode 45 are electrically connected to a DC power source 40. The DC power source 40 supplies a DC voltage to the first electrode 44 and the second electrode 45. The supply and stop of the DC voltage to the first electrode 44 and the second electrode 45 can be performed independently and separately for each electrode.

[0016] Thereby, while a DC voltage is applied to the first electrode 44, the first edge ring 361 can be adsorbed and held on the annular peripheral portion of the electrostatic chuck 38 by Coulomb force. Also, while a DC voltage is applied to the second electrode 45, the second edge ring 362 can be adsorbed and held on the annular peripheral portion of the electrostatic chuck 38 by Coulomb force.

[0017] Inside the mounting table 12, for example, an annular refrigerant chamber 46 extending in the circumferential direction is provided. A refrigerant at a predetermined temperature, for example, cooling water, is circulated and supplied to this refrigerant chamber 46 via pipes 48 and 50 from a chiller unit (not shown), and the temperature of the wafer W and the edge ring 36 on the electrostatic chuck 38 can be controlled by the temperature of this refrigerant.

[0018] A through hole 54 for supplying a heat medium between the wafer W and the mounting surface at the center of the electrostatic chuck 38 is connected to a gas supply pipe 52. In such a configuration, a heat transfer gas such as He gas from a heat transfer gas supply unit (not shown) passes through the gas supply pipe 52 and is supplied between the electrostatic chuck 38 and the wafer W through the passage of the through hole 54 inside the mounting table 12. A heat transfer gas such as He gas is an example of a heat medium.

[0019] On the ceiling of the processing container 10, a shower head 56 at a ground potential is provided facing the mounting table 12 in parallel. The shower head 56 has an electrode plate 58 facing the mounting table 12 and an electrode support 60 that detachably supports the electrode plate 58 from behind (above), and also functions as an upper electrode. The electrode plate 58 is made of, for example, Si or SiC, and the electrode support 60 is made of, for example, anodized aluminum.

[0020] Inside the electrode support 60, a gas chamber 62 is provided, and a large number of gas discharge holes 61 penetrating from the gas chamber 62 toward the mounting table 12 side are formed in the electrode support 60 and the electrode plate 58. With such a configuration, the space between the electrode plate 58 and the mounting table 12 becomes a plasma generation or processing space. A processing gas supply unit 64 is connected to a gas inlet 62a provided at the upper part of the gas chamber 62 via a gas supply pipe 66.

[0021] The operations of each part inside the plasma processing apparatus and the operation of the entire apparatus are controlled by a control unit 100 composed of, for example, a microcomputer. Examples of each part inside the plasma processing apparatus include an exhaust device 24, a first high-frequency power source 30, a second high-frequency power source 28, a switch 42 of a DC power source 40, a chiller unit (not shown), and a processing gas supply unit 64, etc.

[0022] The control unit 100 has a ROM (Read Only Memory) and a RAM (Random Access Memory) not shown. The microcomputer controls processes such as etching according to the procedure set in the recipe stored in the RAM or the like.

[0023] In the substrate processing apparatus 1 having such a configuration, to perform a predetermined process such as etching on the wafer W, first, the gate valve 26 is opened, and the wafer W to be processed is held on a transfer arm (not shown) and then introduced into the processing container 10 from the transfer port 25. The wafer W is held by a pusher pin (not shown) above the wafer mounting portion of the electrostatic chuck 38, and the pusher pin descends to place the wafer W on the wafer mounting portion of the electrostatic chuck 38. The gate valve 26 is closed after the transfer arm withdraws. The pressure inside the processing container 10 is reduced to a set value by the exhaust device 24.

[0024] Also, by applying a DC voltage from the DC power source 40 to the electrode 38a of the electrostatic chuck 38, the first electrode 44, and the second electrode 45, the wafer W, the first edge ring 361, and the second edge ring 362 are electrostatically adsorbed onto the electrostatic chuck 38.

[0025] The processing gas output from the processing gas supply unit 64 is introduced into the processing chamber 10 in a shower-like manner from the shower head 56. Further, the first high-frequency power supply 30 and the second high-frequency power supply 28 are turned on to output respective high-frequency powers, which are applied to the mounting table 12 via the feed rod 34. The introduced processing gas is turned into plasma by the high-frequency power, and a predetermined process such as etching is performed on the main surface of the wafer W by radicals and ions generated by this plasma. After the plasma processing, the wafer W is held on the transfer arm and carried out of the processing chamber 10 from the transfer port 25. By repeating this process, the wafer W is continuously processed.

[0026] [Edge ring and its surrounding configuration] Next, the edge ring 36 and its surrounding configuration will be described with reference to FIG. 2. FIG. 2 shows an enlarged view of the structure around the edge ring 36 on the mounting surface of the outer peripheral portion of the electrostatic chuck 38. The outer peripheral portion of the electrostatic chuck 38 around the wafer W is at a position one step lower, and the annular edge ring 36 divided into two parts, the first edge ring 361 and the second edge ring 362, is arranged. The first edge ring 361 is an inner edge ring that can be transported and is arranged around the wafer W. The second edge ring 362 is an outer edge ring fixed around the first edge ring 361. The upper surface of the wafer W placed on the electrostatic chuck 38, the upper surface of the first edge ring 361, and the upper surface of the second edge ring 362 are arranged to be substantially flush.

[0027] The first edge ring 361 can be separated upward from the mounting table 12 by a lifter pin 75 that raises and lowers the first edge ring 361, and its height position can be variably adjusted. A through hole 72 is formed in the mounting table 12 in the vertical direction directly below the first edge ring 361. The lifter pin 75 is slidably passed through the through hole 72. The through hole 72 is an example of a first through hole provided with the lifter pin 75 inside.

[0028] The tip of the lifter pin 75 abuts against the lower surface of the first edge ring 361. The base end portion of the lifter pin 75 is supported by an actuator 76 disposed outside the processing container 10. The actuator 76 can move the lifter pin 75 up and down to arbitrarily adjust the height position of the first edge ring 361. A seal member 78 such as an O-ring is provided in the through hole 72. Note that the through hole 72, the lifter pin 75, and the actuator 76 are preferably provided at a plurality of locations (for example, three locations) at predetermined intervals in the circumferential direction.

[0029] When transporting the first edge ring 361, the actuator 76 moves the lifter pin 75 up and down to arbitrarily adjust the height position of the first edge ring 361. The gate valve 26 is opened and the transfer arm is inserted into the processing container 10 from the transfer port 25. As the lifter pin 75 descends, the first edge ring 361 is placed on the transfer arm.

[0030] FIG. 3 is a schematic plan view of the first edge ring 361 and the second edge ring 362. The outer diameter (outer peripheral diameter φ) of the first edge ring 361 is formed smaller than the lateral width D of the substrate transfer port 25 formed in the processing container 10. Thereby, the first edge ring 361 can be transferred from the transfer port 25 to the inside and outside of the processing container 10 while being held by the transfer arm. As shown in FIG. 2, the first edge ring 361 to be replaced is transferred from the lifter pin 75 to the transfer arm by moving the lifter pin 75 up and down by the actuator 76, and is carried out from the transfer port 25 to the outside of the processing container 10. Then, a new first edge ring 361 is held by the transfer arm and carried into the processing container 10 from the transfer port 25, and is disposed on the electrostatic chuck 38 at the annular peripheral portion on the inner peripheral side of the second edge ring 362.

[0031] The diameter of the wafer W is 300 mm. In order to carry the wafer W in and out from the transfer port 25, the lateral width D of the transfer port 25 opens slightly larger than 300 mm. In order to carry the edge ring 36 larger than the wafer W in and out from the transfer port 25, it is necessary to make the outer diameter of the edge ring 36 smaller than the lateral width D of the transfer port 25.

[0032] On the other hand, the outer diameter of the edge ring 36 is one of the process conditions when a predetermined process is performed on the wafer W, and a size of 320 mm to 370 mm or more is required. For this reason, the edge ring 36 cannot be carried through the transfer port 25 without being divided.

[0033] In consideration of the above, the edge ring 36 according to the present embodiment is divided into a first edge ring 361 on the inner conveyed side and a second edge ring 362 on the outer non-conveyed side. Thereby, the first edge ring 361 has a diameter φ smaller than the lateral width D of the transfer port 25 and can be conveyed from the transfer port 25. On the other hand, the second edge ring 362 has a diameter larger than the lateral width D of the transfer port 25 and is fixed to the electrostatic chuck 38 without being the target of automatic conveyance from the transfer port 25. Thereby, the first edge ring 361 can be carried in and out from the transfer port 25 in the same manner as the wafer W without opening the lid of the processing container 10.

[0034] Also, in such a configuration, the DC voltages applied to the first electrode 44 and the second electrode 45 can be controlled separately. For example, while stopping the supply of the DC voltage to the first electrode 44 when the first edge ring 361 is conveyed, the DC voltage to the second electrode 45 of the second edge ring 362 on the non-conveyed side can be continuously supplied. For this reason, when the first edge ring 361 is conveyed, the adsorption of the first edge ring 361 on the conveyed side can be released while maintaining the electrostatic adsorption of the second edge ring 362 on the non-conveyed side.

[0035] [Electrode pattern] As described above, the first electrode 44 and the second electrode 45 are each independently controlled by the control unit 100. Thereby, when transporting the first edge ring 361, the first edge ring 361 can be transported while the position of the second edge ring 362 remains fixed without shifting.

[0036] When the first electrode 44 and the second electrode 45 are single-pole, when a positive charge is supplied to the electrodes of the electrostatic chuck 38, it is necessary to collect negative charges on the first edge ring 361 and the second edge ring 362 to generate a Coulomb force. For this reason, a path connected to the ground is required for the first edge ring 361 and the second edge ring 362. For example, if plasma is being generated in the processing space, a path to the ground (the grounded processing container 10) can be created by the plasma. Therefore, even when the first electrode 44 and the second electrode 45 are single-pole, it becomes possible to electrostatically adsorb the first edge ring 361 and the second edge ring 362.

[0037] However, when transporting the first edge ring 361, no plasma is being generated. Then, there is no path connecting the first edge ring 361 and the second edge ring 362 to the ground, and the first edge ring 361 and the second edge ring 362 cannot be electrostatically adsorbed.

[0038] Therefore, the first electrode 44 and the second electrode 45 according to the present embodiment are each divided into a plurality of patterns (hereinafter also referred to as "electrode patterns"), and different voltages are applied to the electrode patterns divided into a plurality for each of the first electrode 44 and the second electrode 45. In this way, in each of the first electrode 44 and the second electrode 45, by providing a potential difference between the respective divided patterns, a bipolar electrode is formed so that the first edge ring 361 and the second edge ring 362 can be independently electrostatically adsorbed.

[0039] The upper part of FIG. 4 shows an example of the electrode patterns on the upper surfaces of the first electrode 44 and the second electrode 45. The lower part of FIG. 4 shows an example of the cross-sections of the first electrode 44 and the second electrode 45. FIG. 4(a) shows a bipolar electrode pattern in which the first electrode 44 and the second electrode 45 are divided in the circumferential direction. FIG. 4(b) shows a bipolar electrode pattern in which the first electrode 44 and the second electrode 45 are divided into concentric circles.

[0040] In the electrode pattern of FIG. 4(a), the first electrode 44 is divided into six parts in the circumferential direction, and different DC voltages are applied to the partial electrodes 44A and 44B arranged alternately in groups of three to create a potential difference. Also, the second electrode 45 is divided into six parts in the circumferential direction, and different DC voltages are applied to the partial electrodes 45A and 45B arranged alternately in groups of three to create a potential difference. In the electrode pattern of FIG. 4(a), each electrode is divided into six parts in the circumferential direction, but the number of divisions is not limited to this.

[0041] In the electrode pattern of FIG. 4(b), different DC voltages are applied to the partial electrodes 44A and 44B obtained by dividing the first electrode 44 into two concentric circles to create a potential difference. Also, different DC voltages are applied to the partial electrodes 45A and 45B obtained by dividing the second electrode 45 into two concentric circles to create a potential difference. For both electrode patterns of FIGS. 4(a) and (b), different DC voltages with opposite polarities may be applied to the partial electrode 44A and the partial electrode 44B, or different DC voltages with the same polarity that create a potential difference may be applied. Also, for the partial electrode 45A and the partial electrode 45B, different DC voltages with opposite polarities may be applied, or different DC voltages with the same polarity and different magnitudes that create a potential difference may be applied.

[0042] Also, for both electrode patterns in FIGS. 4(a) and (b), the areas of the partial electrodes 44A and 44B are formed to be substantially the same, and the areas of the partial electrodes 45A and 45B are formed to be substantially the same. Thereby, an electrostatic adsorption force with the electrostatic chuck 38 can be generated in the bipolar electrode pattern. Thereby, by polarizing inside each of the first electrode 44 and the second electrode 45, an electrostatic adsorption force can be independently generated between the electrostatic chuck 38 and the first edge ring 361 and between the electrostatic chuck 38 and the second edge ring 362.

[0043] In addition, in the edge ring 36 according to the present embodiment, an example in which the first edge ring 361 and the second edge ring 362 are divided into two has been described, but the present invention is not limited to this, and the edge ring 36 may be divided into three or four or more parts. In this case, one or more divided edge rings having a diameter smaller than the lateral width D of the transfer port 25 are the objects of transfer, and one or more divided edge rings having a diameter larger than the lateral width D of the transfer port 25 are fixed to the electrostatic chuck 38.

[0044] In addition, when the edge ring (the second edge ring 362 in the present embodiment) on the side fixed to the electrostatic chuck 38 is worn out, the edge ring is replaced manually by opening the lid of the processing container 10.

[0045] However, since the edge ring on the side to be conveyed (the first edge ring 361 in this embodiment) is provided around the wafer W, it is consumed more by plasma processing than the edge ring on the side not to be conveyed. Further, when the consumption is about the same, the edge ring on the side to be conveyed, which is provided around the wafer W, has a greater impact on the process characteristics of the edge portion of the wafer W. Therefore, the number of replacements of the edge ring on the side to be conveyed, which has a great impact on the process characteristics, is larger than the number of replacements of the edge ring on the side not to be conveyed, which has a small impact on the process characteristics. Thus, in this embodiment, the edge ring on the side to be conveyed is automatically conveyed from the transfer port 25. Thereby, the process can be improved, and the time required for replacing and maintaining the edge ring can be shortened to improve productivity.

[0046] [Modification Example Using Heat Transfer Gas Supply Unit] Next, a modification example using a heat transfer gas supply unit will be described with reference to FIG. 5. FIG. 5 is a longitudinal sectional view showing the configuration around the edge ring 36 according to a modification example of an embodiment. In this modification example, there are a first through hole 112a for supplying a heat medium between the first edge ring 361 and the mounting surface of the annular peripheral portion of the electrostatic chuck 38, and a second through hole 112b for supplying a heat medium between the second edge ring 362 and the mounting surface of the electrostatic chuck 38.

[0047] Thereby, a heat transfer gas such as He gas from a heat transfer gas supply unit (not shown) passes through the gas supply pipe 52 and is supplied between the electrostatic chuck 38, the wafer W, and the edge ring 36 through the passages of the first through hole 112a and the second through hole 112b inside the mounting table 12. The heat transfer gas such as He gas is an example of a heat medium.

[0048] In this modification example, the first through hole 112a through which the heat transfer gas passes is an example of the first through hole provided with the lifter pin 75 inside. Thereby, while raising and lowering the lifter pin 75, the heat transfer gas can be supplied between the first edge ring 361 and the electrostatic chuck 38 through the first through hole 112a.

[0049] Although not shown in the drawings, the supply and supply stop of the heat transfer gas to the first through hole 112a and the supply and supply stop of the heat transfer gas to the second through hole 112b can be controlled separately. With such a configuration, the heat transfer coefficient of the edge ring 36 can be controlled by supplying the heat transfer gas between the mounting surface of the electrostatic chuck 38 and the back surface of the edge ring 36 through the first through hole 112a and the second through hole 112b. Further, the first edge ring 361 can be transported while enhancing the accuracy of temperature control of the edge ring.

[0050] [Exchange determination process] Next, in the configuration of the edge ring 36 shown as an example in FIG. 5, an embodiment of an exchange determination process for determining the exchange of the first edge ring 361 will be described with reference to FIG. 6. FIG. 6 is a flowchart showing an example of the exchange determination process according to an embodiment. This process is executed by the control unit 100.

[0051] When this process is started, in step S10, an unprocessed wafer is carried into the processing container 10 and placed on the mounting table 12. Next, in step S12, a predetermined process such as etching or film formation is performed on the wafer. Next, in step S14, the processed wafer on which the predetermined process has been performed is carried out of the processing container 10.

[0052] Next, in step S16, it is determined whether the usage time (wafer processing time) of the substrate processing apparatus 1 is equal to or greater than a predetermined threshold value. If the usage time is equal to or greater than the threshold value, in step S18, after performing the replacement process of the first edge ring 361, the process proceeds to step S19. If the usage time is less than the threshold value, the replacement process of the first edge ring 361 is not performed, and the process directly proceeds to step S19.

[0053] Next, in step S19, it is determined whether there is a next wafer to be processed. If it is determined that there is a next wafer, the process returns to step S10 and the processes after step S10 are performed. If it is determined that there is no next wafer, this process is terminated.

[0054] Note that in step S16, the usage time of the substrate processing apparatus 1 may be the RF application time. Further, instead of the usage time, the consumption amount of the first edge ring 361 may be measured, and based on the measurement result, it may be determined whether to replace the first edge ring 361.

[0055] [Edge Ring Replacement Process] Next, the edge ring replacement process according to an embodiment called in S18 of FIG. 6 will be described with reference to FIG. 7. FIG. 7 is a flowchart showing an example of the edge ring replacement process according to an embodiment. This process is executed by the control unit 100. Further, in FIG. 7, the first edge ring 361 is the edge ring on the side to be conveyed.

[0056] When this process is called, in step S20, the supply of the heat transfer gas supplied from the first through hole 112a to the first edge ring 361 side is stopped. Next, in step S22, the supply of the DC voltage to the first electrode 44 disposed at a position facing the first edge ring 361 is stopped.

[0057] Next, in step S24, the lifter pin 75 is raised, and the first edge ring 361 is lifted on the lifter pin 75 to a predetermined position. Next, in step S26, the gate valve 26 is opened and the transfer arm is inserted from the transfer port 25, and the first edge ring 361 on the lifter pin 75 is held by the transfer arm.

[0058] Next, in step S28, the lifter pin 75 is lowered, and in step S30, the transfer arm holding the first edge ring 361 exits from the transfer port 25. Next, in step S32, the transfer arm holding the replacement (new) first edge ring 361 is inserted from the transfer port 25. Next, in step S34, the lifter pin 75 is raised, and the lifter pin 75 receives the replacement first edge ring 361 from the transfer arm.

[0059] Next, lower the lifter pin 75 in step S36. Next, supply a DC voltage to the first electrode 44 on the side of the first edge ring 361 in step S38. Next, supply a heat transfer gas from the first through hole 112a to the first edge ring 361 in step S40, end this process, and return to FIG. 6.

[0060] As described above, according to the transfer method of the present embodiment, the edge ring 36 is divided into two, and the inner first edge ring 361 can be automatically transferred from the transfer port 25. In addition, the optimal replacement timing can be determined, and the first edge ring 361 can be automatically transferred promptly. Thereby, the process can be improved, and the time required for replacing and maintaining the edge ring can be shortened to improve productivity.

[0061] In the configuration of the edge ring 36 shown as an example in FIG. 2, the replacement determination process of FIG. 6 is performed, and in the edge ring replacement process of FIG. 7 called from step S18 of FIG. 6, steps S20 and S40 are skipped and the process is executed.

[0062] The embodiments disclosed above include, for example, the following aspects. (Appendix 1) A processing container, A mounting table body disposed in the processing container, An electrostatic chuck disposed on the upper surface of the mounting table body and including a substrate mounting portion and a ring mounting portion for arranging a ring surrounding the substrate, A first ring that can be transported and is disposed in the ring mounting portion, A second ring that is fixedly disposed around the first ring, A lifting mechanism for the first ring, A substrate processing apparatus comprising. (Appendix 2) The outer diameter of the first ring is smaller than the width of the substrate transfer port of the processing container, The substrate processing apparatus according to Appendix 1. (Appendix 3) The outer diameter of the second ring is larger than the width of the substrate transfer port of the processing container, The substrate processing apparatus according to Supplementary Note 1 or 2. (Supplementary Note 4) In the electrostatic chuck, at least one of the positions facing the first ring and the position facing the second ring is provided with an adsorption electrode. The substrate processing apparatus according to any one of Supplementary Notes 1 to 3. (Supplementary Note 5) In the electrostatic chuck, a first adsorption electrode disposed at a position facing the first ring, In the electrostatic chuck, a second adsorption electrode disposed at a position facing the second ring, and comprising. The substrate processing apparatus according to any one of Supplementary Notes 1 to 4. (Supplementary Note 6) A processing container, A mounting table body disposed in the processing container, An electrostatic chuck provided with a ring mounting portion for arranging a first ring that is disposed on the upper surface of the mounting table body, is transportable around the substrate mounting portion and the substrate, and a second ring that is fixedly disposed around the first ring. A lifting mechanism for the first ring, A control unit, and comprising, The control unit, A first step of moving a transfer arm holding the first ring into the processing container, A second step of moving the first ring by the transfer arm above the ring mounting portion, A third step of lowering the first ring onto the ring mounting portion by the lifting mechanism of the first ring, A substrate processing apparatus that executes a process including. (Supplementary Note 7) The control unit, A fourth step of raising the first ring above the ring mounting portion by the lifting mechanism of the first ring, A fifth step of moving the transfer arm into the processing container, A sixth step of causing the transfer arm to hold the first ring, A seventh step of moving the transfer arm out of the processing container, executing a process including the substrate processing apparatus according to Appendix 6 (Appendix 8) the outer diameter of the first ring is smaller than the width of the substrate transfer port of the processing container the substrate processing apparatus according to Appendix 6 or 7 (Appendix 9) the outer diameter of the second ring is larger than the width of the substrate transfer port of the processing container the substrate processing apparatus according to any one of Appendices 6 to 8 (Appendix 10) in the electrostatic chuck, an adsorption electrode is provided at a position facing the first ring the control unit after the third step, a step of applying an adsorption voltage to the adsorption electrode executing a process including the substrate processing apparatus according to any one of Appendices 6 to 9 (Appendix 11) in the electrostatic chuck, an adsorption electrode is provided at a position facing the first ring the control unit before the fourth step, a step of stopping the application of the adsorption voltage to the adsorption electrode executing a process including the substrate processing apparatus according to any one of Appendices 7 to 10

[0063] The mounting table, substrate processing apparatus, edge ring, and edge ring transfer method according to the embodiment disclosed this time should be considered as illustrative in all respects and not restrictive. The above embodiment can be deformed and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above plurality of embodiments can also adopt other configurations within a non - conflicting range and can be combined within a non - conflicting range.

[0064] The substrate processing apparatus of the present disclosure is applicable to any type of Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0065] In this specification, the wafer W has been described as an example of the substrate. However, the substrate is not limited thereto, and may be various substrates used for Flat Panel Displays (FPDs), printed circuit boards, etc.

Description of Reference Numerals

[0066] 1 Substrate processing apparatus 10 Processing chamber 12 Mounting table (lower electrode) 12a Mounting table body (base) 12b RF plate 24 Exhaust device 28 Second high-frequency power source 30 First high-frequency power source 32 Matching unit 36 Edge ring 361 First edge ring 362 Second edge ring 38 Electrostatic chuck 38a Electrode 38b Dielectric 40 DC power source 44 First electrode 45 Second electrode 56 Shower head 75 Lifter pin 76 Actuator 100 Control unit 112a First through hole 112b Second through hole

Claims

1. A processing container, A mounting table body disposed in the processing container, An electrostatic chuck disposed on the upper surface of the mounting table body and including a substrate mounting portion and a ring mounting portion for arranging a ring surrounding the substrate, A transportable first ring disposed on the ring mounting portion, A second ring disposed around the first ring, comprising: The outer diameter of the second ring is larger than the width of the substrate transfer port of the processing container, A substrate processing apparatus.

2. The outer diameter of the first ring is smaller than the width of the substrate transfer port of the processing container, The substrate processing apparatus according to Claim 1.

3. In the electrostatic chuck, at least one of a position facing the first ring and a position facing the second ring is provided with a suction electrode, The substrate processing apparatus according to Claim 1 or 2.

4. In the electrostatic chuck, both a position facing the first ring and a position facing the second ring are provided with suction electrodes, The substrate processing apparatus according to Claim 3.

5. The suction electrode is composed of electrodes divided into a plurality of parts, The substrate processing apparatus according to Claim 3 or 4.

6. The suction electrode is composed of electrodes divided into a plurality of parts in the radial direction, The substrate processing apparatus according to Claim 5.

7. The suction electrode is composed of electrodes divided into a plurality of parts in the circumferential direction, The substrate processing apparatus according to Claim 5.

8. In the electrostatic chuck, a through hole for supplying a heat medium is formed, which penetrates from at least one of the mounting surfaces of the first ring and the second ring of the ring mounting portion to the back surface of the electrostatic chuck. The substrate processing apparatus according to any one of claims 1 to 7.

9. In the electrostatic chuck, A first through hole for supplying a heat medium is formed, which penetrates from the mounting surface of the first ring of the ring mounting portion to the back surface of the electrostatic chuck. A second through hole for supplying a heat medium is formed, which penetrates from the mounting surface of the second ring of the ring mounting portion to the back surface of the electrostatic chuck. The substrate processing apparatus according to claim 8.

10. In the first through hole, a lifter pin for raising and lowering the first ring is inserted. The substrate processing apparatus according to claim 9.

11. At least a part of the outer peripheral portion of the first ring and the inner peripheral portion of the second ring overlap in a top view. The substrate processing apparatus according to any one of claims 1 to 10.

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