Semiconductor manufacturing apparatus and parts for semiconductor manufacturing apparatus

Abstract

Provided is a semiconductor manufacturing apparatus comprising: a processing chamber; a substrate support unit provided in the processing chamber to hold a substrate; a plate opposing the substrate support unit and having a gas inlet; and a cylindrical member supporting the plate and surrounding the substrate. The plate and the cylindrical member are components of an SiC member having an SiC film formed by CVD. The cylindrical member has a first portion which is deformable in response to a load.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and components for a semiconductor manufacturing apparatus.

Background Art

[0002] For example, Patent Document 1 proposes a method for manufacturing a susceptor for processing a silicon single crystal wafer made only of a semiconductor material by depositing a semiconductor material film on a graphite substrate by a vapor phase growth method, forming a slit by mechanical processing while leaving the substrate, and then burning out the graphite substrate.

[0003] For example, Patent Document 2 proposes a SiC member that forms a SiC film on the outer periphery of a substrate by a vapor phase growth film formation method and obtains a three-dimensional shape by the SiC film by removing the substrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique that enables deformation of components for a semiconductor manufacturing apparatus.

Means for Solving the Problems

[0006] According to one aspect of the present disclosure, there is provided a semiconductor manufacturing apparatus including a processing chamber, a substrate support portion provided in the processing chamber for holding a substrate, a plate facing the substrate support portion and having a gas inlet, and a cylindrical member supporting the plate and surrounding the periphery of the substrate. The plate and the cylindrical member are parts of a SiC member having a SiC film formed by CVD, and the cylindrical member has a first portion that is deformable with respect to a load.

Advantages of the Invention

[0007] According to one aspect, it is possible to enable deformation of parts for a semiconductor manufacturing apparatus.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are assigned to the same components, and redundant descriptions may be omitted.

[0010] [Plasma Processing System] Hereinafter, a configuration example of a plasma processing system according to an embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic cross-sectional view showing an example of a plasma processing system according to an embodiment.

[0011] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 is an example of a semiconductor manufacturing apparatus and includes a plasma processing chamber (processing chamber) 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed within the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11 and opposite to the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas discharge port for discharging gas from the plasma processing space. The side wall 10a is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0012] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. In one embodiment, the main body portion 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has the substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Also, although not shown, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. Further, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0013] The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0014] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one process gas.

[0015] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the RF power supply 31 can function as at least a part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Further, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0016] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to the conductive member of the substrate support unit 11 and / or the conductive member of the shower head 13 via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency within the range of 13 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support unit 11 and / or the conductive member of the shower head 13. The second RF generation unit 31b is coupled to the conductive member of the substrate support unit 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to the conductive member of the substrate support unit 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0017] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to the conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to other electrodes such as the electrodes in the electrostatic chuck. In one embodiment, the second DC generation unit 32b is connected to the conductive member of the shower head 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the shower head 13. In various embodiments, at least one of the first and second DC signals may be pulsed. Note that the first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0018] The exhaust system 40 can be connected to, for example, a gas outlet 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0019] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various processes described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage unit 2a2. The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0020] [Parts for semiconductor manufacturing equipment] Next, parts for the semiconductor manufacturing apparatus of the present disclosure will be described. FIG. 2 shows, as an example of parts for the semiconductor manufacturing apparatus of the present disclosure, a cylindrical member 12, a plate 14 of a shower head 13, and a ring assembly 112. However, the parts for the semiconductor manufacturing apparatus of the present disclosure are not limited thereto.

[0021] The cylindrical member 12 is a tube-shaped (cylindrical) part arranged to cover the side wall 10a (inner wall) of the plasma processing chamber 10. The cylindrical member 12 prevents reaction products generated during plasma processing from adhering to the inner wall of the plasma processing chamber 10. Further, the cylindrical member 12 may be provided at a position covering the outer peripheral side wall of the substrate support portion 11. By the cylindrical member 12 supporting the plate 14 and surrounding the periphery of the substrate W, plasma can be confined around the substrate W.

[0022] The plate 14 is a disk-shaped component that constitutes a part including the lower surface of the showerhead 13. The plate 14 is supported by a cylindrical member 12 that serves as a support portion. A plurality of gas inlets 13c penetrate the plate 14 in the thickness direction.

[0023] The ring assembly 112 is an annular member provided around the substrate W. The cylindrical member 12, the plate 14, and the ring assembly 112 are an example of components for a semiconductor manufacturing apparatus and are composed of SiC members formed by CVD (Chemical Vapor Deposition). The cylindrical member 12, the plate 14, and the ring assembly 112 are detachably provided from the plasma processing chamber 10.

[0024] For components for a semiconductor manufacturing apparatus, the requirements for low dust generation and low contamination are strict so as not to affect the processes in the plasma processing chamber 10, and tend to become even stricter in the future.

[0025] Regarding "low dust generation", it is necessary to select a material that is easily vaporized in plasma and has a high vapor pressure of a fluorinated compound, and a component having no structural defects such as a crushed layer or pores on the surface exposed to the plasma is required.

[0026] Regarding "low contamination", it is important that the component contains as little as possible so-called metal-based elements. That is, a component that contains as little as possible Na, K, Ca, Fe, Ni, Co, Cr, Mn, Mg, Y, Al, Cu, and in particular, the content of Cu is strictly restricted. Also, it is important that there are no structural defects such as a crushed layer or pores on the surface exposed to the plasma and that the material is of low density.

[0027] Silicon (Si) and SiC are materials that can generate low dust and cause low pollution. In particular, SiC is preferred as a material for parts of semiconductor manufacturing equipment. SiC is lightweight, low-cost, harder than silicon, and when it has a hollow structure, it is possible to make the wall thickness as thin as possible. Also, the best manufacturing method is CVD. By forming a SiC film with a desired thickness by CVD, a SiC member made of the SiC film can be formed, which can be applied as a part for a semiconductor manufacturing equipment with high mechanical strength, lightweight, deformable, low dust generation, and low pollution.

[0028] Regarding "replaceable", it is preferably lightweight, and it is good to use SiC, a material with low density. Also, by making structural improvements such as providing a hollow part inside the SiC member made of the SiC film formed by CVD, weight reduction can be achieved, and furthermore, functions such as flowing a heat exchange medium through the hollow part of the SiC member and adjusting the temperature can be obtained, which is even more preferable.

[0029] Regarding "low cost", the price of parts is mainly classified into raw material cost, processing cost, and fixed cost. It is important to reduce the volume of parts to suppress the raw material cost and shorten the processing time to suppress the processing cost. From the above viewpoints, if the parts for semiconductor manufacturing equipment are composed of SiC members formed by CVD, all requirements of low dust generation, low pollution, replaceable, and low cost can be satisfied. Also, by making the SiC member formed by CVD have a hollow structure, further weight reduction can be achieved. Hereinafter, the SiC member having a SiC film formed by CVD is also referred to as a "SiC member".

[0030] The SiC member has a first part that can be deformed under a load. The thickness of the first part of the SiC member is 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm. The first part may be part of the SiC member or the whole of it. When the first part is part of the SiC member, the SiC member has a second part that does not deform under a load, and the thickness of the second part may be 1.0 mm or less as long as it is thicker than the thickness of the first part.

[0031] By configuring the SiC member to be deformable with respect to a load, it is possible to stabilize the electrical and thermal contacts between the SiC member and its peripheral members. For example, when the SiC member is disposed in the plasma processing chamber 10, inclination or deviation may occur due to the machining accuracy and assembly error of the SiC member and its peripheral members, resulting in unstable electrical and / or thermal conditions at the contacts of the SiC member and its peripheral members.

[0032] In contrast, the SiC member according to the present disclosure controls the film thicknesses of the deformable first portion and the other second portion to be different during film formation by CVD. According to this, when a load is applied to the SiC member by the first portion of the SiC member, the SiC member is pressed against the peripheral member by the deformation of the first portion, and the adhesion between the SiC member and the peripheral member is enhanced. Thereby, the electrical and / or thermal stability at the contact between the SiC member and the peripheral member can be improved. However, as described above, the component may be constituted by only the first portion.

[0033] Hereinafter, an example of the configuration of the SiC member will be described with reference to FIGS. 2 to 5. However, the SiC member used as a component for a semiconductor manufacturing apparatus is not limited to the SiC member described below. Further, instead of the SiC member, a member having a carbon film formed by CVD of another material such as carbon (C) or aluminum (Al), or a member having an aluminum film can also be used.

[0034] [SiC member] FIG. 2(a) is an example of the SiC member of the component used in the semiconductor manufacturing apparatus. The SiC member 15 in FIG. 2(a) has a substantially rectangular cross section, and has an opening 15a formed in the upper portion and a hollow portion (space) 15b inside, and the opening 15a and the hollow portion 15b communicate with each other.

[0035] The SiC member 15 may have one or more openings 15a having a predetermined shape and size. Gas or cooling water can be introduced into the hollow portion 15b as a heat exchange medium to control the temperature. However, the SiC member 15 can also be used without introducing gas or cooling water into the hollow portion 15b.

[0036] The thickness of the SiC member 15 does not need to be the same throughout the entire surface. In the portion (the first portion) where deformation is desired, a film is formed to a thickness of 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm. In the other portion (the second portion), the thickness is greater than that of the first portion and is formed to a thickness of 0.5 mm or more and 1.0 mm or less. The second portion can also be made thicker than 1.0 mm. However, if the second portion is made thicker than 1.0 mm, for example, to a thickness of about 10 mm, the film deposition time by CVD becomes long, the throughput decreases, and the productivity drops. Therefore, the second portion may have a film thickness of 0.5 mm or more and 1.0 mm or less. In this way, in film deposition by CVD, the first portion of the SiC member 15 that deforms can be made thinner to a thickness of less than 1.0 mm. Also, the surface roughness Ra of the outer surface of the SiC member 15 is preferably 0.01 μm to 20 μm.

[0037] The SiC member 15 is not limited to a rectangular shape and may be other shapes applicable to various parts for semiconductor manufacturing apparatuses. Any processable structure such as necessary steps, recesses, protrusions, eaves, fins, etc. can be added to the SiC member.

[0038] As specific examples of the SiC member, FIGS. 2(b) to (e) show a plate 14 of the shower head 13, a cylindrical member 12, a structure in which the plate 14 and the cylindrical member 12 are integrated, and a ring assembly 112, respectively. The plate 14 is an example of the plate of the shower head 13.

[0039] The plate 14 in FIG. 2(b) is fabricated by forming a SiC film with a thickness of 1.0 mm to 30 mm by CVD. The plate 14 is a SiC film in the form of a disk with a diameter φ1 of 300 mm to 600 mm. Inside the plate 14, a plurality of gas inlets 13c with a diameter φ2 of 0.3 mm to several millimeters (about 5 mm) penetrate. For example, the diameter φ2 may be 5 mm or less. Also, the gas inlet 13c may be not only a round hole but also a slit-shaped hole. In this case, the slit width is 1 mm or more and the length is not particularly limited.

[0040] The cylindrical member 12 in Fig. 2(c) is a cylindrical SiC film with a diameter φ1 of 300 mm to 600 mm formed by CVD and slightly smaller than the diameter of the side wall 10a of the plasma processing chamber 10, and the upper and lower surfaces are open. The height of the cylindrical member 12 is 10 mm to 200 mm.

[0041] In the integrated structure 3 of the plate 14 and the cylindrical member 12 in Fig. 2(d), the upper surface of the cylindrical member 12 is covered by the plate 14. The diameters of the plate 14 and the cylindrical member 12 are the same dimension. The upper surface of the cylindrical member 12 and the outer peripheral surface of the plate 14 may be integrally formed or joined by brazing or the like.

[0042] The ring assembly 112 in Fig. 2(e) is manufactured by forming an annular SiC film by CVD. The ring assembly 112 has an inner diameter (diameter) φ3 of 200 mm to 500 mm, which is slightly larger than the diameter of the substrate W, and an outer diameter (diameter) φ1 of 300 mm to 600 mm. The height of the ring assembly 112 is 1.0 mm to 10 mm. Any SiC member is formed to have a thickness of 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm, in the portion (the first portion) where deformation is desired. In the other portion (the second portion), the thickness is thicker than that of the first portion and preferably 0.5 mm or more and 1.0 mm or less.

[0043] Fig. 2(f) is a modified example of the integrated structure 3 of the plate 14 and the cylindrical member 12 in Fig. 2(d), and holes for gas inlets 13c may be additionally provided on the side surface of the cylindrical member 12.

[0044] Figs. 3(a) and (b) show an example of the cross section taken along the line A - A in Fig. 2(d). Figs. 3(a) and (b) are the integrated structure 3 of the SiC member in which the plate 14 and the cylindrical member 12 are integrated, and in both cases, the film thickness of the central portion 12a of the cylindrical member 12 is thinner.

[0045] In FIGS. 3(a) and 3(b), the different configurations are that the integrated structure 3 of the SiC member in FIG. 3(b) has hollow portions 14a and 12d inside, but there are no such hollow portions in FIG. 3(a), and the other configurations are the same.

[0046] In FIGS. 3(a) and 3(b), the thickness of the central portion 12a of the cylindrical member 12 is thinner than the thicknesses of its upper portion 12b and its lower portion 12c. In the integrated structure 3 of the SiC member, the central portion 12a of the cylindrical member 12 is a first portion that can be deformed with respect to a load. The thickness Ta in FIG. 3(a) is 0.05 mm or more and less than 1.0 mm, and more preferably 0.05 mm or more and less than 0.5 mm.

[0047] In FIG. 3(a), the thicknesses Tb and Tc of the upper portion 12b and the lower portion 12c of the cylindrical member 12 may be thicker than the first portion. For example, the thicknesses Tb and Tc may be 0.5 mm or more and 1.0 mm or less. The upper portion 12b and the lower portion 12c of the cylindrical member 12 are second portions that do not deform with respect to a load. The thickness Td of the plate 14 may be 1 mm or more and 30 mm or less. The plate 14 is a second portion that does not deform with respect to a load.

[0048] The integrated structure 3 of the SiC member can be disposed not only at the bottom of the plasma processing chamber 10 but also on the upper surface of a cover ring 113 (see FIG. 5) described later. In the integrated structure 3, as shown by the arrows in FIGS. 3(a) and 3(b), when a load is applied from above the plate 14 downward, the central portion 12a of the cylindrical member 12 deforms with respect to the load. Due to this deformation of the central portion 12a, the bottom of the cylindrical member 12 is strongly pressed against a peripheral member of the cylindrical member 12 (for example, the bottom of the plasma processing chamber 10 or the upper surface of the cover ring 113, etc.), and the adhesion can be enhanced. Thereby, the contact point B can be electrically and / or thermally stabilized. Thus, since at least a part of the SiC member is deformable, it can deform with respect to the load. Thereby, the contact with the peripheral member can be stabilized without the need for fastening such as a screw. For example, when the contact point B in FIGS. 3(a) and 3(b) functions as an electrical and / or thermal contact point, it can be electrically and / or thermally stabilized.

[0049] For example, when the plasma processing chamber 10 is at ground potential, the contact point B functioning as an electrical contact can be stabilized. That is, when a load is applied from above the plate 14 downward, at least the central portion 12a of the cylindrical member 12 deforms with respect to the load. Due to this deformation, the adhesion between the SiC member and the plasma processing chamber 10, etc. at the electrical contact point B is increased. Thereby, the cylindrical member 12 can be stably controlled to the ground potential.

[0050] The integrated structure 3 of the SiC member shown in FIG. 3(b) has hollow portions 14a and 12d inside. The hollow portions 14a and 12d may be configured as flow paths for flowing a heat exchange medium such as gas or cooling water.

[0051] In this case, the thickness of the central portion 12a is the total thickness of the inner thickness Ta (= not less than 0.025 mm and less than 0.5 mm) and the outer thickness Ta' (= not less than 0.025 mm and less than 0.5 mm). That is, the thickness of the central portion 12a is not less than 0.05 mm (= 0.025 mm × 2) and less than 1.0 mm (= 0.5 mm × 2).

[0052] The thicknesses of the upper part 12b and the lower part 12c are the sum of the inner thicknesses Tb, Tc (≥0.25 mm and <0.5 mm) and the outer thicknesses Tb’, Tc’ (≥0.25 mm and <0.5 mm), and are 0.5 mm (=0.25 mm×2) or more and 1.0 mm (=0.5 mm×2) or less.

[0053] For example, when a heat exchange medium is passed through the hollow portions 14a, 12d in the integrated structure 3, the contact point B that functions as a thermal contact point can be stabilized. That is, when a load is applied from above the plate 14 downward, at least the central portion 12a of the cylindrical member 12 deforms with respect to the load. Due to this deformation, the adhesion between the SiC member and the plasma processing chamber 10 or the like at the thermal contact point B is enhanced. Thereby, the heat extraction performance when extracting heat from the integrated structure 3 to the plasma processing chamber 10 or the like, such as heat input from the plasma, can be improved.

[0054] Parts for semiconductor manufacturing devices formed from ceramics or silicon members cannot be deformed and break or crack under a load. In contrast, the SiC member according to the present disclosure has the SiC film formed by CVD described above, has a structure that can be deformed without breaking, and is suitable as a part for a semiconductor manufacturing device that also functions as an electrical contact or a thermal contact.

[0055] That is, an SiC film is formed by CVD such that the thickness of the deformable first portion is a film thickness of 0.05 mm or more and less than 1.0 mm, and the SiC member of the present disclosure is given a strength that allows it to be deformed and not break. During production, at the time of film formation by CVD, the planar portion of the SiC member may be configured as a deformable first portion with a film thickness of 0.05 mm or more and less than 1.0 mm, and the corner portion of the SiC member may be configured as a second portion that is not deformed with a film thickness of 0.5 mm or more and 1.0 mm or less. For example, the planar portion is formed to a thickness of 0.5 mm by CVD, and the corner portion is formed to a thickness of 1.0 mm, which is twice the thickness of the planar portion.

[0056] When manufacturing SiC members of the same shape by sintering, when a load is applied to the first part with a thickness of 0.05 mm or more and less than 1.0 mm, the SiC breaks without deformation. On the other hand, in the SiC member in which the film thickness of the SiC film in the first part is controlled to be 0.05 mm or more and less than 1.0 mm by CVD, the SiC member can be deformed and the breakage of the SiC member can be prevented.

[0057] Furthermore, by having hollow portions 14a and 12d inside Fig. 3(b), the weight of the SiC member can be reduced and the replacement can be facilitated. Furthermore, by using the hollow portions 14a and 12d as flow paths to flow cooling water or the like for temperature control, or by controlling the SiC member such as the cylindrical member 12 to a desired potential, temperature control and potential control become possible. For example, when the cylindrical member 12 is controlled to a low temperature, reaction products are likely to adhere, and when the cylindrical member 12 is controlled to a high temperature, reaction products are less likely to adhere. Also, when the potential of the cylindrical member 12 is set to the same potential as the reaction products in the plasma processing chamber 10, they repel each other, and when the potential is opposite to that of the reaction products, the reaction products are attracted, and more reaction products can be made to adhere to the cylindrical member 12.

[0058] From the above, it is preferable that the SiC member is configured so that the potential can be adjusted. Also, it is preferable that the SiC member is configured so that the temperature can be adjusted.

[0059] Fig. 4 is an enlarged view of a part of the SiC member. Figs. 4(b) to 4(d) show an example of the SiC member 16 configured so that the potential and / or temperature can be adjusted. The SiC member 16 shown in Fig. 4(a) has an opening 15a and a hollow portion 15b formed inside, and the opening 15a and the hollow portion 15b communicate with each other. A heat exchange medium can flow through the hollow portion 15b. Since the SiC member 16 composed of the SiC film formed by CVD has a relatively low resistivity (several Ωcm), when a potential is directly applied to the SiC member 16, potential control can be achieved. However, problems such as variations in potential and heat generation may occur in the SiC member 16.

[0060] Therefore, as shown in FIGS. 4(b) to 4(d), it is preferable that the SiC member 16 has a highly resistive conductive film 17 on the SiC film and is configured to be able to adjust the potential. In FIG. 4(b), a conductive film 17 is formed on the surface of the SiC film, the conductive film 17 is used as a contact with the peripheral member, and a potential is applied to the conductive film 17 which is the contact. A heat exchange medium can flow through the hollow portion 15b.

[0061] As shown in FIG. 4(c), highly resistive conductive films 17a and 17b are formed on the inner surface of the SiC film of the SiC member 16, the conductive films 17a and 17b are exposed from the opening 15a to provide contacts with the peripheral member, and a potential may be applied to the contacts. The conductive films 17a and 17b are insulated by the insulating film 9. Thereby, different potentials V1 and V2 can be applied to the conductive films 17a and 17b exposed from the opening 15a respectively. Thereby, the SiC member 16 can be controlled to different potentials V1 and V2. For example, variations in control can be increased, such as controlling the conductive film 17a to a low potential and the conductive film 17b to a high potential. Also in the SiC member 16 of FIG. 4(c), a heat exchange medium can flow through the hollow portion 15b. Further, a current can flow through the conductive films 17a and 17b in the hollow portion 15b. The conductive films 17a and 17b may be semiconductors. Thereby, a potential can be applied to the conductive films 17a and 17b or the semiconductors.

[0062] As shown in FIG. 4(d), a SiC member (SiC film) 16 having no hollow portion 15b is formed by CVD, highly resistive conductive films 17a and 17b are formed on its surface, and different powers may be applied to the conductive films 17a and 17b. Thereby, the conductive films 17a and 17b can be controlled to different potentials V1 and V2. The conductive films 17a and 17b in FIGS. 4(b) to 4(d) may be semiconductors.

[0063] By applying the conductive films 17, 17a, and 17b shown in FIGS. 4(b) to 4(d) to the SiC member 16, variations in potential and heat generation in the SiC member 16 can be avoided, and it can be stably controlled to a desired potential. Further, the conductive films 17, 17a, and 17b shown in FIGS. 4(b) to 4(d) can also be used as heater electrode patterns, and may be configured to be able to adjust the temperature. In this case, by applying a potential to the conductive films 17, 17a, and 17b, it is possible to provide a difference in the temperature to be controlled for each of the conductive films 17, 17a, and 17b.

[0064] In the SiC member 16 of FIG. 4(c), the conductive films 17a and 17b can be simultaneously controlled to different temperatures and different potentials. On the other hand, in the SiC member 16 of FIG. 4(d), there is a possibility that the conductive films 17a and 17b cannot be controlled to different temperatures and different potentials. Therefore, in the configuration of the SiC member 16 of FIG. 4(d), it is necessary to distinguish whether to control the conductive films 17a and 17b of the SiC member 16 to different potentials V1 and V2 or to different temperatures.

[0065] When the conductive films 17a and 17b are provided on the inner surface of the SiC member 16, any manufacturing method capable of forming the conductive films 17a and 17b inside the SiC film of the SiC member 16 of FIG. 4(c) can be used. For example, a method of forming a SiC film by CVD on the conductive films 17a and 17b after forming the high melting point conductive films 17a and 17b inside is conceivable.

[0066] FIG. 5 shows another example of a SiC member which is a component for a semiconductor manufacturing apparatus according to an embodiment. In FIG. 5, a ring assembly 112 formed of a SiC film by CVD is shown as an example of a SiC member. FIG. 5 shows an enlarged view of a part (outer periphery) of a main body portion 111 on the outer periphery of a substrate W where the ring assembly 112 is placed.

[0067] The ring assembly 112 is located on the outer periphery of the substrate W and is placed on the ring support surface 111b for supporting the ring assembly 112. More specifically, the main body 111 is formed of aluminum, and its surface is coated with a sprayed alumina sprayed film 111c. An annular cover ring 113 made of quartz is arranged on the outer periphery of the main body 111. The ring assembly 112 is placed on the annular region (ring support surface) 111b of the main body 111 and the ring support surface 113b of the cover ring 113.

[0068] Inside the sprayed film 111c below the substrate W, an electrode 115 for the substrate is arranged, and inside the sprayed film 111c below the ring assembly 112, an electrode 114 for the ring assembly 112 is arranged. The electrodes 114 and 115 are composed of a metal such as tungsten. Each of the electrode 115 for the substrate and the electrode 114 for the ring assembly 112 may be an adsorption electrode for electrostatically adsorbing the substrate W and the ring assembly 112, or may be a heater electrode for controlling the temperature of the substrate W and the ring assembly 112. Here, it will be described as an adsorption electrode.

[0069] When a DC voltage is applied to the electrode 114 and the ring assembly 112 is electrostatically adsorbed to the main body 111, deforming the thickness Tg of the ring assembly 112 above the electrode 114 can enhance the adhesion between the lower surface of the ring assembly 112 and the upper surface of the main body 111, and increase the adsorption force. Therefore, the thickness Tg of the ring assembly 112 on the electrode 114 is made thin so as to be deformable. That is, the portion of the ring assembly 112 on the electrode 114 is the first deformable portion, and its thickness Tg is 0.05 mm or more and less than 1.0 mm.

[0070] On the one hand, the thickness of the other ring assembly 112 may be a thickness that does not deform. For example, the thickness Te of the ring assembly 112 on the cover ring 113 may be a thickness of 0.5 mm or more and 1.0 mm or less that does not deform, or may be a thickness of 0.05 mm or more and less than 1.0 mm that can deform. Similarly, the thickness Tf of the portion disposed to penetrate into the edge of the substrate W by the stepped portion 112f inside the ring assembly 112 may be a thickness that does not deform or may be a thickness that deforms. Note that the expression of 0.5 mm or more and 1.0 mm or less is a non-deforming thickness, which generally means non-deforming, and is a direction in which it becomes easier to deform as it approaches 0.5 mm.

[0071] [Manufacturing Method of SiC Member] Next, an example of the manufacturing method of the SiC member of the present disclosure will be described with reference to FIG. 6. First, as shown in FIG. 6(a), graphite is processed into a desired shape and a desired surface roughness Ra to form a base 27. The shape of the base 27 is not limited. The base 27 may be made of a material that can be removed by heating or chemicals, such as silicon, not limited to graphite. In this example, a graphite base 27 is used.

[0072] Next, as shown in FIG. 6(b), an SiC film 15' is formed to a desired thickness by CVD to coat the base 27. For example, the SiC film 15' is formed by CVD using the plasma processing apparatus 1 of FIG. 1 to a desired thickness to produce the SiC member 15. For example, the SiC film 15' may be formed to a desired thickness by a plasma CVD apparatus or a thermal CVD apparatus to produce the SiC member 15. The desired thickness of the SiC film 15' may be formed to a thickness of 0.05 mm or more and less than 1.0 mm in a portion where deformation is possible, and may be formed to a thickness of 0.5 mm or more and 1.0 mm or less in a portion where deformation is not necessary.

[0073] Note that, as shown in FIG. 6(c), the graphite base 27 may be provided with one or more holding portions 19 of the base 27. The holding portion 19 of the base 27 can be diverted to the introduction portion of the heat exchange medium. However, the introduction portion of the heat exchange medium may be formed in a later process.

[0074] When a SiC film is formed on the surface of the base 27 by CVD, the SiC member shown in FIG. 6(c) is formed. The formation of the SiC film may be by CVD method, but is not limited thereto. The formation of the SiC film may be by a vacuum evaporation type PVD (Physical Vapor Deposition) method or an MBE (Molecular Beam Epitaxy) method.

[0075] Next, as shown in FIG. 6(d), the surface of the formed SiC member 15 is processed to a surface roughness Ra of 0.01 μm to 20 μm by surface treatment. Also, the holding portion 19 of the base 27 is removed.

[0076] Next, as shown in FIG. 6(e), the base 27 on which the SiC member 15 of the SiC film is formed is heated in a high-temperature oxidation atmosphere to remove the base 27. When the base 27 is made of graphite as in the manufacturing method of the present disclosure, the base 27 disappears as carbon dioxide and becomes the hollow portion 15b. Thereby, the SiC member 15 is completed.

[0077] As described above, according to the component for a semiconductor manufacturing apparatus according to the present embodiment, the first portion of the SiC member constituting the component is made to have a thickness of 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm, by forming a SiC film by CVD. Thereby, deformation can be enabled by the first portion of the component for a semiconductor manufacturing apparatus.

[0078] As a component of the present disclosure, the SiC member can maintain the environment in the chamber in a low-dust and low-pollution state by, for example, replaceably arranging an integrated structure 3 of a plate 14 and a cylindrical member 12 shown in FIG. 2(d) in a plasma processing chamber 10. The SiC member can be applied to a semiconductor manufacturing apparatus not only as the integrated structure 3 of the plate and the cylindrical member of the shower head, but also as the plate of the shower head, the cylindrical member, and the ring assembly 112. The SiC member may be a covering 113 formed of a SiC film by CVD. When the main body 111 is arranged to be movable up and down, a SiC member formed of a SiC film by CVD may be applied to a bellows that is attached to the lower part of the main body 111 and partitions the atmospheric state outside the plasma processing chamber 10 and the vacuum state inside the chamber.

[0079] The semiconductor manufacturing apparatus and the components for the semiconductor manufacturing apparatus according to the embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The embodiments can be modified and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above plurality of embodiments can also adopt other configurations and can be combined within a non-contradictory range.

[0080] The semiconductor manufacturing apparatus of the present disclosure is applicable to any type of apparatus such as an Atomic Layer Deposition (ALD) apparatus, a Capacitively Coupled Plasma (CCP), an Inductively Coupled Plasma (ICP), a Radial Line Slot Antenna (RLSA), an Electron Cyclotron Resonance Plasma (ECR), and a Helicon Wave Plasma (HWP). And the components for the semiconductor manufacturing apparatus of the present disclosure can be used in any of the above types of apparatuses.

[0081] In addition, although a plasma processing apparatus has been described as an example of a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus may be any substrate processing apparatus that performs a predetermined process (for example, film formation process, etching process, etc.) on a substrate, and is not limited to a plasma processing apparatus.

[0082] This application claims the priority of the basic application No. 2021-048613 filed with the Japan Patent Office on March 23, 2021, and incorporates the entire contents thereof by reference herein.

Explanation of Reference Numerals

[0083] 1 Plasma processing apparatus 2 Control unit 3 Integrated structure 2a Computer 2a1 Processing unit 2a2 Storage unit 2a3 Communication interface 10 Plasma processing chamber 11 Substrate support unit 12 Cylindrical member 13 Shower head 13c Gas inlet 14 Plate 21 Gas source 20 Gas supply unit 30 Power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32a First DC generation unit 32b Second DC generation unit 40 Exhaust system 111 Main body 112 Ring assembly W Substrate

Claims

1. A processing chamber, A substrate support portion provided in the processing chamber for holding a substrate, A plate facing the substrate support portion and having a gas inlet, A cylindrical member that supports the plate and surrounds the periphery of the substrate, and The plate and the cylindrical member are parts of a SiC member having a SiC film formed by CVD, The cylindrical member has a first portion that is deformable with respect to a load, A semiconductor manufacturing apparatus.

2. The parts of the SiC member are an integrated structure of the plate and the cylindrical member, The semiconductor manufacturing apparatus according to claim 1.

3. The SiC member has a hollow portion inside, The semiconductor manufacturing apparatus according to claim 1 or claim 2.

4. The thickness of the first portion of the SiC member is 0.05 mm or more and less than 1.0 mm, The semiconductor manufacturing apparatus according to any one of claims 1 to 3.

5. The thickness of the first portion of the SiC member is 0.05 mm or more and less than 0.5 mm, The semiconductor manufacturing apparatus according to claim 4.

6. The SiC member has a second portion that does not deform with respect to a load, and the thickness of the second portion is thicker than the thickness of the first portion, The semiconductor manufacturing apparatus according to any one of claims 1 to 5.

7. The thickness of the second portion of the SiC member is 1.0 mm or less, The semiconductor manufacturing apparatus according to claim 6.

8. A component used in a plasma processing chamber, It consists of a SiC member having a SiC film formed by CVD, The SiC member is disposed in a plasma processing space and has a first portion that is deformable with respect to a load, and is a component for a semiconductor manufacturing apparatus.

9. The SiC member includes at least one of a plate of a shower head, a cylindrical member, an integrated structure of the plate of the shower head and the cylindrical member, and a ring assembly. A component for a semiconductor manufacturing apparatus according to claim 8.

10. A component of a SiC member having a SiC film formed by CVD, The SiC member has a first portion that is deformable with respect to a load, The SiC member has a hollow portion inside, A component for a semiconductor manufacturing apparatus.

11. A component of a SiC member having a SiC film formed by CVD, The SiC member has a first portion that is deformable with respect to a load, The thickness of the first portion of the SiC member is 0.05 mm or more and less than 1.0 mm. A component for a semiconductor manufacturing apparatus.

12. The thickness of the first portion of the SiC member is 0.05 mm or more and less than 0.5 mm. A component for a semiconductor manufacturing apparatus according to claim 11.

13. A component of a SiC member having a SiC film formed by CVD, The SiC member has a first portion that is deformable with respect to a load, The SiC member has a second portion that does not deform with respect to a load, and the thickness of the second portion is thicker than the thickness of the first portion. A component for a semiconductor manufacturing apparatus.

14. The thickness of the second portion of the SiC member is 1.0 mm or less. A component for a semiconductor manufacturing apparatus according to claim 13.

15. The SiC member has a hollow portion inside. A component for a semiconductor manufacturing apparatus according to Claim 8 or Claim 9.

16. The thickness of the first portion of the SiC member is 0.05 mm or more and less than 1.0 mm. A component for a semiconductor manufacturing apparatus according to Claim 8 or Claim 9.

17. The SiC member has a second portion that does not deform under load, and the thickness of the second portion is thicker than the thickness of the first portion. A component for a semiconductor manufacturing apparatus according to Claim 8 or Claim 9.

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