Perovskite material bypass diode and method for manufacturing the same, perovskite solar cell module and method for manufacturing the same, solar power generation module

Abstract

The present disclosure discloses a perovskite material bypass diode and a manufacturing method thereof, a perovskite solar cell module and a manufacturing method thereof, and a photovoltaic module, which relates to the technical field of photovoltaic power generation and reduces the difficulty of manufacturing a perovskite material bypass diode. The manufacturing method of the perovskite material bypass diode includes the steps of providing a layer of a perovskite material, and treating the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, thereby forming a perovskite material bypass diode. The perovskite material bypass diode and a manufacturing method thereof, the perovskite solar cell module and a manufacturing method thereof, and the photovoltaic module according to the present disclosure are used in manufacturing a photovoltaic module.

Description

Technical Field

[0001] This application claims priority to a Chinese patent application filed with the China National Intellectual Property Administration on August 10, 2021, with application number 202110927793.1 and title of invention "Perovskite Material Bypass Diode and Its Manufacturing Method, Perovskite Solar Cell Module and Its Manufacturing Method, Solar Power Generation Module", the entire content of which is incorporated herein by reference.

[0002] The present disclosure relates to the technical field of solar power generation, and particularly to a perovskite material bypass diode and its manufacturing method, a perovskite solar cell module and its manufacturing method, and a solar power generation module.

Background Art

[0003] Conventional perovskite material bypass diodes generally use semiconductor materials such as silicon and germanium, and form the PN junction structure of the perovskite material bypass diode through various steps such as thin film deposition and photolithography.

[0004] In the manufacturing process of conventional perovskite material bypass diodes, it is necessary to use many high-temperature and high-vacuum film deposition apparatuses, and the manufacturing process is complex. And processes such as photolithography in the manufacturing process have extremely high requirements for the process and the apparatus.

Summary of the Invention

Problems to be Solved by the Invention

[0005] An object of the present disclosure is to provide a perovskite material bypass diode and its manufacturing method, a perovskite solar cell module and its manufacturing method, and a solar power generation module in order to reduce the difficulty of manufacturing the perovskite material bypass diode.

Means for Solving the Problems

[0006] According to a first aspect, the present disclosure provides a method for manufacturing a perovskite material bypass diode. The method for manufacturing the perovskite material bypass diode includes providing a layer of perovskite material, processing the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, thereby forming a perovskite material bypass diode.

[0007] According to the above technical solution, in view of the fact that the crystal structure of the perovskite material has the characteristics of a "soft lattice", at a low temperature (300 degrees or less), a P-type perovskite material or an N-type perovskite material can be formed by processes such as simple atmospheric heat treatment and ion diffusion. By heat treatment, the conductivity type of the perovskite material can be converted between P-type and N-type. Thereby, by a simple process such as heat treatment, the perovskite material layer can be easily processed to form a P-type perovskite material region and an N-type perovskite material region. At this time, the manufacturing process of the perovskite material bypass diode is simple, the cost is low, the difficulty of manufacturing is greatly reduced, and the industrial application of the perovskite material bypass diode in many applications such as solar power generation, light-emitting diodes, and detectors can be facilitated.

[0008] In addition, when the perovskite material bypass diode is applied to a perovskite solar cell module, the perovskite material bypass diode can be manufactured in-situ using the existing perovskite material layer of the perovskite solar cell module. At this time, in the perovskite solar cell module manufactured by the scribing process, one perovskite material bypass diode can be arranged for each perovskite cell, thereby avoiding the hot spot effect and the attenuation of the energy conversion efficiency, and improving the stability and lifespan of the perovskite cell.

[0009] In some embodiments, the general formula of the perovskite material in the perovskite material layer is ABX3, where A is a monovalent cation, B is a divalent cation, and X is a monovalent anion. The content of AX in the P-type perovskite material region is greater than the content of BX2, and the content of AX in the N-type perovskite material region is less than the content of BX2. At this time, by adjusting the contents of AX and BX2, the conductivity type of the perovskite material can be easily adjusted, and furthermore, the PN junction structure of the perovskite material layer can be easily fabricated.

[0010] In some embodiments, the step of processing the perovskite material layer includes the step of locally heating the perovskite material layer to form an N-type perovskite material region and / or the step of heat-treating the local part of the perovskite material layer in an atmosphere of AX to form a P-type perovskite material region. Both heating and heat treatment in an AX atmosphere are simple process methods. By locally processing the perovskite material layer by these simple process methods, the PN junction structure of the perovskite material bypass diode can be fabricated simply and rapidly.

[0011] According to a second aspect, the present disclosure provides a perovskite material bypass diode obtained by the manufacturing method according to any one of the first aspect or the embodiments of the first aspect.

[0012] Regarding the beneficial effects of the perovskite material bypass diode according to the second aspect, reference may be made to the beneficial effects of the manufacturing method of the perovskite material bypass diode according to any one of the first aspect or the embodiments of the first aspect, and duplicate descriptions are omitted here.

[0013] According to a third aspect, the present disclosure provides a perovskite solar cell module. The perovskite solar cell module includes a plurality of perovskite cells connected in series and at least one perovskite material bypass diode connected in parallel to the perovskite cells, and is obtained by processing a perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region.

[0014] According to the above technical solution, the perovskite solar cell module includes at least one perovskite material bypass diode connected in parallel to the perovskite cell. When the perovskite cell of the perovskite solar cell module can operate normally and perform photoelectric conversion, the perovskite material bypass diode does not turn on, and the photo-generated electrons and photo-generated holes are transported in a plurality of serially connected perovskite cells. In the perovskite solar cell module, when a failure problem such as deterioration or decomposition occurs in the perovskite material layer (perovskite material) of the perovskite cell connected in parallel to the perovskite material bypass diode, the perovskite material bypass diode bypasses the failed perovskite cell. At this time, the perovskite material bypass diode connected in parallel to the failed perovskite cell is connected in series to the perovskite cells before and after it and turns on, and the current (photo-generated electrons and photo-generated holes) of the perovskite solar cell module is transported by the perovskite material bypass diode. Thereby, the power loss caused by the current transport by the failed perovskite cell can be avoided, and the conversion efficiency of the perovskite solar cell module can be further improved.

[0015] In addition, since the bypass diode is a perovskite material bypass diode, a PN junction can be easily manufactured using a P-type perovskite material and an N-type perovskite material to form a perovskite material bypass diode. Further, since the material of the perovskite material bypass diode is the same as the material of the perovskite material layer of the perovskite cell, the perovskite material bypass diode can be manufactured simultaneously with the manufacture of the perovskite material layer, or the perovskite material bypass diode can be manufactured using the perovskite material layer.

[0016] In some embodiments, the number of perovskite material bypass diodes is the same as the number of perovskite cells, and the perovskite material bypass diodes are connected in parallel in a one-to-one correspondence with the perovskite cells. At this time, one perovskite material bypass diode can be arranged for each perovskite cell of the perovskite solar cell module. No matter which perovskite cell fails, it can be bypassed by the perovskite material bypass diode connected in parallel with it, and further the power consumption of the failed perovskite cell can be avoided. Thereby, the entire perovskite solar cell module can be protected from failure.

[0017] In some embodiments, the general formula of the perovskite material of the perovskite material bypass diode is ABX3, where A is a monovalent cation, B is a divalent cation, and X is a monovalent anion. The content of AX in the P-type perovskite material region of the perovskite material bypass diode is greater than the content of BX2, and the content of AX in the N-type perovskite material region of the perovskite material bypass diode is less than the content of BX2. At this time, by adjusting the contents of AX and BX2, the conductivity type of the perovskite material can be easily adjusted, and further the PN junction structure of the perovskite material bypass diode can be easily fabricated.

[0018] In some embodiments, each perovskite material bypass diode is provided between the positive and negative electrodes of the perovskite battery. At this time, the two electrodes of the perovskite material bypass diode can be directly electrically contacted with the two electrodes of the perovskite battery without passing through other structures for connection assistance, thereby simplifying the structure. The P-type perovskite material region of the perovskite material bypass diode is electrically connected to the negative electrode of the perovskite battery, and the N-type perovskite material region of the perovskite material bypass diode is connected to the positive electrode of the perovskite battery. At this time, the current direction of the perovskite material bypass diode is the same as the current direction of the perovskite battery connected in parallel to the perovskite material bypass diode, and the parallel connection of the perovskite material bypass diode and the perovskite battery can be realized.

[0019] In some embodiments, the cross-section of the perovskite material bypass diode is rectangular, triangular or trapezoidal. At this time, perovskite material bypass diodes with different shapes and sizes can be installed according to the circuit design of the perovskite solar cell module.

[0020] In some embodiments, the perovskite solar cell module further includes an electrical separation wall provided between the perovskite material bypass diode and the perovskite material layer of the perovskite battery, and the material of the electrical separation wall includes any one of a dielectric material, a ceramic insulating material or an organic insulating material. At this time, the electrical separation wall can well realize the insulation separation between the perovskite material bypass diode and the perovskite material layer, avoid problems such as leakage between the two, and improve the bypass performance of the perovskite material bypass diode.

[0021] In some embodiments, each perovskite material bypass diode is manufactured by heat-treating an edge portion of the perovskite material layer of the perovskite solar cell. At this time, during the manufacturing process of the perovskite solar cell, a part of the region is separated from the perovskite material layer, and through post-treatment, a perovskite material bypass diode having a PN junction is constructed in this region. The manufacturing method of this perovskite material bypass diode is compatible with the process of the conventional scribing module, and the manufacturing of the perovskite material bypass diode can be realized by simply adding several steps, and the process is simple. In addition, this method requires few improvements to the conventional process, results in little increase in cost, and is easy for production and application.

[0022] According to a fourth aspect, the present disclosure provides a method for manufacturing a perovskite solar cell module. The method for manufacturing the perovskite solar cell module includes providing a module base, the module base including a functional layer, and the functional layer including a perovskite material layer, exposing a part of the perovskite material layer, processing the exposed portion of the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, thereby forming a perovskite material bypass diode, and connecting the perovskite material bypass diode in parallel to the perovskite solar cell of the perovskite solar cell module.

[0023] According to the above technical solution, in the manufacturing process of the perovskite solar cell module, an existing perovskite material layer in the perovskite solar cell module is utilized, and a part of it is exposed and processed to form a PN junction structure of the perovskite material bypass diode. That is, a perovskite material bypass diode is fabricated in situ on the perovskite material layer. At this time, the fabrication process of the perovskite material bypass diode is well combined with the scribing process, and one perovskite material bypass diode is arranged for each perovskite battery, so as to avoid the hot spot effect and the attenuation of the energy conversion efficiency, and improve the stability and lifespan of the perovskite battery.

[0024] In some embodiments, the perovskite material bypass diodes are connected in parallel in a one-to-one correspondence with the perovskite batteries of the perovskite solar cell module.

[0025] In some embodiments, after providing the module base, before exposing a part of the perovskite material layer, the manufacturing method of the perovskite solar cell module further includes the steps of opening a series connection groove in the module base, forming at least one electrical separation wall in the module base, each electrical separation wall being located in the region where the perovskite battery is located and dividing the functional layer of the perovskite battery into a battery region and a bypass diode region, and then forming a second electrode layer filling the series connection groove on the module base.

[0026] In some embodiments, the step of exposing a part of the perovskite material layer includes the step of opening a separation groove in the second electrode layer to separate adjacent perovskite batteries, and the separation groove extends into the interior of the perovskite material layer, thereby exposing a part of the perovskite material layer in each bypass diode region. At this time, by opening the separation groove, a part of the perovskite material layer in the bypass diode region can be easily exposed, and the exposed part of the perovskite material layer can be easily processed subsequently.

[0027] In some embodiments, the step of forming at least one electrical isolation wall based on modules includes the step of opening at least one electrical isolation groove penetrating the functional layer based on modules, and the step of filling the electrical isolation groove with an insulating material to form the electrical isolation wall. The filling method of the insulating material is film formation, vapor deposition or printing, and the opening methods of the series connection groove and the electrical isolation groove are both selected from chemical etching, laser scribing or mechanical scribing. At this time, by opening the electrical isolation groove and filling it with an insulating material, the functional layer of the perovskite battery can be easily divided into a bypass diode region and a battery region. Also, the opening of the electrical isolation groove and the opening of the series connection groove may be executed synchronously, and the process is simple.

[0028] In some embodiments, the width of the series connection groove is 10 μm to 100 μm, the width of the electrical isolation groove is 5 μm to 50 μm, and the distance between the electrical isolation groove and the series connection groove is 20 μm to 200 μm. At this time, the electrical isolation wall formed by the electrical isolation groove has a sufficient width and can exert a good insulation separation effect. Also, there is sufficient space between the electrical isolation groove and the series connection groove, and it is easy to install the separation groove for dividing the perovskite battery.

[0029] In some embodiments, in the same electrode block, the separation groove is located between the series connection groove and the electrical isolation wall. At this time, the separation groove divides two perovskite batteries and separates the series connection groove of the previous perovskite battery from the perovskite material bypass diode of the subsequent perovskite battery.

[0030] The depth to which the isolation groove extends into the perovskite material layer is 30% or more and 70% or less of the thickness value of the perovskite material layer. At this time, the bypass diode region is divided into two parts, one of which is exposed and the other remains blocked by the material at the bottom of the isolation groove. These two parts respectively correspond to the P region and the N region of the perovskite material bypass diode. Also, the volume difference between the P region and the N region is small, ensuring the formation of a PN junction with good functionality and avoiding malfunction due to a large volume difference.

[0031] In some embodiments, the width of the isolation groove is 10 μm to 100 μm.

[0032] In some embodiments, the exposed portion of the perovskite material layer is the exposed portion of the perovskite material layer in the bypass diode region, and the step of processing the exposed portion of the perovskite material layer includes the step of increasing the content of AX in the exposed portion of the perovskite material layer in the bypass diode region, or the step of decreasing the content of AX in the exposed portion of the perovskite material layer in the bypass diode region. Since the conduction type of the perovskite material can be adjusted by the ratio of AX to BX2 in the perovskite material, the ratio of AX to BX2 can be easily adjusted by changing the content of AX, thereby forming a PN junction.

[0033] In some embodiments, the step of processing the exposed portion of the perovskite material layer Heating the exposed portion of the perovskite material layer in the bypass diode region to form an N-type perovskite material region of the perovskite material bypass diode, or in an atmosphere of AX, heat-treating the exposed portion of the perovskite material layer in the bypass diode region to form a P-type perovskite material region of the perovskite material bypass diode. Since the binding force of AX in the perovskite lattice is not too high, AX can be released from the perovskite material by heat treatment to form an N-type perovskite material. By heat-treating in an atmosphere of AX, AX can be injected into the perovskite material to form a P-type perovskite material. By treating the exposed portion of the perovskite material layer in the bypass diode region in this way, a PN junction can be manufactured simply and quickly.

[0034] In some embodiments, after forming the perovskite material bypass diode, the method for manufacturing a perovskite solar cell module further includes the step of deepening the isolation groove to form a perovskite solar cell module.

[0035] In some embodiments, the module base includes a substrate, a first electrode layer, and a functional layer that are stacked in sequence. The first electrode layer includes a plurality of electrode blocks that are distributed at intervals on the substrate. The functional layer further includes a first carrier transport layer and a second carrier transport layer. The first carrier transport layer is located between the first electrode layer and the perovskite material layer, and the second carrier transport layer is located on the surface of the perovskite material layer away from the first electrode layer. At this time, according to the design requirements of the perovskite battery, the first carrier transport layer and the second carrier transport layer can be set.

[0036] In some embodiments, the step of providing a module base is providing a substrate having a conductive layer, and opening a first groove penetrating the conductive layer in the substrate and forming a first electrode layer, and forming a functional layer covering the substrate between the electrode blocks of the first electrode layer on the first electrode layer.

[0037] According to the fifth aspect, the present disclosure provides a photovoltaic module. The photovoltaic module includes at least one perovskite solar cell module described in any one of the third aspect or the implementation forms of the third aspect.

[0038] Regarding the beneficial effects of the photovoltaic module according to the fifth aspect, reference may be made to the beneficial effects of the perovskite solar cell module described in any one of the third aspect or the implementation forms of the third aspect, and duplicate descriptions are omitted here.

[0039] The drawings described herein are for further understanding of the present disclosure, form part of the present disclosure, and the exemplary embodiments and their descriptions of the present disclosure are used to interpret the present disclosure and do not unduly limit the present disclosure.

Brief Description of the Drawings

[0040]

Figure 1

Figure 2

Figure 3

Figure 4

Figures 5 - 14

Modes for Carrying Out the Invention

[0041] For the convenience of clearly explaining the technical solutions of the embodiments of the present disclosure, in the embodiments of the present disclosure, words such as "first" and "second" are used to distinguish the same items or similar items with substantially the same functions and effects. A person skilled in the art can understand that words such as "first" and "second" do not limit the number or execution order, and words such as "first" and "second" do not necessarily limit different things.

[0042] In the description of the present disclosure, for the sake of understanding, the orientation or positional relationship indicated by terms such as "upper", "lower", "front", "rear", "left", and "right" is the orientation or positional relationship based on the illustration, and is only for simply explaining and simplifying the description of the present disclosure. It should not be understood that such devices or elements necessarily have a specific orientation or are configured and operated in a specific orientation, nor is it intended to limit the present disclosure.

[0043] In addition, in the present disclosure, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or explanations. It should be understood that any embodiment or design scheme described as "exemplary" or "for example" in the present disclosure is not necessarily more preferable or superior to other embodiments or design schemes. Specifically speaking, the use of words such as "exemplary" or "for example" is intended to present the concept specifically.

[0044] In the present disclosure, "at least one" means one or more, and "a plurality" means two or more. "And / or" describes the relationship of related objects and indicates that three relationships exist. For example, A and / or B indicates the cases where only A exists, both A and B exist, and only B exists, and A and B may be in singular or plural forms. The character " / " generally indicates that the related objects before and after have an "or" relationship. "At least one of the following items" or similar expressions mean any combination of these items and include any combination of one item or a plurality of items. For example, at least one of a, b, or c may indicate a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b, and c, and a, b, c may be one or a plurality.

[0045] To solve the problem that the manufacturing process of a perovskite material bypass diode is complex, an embodiment of the present disclosure provides a method for manufacturing a perovskite material bypass diode. The method for manufacturing the perovskite material bypass diode includes the steps of providing a layer of perovskite material layer, processing the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, thereby forming a perovskite material bypass diode.

[0046] According to the above manufacturing method, in view of the fact that the crystal structure of the perovskite material has the characteristics of a "soft lattice", at a low temperature (300 degrees or less), a P-type perovskite material or an N-type perovskite material can be formed by processes such as simple atmospheric heat treatment and ion diffusion. By heat treatment, the conduction type of the perovskite material can be converted between P-type and N-type. Thereby, by a simple process such as heat treatment, the perovskite material layer can be easily processed to form a P-type perovskite material region and an N-type perovskite material region. At this time, the manufacturing process of the perovskite material bypass diode is simple, the cost is low, the difficulty of manufacturing is greatly reduced, and the industrial application of the perovskite material bypass diode in many applications such as solar power generation, light-emitting diodes, and detectors can be facilitated.

[0047] In addition, when the perovskite material bypass diode is applied to a perovskite solar cell module, the perovskite material bypass diode can be manufactured in situ using the existing perovskite material layer of the perovskite solar cell module. At this time, in the perovskite solar cell module manufactured by the scribing process, one perovskite material bypass diode can be arranged for each perovskite cell, thereby avoiding the hot spot effect and the attenuation of the energy conversion efficiency, and improving the stability and lifespan of the perovskite cell.

[0048] The general formula of the perovskite material in the above perovskite material layer is ABX3, where A is a monovalent cation, B is a divalent cation, and X is a monovalent anion. Specifically, A may be at least one of FA + , MA + or Cs + , B may be at least one of Pb 2+ or Sn 2+ , and X may be at least one of Cl - , Br - or I -It may be at least one of them. At this time, by bringing the P-type perovskite material into contact with the N-type perovskite material, a PN junction can be easily formed.

[0049] The content of AX in the P-type perovskite material region is larger than the content of BX2, and the content of AX in the N-type perovskite material region is smaller than the content of BX2. The ABX3 perovskite material usually consists of AX and BX2. When the content of BX2 is larger than AX, the perovskite material is an N-type perovskite material, and when the content of AX is larger than BX2, the perovskite material is a P-type perovskite material. Based on the material characteristic that it is easy to adjust the ratio of AX to BX2 in the ABX3 perovskite material, by adjusting the ratio of AX to BX2 in the perovskite material, the P-type perovskite material and the N-type perovskite material can be easily manufactured, thereby forming a perovskite material bypass diode 20 having a PN junction.

[0050] The method of providing a single-layer perovskite material layer may be coating, film formation, sputtering, or the like.

[0051] The step of processing the perovskite material layer includes the step of locally heating the perovskite material layer to form an N-type perovskite material region and / or the step of locally heat-treating the perovskite material layer in an AX atmosphere to form a P-type perovskite material region. Both heating and heat treatment in an AX atmosphere are simple process methods. By locally processing the perovskite material layer by these simple process methods, the PN junction structure of the perovskite material bypass diode can be manufactured simply and quickly. The process of processing the perovskite material layer will be described in detail below with reference to a perovskite solar cell module.

[0052] Embodiments of the present disclosure further provide a perovskite material bypass diode obtained by the above manufacturing method. For the beneficial effects of the perovskite material bypass diode, reference may be made to the beneficial effects of the manufacturing method of the perovskite material bypass diode described above, and repeated descriptions are omitted here.

[0053] Embodiments of the present disclosure further provide a perovskite solar cell module. As shown in FIG. 1, the perovskite solar cell module includes a plurality of perovskite cells 10 connected in series and at least one perovskite material bypass diode 20 connected in parallel to the perovskite cells, and is obtained by processing a perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region.

[0054] As can be seen from the above structure, the perovskite solar cell module includes at least one perovskite material bypass diode 20 connected in parallel to the perovskite cell 10. As shown in FIGS. 1 and 2, the dotted lines in the figures indicate the flow directions of photo-generated electrons and photo-generated holes. When the perovskite cell 10 of the perovskite solar cell module can operate normally and perform photoelectric conversion, the perovskite material bypass diode 20 is not turned on, and the photo-generated electrons and photo-generated holes are transported within a plurality of serially connected perovskite cells 10. As shown in FIG. 3, in the perovskite solar cell module, when a failure problem such as deterioration or decomposition occurs in the perovskite material layer 14 (perovskite material) of the perovskite cell 10 connected in parallel to the perovskite material bypass diode 20, the perovskite material bypass diode 20 bypasses the failed perovskite cell 10. At this time, the perovskite material bypass diode 20 connected in parallel to the failed perovskite cell 10 is turned on by being connected in series to the perovskite cells 10 before and after it, and the current (photo-generated electrons and photo-generated holes) of the perovskite solar cell module is transported by the perovskite material bypass diode 20. Thereby, the power loss caused by the current transport by the failed perovskite cell can be avoided, and furthermore, the conversion efficiency of the perovskite solar cell module can be improved.

[0055] Also, since the bypass diode is a perovskite material bypass diode, a PN junction can be easily manufactured using a P-type perovskite material and an N-type perovskite material to form a perovskite material bypass diode. Further, since the material of the perovskite material bypass diode is the same as the material of the perovskite material layer of the perovskite cell, the perovskite material bypass diode can be manufactured simultaneously with the manufacture of the perovskite material layer, or the perovskite material bypass diode can be manufactured using the perovskite material layer.

[0056] Regarding the quantity, the number of the perovskite material bypass diodes 20 may be the same as the number of the perovskite cells 10, and the perovskite material bypass diodes 20 are connected in parallel in a one-to-one correspondence with the perovskite cells 10. At this time, one perovskite material bypass diode 20 can be arranged for each perovskite cell 10 of the perovskite solar cell module. Even if any perovskite cell 10 fails, it can be bypassed by the perovskite material bypass diode 20 connected in parallel thereto, and further the power consumption of the failed perovskite cell 10 can be avoided. Thereby, the entire perovskite solar cell module can be protected from failure.

[0057] Exemplarily, when the perovskite solar cell module includes 10 perovskite cells 10 connected in series, the number of the perovskite material bypass diodes 20 is 10, and one perovskite material bypass diode 20 is connected in parallel for each perovskite cell 10.

[0058] Regarding the material, the general formula of the perovskite material of the perovskite material bypass diode 20 is ABX3, where A is a monovalent cation, B is a divalent cation, and X is a monovalent anion. The content of AX in the P-type perovskite material region of the perovskite material bypass diode 20 is larger than the content of BX2, and the content of AX in the N-type perovskite material region of the perovskite material bypass diode 20 is smaller than the content of BX2. At this time, by adjusting the contents of AX and BX2, the conductivity type of the perovskite material can be easily adjusted, and further the PN junction structure of the perovskite material bypass diode 20 can be easily fabricated.

[0059] As shown in FIGS. 1-4, with respect to the installation position, each perovskite material bypass diode 20 is provided between the positive electrode and the negative electrode of the perovskite battery 10. At this time, the two electrodes of the perovskite material bypass diode 20 can be directly electrically contacted with the two electrodes of the perovskite battery 10 without passing through other structures for connection assistance, thereby simplifying the structure.

[0060] As can be understood, between the positive electrode and the negative electrode of the perovskite battery 10, not only functional structures such as the perovskite material layer 14 are installed, but also the perovskite material bypass diode 20 is installed. That is, between the positive electrode and the negative electrode, the perovskite material bypass diode 20 and the perovskite material layer 14 are installed in parallel.

[0061] With respect to the connection method, the P-type perovskite material region of the perovskite material bypass diode 20 is electrically connected to the negative electrode of the perovskite battery 10, and the N-type perovskite material region of the perovskite material bypass diode 20 is electrically connected to the positive electrode of the perovskite battery 10. At this time, the current direction of the perovskite material bypass diode 20 is the same as the current direction of the perovskite battery 10 connected in parallel to the perovskite material bypass diode 20, and the parallel connection of the perovskite material bypass diode 20 and the perovskite battery 10 can be realized.

[0062] As can be understood, the P-type perovskite material region of the perovskite material bypass diode 20 is the P region of the PN junction of the perovskite material bypass diode 20. The N-type perovskite material region of the perovskite material bypass diode 20 is the N region of the PN junction of the perovskite material bypass diode 20.

[0063] In a specific implementation, the perovskite material bypass diode 20 located between the positive electrode and the negative electrode may have its P-type perovskite material region in electrical contact with the negative electrode, and its N-type perovskite material region in electrical contact with the positive electrode. Of course, the P-type perovskite material region (N-type perovskite material region) of the perovskite material bypass diode 20 may be in electrical contact with the negative electrode (positive electrode) through the carrier transport layer.

[0064] Regarding the shape, the cross-section of the perovskite material bypass diode 20 may be rectangular, triangular, or trapezoidal. At this time, perovskite material bypass diodes 20 with different shapes and sizes can be installed according to the circuit design of the perovskite solar cell module.

[0065] The above cross-section refers to the cross-sectional shape of the perovskite material bypass diode 20 cut perpendicular to the thickness direction of the perovskite battery 10. The cross-section is also the pattern of the orthographic projection of the perovskite material bypass diode 20 on the substrate 11 of the perovskite solar cell module.

[0066] The above perovskite battery 10 may have an N-I-P structure, or the perovskite battery 10 may have a P-I-N structure. Specifically, the perovskite battery 10 may include a substrate 11, a first electrode layer 12, a first carrier transport layer 13, a perovskite material layer 14, a second carrier transport layer 15, and a second electrode layer 16 stacked in sequence. The material of the perovskite material layer 14 is a perovskite material, and the general formula of the perovskite material is ABX3, where A is FA + , MA + or Cs + and at least one of them, B is Pb 2+ or Sn 2+ and at least one of them, X is Cl - , Br - or I -It is at least one of them. In the case of the perovskite solar cell 10 with an N-I-P structure, the first electrode layer 12 is the negative electrode, the second electrode layer 16 is the positive electrode, the first carrier transport layer 13 is the electron transport layer, and the second carrier transport layer 15 is the hole transport layer. In the case of the perovskite solar cell 10 with a P-I-N structure, the first electrode layer 12 is the positive electrode, the second electrode layer 16 is the negative electrode, the first carrier transport layer 13 is the hole transport layer, and the second carrier transport layer 15 is the electron transport layer.

[0067] As shown in FIG. 4, since the material of the perovskite material bypass diode 20 can be the same as the material of the perovskite material layer 14, each perovskite material bypass diode 20 can be manufactured by heat-treating the edge portion of the perovskite material layer 14 of the perovskite solar cell 10. At this time, in the manufacturing process of the perovskite solar cell 10, a part of the region is separated from the perovskite material layer 14, and a perovskite material bypass diode 20 having a PN junction is constructed in this region by post-treatment. This manufacturing method of the perovskite material bypass diode 20 is compatible with the process of the conventional scribing module, and the manufacturing of the perovskite material bypass diode 20 can be realized only by adding some simple steps, and the process is simple. In addition, this method has few improvements to the conventional process, little increase in cost, and is easy for production and application.

[0068] The above-mentioned edge region is a region close to the edge of the perovskite material layer 14 in a top view. The size of the edge portion can be set according to the demand of the perovskite material bypass diode 20. However, the edge portion occupied by the perovskite material bypass diode 20 should be as small as possible in order to ensure the area of the photoelectric conversion region of the perovskite material layer 14. When the manufacturing of the perovskite material bypass diode 20 is completed, the edge portion of the perovskite material layer 14 becomes the perovskite material bypass diode 20, and the remaining portion of the perovskite material layer 14 is the perovskite material layer 14, realizing photoelectric conversion.

[0069] As shown in FIGS. 1-4, the perovskite solar cell module further includes an electrical separation wall 30. The electrical separation wall 30 is provided between the perovskite material bypass diode 20 and the perovskite material layer 14 of the perovskite cell 10, and the material of the electrical separation wall 30 may be a dielectric material, a ceramic insulating material, or an organic insulating material. At this time, the electrical separation wall 30 can well achieve the insulation separation between the perovskite material bypass diode 20 and the perovskite material layer 14, avoid problems such as leakage between the two, and improve the bypass performance of the perovskite material bypass diode 20.

[0070] Along the direction away from the substrate 11, the height of the electrical separation wall 30 is equal to or greater than the thickness of the perovskite material layer 14, and the electrical separation wall 30 can at least prevent the contact between the perovskite material layer 14 and the perovskite material bypass diode 20.

[0071] The embodiments of the present disclosure further provide a method for manufacturing the above perovskite solar cell module. As shown in FIGS. 5-14, the manufacturing method includes the following steps.

[0072] Step S100: As shown in FIG. 5, provide a substrate 11 having a conductive layer. The conductive layer covers the entire substrate 11. The substrate 11 may be glass or the like.

[0073] Step S200: As shown in FIG. 6, a first groove 41 penetrating the conductive layer is formed in the substrate 11, and the first electrode layer 12 is formed. In this process, the conductive layer is divided into a plurality of electrode blocks 121 by the first groove 41. At this time, the first electrode layer 12 includes a plurality of electrode blocks 121 distributed at intervals on the substrate 11. The electrode blocks 121 are electrically separated from each other. Each electrode block 121 is the first electrode layer 12 of the perovskite battery 10. The number of the first grooves 41 coincides with the number of the electrode blocks 121. The width of the first groove 41 may be 10 μm to 100 μm. For example, the width of the first groove 41 may be 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc. However, in the embodiments of the present disclosure, the width of each groove refers to the distance between two side walls of the groove.

[0074] Step S300: As shown in FIG. 7, a functional layer is formed on the first electrode layer 12, and the functional layer covers the substrate 11 between the electrode blocks 121 of the first electrode layer 12. The functional layer includes a perovskite material layer 14, and may further include a first carrier transport layer 13 and a second carrier transport layer 15. The first carrier transport layer 13 is located between the first electrode layer 12 and the perovskite material layer 14, and the second carrier transport layer 15 is located on the surface of the perovskite material layer 14 away from the first electrode layer 12. At this time, according to the design requirements of the perovskite battery 10, the first carrier transport layer 13 and the second carrier transport layer 15 can be installed.

[0075] Taking the example that the functional layer includes the first carrier transport layer 13, the perovskite material layer 14, and the second carrier transport layer 15, the formation method of the functional layer is to sequentially deposit the first carrier transport layer 13, the perovskite material layer 14, and the second carrier transport layer 15 on the first electrode layer 12. At this time, the first carrier transport layer 13 not only covers the electrode blocks 121 of the first electrode layer 12, but also fills the first groove 41. As can be understood, the formation method of each layer included in the functional layer can be selected according to actual production.

[0076] The above three steps can provide a module base for subsequent manufacturing steps. The module base includes a substrate 11, a first electrode layer 12, and a functional layer that are stacked in sequence. The first electrode layer 12 includes a plurality of electrode blocks 121 that are distributed at intervals on the substrate 11, and the functional layer includes at least a perovskite material layer 14.

[0077] Step S400: As shown in FIGS. 8 and 9, a series connection groove 42 is opened in the module base, and at least one electrical separation wall 30 is formed in the module base. Each electrical separation wall 30 is located in the region where the perovskite battery 10 is located, and the functional layer of the perovskite battery 10 is divided into a battery region and a bypass diode region.

[0078] As shown in FIG. 8, the series connection groove 42 is used to fill a second electrode material in a subsequent process, thereby realizing the series connection of adjacent perovskite batteries 10. The series connection groove 42 penetrates the functional layer and does not damage the first electrode layer 12. The width of the series connection groove 42 may be 10 μm to 100 μm, such as 10 μm, 20 μm, 40 μm, 50 μm, 70 μm, 90 μm, 100 μm, etc. The distance between the series connection groove 42 and the first groove 41 may be 5 μm to 50 μm, such as 5 μm, 10 μm, 30 μm, 40 μm, 50 μm, etc.

[0079] The specific steps for forming at least one electrical separation wall 30 in the module base include the following steps.

[0080] As shown in FIG. 8, at least one electrical separation groove 43 is opened in the module base, and the electrical separation groove 43 penetrates the functional layer.

[0081] As shown in FIG. 9, thereafter, an insulating material is filled into the electrical separation groove 43 to form the electrical separation wall 30. The method of filling the insulating material is film formation, vapor deposition or printing. The insulating material may be a dielectric material, a ceramic insulating material or an organic insulating material. At this time, by opening the electrical separation groove 43 and filling the insulating material, the functional layer of the perovskite battery 10 can be easily divided into the bypass diode region and the battery region. Further, the opening of the electrical separation groove 43 and the opening of the series connection groove 42 may be executed synchronously, and the process is simple.

[0082] As shown in FIG. 8, the width of the electrical separation groove 43 may be 5 μm to 50 μm, for example, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, etc. The distance between the electrical separation groove 43 and the series connection groove 42 may be 20 μm to 200 μm, for example, 20 μm, 40 μm, 60 μm, 100 μm, 120 μm, 150 μm, 180 μm, 190 μm, 200 μm, etc. At this time, the electrical separation wall 30 formed by the electrical separation groove 43 has a sufficient width and can exert a good insulation separation effect. Further, there is sufficient space between the electrical separation groove 43 and the series connection groove 42, and it is easy to install the separation groove 440 for dividing the perovskite battery 10.

[0083] As can be understood, in actual applications, each electrode block 121 may be provided with one series connection groove 42 and one electrical separation groove 43. The electrical separation groove 43 may be opened after the series connection groove 42 is opened. The series connection groove 42 may be opened after the electrical separation groove 43 is opened. The series connection groove 42 and the electrical separation groove 43 may be opened simultaneously. Further, in the process of filling the insulating material, the insulating material is filled only into the electrical separation groove 43.

[0084] Step S500: As shown in FIG. 9, a second electrode layer 16 that fills the series connection groove 42 is formed on the module base. By filling the series connection groove 42, the second electrode layer 16 realizes electrical connection with the first electrode layer 12. Further, the second electrode layer 16 covers the surface of the functional layer. The material of the second electrode layer 16 is a material with good conductivity. At this time, the first electrode layer 12 is the positive electrode and the second electrode layer 16 is the negative electrode. Or, the first electrode layer 12 is the negative electrode and the second electrode layer 16 is the positive electrode.

[0085] Step S600: As shown in FIG. 10, a part of the perovskite material layer is exposed. A specific method is to open a separation groove 440 in the second electrode layer 16 to separate adjacent perovskite cells 10. By extending the separation groove 440 into the perovskite material layer 14, a part of each bypass diode region is exposed.

[0086] In the same electrode block 121, the separation groove 440 is located between the series connection groove 42 and the electrical separation wall 30. At this time, the separation groove 440 divides two perovskite cells 10 and separates the series connection groove 42 of the previous perovskite cell 10 from the perovskite material bypass diode 20 of the subsequent perovskite cell 10.

[0087] The depth to which the isolation groove 440 extends into the perovskite material layer 14 is 30% or more and 70% or less of the thickness value of the perovskite material layer 14. The thickness value of the perovskite material layer 14 is the height value of the perovskite material layer 14 located on the first electrode layer 12 and includes the height of the portion of the perovskite material layer 14 that may be located within the first groove 41. Specifically, the depth to which the isolation groove 440 extends into the perovskite material layer 14 is aligned with positions such as 30%, 35%, 40%, 45%, 50%, 56%, 58%, 60%, 65%, 70% of the thickness value of the perovskite material layer 14. At this time, the bypass diode region is divided into two parts, one is exposed, and the other remains blocked by the material at the bottom of the isolation groove 440. These two parts respectively correspond to the P region and the N region of the perovskite material bypass diode 20. When the isolation groove 440 extends to 30% - 70% of the thickness of the perovskite material layer 14, the volume difference between the P region and the N region is small, ensuring the formation of a PN junction with good function and avoiding malfunction due to a large volume difference.

[0088] The width of the isolation groove 440 may be 10 μm to 100 μm, for example, 10 μm, 20 μm, 40 μm, 50 μm, 60 μm, 70 μm, 90 μm, 100 μm, etc.

[0089] Step S700: As shown in FIG. 11, the exposed portion of the perovskite material layer 14 is processed to form a P-type perovskite material region and an N-type perovskite material region, thereby forming the perovskite material bypass diode 20. The exposed portion of the perovskite material layer 14 is the exposed portion of the perovskite material layer 14 in the bypass diode region.

[0090] The material of the perovskite material layer in the bypass diode region is an ABX3 perovskite material, which is composed of AX and BX2 according to a predetermined stoichiometric ratio. Here, A is FA + , MA + or Cs + and may be at least one of the ions, and B is Pb 2+or Sn 2+ It may be at least one of the ions, and X is Cl - , Br - or I - It may be at least one of them.

[0091] The step of treating the exposed portion of the perovskite material layer 14 includes the following steps.

[0092] By increasing the content of AX in the exposed portion of the perovskite material layer 14 in the bypass diode region, the exposed portion of the perovskite material layer 14 in the bypass diode region is converted into a P-type perovskite material. Or, by decreasing the content of AX in the exposed portion of the perovskite material layer 14 in the bypass diode region, the exposed portion of the perovskite material layer 14 in the bypass diode region is converted into an N-type perovskite material. Since the conductivity type of the perovskite material can be adjusted by the ratio of AX to BX2 in the perovskite material, the ratio of AX to BX2 can be easily adjusted by changing the content of AX, thereby forming a PN junction.

[0093] The step of treating the exposed portion of the perovskite material layer 14 includes the step of heating the exposed portion of the perovskite material layer 14 in the bypass diode region to form an N-type perovskite material region of the perovskite material bypass diode 20, or the step of heat-treating the exposed portion of the perovskite material layer 14 in the bypass diode region in an atmosphere 50 of AX to form a P-type perovskite material region of the perovskite material bypass diode 20. Since the binding force of AX in the perovskite lattice is not too high, AX can be released from the perovskite material by heat treatment to form an N-type perovskite material. By heat-treating in an atmosphere 50 of AX, AX can be injected into the perovskite material to form a P-type perovskite material. By treating the exposed portion of the perovskite material layer 14 in the bypass diode region in this way, a PN junction can be manufactured simply and quickly.

[0094] Exemplarily, as shown in FIG. 12, when the perovskite material layer 14 is an N-type perovskite material, a module base having a separation groove 440 is formed and heat-treated in an atmosphere 50 of AX. Then, AX diffuses from the exposed portion of the perovskite material layer 14 in the bypass diode region and is injected into the upper half of the perovskite material. The exposed perovskite material in the upper half becomes a P-type perovskite material, thereby forming a PN junction of the perovskite material bypass diode 20 in FIG. 12. At this time, the upper side of the formed perovskite material bypass diode 20 is the P region, and the lower side is the N region. Such a perovskite material bypass diode 20 can be manufactured in the perovskite solar cell 10 having a P-I-N structure.

[0095] Exemplarily, as shown in FIG. 13, when the perovskite material layer 14 is a P-type perovskite material, after forming the separation groove 440, by heat-treating the exposed portion of the perovskite material layer 14 in the bypass diode region, a part of AX in the exposed portion of the perovskite material layer 14 in the bypass diode region is released from the perovskite material. After the heat treatment, the upper half of the perovskite material in the bypass diode region is converted into an N-type perovskite material, thereby forming a PN junction of the perovskite material bypass diode 20 shown in FIG. 13. At this time, the upper side of the formed perovskite material bypass diode 20 is the N region, and the lower side is the P region. Such a perovskite material bypass diode 20 can be manufactured in the perovskite solar cell 10 having an N-I-P structure.

[0096] Step S800: As shown in FIG. 14, the separation groove 440 is deepened to form a second groove 44 from the separation groove 440, thereby forming a perovskite solar cell module. The second groove 44 formed by deepening the separation groove 440 penetrates the second electrode layer 16 and the functional layer without destroying the first electrode layer 12. At this time, the perovskite material bypass diodes 20 are connected in parallel in a one-to-one correspondence with the perovskite solar cells 10 of the perovskite solar cell module.

[0097] The methods for opening the first groove 41, the series connection groove 42, the electrical separation groove 43, the separation groove 440, and deepening the separation groove 440 are selected from chemical etching, laser scribing, or mechanical scribing.

[0098] As described above, in the embodiments of the present disclosure, in the manufacturing process of the perovskite material bypass diode 20, the process of opening the electrical separation groove 43 and the process of opening the series connection groove 42 in the conventional process may be performed simultaneously using the same process. The filling process of the insulating material has high compatibility with the forming process of the second electrode layer 16. Thereby, on the one hand, the process can be simplified and the manufacturing difficulty can be reduced. On the other hand, there are few improvements to the conventional process, the improvement cost can be reduced, and production and application are easy. In the implementation of the present disclosure, the second groove 44 that was conventionally opened in one go is formed in two steps. First, a separation groove 440 extending inside the perovskite material layer 14 is opened, and then the separation groove 440 is deepened. In this process, the perovskite material bypass diode 20 is divided into two parts using the separation groove 440, whereby only a part of the perovskite material bypass diode 20 can be processed to form a perovskite material bypass diode 20 having a PN junction. Further, opening the second groove 44 in two steps does not affect the second groove 44 and the perovskite solar cell module. In this way, the method of forming the perovskite material bypass diode 20 can be well combined with the conventional scribing series connection process, and the perovskite material bypass diode 20 can be formed only by slightly improving the original step of forming the second groove 44. In this case, the manufacturing process is simple, the manufacturing difficulty is low, production and application are easy, and the improvement cost of the conventional process is small.

[0099] The embodiments of the present disclosure further provide a solar power generation module. The solar power generation module includes at least one of the above perovskite solar cell modules.

[0100] Specifically, the photovoltaic module may electrically connect a plurality of perovskite solar cell modules to one substrate. The photovoltaic module may also be a photovoltaic module formed by connecting a plurality of perovskite solar cell modules in series and parallel by welding strips.

[0101] To further explain the perovskite solar cell module, the present disclosure further provides specific examples of the perovskite solar cell module and its manufacturing method.

[0102] <Example 1> In this example, ITO conductive glass with a length, width, and thickness of 600 mm × 600 mm × 2.2 mm was used as the substrate to manufacture a perovskite solar cell module.

[0103] In step 1, a first groove was formed in the ITO conductive glass. Using the laser etching method, first grooves with a width of 50 μm were opened every 10 mm on the conductive surface of the ITO conductive glass to form a first electrode layer.

[0104] In step 2, a TiO2 electron transport layer (thickness 50 nm), a P-type FAPbI3 perovskite material layer (thickness 1000 nm), and a Spiro-OMeTAD hole transport layer (thickness 150 nm) were manufactured on the substrate having the first groove.

[0105] In step 3, series connection grooves (width 50 μm) and electrical separation grooves (width 20 μm) were opened using the laser etching method. The distance between the series connection grooves and the first groove was 10 μm, and the distance between the electrical separation grooves and the series connection grooves was 50 μm. Then, the ZrO2 insulating material was filled in the electrical separation grooves.

[0106] In step 4, after filling the insulating material, a 100-nm-thick Au gold thin film was manufactured as the second electrode layer. Then, separation grooves were opened using the laser etching method.

[0107] In Step 5, the substrate with a separation groove was heated at 80°C for 5 h in an inert atmosphere, a part of the FAI in the exposed portion of the perovskite material layer in the bypass diode region was released from the perovskite material, and an N-type region of the perovskite material bypass diode was formed in the upper half, obtaining a perovskite material bypass diode.

[0108] In Step 6, the depth of the separation groove was etched from the internal position of the perovskite material layer to the boundary position between the ITO layer and the electron transport layer using a laser etching method, and the manufacturing of the perovskite solar cell module was completed.

[0109] <Example 2> In this example, ITO conductive glass with a length, width, and thickness of 600 mm × 600 mm × 2.2 mm was used as a substrate to manufacture a perovskite solar cell module.

[0110] In Step 1, a first groove was formed in the ITO conductive glass. Using a laser etching method, first grooves with a width of 50 μm were opened on the conductive surface of the ITO conductive glass at intervals of 10 mm, and a first electrode layer was formed.

[0111] In Step 2, a PC 61 BM hole transport layer (thickness 150 nm), P-type FAPbI3 perovskite material layer (thickness 1000 nm), and NiO electron transport layer (thickness 50 nm) were manufactured.

[0112] In Step 3, series connection grooves (width 50 μm) and electrical separation grooves (width 20 μm) were opened using a laser etching method. The distance between the series connection grooves and the first groove was 10 μm, and the distance between the electrical separation grooves and the series connection grooves was 50 μm. Then, the ZrO2 insulating material was filled in the electrical separation grooves.

[0113] In Step 4, after filling the insulating material, an Au gold thin film with a thickness of 100 nm was manufactured as the second electrode layer. Then, a separation groove was opened using a laser etching method.

[0114] In step 5, the substrate with a separation groove is heated at 80°C for 5 h in an FAI atmosphere. During the heating process, FAI is injected into the exposed portion of the perovskite material layer in the bypass diode region, and a P-type region of the perovskite material bypass diode is formed in the upper half, obtaining a perovskite material bypass diode.

[0115] In step 6, the laser etching method is used to etch the depth of the separation groove from the internal position of the perovskite material layer to the boundary position between the ITO layer and the electron transport layer, completing the manufacture of the perovskite solar cell module.

[0116] The perovskite solar cell modules manufactured in Example 1 and Example 2 were tested. During the test process, the perovskite material in the perovskite material layer of one perovskite cell was destroyed to cause a failure. Then, its conversion efficiency was tested and compared with a perovskite solar cell module without a perovskite material bypass diode. The results showed that the conversion efficiency of the perovskite solar cell modules manufactured in Example 1 and Example 2 of the present disclosure was significantly higher than that of the perovskite solar cell modules without a perovskite material bypass diode.

[0117] Here, the present disclosure has been described with reference to each example. However, during the process of implementing the present disclosure to be protected, those skilled in the art can understand and realize other changes of the disclosed examples by reading the drawings, the content of the disclosure, and the appended patent claims. In the claims, the term "comprising" does not exclude other components or steps, and "a" or "one" does not exclude the case of a plurality. Although several measures are described in different dependent claims, it does not mean that these measures cannot be combined to produce good results.

[0118] The present disclosure has been described with reference to specific features and their embodiments. However, it is obvious that various changes and combinations can be made without departing from the spirit and scope of the present disclosure. Therefore, this specification and the drawings are merely exemplary descriptions of the present disclosure defined in the appended claims, and are considered to cover any and all changes, modifications, combinations, or equivalents within the scope of the present disclosure. Obviously, those skilled in the art can make various changes and modifications to the present disclosure without departing from the spirit and scope of the present disclosure. Thus, if these changes and modifications of the present disclosure belong to the scope of the claims of the present disclosure and its equivalent technical scope, the present disclosure is intended to include these changes and modifications as well.

Explanation of Reference Numerals

[0119] In FIGS. 1 - 14, 10 - perovskite battery, 11 - substrate, 12 - first electrode layer, 121 - electrode block, 13 - first carrier transport layer, 14 - perovskite material layer, 15 - second carrier transport layer, 16 - second electrode layer, 20 - perovskite material bypass diode, 30 - electrical separation wall, 41 - first groove, 42 - series connection groove, 43 - electrical separation groove, 440 - separation groove, 44 - second groove, 50 - AX atmosphere.

Claims

1. Providing a single-layer perovskite material layer, processing the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, thereby forming a perovskite material bypass diode, wherein the perovskite material layer is used in a perovskite solar cell, and the perovskite material bypass diode is connected in parallel to the perovskite solar cell. A method for manufacturing a perovskite material bypass diode, characterized in that.

2. The general formula of the perovskite material of the perovskite material layer is ABX ３ where A is a monovalent cation, B is a divalent cation, and X is a monovalent anion, The content of AX in the P-type perovskite material region is greater than the content of BX ２ The content of AX in the N-type perovskite material region is smaller than the content of BX ２ The method for manufacturing a perovskite material bypass diode according to claim 1, characterized in that.

3. The step of processing the perovskite material layer is Heating a local portion of the perovskite material layer to form the N-type perovskite material region, and / or Heat-treating a local portion of the perovskite material layer in an atmosphere of AX to form a P-type perovskite material region. The method for manufacturing a perovskite material bypass diode according to claim 1 or 2, characterized in that it includes.

4. Including a plurality of perovskite solar cells connected in series and at least one perovskite material bypass diode connected in parallel to the perovskite solar cell, wherein the perovskite material bypass diode is obtained by processing a perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region. A perovskite solar cell module, characterized in that.

5. The number of the perovskite material bypass diodes is the same as the number of the perovskite cells, and the perovskite material bypass diodes are connected in parallel in a one-to-one correspondence with the perovskite cells. The perovskite solar cell module according to claim 4, characterized in that.

6. The general formula of the perovskite material of the perovskite material bypass diode is ABX ３ where A is a monovalent cation, B is a divalent cation, and X is a monovalent anion. The content of AX in the P-type perovskite material region of the perovskite material bypass diode is greater than the content of BX, and the content of AX in the N-type perovskite material region of the perovskite material bypass diode is less than the content of BX. The perovskite solar cell module according to claim 4, characterized in that. ２ The content of AX in the P-type perovskite material region of the perovskite material bypass diode is greater than the content of BX, and the content of AX in the N-type perovskite material region of the perovskite material bypass diode is less than the content of BX. The perovskite solar cell module according to claim 4, characterized in that. ２ The perovskite solar cell module according to claim 4, characterized in that.

7. Each of the perovskite material bypass diodes is provided between the positive electrode and the negative electrode of the perovskite cell. The P-type perovskite material region of the perovskite material bypass diode is electrically connected to the negative electrode of the perovskite cell, and the N-type perovskite material region of the perovskite material bypass diode is electrically connected to the positive electrode of the perovskite cell. And / or, the cross section of the perovskite material bypass diode is rectangular, triangular or trapezoidal. The perovskite solar cell module according to claim 4, characterized in that.

8. The perovskite solar cell module further includes an electrical separation wall provided between the perovskite material bypass diode and the perovskite material layer of the perovskite cell, and the material of the electrical separation wall includes any one of a dielectric material, a ceramic insulating material, or an organic insulating material. The perovskite solar cell module according to any one of claims 4 to 7, characterized in that.

9. Providing a module base, wherein the module base includes a functional layer, and the functional layer includes a perovskite material layer; Exposing a part of the perovskite material layer, processing the exposed part of the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, thereby forming a perovskite material bypass diode; Connecting the perovskite material bypass diode in parallel to the perovskite battery of the perovskite solar cell module. A method for manufacturing a perovskite solar cell module, characterized by comprising the above steps.

10. The method for manufacturing a perovskite solar cell module according to claim 9, wherein the perovskite material bypass diode is connected in parallel to the perovskite battery of the perovskite solar cell module in a one-to-one correspondence.

11. After providing the module base and before exposing a part of the perovskite material layer, the method for manufacturing the perovskite solar cell module further includes: opening a series connection groove in the module base; forming at least one electrical separation wall in the module base; each of the electrical separation walls is located in the region where the perovskite battery is located, and dividing the functional layer of the perovskite battery into a battery region and a bypass diode region; and then forming a second electrode layer for filling the series connection groove in the module base. The step of exposing a part of the perovskite material layer includes opening a separation groove for separating adjacent perovskite batteries in the second electrode layer, and the separation groove extends into the interior of the perovskite material layer, thereby exposing a part of the perovskite material layer in each bypass diode region. The method for manufacturing a perovskite solar cell module according to claim 9, characterized by comprising the above steps.

12. The step of forming at least one electrical separation wall in the module base includes The step of opening at least one electrical separation groove penetrating the functional layer on the module base; The step of filling the electrical separation groove with an insulating material to form an electrical separation wall, including; The filling method of the insulating material is film formation, vapor deposition or printing; The method for manufacturing a perovskite solar cell module according to claim 11, wherein the method for opening the series connection groove and the method for opening the electrical separation groove are both selected from chemical etching, laser scribing or mechanical scribing.

13. The width of the series connection groove is 10 μm to 100 μm, the width of the electrical separation groove is 5 μm to 50 μm, and the distance between the electrical separation groove and the series connection groove is 20 μm to 200 μm. The method for manufacturing a perovskite solar cell module according to claim 12, characterized in that.

14. In the same electrode block, the separation groove is located between the series connection groove and the electrical separation wall, and / or; The depth at which the separation groove extends into the perovskite material layer is 30% or more and 70% or less of the thickness value of the perovskite material layer; And / or, the width of the separation groove is 10 μm to 100 μm. The method for manufacturing a perovskite solar cell module according to any one of claims 11 to 13, characterized in that.

15. The exposed portion of the perovskite material layer is the exposed portion of the perovskite material layer in the bypass diode region; The step of processing the exposed portion of the perovskite material layer; Including the step of increasing the content of AX in the exposed portion of the perovskite material layer in the bypass diode region, or the step of decreasing the content of AX in the exposed portion of the perovskite material layer in the bypass diode region. The method for manufacturing a perovskite solar cell module according to any one of claims 11 to 13, characterized in that.

16. The step of treating the exposed portion of the perovskite material layer is heating the exposed portion of the perovskite material layer in the bypass diode region to form an N-type perovskite material region of the perovskite material bypass diode, or heat-treating the exposed portion of the perovskite material layer in the bypass diode region in an atmosphere of AX to form a P-type perovskite material region of the perovskite material bypass diode, the method for manufacturing a perovskite solar cell module according to claim 15, characterized in that it comprises the steps of

17. After forming the perovskite material bypass diode, the method for manufacturing a perovskite solar cell module according to any one of claims 11 to 13, further comprising the step of deepening the separation groove to form a perovskite solar cell module.

18. The module base includes a substrate, a first electrode layer, and a functional layer that are stacked in sequence, and the first electrode layer includes a plurality of electrode blocks that are distributed at intervals on the substrate. The functional layer further includes a first carrier transport layer and a second carrier transport layer. The first carrier transport layer is located between the first electrode layer and the perovskite material layer, and the second carrier transport layer is located on a surface of the perovskite material layer away from the first electrode layer. The method for manufacturing a perovskite solar cell module according to any one of claims 11 to 13, characterized in that

19. The step of providing a module base is providing a substrate having a conductive layer; opening a first groove penetrating the conductive layer in the substrate to form a first electrode layer; forming the functional layer on the first electrode layer to cover the electrode blocks of the first electrode layer and the substrate between the electrode blocks. The method for manufacturing a perovskite solar cell module according to claim 18, characterized in that it comprises the steps of

20. A photovoltaic power generation module comprising at least one perovskite solar cell module according to any one of claims 4 to 8.

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