Film forming system and film forming method

Abstract

To control the thickness of a film to be formed on a substrate with accuracy.SOLUTION: A deposition system comprises a deposition device, a measurement device, and a control device. The deposition device has a processing container, a stage, a structure, and a window. The structure is provided in the processing container, having a recess. The window is provided on a wall surface of the processing container and formed by a member transmitting light. The measurement device has a light-emission part, a light-reception part, and a measurement part. The light-emission part emits light with a plurality of wavelengths to the structure via the window. The light-reception part receives light for each wavelength reflected from the structure via the window. The measurement part measures a reflective index of light for each wavelength in the structure on the basis of an intensity of the light emitted to the structure and an intensity of the light reflected from the structure. The control device has an estimation part and a control part. The estimation part estimates a thickness of a film formed on the substrate on the basis of the reflective index of light for each wavelength in the structure. The control part stops forming the film onto the substrate in a case where the estimated thickness of the film reaches a predetermined thickness.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Various aspects and embodiments of the present disclosure relate to a film forming system and a film forming method.

Background Art

[0002] For example, Patent Document 1 below discloses that in a plasma processing apparatus that performs etching, a window portion for monitoring made of a transparent body such as quartz glass is provided on the ceiling of the processing chamber. In this plasma processing apparatus, in the deposition process before etching, light is irradiated into the processing chamber from the window portion, and the end timing of the deposition process is determined according to the change in the intensity of the reflected light from the deposits adhering to the inside of the window portion. Thereby, a deposit having an appropriate thickness can be deposited in the opening of the resist pattern, and the dimensions of the convex portions of the resist pattern can be accurately adjusted.

[0003] Further, Patent Document 2 below discloses a technique for measuring the film thickness by irradiating visible light onto the surface of a substrate and using the reflection spectrum signal of the reflected light detected by a condensing probe.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a film forming system and a film forming method capable of accurately controlling the thickness of a film formed on a substrate.

Means for Solving the Problems

[0006] One aspect of the present disclosure is a film forming system, comprising: a film forming apparatus for forming a film on a substrate; a measuring apparatus for measuring the reflectance of light for each wavelength in a film formed at a predetermined position in the film forming apparatus; and a control apparatus for controlling the film forming apparatus and the measuring apparatus. The film forming apparatus includes a processing container, a stage, a structure, and a window. The stage is provided in the processing container and on which the substrate is placed. The structure is provided in the processing container and has a recess. The window is provided on the wall surface of the processing container and is formed of a member that transmits light. The measuring apparatus includes a light emitting unit, a light receiving unit, and a measuring unit. The light emitting unit irradiates the structure with light of a plurality of wavelengths through the window. The light receiving unit receives the light for each wavelength reflected from the structure through the window. The measuring unit measures the reflectance of light for each wavelength in the structure based on the intensity of the light irradiated on the structure and the intensity of the light reflected from the structure. The control apparatus includes an estimating unit and a control unit. The estimating unit estimates the thickness of the film formed on the substrate based on the reflectance of light for each wavelength in the structure. The control unit stops the film formation on the substrate when the estimated thickness of the film reaches a predetermined thickness.

Advantages of the Invention

[0007] According to various aspects and embodiments of the present disclosure, the thickness of the film formed on the substrate can be accurately controlled.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments of the disclosed film forming system and film forming method will be described in detail with reference to the drawings. Note that the disclosed film forming system and film forming method are not limited by the following embodiments.

[0010] By the way, the thickness of the film formed on the substrate may vary due to the influence of the pressure in the film forming apparatus, the temperature of the substrate, and the like. In addition, with the miniaturization of semiconductor devices in recent years, the thickness of the film formed on the substrate tends to decrease. When the thickness of the film formed on the substrate decreases, the influence of the film thickness variation due to a slight change in the state in the film forming apparatus becomes large. Therefore, it is difficult to accurately control the thickness of the film formed on the substrate.

[0011] In addition, if the thickness of the film formed on the substrate can be measured in real time, it is possible to control the thickness of the film formed on the substrate even when the state in the film forming apparatus changes. However, in the technology of the above-mentioned patent document, when the film thickness becomes small, the measurement accuracy of the film thickness decreases. Therefore, it is difficult to accurately measure the thickness of the thin film formed on the substrate.

[0012] Therefore, the present disclosure provides a technique capable of accurately controlling the thickness of the film formed on the substrate.

[0013] [Configuration of Film Forming System 10] FIG. 1 is a schematic diagram showing an example of a film forming system 10 in one embodiment. The film forming system 10 includes a control device 100, a measurement device 200, and a film forming device 300. The film forming device 300 forms a film on a substrate W. The measurement device 200 measures the reflectance of light for each wavelength of a film formed at a predetermined position in the film forming device 300. The control device 100 controls the measurement device 200 and the film forming device 300.

[0014] The film forming device 300 includes a processing container 301, an exhaust device 302, a shower head 306, and a stage 307. In the present embodiment, the film forming device 300 is, for example, a CVD (Chemical Vapor Deposition) device. A shower head 306 is provided above the processing container 301. Two types of raw material monomers are supplied to the processing container 301 via the shower head 306. The two types of raw material monomers are, for example, isocyanate and amine. A raw material supply source 303a for accommodating isocyanate in a liquid state is connected to the shower head 306 via a pipe 304a. Further, a raw material supply source 303b for accommodating amine in a liquid state is connected to the shower head 306 via a pipe 304b.

[0015] The liquid isocyanate supplied from the raw material supply source 303a is vaporized by a vaporizer 305a interposed in the pipe 304a. The vaporized isocyanate vapor is introduced into the shower head 306 via the pipe 304a. Also, the liquid amine supplied from the raw material supply source 303b is vaporized by a vaporizer 305b interposed in the pipe 304b. The vaporized amine vapor is introduced into the shower head 306.

[0016] A large number of discharge holes are formed on the lower surface of the shower head 306. The shower head 306 discharges the isocyanate vapor introduced via the pipe 304a and the amine vapor introduced via the pipe 304b into the processing container 301 in a shower-like manner from separate discharge holes. The shower head 306 is an example of a gas supply unit.

[0017] The exhaust device 302 exhausts the gas inside the processing container 301. The inside of the processing container 301 is controlled to a predetermined pressure by the exhaust device 302. The exhaust device 302 is controlled by the control device 100.

[0018] Inside the processing container 301, a stage 307 on which the substrate W is placed is provided. The stage 307 is provided with a heater 308a for adjusting the temperature of the substrate W. The control device 100 controls the temperature of the substrate W so that the upper surface of the substrate W becomes a temperature suitable for vapor deposition polymerization of the raw material monomers by controlling the heater 308a. The temperature suitable for vapor deposition polymerization of the raw material monomers can be determined according to the type of the raw material monomers, and can be, for example, 40°C to 200°C.

[0019] By causing a vapor deposition polymerization reaction of two types of raw material monomers on the surface of the substrate W using such a film forming apparatus 300, an organic material is laminated on the surface of the substrate W. When the two types of raw material monomers are isocyanate and amine, a film of a polymer having a urea bond is formed on the surface of the substrate W.

[0020] Further, inside the processing container 301, a monitor part 310 having a recess is provided. The monitor part 310 is an example of a structure having a recess. In the present embodiment, the monitor part 310 is disposed on the upper surface of the stage 307, outside the region where the substrate W is disposed, with the recess of the monitor part 310 facing upward.

[0021] FIG. 2 is a cross-sectional view showing an example of the monitor part 310. A plurality of recesses 311 are formed in the monitor part 310. In each recess 311, the depth D1 is, for example, 20 nm or more, and the width W1 of the opening is determined according to the film thickness of the polymer formed on the substrate W. The width W1 of the opening is, for example, a width that is not more than twice the film thickness of the polymer film formed on the substrate W. When the film thickness of the polymer film formed on the substrate W is, for example, 10 nm, the width W1 of the opening is set to, for example, 20 nm or less. Further, when the film thickness of the polymer film formed on the substrate W is, for example, 5 nm, the width W1 of the opening is set to, for example, 10 nm or less. In the present embodiment, a polymer film with a thickness of 10 nm is formed on the substrate W, the depth D1 of each recess 311 is, for example, 20 nm, and the width W1 of the opening is, for example, 20 nm.

[0022] A heater 308b for heating the monitor part 310 is provided in the processing container 301 below the monitor part 310. The control device 100 controls the temperature of the monitor part 310 by controlling the heater 308b. For example, in the film formation process, the control device 100 controls the heater 308b so that the monitor part 310 and the substrate W have the same temperature. Further, for example, in the cleaning inside the processing container 301, the control device 100 controls the heater 308b so that the temperature of the monitor part 310 is higher than the temperature in the film formation process. The temperature higher than the temperature in the film formation process is, for example, a temperature of 300°C or higher. Thereby, the film formed in the recess 311 of the monitor part 310 can be efficiently removed.

[0023] Also, a window 309 is provided on the wall surface above the monitor part 310 and at a position facing the monitor part 310. The window 309 is formed of a member that transmits light, such as quartz. A heater 308c and a heater 308d for heating the monitor part 310 are provided around the window 309. The control device 100 controls the temperature of the window 309 by controlling the heater 308c and the heater 308d. A measuring device 200 is connected to the window 309 via an optical fiber 205.

[0024] For example, in the film formation process, the control device 100 controls the heaters 308c and 308d so that the temperature of the window 309 becomes a temperature at which reaction by-products (so-called deposits) are less likely to adhere. Thereby, it is possible to suppress the adhesion of deposits to the window 309. Further, for example, in the cleaning inside the processing vessel 301, the control device 100 controls the heaters 308c and 308d so that the temperature of the window 309 becomes a temperature at which deposits are less likely to adhere. Thereby, the deposits adhering to the window 309 can be efficiently removed. In the film formation process using an amine and an isocyanate, the temperature at which deposits are less likely to adhere is, for example, a temperature of 300°C or higher.

[0025] The measuring device 200 includes a light emitting unit 201, a light receiving unit 202, and a measuring unit 203. The light emitting unit 201 outputs light of a plurality of wavelengths to the optical fiber 205 at an intensity instructed by the measuring unit 203. The light output to the optical fiber 205 is irradiated into the processing vessel 301 through the window 309 and reflected on the surface of the monitor part 310 in which a plurality of recesses 311 are formed. In the present embodiment, the light irradiated into the processing vessel 301 through the window 309 is reflected on the monitor part 310 at the surfaces of the plurality of recesses 311 and the monitor part 310 around the plurality of recesses 311. The light reflected from the monitor part 310 is input into the measuring device 200 through the window 309 and the optical fiber 205.

[0026] The light receiving unit 202 receives the light input into the measuring device 200 through the optical fiber 205. Then, the light receiving unit 202 outputs an electrical signal corresponding to the intensity of the received light to the measuring unit 203 for each wavelength of the light. The measuring unit 203 measures the reflectance of light at the monitor part 310 for each wavelength based on the intensity of the light irradiated to the monitor part 310 and the intensity of the light reflected from the processing vessel 301. Then, the measuring unit 203 outputs data on the distribution of the reflectance of light for each measured wavelength to the control device 100.

[0027] FIG. 3 is a block diagram showing an example of the functional configuration of the control device 100. The control device 100 includes a database (DB) 101, an estimation unit 102, and a control unit 103. In the DB 101, waveform data 1010 as shown in FIG. 4, for example, is stored in advance. In the waveform data 1010, data of the reflectance distribution of light for each wavelength observed from the reflected wave from the monitor part 310 when a film of that thickness is formed on the surface of the monitor part 310 around the recess 311 is stored in advance in association with the thickness of the film formed on the surface of the monitor part 310. Also, in the DB 101, data necessary for film formation processing such as recipes and cleaning in the processing container 301 is stored in advance. The data necessary for film formation processing includes data on the thickness of the film formed on the substrate W.

[0028] The estimation unit 102 estimates the thickness of the film formed on the substrate W based on the reflectance of light for each wavelength measured by the measuring device 200. For example, the estimation unit 102 refers to the waveform data 1010 stored in advance in the DB 101, and estimates the thickness of the film associated with the distribution having the highest similarity to the distribution of the reflectance of light for each wavelength measured by the measuring device 200 as the thickness of the film formed on the substrate W.

[0029] Here, when film formation is performed in the processing container 301, a film is formed on the side wall and the bottom wall of the recess 311 of the monitor part 310. At this time, at the boundary between the side wall and the bottom wall of the recess 311, the film grows in the lateral direction and the upward direction as shown in FIG. 5, for example. As a result, the thickness of the film at the boundary between the side wall and the bottom wall of the recess 311 becomes thicker than the thickness of the film formed on the upper part and the side wall of the recess 311. And when the width of the recess 311 is narrow, the thickness Th2 of the film formed on the bottom of the recess 311 becomes thicker than the thickness Th1 of the film formed on the upper part and the side wall of the recess 311 as shown in FIG. 5, for example.

[0030] In a method of measuring film thickness using light interference, when the film thickness is small, the measurement accuracy of the film thickness decreases. However, by using a monitor part 310 having a structure as shown in FIG. 5, for example, in a state where a film 40 having a thickness Th1 is formed, based on the distribution of the reflectance of light for each wavelength in a film 40 having a thickness Th2 greater than the thickness Th1, the thickness of the film can be estimated.

[0031] For example, as shown in FIG. 6, for each thickness Th1 of the film 40 formed around the recess 311, the distribution of the reflectance of light for each wavelength is measured in advance. Then, after the distribution of the reflectance of light for each wavelength is measured, the monitor part 310 is carried out, and the thickness Th1 of the film 40 formed on the upper part of the recess 311 is measured using, for example, a scanning electron microscope or the like. Thereby, for each thickness Th1 of the film 40 formed on the upper part of the recess 311, data on the distribution of the reflectance of light for each wavelength is collected and stored in advance in the DB101 as waveform data 1010. When a film formation process is performed on the substrate W, the thickness Th1 of the film 40 formed on the monitor part 310 disposed on the stage 307 adjacent to the substrate W can be regarded as the thickness of the film 40 formed on the substrate W.

[0032] The estimation unit 102 refers to the waveform data 1010 stored in advance in the DB101 in the film formation process, and specifies data on the distribution of the reflectance of light for each wavelength that becomes the distribution closest to the distribution of the reflectance of light for each wavelength measured by the measuring device 200. Then, the estimation unit 102 estimates the thickness of the film associated with the specified data on the distribution of the reflectance of light for each wavelength as the thickness of the film formed on the substrate W. Then, the estimation unit 102 outputs information indicating the estimated film thickness to the control unit 103.

[0033] Incidentally, the estimation unit 102 may estimate the thickness of the film formed on the substrate W based on the similarity between the distribution of the reflectance of light for each wavelength measured by the measuring device 200 and the distribution of the reflectance of light for each wavelength stored in advance in the DB 1011. For example, regarding the distribution of the reflectance of light for each wavelength measured by the measuring device 200, consider a case where the similarity with the distribution of the reflectance of light for each wavelength associated with a film thickness of 1 nm is 20, and the similarity with the distribution of the reflectance of light for each wavelength associated with a film thickness of 2 nm is 80. Here, it is assumed that the higher the similarity value, the higher the degree of similarity. In this case, the estimation unit 102 estimates the thickness of the film formed on the substrate W to be, for example, 1 nm × 20 / (20 + 80) + 2 nm × 80 / (20 + 80) = 1.8 nm.

[0034] When executing the film formation process, the control unit 103 refers to the data necessary for the film formation process stored in advance in the DB 101 and controls each part of the film forming apparatus 300. Further, when the thickness of the film estimated by the estimation unit 102 reaches a predetermined thickness, the control unit 103 controls each part of the film forming apparatus 300 to stop the formation of the film on the substrate W. Thereby, a film having a desired thickness can be formed on the substrate W.

[0035] [Film Formation Method] FIG. 7 is a flowchart showing an example of the film formation method. The film formation method illustrated in FIG. 7 is realized, for example, when the control device 100 controls the measuring device 200 and the film forming apparatus 300.

[0036] First, a substrate W is carried into a processing chamber 301 of a film forming apparatus 300 by a transfer device (not shown) and placed on a stage 307 (S10). Then, a film forming process is started (S11). Step S11 is an example of step a). In step S11, the temperature of the substrate W is controlled by a heater 308a in the stage 307 to be a temperature suitable for film formation (for example, 40°C to 200°C). Also, the temperature of the monitor part 310 is controlled by a heater 308b in the stage 307 to be the same temperature as that of the substrate W. Further, the temperature of the window 309 is controlled by heaters 308c and 308d to be a temperature at which deposition hardly adheres (for example, 300°C or higher). Then, vapors of two types of monomers are supplied into the processing chamber 301 from a shower head 306, and the gas in the processing chamber 301 is exhausted by an exhaust device 302. Thereby, a polymer film is formed on the substrate W by a vapor phase polymerization reaction of the two types of monomers.

[0037] Next, the measuring device 200 measures the distribution of the reflectance of light for each wavelength by irradiating the monitor part 310 with light of a plurality of wavelengths through an optical fiber 205 and a window 309 (S12). Step S12 is an example of step b). In step S12, the light emitting part 201 outputs light of a plurality of wavelengths to the optical fiber 205 at an intensity instructed from the measuring part 203. The light output to the optical fiber 205 is irradiated into the processing chamber 301 through the window 309 and reflected by the surface of the monitor part 310 in which the recess 311 is formed. The light reflected from the monitor part 310 is received by a light receiving part 202 through the window 309 and the optical fiber 205. The light receiving part 202 outputs an electrical signal corresponding to the intensity of the received light to the measuring part 203 for each wavelength of the light. The measuring part 203 measures the reflectance of light at the monitor part 310 for each wavelength of the light based on the intensity of the light irradiated to the monitor part 310 and the intensity of the light reflected from the processing chamber 301. Then, the measuring part 203 outputs data on the distribution of the reflectance of light for each measured wavelength of the light to the control device 100.

[0038] Next, the estimation unit 102 of the control device 100 refers to the waveform data 1010 stored in advance in the DB 101, and identifies the reflectance distribution having the highest similarity to the distribution of the reflectance of light for each wavelength measured by the measuring device 200 (S13). Then, the estimation unit 102 refers to the waveform data 1010, and estimates the thickness of the film associated with the identified reflectance distribution as the thickness of the film formed on the substrate W (S14). Steps S13 and S14 are an example of step c). Then, the estimation unit 102 outputs information indicating the estimated film thickness to the control unit 103.

[0039] Next, the control unit 103 of the control device 100 determines whether or not the film thickness estimated by the estimation unit 102 has reached a predetermined thickness (S15). If the film thickness estimated by the estimation unit 102 has not reached the predetermined thickness (S15: No), the process shown in step S12 is executed again.

[0040] On the other hand, if the film thickness estimated by the estimation unit 102 has reached the predetermined thickness (S15: Yes), the control unit 103 controls each part of the film forming apparatus 300 to terminate the film forming process (S16). Step S16 is an example of step d). Then, the substrate W is carried out from the inside of the processing container 301 by a transfer device (not shown).

[0041] Next, the inside of the processing container 301 is cleaned (S17). In step S17, the temperature of the monitor part 310 is controlled by the heater 308b to be higher than the temperature in the film forming process (for example, 300°C or higher). Also, in step S17, the temperature of the window 309 is controlled by the heaters 308c and 308d to be a temperature at which deposition is difficult to adhere (for example, 300°C or higher). Then, active species contained in the plasma generated by a plasma generator (not shown) are supplied into the processing container 301, and the deposition adhering to the inside of the processing container 301 is removed by the active species supplied into the processing container 301.

[0042] Next, the control unit 103 determines whether film formation has been performed on all the substrates W to be processed (S18). If there is a substrate W on which film formation has not been performed among the substrates W to be processed (S18: No), the process shown in step S10 is executed again. On the other hand, if film formation has been performed on all the substrates W to be processed (S18: Yes), the film formation method shown in this flowchart ends.

[0043] [Hardware] The control device 100 is realized by a computer 90 having a configuration as shown in FIG. 8, for example. FIG. 8 is a hardware configuration diagram showing an example of the computer 90 that realizes the control device 100. The computer 90 includes a CPU (Central Processing Unit) 91, a RAM (Random Access Memory) 92, a ROM (Read Only Memory) 93, an auxiliary storage device 94, a communication I / F (interface) 95, an input / output I / F 96, and a media I / F 97.

[0044] The CPU 91 operates based on a program stored in the ROM 93 or the auxiliary storage device 94 and controls each part. The ROM 93 stores a boot program executed by the CPU 91 when the computer 90 is started up, a program dependent on the hardware of the computer 90, and the like.

[0045] The auxiliary storage device 94 is, for example, an HDD (Hard Disk Drive) or an SSD (Solid State Drive), etc., and stores a program executed by the CPU 91 and data used by the program. The CPU 91 reads the program from the auxiliary storage device 94, loads it onto the RAM 92, and executes the loaded program.

[0046] The communication I / F 95 communicates with the measuring device 200 and the film forming device 300 via a communication line such as a LAN (Local Area Network). The communication I / F 95 receives data from the measuring device 200 or the film forming device 300 via the communication line and sends it to the CPU 91, and sends the data generated by the CPU 91 to the measuring device 200 or the film forming device 300 via the communication line.

[0047] The CPU 91 controls an input device such as a keyboard and an output device such as a display via the input / output I / F 96. The CPU 91 acquires a signal input from the input device via the input / output I / F 96 and sends it to the CPU 91. Also, the CPU 91 outputs the generated data to the output device via the input / output I / F 96.

[0048] The media I / F 97 reads a program or data stored in the recording medium 98 and stores it in the auxiliary storage device 94. The recording medium 98 is, for example, an optical recording medium such as a DVD (Digital Versatile Disc) or a PD (Phase change rewritable Disk), a magneto-optical recording medium such as an MO (Magneto-Optical disk), a tape medium, a magnetic recording medium, or a semiconductor memory or the like.

[0049] The CPU 91 of the computer 90 realizes the functions of the estimation unit 102 and the control unit 103 by executing the program loaded on the RAM 92. The waveform data 1010 is stored in advance in the ROM 93 or the auxiliary storage device 94.

[0050] The CPU 91 reads the program to be loaded on the RAM 92 from the recording medium 98 and stores it in the auxiliary storage device 94. As another example, the program may be acquired from another device via a communication line and stored in the auxiliary storage device 94. Alternatively, the CPU 91 may acquire the program from another device via a communication line, load the acquired program on the RAM 92, and execute it.

[0051] The above describes the embodiments. As described above, the film formation system 10 in the present embodiment includes a film forming apparatus 300 that forms a film on a substrate W, a measuring apparatus 200 that measures the reflectance of light for each wavelength in a film formed at a predetermined position in the film forming apparatus 300, and a control apparatus 100 that controls the measuring apparatus 200 and the film forming apparatus 300. The film forming apparatus 300 includes a processing container 301, a stage 307, a window 309, and a monitor part 310. The stage 307 is provided in the processing container 301 and the substrate W is placed thereon. The monitor part 310 is provided in the processing container 301 and has a recess 311. The window 309 is provided on the wall surface of the processing container 301 and is formed of a member that transmits light. The measuring apparatus 200 includes a light emitting part 201, a light receiving part 202, and a measuring part 203. The light emitting part 201 irradiates the monitor part 310 with light of a plurality of wavelengths through the window 309. The light receiving part 202 receives the light for each wavelength reflected from the monitor part 310 through the window 309. The measuring part 203 measures the reflectance of light for each wavelength in the processing container 301 based on the intensity of the light irradiated on the monitor part 310 and the intensity of the light reflected from the processing container 301. The control apparatus includes an estimation part and a control part. The estimation part estimates the thickness of the film formed on the substrate based on the reflectance of light for each wavelength in the structure. The control part stops the formation of the film on the substrate when the estimated thickness of the film reaches a predetermined thickness. Thereby, the thickness of the film formed on the substrate W can be accurately controlled.

[0052] Also, in the above-described embodiment, the control apparatus 100 has a DB101 that stores waveform data 1010 indicating the distribution of the reflectance of light for each wavelength, in association with the thickness of the film formed around the recess 311 of the monitor part 310. The estimation part 102 refers to the DB101 and estimates the thickness of the film formed on the substrate W as the thickness of the film associated with the distribution having the highest similarity to the distribution of the reflectance of light for each wavelength measured by the measuring apparatus 200. Thereby, the thickness of the film formed on the substrate W can be accurately controlled.

[0053] Also, in the above-described embodiment, the depth D1 of the concave portion 311 is 20 nm or more, and the width W1 of the opening of the concave portion 311 is a width that is not more than twice the thickness of the polymer film formed on the substrate W. Thereby, the thickness of the film formed at the bottom of the concave portion 311 can be increased.

[0054] Also, in the above-described embodiment, the monitor part 310 is disposed on the upper surface of the stage 307 and in a region outside the region of the stage 307 on which the substrate W is placed. Thereby, the correlation between the thickness of the film formed on the monitor part 310 and the thickness of the film formed on the substrate W can be maintained high. Therefore, the thickness of the film formed on the substrate W can be accurately controlled.

[0055] Also, in the above-described embodiment, the film forming apparatus 300 further includes a shower head 306 that forms a polymer film on the substrate W placed on the stage 307 by supplying gases of two types of monomers into the processing chamber 301. A polymer film is formed on the monitor part 310. The gases of the two types of monomers are an amine gas and an isocyanate gas, and the polymer has a urea bond. Since the polymer having a urea bond has a film formation rate that changes due to a slight change in conditions such as pressure and temperature, it is difficult to control the film thickness. In contrast, in the present embodiment, based on the reflectance of light for each wavelength in the monitor part 310 having the concave portion 311, the thickness of the polymer film formed on the substrate W can be measured in real time. Thereby, the thickness of the film formed on the substrate W can be accurately controlled.

[0056] Also, in the above-described embodiment, a heater for heating the window 309 is provided around the window 309, and when a polymer film is formed on the substrate W, the window 309 is heated to 300°C or higher. Thereby, it is possible to suppress the adhesion of deposits to the window 309, and it is possible to accurately measure the reflectance of light for each wavelength in the monitor part 310 even during film formation. Therefore, the thickness of the film formed on the substrate W can be accurately controlled.

[0057] In addition, in the above-described embodiment, a heater for heating the window 309 is provided around the window 309. When the inside of the processing container 301 is cleaned, the window 309 is heated to 300°C or higher. Thereby, the deposit attached to the window 309 can be efficiently removed. Therefore, the thickness of the film formed on the substrate W can be accurately controlled.

[0058] In addition, in the above-described embodiment, the monitor part 310 is disposed on the upper surface of the stage 307 and in a region outside the region of the stage 307 on which the substrate W is placed. A heater for heating the monitor part 310 is provided in the stage 307 below the monitor part 310. When the inside of the processing container 301 is cleaned, the monitor part 310 is heated to 300°C or higher. Thereby, the deposit attached to the monitor part 310 can be efficiently removed. Therefore, the thickness of the film formed on the substrate W can be accurately controlled.

[0059] In addition, the film forming method in the above-described embodiment includes steps a), b), c), and d). In step a), a film is formed on the substrate W placed on the stage 307 in the processing container 301. In step b), a plurality of wavelengths of light are irradiated onto the monitor part 310 provided in the processing container 301 and having the recess 311 through the window 309 formed by a member provided on the wall surface of the processing container 301 and transmitting light, and based on the intensity of the light irradiated onto the monitor part 310 and the intensity of the light reflected from the monitor part 310, the reflectance of light for each wavelength in the monitor part 310 is measured. In step c), the thickness of the film formed on the substrate W is estimated based on the reflectance of light for each wavelength in the monitor part 310. In step d), when the estimated thickness of the film reaches a predetermined thickness, the formation of the film on the substrate W is stopped. Thereby, the thickness of the film formed on the substrate W can be accurately controlled.

[0060] [Others] Note that the technology disclosed in the present application is not limited to the above-described embodiment, and numerous modifications are possible within the scope of the gist thereof.

[0061] For example, in the above-described embodiment, light of a plurality of wavelengths is irradiated onto the monitor part 310 having the recess 311 provided on the stage 307, and the thickness of the film formed on the substrate W is estimated based on the distribution of the reflectance of light for each wavelength in the monitor part 310. However, the disclosed technology is not limited to this. If the recess 311 is formed in the processing container 301, the recess 311 may be formed on the upper surface of the stage 307 outside the region where the substrate W is disposed, or the recess 311 may be formed on the wall surface of the processing container 301. However, even in this case, the window 309 is provided at a position facing the surface on which the recess 311 is formed, and light of a plurality of wavelengths is irradiated onto the surface on which the recess 311 is formed through the window 309.

[0062] Further, in the above-described embodiment, light of a plurality of wavelengths is irradiated onto the surface on which the plurality of recesses 311 are formed, but the disclosed technology is not limited to this. As another form, spot light of a plurality of wavelengths may be irradiated only on the bottom of the recess 311. Thereby, in the measurement of the distribution of the reflectance of light for each wavelength, the influence of the film formed on the periphery of the recess 311 and the side wall of the recess 311 can be suppressed. Thereby, noise in the measurement of the distribution of the reflectance of light for each wavelength can be suppressed.

[0063] Further, in the above-described embodiment, a polymer having a urea bond is used as an example of the polymer, but a polymer having a bond other than the urea bond may be used. Examples of the polymer having a bond other than the urea bond include polyurethane having a urethane bond. Polyurethane can be synthesized, for example, by copolymerizing a monomer having an alcohol group and a monomer having an isocyanate group. Further, polyurethane depolymerizes into a monomer having an alcohol group and a monomer having an isocyanate group when heated to a predetermined temperature.

[0064] It should be noted that the embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. In fact, the above-described embodiments can be embodied in various forms. Also, the above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the appended claims.

Explanation of Reference Numerals

[0065] W substrate 10 Film deposition system 100 Control device 101 DB 1010 Waveform data 102 Estimation unit 103 Control unit 200 Measuring device 201 Light emitting part 202 Light receiving part 203 Measuring part 205 Optical fiber 300 Film forming apparatus 301 Processing container 302 Exhaust device 303 Raw material supply source 304 Pipe 305 Vaporizer 306 Shower head 307 Stage 308 Heater 309 Window 310 Monitor parts 311 Concave part 40 Film 90 Computer 91 CPU 92 RAM 93 ROM 94 Auxiliary storage device 95 Communication I / F 96 Input / output I / F 97 Media I / F 98 Recording medium

Claims

1. A film forming apparatus for forming a film on a substrate, A measuring device for measuring the reflectance of light for each wavelength in a film formed at a predetermined position in the film forming apparatus, A control device for controlling the film forming apparatus and the measuring device comprising: The film forming apparatus includes a processing container, a stage provided in the processing container on which the substrate is placed, a structure provided in the processing container and having a recess, and a window formed of a member that transmits light and provided on a wall surface of the processing container and having The measuring device includes a light emitting unit that irradiates the structure with light of a plurality of wavelengths through the window, a light receiving unit that receives light for each wavelength reflected from the structure through the window, and a measuring unit that measures the reflectance of light for each wavelength in the structure based on the intensity of the light irradiated on the structure and the intensity of the light reflected from the structure and having The control device includes an estimating unit that estimates the thickness of the film formed on the substrate based on the reflectance of light for each wavelength in the structure, and a control unit that stops forming the film on the substrate when the estimated film thickness reaches a predetermined thickness and having, The depth of the recess is 20 nm or more, and the width of the opening of the recess is not more than twice the thickness of the film formed on the substrate. A film forming system.

2. The control device includes a database that stores data indicating the distribution of the reflectance of light for each wavelength in association with the thickness of the film formed around the recess, The estimating unit The film forming system according to claim 1, wherein, with reference to the database, the thickness of the film associated with the distribution having the highest similarity to the distribution of the reflectance of light for each wavelength measured by the measuring unit is estimated as the thickness of the film formed on the substrate.

3. The structure is The film forming system according to claim 1 or 2, which is disposed in an area outside the area of the stage on which the substrate is placed, on the upper surface of the stage.

4. The film forming apparatus is further provided with a gas supply unit that forms a polymer film on the substrate placed on the stage by supplying gases of two types of monomers into the processing container, The film forming system according to any one of claims 1 to 3, wherein the polymer film is formed on the structure.

5. The gases of the two types of monomers are an amine gas and an isocyanate gas, The film forming system according to claim 4, wherein the polymer has a urea bond.

6. A heater for heating the window is provided around the window, The film forming system according to claim 4 or 5, wherein the window is heated to 300 ° C or higher when the polymer film is formed on the substrate.

7. A heater for heating the window is provided around the window, The film forming system according to any one of claims 4 to 6, wherein the window is heated to 300 ° C or higher when the inside of the processing container is cleaned.

8. The structure is on the upper surface of the stage and is disposed in an area outside the area of the stage on which the substrate is placed, A heater for heating the structure is provided in the stage below the structure, The film forming system according to any one of claims 4 to 7, wherein when the inside of the processing container is cleaned, the structure is heated to 300 °C or higher.

9. a) forming a film on a substrate placed on a stage in a processing container; b) irradiating a structure provided in the processing container and having a recess with light of a plurality of wavelengths through a window formed by a member provided on a wall surface of the processing container and transmitting light, and based on the intensity of the light irradiated on the structure and the intensity of the light reflected from the structure, measuring the reflectance of the light for each wavelength in the structure; c) estimating the thickness of the film formed on the substrate based on the reflectance of the light for each wavelength in the structure; d) stopping the formation of the film on the substrate when the estimated thickness of the film reaches a predetermined thickness and the depth of the recess is 20 nm or more, and the width of the opening of the recess is 2 times or less the thickness of the film formed on the substrate. A film forming method.

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