Target Substance Supply Device, Extreme Ultraviolet Light Generation Device, and Method for Manufacturing Electronic Device

Abstract

To provide a target substance supply device used in an extreme-ultraviolet ray generator outputting extreme-ultraviolet ray by turning pulsed laser light into plasma by irradiating a target substance with pulsed laser light.SOLUTION: A target substance supply device comprises: a first container C1 containing a solid target material 27a; a first path 41 through which the solid target substance supplied from the first container passes; a first supply switching device 61 capable of switching between a first state of suppressing supply of the solid target substance from the first container to the first path and a second state allowing supply of the solid substance from the first container to the first path; a first valve V1 connected to the first path; a second path 42 which is connected to the first valve and through which the solid target material passes through the first valve passes; a first detector 81 outputting a first detection signal showing clogging of the solid target material in the second path; and a processor 80 that controls the first supply switching device to the first state based on the first detection signal.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present disclosure relates to a target substance supply device, an extreme ultraviolet light generation device, and a method for manufacturing an electronic device.

Background Art

[0002] In recent years, with the miniaturization of semiconductor processes, the miniaturization of transfer patterns in optical lithography of semiconductor processes has been rapidly progressing. In the next generation, microfabrication of 70 nm to 45 nm and further microfabrication of 32 nm or less are required. For this reason, for example, in order to meet the requirements of microfabrication of 32 nm or less, the development of an exposure apparatus combining an extreme ultraviolet (EUV) light generation device that generates EUV light with a wavelength of about 13 nm and a reduced projection reflection optics is expected.

[0003] As EUV light generation devices, there are proposed three types of devices: an LPP (Laser Produced Plasma) type device that uses plasma generated by irradiating a target substance with pulsed laser light, a DPP (Discharge Produced Plasma) type device that uses plasma generated by discharge, and an SR (Synchrotron Radiation) type device that uses synchrotron radiation light.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

[0005] A target substance supply device according to one aspect of the present disclosure is a target substance supply device used in an extreme ultraviolet light generation device that generates extreme ultraviolet light by converting a target substance into plasma by irradiating the target substance with pulsed laser light. The target substance supply device includes a first container that houses a solid target substance, a first path through which the solid target substance supplied from the first container passes, a first supply switching device that can switch between a first state that suppresses the supply of the solid target substance from the first container to the first path and a second state that allows the supply of the solid target substance from the first container to the first path, a first valve connected to the first path, a second path connected to the first valve and through which the solid target substance that has passed through the first valve passes, a first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path, and a processor that controls the first supply switching device to the first state based on the first detection signal.

[0006] A method for manufacturing an electronic device according to one aspect of the present disclosure includes a first container that houses a solid target material, a first path through which the solid target material supplied from the first container passes, a first supply switching device that can switch between a first state that suppresses the supply of the solid target material from the first container to the first path and a second state that allows the supply of the solid target material from the first container to the first path, a first valve connected to the first path, a second path connected to the first valve and through which the solid target material that has passed through the first valve passes, a first detector that outputs a first detection signal indicating that the solid target material is clogged in the second path, and a processor that controls the first supply switching device to the first state based on the first detection signal. A target material supply device, a reservoir that melts the solid target material replenished by the target material supply device to generate a molten target material, a nozzle that outputs the molten target material, a laser device that irradiates the molten target material output from the nozzle and reaching a predetermined region with pulsed laser light, and an EUV condenser mirror that condenses extreme ultraviolet light emitted from the plasma generated in the predetermined region. Extreme ultraviolet light is generated by an extreme ultraviolet light generation device including the above, the extreme ultraviolet light is output to an exposure device, and in order to manufacture an electronic device, the exposure device includes exposing the photosensitive substrate to the extreme ultraviolet light.

[0007] A method for manufacturing an electronic device according to one aspect of the present disclosure includes a first container that houses a solid target material, a first path through which the solid target material supplied from the first container passes, and a first supply switching device that can switch between a first state that suppresses the supply of the solid target material from the first container to the first path and a second state that allows the supply of the solid target material from the first container to the first path, a first valve connected to the first path, a second path connected to the first valve and through which the solid target material that has passed through the first valve passes, a first detector that outputs a first detection signal indicating that the solid target material is clogged in the second path, and a processor that controls the first supply switching device to the first state based on the first detection signal. A target material supply device, a reservoir that melts the solid target material replenished by the target material supply device to generate a molten target material, a nozzle that outputs the molten target material, a laser device that irradiates the molten target material output from the nozzle and reaching a predetermined region with pulsed laser light, and an EUV condenser mirror that condenses extreme ultraviolet light emitted from the plasma generated in the predetermined region. Inspecting a mask by irradiating the mask with the extreme ultraviolet light generated by the extreme ultraviolet light generating device, selecting a mask using the inspection result, and exposing and transferring the pattern formed on the selected mask onto a photosensitive substrate.

Brief Description of the Drawings

[0008] Some embodiments of the present disclosure will be described below by way of example only with reference to the accompanying drawings.

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[0009] <Content> 1. Overall description of EUV light generation system 11 1.1 Configuration 1.2 Operation 2. Comparative example 2.1 Configuration 2.1.1 Reservoir tank C1 2.1.2 Load lock chamber C2 2.1.3 Pressure tank C3 2.2 Operation 2.3 Problems 3. Target supply device 26 that stops the supply of solid target material 27a when the solid target material 27a is clogged 3.1 Configuration 3.2 Operation 3.2.1 Refilling of solid target material 27a 3.2.2 Detection of clogging of solid target material 27a 3.3 Variation 3.4 Function 4. Target supply device 26 that activates vibration devices 91 - 93 when the solid target material 27a is clogged 4.1 Configuration 4.2 Detection of clogging of solid target material 27a 4.3 Function 5. Target supply device 26 equipped with joints F1, F2, M1, and M2 for removing valve V1 5.1 Configuration 5.2 Operation 5.3 Function 6. Target supply device 26 equipped with joints F3 - F6 and M3 - M6 for removing load lock chamber C2 and valve V2 6.1 Configuration 6.2 Operation 6.3 Function 7. Target supply device 26 equipped with joints F1 - F6 and M1 - M6, and vibration devices 91 - 93 7.1 Configuration 7.2 Operation 8. Configuration example of detector 81 8.1 Eddy current type detector 81a 8.1.1 Configuration 8.1.2 Function 8.2 Capacitive detector 81b 8.2.1 Configuration 8.2.2 Function 8.3 Optical detector 81d 8.3.1 Configuration 8.3.2 Function 8.4 Detector 81i including optical fibers 81j and 81k 8.4.1 Configuration 8.4.2 Function 9. Others

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure and do not limit the content of the present disclosure. Also, not all of the configurations and operations described in each embodiment are essential as the configurations and operations of the present disclosure. Note that the same reference numerals are assigned to the same components, and redundant descriptions are omitted.

[0011] 1. Overall description of EUV light generation system 11 1.1 Configuration FIG. 1 schematically shows the configuration of an exemplary LPP-type EUV light generation system 11. The EUV light generation device 1 is used together with a laser device 3. In the present disclosure, a system including the EUV light generation device 1 and the laser device 3 is referred to as an EUV light generation system 11. The EUV light generation device 1 includes a chamber 2 and a target supply device 26. The chamber 2 is a sealable container. The target supply device 26 supplies a target substance into the chamber 2. The material of the target substance may include tin, terbium, gadolinium, lithium, xenon, or any combination of two or more of them.

[0012] The wall of chamber 2 is provided with through holes. The through holes are blocked by windows 21, and the pulsed laser light 32 output from the laser device 3 passes through the windows 21. Inside chamber 2, an EUV condenser mirror 23 having a reflecting surface in the shape of a rotational ellipsoid is disposed. The EUV condenser mirror 23 has first and second foci. On the surface of the EUV condenser mirror 23, a multilayer reflection film in which molybdenum and silicon are alternately laminated is formed. The EUV condenser mirror 23 is arranged such that its first focus is located in the plasma generation region 25 and its second focus is located in the intermediate focus point 292. A through hole 24 is provided in the central portion of the EUV condenser mirror 23, and the pulsed laser light 33 passes through the through hole 24.

[0013] The EUV light generation device 1 includes a processor 5, a target sensor 4, etc. The processor 5 is a processing device including a memory 501 storing a control program and a CPU (central processing unit) 502 executing the control program. The processor 5 is specially configured or programmed to execute various processes included in the present disclosure. The target sensor 4 detects at least one of the presence, trajectory, position, and velocity of the target 27. The target sensor 4 may have an imaging function.

[0014] Also, the EUV light generation device 1 includes a connection portion 29 that communicates the inside of chamber 2 and the inside of the EUV light utilization device 6. An example of the EUV light utilization device 6 will be described later with reference to FIGS. 20 and 21. Inside the connection portion 29, a wall 291 having an aperture formed therein is provided. The wall 291 is arranged such that its aperture is located at the second focus of the EUV condenser mirror 23.

[0015] Furthermore, the EUV light generation device 1 includes a laser light transmission device 34, a laser light condenser mirror 22, a target recovery unit 28 for recovering the target 27, etc. The laser light transmission device 34 includes an optical element for defining the transmission state of the laser light and an actuator for adjusting the position, orientation, etc. of this optical element.

[0016] 1.2 Operation Referring to FIG. 1, the operation of the EUV light generation system 11 will be described. The pulsed laser light 31 output from the laser device 3 passes through the laser light transmission device 34, passes through the window 21 as the pulsed laser light 32, and enters the chamber 2. The pulsed laser light 32 travels along the laser light path in the chamber 2, is reflected by the laser light condensing mirror 22, and is irradiated onto the target 27 as the pulsed laser light 33.

[0017] The target supply device 26 outputs the target 27 containing the target substance toward the plasma generation region 25 inside the chamber 2. The target 27 is irradiated with the pulsed laser light 33. The target 27 irradiated with the pulsed laser light 33 is turned into plasma, and the radiation light 251 is radiated from the plasma. The EUV light contained in the radiation light 251 is reflected by the EUV condensing mirror 23 with a high reflectivity compared to the light in other wavelength regions. The reflected light 252 containing the EUV light reflected by the EUV condensing mirror 23 is condensed at the intermediate condensing point 292 and output to the EUV light utilization device 6. Note that a plurality of pulses included in the pulsed laser light 33 may be irradiated onto one target 27.

[0018] The processor 5 controls the entire EUV light generation system 11. The processor 5 processes the detection result of the target sensor 4. Based on the detection result of the target sensor 4, the processor 5 controls the timing at which the target 27 is output, the output direction of the target 27, etc. Further, the processor 5 controls the oscillation timing of the laser device 3, the traveling direction of the pulsed laser light 32, the condensing position of the pulsed laser light 33, etc. The various controls described above are merely examples, and other controls may be added as necessary.

[0019] 2. Comparative Example 2.1 Configuration FIG. 2 schematically shows the configuration of the target supply device 26 according to the comparative example. The comparative example of the present disclosure is a form that the applicant recognizes as being known only to the applicant, and is not a known example recognized by the applicant. As shown in FIG. 2, the target supply device 26 according to the comparative example includes a target substance supply device 26a and a pressure tank C3. The target substance supply device 26a includes a reservoir tank C1, a load lock chamber C2, a target supply processor 60, supply pipes 41 to 44, gas cylinders G1 and G2, and a pressure regulator 62.

[0020] The target supply processor 60 is a processing device including a memory 601 storing a control program and a CPU 602 executing the control program. The target supply processor 60 corresponds to the processor in the present disclosure. The target supply processor 60 is specially configured or programmed to execute various processes included in the present disclosure.

[0021] 2.1.1 Reservoir Tank C1 The reservoir tank C1 is a container that stores a solid target substance 27a such as tin. The solid target substance 27a may be, for example, spherical grains of substantially the same size as each other. The reservoir tank C1 corresponds to the first container in the present disclosure. The temperature inside the reservoir tank C1 is lower than the melting point of the target substance. The reservoir tank C1 is connected to the gas cylinder G2 via a pipe L9. The gas cylinder G2 stores a noble gas such as argon gas or helium gas as a purge gas. The purge gas stored in the gas cylinder G2 is supplied into the reservoir tank C1. The pressure inside the reservoir tank C1 is approximately the same as the atmospheric pressure.

[0022] The reservoir tank C1 is connected to the load lock chamber C2 via supply pipes 41 and 42. A valve V1 is connected between the supply pipes 41 and 42. The supply pipes 41 and 42 respectively correspond to the first and second paths in the present disclosure, and the valve V1 corresponds to the first valve in the present disclosure.

[0023] 2.1.2 Load Lock Chamber C2 The load lock chamber C2 is a container that houses the solid target material 27a supplied from the reservoir tank C1. The load lock chamber C2 corresponds to the second container in the present disclosure. The temperature inside the load lock chamber C2 is lower than the melting point of the target material. The load lock chamber C2 is connected to the pressure tank C3 via supply pipes 43 and 44. A valve V2 is connected between the supply pipes 43 and 44. The supply pipes 43 and 44 respectively correspond to the third and fourth paths in the present disclosure, and the valve V2 corresponds to the second valve in the present disclosure.

[0024] 2.1.3 Pressure Tank C3 The pressure tank C3 is a container that houses the target material supplied from the load lock chamber C2. The pressure tank C3 corresponds to the third container in the present disclosure. The pressure tank C3 is connected to the gas cylinder G1 via the pressurized gas pipe L0. The gas cylinder G1 houses a high-pressure rare gas such as argon gas or helium gas as the pressurized gas. A pressure regulator 62 is arranged in the pressurized gas pipe L0. Based on the output of the pressure gauge P, the target supply processor 60 controls the pressure regulator 62, so that the pressure inside the pressure tank C3 is adjusted to a predetermined pressure higher than the atmospheric pressure.

[0025] A heater 71, a nozzle 72, and a level sensor 74 are arranged in the pressure tank C3. The heater 71 is connected to a power source (not shown) and heats the inside of the pressure tank C3 to a predetermined temperature higher than the melting point of the target material. Based on the output of a temperature sensor (not shown) arranged in the pressure tank C3, the power source is controlled, so that the temperature inside the pressure tank C3 is controlled. Thereby, the solid target material 27a is melted in the pressure tank C3 to generate a molten target material.

[0026] The nozzle 72 is disposed at the lower end of the pressure tank C3 in the direction of gravity. The tip of the nozzle 72 opens inside the chamber 2 (see FIG. 1). The molten target material inside the pressure tank C3 is output from the opening at the tip of the nozzle 72 due to the pressure difference between the pressurized gas supplied from the pressure regulator 62 and the pressure inside the chamber 2. When the piezoelectric element 73 applies vibration to the nozzle 72, the jet-like molten target material output from the nozzle 72 is separated into droplets to become the target 27. The level sensor 74 detects the liquid level position of the molten target material inside the pressure tank C3.

[0027] 2.2 Operation When the level sensor 74 detects that the liquid level position of the molten target material inside the pressure tank C3 has fallen below the threshold value, the supply of the solid target material 27a from the reservoir tank C1 is performed. In the comparative example, the solid target material 27a inside the reservoir tank C1 is supplied to the pressure tank C3 via the load lock chamber C2 as follows.

[0028] To supply a part of the solid target material 27a accommodated in the reservoir tank C1 to the load lock chamber C2, the target supply processor 60 opens the valve V1. At this time, the valve V2 is closed to maintain a high pressure inside the pressure tank C3. The solid target material 27a moves from the reservoir tank C1 to the load lock chamber C2. When a desired amount of the solid target material 27a has moved from the reservoir tank C1 to the load lock chamber C2, the target supply processor 60 closes the valve V1.

[0029] Next, in order to supply the solid target material 27a accommodated in the load lock chamber C2 to the pressure tank C3, the target supply processor 60 opens the valve V2. The solid target material 27a moves from the load lock chamber C2 to the pressure tank C3. The solid target material 27a supplied to the pressure tank C3 melts and mixes with the target material that has already been accommodated and melted in the pressure tank C3. The heater 71 suppresses a decrease in the temperature inside the pressure tank C3.

[0030] When the valve V2 is opened, a part of the gas inside the pressure tank C3 moves to the load lock chamber C2, and the pressure inside the pressure tank C3 temporarily decreases. If the valve V1 is closed before opening the valve V2, it is possible to prevent the high-pressure gas inside the pressure tank C3 from flowing from the valve V1 to the reservoir tank C1. Further, the pressurized gas inside the gas cylinder G1 is supplied to the pressure tank C3 via the pressure regulator 62, so that the pressure inside the pressure tank C3 recovers.

[0031] According to the comparative example, the solid target material 27a accommodated inside the reservoir tank C1, which is at approximately atmospheric pressure, can be supplied to the inside of the high-pressure pressure tank C3. Even if the target material inside the pressure tank C3 is consumed, the target material can be replenished without replacing the pressure tank C3, so that the downtime of the EUV light generation apparatus 1 can be reduced.

[0032] 2.3 Problems FIG. 3 schematically shows a cross section of the supply pipes 41 and 42 and the valve V1 disposed therebetween. The solid target material 27a may clog in the supply pipes 41 to 44. When the solid target material 27a clogs, the subsequent solid target material 27a accumulates in the direction opposite to its supply direction. When the solid target material 27a accumulates up to the location where the valve V1 is disposed, the valve V1 cannot be closed, and the pressure control inside the load lock chamber C2 and the pressure tank C3 may become impossible. Further, there is a possibility that the valve V1 may be damaged because the valve V1 bites into the solid target material 27a.

[0033] In some embodiments described below, when the solid target material 27a is clogged, the supply of the solid target material 27a from the reservoir tank C1 to the supply pipe 41 is configured to stop.

[0034] 3. Target supply device 26 that stops the supply of the solid target material 27a when the solid target material 27a is clogged 3.1 Configuration FIG. 4 schematically shows the configuration of the target supply device 26 according to the first embodiment. The target supply device 26 according to the first embodiment includes a target material supply device 26b. The target material supply device 26b includes a valve V3, a valve V4, a shutter 50, a meter 61, a clogging detection processor 80, detectors 81 to 83, a level sensor 84, and a display unit 85 in addition to the configuration of the comparative example.

[0035] The pressurized gas pipe L0 branches into a pipe L1 and a pipe L2. The pipe L1 is connected to the pressure tank C3 and is configured to supply pressurized gas to the pressure tank C3. A valve V3 is disposed in the pipe L1. The pressure gauge P is disposed in the pipe L1 between the pressure tank C3 and the valve V3. The pipe L2 is connected to the load lock chamber C2 and is configured to supply pressurized gas to the load lock chamber C2. A valve V4 is disposed in the pipe L2.

[0036] The meter 61 is disposed at the connection portion of the reservoir tank C1 with the lower end of the supply pipe 41. The meter 61 normally suppresses the supply of the solid target material 27a to the supply pipe 41. This state is referred to as the first state. The meter 61 can supply the solid target substance 27a to the supply pipe 41 while measuring it. The measurement of the solid target substance 27a includes counting the number of grains of the solid target substance 27a. The measured solid target substance 27a moves by gravity and passes through the supply pipe 41, the valve V1, and the supply pipe 42 in this order and moves into the load lock chamber C2. The state in which the meter 61 allows the supply of the solid target substance 27a is defined as the second state. The meter 61 corresponds to the first supply switching device in the present disclosure.

[0037] The purge gas contained in the gas cylinder G2 may be any gas that hardly reacts with the solid target substance 27a, and is not limited to noble gases and may be dry air.

[0038] The detectors 81 to 83 are respectively arranged in the supply pipes 42 to 44. The detectors 81 to 83 output detection signals indicating that the solid target substance 27a is clogged in the supply pipes 42 to 44 respectively. The detectors 81 to 83 respectively correspond to the first to third detectors in the present disclosure, and the detection signals output by the detectors 81 to 83 respectively correspond to the first to third detection signals in the present disclosure. Specific examples of the detectors 81 to 83 will be described later with reference to FIGS. 16 to 19. The display unit 85 is a device that displays information so that it can be visually recognized, and may be an image display device or a light-emitting element.

[0039] The clogging detection processor 80 is a processing device including a memory 801 storing a control program and a CPU 802 executing the control program. The clogging detection processor 80 corresponds to the processor in the present disclosure. The clogging detection processor 80 is specially configured or programmed to execute various processes included in the present disclosure.

[0040] The clogging detection processor 80 determines the presence or absence of clogging of the solid target substance 27a in the supply pipes 42 to 44 based on the detection signals output by the detectors 81 to 83. The clogging detection processor 80 identifies the location where the clogging of the solid target substance 27a has occurred and causes it to be displayed on the display unit 85. When the detector 81 detects clogging, the location where the clogging has occurred is the supply pipe 42; when the detector 82 detects clogging, it is the supply pipe 43; and when the detector 83 detects clogging, it is the supply pipe 44.

[0041] Figs. 5 and 6 schematically show the configuration of the load lock chamber C2. The shutter 50 and the level sensor 84 are arranged in the load lock chamber C2.

[0042] The shutter 50 includes a receiving plate 51 and an actuator 52. The receiving plate 51 is located near the lower end of the load lock chamber C2. The actuator 52 is configured to be able to switch the shutter 50 between a third state shown in Fig. 5 and a fourth state shown in Fig. 6 by moving the receiving plate 51.

[0043] In the third state, the receiving plate 51 is arranged so as to block the connection portion between the load lock chamber C2 and the supply pipe 43. Thereby, the supply of the solid target substance 27a to the supply pipe 43 is suppressed. In the fourth state, the receiving plate 51 is arranged at a position away from the connection portion between the load lock chamber C2 and the supply pipe 43. Thereby, the supply of the solid target substance 27a to the supply pipe 43 is permitted. The solid target substance 27a moves by gravity and passes through the supply pipe 43, the valve V2, and the supply pipe 44 in this order and moves to the pressure tank C3. The shutter 50 is normally in the third state and is temporarily in the fourth state when moving the solid target substance 27a to the supply pipe 43. The shutter 50 corresponds to the second supply switching device in the present disclosure.

[0044] The level sensor 84 detects whether the amount of the solid target substance 27a accommodated inside the load lock chamber C2 is equal to or greater than a predetermined amount.

[0045] 3.2 Operation 3.2.1 Supply of Solid Target Material 27a FIG. 7 is a flowchart showing a procedure for generating EUV light in the first embodiment. The procedure for generating EUV light shown in FIG. 7 includes a procedure for supplying the solid target material 27a. The processes shown in FIG. 7 are mainly executed by the target supply processor 60 (see FIG. 4), but a part thereof may be executed by the processor 5 (see FIG. 1).

[0046] In S101, the target supply processor 60 uses a loading device (not shown) to load the solid target material 27a into the reservoir tank C1. At this time, the target supply processor 60 sets the meter 61 to the first state, sets the shutter 50 to the third state, and closes the valves V1 to V4. After loading the solid target material 27a into the reservoir tank C1, purge gas is supplied from the gas cylinder G2 to the reservoir tank C1.

[0047] In S102, the target supply processor 60 supplies the solid target material 27a to the load lock chamber C2 by opening the valve V1 and setting the meter 61 to the second state. The operation of S102 may be repeated according to the amount of the solid target material 27a in the load lock chamber C2 detected by the level sensor 84.

[0048] In S103, the target supply processor 60 closes the valve V1, opens the valve V4, and replaces the inside of the load lock chamber C2 with a rare gas which is an inert gas. The exhaust of the inside of the load lock chamber C2 by an exhaust device (not shown) and the introduction of the rare gas through the valve V4 may be alternately executed a plurality of times to reduce the oxygen partial pressure in the load lock chamber C2.

[0049] In S104, the target supply processor 60 supplies the solid target substance 27a to the pressure tank C3 by closing the valve V4, opening the valve V2, and setting the shutter 50 to the fourth state. Thereafter, the target supply processor 60 sets the shutter 50 to the third state and closes the valve V2.

[0050] In S105, the target supply processor 60 determines whether the input of the solid target substance 27a into the pressure tank C3 is an initial input. If the molten target substance is already contained inside the pressure tank C3 and the target 27 is being output from the nozzle 72, it is determined that this is not an initial input (S105: NO), and the target supply processor 60 proceeds to process S111. If the target 27 is not being output from the nozzle 72, it is determined that this is an initial input (S105: YES), and the target supply processor 60 proceeds to process S106.

[0051] In S106, the target supply processor 60 controls the power supply of the heater 71 to melt the solid target substance 27a inside the pressure tank C3. In S107, the target supply processor 60 determines whether the liquid level position of the molten target substance inside the pressure tank C3 output from the level sensor 74 is equal to or higher than a threshold value. If the liquid level position of the molten target substance is less than the threshold value (S107: NO), the target supply processor 60 returns to process S102. If the liquid level position of the molten target substance is equal to or higher than the threshold value (S107: YES), the target supply processor 60 proceeds to process S108.

[0052] In S108, the target supply processor 60 opens the valve V3 and pressurizes the inside of the pressure tank C3 by controlling the pressure regulator 62. When the inside of the pressure tank C3 is pressurized, the molten target substance is output in a jet form from the nozzle 72.

[0053] In S109, the target supply processor 60 controls a driver (not shown) of the piezo element 73 to vibrate the nozzle 72, thereby starting the generation of the droplet-shaped target 27. In S110, the processor 5 controls the laser device 3 to irradiate the target 27 with pulsed laser light, thereby generating EUV.

[0054] In S111, the processor 5 determines whether to continue generating EUV light. If continuing to generate EUV light (S111: YES), the processor 5 proceeds to S112. If not continuing to generate EUV light (S111: NO), the processor 5 ends the processing of this flowchart.

[0055] In S112, the target supply processor 60 determines whether to replenish the solid target material 27a. For example, if the liquid level position output from the level sensor 74 is less than the threshold value, it is determined to replenish the solid target material 27a (S112: YES), and the processor 5 returns the process to S102. If the liquid level position is greater than or equal to the threshold value, it is determined not to replenish the solid target material 27a (S112: NO), and the processor 5 returns the process to S110. As described above, the replenishment of the solid target material 27a and the generation of EUV light are performed.

[0056] 3.2.2 Detection of clogging of the solid target material 27a FIG. 8 is a flowchart showing a clogging detection procedure of the solid target material 27a in the first embodiment. The process shown in FIG. 8 is executed by the clogging detection processor 80 (see FIG. 4).

[0057] In S1, the clogging detection processor 80 activates the detectors 81 to 83. In S2, the clogging detection processor 80 determines whether to stop the operation of the detectors 81 to 83. If the operation of the detectors 81 to 83 is to be stopped (S2: YES), the clogging detection processor 80 proceeds to S10. If the operation of the detectors 81 to 83 is not to be stopped (S2: NO), the clogging detection processor 80 proceeds to S3. The startup and stop of the detectors 81 to 83 are performed based on a signal from the processor 5.

[0058] In S3, the clogging detection processor 80 determines whether there is a clogged location. If at least one of the detectors 81 to 83 detects clogging, the clogging detection processor 80 determines that there is a clogged location (S3: YES) and proceeds to S4. If none of the detectors 81 to 83 detect clogging, the clogging detection processor 80 determines that there is no clogged location (S3: NO) and returns the process to S2.

[0059] In S4, the clogging detection processor 80 transmits a signal requesting the stop of the supply of the solid target substance 27a to the target supply processor 60. The stop of the supply of the solid target substance 27a is performed as follows.

[0060] (1) When the detector 81 detects clogging, the meter 61 is set to the first state to stop the supply of the solid target substance 27a to the supply pipe 41. Thereby, jamming when the valve V1 is operated can be prevented. Before operating the valve V1, it may be waited until the clogging of the supply pipe 42 is eliminated, and it may be confirmed that the detector 81 no longer detects clogging.

[0061] (2) When the detector 82 detects clogging, the meter 61 is set to the first state to stop the supply of the solid target substance 27a to the supply pipe 41. Thereby, jamming when the shutter 50 is operated can be prevented. Before operating the shutter 50, it may be waited until the clogging of the supply pipe 43 is eliminated, and it may be confirmed that the detector 82 no longer detects clogging.

[0062] (3) When the detector 83 detects a clogging, the meter 61 is set to the first state to stop the supply of the solid target substance 27a to the supply pipe 41. This can prevent jamming when the valve V2 is operated. Before operating the valve V2, it may be possible to wait until the clogging in the supply pipe 44 is resolved and confirm that the detector 83 no longer detects a clogging.

[0063] The clogging detection processor 80 further identifies the location where the clogging has occurred and causes it to be displayed on the display unit 85 as maintenance information. By identifying and displaying the location where the clogging has occurred, the operator can perform the restoration work efficiently. The restoration work by the operator includes hitting the location where the clogging has occurred in the supply pipes 42 to 44 or replacing parts.

[0064] When it takes a long time to resolve the clogging, the clogging detection processor 80 may suppress the output of the target 27 from the nozzle 72 by exhausting a part of the gas inside the pressure tank C3 using an exhaust device (not shown) connected to the pressure tank C3. If all of the molten target substance inside the pressure tank C3 is output as the target 27, the inside of the nozzle 72 may not be filled with the molten target substance, and oxides of the target substance may adhere to the inside of the nozzle 72. By suppressing the output of the target 27, it is possible to prevent the nozzle 72 from being blocked.

[0065] After S4, the clogging detection processor 80 returns the process to S2. In S10, the clogging detection processor 80 stops the operation of the detectors 81 to 83 and ends the processing of this flowchart.

[0066] 3.3 Variation FIG. 9 schematically shows the configuration of a target supply device 26 according to a modification of the first embodiment. The target supply device 26 according to the modification includes a target substance supply device 26c. The path of the solid target substance 27a between the reservoir tank C1 and the valve V1 is not limited to the supply pipe 41 (see FIG. 4), and may be a path 41a that is entirely or partially exposed to the outside. For example, the path 41a may include a flexible pipe 41b and a funnel 41c that are located apart from each other, and the solid target substance 27a may be configured to freely fall from the lower end of the flexible pipe 41b into the funnel 41c.

[0067] 3.4 Operation According to the first embodiment, the target supply processor 60 controls the meter 61 to be in the first state based on the detection signal output by the detector 81. Thereby, it is possible to prevent jamming when the valve V1 is operated.

[0068] According to the first embodiment, the target supply processor 60 controls the meter 61 to be in the first state based on the detection signal output by the detector 82. Thereby, it is possible to prevent jamming when the shutter 50 is operated.

[0069] According to the first embodiment, the target supply processor 60 controls the meter 61 to be in the first state based on the detection signal output by the detector 83. Thereby, it is possible to prevent jamming when the valve V2 is operated.

[0070] According to the first embodiment, the clogging detection processor 80 identifies the supply pipe in which the solid target substance 27a in the supply pipes 42 to 44 is clogged based on the detection signal output by any one of the detectors 81 to 83. The clogging detection processor 80 outputs a signal to the display unit 85 so as to display the identified result. Thereby, the operator or the like can efficiently perform the restoration work.

[0071] According to the first embodiment, the target supply processor 60 suppresses the output of the target 27 from the nozzle 72 by exhausting a part of the gas inside the pressure tank C3 based on the detection signal output by any one of the detectors 81 to 83. Thereby, it is possible to suppress the oxide of the target substance from adhering inside the nozzle 72 and blocking the nozzle 72. In other respects, the first embodiment is the same as the comparative example.

[0072] 4. Target supply device 26 that operates vibration devices 91 to 93 when the solid target substance 27a is clogged 4.1 Configuration FIG. 10 schematically shows the configuration of the target supply device 26 according to the second embodiment. The target supply device 26 according to the second embodiment includes a target substance supply device 26d. The target substance supply device 26d includes vibration devices 91 to 93 in addition to the configuration of the first embodiment. The vibration devices 91 to 93 are respectively provided in the supply pipes 42 to 44. The vibration devices 91 to 93 may be arranged at positions facing the detectors 81 to 83 with the supply pipes 42 to 44 interposed therebetween. Each of the vibration devices 91 to 93 includes a vibration part (not shown) such as a piezo element and a driver (not shown). The vibration devices 91 to 93 respectively correspond to the first to third vibration devices in the present disclosure.

[0073] FIG. 11 shows an example of the detector 81 and the vibration device 91 arranged in the supply pipe 42. The detector 81 and the vibration device 91 are respectively attached to the base part 810 and the base part 910. The base part 810 and the base part 910 each have a shape of half of a ring. By arranging the base part 810 and the base part 910 at positions facing each other with the supply pipe 42 interposed therebetween and fixing them to each other, the detector 81 and the vibration device 91 are fixed to the supply pipe 42.

[0074] 4.2 Detection of clogging of the solid target substance 27a FIG. 12 is a flowchart showing a procedure for detecting clogging of the solid target material 27a in the second embodiment. The processes shown in FIG. 12 are executed by the clogging detection processor 80.

[0075] The processes from S1 to S4 are the same as those described with reference to FIG. 8. In the second embodiment, after S4, the clogging detection processor 80 proceeds to S5. In S5, the clogging detection processor 80 operates the vibration devices 91 to 93 for a certain period of time. The vibration device 91 may be operated when the detector 81 detects clogging, the vibration device 92 may be operated when the detector 82 detects clogging, and the vibration device 93 may be operated when the detector 83 detects clogging. Alternatively, when any one of the detectors 81 to 83 detects clogging, all of the vibration devices 91 to 93 may be operated.

[0076] When operating any one of the vibration devices 91 to 93, the processor 5 may stop the irradiation of the pulsed laser light by the laser device 3. If the nozzle 72 vibrates due to the operation of any one of the vibration devices 91 to 93, it may be difficult to stably generate the target 27. By stopping the irradiation of the pulsed laser light, the generation of EUV light can be stopped, and a decrease in the quality of EUV light can be suppressed.

[0077] In S6, the clogging detection processor 80 determines whether there is a clogged portion. This process is the same as S3. When at least one of the detectors 81 to 83 detects clogging, the clogging detection processor 80 determines that there is a clogged portion (S6: YES) and proceeds to S8. When none of the detectors 81 to 83 detects clogging, the clogging detection processor 80 determines that there is no clogged portion (S6: NO) and proceeds to S7.

[0078] In S7, the clogging detection processor 80 causes the display unit 85 to display information indicating the elimination of clogging, and resumes the supply of the solid target material 27a using the measuring device 61. After S7, the clogging detection processor 80 returns to S2.

[0079] In S8, the clogging detection processor 80 determines whether the number of vibrations is equal to or greater than a specified number. If the number of vibrations is less than the specified number (S8: NO), since there is a possibility that further vibration can eliminate the clogging, the clogging detection processor 80 returns the process to S5. If the number of vibrations is equal to or greater than the specified number (S8: YES), the clogging detection processor 80 advances the process to S9.

[0080] In S9, the clogging detection processor 80 causes the maintenance information to be displayed on the display unit 85. After S9, the clogging detection processor 80 advances the process to S10. The process of S10 is the same as that described with reference to FIG. 8.

[0081] 4.3 Operation According to the second embodiment, the target substance supply device 26d includes a vibration device 91 that vibrates the supply pipe 42, and the clogging detection processor 80 operates the vibration device 91 based on the detection signal output by the detector 81. Thereby, the clogging of the supply pipe 42 can be automatically eliminated without the operator performing a return operation.

[0082] According to the second embodiment, the detector 81 and the vibration device 91 are arranged to face each other with the supply pipe 42 interposed therebetween. Since the detector 81 and the vibration device 91 are arranged at positions close to each other, the supply pipe 42 can be attached with a small amount of work, and the electrical wiring for the detector 81 and the vibration device 91 can also be arranged together. The same applies to the arrangement of the detector 82 and the vibration device 92 and the arrangement of the detector 83 and the vibration device 93.

[0083] According to the second embodiment, the target substance supply device 26d includes a vibration device 92 that vibrates the supply pipe 43, and the clogging detection processor 80 operates the vibration device 92 based on the detection signal output by the detector 82. Thereby, the clogging of the supply pipe 43 can be automatically eliminated.

[0084] According to the second embodiment, the target substance supply device 26d includes a vibration device 93 that vibrates the supply pipe 44, and the clogging detection processor 80 operates the vibration device 93 based on the detection signal output by the detector 83. Thereby, clogging of the supply pipe 44 can be automatically eliminated.

[0085] According to the second embodiment, when the clogging detection processor 80 operates any one of the vibration devices 91 to 93 based on the detection signal output from any one of the detectors 81 to 83, the processor 5 stops the irradiation of the pulsed laser light by the laser device 3. Thereby, generation of EUV light can be stopped, and deterioration of the quality of EUV light can be suppressed. In other respects, the second embodiment is the same as the first embodiment.

[0086] 5. Target supply device 26 equipped with joints F1, F2, M1, and M2 for removing valve V1 5.1 Configuration FIG. 13 schematically shows the configuration of the target supply device 26 according to the third embodiment. The target supply device 26 according to the third embodiment includes a target substance supply device 26e. The target substance supply device 26e includes joints F1, F2, M1, and M2 in addition to the configuration of the first embodiment.

[0087] Joints F1 and F2 are female, and joints M1 and M2 are male. The paired joints F1 and M1 are arranged in the middle of the supply pipe 41, and the paired joints F2 and M2 are arranged in the middle of the supply pipe 42. Thereby, the valve V1 is configured to be removable. Joints F1 and M1 correspond to the first joint in the present disclosure, and joints F2 and M2 correspond to the second joint in the present disclosure.

[0088] When a clogging occurs in the supply pipe 42, since the cause of the clogging is likely to exist in the supply pipe 42, it is desirable that not only the valve V1 but also a part of the supply pipe 42 can be removed. Therefore, joints F2 and M2 may be arranged in the supply pipe 42 between the detector 81 and the load lock chamber C2. In this case, the detector 81, the valve V1, and the joints M1 and M2 can be removed as an integrated unit U1.

[0089] 5.2 Operation In S3 of FIG. 8, when the detector 81 detects a clogging and the return operation by the operator requires replacement of parts, the unit U1 can be removed and replaced.

[0090] 5.3 Function According to the third embodiment, the target substance supply device 26e includes a pair of joints F1 and M1 located in the supply pipe 41 between the meter 61 and the valve V1, and a pair of joints F2 and M2 located in the supply pipe 42 between the detector 81 and the load lock chamber C2. Since the valve V1 and the detector 81 located between the joints F1 and M1 and the joints F2 and M2 are integrally removable, maintenance work can be efficiently performed. In other respects, the third embodiment is the same as the first embodiment. Alternatively, the joints F1, F2, M1, and M2 may be arranged in the second embodiment.

[0091] 6. Target Supply Device 26 Equipped with Joints F3 to F6 and M3 to M6 for Removing the Load Lock Chamber C2 and the Valve V2 6.1 Configuration FIG. 14 schematically shows the configuration of the target supply device 26 according to the fourth embodiment. The target supply device 26 according to the fourth embodiment includes a target substance supply device 26f. The target substance supply device 26f includes joints F3 to F6 and M3 to M6 in addition to the configuration of the third embodiment.

[0092] The joints F3 to F6 are female, and the joints M3 to M6 are male. The mating joints F3 and M3 are arranged in the supply pipe 42 between the joint F2 and the load lock chamber C2, and the mating joints F4 and M4 are arranged in the middle of the supply pipe 43. Thereby, the load lock chamber C2 is configured to be removable. The joints F3 and M3 correspond to the third joint in the present disclosure, and the joints F4 and M4 correspond to the fourth joint in the present disclosure.

[0093] The joints F4 and M4 may be arranged in the supply pipe 43 between the detector 82 and the valve V2. In this case, the detector 82, the load lock chamber C2, and the joints M3 and M4 can be removed as an integrated unit U2.

[0094] The mating joints F5 and M5 are arranged in the supply pipe 43 between the joint F4 and the valve V2, and the mating joints F6 and M6 are arranged in the middle of the supply pipe 44. Thereby, the valve V2 is configured to be removable. The joints F5 and M5 correspond to the fifth joint in the present disclosure, and the joints F6 and M6 correspond to the sixth joint in the present disclosure.

[0095] The joints F6 and M6 may be arranged in the supply pipe 44 between the detector 83 and the pressure tank C3. In this case, the detector 83, the valve V2, and the joints M5 and M6 can be removed as an integrated unit U3.

[0096] 6.2 Operation In S3 of FIG. 8, when the detector 82 detects a clogging and the recovery operation by the operator requires replacement of parts, the unit U2 can be removed and replaced. When the detector 83 detects a clogging and the recovery operation by the operator requires replacement of parts, the unit U3 can be removed and replaced.

[0097] 6.3 Function According to the fourth embodiment, the target substance supply device 26f includes a pair of joints F3 and M3 located in the supply pipe 42 between the joint F2 and the load lock chamber C2, and a pair of joints F4 and M4 located in the supply pipe 43 between the detector 82 and the valve V2. Since the load lock chamber C2 and the detector 82 located between the joints F3 and M3 and the joints F4 and M4 are integrally removable, maintenance work can be efficiently performed.

[0098] According to the fourth embodiment, the target substance supply device 26f includes a pair of joints F5 and M5 located in the supply pipe 43 between the joint F4 and the valve V2, and a pair of joints F6 and M6 located in the supply pipe 44 on the downstream side of the detector 83. Since the valve V2 and the detector 83 located between the joints F5 and M5 and the joints F6 and M6 are integrally removable, maintenance work can be efficiently performed. In other respects, the fourth embodiment is the same as the third embodiment.

[0099] 7. Target supply device 26 equipped with joints F1 - F6 and M1 - M6 and vibration devices 91 - 93 7.1 Configuration FIG. 15 schematically shows the configuration of the target supply device 26 according to the fifth embodiment. The target supply device 26 according to the fifth embodiment includes a target substance supply device 26g. The target substance supply device 26g includes joints F1 - F6 and M1 - M6 in addition to the configuration of the second embodiment.

[0100] The configuration and operation of the joints F1 - F6 and M1 - M6 may be the same as those described with reference to FIG. 14. In the fifth embodiment, the vibration devices 91 - 93 are arranged at positions facing the detectors 81 - 83, respectively.

[0101] 7.2 Operation Since the vibration devices 91 - 93 are arranged at positions facing the detectors 81 - 83, respectively, the units U1 - U3 each include the vibration devices 91 - 93 and are integrally removable for each unit. In other respects, the fifth embodiment is the same as the second embodiment.

[0102] 8. Configuration example of detector 81 The configuration examples of detectors 81a, 81b, 81d, and 81i as the configuration example of detector 81 will be described below. The solid target substance 27a is a metal, and the supply pipes 42 to 44 may also be metals. In order to detect the solid target substance 27a inside the supply pipe 42, the detectors 81a, 81b, 81d, and 81i are configured as follows.

[0103] 8.1 Eddy current type detector 81a 8.1.1 Configuration FIG. 16 schematically shows the configuration of the detector 81a in the sixth embodiment. The detector 81a is of the eddy current type.

[0104] The detector 81a generates a pulsed first magnetic field from the outside of the supply pipe 42 toward the supply pipe 42. Eddy currents are generated in the supply pipe 42 or inside thereof by the first magnetic field. Different eddy currents are generated depending on whether or not there is a solid target substance 27a inside the supply pipe 42. The detector 81a determines whether or not the solid target substance 27a is clogged inside the supply pipe 42 by detecting the eddy currents. The detection of the eddy currents is performed by detecting a second magnetic field generated by the eddy currents.

[0105] 8.1.2 Operation According to the sixth embodiment, the detector 81a is located outside the supply pipe 42, generates eddy currents in the supply pipe 42 and inside thereof, and detects these eddy currents. Thereby, it is possible to attach the detector 81a that can detect the solid target substance 27a inside the supply pipe 42 without drilling a hole in the supply pipe 42. In other respects, the sixth embodiment is the same as the first to fifth embodiments.

[0106] 8.2 Capacitive detector 81b 8.2.1 Configuration FIG. 17 schematically shows the configuration of the detector 81b in the seventh embodiment. The detector 81b is a capacitive type.

[0107] The detector 81b is inserted into a hole formed in the supply pipe 42, and one end of the detector 81b is exposed inside the supply pipe 42. The detector 81b is fixed to the supply pipe 42 by a fixing portion 81c. The detector 81b detects whether the solid target substance 27a is clogged inside the supply pipe 42 by detecting the capacitance between the detector 81b and the object inside the supply pipe 42.

[0108] 8.2.2 Operation According to the seventh embodiment, the detector 81b detects the capacitance between itself and the solid target substance 27a inside the supply pipe 42 through a hole formed in the supply pipe 42. Thereby, it is possible to detect whether the solid target substance 27a is clogged inside the supply pipe 42. In other respects, the seventh embodiment is the same as the first to fifth embodiments.

[0109] 8.3 Optical detector 81d 8.3.1 Configuration FIG. 18 schematically shows the configuration of the detector 81d in the eighth embodiment. The detector 81d is an optical type and includes a light source 81e, a light sensor 81f, and windows 81g and 81h.

[0110] The light source 81e and the light sensor 81f are arranged outside the supply pipe 42 and face each other with the supply pipe 42 interposed therebetween. The windows 81g and 81h are formed on the opposing wall surfaces of the supply pipe 42 between the light source 81e and the light sensor 81f. The windows 81g and 81h respectively correspond to the first and second windows in the present disclosure.

[0111] The detection light generated from the light source 81e and incident on the optical sensor 81f through the windows 81g and 81h has different light amounts depending on whether the solid target substance 27a is clogged inside the supply pipe 42. The detector 81d can detect whether the solid target substance 27a is clogged inside the supply pipe 42 based on the light amount of the detection light detected by the optical sensor 81f.

[0112] 8.3.2 Operation According to the eighth embodiment, the detector 81d includes windows 81g and 81h respectively disposed on opposing wall surfaces of the supply pipe 42, a light source 81e that makes detection light incident inside the supply pipe 42 through the window 81g, and an optical sensor 81f that detects light exiting to the outside of the supply pipe 42 through the window 81h. Thereby, it is possible to detect whether the solid target substance 27a is clogged inside the supply pipe 42. In other respects, the eighth embodiment is the same as the first to fifth embodiments.

[0113] 8.4 Detector 81i including optical fibers 81j and 81k 8.4.1 Configuration FIG. 19 schematically shows the configuration of the detector 81i in the ninth embodiment. The detector 81i is optical and includes a light source 81e, an optical sensor 81f, and optical fibers 81j and 81k.

[0114] The light source 81e and the optical sensor 81f are disposed outside the supply pipe 42 at positions facing each other with the supply pipe 42 interposed therebetween. The optical fibers 81j and 81k penetrate through the opposing wall surfaces of the supply pipe 42 between the light source 81e and the optical sensor 81f, with one end of each exposed outside the supply pipe 42 and the other end of each exposed inside the supply pipe 42. The optical fibers 81j and 81k respectively correspond to the first and second optical fibers in the present disclosure.

[0115] The detection light generated from the light source 81e and incident on the optical sensor 81f through the optical fibers 81j and 81k has different amounts of light depending on whether the solid target substance 27a is clogged inside the supply pipe 42. The detector 81i can detect whether the solid target substance 27a is clogged inside the supply pipe 42 based on the amount of the detection light detected by the optical sensor 81f.

[0116] 8.4.2 Operation According to the ninth embodiment, the detector 81i includes optical fibers 81j and 81k that penetrate the opposing wall surfaces of the supply pipe 42, a light source 81e that causes detection light to enter the inside of the supply pipe 42 through the optical fiber 81j, and an optical sensor 81f that detects the light that exits to the outside of the supply pipe 42 through the optical fiber 81k. Thereby, it is possible to detect whether the solid target substance 27a is clogged inside the supply pipe 42. In other respects, the ninth embodiment is the same as the first to fifth embodiments.

[0117] 9. Others FIG. 20 schematically shows the configuration of an exposure apparatus 6a connected to the EUV light generation system 11. In FIG. 20, an exposure apparatus 6a as the EUV light utilization apparatus 6 (see FIG. 1) includes a mask irradiation unit 608 and a workpiece irradiation unit 609. The mask irradiation unit 608 illuminates the mask pattern on the mask table MT through a reflective optical system with EUV light incident from the EUV light generation system 11. The workpiece irradiation unit 609 forms an image of the EUV light reflected by the mask table MT on a workpiece (not shown) disposed on the workpiece table WT through a reflective optical system. The workpiece is a photosensitive substrate such as a semiconductor wafer coated with a photoresist. The exposure apparatus 6a exposes the workpiece to the EUV light reflecting the mask pattern by synchronously translating the mask table MT and the workpiece table WT in parallel. An electronic device can be manufactured by transferring a device pattern to a semiconductor wafer through the exposure process as described above.

[0118] FIG. 21 schematically shows the configuration of the inspection apparatus 6b connected to the EUV light generation system 11. In FIG. 21, the inspection apparatus 6b as the EUV light utilization apparatus 6 (see FIG. 1) includes an illumination optical system 603 and a detection optical system 606. The illumination optical system 603 reflects the EUV light incident from the EUV light generation system 11 and irradiates the mask 605 disposed on the mask stage 604. The mask 605 mentioned here includes a mask blank before a pattern is formed. The detection optical system 606 reflects the EUV light from the illuminated mask 605 and forms an image on the light receiving surface of the detector 607. The detector 607 that has received the EUV light acquires an image of the mask 605. The detector 607 is, for example, a TDI (time delay integration) camera. Based on the image of the mask 605 obtained through the above steps, defects of the mask 605 are inspected, and using the inspection results, a mask suitable for manufacturing an electronic device is selected. Then, an electronic device can be manufactured by exposing and transferring the pattern formed on the selected mask onto a photosensitive substrate using the exposure apparatus 6a.

[0119] The above description is intended as an illustration and not a limitation. Thus, it is apparent to those skilled in the art that modifications can be made to the embodiments of the present disclosure without departing from the scope of the claims. It is also apparent to those skilled in the art that the embodiments of the present disclosure can be used in combination.

[0120] The terms used throughout this specification and the entire scope of the claims should be construed as "non-limiting" terms unless otherwise specified. For example, the terms "comprising" or "included" should be construed as not being limited to those described as being included. The term "having" should be construed as not being limited to those described as having. Also, the indefinite article "a" should be construed as meaning "at least one" or "one or more". Also, the term "at least one of A, B, and C" should be construed as "A", "B", "C", "A + B", "A + C", "B + C", or "A + B + C". Furthermore, it should be construed as including combinations with things other than "A", "B", and "C".

Claims

1. A target substance supply device used in an extreme ultraviolet light generation device that generates extreme ultraviolet light by converting a target substance into plasma by irradiating the target substance with pulsed laser light, comprising: a first container for accommodating a solid target substance; a first path through which the solid target substance supplied from the first container passes; a first supply switching device capable of switching between a first state that suppresses the supply of the solid target substance from the first container to the first path and a second state that allows the supply of the solid target substance from the first container to the first path; a first valve connected to the first path; a second path connected to the first valve and through which the solid target substance that has passed through the first valve passes; a first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path; a second container connected to the second path and for accommodating the solid target substance that has passed through the second path; a third path connected to the second container and through which the solid target substance supplied from the second container passes; a second supply switching device capable of switching between a third state that suppresses the supply of the solid target substance from the second container to the third path and a fourth state that allows the supply of the solid target substance from the second container to the third path; a second detector that outputs a second detection signal indicating that the solid target substance is clogged in the third path; a processor that controls the first supply switching device to the first state based on the first detection signal and controls the first supply switching device to the first state based on the second detection signal; A target substance supply device comprising the above.

2. The target substance supply device according to claim 1, further comprising: a first vibration device for vibrating the second path; wherein the processor operates the first vibration device based on the first detection signal. A target substance supply device.

3. The target substance supply device according to claim 1, further comprising: a first vibration device for vibrating the second path; wherein the first detector and the first vibration device are arranged opposite to each other with the second path therebetween. A target substance supply device.

4. The target substance supply device according to claim 1, further comprising: a second vibration device for vibrating the third path. The processor operates the second vibration device based on the second detection signal. Target substance supply device. **Claim 5** The target substance supply device according to claim 1, a second valve connected to the third path; a fourth path connected to the second valve and through which the solid target substance passing through the second valve passes; a third detector that outputs a third detection signal indicating that the solid target substance is clogged in the fourth path; further comprising, wherein the processor controls the first supply switching device to the first state based on the third detection signal. Target substance supply device. **Claim 6** The target substance supply device according to claim 5, the processor identifies a path in which the solid target substance is clogged among the second to fourth paths based on the first to third detection signals, and outputs a signal indicating the identified result. Target substance supply device. **Claim 7** The target substance supply device according to claim 5, further comprising a third vibration device that vibrates the fourth path, wherein the processor operates the third vibration device based on the third detection signal. Target substance supply device. **Claim 8** The target substance supply device according to claim 5, a pair of first joints located in the first path between the first supply switching device and the first valve; a pair of second joints located in the second path between the first detector and the second container; further comprising the first valve and the first detector located between the first and second joints are integrally removably configured. Target substance supply device. **Claim 9** The target substance supply device according to claim 8, a pair of third joints located in the second path between the second joint and the second container; a pair of fourth joints located in the third path between the second detector and the second valve; further comprising the second container and the second detector located between the third and fourth joints are integrally removably configured. Target substance supply device. **Claim 10** The target substance supply device according to claim 9, a pair of fifth joints located in the third path between the fourth joint and the second valve; a pair of sixth joints located in the fourth path on the downstream side of the third detector; further comprising The second valve and the third detector located between the fifth and sixth joints are integrally removably configured, Target substance supply device.

11. The target substance supply device according to claim 1, The second path includes a metal pipe, The solid target substance is metal, The first detector is located outside the metal pipe, configured to generate eddy currents in the metal pipe and its interior and detect the eddy currents, Target substance supply device.

12. The target substance supply device according to claim 1, The second path includes a metal pipe, The first detector is configured to detect the capacitance between the solid target substance inside the metal pipe through holes formed in the metal pipe, Target substance supply device.

13. The target substance supply device according to claim 1, The second path includes a metal pipe, The first detector includes a first and a second window respectively disposed on opposite wall surfaces of the metal pipe, a light source for injecting detection light into the interior of the metal pipe through the first window, and a light sensor for detecting light emitted to the outside of the metal pipe through the second window, Target substance supply device.

14. The target substance supply device according to claim 1, The second path includes a metal pipe, The first detector includes a first and a second optical fiber respectively penetrating the opposite wall surfaces of the metal pipe, a light source for injecting detection light into the interior of the metal pipe through the first optical fiber, and a light sensor for detecting light emitted to the outside of the metal pipe through the second optical fiber, Target substance supply device.

15. A first container for containing a solid target substance, A first path through which the solid target substance supplied from the first container passes, A first supply switching device capable of switching between a first state for suppressing the supply of the solid target substance from the first container to the first path and a second state for allowing the supply of the solid target substance from the first container to the first path, A first valve connected to the first path, A second path connected to the first valve and through which the solid target substance passing through the first valve passes, A first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path, A processor that controls the first supply switching device to the first state based on the first detection signal; A target substance supply device comprising; A third container that melts the solid target substance supplied by the target substance supply device to generate a molten target substance; A nozzle that outputs the molten target substance; A laser device that irradiates the pulsed laser light to the molten target substance output from the nozzle and reaching a predetermined area; An EUV condenser mirror that condenses the extreme ultraviolet light emitted from the plasma generated in the predetermined area; An extreme ultraviolet light generation device comprising; Based on the first detection signal, the processor exhausts a part of the gas inside the third container to suppress the output of the molten target substance from the nozzle. Extreme ultraviolet light generation device.

16. The extreme ultraviolet light generation device according to claim 15, wherein The target substance supply device further comprises a first vibration device that vibrates the second path, Based on the first detection signal, the processor operates the first vibration device. Extreme ultraviolet light generation device.

17. The extreme ultraviolet light generation device according to claim 15, wherein The target substance supply device further comprises a first vibration device that vibrates the second path, The first detector and the first vibration device are arranged to face each other with the second path therebetween. Extreme ultraviolet light generation device.

18. The extreme ultraviolet light generation device according to claim 15, wherein The target substance supply device A second container connected to the second path and containing the solid target substance that has passed through the second path; A third path connected to the second container and through which the solid target substance supplied from the second container passes; A second supply switching device capable of switching between a third state that suppresses the supply of the solid target substance from the second container to the third path and a fourth state that allows the supply of the solid target substance from the second container to the third path; A second detector that outputs a second detection signal indicating that the solid target substance is clogged in the third path; Further comprising The processor Based on the second detection signal, controls the first supply switching device to the first state. Extreme ultraviolet light generation device.

19. The extreme ultraviolet light generation device according to claim 18, wherein The target substance supply device further includes a second vibration device that vibrates the third path. The processor operates the second vibration device based on the second detection signal. Extreme ultraviolet light generating device.

20. An extreme ultraviolet light generating device according to claim 18, wherein the target substance supply device includes a second valve connected to the third path, a fourth path connected to the second valve and through which the solid target substance that has passed through the second valve passes, and a third detector that outputs a third detection signal indicating that the solid target substance is clogged in the fourth path. The target substance supply device further includes The processor controls the first supply switching device to the first state based on the third detection signal. Extreme ultraviolet light generating device.

21. An extreme ultraviolet light generating device according to claim 20, wherein the processor identifies the path in which the solid target substance is clogged among the second to fourth paths based on the first to third detection signals, and outputs a signal indicating the identified result. Extreme ultraviolet light generating device.

22. An extreme ultraviolet light generating device according to claim 20, wherein the target substance supply device further includes a third vibration device that vibrates the fourth path, and the processor operates the third vibration device based on the third detection signal. Extreme ultraviolet light generating device.

23. An extreme ultraviolet light generating device according to claim 20, wherein the target substance supply device includes a pair of first joints located in the first path between the first supply switching device and the first valve, and a pair of second joints located in the second path between the first detector and the second container. The target substance supply device further includes wherein the first valve and the first detector located between the first and second joints are integrally removably configured. Extreme ultraviolet light generating device.

24. An extreme ultraviolet light generating device according to claim 23, wherein the target substance supply device includes a pair of third joints located in the second path between the second joint and the second container, and a pair of fourth joints located in the third path between the second detector and the second valve. The target substance supply device further includes wherein the second container and the second detector located between the third and fourth joints are integrally removably configured. Extreme ultraviolet light generating device.

25. An extreme ultraviolet light generating device according to claim 24, The target substance supply device is a pair of fifth joints located in the third path between the fourth joint and the second valve, a pair of sixth joints located in the fourth path downstream of the third detector, further comprising the second valve and the third detector located between the fifth and sixth joints are integrally removably configured, an extreme ultraviolet light generating device. **Claim 26** The extreme ultraviolet light generating device according to claim 15, wherein the second path includes a metal pipe, the solid target substance is a metal, the first detector is located outside the metal pipe, configured to generate eddy currents in the metal pipe and its interior and detect the eddy currents, an extreme ultraviolet light generating device. **Claim 27** The extreme ultraviolet light generating device according to claim 15, wherein the second path includes a metal pipe, the first detector is configured to detect the capacitance between the solid target substance inside the metal pipe through a hole formed in the metal pipe, an extreme ultraviolet light generating device. **Claim 28** The extreme ultraviolet light generating device according to claim 15, wherein the second path includes a metal pipe, the first detector includes a first and a second window respectively disposed on opposite wall surfaces of the metal pipe, a light source for incident detecting light into the interior of the metal pipe through the first window, and a light sensor for detecting the light exiting to the outside of the metal pipe through the second window, an extreme ultraviolet light generating device. **Claim 29** The extreme ultraviolet light generating device according to claim 15, wherein the second path includes a metal pipe, the first detector includes a first and a second optical fiber respectively penetrating the opposite wall surfaces of the metal pipe, a light source for incident detecting light into the interior of the metal pipe through the first optical fiber, and a light sensor for detecting the light exiting to the outside of the metal pipe through the second optical fiber, an extreme ultraviolet light generating device. **Claim 30** A first container for containing a solid target substance, a first path through which the solid target substance supplied from the first container passes, a first supply switching device capable of switching between a first state for suppressing the supply of the solid target substance from the first container to the first path and a second state for allowing the supply of the solid target substance from the first container to the first path, a first valve connected to the first path, A second path that is connected to the first valve and through which the solid target substance that has passed through the first valve passes, A first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path, A processor that controls the first supply switching device to the first state based on the first detection signal, A target substance supply device comprising: A third container that melts the solid target substance supplied by the target substance supply device to generate a molten target substance, A nozzle that outputs the molten target substance, A laser device that irradiates the molten target substance output from the nozzle and reaching a predetermined region with pulsed laser light, An EUV condenser mirror that condenses extreme ultraviolet light emitted from the plasma generated in the predetermined region, An extreme ultraviolet light generation device comprising: The target substance supply device further comprises a first vibration device that vibrates the second path, Based on the first detection signal, the processor operates the first vibration device and stops the irradiation of pulsed laser light by the laser device, Extreme ultraviolet light generation device.

31. A method for manufacturing an electronic device, A first container that houses a solid target substance, A first path through which the solid target substance supplied from the first container passes, A first supply switching device capable of switching between a first state that suppresses the supply of the solid target substance from the first container to the first path and a second state that allows the supply of the solid target substance from the first container to the first path, A first valve connected to the first path, A second path that is connected to the first valve and through which the solid target substance that has passed through the first valve passes, A first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path, A second container that is connected to the second path and houses the solid target substance that has passed through the second path, A third path that is connected to the second container and through which the solid target substance supplied from the second container passes, A second supply switching device capable of switching between a third state that suppresses the supply of the solid target substance from the second container to the third path and a fourth state that allows the supply of the solid target substance from the second container to the third path, A second detector that outputs a second detection signal indicating that the solid target substance is clogged in the third path; A processor that controls the first supply switching device to the first state based on the first detection signal and controls the first supply switching device to the first state based on the second detection signal; A target substance supply device comprising: A reservoir that melts the solid target substance supplied by the target substance supply device to generate a molten target substance; A nozzle that outputs the molten target substance; A laser device that irradiates the molten target substance output from the nozzle and reaching a predetermined region with pulsed laser light; An EUV condenser mirror that condenses extreme ultraviolet light emitted from the plasma generated in the predetermined region; Generating extreme ultraviolet light by an extreme ultraviolet light generating device comprising: Outputting the extreme ultraviolet light to an exposure device; Exposing the photosensitive substrate to extreme ultraviolet light in the exposure device in order to manufacture an electronic device A method for manufacturing an electronic device, including this.

32. A method for manufacturing an electronic device, comprising: A first container that houses a solid target substance; A first path through which the solid target substance supplied from the first container passes; A first supply switching device capable of switching between a first state that suppresses the supply of the solid target substance from the first container to the first path and a second state that allows the supply of the solid target substance from the first container to the first path; A first valve connected to the first path; A second path connected to the first valve and through which the solid target substance that has passed through the first valve passes; A first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path; A processor that controls the first supply switching device to the first state based on the first detection signal; A target substance supply device comprising: A third container that melts the solid target substance supplied by the target substance supply device to generate a molten target substance; A nozzle that outputs the molten target substance; A laser device that irradiates the molten target substance output from the nozzle and reaching a predetermined region with pulsed laser light; An EUV condenser mirror that condenses extreme ultraviolet light emitted from the plasma generated in the predetermined region; comprising, wherein the processor generates extreme ultraviolet light by an extreme ultraviolet light generating device that exhausts a part of the gas inside the third container based on the first detection signal to suppress the output of the molten target substance from the nozzle, outputs the extreme ultraviolet light to an exposure device, exposes the photosensitive substrate to the extreme ultraviolet light in the exposure device to manufacture an electronic device A method for manufacturing an electronic device, including this.

33. A method for manufacturing an electronic device, a first container that houses a solid target substance, a first path through which the solid target substance supplied from the first container passes, a first supply switching device capable of switching between a first state that suppresses the supply of the solid target substance from the first container to the first path and a second state that allows the supply of the solid target substance from the first container to the first path, a first valve connected to the first path, a second path connected to the first valve and through which the solid target substance that has passed through the first valve passes, a first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path, a processor that controls the first supply switching device to the first state based on the first detection signal, a first vibration device that vibrates the second path, a target substance supply device comprising, a third container that melts the solid target substance replenished by the target substance supply device to generate a molten target substance, a nozzle that outputs the molten target substance, a laser device that irradiates the molten target substance output from the nozzle and reaching a predetermined area with pulsed laser light, an EUV condenser mirror that condenses the extreme ultraviolet light emitted from the plasma generated in the predetermined area, comprising, wherein the processor generates extreme ultraviolet light by an extreme ultraviolet light generating device that operates the first vibration device and stops the irradiation of the pulsed laser light by the laser device based on the first detection signal, outputs the extreme ultraviolet light to an exposure device, exposes the photosensitive substrate to the extreme ultraviolet light in the exposure device to manufacture an electronic device A method for manufacturing an electronic device, including this.

34. A method for manufacturing an electronic device, a first container that houses a solid target substance, a first path through which the solid target substance supplied from the first container passes, A first supply switching device capable of switching between a first state that suppresses the supply of the solid target substance from the first container to the first path and a second state that allows the supply of the solid target substance from the first container to the first path; A first valve connected to the first path; A second path connected to the first valve and through which the solid target substance that has passed through the first valve passes; A first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path; A second container connected to the second path and that houses the solid target substance that has passed through the second path; A third path connected to the second container and through which the solid target substance supplied from the second container passes; A second supply switching device capable of switching between a third state that suppresses the supply of the solid target substance from the second container to the third path and a fourth state that allows the supply of the solid target substance from the second container to the third path; A second detector that outputs a second detection signal indicating that the solid target substance is clogged in the third path; A processor that controls the first supply switching device to the first state based on the first detection signal and controls the first supply switching device to the first state based on the second detection signal; A target substance supply device comprising; A reservoir that melts the solid target substance replenished by the target substance supply device to generate a molten target substance; A nozzle that outputs the molten target substance; A laser device that irradiates pulsed laser light onto the molten target substance output from the nozzle and reaching a predetermined region; An EUV condenser mirror that condenses extreme ultraviolet light emitted from the plasma generated in the predetermined region; Inspecting for defects in the mask by irradiating the mask with the extreme ultraviolet light generated by an extreme ultraviolet light generating device comprising; Selecting a mask using the result of the inspection; Exposure-transferring the pattern formed on the selected mask onto a photosensitive substrate A method for manufacturing an electronic device, including this.

35. A method for manufacturing an electronic device, comprising: A first container that houses a solid target substance; A first path through which the solid target substance supplied from the first container passes; A first supply switching device capable of switching between a first state that suppresses the supply of the solid target substance from the first container to the first path and a second state that allows the supply of the solid target substance from the first container to the first path; A first valve connected to the first path; A second path connected to the first valve and through which the solid target substance that has passed through the first valve passes; A first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path; A processor that controls the first supply switching device to the first state based on the first detection signal; A target substance supply device comprising: A third container that melts the solid target substance supplied by the target substance supply device to generate a molten target substance; A nozzle that outputs the molten target substance; A laser device that irradiates the molten target substance output from the nozzle and reaching a predetermined region with pulsed laser light; An EUV condenser mirror that condenses extreme ultraviolet light emitted from the plasma generated in the predetermined region; The processor, based on the first detection signal, exhausts a part of the gas inside the third container and irradiates a mask with extreme ultraviolet light generated by an extreme ultraviolet light generation device that suppresses the output of the molten target substance from the nozzle to inspect for defects in the mask. Selects a mask using the result of the inspection; Exposes and transfers the pattern formed on the selected mask onto a photosensitive substrate. A method for manufacturing an electronic device, including the above. **Claim 36**: A method for manufacturing an electronic device, comprising: A first container that houses a solid target substance; A first path through which the solid target substance supplied from the first container passes; A first supply switching device capable of switching between a first state that suppresses the supply of the solid target substance from the first container to the first path and a second state that allows the supply of the solid target substance from the first container to the first path; A first valve connected to the first path; A second path connected to the first valve and through which the solid target substance that has passed through the first valve passes; A first detector that outputs a first detection signal indicating that the solid target substance is clogged in the second path; A processor that controls the first supply switching device to the first state based on the first detection signal; A first vibration device that vibrates the second path; A target substance supply device comprising; A third container that melts the solid target substance supplied by the target substance supply device to generate a molten target substance; A nozzle that outputs the molten target substance; A laser device that irradiates the molten target substance output from the nozzle and reaching a predetermined area with pulsed laser light; An EUV condenser mirror that condenses extreme ultraviolet light emitted from the plasma generated in the predetermined area; Comprising, the processor operates the first vibration device based on the first detection signal, and irradiates a mask with extreme ultraviolet light generated by an extreme ultraviolet light generation device that stops the irradiation of pulsed laser light by the laser device to inspect for defects in the mask; Selects a mask using the result of the inspection; Exposes and transfers the pattern formed on the selected mask onto a photosensitive substrate A method for manufacturing an electronic device, including this.

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