Substrate processing apparatus and substrate processing method

Abstract

To suppress the occurrence of a malfunction due to the temperature of a ring member in substrate processing using a substrate processing device having the ring member surrounding the periphery of a placement surface of a placement table.SOLUTION: A substrate processing device for processing a substrate comprises: a processing chamber in which the substrate is processed; a chamber wall part which constitutes the processing chamber; a placement table which is installed in the processing chamber and has a placement surface on which the substrate is placed; a ring member which is arranged in a manner to surround the outer periphery of the placement surface; a first channel which is provided in a constitution member of the substrate processing device other than the ring member and in which a temperature control medium circulates; and a second channel which is provided in the ring member and is connected to the first channel such that the fluid can circulate.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus that is disposed in a processing container facing a mounting table on which a substrate is mounted and has a shower head that ejects a processing gas. In this substrate processing apparatus, flow paths are formed in a base member of the shower head, a side wall portion of a container body of the processing container, and the mounting table, respectively, and a fluidity heat medium having a temperature set for each of the flow paths is circulated from a chiller unit individually.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure suppresses the occurrence of problems caused by the temperature of a ring member in substrate processing using a substrate processing apparatus including a ring member that surrounds the periphery of a mounting surface of a mounting table.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, including a processing chamber in which the substrate is processed, a chamber wall portion constituting the processing chamber, a mounting table installed inside the processing chamber and having a mounting surface on which the substrate is mounted, a ring member disposed surrounding the outer periphery of the mounting surface, a first flow path provided inside a component member of the substrate processing apparatus other than the ring member and through which a temperature control medium flows, and a second flow path provided inside the ring member and fluidly connected to the first flow path.

Advantages of the Invention

[0006] According to the present disclosure, in substrate processing using a substrate processing apparatus including a ring member surrounding the periphery of the mounting surface of the mounting table, it is possible to suppress the occurrence of defects caused by the temperature of the ring member.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

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Figure 8

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Figure 10

Figure 11

Figure 12

Modes for Carrying Out the Invention

[0008] In the manufacturing process of flat panel displays (FPDs) such as liquid crystal display devices (LCDs), substrate processing such as etching processing and film forming processing is performed on a substrate such as a glass substrate. These substrate processes are performed in a state where the substrate is placed on the upper surface, that is, the placement surface, of the mounting table in the processing container.

[0009] Further, in order to obtain good and uniform plasma processing results between the central portion and the peripheral portion of the substrate, an annular member, that is, a ring member, that surrounds the periphery of the mounting surface of the mounting table in a plan view may be mounted.

[0010] However, when using a ring member, problems may occur depending on the temperature of the ring member. For example, when etching processing is performed using a ring member, reaction products may accumulate on the ring member, and the reaction products may scatter during substrate replacement or the like, contaminating the substrate surface and the inside of the processing container.

[0011] Therefore, the technology according to the present disclosure suppresses the occurrence of problems caused by the temperature of the ring member in substrate processing using a substrate processing apparatus including a ring member.

[0012] Hereinafter, the substrate processing apparatus and the substrate processing method according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0013] <Plasma processing apparatus 1> FIG. 1 and FIG. 2 are respectively a longitudinal sectional view and a transverse sectional view showing an outline of the configuration of a plasma processing apparatus as a substrate processing apparatus according to the present embodiment. FIG. 3 is a partially enlarged view of FIG. 1. The plasma processing apparatus 1 shown in FIGS. 1 and 2 performs plasma processing using the plasma of a processing gas on a rectangular glass substrate G (hereinafter referred to as "substrate G") as a substrate. The plasma processing performed by the plasma processing apparatus 1 is, for example, etching processing, film forming processing, ashing processing, etc. for FPDs. By these processes, electronic devices such as light emitting elements and drive circuits of light emitting elements are formed on the substrate G.

[0014] The plasma processing apparatus 1 includes a container body 10 that forms a part of a processing container in which a substrate is processed inside. The container body 10 is formed in a bottomed rectangular tube shape from a conductive material (for example, aluminum) and is electrically grounded. The container body 10 has side wall portions 10a that constitute each side surface of the rectangular tube shape and a bottom wall portion 10b that constitutes the bottom surface. Since corrosive gases are often used for plasma processing, the inner wall surface of the container body 10 may be subjected to a corrosion-resistant coating process such as anodizing treatment for the purpose of improving corrosion resistance. Also, an opening is formed in the upper surface of the container body 10. This opening is hermetically sealed by a rectangular metal window 20 provided so as to be insulated from the container body 10. Specifically, it is hermetically sealed by the metal window 20 and a metal frame 15 described later. The space surrounded by the container body 10, the metal frame 15, and the metal window 20 becomes a processing space K1 where the substrate G to be processed by plasma processing is located during plasma processing, and the space above the metal window 20 becomes an antenna chamber K2 where a high-frequency antenna (plasma antenna) 90 described later is disposed.

[0015] On the side wall portion 10a on the negative X direction side (the left side in FIG. 2) of the container body 10, a carry-in / out port 11 for carrying the substrate G in and out of the processing space K1 and a gate valve 12 for opening and closing the carry-in / out port 11 are provided.

[0016] Also, as shown in FIG. 1, inside each side wall portion 10a and bottom wall portion 10b of the container body 10, a flow path 13 through which a temperature control medium flows is provided. The flow path 13 is used to adjust the temperature of the container body 10 and prevent reaction products from adhering to the inner peripheral surface of the container body 10.

[0017] On the bottom wall portion 10b of the container body 10, a mounting table 30 is provided so as to face the metal window 20. The mounting table 30 has a table body 31 whose upper surface serves as a mounting surface 31a on which the substrate G is mounted.

[0018] The table body 31 is formed in a rectangular shape in plan view from a conductive material (such as aluminum, stainless steel, etc.). The surface of the table body 31 may be subjected to a coating treatment such as anodizing treatment or ceramic spraying treatment in order to improve insulation and corrosion resistance. The table body 31 is installed on the bottom wall portion 10b of the container body 10 via legs 32 formed of an insulating material (such as PTFE (polytetrafluoroethylene), alumina, yttria, etc.). Further, the substrate G placed on the table body 31 is adsorbed and held by an electrostatic chuck (not shown) provided in the mounting table 30.

[0019] Furthermore, inside the table body 31, a flow path 31b through which a temperature control medium flows is provided. The flow path 31b is used to adjust the temperature of the table body 31 and to adjust the temperature of the substrate G placed on the mounting surface 31a.

[0020] Also, a high-frequency power supply 41 is connected to the table body 31 via a matcher 40. The high-frequency power supply 41 supplies high-frequency power for bias, for example, high-frequency power with a frequency of 3.2 MHz, to the table body 31. Thereby, ions in the plasma generated in the processing space K1 can be drawn into the substrate G.

[0021] Also, around the mounting table 30, a shield ring 50 is provided as a ring member that surrounds the mounting surface 31a. The shield ring 50 is for the purpose of forming plasma uniformly above the mounting table 30 and is formed of an insulating material (such as ceramics like alumina and yttria).

[0022] As shown in FIG. 2, the shield ring 50 is divided into, for example, four divided members 101 to 104, and is formed in an annular shape that is slightly larger than the mounting surface 31a in plan view as a whole. Further, as shown in FIG. 1, an insulating ring 51 made of an insulating material (for example, PTFE (polytetrafluoroethylene), alumina, yttria, etc.) is provided so as to surround the side surface of the mounting table 30 (specifically, the lower side surface of the mounting table 30) and the side surface of the leg portion 32, and the shield ring 50 is placed on the upper surface of the insulating ring 51. The insulating ring 51 is supported by the bottom wall portion 10b of the container body 10. That is, the shield ring 50 is installed on the bottom wall portion 10b of the container body 10 via the insulating ring 51.

[0023] Inside the shield ring 50, a flow path 50a through which a temperature control medium flows is provided. The flow path 50a is used to adjust the temperature of the shield ring 50. In this example, as schematically shown by a dotted line in FIG. 3, the flow path 50a is fluidly connected to a flow path 13 provided inside the container body 10. That is, in this example, a temperature control fluid for adjusting the temperature of the container body 10 flows through the flow path 50a of the shield ring 50.

[0024] Also, in the example of the figure, the mounting surface 31a is smaller than the substrate G, and the peripheral portion of the substrate G protrudes from the mounting surface 31a and overlaps with the inner peripheral portion of the shield ring 50 in plan view. And the upper surface 50b of the inner peripheral portion of the shield ring 50 is located below the mounting surface 31a so as not to be in contact with the back surface of the substrate G. The distance between the upper surface 50b of the inner peripheral portion of the shield ring 50 and the mounting surface 31a is, for example, 0.1 mm to 0.3 mm. In addition, in the portion where the base body 31 of the mounting table 30 and the shield ring 50 are in the vertical direction, the distance between the outer peripheral surface of the base body 31 of the mounting table 30 and the inner peripheral surface of the shield ring 50 is, for example, 0 mm to 0.1 mm.

[0025] The shield ring 50 may be integrated with the insulating ring 51. Also, the insulating ring 51 and the leg portion 32 may be integrated.

[0026] A more specific configuration of the shield ring 50 will be described later.

[0027] Furthermore, as shown in FIG. 1, an exhaust port 14 is formed in the bottom wall portion 10b of the container body 10. A plurality of exhaust ports 14 are provided. For example, as shown in FIG. 2, one exhaust port 14 is provided at the center of each long side portion of the mounting table 30 having a rectangular shape in plan view. As shown in FIG. 1, an exhaust unit 60 having a vacuum pump or the like is connected to the exhaust port 14. The processing space K1 is depressurized by this exhaust unit 60. The exhaust unit 60 may be provided for each of the plurality of exhaust ports 14, or may be provided in common for the plurality of exhaust ports 14. Note that the position and number of the exhaust ports 14 are not limited to the example in the figure.

[0028] Also, in the processing container, a baffle plate B (see FIG. 5) is provided so as to cover the gap between the container body 10 and the mounting table 30 from above. The baffle plate B can separate the processing space (plasma processing space) K1 where plasma is formed and the non-plasma processing space where plasma is not formed and located below it.

[0029] On the upper surface of the side wall portion 10a of the container body 10, a metal frame 15 which is a rectangular frame formed of a metal material such as aluminum is provided. A seal member 16 for keeping the processing space K1 airtight is provided between the container body 10 and the metal frame 15. Further, in the present embodiment, the container body 10, the metal frame 15, and the metal window 20 constitute a processing container that can be depressurized and in which a substrate is processed inside. That is, the metal frame 15 and the metal window 20 constitute the top plate portion of the processing container.

[0030] The metal window 20 is formed, for example, in a rectangular shape in plan view. The metal window 20 also functions as a shower head for supplying a processing gas to the processing space K1. For example, a plurality of gas discharge holes 21 for discharging the processing gas downward and a diffusion chamber 22 for diffusing the processing gas are formed in the metal window 20, and the gas discharge holes 21 and the diffusion chamber 22 communicate with each other.

[0031] The diffusion chamber 22 is connected to the processing gas supply unit 71 via the gas supply pipe 70. The processing gas supply unit 71 includes a flow rate adjustment valve (not shown), an on-off valve (not shown), etc., and supplies the processing gas necessary for etching processing, film formation processing, ashing processing, etc. to the diffusion chamber 22.

[0032] Also, inside the metal window 20, a flow path 23 through which a temperature control medium flows is provided. The flow path 23 is used to adjust the temperature of the metal window 20. By adjusting the temperature of the metal window 20, it is possible to adjust the temperature of the processing gas supplied to the processing space K1, etc. Note that the metal window 20 is electrically insulated from the metal frame 15 by the insulating member 24.

[0033] The space surrounded by the above-described metal window 20, side wall portion 81, and top plate portion 80 constitutes the antenna chamber K2, and inside the antenna chamber K2, a high-frequency antenna 90 is disposed so as to face the metal window 20.

[0034] The high-frequency antenna 90 is disposed at a distance from the metal window 20 via a spacer (not shown) formed of an insulating material, for example.

[0035] The high-frequency antenna 90 is connected to a high-frequency power source 43 via a matcher 42. The high-frequency antenna 90 is supplied with high-frequency power of, for example, 13.56 MHz from the high-frequency power source 43 via the matcher 42. Thereby, an induced electric field is formed inside the processing space K1 during plasma processing, and the processing gas discharged from the gas discharge hole 21 is plasmaized by the induced electric field.

[0036] Furthermore, the plasma processing apparatus 1 is provided with a control unit U. The control unit U is a computer including a processor such as a CPU and a memory, and has a program storage unit (not shown). A program for controlling the processing of the substrate G in the plasma processing apparatus 1 is stored in the program storage unit. The above-mentioned program may be recorded on a non-transitory computer-readable storage medium and installed from the storage medium into the control unit U. Part or all of the program may be realized by dedicated hardware (circuit board).

[0037] <Shield ring 50> FIG. 4 is a cross-sectional view of the shield ring 50. FIG. 5 is a side view of the dividing member 101. As shown in FIG. 4, the shield ring 50 has four dividing members 101 to 104. The dividing members 101 to 104 are provided along each side of the rectangular mounting surface 31a of the mounting table 30 in a plan view.

[0038] The dividing member 101 is provided so as to extend in the Y direction along the positive X-direction side of the mounting surface 31a. Inside the dividing member 101, a flow path 101a is provided so as to extend in the Y direction. An introduction hole 101b for the temperature-controlled fluid is provided at the negative Y-direction end of the flow path 101a. The dividing member 102 is provided so as to extend in the X direction along the negative Y-direction side of the mounting surface 31a. Inside the dividing member 102, a flow path 102a is provided so as to extend in the X direction. The dividing member 103 is provided so as to extend in the Y direction along the negative X-direction side of the mounting surface 31a. Inside the dividing member 103, a flow path 103a is provided so as to extend in the Y direction. A discharge hole 103b for the temperature-controlled fluid is provided at the positive Y-direction end of the flow path 103a. The dividing member 104 is provided so as to extend in the X direction along the positive Y-direction side of the mounting surface 31a. Inside the dividing member 104, a flow path 104a is provided so as to extend in the X direction.

[0039] The dividing member 101 and the dividing member 102 are fixed to each other such that the negative Y-direction end of the flow path 101a communicates with the positive X-direction end of the flow path 102a. The dividing member 102 and the dividing member 103 are fixed to each other such that the negative X-direction end of the flow path 102a communicates with the negative Y-direction end of the flow path 103a. The dividing member 103 and the dividing member 104 are fixed to each other such that the positive Y-direction end of the flow path 103a communicates with the negative X-direction end of the dividing member 104. The dividing member 104 and the dividing member 101 are fixed to each other such that the positive X-direction end of the flow path 104a communicates with the positive Y-direction end of the flow path 101a.

[0040] By fixing as described above, the temperature control fluid flow path 50a of the shield ring 50 has the following two flow paths. (1) A flow path from the introduction hole 101b, through the positive Y-direction end of the flow paths 101a, 104a, and 103a, and reaching the discharge hole 103b (2) A flow path from the introduction hole 101b, through the negative Y-direction end of the flow path 101a, the flow paths 102a and 103a, and reaching the discharge hole 103b

[0041] Note that the flow paths 101a to 104a, the introduction hole 101b, and the discharge hole 103b of each of the dividing members 101 to 104 are formed, for example, by gun drilling. Further, the flow paths 101a to 104a of each of the dividing members 101 to 104 may be formed by integrating a member having a recess forming one side of the flow paths 101a to 104a and a member having a recess forming the other side of the flow paths 101a to 104a by joining or the like. By manufacturing each of the dividing members 101 to 104 using 3D printing technology, flow paths and the like may be formed.

[0042] In the shield ring 50, the fixing between the dividing members 101 to 104 is performed using a screw N (see FIG. 5) via a seal member 110 such as an O-ring that seals the flow path 50a. Note that the screw hole through which the screw N is inserted is formed to extend in the horizontal direction (X direction) so that the screw N is not exposed to the plasma processing space K1.

[0043] Also, the end portion of the dividing member 101 on the negative Y-axis side is provided so as to protrude outside (on the negative Y-axis side) of the dividing member 102. As shown in FIG. 5, the end portion of the dividing member 102 on the negative Y-axis side protrudes outside (on the negative Y-axis side) of the insulating ring 51, and an introduction hole 101b for the temperature control fluid is provided below it. The introduction hole 101b is connected to a chiller unit 200 (see FIG. 6 described later) outside the processing container via a connection pipe 120. The temperature control fluid from the chiller unit 200 is supplied to the introduction hole 101b via the bottom wall portion 10b of the container body 10 and the connection pipe 120.

[0044] As shown in FIG. 4, the end portion of the dividing member 103 on the positive Y-axis side, which is located diagonally to the end portion of the dividing member 101 on the negative Y-axis side, is provided so as to protrude outside (on the positive Y-axis side) of the dividing member 104. Although not shown, the end portion of the dividing member 103 on the positive Y-axis side protrudes outside (on the positive Y-axis side) of the insulating ring 51, similar to the end portion of the dividing member 101 on the negative Y-axis side, and a discharge hole 103b for the temperature control fluid is provided below it. Also, the discharge hole 103b is connected to the chiller unit (see FIG. 6 described later) 200 outside the processing container via a connection pipe (not shown), similar to the introduction hole 101b. The temperature control fluid discharged from the discharge hole 103b is returned to the chiller unit 200 via the connection pipe and the bottom wall portion 10b of the container body 10.

[0045] Also, the end portion of the dividing member 101 on the positive Y-axis side also protrudes outside (on the positive Y-axis side) of the dividing member 104 and the insulating ring 51, and the end portion of the dividing member 103 on the negative Y-axis side also protrudes outside (on the negative Y-axis side) of the dividing member 102 and the insulating ring 51, respectively. However, the introduction hole 101b and the discharge hole 103b are not provided at the end portion of the dividing member 101 on the positive Y-axis side and the end portion of the dividing member 103 on the negative Y-axis side.

[0046] In this way, the end portions without the introduction holes 101b and the discharge holes 103b also protrude outside the dividing members 102 and 104 and the insulating ring 51. Therefore, the shape of the shield ring 50 is symmetric with respect to the X direction centered on the center in the X direction and symmetric with respect to the Y direction centered on the center in the Y direction in a plan view as a whole. Therefore, when the portion outside the insulating ring 51 in the shield ring 50 is asymmetric, the influence on the plasma in the plasma processing space K1 can be suppressed.

[0047] Note that the connection pipe 120 connected to the introduction hole 101b is located in the space below the baffle plate B, that is, the non-plasma formation space, as shown in FIG. 5. The same applies to the connection pipe (not shown) connected to the discharge hole 103b. Therefore, these connection pipes do not adversely affect the plasma in the plasma processing space K1.

[0048] <Temperature control fluid supply system> FIG. 6 is a schematic diagram showing the configuration of the temperature control fluid supply system in the plasma processing apparatus 1.

[0049] As shown in FIG. 6, the plasma processing apparatus 1 has a flow path 13 in the aforementioned container body 10, a flow path 31b in the mounting table 30, and a flow path 23 in a metal window (hereinafter sometimes referred to as a shower head) 20 that functions as a shower head.

[0050] The flow path 13, the flow path 31b, and the flow path 23 are each connected to a chiller unit 200 provided outside the processing container via a pipe (not shown), and the temperature control fluid is circulated and supplied individually. The temperature control fluid is, for example, a fluorine-based fluid. The temperature and flow rate of the temperature control fluid circulated and supplied from the chiller unit 200 to the flow path 13, the flow path 31b, and the flow path 23 are controlled by the control unit U (see FIG. 1). Further, the temperature control fluid circulated and supplied from the chiller unit 200 to the flow path 13, the temperature control fluid circulated and supplied to the flow path 31b, and the temperature control fluid circulated and supplied to the flow path 23 are each independently temperature-controlled. The chiller unit 200 may be provided in common for the flow path 13, the flow path 31b, and the flow path 23, or may be provided individually.

[0051] Also, as described above, the flow path 13 is fluidly connected to the flow path 50a provided in the shield ring 50. For example, the flow path 13 and the flow path 50a are fluidly connected in series to form a circulation path for one temperature-controlled fluid. That is, the temperature-controlled fluid for the flow path 13 of the container body 10 is circulated and supplied to the flow path 50a of the shield ring 50.

[0052] <Substrate processing> Next, the substrate processing in the plasma processing apparatus 1 will be described. First, the gate valve 12 is opened, and the substrate G is carried into the processing container through the carry-in outlet 11 and placed on the mounting table 30. Then, the gate valve 12 is closed.

[0053] Subsequently, the processing gas is supplied from the processing gas supply unit 71 into the processing space K1 through the metal window 20. Also, the processing space K1 is exhausted by the exhaust unit 60, and the inside of the processing space K1 is adjusted to a desired pressure.

[0054] Next, high-frequency power is supplied from the high-frequency power supply 43 to the high-frequency antenna 90, and as a result, an induced electric field is generated in the processing space K1 through the metal window 20. As a result, due to the induced electric field, the processing gas in the processing space K1 is turned into plasma, and a high-density inductively coupled plasma is generated. Then, due to the high-frequency power for bias supplied from the high-frequency power supply 41 to the table body 31 of the mounting table 30, the ions in the plasma are drawn into the substrate G, and the substrate G is processed.

[0055] After the processing by the plasma is completed, the power supply from the high-frequency power supplies 41 and 43 and the supply of the processing gas from the processing gas supply unit 71 are stopped, and the substrate G is carried out in the reverse order of the carry-in. Thereby, a series of substrate processing is completed.

[0056] (Case 1) For example, when the above-described substrate processing in the plasma processing apparatus 1 is, for example, etching of a molybdenum film on the substrate G, the table body 31 of the mounting table 30 and the container body 10 of the processing container are each adjusted to a high temperature of 80° C. or higher as follows by a temperature-controlled fluid circulating through the flow path 31b and the flow path 13. Table body 31 of mounting table 30: 80° C. to 110° C. Container body 10 of processing container: 110° C. to 150° C.

[0057] In this case, in the present embodiment, since the temperature-controlled fluid for the flow path 13 of the container body 10 also circulates through the flow path 50a of the shield ring 50, the shield ring 50 is also heated and becomes, for example, a high temperature of 80° C. or higher.

[0058] On the other hand, unlike the present embodiment, when the flow path 50a is not provided in the shield ring 50, the shield ring 50 is heated by heat input from the plasma or the like, but the temperature of the shield ring 50 is low immediately after the start of idling or immediately after maintenance, or immediately after the start of continuous processing of the substrate G. Therefore, the amount of reaction products adhering to the upper surface of the shield ring 50 is large.

[0059] On the other hand, as in the present embodiment, by heating the shield ring 50 with a temperature-controlled fluid circulating through the flow path 50a, the shield ring 50 can be made to a high temperature even immediately after the start of idling. Therefore, the amount of reaction products adhering to the upper surface 50b of the shield ring 50 can be suppressed. Accordingly, it is possible to suppress the reaction products from scattering when the substrate G is replaced or the like, and to prevent contamination of the surface of the substrate and the inside of the processing container. In addition, when reaction products adhere to the inner peripheral side of the upper surface 50b of the shield ring 50, when the distance in the vertical direction between the upper surface 50b of the shield ring 50 and the mounting surface 31a is short, the mounting of the substrate G on the mounting surface 31a or the adsorption of the substrate G to the mounting table 30 may be blocked. In the present embodiment, since the adhesion of reaction products to the upper surface 50b of the shield ring 50 is suppressed, mounting failures and adsorption failures as described above can be suppressed.

[0060] (Case 2) For example, when the above-described substrate processing in the plasma processing apparatus 1 is etching of an oxide film (e.g., silicon oxide film) on the substrate G, the table body 31 of the mounting table 30 is adjusted to a low temperature of 40°C or lower as follows by a temperature-controlled fluid circulating through the flow path 31b, and the container body 10 of the processing container is adjusted to a high temperature of 80°C or higher as follows by a temperature-controlled fluid circulating through the flow path 13. Table body 31 of mounting table 30: 0°C to 40°C Container body 10 of processing container: 80°C to 110°C

[0061] In this case, in the present embodiment, since the temperature-controlled fluid for the flow path 13 of the container body 10 also circulates through the flow path 50a of the shield ring 50, the shield ring 50 is also heated and becomes, for example, a high temperature of 80°C or higher.

[0062] On the other hand, unlike the present embodiment, when the flow path 50a is not provided in the shield ring 50, the shield ring 50 is heated by heat input from the plasma or the like, but is affected by the low-temperature table body 31 of the mounting table 30, and the temperature of the shield ring 50 becomes a temperature approximately in the middle between the temperature of the table body 31 of the mounting table 30 and the temperature of the container body 10 of the processing container. In particular, the temperature on the inner peripheral side of the shield ring 50 becomes lower. Therefore, the amount of reaction products adhering to the upper surface 50b (especially the inner peripheral side thereof) of the shield ring 50 is large.

[0063] In contrast, as in the present embodiment, by heating the shield ring 50 with a temperature-controlled fluid circulating through the flow path 50a, the temperature of the shield ring 50 can be made equal to the temperature of the container body 10 of the processing container. That is, the shield ring 50 can be made to a high temperature. Therefore, the amount of reaction products adhering to the upper surface 50b of the shield ring 50 can be suppressed.

[0064] (Case 3) For example, when the above-described substrate processing in the plasma processing apparatus 1 is etching of an amorphous silicon film on the substrate G or the like, the table body 31 of the mounting table 30 and the container body 10 of the processing container are each adjusted to an intermediate temperature by a temperature-controlled fluid circulating through the flow path 31b and the flow path 13 as follows. Table body 31 of mounting table 30: 40°C to 60°C Container body 10 of processing container: 40°C to 60°C

[0065] In this case, unlike the present embodiment, when the flow path 50a is not provided in the shield ring 50, the shield ring 50 is heated to a high temperature due to heat input from the plasma or the like. Then, in the substrate G placed on the table body 31 of the mounting table 30, in the portion on the shield ring 50 side, that is, the peripheral portion, the photoresist film as an etching mask may be cured due to the influence of the temperature of the shield ring 50. If it is cured in this way, even if a removal process such as ashing is performed later, the photoresist film may not be appropriately removed in some cases. Also, in the peripheral portion of the substrate G, the etching selectivity may vary due to the influence of the temperature of the shield ring 50.

[0066] On the other hand, when the temperature-controlled fluid for the flow path 13 of the container body 10 circulates through the flow path 50a of the shield ring 50 as in the present embodiment, the temperature of the shield ring 50 can be made substantially equal to the temperature of the table body 31 of the mounting table 30 and the temperature of the container body 10 of the processing container. Therefore, curing of the photoresist film in the peripheral portion of the substrate G can be suppressed, and fluctuations in the etching selectivity can be suppressed, and stable processing results can be obtained.

[0067] <Another example 1 of the supply system of the temperature-controlled fluid> FIG. 7 is a schematic diagram showing another configuration example of the supply system of the temperature-controlled fluid in the plasma processing apparatus 1.

[0068] In the example of FIG. 6, the flow path 13 provided in the container body 10 of the processing container, that is, the side wall portion 10a and the bottom wall portion 10b, and the flow path 50a provided in the shield ring 50 were connected so that fluid could flow through them. On the other hand, in the example of FIG. 7, the flow path 23 provided in the shower head 20, that is, the top wall portion of the processing container, and the flow path 50a provided in the shield ring 50 are connected so that fluid can flow through them. For example, the flow path 23 and the flow path 50a are connected in series so that fluid can flow through them, forming a circulation path for one temperature-controlled fluid. That is, temperature-controlled fluid for the flow path 23 of the shower head 20 is circulated and supplied to the flow path 50a of the shield ring 50.

[0069] In the case of the supply system of this example as well, the supply of temperature-controlled fluid from the chiller unit 200 to the flow path 50a of the shield ring 50 is performed via the bottom wall portion 10b of the container body 10, the connection pipe 120, and the introduction hole 101b, as described with reference to FIG. 5 and the like.

[0070] <Case 4> Depending on the type of substrate processing, the container body 10 of the processing container and the shower head 20 are each adjusted to the following temperatures by temperature-controlled fluid circulating through the flow path 13 and the flow path 23, and the shower head 20 is made to be at a higher temperature than the container body 10. Container body 10 of the processing container: 80°C to 110°C Shower head 20: 150°C or higher

[0071] In this case, as in this example, by circulating temperature-controlled fluid for the flow path 23 of the shower head 20 also through the flow path 50a of the shield ring 50, the shield ring 50 can also be made to be at a higher temperature than the container body 10. This example is suitable when the temperature of the shield ring 50 is the same as that of the container body 10 of the processing container and the suppression of the adhesion of reaction products to the shield ring 50 is insufficient.

[0072] <Another example 2 of the supply system of temperature-controlled fluid> FIG. 8 is a schematic diagram showing another configuration example of the supply system of temperature-controlled fluid in the plasma processing apparatus 1.

[0073] In the examples of FIGS. 6 and 7, the wall portion of the processing container such as the container body 10 and the shower head 20 and the flow path 50a provided in the shield ring 50 were connected so that fluid could flow through them. On the other hand, in the example of FIG. 8, the flow path 31b provided in the mounting table 30 and the flow path 50a provided in the shield ring 50 are connected so that fluid can flow through them. For example, the flow path 31b and the flow path 50a are connected in series so that fluid can flow through them, forming a circulation path for one temperature-controlled fluid. That is, the temperature-controlled fluid for the flow path 31b of the mounting table 30 is circulated and supplied to the flow path 50a of the shield ring 50.

[0074] In the case of the supply system of this example as well, the supply of the temperature-controlled fluid from the chiller unit 200 to the flow path 50a of the shield ring 50 is performed via the bottom wall portion 10b of the container body 10, the connection pipe 120, and the introduction hole 101b as described with reference to FIG. 5 and the like.

[0075] (Case 5) For example, when the above-described substrate processing in the plasma processing apparatus 1 is, for example, etching of a silicon oxide film or the like that requires a particularly high selectivity ratio, the table body 31 of the mounting table 30 is adjusted to a lower temperature than in Case 2 as follows by the temperature-controlled fluid circulating through the flow path 31b, and the container body 10 of the processing container is adjusted to a high temperature of 80° C. or higher as follows by the temperature-controlled fluid circulating through the flow path 13. Table body 31 of mounting table 30: -10°C to 0°C Container body 10 of processing container: 80°C to 110°C

[0076] In this case, in this example, since the temperature-controlled fluid for the flow path 31b of the mounting table 30 also circulates through the flow path 50a of the shield ring 50, the shield ring 50 is also cooled and becomes, for example, the same low temperature as the mounting table 30 (specifically, the table body 31).

[0077] On the other hand, when the flow path 50a is not provided in the shield ring 50, unlike the present embodiment, the shield ring 50 is heated by heat input from the plasma or the like and becomes hotter than the base body 31. Then, the peripheral portion of the substrate G on the base body 31 is affected by the hot shield ring 50 and becomes hotter than the central portion, making it impossible to etch with an appropriate selectivity. That is, the etching result becomes non-uniform within the plane of the substrate G.

[0078] In contrast, as in this example, by adjusting and cooling the shield ring 50 to a low temperature with the temperature control fluid circulating through the flow path 50a to make it the same temperature as the base body 31, the peripheral portion of the substrate G on the base body 31 has no temperature difference from the central portion. Therefore, the entire surface of the substrate G can be etched with an appropriate selectivity. That is, according to this example, a uniform etching result within the plane of the substrate G can be obtained.

[0079] <Main effects of this embodiment> As described above, in this embodiment, a flow path provided inside a component of the plasma processing apparatus 1 other than the shield ring 50 (specifically, any one of the flow paths 13, 23, or 31b) and the flow path 50a provided inside the shield ring 50 are connected so that the fluid can flow through them. Therefore, it is possible to suppress problems caused by the temperature of the shield ring 50 (specifically, the adhesion of reaction products to the shield ring 50 and the non-uniformity of the etching result within the plane of the substrate G). In addition, since the adhesion of reaction products to the shield ring 50 can be suppressed, the execution cycle of the maintenance for removing the reaction products from the shield ring 50 can be extended. As a result, the decrease in production efficiency associated with the maintenance can be suppressed.

[0080] In addition, in the present embodiment, the temperature control fluid supplied to the flow path 50a of the shield ring 50 is the temperature control fluid supplied to the flow paths of the components of the plasma processing apparatus 1 other than the shield ring 50. Therefore, since the piping of the temperature control fluid for the flow path 50a of the shield ring 50 can be shared with the piping of the temperature control fluid for other flow paths, the supply system of the temperature control fluid is simplified, and an increase in cost can be prevented.

[0081] <Another example of the shield ring 50> FIG. 9 is a diagram for explaining another example of the shield ring, and shows a split member 301 that constitutes the shield ring in this example. The split member 301 is provided along each side of the rectangular mounting surface 31a of the mounting table 30 in a plan view, and constitutes a rectangular frame-shaped shield ring 300. Note that the split member 301 that constitutes the long side of the shield ring 300 is formed longer than the split member 301 that constitutes the short side. In the shield ring 50 of the example of FIG. 4 and the like, an introduction hole 101b and a discharge hole 103b for the temperature control fluid are provided for one shield ring 50. On the other hand, in the example of FIG. 9, an introduction hole 302 and a discharge hole 303 for the temperature control fluid are provided one by one for each of the four split members 301 that constitute the shield ring 300. By adopting such a configuration, the amount of temperature change of the temperature control fluid while passing through the flow path 304 of the shield ring 300 can be suppressed, and the shield ring 300 can be adjusted to a desired temperature. When the substrate G to be processed is large and the shield ring 300 is large, the above-described amount of temperature change is likely to be large. Therefore, it may be formed particularly as shown in FIG. 9.

[0082] In the split member 301 of FIG. 9, the flow path 304 for the temperature control fluid is formed in an annular shape in a top view. The split member 301 has a convex portion 301a that protrudes to the side opposite to the mounting table 30 (the right side in the figure), and an introduction hole 302 and a discharge hole 303 are provided on the lower surface of the convex portion 301a. The introduction hole 302 and the discharge hole 303 are each connected to a portion of the flow path 304 on the side opposite to the mounting table 30 (the right side in the figure).

[0083] Note that although the convex portion 301a depends on the formation position of the exhaust port 14, for example, it is provided at the central portion of the dividing member 301 in the direction in which the dividing member 301 extends (the vertical direction in the figure).

[0084] <Other Embodiments> FIG. 10 is a partially enlarged top view of the inside of the processing container according to another embodiment. FIG. 11 is a partially enlarged cross-sectional view of the periphery of the shield ring 50 according to another embodiment. As shown in FIGS. 10 and 11, in the plasma processing apparatus according to the present disclosure, a planar annular flow rectifying wall 400 that surrounds the mounting surface 31a of the table body 31 of the mounting table 30 is configured separately from the shield ring 50 and is detachably provided on the shield ring 50. When the flow rectifying wall 400 is not provided, reaction products that are factors for suppressing etching are more likely to be discharged from the peripheral portion of the substrate G than from the central portion, so that the etching rate may be higher at the peripheral portion of the substrate G than at the central portion. As in the present embodiment, by providing the flow rectifying wall 400 and blocking the flow of the etching gas near the peripheral portion of the substrate G with the flow rectifying wall 400, a gas accumulation can be formed around the substrate G, and the flow rate of the etching gas near the peripheral portion can be reduced, thereby suppressing the non-uniformity of the etching rate within the substrate surface.

[0085] The flow rectifying wall 400 is formed using, for example, an insulating material such as alumina. Further, the flow rectifying wall 400 may be formed using a metal material such as stainless steel and coated with an insulator on the outside. The flow rectifying wall 400 is divided into, for example, four dividing members 401 to 404, similar to the shield ring 50. The dividing member 401 is provided on the dividing member 101 so as to extend along the dividing member 101. The dividing member 402 is provided on the dividing member 102 so as to extend along the dividing member 102. The dividing member 403 is provided on the dividing member 103 so as to extend along the dividing member 103. The dividing member 404 is provided on the dividing member 104 so as to extend along the dividing member 104.

[0086] Further, each of the dividing members 401 to 404 of the rectifying wall 400 has a wall portion 400a extending in the vertical direction at its inner peripheral side end, and a flange portion 400b extending outward from the lower end of the wall portion 400a.

[0087] When the rectifying wall 400 and the shield ring 50 are configured separately as in this example, the shield ring 50 and the rectifying wall 400 are fixed so that heat conduction between the two is good. This fixing is performed, for example, by fastening the flange portion 400b and the shield ring 50 using screws (not shown) arranged at intervals of 50 mm to 150 mm along the flange portion 400b. By fixing using screws in this way, heat can be transferred between the shield ring 50 and the rectifying wall 400 via the screws. Therefore, the temperature of the rectifying wall 400 becomes substantially equal to that of the shield ring 50. That is, by controlling the temperature of the shield ring 50, the temperature of the rectifying wall 400 can be controlled. Thus, it is possible to suppress the occurrence of problems (specifically, adhesion of reaction products to the rectifying wall 400, etc.) caused by the temperature of the rectifying wall 400.

[0088] Further, as shown in FIG. 11, it is preferable that a gap H of about 1 mm to 10 mm exists between the rectifying wall 400 and the shield ring 50. This is because reaction products are discharged through the gap H, so it is possible to suppress the deposition of reaction products on the rectifying wall 400 and the cause of particles.

[0089] For example, by fixing using screws as described above with a spacer such as a washer sandwiched between the rectifying wall 400 and the shield ring 50, the rectifying wall 400 and the shield ring 50 can be fixed with a gap provided between them.

[0090] Note that the screws for fixing the rectifying wall 400 and the shield ring 50 are also used so as not to be exposed to the plasma processing space K1, similar to the screws N described above.

[0091] <Another example of the shield ring and the rectifying wall> FIG. 12 is a diagram showing another example of the shield ring and the rectifying wall. In the examples of FIGS. 10 and 11, the shield ring and the rectifying wall were separate bodies, but they may be integrated. By integrating them, heat can be effectively transferred from the shield ring portion to the rectifying wall portion. However, by making them separate bodies, only the rectifying wall to which more reaction products adhere can be maintained, so maintenance becomes easier. When discarding the rectifying wall to which reaction products have adhered and replacing it with a new rectifying wall, cost reduction can be achieved by making them separate bodies.

[0092] The shield ring 600 in the example of FIG. 12 has a shield ring portion 601 corresponding to the shield ring 50 in FIG. 10 etc. and a rectifying wall portion 602 corresponding to the rectifying wall 400 in FIG. 10 etc. In the case of this example, a through hole corresponding to the gap H in the example of FIG. 11 may be provided in the rectifying wall portion 602.

[0093] <Modification Example> In the above examples, plasma treatment was used as the substrate treatment, but the technology according to the present disclosure can also be applied to treatments without using plasma. Also, in the above examples, etching treatment was performed as the substrate treatment, but the technology according to the present disclosure can also be applied to substrate treatments other than etching (for example, film forming treatment).

[0094] The embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and gist of the appended claims.

Explanation of Reference Numerals

[0095] 1 Plasma processing apparatus 10a Side wall portion 10b Bottom wall portion 13 Flow path 20 Metal window 23 Flow path 30 Mounting table 31a Mounting surface 31b Flow path 50, 300, 600 Shield Rings 50a, 304 Flow Paths G Glass Substrate

Claims

1. A substrate processing apparatus for processing a substrate, comprising: a processing chamber in which the substrate is processed; a chamber wall portion constituting the processing chamber; a mounting table installed inside the processing chamber and having a mounting surface on which the substrate is mounted; a ring member disposed surrounding the outer periphery of the mounting surface; a first flow path provided inside a component of the substrate processing apparatus other than the ring member, through which a temperature control medium flows; a second flow path provided inside the ring member and fluidly connected to the first flow path, the substrate processing apparatus comprising the second flow path.

2. A chamber-side flow path provided inside the chamber wall portion and through which a first temperature control medium flows; a stage-side flow path provided inside the mounting table and through which a second temperature control medium flows, the substrate processing apparatus according to claim 1 comprising the stage-side flow path.

3. The first flow path is the chamber-side flow path; the chamber wall portion provided with the chamber-side flow path is at least one of a side wall portion or a bottom wall portion, the substrate processing apparatus according to claim 2.

4. The first flow path is the chamber-side flow path; the chamber wall portion provided with the chamber-side flow path is a top plate portion, the substrate processing apparatus according to claim 2.

5. The first flow path is the stage-side flow path, the substrate processing apparatus according to claim 2.

6. The first temperature control medium and the second temperature control medium are each independently temperature-controlled, the substrate processing apparatus according to any one of claims 2 to 5.

7. The first temperature control medium is temperature-controlled to a higher temperature than the second temperature control medium, the substrate processing apparatus according to claim 6.

8. An annular straightening wall surrounding the mounting surface is disposed on the upper surface of the ring member, the substrate processing apparatus according to any one of claims 1 to 7.

9. The ring member is integrally formed with an annular straightening wall surrounding the mounting surface, the substrate processing apparatus according to any one of claims 1 to 7.

10. At least the inner peripheral portion of the ring member has an upper surface positioned below the mounting surface, the substrate processing apparatus according to any one of claims 1 to 9.

11. A method for processing a substrate by a substrate processing apparatus, comprising: the substrate processing apparatus comprising: a processing chamber in which the substrate is processed; a chamber wall portion constituting the processing chamber; a mounting table installed inside the processing chamber and having a mounting surface on which the substrate is mounted; A ring member disposed to surround the outer periphery of the placement surface; A first flow path provided inside a component member of the substrate processing apparatus other than the ring member, through which a temperature control medium flows; A second flow path provided inside the ring member and fluidly connected to the first flow path; and A substrate processing method of flowing the temperature control medium through the second flow path to process the substrate.

12. The substrate processing apparatus includes: A chamber-side flow path provided inside the chamber wall portion through which a first temperature control medium flows; and A stage-side flow path provided inside the stage through which a second temperature control medium flows. The substrate processing method according to claim 11.

13. The first flow path is the chamber-side flow path; The chamber wall portion provided with the chamber-side flow path is at least one of a side wall portion or a bottom wall portion. The substrate processing method according to claim 12.

14. The first flow path is the chamber-side flow path; The chamber wall portion provided with the chamber-side flow path is a top plate portion. The substrate processing method according to claim 12.

15. Flowing the first temperature control medium through the second flow path to heat the ring member. The substrate processing method according to claim 13 or 14.

16. Flowing the first temperature control medium through the second flow path to cool the ring member. The substrate processing method according to claim 13 or 14.

17. The first flow path is the stage-side flow path. The substrate processing method according to claim 12.

18. Flowing the second temperature control medium through the first flow path to cool the ring member. The substrate processing method according to claim 16.

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