Measuring device, measuring method, substrate processing device, and method for manufacturing an article

Abstract

A measurement device capable of reducing errors in the wavelength of light irradiated onto a pattern. [Solution] The measurement device measures the position of a pattern by detecting second light from the pattern illuminated by first light, and includes a wavelength variable section having an opening and a member that changes the wavelength transmitted by the first light depending on the incident position of the first light, and a moving section that moves the wavelength variable section using the distance between the incident position of the first light on the member and the position of the opening so that the wavelength of the first light transmitted through the member changes to a desired wavelength.

Description

Technical Field

[0001] The present invention relates to a measuring device, a measuring method, a substrate processing device, and a method for manufacturing an article.

Background Art

[0002] In the manufacture of articles such as semiconductor devices, MEMS, color filters, or flat panel displays, the miniaturization of patterns formed on a substrate has progressed, and the demand for improving the dimensional accuracy of the patterns has increased.

[0003] Therefore, in a substrate processing device that performs processing on a substrate, high accuracy is required for measuring the position of the substrate on which a pattern is formed. As an example of a substrate processing device, there is an exposure device that exposes a substrate to form a pattern on the substrate. In the exposure device, exposure light is imaged at a predetermined position on the substrate through a projection optical system, and a pattern is formed on the substrate by moving a stage on which the substrate is placed. Also, the accuracy of measuring the pattern on the substrate to align the relative position between a predetermined position on the substrate where the pattern is formed and the exposure light, and the accuracy of measuring the relative position between patterns formed on different layers (layers) on the substrate are important.

[0004] As a method for measuring the position of a pattern (hereinafter simply referred to as a pattern) formed on a substrate, there is a method of illuminating the pattern and detecting the light reflected by the pattern. Also, as a method for measuring the pattern with higher accuracy, there is a method of selecting the wavelength of the light for illuminating the pattern according to the physical and optical characteristics of the pattern and the peripheral portion of the pattern. The physical properties of the material constituting the pattern and the shape of the pattern change according to the process in which the substrate is processed. Therefore, by illuminating the pattern with light having a wavelength selected according to the process in which the substrate is processed, the intensity of the detection signal of the light reflected from the pattern is improved, the error of the detection signal is reduced, and the accuracy of the pattern position measurement is improved.

[0005] Patent Document 1 describes an imaging system that images a sample while changing the wavelength of light irradiated on the sample and synchronizing with the change in wavelength. Further, it is described that the light source device configured in the imaging system changes the wavelength of the light that passes through the filter and irradiates the sample by driving the filter.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] In Patent Document 1, when the position of the driven filter deviates from the target position, an error occurs in the wavelength of the light that passes through the filter and irradiates the sample. As a result, there is a problem that light of a desired wavelength for imaging the sample is not irradiated on the sample.

[0008] Therefore, an object of the present invention is to provide a measuring device, a measuring method, a substrate processing device, and a method for manufacturing an article that can improve the intensity of the detection signal of light and reduce the error of the detection signal.

Means for Solving the Problems

[0009] A measuring device according to one aspect of the present invention for solving the above problems is a measuring device that measures the position of a pattern by detecting second light from a pattern illuminated by first light, and a member that changes the wavelength of the first light transmitted according to the incident position where the first light is incident, and a wavelength variable unit having an opening, and a moving unit that moves the wavelength variable unit so that the wavelength of the first light transmitted through the member changes to a desired wavelength using the distance between the incident position of the first light in the member and the position of the opening.

Effects of the Invention

[0010] According to the present invention, it is possible to provide a measuring device, a measuring method, a substrate processing device, and a method for manufacturing an article, in which the intensity of a detection signal of light is improved and an error of the detection signal can be reduced.

Brief Description of the Drawings

[0011]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Embodiments for Carrying Out the Invention

[0012] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In each figure, the same members are denoted by the same reference numerals, and redundant descriptions are omitted. Note that the present invention is not limited to the following embodiments, and merely shows specific examples advantageous for the implementation of the present invention. Also, not all combinations of features described in the following embodiments are essential for solving the problems of the present invention.

[0013] <First Embodiment> A measuring device according to the first embodiment will be described. FIG. 1 is a diagram for explaining the measuring device according to the first embodiment. Hereinafter, the direction parallel to the optical axis of the objective optical system 71 described later is defined as the Z-axis direction, and two directions perpendicular to each other along the plane perpendicular to the Z-axis direction are defined as the X-axis direction and the Y-axis direction. Also, the rotation directions around the X-axis, Y-axis, and Z-axis are defined as the θX direction, θY direction, and θZ direction, respectively.

[0014] FIG. 1(a) is a diagram showing the configuration of the measuring device 100. The measuring device 100 is, for example, a measuring device that measures the positions in the X-axis direction and Y-axis direction of a pattern provided on the substrate 73. Also, the measuring device 100 may be, for example, a measuring device that measures the positions in the X-axis direction and Y-axis direction of patterns provided on different layers on the substrate 73 and measures the distances between the respective patterns. The measuring device 100 includes a substrate stage WS that holds the substrate 73, a measuring unit 150, and a control unit 1100.

[0015] Here, the substrate 73 is an object whose alignment error and overlay error are measured by the measuring device 100. The substrate 73 is, for example, a substrate used for manufacturing devices such as semiconductor elements and liquid crystal display elements, and specifically includes wafers, liquid crystal substrates, and other substrates to be processed.

[0016] The substrate stage WS holds the substrate 73 via a substrate chuck (not shown) and is configured to be drivable by a stage drive unit (not shown). The stage drive unit includes a linear motor or the like and can move the substrate 73 held by the substrate stage WS by driving the substrate stage WS in the X-axis direction, Y-axis direction, Z-axis direction, θX direction, θY direction, and θZ direction. Further, a mirror 82 is provided on the substrate stage WS. Also, a laser interferometer 81 is provided at a position facing the mirror 82. The laser interferometer 91 measures the position of the substrate stage WS in the X-axis direction by measuring the distance to the mirror 82 in the X-axis direction. Similarly, laser interferometers (not shown) for measuring the position of the substrate stage WS in the X-axis direction and Z-axis direction are provided respectively. The position of the substrate stage WS is measured in real time by these laser interferometers, and the measured results are output to the control unit 1100. As a result, the substrate stage WS is driven to a predetermined position under the control of the control unit 1100. Further, the measuring device 100 may include a scale disposed on the substrate stage WS and an encoder that measures the position of the substrate stage WS by detecting the position of the scale.

[0017] The control unit 1100 comprehensively controls each part of the measuring device 100 to operate the measuring device 100. Further, the control unit 1100 also executes measurement processing in the measuring device 100 and arithmetic processing of measurement values obtained by the measuring device 100. The control unit 1100 is composed of a computer (information processing device). The control unit 1100 has, for example, a processing unit having a processor such as a CPU that performs operations for control according to a program, a ROM that holds a control program and fixed data, and a storage unit such as a RAM that holds a work area of the processing unit and temporary data. Further, the control unit 1100 may have a magnetic storage device (HDD) that can store data in a larger capacity than the ROM and RAM as a storage unit. Further, the control unit 1100 may have a drive device that loads an external medium such as a CD, DVD, or memory card to read and write data as a storage unit. In the present embodiment, at least one of the ROM, RAM, magnetic storage device, and drive device is used as a storage unit, and the storage unit holds a control program, fixed data, a work area of the processing unit, and temporary data.

[0018] The measurement unit 150 illuminates a pattern provided on the substrate 73, detects light from the pattern, and images the pattern provided on the substrate 73. FIG. 1(b) is a diagram showing the configuration of the measurement unit 150. The measurement unit 150 includes an illumination system that illuminates the substrate 73 using light from the light source 61, and an imaging system (detection system) that forms an image of the light from the pattern 72 on the detection unit 75 (forms an image of the pattern 72). The detection unit 75 has a light receiving unit (not shown) that receives light from the pattern 72, and acquires a detection signal of the light received by the light receiving unit. Further, the detection unit 75 can function as an imaging unit that forms an imaging area for imaging the pattern 72 by the light receiving unit. Here, the pattern 72 is a pattern for measuring the alignment error and overlay error in the substrate 73, and the position of the pattern 72 is measured based on the detection signal acquired by the detection unit 75.

[0019] The light (first light) emitted from the light source 61 is guided to the wavelength variable section 140 via the illumination optical system (first optical system) 62. As the light source 61, for example, a laser light source, an LED, a halogen lamp, or the like can be used. The wavelength variable section 140 is driven (moved) by the drive section 41 (moving section). The drive section 41 has drive means such as a linear motor, and by driving (moving) the wavelength variable section 140 in the X-axis direction (a predetermined direction perpendicular to the optical axis), the wavelength variable member 142 held by the wavelength variable section 140 can be moved. Further, the position of the wavelength variable section 140 is measured by, for example, an encoder or an interferometer, and the wavelength variable section 140 is controlled by the control section 1100 to be driven to a predetermined position.

[0020] Here, the configuration of the wavelength variable section 140 will be described. FIG. 1(c) is a diagram showing the wavelength variable section 140 according to the present embodiment. The wavelength variable section 140 includes a wavelength variable member (first member) 142, an aperture forming member (second member) 144, and a holding member 145. The wavelength variable member 142 includes a wavelength variable element that changes the relationship (hereinafter referred to as spectrum) between the wavelength and intensity of the transmitted light according to the incident position and angle of the light. Here, the spectrum may include, for example, information indicating the relationship between the intensity of the light and the wavelength of the light. Further, the spectrum may include, for example, information on the wavelength of the light at which the intensity of the light is maximum, minimum, or a predetermined value. Further, the spectrum may include, for example, information on the wavelength band of the light at which the intensity of the light is within a predetermined range. Further, the spectrum may include, for example, information on the waveform of the spectrum.

[0021] Based on the relationship between the position in a predetermined direction perpendicular to the optical axis of the wavelength variable unit 140 acquired in advance and the wavelength of the light transmitted through the wavelength variable unit 140, the wavelength variable unit 140 is aligned by the drive unit 41, whereby the substrate 73 can be illuminated with light of a desired wavelength. Here, the predetermined direction perpendicular to the optical axis is the direction perpendicular to the optical axes of the illumination optical systems 62 and 63, relay lens 67, or objective optical system 71 described later, and is, for example, the X-axis direction or the Y-axis direction. Further, the drive unit 41 not only drives the wavelength variable unit 140 in a predetermined direction (for example, the X-axis direction) perpendicular to the optical axis, but also drives it in a rotational direction (for example, the θX direction) around a predetermined axis perpendicular to the optical axis to move the position of the wavelength variable unit 140 in a predetermined rotational direction. Here, the relationship between the position and the wavelength will be described in detail later.

[0022] In this way, by changing the position and angle of the wavelength variable member 142 by the drive unit 41, the wavelength of the light transmitted through the wavelength variable member 142 can be changed. As the wavelength variable member 142, for example, a transmissive wavelength variable filter can be used. Here, the transmissive wavelength variable filter is, for example, a bandpass filter having a multilayer film formed on the surface where light is incident, and the film thickness of the multilayer film is formed thicker along the wavelength change direction. Thereby, the wavelength of the transmitted light continuously changes due to the interference of light. Further, as the wavelength variable member 142, for example, a transmissive diffraction grating that separates light of different wavelengths by a diffraction grating formed on a member that transmits light can also be used.

[0023] FIG. 1(d) is a diagram showing the relationship between the wavelength and intensity of the light transmitted through the wavelength variable member 142. When the wavelength variable member 142 is arranged at a plurality of discrete positions in the X-axis direction, the relationship between the wavelength and intensity of the light transmitted through the wavelength variable member 142 is shown. Depending on the position of the wavelength variable member 142, the position where the light is incident changes, and the wavelength of the light transmitted through the wavelength variable member 142 changes. Here, since the absolute position of the light incident on the wavelength variable section 140 in the measurement section 150 does not change, by driving the wavelength variable section 140 by the drive section 41, the relative position of the light incident on the wavelength variable section 140 changes. For this reason, in the measurement section 150 shown in FIG. 1(a), the wavelength variable section 140 is driven in the X-axis direction by the drive section 41, and as the position of the wavelength variable member 142 changes with respect to the incident light, the wavelength of the light illuminating the substrate 73 can be adjusted.

[0024] Here, returning to the description of FIG. 1(c). The aperture forming member 144 has an aperture 143 that transmits the incident light and does not change the wavelength of the transmitted light. It is arranged at different positions in the X-axis direction with respect to the wavelength variable member 142. The aperture 143 is arranged in the same plane (XY plane) perpendicular to the optical axis as the wavelength variable member 142. Also, the length of the aperture 143 in the longitudinal direction (X-axis direction) is configured to be smaller than the light beam diameter of the light incident on the aperture 143. In the example of FIG. 1(c), the shape of the aperture 143 is a rectangle with the side in the X-axis direction shorter than the side in the Y-axis direction, but it is not limited to this shape. The shape of the aperture 143 may be circular, square, or a rectangle with the side in the X-axis direction longer than the side in the Y-axis direction. Also, by increasing the length of the aperture 143 in the longitudinal direction (X-axis direction), the intensity of the light can be increased. On the other hand, by shortening the length of the aperture 143 in the longitudinal direction, the range of the light transmitted through the aperture 143 in the X-axis direction becomes narrower, and the accuracy of detecting the position of the peak of the light intensity is improved. Therefore, it is advisable to determine the length of the aperture 143 in the longitudinal direction in consideration of the light intensity and detection accuracy. Also, the aperture forming member 144 may have an optical element that does not change the wavelength of the transmitted light.

[0025] The aperture forming member 144 shields the light incident on the peripheral region of the aperture 143. Further, the peripheral region of the aperture 143 includes the region between the aperture 143 and the wavelength variable member 142. The holding member 145 holds the wavelength variable member 142 and the aperture forming member 144. By driving the wavelength variable section 140 in the X-axis direction by the drive section 41, the position in the X-axis direction where the light is incident can be adjusted to a desired position. Thereby, the light emitted from the light source 61 passes through the aperture 143 or the wavelength variable member 142 and illuminates the substrate 73.

[0026] Here, returning to the description of FIG. 1(b), the light that has passed through the wavelength variable section 140 enters the illumination aperture stop 64 via the illumination optical system (first optical system) 63. The light beam diameter of the light at the illumination aperture stop 64 is smaller than the light beam diameter of the light at the light source 61. The light that passes through the illumination aperture stop 64 enters the beam splitter 68 via the relay lens 67. The beam splitter 68 is, for example, a polarization beam splitter that transmits P-polarized light parallel to the Y-axis direction and reflects S-polarized light parallel to the X-axis direction. The light that passes through the beam splitter 68 passes through the aperture stop 69, passes through the λ / 4 plate 70 and is converted into circularly polarized light, and illuminates the pattern 72 provided on the substrate 73 via the objective optical system 71.

[0027] Here, the illumination optical system 63 may have a light quantity adjustment section (not shown) that can switch a plurality of ND filters having different transmittances with respect to the light from the light source 61. The control section 1100 can adjust the intensity of the light illuminating the substrate 73 with high precision by controlling the light quantity adjustment section.

[0028] The light (second light) from pattern 72 passes through the λ / 4 plate 70 via the objective optical system 71, is converted from circular polarization to S polarization, and enters the aperture stop 69. Here, the light from pattern 72 includes the light reflected, diffracted, or scattered by pattern 72. Also, the polarization state of the light from pattern 72 is circular polarization in the opposite direction to the circularly polarized light illuminating pattern 72. Thus, if the polarization state of the light illuminating pattern 72 is right-handed circular polarization, the polarization state of the light from pattern 72 is left-handed circular polarization. The light passing through the aperture stop 69 is reflected by the beam splitter 68 and enters the detection unit 75 via the imaging optical system (second optical system) 74.

[0029] In this way, in the measurement unit 150, the beam splitter 68 separates the optical path of the light illuminating the substrate 73 from the optical path of the light from the substrate 73, and an image of pattern 72 is formed on the detection unit 75. Then, the control unit 1100 acquires the positions of the pattern elements constituting pattern 72 and the position of pattern 72 based on the position information of the substrate stage WS obtained by the laser interferometer 81 and the waveform of the detection signal obtained by detecting the image of pattern 72.

[0030] Here, in the measurement unit 150, a detection aperture stop may be configured by arranging a plurality of lenses between the beam splitter 68 and the detection unit 75. Also, a plurality of aperture stops each having a different numerical aperture settable for each of the illumination system and the detection system may be provided for each of the illumination aperture stop 64 and the detection aperture stop, and these plurality of aperture stops may be made switchable. Thereby, the σ value, which is a coefficient representing the ratio of the numerical aperture of the illumination system to the numerical aperture of the detection system, can be adjusted.

[0031] Here, referring to FIG. 11, the measurement unit according to the prior art will be described. FIG. 11(a) is a diagram showing the configuration of the measurement unit 50 according to the prior art. Since the other configurations of the wavelength variable unit 40 are the same as those of the measurement unit 150 shown in FIG. 1, the description thereof will be omitted here. FIG. 11(b) is a diagram showing a configuration example of the wavelength variable unit 40 according to the prior art. The wavelength variable member 42 has a wavelength variable member 42 and a holding member 45. The wavelength variable member 42 is the same optical element as the wavelength variable member 142 in FIG. 1. Further, the holding member 45 holds the wavelength variable member 42. Also, the wavelength variable unit 40 is driven in the X-axis direction by the drive unit 41, and based on the relationship between the position and wavelength of the wavelength variable unit 40 acquired in advance, when the wavelength variable unit 40 is moved, the substrate 73 can be illuminated with light of a desired wavelength.

[0032] Thus, based on the relationship between the position and wavelength of the wavelength variable unit 40 acquired in advance, the wavelength variable unit 40 is driven. However, when the incident position (hereinafter referred to as the incident position) where light is incident on the wavelength variable member 42, the beam diameter of the incident light, the angular characteristics, etc. change, the wavelength of the light transmitted through the wavelength variable member 42 changes. As a result, there is a possibility that the wavelength of the light transmitted through the wavelength variable member 42 and illuminating the substrate 73 deviates from the target wavelength (hereinafter referred to as wavelength deviation).

[0033] Here, referring to FIGS. 11(c) to (e), the factors causing wavelength deviation will be described.

[0034] FIG. 11(c) is a diagram showing the change in the wavelength of the light transmitted through the wavelength variable member 42 when the incident position changes in the X-axis direction. As factors for the incident position to change in the X-axis direction, the light emitting point or mounting position of the light source 61 changes in the X-axis direction, a control error occurs in the position control of the wavelength variable member 940 due to the drive of the drive unit 41, and the like can be cited. As shown in FIG. 11(c), when the incident position changes in the X-axis direction, the central wavelength of the light transmitted through the wavelength variable member 42 changes from λ0 to λ1, and a deviation Δλ1 occurs in the central wavelength.

[0035] Further, Fig. 11(d) is a diagram showing the change in the wavelength of the light transmitted through the wavelength variable member 42 when the beam diameter of the light incident on the wavelength variable member 42 changes. As factors for the change in the beam diameter of the light incident on the wavelength variable member 42, there are the change in the light emitting point and mounting position of the light source 61 in the Z-axis direction, the change in the mounting position of the illumination optical systems 62, 63, or the wavelength variable section 40 in the Z-axis direction, and the like. As shown in Fig. 11(d), when the beam diameter of the light incident on the wavelength variable member 42 changes, the wavelength band of the light transmitted through the wavelength variable member 42 changes from w0 to w2. Further, the signal intensity changes according to the change in the wavelength band, and when the wavelength band widens, the signal intensity near the center wavelength decreases.

[0036] Further, Fig. 11(e) is a diagram showing the change in the wavelength of the light transmitted through the wavelength variable member 42 when the angular characteristics of the light incident on the wavelength variable member 42 change. Also, as factors for the change in the angular characteristics of the light incident on the wavelength variable member 42, there are the change in the angle of the light emitted from the light emitting point of the light source 61, the change in the light intensity distribution with respect to the angle of the light, the change in the transmission characteristics of the lens 62 or the wavelength variable member 42, and the like. As shown in Fig. 11(e), when the angular characteristics of the light incident on the wavelength variable member 42 change, the center wavelength of the light transmitted through the wavelength variable member 42 changes from λ0 to λ3, a shift Δλ3 occurs in the center wavelength, and the wavelength band of the light transmitted through the wavelength variable member 42 changes from w0 to w3. Further, the signal intensity changes according to the change in the wavelength band, and when the wavelength band widens, the signal intensity near the center wavelength decreases. Also, when the incident position changes in the X-axis direction and the angular characteristics of the light incident on the wavelength variable member 42 change, a wavelength change as shown in Fig. 11(e) also occurs.

[0037] Thus, in the measurement unit 50 according to the prior art, there may be a problem that the wavelength of the light illuminating the substrate 73 is shifted due to the wavelength shift of the light transmitted through the wavelength variable member 42. For this reason, a decrease in the intensity of the detection signal of the light acquired by the detection unit 75 and an increase in error may occur, and the accuracy of pattern position measurement may decrease.

[0038] Therefore, the measuring device 100 of the present embodiment determines the position of the wavelength variable unit 140 driven by the driving unit 41 using the relative distance between the light incident position on the wavelength variable member 142 and the opening 143 (hereinafter referred to as the relative distance) obtained from the wavelength characteristic information of the light transmitted through the wavelength variable member 142 and the opening 143. FIG. 2 is a diagram for explaining the measuring method according to the present embodiment.

[0039] Before measuring the position of the pattern, the control unit 1100 acquires information (hereinafter referred to as wavelength characteristic information) representing the relationship between the position of the wavelength variable unit 140 in the X-axis direction and the wavelength of the light transmitted through the wavelength variable member 142 and the opening 143. Here, the wavelength characteristic information can be acquired from the storage unit of the control unit 1100 or an external device. Further, the wavelength characteristic information is acquired by actually measuring the wavelength of the light while changing the position of the wavelength variable unit 140 in the X-axis direction. Further, the wavelength characteristic information may be acquired by simulation from the design values of the positions, dimensions, and characteristics related to the wavelength of the wavelength variable member 142 of the wavelength variable member 142 and the opening 143.

[0040] Here, the wavelength characteristic information of the wavelength variable unit 140 will be described. FIG. 2(a) is a diagram showing an example of the wavelength characteristic information of the wavelength variable unit 140. In the graph shown in FIG. 2(a), the horizontal axis is the position of the wavelength variable unit 140 in the X-axis direction, and the vertical axis is the wavelength (for example, the center wavelength) of the light detected by the detection unit 75. Further, the waveform W43 represents the change in the wavelength (second wavelength) of the light transmitted through the opening 143, and the waveform W42 represents the change in the wavelength (first wavelength) of the light transmitted through the wavelength variable member 142. Further, in the graph shown in FIG. 2(a), the range from X2S to X2L is the position of the wavelength variable unit 140 in the X-axis direction where light is incident on the wavelength variable member 142.

[0041] As shown in FIG. 2(a), since the opening 143 does not affect the wavelength of the transmitted light, the waveform W43 representing the change in the wavelength of the light transmitted through the opening 143 remains constant regardless of the position in the X-axis direction of the wavelength variable section 40. Also, in the waveform W43, the center position X3 of the opening 143 is obtained by determining the positions at both ends in the X-axis direction. On the other hand, due to the characteristics of the wavelength variable member 142 regarding the wavelength, the waveform W42 representing the change in the wavelength of the light transmitted through the wavelength variable member 142 changes according to the position in the X-axis direction of the wavelength variable section 140. Here, in the example of FIG. 2(a), the wavelength variable member 142 is arranged such that as the position in the X-axis direction of the wavelength variable section 140 increases, the wavelength of the light transmitted through the wavelength variable member 142 increases. However, it is not limited to the example of FIG. 2(a), and the wavelength variable member 142 may be arranged such that as the position in the X-axis direction of the wavelength variable section 140 increases, the wavelength of the light transmitted through the wavelength variable member 142 decreases.

[0042] Based on the acquired wavelength characteristic information, the control unit 1100 acquires the relative distance between the light incident position on the wavelength variable member 142 and the opening 143. When the position in the X-axis direction of the wavelength variable section 240 at which the wavelength of the light transmitted through the wavelength variable member 142 is λ is X2, the relative distance dX is represented by the following formula (1). dX = X3 - X2 ···(1)

[0043] Also, the position X2 in the X-axis direction of the wavelength variable section 140 at which the wavelength of the light transmitted through the wavelength variable member 142 is λ is obtained based on the acquired wavelength characteristic information.

[0044] Here, it is preferable that the interval in the X-axis direction between the wavelength variable member 142 and the opening 143 is configured to be sufficiently larger than the light beam diameter of the light incident on the wavelength variable member 142. This is to prevent the waveforms W42 and W43 showing the change in the center wavelength of the light transmitted through the wavelength variable member 142 and the opening 143 respectively from overlapping.

[0045] Next, a measurement method for measuring the position of the pattern according to the present embodiment will be described. FIG. 2(b) is a flowchart showing the measurement method for measuring the position of the pattern. In FIG. 2(b), as an example, a flowchart of a measurement method for measuring the superposition error, that is, the relative positions of a plurality of patterns constituting the pattern 72, is shown.

[0046] In S121, the control unit 1100 determines the position of the substrate stage WS. First, the control unit 1100 moves the substrate stage WS along the directions (X and Y axis directions) perpendicular to the optical axis direction so that the image of the pattern 72 is formed in the detection region of the detection unit 75, and determines the positions of the substrate stage WS in the X and Y axis directions. While moving the substrate stage WS along the optical axis direction (Z axis direction), the control unit 1100 acquires the intensity of the detection signal detected and acquired by the detection unit 75 from the pattern 72. The control unit 1100 moves the substrate stage WS along the Z axis direction to a position where the change in the intensity of the detection signal corresponding to the acquired intensity of the detection signal and the position in the optical axis direction is equal to or greater than the threshold value, and determines the position of the substrate stage WS in the Z axis direction.

[0047] In S122, the control unit 1100 moves the wavelength variable unit 140 by a predetermined amount in the X axis direction by the driving unit 41. The control unit 1100 causes the detection unit 75 to detect the intensity of the light transmitted through the wavelength variable member 142 and the aperture 143. The control unit 1100 controls the driving unit 41 and the detection unit 75 so as to repeatedly move the wavelength variable member 42 and detect the intensity of the light. Further, while controlling the driving unit 41 and the detection unit 75, the control unit 1100 acquires the position of the wavelength variable unit 140 where the intensity of the light is detected by the detection unit 75.

[0048] Accordingly, the control unit 1100 acquires information (hereinafter referred to as intensity characteristic information) representing the relationship between the position in the X-axis direction of the wavelength variable unit 140 moved by the drive unit 41 and the intensity of the light transmitted through the wavelength variable member 142 and the aperture 143. Here, the predetermined movement amount by which the wavelength variable unit 140 is moved by the drive unit 41 is not always the same movement amount. For example, in order to shorten the detection time, the control unit 1100 may move the wavelength variable unit 140 by different movement amounts according to the position in the X-axis direction of the wavelength variable unit 140. For example, when the position where light is incident on the wavelength variable unit 140 is the position of the aperture 143 and the wavelength variable member 142, the movement amount may be reduced, and when it is a position other than the aperture 143 and the wavelength variable member 142, the movement amount may be increased.

[0049] Here, the intensity characteristic information will be described. FIG. 2(c) is a diagram showing an example of the intensity characteristic information of the wavelength variable unit 140. In the graph shown in FIG. 2(c), the horizontal axis represents the position in the X-axis direction of the wavelength variable unit 140, and the vertical axis represents the intensity of the light detected by the detection unit 75. Also, waveform I43 represents the change in the intensity of the light transmitted through the aperture 143, and waveform I42 represents the change in the intensity of the light transmitted through the wavelength variable member 142. Also, let the positions where the intensities are maximum in waveforms I42 and I43 be X42 and X43, respectively.

[0050] Also, in S122, the control unit 1100 determines the position X in the X-axis direction of the wavelength variable unit 140 based on the relative distance and the intensity characteristic information of the light transmitted through the aperture 143. Next, a method for determining the position X in the X-axis direction of the wavelength variable unit 140 will be described. When determining the position of the wavelength variable unit 140, it is conceivable to determine it at the position where the intensity is maximum based on the intensity characteristic information as shown in Fig. 2(c). That is, the position X can be set such that the position X42 where the intensity is maximum in the waveform I42 in Fig. 2(c) becomes the position in the X-axis direction of the wavelength variable unit 140. Also, the position X42 where the intensity is maximum in the waveform I42 is calculated, for example, by setting a slice level and obtaining the centroid position. However, as shown in Fig. 2(c), when the amount of change in intensity is small near the peak of the waveform I42, it may be difficult to accurately calculate the position X42 in the X-axis direction where the intensity is maximum.

[0051] Therefore, in the present embodiment, based on the relative distance dX and the position X43 obtained based on the intensity characteristic information, the control unit 1100 obtains the position X where the wavelength of the light transmitted through the wavelength variable member 142 becomes the wavelength of the light used for measurement. Here, the position X43 where the intensity is maximum in the waveform I43 is calculated, for example, by setting a slice level and calculating the centroid position. Also, as shown in Fig. 2(c), since the amount of change in intensity near the peak of the waveform I43 is larger than the amount of change in intensity in the waveform I42, the position X43 of the waveform I43 can be calculated more accurately.

[0052] When the wavelength of the light used for measurement is λ, the control unit 1100 obtains the relative distance based on the waveform characteristic information. Then, the control unit 1100 obtains the position X in the X-axis direction of the wavelength variable unit 140 based on the relative distance and the position X43 where the intensity is maximum in the waveform I43. Here, let the position in the X-axis direction of the wavelength variable unit 140 where the intensity is maximum in the waveform I43 be X43. Also, let the relative distance dX from the aperture 143 be such that the wavelength of the light transmitted through the wavelength variable member 142 becomes λ. The position X in the X-axis direction of the wavelength variable unit 140 is represented by the following formula (2). X = X43 - dX ···(2)

[0053] In this way, based on the relative distance and the intensity characteristic information of the light transmitted through the aperture 143, the control unit 1100 determines the position X in the X-axis direction of the wavelength variable unit 140 such that the wavelength of the light used for measurement is λ.

[0054] Note that the control unit 1100 may set measurement conditions other than the wavelength of the light used for measurement based on the intensity characteristic information acquired in S122. Measurement conditions other than the wavelength of the light used for measurement include, for example, the σ value, polarization, and the like. By appropriately setting the measurement conditions, the position of the pattern provided on the substrate 73 can be accurately measured.

[0055] Here, returning to the description of Fig. 2(b). In S123, the control unit 1100 moves the wavelength variable unit 140 by the driving unit 41 so that the position in the X-axis direction of the wavelength variable unit 140 becomes the determined position X. As a result, the light transmitted through the wavelength variable member 142 has a wavelength of λ and irradiates the substrate 73. Note that the control unit 1100 can determine the position to which the wavelength variable unit 140 should be moved from the position X in the X-axis direction of the wavelength variable unit 140 based on the position of the wavelength variable unit 140 at which the intensity of the light is detected by the detection unit 75 and acquired in S122.

[0056] In S124, the control unit 1100 causes the measurement unit 150 to detect the pattern 72. The pattern 72 provided on the substrate 73 is illuminated by the light emitted from the light source 61, and an image of the pattern 72 is acquired by the imaging device. As a result, a detection signal is acquired (detected) based on the obtained captured image.

[0057] In S125, the control unit 1100 measures the position of pattern 72 based on the detection signal of pattern 72. Also, for example, when measuring the superposition error of a plurality of patterns 72 provided on different layers of the substrate 73, the control unit 1100 calculates the measured values of the positions of the respective patterns based on the detection signals of the patterns 72 provided on each layer of the substrate 73. Then, the control unit 1100 obtains the relative position, which is the difference between those measured values, as the superposition error.

[0058] Here, in this embodiment, the configuration in which the measuring unit 150 has one wavelength variable unit 140 and one driving unit 41 each has been described, but it is not limited to such a configuration. For example, the measuring unit 150 may be configured to include a plurality of wavelength variable units and a plurality of driving units. The measuring unit 150 may have, for example, a first wavelength variable unit having a wavelength cut filter that cuts light with a wavelength longer than the first wavelength, and a second wavelength variable unit having a wavelength cut filter that cuts light with a wavelength shorter than the second wavelength. In this case, the first wavelength variable unit and the second wavelength variable unit are arranged at positions conjugate to the light emitting point of the light source 61. Thereby, the control unit 1100 can irradiate the substrate 73 with light having a desired center wavelength and wavelength band by controlling the positions of the first wavelength variable unit and the second wavelength variable unit respectively.

[0059] As described above, according to the measuring apparatus according to this embodiment, since the position of the wavelength variable member is determined based on the relative distance between the wavelength variable member and the aperture and the intensity characteristic information of the light transmitted through the aperture, the wavelength shift of the light irradiated on the substrate can be reduced. Then, by illuminating the substrate with light of a desired wavelength, the intensity of the detection signal of the light is improved, and the error of the detection signal can be reduced.

[0060] <Second Embodiment> Next, the measuring device according to the present embodiment will be described. Matters not mentioned here may follow the first embodiment. In the present embodiment, a form using a wavelength variable unit having a plurality of openings will be described. FIG. 3 is a diagram for explaining the measuring device and the measuring method according to the present embodiment. FIG. 3(a) is a diagram showing the wavelength variable unit 240. The wavelength variable unit 240 includes a wavelength variable member 242, a first opening forming member 244a, a second opening forming member 244b, and a holding member 245. The first opening forming member 244a and the second opening forming member 244b each have a first opening 243a and a second opening 243b that transmit incident light, and are arranged at different positions in the X-axis direction with respect to the wavelength variable member 242. In the example of FIG. 3(a), the first opening forming member 244a and the second opening forming member 244b are arranged near both ends of the wavelength variable member 242. The first opening 243a and the second opening 243b are respectively arranged in the same plane (XY plane) perpendicular to the optical axis of the wavelength variable member 242. Further, the lengths and shapes of the first opening 243a and the second opening 243b in the longitudinal direction (X-axis direction) are the same as those of the opening 143 shown in FIG. 1(c).

[0061] The first opening forming member 244a and the second opening forming member 244b block light incident on the peripheral regions of the first opening 243a and the second opening 244b, respectively, including the regions between the first opening 243a and the second opening 243b and the wavelength variable member 242. The holding member 245 holds the wavelength variable member 242, the first opening forming member 244a, and the second opening forming member 244b.

[0062] FIG. 3(b) is a diagram showing an example of wavelength characteristic information of the wavelength variable unit 240. Here, the method for acquiring the wavelength characteristic information of the wavelength variable unit 240 is the same as the method for acquiring the wavelength characteristic information of the wavelength variable unit 140 in the first embodiment. In the graph shown in FIG. 3(b), the horizontal axis represents the position in the X-axis direction of the wavelength variable unit 240, and the vertical axis represents the wavelength (for example, the center wavelength) of the light detected by the detection unit 75. Also, the waveforms W43a and W43b represent the changes in the wavelengths of the light transmitted through the first aperture 243a and the second aperture 243b, respectively, and the waveform W42 represents the change in the wavelength of the light transmitted through the wavelength variable member 242. Further, the positions X3a and X3b represent the respective center positions of the first aperture 243a and the second aperture 243b.

[0063] FIG. 3(c) is a diagram showing an example of intensity characteristic information of the wavelength variable unit 240. In the graph shown in FIG. 3(c), the horizontal axis represents the position in the X-axis direction of the wavelength variable unit 240, and the vertical axis represents the intensity of the light detected by the detection unit 75. Also, the waveforms I43a and I43b represent the changes in the intensities of the light transmitted through the first aperture 243a and the second aperture 243b, respectively, and the waveform I42 represents the change in the intensity of the light transmitted through the wavelength variable member 242. Further, let the positions where the intensities are maximum in the waveforms I42, I43a, and I43b be X42, X43a, and X43b, respectively.

[0064] In the present embodiment, the control unit 1100 acquires a first relative distance between the light incident position in the wavelength variable unit 240 and the aperture 243a such that the wavelength of the light transmitted through the wavelength variable member 242 becomes λ. Further, the control unit 1100 acquires a second relative distance between the light incident position in the wavelength variable member 242 and the aperture 243b such that the wavelength of the light transmitted through the wavelength variable member 242 becomes λ. When the position in the X-axis direction of the wavelength variable unit 240 where the wavelength of the light transmitted through the wavelength variable member 242 becomes λ is X2, the first relative distance dXa and the second relative distance dXb are represented by the following formulas (3) and (4). dXa = X3a - X2 ···(3) dXb = X3b - X2 ···(4)

[0065] Then, based on the relative position information including the first relative distance dXa and the second relative distance dXb, and the intensity characteristic information of the light transmitted through the apertures 243a and 243b, the control unit 1100 determines the position X in the X-axis direction of the wavelength variable unit 240 at which the wavelength of the light used for measurement is λ. The position X in the X-axis direction of the wavelength variable unit 240 is represented by any one of the following formulas (5) to (7). X = X43a - dXa ···(5) X = X43b - dXb ···(6) X = {(X43a - dXa) + (X43b - dXb)} / 2 ···(7)

[0066] The position X can be determined using either of the formulas (5) and (6). However, by selecting according to the position of the wavelength variable unit 240 before driving, the time required for driving the wavelength variable unit 240 can be shortened. For formula (7), based on the average value of the relative positions of the wavelength variable member 242 and the apertures 243a and 243b respectively, by determining the position X in the X-axis direction of the wavelength variable unit 240, the position of the wavelength variable unit 240 can be determined more accurately.

[0067] Also, by using the wavelength variable unit 240, the deviation between the driving direction by the driving unit 41 and the direction in which the wavelength variable unit 240 is arranged can be corrected. FIG. 3(d) is a diagram showing an example in which a deviation occurs between the driving direction (X-axis direction) by the driving unit 41 and the direction (V-axis direction) in which the wavelength variable unit 240 is arranged. Here, the V-axis direction is a direction along the XY plane and is inclined by a predetermined angle with respect to the driving direction (X-axis direction) in which the wavelength variable unit 240 is driven by the driving unit 41.

[0068] Also, FIG. 3(e) is a diagram showing the relationship between the position in the X-axis direction of the wavelength variable unit 240 and the wavelength of the light. When the driving direction of the wavelength variable unit 240 is deviated from the V-axis direction to the X-axis direction, the wavelength changes from W402 to W401. Thus, due to the occurrence of a deviation in the driving direction of the wavelength variable unit 240, the wavelength of the light transmitted through the wavelength variable member 242 deviates from the desired wavelength, and the measurement accuracy may decrease.

[0069] Therefore, the control unit 1100 obtains the position X of the wavelength variable unit 240 in the X-axis direction based on the wavelength characteristic information of the wavelength variable unit 240 and the intensity characteristic information of the wavelength variable unit 240, and determines the position of the wavelength variable unit 240. Here, the wavelength characteristic information of the wavelength variable unit 240 shown in FIG. 3(b) is information acquired in advance, and represents the change in wavelength with respect to the position along the V-axis direction in FIG. 3(d). Further, the intensity characteristic information of the wavelength variable unit 240 shown in FIG. 3(d) is information acquired by driving the wavelength variable unit 240 in the X-axis direction by the driving unit 41, and represents the change in intensity with respect to the position along the X-axis direction in FIG. 3(d). Then, the control unit 1100 obtains the first distance (X3b - X3a) between the first aperture 243a and the second aperture 243b from the waveform characteristic information shown in FIG. 3(b). Further, the control unit 1100 obtains the second distance (X43b - X43a) between the first aperture 243a and the second aperture 243b from the intensity characteristic information shown in FIG. 3(c). Then, the control unit 1100 obtains the position X of the wavelength variable unit 240 in the X-axis direction and determines the position of the wavelength variable unit 240 based on the first distance obtained from the waveform characteristic information and the second distance obtained from the intensity characteristic information. Here, the value obtained by dividing the second distance by the first distance is defined as the parameter α as shown in the following formula (8). α = (X43a - X43b) / (X3a - X3b) ···(8)

[0070] Then, the control unit 1100 uses the parameter α to obtain the aforementioned first relative distance dXa and second relative distance dXb according to formulas (9) and (10), respectively. dXa = α × (X3a - X2) ···(9) dXb = α × (X3b - X2) ···(10)

[0071] Then, the control unit 1100 obtains the position X of the wavelength variable unit 240 in the X-axis direction by any one of the aforementioned formulas (5) to (7). Thereby, the position X of the wavelength variable unit 240 in the X-axis direction is obtained as a value in which the deviation between the driving direction by the driving unit 41 and the direction in which the wavelength variable unit 240 is arranged is corrected. The control unit 1100 determines the position of the wavelength variable unit 240 based on the corrected position X.

[0072] Further, the parameter α is information indicating the degree of deviation between the driving direction by the driving unit 41 and the direction in which the wavelength variable unit 240 is arranged. Therefore, the control unit 1100 can determine whether the driving direction (driving direction) in which the wavelength variable unit 240 is driven by the driving unit 41 is normal by determining whether the parameter α is within a predetermined allowable range. When it is determined that the driving direction is not normal (abnormal), the control unit 1100 stops the process of measuring the pattern 72 or notifies the user that the driving direction is determined to be abnormal. When it is notified that the determination is abnormal, the user can correct the deviation of the driving direction by adjusting the mounting position of the wavelength variable unit 240, the feeding position by the driving unit 41, etc.

[0073] As described above, according to the measuring device according to the present embodiment, since the position of the wavelength variable unit is determined based on the relative position information between the wavelength variable member and the opening and the intensity characteristic information of the light transmitted through the opening, the wavelength shift of the light irradiated on the substrate can be reduced. Further, by using a wavelength variable unit having a plurality of openings, the position of the wavelength variable unit can be determined more accurately. And by illuminating the substrate with light of a desired wavelength, the intensity of the light detection signal is improved and the error of the detection signal can be reduced.

[0074] <Third Embodiment> Next, the measuring device according to this embodiment will be described. Matters not mentioned here may follow the first or second embodiment. In this embodiment, a form of determining the position of the wavelength variable unit using a spectroscopic detection unit that detects the wavelength of light will be described. FIG. 4 is a diagram for explaining the measuring device and the measuring method according to this embodiment. FIG. 4(a) is a diagram showing the configuration of the measurement unit 350. The measurement unit 350 corresponds to the measurement unit 50 shown in FIG. 11(a), and is different from the measurement unit 50 in that it has an optical branching unit 376, a lens 377, and a spectroscopic detection unit 378. Since the other configurations of the measurement unit 350 are the same as those of the measurement unit 50, the description thereof will be omitted.

[0075] The spectroscopic detection unit 378 receives a part of the light transmitted through the wavelength variable unit 40 via the optical branching unit 376 and the lens 377, and detects the wavelength of the light. The light emitted from the light source 61 passes through the wavelength variable unit 40, is branched by the optical branching unit 376, and a part of the light is detected by the spectroscopic detection unit 378 via the lens 377. The optical branching unit 376 is, for example, a beam splitter that branches the incident light into transmitted light and reflected light at a predetermined branching ratio. The spectroscopic detection unit 378 is composed of a spectroscopic unit that disperses light by wavelength and a detection unit that detects the dispersed light. The incident light is dispersed by wavelength by the spectroscopic unit and then detected by the detection unit. The spectroscopic unit and the detection unit are, for example, a diffraction grating and an imaging element, respectively.

[0076] Also, the detection unit 175 may be provided with a spectroscopic unit that disperses light by wavelength and a detection unit that detects the dispersed light so that the wavelength of the light can also be detected. That is, the detection unit 175 may have a function of detecting the wavelength and intensity of light, and the control unit 1100 may be configured to acquire the wavelength and intensity of light based on the detection result by the detection unit 175.

[0077] Next, the measuring method for measuring the position of the pattern according to this embodiment will be described. FIG. 4(b) is a flowchart showing the measuring method for measuring the position of the pattern. The difference from the measuring method shown in FIG. 2(b) is the step S132, so the description of the other steps will be omitted.

[0078] In S132, the control unit 1100 moves the wavelength variable unit 40 in the X-axis direction by a minute distance by the drive unit 41. The control unit 1100 causes the spectroscopic detection unit 378 to detect the wavelength of the light transmitted through the wavelength variable member 42. The control unit 1100 controls the drive unit 41 and the spectroscopic detection unit 378 so as to repeatedly move the wavelength variable unit 40 and detect the wavelength of the light. Here, the spectroscopic detection unit 378 detects the wavelength of the light by spectroscopically analyzing the light using spectroscopic means. That is, the spectroscopic detection unit 378 acquires the wavelength information of the light by detecting the light spectroscopically separated for each waveform via the spectroscopic means. Thereby, the control unit 1100 acquires information (hereinafter referred to as wavelength characteristic information) representing the relationship between the position of the wavelength variable unit 40 moved by the drive unit 41 in the X-axis direction and the wavelength of the light transmitted through the wavelength variable member 42. Further, the wavelength characteristic information acquired in the present embodiment is the same as the waveform W42 in FIG. 2(a) of the first embodiment.

[0079] Here, the minute distance by which the wavelength variable unit 40 is moved is not limited to an equal distance. For example, in order to shorten the detection time, the control unit 1100 may move the wavelength variable unit 140 by different distances according to the position in the X-axis direction by the drive unit 41. For example, the distance may be shortened at the position of the wavelength variable member 42 and lengthened at positions other than the wavelength variable member 42 in the X-axis direction of the wavelength variable unit 140.

[0080] Further, in S132, the control unit 1100 determines the position X in the X-axis direction of the wavelength variable unit 40 at which the wavelength of the light used for measurement becomes λ based on the acquired wavelength characteristic information.

[0081] Further, the process of acquiring the wavelength characteristic information does not necessarily have to be performed every time pattern detection and measurement are performed. For example, when the wavelength of the light used for measurement does not change to λ, the control unit 1100 may not perform the process of acquiring the wavelength characteristic information and may use the same position X as the previous time. Further, the control unit 1100 may perform the process of acquiring the wavelength characteristic information when the elapsed time since the wavelength characteristic information was acquired last time or the number of times the measurement process has been performed exceeds a threshold value. Thereby, the time required for the process of measuring the pattern can be shortened.

[0082] As described above, according to the measuring device according to the present embodiment, since the position of the wavelength variable unit is determined based on the wavelength characteristic information acquired by the measuring device, the wavelength shift of the light irradiated on the substrate can be reduced. Then, by illuminating the substrate with light of a desired wavelength, the intensity of the detection signal of the light can be improved, and the error of the detection signal can be reduced.

[0083] <Fourth Embodiment> Next, the measuring device according to the present embodiment will be described. Matters not mentioned here may follow the first to third embodiments. In the present embodiment, a form of determining the position of the wavelength variable unit using a wavelength switching unit that switches the wavelength of light will be described. FIG. 5 is a diagram for explaining the measuring device and the measuring method according to the present embodiment. FIG. 5(a) is a diagram showing the configuration of the measuring unit 450. The measuring unit 450 corresponds to the measuring unit 50 shown in FIG. 11(a), and is different from the measuring unit 50 in that it has a wavelength switching unit 430. Since the other configurations of the measuring unit 450 are the same as those of the measuring unit 350 of the third embodiment, the description thereof will be omitted.

[0084] FIG. 5(b) is a diagram showing the wavelength switching unit 430 in the present embodiment. The wavelength switching unit 430 has a plurality of wavelength filters 431a to 431f and a holding member 435. The wavelength switching unit 430 transmits the light emitted from the light source 61 through any one of a plurality of wavelength filters that make the wavelengths of the transmitted light different from each other, and makes it incident on the wavelength variable unit 40. Further, the wavelength switching unit 430 is driven in the rotation (θZ) direction around the Z axis by a driving unit (not shown), and by switching the wavelength filter disposed at the position where the light is incident, the wavelength of the light incident on the wavelength variable unit 40 can be changed. The wavelength filters 431a to 431f change the transmitted light to different wavelengths, but within the plane of each wavelength filter, the wavelength is changed within a predetermined range.

[0085] Next, a measurement method for measuring the position of the pattern according to the present embodiment will be described. FIG. 5(c) is a flowchart showing the measurement method for measuring the position of the pattern. Since the differences from the measurement methods shown in FIGS. 2(b) and 3(b) are steps S142 and S143, descriptions of the other steps will be omitted.

[0086] In S142, the control unit 1100 rotates and moves the wavelength switching unit 430 in the θZ direction by a driving unit (not shown), and positions the wavelength switching unit 430 so that any one of the plurality of wavelength filters is disposed on the optical path of light. Further, with the wavelength switching unit 430 positioned, the control unit 1100 moves the wavelength variable unit 140 in the X-axis direction by a minute distance by the driving unit 41. The control unit 1100 causes the detection unit 75 to detect the intensity of the light that has passed through the wavelength switching unit 430 and the wavelength variable member 42. The control unit 1100 controls the driving unit 41 and the detection unit 75 so as to repeatedly perform the movement of the wavelength variable member 42 and the detection of the light intensity. Further, while controlling the driving unit 41 and the detection unit 75, the control unit 1100 acquires the position of the wavelength variable unit 140 at which the light intensity has been detected by the detection unit 75.

[0087] Next, referring to FIG. 6, the intensity characteristic information obtained in S142 will be described. FIG. 6(a) is a diagram showing an example of the wavelength of light transmitted through any one of a plurality of wavelength filters (for example, wavelength filter 431b). Here, the wavelength band of the light transmitted through the wavelength filter 431b is set to the wavelength band from wavelength W23S to wavelength W23L. Further, FIG. 6(b) is a diagram showing an example of the wavelength of light transmitted through the wavelength variable member 42. That is, the wavelength switching unit 430 functions as a wavelength limiting unit that limits the wavelength band of the light from the light source to a predetermined range. Here, the wavelength band of the light transmitted through the wavelength variable member 42 when light is incident on the wavelength variable member 42 at a predetermined position is set to the wavelength band from wavelength W24S to wavelength W24L. Here, the position of the light incident on the wavelength variable member 42 is moved in the X-axis direction in the wavelength variable member 42 by moving the wavelength variable unit 40 in the X-axis direction by the drive unit 41. For this reason, the light transmitted through the wavelength variable member 42 shown in FIG. 6(b) changes in wavelength along with the change in the positions of wavelength W24S and wavelength W24L according to the position of the wavelength variable unit 40 in the X-axis direction.

[0088] FIG. 6(c) is a diagram showing an example of the intensity characteristic information obtained in S142. In the graph shown in FIG. 6(c), the horizontal axis represents the position of the wavelength variable unit 40 in the X-axis direction, and the vertical axis represents the intensity of the light detected by the detection unit 75. Also, the waveform I200 represents the relationship between the position of the wavelength variable unit 40 in the X-axis direction and the intensity of the light detected by the detection unit 75. Here, when light is incident at a position where W24L, which is the maximum value of the wavelength band of the light transmitted through the wavelength variable member 42, is smaller than W23S, which is the minimum value of the wavelength band of the light transmitted through the wavelength filter 431b, the intensity of the light detected by the detection unit 75 becomes 0. Also, when light is incident at a position where W24S, which is the minimum value of the wavelength band of the light transmitted through the wavelength variable member 42, is larger than W23L, which is the maximum value of the wavelength band of the light transmitted through the wavelength filter 431b, the intensity of the light detected by the detection unit 75 also becomes 0. On the other hand, when light is incident at a position where at least a part of the wavelength band of the light transmitted through the wavelength variable member 42 overlaps with the wavelength band of the light transmitted through the wavelength filter 431b, the intensity of the light detected by the detection unit 75 becomes 0 or more.

[0089] FIG. 6(d) is a diagram showing an example of the differential value of the light intensity with respect to the position of the wavelength variable section. In the graph shown in FIG. 6(d), the horizontal axis is the position in the X-axis direction of the wavelength variable section 40, and the vertical axis is the differential value of the light intensity (waveform I200) with respect to the position in the X-axis direction of the wavelength variable section 40. Further, waveform I201 represents the relationship between the position in the X-axis direction of the wavelength variable section 40 and the differential value of the light intensity detected by the detection unit 75. Waveform I201 has two peaks at the positions where I200 changes. Here, let the positions of the two peaks be X20S and X20L.

[0090] Here, the waveform I200 shown in FIG. 6(c) changes from 0 to the maximum value and from the maximum value to 0 more steeply compared to I42 shown in FIGS. 2(c) and 3(c). That is, the peak positions X20S and X20L of the waveform I201 shown in FIG. 6(d) can be accurately obtained. This is because the wavelength band of the light incident on the wavelength variable section 40 by the wavelength switching section 430 is limited to a certain range.

[0091] Here, returning to the description of FIG. 5(c). In S143, the control unit 1100 determines whether to update the position of the wavelength variable section 40. Specifically, the control unit 1100 acquires the peak positions X20S and X20L of the waveform I201 and determines whether the change amounts of the positions X20S and X20L are larger than a predetermined threshold value. In S143, if it is determined that the change amounts of the positions X20S and X20L are larger than the predetermined threshold value, the control unit 1100 proceeds to S144 for processing.

[0092] In S144, the control unit 1100 corrects the wavelength characteristic information based on the change amounts of the positions X20S and X20L. Further, the control unit 1100 determines the position X in the X-axis direction of the wavelength variable section 140 based on the corrected wavelength characteristic information, and the control unit 1100 proceeds to S123 for processing.

[0093] On the other hand, in S143, if it is determined that the change amounts of the positions X20S and X20L are smaller than the predetermined threshold value, the control unit 1100 proceeds to S124 for processing.

[0094] Here, an example of obtaining the intensity characteristic of the light transmitted through the wavelength variable section 40 using one wavelength filter has been described, but the application scope of the present embodiment is not limited thereto. For example, by using a plurality of wavelength filters to obtain a plurality of intensity characteristic information and obtaining the average value of the change amounts of the positions X20S and X20L, the correction value of the position of the wavelength variable section 40 can be accurately obtained.

[0095] As described above, according to the measuring apparatus according to the present embodiment, since the correction value of the position of the wavelength variable section is determined based on the intensity characteristic information acquired by the measuring apparatus, the wavelength shift of the light irradiated on the substrate can be reduced. Then, by illuminating the substrate with light of a desired wavelength, the intensity of the detection signal of the light is improved, and the error of the detection signal can be reduced.

[0096] <Fifth Embodiment> Next, the measuring apparatus according to the present embodiment will be described. Matters not mentioned here may follow the first to fourth embodiments. In the present embodiment, a form of correcting the wavelength characteristic information based on the intensity characteristic information of the light reflected by the substrate and determining the position of the wavelength variable section 140 in the X-axis direction will be described. FIG. 7 is a diagram for explaining the measuring apparatus and the measuring method according to the present embodiment. FIG. 7(a) is a diagram showing the configuration of the measuring section 550. The measuring section 550 corresponds to the measuring section 50 shown in FIG. 11(a) and has the same configuration as the measuring section 50. Therefore, the description of the configuration of the measuring section 550 will be omitted.

[0097] FIG. 7(b) is a diagram showing the substrate 573 used in the present embodiment and the light reflected by the substrate 573. The substrate 573 is formed with a first layer 573B and a second layer 573U formed on the first layer 573B. A pattern 572 is provided in the first layer 573B of the substrate 573, and the pattern 572 is formed from a recess. Let the width of the pattern 572 in the X-axis direction be LW, and let the height from the bottom surface of the recess to the upper surface of the first layer 573B of the pattern 572 be h. Let the height from the upper surface of the first layer 573B to the second layer 573U be L1.

[0098] Of the light incident on the substrate 573, let the light incident on the region with the pattern 572 be I1, and the light incident on the region other than the region with the pattern 572 be I2. Also, the light I1 becomes the reflected light in which the light I1B reflected from the lower surface of the first layer 573B and the light I1U reflected from the upper surface of the second layer 573U interfere. Further, the light I2 becomes the reflected light in which the light I2B reflected from the upper surface of the first layer 573B and the light I2U reflected from the upper surface of the second layer 573U interfere.

[0099] Here, let the amplitudes of the lights I1B, I1U, I2B, and I2U be A 1B , A 1U , A 2B , A 2U respectively. Let the phase difference between the reflected lights I1B and I1U be φ1, and the phase difference between the reflected lights I2B and I2U be φ2. The intensities i1 and i2 of the lights I1 and I2 reflected by the substrate 573 are respectively expressed by the following equations (11) and (12). i1 = A 1B 2 + A 1U 2 + 2A 1B A 1U · cos φ1 ···(11) i2 = A 2B 2 + A 2U 2 + 2A 2B A 2U · cos φ2 ···(12)

[0100] For example, assuming that the refractive index n B of the first layer 573B and the refractive index n U of the second layer 573U have the relationship of the following equation (13), 1 > n U > n B ···(13) When the phase difference between the light I1B and the light I1U is an integral multiple of the wavelength, the phases of the light I1B and the light I1U are aligned, the light I1B and the light I1U reinforce each other, and the intensity of the light I1 detected by the detection unit 75 increases. On the other hand, when the phase difference between the light I1B and the light I1U is an integral multiple of the half-wavelength, the light I1B and the I1U weaken each other, and the intensity of the light I1 detected by the detection unit 75 decreases.

[0101] FIG. 7(c) is a diagram showing an example of the intensities of the lights I1 and I2 detected by the detection unit 75. The light I1 is weakened by the interference of the lights I1B and I1U, the light I2 is strengthened by the interference of the lights I2B and I2U, and an example is shown in which the intensity I1 of the light I1 is smaller than the intensity I2 of the light I2.

[0102] FIG. 7(d) shows the changes in the intensities of the lights I1 and I2 when the wavelength variable unit 40 is driven by the drive unit 41 to change the wavelength. The horizontal axis represents the wavelengths of the lights I1 and I2, and the vertical axis represents the intensities of the lights I1 and I2. Also, the waveforms S1 and S2 represent the changes in the intensities of the lights I1 and I2, respectively. The change in the intensity of light due to the interference of light changes according to the phase difference and wavelength of the light. Also, the phase differences φ1 and φ2 are the height h, L1, and the refractive index n of the second layer 573U U are respectively represented by the following formulas (13) and (14). φ1 = 2n U (L1 + h) ···(13) φ2 = 2n U h ···(14)

[0103] Therefore, if the lights I1 and I2 are detected using the same substrate with the height h, L1, and the refractive index n of the second layer 573U U the same intensity changes as the waveforms S1 and S2 shown in FIG. 7(d) can be detected. Also, when the wavelength variable unit 40 is driven by the drive unit 41 to change the wavelength, if a wavelength shift occurs, the waveforms S1 and S2 shift in the horizontal axis direction.

[0104] Therefore, in this embodiment, based on the information indicating the relationship between the wavelength and the light intensity acquired in advance and the information on the light intensity detected by the detection unit 75 by driving the wavelength variable unit 40 by the driving unit 41, the wavelength characteristic information is corrected to determine the position of the wavelength variable unit 140 in the X-axis direction. Specifically, the change amount in the horizontal axis direction of the waveform of the detected light intensity with respect to the waveforms S1 and S2 in the relationship between the wavelength and the light intensity acquired in advance is obtained, and the wavelength characteristic information is corrected according to the obtained change amount. Then, based on the corrected wavelength characteristic information, the position of the wavelength variable unit 140 in the X-axis direction is determined. Also, the wavelength characteristic information can be corrected based on either of the waveforms S1 and S2, but by using the two pieces of information, the wavelength characteristic information can be corrected with high accuracy.

[0105] Further, instead of the information indicating the relationship between the wavelength and the light intensity, information indicating the relationship between the wavelength and the contrast may be used. The contrast Cnt can be obtained as follows in Equation (15) using the light intensities i1 and i2. Cnt=(i2 - i1) / (i2 + i1) ···(15)

[0106] Further, instead of the substrate 573 on which the pattern 572 formed in the concave portion is formed, a substrate on which a plurality of patterns having different heights are formed may be used. FIG. 7(e) is a diagram showing a substrate 673 on which patterns 672 (first pattern) and 782 (second pattern) having different heights are formed. Let the height of the pattern 672 be h1 and the height of the pattern 682 be h2, and h1 and h2 are different from each other. When the light incident on the substrate 673 is reflected, depending on the height h1 of the pattern 672 and the height h2 of the pattern 682, the phase of the reflected light from the lower surfaces of the pattern 672 and the pattern 682 changes, resulting in a difference in the change in the light intensity with respect to the change in the wavelength. Therefore, similar to the case of using the substrate 573, the wavelength characteristic information can be corrected to determine the position of the wavelength variable unit 140 in the X-axis direction.

[0107] As described above, according to the measuring device according to the present embodiment, the wavelength characteristic information is corrected based on the intensity characteristic information of the light reflected by the substrate, and the position in the X-axis direction of the wavelength variable unit 140 is determined. Therefore, the wavelength shift of the light irradiated on the substrate can be reduced. Then, by illuminating the substrate with light of a desired wavelength, the intensity of the detection signal of the light is improved, and the error of the detection signal can be reduced.

[0108] <Sixth Embodiment> Next, the measuring device according to the present embodiment will be described. Matters not mentioned here may follow the first to fifth embodiments. In the measuring device 650 according to the present embodiment, the position where the wavelength variable unit 140 is arranged is different from that of the measuring device 150 according to the first embodiment and the like. FIG. 8 is a diagram for explaining the measuring device according to the present embodiment. In the measuring device 650, the wavelength variable unit 140 is arranged at a position where the light from the pattern 72 is reflected by the beam splitter 68 and incident on the detection unit 75.

[0109] The light (first light) irradiated from the light source 61 is incident on the illumination aperture stop 64 through the illumination optical system (first optical system) 63. The light transmitted through the illumination aperture stop 64 is incident on the beam splitter 68 through the relay lens 67. The light transmitted through the beam splitter 68 passes through the aperture stop 69, passes through the λ / 4 plate 70 and is converted into circularly polarized light, and illuminates the pattern 72 provided on the substrate 73 through the objective optical system 71 in Köhler illumination.

[0110] The light (second light) from the pattern 72 passes through the objective optical system 71, passes through the λ / 4 plate 70 and is converted from circularly polarized light to S-polarized light, and is incident on the aperture stop 69. The light transmitted through the aperture stop 69 is reflected by the beam splitter 68 and guided to the wavelength variable unit 140 through the imaging optical system (second optical system) 74. Then, the light transmitted through the wavelength variable unit 140 is incident on the detection unit 75 through the lens 76.

[0111] In this embodiment, based on the relationship between the position in a predetermined direction perpendicular to the optical axis of the wavelength variable unit 140 acquired in advance and the wavelength of the light transmitted through the wavelength variable unit 140, the wavelength variable unit 140 is aligned by the driving unit 41, so that light of a desired wavelength is incident on the detection unit 75. Here, the predetermined direction perpendicular to the optical axis is a direction perpendicular to the optical axis of the imaging optical system 74 or the lens 76, for example, the Z-axis direction or the Y-axis direction. The driving unit 41 not only drives the wavelength variable unit 140 in a predetermined direction perpendicular to the optical axis (for example, the Z-axis direction), but also drives it in a rotational direction around a predetermined axis perpendicular to the optical axis (for example, the θZ direction) to move the position of the wavelength variable unit 140 in a predetermined rotational direction.

[0112] As described above, according to the measuring apparatus according to this embodiment, by making light of a desired wavelength incident on the detection unit, the intensity of the detection signal of the light is improved, and the error of the detection signal can be reduced.

[0113] <Seventh Embodiment> In this embodiment, a form in which an exposure apparatus as a substrate processing apparatus has a measuring apparatus will be described. Matters not mentioned here may follow the first to fifth embodiments. Referring to FIG. 9, the exposure apparatus according to this embodiment will be described. The exposure apparatus EXA is a lithography apparatus that is used in a lithography process, which is a manufacturing process of devices such as semiconductor elements and liquid crystal display elements, and forms a pattern on a substrate 83. The exposure apparatus EXA performs an exposure process (processing on the substrate) of exposing the substrate 73 (wafer) through a reticle (master, mask) 31 and transferring the pattern of the reticle 31 to the substrate 83.

[0114] Here, the reticle 31 is a reticle, master, or mask on which a predetermined pattern such as a circuit pattern is formed, and is composed of, for example, quartz. The reticle 31 transmits the light illuminated by the illumination optical system 801 described later. The substrate 73 is an object to be processed on which the pattern of the reticle 31 is transferred, and is, for example, a silicon wafer, a glass plate, a film-like substrate, or other substrates to be processed. The substrate 83 is exposed in a state where a photoresist is applied, so that the pattern is transferred.

[0115] Here, as an example, a case will be described where a scanning exposure apparatus (scanner) that exposes a pattern formed on a reticle 31 onto a substrate 73 while moving the reticle 31 and the substrate 73 synchronously with each other in the scanning direction is used as the exposure apparatus EXA. Note that this embodiment can also be applied to an exposure apparatus (stepper) of a type that fixes the reticle 31 and exposes the reticle pattern onto the substrate 73.

[0116] The exposure apparatus EXA includes a light source unit 800, an illumination optical system 801, a reticle stage RS, a projection optical system 32, a substrate stage WS, a measurement unit 150, and a control unit 1100.

[0117] The light source unit 800 includes at least one light source among a mercury lamp, a KrF excimer laser, and an ArF excimer laser. Further, it may include a light source for extreme ultraviolet light (EUV light) having a wavelength of several nm to hundreds of nm.

[0118] The illumination optical system 801 shapes the light emitted from the light source unit 800 into slit light having a predetermined shape optimal for exposure, irradiates the reticle 31 held on the reticle stage RS, and illuminates a predetermined illumination region on the reticle 31. The illumination optical system 801 illuminates a predetermined illumination region on the reticle 31 with light having a uniform illuminance distribution. The illumination optical system 801 includes, for example, lenses, mirrors, an optical integrator, an aperture, etc., and is configured by arranging a condenser lens, a fly's eye lens, an aperture stop, a condenser lens, a slit, and an imaging optical system in this order.

[0119] The reticle stage RS holds and moves the reticle 31. The reticle stage RS is movable, for example, in a plane perpendicular to the optical axis of the projection optical system 32, that is, in the XY plane, and rotatable in the θZ direction. The reticle stage RS is driven by a driving device (not shown) such as a linear motor, and the driving device can be driven in the three axial directions of X, Y, and θZ and is controlled by the control unit 1100 described later. Note that although the driving device can be driven in three axial directions, it may be drivable in any of one axial direction to six axial directions.

[0120] The projection optical system 32 irradiates the substrate 73 held on the substrate stage WS with the light that has passed through the reticle 31, and projects an image of the pattern formed on the reticle 31 onto the substrate 73 at a predetermined projection magnification β. In this way, the substrate 73 is exposed by the light irradiated from the projection optical system 32, and a pattern is formed on the substrate 73. Further, the projection optical system 32 is composed of a plurality of optical elements, and the predetermined projection magnification β is, for example, 1 / 4 or 1 / 5.

[0121] Regarding the substrate stage WS, the description of the configuration common to the first embodiment will be omitted. A reference plate 39 having a reference mark is installed on the substrate stage WS. The height of the surface of the reference plate 39 is determined to be the same as the surface of the substrate 73 held on the substrate stage WS, and the measurement unit 150 also measures the position of the reference mark on the reference plate 39.

[0122] The control unit 1100 comprehensively controls each part of the exposure apparatus EXA including the measurement apparatus 100. Since the configuration of the control unit 1100 is the same as that of the first embodiment, the description thereof will be omitted.

[0123] Since the measurement unit 150 is the same as that of the first embodiment, the description thereof will be omitted. Further, in the present embodiment, a form in which the measurement apparatus and measurement method of the first embodiment are used will be described, but the measurement apparatus and measurement method of any one of the second to fifth embodiments may be used.

[0124] Next, with reference to FIG. 10, the exposure process according to the present embodiment will be described. The exposure process shown in FIG. 10 is performed by the control unit 1100 comprehensively controlling each part of the exposure apparatus EXA.

[0125] In S101, the control unit 1100 causes the exposure apparatus EXA to carry in the substrate 73. In S102, the control unit 1100 causes a shape measurement apparatus (not shown) to detect the surface (height) of the substrate 73 and measure the surface shape of the entire area of the substrate 73.

[0126] In S103, the control unit 1100 performs calibration. Specifically, based on the position of the reference mark provided on the reference plate 39, the control unit 1100 drives the substrate stage WS so that the reference mark is positioned on the optical axis of the measuring device 150. Next, the control unit 1100 measures the positional deviation of the reference mark with respect to the optical axis of the measuring unit 150, and based on such positional deviation, re-sets the coordinate system of the substrate stage WS so that the origin of the coordinate system of the substrate stage WS coincides with the optical axis of the measuring unit 150. Next, based on the positional relationship between the optical axis of the measuring device 150 and the optical axis of the projection optical system 32, the control unit 1100 drives the substrate stage WS so that the reference mark is positioned on the optical axis of the exposure light. Then, the control unit 1100 causes the TTL (through-the-lens) measurement system (not shown) to measure the positional deviation of the reference mark with respect to the optical axis of the exposure light via the projection optical system 32. In S104, the control unit 1100 determines the baseline between the optical axis of the measuring unit 150 and the optical axis of the projection optical system 32 based on the result of the calibration in S103.

[0127] Here, in order to measure the positional deviation of the reference mark in S103, the measurement process of the pattern shown in FIG. 2(b) is performed. The control unit 1100 measures the pattern included in the reference mark by the measuring unit 150. Also, when measuring a plurality of reference marks, it is not necessary to perform S121 to S123 in FIG. 2(b) for each of the plurality of reference marks. S121 to S123 in FIG. 2(b) may be performed, for example, for each predetermined number of measurement times or for each predetermined number of substrates 73 for which the exposure process is performed.

[0128] In S105, the control unit 1100 causes the measurement unit 150 to measure the position of the mark 72 provided on the substrate 73. In S106, the control unit 1100 performs global alignment. Specifically, based on the measurement result in S105, the control unit 1100 calculates the shift, magnification (magnification ratio), and rotation (rotation) regarding the arrangement of the shot regions of the substrate 73, and obtains the regularity of the arrangement of the shot regions. Then, a correction coefficient is obtained from the regularity of the arrangement of the shot regions and the baseline, and based on such correction coefficient, the substrate 73 is aligned (aligned) with respect to the reticle 31 (exposure light).

[0129] Here, in order to measure the position of the mark 72 in S105, the measurement process of the pattern shown in FIG. 2(b) is performed. The control unit 1100 measures the pattern included in the mark 72 by the measurement unit 150. Also, when measuring a plurality of marks 72, it is not necessary to perform S121 to S123 in FIG. 2(b) for each of the plurality of marks 72. S121 to S123 in FIG. 2(b) may be performed, for example, every predetermined number of measurement times or every predetermined number of substrates 73 for which the exposure process is performed.

[0130] In S107, the control unit 1100 exposes the substrate 73 while controlling the reticle stage RS and the substrate stage WS so as to scan the reticle 31 and the substrate 73 in the scanning direction (Y direction). At this time, based on the surface shape of the substrate 73 measured by the shape measurement device, the control unit 1100 drives the substrate stage WS in the Z direction and the tilt (tilt) direction, and sequentially aligns the surface of the substrate 73 with the imaging surface of the projection optical system 32.

[0131] In S108, the control unit 1100 determines whether the exposure of all the shot areas to be exposed on the substrate 73 has been completed (that is, whether there is no unexposed shot area among the shot areas to be exposed). If it is determined that the exposure of all the shot areas to be exposed has not been completed, the control unit 1100 causes the process to proceed to S107. That is, S107 and S108 are repeated until the exposure of all the shot areas to be exposed is completed. On the other hand, if it is determined that the exposure of all the shot areas to be exposed has been completed, the control unit 1100 causes the process to proceed to S109. In S109, the control unit 1100 unloads the substrate 73 from the exposure apparatus EXA.

[0132] <Method for manufacturing an article> As an article, for example, a method for manufacturing a device (such as a semiconductor device, a magnetic storage medium, a liquid crystal display element, etc.), a color filter, or a hard disk will be described. Such a manufacturing method includes a step of forming a pattern on a substrate (such as a wafer, a glass plate, a film-like substrate, etc.) using a lithography apparatus (such as an exposure apparatus, an imprint apparatus, a drawing apparatus, etc.). Such a manufacturing method further includes a step of processing the substrate on which the pattern has been formed. The processing step may include a step of removing the remaining film of the pattern. In addition, the processing step may include other well-known steps such as a step of etching the substrate using the pattern as a mask. The method for manufacturing an article in the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the prior art.

[0133] As described above, the preferred embodiments of the present invention have been described. Needless to say, the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist thereof.

[0134] In addition, as an example of a substrate processing apparatus, an exposure apparatus has been described, but the present invention is not limited thereto. As an example of a substrate processing apparatus, an imprint apparatus that forms a pattern of an imprint material on a substrate using a mold (die, template) having a concavo-convex pattern may be used. Further, as an example of a substrate processing apparatus, a planarization apparatus that forms a composition on a substrate so as to be planarized using a mold (flat template) having a flat portion without a concavo-convex pattern may be used. Further, as an example of a substrate processing apparatus, an apparatus such as a drawing apparatus that forms a pattern on a substrate by drawing a charged particle beam (such as an electron beam or an ion beam) on the substrate through a charged particle optical system may be used.

[0135] In addition, the first to seventh embodiments can be implemented not only individually but also in any combination of the first to sixth embodiments.

Claims

1. A measuring device for measuring the position of a pattern by detecting second light from the pattern illuminated by first light, comprising: a wavelength variable unit having a member that changes the wavelength transmitted by the first light according to the incident position where the first light is incident, and an aperture; a moving unit that moves the wavelength variable unit so that the wavelength of the first light transmitted through the member changes to a desired wavelength using the distance between the incident position of the first light on the member and the position of the aperture; A measuring device characterized by the above.

2. The measuring device according to claim 1, wherein the incident position is acquired based on wavelength characteristic information indicating the relationship between the position of the wavelength variable unit and the wavelength of the first light transmitted through the member.

3. The position of the wavelength variable unit when the first light is incident on the aperture is acquired based on intensity characteristic information indicating the relationship between the position of the wavelength variable unit and the intensity of the second light from the pattern illuminated by the first light transmitted through the wavelength variable unit. The measuring device according to claim 1 or 2, characterized by the above.

4. The intensity characteristic information is acquired based on the intensity of the second light acquired while moving the wavelength variable unit by the moving unit. The measuring device according to claim 3, characterized by the above.

5. The measuring device according to any one of claims 1 to 4, wherein the moving unit moves the wavelength variable unit along a predetermined direction in the plane of the wavelength variable unit irradiated with the first light.

6. The measuring device according to any one of claims 1 to 5, further comprising a first optical system that guides the first light irradiated from a light source to the wavelength variable unit.

7. The measuring device according to claim 3 or 4, further comprising a detection unit that detects the intensity of the second light from the pattern illuminated by the first light transmitted through the wavelength variable unit, and acquires the intensity characteristic information based on the intensity of the second light detected by the detection unit. The measuring device according to claim 7, further comprising a second optical system that guides the second light from the pattern to the detection unit.

8. The measuring device according to claim 7, further comprising a beam splitter that transmits the first light transmitted through the wavelength variable unit, branches the second light from the pattern, and guides it to the detection unit.

9. The measuring device according to claim 7 or 8, further comprising a beam splitter that transmits the first light transmitted through the wavelength variable unit, branches the second light from the pattern, and guides it to the detection unit.

10. By repeatedly moving the wavelength variable unit by a predetermined amount by the moving unit and detecting the intensity of the second light by the detection unit, the intensity characteristic information is obtained. The measuring device according to any one of claims 7 to 9, characterized in that.

11. By repeatedly moving the wavelength variable unit by an amount of movement that changes according to the position of the wavelength variable unit by the moving unit and detecting the intensity of the second light by the detection unit, the intensity characteristic information is obtained. The measuring device according to any one of claims 7 to 9, characterized in that.

12. It has a spectroscopic detection unit that detects the wavelength of the first light that has passed through the wavelength variable unit. Based on the position of the wavelength variable unit and the wavelength detected by the spectroscopic detection unit, the wavelength characteristic information is obtained. The measuring device according to claim 2, characterized in that.

13. Based on the intensity of the second light from the pattern and the intensity of the second light from a surface having a different height from the surface on which the pattern is formed, the wavelength characteristic information is corrected. The measuring device according to claim 2, characterized in that.

14. Based on the intensity of the second light from the first pattern included in the pattern and the intensity of the second light from the second pattern included in the pattern and having a different height from the first pattern, the wavelength characteristic information is corrected. The measuring device according to claim 13, characterized in that.

15. It has a control unit that controls the moving unit to move the wavelength variable unit to the determined position. The measuring device according to any one of claims 1 to 14, characterized in that.

16. A measuring device that measures the position of a pattern by detecting second light from the pattern illuminated by first light, A wavelength variable unit having a member that changes the wavelength transmitted by the second light according to the incident position where the second light is incident, and an opening; A moving unit that moves the wavelength variable unit so that the wavelength of the second light that has passed through the member changes to a desired wavelength using the distance between the incident position of the first light and the position of the opening in the member. A measuring device characterized by that.

17. A measuring method for measuring the position of a pattern by detecting second light from the pattern illuminated by first light, A wavelength variable unit having a member that changes the wavelength transmitted by the first light according to the incident position where the first light is incident, and an aperture, and moving the wavelength variable unit using the distance between the incident position of the first light on the member and the position of the aperture so that the wavelength of the first light transmitted through the member changes to a desired wavelength; measuring the position of the pattern by detecting the second light from the pattern illuminated by the first light transmitted through the member. A measurement method characterized by comprising: **Claim 18** A substrate processing apparatus that processes a substrate on which a pattern is formed, having the measuring apparatus according to any one of Claims 1 to 16, processing the substrate aligned based on the position of the pattern measured by the measuring apparatus A substrate processing apparatus characterized by this. **Claim 19** A measurement step of measuring the position of the pattern by detecting second light from the pattern formed on the substrate illuminated by the first light, an alignment step of aligning the substrate based on the position of the pattern measured in the measurement step, a processing step of processing the substrate aligned in the alignment step, and having manufacturing an article from the substrate processed in the processing step, wherein the measurement step is a wavelength variable unit having a member that changes the wavelength transmitted by the first light according to the incident position where the first light is incident, and an aperture, and moving the wavelength variable unit using the distance between the incident position of the first light on the member and the position of the aperture so that the wavelength of the first light transmitted through the member changes to a desired wavelength; measuring the position of the pattern by detecting the second light from the pattern illuminated by the first light transmitted through the member. A method for manufacturing an article characterized by this. **Claim 20** A measurement method for measuring the position of a pattern by detecting second light from the pattern illuminated by the first light, wherein the wavelength variable unit has a member that changes the wavelength transmitted by the second light according to the incident position where the second light is incident, and an aperture, and moving the wavelength variable unit using the distance between the incident position of the first light on the member and the position of the aperture so that the wavelength of the second light transmitted through the member changes to a desired wavelength; A step of measuring the position of the pattern by detecting the second light that has passed through the member illuminated by the first light, characterized in that the measuring method has this step.

21. A measuring step of measuring the position of the pattern by detecting the second light from the pattern formed on the substrate illuminated by the first light, An alignment step of aligning the substrate based on the position of the pattern measured in the measuring step, A processing step of processing the substrate aligned in the alignment step, and having Manufacturing an article from the substrate processed in the processing step, The measuring step is A wavelength variable unit having a member and an aperture that change the wavelength of the transmitted second light according to the incident position where the second light is incident, and using the distance between the incident position of the first light and the position of the aperture in the member, moving the wavelength variable unit so that the wavelength of the second light transmitted through the member changes to a desired wavelength, A step of measuring the position of the pattern by detecting the second light that has passed through the member illuminated by the first light, and having A method for manufacturing an article, characterized by this.

Images