Substrate Processing Apparatus and Substrate Processing Method

Abstract

A substrate processing apparatus according to an aspect of the present disclosure comprises a processing unit (40), a measuring unit (60), and a control unit (31). The processing unit (40) applies thermal energy and / or optical energy to an energy absorption layer (E) formed between a pair of substrates in a combined substrate (T), while holding one of the substrates, and delaminates the other substrate. The measuring unit (60) measures displacement of the other substrate in the processing unit (40). The control unit (31) controls the units. Further, the control unit (31) determines whether the other substrate has been delaminated, on the basis of the displacement of the other substrate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] In recent years, for example, in the manufacturing process of semiconductor devices, the diameter of semiconductor substrates such as silicon wafers and compound semiconductor wafers has been increasing and the thickness has been decreasing. A large-diameter and thin semiconductor substrate may warp or crack during transportation or polishing. Therefore, after bonding a support substrate to the semiconductor substrate for reinforcement, transportation and polishing are performed, and then the support substrate is peeled off from the semiconductor substrate (see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of improving the efficiency of the peeling process.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a processing unit, a measurement unit, and a control unit. The processing unit holds one of the substrates in a polymer substrate having an energy absorption layer formed between a pair of substrates, and applies at least one of thermal energy and light energy to the energy absorption layer to peel the other substrate. The measurement unit measures the displacement of the other substrate. The control unit controls each unit. Further, the control unit determines whether the other substrate has been peeled based on the displacement of the other substrate. Located inside The control unit controls each unit. Further, the control unit determines whether the other substrate has been peeled based on the displacement of the other substrate.

Effects of the Invention

[0006] According to the present disclosure, the peeling process can be made more efficient.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

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Figure 11

Embodiments for Carrying Out the Invention

[0008] Hereinafter, with reference to the accompanying drawings, embodiments of the substrate processing apparatus and the substrate processing method disclosed in the present application will be described in detail. Note that the present disclosure is not limited by the embodiments shown below. Also, the drawings are schematic, and it is necessary to note that the dimensional relationships between elements, the ratios of the elements, etc. may be different from reality. Furthermore, there may be portions where the dimensional relationships and ratios between the drawings are different from each other.

[0009] In recent years, for example, in the manufacturing process of semiconductor devices, the diameter of semiconductor substrates such as silicon wafers and compound semiconductor wafers has been increasing and the thickness has been decreasing. A large-diameter and thin semiconductor substrate may be warped or cracked during transportation or polishing.

[0010] Therefore, after bonding a support substrate to the semiconductor substrate for reinforcement, transportation and polishing are performed, and then the support substrate is peeled off from the semiconductor substrate. Also, in this peeling process, the periphery of the polymer substrate is covered with a chamber, and the support substrate is peeled off from the polymer substrate by heating the inside of the chamber.

[0011] On the other hand, in the above prior art, since the periphery of the polymer substrate is covered with a chamber, it was impossible to visually confirm whether the peeling process was completed. Therefore, since a heating time with a sufficient margin was set in advance and the peeling process was terminated after the elapse of such a heating time, it was difficult to perform the peeling process efficiently within a necessary and sufficient time.

[0012] Therefore, it is expected to realize a technology that can overcome the above problems and improve the efficiency of the peeling process.

[0013] <Configuration of the peeling system> First, the configuration of the peeling system 1 according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic plan view showing the configuration of the peeling system 1 according to the embodiment. Also, FIG. 2 is a schematic cross-sectional view of the polymer substrate T according to the embodiment.

[0014] In the following, in order to clarify the positional relationship, the X-axis direction, Y-axis direction, and Z-axis direction that are perpendicular to each other are defined, and the positive Z-axis direction is the vertically upward direction.

[0015] The peeling system 1 shown in FIG. 1 peels the first substrate W1 from the polymer substrate T in which the first substrate W1 and the second substrate W2 shown in FIG. 2 are joined via the adhesive layer J. The first substrate W1 and the second substrate W2 are examples of substrates, and the adhesive layer J is an example of an energy absorption layer. Also, the second substrate W2 is an example of one substrate, and the first substrate W1 is an example of the other substrate.

[0016] Hereinafter, the first substrate W1 will be referred to as the "upper wafer W1", and the second substrate W2 will be referred to as the "lower wafer W2". That is, the upper wafer W1 is an example of the first substrate, and the lower wafer W2 is an example of the second substrate.

[0017] Also, hereinafter, as shown in FIG. 2, among the plate surfaces of the upper wafer W1, the plate surface on the side joined to the lower wafer W2 will be referred to as the "joining surface W1j", and the plate surface on the side opposite to the joining surface W1j will be referred to as the "non-joining surface W1n". Also, among the plate surfaces of the lower wafer W2, the plate surface on the side joined to the upper wafer W1 will be referred to as the "joining surface W2j", and the plate surface on the side opposite to the joining surface W2j will be referred to as the "non-joining surface W2n".

[0018] The first substrate W1 is a substrate on which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. Also, the second substrate W2 is, for example, a bare wafer on which no electronic circuit is formed. The first substrate W1 and the second substrate W2 have substantially the same diameter. Note that an electronic circuit may be formed on the second substrate W2.

[0019] The adhesive layer J is disposed between the joining surface W1j of the first substrate W1 and the joining surface W2j of the second substrate W2. The adhesive layer J has, for example, the property of foaming by heat and reducing the adhesiveness (adhesive force).

[0020] As shown in FIG. 1, the peeling system 1 includes two processing blocks, a first processing block 10 and a second processing block 20. The first processing block 10 and the second processing block 20 are arranged adjacent to each other.

[0021] In the first processing block 10, operations such as loading of the polymerized substrate T, peeling treatment of the polymerized substrate T, cleaning of the lower wafer W2 after peeling, and unloading are performed. Such first processing block 10 includes a loading / unloading station 11, a first transfer area 12, a standby station 13, a peeling station 14, and a first cleaning station 15.

[0022] The loading / unloading station 11, the standby station 13, the peeling station 14, and the first cleaning station 15 are arranged adjacent to the first transfer area 12. Specifically, the loading / unloading station 11 and the standby station 13 are arranged side by side on the negative Y-axis side of the first transfer area 12, and the peeling station 14 and the first cleaning station 15 are arranged side by side on the positive Y-axis side of the first transfer area 12.

[0023] The loading / unloading station 11 is provided with a plurality of cassette mounting tables, and on each cassette mounting table, a cassette Ct for accommodating the polymerized substrate T and a cassette C2 for accommodating the lower wafer W2 after peeling are mounted.

[0024] In the first transfer area 12, a first transfer device 121 for transferring the polymerized substrate T or the lower wafer W2 after peeling is arranged. The first transfer device 121 includes a transfer arm portion capable of moving in the horizontal direction, lifting in the vertical direction, and turning around the vertical direction, and a substrate holding portion attached to the tip of this transfer arm portion.

[0025] In the first transfer area 12, operations such as transferring the polymerized substrate T to the standby station 13 and the peeling station 14 by the first transfer device 121, and transferring the lower wafer W2 after peeling to the first cleaning station 15 and the loading / unloading station 11 are performed.

[0026] In the standby station 13, a standby process for temporarily waiting for the polymerization substrate T waiting for processing is performed as necessary. Such a standby station 13 is provided with a mounting table on which the polymerization substrate T conveyed by the first transfer device 121 is mounted.

[0027] In the peeling station 14, a peeling device 5 (see FIG. 3) is arranged, and a peeling process for peeling the upper wafer W1 from the polymerization substrate T is performed by such a peeling device 5. The peeling device 5 is an example of a substrate processing device. The specific configuration and operation of the peeling device 5 will be described later.

[0028] In the first cleaning station 15, a cleaning process for the lower wafer W2 after peeling is performed. In the first cleaning station 15, a first cleaning device for cleaning the lower wafer W2 after peeling is arranged. As the first cleaning device, for example, a cleaning device described in Japanese Patent Application Laid-Open No. 2013-033925 can be used.

[0029] In addition, in the second processing block 20, cleaning and unloading of the upper wafer W1 after peeling are performed. Such a second processing block 20 includes a delivery station 21, a second cleaning station 22, a second transfer area 23, and an unloading station 24. The second cleaning station 22 is an example of a cleaning device.

[0030] The delivery station 21, the second cleaning station 22, and the unloading station 24 are arranged adjacent to the second transfer area 23. Specifically, the delivery station 21 and the second cleaning station 22 are arranged side by side on the positive Y-axis side of the second transfer area 23, and the unloading station 24 is arranged side by side on the negative Y-axis side of the second transfer area 23.

[0031] The delivery station 21 is arranged adjacent to the peeling station 14 of the first processing block 10. In such a delivery station 21, a delivery process for receiving the upper wafer W1 after peeling from the peeling station 14 and delivering it to the second cleaning station 22 is performed.

[0032] A second transfer device 211 is arranged at the delivery station 21. The second transfer device 211 has a non-contact holding part such as a Bernoulli chuck, and the upper wafer W1 after peeling is non-contact transferred by such a second transfer device 211.

[0033] In the second cleaning station 22, a second cleaning process for cleaning the upper wafer W1 after peeling is performed. A second cleaning device for cleaning the upper wafer W1 after peeling is arranged in such a second cleaning station 22. As the second cleaning device, for example, the cleaning device described in Japanese Patent Application Laid-Open No. 2013-033925 can be used.

[0034] In the second transfer area 23, a third transfer device 231 for transferring the upper wafer W1 after peeling is arranged. The third transfer device 231 includes a transfer arm part capable of moving in the horizontal direction, lifting in the vertical direction, and turning around the vertical direction, and a substrate holding part attached to the tip of this transfer arm part. In the second transfer area 23, a process of transferring the upper wafer W1 after peeling to the carry-out station 24 is performed by such a third transfer device 231.

[0035] The carry-out station 24 is provided with a plurality of cassette mounting tables, and a cassette C1 in which the upper wafer W1 after peeling is accommodated is placed on each cassette mounting table.

[0036] Further, the peeling system 1 includes a control device 30. The control device 30 controls the operation of the peeling system 1. Such a control device 30 is, for example, a computer, and includes a control unit 31 and a storage unit 32. Programs for controlling various processes such as bonding processes are stored in the storage unit 32. The control unit 31 controls the operation of the peeling system 1 by reading and executing the programs stored in the storage unit 32.

[0037] Incidentally, such a program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 32 of the control device 30. Examples of computer-readable recording media include hard disks (HD), flexible disks (FD), compact disks (CD), magneto-optical disks (MO), memory cards, and the like.

[0038] In the peeling system 1 configured as described above, first, the first transfer device 121 of the first processing block 10 takes out the polymerized substrate T from the cassette Ct placed on the loading / unloading station 11 and transfers the taken-out polymerized substrate T to the standby station 13.

[0039] For example, when a polymerized substrate T waiting for processing occurs due to a processing time difference between devices or the like, the polymerized substrate T can be temporarily waited for using the temporary waiting unit provided in the standby station 13, and the loss time between a series of processes can be shortened.

[0040] Subsequently, the polymerized substrate T is taken out from the standby station 13 by the first transfer device 121 and transferred to the peeling station 14. Then, the peeling device 5 disposed at the peeling station 14 performs a peeling process on the polymerized substrate T. By such a peeling process, the polymerized substrate T is separated into the upper wafer W1 and the lower wafer W2.

[0041] The peeled lower wafer W2 is taken out from the peeling station 14 by the first transfer device 121 and transferred to the first cleaning station 15. In the first cleaning station 15, the first cleaning device performs a first cleaning process on the peeled lower wafer W2. By such a first cleaning process, the bonding surface W2j of the lower wafer W2 is cleaned.

[0042] After the first cleaning process, the lower wafer W2 is taken out from the first cleaning station 15 by the first transfer device 121 and accommodated in the cassette C2 placed on the loading / unloading station 11. Then, the cassette C2 is taken out from the loading / unloading station 11 and recovered. Thus, the process for the lower wafer W2 is completed.

[0043] On the other hand, in the second processing block 20, while the processing in the first processing block 10 described above is being performed in parallel, processing for the upper wafer W1 after peeling is carried out.

[0044] In the second processing block 20, first, the second transfer device 211 arranged at the delivery station 21 takes out the upper wafer W1 after peeling from the peeling station 14 and transfers it into the second cleaning station 22.

[0045] Here, the upper wafer W1 after peeling is in a state where the upper surface side, that is, the non - bonding surface W1n side, is held by the peeling device 5, and the second transfer device 211 holds the bonding surface W1j side of the upper wafer W1 from below without contact. Then, the second transfer device 211 flips the held upper wafer W1 and places it on the second cleaning device of the second cleaning station 22.

[0046] As a result, the upper wafer W1 is placed on the second cleaning device with the bonding surface W1j facing upward. Then, the second cleaning device performs a second cleaning process for cleaning the bonding surface W1j of the upper wafer W1. By such a second cleaning process, the bonding surface W1j of the upper wafer W1 is cleaned.

[0047] After the second cleaning process, the upper wafer W1 is taken out from the second cleaning station 22 by the third transfer device 231 arranged in the second transfer area 23 and accommodated in the cassette C1 placed on the unloading station 24. Then, the cassette C1 is taken out from the unloading station 24 and recovered. Thus, the process for the upper wafer W1 is also completed.

[0048] As described above, the peeling system 1 according to the embodiment is configured to include a front end for the polymerized substrate T and the lower wafer W2 after peeling, and a front end for the upper wafer W1 after peeling.

[0049] Here, the front end for the polymerized substrate T and the lower wafer W2 after peeling refers to the loading / unloading station 11 and the first transfer device 121, and the front end for the upper wafer W1 after peeling refers to the unloading station 24 and the third transfer device 231.

[0050] Thereby, since it is possible to perform in parallel the process of transporting the upper wafer W1 to the loading / unloading station 11 and the process of transporting the lower wafer W2 to the unloading station 24, a series of substrate processes can be efficiently performed.

[0051] In addition, in the peeling system 1 according to the embodiment, the peeling station 14 and the second cleaning station 22 are connected via the delivery station 21. Thereby, since it is possible to directly load the upper wafer W1 after peeling from the peeling station 14 to the second cleaning station 22 without passing through the first transfer area 12 or the second transfer area 23, the transport of the upper wafer W1 after peeling can be performed smoothly.

[0052] <Configuration of the peeling device> Next, the configuration of the peeling device 5 installed in the peeling station 14 will be described with reference to FIG. 3. FIG. 3 is a schematic diagram showing the configuration of the peeling device 5 according to the embodiment.

[0053] As shown in FIG. 3, the peeling device 5 includes a processing chamber 100. An inlet / outlet (not shown) is provided on the side surface of the processing chamber 100. The inlet / outlet is provided, for example, on the side of the first transfer area 12 (see FIG. 1) and the side of the delivery station 21 (see FIG. 1), respectively.

[0054] The peeling device 5 includes a processing unit 40 and a measurement unit 60, which are arranged inside the processing chamber 100. In addition, the processing unit 40 according to the embodiment has a heating chamber 41.

[0055] The heating chamber 41 has a holding part 42 and a lid part 43, and the space formed between the holding part 42 and the lid part 43 can be made into a sealed structure. The holding part 42 holds the lower wafer W2 side of the polymerized substrate T. The holding part 42 is formed in a disk shape by a metal member such as aluminum, for example, and is supported by a support member 44 provided below.

[0056] An adsorption surface 45 is provided on the upper surface of the holding part 42. The adsorption surface 45 is a porous body and is formed of a resin member such as PCTFE (polychlorotrifluoroethylene), for example.

[0057] Inside the holding part 42, a suction space (not shown) communicating with the outside through the adsorption surface 45 is formed. Such a suction space is connected to an intake device 45b such as a vacuum pump through an intake pipe 45a. The holding part 42 utilizes the negative pressure generated by the intake of the intake device 45b to adsorb and hold the polymerized substrate T by adsorbing the non-bonding surface W2n (see FIG. 2) of the lower wafer W2 to the adsorption surface 45.

[0058] The lid part 43 has, for example, a substantially cylindrical shape that opens downward. The lid part 43 is supported by a drive mechanism 46 attached to the ceiling part of the processing chamber 100 via a support member 47. The drive mechanism 46 raises and lowers the lid part 43 by moving the support member 47 in the vertical direction.

[0059] Then, the control unit 31 (see FIG. 1) can make the heating chamber 41 into a sealed structure by lowering the lid part 43 by the drive mechanism 46 and bringing the opening of the lid part 43 into contact with the peripheral edge of the holding part 42.

[0060] Further, the control unit 31 can accommodate the polymerized substrate T inside the heating chamber 41 and take out the upper wafer W1 and the lower wafer W2 that have been peeled off from inside the heating chamber 41 by raising the lid part 43 and separating the lid part 43 from the holding part 42.

[0061] Further, the heating chamber 41 is provided with a heater 48. The heater 48 is provided, for example, inside the holding portion 42. The control unit 31 can raise the temperature inside the heating chamber 41 to a desired temperature by operating the heater 48.

[0062] In the example of FIG. 3, the example in which the heater 48 is provided in the holding portion 42 is shown. However, the present disclosure is not limited to such an example. For example, the heater 48 may be provided in the lid portion 43, or may be provided in both the holding portion 42 and the lid portion 43. Further, in the present disclosure, a separate heating source may be provided outside the heating chamber 41, and the inside of the heating chamber 41 may be heated by the thermal energy supplied from such a heating source.

[0063] The measurement unit 60 of the peeling device 5 measures the displacement of the upper wafer W1 in the processing unit 40. The measurement unit 60 according to the embodiment includes a laser displacement meter 61 and a distance measurement unit 62. The laser displacement meter 61 is disposed, for example, above the lid portion 43 inside the processing chamber 100. That is, the laser displacement meter 61 is disposed outside the heating chamber 41.

[0064] The laser displacement meter 61 irradiates the upper wafer W1 side of the polymer substrate T held by the holding portion 42 with laser light L1 through the transparent window member 43a provided in the lid portion 43, and receives the light reflected by the upper wafer W1 from such laser light L1.

[0065] The distance measurement unit 62 is connected to the laser displacement meter 61, and measures the distance D from the laser displacement meter 61 to the upper wafer W1 based on the laser light L1 irradiated from the laser displacement meter 61 and the reflected light from the upper wafer W1 received by the laser displacement meter 61.

[0066] <Operation of the peeling device> Next, the specific operation of the peeling device 5 according to the embodiment will be described with reference to FIGS. 4 and 5. FIG. 4 is a flowchart showing the processing procedure of the peeling process executed by the peeling device 5 according to the embodiment.

[0067] First, the control unit 31 carries the polymerization substrate T into the heating chamber 41 of the processing chamber 100 (step S101). Then, the control unit 31 operates the intake device 45b to hold the lower wafer W2 of the polymerization substrate T by the holding unit 42 (step S102).

[0068] Next, the control unit 31 lowers the lid 43 to seal the heating chamber 41 (step S103). As a result, since the inside of the heating chamber 41 can be efficiently heated, the peeling process of the polymerization substrate T can be efficiently performed.

[0069] In the present disclosure, the process of step S103 may be performed before the process of step S102 or may be performed in parallel with the process of step S102.

[0070] Next, the control unit 31 operates the heater 48 to heat the inside of the heating chamber 41 to a predetermined temperature, thereby applying thermal energy to the adhesive layer J of the polymerization substrate T (step S104). For example, the control unit 31 heats the inside of the heating chamber 41 to about 450 (°C).

[0071] Then, the state of the adhesive layer J changes (for example, foams) due to the thermal energy, so that the adhesive force decreases and the upper wafer W1 starts to peel from the polymerization substrate T.

[0072] Also, in parallel with the process of step S104, the control unit 31 operates the measurement unit 60 to measure the displacement of the upper wafer W1 (step S105). For example, in the embodiment, the control unit 31 measures the distance D from the laser displacement meter 61 to the upper wafer W1 as the displacement of the upper wafer W1.

[0073] Then, as shown in FIG. 5, the control unit 31 detects in real time the change over time of the displacement (distance D) of such upper wafer W1. FIG. 5 is a diagram showing an example of the transition of the distance D from the laser displacement meter 61 to the upper wafer W1.

[0074] Next, the control unit 31 determines whether or not the displacement (distance D) of the upper wafer W1 has changed abruptly (step S106). For example, in the embodiment, the control unit 31 always measures the difference between the moving average value of the displacement (distance D) of the first wafer W1 at each point in time during the peeling process and the moving average value of the displacement (distance D) of the immediately preceding first wafer W1.

[0075] And when the difference between the moving average value of the displacement (distance D) of the first wafer W1 at a certain point in time and the moving average value of the displacement (distance D) of the immediately preceding first wafer W1 becomes larger than a given value, the control unit 31 determines that the second wafer W2 has been peeled off from the polymer substrate T at that time. Such a given value is, for example, about several tens (μm).

[0076] That is, when the displacement (distance D) of the upper wafer W1 changes abruptly (step S106, Yes), the control unit 31 determines that the second wafer W2 has been peeled off from the polymer substrate T and ends the peeling process (step S107).

[0077] Then, the control unit 31 unloads the upper wafer W1 and the lower wafer W2 from the processing chamber 100 (step S108) and completes the processing. On the other hand, when the displacement (distance D) of the upper wafer W1 has not changed abruptly (step S106, No), the process returns to the processes of steps S104 and S105.

[0078] For example, in the example of FIG. 5, the adhesive layer J foams and swells, and the thickness of the polymer substrate T increases abruptly, so that the peeling of the first wafer W1 is completed. Therefore, when the peeling is completed, the distance D from the laser displacement meter 61 to the upper wafer W1 decreases abruptly.

[0079] As described above, in the embodiment, in the polymer substrate T that is performing the peeling process while holding the second wafer W2, it is determined whether or not the peeling process has been completed based on the displacement (distance D) of the first wafer W1 that is not held.

[0080] As a result, since it is possible to accurately detect that the peeling of the upper wafer W1 has been completed, the peeling process (here, the heat treatment in the heating chamber 41) can be terminated at the time of such detection.

[0081] Therefore, according to the embodiment, since it is possible to suppress using extra time for the peeling process, the peeling process can be made more efficient.

[0082] Also, in the embodiment, when the displacement (distance D) of the upper wafer W1 changes rapidly, it is preferable to determine that the upper wafer W1 has been peeled off. As a result, since it is possible to quickly detect that the peeling of the upper wafer W1 has been completed, the peeling process can be made even more efficient.

[0083] In the above embodiment, an example has been shown in which it is determined whether or not the displacement of the first wafer W1 has changed rapidly based on the difference between the moving average value of the displacement of the first wafer W1 at each point during the peeling process and the moving average value of the displacement of the first wafer W1 immediately before. However, the present disclosure is not limited to such an example, and various known methods may be used to determine whether or not the displacement of the upper wafer W1 has changed rapidly.

[0084] Also, in the above embodiment, an example has been shown in which the distance D from the laser displacement meter 61 to the upper wafer W1 is used as the displacement of the upper wafer W1. However, the present disclosure is not limited to such an example, and for example, the relative position of the upper wafer W1 with respect to another reference point may be used as the displacement of the upper wafer W1.

[0085] Also, in the embodiment, the measuring unit 60 may measure the displacement of the upper wafer W1 in a non-contact manner with respect to the upper wafer W1. Thereby, it is possible to suppress the upper wafer W1 from being damaged.

[0086] In the above embodiment, an example has been shown in which the measuring unit 60 measures the displacement of the upper wafer W1 by the laser displacement meter 61. However, the present disclosure is not limited to such an example.

[0087] For example, the measurement unit 60 may measure the displacement of the upper wafer W1 using an ultrasonic displacement meter, or may measure the displacement of the upper wafer W1 using a camera. Further, when measuring the displacement of the upper wafer W1 using a camera, such a camera may be disposed laterally of the polymerization substrate T.

[0088] In addition, in the embodiment, the measurement unit 60 may measure the displacement of the upper wafer W1 through the window member 43a of the lid portion 43. Thereby, since the displacement of the upper wafer W1 can be measured while keeping the periphery of the polymerization substrate T in a sealed state, the peeling treatment time of the polymerization substrate T can be further shortened.

[0089] Therefore, according to the embodiment, the peeling process can be further streamlined.

[0090] <Modification Example 1> Subsequently, various modifications of the embodiment will be described with reference to FIGS. 6 to 11. FIG. 6 is a schematic cross-sectional view of the polymerization substrate T according to Modification Example 1 of the embodiment. As shown in FIG. 6, the polymerization substrate T of Modification Example 1 is different from the above-described embodiment in that an ablation layer A is disposed between the adhesive layer J and the first wafer W1.

[0091] Such an ablation layer A is another example of an energy absorption layer, and has a property of absorbing the laser light L2 (see FIG. 7) irradiated from the laser irradiation unit 51 (see FIG. 7) described later and melting / evaporating. The ablation layer A is composed of, for example, an LTHC (Light to Heat Conversion) film, an Al (aluminum) film, or the like.

[0092] FIG. 7 is a schematic diagram showing the configuration of the peeling device 5 according to Modification Example 1 of the embodiment. As shown in FIG. 7, the peeling device 5 of Modification Example 1 includes a processing unit 40 and a measurement unit 60, similarly to the above-described embodiment.

[0093] Further, the processing unit 40 according to Modification 1 includes a holding unit 42 rotatable by a drive mechanism 49 and a laser irradiation unit 51. The holding unit 42 utilizes the negative pressure generated by the intake of the intake device 45b to adsorb and hold the polymerized substrate T by adsorbing the non-bonding surface W2n (see FIG. 6) of the lower wafer W2 to the adsorption surface 45.

[0094] The laser irradiation unit 51 is configured to be movable horizontally above the holding unit 42 and irradiates laser light L2 downward. Such laser light L2 has, for example, a top-hat distribution with a more uniform energy distribution than a Gaussian distribution.

[0095] Then, the control unit 31 controls the laser irradiation unit 51 to irradiate the ablation layer A (see FIG. 6) of the polymerized substrate T held by the holding unit 42 while sweeping the laser light L2, thereby removing all the ablation layers A and peeling the first wafer W1 from the polymerized substrate T.

[0096] That is, in this Modification 1, the first wafer W1 is peeled from the polymerized substrate T by applying light energy to the ablation layer A.

[0097] Also, the laser displacement meter 61 of Modification 1 is disposed in the same environment as the laser irradiation unit 51, irradiates laser light L1 onto the upper wafer W1 side of the polymerized substrate T held by the holding unit 42, and receives the light reflected by the laser light L1 on the upper wafer W1. Thereby, the measurement unit 60 measures the distance D from the laser displacement meter 61 to the upper wafer W1.

[0098] FIG. 8 is a flowchart showing the processing procedure of the peeling process executed by the peeling device 5 according to Modification 1 of the embodiment. First, the control unit 31 loads the polymerized substrate T into the processing chamber 100 (step S201). Then, the control unit 31 operates the intake device 45b to hold the lower wafer W2 of the polymerized substrate T by the holding unit 42 (step S202).

[0099] Next, the control unit 31 operates the laser irradiation unit 51 to apply light energy to the ablation layer A of the polymerization substrate T (step S203). In parallel with the processing of this step S203, the control unit 31 operates the measurement unit 60 to measure the displacement of the upper wafer W1 (step S204). For example, in Modification 1, the control unit 31 measures the distance D from the laser displacement meter 61 to the upper wafer W1 as the displacement of the upper wafer W1.

[0100] Next, the control unit 31 determines whether or not the displacement (distance D) of the upper wafer W1 has changed abruptly (step S205). When the displacement (distance D) of the upper wafer W1 has changed abruptly (step S205, Yes), the control unit 31 determines that the second wafer W2 has been peeled off from the polymerization substrate T, and ends the peeling process (step S206).

[0101] Then, the control unit 31 unloads the upper wafer W1 and the lower wafer W2 from the processing chamber 100 (step S207), and completes the processing. On the other hand, when the displacement (distance D) of the upper wafer W1 has not changed abruptly (step S205, No), the process returns to the processes of steps S203 and S204.

[0102] In this Modification 1, for example, since the ablation layer A is scraped off and the thickness of the polymerization substrate T decreases abruptly, the peeling of the first wafer W1 is completed. When the peeling is completed, the distance D from the laser displacement meter 61 to the upper wafer W1 increases abruptly.

[0103] Thus, also in Modification 1, similar to the above-described embodiment, in the polymerization substrate T that performs the peeling process while holding the second wafer W2, it is determined whether or not the peeling process is completed based on the displacement (distance D) of the unheld first wafer W1.

[0104] Thereby, since it is possible to accurately detect that the peeling of the upper wafer W1 has been completed, the peeling process (here, the laser irradiation process of the laser irradiation unit 51) can be terminated at the time of such detection.

[0105] Therefore, according to Modification 1, since it is possible to suppress using extra time for the peeling process, the peeling process can be made more efficient.

[0106] Note that in Modification 1 described so far, an example has been shown in which the first wafer W1 is peeled by irradiating the ablation layer A provided between the first wafer W1 and the second wafer W2 with the laser beam L2. However, the present disclosure is not limited to such an example.

[0107] For example, in a polymer substrate T in which silicon oxide films are formed on the bonding surface W1j of the first wafer W1 and the bonding surface W2j of the second wafer W2, respectively, and the silicon oxide films are directly bonded to each other, the silicon oxide film, which is an energy absorption layer, may be irradiated with the laser beam L2 to perform a peeling process.

[0108] Even in this case, when the peeling process is completed, since the thickness of the polymer substrate T changes rapidly, by measuring the displacement of the first wafer W1 with the measuring unit 60, it is possible to accurately detect that the peeling of the upper wafer W1 has been completed.

[0109] Further, in the present disclosure, the upper wafer W1 may be peeled from the polymer substrate T by irradiating the adhesive layer J of the polymer substrate T shown in FIG. 2 with the laser beam L and changing the state of the adhesive layer J (for example, foaming).

[0110] Even in this case, when the peeling process is completed, since the thickness of the polymer substrate T changes rapidly, by measuring the displacement of the first wafer W1 with the measuring unit 60, it is possible to accurately detect that the peeling of the upper wafer W1 has been completed.

[0111] <Modification 2> FIG. 9 is a diagram for explaining a peeling process according to Modification 2 of the embodiment. As shown in FIG. 9(a), in Modification 2, an adhesive layer J and an energy absorption layer E are disposed between the first wafer W1 and the second wafer W2 that constitute the polymer substrate T.

[0112] In Modification 2, for example, an adhesive layer J is positioned so as to contact the bonding surface W2J of the second wafer W2, and an energy absorption layer E is positioned so as to contact the bonding surface W1J of the first wafer W1. Such an energy absorption layer E is a layer that absorbs at least one of thermal energy and light energy, and for example, absorbs laser light L2 (see FIG. 7) and generates heat.

[0113] Then, in Modification 2, the control unit 31 (see FIG. 1) irradiates the energy absorption layer E of the polymerization substrate T with the laser light L2. As a result, the temperature of the energy absorption layer E rises, and the state of the adhesive layer J changes (for example, foams), so that the upper wafer W1 peels off from the polymerization substrate T as shown in FIG. 9(b).

[0114] At this time, in Modification 2, while the energy absorption layer E remains on the bonding surface W1J of the first wafer W1, most of the adhesive layer J disappears from the bonding surface W2J of the second wafer W2. That is, in Modification 2, a layer that absorbs at least one of thermal energy and light energy (in this case, the energy absorption layer E) and a layer that disappears by the peeling process are separated.

[0115] Even in this case, when the peeling process is completed, since the thickness of the polymerization substrate T changes rapidly, by measuring the displacement of the first wafer W1 with the measuring unit 60 (see FIG. 7), it is possible to accurately detect that the peeling of the upper wafer W1 is completed.

[0116] Note that in this Modification 2, the case is not limited to changing the adhesive layer J by causing the energy absorption layer E to absorb light energy, and the adhesive layer J may be changed by causing the energy absorption layer E to absorb thermal energy.

[0117] <Modification 3> FIG. 10 is a diagram for explaining the peeling process according to Modification 2 of the embodiment. As shown in FIG. 10(a), in Modification 3, similar to Modification 2 described above, an adhesive layer J and an energy absorption layer E are disposed between the first wafer W1 and the second wafer W2 that constitute the polymerization substrate T.

[0118] Then, in Modification 3, the control unit 31 (see FIG. 1) irradiates the energy absorption layer E of the polymerization substrate T with the laser beam L2. As a result, the temperature of the energy absorption layer E rises, and the adhesive force between the adhesive layer J and the energy absorption layer E decreases. Thus, as shown in FIG. 10(b), the upper wafer W1 is peeled off from the polymerization substrate T.

[0119] At this time, in Modification 3, the energy absorption layer E remains on the bonding surface W1J of the first wafer W1, and the adhesive layer J remains on the bonding surface W2J of the second wafer W2.

[0120] Even in this case, when the peeling process is completed, since the thickness of the polymerization substrate T changes rapidly, by measuring the displacement of the first wafer W1 with the measuring unit 60 (see FIG. 7), it is possible to accurately detect that the peeling of the upper wafer W1 is completed.

[0121] Note that in this Modification 3, the present invention is not limited to the case where the adhesive force between the adhesive layer J and the energy absorption layer E is reduced by causing the energy absorption layer E to absorb light energy. For example, in Modification 3, the adhesive force between the adhesive layer J and the energy absorption layer E may be reduced by causing the energy absorption layer E to absorb thermal energy.

[0122] <Modification 4> FIG. 11 is a diagram for explaining the peeling process according to Modification 4 of the embodiment. As shown in FIG. 11(a), in Modification 4, a first device layer D1 is formed on the bonding surface W1J of the first wafer W via an energy absorption layer E. Also, a second device layer D2 is formed on the bonding surface W2J of the second wafer W2.

[0123] Then, in Modification 4, as shown in FIG. 11(b), the polymerization substrate T is formed by bonding the first device layer D1 and the second device layer D2 together by a known technique.

[0124] In Modification 4, the control unit 31 (see FIG. 1) irradiates the energy absorption layer E of the polymerized substrate T with the laser beam L2. As a result, the temperature of the energy absorption layer E rises, and the adhesive force between the first wafer W1 and the energy absorption layer E decreases. Thus, as shown in FIG. 11(c), the upper wafer W1 is peeled off from the polymerized substrate T.

[0125] At this time, in Modification 4, the second device layer D1, the first device layer D1, and the adhesive layer J remain on the bonding surface W2J of the second wafer W2.

[0126] Even in this case, when the peeling process is completed, the thickness of the polymerized substrate T changes rapidly. Therefore, by measuring the displacement of the first wafer W1 with the measuring unit 60 (see FIG. 7), it is possible to accurately detect that the peeling of the upper wafer W1 is completed.

[0127] Note that in this Modification 4, the present invention is not limited to the case where the adhesive force between the first wafer W1 and the energy absorption layer E is reduced by causing the energy absorption layer E to absorb light energy. For example, in Modification 3, the adhesive force between the first wafer W1 and the energy absorption layer E may be reduced by causing the energy absorption layer E to absorb thermal energy.

[0128] The substrate processing apparatus (peeling apparatus 5) according to the embodiment includes a processing unit 40, a measuring unit 60, and a control unit 31. The processing unit 40 holds one substrate (second wafer W2) of the polymerized substrate T and applies at least one of thermal energy and light energy to the energy absorption layer E (adhesive layer J, ablation layer A) to peel the other substrate (first wafer W1). In such a polymerized substrate T, an energy absorption layer E (adhesive layer J, ablation layer A) is formed between a pair of substrates (first wafer W1, second wafer W2). The measuring unit 60 measures the displacement of the other substrate (first wafer W1) in the processing unit 40. The control unit 31 controls each unit. Further, the control unit 31 determines whether or not the other substrate (first wafer W1) has been peeled based on the displacement of the other substrate (first wafer W1). Thereby, the peeling process can be made more efficient.

[0129] Also, in the substrate processing apparatus (peeling device 5) according to the embodiment, when the displacement of the other substrate (first wafer W1) changes rapidly, the control unit 31 determines that the other substrate (first wafer W1) has been peeled off. Thereby, the peeling process can be further optimized.

[0130] Also, in the substrate processing apparatus (peeling device 5) according to the embodiment, the measurement unit 60 measures the displacement of the other substrate (first wafer W1) in a non-contact manner. Thereby, it is possible to prevent the upper wafer W1 from being damaged.

[0131] Also, in the substrate processing apparatus (peeling device 5) according to the embodiment, the measurement unit 60 includes at least one of a laser displacement meter 61, an ultrasonic displacement meter, and a camera. Thereby, it is possible to prevent the upper wafer W1 from being damaged.

[0132] Also, in the substrate processing apparatus (peeling device 5) according to the embodiment, the processing unit 40 includes a heating chamber 41 with a sealed structure that applies thermal energy to the energy absorption layer E (adhesive layer J, ablation layer A). Also, the measurement unit 60 measures the displacement of the other substrate (first wafer W1) from the outside of the heating chamber 41. Thereby, the peeling process can be further optimized.

[0133] Also, in the substrate processing apparatus (peeling device 5) according to the embodiment, the processing unit 40 includes a laser irradiation unit 51 that applies light energy to the energy absorption layer E (adhesive layer J, ablation layer A). Also, the measurement unit 60 is arranged in the same environment as the laser irradiation unit 51. Thereby, the peeling process can be optimized.

[0134] In addition, the substrate processing method according to the embodiment includes a step of applying (steps S104 and S203), a step of measuring (steps S105 and S204), and a step of determining (steps S106 and S205). The applying step applies at least one of thermal energy and light energy to the energy absorption layer E (adhesive layer J, ablation layer A) while holding one substrate (second wafer W2) of the polymerized substrate T. An energy absorption layer E (adhesive layer J, ablation layer A) is formed between a pair of substrates (first wafer W1, second wafer W2) of the polymerized substrate T. The measuring step (steps S105 and S204) measures the displacement of the other substrate (first wafer W1) in the applying step (steps S104 and S203). The determining step (steps S106 and S205) determines whether or not the other substrate (first wafer W1) has been peeled off based on the displacement of the other substrate (first wafer W1). Thereby, the peeling process can be made more efficient.

[0135] As described above, the embodiments of the present disclosure have been described. However, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit thereof. For example, in the above-described embodiment, an example of peeling the upper wafer W1 from the polymerized substrate T has been shown. However, the present disclosure is not limited to such an example, and for example, the lower wafer W2 may be peeled from the polymerized substrate T.

[0136] It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. Indeed, the above-described embodiments can be embodied in various forms. Also, the above-described embodiments may be omitted, replaced, or changed in various forms without departing from the scope of the appended claims and their spirit.

Explanation of Reference Numerals

[0137] 1 Peeling system 5 Peeling device (an example of a substrate processing device) 31 Control unit 40 Processing unit 41 Heating chamber 42 Holding unit 43 Lid unit 51 Laser irradiation unit 60 Measurement unit 61 Laser displacement meter A Ablation layer (an example of an energy absorption layer) D Distance (an example of displacement) E Energy absorption layer J Adhesive layer (an example of an energy absorption layer) T Polymerization substrate W1 Upper wafer (an example of a substrate and the other substrate) W2 Lower wafer (an example of a substrate and one substrate)

Claims

1. A processing unit that holds one of the substrates in a polymer substrate in which an energy absorption layer is formed between a pair of substrates, and applies at least one of thermal energy and light energy to the energy absorption layer to peel off the other substrate; A measurement unit that measures the displacement of the other substrate located within the processing unit; A control unit that controls each part; Comprising: The control unit: Determines whether or not the other substrate has been peeled off based on the displacement of the other substrate A substrate processing apparatus.

2. The control unit: Determines that the other substrate has been peeled off when the displacement of the other substrate changes abruptly The substrate processing apparatus according to Claim 1.

3. The measurement unit: Measures the displacement of the other substrate in a non-contact manner The substrate processing apparatus according to Claim 1 or 2.

4. The measurement unit: Has at least one of a laser displacement meter, an ultrasonic displacement meter, and a camera The substrate processing apparatus according to Claim 1 or 2.

5. The processing unit has a heating chamber with a sealed structure that applies thermal energy to the energy absorption layer, The measurement unit measures the displacement of the other substrate from the outside of the heating chamber The substrate processing apparatus according to Claim 1 or 2.

6. The processing unit has a laser irradiation unit that applies light energy to the energy absorption layer, The measurement unit is arranged in the same environment as the laser irradiation unit The substrate processing apparatus according to Claim 1 or 2.

7. A step of holding one of the substrates in a polymer substrate in which an energy absorption layer is formed between a pair of substrates, and applying at least one of thermal energy and light energy to the energy absorption layer; In the applying step, a step of measuring the displacement of the other substrate; A step of determining whether or not the other substrate has been peeled off based on the displacement of the other substrate; A substrate processing method including:

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