Film capacitor element, film capacitor element intermediate, film capacitor, and metallized film

Abstract

To provide a film capacitor element in which element processing by flattening is suitable, and variations of an electrostatic capacitance is small, and excellent voltage resistance is also provided.SOLUTION: In a film capacitor element having a metalization film winding body to be flattened, a ratio (α1 / Σ1) of a deviation amount α1(mm) against a short diameter Σ1(mm) before weight of the film capacitor element is applied is 2.5% or more when the weight of 200 N is applied to a short diameter direction of the film capacitor element, and a ratio (β1 / Σ1) of a deviation amount β1(mm) against the short diameter Σ1(mm) of the film capacitor element is 4.0% or more when the weight of 400 N to the short direction of the film capacitor element is applied.SELECTED DRAWING: None

Description

Technical Field

[0001] The present invention relates to a film capacitor element, an intermediate body of a film capacitor element, a film capacitor, and a metallized film.

Background Art

[0002] Conventionally, in electronic devices, electrical devices, etc., for example, as filter capacitors and smoothing capacitors such as high-voltage capacitors, various switching power supplies, converters, and inverters, film capacitor elements using metallized films have been used.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] A film capacitor using a metallized film is generally manufactured by the following steps.

[0005] A metallized film composed of a dielectric film and a metal layer (metal vapor deposition electrode) is wound to obtain a cylindrical metallized film wound body. Next, the wound body is pressed in the diameter direction to be flattened (into a flattened columnar body in the shape of a oval coin). Next, the flattened metallized film wound body is subjected to a heat curing treatment to obtain a film capacitor element. At this time, metal electrodes can also be formed by spraying metal fine particles on both axial ends of the metallized film wound body and then subjected to a heat curing treatment. Leads are attached to the metal electrodes of the film capacitor element, and the element is sealed and cured with an outer case and an epoxy resin to become a capacitor.

[0006] In the manufacturing process of a film capacitor using a metallized film, when flattening by pressing a metallized film wound body, buckling, wrinkles, elongation, etc. are likely to be formed in the metallized film, and the gaps between the metallized films also tend to become non-uniform, making it easy for element processing to become inappropriate. Also, due to this, there are problems such as variations in the capacitance of the film capacitor element and a tendency for the breakdown voltage resistance to decrease due to damage to the metallized film.

[0007] Under such circumstances, the main object of the present invention is to optimize the element processability by flattening, and to provide a film capacitor element with small variations in capacitance and excellent breakdown voltage resistance. Another object of the present invention is to provide an intermediate body of a film capacitor element that can preferably manufacture the film capacitor element by subjecting it to a heat curing treatment. Furthermore, an object of the present invention is also to provide a metallized film used for manufacturing the film capacitor using the capacitor element of the present invention and the film capacitor element.

Means for Solving the Problems

[0008] The inventors of the present invention conducted intensive studies to solve the above problems. As a result, a film capacitor element including a flattened metallized film wound body, when a load of 200 N is applied in the minor axis direction of the film capacitor element, the ratio (α1 / Σ1) of the displacement amount α1 (mm) to the minor axis Σ1 (mm) of the film capacitor element before applying the load is a predetermined ratio (%) or more, and when a load of 400 N is applied in the minor axis direction of the film capacitor element, the ratio (β1 / Σ1) of the displacement amount β1 (mm) to the minor axis Σ1 (mm) of the film capacitor element is a predetermined ratio (%) or more. It has been found that the film capacitor element (film capacitor) has appropriate element processing by flattening, small variations in capacitance, and excellent breakdown voltage resistance.

[0009] In addition, such a film capacitor element is an intermediate body of a film capacitor element before being subjected to a thermosetting treatment, which includes a flattened metallized film wound body. When a load of 200 N is applied in the minor axis direction of the film capacitor element intermediate body, the ratio (α2 / Σ2) of the displacement amount α2 (mm) to the minor axis Σ2 (mm) before applying the load of the film capacitor element intermediate body is equal to or greater than a predetermined ratio (%). When a load of 400 N is applied in the minor axis direction of the film capacitor element intermediate body, the ratio (β2 / Σ2) of the displacement amount β2 (mm) to the minor axis Σ2 (mm) of the film capacitor element intermediate body is equal to or greater than a predetermined ratio (%). It has been found that a film capacitor element intermediate body can be preferably obtained by subjecting it to a thermosetting treatment.

[0010] The present invention has been completed by further studies based on these findings.

[0011] That is, the present invention includes the following. Item 1. A film capacitor element including a flattened metallized film wound body, wherein when a load of 200 N is applied in the minor axis direction of the film capacitor element, the ratio (α1 / Σ1) of the displacement amount α1 (mm) to the minor axis Σ1 (mm) before applying the load of the capacitor element is 2.5% or more, when a load of 400 N is applied in the minor axis direction of the film capacitor element, the ratio (β1 / Σ1) of the displacement amount β1 (mm) to the minor axis Σ1 (mm) of the film capacitor element is 4.0% or more. Item 2. The film capacitor element according to Item 1, wherein when a load is applied in the major axis direction of the film capacitor element and displaced by 2 to 20 mm, the average load is 50 N or less. Item 3. When unloading from the maximum load of 500 N to 0 N at a speed of 5.0 mm / min in the load release direction immediately after applying a maximum load of 500 N at a compression speed of 5.0 mm / min in the minor axis direction of the film capacitor element, the displacement amount hmax at the maximum load of 500 N and the displacement amount hp at the load of 0 N satisfy hp / hmax = 45% or less. The film capacitor element according to Item 1 or 2. Item 4. The metallized film wound body is the film capacitor element according to any one of Items 1 to 3, which contains oil between the metallized films. Item 5. The metallized film is a metal layer integral type film having a dielectric film and a metal layer laminated on one side of the dielectric film, The haze of the dielectric film is 2.0% or less, and the film capacitor element according to any one of Items 1 to 4. Item 6. The metallized film is a metal layer integral type film having a dielectric film and a metal layer laminated on one side of the dielectric film, The static friction coefficient μs between the surface of the dielectric film of the metallized film and the surface of the metal layer is 2.0 or less, and the kinetic friction coefficient μk is 1.2 or less, The value calculated by the following formula is in the range of 0.25 to 0.45, and the film capacitor element according to any one of Items 1 to 5. (μs - μk) / μs Item 7. A film capacitor element intermediate before being subjected to heat curing treatment, comprising a flattened metallized film wound body, When a load of 200 N is applied in the minor axis direction of the film capacitor element intermediate, the ratio (α2 / Σ2) of the displacement amount α2 (mm) to the minor axis Σ2 (mm) of the film capacitor element intermediate before applying the load is 7.0% or more, When a load of 400 N is applied in the minor axis direction of the film capacitor element intermediate, the ratio (β2 / Σ2) of the displacement amount β2 (mm) to the minor axis Σ2 (mm) of the film capacitor element intermediate is 8.5% or more. The film capacitor element intermediate. Item 8. The average load when a load is applied in the major axis direction of the film capacitor element intermediate and displaced by 2 to 20 mm is 50 N or less, and the film capacitor element intermediate according to Item 7. Item 9. The film capacitor element according to item 7 or 8, wherein when unloading from the maximum load of 500 N to 0 N at a speed of 5.0 mm / min in the direction of load release immediately after applying a maximum load of 500 N at a compression speed of 5.0 mm / min in the minor axis direction of the film capacitor element intermediate body, the displacement amount hmax at the maximum load of 500 N and the displacement amount hp at the load of 0 N satisfy hp / hmax = 40% or less. Item 10. A film capacitor comprising the film capacitor element according to any one of items 1 to 6, a metallized electrode, and a lead wire. Item 11. A metallized film for use in the film capacitor element according to any one of items 1 to 6, wherein the metallized film is a metal layer integrated film having a dielectric film and a metal layer laminated on one side of the dielectric film, the static friction coefficient μs between the surface of the dielectric film and the surface of the metal layer of the metallized film is 2.0 or less, and the kinetic friction coefficient μk is 1.2 or less, and a value calculated by the following formula is in the range of 0.25 to 0.45: (μs - μk) / μs

Advantages of the Invention

[0012] According to the present invention, it is possible to provide a film capacitor element in which element processing by flattening is appropriate, the variation in capacitance is small, and the withstand voltage property is excellent. Further, according to the present invention, it is also possible to provide an intermediate body of a film capacitor element that can suitably manufacture the film capacitor element of the present invention by subjecting it to a heat curing treatment. Furthermore, according to the present invention, it is also possible to provide a film capacitor using the film capacitor element of the present invention and a metallized film used for manufacturing the film capacitor element.

Brief Description of the Drawings

[0013]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Mode for Carrying Out the Invention

[0014] Hereinafter, the film capacitor element, the film capacitor element intermediate, the film capacitor, and the metallized film of the present invention will be described in detail.

[0015] In this specification, the expressions "contain" and "include" include the concepts of "contain", "include", "consist essentially of", and "consist only of".

[0016] Also, in this specification, the expression "film capacitor" includes the concepts of "capacitor", "capacitor element", and "metallized film capacitor".

[0017] In this specification, the terms "wind" and "wind up" are used, but these terms can also be said to be "wind around".

[0018] In this specification, the directions of the film capacitor element 10 are as follows. As shown in FIG. 1, the front view of the film capacitor element 10 is a view of the film capacitor element 10 from the axial direction (z direction, which may be denoted as the axial direction z, etc.) perpendicular to the winding direction of the metallized film 1 (the w direction, which may be denoted as the winding direction w, etc.). In the front view of the film capacitor element 10 in which the metallized film is flattened, the minor axis direction is the y direction (which may be denoted as the thickness direction y, etc.), and the major axis direction is the x direction (which may be denoted as the length direction x, etc.). Also, the direction of the metallized film 1 is as follows. The machine direction of the film is the same direction as the MachineDirection (hereinafter referred to as the "MD direction"). The MD direction may be referred to as the length direction or the flow direction. The transverse direction of the film is the same direction as the TransverseDirection (hereinafter referred to as the "TD direction"). The TD direction may be referred to as the width direction. The TD direction of the metallized film 1 coincides with the axial direction z of the film capacitor element 10, and the film capacitor element 10 is obtained by winding the MD direction of the metallized film 1 in the winding direction w.

[0019] Film capacitor element The film capacitor element according to the present embodiment includes a flattened metallized film wound body. The film capacitor element according to the present embodiment, when a load of 200 N is applied in the minor axis direction of the film capacitor element (see the schematic diagram in FIG. 3), the ratio (α1 / Σ1) of the displacement amount α1 (mm) to the minor axis Σ1 (mm) of the film capacitor element before applying the load is 2.5% or more, and when a load of 400 N is applied in the minor axis direction of the film capacitor element (see the schematic diagram in FIG. 3), the ratio (β1 / Σ1) of the displacement amount β1 (mm) to the minor axis Σ1 (mm) of the film capacitor element is 4.0% or more. The displacement amount α1 (mm) is the displacement amount when a load of 200 N is applied in the minor axis direction of the film capacitor element, and the displacement amount β1 (mm) is the displacement amount when a load of 400 N is applied in the minor axis direction of the film capacitor element. The measurement of the minor axis Σ1, the displacement amount α1, and the displacement amount β1 is in accordance with the description of the examples.

[0020] By having the film capacitor element 10 according to this embodiment configured as described above, appropriate element processing can be achieved through flattening, the variation in capacitance is small, and excellent withstand voltage characteristics can be exhibited. The mechanism can be considered as follows.

[0021] That is, the internal stress of the wound film capacitor element is uniform in the circumferential direction after winding and is stabilized. However, when it is pressed and flattened, a bias occurs in the internal stress in the minor axis direction and the major axis direction. This stress bias is relaxed by the slippage between the superimposed metallized film layers or the gaps between the metallized films. However, if the slippage between the layers is poor, elongation of the metallized film or variations in the gaps between the layers and wrinkles due to buckling are likely to occur. In this embodiment, the hardness of the element after flattening is measured as the displacement amount due to the compressive load, and the displacement amount is defined before and after the deformation of the element, thereby relaxing the bias of the internal stress of the element due to flattening and improving the processability of the element due to flattening. Further, by improving the processability, the interlayer gap of the metallized film when flattened is likely to be kept uniform, suppressing the variation in capacitance, and maintaining a uniform interlayer, it is possible to provide a film capacitor element excellent in element safety and withstand voltage characteristics.

[0022] From the viewpoint of more preferably exhibiting the effects of the present invention, α1 / Σ1 of the film capacitor element 10 is preferably 2.5 to 3.5%, more preferably 2.5 to 3.0%, and even more preferably 2.6 to 2.8%.

[0023] Also, from the viewpoint of more preferably exhibiting the effects of the present invention, β1 / Σ1 of the film capacitor element 10 is preferably 4.0 to 4.8%, more preferably 4.0 to 4.5%, and even more preferably 4.2 to 4.4%.

[0024] Also, from the viewpoint of more preferably exhibiting the effects of the present invention, α1 of the film capacitor element 10 is preferably 0.45 to 0.64 mm, more preferably 0.45 to 0.55 mm, and even more preferably 0.47 to 0.52 mm. From the same viewpoint, β1 of the film capacitor element 10 is preferably 0.74 to 0.88 mm, more preferably 0.74 to 0.83 mm, and even more preferably 0.77 to 0.81 mm.

[0025] Also, from the viewpoint of more preferably exhibiting the effects of the present invention, as shown in the schematic diagram of FIG. 4, when a load is applied in the major axis direction x of the film capacitor element 10 and displaced by 2 to 20 mm, the average load is preferably 50 N or less, more preferably 45 to 40 N, and even more preferably 40 to 35 N. The measurement of the average load is carried out according to the description of the examples.

[0026] Also, from the viewpoint of more preferably exhibiting the effects of the present invention, when, immediately after applying a maximum load of 500 N at a compression speed of 5.0 mm / min in the minor axis direction of the film capacitor element 10, unloading is performed at a speed of 5.0 mm / min in the load release direction until the load reaches 0 N, it is preferable that the displacement amount hmax at the maximum load of 500 N and the displacement amount hp at the load of 0 N satisfy the relationship of hp / hmax = 45% or less, more preferably the relationship of 45% to 40%, and even more preferably the relationship of 43 to 40%.

[0027] In the film capacitor element 10, oil may or may not be included between the metallized films 1. For example, in the film capacitor element 10 of the present embodiment, physical properties such as the above-mentioned α1 / Σ1, β1 / Σ1, average load, hp / hmax, etc. can be adjusted according to the amount of oil between the metallized films 1. Further, the amount of oil can be adjusted by the temperature, time, etc. when depositing the oil on the surface of the metallized film 1. The oil is not particularly limited, and examples thereof include silicone oil, fluorine-based oil, etc. Any oil may be used as long as it does not affect the insulation of the film capacitor and the metal layer of the metallized film from deteriorating. The oil contained between the metallized films may be only one type or two or more types.

[0028] Further, the metallized film 1 used in the film capacitor element 10 is preferably a metal layer integrated film having a dielectric film and a metal layer laminated on one side of the dielectric film. The haze of the dielectric film is preferably 2.0% or less, more preferably 1.5% or less, and still more preferably 1.3% or less. For example, in the film capacitor element 10 of the present embodiment, physical properties such as the above-mentioned α1 / Σ1, β1 / Σ1, average load, hp / hmax, etc. can be adjusted according to the haze of the dielectric film. In a transparent dielectric film, it can be evaluated that the smaller the haze, the higher the smoothness of the dielectric film, and the smaller the haze, the easier it is to adjust the above physical properties. The measurement of the haze of the dielectric film is carried out according to the description of the examples.

[0029] Further, from the viewpoint of more preferably exhibiting the effects of the present invention, the static friction coefficient μs between the surface of the dielectric film and the surface of the metal layer of the metallized film 1 is preferably 2.0 or less, more preferably 1.8 or less, and still more preferably 1.6 or less, and the dynamic friction coefficient μk is preferably 1.2 or less, more preferably 1.0 or less, and still more preferably 0.9 or less. Further, regarding the static friction coefficient μs and the dynamic friction coefficient μk, the value calculated by the following formula is preferably within the range of 0.25 to 0.45, more preferably within the range of 0.25 to 0.40, and still more preferably within the range of 0.30 to 0.40.

[0030] Metallized film Next, the metallized film 1 preferably used for the film capacitor element 10 of the present embodiment will be described.

[0031] The schematic diagram shown in FIG. 1 is a front view of a film capacitor element 10 including a flattened metallized film wound body obtained by winding the metallized film 1 in a roll shape. Further, the schematic diagram shown in FIG. 2 is a perspective view of the film capacitor element 10 including the flattened metallized film wound body. The film capacitor element 10 using the metallized film 1 is used for manufacturing a metallized film capacitor. The metallized film 1 is manufactured as a metallized film roll wound in a roll shape. The metallized film and the metallized film roll having a film width for one film capacitor element are hereinafter appropriately referred to as "element-width metallized film" and "element-width metallized film roll", respectively.

[0032] The element-width metallized film is obtained by feeding out the metallized film 1 from the metallized film roll and cutting it to the film width for one film capacitor element in the slit process described later, and the metallized film roll is formed by winding up the obtained element-width metallized film. The element width is not particularly limited, but for example, 10 to 100 mm is preferable. Also, the winding length of the element-width metallized film is not particularly limited, but for example, 1,000 to 100,000 m is preferable. The width of the full-width metallized film is not particularly limited, but for example, the width obtained by multiplying the above element width by the number of columns is preferable. The winding length of the full-width metallized film 1 is not particularly limited, but for example, it is preferably about the same as the winding length of the element-width metallized film.

[0033] The metallized film 1 usually has electrode portions (which are metal vapor deposition portions) formed in parallel by vapor-depositing a metal in a thin film state on one side of a dielectric film 2 having a film width for a plurality of film capacitor elements. That is, a metal layer constituting the electrode portion is laminated on one side of the dielectric film 2.

[0034] These electrode portions are collectively referred to as "metal vapor deposition electrodes" as appropriate. At the boundary between adjacent element-width metallized film portions, an insulating margin or an electrode extraction portion extending linearly in the film width direction can be provided respectively. The insulating margin is a non-metal vapor deposition portion. In the present invention and this specification, the "metal vapor deposition portion" is a portion where metal is vapor-deposited. Also, the "non-metal vapor deposition portion" is a portion that is not a metal vapor deposition portion, that is, a portion where metal is not vapor-deposited, and is also referred to as a "metal non-vapor deposition portion" or "non-vapor deposited portion". The electrode extraction portion is a portion where a metallicon electrode can be joined in a film capacitor element formed using an element-width metallized film.

[0035] The resin component constituting the dielectric film 2 (the resin component contained in the dielectric film 2) is not particularly limited. For example, there are insulating resins such as polypropylene (PP), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyethylene naphthalate (PEN), polyvinylidene difluoride (PVDF), polycarbonate (PC), polyetherimide (PEI), polystyrene (PS), polysulfone (PSU), polyether sulfone (PES or PESU), polyphenylsulfone (PPSU), polyether ether ketone (PEEK), cycloolefin polymer (COP), and cycloolefin copolymer (COC). As for polystyrene, there are isotactic polystyrene (IPS), syndiotactic polystyrene (SPS), and atactic polystyrene (APS). In particular, when the main component of the dielectric film 2 is polypropylene, it is likely to be molded due to the influence of expansion and contraction by heat, etc. Therefore, the effect of suppressing molding in the case of using it as the metallized film in Embodiment 1 is great. Thus, it is a preferred embodiment that the main component of the dielectric film 2 is polypropylene. Here, the main component of the dielectric film 2 refers to a component contained in an amount of 50% by mass or more of all the components constituting the dielectric film 2.The resin component contained in the dielectric film 2 is preferably contained in an amount of 70% by mass or more, more preferably 80% by mass or more, and even more preferably 90% by mass or more of the dielectric film 2. The resin component contained in the dielectric film 2 may be contained in an amount of 100% by mass or less of the dielectric film 2. The resin component contained in the dielectric film 2 may be of one type, or two or more types may be used in combination.

[0036] The dielectric film 2 may contain an additive in addition to the resin component. Examples of the additive include an antioxidant, a chlorine absorber, an ultraviolet absorber, a lubricant, a plasticizer, a flame retardant, an antistatic agent, a colorant, and the like.

[0037] The thickness of the dielectric film 2 is not particularly limited, but is preferably 0.5 to 25 μm, more preferably 0.7 to 15 μm, even more preferably 0.8 to 10 μm, further preferably 1.0 to 8 μm, and particularly preferably 1.5 to 6 μm. In particular, when the thickness of the dielectric film 2 is 0.8 to 10 μm (more preferably 1.0 to 8 μm, even more preferably 1.5 to 6 μm), steps are less likely to occur on the winding drum surface of the metallized film roll obtained by forming a metal vapor deposition electrode (metal vapor deposition film) on the dielectric film 2 and winding it into a roll, and molding (film elongation at the stepped portion) is less likely to occur. Therefore, the quality of the metallized film roll and the metallized film 1 wound thereon can be improved, and their productivity can be improved. Further, by improving the quality of the metallized film 1, the quality of the element-width metallized film obtained by cutting it and the quality of the film capacitor manufactured using the element-width metallized film can also be improved.

[0038] The material of the metal vapor deposition electrode is not particularly limited, and for example, metal materials such as aluminum (Al), zinc (Zn), tin (Sn), copper (Cu), or alloys thereof can be used. The thickness of the metal vapor deposition electrode (metal vapor deposition film) is not particularly limited, but is preferably 1 to 200 nm. Here, among the metal vapor deposition electrodes, the electrode extraction part preferably has a heavy edge structure in order to strengthen the bonding between the electrode extraction part and the metallicon electrode and improve the electrical connection. The heavy edge structure is a structure in which the thickness of the metal vapor deposition film of the electrode extraction part among the metal vapor deposition electrodes is made thicker than the thickness of the metal vapor deposition film of the part other than the electrode extraction part. For example, the thickness of the metal vapor deposition film of the electrode extraction part is about 2 to 5 times the thickness of the metal vapor deposition film of the part other than the electrode extraction part. Also, the thickness of the metal vapor deposition electrode may be set according to the specific resistance of the material of the metal vapor deposition electrode so as to obtain desired electrical characteristics.

[0039] FIG. 6 is a schematic diagram for explaining the manufacturing method of the metallized film 1. The manufacturing apparatus used for manufacturing the metallized film 1 includes a dielectric film supply unit 101, an insulating margin forming unit 102, a pattern forming unit 103, a vapor deposition unit 104, and a winding roll 105.

[0040] The dielectric film supply unit 101 supports a dielectric film roll 2R around which the dielectric film 2 is wound and supplies the dielectric film 2. The dielectric film 2 supplied from the dielectric film roll 2R is conveyed to the insulating margin forming unit 102.

[0041] The insulating margin forming unit 102 vapor-deposits an oil on the surface 2a of the dielectric film 2 to form an oil mask in a pattern corresponding to the pattern of the insulating margin. The oil mask is for preventing metal particles from adhering in the vapor deposition process to the portion that becomes the insulating margin in the metallized film 1. The insulating margin forming unit 102 vaporizes the oil stored in the oil tank and directly vapor-deposits the oil on one surface 2a of the dielectric film 2 through a nozzle (slit) provided in the tank to form an oil mask.

[0042] The pattern forming unit 103 applies oil in a pattern generally corresponding to the electrode pattern of the metal vapor deposition electrode onto one surface 2a of the dielectric film 2 to form an oil mask. The oil mask is for preventing metal particles from adhering during the vapor deposition process to portions that become the inclined margin and the vertical margin in the metallized film 1. The pattern forming unit 103 includes an oil tank 103a, an anilox roll 103b, a transfer roll 103c, a plate roll 103d, and a backup roll 103e. The oil tank 103a vaporizes the stored oil and ejects it from a nozzle. The anilox roll 103b and the transfer roll 103c rotate with the oil ejected from the nozzle of the oil tank 103a adhering to their outer peripheral surfaces.

[0043] On the outer peripheral surface of the plate roll 103d, a relief portion having a pattern shape corresponding to the electrode pattern of the metal vapor deposition electrode is provided, and the plate roll 103d rotates in synchronization with the conveyance of the dielectric film 2 to apply oil in a pattern corresponding to the electrode pattern of the metal vapor deposition electrode onto the surface 2a of the dielectric film 2 to form an oil mask.

[0044] The backup roll 103e faces the plate roll 103d with the dielectric film 2 in between and abuts against the surface 2b of the dielectric film 2.

[0045] The dielectric film 2 that has passed through the insulation margin forming unit 102 and the pattern forming unit 103 is conveyed to the vapor deposition unit 104.

[0046] The vapor deposition section 104 includes metal vapor generation sections 104a and 104b, and a cooling roll 104c that faces the metal vapor generation sections 104a and 104b with a dielectric film 2 interposed therebetween. The metal vapor generation section 104a heats and evaporates a metal having the same component as the metal that is the material of the metal vapor deposition electrode to generate metal vapor, and deposits the generated metal vapor on the surface 2a of the dielectric film 2. The metal vapor generation section 104b heats and evaporates a metal having the same component as the metal that is the material of the electrode extraction section 12 to generate metal vapor, and deposits the metal vapor on top of the large electrode section 21 formed on the surface 2a of the dielectric film 2 by the metal vapor generation section 104a. As a result, the metal vapor deposition film in the electrode extraction section 12 portion becomes thicker than the metal vapor deposition film in other portions, and a heavy edge structure is formed. Note that the metal vapor generated in the metal vapor generation sections 104a and 104b adheres to portions other than the oil mask formed on the surface 2a of the dielectric film 2 to form a metal vapor deposition electrode. The cooling roll 104c contacts the dielectric film 2 to cool the dielectric film 2.

[0047] The metallized film 1 on which the metal vapor deposition electrode is formed on the dielectric film 2 is conveyed to and wound around a take-up roll 105. Note that after the metal vapor deposition, oil may be applied between the vapor deposition section 104 and the take-up roll 105 on at least one side (one side or both sides) of the metallized film. As described above, in the film capacitor element 10 of the present embodiment, physical properties such as the above-described α1 / Σ1, β1 / Σ1, average load, and hp / hmax can be adjusted according to the amount of oil between the metallized films 1.

[0048] By a manufacturing method using such a manufacturing apparatus, a desired metal vapor deposition electrode can be formed on the surface 2a of the dielectric film 2. Thereby, the metallized film 1 is obtained.

[0049] The metallized film 1 may be stored in the form of a metallized film roll wound in a roll shape. The metallized film roll may or may not have a core. It is preferable for the metallized film roll to have a core. The material of the core of the metallized film roll is not particularly limited. Examples of the material include paper (paper tube), resin, fiber-reinforced plastic (FRP), metal, etc. Examples of the resin include polyvinyl chloride, polyethylene, polypropylene, phenolic resin, epoxy resin, acrylonitrile-butadiene-styrene copolymer, etc. Examples of the plastic constituting the fiber-reinforced plastic include polyester resin, epoxy resin, vinyl ester resin, phenolic resin, thermoplastic resin, etc. Examples of the fiber constituting the fiber-reinforced plastic include glass fiber, aramid fiber (Kevlar (registered trademark) fiber), carbon fiber, polyparaphenylene benzoxazole fiber (Zylon (registered trademark) fiber), polyethylene fiber, boron fiber, etc. Examples of the metal include iron, aluminum, stainless steel, etc. The core of the metallized film roll also includes a core obtained by impregnating the paper tube with the resin. In this case, the material of the core is classified as a resin.

[0050] In the production of the element-width metallized film, the metallized film 1 is unwound from the metallized film roll and cut at the center in the film width direction of each insulating margin and each electrode extraction portion by a cutting blade. Here, the cutting may be performed linearly or non-linearly (for example, wavy). Then, the plurality of element-width metallized films obtained by cutting are each wound in a roll shape to produce an element-width metallized film roll.

[0051] Film capacitor FIG. 5 is a schematic perspective view of a film capacitor 11 (metallized film capacitor) using the film capacitor element 10 of the present embodiment.

[0052] As shown in FIG. 5, the film capacitor 11 includes at least a film capacitor element 10, a metallicon electrode 3, and a lead wire 4. Although not shown, if necessary, in the film capacitor 11, the outer surface of the film capacitor element 10 is filled with a resin case and an epoxy resin, or protected by immersion in an epoxy resin, etc., to prevent moisture and oxygen from entering the element interior and prevent oxidation degradation of the element.

[0053] As described above, the capacitor element 10 is obtained by winding two element-width metallized films on top of each other. The capacitor element is flattened by pressing the metallized film wound body. That is, the film capacitor element of the present embodiment can also be referred to as a flattened film capacitor element, a flattened film capacitor element, etc., and the film capacitor of the present embodiment can be referred to as a flattened film capacitor, a flattened film capacitor, a flattened metal film capacitor, etc.

[0054] In the manufacture of the film capacitor 11, usually, two metallized films of approximately one element width are wound (rolled up) to produce a film capacitor element 10. The width of one film capacitor element 10 is usually larger than the width of the metallized film because (1) the two metallized films are wound with a shift in the film width direction, and (2) as will be described later, when metallizing is performed to produce a metallicon electrode, the thickness increases by the thickness of the sprayed metal film.

[0055] The metallicon electrode 3 is formed by performing metallizing on both ends of the film capacitor element 10 in the film width direction and then performing a heat curing treatment (heat aging). The heat curing treatment (heat aging) is to heat cure the element under vacuum at a high temperature (for example, 70 to 150 °C). The reason for using vacuum is to remove the air remaining between the element-width metallized films wound in a roll and overlapping, and prevent the element-width metallized films from being oxidized. In the present embodiment, the film capacitor element 10 before the heat treatment is expressed as a film capacitor element intermediate.

[0056] The lead wire 4 is connected to the metallized electrode 3 formed as described above, for example, by soldering or welding.

[0057] The film capacitor 11 of the present invention can be used for various metallized film capacitors. The metallized film capacitor can be used for the following various applications. That is, (1) portable terminals (mobile phones, portable music players, smartphones, tablet terminals, wearable devices, etc.), (2) personal computers, (3) digital cameras, (4) home appliances (televisions, DVD recorders, refrigerators, washing machines, air conditioners, etc.), (5) car navigation, (6) power conditioners for power generation (solar power, wind power, etc.), (7) LED lighting, (8) automobiles (electric vehicles, hybrid vehicles, plug-in hybrid vehicles, etc.), (9) railway vehicles, (10) construction machinery, (11) industrial equipment, (12) various other inverters, and the like. Among them, it can be used for film capacitors used in applications such as automobiles and power where high-frequency characteristics are required.

[0058] Film capacitor element intermediate As described above, the film capacitor element intermediate body of the present embodiment is a film capacitor element before being subjected to the thermosetting treatment. Since the film capacitor element intermediate body of the present embodiment is in a state before thermosetting, it has the characteristic of being soft compared to the film capacitor element 10. By subjecting the film capacitor element intermediate body of the present embodiment to the thermosetting treatment to obtain the film capacitor element 10 of the present embodiment, physical properties such as the above-mentioned α1 / Σ1, β1 / Σ1, average load, hp / hmax, etc. provided by the film capacitor element 10 can be suitably imparted to the film capacitor element 10.

[0059] The film capacitor element intermediate of this embodiment is a film capacitor element intermediate before being subjected to a thermosetting treatment, comprising a flattened metallized film wound body. When a load of 200 N is applied in the minor axis direction of the film capacitor element intermediate, the ratio (α2 / Σ2) of the displacement amount α2 (mm) to the minor axis Σ2 (mm) of the film capacitor element intermediate before applying the load is 7.0% or more. When a load of 400 N is applied in the minor axis direction of the film capacitor element intermediate, the ratio (β2 / Σ2) of the displacement amount β2 (mm) to the minor axis Σ2 (mm) of the film capacitor element intermediate is 8.5% or more. The displacement amount α1 (mm) is the displacement amount when a load of 200 N is applied in the minor axis direction of the film capacitor element intermediate, and the displacement amount β1 (mm) is the displacement amount when a load of 400 N is applied in the minor axis direction of the film capacitor element intermediate.

[0060] By having such a configuration, the film capacitor element intermediate according to this embodiment can suitably manufacture a film capacitor element 10 having physical properties such as the above-mentioned α1 / Σ1, β1 / Σ1, average load, hp / hmax, etc. after being subjected to a thermosetting treatment. The element processing by flattening is appropriate, the variation in capacitance is small, and characteristics excellent in withstand voltage can be imparted to the film capacitor element 10.

[0061] From the viewpoint of more suitably exhibiting the effects of the present invention, α2 / Σ2 of the film capacitor element intermediate is preferably 6.5.0 to 8.0%, more preferably 7.0 to 7.5%, and even more preferably 7.0 to 7.2%.

[0062] Also, from the viewpoint of more suitably exhibiting the effects of the present invention, β2 / Σ2 of the film capacitor element intermediate is preferably 8.5 to 9.5%, more preferably 8.5 to 9.2%, and even more preferably 8.5 to 9.0%.

[0063] From the viewpoint of more preferably exhibiting the effects of the present invention, α2 of the film capacitor element intermediate is preferably 1.32 to 1.56 mm, more preferably 1.32 to 1.45 mm, and still more preferably 1.35 to 1.40 mm. From the same viewpoint, β2 of the film capacitor element intermediate is preferably 1.66 to 1.85 mm, more preferably 1.66 to 1.79 mm, and still more preferably 1.66 to 1.85 mm.

[0064] From the viewpoint of more preferably exhibiting the effects of the present invention, when a load is applied in the major axis direction x of the film capacitor element intermediate and displaced by 2 to 20 mm, the average load is preferably 45 N or less, more preferably 45 to 30 N, and still more preferably 45 to 35 N. The measurement of the average load is carried out according to the description in the examples.

[0065] From the viewpoint of more preferably exhibiting the effects of the present invention, when a maximum load of 500 N is applied at a compression speed of 5.0 mm / min in the minor axis direction of the film capacitor element intermediate and then unloading is performed at a speed of 5.0 mm / min in the load release direction until the load reaches 0 N, it is preferable that the displacement amount hmax at the maximum load of 500 N and the displacement amount hp at the load of 0 N satisfy the relationship of hp / hmax = 40% or less, more preferably the relationship of 40 to 30%, and still more preferably the relationship of 35 to 30%.

[0066] The metallized film used for the film capacitor element intermediate is as described for the film capacitor element 10.

Examples

[0067] Examples and comparative examples are shown below to explain the present invention in detail. However, the present invention is not limited to the examples. Unless otherwise specified, "parts" and "%" indicate "parts by mass" and "mass%", respectively.

[0068] (Examples 1 to 4 and Comparative Examples 1 to 4) <Manufacture of Film Capacitor Element Intermediate and Film Capacitor Element> As a dielectric film, a roll of PP (polypropylene) film with a thickness of 2.5 μm and a width of 620 mm was prepared. Using an Alvac roll-to-roll vacuum evaporation apparatus (EWE-060), an insulating margin and a split electrode pattern were formed by oil masking according to the 30 mm-width element specification on this film roll, and aluminum was evaporated to form an electrode on the dielectric film. At the same time, zinc was evaporated to form a heavy edge (electrical introduction part) on the film. As the dielectric films, those having the haze values shown in Table 1 were used respectively. The method for measuring haze is as described later. Then, in Examples 1 to 3 and Comparative Examples 1 and 2, in the evaporation chamber, silicone oil that was heated and evaporated at each evaporation temperature shown in Table 1 was further evaporated onto the surface of the metal evaporation electrode to obtain a metallized film roll with an electrode pattern having an Al metal film resistance of 20 Ω / □ and a Zn metal film resistance of 5 Ω / □. On the other hand, in Example 4 and Comparative Examples 3 and 4, a metallized film roll with an electrode pattern having an Al metal film resistance of 20 Ω / □ and a Zn metal film resistance of 5 Ω / □ was obtained without evaporating silicone oil.

[0069] Each of the produced metallized film rolls was cut with a slitter into 30 mm width × 20 divisions to produce small reels of metallized film for element winding with a film width of 30 mm, an insulating margin width of 2.0 mm, and a heavy edge width of 1.5 mm. Using two small reels produced, with a Kaito Seisakusho fully automatic winding machine for metallized film capacitors (3KAW-N2), winding was performed for 1585 turns under the condition of a tension of 180 g in a form where the two cut metallized films overlapped to be symmetric in the width direction to form an element winding such that the capacitance was 50 μF ± 1 μF. The wound round elements were press-treated at a pressure of 5.0 kgf / cm 2 so that the element flatness ratio was 0.60 to 0.61 to perform a flattening process. For the flattened elements, metallikon spraying was performed on the element end faces to form film electrode extraction parts, thereby obtaining intermediate bodies of each film capacitor element for evaluation.

[0070] The obtained film capacitor element intermediate was heat-treated at 120 °C for 15 hours under high temperature in a vacuum to cure the film capacitor element intermediate into a film capacitor element. Further, leads were attached to the metallized film portion, placed in a resin case, and the gap was filled with an epoxy resin and cured to obtain each film capacitor element (film capacitor) for evaluation.

[0071] <Haze of the dielectric film> The haze of the dielectric film was measured in accordance with JIS K 7136:2000 using a haze meter ("NDH-5000" manufactured by Nippon Denshoku Industries Co., Ltd.). Samples were cut out by slitting from the dielectric film rolls before and after vapor deposition. For each sample, five points in the width direction and three points in the flow direction were measured, and the haze value was obtained by averaging.

[0072] <Coefficient of friction of the metallized film> Using a Haydon tribogear TYPE14FW manufactured by Shinto Kagaku Co., Ltd., the frictional force in the flow direction of the fabricated metallized film was measured. The non-vapor-deposited surface of the metallized film was set face-up on the device moving table, and the vapor-deposited surface of the metallized film was set face-up on the measurement jig side, and the metallized film was arranged so that the front and back of the metallized film became the friction surfaces. Also, the metallized film was set so that the table moving direction was the flow direction. A balance copper weight was set on the load conversion machine side, and after adjusting so that the balance arm was parallel, a load copper weight was set on the measurement jig side. The metallized film on the moving table was brought into contact with the metallized film of the measurement jig, the moving table was moved at a constant speed, and the static friction coefficient and kinetic friction coefficient between the films were measured. The measurement jig was for a contact area of 30 mm□, the load copper weight was 50 g, the table moving speed was 100 mm / min, and the table moving amount was 66 mm. The results are shown in Table 1.

[0073] <Measurement of load-displacement amount> A film capacitor element and a film capacitor element intermediate were used as samples to be measured respectively. The load-displacement amount of the sample was measured using a load-displacement measuring unit (FSA-1KE-500N) manufactured by IMADA Co., Ltd. The sample was compressed, and the load applied to the sample during compression and the deformation amount (displacement) of the measured sample were measured as an F-S curve. A disk flat compression jig (S-60) was attached to a force gauge for load measurement (ZTA-500N) and set in the displacement measuring unit (FSA-1KE). The sample was set at the center of the sample stage of FSA-1KE, and the point where the disk flat compression jig contacted the sample and the load did not change was taken as the origin of the displacement amount. The sample was compressed at the set speed, and when the set maximum load (500N) or the set maximum displacement (20mm) was reached, the load was unloaded at the set speed, and the load applied to the sample and the sample displacement amount with respect to the load until it returned to the origin position were graphed as an S-F curve.

[0074] <Measurement of Σ1 and Σ2> Using a Mitutoyo vernier caliper CD-P15MWW, five points were measured in the element width direction (metallized film width direction) and averaged to obtain Σ1 and Σ2.

[0075] Regarding the minor axis direction y, the sample was compressed in the minor axis direction (y direction) at a constant compression speed of 5.0 mm / min. Compression was performed until the sample load reached 500N. After compression, unloading was performed at a speed of 5.0 mm / min to the origin position of the displacement amount, and an F-S curve at this time was obtained. From the obtained F-S curve, the sample displacement amount (α) at a load of 200N and the sample displacement amount (β) at 400N were read, and after dividing by the minor axis (Σ) of the sample, α / Σ and β / Σ were calculated.

[0076] Also, from the obtained F-S curve, the sample displacement amount (hmax) at a maximum load of 500N and the plastic strain amount (hp) of the sample when the load became 0N by unloading were read, and hp / hmax was calculated.

[0077] Regarding the major axis direction x, the sample was compressed in the major axis direction (x direction) at a constant compression speed of 20.0 mm / min until the displacement amount changed by 20 mm, and the F-S curve at this time was obtained. From the obtained F-S curve, the compression load between the sample displacement amounts of 2 - 20 mm was read, and the average load was calculated. The compression load was also read for the sample displacement amount between 5 - 20 mm, and the average load was calculated in the same manner.

[0078] Each result is shown in Table 3.

[0079] <Evaluation of Element Processability> Each of the obtained film capacitor elements was visually observed, and a visual evaluation of the element processability was performed from the viewpoints of the presence or absence of buckling and the formation of wrinkles. The evaluation criteria for buckling were: ○: no buckling, △: 3 or fewer buckles, ×: more than 3 buckles, and the evaluation criteria for the formation of wrinkles were: ○: no wrinkles, △: 2 or fewer wrinkles, ×: more than 2 wrinkles. Each result is shown in Table 3.

[0080] <Short-Term Dielectric Withstand Voltage Test> After applying a voltage to the film capacitor element at room temperature for 10 seconds, the capacitance of the film capacitor element was measured. This voltage application test was carried out while gradually increasing the voltage, and the voltage at which the capacitance reduction rate reached 1%, and the voltage at which the capacitance reduction rate reached 2% were investigated. Also, the standard deviation of the variation in capacitance at n = 9 was obtained. Each result is shown in Table 3.

[0081]

Table 1

[0082]

Table 2

[0083]

Table 3

Explanation of Symbols

[0084] 1 Metallized film 2 Dielectric film 2a Surface 2b Surface 2R Dielectric film roll 3 Metallicon electrode 4 Lead wire 10 Film capacitor element 11 Film capacitor 101 Dielectric film supply section 102 Insulating margin forming section 103 Pattern forming section 103d Plate roll 104 Evaporation section 104a Metal vapor generation section 104b Metal vapor generation section (for generating electrode extraction section) 104c Cooling roll 105 Take-up roll

Claims

1. A film capacitor element comprising a flattened metallized film wound body, wherein when a load of 200 N is applied in the minor axis direction of the film capacitor element, the ratio (α1 / Σ1) of the displacement amount α1 (mm) to the minor axis Σ1 (mm) of the film capacitor element before the application of the load is 2.5% or more, when a load of 400 N is applied in the minor axis direction of the film capacitor element, the ratio (β1 / Σ1) of the displacement amount β1 (mm) to the minor axis Σ1 (mm) of the film capacitor element is 4.0% or more, the film capacitor element.

2. The film capacitor element according to claim 1, wherein an average load when a load is applied in the major axis direction of the film capacitor element and displaced by 2 to 20 mm is 50 N or less.

3. When the load is removed at a speed of 5.0 mm / min in the load release direction immediately after applying a maximum load of 500 N at a compression speed of 5.0 mm / min in the minor axis direction of the film capacitor element, the displacement amount hmax at the maximum load of 500 N and the displacement amount hp at a load of 0 N satisfy hp / hmax = 45% or less, the film capacitor element according to claim 1 or 2.

4. The film capacitor element according to any one of claims 1 to 3, wherein the metallized film wound body contains oil between the metallized films included in the metallized film wound body.

5. The metallized film included in the metallized film wound body is a metal layer integrated film having a dielectric film and a metal layer laminated on one side of the dielectric film, The film capacitor element according to any one of claims 1 to 4, wherein the haze of the dielectric film is 2.0% or less.

6. The metallized film included in the metallized film wound body is a metal layer integrated film having a dielectric film and a metal layer laminated on one side of the dielectric film, the static friction coefficient μs between the surface of the dielectric film of the metallized film and the surface of the metal layer is 2.0 or less, and the kinetic friction coefficient μk is 1.2 or less, The film capacitor element according to any one of claims 1 to 5, wherein the value calculated by the following formula is in the range of 0.25 to 0.

45. (μs - μk) / μs

7. A film capacitor element intermediate before being subjected to a thermosetting treatment, comprising a flattened metallized film wound body, wherein When a load of 200 N is applied in the minor axis direction of the film capacitor element intermediate body, the ratio (α2 / Σ2) of the displacement amount α2 (mm) to the minor axis Σ2 (mm) of the film capacitor element intermediate body before applying the load is 7.0% or more. The film capacitor element intermediate body, when a load of 400 N is applied in the minor axis direction of the film capacitor element intermediate body, the ratio (β2 / Σ2) of the displacement amount β2 (mm) to the minor axis Σ2 (mm) of the film capacitor element intermediate body is 8.5% or more.

8. The film capacitor element intermediate body according to claim 7, wherein when a load is applied in the major axis direction of the film capacitor element intermediate body and displaced by 2 to 20 mm, the average load is 50 N or less.

9. When unloading to 0 N of load at a speed of 5.0 mm / min in the load release direction immediately after applying a maximum load of 500 N at a compression speed of 5.0 mm / min in the minor axis direction of the film capacitor element intermediate body, the displacement amount hmax at the maximum load of 500 N and the displacement amount hp at 0 N of load satisfy hp / hmax = 40% or less. The film capacitor element according to claim 7 or 8. 。

10. A film capacitor comprising the film capacitor element according to any one of claims 1 to 6, a metallicon electrode, and a lead wire.

11. A metallized film for use in the film capacitor element according to any one of claims 1 to 6, wherein the metallized film is a metal layer integral film having a dielectric film and a metal layer laminated on one side of the dielectric film. The static friction coefficient μs between the surface of the dielectric film of the metallized film and the surface of the metal layer is 2.0 or less, and the kinetic friction coefficient μk is 1.2 or less. The metallized film, wherein the value calculated by the following formula is in the range of 0.25 to 0.

45. (μs - μk) / μs

Images