Image display device and method for manufacturing the same

Abstract

An image display device according to an embodiment is provided with: a substrate; a first wire formed on the substrate along a first direction; a first light emitting element provided on the first wire and having a first light emitting surface; a first optically transmissive electrode formed along a second direction intersecting the first direction and provided on the first light emitting surface; a first anisotropic electrically conductive member provided on the first wire; a first terminal electrically connected to the first wire via the first anisotropic electrically conductive member; a second anisotropic electrically conductive member provided on the first optically transmissive electrode; and a second terminal electrically connected to the first optically transmissive electrode via the second anisotropic electrically conductive member. The first light emitting element has a first bottom surface on the first wire, and the first light emitting surface is provided on a side opposite the first bottom surface.

Description

Technical Field

[0001] Embodiments of the present invention relate to an image display device and a method for manufacturing the image display device.

Background Art

[0002] There is a demand for a high-definition image display device with a resolution exceeding 1000 ppi (pitch per inch). Further, for image materials displayed by such a high-definition image display device, high-speed response performance may be required.

[0003] In order to realize a display capable of high-speed response, an active matrix method may be adopted (see, for example, Patent Document 1). In the active matrix method, miniaturization of transistors for driving pixels is required, but it is difficult to realize a high-definition display exceeding 1000 ppi even using the latest low temperature polycrystalline silicon (LTPS) process.

[0004] On the other hand, in a conventional passive matrix liquid crystal display or a display using an organic semiconductor that does not require a transistor for pixel driving, the response speed is slow, and it may not be suitable for displaying image materials that require high-speed response.

[0005] It is desired to realize an image display device and a method for manufacturing the image display device that are capable of high definition and high-speed response.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] One embodiment of the present invention provides an image display device and a method for manufacturing the image display device that shorten the transfer process of a light-emitting element and improve the yield.

Means for Solving the Problems

[0008] An image display device according to an embodiment of the present invention includes a substrate, a first wiring formed on the substrate along a first direction, a first light-emitting element provided on the first wiring and having a first light-emitting surface, a first light-transmissive electrode formed along a second direction intersecting the first direction and provided on the first light-emitting surface, a first anisotropic conductive member provided on the first wiring, a first terminal electrically connected to the first wiring via the first anisotropic conductive member, a second anisotropic conductive member provided on the first light-transmissive electrode, and a second terminal electrically connected to the first light-transmissive electrode via the second anisotropic conductive member. The first light-emitting element has a first bottom surface on the first wiring, and the first light-emitting surface is provided on the side opposite to the first bottom surface.

[0009] An image display device according to an embodiment of the present invention includes a substrate, a first wiring formed on the substrate along a first direction, a first semiconductor layer provided on the first wiring, a first light-emitting layer provided on the first semiconductor layer, a second light-emitting layer provided on the first semiconductor layer and separated from the first light-emitting layer along the first direction, a semiconductor layer having a conductivity type different from that of the first semiconductor layer, provided on the first light-emitting layer and including a first light-emitting surface, a semiconductor layer having the same conductivity type as the second semiconductor layer, provided on the second light-emitting layer and including a second light-emitting surface, a first light-transmissive electrode formed along a second direction intersecting the first direction and provided on the first light-emitting surface, a second light-transmissive electrode formed along the second direction and provided on the second light-emitting surface, a first anisotropic conductive member provided on the first wiring, a first terminal electrically connected to the first wiring via the first anisotropic conductive member, a second anisotropic conductive member provided on the first light-transmissive electrode and the second light-transmissive electrode, a second terminal electrically connected to the first light-transmissive electrode via the second anisotropic conductive member, and a third terminal electrically connected to the second light-transmissive electrode via the second anisotropic conductive member. The first light-emitting surface is provided on the side opposite to the surface in contact with the first light-emitting layer. The second light-emitting surface is provided on the side opposite to the surface in contact with the second light-emitting layer.

[0010] A method for manufacturing an image display device according to an embodiment of the present invention includes: a step of preparing a second substrate having a semiconductor layer including a light-emitting layer formed on a first substrate; a step of forming a first conductive layer on a first surface of a third substrate; a step of bonding the semiconductor layer to the third substrate via the first conductive layer; a step of removing the first substrate; a step of processing the first conductive layer to form a first wiring along a first direction; a step of processing the semiconductor layer to form a first light-emitting element having a first light-emitting surface and a second light-emitting element having a second light-emitting surface; a step of forming an insulating film covering the first surface, the first wiring, the first light-emitting element, and the second light-emitting element; a step of removing a part of the insulating film to expose the first light-emitting surface and the second light-emitting surface; a step of forming a first light-transmissive electrode provided along a second direction intersecting the first direction on the first light-emitting surface, and forming a second light-transmissive electrode provided along the second direction on the second light-emitting surface; a step of providing a first anisotropic conductive member between a first terminal and the first wiring, and electrically connecting the first terminal and the first wiring by pressure applied between the first terminal and the first wiring; and a step of electrically connecting the first light-transmissive electrode and a second terminal via a second anisotropic conductive member, and electrically connecting the second light-transmissive electrode and a third terminal via the second anisotropic conductive member. The first light-emitting element has a first bottom surface connected to the first wiring, and the first light-emitting surface is provided on the opposite side of the first bottom surface. The second light-emitting element has a second bottom surface connected to the first wiring, and the second light-emitting surface is provided on the opposite side of the second bottom surface.

[0011] A method for manufacturing an image display device according to an embodiment of the present invention includes the steps of preparing a second substrate having a semiconductor layer including a light-emitting layer formed on a first substrate; forming a second conductive layer on the semiconductor layer; preparing a third substrate having a first surface; bonding the semiconductor layer to the first surface via the second conductive layer; removing the first substrate; processing the second conductive layer to form a first wiring along a first direction; processing the semiconductor layer to form a first light-emitting element having a first light-emitting surface and a second light-emitting element having a second light-emitting surface; forming an insulating film covering the first surface, the first wiring, the first light-emitting element, and the second light-emitting element; removing a part of the insulating film to expose the first light-emitting surface and the second light-emitting surface; forming a first light-transmissive electrode provided along a second direction intersecting the first direction on the first light-emitting surface, and forming a second light-transmissive electrode provided along the second direction on the second light-emitting surface; providing a first anisotropic conductive member between a first terminal and the first wiring, and electrically connecting the first terminal and the first wiring by pressure applied between the first terminal and the first wiring; and electrically connecting the first light-transmissive electrode and a second terminal via a second anisotropic conductive member, and electrically connecting the second light-transmissive electrode and a third terminal via the second anisotropic conductive member. The first light-emitting element has a first bottom surface connected to the first wiring, and the first light-emitting surface is provided on the opposite side of the first bottom surface. The second light-emitting element has a second bottom surface connected to the first wiring, and the second light-emitting surface is provided on the opposite side of the second bottom surface.

Advantages of the Invention

[0012] According to an embodiment of the present invention, an image display device capable of high definition and high-speed response is realized.

[0013] According to an embodiment of the present invention, a method for manufacturing an image display device capable of high definition and high-speed response is realized.

Brief Description of the Drawings

[0014]

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Embodiments for Carrying Out the Invention

[0015] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as the actual ones. Also, even when representing the same part, the dimensions and ratios may be represented differently in the drawings. In the present specification and each figure, elements similar to those described above with respect to the previously shown figures are denoted by the same reference numerals, and detailed descriptions thereof are appropriately omitted.

[0016] (First Embodiment) FIG. 1 is a schematic plan view illustrating an image display device according to the present embodiment. As shown in FIG. 1, the image display device 1 of the present embodiment includes a display area 2, a row selection circuit 5, and a current drive circuit 7. The display area 2, the row selection circuit 5, and the current drive circuit 7 are provided on a substrate 100. A row wiring area 6 and a column wiring area 8 are also provided on the substrate 100. The row wiring area 6 is provided between the display area 2 and the row selection circuit 5 and electrically connects the display area 2 and the row selection circuit 5. The column wiring area 8 is provided between the display area 2 and the current drive circuit 7 and electrically connects the display area 2 and the current drive circuit 7. In addition to the above, the substrate 100 is provided with a connector 106 for connecting the row selection circuit 5 and the current drive circuit 7 to an external circuit and supplying a power source and a selection signal for appropriately operating them.

[0017] In the following description, a three-dimensional coordinate system of XYZ may be used for explanation. The first surface 103a of the substrate 100 on which the display area 2 is formed is a surface parallel to the XY plane. The display area 2 is formed on the first surface 103a. In this example, the display area 2 is a rectangle having sides substantially parallel to the X axis and substantially parallel to the Y axis. As shown in FIG. 2 described later, the sub-pixels 20 are arranged along the X axis and along the Y axis within the display area 2.

[0018] The row selection circuit 5, the row wiring region 6, the current drive circuit 7, and the column wiring region 8 are also formed on the first surface 103a. The row selection circuit 5 is provided along one side of the display region 2. The side of the display region 2 where the row selection circuit 5 is provided is a side parallel to the Y-axis. The current drive circuit 7 is provided on another side of the display region 2. The side of the display region 2 where the current drive circuit 7 is provided is a side parallel to the X-axis.

[0019] The row selection circuit 5 and the row wiring region 6 are semiconductor integrated circuits provided, for example, by TCP (Tape Carrier Package), and the current drive circuit 7 and the column wiring region 8 are also semiconductor integrated circuits provided by TCP. The row selection circuit 5 and the current drive circuit 7 are not limited to being provided by TCP, and may be provided by COB (Chip On Board) or the like.

[0020] As shown in FIG. 2 described later, the sub-pixel 20 includes a light-emitting element 150. The light-emitting element 150 has a light-emitting surface 151S that emits light in a direction along the Z-axis within the display region 2. The light emission direction of the light-emitting element 150 is the positive direction of the Z-axis. Hereinafter, the positive direction of the Z-axis may be referred to as "up" or "above", and the negative direction of the Z-axis may be referred to as "down" or "below", but the direction along the Z-axis is not necessarily the direction in which gravity acts. Also, the length in the direction along the Z-axis may be referred to as the height.

[0021] FIG. 2 is a schematic enlarged view illustrating a part of the image display device of the present embodiment. FIG. 2 shows enlarged views of parts a, b, and c shown in FIG. 1. Part a is a part within the display region 2 in FIG. 1. Part b is a part of the region spanning the display region 2 and the row wiring region 6 in FIG. 1. Part c is a part of the region spanning the display region 2 and the column wiring region 8 in FIG. 1. As shown in FIG. 2, the image display device 1 includes a sub-pixel 20, a wiring 110a, a light-emitting element 150, a translucent electrode 160k, a first terminal 34, and a second terminal 44.

[0022] The wiring 110a is provided along the X-axis direction (the first direction). A plurality of wirings 110a are provided. The plurality of wirings (the first wiring, the second wiring) 110a are provided so as to be spaced apart in the Y-axis direction and be substantially parallel to each other at substantially equal intervals. The wiring 110a is connected to the first terminal 34 in the row wiring region 6 shown in FIG. 1 at one end. The wiring 110a is electrically connected to the first terminal 34 in the connection region 36.

[0023] The light-emitting element 150 is provided on the wiring 110a. A plurality of light-emitting elements 150 are provided, and the plurality of light-emitting elements (the first light-emitting element, the second light-emitting element) 150 are arranged on the wiring 110a at substantially equal intervals in the X-axis direction.

[0024] The translucent electrode 160k is provided along the Y-axis direction (the second direction). A plurality of translucent electrodes 160k are provided. The plurality of translucent electrodes (the first translucent electrode, the second translucent electrode) 160k are provided so as to be spaced apart in the X-axis direction and be substantially parallel to each other at substantially equal intervals. The translucent electrode 160k is connected to the second terminal 44 in the column wiring region 8 shown in FIG. 1 at one end. The first translucent electrode 160k is electrically connected to the second terminal 44 in the connection region 46.

[0025] The wiring 110a and the translucent electrode 160k are provided so as to be substantially orthogonal. The light-emitting element 150 is provided at the intersection of the wiring 110a and the translucent electrode 160k. Therefore, the light-emitting elements 150 are arranged at substantially equal intervals along the X-axis direction and are arranged at substantially equal intervals along the Y-axis direction. The interval between the light-emitting elements 150 in the X-axis direction is substantially the same as the interval between the light-emitting elements 150 in the Y-axis direction. That is, in this example, the light-emitting elements 150 are arranged in a matrix with equal intervals.

[0026] The arrangement of the light-emitting elements 150 is not limited to the above, and may be, for example, a staggered pattern. The wiring 110a and the translucent electrode 160k are not limited to the case where they are orthogonal according to the arrangement of the light-emitting elements 150, nor are they limited to the case where they are provided linearly. Further, the light-emitting elements 150 are not limited to a matrix arrangement with equal intervals, and the ratio of the interval in the X-axis direction to the interval in the Y-axis direction may be, for example, about 1 to 3. The light-emitting elements 150 can arbitrarily set an appropriate arrangement.

[0027] The interval at which the light-emitting elements 150 are separated in the X-axis direction is called the pitch in the X-axis direction, and the interval at which the light-emitting elements 150 are separated in the Y-axis direction is called the pitch in the Y-axis direction. In the examples in the following embodiments, since the pitch in the X-axis direction and the pitch in the Y-axis direction of the light-emitting elements are set to be substantially equal, the interval between the light-emitting elements 150 may sometimes be simply called the pitch. For example, the pitch in the X-axis direction is defined as the length between the centers of the lengths in the X-axis direction of the light-emitting elements adjacent in the X-axis direction, and the pitch in the Y-axis direction is defined as the length between the centers of the lengths in the Y-axis direction of the light-emitting elements adjacent in the Y-axis direction.

[0028] Figs. 3A to 4B are schematic cross-sectional views illustrating a part of the image display device of the present embodiment. Fig. 3A is a cross-sectional view taken along the line A-A' of Fig. 2. Fig. 3B is a cross-sectional view taken along the line AA-AA' of Fig. 2. Fig. 4A is a cross-sectional view taken along the line B-B' of Fig. 2. Fig. 4B is a cross-sectional view taken along the line C-C' of Fig. 2. In the examples described below, in each sub-pixel 20 of the image display device 1, the color filter 180 is provided on the light-emitting element 150. In the image display device 1 of the present embodiment, it is assumed that one pixel 10 is composed of three sub-pixels 20. Note that the color filter 180 may be a single-color optical filter according to the number of colors of the image to be displayed, or the optical filter may not be provided. When a single-color optical filter is provided or when the optical filter is not provided, it is assumed that one pixel is composed of one sub-pixel 20.

[0029] As shown in FIGS. 3A and 3B, pixel 10 includes three sub-pixels 20. The three sub-pixels 20 each have a different color conversion unit 182, and the color conversion unit 182 is arranged to output, for example, red, green, and blue. In this example, the color conversion units that output red, green, and blue are arranged in ascending order of the X coordinate. The configuration of each sub-pixel 20 is the same except for the color output by the color conversion unit 182. The configuration of the color filter 180 including the color conversion unit 182 will be described later.

[0030] Sub-pixel 20 includes a substrate 100. Substrate 100 includes a Si substrate 102 and oxide films 101, 103. Oxide film 103 is formed over one surface 102a of Si substrate 102. Oxide film 101 is formed over the other surface 102b of Si substrate 102. The first surface 103a of substrate 100 is the surface of oxide film 103.

[0031] Sub-pixel 20 includes a wiring 110a, a light-emitting element 150, and a light-transmissive electrode 160k.

[0032] Wiring layer 110 is provided on the first surface 103a. Wiring layer 110 includes a plurality of wirings 110a provided on the first surface 103a. The plurality of wirings 110a are formed along the X axis on the first surface 103a. The plurality of wirings 110a are provided so as to be spaced apart in the Y-axis direction and substantially parallel to each other. The interval at which the plurality of wirings 110a are spaced apart is made equal to the pitch of the light-emitting element 150 in the Y-axis direction. Adjacent wirings 110a among the plurality of wirings 110a are separated by an insulating layer 112.

[0033] In cross-sectional views from FIG. 3A onward, unless otherwise specified, the reference numeral representing the wiring layer is shown beside the wiring constituting the wiring layer.

[0034] On wiring 110a, bonding metals (metal layers) 114 and 115 are provided. The bonding metals 114 and 115 are laminated in this order from the side of the wiring 110a. The bonding metals 114 and 115 are arranged to be equal to the pitch of the light-emitting element 150 in the X-axis direction. The bonding metal 115 is provided for ohmic connection with the light-emitting element 150 and reduces the connection resistance with the wiring 110a. By providing the bonding metals 114 and 115 with appropriate thicknesses, the light-emitting element 150 and the wiring 110a can be connected with a lower resistance value.

[0035] The bonding metals 114 and 115 are preferably formed of a metal material having high light reflectivity such as Ag. The bonding metals 114 and 115 are provided below the bottom surface 153B of the light-emitting element 150. Therefore, due to the light reflectivity of the bonding metals 114 and 115, scattered light or the like below the light-emitting element 150 can be reflected toward the light-emitting surface 151S side, and the substantial light-emitting efficiency of the light-emitting element 150 can be improved.

[0036] The light-emitting element (first light-emitting element, second light-emitting element) 150 is provided on the bonding metal 115. The light-emitting element 150 includes a bottom surface (first bottom surface, second bottom surface) 153B and a light-emitting surface (first light-emitting surface, second light-emitting surface) 151S. The light-emitting element 150 is a frustum-shaped element having the bottom surface 153B on the bonding metal 115 and the light-emitting surface 151S on the surface opposite to the bottom surface 153B. In a plan view in the XY plane, the outer periphery of the bottom surface 153B substantially coincides with the outer peripheries of the bonding metals 114 and 115. The bonding metals 114 and 115 are formed in a columnar shape that substantially coincides with the outer periphery of the bottom surface. The shape of the light-emitting element 150 is not limited to a frustum of a cone, and may be a cylinder, or a frustum of a pyramid or a prism. In the case of a frustum of a cone or a cylinder, the outer peripheral shape is not limited to a circle and may be an ellipse. In the case of a pyramid or a prism, the outer peripheral shape is not limited to a square and may be a polygon such as a hexagon or an octagon. In the case of a pyramid or a prism, the corners may be rounded.

[0037] The light-emitting element 150 includes a p-type semiconductor layer 153, a light-emitting layer 152, and an n-type semiconductor layer 151. The p-type semiconductor layer 153, the light-emitting layer 152, and the n-type semiconductor layer 151 are stacked in this order from the bottom surface 153B toward the light-emitting surface 151S. The p-type semiconductor layer 153 includes the bottom surface 153B, and the bonding metal 115 is electrically connected to the p-type semiconductor layer 153. Therefore, the p-type semiconductor layer 153 is electrically connected to the wiring 110a via the bonding metals 114 and 115. A plurality of light-emitting elements 150 are provided along the X-axis direction on a single wiring 110a, and the p-type semiconductor layers 153 of these plurality of light-emitting elements 150 are electrically connected to each other.

[0038] For the light-emitting element 150, for example, In X Al Y Ga 1-X-Y A gallium nitride-based compound semiconductor including a light-emitting layer such as N (0 ≦ X, 0 ≦ Y, X + Y < 1) is preferably used. Hereinafter, the above-described gallium nitride-based compound semiconductor may be simply referred to as gallium nitride (GaN). The light-emitting element 150 in one embodiment of the present invention is a so-called light-emitting diode. The wavelength of the light emitted by the light-emitting element 150 may be any wavelength in the range from the near-ultraviolet region to the visible light region, for example, about 467 nm ± 30 nm. The wavelength of the light emitted by the light-emitting element 150 may be blue-violet light of about 410 nm ± 30 nm. The wavelength of the light emitted by the light-emitting element 150 is not limited to the above values and can be appropriate.

[0039] The light-emitting element 150 is provided on the wiring 110a via the bonding metals 114 and 115 with a pitch on the X-axis on the X-axis. The p-type semiconductor layers 153 of the light-emitting elements 150 provided on the same wiring 110a are electrically connected to each other.

[0040] The insulating film 156 is provided to cover the insulating layer 112, the bonding metals 114 and 115, and the light-emitting element 150. In this example, a part of the insulating film 156 is removed above the light-emitting element 150, and the insulating film 156 covers the area other than the removed part above the light-emitting element 150. The insulating film 156 is provided to protect the light-emitting element 150 from the external environment and to separate adjacent light-emitting elements 150 from each other. The light-emitting surface 151S emits light through the translucent electrode 160k from the opening 158 where the insulating film 156 is removed. The shape of the light-emitting surface 151S in the XY plane view may be a circle similar to the shape of the n-type semiconductor layer 151 in the XY plane view, or other shapes.

[0041] The translucent wiring layer 160 includes a plurality of translucent electrodes 160k. The plurality of translucent electrodes 160k are respectively provided along the Y-axis. The plurality of translucent electrodes 160k are provided so as to be spaced apart in the X-axis direction and substantially parallel to each other. The translucent electrode 160k is provided over the light-emitting surface 151S. The light-emitting elements 150 are arranged with a certain pitch in the X-axis direction and the Y-axis direction. Therefore, the center-to-center distance in the X-axis direction between adjacent translucent electrodes 160k is made equal to the pitch of the light-emitting elements 150 in the X-axis direction.

[0042] Since the n-type semiconductor layer 151 includes the light-emitting surface 151S, the translucent electrode 160k is electrically connected to the n-type semiconductor layer 151. Thereby, the n-type semiconductor layers 151 of the arranged plurality of light-emitting elements 150 are electrically connected to each other along the Y-axis direction.

[0043] A surface resin layer 170 is provided on the insulating film 156 and the translucent electrode 160k. The surface resin layer 170 covers the light-emitting surface 151S. The surface resin layer 170 is a transparent resin, which protects the insulating film 156 and the translucent electrode 160k and provides a planarized surface for adhering the color filter 180.

[0044] The sub-pixel 20 includes a color filter (wavelength conversion member) 180. The color filter 180 is provided on the surface resin layer 170 via a transparent thin film adhesive layer 188. The transparent thin film adhesive layer 188 is provided for adhering the surface resin layer 170 and the color filter 180.

[0045] The color filter 180 includes a light-shielding portion 181 and a color conversion portion 182. The color conversion portion 182 is provided directly above the light-emitting surface 151S of the light-emitting element 150 according to the shape of the light-emitting surface 151S. In the color filter 180, the portion other than the color conversion portion 182 is the light-shielding portion 181. The light-shielding portion 181 is a so-called black matrix, which reduces blurring due to color mixing of light emitted from adjacent color conversion portions 182 and enables a sharp image to be displayed.

[0046] The color conversion portion 182 is one layer or two or more layers. FIGS. 3A and 3B show the case where the color conversion portion 182 is two layers. Whether the color conversion portion 182 is one layer or two layers is determined by the color of the light emitted by the sub-pixel 20, that is, the wavelength. When the emission color of the sub-pixel 20 is red, preferably, the color conversion portion 182 is two layers including a color conversion layer 183 and a filter layer 184 that passes red light. When the emission color of the sub-pixel 20 is green, preferably, the color conversion portion 182 is two layers including a color conversion layer 183 and a filter layer 184 that passes green light. When the emission color of the sub-pixel 20 is blue, preferably, it is one layer.

[0047] When the color conversion portion 182 is two layers, the first layer is the color conversion layer 183 and the second layer is the filter layer 184. The first color conversion layer 183 is provided closer to the light-emitting element 150. The filter layer 184 is laminated on the color conversion layer 183.

[0048] The color conversion layer 183 converts the wavelength of the light emitted by the light emitting element 150 into a desired wavelength. In the case of the sub-pixel 20 that emits red light, for example, light with a wavelength of 467 nm ± 30 nm, which is the wavelength of the light emitting element 150, is converted into light with a wavelength of about 630 nm ± 20 nm. In the case of the sub-pixel 20 that emits green light, for example, light with a wavelength of 467 nm ± 30 nm, which is the wavelength of the light emitting element 150, is converted into light with a wavelength of about 532 nm ± 20 nm.

[0049] The filter layer 184 blocks the wavelength component of the blue light that remains without being color-converted by the color conversion layer 183.

[0050] When the color of the light emitted by the sub-pixel 20 is blue, it may pass through the color conversion layer 183 or may be output as it is without passing through the color conversion layer 183. When the wavelength of the light emitted by the light emitting element 150 is about 467 nm ± 30 nm, the light may be output without passing through the color conversion layer 183. When the wavelength of the light emitted by the light emitting element 150 is 410 nm ± 30 nm, it is preferable to provide one layer of the color conversion layer 183 in order to convert the wavelength of the output light to about 467 nm ± 30 nm.

[0051] Even in the case of the blue sub-pixel 20, the sub-pixel 20 may have the filter layer 184. By providing the filter layer 184 that allows blue light to pass through the blue sub-pixel 20, minute external light reflection other than the blue light generated on the surface of the light emitting element 150 is suppressed.

[0052] As shown in FIG. 4A, the wiring 110a is provided on the first surface 103a of the substrate 100. An insulating layer 112 is provided on the wiring 110a. A part of the insulating layer 112 on the wiring 110a is removed, and an anisotropic conductive member (first anisotropic conductive member) 30 is provided at the location where the insulating layer 112 is removed. The anisotropic conductive member 30 is an anisotropic conductive paste or an anisotropic conductive film.

[0053] In this specification, the anisotropic conductive member shall include an anisotropic conductive paste (ACP) and an anisotropic conductive film (ACF). In this embodiment and other embodiments described later, when referring to the anisotropic conductive member, it can be used without distinguishing between ACP or ACF. Note that in the description of the manufacturing method and the like described later, when using ACP, it may be described as applying the anisotropic conductive member, and when using ACF, it may be described as attaching the anisotropic conductive member.

[0054] The anisotropic conductive member 30 includes a binder 31 and anisotropic conductive particles 32. The binder 31 functions as an adhesive that fixes the opposing wiring 110a and the first terminal 34. The anisotropic conductive particles 32 are uniformly dispersed in the binder 31 and electrically connect the wiring 110a to which pressure is applied and the first terminal 34. The anisotropic conductive particles 32 electrically connect between the wiring 110a and the first terminal 34 provided in the Z-axis direction of the wiring 110a, but do not electrically connect between conductors in other directions. For example, parallel wirings 110a are provided adjacent to the wiring 110a, and even if anisotropic conductive particles 32 exist between the two wirings 110a, the two wirings 110a are not electrically connected.

[0055] As shown in FIG. 4B, the second terminal 44 is provided on the substrate 100 via the insulating film 156, the light-transmitting electrode 160k, and the anisotropic conductive member 40. The second terminal 44 is electrically connected to the light-transmitting electrode 160k via the anisotropic conductive member (second anisotropic conductive member) 40.

[0056] The anisotropic conductive member 40 includes a binder 41 and anisotropic conductive particles 42. The binder 41 functions as an adhesive for fixing the opposing translucent electrodes 160k and the second terminal 44. The anisotropic conductive particles 42 are uniformly dispersed in the binder 41 and electrically connect the opposing translucent electrodes 160k and the second terminal 44. The anisotropic conductive particles 42 also exhibit the same function as the anisotropic conductive particles 32. The anisotropic conductive particles 42 electrically connect between the translucent electrode 160k and the second terminal 44 provided in the Z-axis direction of the translucent electrode 160k, but do not electrically connect between conductors in other directions.

[0057] In the row wiring region 6 shown in FIG. 1, the end of the wiring extending from the row selection circuit 5 serves as the first terminal 34 and is electrically connected to the wiring 110a provided in the display region 2. Therefore, in the light-emitting elements 150 arranged on the wiring 110a, the p-type semiconductor layers 153 are connected to each other and are electrically connected to the row selection circuit 5 shown in FIG. 1 via the first terminal 34.

[0058] In the column wiring region 8 shown in FIG. 1, the end of the wiring extending from the current drive circuit 7 serves as the second terminal 44 and is electrically connected to the translucent electrode 160k provided in the display region 2. Therefore, in the light-emitting elements 150 arranged in the Y-axis direction, the n-type semiconductor layers 151 are connected to each other by the translucent electrode 160k and are electrically connected to the current drive circuit 7 shown in FIG. 1 via the second terminal 44.

[0059] The connector 106 shown in FIG. 1 is electrically connected to the row selection circuit 5 and the current drive circuit 7 via wiring (not shown) formed on the first surface 103a. The row selection circuit 5 and the current drive circuit 7 are supplied with power from the connector and supplied with various signals including a row selection signal, a luminance signal, and the like.

[0060] FIG. 5 is a schematic block diagram illustrating the image display device of the present embodiment. FIG. 5 shows a part of the circuit configuration of the image display device 1, and schematically shows the circuit configuration of the portion corresponding to the a portion of FIG. 1. Further, FIG. 5 also shows the connection relationship between the row selection circuit 5 and the circuit elements of the a portion and the connection relationship between the current drive circuit 7 and the circuit elements of the a portion.

[0061] The wiring 110a is provided along the row direction, and the light-transmissive electrode 160k is provided along the column direction. In FIGS. 1 and 2, the row direction is the X-axis direction, and the column direction is the Y-axis direction. In the description of FIG. 5, the three wirings 110a are called the Nth row, the N + 1th row, and the N + 2th row from top to bottom, and the three light-transmissive electrodes 160k are called the Mth column, the M + 1th column, and the M + 2th column from right to left. When viewed from the row selection circuit 5, the light-transmissive electrode 160k of the Mth column is arranged at the closest position, and the light-transmissive electrode 160k of the M + 2th column is arranged at the farthest position. When viewed from the current drive circuit 7, the wiring 110a of the Nth row is arranged at the closest position, and the wiring 110a of the N + 2th row is arranged at the farthest position.

[0062] The row selection circuit 5 is connected to a DC power supply 9 via a power supply terminal 9a and a ground terminal 9b. A voltage sufficiently higher than the ground terminal 9b is applied to the power supply terminal 9a by the DC power supply 9. The row selection circuit 5 includes row selection switches 5a corresponding to the number of the wirings 110a, and each row selection switch 5a is connected to the wiring 110a via a first terminal 34. The row selection switch 5a is connected to the ground terminal 9b side in the initial state, and is connected to the power supply terminal 9a side according to a row selection signal supplied from a control circuit (not shown).

[0063] The current drive circuit 7 includes current sources 7a corresponding to the number of the light-transmissive electrodes 160k, and each current source 7a is connected to the light-transmissive electrode 160k via a terminal 44. The current source 7a operates to output a current having a set current value according to a luminance signal supplied from a control circuit (not shown).

[0064] The light-emitting element 150 is formed at the intersection of the wiring 110a and the translucent electrode 160k. In FIG. 5, the light-emitting element 150 is represented by the circuit symbol of a diode. The light-emitting element 150 conducts current when the voltage value of the wiring 110a is higher than the voltage value of the translucent electrode 160k by more than the forward voltage drop of the light-emitting element 150.

[0065] For example, when the row selection switches 5a of N rows are connected to the power supply terminal 9a side, current flows through the light-emitting elements 150 in each column of the N rows. At this time, since the row selection switches 5a other than the N rows are connected to the ground terminal 9b side, the current of the light-emitting elements 150 other than the N rows is cut off.

[0066] Since the light-emitting elements 150 are arranged on a two-dimensional plane, the wiring 110a connected to the row selection circuit 5 has a resistance component corresponding to its length. Therefore, the voltage that can be applied to the light-emitting elements 150 in the columns located far from the row selection circuit 5 causes a voltage drop due to the resistance component corresponding to the length of the wiring 110a. In order to overcome the voltage drop caused by the wiring 110a, it is conceivable to increase the voltage value output by the DC power supply 9, but the power loss of the image display device 1 increases. Therefore, it is preferable to suppress the resistance component of the wiring 110a as much as possible.

[0067] FIG. 6 is an example of a schematic operation waveform diagram for explaining the operation of the image display device of the present embodiment. FIG. 6 shows the time changes of the signals and voltage values at six locations in the circuit of FIG. 5. The topmost diagram in FIG. 6 shows the time change of the output signal of the first terminal 34 of the Nth row of the row selection circuit 5. The second diagram from the top in FIG. 6 shows the time change of the voltage value of the translucent electrode 160k of the Mth column. The third diagram from the top in FIG. 6 shows the time change of the voltage value on the Mth column side of the wiring 110a of the Nth row. The fourth diagram from the top in FIG. 6 shows the time change of the voltage value of the translucent electrode 160k of the (M + 2)th column. The fifth diagram from the top in FIG. 6 shows the time change of the voltage value on the (M + 2)th column side of the wiring 110a of the Nth row. The bottom diagram in FIG. 6 shows the time variation of the output signal of the first terminal 34 of the (N + 1)-th row of the row selection circuit 5. In FIG. 6, it shows that in period T1, the wiring 110a of the N-th row is selected, and in period T2, the wiring 110a of the (N + 1)-th row is selected.

[0068] As shown in FIG. 6, when the period T1 for selecting the N-th row starts at time t1, with a slight delay, at time t2, the row selection switch 5a of the N-th row is connected to the power supply terminal 9a side, and the voltage of the DC power supply 9 is output from the first terminal 34.

[0069] From time t1 to t2, all the light-emitting elements 150 including the M-th column to the (M + 2)-th column are in a reverse bias state by the current source 7a. During this period, the parasitic capacitance Cc formed between the transmissive electrode 160k and the ground is pre-charged. In this example, the pre-charge period is provided before and after the switching timing of the row selection, and the period from time t3 to time t5 is also set as the pre-charge period. Similarly, the pre-charge period is set before time t2 and after time t6. Also, the voltage between the transmissive electrode 160k of the M-th column and the ground during pre-charge is Vp1, and the voltage between the transmissive electrode 160k of the (M + 2)-th column and the ground is Vp2. In this example, a higher value than Vp1 is applied as the pre-charge voltage to the parasitic capacitance Cc for Vp2.

[0070] At time t2, when the row selection switch 5a of the N-th row switches to the power supply terminal 9a side, the light-emitting elements 150 with anodes connected to the N-th row have currents set by the current sources 7a connected to their respective cathodes flowing through them, and emit light with luminance corresponding to the current.

[0071] At time t3, when the selection of the N-th row of the row selection circuit 5 ends, the light-emitting elements 150 that were in a forward bias state return to a reverse bias state again, and the pre-charge of the parasitic capacitance Cc starts.

[0072] At time t4, the selection period of the (N + 1)-th row starts. After passing through the pre-charge period, at time t5, the row selection circuit 5 outputs the voltage of the DC power supply 9 from the terminals of the (N + 1)-th row. Similar to the case of period T1, the (N + 1)-th row is selected until time t6, and the voltage of the wiring 110a connected to the (N + 1)-th row rises. When the voltage of the wiring 110a reaches a value corresponding to the voltage drop of the transmissive electrode 160k and the forward voltage drop of the light-emitting element 150, a current flows through the light-emitting element 150 connected to the (N + 1)-th row and emits light with a luminance corresponding to the current set by the current source 7a.

[0073] Here, in the wiring 110a, a voltage drop due to the resistance generated according to the wiring length occurs along the direction in which the wiring 110a is routed. Therefore, the voltage drop occurs according to the resistance component corresponding to the current value set by the current source 7a and the length of the routed wiring. In this example, the waveforms of two columns, the M-th column and the (M + 2)-th column, within the a portion are shown. However, for the light-emitting elements 150 provided in columns further away from the row selection circuit 5 outside the a portion, the voltage that can be applied to the anode decreases.

[0074] Similarly, for the transmissive electrode 160k, a voltage drop due to the resistance component corresponding to the wiring length occurs along the direction in which the transmissive electrode 160k is routed.

[0075] During the period from time t2 to time t3, it shows that the voltage drop of the transmissive electrode 160k in the (M + 2)-th column is lower by ΔV1 than the voltage drop of the transmissive electrode 160k in the M-th column. During this period, for the wiring of the N-th row as well, the voltage on the (M + 2)-th column side is lower by ΔV2 than the voltage on the M-th column side. ΔV2 indicates the voltage drop that occurs as the wiring 110a moves away from the row selection circuit.

[0076] Also, it shows that the voltage Vp2 during pre-charge of the "wiring voltage of the (M + 2)-th column" in FIG. 5 needs to be set sufficiently higher than the voltage drop ΔV1 due to the resistance of the transmissive electrode 160k. If the voltage drop ΔV1 can be made sufficiently low, the voltage during pre-charge can also be made low, and it becomes possible to suppress power consumption.

[0077] Also in the period T2 including the time t4 to the time t7, each row is selected in the same manner as described above, and in the wiring 110a and the translucent electrode 160k of the selected row, a voltage drop corresponding to the separation distance from the row selection circuit 5 occurs. Therefore, by reducing the resistance component in the wiring direction of the wiring 110a, the voltage that can be applied to the light-emitting element 150 in the column provided at a position far from the row selection circuit 5 can be made sufficiently high.

[0078] A method for manufacturing the image display device 1 of the present embodiment will be described. FIGS. 7A to 7B are schematic cross-sectional views illustrating a part of the method for manufacturing the image display device of the present embodiment. As shown in FIG. 7A, in the method for manufacturing the image display device 1 of the present embodiment, a semiconductor growth substrate (second substrate) 1194 is prepared. The semiconductor growth substrate 1194 includes a crystal growth substrate 1001 and a semiconductor layer 1150. The crystal growth substrate (first substrate) 1001 is, for example, a Si substrate, a sapphire substrate, or the like. Preferably, a Si substrate is used as the crystal growth substrate 1001. Also, by using a low-temperature crystal growth process such as a low-temperature sputtering method, a less expensive glass substrate or the like can also be used as the crystal growth substrate 1001.

[0079] The semiconductor layer 1150 is formed on the crystal growth substrate 1001. The semiconductor layer 1150 includes an n-type semiconductor layer 1151, a light-emitting layer 1152, and a p-type semiconductor layer 1153. The n-type semiconductor layer 1151, the light-emitting layer 1152, and the p-type semiconductor layer 1153 are laminated in this order from the side of the crystal growth substrate 1001. The semiconductor layer 1150 contains, for example, GaN, and more specifically, In X Al Y Ga 1-X-Y N (0≦X, 0≦Y, X + Y <1), etc.

[0080] For the formation of the semiconductor layer 1150, for example, a chemical vapor deposition (CVD) method is used, and a metal organic chemical vapor deposition (MOCVD) method is preferably used. According to the low-temperature sputtering method, even when the process temperature is 700 °C or lower, the semiconductor layer 1150 can be epitaxially grown. In the low-temperature sputtering method, a glass substrate or device with low heat resistance can be used, so that the manufacturing cost can be reduced.

[0081] In this example, it is formed on the crystal growth substrate 1001 from the n-type semiconductor layer 1151. At the initial stage of crystal growth, crystal defects may occur due to the mismatch of the crystal lattice constant, and the crystal with crystal defects exhibits an n-type. Therefore, when the semiconductor layer 1150 is formed from the n-type semiconductor layer 1151 on the crystal growth substrate 1001 as in this example, a large margin in the production process can be obtained, so there is an advantage that the yield is easily improved.

[0082] Although not shown in the figure, when forming the semiconductor layer 1150 on the crystal growth substrate 1001, the semiconductor layer 1150 may be formed via a buffer layer. For the buffer layer, nitrides such as AlN are used, for example. By growing the semiconductor layer 1150 on the crystal growth substrate 1001 via the buffer layer, the mismatch at the interface between the GaN crystal and the crystal growth substrate 1001 can be relaxed. Therefore, it is expected that the quality of the semiconductor crystal of the semiconductor layer 1150 will be improved. On the other hand, in the present embodiment, since the p-type semiconductor layer 1153 is bonded to the first surface 103a shown in FIG. 10A described later, a step of removing the buffer layer is added before bonding. The same applies to other embodiments described later.

[0083] As shown in FIG. 7B, a metal layer 1115 is formed on the p-type semiconductor layer 1153. The metal layer 1115 is formed of, for example, Al, an alloy of Al, a laminated film of Al and Ti, etc. Preferably, a metal material with high light reflectivity such as Ag is provided on a metal layer such as Al.

[0084] FIG. 8A is a schematic plan view illustrating a part of a method of manufacturing an image display device according to the present embodiment. FIG. 8B is a schematic cross-sectional view illustrating a part of a method of manufacturing an image display device according to the present embodiment. FIG. 8A is an enlarged plan view of a portion a in FIG. 1, and FIG. 8B is a cross-sectional view taken along line AA-AA' in FIG. 8A. As shown in FIGS. 8A and 8B, a substrate (third substrate) 100 is prepared. The substrate 100 includes a Si substrate 102 having oxide films 101 and 103 formed on both surfaces. Alternatively, the substrate 100 may be an insulating substrate such as glass. A plurality of wirings 110a are formed on the first surface 103a so as to be substantially parallel to each other along the X-axis direction (first direction). The interval in the Y-axis direction of the wirings 110a is set to be the pitch of the light-emitting elements 150. In the formation of the wirings 110a, a stacked film of Ti and Al is formed by sputtering or the like, and then a plurality of wirings 110a are formed by etching or the like. An insulating layer 112 is formed on the formed wirings 110a. The formed insulating layer 112 is removed at the location where the light-emitting elements are to be formed, and the wirings 110a are exposed. In this example, since the shape of the light-emitting element in plan view in the XY plane is circular, the insulating layer 112 is removed in a circular shape.

[0085] FIG. 9A is a schematic plan view illustrating a part of a method of manufacturing an image display device according to the present embodiment. FIG. 9B is a schematic cross-sectional view illustrating a part of a method of manufacturing an image display device according to the present embodiment. FIG. 9A is an enlarged plan view of a portion a in FIG. 1, and FIG. 9B is a cross-sectional view taken along line AA-AA' in FIG. 9A. As shown in FIGS. 9A and 9B, a metal layer 1114 is formed on the wirings 110a and the insulating layer 112. The metal layer 1114 is, for example, a stacked film of Ti, Pt, and Au, and is formed by sputtering or the like. After forming the stacked film of Ti, Pt, and Au, the surface of the stacked film is planarized by CMP (Chemical Mechanical Planarization) or the like.

[0086] Figures 10A and 10B are schematic cross-sectional views illustrating a part of a method of manufacturing an image display device according to the present embodiment. Figures 10A and 10B are cross-sectional views corresponding to the cross-section along line AA-AA' of FIG. 9A. As shown in FIG. 10A, a metal layer (second conductive layer) 1115 formed on a semiconductor growth substrate 1194 is arranged to face a metal layer (first conductive layer) 1114. By joining the metal layers 1114 and 1115 together, the two substrates are bonded.

[0087] In the process of bonding the substrates, for example, the substrates are heated and thermocompression bonded to bond the substrates together. Before bonding, the bonding surfaces of the respective substrates may be further planarized by CMP or the like, and then the bonding surfaces may be cleaned and adhered by plasma treatment in a vacuum.

[0088] As shown in FIG. 10B, after the two substrates are bonded together, the crystal growth substrate 1001 is removed by wet etching, laser lift-off, or the like.

[0089] The metal layer 1114 is provided on the first surface 103a, the wiring 110a, and the insulating layer 112 for the purpose of providing a planarized surface for wafer bonding. On the other hand, the formation of the metal layer 1115 can be omitted. By omitting the formation process of the metal layer 1115, the number of processes can be reduced.

[0090] Figures 11A to 11C are schematic cross-sectional views illustrating a part of a method of manufacturing an image display device according to the present embodiment. FIG. 11C is a cross-sectional view corresponding to the cross-section along line AA-AA' of FIG. 9A. In FIGS. 11A to 11C, an example is shown in which a semiconductor layer 1150 is formed from a p-type semiconductor layer 1153 on a crystal growth substrate 1001. Instead of the processes shown in FIGS. 7A and 7B described above, the processes shown in FIGS. 11A to 11C can be applied. As shown in FIG. 11A, a semiconductor growth substrate 1294 is prepared. The semiconductor growth substrate 1294 includes a crystal growth substrate 1001 and a semiconductor layer 1150. The semiconductor layer 1150 is formed on the crystal growth substrate 1001. The semiconductor layer 1150 is laminated in the order of a p-type semiconductor layer 1153, a light-emitting layer 1152, and an n-type semiconductor layer 1151 from the side of the crystal growth substrate 1001.

[0091] As shown in FIG. 11B, a support substrate 1190 is bonded to the exposed surface 1151E of the n-type semiconductor layer 1151 shown in FIG. 11A. The support substrate 1190 is formed of, for example, quartz glass, Si, or the like. Thereafter, the crystal growth substrate 1001 is removed by wet etching or laser lift-off.

[0092] As shown in FIG. 11C, in a substrate 1295, a metal layer 1115 is formed on the exposed surface 1153E of the p-type semiconductor layer 1153. The semiconductor layer 1150 is bonded to the substrate 100 via the metal layers 1115 and 1114. Specifically, the exposed surface 1153E of the p-type semiconductor layer 1153 exposed by removing the crystal growth substrate 1001 is disposed to face the metal layer 1114 via the metal layer 1115, and the p-type semiconductor layer 1153 is bonded to the metal layer 1114 via the metal layer 1115. As in the case of the other embodiments described above, the p-type semiconductor layer 1153 may be directly bonded to the metal layer 1114 without forming the metal layer 1115 on the exposed surface 1153E.

[0093] The process until the semiconductor growth substrate 1294 is formed and the process after the substrate 1295 is formed may be executed in the same plant or in different plants. For example, the substrate 1295 may be manufactured in a first plant, and the substrate 1295 may be carried into a second plant different from the first plant to execute a bonding process.

[0094] The method of bonding the semiconductor layer 1150 to the substrate 100 is not limited to the above, and the following method can also be used. That is, after the semiconductor layer 1150 is formed on the crystal growth substrate 1001, it is stored in a container. For example, in the container, the support substrate 1190 is mounted and stored. After storage, the semiconductor layer 1150 is taken out of the container and bonded to the substrate 100 on which the metal layer 1114 is formed. Further, the semiconductor layer 1150 is stored in the container without being mounted on the support substrate 1190. After storage, the semiconductor layer 1150 is taken out of the container and directly bonded to the substrate 100 on which the metal layer 1114 is formed.

[0095] When bonding the semiconductor layer 1150 to the substrate 100, there are cases where one semiconductor layer 1150 is bonded to one substrate 100 and where a plurality of semiconductor layers 1150 are bonded to one substrate 100. When bonding one semiconductor layer 1150 to one substrate 100, the size of the substrate 100 can be, for example, a rectangular shape or a square shape with a size of about several tens of millimeters square to 150 millimeters square. In this case, the semiconductor layer 1150 formed on the substrate 1195 can have a size corresponding to the size of the substrate 100.

[0096] When bonding a plurality of semiconductor layers 1150 to one substrate 100, for example, a substantially rectangular glass substrate with a size of about 1500 mm × 1800 mm can be used as the substrate 100. The semiconductor layer 1150 formed on the substrate 1195 has a rectangular shape or a square shape with a size of about several tens of millimeters square to 150 millimeters square, and in terms of wafer size, it can have a size of about 4 inches to 6 inches, for example. The size of the substrate 100 is appropriately selected according to the size of the image display device and the like.

[0097] FIG. 12 is a perspective view illustrating a method of manufacturing the image display device of the present embodiment. FIG. 12 schematically shows an example when a plurality of semiconductor layers 1150 are bonded to one substrate 100. The figure above the arrow in Fig. 12 shows that a plurality of semiconductor growth substrates 1194 are arranged in a lattice. The figure below the arrow in Fig. 12 shows that the substrate 100 with the metal layer 1114 formed thereon is arranged. Fig. 12 shows, by an arrow, that a plurality of semiconductor growth substrates 1194 arranged in a lattice are bonded to each other at the position of the two-dot chain line.

[0098] At the end and in the vicinity of the semiconductor layer 1150, the quality of the semiconductor crystal deteriorates, so it is necessary to pay attention not to form the light-emitting element 150 at the end and in the vicinity of the semiconductor layer 1150. As shown in Fig. 12, the end of the semiconductor layer 1150 is formed to substantially coincide with the end of the crystal growth substrate 1001. Therefore, the plurality of semiconductor growth substrates 1194 are arranged in a lattice, for example, as shown by the solid line in Fig. 12, so as to face the substrate 100 with as little gap as possible between adjacent semiconductor growth substrates 1194. The semiconductor layer 1150 is bonded onto the metal layer 1114 of the substrate 100 as shown by the two-dot chain line in Fig. 12.

[0099] When a plurality of semiconductor layers 1150 are bonded to one substrate 100, in a subsequent process, the substrate 100 with the plurality of semiconductor layers 1150 bonded thereto can be divided into image display devices having a quantity and size corresponding to the number of divisions. Since it is preferable that the end of the semiconductor layer 1150 where the quality of the semiconductor crystal deteriorates becomes the end of the display area, the division unit is preferably set to match the shape of the semiconductor growth substrate 1194.

[0100] Fig. 13A is a schematic plan view illustrating a part of the manufacturing method of the image display device according to the present embodiment. Fig. 13B is a schematic cross-sectional view illustrating a part of the manufacturing method of the image display device according to the present embodiment. Fig. 13A is an enlarged plan view of part a in Fig. 1, and Fig. 13B is a cross-sectional view taken along line AA-AA' in Fig. 13A. As shown in FIGS. 13A and 13B, the semiconductor layer 1150 shown in FIG. 10B is etched to form the light-emitting element 150. The light-emitting element 150 is processed into a frustum of a cone shape in this example. By forming the light-emitting element 150 into a frustum of a cone shape, when the insulating film 156 shown in FIGS. 14A and 14B described later is formed on the light-emitting element 150, the insulating film 156 can be sufficiently adhered to the side surface of the light-emitting element 150.

[0101] To form the light-emitting element 150 into a frustum of a cone shape, for example, an etching rate that is higher closer to the light-emitting surface 151S is selected. The etching rate is set to increase substantially linearly from the side of the bottom surface 153B toward the side of the light-emitting surface 151S. More specifically, for example, when exposing the resist mask pattern during dry etching, it is devised so that the resist mask pattern becomes gradually thinner toward its end. Thereby, during dry etching, it is possible to gradually retreat from the thin portion of the resist and increase the etching amount from the side of the bottom surface 153B toward the side of the light-emitting surface 151S. In this way, the frustum-shaped light-emitting element 150 can be formed.

[0102] The metal layer 1115 shown in FIG. 10B is etched to be processed into the bonding metal 115. The metal layer 1114 shown in FIG. 10B is etched to be processed into the bonding metal 114. Preferably, the metal layers 1114 and 1115 are continuously etched using the same mask, and the bonding metals 114 and 115 having the same outer peripheral shape in plan view in the XY plane are formed.

[0103] FIG. 14A is a schematic plan view illustrating a part of the method for manufacturing the image display device of the present embodiment. FIG. 14B is a schematic cross-sectional view illustrating a part of the method for manufacturing the image display device of the present embodiment. FIG. 14A is an enlarged plan view of the portion a in FIG. 1, and FIG. 14B is a cross-sectional view taken along the line AA-AA' in FIG. 14A. As shown in FIGS. 14A and 14B, the insulating film 156 is formed on the insulating layer 112 and the light-emitting element 150 so as to cover them. When the insulating film 156 is formed of SiO2 or the like, for example, it is formed by CVD, sputtering, or the like. A part of the insulating film 156 is removed so as to expose the light-emitting surface 151S. In this example, the opening 158 in which the light-emitting surface 151S is exposed is circular in a plan view in the XY plane.

[0104] FIG. 15A is a schematic plan view illustrating a part of the method for manufacturing the image display device according to the present embodiment. FIG. 15B is a schematic cross-sectional view illustrating a part of the method for manufacturing the image display device according to the present embodiment. FIG. 15A is an enlarged plan view of part a in FIG. 1, and FIG. 15B is a cross-sectional view taken along line AA-AA' in FIG. 15A. As shown in FIGS. 15A and 15B, the translucent electrode 160k is formed along the Y-axis direction (second direction) and is formed over the insulating film 156 and the light-emitting surface 151S. More specifically, for example, a conductive film having translucency such as ITO or ZnO is formed so as to cover the insulating film 156 and the light-emitting surface 151S. A mask is formed on the conductive film, and the translucent electrode 160k is formed so as to electrically connect the light-emitting surfaces 151S of the light-emitting elements 150 arranged along the Y-axis direction to each other. Note that before forming the translucent electrode 160k, the surface of the opening 158 in which the light-emitting surface 151S is exposed can be roughened to improve the light extraction efficiency from the light-emitting element 150.

[0105] FIGS. 16A to 17B are schematic cross-sectional views illustrating a part of the method for manufacturing the image display device according to the present embodiment. FIGS. 16A and 16B show a cross-sectional view taken along line B-B' of part b in FIG. 2, and illustrate a step of electrically connecting the wiring 110a and the first terminal 34. FIGS. 17A and 17B show a cross-sectional view taken along line C-C' of part c in FIG. 2, and illustrate a step of electrically connecting the translucent electrode 160k and the second terminal 44. The first terminal 34 is at the end of the output wiring of the row selection circuit 5, and the second terminal 44 is at the end of the output wiring of the current drive circuit 7.

[0106] As shown in FIG. 16A, the wiring 110a is covered with an insulating layer 112, and a part of the insulating layer 112 is removed to expose the wiring 110a. The region where the wiring 110a is exposed is the connection region 36 shown in FIG. 2.

[0107] An anisotropic conductive member 30a is formed in a region including the connection region 36 shown in FIG. 2. The step of forming the anisotropic conductive member 30a is to apply the anisotropic conductive member 30a to the region including the connection region 36 or attach it to the region including the connection region 36. For example, the region where the anisotropic conductive member 30a is formed is a region that continuously includes the connection regions 36 arranged in the Y-axis direction in FIG. 2. That is, the anisotropic conductive member 30a is also provided in the region between adjacent connection regions 36.

[0108] The first terminal 34 is arranged to face the wiring 110a in the connection region 36 via the anisotropic conductive member 30a and is placed on the anisotropic conductive member 30a as shown by the arrow in FIG. 16A. The anisotropic conductive member 30a includes a binder 31a and anisotropic conductive particles 32a. Since no pressure is applied and no heating is performed on the binder 31a and the anisotropic conductive particles 32a, they are in an initial state. In the initial state, the binder 31a has fluidity and adhesiveness and does not exhibit adhesive force. In the initial state, the anisotropic conductive particles 32a do not conduct in any direction.

[0109] As shown in FIG. 16B, pressure is applied between the first terminal 34 and the substrate 100. The direction of the applied pressure is along the Z-axis as shown by the arrow in FIG. 16B. The first terminal 34, the substrate 100, and the anisotropic conductive member 30 are heated to a predetermined temperature while pressure is applied in the direction of the arrow. In the anisotropic conductive member 30, the anisotropic conductive particles 32 compressed in the pressure application direction form a conduction path in the pressure application direction. The binder 31 cured by heating fixes the wiring 110a and the first terminal 34 in an electrically connected state.

[0110] As shown in FIG. 17A, the translucent electrode 160k is formed on the insulating film 156. The anisotropic conductive member 40a is formed on the translucent electrode 160k. The region where the anisotropic conductive member 40a is formed is the region including the connection region 46 shown in FIG. 2. More specifically, the region where the anisotropic conductive member 40a is formed is the region continuously including the connection region 46 arranged in the X-axis direction in FIG. 2. That is, the anisotropic conductive member 40a is also provided in the connection region 46 and the region between the adjacent connection regions 46. The step of forming the anisotropic conductive member 40a is to apply the anisotropic conductive member 40a to the region including the connection region 46 or attach it to the region including the connection region 46.

[0111] The second terminal 44 is arranged to face the translucent electrode 160k at the connection region 46 shown in FIG. 2 via the anisotropic conductive member 40a and is placed on the anisotropic conductive member 40a as shown by the arrow in FIG. 17A. The anisotropic conductive member 40a includes a binder 41a and anisotropic conductive particles 42a. Since no pressure is applied and no heating is performed on the binder 41a and the anisotropic conductive particles 42a, they are in an initial state. In the initial state, the binder 41a has fluidity and adhesiveness and does not exhibit adhesive force. In the initial state, the anisotropic conductive particles 42a do not conduct in any direction.

[0112] As shown in FIG. 17B, pressure is applied between the second terminal 44 and the substrate 100. The direction of the applied pressure is along the Z-axis as shown by the arrow in FIG. 17B. The second terminal 44, the substrate 100, and the anisotropic conductive member 40a shown in FIG. 17A are heated to a predetermined temperature while pressure is applied. In the anisotropic conductive member 40 shown in FIG. 17B, the anisotropic conductive particles 42 compressed in the pressure application direction form a conduction path in the pressure application direction. The binder 41 cured by heating fixes the translucent electrode 160k and the second terminal 44 in an electrically connected state.

[0113] The electrical connection process between the wiring 110a and the first terminal 34 may be performed simultaneously with the electrical connection process between the light-transmitting electrode 160k and the second terminal 44, or may be performed sequentially.

[0114] FIG. 18 is a schematic cross-sectional view illustrating a part of the method for manufacturing the image display device according to the present embodiment. In the description related to FIG. 18, a structure including the wiring 110a, the insulating layer 112, the light-emitting element 150, the insulating film 156, the light-transmitting electrode 160k, and the surface resin layer 170 is referred to as the light-emitting circuit portion 172. In the description related to FIGS. 19A to 19D, a structure including the substrate 100 and the light-emitting circuit portion 172 is referred to as the structure 1192.

[0115] As shown in FIG. 18, the color filter (wavelength conversion member) 180 is formed on the structure 1192 on which a plurality of light-emitting elements 150 are formed. The color filter 180 is adhered to the structure 1192 on one surface. The other surface of the color filter 180 is adhered to the glass substrate 186. A transparent thin film adhesive layer 188 is provided on one surface of the color filter 180, and is adhered to the exposed surface of the surface resin layer 170 of the structure 1192 via the transparent thin film adhesive layer 188.

[0116] In this example, in the color filter 180, the color conversion portions are arranged in the positive direction of the X axis in the order of red, green, and blue. For red, a red color conversion layer 183R is provided in the first layer, for green, a green color conversion layer 183G is provided in the first layer, and a filter layer 184 is provided in the second layer for both. For blue, a single-layer color conversion layer 183B may be provided, or a filter layer 184 may be provided. A light-shielding portion 181 is provided between the respective color conversion portions, and it goes without saying that the frequency characteristics of the filter layer 184 can be changed for each color of the color conversion portion.

[0117] The color filter 180 is attached to the structure 1192 with the positions of the color conversion layers 183R, 183G, and 183B of each color aligned with the positions of the light-emitting elements 150.

[0118] Figs. 19A to 19D are schematic cross-sectional views showing a modified example of a method for manufacturing an image display device according to the present embodiment. Figs. 19A to 19D show a method of forming a color filter by an inkjet method.

[0119] As shown in Fig. 19A, a structure 1192 in which components such as a light-emitting element 150 are formed on a substrate 100 is prepared.

[0120] As shown in Fig. 19B, a light-shielding portion 181 is formed on the structure 1192. The light-shielding portion 181 is formed using, for example, screen printing, photolithography technology, or the like.

[0121] As shown in Fig. 19C, a phosphor corresponding to the emission color is ejected from an inkjet nozzle to form a color conversion layer 183. The phosphor colors the region where the light-shielding portion 181 is not formed. As the phosphor, for example, a fluorescent paint using a general phosphor material, a perovskite phosphor material, or a quantum dot phosphor material is used. When a perovskite phosphor material or a quantum dot phosphor material is used, it is preferable because each emission color can be realized, the monochromaticity is high, and the color reproducibility can be improved. After drawing by the inkjet nozzle, a drying process is performed at an appropriate temperature and time. The thickness of the coating film during coloring is set to be thinner than the thickness of the light-shielding portion 181.

[0122] As already described, for the blue-emitting sub-pixel, when the color conversion portion is not formed, the color conversion layer 183 is not formed. Further, for the blue-emitting sub-pixel, when forming a blue color conversion layer and when the color conversion portion may be one layer, preferably, the thickness of the coating film of the blue phosphor is set to be approximately the same as the thickness of the light-shielding portion 181.

[0123] As shown in Fig. 19D, the paint for the filter layer 184 is ejected from an inkjet nozzle. The paint is applied over the coating film of the phosphor. The total thickness of the coating films of the phosphor and the paint is set to be approximately the same as the thickness of the light-shielding portion 181.

[0124] Whether it is a film-type color filter or an inkjet-type color filter, in order to improve the color conversion efficiency, it is desirable that the color conversion layer 183 be as thick as possible. On the other hand, if the color conversion layer 183 is too thick, the emitted light of the color-converted light is approximated to Lambertian, while the non-color-converted blue light has its emission angle restricted by the light-shielding portion 181. Therefore, there arises a problem that the display color of the display image has viewing angle dependence. In order to match the light distribution of the non-color-converted blue light with the light distribution of the light of the sub-pixel provided with the color conversion layer 183, it is desirable that the thickness of the color conversion layer 183 be about half of the opening size of the light-shielding portion 181.

[0125] For example, in the case of a high-definition image display device of about 1000 ppi, since the opening of the sub-pixel 20 is about 10 μm, the thickness of the color conversion layer 183 is desirably about 5 μm. Here, when the color conversion material is composed of spherical phosphor particles, in order to suppress light leakage from the light-emitting element 150, it is preferably laminated in a close-packed structure. For that purpose, at least the layer of particles needs to be three layers. Therefore, the particle diameter of the phosphor material constituting the color conversion layer 183 is preferably about 2 μm or less, and more preferably about 1 μm or less.

[0126] The effect of the image display device 1 of this embodiment will be described. The image display device 1 of this embodiment has a passive matrix structure in which the light-emitting element 150 is driven by the wiring 110a and the translucent electrode 160k provided so as to intersect above and below the light-emitting element 150. Therefore, in order to drive the light-emitting element 150, circuit elements such as transistors are not required, so that the pixel pitch, which is the distance between the light-emitting elements 150, can be shortened.

[0127] For example, by setting the pixel pitch to about 10 μm, a very high-definition panel with about 1000 ppi can be realized in an image display device with a size of 3 to 4 inches. In recent years, the functions and performance of virtual reality goggles have been improving, and by realizing such a high-definition panel, it becomes possible to realize a product with higher functions and performance.

[0128] In the image display device 1 of this embodiment, by adopting a passive matrix structure, it is not necessary to form active elements such as transistors on the substrate, so a low-cost solar grade Si substrate can be used as the substrate 100. Alternatively, since a high-temperature process such as a TFT formation process is not required, a glass substrate can also be used. In either case, it is possible to reduce the cost compared to a display with an active matrix structure.

[0129] In the image display device 1 of this embodiment, the wiring 110a driven by the row selection circuit 5 can use a metal material with high conductivity. Therefore, the voltage drop in the wiring 110a can be suppressed, so the voltage value of the DC power supply for driving the light-emitting element 150 can be kept low, and the power consumption of the image display device 1 can be reduced. If the power consumption of the image display device 1 is allowed to a certain extent, it is possible to increase the panel size without increasing the voltage value of the DC power supply for driving the light-emitting element 150.

[0130] In the image display device 1 of this embodiment, the wiring 110a is electrically connected to the first terminal 34, which is the wiring from the row selection circuit 5, by an anisotropic conductive member 30 such as ACP or ACF. Also, the translucent electrode 160k can be electrically connected to the second terminal 44, which is the wiring from the current drive circuit 7, by the anisotropic conductive member 40. By using anisotropic conductive particles with a diameter of about 1 μm to several μm or less, for example, the wiring with a pitch of about 10 μm sub-pixels can be connected with high precision.

[0131] In the image display device 1 of the present embodiment, bonding metals 114 and 115 are provided between the bottom surface 153B of the light-emitting element 150 and the first wiring 110a. Since the bonding metals 114 and 115 can be made of a metal material with high light reflectivity, scattered light below the light-emitting element 150 can be reflected toward the light-emitting surface 151S side, and the substantial light-emitting efficiency of the light-emitting element 150 can be improved.

[0132] In the manufacturing method of the image display device 1 of the present embodiment, after the semiconductor layer 1150 is bonded to the substrate 100, the semiconductor layer 1150 is etched to form the light-emitting element 150. Therefore, since it is not necessary to transfer the light-emitting elements individualized on the substrate 100 individually, the manufacturing process is significantly shortened. For example, compared with the case of transferring onto the substrate as many times as the number of the individualized light-emitting elements, the number of times of transferring the light-emitting elements can be considered as the number of times of bonding the substrate in the manufacturing method of the present embodiment, and thus the number of processes corresponding to the number of times of transferring the light-emitting elements is reduced to one over the number of the light-emitting elements.

[0133] Furthermore, in the manufacturing method of the present embodiment, since the light-emitting element is formed after the semiconductor layer 1150 is bonded to the substrate 100 on which the wiring 110a is formed, alignment for connecting the light-emitting element according to the positions of the wiring and the electrodes becomes unnecessary. Therefore, the bonding process can be easily performed in a short time. Since it is not necessary to perform alignment during bonding, miniaturization of the light-emitting element 150 is also easy, and a high-definition display can be realized.

[0134] In the manufacturing method of the image display device 1 of the present embodiment, the electrical connection of the light-emitting element 150, the row selection circuit 5, and the current drive circuit 7 on the substrate 100 is performed by an anisotropic conductive member having fine anisotropic conductive particles. Therefore, connection with a short pitch can be performed accurately and easily. By using the connection method with the anisotropic conductive member, the electrical connection between the light-emitting element 150 and the row selection circuit 5 and the electrical connection between the light-emitting element 150 and the current drive circuit 7 can be performed simultaneously, and the manufacturing process can be reduced.

[0135] (Second Embodiment) In the above-described first embodiment, the light-emitting surface of the light-emitting element is provided by the n-type semiconductor layer. However, in this embodiment, the light-emitting surface of the light-emitting element is provided by the p-type semiconductor layer. In this embodiment, except that the configuration of the light-emitting element is different, it is the same as in the case of the other embodiments described above. The same reference numerals are assigned to the same components, and detailed descriptions are appropriately omitted. FIGS. 20A and 20B are schematic cross-sectional views illustrating a part of the image display device of this embodiment. FIG. 20A is a cross-sectional view corresponding to the cross-section along the line A-A' in FIG. 2. FIG. 20B is a cross-sectional view corresponding to the cross-section along the line AA-AA' in FIG. 2. As shown in FIGS. 20A and 20B, the pixel 210 includes three sub-pixels 220. The sub-pixel 220 includes a wiring 210k, a light-emitting element 250, and a light-transmissive electrode 260a. The wiring 210k is formed along the X-axis direction. The wiring layer 110 includes a plurality of wirings 210k. The plurality of wirings 210k are provided so as to be spaced apart in the Y-axis direction at substantially equal intervals and be substantially parallel to each other. The distance between adjacent wirings 210k is set in accordance with the pitch of the light-emitting element 250. The plurality of wirings 210k are connected to the row selection circuit 5 at the end of the display area 2 shown in FIG. 1.

[0136] The light-emitting element 250 is formed on the bonding metal 115, and the n-type semiconductor layer 251, the light-emitting layer 252, and the p-type semiconductor layer 253 are laminated in this order from the side of the bonding metal 115.

[0137] The light-emitting element 250 includes a bottom surface 251B and a light-emitting surface 253S. The bottom surface 251B is the surface connected to the bonding metal 115. The light-emitting surface 253S is the surface on the opposite side of the bottom surface 251B. Since the n-type semiconductor layer 251 includes the bottom surface 251B, the bonding metal 115 is electrically connected to the n-type semiconductor layer 251. The bonding metal 115 is ohmically connected to the n-type semiconductor layer 251.

[0138] Since the bonding metals 114 and 115 are connected to the wiring 210k, the n-type semiconductor layer 251 is electrically connected to the wiring 210k. The configuration, material, and function of the bonding metals 114 and 115 are the same as those in the first embodiment, and thus detailed description thereof is omitted.

[0139] The translucent electrode 260a is provided along the Y-axis direction and extends over the light-emitting surface 253S. The translucent wiring layer 160 includes a plurality of translucent electrodes 260a. The plurality of translucent electrodes 260a are provided at intervals in the X-axis direction and are substantially parallel to each other. Since the p-type semiconductor layer 253 includes the light-emitting surface 253S, the translucent electrode 260a is electrically connected to the p-type semiconductor layer 253. The plurality of translucent electrodes 260a are electrically connected to the current drive circuit 7 at the ends of the display area 2 shown in FIG. 1.

[0140] FIG. 21 is a schematic block diagram illustrating the image display device of the present embodiment. As shown in FIG. 21, in the image display device of the present embodiment, the configuration of the light-emitting element is different from that in the above-described other embodiments, and the polarity of the light-emitting element is different. The circuit configuration is changed according to the difference in the polarity of the light-emitting element. As shown in FIG. 21, the wiring 210k is provided along the row direction. The wiring 210k is connected to the row selection circuit 205 via the first terminal 34. The translucent electrode 260a is provided along the column direction. The translucent electrode 260a is connected to the current drive circuit 207 via the second terminal 44.

[0141] The row selection circuit 205 includes a row selection switch 205a, and the wiring 210k is connected to the row selection switch 205a via the first terminal 34. When selecting the row, the row selection switch 205a outputs the voltage of the power supply terminal 9a from the first terminal 34. When not selecting the row, the row selection switch 205a outputs the voltage of the power supply terminal 9a from the first terminal 34. A DC power supply 9 that supplies a DC voltage sufficiently higher than the voltage value of the power supply terminal 9a to the ground terminal 9b is connected to the power supply terminal 9a with reference to the voltage of the ground terminal 9b.

[0142] The current driving circuit 207 includes a current source 207a, and the translucent electrode 260a is connected to the current source 207a via the second terminal 44. The current source 207a operates to discharge current from the second terminal 44.

[0143] The anode of the light emitting element 250 is connected to the current source 207a via the second terminal 44, and the cathode of the light emitting element 250 is connected to the row selection switch 205a via the first terminal 34. When the row selection switch 205a is selected by an external control signal, the voltage of the power supply terminal 9b is output from the first terminal 34. Since the voltage value of the power supply terminal 9b is sufficiently lower than that of the ground terminal 9a, current flows through the light emitting element 250 connected to the wiring 210k of the selected row. The current flows through the path of the current source 207a, the second terminal 44, the anode of the light emitting element 250, the cathode of the light emitting element 250, the first terminal 34, and the row selection switch 205a.

[0144] A method for manufacturing the image display device of the present embodiment will be described. FIGS. 22A to 22C are schematic cross-sectional views illustrating a part of the method for manufacturing the image display device of the present embodiment. As shown in FIG. 22A, a semiconductor growth substrate 1194 is prepared. The semiconductor growth substrate 1194 is the same as that described in relation to FIG. 7A in the case of the other embodiments described above.

[0145] As shown in FIG. 22B, a support substrate 1190 is bonded to the p-type semiconductor layer 1153 of the semiconductor growth substrate 1194. Thereafter, the crystal growth substrate 1001 is removed to form a substrate 1195. For the removal of the crystal growth substrate 1001, wet etching or laser lift-off is used.

[0146] As shown in FIG. 22C, on the exposed surface 1153E of the p-type semiconductor layer 1153 of the substrate 1195, a metal layer 1115 is formed. The semiconductor layer 1150 is bonded to the substrate 100 via the metal layers 1115 and 1114. Thereafter, the support substrate 1190 is removed by wet etching or laser lift-off.

[0147] FIG. 23A is a schematic plan view illustrating a part of the manufacturing method of the image display device of the present embodiment. FIG. 23B is a schematic cross-sectional view illustrating a part of the manufacturing method of the image display device of the present embodiment. FIG. 23A is an enlarged plan view of a portion corresponding to the portion a in FIG. 1, and FIG. 23B is a cross-sectional view taken along the line AA-AA' in FIG. 23A. As shown in FIGS. 23A and 23B, the semiconductor layer 1150 shown in FIG. 22C is processed by etching to form a light-emitting element 250. The light-emitting element 250 is formed in a frustum shape with a diameter decreasing from the bottom surface 251B toward the light-emitting surface 253S by adjusting the etching rate, similar to the light-emitting element 150 in the case of the other embodiments described above. The metal layers 1114 and 1115 shown in FIG. 22C are processed by etching to form bonding metals 114 and 115.

[0148] FIG. 24A is a schematic plan view illustrating a part of the manufacturing method of the image display device of the present embodiment. FIG. 24B is a schematic cross-sectional view illustrating a part of the manufacturing method of the image display device of the present embodiment. FIG. 24A is an enlarged plan view of a portion corresponding to the portion a in FIG. 1, and FIG. 24B is a cross-sectional view taken along the line AA-AA' in FIG. 24A. As shown in FIGS. 24A and 24B, an insulating film 156 is formed on the insulating layer 112, the bonding metals 114 and 115, and the light-emitting element 250. When the insulating film 156 is SiO2, the insulating film 156 is formed by CVD, sputtering, or the like. A part of the insulating film 156 is removed so as to expose the light-emitting surface 253S. In this example, similar to the case of the other embodiments described above, the opening 158 exposing the light-emitting surface 253S is circular in plan view in the XY plane.

[0149] FIG. 25A is a schematic plan view illustrating a part of the method for manufacturing the image display device of the present embodiment. FIG. 25B is a schematic cross-sectional view illustrating a part of the method for manufacturing the image display device of the present embodiment. FIG. 25A is an enlarged plan view of a portion corresponding to part a of FIG. 1, and FIG. 25B is a cross-sectional view taken along line AA-AA' of FIG. 25A. As shown in FIGS. 25A and 25B, the light-transmissive electrode 260a is formed over the insulating film 156 and the light-emitting surface 253S. More specifically, for example, a conductive film having light-transmittance such as ITO is formed to cover the insulating film 156 and the light-emitting surface 253S. A mask along the Y-axis direction is formed over the conductive film, and the light-transmissive electrode 260a is formed so as to connect the light-emitting surfaces 253S of the light-emitting elements 250 arranged along the Y-axis direction to each other.

[0150] The effects of the image display device of the present embodiment will be described. In the image display device of the present embodiment, similar to the image display devices of the other embodiments described above, since it has a passive matrix structure that does not require circuit elements such as transistors, the pitch of the sub-pixels can be reduced. In addition, the p-type semiconductor layer 253 can be used as the light-emitting surface 253S, and the n-type semiconductor layer 251 can be used as the bottom surface 251B. Since the n-type semiconductor layer 251 can have a lower resistance value than the p-type semiconductor layer 253, the resistance values related to the light-emitting element 250 and the wiring 210k can be suppressed to be small. Therefore, there is an advantage that the resistance value on the side of the wiring 210k connected to the row selection circuit 205 shown in FIG. 21 can be suppressed.

[0151] In the method for manufacturing the image display device of the present embodiment, after the semiconductor layer 1150 is formed on the crystal growth substrate 1001 and transferred to the support substrate 1190, the p-type semiconductor layer 253 can be used as the light-emitting surface 253S. By adopting this manufacturing process, since the n-type semiconductor layer 1151 can be formed on the crystal growth substrate 1001, the quality and stability of the semiconductor crystal of the semiconductor layer 1150 can be improved, and the manufacturing yield can be improved.

[0152] (Third Embodiment) FIG. 26 is a schematic plan view illustrating a part of the image display device according to the present embodiment. FIG. 26 is an enlarged view of a portion corresponding to part a of the display area 2 shown in FIG. 1. As shown in FIG. 26, in the image display device of the present embodiment, a plurality of light emitting surfaces 351S1 to 351S3 are provided on a p-type semiconductor layer 353a formed on a first wiring 110a, which is different from the cases of the other embodiments described above. The same reference numerals are given to the same components, and detailed descriptions are omitted as appropriate.

[0153] In this example, one p-type semiconductor layer 353a has three light emitting surfaces 351S1 to 351S3, but it is not limited thereto, and one p-type semiconductor layer 353a may have two or more light emitting surfaces.

[0154] The p-type semiconductor layer 353a is provided on the wiring 110a. Although not shown in FIG. 26, a plurality of p-type semiconductor layers 353a can be provided on one wiring 110a. A plurality of p-type semiconductor layers 353a are provided in the X-axis direction and are arranged such that the intervals between the light emitting surfaces are substantially constant pitches when the light emitting surfaces are formed.

[0155] A plurality of wirings 110a are provided, and the plurality of wirings 110a are provided at intervals and substantially parallel to each other in the Y-axis direction. Therefore, the plurality of p-type semiconductor layers 353a are provided at intervals and substantially parallel to each other in the Y-axis direction. The interval in the Y-axis direction between the wiring 110a and the p-type semiconductor layer 353a is made substantially equal to the pitch of the light emitting surface.

[0156] FIGS. 27A and 27B are schematic cross-sectional views illustrating a part of the image display device of the present embodiment. FIG. 27A is a cross-sectional view taken along line A-A' of FIG. 26. FIG. 27B is a cross-sectional view taken along line AA-AA' of FIG. 26. As shown in FIGS. 27A and 27B, the pixel 310 of the present image display device includes three sub-pixels 320. In the following figures representing embodiments, the display of color filters is omitted to avoid display complexity. As described in the other embodiments above, the color filter is formed with a surface resin layer 170 on the insulating film 156 and the translucent electrode 160k, and the color filter is provided on the surface resin layer 170. Note that, including the case of the other embodiments described above, it is also possible to form a monochrome image display device without providing a color filter.

[0157] The sub-pixel 320 includes a substrate 100. The substrate 100 is the same as in the case of the other embodiments described above, and detailed description thereof is omitted.

[0158] A wiring layer 110 is provided on the first surface 103a, and the wiring layer 110 includes a plurality of wirings 110a. An insulating layer 112 is provided between two adjacent wirings 110a provided in parallel with the Y-axis direction on the first surface 103a.

[0159] Bonding metals 314 and 315 are provided on the wiring 110a. The bonding metals 314 and 315 are laminated in this order from the side of the first surface 103a. The bonding metals 314 and 315 are formed along the X-axis direction together with the first wiring 110a. A plurality of bonding metals 314 and 315 are provided, and the plurality of bonding metals 314 and 315 are provided at intervals and substantially parallel to each other in the Y-axis direction. The separation distance between the bonding metals 314 and 315 adjacent in the Y-axis direction is set to be the pitch of the light emitting surface. The bonding metals 314 and 315 can be formed of the same material as the bonding metals 114 and 115 in the case of the other embodiments described above and have the same functions.

[0160] The semiconductor layer 350 includes a p-type semiconductor layer 353a, first to third light-emitting layers 352a1 to 352a3, and first to third n-type semiconductor layers 351a1 to 351a3. The first to third light-emitting layers 352a1 to 352a3 are provided on the p-type semiconductor layer 350a. The first to third light-emitting layers 352a1 to 352a3 are separated from each other and spaced apart, and are provided on the p-type semiconductor layer 353a. The first n-type semiconductor layer 351a1 is provided on the first light-emitting layer 352a1. The second n-type semiconductor layer 351a2 is provided on the second light-emitting layer 352a2. The third n-type semiconductor layer 351a3 is provided on the third light-emitting layer 352a3. The first to third n-type semiconductor layers 351a1 to 351a3 are separated from each other and spaced apart, and are respectively provided on the first to third light-emitting layers 352a1 to 352a3.

[0161] The p-type semiconductor layer 353a is provided along the bonding metal 315 on the bonding metal 315. That is, the plurality of p-type semiconductor layers 353a are provided spaced apart in the Y-axis direction and substantially parallel to each other together with the wiring 110a and the bonding metals 314, 315. The bottom surface 353B is a part of the p-type semiconductor layer 353a, and the bottom surface 353B is in contact with the bonding metal 315. Therefore, the p-type semiconductor layer 353a is electrically connected to the bonding metal 315.

[0162] The arrangement of the first to third light-emitting layers 352a1 to 352a3 is provided spaced apart in the Y-axis direction and substantially parallel to each other together with the wiring 110a, the bonding metals 314, 315, and the p-type semiconductor layer 353a.

[0163] The first to third n-type semiconductor layers 351a1 to 351a3 are respectively provided on the first to third light-emitting layers 352a1 to 352a3. Therefore, the arrangement of the first to third n-type semiconductor layers 351a1 to 351a3 is also provided spaced apart in the Y-axis direction and substantially parallel to each other together with the wiring 110a, the bonding metals 314, 315, the p-type semiconductor layer 353a, and the arrangement of the first to third light-emitting layers 352a1 to 352a3.

[0164] The first n-type semiconductor layer 351a1 has a first light-emitting surface 351S1. The first light-emitting surface 351S1 is the surface on the opposite side of the surface of the first n-type semiconductor layer 351a1 that is in contact with the first light-emitting layer 352a1. The second n-type semiconductor layer 351a2 has a second light-emitting surface 351S2. The second light-emitting surface 351S2 is the surface on the opposite side of the surface of the second n-type semiconductor layer 351a2 that is in contact with the second light-emitting layer 352a2. The third n-type semiconductor layer 351a3 has a light-emitting surface 351S3. The third light-emitting surface 351S3 is the surface on the opposite side of the surface of the third n-type semiconductor layer 351a3 that is in contact with the third light-emitting layer 352a3. Therefore, the first light-emitting surface 351S1 to the third light-emitting surface 351S3 are arranged at substantially equal intervals along the X-axis direction. The arrangements of the plurality of first light-emitting surfaces 351S1 to the third light-emitting surfaces 351S3 are provided substantially parallel to each other with a gap in the Y-axis direction.

[0165] The insulating film 156 is provided to cover the insulating layer 112, the bonding metals 314, 315, the p-type semiconductor layer 353a, the first light-emitting layer 352a1 to the third light-emitting layer 352a3, and the first n-type semiconductor layer 351a1 to the third n-type semiconductor layer 351a3. A part of the insulating film 156 is removed to expose the first light-emitting surface 351S1 to the third light-emitting surface 351S3.

[0166] The light-transmissive wiring layer 160 is provided on the insulating film 156 and the first light-emitting surface 351S1 to the third light-emitting surface 351S3. The light-transmissive wiring layer 160 includes a plurality of light-transmissive electrodes 160k. The light-transmissive wiring layer 160 is provided over the arrangements of the first light-emitting surface 351S1 to the third light-emitting surface 351S3. The plurality of light-transmissive electrodes 160k are provided at intervals and substantially parallel to each other in the X-axis direction. The separation distance in the X-axis direction between adjacent light-transmissive electrodes 160k is substantially equal to the pitch of the light-emitting surfaces.

[0167] A method for manufacturing the image display device of the present embodiment will be described. FIGS. 28A to 29C are schematic cross-sectional views illustrating a part of the method for manufacturing the image display device of the present embodiment. FIGS. 29A to 29C are cross-sectional views corresponding to the cross-section taken along the line A-A' of FIG. 26. As shown in FIG. 28A, a wiring layer 110 is formed on the first surface 103a of the substrate 100, and a wiring 110a is formed. An insulating layer 112 is formed on the wiring layer 110 including the wiring 110a. The insulating layer 112 has a region removed where the semiconductor layer 350 is connected to the wiring 110a. A metal layer 1114 is formed on the insulating layer 112 and the wiring 110a, and preferably, the surface of the metal layer 1114 is planarized.

[0168] As shown in FIG. 28B, the semiconductor layer 1150 formed on the metal layer 1115 is attached to the metal layer 1114, thereby bonding the semiconductor layer 1150 to the substrate 100 via the metal layers 1115 and 1114. These steps can be performed in the same manner as in the case of the other embodiments described above.

[0169] As shown in FIG. 29A, the metal layers 1114 and 1115 shown in FIG. 28B are processed by etching to form bonding metals 314 and 315. The bonding metals 314 and 315 are shaped along the wiring 110a and are shaped into the same shape as the first wiring 110a in plan view in the XY plane.

[0170] The semiconductor layer 1150 shown in FIG. 28B is processed by etching to form the semiconductor layer 350 shown in FIG. 29A. In the process of forming the semiconductor layer 350, a p-type semiconductor layer 353a is shaped along the bonding metal 315 and is shaped into the same shape as the bonding metals 314 and 315 and the wiring 110a in plan view in the XY plane.

[0171] After forming the p-type semiconductor layer 353a, the first light-emitting layer 352a1 to the third light-emitting layer 352a3 and the first n-type semiconductor layer 351a1 to the third n-type semiconductor layer 351a3 are formed. The first light-emitting layer 352a1 and the first n-type semiconductor layer 351a1 are shaped into the same shape in plan view in the XY plane. The second light-emitting layer 352a2 and the second n-type semiconductor layer 351a2 are shaped into the same shape in plan view in the XY plane. The third light-emitting layer 352a3 and the third n-type semiconductor layer 351a3 are shaped into the same shape in plan view in the XY plane. The first n-type semiconductor layer 351a1 to the third n-type semiconductor layer 351a3 are formed simultaneously, and the first light-emitting layer 352a1 to the third light-emitting layer 352a3 are formed simultaneously. At this time, the p-type semiconductor layer 353a sandwiched between the first light-emitting layer 352a1 to the third light-emitting layer 352a3 may be partially or entirely etched away.

[0172] As shown in FIG. 29B, the insulating film 156 is provided to cover the insulating layer 112, the bonding metals 314, 315, and the semiconductor layer 350 shown in FIG. 29A. A part of the insulating film 156 on the first n-type semiconductor layer 351a1 to the third n-type semiconductor layer 351a3 is removed, and the first light-emitting surfaces 351S1 to the third light-emitting surfaces 351S3 are exposed.

[0173] As shown in FIG. 29C, the first light-transmissive wiring layer 160 is formed along the Y-axis direction. The first light-transmissive electrodes 160k are respectively formed on the first light-emitting surfaces 351S1 to the third light-emitting surfaces 351S3.

[0174] In this way, a pixel 310 including a plurality of sub-pixels 320 is formed.

[0175] The effects of the image display device of this embodiment will be described. In the image display device of this embodiment, similar to the image display devices of the other embodiments described above, since it has a passive matrix structure that does not require circuit elements such as transistors, the pitch of the first light-emitting surfaces 351S1 to the third light-emitting surfaces 351S3 can be shortened. In addition, in this embodiment, when forming the semiconductor layer 350, it is not necessary to divide each light-emitting element, so the manufacturing process may be shortened.

[0176] (Fourth Embodiment) Figs. 30A to 30C are schematic cross-sectional views illustrating a part of the image display device according to this embodiment. Fig. 30A is a cross-sectional view corresponding to the cross-section along line A-A' in Fig. 2. Fig. 30B is a cross-sectional view corresponding to the cross-section along line AA-AA' in Fig. 2. Fig. 30C is a cross-sectional view corresponding to the cross-section along line C-C' in Fig. 2. Note that the cross-section corresponding to the cross-section along line B-B' in Fig. 2 is the same as that shown in Fig. 4A of the other embodiments described above, so the illustration and detailed description are omitted. As shown in Figs. 30A and 30B, the image display device of this embodiment includes a plurality of sub-pixels 420. The sub-pixel 420 is different from the case of the other embodiments described above in that it includes an insulating film 156a. The same components are denoted by the same reference numerals, and detailed descriptions are appropriately omitted.

[0177] In this embodiment, the insulating film 156a covers the side surface of the light-emitting element 150 and is also provided between adjacent light-emitting elements 150. In this example, the height of the insulating film 156a from the first surface 103a between two adjacent light-emitting elements 150 is set higher than the height of the first surface 103a of the light-emitting surface 151S. The insulating film 156a is formed of a light-reflective material. The insulating film 156a is formed of, for example, a white resin. By using the white resin for the insulating film 156a, the light emitted in the lateral direction of the light-emitting element 150 can be reflected. Also, by making the height of the insulating film 156a from the first surface 103a between two adjacent light-emitting elements 150 higher than the height of the first surface 103a of the light-emitting surface 151S, the light that tends to spread laterally from the light-emitting surface 151S can be reflected. Thereby, the luminous efficiency of the light-emitting element 150 is substantially improved.

[0178] The white resin is formed by dispersing scattering fine particles having a Mie scattering effect in a transparent resin such as a silicon-based resin like SOG (Spin On Glass) or a novolak-type phenolic resin. The scattering fine particles are colorless or white and have a diameter ranging from about 1 / 10 to several times the wavelength of the light emitted by the light-emitting element 150. The scattering fine particles preferably used have a diameter of about 1 / 2 of the wavelength of the light. For example, such scattering fine particles include TiO2, Al2O3, ZnO, and the like.

[0179] Alternatively, the white resin can also be formed by utilizing a large number of fine pores or the like dispersed in the transparent resin.

[0180] A process for imparting light reflectivity to the insulating film 156 formed of an inorganic film such as SiO2 shown in FIG. 3A or the like may be performed. When whitening SiO2, for example, an SiO2 film formed by ALD (Atomic-Layer-Deposition) or CVD may be used on top of SOG or the like.

[0181] The insulating film 156a may be made of a material with low light transmittance. For example, the insulating film 156a may be formed of a black resin. By making the insulating film 156a a black resin, light scattering within the sub-pixel 420 is suppressed, and stray light is more effectively suppressed. An image display device with suppressed stray light can display a sharper image.

[0182] As shown in FIG. 30C, the second terminal 44 is provided on the light-transmissive electrode 160k via the anisotropic conductive member 40. In the present embodiment, since the thickness of the insulating film 156a is set to be thicker than the height of the light-emitting surface 151S, the second terminal 44 is electrically connected to the light-transmissive electrode 160k provided on the thick insulating film 156a via the anisotropic conductive member 40, which is different from the case of the above-described other embodiments in this regard, and is the same as the case of the other embodiments in other respects.

[0183] A method for manufacturing the image display device of the present embodiment will be described. In this embodiment, the formation process of the insulating film 156a is different from that in the above-described other embodiments, and in other respects, it is the same as that in the other embodiments. When the insulating film 156a is an organic resin, a coating process, injection molding using a mold, or the like is used. When the insulating film 156a is an inorganic material containing SiO2 or the like, as described above, CVD, ALD, sputtering, or the like is used to form the insulating film 156a.

[0184] The effects of the image display device of this embodiment will be described. The image display device of this embodiment has a passive matrix structure that does not require circuit elements such as transistors, similar to the image display devices of the other above-described embodiments. Therefore, the pitch of the sub-pixels 420 can be reduced. In addition, the image display device has sub-pixels 420 including an insulating film 156a having light reflectivity for separating the light-emitting elements 150. Therefore, scattered light reflected from the side or the like, or light emitted obliquely upward can be reflected, and the amount of light emitted from the light-emitting surface 151S can be increased. Therefore, the substantial light emission efficiency of the light-emitting element 150 can be improved.

[0185] (Fifth Embodiment) Figs. 31A to 31C are schematic cross-sectional views illustrating a part of the manufacturing method of the image display device of this embodiment. Fig. 31A is a cross-sectional view corresponding to the cross-section along the line A-A' in Fig. 2. Fig. 31B is a cross-sectional view corresponding to the cross-section along the line AA-AA' in Fig. 2. Fig. 31C is a cross-sectional view corresponding to the cross-section along the line B-B' in Fig. 2. Note that the cross-section corresponding to the cross-section along the line C-C' in Fig. 2 is the same as that shown in Fig. 30C of the above-described fourth embodiment, and thus the illustration and detailed description thereof are omitted. As shown in FIGS. 31A and 31B, the image display device of this embodiment has a sub-pixel 520 including a metal wiring 510. The metal wiring 510 is provided along the X-axis direction, instead of the wirings 110a and 210k in the above-described other embodiments. Similar to the wirings 110a and 210k, a plurality of metal wirings 510 are provided, and the plurality of metal wirings 510 are provided at substantially equal intervals and substantially parallel to each other in the Y-axis direction. The separation distance between adjacent metal wirings 510 is set to be substantially equal to the pitch of the light-emitting elements 150.

[0186] Light-emitting elements 150 are provided at substantially equal intervals on the metal wiring 510 in the X-axis direction. The metal wiring 510 includes bonding metals 514 and 515, and the bonding metals 514 and 515 are laminated and bonded in this order from the side of the first surface 103a. The bottom surface 153B of the light-emitting element 150 is in contact with the bonding metal 515, and the p-type semiconductor layer 153 is ohmically connected to the bonding metal 515. Therefore, the p-type semiconductor layer 153 is electrically connected to the first metal wiring 510 and is electrically connected to the light-emitting elements 150 provided adjacent to each other in the X-axis direction.

[0187] In this example, the insulating film 156a is formed of an insulating material having light reflectivity, but may be formed of a transparent resin as in the case of the first embodiment or the second embodiment.

[0188] Similar to the case of the first embodiment, a translucent electrode 160k is formed along the Y-axis direction and is connected to the light-emitting surface 151S of the light-emitting elements 150 arranged along the Y-axis direction.

[0189] As shown in FIG. 31C, the metal wiring 510 is provided on the first surface 103a of the substrate 100. More specifically, a bonding metal 514 is provided on the first surface 103a, and a bonding metal 515 is provided on the bonding metal 514. The first terminal 34 is provided on the bonding metal 515 via the anisotropic conductive member 30. The first terminal 34 is electrically connected to the metal wiring 510 via the anisotropic conductive particles 32 of the anisotropic conductive member 30. The binder 31 in the anisotropic conductive member 30 is provided to fix the connection between the first terminal 34 and the metal wiring 510, as described with reference to FIG. 4A and the like in the case of the other embodiments described above.

[0190] A method for manufacturing the image display device of the present embodiment will be described. FIGS. 32A to 34B are schematic cross-sectional views illustrating a part of the method for manufacturing the image display device of the present embodiment. FIGS. 33A and 34A are cross-sectional views corresponding to the cross-section taken along line A-A' of FIG. 2. FIGS. 33B and 34B are cross-sectional views corresponding to the cross-section taken along line AA-AA' of FIG. 2. As shown in FIG. 32A, a semiconductor growth substrate 1194 is prepared, and a metal layer 1115 is formed on the p-type semiconductor layer 1153 of the semiconductor growth substrate. The semiconductor growth substrate 1194 is bonded to the first surface 103a of the substrate 100 via the metal layers 1115 and 1114. The bonding process of the semiconductor layer 1150 and the substrate 100 via the metal layers 1114 and 1115 is omitted because it has been described in connection with FIG. 10A in the other embodiments described above.

[0191] As shown in FIG. 32B, the crystal growth substrate 1001 shown in FIG. 32A is removed by wet etching or laser lift-off.

[0192] As shown in FIGS. 33A and 33B, the metal layers 1115 and 1114 shown in FIG. 32B are processed by etching to form metal wirings 510. The plurality of metal wirings 510 are separated so as to be spaced apart in the Y-axis direction at substantially equal intervals and be substantially parallel to each other, thereby forming individual metal wirings 510. The metal layers 1115 and 1114 shown in FIG. 32B are continuously etched using the same mask.

[0193] The semiconductor layer 1150 shown in FIG. 32B is processed by etching to form a light-emitting element 150 as shown in FIGS. 33A and 33B. In this example, the light-emitting element 150 has a cylindrical shape with substantially equal diameters in the height direction of the light-emitting element 150, but it may have a prismatic shape. Also, similar to the case of the other above-described embodiments, it may have a frustum of a cone shape or a frustum of a pyramid shape.

[0194] As shown in FIGS. 34A and 34B, an insulating film 156a is formed to cover the first surface 103a, the metal wiring 510, and the light-emitting element 150. In this example, the insulating film 156a is formed of an insulating material having light reflectivity. The height of the insulating film 156a from the first surface 103a is formed to be higher than the height of the light-emitting surface 151S from the first surface 103a.

[0195] A part of the insulating film 156a above the light-emitting element 150 is removed to expose the light-emitting surface 151S. A light-transmissive wiring layer 160 including a plurality of light-transmissive electrodes 160k is formed on the insulating film 156a and the light-emitting surface 151S. The light-transmissive electrodes 160k are formed along the Y-axis direction and are formed to be spaced apart in the X-axis direction at substantially equal intervals and be substantially parallel to each other.

[0196] After that, a color filter is provided above the light-emitting surface 151S as necessary.

[0197] In this way, a sub-pixel 520 is formed.

[0198] The effects of the image display device of this embodiment will be described. The image display device of this embodiment has a passive matrix structure that does not require circuit elements such as transistors, similar to the image display devices of the other embodiments described above. Therefore, the pitch of the sub-pixels 520 can be shortened. In addition, the sub-pixels 520 of the image display device include metal wirings 510, and the metal wirings are used as wirings connected to the row selection circuit 5. Since the metal wirings 510 are formed by metal layers 1114 and 1115 having a sufficient thickness, the resistance component in the wiring direction can be reduced. Therefore, even when current flows through the light-emitting element 150 provided in a column far from the row selection circuit 5 in the display area 2 shown in FIG. 2, the voltage drop of the metal wiring 510 can be suppressed. Accordingly, the voltage of the DC power supply supplied to the row selection circuit 5 can be set lower, and the power consumption of the image display device can be reduced. When it is allowed to set the voltage of the DC power supply supplied to the row selection circuit 5 to be relatively high, a sufficient voltage can be supplied to the light-emitting elements provided at positions farther from the row selection circuit 5. Therefore, an image display device having a larger screen size can be realized.

[0199] In the image display device of this embodiment, instead of the wiring 110a in the case of the other embodiments described above, the metal wiring 510 can be used. The metal wiring 510 also functions as a bonding metal in the case of the other embodiments. Therefore, the steps of forming the wiring layer 110 and the insulating layer 112 including a plurality of wirings 110a can be omitted. Accordingly, the manufacturing process of the image display device can be shortened, and cost reduction, productivity improvement, etc. can be achieved.

[0200] (Sixth Embodiment) FIG. 35 is a schematic plan view illustrating a part of the image display device according to this embodiment. FIG. 35 shows enlarged views of portions a, b, and c shown in FIG. 1. Portion a corresponds to a part within the display area 2 shown in FIG. 1. Portion b corresponds to a part of the area spanning the display area 2 and the row wiring area 6 shown in FIG. 1. Portion c corresponds to a part of the area spanning the display area 2 and the column wiring area 8 shown in FIG. 1.

[0201] As shown in FIG. 35, the image display device 601 of the present embodiment includes a wiring 110a, a light-emitting element 150, a light-transmissive electrode 670k, a first terminal 34, a second terminal 644, and a light-transmissive substrate 680. In the present embodiment, the image display device 601 is different from the above-described other embodiments in that it includes a light-transmissive substrate 680. The image display device 601 of the present embodiment is different from the above-described other embodiments in the configuration of the second terminal 644. Further, the image display device 601 of the present embodiment is different from the above-described other embodiments in the configuration of the sub-pixel 620. The same components as those in the above-described other embodiments are denoted by the same reference numerals, and detailed descriptions thereof are appropriately omitted.

[0202] In the image display device 601, the light-transmissive substrate 680 is provided so as to cover the display area 2 shown in FIG. 1. The light-transmissive substrate 680 is provided so as to cover a part of the column wiring area 8 shown in FIG. 1 beyond the display area 2. The light-transmissive substrate 680 is, for example, a glass substrate. The light-transmissive electrode 670k is provided along the Y-axis direction. A plurality of light-transmissive electrodes 670k are provided. The plurality of light-transmissive electrodes 670k are provided so as to be spaced apart in the X-axis direction and be substantially parallel to each other at substantially equal intervals. The light-transmissive substrate 680 and the light-transmissive electrode 670k are provided above the light-emitting element 150 as will be described with reference to FIGS. 36A and later, and are shown by a two-dot chain line in FIG. 35.

[0203] The sub-pixel 620 of the image display device 601 is different from the above-described other embodiments in that it has a light-transmissive substrate 680 above the light-emitting element 150. The second terminal 644 is different from the above-described other embodiments in that it is connected to the light-transmissive electrode 670k provided on the light-transmissive substrate 680. The same components as those in the other embodiments are denoted by the same reference numerals, and detailed descriptions thereof are appropriately omitted.

[0204] FIGS. 36A to 36C are schematic cross-sectional views illustrating a part of the image display device according to the present embodiment. FIG. 36A is a cross-sectional view taken along line A-A' of FIG. 35. FIG. 36B is a cross-sectional view taken along line AA-AA' of FIG. 35. FIG. 36C is a cross-sectional view taken along line C-C' of FIG. 35. Note that the cross-section along line B-B' of FIG. 35 is the same as that shown in FIG. 4A of the other embodiments described above, so the illustration and detailed description thereof are omitted. The example described in this embodiment is assumed to be a monochrome image display device without a color filter. Hereinafter, since one subpixel constitutes one pixel, one pixel shall be referred to as a subpixel.

[0205] As shown in FIGS. 36A and 36B, a metal wiring 510 and an insulating film 156a are provided on a first surface 600a which is one surface of a substrate 600. In this example, the substrate 600 is a light-transmissive substrate, for example, a glass substrate. Instead of the glass substrate, a Si substrate having oxide films formed on both surfaces may be used as in the case of the other embodiments described above. The first surface 600a is a plane substantially parallel to the XY plane. The metal wiring 510 is the same as that in the fifth embodiment. The metal wiring 510 is provided along the X-axis direction. A plurality of metal wirings 510 are provided, and the plurality of metal wirings 510 are provided so as to be spaced apart in the Y-axis direction and be substantially parallel to each other at substantially equal intervals. Instead of the metal wiring 510, bonding metals 114 and 115 may be provided for each light-emitting element on the wiring 110a shown in FIG. 3A etc. as in the case of the first embodiment.

[0206] A plurality of light-emitting elements (first light-emitting element, second light-emitting element) 150 are provided on the metal wiring 510 in the same manner as in the fifth embodiment, and a bottom surface (first bottom surface, second bottom surface) 153B is in contact with a bonding metal 515. Therefore, the p-type semiconductor layer 153 is electrically connected to the metal wiring 510. A plurality of light-emitting elements 150 are arranged on the metal wiring 510, and the plurality of light-emitting elements are provided on the metal wiring 510 so as to be spaced apart in the Y-axis direction and be substantially at equal intervals.

[0207] A transparent electrode (third transparent electrode, fourth transparent electrode) 660k is provided over the light emitting surface 151S. The transparent electrode 660k is provided on the light emitting surfaces (first light emitting surface, second light emitting surface) 151S of the plurality of light emitting elements 150 respectively. The transparent electrode 660k is provided separately for each light emitting element 150 between the anisotropic conductive member 650 and the light emitting surface 151S. By providing the transparent electrode 660k for each light emitting surface 151S, when connected to the anisotropic conductive member 650, the connection resistance can be reduced as compared with the case where the transparent electrode 660k is not provided.

[0208] The insulating film 156a is provided to cover the first surface 600a, the metal wiring 510, the p-type semiconductor layer 153, and the light emitting layer 152. The insulating film 156a is provided to cover the side surface of the n-type semiconductor layer 151 and does not cover the light emitting surface 151S and the side surface of the n-type semiconductor layer 151 near the light emitting surface 151S in order to ensure the light transmissivity on the light emitting surface 151S.

[0209] The anisotropic conductive member (third anisotropic conductive member) 650 is provided on the insulating film 156a, the portion of the side surface of the n-type semiconductor layer 151 not covered by the insulating film 156a, and the transparent electrode 660k. The anisotropic conductive member 650 includes a binder 651 and anisotropic conductive particles 652. The binder 651 has the same function as the binders 31, 41 shown in FIGS. 4A and 4B, but is made of a material having light transmissivity. The binder 651 may be formed of the same material as the binders 31, 41 or a different material as long as it has light transmissivity. The binder 651 functions as an adhesive for fixing the opposing transparent electrodes 660k and 670k. The anisotropic conductive particles 652 have the same function as the anisotropic conductive particles 32, 42 shown in FIGS. 4A and 4B. The anisotropic conductive particles 652 may be formed of the same configuration and material as the anisotropic conductive particles 32, 42 or may be different. The anisotropic conductive particles 652 electrically connect the opposing transparent electrodes 660k and 670k.

[0210] The transparent electrode 670k is provided on the transparent electrode 660k via the anisotropic conductive member 650. The transparent electrode 670k is provided along the Y-axis direction. A plurality of transparent electrodes 670k are provided, and the plurality of transparent electrodes 670k are provided so as to be spaced apart in the X-axis direction at substantially equal intervals and be substantially parallel to each other.

[0211] The light-emitting elements 150 and the transparent electrodes 660k are arranged in a plurality along the X-axis direction on the metal wiring 510. The anisotropic conductive member 650 is provided between the transparent electrode 670k and the transparent electrode 660k, and is also provided between the transparent electrodes 670k adjacent to each other in the X-axis direction. Further, the anisotropic conductive member 650 is also provided between the transparent electrodes 660k adjacent to each other in the X-axis direction, and is also provided between the n-type semiconductor layers 151 of the n-type semiconductor layers 151 of the light-emitting elements 150 adjacent to each other in the X-axis direction.

[0212] The anisotropic conductive member 650 is also provided between the transparent electrodes 660k adjacent to each other in the Y-axis direction, and is also provided between the n-type semiconductor layers 151 of the light-emitting elements 150 adjacent to each other in the Y-axis direction.

[0213] Each of the transparent electrodes 670k is provided on the transparent electrode 660k via the anisotropic conductive member 650. In the region of the width W of the transparent electrode 670k shown in FIG. 36A, the anisotropic conductive particles 652 of the anisotropic conductive member 650 are in a conductive state. In the region between the transparent electrode 670k and the transparent electrode 670k provided adjacent to the transparent electrode 670k in the X-axis direction, the anisotropic conductive particles 652 are in a non-conductive state. Therefore, the transparent electrode 660k is electrically connected to the transparent electrode 670k provided to face the transparent electrode 660k via the third anisotropic conductive member 650.

[0214] The transparent substrate 680 is provided on the third anisotropic conductive member 650. The transparent substrate 680 is a substrate having transparency, for example, a glass substrate.

[0215] As shown in FIG. 36C, the second terminal 644 is connected to a translucent electrode 670k formed on a translucent substrate 680 via an anisotropic conductive member (second anisotropic conductive member) 640. The anisotropic conductive member 640 includes a binder 641 and anisotropic conductive particles 642. The configuration, material, and function of the binder 641 and the anisotropic conductive particles 642 are the same as those of the binder 651 and the anisotropic conductive particles 652. The anisotropic conductive particles 642 are in contact with the translucent electrode 670k and the second terminal 644, and electrically connect the translucent electrode 670k and the second terminal 644.

[0216] A plurality of second terminals 644 are provided, and the plurality of second terminals 644 are provided so as to be spaced apart from each other at substantially equal intervals and substantially parallel to each other in the X-axis direction. The anisotropic conductive member 640 is provided between each of the plurality of translucent electrodes 670k and the plurality of anisotropic conductive members 640. The anisotropic conductive member 640 is also provided between the translucent electrodes 670k adjacent to each other in the X-axis direction, and is also provided between the second terminals (third terminals) 644 adjacent to each other in the X-axis direction.

[0217] The n-type semiconductor layer 151 is electrically connected to the current drive circuit 7 shown in FIG. 1 via the translucent electrode 660k, the anisotropic conductive member 650, and the translucent electrode 670k.

[0218] FIG. 37 is a schematic perspective view illustrating the image display device of the present embodiment. As shown in FIG. 37, the image display device of this embodiment includes a large number of light-emitting elements 150 arranged in a matrix on a substrate 600. The region where the large number of light-emitting elements 150 are arranged is the display region 2 shown in FIG. 1, and a first terminal 34 is provided at the end of the display region 2. An anisotropic conductive member 650 including a binder 651 and anisotropic conductive particles 652 is provided on the light-emitting elements 150 arranged in a matrix. A light-transmissive substrate 680 on which a light-transmissive electrode 670k is formed is provided on the anisotropic conductive member 650. The light-transmissive electrode 670k is formed to face the anisotropic conductive member 650, and the light-transmissive electrode 670k and the light-emitting elements 150 arranged in a matrix are electrically connected via the anisotropic conductive member 650 as described above.

[0219] As in the example of FIG. 37, a color filter 180 can be further provided on the light-transmissive substrate 680. When the color filter 180 is provided, in order to reduce the loss during light transmission of the light-transmissive substrate 680, the light-transmissive substrate 680 may be made thinner.

[0220] FIG. 37 is an example of the case where the light-transmissive electrode 670k is connected to the light-emitting element 150 via the anisotropic conductive member 650. However, also in the above-described other embodiments, and also in the aspect where the light-transmissive electrode 160k is directly provided on the light-emitting element 150, a large number of the light-emitting elements 150 are arranged in a matrix in the same manner as this example.

[0221] A method for manufacturing the image display device of this embodiment will be described. FIG. 38A is a bottom view illustrating a part of the method for manufacturing the image display device of this embodiment. FIG. 38B is a cross-sectional view illustrating a part of the method for manufacturing the image display device of this embodiment. FIG. 38A is a bottom view of the light-transmissive substrate 680 viewed from the negative direction to the positive direction of the Z axis. FIG. 38B is a cross-sectional view taken along line D-D' of FIG. 38A. As shown in FIGS. 38A and 38B, the translucent substrate (the fourth substrate) 680 has a first surface 680a and a second surface 680b. The second surface 680b is the surface on the opposite side of the first surface 680a. A plurality of translucent electrodes (the first translucent electrode, the second translucent electrode) 670k are formed on the second surface 680b. The translucent electrode 670k is formed, for example, by forming a translucent conductive film over the second surface 680b and etching the translucent conductive film to form the translucent electrode 670k along the Y-axis direction. In FIG. 38A, it is shown that the end portion of the translucent electrode 670k is a connection region 646.

[0222] FIG. 39A is a bottom view illustrating a part of the method of manufacturing the image display device of the present embodiment. FIG. 39B is a cross-sectional view illustrating a part of the method of manufacturing the image display device of the present embodiment. FIG. 39A is a bottom view of the translucent substrate 680 as viewed from the negative direction to the positive direction of the Z-axis. FIG. 39B is a cross-sectional view taken along line D-D' of FIG. 39A. As shown in FIGS. 39A and 39B, a plurality of translucent electrodes (the first translucent electrode, the second translucent electrode) 670k are electrically connected to a plurality of second terminals (the second terminal, the third terminal) 644 via an anisotropic conductive member 640, respectively. The anisotropic conductive member 640 is applied or attached over the end portion of the second surface 680b in the X-axis direction so as to include, for example, the connection region 646. That is, the anisotropic conductive member 640 is also provided in the region between two adjacent connection regions 646.

[0223] By pressing and heating the translucent substrate 680 and the second terminal 644 in the Z-axis direction, the translucent electrode 670k and the second terminal 644 are electrically connected via the anisotropic conductive particles 642 in the connection region 646. Since the binder 641 containing the thermosetting adhesive is cured by heating, the second terminal 644 is fixed while maintaining the electrical connection with the translucent electrode 670k.

[0224] FIGS. 40A and 40B are schematic cross-sectional views illustrating a part of the method of manufacturing the image display device of the present embodiment. FIG. 40A, FIG. 41A, FIG. 42A, and FIG. 43A are cross-sectional views corresponding to the cross-section taken along the line A-A' of FIG. 35. FIG. 40B, FIG. 41B, FIG. 42B, and FIG. 43B are cross-sectional views corresponding to the cross-section taken along the line AA-AA' of FIG. 35. In the subsequent manufacturing processes, the same configurations as those described in FIGS. 32A and 32B in the case of the fifth embodiment are applied. Hereinafter, the processes after the processes of FIGS. 32A and 32B will be described. As shown in FIGS. 40A and 40B, a light-transmissive electrode 660k is formed on the light-emitting surface 151S for each light-emitting element 150. In the forming process of the light-transmissive electrode 660k, for example, a light-transmissive conductive film is formed on the n-type semiconductor layer 1151 shown in FIGS. 32A and 32B, and the light-transmissive electrode 660k is formed by processing the conductive film by etching. Thereafter, the semiconductor layer 1150 shown in FIGS. 32A and 32B is processed by etching to form the light-emitting element 150.

[0225] As shown in FIGS. 41A and 41B, the anisotropic conductive member 650a is applied or attached so as to cover the insulating film 156a, the light-emitting element 150, and the light-transmissive electrode 660k. In this example, among the light-emitting elements 150, the side surface of the n-type semiconductor layer 151 not covered by the insulating film 156a is covered by the anisotropic conductive member 650a. The anisotropic conductive member 650a is provided on the light-transmissive electrode 660k and is also provided between adjacent light-emitting elements 150.

[0226] The anisotropic conductive member 650a includes a binder 651a and anisotropic conductive particles 652a. Since no pressure is applied and no heating is performed on the binder 651a and the anisotropic conductive particles 652a, they are in an initial state. In the initial state, the binder 651a has fluidity and adhesiveness and does not exhibit adhesive force. In the initial state, the anisotropic conductive particles 652a are not conductive in any direction.

[0227] As shown in FIGS. 42A and 42B, a light-transmissive substrate 680 to which a second terminal 644 (not shown) is connected is prepared. The light-transmissive substrate 680 is arranged such that the second surface 680b faces the anisotropic conductive member 650a. The light-transmissive electrode 670k is oriented perpendicular to the metal wiring 510 and is arranged in alignment with the light-transmissive electrode 660k provided on the light-emitting surface 151S.

[0228] As shown in FIGS. 43A and 43B, pressure is applied to the light-transmissive substrate 680 and the substrate 600 in the Z-axis direction and they are heated. Due to the applied pressure, the light-transmissive electrode 670k and the light-transmissive electrode 660k are electrically connected via the anisotropic conductive particles 652. The binder 651 cured by heating fixes the light-transmissive electrode 660k and the light-transmissive electrode 670k in an electrically connected state.

[0229] In the anisotropic conductive member 650, a conduction path is formed along the direction in which pressure is applied. Therefore, the range in which the light-transmissive electrode 660k and the light-transmissive electrode 670k are electrically connected is, for example, a range defined by the length of the light-transmissive electrode 670k in the X-axis direction. In the region between two adjacent light-transmissive electrodes 670k in the X-axis direction, since no pressure is applied in the X-axis direction, no electrical connection is established between these two light-transmissive electrodes 670k.

[0230] Since no pressure is applied in the Y-axis direction to the anisotropic conductive member 650 between two adjacent light-transmissive electrodes 660k in the Y-axis direction, no electrical connection is established between these two light-transmissive electrodes 660k.

[0231] In the above description, the case where the anisotropic conductive member 650 is provided on the side of the light-emitting element 150 has been described. However, the anisotropic conductive member 650 may be applied or attached over the second surface 680b of the light-transmissive substrate 680 and the light-transmissive electrode 670k.

[0232] The same applies to the function of the anisotropic conductive member 640. That is, the second terminal 644 and the translucent electrode 670k provided to face each other via the anisotropic conductive member 640 are brought into conduction by pressure in the Z-axis direction. On the other hand, pressure is not applied in the X-axis direction between two second terminals 644 adjacent in the X-axis direction and between two translucent electrodes 670k adjacent in the X-axis direction. Therefore, conduction is not ensured between these two second terminals 644 and between the two translucent electrodes 670k.

[0233] The effects of the image display device of this embodiment will be described. Similar to the image display devices of the other embodiments described above, since it has a passive matrix structure that does not require circuit elements such as transistors, the pitch of the sub-pixels 620 can be reduced. In this embodiment, as described above, in the manufacturing method, the translucent electrode 670k formed on the light-emitting element 150 is formed in advance on the translucent substrate 680 and connected to the light-emitting element 150 using the anisotropic conductive member 650. Therefore, since the translucent electrode is not formed on a surface having a step, even if the pitch of the light-emitting element 150 is shortened, it is possible to reduce a decrease in yield due to disconnection or the like of the translucent electrode.

[0234] Also, since the translucent electrode 670k and the translucent electrode 660k are connected via the anisotropic conductive member 650, thermal stress during manufacturing can be reduced.

[0235] Furthermore, the connection process of the translucent electrode 670k can be shortened to the formation process and the connection process of the anisotropic conductive member 650. Therefore, the manufacturing process of the image display device is shortened, and cost reduction can be achieved.

[0236] (Seventh Embodiment) FIGS. 44A and 44B are schematic cross-sectional views illustrating a part of the image display device of this embodiment. FIG. 44A is a cross-sectional view corresponding to the cross-section taken along line A-A' of FIG. 35. FIG. 44B is a cross-sectional view corresponding to the cross-section taken along line AA-AA' of FIG. 35. As shown in FIGS. 44A and 44B, in the image display device of this embodiment, the subpixel 720 includes a substrate 702. The substrate 702 is formed of an organic resin and preferably has flexibility. On the substrate 702, a layer 703 having an Si compound such as SiO2 is provided. The layer 703 is provided to improve the adhesion of the metal material when forming the metal wiring 510. The metal wiring 510 and the insulating film 156a are provided on the first surface 703a.

[0237] In the image display device of this embodiment, the subpixel 720 includes a substrate 781. The substrate 781 is formed of, for example, a transparent organic resin material and preferably has flexibility. The substrate 781 has a first surface 781a and a second surface 781b. The second surface 781b is the surface opposite to the first surface 781a. The translucent electrode 670k is provided on the second surface 781b. The image display device of this embodiment includes the same components as those in the case of the sixth embodiment, except for the substrate 702 having the above-described layer 703 and the substrate 781. The same components are denoted by the same reference numerals and detailed description thereof is omitted.

[0238] A method for manufacturing the image display device of this embodiment will be described. FIGS. 45A and 45B are schematic cross-sectional views illustrating a part of the method for manufacturing the image display device of this embodiment. FIGS. 45A and 45B are cross-sectional views corresponding to the cross-section along line A-A' in FIG. 35. As shown in FIG. 45A, on the prepared substrate 700, the metal wiring 510, the light-emitting element 150, the translucent electrode 660k, the insulating film 156a, and the third anisotropic conductive member 650 described in the sixth embodiment and the like are formed. The substrate 700 includes two layers of substrates 701 and 702 and the layer 703. For example, the substrate 702 is formed by applying and baking a polyimide material on the first surface 701a of the substrate 702. Before forming the substrate 702, SiN is formed on one surface 701a. xAn inorganic film such as this may be formed. In this case, the substrate 702 is formed by applying a polyimide material onto the inorganic film formed on the surface 701a and baking it. The layer 703 is formed across the first surface 701a of the substrate 701.

[0239] In this embodiment, instead of the translucent substrate 680 shown in FIGS. 38A to 39B, a substrate 780 is used. The substrate (fourth substrate) 780 includes two layers of substrates 781 and 782. The substrate 782 is, for example, a translucent substrate and is a glass substrate. The substrate 781 is a substrate made of a transparent organic resin. As shown in FIG. 45B, the substrate 781 is formed on the surface 782a of the substrate 782. The substrates 781 and 782 are bonded together by, for example, an adhesive or the like.

[0240] The substrate 701 is removed by, for example, wet etching or laser lift-off. The substrate 782 is also removed by, for example, wet etching or the like.

[0241] The effects of the image display device of this embodiment will be described. In this embodiment, since the substrates 702 and 781 are formed of an organic resin formed into a thin shape, the image display device can be made lighter and thinner. Since the substrates 702 and 781 can be made of a flexible material, the image display device can be bent, and it is possible to realize, without a sense of incongruity, attachment to a curved surface, use for a wearable terminal such as goggles for virtual reality, and the like.

[0242] (Eighth Embodiment) FIG. 46 is a schematic plan view illustrating a part of the image display device of this embodiment. In the case of the other embodiments described above, the wiring for connecting to the row selection circuit was formed of a conductive material having high conductivity such as metal, but in this embodiment, the wiring for connecting to the current drive circuit is also formed of a conductive material having a high conductivity. As shown in FIG. 46, the image display device of the present embodiment includes a first metal wiring 812k, a light-emitting element 250, a translucent electrode 260a, and a second metal wiring 880a. The first metal wiring 812k is provided along the X-axis direction. A plurality of first metal wirings 812k are provided, and the plurality of first metal wirings 812k are spaced apart in the Y-axis direction and provided substantially parallel to each other at substantially equal intervals. The separation distance in the Y-axis direction of the first metal wiring 812k is set to be the pitch of the light-emitting element 250. In the present embodiment, the second metal wiring 880a can be directly connected to the second terminal 44.

[0243] The translucent electrode 260a is provided along the Y-axis direction. A plurality of translucent electrodes 260a are provided, and the plurality of translucent electrodes 260a are spaced apart in the X-axis direction and provided substantially parallel to each other at substantially equal intervals. The second metal wiring 880a is provided along the Y-axis direction. A plurality of second metal wirings 880a are provided, and the plurality of second metal wirings 880a are spaced apart in the X-axis direction and provided substantially parallel to each other at substantially equal intervals. The second metal wiring 880a is provided in a layer different from the translucent electrode 260a and is provided so as to be substantially parallel to the translucent electrode 260a in a plan view in the XY plane.

[0244] The light-emitting element 250 is provided at the intersection of the first metal wiring 812k and the second metal wiring 880a. Since the second metal wiring 880a is provided in a layer different from the translucent electrode 260a and is provided so as to be substantially parallel to the translucent electrode 260a in a plan view in the XY plane, the light-emitting element 250 is provided at the intersection of the first metal wiring 812k and the translucent electrode 260a.

[0245] In the present embodiment, the light-emitting element 250 has a frustum of a pyramid shape with a square cross-section, and the light-emitting surface 253S shown in FIGS. 47A and 47B described later is circular. The shape of the light-emitting element 250 may be a frustum of a cone shape, a cylinder, or a prism, similar to the case of the other embodiments described above.

[0246] FIGS. 47A and 47B are schematic cross-sectional views illustrating a part of the image display device of the present embodiment. FIG. 47A is a cross-sectional view taken along line A-A' of FIG. 46. FIG. 47B is a cross-sectional view taken along line AA-AA' of FIG. 46. As shown in FIGS. 47A and 47B, an upper structure including a second metal wiring 880a, a first metal wiring 812k, a light-emitting element 250, and a translucent electrode 260a is formed on a substrate 800. The substrate 800 is, for example, a translucent substrate, such as a glass substrate. It may also be a substrate including an Si substrate and an oxide film as in the case of the other embodiments described above. The second metal wiring 880a is provided on the first surface 800a of the substrate 800. The second metal wiring 880a is provided along the Y-axis direction. A plurality of second metal wirings 880a are provided, and the plurality of second metal wirings 880a are provided at intervals and substantially parallel to each other in the X-axis direction. The second metal wiring 880a is connected to the current drive circuit 7 at the end of the display area 2 shown in FIG. 1. The second metal wiring 880a is formed of a metal material having high conductivity, such as Al or Cu, or an alloy containing Al or Cu.

[0247] An insulating layer 802 is provided on the first surface 800a and the second metal wiring 880a. The insulating layer 802 is, for example, an oxide film such as SiO2, and is formed by, for example, CVD or the like.

[0248] The surface of the insulating layer 802 is flattened, and the first metal wiring 812k is formed on the flattened insulating layer 802. The first metal wiring 812k is formed along the X-axis direction. A plurality of first metal wirings 812k are provided, and the plurality of first metal wirings 812k are provided at intervals and substantially parallel to each other in the Y-axis direction. The first metal wiring 812k is connected to the row selection circuit 5 at the end of the display area 2 shown in FIG. 1.

[0249] Over the first metal wiring 812k, a bonding metal 810k is provided, and a light-emitting element 250 is provided on the bonding metal 810k. In the present embodiment, the light-emitting element 250 has a p-type semiconductor layer 253 as a light-emitting surface 253S and an n-type semiconductor layer 251 as a bottom surface. The bonding metal 810k is provided to make an ohmic contact with the n-type semiconductor layer 251 of the light-emitting element 250, as in the case of the other embodiments described above. Further, the bonding metal 810k is provided to reflect scattered light or the like below the light-emitting element 250 toward the light-emitting surface 253S side. Thereby, the substantial light-emitting efficiency of the light-emitting element 250 is improved. The configuration of the light-emitting element 250 is the same as that in the case of the second embodiment, and a detailed description thereof is omitted.

[0250] The insulating film 156 is provided to cover the insulating layer 802, the first metal wiring 812k, the bonding metal 810k, and the light-emitting element 250. A part of the insulating film 156 is removed above the light-emitting element 250 to form the light-emitting surface 253S. The material of the insulating film 156 is the same as that in the case of the other embodiments described above, and a detailed description thereof is omitted. Similarly, the insulating film 156 may be an insulating film 156a formed of an insulating material having light reflectivity, which is the same as that in the case of the other embodiments described above.

[0251] The transparent electrode 260a is provided along the Y-axis direction on the insulating film 156 and the light-emitting element 250. The transparent electrode 260a is provided so as to connect the light-emitting surfaces 253S of the light-emitting elements 250 arranged along the Y-axis direction to each other. A plurality of transparent electrodes 260a are provided. The plurality of transparent electrodes 260a are provided at intervals and substantially parallel to each other in the X-axis direction. The plurality of transparent electrodes 260a and the plurality of second metal wirings 880a are formed substantially parallel to each other in different layers. More specifically, in the region where the light-emitting element 250 exists, the plurality of transparent electrodes 260a and the plurality of second metal wirings 880a are laminated in the Z-axis direction via the light-emitting element 250, the bonding metal 810k, the first metal wiring 812k, and the insulating layer 802, and are arranged so as to have the same XY coordinates. In the region where the light-emitting element 250 does not exist, the plurality of transparent electrodes 260a and the plurality of second metal wirings 880a are laminated in the Z-axis direction via the insulating film 156 and the insulating layer 802, and are arranged so as to have the same XY coordinates.

[0252] The transparent electrode 260a has a contact portion 861a, and is connected to the via 862a at the contact portion 861a. The contact portion 861a and the via 862a are provided between adjacent light-emitting elements 250. A plurality of contact portions 861a and vias 862a are provided, and in this example, they are provided for each pair of adjacent light-emitting elements 250. Not limited to this example, the contact portion 861a and the via 862a may be provided for each group of a plurality of light-emitting elements arranged in the Y-axis direction.

[0253] The via 862a is provided so as to penetrate the insulating film 156 and the insulating layer 802 and reach the second metal wiring 880a. The via 862a is provided between the transparent electrode 260a and the second metal wiring 880a, and electrically connects the transparent electrode 260a and the second metal wiring 880a. Therefore, the p-type semiconductor layer 253 is electrically connected to the current drive circuit 7 via the transparent electrode 260a, the contact portion 861a, the via 862a, and the second metal wiring 880a.

[0254] In this example, the contact portion 861a and the via 862a are formed of the same material as the transparent electrode 260a. By forming the transparent electrode 260a, the contact portion 861a, and the via 862a of the same material, the formation of the transparent electrode 260a and the formation of the via 862a can be performed simultaneously. By performing the formation of the transparent electrode 260a and the via 862a simultaneously, the mutual connection at the contact portion 861a can also be performed simultaneously with the formation of the transparent electrode 260a and the via 862a.

[0255] The shape of the contact portion 861a and the cross-sectional shape of the via 862a can be appropriately set according to the materials of the contact portion 861a and the via 862a. In this example, since the materials of the contact portion 861a and the via 862a are the same as the material of the transparent electrode 260a, a sufficient cross-sectional area is taken to reduce the resistance value.

[0256] A method for manufacturing the image display device according to this embodiment will be described. In the method for manufacturing the image display device according to this embodiment, the formation process of the second metal wiring 880a and the formation process of the via 862a are different from those in the above-described other embodiments. In other respects, the cases of the above-described other embodiments can be applied.

[0257] In the formation process of the second metal wiring 880a, a metal layer can be formed on the first surface 800a of the prepared substrate 800, and the second metal wiring 880a can be formed by etching. After the formation of the second metal wiring 880a, an insulating layer 802 is formed to cover the first surface 800a and the second metal wiring 880a, and the surface of the insulating layer 802 is planarized.

[0258] The formation process of via 862a is executed after the formation process of insulating film 156. In the formation process of via 862a, via holes are formed at contact portion 861a which is the connection position between via 862a and the second metal wiring 880a. Contact portion 861a is selected at a position between two adjacent light-emitting elements 250 in the Y-axis direction as described above. The via holes for via 862a are formed to penetrate through insulating film 156 and insulating layer 802 and reach the second metal wiring 880a.

[0259] In this example, a conductive film having translucency for forming the translucent electrode 260a is formed over the insulating film 156 and the light-emitting element 250, and the formed conductive film is etched to form the translucent electrode 260a. Via 862a is formed by filling the via holes with the conductive film material during the formation of the conductive film, and the connection between via 862a and the translucent electrode through contact portion 861a is also performed simultaneously.

[0260] The effects of the image display device of the present embodiment will be described. In the image display device of the present embodiment, similar to the image display devices of the other embodiments described above, since it has a passive matrix structure that does not require circuit elements such as transistors, the pitch of sub-pixel 820 can be shortened. In addition, the connection between the current drive circuit 7 and each light-emitting element 250 is realized by the second metal wiring 880a in addition to the translucent electrode 260a. By connecting the translucent electrode 260a and the second metal wiring 880a in parallel, the resistance value in the wiring direction of the wiring between the current drive circuit 7 and each light-emitting element 250 is reduced. By using a metal material containing Al, Cu, etc. having a high conductivity for the second metal wiring 880a, the resistance component in the wiring direction between the current drive circuit 7 and each light-emitting element 250 can be reduced. Therefore, since the resistance component of the wiring for supplying current to each light-emitting element 250 is decreased, the voltage value of the DC power supply for driving each light-emitting element 250 can be made lower, and the power consumption of the image display device can be further reduced. Even if the voltage of the DC power supply for driving each light-emitting element 250 is lowered, a sufficient voltage can be applied between the terminals of each light-emitting element 250, so that the display area can be made larger.

[0261] When manufacturing the image display device of this embodiment, the technology for forming vias that penetrate a plurality of insulating layers is already established, and since the image display device can be manufactured by a proven process, the manufacturing yield can be increased and the quality can be improved by reducing connection failures and the like.

[0262] In this embodiment, an example in which the p-type semiconductor layer 253 is used as the light-emitting surface 253S has been described. However, by applying the examples of the other embodiments described above, for example, an image display device in which the n-type semiconductor layer 151 shown in FIG. 3A is used as the light-emitting surface 151S can also be easily manufactured.

[0263] (The Ninth Embodiment) The image display device described above can be, for example, a computer display, a television, a portable terminal such as a smartphone, or a car navigation system as an image display module having an appropriate number of pixels.

[0264] FIG. 48 is a block diagram illustrating the image display device according to this embodiment. FIG. 48 shows the main parts of the configuration of a computer display. As shown in FIG. 48, the image display device 901 includes an image display module 902. The image display module 902 is, for example, an image display device having the configuration in the case of the first embodiment described above. The image display module 902 includes a display area 2 in which a plurality of sub-pixels including the sub-pixel 20 are arranged, a row selection circuit 5, and a current drive circuit 7.

[0265] The image display device 901 further includes a controller 970. The controller 970 inputs control signals separated and generated by an interface circuit (not shown) and controls the driving and driving order of each sub-pixel for the row selection circuit 5 and the current drive circuit 7.

[0266] (Modification) The above-described image display device can be, for example, a computer display, a television, a portable terminal such as a smartphone, or a car navigation system, etc., as an image display module having an appropriate number of pixels.

[0267] FIG. 49 is a block diagram illustrating an image display device according to a modification of the present embodiment. The configuration of a high-definition thin television is shown in FIG. 49. As shown in FIG. 49, the image display device 901a includes an image display module 902a. The image display module 902a is, for example, the image display device 1 having the configuration in the case of the above-described first embodiment. The image display device 901a includes a controller 970a and a frame memory 980a. The controller 970a controls the driving order of each sub-pixel in the display area 2 based on the control signal supplied through the bus 940a. The frame memory 980a stores display data for one frame and is used for processing such as smooth video playback.

[0268] The image display device 901a has an I / O circuit 910a. In FIG. 49, the I / O circuit 910a is simply denoted as "I / O". The I / O circuit 910a provides an interface circuit or the like for connecting to an external terminal, device, etc. The I / O circuit 910a includes, for example, a USB interface for connecting an external hard disk device or the like, an audio interface, and the like.

[0269] The image display device 901a has a receiving unit 920a and a signal processing unit 930a. An antenna 922a is connected to the receiving unit 920a, and necessary signals are separated and generated from the radio waves received by the antenna 922a. The signal processing unit 930a includes a DSP (Digital Signal Processor), a CPU (Central Processing Unit), etc., and the signals separated and generated by the receiving unit 920a are separated and generated into image data, audio data, etc. by the signal processing unit 930a.

[0270] By using the receiving unit 920a and the signal processing unit 930a as high-frequency communication modules for mobile phone transmission / reception, WiFi, GPS receivers, etc., it can also be made into other image display devices. For example, an image display device equipped with an image display module having an appropriate screen size and resolution can be made into a mobile information terminal such as a smartphone or a car navigation system.

[0271] In the case of this embodiment, the image display module is not limited to the configuration of the image display device in the case of the first embodiment, and may be a modified example or the case of other embodiments. The image display module in the case of this embodiment and the modified example is configured to include a large number of sub-pixels as shown in FIG. 37.

[0272] According to the embodiment described above, an image display device capable of high definition and high-speed response can be realized.

[0273] As described above, some embodiments of the present invention have been described. However, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and its equivalents. In addition, the above-described embodiments can be implemented in combination with each other.

Explanation of Reference Numerals

[0274] 1,201,601,901,901a Image display device, 2 Display area, 5,205 Row selection circuit, 6 Row wiring area, 7,207 Current drive circuit, 8 Column wiring area, 10,210,310 Pixel, 20,220,320,420,520,620,720,820 Sub-pixel, 30,40,640,650 Anisotropic conductive member, 100,600,702 Substrate, 110a,210k Wiring, 112 Insulating layer, 150,250 Light-emitting element, 151S,253S Light-emitting surface, 156,156a Insulating film, 160k,260a,660k,670k Transparent electrode, 180 Color filter, 350 Semiconductor layer, 510 Metal wiring, 680 Transparent substrate, 812k First metal wiring, 880a Second metal wiring, 1001 Substrate for crystal growth, 1150 Semiconductor layer, 1190 Support substrate, 1194,1294 Semiconductor growth substrate

Claims

1. A step of preparing a second substrate having a semiconductor layer including a light-emitting layer formed on a first substrate; A step of forming a first conductive layer on a first surface of a third substrate; A step of bonding the semiconductor layer to the third substrate via the first conductive layer; A step of removing the first substrate; A step of processing the first conductive layer to form a first wiring along a first direction; A step of processing the semiconductor layer to form a first light-emitting element having a first light-emitting surface and a second light-emitting element having a second light-emitting surface; A step of forming an insulating film covering the first surface, the first wiring, the first light-emitting element, and the second light-emitting element; A step of removing a part of the insulating film to expose the first light-emitting surface and the second light-emitting surface; A step of forming a first light-transmissive electrode provided along a second direction intersecting the first direction on the first light-emitting surface, and forming a second light-transmissive electrode provided along the second direction on the second light-emitting surface; A step of providing a first anisotropic conductive member between the first terminal and the first wiring, and electrically connecting the first terminal and the first wiring by pressure applied between the first terminal and the first wiring; A step of electrically connecting the first light-transmissive electrode and a second terminal via a second anisotropic conductive member, and electrically connecting the second light-transmissive electrode and a third terminal via the second anisotropic conductive member; Comprising; The first light-emitting element has a first bottom surface connected to the first wiring, and the first light-emitting surface is provided on the opposite side of the first bottom surface; The second light-emitting element has a second bottom surface connected to the first wiring, and the second light-emitting surface is provided on the opposite side of the second bottom surface. A method for manufacturing an image display device.

2. A step of preparing a second substrate having a semiconductor layer including a light-emitting layer formed on a first substrate; A step of forming a second conductive layer on the semiconductor layer; A step of preparing a third substrate having a first surface; A step of bonding the semiconductor layer to the first surface via the second conductive layer; A step of removing the first substrate; A step of processing the second conductive layer to form a first wiring along a first direction; A step of processing the semiconductor layer to form a first light-emitting element having a first light-emitting surface and a second light-emitting element having a second light-emitting surface; A step of forming an insulating film covering the first surface, the first wiring, the first light-emitting element, and the second light-emitting element; A step of removing a part of the insulating film to expose the first light-emitting surface and the second light-emitting surface; Form a first light-transmissive electrode provided along a second direction intersecting the first direction on the first light-emitting surface, and form a second light-transmissive electrode provided along the second direction on the second light-emitting surface; Provide a first anisotropic conductive member between the first terminal and the first wiring, and electrically connect the first terminal and the first wiring by the pressure applied between the first terminal and the first wiring; Electrically connect the first light-transmissive electrode and the second terminal via a second anisotropic conductive member, and electrically connect the second light-transmissive electrode and the third terminal via the second anisotropic conductive member; comprising; The first light-emitting element has a first bottom surface connected to the first wiring, and the first light-emitting surface is provided on the side opposite to the first bottom surface; The second light-emitting element has a second bottom surface connected to the first wiring, and the second light-emitting surface is provided on the side opposite to the second bottom surface. A method for manufacturing an image display device.

3. The step of electrically connecting the first light-transmissive electrode and the second terminal, and electrically connecting the second light-transmissive electrode and the third terminal is: Providing the second anisotropic conductive member between the first light-transmissive electrode and the second terminal and between the second light-transmissive electrode and the third terminal, and electrically connecting the second terminal and the first light-transmissive electrode by the pressure applied between the second terminal and the first light-transmissive electrode, and electrically connecting the third terminal and the second light-transmissive electrode by the pressure applied between the second light-transmissive electrode and the third terminal. The method for manufacturing an image display device according to claim 1, including the above.

4. The step of forming the first light-transmissive electrode and the second light-transmissive electrode is: Forming a first light-transmissive electrode and a second light-transmissive electrode on a second surface of a fourth substrate having light-transmittance; Arranging the first light-emitting surface and the second light-emitting surface to face the second surface via a third anisotropic conductive member, and electrically connecting the first light-emitting surface and the first light-transmissive electrode and electrically connecting the second light-emitting surface and the second light-transmissive electrode by the pressure applied between the fourth substrate and the third substrate. The method for manufacturing an image display device according to claim 1, including the above.

5. After the step of exposing the first light-emitting surface and the second light-emitting surface, a step of forming a third light-transmissive electrode on the first light-emitting surface and a step of forming a fourth light-transmissive electrode on the second light-emitting surface The method for manufacturing an image display device according to claim 1, further comprising the above.

6. The step of electrically connecting the first light-transmissive electrode and the second terminal, and electrically connecting the second light-transmissive electrode and the third terminal is The method of manufacturing an image display device according to claim 4, comprising the step of providing the second anisotropic conductive member between the first light-transmissive electrode and the second terminal and between the second light-transmissive electrode and the third terminal, and electrically connecting the second terminal and the first light-transmissive electrode by the pressure applied between the second terminal and the fourth substrate, and electrically connecting the third terminal and the second light-transmissive electrode by the pressure applied between the fourth substrate and the third terminal.

7. The method of manufacturing an image display device according to claim 4, wherein the fourth substrate includes a glass layer.

8. The fourth substrate further includes an organic resin layer provided on the glass layer. After the step of disposing the first light-emitting surface and the second light-emitting surface to face the second surface of the fourth substrate via a third anisotropic conductive member, and electrically connecting the first light-emitting surface and the first light-transmissive electrode and electrically connecting the second light-emitting surface and the second light-transmissive electrode by the pressure applied between the fourth substrate and the third substrate, the method of manufacturing an image display device according to claim 7 further comprises a step of removing the glass layer.

9. The step of forming the first wiring is performed after the step of bonding the semiconductor layer to the third substrate in the method of manufacturing an image display device according to claim 1.

10. The step of forming a wavelength conversion member on the first light-emitting element and the second light-emitting element The method of manufacturing an image display device according to claim 1, further comprising.

11. The method of manufacturing an image display device according to claim 10, wherein the step of forming the wavelength conversion member includes the step of forming the wavelength conversion member on a plurality of light-emitting elements including the first light-emitting element and the second light-emitting element.

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