Gas barrier film

Abstract

To provide a gas barrier film that shows excellent gas barrier properties and transparency.SOLUTION: A gas barrier film has a base material, a ground layer provided on the base material, and an oxide mixture film provided on the ground layer. The surface of the gas barrier film has an arithmetic average roughness (Ra) of 1.0 nm or less and has a maximum peak height (Rp) of 10.0 nm or less.SELECTED DRAWING: None

Description

Technical Field

[0001] The present invention relates to a gas barrier film. More specifically, the present invention relates to a gas barrier film exhibiting excellent gas barrier properties and transparency.

Background Art

[0002] Conventionally, gas barrier films based on plastic films and the like have been used as packaging materials for foods, medical products, etc., and electronic device members such as display devices and solar cells (Patent Documents 1 and 2). In order to block gases such as oxygen and water vapor, a gas barrier layer made of a metal or a metal oxide is formed in the gas barrier film. In particular, for applications as electronic device members, excellent transparency and gas barrier properties are required.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the gas barrier films described in Patent Document 1 and the gas barrier films described in Patent Document 2, pinholes are likely to occur on the surface of the base material, and the gas barrier property is likely to deteriorate. Further, when these gas barrier films are thickened to enhance the gas barrier property, the transparency is likely to decrease. Therefore, there is room for improvement in terms of achieving both gas barrier property and transparency in these gas barrier films.

[0005] The present invention has been made in view of such conventional inventions, and an object thereof is to provide a gas barrier film exhibiting excellent gas barrier properties and transparency.

Means for Solving the Problems

[0006] As a result of intensive studies, the present inventors have found that by providing an underlayer on a substrate and an oxide mixed film thereon, it is possible to prevent the generation of pinholes starting from fine deposits, protrusions, etc. generated on the substrate, and by providing an oxide mixed film (for example, a layer composed of an oxide mixed film of zinc, tin, aluminum, silicon, etc.), it is possible to provide a high gas barrier property while maintaining high transparency as a thin film, and thus completed the present invention. That is, the gas barrier film of the present invention for solving the above problems mainly includes the following configuration.

[0007] (1) A gas barrier film including a substrate, an underlayer provided on the substrate, and an oxide mixed film provided on the underlayer, wherein the arithmetic mean roughness (Ra) on the surface of the gas barrier film is 1.0 nm or less, and the maximum peak height (Rp) is 10.0 nm or less.

[0008] According to such a configuration, an underlayer is provided on the substrate for the gas barrier film. Thereby, even if there are fine deposits, protrusions, etc. on the substrate, the surface of the substrate can be flattened, and an oxide mixed film is provided on the flattened underlayer. As a result, pinholes starting from the above fine deposits and protrusions are less likely to occur, and the gas barrier film can exhibit excellent gas barrier properties. Due to the excellent gas barrier properties, there is almost no change in the surface roughness of the underlayer and the surface roughness after laminating the oxide mixed film.

[0009] (2) The gas barrier film according to (1), wherein the thickness of the oxide mixed film is 5 to 250 nm.

[0010] According to such a configuration, since the thickness of the oxide mixed film is small, a gas barrier film with excellent transparency can be obtained.

[0011] (3) The oxide mixed film contains a first element and a second element, and the ratio ((b) / (a + b)) of the number of atoms (b) of the second element to the total amount ((a + b)) of the number of atoms (a) of the first element and the number of atoms (b) of the second element is 0.08 to 0.42. The gas barrier film according to (1) or (2).

[0012] According to such a configuration, the gas barrier film can exhibit more excellent gas barrier properties.

[0013] (4) The first element is zinc oxide, the second element is an oxide of at least one metal selected from tin, aluminum, and silicon, and the oxide mixed film is composed of a mixture of the first element and the second element. The gas barrier film according to (3).

[0014] According to such a configuration, the gas barrier film can exhibit even more excellent gas barrier properties.

[0015] (5) The water vapor transmission rate is less than 1×10 -3 (g / m 2 / day). The gas barrier film according to any one of (1) to (4).

[0016] According to such a configuration, the gas barrier film can exhibit excellent gas barrier properties particularly against water vapor.

[0017] (6) The base layer contains an organic-inorganic composite oxide. The gas barrier film according to any one of (1) to (5).

[0018] According to such a configuration, the gas barrier film has excellent interlayer adhesion between the base material layer and the oxide mixed film. Also, the gas barrier film exhibits more excellent gas barrier properties.

[0019] (7) When measuring the silicon component of the underlayer in the thickness direction of the underlayer by X-ray photoelectron spectroscopy (XPS) from the surface of the underlayer in contact with the oxide mixed film toward the substrate side, the atomic concentration of the silicon component on the surface in contact with the oxide mixed film is 18 to 40 at%. The gas barrier film according to any one of (1) to (6).

[0020] According to such a configuration, due to the large amount of inorganic components present on the surface of the underlayer, the surface of the underlayer has excellent resistance to the plasma environment when laminating the oxide mixed film, and also has excellent adhesion to the oxide mixed film formed thereon. As a result, the gas barrier film has better interlayer adhesion between the substrate and the oxide mixed film. In addition, the gas barrier film exhibits even better gas barrier properties.

Effects of the Invention

[0021] According to the present invention, it is possible to provide a gas barrier film exhibiting excellent gas barrier properties and transparency.

Modes for Carrying Out the Invention

[0022] <Gas Barrier Film> The gas barrier film according to an embodiment of the present invention includes a substrate, an underlayer provided on the substrate, and an oxide mixed film provided on the underlayer. The arithmetic mean roughness (Ra) on the surface of the gas barrier film is 1.0 nm or less, and the maximum peak height (Rp) is 10.0 nm or less. In the gas barrier film of this embodiment, an underlayer is provided on the substrate. Thereby, even if there are fine deposits, protrusions, etc. on the substrate, the surface of the substrate can be flattened, and an oxide mixed film is provided on the flattened underlayer. As a result, pinholes starting from the above-mentioned fine deposits, protrusions, etc. are less likely to occur, and the gas barrier film can exhibit excellent gas barrier properties. In addition, the gas barrier film is provided with an oxide mixed film. Such a gas barrier film provided with an oxide mixed film exhibits excellent transparency while exhibiting excellent gas barrier properties. Hereinafter, each configuration will be described.

[0023] (Base material) As the base material, a resin film commonly used in gas barrier films can be used. For example, the base material can be a plastic film or plastic sheet such as polyethylene terephthalate (PET), cycloolefin polymer (COP), polyethylene (PE), polyimide (PI), etc. Among these, it is preferable that the base material is made of a material having flexibility like a plastic film. Thereby, the gas barrier film can be suitably used in a wide range of applications such as electronic device parts such as displays and solar cell panels.

[0024] The thickness of the base material is not particularly limited. For example, the thickness of the base material is preferably 12 μm or more. Also, the thickness of the base material is preferably 200 μm or less. When the thickness of the base material is within the above range, the resulting gas barrier film can exhibit appropriate rigidity and strength.

[0025] (Underlayer) The underlayer is provided on the base material. The underlayer is provided to flatten the surface of the base material, prevent the generation of defects such as pinholes in the oxide mixed film, and improve the interlayer adhesion between the base material and the oxide mixed film. That is, for example, when there are fine deposits or protrusions on the base material, if an oxide mixed film is formed on the base material, there is a risk of pinholes starting from such deposits. Therefore, in the gas barrier film of this embodiment, by forming the underlayer, even if there are fine deposits or protrusions on the base material, it is easy to prevent defects from occurring due to the influence of such deposits or surface roughness. As a result, the resulting gas barrier film exhibits excellent gas barrier properties.

[0026] The structure of the underlayer is not particularly limited. For example, the underlayer is preferably a layer having a high silicon atom concentration (e.g., 18 at% or more and 40 at% or less) at the interface with the oxide mixed film. Such an underlayer may be, for example, one having a silicon atom concentration of 18 at% or more and 40 at% or less throughout the underlayer, or one in which the silicon atom concentration is uneven in the thickness direction at the interface in contact with the oxide mixed film (where silicon atoms are unevenly distributed near the surface of the underlayer. Inclined film), or a multi-layer film in which an organic film and an inorganic component are laminated, etc. When the underlayer is a layer having a high silicon atom concentration (e.g., 18 at% or more and 40 at% or less) at the interface with the oxide mixed film, the surface is less likely to be roughened by the plasma environment during the formation of the oxide mixed film compared to the case where the underlayer consists only of an organic component or where the silicon atom concentration is low. As a result, the gas barrier film is less likely to have defects in the oxide mixed film and is likely to exhibit excellent gas barrier properties.

[0027] Among these, the underlayer is preferably a layer containing an organic-inorganic composite oxide, and more preferably a layer in which the inorganic component is unevenly distributed at the interface in contact with the oxide mixed film. As a result, the underlayer exhibits excellent plasma resistance and adhesion to the oxide mixed film. Thereby, the gas barrier film suppresses defects generated in the oxide mixed film and has excellent interlayer adhesion between the base material layer and the oxide mixed film. In addition, the gas barrier film exhibits more excellent gas barrier properties.

[0028] Further, the underlayer is preferably silicon oxide composed of SiOx, polysilazane, silicon alkoxide, etc. as the inorganic component. When the underlayer contains silicon oxide as the inorganic component, the surface of the base material on which the underlayer is formed is flat and exhibits excellent plasma resistance, and also has excellent adhesion to the oxide mixed film. As a result, the gas barrier film suppresses defects generated in the oxide mixed film and has more excellent interlayer adhesion between the base material layer and the oxide mixed film. In addition, the gas barrier film exhibits even more excellent gas barrier properties.

[0029] The method for forming the underlayer is not particularly limited. For example, an underlayer containing an organic-inorganic composite oxide can be formed by preparing a solution in which the organic-inorganic oxide is dissolved in an arbitrary solvent, applying it (for example, by spray coating) onto a substrate, and then curing or drying it. At this time, since the surface of the applied solution is flattened by surface tension, the surface of the resulting underlayer also becomes flat. More specifically, when forming an underlayer containing silicon oxide, an underlayer can be formed by applying (for example, by spray coating) a SiOx or perhydropolysilazane (PHPS) solution onto a substrate and then heat-curing it. The underlayer made of perhydropolysilazane has Si-H, Si-N, and Si-O bonds. Such an underlayer can be further oxidized by curing in an oxidizing atmosphere, and the interlayer adhesion between the underlayer and the oxide mixed film can be further improved. In addition, the underlayer containing polysilazane formed in this way exhibits excellent flatness and plasma resistance. As a result, when an oxide mixed film is formed on the substrate on which the underlayer is formed, the oxide mixed film is less likely to have defects such as pinholes. Furthermore, the surface of the formed oxide mixed film also has excellent smoothness. As a result, even when a second oxide mixed film is formed on the oxide mixed film, defects such as pinholes are less likely to occur.

[0030] In addition, when forming an underlayer that is an inclined film in which the concentration of the inorganic component is uneven in the thickness direction, for example, a solution in which an organic-inorganic hybrid resin containing a silicon alkoxide containing a surfactant component is dissolved in an arbitrary solvent is prepared, applied onto a substrate, and dried and cured, an inclined film in which the silicon alkoxide is unevenly distributed on the surface of the underlayer can be formed. In such an inclined film, a large amount of silicon component (for example, 18 at% or more and 40 at% or less) exists in the vicinity of the interface in contact with the oxide mixed film. On the other hand, in the vicinity of the interface in contact with the substrate, a large amount of organic component exists. The surface on the side where a large amount of inorganic component exists can improve the interlayer adhesion with the oxide mixed film by forming a flat surface. On the other hand, the surface on the side where a large amount of organic component exists has excellent interlayer adhesion with the substrate made of the same organic component.

[0031] In addition, a multi-layer base layer in which an organic film and an inorganic component are laminated can be formed, for example, by providing a base layer made of an organic component as the base layer on the side in contact with the substrate, and providing a base layer made of an inorganic component such as SiOx or perhydropolysilazane as the base layer on the side in contact with one of the oxide mixed films.

[0032] When measuring the inorganic component of the base layer in the thickness direction of the base layer by X-ray photoelectron spectroscopy (XPS) from the surface of the base layer in contact with the oxide mixed film toward the substrate side, the concentration of silicon atoms on the surface in contact with the oxide mixed film is preferably 18 at% or more and 40 at% or less. When the concentration of the inorganic component is within the above range, the gas barrier film has excellent plasma resistance and excellent adhesion to the oxide mixed film due to the inorganic component present in large amounts on the surface of the base layer. As a result, the gas barrier film suppresses defects generated in the oxide mixed film and has more excellent interlayer adhesion between the substrate layer and the oxide mixed film. In addition, the gas barrier film exhibits more excellent gas barrier properties. In the present embodiment, the concentration of carbon atoms constituting the base layer is preferably 55 at% or less at the surface in contact with the oxide mixed film, and the concentration of the inorganic component at sites other than the surface (for example, inside) is not particularly limited. The concentration of silicon atoms inside the base layer may be 40 at% or more or less than 18 at%. The XPS measurement in the present embodiment can be performed using an X-ray photoelectron spectrometer (PHI5000 VersaProbe2, manufactured by ULVAC-PHI, Inc.).

[0033] The thickness of the base layer is not particularly limited. For example, the thickness of the base layer is preferably 0.5 μm or more, more preferably 1.0 μm or more. Also, the thickness of the base layer is preferably 10 μm or less, more preferably 5 μm or less. When the thickness of the base layer is within the above range, the resulting gas barrier film can easily planarize the surface of the substrate and can easily improve the interlayer adhesion with the oxide mixed film.

[0034] (Oxide mixed film) The oxide mixed film is a layer provided on a substrate. The oxide mixed film is not particularly limited. For example, the oxide mixed film preferably consists of a mixture of zinc oxide and an oxide of at least one metal selected from tin (Sn), aluminum (Al), and silicon (Si) in terms of the excellent gas barrier property of the resulting gas barrier film. More specifically, the oxide mixed film is preferably an oxide film containing a mixture of zinc oxide, silicon oxide, and aluminum oxide (hereinafter also referred to as an AZO oxide film), or an oxide film containing a mixture of zinc oxide and tin oxide (hereinafter also referred to as a ZTO oxide film).

[0035] In the oxide mixed film of the present embodiment, the ratio ((b) / (a + b)) of the number of atoms (b) of the second element to the total amount ((a + b)) of the number of atoms (a) of the first element and the number of atoms (b) of the second element is preferably 0.08 to 0.42.

[0036] As a more preferable specific example, the ratio ((b) / (a + b)) of the number of atoms (b) of at least one metal selected from tin, aluminum, and silicon to the total amount ((a + b)) of the number of atoms (a) of zinc and the number of atoms (b) of at least one metal selected from tin, aluminum, and silicon is preferably 0.08 or more. Also, the ratio ((b) / (a + b)) is preferably 0.42 or less. When the ratio ((b) / (a + b)) is within the above range, the gas barrier film can exhibit more excellent gas barrier property. An X-ray photoelectron spectroscopy analyzer (PHI5000 VersaProbe2, manufactured by ULVAC-PHI, Inc.) can be used for measurement.

[0037] The refractive index of the oxide mixed film is not particularly limited. For example, the refractive index of the oxide mixed film is preferably from 1.70 to 2.03. The refractive index of the oxide mixed film can be measured, for example, by performing spectral analysis of transmission and reflection in the range of 300 nm to 800 nm using a spectrophotometer (SolidSpec-3700, Shimadzu Corporation). When the refractive index of the oxide mixed film is within the above range, the resulting gas barrier film is less likely to have a decrease in transparency and has a smaller color difference.

[0038] The method for adjusting the refractive index of the oxide mixed film within the above range is not particularly limited. For example, the refractive index of the oxide mixed film can be adjusted by changing the film formation pressure and oxygen partial pressure during reactive sputtering.

[0039] When the oxide mixed film contains silicon, the content of silicon is not particularly limited. For example, the content of silicon is preferably 10.0 at% or more and preferably 14.8 at% or less. When the oxide mixed film contains aluminum, the content of aluminum is not particularly limited. For example, the content of aluminum is preferably 1.2 at% or more and preferably 2.1 at% or less. Also, the oxygen content in the oxide mixed film is not particularly limited. For example, the oxygen content is preferably 51.6 at% or more and preferably 59.5 at% or less. The zinc content in the oxide mixed film can be calculated based on the above-described contents of silicon, aluminum, and oxygen.

[0040] The thickness of the oxide mixed film may be 5 nm or more. Also, the thickness of the oxide mixed film may be 250 nm or less. When the thickness of the oxide mixed film is within the above range, the resulting gas barrier film exhibits excellent gas barrier properties and excellent transparency. Furthermore, even when the gas barrier film is processed into various thicknesses, the color difference at each thickness is small. The thickness of the oxide mixed film can be measured, for example, by an electron microscope.

[0041] The method for forming the oxide mixed film is not particularly limited. For example, the oxide mixed film can be formed by a sputtering method. Specifically, in the case of an AZO oxide film, the oxide mixed film is formed on a substrate (on an underlayer formed on the substrate) by a reactive sputtering method using a mixed target composed of, for example, aluminum oxide, silicon oxide, and zinc oxide in an atmosphere of a mixed gas of argon and oxygen to form an AZO oxide film.

[0042] Returning to the description of the entire gas barrier film, the gas barrier film of the present embodiment preferably has a water vapor transmission rate (WVTR) of less than 1×10 -3 (g / m 2 / day). The gas barrier film of the present embodiment has an oxide mixed film laminated thereon, and the thickness of the oxide mixed film is 5 to 250 nm. Therefore, the gas barrier film can exhibit particularly excellent gas barrier properties against water vapor. In the present embodiment, the water vapor transmission rate can be measured by the "differential pressure method (ISO 15106-5)".

[0043] In addition, the arithmetic mean roughness (Ra) on the outermost surface of the gas barrier layer is 1.0 nm or less, and the maximum peak height (Rp) is 10.0 nm or less. The arithmetic mean roughness (Ra) only needs to be 1.0 nm or less, and preferably 0.5 nm or less. The maximum peak height (Rp) only needs to be 10.0 nm or less, and preferably 5.0 nm or less. When the arithmetic mean roughness (Ra) and the maximum peak height (Rp) are within the above ranges, the oxide mixed film is formed on a substrate with a flat underlayer formed thereon. As a result, the gas barrier film has excellent interlayer adhesion between the substrate layer and the oxide mixed film. In addition, the gas barrier film exhibits more excellent gas barrier properties. In this embodiment, the method for measuring the arithmetic mean roughness Ra and the maximum peak height Rp is not particularly limited. For example, the arithmetic mean roughness Ra and the surface roughness Rp can be measured by using AFM (SPM-9700, manufactured by Shimadzu Corporation), a probe (NCHR-20, manufactured by NanoWorld), in the dynamic mode, for a 10 μm × 10 μm range of the underlayer surface, and calculating the arithmetic mean roughness (Ra) and the maximum peak height (Rp).

[0044] In addition, the gas barrier film of this embodiment preferably has a total light transmittance of 80% or more, and more preferably 85% or more. The gas barrier film of this embodiment has an oxide mixed film laminated thereon, and the thickness of the oxide mixed film is 10 to 250 nm. However, the gas barrier film exhibits excellent total light transmittance and excellent transparency. In this embodiment, the total light transmittance can be measured by using a haze meter (NDH4000, manufactured by Nippon Denshoku Industries Co., Ltd.) according to the method specified in JIS K 7361-1:1997 (corresponding to ISO13468-1:1996).

[0045] In addition, in order to protect the oxide mixed film, a resin layer may be provided on the gas barrier film. The resin layer can be produced by an active energy ray-curable resin-based paint, a thermosetting resin-based paint, or the like. The resin layer can be laminated by coating with an acrylic resin, a urethane resin, an epoxy resin, or the like so that the transparency of the gas barrier film is hardly impaired. The film thickness of the resin layer is preferably 5 μm or less so that the gas barrier film does not curl or the like.

[0046] Further, a protective film (for example, several tens of μm) may be provided on the oxide mixed film. The protective film is not particularly limited. For example, the protective film is a film in which an adhesive layer is provided on an olefin-based resin film such as polyethylene or polypropylene, or a film in which an adhesive layer such as an acrylic resin or a urethane resin is applied to a resin film such as PET. The protective film is for temporarily protecting the surface of the gas barrier film, and since it is premised to be peeled off, transparency is not required. Further, in order to prevent damage to the gas barrier film during peeling, the adhesive force of the protective film is preferably 0.5 N / 25 mm or less. By providing a flexible protective resin layer or protective film, the oxide mixed film is mechanically prevented from being scratched or the like, and the gas barrier property is less likely to deteriorate.

[0047] In the gas barrier film of the present embodiment, a resin film provided with a functional layer such as a transparent conductive layer can be laminated on the oxide mixed film via a known adhesive layer or adhesive layer. Thereby, the gas barrier film can be suitably used for applications such as touch panels such as electronic paper, solar cells, and organic EL displays.

[0048] As described above, the gas barrier film of the present embodiment has an underlayer provided on a base material. As a result, even if there are dust or fine protrusions on the base material, the surface of the base material can be flattened, and an oxide mixed film is provided on the flattened underlayer. As a result, pinholes starting from the dust or protrusions are less likely to occur, and the gas barrier film can exhibit excellent gas barrier properties. Further, the gas barrier film is provided with an oxide mixed film having a thickness of 5 to 250 nm. Such a gas barrier film provided with an oxide mixed film exhibits excellent gas barrier properties and excellent transparency because the thickness of the oxide mixed film is small.

Example

[0049] Hereinafter, the present invention will be described more specifically by way of examples. The present invention is not limited to these examples at all.

[0050] (Example 1) A PET film (thickness: 125 μm) was used as a base material, and an organic-inorganic composite layer (NH-1000G: manufactured by Nippon Soda Co., Ltd.) was applied as an underlayer on the base material by a wet coating method. 。Next Then, on the base material provided with the underlayer, reactive sputtering was performed under the conditions that the introduction ratio of Ar gas to O2 gas was 9.0:1.0, the film formation pressure was 0.14 Pa, and the input power density was 3.3 W / cm 2 to form a ZTO film (refractive index: 2.01) having a thickness of 33 nm as an oxide mixed film, and a gas barrier film was produced. The tin content of tin oxide in the ZTO film was 6.8 at%, the total oxygen content contained in each oxide was 44.9 at%, and the balance was zinc. Also 、Calculate the arithmetic mean roughness (Ra) and the maximum peak height (Rp) were measured. Each atomic number can be measured by using AFM (SPM-9700, manufactured by Shimadzu Corporation), probe (NCHR-20, manufactured by NanoWorld) in the dynamic mode, and measuring the arithmetic mean roughness (Ra) and the maximum peak height (Rp) for a range of 10 μm × 10 μm on the surface of the underlayer.

[0051] <Arithmetic mean roughness Ra and maximum peak height Rp> The arithmetic mean roughness Ra and the maximum peak height Rp were measured for a 10 μm × 10 μm area on the surface of the gas barrier film in dynamic mode using an AFM (SPM - 9700, manufactured by Shimadzu Corporation) and a probe (NCHR - 20, manufactured by NanoWorld), and were measured by calculating the arithmetic mean roughness Ra and the maximum peak height Rp.

[0052] <Amount of inorganic components> Among the underlying layers, the amount of inorganic components on the surface where the oxide mixed film was formed was measured. Specifically, from the surface on the side in contact with the oxide mixed film towards the substrate side, the amount of inorganic components in the underlying layer in the thickness direction of the underlying layer was measured by X - ray photoelectron spectroscopy (XPS). The XPS measurement was performed using an X - ray photoelectron spectrometer (PHI5000 VersaProbe2, manufactured by ULVAC - PHI, Inc.).

[0053] <Water vapor transmission rate (WVTR)><The water vapor transmission rate (%) was measured by the "differential pressure method (ISO 15106 - 5)".

[0054] (Examples 2 to 18, Comparative Examples 1 to 7) A gas barrier film was produced in the same manner as in Example 1, except that the conditions described in Table 1 were changed. In Table 1, "a" indicates the zinc content in the oxide mixed film, and "b" indicates the total content of metals other than zinc (tin, aluminum, silicon) in the oxide mixed film.

[0055]

Table 1

[0056] As shown in Table 1, for the gas barrier films of Examples 1 to 18, the thickness of the oxide mixed film was small and the transparency was excellent in all cases. Also, the gas barrier films of Examples 1 to 18 exhibited excellent gas barrier properties. On the other hand, the gas barrier films of Comparative Examples 1 to 7 had poor gas barrier properties.

Claims

1. A gas barrier film comprising a substrate, an underlayer provided on the substrate, and an oxide mixed film provided on the underlayer, wherein the arithmetic mean roughness (Ra) on the surface of the gas barrier film is 1.0 nm or less, and the maximum peak height (Rp) is 2.3 to 10.0 nm, the oxide mixed film is a single layer, when measuring the silicon component of the underlayer in the thickness direction of the underlayer by X-ray photoelectron spectroscopy (XPS) from the surface of the underlayer in contact with the oxide mixed film toward the substrate side, the atomic number concentration of the silicon component on the surface in contact with the oxide mixed film is 18 to 40 at%, a gas barrier film.

2. The gas barrier film according to Claim 1, wherein the thickness of the oxide mixed film is 5 to 250 nm.

3. The oxide mixed film includes a first element and a second element, The ratio ((b) / (a + b)) of the atomic number (b) of the second element to the total amount ((a + b)) of the atomic number (a) of the first element and the atomic number (b) of the second element is 0.08 to 0.

42. The gas barrier film according to Claim 1 or 2.

4. The first element is zinc oxide, The second element is an oxide of at least one metal selected from tin, aluminum, and silicon, The gas barrier film according to Claim 3, wherein the oxide mixed film is composed of a mixture of the first element and the second element.

5. The gas barrier film according to any one of Claims 1 to 4, wherein the underlayer contains an organic-inorganic composite oxide.

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