Atomic object confinement device with radio frequency electrode shaping for periodic boundary conditions

Abstract

To provide atomic object confinement apparatuses with RF busses and systems comprising atomic object confinement apparatuses with RF busses.SOLUTION: An example atomic object confinement apparatus comprises RF rail electrodes and an RF bus electrode(s). The RF rail electrodes form a periodic array of confinement segments within a central zone of the atomic object confinement apparatus, and the RF bus electrode(s) are disposed in a perimeter zone disposed about the central zone. The RF rail electrodes and the RF bus electrode(s) are configured to generate a substantially periodic array of trapping regions when an oscillating voltage signal is applied to the RF rail electrodes and the RF bus electrode(s).SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims priority to U.S. Application No. 63 / 265,211, filed on December 10, 2021, the entire content of which is incorporated herein by reference.

[0002] Various embodiments relate to a multi - dimensional atomic object confinement apparatus. For example, various embodiments relate to a two - dimensional atomic object confinement apparatus having a periodic array of trap regions. For example, various embodiments relate to a quantum computer comprising a multi - dimensional atomic object confinement apparatus.

Background Art

[0003] A quantum charge - coupled device (QCCD) architecture is a type of architecture that can be used for large - scale quantum computing. According to the QCCD architecture, a plurality of atomic objects are confined by an atomic object confinement apparatus, and the controlled evolution of the quantum states of the atomic objects is used to perform quantum computing. In various scenarios, the atomic object confinement apparatus may comprise a periodic array of trap regions. For example, the periodic array of trap regions may enable parallelization of various operations such as transport, cooling, or quantum - bit gate operations. However, the edges of the array lead to perturbations of the electric and / or magnetic fields within the atomic object confinement apparatus.

[0004] These perturbations cause perturbations in the periodicity of the placement of the positions where atomic objects are confined from cell to cell in a periodic array, and are shared or distributed (i.e., broadcast) across multiple cells of the array with the intention of performing simultaneous operations within multiple cells, and can affect the accuracy of operations performed by any other applied field, such as a laser, or an electrode voltage, microwave, or magnetic field. Also, these perturbations cause changes in the motion frequencies of atomic objects in different cells of the periodic array and can similarly affect the accuracy of broadcast operations. Through the noted efforts, ingenuity, and innovation, many deficiencies of such previous atomic object confinement devices and systems incorporating such atomic object confinement devices have thus been solved by developing solutions structured in accordance with embodiments of the present invention, many examples of which are described in detail herein.

SUMMARY OF THE INVENTION

MEANS FOR SOLVING THE PROBLEM

[0005] Exemplary embodiments provide a multidimensional atomic object confinement device and / or a system comprising a multidimensional atomic object confinement device formed from a substantially periodic array of one-dimensional confinement segments connected via junctions. In various embodiments, the one-dimensional confinement segments, also referred to herein as legs, of the substantially periodic array are disposed within a central zone of the atomic object confinement device. The substantially periodic array is defined at least in part by a plurality of radio frequency (RF) rail electrodes. When an oscillating voltage signal (e.g., an RF oscillating voltage signal) is applied to the RF rail electrodes, the RF rail electrodes generate a trapping pseudopotential in the form of an array of linear trapping regions and junctions within the central zone of the atomic object confinement device. Due to the finite length and / or presence of edges of the RF rail electrodes, the trapping pseudopotential within the central zone of the atomic object confinement device includes a perturbation to the periodicity of the trapping pseudopotential and / or the array of trapping regions.

[0006] Various embodiments include one or more RF bus electrodes in addition to the RF rail electrodes. The one or more RF bus electrodes are disposed at least partially around a central zone of the atomic object confinement device. For example, in various embodiments, the RF bus electrodes are disposed in a peripheral zone disposed around the central zone of the atomic object confinement device. The RF bus electrodes are configured such that perturbations to the periodicity of an array of trapping regions formed by a trapping pseudopotential in the central zone of the atomic object confinement device are reduced and / or mitigated when an oscillating voltage signal is applied to the one or more RF bus electrodes (in addition to the oscillating voltage signal being applied to the one or more RF rail electrodes). For example, in various embodiments, the RF bus electrodes are configured such that the array of trapping regions and / or the trapping pseudopotential in the central zone of the atomic object confinement device are substantially periodic when an oscillating voltage signal is applied to the one or more RF bus electrodes.

[0007] In various embodiments, the trap pseudopotential is used to confine one or more atomic objects (e.g., within each trap region of an array of trap regions) by an atomic object confinement device. In an exemplary embodiment, the atomic object confinement device is an ion trap such as a surface ion trap, a Paul trap, and / or the like. In an exemplary embodiment, the atomic object is an ion, an atom, a polyion or polyatomic cluster or crystal, a neutral or ionic molecule, and / or the like. In an exemplary embodiment, the atomic object confinement device is part of a quantum processor and / or a quantum computer, and one or more atomic objects confined by the atomic object confinement device are used as qubits of the quantum processor and / or the quantum computer.

[0008] According to a first aspect, an atomic object confinement device is provided. In an exemplary embodiment, the atomic object confinement device comprises a plurality of electrodes. The plurality of electrodes includes a plurality of RF rail electrodes. At least a portion of the plurality of RF rail electrodes is arranged and configured to define a periodic array of confinement segments. The plurality of RF rail electrodes is configured to generate a pseudopotential in the form of an array of trap regions configured such that when an oscillating voltage signal is applied thereto, the plurality of RF rail electrodes includes at least one atomic object within each trap region of the array of trap regions. The plurality of electrodes further includes one or more RF bus electrodes disposed in at least a portion of the peripheral zone of the atomic object confinement device. The one or more RF bus electrodes are configured such that when an oscillating voltage signal is applied thereto, the one or more RF bus electrodes substantially periodically arranges the array of trap regions.

[0009] In an exemplary embodiment, the plurality of RF rail electrodes are arranged in a periodic arrangement, the periodic arrangement being at least partially defined by a tiling cell.

[0010] In one exemplary embodiment, a portion of the one or more RF bus electrodes includes one or more perimeter cells that are at least partial copies of the tiling cells disposed in the perimeter zone.

[0011] In one exemplary embodiment, the one or more RF bus electrodes include a continuous electrode that extends substantially along at least one edge of the peripheral zone.

[0012] In one exemplary embodiment, the continuous electrode is substantially rectangular in shape.

[0013] In one exemplary embodiment, the continuous electrodes each include an electrode portion that extends along a respective edge of the peripheral zone.

[0014] In one exemplary embodiment, each electrode portion is either (a) substantially rectangular, or (b) has beveled edges.

[0015] In one exemplary embodiment, the at least one electrode segment has a width that varies along the length of the at least one electrode segment.

[0016] In one exemplary embodiment, the at least one electrode portion is narrowest in the middle of the at least one electrode portion.

[0017] In one exemplary embodiment, the one or more RF bus electrodes include one or more corner features, each corner feature disposed at a respective corner of the peripheral zone.

[0018] In an exemplary embodiment, the one or more RF bus electrodes include a plurality of individual RF bus electrodes.

[0019] In one exemplary embodiment, each individual RF bus electrode of the plurality of individual RF bus electrodes extends from a respective end of a respective one or pair of the plurality of RF rail electrodes.

[0020] According to another aspect, an atomic object confinement device is provided. In an exemplary embodiment, the atomic object confinement device includes one or more RF rail electrodes and one or more RF bus electrodes. At least a subset of the one or more RF rail electrodes is disposed within a central zone of the atomic object confinement device, and the RF bus electrodes are disposed in a peripheral zone of the atomic object confinement device. The peripheral zone is disposed around the central zone. The one or more RF rail electrodes and the one or more RF bus electrodes are configured such that when an oscillating voltage signal is applied to the one or more RF rail electrodes and the one or more RF bus electrodes, a periodic array of trap regions is generated within at least a portion of the central zone of the atomic object confinement device.

[0021] According to yet another aspect, a quantum computer is provided. In an exemplary embodiment, the quantum computer includes an atomic object confinement device. The atomic object confinement device includes a plurality of electrodes. The plurality of electrodes includes a plurality of RF rail electrodes. At least a portion of the plurality of RF rail electrodes is arranged and configured to define a periodic array of confinement segments. The plurality of RF rail electrodes is configured to generate an array of trap regions such that when an oscillating voltage signal is applied thereto, at least one atomic object is accommodated within each trap region of the array of trap regions. The plurality of electrodes further includes one or more RF bus electrodes disposed in at least a portion of a peripheral zone of the atomic object confinement device. The one or more RF bus electrodes are configured such that when an oscillating voltage signal is applied thereto, the one or more RF bus electrodes cause the array of trap regions to be substantially periodic.

[0022] In an exemplary embodiment, the quantum computer further includes a controller and a voltage source, and the controller is configured to cause the voltage source to generate an oscillating voltage signal.

[0023] In one exemplary embodiment, the quantum computer further comprises a manipulation source and one or more optical elements configured to direct a manipulation signal generated by the manipulation source such that the manipulation signal is incident on two or more locations within the substantially periodic array of trapping regions, the two or more locations being at respective identical points in a period of the substantially periodic array of trapping regions.

[0024] In an exemplary embodiment, the atomic object confinement device is configured to confine two or more atomic objects, and the manipulation signal is configured to perform an operation on at least two of the two or more atomic objects, each of the at least two atomic objects being positioned at a respective one of the two or more locations when the manipulation signal is incident on the two or more locations.

[0025] In one exemplary embodiment, the plurality of RF rail electrodes are arranged in a periodic arrangement, the periodic arrangement being defined at least in part by tiling cells, and a portion of one or more RF bus electrodes including one or more peripheral cells that are at least partial copies of the tiling cells arranged in the peripheral zone.

[0026] In one exemplary embodiment, the one or more RF bus electrodes include a continuous electrode that extends substantially along at least one edge of the peripheral zone.

[0027] In an exemplary embodiment, the one or more RF bus electrodes include a plurality of individual RF bus electrodes.

[0028] The invention is described in general terms and with reference to the accompanying drawings, which are not necessarily to scale. [Brief explanation of the drawings]

[0029] [Figure 1] FIG. 1 illustrates an exemplary atomic object confinement apparatus, according to an exemplary embodiment. [Figure 1A] 2 is a detailed view of a portion of the exemplary atomic object confinement apparatus shown in FIG. 1. [Figure 1B] 10A-10C illustrate variations in confinement caused by trap pseudopotentials at specific locations within an atomic object confinement device that does not include an RF bus and at specific locations within an atomic object confinement device of an exemplary embodiment that includes an RF bus. [Figure 2] FIG. 10 illustrates another exemplary atomic object confinement apparatus, in accordance with an exemplary embodiment. [Figure 3] FIG. 1 illustrates an exemplary atomic object confinement apparatus, according to an exemplary embodiment. [Figure 4] FIG. 10 illustrates another exemplary atomic object confinement apparatus, in accordance with an exemplary embodiment. [Figure 5] FIG. 1 is a schematic diagram illustrating an exemplary quantum computing system in accordance with various embodiments. [Figure 6] FIG. 1 is a schematic diagram of an exemplary controller for a quantum computer, according to various embodiments. [Figure 7] FIG. 1 is a schematic diagram of an exemplary computing entity of a quantum computer system that may be used by an exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0030] Next, the present invention will be described in more detail below with reference to the accompanying drawings, in which some, but not all, embodiments of the present invention are illustrated. In fact, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The phrase "or" (also denoted " / ") is used herein in both an alternative and a conjunctive sense, unless otherwise stated. The terms "exemplify" and "exemplary" are used as examples that do not indicate a quality level. The terms "generally" and "about" refer, unless otherwise stated, within the limits of engineering and / or manufacturing tolerances and / or within the limits of the user's measurement capabilities. Throughout, like numbers refer to like elements.

[0031] In various embodiments, a multidimensional (e.g., two-dimensional) atomic object confinement device is provided. The multidimensional atomic object confinement device comprises a plurality of electrodes. In various embodiments, the plurality of electrodes includes a plurality of RF rail electrodes. The plurality of RF rail electrodes at least partially define a periodic array of one-dimensional confinement segments (also referred to herein as legs). In various embodiments, the periodic array of one-dimensional confinement segments is disposed substantially within a central zone of the atomic object confinement device. For example, substantially all and / or a majority of the periodic array of confinement segments may be disposed within the central zone, while a smaller portion of the periodic array of confinement segments may be disposed within a peripheral zone of the atomic object confinement device. The one-dimensional confinement segments are connected via junctions such that atomic objects confined by the atomic object confinement device can be transported between respective segments of the one-dimensional confinement segments through corresponding junctions. Each one-dimensional confinement segment of the periodic array of one-dimensional confinement segments is configured to trap an atomic object substantially within a one-dimensional trap confinement region. The substantially one-dimensional trapping region is generated and / or formed by applying an oscillating (RF) voltage signal to RF rail electrodes that (at least partially) define a periodic array of confinement segments. In particular, application of the oscillating voltage signal to the RF rail electrodes causes generation of a trapping pseudopotential that is configured to confine atomic objects within the periodic array of confinement segments.

[0032] Because the periodic array of confinement segments is finite and / or has edges, effects caused by the edges of the periodic array of confinement segments result in perturbations of the periodicity of the trapping pseudopotential within the central region of the atomic object confinement device. In other words, due to perturbations caused by array edge effects, the array of trapping regions is generally quasi-periodic within the central zone, rather than substantially periodic. These perturbations reduce the ability to efficiently perform parallel operations based on the topology of the array of trapping regions with high fidelity. For example, the perturbations affect the periodicity of the electric and / or magnetic fields throughout the atomic object confinement device. These perturbations can cause changes in the location of where atomic objects are confined from cell to cell in the periodic array, affecting the alignment of lasers and the accuracy of broadcast DC signals. These perturbations can also cause changes in the frequency of motion of atomic objects within different cells of the periodic array, affecting the accuracy of operations performed by broadcast lasers or any other applied fields, such as microwaves or magnetic fields. Therefore, a technical problem exists: how to mitigate array edge effects on the operation of atomic object confinement devices.

[0033] Various embodiments provide technical solutions to these technical problems. For example, in various embodiments, an atomic object confinement device includes an RF bus configured to mitigate array edge effects such that an array of trapping regions in a central zone of the atomic object confinement device is substantially periodic when an (RF) oscillating voltage signal is applied thereto. For example, in various embodiments, the plurality of electrodes of the atomic object confinement device includes one or more RF bus electrodes in addition to RF rail electrodes. In various embodiments, the one or more RF bus electrodes are disposed in a peripheral zone disposed around the central zone (which generally includes and / or houses the periodic array of confinement segments). The RF bus electrode is configured such that a trapping pseudopotential in a central portion of the atomic object confinement device is substantially periodic when an oscillating voltage signal is applied thereto. For example, the RF bus electrode is configured such that perturbations to the periodicity of the periodic array of trapping regions are reduced and / or mitigated when an oscillating voltage signal is applied thereto. For example, electric and / or magnetic fields generated by application of an oscillating voltage signal to one or more RF bus electrodes cancel, reduce, and / or mitigate at least a portion of edge effect perturbations that affect a central portion of the atomic object confinement device and are caused by the finite size of the periodic array of confinement segments. Accordingly, various embodiments provide technical improvements to the fields of atomic object confinement devices, quantum processors, quantum computers, and / or the like.

[0034] Furthermore, various embodiments provide a system comprising a multi-dimensional atomic object confinement device. For example, various embodiments provide a quantum processor or a quantum computer comprising a multi-dimensional atomic object confinement device comprising a plurality of RF rail electrodes and one or more RF bus electrodes configured to generate a substantially periodic trap pseudo-potential within a central zone of the atomic object confinement device and / or a substantially periodic array of trap regions. For example, the system may be a quantum processor configured to perform parallel operations to shorten the execution time of a quantum circuit so that a deeper quantum circuit can be implemented within the coherence time of a qubit (e.g., a quantum bit) of the quantum processor.

[0035] In various embodiments, the trap pseudo-potential is used to confine one or more atomic objects by an atomic object confinement device. For example, the trap pseudo-potential may form a substantially periodic array of trap regions within the central zone such that the atomic objects can be confined within each of the trap regions of the substantially periodic array of trap regions. In an exemplary embodiment, the atomic object confinement device is an ion trap such as a surface ion trap, a Paul trap, and / or the like. In an exemplary embodiment, the atomic object is an ion, an atom, a multi-ion or multi-atom cluster or crystal, a neutral or ionic molecule, a population of neutral or ionic molecules, and / or the like. In an exemplary embodiment, the atomic object confinement device is part of a quantum processor and / or a quantum computer, and the one or more atomic objects confined by the atomic object confinement device are used as qubits of the quantum processor and / or the quantum computer.

[0036] FIG. 1 illustrates an atomic object confinement device 100 according to an example embodiment. In various embodiments, atomic object confinement device 100 comprises a plurality of electrodes. The plurality of electrodes includes an RF rail electrode 122 and an RF bus electrode 112. For example, atomic object confinement device 100 comprises a central zone 120 that includes a plurality of RF rail electrodes 122. The plurality of RF rail electrodes 122 at least partially define a periodic array of confinement segments 132. For example, atomic object confinement device 100 comprises an RF bus electrode 112 disposed within a peripheral zone 116 of atomic object confinement device 100. Peripheral zone 116 is disposed around (e.g., around) central zone 120. In various embodiments, atomic object confinement device 100 is configured such that atomic objects can be trapped and / or confined (e.g., within respective trapping regions) and / or operations and / or functions can be performed on atomic objects disposed within the central zone of atomic object confinement device 100. However, atomic objects are generally not trapped and / or confined within the peripheral zone 116 of atomic object confinement device 100 .

[0037] As pointed out above, the RF rail electrode 122 at least in part defines a periodic array of confinement segments 132. FIG. 1A is a detailed view of box 150 of FIG. 1. As shown in FIG. 1A, the plurality of electrodes of the atomic object confinement apparatus 100 further includes, in various embodiments, a sequence and / or series 154 (e.g., 154A, 154B, 154C) of trap and / or transport (TT) electrodes 156 (e.g., 156A, 156B, 156C, 156D). When an (RF) oscillating voltage signal is applied to the RF rail electrode 122, a trap pseudopotential is generated that is configured to trap and / or confine atomic objects within the one-dimensional trap region 130 of the array of trap regions. The one-dimensional trap region includes a radio frequency null. The radio frequency null is a one-dimensional path defined by the direction of the weakest pseudopotential gradient. At several points along the radio frequency null, the pseudopotential is substantially equal to zero. Thus, the radio frequency null forms a stable one-dimensional trap region 130. The trap regions of the atomic object confinement apparatus are substantially defined by their respective radio frequency nulls. For example, the radio frequency null along the one-dimensional trap region 130 defines a transport path along the trap region along which atomic objects can be transported along the length of the trap region.

[0038] In particular, the sequence and / or series 154 of RF rail electrodes 122 and TT electrodes 156 form a confinement segment 132 or a periodic array of legs of the atomic object confinement device 100 (e.g., within the central zone 120). When an (RF) oscillating voltage signal is applied to the RF rail electrodes 122, an array of trap regions 130 is generated. For example, the atomic object can be stabilized at each position within the array of trap regions 130 that is a particular distance (e.g., from about 20 μm to about 200 μm) above the upper surface of the atomic object confinement device 100 (e.g., the upper surface on the same plane as the TT electrodes 156 and the RF rail electrodes 122). In other words, the sequence and / or series 154 of RF rail electrodes 122 and TT electrodes define and / or form a physical and / or tangible periodic array of confinement segments, and the application of the oscillating voltage to the RF rail electrodes 122 causes the formation and / or generation of a trap pseudo-potential in the form of an array of trap regions.

[0039] In various embodiments, the TT electrodes 156 are configured to generate potential wells that cause transport of atomic objects along the corresponding one-dimensional trapping regions 130 and / or maintain atomic objects at respective selected positions along the one-dimensional trapping regions 130. In various embodiments, the RF rail electrodes 122 each define a respective longitudinal axis 124 (e.g., 124A, 124B). In various embodiments, each sequence and / or series 154 of TT electrodes 156 extends substantially parallel to the respective longitudinal axis 124 of the corresponding RF rail electrode 122 for at least a portion of the length of the sequence and / or series of TT electrodes and / or RF rail electrode. Each sequence and / or series 154 of TT electrodes 156 includes multiple TT electrodes. The TT electrodes may have various widths (e.g., in a direction defined by the respective longitudinal axis 124 of the corresponding RF rail electrode 122) and / or shapes. For example, the TT electrode 156D is narrower in the direction defined by the respective longitudinal axis 124A compared to the TT electrode 156C. In one exemplary embodiment, each leg and / or confinement segment comprises two RF rail electrodes 122A, 122B and three sequences and / or series 154A, 154B, 154C of TT electrodes 156. For example, the first sequence and / or series 154A may be disposed at least partially along the outer edge of the first RF rail electrode 122A, the second sequence and / or series 154B of TT electrodes 156 may be disposed between the first RF rail electrode 122A and the second RF rail electrode 122B, and the third sequence and / or series 154C of TT electrodes 156 may be disposed at least partially along the outer edge of the second RF rail electrode 122B. In various embodiments, each of the TT electrodes 156 is formed with a substantially coplanar upper surface that is substantially coplanar with the upper surface of the RF rail electrode 122.

[0040] In various embodiments, the TT electrode 156 has a control voltage signal applied thereto and is configured to generate a time-dependent potential field that causes an atomic object to be transported along a transport path (e.g., along an RF null) with respect to the trap region 130. In addition, the control voltage signal applied to the TT electrode 156 can cause an atomic object confined and / or trapped within the trap region 130 to cross orbits that substantially follow and / or are along the RF null. In various embodiments, the control voltage signal applied to the TT electrode 156 has a respective time evolution that is slow (at least in part due to the use of a low-pass filter in some cases) compared to the time evolution of the (RF) oscillating voltage signal applied to the RF rail electrode 122 (and RF bus electrode 112). In an exemplary embodiment, the phrase "slow" means that the highest frequency Fourier component having a substantially non-zero amplitude is slower than the frequency of the (RF) oscillating voltage signal applied to the RF rail electrode 122 (and RF bus electrode 112).

[0041] In various embodiments, the sequence and / or series 154 of TT electrodes 156 is arranged and / or configured within a zone and / or region 160 (e.g., 160A, 160B, 160C). The various electrodes 156 can have various sizes and / or shapes. For example, the electrode 156D is narrower than the electrode 156C in a direction substantially parallel to the adjacent RF rail electrode 122.

[0042] 1 , RF rail electrodes 122 define, at least in part, a periodic array of confinement segments within at least central zone 120 of atomic object confinement device 100. In various embodiments, the periodic array of confinement segments 132 is formed and / or generated by a periodic recurrence of tiling cells 135. For example, at least central zone 120 of atomic object confinement device 100 may be tiled with copies of tiling cells 135. For example, atomic object confinement device 100 may include a tessellation of tiling cells 135 within at least central zone 120.

[0043] 1, 2, 3, and 4, a tiling cell 135 is formed by a junction having four one-dimensional confinement segments extending therefrom at an angle θ between rotationally adjacent confinement segments of 90 degrees. In various embodiments, a tiling cell 135 may be formed by any number of confinement segments with various angles θ between rotationally adjacent confinement segments, as appropriate for the application. For example, in one exemplary embodiment, the periodic arrangement of copies of tiling cell 135 may form a periodic array of rectangular and / or square, triangular, hexagonal, and / or other shapes of confinement segments 132.

[0044] Due to various physical constraints (e.g., chip size, cryostat, and vacuum chamber size, etc.), atomic object confinement device 100 is not infinite in size, and the periodic array of confinement segments 132 does not extend infinitely. Array edge effects caused by the edges and / or terminations of the periodic array of confinement segments cause perturbations that affect the trapping pseudopotential and / or the periodicity of the array of trapping regions in the central zone 120 of atomic object confinement device 100. These perturbations cause changes in the location of where atomic objects are confined from cell to cell of the periodic array, which can affect the alignment of the laser and the accuracy of the broadcasted DC signal. These perturbations also cause changes in the frequency of motion of atomic objects in different cells of the periodic array, which can affect the accuracy of operations performed by the broadcasted laser or any other applied fields, such as microwaves or magnetic field gradients.

[0045] In this way, the array edge effect caused by the finite size of the periodic array of confinement segments reduces the fidelity with which parallel operations can be performed on the atomic object confined by the atomic object confinement device and / or significantly increases the technical complexity of implementing parallel operations (with a sufficiently high fidelity). For example, FIG. 1 shows an exemplary beam path 170, which is an exemplary path along which a manipulation signal (e.g., a laser beam) can propagate across the atomic object confinement device 100. Positions 172A and 172B are arranged at the same points in the phase of the periodicity of the periodic array of confinement segments and / or at respective same points in the period of the periodic array of confinement segments. For the manipulation signal propagating along the beam path 170 to efficiently perform parallel operations on the atomic objects arranged at positions 172A and 172B respectively, it is desirable that the trap pseudo-potentials be substantially identical at positions 172A and 172B. Since positions 172A and 172B are arranged at the same points in the phase of the periodicity of the periodic array of confinement segments 132, it may also be expected or assumed that positions 172A and 172B are arranged at the same points in the phase of the periodicity of the array of trap regions 130. However, the perturbation caused by the array edge effect of the periodic array of confinement segments 132 causes a difference in the trap pseudo-potentials at positions 172A and 172B that is significant enough to adversely affect the fidelity of the parallel operations being performed.

[0046] Various embodiments of the atomic object confinement device 100 include an RF bus 110 disposed within a peripheral zone 116. The peripheral zone 116 is disposed around a central zone 120 of the atomic object confinement device 100. In FIG. 1 , the peripheral zone 116 is illustrated as the area between the dashed rectangles. In various embodiments, the RF bus 110 includes at least one RF bus electrode 112. In various embodiments, the RF bus 110 includes one or more at least partial peripheral cells 114 (referred to herein as (partial) peripheral cells). For example, the (partial) peripheral cells 114 include RF rail electrodes 122 and possibly TT electrodes 156 that are copies of respective portions of the tiling cells 135. In an exemplary embodiment, the (partial) peripheral cells 114 do not include TT electrodes 156 or include TT electrodes of a different topology and / or geometry than the tiling cells 135 disposed in the central zone 120 of the atomic object confinement device 100. However, the (partial) perimeter cells 114 are generally not used to perform operations on the atomic object. For example, the RF bus 110 of the atomic object confinement device 100 includes rows of (partial) perimeter cells 114 that are adjacent to and / or abut the RF bus electrodes 112. The (partial) perimeter cells 114 maintain and / or have the same topology and / or geometry as the confinement segments 132 in the central zone 120 of the atomic object confinement device 100. In various embodiments, the RF bus 110 may include one or more rows / columns of (partial) perimeter cells and / or full perimeter cells, depending on the application.

[0047] In various embodiments, the RF bus electrode 112 is a continuous RF bus electrode. As used herein, a continuous RF bus electrode extends substantially along the length of the side or edge of the surrounding zone 116 of the central zone 120. For example, the RF bus electrode 112 has a length that is substantially equal to (e.g., not substantially less than) the corresponding side or edge of the surrounding zone 116. For example, one RF bus electrode 112 extends along the side or edge of the surrounding zone 116.

[0048] In the embodiment illustrated in FIG. 1, one or more RF bus electrodes 112 each include two substantially rectangular RF bus electrodes 112 that extend along the respective edges or sides of the surrounding zone 116 of each atomic object confinement device 100. For example, in the illustrated embodiment, the RF bus electrode 112 extends for the length of the opposing edges or sides of the surrounding zone 116 of the atomic object confinement device 100 (e.g., the sides defined by a constant x value when given the coordinates defined by FIG. 1). In one example, an additional RF bus electrode 112 extends for the length of the other opposing edges or sides of the surrounding zone 116 (e.g., the sides defined by a constant y value when given the coordinates defined by FIG. 1). In an exemplary embodiment, a single RF bus electrode 112 is formed from a substantially rectangular component or electrode portion and extends around the entirety of the surrounding zone 116 and / or around the entire periphery of the central zone 120.

[0049] In various embodiments, the RF bus 110 is configured such that when an (RF) oscillation signal is applied thereto (e.g., to the RF bus electrode 112 and the RF rail electrodes 122 of the (partial) surrounding cell 114), the perturbation caused by the array edge effect on the periodicity of the array of trap regions 130 is reduced and / or mitigated such that the trap pseudo-potential within at least a portion of the array of trap regions 130 and / or the central zone 120 is substantially periodic.

[0050] FIG. 1B presents plots 190 that illustrate height variations at respective center points 142 of horizontal legs (and / or linear / one-dimensional trap segments) 140 and plots 192 that illustrate confinement (such as represented by the Laplacian of the trap pseudopotential) variations when an oscillating RF signal is supplied to RF rail electrodes 122 within central region 120 but not applied to electrodes of RF bus 110 (e.g., RF rail electrodes 122 disposed in peripheral zone 116 and RF bus electrodes 112). In other words, plots 190, 192 respectively illustrate the height of the atomic object above the surface of the atomic object confinement device caused by the trap pseudopotential at center point 142 of horizontal leg 140 in an atomic object confinement device without an RF bus and the variations in confinement. As can be seen by looking at plots 190, 192, the pseudopotential varies significantly between horizontal legs 140. For example, as can be seen by looking at plot 192, the Laplacian of the trap pseudopotential is significantly different at point 172A compared to point 172B.

[0051] Plot 196 illustrates height variations, and plot 198 illustrates variations in confinement (as represented by the Laplacian of the trap pseudo-potential) at the respective center points 142 of the horizontal legs (and / or linear / one-dimensional trap segments) 140 when an oscillating RF signal is supplied to the RF rail electrodes 122 within the central zone 120 and applied to the RF bus 110 (e.g., the RF rail electrodes 122 and RF bus electrodes 112 of the surrounding zone 116). In other words, plots 196, 198 respectively illustrate the height of the atomic object above the surface of the atomic object confinement device caused by the trap pseudo-potential at the center point 142 of the horizontal leg 140 in the atomic object confinement device 100 without the RF bus 110 and the variations in confinement. As can be seen by looking at plots 196, 198, the confinement varies very little across the trap region as shown in FIG. 1. For example, as can be seen by looking at plot 198, the Laplacian of the trap pseudo-potential is significantly more consistent at points 172A and 172B (e.g., compared to when the RF bus 110 is absent and / or not used as shown in plot 192). It should be understood that various other metrics may be exemplified and used to quantify the improved periodicity of the trap pseudo-potential in the atomic object confinement device 100 including the RF bus 110 compared to the atomic object confinement device 100 without the RF bus 110.

[0052] Various embodiments provide an atomic object confinement device that includes RF buses of various types and / or various shapes. Various embodiments provide a system that includes an atomic object confinement device that includes RF buses of various types and / or various shapes. For example, in various embodiments, the number and / or ratio of rows and / or columns of (partial) surrounding cells included in the RF bus may vary. In various embodiments, the RF bus does not include any (partial) surrounding cells. In various embodiments, the RF bus includes one or more continuous RF bus electrodes. In various embodiments, the RF bus includes a plurality of individual and / or discrete RF bus electrodes. Next, some additional exemplary embodiments of the RF bus and the atomic object confinement device including the RF bus are described with respect to FIGS. 2, 3, and 4.

[0053] FIG. 2 illustrates an exemplary embodiment of an atomic object confinement device 200 that includes an RF bus 210 that includes a plurality of individual or discrete RF bus electrodes 212. In the illustrated embodiment, the atomic object confinement device 200 includes a plurality of electrodes. The plurality of electrodes includes a plurality of individual or discrete RF bus electrodes 212, a plurality of RF rail electrodes 222, and a plurality of TT electrodes (similar to those shown in FIG. 1A). Some, and / or most, of the RF rail electrodes 222 are disposed within a central zone 220 of the atomic object confinement device 200, and some of the RF rail electrodes 222 are disposed within a surrounding zone 216 disposed around the central region 220 to form (partial) surrounding cells 214. The surrounding zone 216 is shown in FIG. 2 as the space between two dashed rectangles. Within the central zone 220 of the atomic object confinement device 200, the RF rail electrodes 222 define a periodic array of one-dimensional confinement segments 232.

[0054] When an (RF) oscillating voltage signal is applied to the RF rail electrode 222, a two-dimensional array of one-dimensional trap regions 230 is generated within the central zone 220. However, the periodicity of this array of trap regions 230 is substantially perturbed due to perturbations caused by an array edge effect corresponding to the edges of a two-dimensional periodic array of one-dimensional confinement segments 232. When the (RF) oscillating voltage signal is applied to both the RF rail electrode 222 and the RF bus 210 disposed in the central zone 220 (e.g., the RF rail electrode 222 and the RF bus electrode 212 disposed in the peripheral zone 216), a substantially periodic two-dimensional array of one-dimensional trap regions 230 is generated.

[0055] As illustrated in FIG. 2, in various embodiments, the RF bus electrodes 212 are individual and / or discrete RF bus electrodes 212. The individual and / or discrete RF bus electrodes 212 do not extend over the sides or the entire edge of the peripheral zone 214 along the periphery or sides and / or the surrounding edges of the central zone 220. For example, a plurality of individual and / or discrete RF bus electrodes 212 may be spaced apart from each other along one or more sides or edges of the peripheral zone 214. For example, in the illustrated embodiment, each individual and / or discrete RF bus electrode 212 extends from a single pair of RF rail electrodes 222. In other words, in the illustrated embodiment, each individual and / or discrete RF bus electrode 212 extends from a single confinement segment of the (partial) peripheral cell 214. In an exemplary embodiment, the RF bus electrodes 212 extend from one or more confinement segments of the respective (partial) peripheral cell 214. In an exemplary embodiment, the RF bus electrodes 212 extend from one or more confinement segments of the respective (partial) peripheral cell 214 without being physically or directly electrically coupled to the RF rail electrodes 222 of the respective (partial) peripheral cell 214 (e.g., separated by a gap or a ground metal). In an exemplary embodiment, the RF bus electrodes 212 are formed as a continuation of one or more confinement segments of the respective (partial) peripheral cell 214 such that the RF bus electrodes 212 are physically and / or directly electrically coupled to the RF rail electrodes 222.

[0056] In the illustrated embodiment, individual and / or discrete RF bus electrodes 212 are disposed along opposing sides or edges of peripheral zone 216. In various embodiments, individual and / or discrete RF bus electrodes 212 are disposed along three or four sides or edges of peripheral zone 216. In one exemplary embodiment, RF bus 210 includes individual and / or discrete RF bus electrodes 212 disposed along one or more sides or edges (e.g., opposing sides or edges) of peripheral zone 216 and may include continuous RF bus electrodes (e.g., similar to RF bus electrode 112) along one or more other sides or edges (e.g., other pairs of opposing sides or edges) of peripheral zone 216.

[0057] 2 illustrates the individual and / or discrete RF bus electrodes 212 as round, circular, and / or elliptical. However, in various embodiments, the individual and / or discrete RF bus electrodes 212 may have various shapes. For example, the individual and / or discrete RF bus electrodes 212 may be round, triangular, square, rectangular, polygonal, irregular, mimicking and / or resembling the topology and / or geometry of an RF rail electrode (e.g., the topology and / or geometry of the RF rail electrodes of tiling cell 135), and / or similar, as appropriate for the application and as appropriate for reducing and / or mitigating array edge effect perturbations to the periodicity of the periodic array of trapping regions 230 within central zone 220 of atomic object confinement device 200.

[0058] FIG. 3 illustrates an exemplary embodiment of an atomic object confinement apparatus 300 comprising an RF bus 310 that includes a continuous sloped edge RF bus electrode 312. For example, the atomic object confinement apparatus 300 includes a plurality of electrodes. The plurality of electrodes includes a continuous sloped edge RF bus electrode 312, a plurality of RF rail electrodes 322, and a plurality of TT electrodes (similar to those shown in FIG. 1A). Some (e.g., most) of the RF rail electrodes 322 are disposed within a central zone 320 of the atomic object confinement apparatus 300, and some of the RF rail electrodes 322 are disposed within a surrounding zone 316 (at least in part) disposed around the central zone 320, forming a (partial) surrounding cell 314. Within the central zone 320 of the atomic object confinement apparatus 300, the RF rail electrodes 322 define a periodic array of one-dimensional confinement segments 332.

[0059] When an (RF) oscillating voltage signal is applied to the RF rail electrodes 322 of the central zone 320, a two-dimensional array of one-dimensional trap regions 330 is generated. However, the periodicity of this array of trap regions 330 is substantially perturbed due to perturbations caused by an array edge effect corresponding to the edges of the two-dimensional periodic array of one-dimensional confinement segments 332. When an (RF) oscillating voltage signal is applied to both the RF rail electrodes 322 of the central zone 320 and the RF bus 310 (e.g., the RF rail electrodes 322 and the RF bus electrode 312 disposed in the surrounding zone 316), a substantially periodic two-dimensional array of one-dimensional trap regions 330 is generated.

[0060] As illustrated in FIG. 3, in various embodiments, the RF bus electrode 312 is a continuous sloped edge RF bus electrode 312. As described above, a continuous RF bus electrode extends substantially along the edge or side of the surrounding zone 316. As shown in FIG. 3, the sloped edge RF bus electrode 312 has a gradient or slope to one or both edges or sides 302, 304 of the RF bus electrode 312 (e.g., not a substantially rectangular shape similar to the RF bus electrode 112 illustrated in FIG. 1). For example, in an exemplary embodiment, the inner edge 302 of the RF bus electrode 312 is a function of both x and y when the coordinate definitions shown in FIG. 3 are provided. For example, in an exemplary embodiment, the outer edge 304 of the RF bus electrode 312 is a function of both x and y when the coordinate definitions shown in FIG. 3 are provided. In an exemplary embodiment, the inner edge 302 is constant with respect to each of one of x or y, and the outer edge 304 of the RF bus electrode 312 is a function of both x and y such that the width of the RF bus electrode 312 varies along its length. For example, a pair of the inner edges 302 of the RF bus electrode 312 may have a constant x value, and the other pair of the inner edges 302 of the RF bus electrode 312 may have a constant y value, and the outer edges 304 of all of the electrodes of the RF bus electrode 312 may be inclined, diagonal, and / or a (non-trivial) function of both x and y. In an exemplary embodiment, at the reflection symmetry axes 306, 308, the RF bus electrode 312 is the narrowest and / or the atomic object confinement device 300 is the narrowest. For example, in an exemplary embodiment, the RF bus electrode 312 is the narrowest (e.g., has the smallest width) at their midlines. In an exemplary embodiment, at the edges of the atomic object confinement device 300, the RF bus electrode 312 is the widest and / or the atomic object confinement device 300 is the widest. For example, in an exemplary embodiment, the RF bus electrode 312 is the widest at their distal ends.

[0061] In various embodiments, RF bus electrode 312 includes multiple continuous RF bus electrodes that each span and / or extend substantially along a respective side or edge of peripheral zone 316. In one exemplary embodiment, RF bus electrodes 312 on opposite sides or edges of peripheral zone 316 are mirror images of each other (e.g., reflected on respective reflective symmetry axes 306 or 308). In various embodiments, RF bus 310 includes multiple RF bus electrodes 312, with adjacent, touching, and / or abutting RF bus electrodes 312 that are not in direct electrical communication with each other (e.g., separated from each other by gaps or ground metal). In one exemplary embodiment, RF bus electrode 312 is one electrode that extends substantially into peripheral zone 316. For example, RF bus electrode 312 may be formed as a single electrode that extends throughout peripheral zone 316 and / or around the perimeter of central zone 320.

[0062] 4 illustrates an exemplary embodiment of an atomic object confinement device 400 comprising an RF bus 410 including RF bus electrodes 412 (e.g., 412A, 412B) that include corner features 418. For example, the atomic object confinement device 400 comprises a plurality of electrodes. The plurality of electrodes includes an RF bus electrode 412 that includes corner features 418, a plurality of RF rail electrodes 422, and a plurality of TT electrodes (similar to those shown in FIG. 1A ). Some (e.g., most) of the RF rail electrodes 422 are disposed within a central zone 420 of the atomic object confinement device 400, and some (or a small portion) of the RF rail electrodes 422 are disposed within a peripheral zone 416 that is (at least partially) disposed around the central zone 420 to form a (partial) peripheral cell 414. Within the central zone 420 of the atomic object confinement device 400, the RF rail electrodes 422 at least partially define a periodic array of one-dimensional confinement segments 432.

[0063] When an (RF) oscillating voltage signal is applied to the RF rail electrode 422 of the central zone 420, a two-dimensional array of one-dimensional trap regions 430 is generated. However, the periodicity of this array of trap regions 430 is substantially perturbed due to perturbations caused by array edge effects corresponding to the edges of the two-dimensional periodic array of one-dimensional confinement segments. When the (RF) oscillating voltage signal is applied to both the RF rail electrode 422 of the central zone 420 and the RF bus 410 (e.g., the RF rail electrode 422 and the RF bus electrode 412 (including the corner feature 418) disposed in the peripheral zone 416), a substantially periodic two-dimensional array of one-dimensional trap regions 430 is generated.

[0064] As illustrated in FIG. 4, in various embodiments, the RF bus electrode 412 is a continuous electrode including the corner feature 418. The corner feature 418 is disposed at the corner of the peripheral zone 416 and is an RF bus electrode and / or a portion of the RF bus electrode 412 that has a different topology and / or geometry compared to a portion of the RF bus electrode 412 that is not part of the corner feature 418 (e.g., a portion that substantially extends on the side or edge of the peripheral zone). For example, the first corner feature 418A illustrated in FIG. 4 extends outward beyond the outer edge 404A of the first RF bus electrode 412A and extends outward beyond the outer edge 404B of the second RF bus electrode 412B.

[0065] In an exemplary embodiment, the first and second RF bus electrodes 412A, 412B are portions of one continuous RF bus electrode that extend substantially around and / or peripherally to the surrounding zone 416. In an exemplary embodiment, the first and second RF bus electrodes 412A, 412B are formed as separate electrodes. In an exemplary embodiment, the first corner feature 418A is a part of the first and / or second RF bus electrodes 412A, 412B and / or a part of the continuous RF bus electrode that extends substantially into the surrounding area 416. In an exemplary embodiment, the corner feature 418 is formed as a separate RF bus electrode (e.g., separated from the RF bus electrode 412 that (substantially) extends along the side or edge of the surrounding area 416).

[0066] In an exemplary embodiment, the first RF bus electrode (and / or RF bus electrode portion) 412A extends substantially along the first side or edge 415A of the surrounding zone 416 of the atomic object confinement device 400, and the second RF bus electrode (and / or RF bus electrode portion) 412B extends substantially along the second side or edge 415B of the surrounding zone 416. The first and second sides or edges 415A, 415B of the surrounding zone 416 meet at a corner 417, abut and / or are in contact with each other.

[0067] In an exemplary embodiment, the first corner feature 418A disposed at the corner 417 is formed by changing the width of the RF bus electrodes 412A, 412B and / or otherwise changing the topology, geometry, and / or surface shape. For example, in the illustrated embodiment, the first corner feature 418A is formed by increasing the width of the first and second RF bus electrodes (and / or RF bus electrode portions) 412A, 412B near and / or adjacent to the corner 417.

[0068] In an exemplary embodiment, the phrase "near and / or adjacent to corner 417" is defined as being within an area or sector that extends away from, faces, and / or opens in a direction away from central region 420, and is formed by extending (virtual) line 406B from inner edge 402B of second RF bus electrode 412B and (virtual) line 406A from inner edge 402A of first RF bus electrode 412A. In an exemplary embodiment, the phrase "near and / or adjacent to corner 417" is defined as being within an area or sector that extends away from, faces, and / or opens in a direction away from central region 420, extends transversely to second edge 415B, and is formed by extending (virtual) line 408B from RF rail electrode 422 closest to corner 417 and (virtual) line 408A from RF rail electrode 422 closest to corner 417 by extending transversely to second edge 415A. In an exemplary embodiment, the phrase "near and / or adjacent to corner 417" is defined as being within an area or sector that is obliquely intersecting central region 420. For example, in an exemplary embodiment, the phrase "near and / or adjacent to corner 417" is defined as being within an area or sector formed by extending (virtual) line 409B outwardly from third edge 415C of peripheral region 416 and (virtual) line 409A outwardly from fourth edge 415D of peripheral region 416 where third and fourth edges 415C, 415D intersect.

[0069] In various embodiments, the RF bus is formed by combining various elements of RF buses 110, 210, 310, and / or 410. For example, in one exemplary embodiment, the RF bus includes a beveled-edge RF bus electrode with a corner feature. In another exemplary embodiment, the RF bus includes individual and / or discrete RF bus electrodes and corner features. In one exemplary embodiment, the RF bus includes individual and / or discrete RF bus electrodes that vary in size along the size of the atomic object confinement device, distance from a corner, distance from a center point of the atomic object confinement device, distance from an edge of a central zone, and / or the like.

[0070] Technical Advantages For large-scale quantum computations to be performed using a QCCD-based quantum processor, parallelization of various operations and / or functions is necessary. In particular, limitations on the number of electrical wires connecting the atomic object confinement device of a QCCD-based quantum processor (typically disposed within a cryostat and / or vacuum chamber) and the number of connection points or pins on the chip on which the atomic object confinement device is formed set an upper limit on the number of individually operable and / or controllable electrodes of the atomic object confinement device. In addition, executing a deep quantum circuit generally requires a large number of qubits on which a large number of operations and / or functions are performed. These operations and / or functions must be performed within the qubit coherence time. A technique for reducing the amount of time required to perform these operations and / or functions so that the deep quantum circuit can be executed within the qubit coherence time is to execute some of the operations and / or functions in parallel (to the extent permitted by the quantum circuit and / or the hardware used). Thus, a technical problem exists regarding how to enable parallel execution of operations and / or functions in a QCCD-based quantum processor.

[0071] One solution to these problems is to use an atomic object confinement device that includes a periodic array of confinement segments as the basic hardware of a QCCD-based quantum processor. For example, the periodicity of the array of confinement segments can be utilized to enable the parallelization of various operations and / or functions. However, since the periodic array of confinement segments is finite and / or has edges, the effects caused by the edges of the periodic array of confinement segments result in a perturbation of the periodicity of the trap pseudopotential within the central region of the atomic object confinement device. In other words, the finite size and / or edges of the periodic array of confinement segments result in a perturbation of the periodicity of the array of trap regions generated by applying an (RF) oscillating voltage signal to the RF rail electrodes that at least partially define the periodic array of confinement segments.

[0072] Perturbations to the periodicity of the array of trap regions reduce the ability to efficiently perform parallelization of operations with high fidelity. For example, the perturbations affect the periodicity of the electric and / or magnetic fields across the entire atomic object confinement device (e.g., its central region, peripheral region and / or near it, and / or similar locations). These perturbations can cause changes in the placement of the positions where the atomic objects are confined from cell to cell in the periodic array, and can affect the alignment of the laser and the accuracy of the broadcast DC signal (e.g., applied to TT electrode 156 as a control voltage signal). These perturbations also cause changes in the motion frequencies of the atomic objects within different cells of the periodic array, and can affect the accuracy of operations performed by any other applied fields such as the broadcast laser or microwave or magnetic field. Therefore, there is a technical problem of how to mitigate the array edge effects on the operation of the atomic object confinement device.

[0073] Various embodiments provide technical solutions to these technical problems. For example, in various embodiments, the plurality of electrodes of the atomic object confinement device includes one or more RF bus electrodes in addition to the RF rail electrodes. In various embodiments, the one or more RF bus electrodes are disposed in at least a portion of the peripheral region that is disposed around the central region and / or the periodic array of confinement segments. The RF bus electrode is configured such that the trap pseudo-potential within the central portion of the atomic object confinement device is substantially periodic when an oscillating voltage signal is applied thereto. For example, the RF bus electrode is configured such that the perturbation to the periodicity of the periodic array of trap regions is reduced and / or mitigated when an oscillating voltage signal is applied thereto. For example, the potential generated by the application of the oscillating voltage signal to the one or more RF bus electrodes affects the periodicity of the array of trap regions disposed within the central region of the atomic object confinement device and cancels, reduces, and / or mitigates at least a portion of the edge effect perturbation caused by the finite size of the periodic array of confinement segments. Accordingly, various embodiments provide a technical improvement to the field of atomic object confinement devices, quantum processors, quantum computers, and / or the like.

[0074] Exemplary quantum computer comprising an atomic object confinement device As described above, atomic object confinement devices 100, 200, 300, 400 may be part of a quantum processor of a quantum computer. For example, atomic objects trapped and / or confined by atomic object confinement devices 100, 200, 300, 400 may be used as qubits of a quantum processor. The configuration of RF bus electrodes and RF rail electrodes forming a periodic array of trapping regions (when (RF) oscillating voltage signals are applied to the RF bus electrodes and RF rail electrodes) enables efficient execution of parallel operations by the quantum processor. FIG. 5 presents a schematic diagram of an exemplary quantum computer system 500 including an atomic object confinement device 520 (e.g., atomic object confinement devices 100, 200, 300, 400, and / or the like) including an RF bus, according to one illustrative embodiment. In various embodiments, quantum computer system 500 comprises computing entity 10 and quantum computer 510. In various embodiments, quantum computer 510 comprises controller 30 and quantum processor 515. In various embodiments, the quantum processor 515 includes an atomic object confinement device 520 (including an RF bus) enclosed in a cryostat and / or vacuum chamber 40, one or more voltage sources 50, one or more manipulation sources 60, and / or the like.

[0075] In one exemplary embodiment, the one or more manipulation sources 60 comprise one or more lasers (e.g., optical lasers, microwave sources, and / or the like). In various embodiments, the one or more manipulation sources 60 are configured to manipulate and / or cause the controlled evolution of quantum states of one or more atomic objects within atomic object confinement device 520. For example, in one exemplary embodiment, when the one or more manipulation sources 60 comprise one or more lasers, the lasers may irradiate the confinement device within cryostat and / or vacuum chamber 40 with one or more laser beams (e.g., along respective optical paths 66A, 66B, 66C). The laser beams may be used to perform various operations (e.g., parallel operations), such as applying one or more quantum gates to one or more qubits, performing resonant cooling of one or more atomic objects, reading out qubits and / or determining the quantum state of atomic objects, initializing atomic objects into qubit space, etc., and / or the like. In various embodiments, manipulation sources 60 are controlled by respective driver controller elements 615 of controller 30 (see FIG. 6).

[0076] In various embodiments, the quantum computer 510 comprises one or more voltage sources 50. For example, the voltage source 50 may comprise a plurality of TT voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. The voltage source 50 may be electrically coupled to corresponding potential generating elements (e.g., TT electrodes 156, RF rail electrodes, RF bus electrodes) of the atomic object confinement device 520 in an exemplary embodiment. For example, the voltage source 50 is configured to supply an (RF) oscillating voltage signal to the RF rail electrodes and RF bus electrodes of the atomic object confinement device 520. For example, the voltage source 50 is configured to supply a control voltage signal to the TT electrode 156. In various embodiments, the voltage source 50 is controlled by respective driver controller elements 615 of the controller 30.

[0077] In various embodiments, the computing entity 10 is configured to enable a user to provide an input to the quantum computer 510 (e.g., via a user interface of the computing entity 10), receive, monitor, and / or perform similar operations on an output from the quantum computer 510. The computing entity 10 may communicate with the controller 30 of the quantum computer 510 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In an exemplary embodiment, the computing entity 10 may translate, configure, format, and / or perform similar operations on information / data, quantum circuits, quantum computing algorithms, and / or the like into a computing language, executable instructions, command set, and / or the like that can be understood and / or implemented by the controller 30.

[0078] In various embodiments, controller 30 is configured to control voltage source 50, a cryogenic system and / or vacuum system that controls the temperature and pressure within cryostat and / or vacuum chamber 40, manipulation source 60, and / or other systems configured to control various environmental conditions (e.g., temperature, pressure, magnetic field, and / or the like) within cryostat and / or vacuum chamber 40, and / or manipulate one or more atomic objects within atomic object confinement device 520, and / or cause controlled evolution of quantum states of the atomic objects. For example, controller 30 may cause controlled evolution of quantum states of one or more atomic objects within atomic object confinement device 520 to execute quantum circuits and / or algorithms. In various embodiments, atomic objects confined within atomic object confinement device 520 are used as qubits in quantum computer 510 and / or quantum processor 515. For example, quantum processor 515 may include multiple multi-atomic object crystals, each including a first atomic object used as a qubit atomic object of the quantum processor and a second atomic object used as a resonantly cooled atomic object for use in cooling qubit atomic objects of the same multi-atomic object crystal.

[0079] Exemplary Controller In various embodiments, the atomic object confinement device is incorporated into a quantum computer 510. In various embodiments, the quantum computer 510 further comprises a controller 30 configured to control various elements of the quantum computer 510. For example, the controller 30 may control a voltage source 50, a cryogenic system and / or a vacuum system that controls the temperature and pressure within a cryostat and / or a vacuum chamber 40, a manipulation source 60, and / or other systems configured to control environmental conditions (e.g., temperature, humidity, pressure, magnetic field, and / or the like) within the cryostat and / or the vacuum chamber 40, and / or to manipulate one or more atomic objects within the atomic object confinement device 520, and / or to cause a controlled evolution of the quantum state of the atomic object.

[0080] 6 , in various embodiments, the controller 30 may include various controller elements, including processing elements and / or devices 605, memory 610, driver controller elements 615, communication interfaces 620, analog-to-digital converter elements 625, and / or similar elements. For example, the processing elements and / or devices 605 may include programmable logic devices (CPLDs), microprocessors, coprocessing entities, application-specific instruction set processors (ASIPs), integrated circuits, application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), programmable logic arrays (PLAs), hardware accelerators, other processing devices and / or circuits, and / or the like, and / or controllers. The term circuitry may refer to an entirely hardware embodiment or a combination of hardware and a computer program product. In one exemplary embodiment, the processing elements and / or devices 605 of the controller 30 include and / or communicate with a clock. For example, the processing elements and / or devices 605 are configured to determine how to cause the quantum processors 515 to execute the quantum circuit using parallel (e.g., simultaneous) operations, and then control various aspects of the quantum computer (e.g., by sending instructions to the respective driver controller elements 615) to cause the quantum processors 515 to execute the quantum circuit using parallel operations.

[0081] For example, memory 610 may include non-transitory memory such as volatile and / or non-volatile memory storage, such as one or more of a hard disk, ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and / or the like. In various embodiments, memory 610 may store qubit records (e.g., in a qubit record data store, qubit record database, qubit record table, and / or the like) corresponding to qubits of a quantum computer, calibration tables, executable queues, computer program code (e.g., one or more computer languages, dedicated controller languages, and / or the like), one or more libraries, one or more waveform sequences for forming control voltage signals for controlling the transport of atomic objects along a one-dimensional trap region and through junctions connecting the one-dimensional trap regions, and associated metadata, and / or the like. In an exemplary embodiment, execution of at least a portion of the computer program code stored in memory 610 (e.g., by processing element and / or device 605) causes controller 30 to perform one or more of the steps, operations, processes, procedures, and / or the like described herein to track the phase, placement, and / or the like of atomic objects and / or multi-atomic object crystals within the atomic system, thereby causing adjustment of the phase of one or more manipulation sources and / or signals generated thereby.

[0082] In various embodiments, the driver controller element 615 may include one or more driver and / or controller elements, each configured to control one or more drivers. In various embodiments, the driver controller element 615 may comprise a driver and / or a driver controller. For example, a driver controller may be configured to cause one or more corresponding drivers to be operated according to executable instructions, commands, and / or the like scheduled and executed by the controller 30 (e.g., by the processing element and / or device 605). In various embodiments, the driver controller element 615 may enable the controller 30 to operate the manipulation source 60, the voltage source 50, and / or the like. In various embodiments, the driver may be a laser driver, a vacuum component driver, a driver for controlling the flow of current and / or voltage applied to a TT electrode, an RF rail electrode, an RF bus electrode, and / or other electrodes used to maintain and / or control the trapping potential of an atomic object confinement device and / or cause transport of one or more atomic objects, a cryogenic and / or vacuum system component driver, and / or the like. For example, the driver may control and / or comprise TT and / or RF voltage drivers and / or voltage sources 50 that provide voltages and / or electrical signals (e.g., oscillating voltage signals and / or control voltage signals) to the TT electrodes, RF rail electrodes, and / or RF bus electrodes.

[0083] In various embodiments, the controller 30 is configured to communicate and / or receive signals from one or more light-receiving components such as a photodetector, a camera, a MEM camera, a CCD camera, a photodiode, a photomultiplier tube, and / or the like of an optical system condenser system configured to capture, detect, measure, and / or perform similar operations on an optical signal generated by an atomic object trapped and / or confined by the atomic object confinement device 520. For example, the controller 30 may include one or more analog-to-digital converter elements 625 configured to receive signals from one or more light-receiving components, calibration sensors, and / or the like.

[0084] In various embodiments, the controller 30 may include a communication interface 620 for interfacing and / or communicating with the computing entity 10. For example, the controller 30 may include a communication interface 620 for receiving executable instructions, a command set, and / or the like from the computing entity 10 and providing to the computing entity 10 an output received from the quantum computer 510 (e.g., from the optical condenser system) and / or a result of processing the output. In various embodiments, the computing entity 10 and the controller 30 may communicate directly via a wired and / or wireless connection and / or via one or more wired and / or wireless networks 20.

[0085] Exemplary Computing Entity FIG. 7 is an exemplary schematic diagram of an exemplary computing entity 10 that can be used in combination with embodiments of the present invention. In various embodiments, the computing entity 10 is configured to allow a user to provide input to the quantum computer 510 (e.g., via a user interface of the computing entity 10), receive, display, analyze, and / or otherwise operate on output from the quantum computer 510.

[0086] As shown in FIG. 7, computing entity 10 can include an antenna 712, a transmitter 704 (e.g., wireless), a receiver 706 (e.g., wireless), and a processing element 708 that provides signals to, and receives signals from, transmitter 704 and receiver 706, respectively. The signals provided to and received from transmitter 704 and receiver 706, respectively, may include signaling information / data according to the air interface standard of an applicable wireless system for communicating with various entities such as controller 30, other computing entities 10, and / or the like. In this regard, computing entity 10 may be operable with one or more air interface standards, communication protocols, modulation types, and access types. For example, computing entity 10 may be configured to communicate and / or provide communication using a wired data transmission protocol such as Fiber Distributed Data Interface (FDDI), Digital Subscriber Line (DSL), Ethernet, Asynchronous Transfer Mode (ATM), Frame Relay, Data Over Cable Service Interface Specification (DOCSIS), or any other wired transmission protocol.Similarly, computing entity 10 can be configured to communicate via a wireless external communication network that uses any of various protocols such as General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA (registered trademark)), Global System for Mobile Communications (GSM), Enhanced Data rates for GSM Evolution (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution-Data Optimized (EVDO), High Speed Packet Access (HSPA), High-Speed Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), Ultra Wide Band (UWB), Infrared (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth (registered trademark) protocol, Wireless Universal Serial Bus (USB) protocol, and / or any other arbitrary wireless protocol.Computing entity 10 may communicate using such protocols and standards, using Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), Hypertext Markup Language (HTML), and / or the like.

[0087] Via these communication standards and protocols, computing entity 10 can communicate with various other entities using concepts such as Unstructured Supplementary Service Information / Data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual-Tone Multi-Frequency signal (DTMF), and / or Subscriber Identity Module dialer (SIM dialer). Computing entity 10 can also download changes, add-ons, and updates to its firmware, software (e.g., including executable instructions, applications, program modules), and operating system. In various embodiments, computing entity 10 comprises one or more network interfaces 720 configured to communicate via one or more wired and / or wireless networks 20.

[0088] Computing entity 10 may also include a user interface device that includes one or more user input / output interfaces (e.g., a display 716 and / or a speaker / speaker driver coupled to processing element 708, and a touch screen, keyboard, mouse, and / or microphone coupled to processing element 708). For example, the user output interface may be configured to cause the display or audible presentation of information / data and for interactive operations via one or more user input interfaces, and may be executed on computing entity 10 and / or accessible via computing entity 10, applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, pages, and / or similar terms used interchangeably herein. The user input interface may comprise any of a number of devices that enable computing entity 10 to receive data, such as a keypad 718 (hard or soft), a touch display, a voice / utterance or motion interface, a scanner, a reader, or other input device. In embodiments including keypad 718, keypad 718 may include (or cause the display of) conventional numbers (0-9) and associated keys (#, *), and other keys used to operate computing entity 10, and may include a set of keys that can be activated to provide a full set of alphabetic keys or a full set of alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate some functions, such as a screen saver and / or sleep mode. Through such input, computing entity 10 can collect information / data, user interaction / input, and / or the like.

[0089] Computing entity 10 can also include volatile storage or memory 722 and / or non-volatile storage or memory 724, which can be embedded and / or can be removable. For example, non-volatile memory can be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, and / or the like. Volatile memory can be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and / or the like. Volatile and non-volatile storage or memory can store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, bytecode, compiled code, interpreter code, machine code, executable instructions, and / or the like to implement the functions of computing entity 10.

[0090] Conclusion Many modifications and other embodiments of the invention described herein will come to mind to those skilled in the art having the benefit of the teachings presented in the foregoing description and the related drawings. Therefore, it is to be understood that the invention is not to be limited to the specific embodiments disclosed and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.

Description of Reference Numerals

[0091] 10 Computing entity 20 Wireless network 30 Controller 40 Vacuum chamber 50 Voltage source 60 Manipulation source 66A, 66B, 66C Optical paths 100 Atomic object confinement device 110 RF bus 112 RF bus electrode 114 (Partial) surrounding cell 116 Surrounding zone 120 Central zone 122 RF rail electrode 122A, 122B RF rail electrodes 124 Longitudinal axis 124A, 124B Longitudinal axes 130 1D trap region 132 Confinement segment 135 Tiling cell 140 Horizontal leg (and / or linear / 1D trap segment) 142 Central point 154 Sequence and / or series 154A, 154B, 154C Sequences and / or series 156A, 156B, 156C, 156D TT electrodes 160 Zone and / or region 160A, 160B, 160C Zones and / or regions 170 Beam path 172A, 172B Positions 190 Plot 192 Plot 196 Plot 198 Plot 200 Atomic object confinement device 210 RF bus 212 Individual or discrete RF bus electrodes 214 (Partial) surrounding cell 216 Surrounding zone 220 Central zone 222 RF rail electrode 230 1D trap region 232 1D confinement segment 300 Atomic object confinement device 302 Inner edge 304 Outer edge 306, 308 Axis of reflection symmetry 310 RF bus 312 Continuous sloped edge RF bus electrode 314 (Partial) peripheral cell 316 Peripheral zone 320 Central zone 322 RF rail electrode 330 1D trap region 332 1D confinement segment 400 Atomic object confinement device 402A Inner edge 402B Inner edge 404A Outer edge 404B Outer edge 406A (Virtual) line 406B (Virtual) line 408A (Virtual) line 408B (Virtual) line 409A (Virtual) line 409B (Virtual) line 410 RF bus 412 RF bus electrode 412A First RF bus electrode 412B Second RF bus electrode 414 (Partial) peripheral cell 415A First edge 415B Second edge 415C Third edge 415D Fourth edge 416 Peripheral zone 417 Corner 418 Corner feature 418A First corner feature 420 Central zone 422 RF rail electrode 430 1D trap region 432 One-dimensional confinement segment 500 Quantum computer system 510 Quantum computer 515 Quantum processor 520 Atomic object confinement device 605 Processing element and / or device 610 Memory 615 Driver controller element 620 Communication interface 625 Analog-digital converter element 704 Transmitter 706 Receiver 708 Processing element 712 Antenna 718 Keypad 716 Display 720 Network interface 722 Volatile storage or memory 724 Non-volatile storage or memory

Claims

**Claim 1** An atomic object confinement device comprising one or more radio frequency (RF) rail electrodes and one or more radio frequency (RF) bus electrodes, wherein at least a subset of the one or more radio frequency (RF) rail electrodes is disposed within a central zone of the atomic object confinement device, the radio frequency (RF) bus electrodes are disposed in a peripheral zone of the atomic object confinement device disposed around the central zone, the one or more radio frequency (RF) rail electrodes and the one or more radio frequency (RF) bus electrodes at least partially define a periodic array of trap regions within at least a portion of the central zone of the atomic object confinement device, and the one or more radio frequency (RF) bus electrodes are configured to mitigate a periodic perturbation of a trap pseudopotential present in the central zone. An atomic object confinement device. **Claim 2** The atomic object confinement device according to claim 1, wherein the one or more radio frequency (RF) rail electrodes are disposed in a periodic arrangement at least partially defined by a tiling cell, and the atomic object confinement device further includes one or more peripheral cells that are at least partial copies of the tiling cell. **Claim 3** wherein the one or more radio frequency (RF) bus electrodes extend substantially along at least one edge of the peripheral zone, the one or more radio frequency (RF) bus electrodes have a substantially rectangular shape, the one or more radio frequency (RF) bus electrodes have angled edges, and the one or more radio frequency (RF) bus electrodes include one or more corner features, each corner feature being disposed at each corner of the peripheral zone, the corner feature being a portion of the radio frequency (RF) bus electrode having a different topology and / or geometry compared to a portion of the radio frequency (RF) bus electrode that is not part of the corner feature The atomic object confinement device according to claim 1, characterized by at least one of the above.

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