Bonding device and bonding method

Abstract

To improve a yield of a semiconductor device.SOLUTION: A bonding device includes first and second chucks LC and UC and a pressing pin 30. The second chuck UC is arranged above the first chuck LC. The pressing pin 30 is provided at the center part of the second chuck UC so as to have a tip part extending in a first direction and to be liftable in the first direction. The first chuck LC has a first rib 42 that separates a first region NSA from a second region SA, the first region NSA including a region overlapped with the tip part of the pressing pin 30 in a plan view, the second region SA surrounding an outer periphery of the first region NSA. The first chuck LC has a plurality of pins 43 each provided at an interval in the second region SA, on a surface of the first chuck LC opposed to the second chuck UC. No pin 43 is provided in a region overlapped with the tip part in a plan view of the first region NSA.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] Embodiments relate to a bonding apparatus and a bonding method.

Background Art

[0002] 3D stacking technology for stacking semiconductor circuit boards three-dimensionally is known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] Improve the yield of semiconductor devices.

Means for Solving the Problems

[0005] The bonding device according to the embodiment performs a bonding process of bonding the first surface of the first substrate and the second surface of the second substrate. The bonding device includes a first chuck, a second chuck, and a pressing pin. The first chuck can hold the third surface facing the first surface of the first substrate. The second chuck can hold the fourth surface facing the second surface of the second substrate and is disposed above the first chuck. The pressing pin is provided at the center of the second chuck, has a tip portion extending in the first direction, and is provided so as to be movable up and down in the first direction. The first chuck has a first rib that separates a first region including a region overlapping the tip portion of the pressing pin in plan view and a second region surrounding the outer periphery of the first region. The first chuck has a plurality of pins provided at intervals in the second region on the fifth surface of the first chuck facing the second chuck, and has no pins in the region overlapping the tip portion in plan view of the first region.

Brief Description of Drawings

[0006]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

MODE FOR CARRYING OUT THE INVENTION

[0007] Hereinafter, embodiments will be described with reference to the drawings. Each embodiment illustrates an apparatus and a method for embodying the technical idea of the invention. The drawings are schematic or conceptual. Dimensions, ratios, etc. of each drawing are not necessarily the same as those in reality. Illustrations of configurations are appropriately omitted for easy viewing of the drawings. Hatching added to the drawings is not necessarily related to the material or characteristics of the components. In this specification, the X direction, the Y direction, and the Z direction indicate directions intersecting each other. Also, components having substantially the same function and configuration are denoted by the same reference numerals. Letters or the like added to the reference numerals are referred to by the same reference numerals and are used to distinguish between similar elements.

[0008] [1] First Embodiment Hereinafter, the bonding apparatus 1 according to the first embodiment will be described. The bonding apparatus 1 according to the first embodiment is an apparatus used for bonding two semiconductor circuit boards, and has a configuration capable of improving the superposition of the two semiconductor circuit boards to be bonded. In this specification, a semiconductor circuit board is referred to as a "wafer". Also, of the two wafers bonded by the bonding apparatus 1, the wafer disposed on the lower side is referred to as the "lower wafer LW", and the wafer disposed on the upper side is referred to as the "upper wafer UW". "Upper and lower" is defined based on the direction along the Z direction.

[0009] [1-1] Outline of the Bonding Apparatus 1 FIG. 1 is a side view showing an example of the states of two wafers before and after bonding by the bonding apparatus 1. (A) and (B) in FIG. 1 correspond to the states before and after bonding, respectively. As shown in (A) of FIG. 1, the bonding apparatus 1 arranges the upper wafer UW and the lower wafer LW to face each other. The upper surface of the upper wafer UW is the back surface of the upper wafer UW and is held by the bonding apparatus 1. The lower surface of the upper wafer UW is the front surface of the upper wafer UW and corresponds to the bonding surface. The front and back surfaces of the upper wafer UW face each other. The upper surface of the lower wafer LW is the front surface of the lower wafer LW and corresponds to the bonding surface. The lower surface of the lower wafer LW is the back surface of the lower wafer LW and is held by the bonding apparatus 1. The front and back surfaces of the lower wafer LW face each other. Then, the bonding apparatus 1 adjusts the overlapping position of the upper wafer UW and the lower wafer LW. Then, as shown in (B) of FIG. 1, the bonding apparatus 1 bonds the lower surface (bonding surface) of the upper wafer UW and the upper surface (bonding surface) of the lower wafer LW.

[0010] In this specification, the two bonded wafers are referred to as "bonded wafer BW". The bonded wafer BW includes semiconductor devices such as NAND type flash memories. When the semiconductor device is a NAND type flash memory, for example, a control circuit or the like is arranged on the lower wafer LW, and a memory cell or the like is arranged on the upper wafer UW. Details of the bonding process will be described later.

[0011] [1-2] Configuration of Bonding Apparatus 1 FIG. 2 is a block diagram showing an example of the configuration of the bonding apparatus 1 according to the first embodiment. As shown in FIG. 2, the bonding apparatus 1 includes, for example, a control device 10, an upper stage 11, a lower stage 12, a vacuum pump 13, and a transfer device 14.

[0012] The control device 10 is a computer or the like that controls the overall operation of the bonding device 1. The control device 10 controls each of the upper stage 11, the lower stage 12, the vacuum pump 13, and the transfer device 14. Although not shown in the figure, the control device 10 includes, for example, a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and the like. The CPU is a processor that executes various programs related to the control of the bonding device 1. The ROM is a non-volatile storage device that stores the control program of the bonding device 1. The RAM is a volatile storage device used as the working area of the CPU. The control device 10 may execute a program installed from an externally connected storage medium.

[0013] The upper stage 11 is a wafer stage having a function of adsorbing the upper wafer UW and a function of adjusting the position of the upper stage 11. The upper stage 11 includes an upper chuck UC and a striker unit SU. The upper chuck UC is a wafer chuck having a function of fixing the wafer by vacuum adsorption, and is, for example, a pin chuck. The upper chuck UC holds the upper wafer UW by adsorbing it below the upper chuck UC. The striker unit SU is a device having a function of pushing the upper surface of the center portion of the upper wafer UW held by the upper chuck UC.

[0014] The lower stage 12 is a wafer stage having a function of adsorbing the lower wafer LW and a function of adjusting the position of the lower stage 12. The lower stage 12 includes a lower chuck LC. The lower chuck LC is a wafer chuck having a function of fixing the wafer by vacuum adsorption, and is, for example, a pin chuck. The lower chuck LC holds the lower wafer LW by adsorbing it above the upper chuck UC. The upper stage 11 and the lower stage 12 are configured such that the upper wafer UW held by the upper chuck UC and the lower wafer LW held by the lower chuck LC can be arranged to face each other. That is, the upper chuck UC can be arranged above the lower chuck LC.

[0015] The vacuum pump 13 is a pump having a function of discharging gas. The vacuum pump 13 is connected to at least one suction port provided in each of the upper chuck UC and the lower chuck LC. The vacuum pump 13 can perform evacuation independently through each of the plurality of suction ports based on the control of the control device 10.

[0016] The transfer device 14 is a device including a transfer arm capable of transferring wafers, a transition for temporarily placing a plurality of wafers, and the like. The transfer device 14 handles the upper wafer UW, the lower wafer LW, and the bonded wafer BW. For example, the transfer device 14 transfers the upper wafer UW and the lower wafer LW received from an external pretreatment device to the upper chuck UC and the lower chuck LC, respectively. Further, after the bonding process, the transfer device 14 transfers the bonded wafer BW held by the lower chuck LC to the outside of the bonding device 1. The transfer device 14 may include a mechanism for inverting the upper and lower sides of the wafer.

[0017] Note that the above-mentioned "pretreatment device" is a device having a function of reforming and hydrophilizing the bonding surfaces of the upper wafer UW and the lower wafer LW so that they can be bonded before the bonding process of the bonding device 1. Briefly stated, the pretreatment device first performs plasma treatment on the surfaces of the upper wafer UW and the lower wafer LW, respectively, to reform the surfaces of the upper wafer UW and the lower wafer LW. In the plasma treatment, oxygen ions or nitrogen ions are generated based on oxygen gas or nitrogen gas as a treatment gas in a predetermined reduced-pressure atmosphere, and the generated oxygen ions or nitrogen ions are irradiated onto the bonding surfaces of the respective wafers. Thereafter, the pretreatment device supplies pure water to the surfaces of the upper wafer UW and the lower wafer LW, respectively. Then, hydroxyl groups adhere to the surfaces of the upper wafer UW and the lower wafer LW, respectively, and the surfaces are hydrophilized. In the bonding process of the bonding device 1, the upper wafer UW and the lower wafer LW whose bonding surfaces are reformed and hydrophilized in this way are used. The bonding device 1 may be combined with a pretreatment device or the like to form a bonding system.

[0018] (Configuration of the upper chuck UC) FIG. 3 is a schematic diagram showing an example of the configuration of the upper chuck UC and the striker unit SU included in the bonding apparatus 1 according to the first embodiment. (A) of FIG. 3 shows the planar layout of the upper chuck UC and the striker unit SU. (B) of FIG. 3 shows the cross-sectional structure of the upper chuck UC and the striker unit SU. As shown in FIG. 3, the upper chuck UC has a main body portion 20. The diameter of the main body portion 20 is at least larger than that of the upper wafer UW in a plan view. The main body portion 20 is provided with ribs 21, 22, 23, and 24, a plurality of pins 25, a plurality of suction ports 26, 27, and 28, and a through hole 29. The striker unit SU has a pressing pin 30, an actuator portion 31, and a drive portion 32.

[0019] Each of the ribs 21, 22, 23, and 24 and the plurality of pins 25 is provided on the lower surface of the main body portion 20. The lower surface of the main body portion 20 corresponds to the adsorption surface of the upper chuck UC. The height of each of the ribs 21, 22, 23, and 24 and the plurality of pins 25 is substantially uniform. The ribs 21, 22, 23, and 24 are arranged, for example, concentrically. Specifically, each of the ribs 21, 22, 23, and 24 is provided in an annular shape. The rib 21 is disposed on the outer peripheral portion of the main body portion 20. The diameter of the rib 22 is smaller than that of the rib 21. The diameter of the rib 23 is smaller than that of the rib 22. The diameter of the rib 24 is smaller than that of the rib 23.

[0020] Hereinafter, the region between the ribs 21 and 22 will be referred to as the "edge region EA". The region between the ribs 22 and 23 will be referred to as the "middle region MA". The region between the ribs 23 and 24 will be referred to as the "center region CA". Note that each of the edge region EA, the middle region MA, and the center region CA may be referred to as a "suction region". As shown in (A) of FIG. 3, it is preferable that the upper chuck UC has a plurality of suction regions from the inner periphery toward the outer periphery. Each suction region may be further divided or may have other shapes.

[0021] The plurality of pins 25 are arranged apart from each other across the entire areas of the center region CA, the middle region MA, and the edge region EA, respectively. The arrangement of the plurality of pins 25 can be changed as appropriate. Each of the suction ports 26, 27, and 28 is independently connected to the vacuum pump 13. Each of the suction ports 26, 27, and 28 is connected to the lower surface of the upper chuck UC. The plurality of suction ports 26 are arranged in the edge region EA. The plurality of suction ports 27 are arranged in the middle region MA. The plurality of suction ports 28 are arranged in the center region CA. At least one suction port may be provided for each suction region.

[0022] As shown in Fig. 3(A), the through hole 29 is arranged in the central part of the main body 20, that is, the region surrounded by the center region CA. As shown in Fig. 3(B), the through hole 29 is provided so as to penetrate the main body 20 along the Z direction. The central part of the main body 20 is provided so as to face the central part of the upper wafer UW held by the upper chuck UC. Then, the through hole 29 is formed such that the tip portion of the pressing pin 30 can be inserted and moved up and down along the Z direction.

[0023] The pressing pin 30 is a pin having a portion extending in the Z direction. The actuator portion 31 supports the pressing pin 30. The actuator portion 31 can generate a constant pressure in the Z direction by air supplied from a pneumatic regulator (not shown). The drive portion 32 supports the actuator portion 31. The drive portion 32 incorporates, for example, a motor and can move the actuator portion 31 in the Z direction.

[0024] In the upper chuck UC described above, the vacuum pump 13 can decompress the edge region EA, the middle region MA, and the center region CA through the suction ports 26, 27, and 28, respectively. The upper wafer UW is adsorbed and held on the side of the main body 20 according to the fact that each suction region is decompressed and the external atmosphere is, for example, atmospheric pressure. The control device 10 can individually turn on / off the adsorption of the wafer in each of the center region CA, the middle region MA, and the edge region EA by controlling the vacuum pump 13.

[0025] When the upper chuck UC sucks the upper wafer UW, the rib 21 supports the outer peripheral portion of the upper surface of the upper wafer UW, and each of the ribs 22, 23, and 24 and the plurality of pins 25 supports a part of the upper surface of the upper wafer UW. By supporting the upper surface of the upper wafer UW by the plurality of pins 25, the upper wafer UW can be held in a flat shape, and the distortion (warpage) of the upper wafer UW in the Z direction can be suppressed. Further, the influence of the particles remaining on the upper surface of the upper wafer UW on the flatness of the adsorbed upper wafer UW can be suppressed. Furthermore, since the contact area between the upper chuck UC and the upper wafer UW becomes small, when the adsorption of the upper wafer UW by the upper chuck UC is released, the upper wafer UW is easily peeled off from the upper chuck UC.

[0026] In the striker unit SU described above, the control device 10 can move the pressing pin 30 up and down in the Z direction by controlling the actuator unit 31 and the drive unit 32, and bring the tip portion of the pressing pin 30 into contact with the central portion of the upper surface of the upper wafer UW adsorbed by the upper chuck UC. Then, the control device 10 can control the weight with which the pressing pin 30 presses the central portion of the upper wafer UW. The pressing pin 30 may be called a "striker". The outer diameter D1 of the tip portion of the pressing pin 30 (that is, the portion where the pressing pin 30 contacts the upper surface of the upper wafer UW) is designed, for example, within the range of 1.0 to 10.0 mm.

[0027] (Configuration of the lower chuck LC) FIG. 4 is a schematic diagram showing an example of the configuration of the lower chuck LC provided in the bonding apparatus 1 according to the first embodiment. (A) of FIG. 4 shows the planar layout of the lower chuck LC in the first embodiment, and also shows the portion where the pressing pin 30 is arranged in the bonding process. (B) of FIG. 4 shows the cross-sectional structure of the lower chuck LC in the first embodiment. As shown in FIG. 4, the lower chuck LC has a main body portion 40. The diameter of the main body portion 40 is at least larger than that of the lower wafer LW in plan view. The main body portion 40 is provided with ribs 41 and 42, a plurality of pins 43, and a plurality of suction ports 44.

[0028] Each of the ribs 41 and 42 and the plurality of pins 43 is provided on the upper surface of the main body 40. The upper surface of the main body 40 corresponds to the adsorption surface of the lower chuck LC. The heights of each of the ribs 41 and 42 and the plurality of pins 43 are substantially uniform. The ribs 41 and 42 are arranged concentrically. Specifically, each of the ribs 41 and 42 is provided in an annular shape. The rib 41 is arranged on the outer peripheral portion of the main body 40. The inner diameter D2 of the rib 42 is smaller than that of the rib 41 and larger than the outer diameter D1 of the tip portion of the pressing pin 30. The inner diameter D2 of the rib 42 is designed, for example, within the range of 1.0 to 15.0 mm.

[0029] Hereinafter, the region between the ribs 41 and 42 will be referred to as the "suction region SA". The suction region SA may be divided or may have other shapes. The portion surrounded by the rib 42 is referred to as the "non-suction region NSA". The rib 42 may be referred to as a "partition wall portion". Note that the shape of the rib 42 is not limited to an annular shape. The rib 42 may be provided so as to surround the portion where the pressing pin 30 overlaps in a plan view during the joining process.

[0030] The plurality of pins 43 are arranged apart from each other over the entire area of the suction region SA. The arrangement of the plurality of pins 43 can be changed as appropriate. Each of the plurality of suction ports 44 is connected to the upper surface of the lower chuck LC. The plurality of suction ports 44 are connected to the vacuum pump 13. When the suction region SA is divided into a plurality of regions by ribs, at least one suction port may be provided for each suction region. When the suction region SA is divided into a plurality of regions by ribs, the lower chuck LC and the vacuum pump 13 may be configured to be able to evacuate independently for each divided region.

[0031] In other words, regarding the configuration of the lower chuck LC, the lower chuck LC has a plurality of pins 25 provided at intervals in the suction region SA on the upper surface of the lower chuck LC facing the upper chuck UC. On the other hand, the lower chuck LC does not have the pin 25 in the region (non-suction region NSA) that overlaps the tip portion of the pressing pin 30 in the plan view of the non-suction region NSA.

[0032] In the lower chuck LC described above, the vacuum pump 13 can decompress the suction region SA through a plurality of suction ports 44. The lower wafer LW is adsorbed and held on the main body portion 40 side in response to the decompression of the suction region SA and the external atmosphere being, for example, atmospheric pressure. On the other hand, since the non-suction region NSA is, for example, open to the atmosphere, it maintains atmospheric pressure. For this reason, the portion of the lower wafer LW in contact with the non-suction region NSA is not adsorbed to the main body portion 40 side. In other words, the lower chuck LC has a structure that becomes hollow (for example, atmospheric pressure) without adsorbing the portion of the lower wafer LW located directly below the striker (pressing pin 30).

[0033] When the lower chuck LC adsorbs the lower wafer LW, the rib 41 supports the outer peripheral portion of the lower surface of the lower wafer LW, and each of the rib 42 and the plurality of pins 43 supports a part of the lower surface of the lower wafer LW. By supporting the lower surface of the lower wafer LW with the plurality of pins 43, the lower wafer LW can be held in a flat shape, and the distortion (warpage) of the lower wafer LW in the Z direction can be suppressed. In addition, the influence of the particles remaining on the lower surface of the lower wafer LW on the flatness of the adsorbed lower wafer LW can be suppressed. Furthermore, since the contact area between the lower chuck LC and the lower wafer LW becomes small, when the adsorption of the lower wafer LW by the lower chuck LC is released, the lower wafer LW is easily peeled off from the lower chuck LC.

[0034] [1-3] Bonding process FIG. 5 is a flowchart showing an example of the bonding process of the bonding apparatus 1 according to the first embodiment. Hereinafter, with reference to FIG. 5, an example of the bonding process as the bonding method of the bonding apparatus 1 according to the first embodiment will be described.

[0035] When the bonding apparatus 1 receives the upper wafer UW and the lower wafer LW whose bonding surfaces are hydrophilized, it starts the bonding process (start).

[0036] First, the control device 10 causes the upper wafer UW to be held by the upper chuck UC (S1). Specifically, for the upper wafer UW received by the transfer device 14, the bonding surface faces upward. Therefore, first, the transfer device 14 inverts the upper wafer UW so that the bonding surface of the upper wafer UW faces downward. Then, the transfer device 14 transfers the inverted upper wafer UW below the upper chuck UC. Thereafter, the control device 10 operates the vacuum pump 13 to depressurize each of the center region CA, the middle region MA, and the edge region EA of the upper chuck UC, and adsorbs and holds the upper surface of the upper wafer UW on the upper chuck UC (upper stage 11).

[0037] Next, the control device 10 causes the lower wafer LW to be held by the lower chuck LC (S2). Specifically, for the lower wafer LW received by the transfer device 14, the bonding surface faces upward. Therefore, the transfer device 14 transfers the lower wafer LW above the lower chuck LC without inverting the lower wafer LW. Thereafter, the control device 10 operates the vacuum pump 13 to depressurize the suction region SA of the lower chuck LC, and adsorbs and holds the lower surface of the lower wafer LW on the lower chuck LC (lower stage 12). Note that the order of the processes of S1 and S2 may be swapped, or the processes of S1 and S2 may be executed in parallel.

[0038] Next, the control device 10 arranges the upper wafer UW and the lower wafer LW to face each other (S3). Specifically, the control device 10 adjusts the positions of the upper stage 11 holding the upper wafer UW and the lower stage 12 holding the lower wafer LW so that the upper wafer UW and the lower wafer LW face each other. For example, the control device 10 can image at least one alignment mark from each of the bonding surface of the upper wafer UW and the bonding surface of the lower wafer LW, and adjust the overlapping position of the upper wafer UW and the lower wafer LW based on the imaging result. The configuration for imaging the alignment mark may be provided on each of the upper stage 11 and the lower stage 12, or may be provided on other parts of the bonding device 1. The distance between the opposed upper wafer UW and lower wafer LW is adjusted to a length at which the upper wafer UW and the lower wafer LW can come into contact and bond by the process of S5 described later.

[0039] Next, the control device 10 turns off the adsorption of the center area CA of the upper chuck UC (S4). Specifically, the control device 10 controls the vacuum pump 13 to stop the decompression in the center area CA of the upper chuck UC. At this time, since the decompression in each of the middle area MA and the edge area EA of the upper chuck UC is maintained, the adsorption of the upper wafer UW in each of the middle area MA and the edge area EA is maintained. That is, the upper wafer UW is held by the middle area MA and the edge area EA of the upper chuck UC.

[0040] Next, the control device 10 lowers the pressing pin 30 and presses the center portion of the upper wafer UW against the center portion of the lower wafer LW (S5). Specifically, the control device 10 controls the actuator unit 31 and the drive unit 32 to lower the pressing pin 30 and push down the center portion of the upper surface of the upper wafer UW to the tip portion of the pressing pin 30. At this time, the actuator unit 31 applies a predetermined pressing load to the upper wafer UW through the pressing pin 30 by the air supplied from the pneumatic regulator. As a result, the center portion of the upper wafer UW is deformed, and the center portion of the upper wafer UW and the center portion of the lower wafer LW come into contact with each other and are pressed. Then, bonding starts between the pressed center portion of the upper wafer UW and the center portion of the lower wafer LW. Briefly stated, a van der Waals force (intermolecular force) is generated between the bonding surface of the modified upper wafer UW and the bonding surface of the modified lower wafer LW, and the contact portions of the upper wafer UW and the lower wafer LW are bonded. Further, since the bonding surfaces of the upper wafer UW and the lower wafer LW are hydrophilic, the hydrophilic groups at the contact portions of the upper wafer UW and the lower wafer LW form hydrogen bonds (intermolecular forces), and the contact portions of the upper wafer UW and the lower wafer LW are bonded more firmly.

[0041] Next, the control device 10 turns off the suction of the middle area MA of the upper chuck UC (S6). Specifically, the control device 10 controls the vacuum pump 13 to stop the pressure reduction in the middle area MA of the upper chuck UC. At this time, since the pressure reduction in the edge area EA of the upper chuck UC is maintained, the suction of the upper wafer UW in the edge area EA is maintained. That is, the upper wafer UW is held by the edge area EA of the upper chuck UC. Then, the portion of the upper wafer UW held in the middle area MA of the upper chuck UC is gradually peeled off from the center area CA side and falls, coming into contact with the upper surface of the lower wafer LW. As a result, the portions of the upper wafer UW and the lower wafer LW that face the middle area MA are bonded by intermolecular forces in the same manner as in the process of S5.

[0042] Next, the control device 10 turns off the suction of the edge area EA of the upper chuck UC (S7). Specifically, the control device 10 controls the vacuum pump 13 to stop the pressure reduction in the edge area EA of the upper chuck UC. Then, the portion of the upper wafer UW held in the edge area EA of the upper chuck UC is gradually peeled off from the center area CA side and falls, coming into contact with the upper surface of the lower wafer LW. As a result, the portions of the upper wafer UW and the lower wafer LW that face the edge area EA are bonded by intermolecular forces in the same manner as in the process of S5. When the process of S7 is completed, the bonding surfaces of the upper wafer UW and the lower wafer LW are bonded over the entire surface, and the bonded wafer BW is formed.

[0043] Next, the control device 10 raises the pressing pin 30 and turns off the suction of the lower chuck LC (S8). Specifically, the control device 10 controls the actuator unit 31 and the drive unit 32 to raise the pressing pin 30, separating the tip portion of the pressing pin 30 from the upper surface of the upper wafer UW. Also, the control device 10 controls the vacuum pump 13 to stop the pressure reduction in the suction area SA of the lower chuck LC. Then, the lower surface of the lower wafer LW, that is, the lower surface of the bonded wafer BW, becomes easier to peel off from the lower chuck LC.

[0044] When the process of S8 is completed, the control device 10 causes the transfer device 14 to transfer the bonding wafer BW on the lower chuck LC to the outside, and ends the series of processes in FIG. 5 (end).

[0045] (Bonding process in the comparative example) FIG. 6 is a schematic diagram showing a specific example of the bonding process in the bonding device according to the comparative example. Each of (A), (B), (C), and (D) in FIG. 6 shows the states of the opposing upper stage 11 and lower stage 12, and the states of the upper wafer UW and the lower wafer LW, after a certain process step of the bonding process in the comparative example. Note that the bonding device according to the comparative example differs from the first embodiment only in the configuration of the lower chuck LC. Specifically, the lower chuck LC of the comparative example has a configuration in which the structure of the partition wall portion provided in the lower chuck LC of the first embodiment is omitted, and a plurality of pins 43 are arranged at the central portion. Hereinafter, with reference to FIG. 6, a specific example of the bonding process in the comparative example will be described.

[0046] When the processes of S1 to S3 in FIG. 5 are executed by the bonding device according to the comparative example, as shown in FIG. 6(A), the upper wafer UW is adsorbed and held by the upper chuck UC, the lower wafer LW is adsorbed and held by the lower chuck LC, and the upper wafer UW and the lower wafer LW are arranged to face each other. In the comparative example, the entire lower surface of the lower wafer LW is adsorbed and supported by the plurality of pins 43.

[0047] When the processes of S4 and S5 in FIG. 5 are executed by the bonding device according to the comparative example, the adsorption of the center region CA is turned off and the pressing pin 30 descends. As a result, as shown in FIG. 6(B), the central portion of the upper wafer UW is deformed into a concave shape by the pressure applied by the tip portion of the pressing pin 30, and the deformed concave portion is pressed against the central portion of the lower wafer LW. At this time, the central portion of the upper wafer UW is deformed along the shape of the tip portion of the pressing pin 30, and strain occurs. On the other hand, the portion of the lower wafer LW to which pressure is applied via the upper wafer UW is in a state of being supported by the plurality of pins 43 along with the adsorption of the lower chuck LC. Therefore, in the process of S5 in the comparative example, the deformation of the central portion of the lower wafer LW is suppressed.

[0048] When the process of S6 in FIG. 5 is executed by the bonding apparatus according to the comparative example, the adsorption in the middle region MA is turned off, and the portion of the upper wafer UW adsorbed in the middle region MA is peeled off from the center region CA side. Then, as shown in FIG. 6(C), the formation (progress) of covalent bonds between the bonding surface of the upper wafer UW and the bonding surface of the lower wafer LW proceeds from the center region CA side.

[0049] When the process of S7 is executed by the bonding apparatus according to the comparative example, the adsorption in the edge region EA is turned off, and the portion of the upper wafer UW adsorbed in the edge region EA is peeled off from the middle region MA side. Then, the formation of covalent bonds between the bonding surface of the upper wafer UW and the bonding surface of the lower wafer LW proceeds from the center region CA side. As a result, as shown in FIG. 6(D), the entire surfaces of the bonding surface of the upper wafer UW and the bonding surface of the lower wafer LW are bonded to form a bonded wafer BW.

[0050] (Bonding process in the first embodiment) FIG. 7 is a schematic diagram showing a specific example of the bonding process in the bonding apparatus 1 according to the first embodiment. Each of (A), (B), (C), and (D) in FIG. 7 shows the state of the opposed upper stage 11 and lower stage 12 and the states of the upper wafer UW and the lower wafer LW after a certain step of the bonding process in the first embodiment. Hereinafter, with reference to FIG. 7, a specific example of the bonding process as a bonding method of the bonding apparatus 1 according to the first embodiment will be described.

[0051] When the processes of S1 to S3 in FIG. 5 are executed by the bonding apparatus 1 according to the first embodiment, as shown in FIG. 7(A), the upper wafer UW is adsorbed and held by the upper chuck UC, the lower wafer LW is adsorbed and held by the lower chuck LC, and the upper wafer UW and the lower wafer LW are arranged to face each other. In the first embodiment, the lower surface of the lower wafer LW is adsorbed in the suction region SA, and the non-suction region NSA surrounded by the ribs 42 (partition walls) is not adsorbed. Since the non-suction region is not evacuated, it is maintained at, for example, atmospheric pressure. As a result, in the first embodiment, on the lower surface of the lower wafer LW, the portion facing the suction region SA is supported by a plurality of pins 43 or the like, and the portion facing the non-suction region NSA is not supported by the pins 43 or the like.

[0052] When the processes of S4 and S5 in FIG. 5 are executed by the bonding apparatus 1 according to the comparative example of the first embodiment, the suction in the center region CA is turned off and the pressing pin 30 descends, so that as shown in FIG. 7(B), the central portion of the upper wafer UW is deformed into a concave shape by the pressure applied by the pressing pin 30, and the deformed concave portion is pressed against the central portion of the lower wafer LW. At this time, the central portion of the upper wafer UW is deformed along the shape of the tip portion of the pressing pin 30, and distortion occurs. Further, since the portion of the lower wafer LW where pressure is applied through the upper wafer UW is not supported by pins 43 or the like, it is deformed along the shape of the deformed portion of the upper wafer UW, and distortion occurs. In other words, in the process of S5 in the first embodiment, as the central portion of the upper wafer UW is deformed into a concave shape, the central portion of the lower wafer LW is also deformed into a concave shape in the same manner.

[0053] When the process of S6 in FIG. 5 is executed by the bonding apparatus 1 according to the first embodiment, the suction in the middle region MA is turned off, so that the portion of the upper wafer UW adsorbed in the middle region MA is peeled off from the center region CA side. Then, as shown in FIG. 7(C), the formation (progress) of covalent bonding between the bonding surface of the upper wafer UW and the bonding surface of the lower wafer LW proceeds from the center region CA side.

[0054] When the process of S7 in FIG. 5 is executed by the bonding apparatus 1 according to the first embodiment, the suction of the edge region EA is turned off, so that the portion of the upper wafer UW adsorbed in the edge region EA is peeled off from the middle region MA side. Then, from the center region CA side, the formation of covalent bonds between the bonding surface of the upper wafer UW and the bonding surface of the lower wafer LW proceeds. As a result, as shown in FIG. 7(D), the entire surfaces of the bonding surface of the upper wafer UW and the bonding surface of the lower wafer LW are bonded to form a bonded wafer BW.

[0055] [1-4] Effects of the First Embodiment As described above, the bonding apparatus starts the progress of bonding between the upper wafer UW and the lower wafer LW triggered by an impact by the striker (pressing pin 30) on the upper wafer UW. However, due to the influence of the impact by the striker, a state in which the central portion of the upper wafer UW is locally distorted can be formed. In a configuration in which the lower wafer LW is adsorbed and held on the entire surface of the lower chuck LC including the central portion, as in the bonding apparatus according to the comparative example, when pressed by the striker, the distortion of the central portion of the lower wafer LW facing the central portion of the upper wafer UW is suppressed. For this reason, in the comparative example, since the bonding is performed in a state where the misalignment of the overlapping position occurs between the central portion of the upper wafer UW and the central portion of the lower wafer LW, in the semiconductor device disposed at the central portion of the bonded wafer BW, there is a possibility that a defect caused by the misalignment of the overlapping position may occur.

[0056] On the other hand, the bonding apparatus 1 according to the first embodiment provides a non-suction region NSA in the lower chuck LC, thereby distorting the lower wafer LW in a concave shape in accordance with the concave distortion of the upper wafer UW by the striker. As a result, the bonding apparatus 1 according to the first embodiment can reduce the misalignment of the overlapping positions of the upper wafer UW and the lower wafer LW at the central portion of the bonded wafer BW. Therefore, the bonding apparatus 1 according to the first embodiment can suppress the occurrence of defects caused by the misalignment of the overlapping positions at the central portion of the bonded wafer BW, and can improve the yield of the semiconductor device.

[0057] [2] Second Embodiment The bonding apparatus 1 according to the second embodiment has the same configuration as that of the first embodiment, except that the lower chuck LC sucks and holds the central portion of the lower wafer LW in a concave shape. Further, the bonding apparatus 1 according to the second embodiment can execute the same bonding process as that of the first embodiment. Hereinafter, the points different from the first embodiment in the bonding apparatus 1 according to the second embodiment will be described.

[0058] [2-1] Configuration of the lower chuck LCa FIG. 8 is a schematic diagram showing an example of the configuration of the lower chuck LCa included in the bonding apparatus 1 according to the second embodiment. (A) of FIG. 8 shows the planar layout of the lower chuck LCa. (B) of FIG. 8 shows the cross-sectional structure of the lower chuck LCa. As shown in FIG. 8, the lower chuck LCa has a configuration in which the rib 42 is omitted and a plurality of pins 43a are added in the lower chuck LC of the first embodiment. Hereinafter, the central portion of the lower chuck LCa in a plan view will be referred to as "central portion CPa".

[0059] The suction region SA of the lower chuck LCa includes the central portion CPa and is provided in the entire region surrounded by the rib 41. The central portion CPa is provided in a region that is disposed to face the center region CA described in the first embodiment. When the region corresponding to the region surrounded by the central portion CPa in an annular shape, the diameter D3 of the central portion CPa is designed, for example, within a range of 1.0 to 15.0 mm.

[0060] In the central portion CPa, a plurality of pins 43a are arranged. The height of each of the plurality of pins 43a is designed to be lower than that of the pins 43 provided in the peripheral region of the central portion CPa (i.e., the region between the central portion CPa and the rib 41). Further, the height of each of the plurality of pins 43a is designed to increase from the portion overlapping the pressing pin 30 in a plan view toward the outer periphery of the lower chuck LCa. More specifically, the height of each of the plurality of pins 43a is such that the amount of distortion (i.e., the concave deformation amount at the center of the upper wafer UW) generated at the center of the upper wafer UW by the pressing pin 30 during the bonding process is substantially the same as the amount of distortion (i.e., the concave deformation amount at the center of the lower wafer LW adsorbed and held by the lower chuck LCa) generated at the center of the lower wafer LW adsorbed and held by the lower chuck LCa along the central portion CPa.

[0061] Other configurations of the bonding apparatus 1 according to the second embodiment are the same as those of the first embodiment.

[0062] [2-2] Bonding process in the second embodiment FIG. 9 is a schematic diagram showing a specific example of the bonding process in the bonding apparatus 1 according to the second embodiment. Each of (A), (B), and (C) in FIG. 9 shows the states of the opposing upper stage 11 and lower stage 12 and the states of the upper wafer UW and the lower wafer LW after a certain step of the bonding process in the second embodiment. Hereinafter, with reference to FIG. 9, a specific example of the bonding process as a bonding method of the bonding apparatus 1 according to the second embodiment will be described.

[0063] When the processes of S1 to S3 in FIG. 5 are executed by the bonding apparatus 1 according to the second embodiment, as shown in FIG. 9(A), the upper wafer UW is adsorbed and held by the upper chuck UC, the lower wafer LW is adsorbed and held by the lower chuck LC, and the upper wafer UW and the lower wafer LW are arranged to face each other. The lower chuck LC of the second embodiment adsorbs the entire surface of the lower wafer LW. Further, since the plurality of pins 43a arranged at the central portion CPa of the lower wafer LW are provided lower than the pins 43 arranged in other regions, the central portion of the lower wafer LW is deformed into a concave shape by vacuum adsorption and is supported by the plurality of pins 43a. That is, in the second embodiment, when the lower chuck LC adsorbs the lower wafer LW, a concave strain is generated in the central portion of the lower wafer LW.

[0064] When the processes of S4 and S5 in FIG. 5 are executed by the bonding apparatus 1 according to the second embodiment, when the adsorption of the center region CA is turned off and the pressing pin 30 descends, as shown in FIG. 9(B), the central portion of the upper wafer UW is deformed into a concave shape by the pressure applied by the tip portion of the pressing pin 30, and the deformed concave portion is pressed against the central portion (the deformed concave portion) of the lower wafer LW. At this time, the central portion of the upper wafer UW is deformed along the shape of the tip portion of the pressing pin 30, and strain occurs. On the other hand, the portion of the lower wafer LW where pressure is applied through the upper wafer UW is in a state of being supported by the plurality of pins 43a along with the adsorption of the lower chuck LC. Therefore, in the process of S5 in the second embodiment, the deformation of the central portion of the lower wafer LW is suppressed.

[0065] When the processes of S6 and S7 in FIG. 5 are executed by the bonding apparatus 1 according to the second embodiment, when the adsorption of the middle region MA and the edge region EA is turned off, the portions of the upper wafer UW adsorbed in the middle region MA and the edge region EA are peeled off from the center region CA side. Then, similar to the first embodiment, the formation (progress) of covalent bonds between the bonding surfaces of the upper wafer UW and the lower wafer LW proceeds from the center region CA side. As a result, as shown in FIG. 9(C), the entire surfaces of the bonding surfaces of the upper wafer UW and the lower wafer LW are bonded, and the bonded wafer BW is formed.

[0066] [2-3]Effect of the Second Embodiment As described above, when the lower chuck LC sucks the lower wafer LW, the bonding apparatus 1 according to the second embodiment generates a concave distortion in the central portion of the lower wafer LW. Then, the amount of the concave distortion generated in the lower wafer LW is adjusted to be substantially the same as the amount of the concave distortion in the central portion of the upper wafer UW caused by the impact of the striker.

[0067] Thereby, similar to the first embodiment, the bonding apparatus 1 according to the second embodiment can reduce the deviation of the overlapping position of the upper wafer UW and the lower wafer LW in the central portion of the bonding wafer BW. Therefore, similar to the first embodiment, the bonding apparatus 1 according to the second embodiment can suppress the occurrence of defects due to the deviation of the overlapping position in the central portion of the bonding wafer BW, and can improve the yield of the semiconductor device.

[0068] [3]Third Embodiment The bonding apparatus 1 according to the third embodiment has the same configuration as that of the first embodiment, except that the lower chuck LC sucks and holds the central portion of the lower wafer LW in a convex shape. In addition, the bonding apparatus 1 according to the third embodiment can perform the same bonding process as that of the first embodiment. Hereinafter, the differences between the bonding apparatus 1 according to the third embodiment and the first embodiment will be described.

[0069] [3-1]Configuration of the Lower Chuck LCb FIG. 10 is a schematic diagram showing an example of the configuration of the lower chuck LCb included in the bonding apparatus 1 according to the third embodiment. (A) of FIG. 10 shows the planar layout of the lower chuck LCb. (B) of FIG. 10 shows the cross-sectional structure of the lower chuck LCb. As shown in FIG. 10, the lower chuck LCb has a configuration in which the rib 42 is omitted and a plurality of pins 43b are added in the lower chuck LC of the first embodiment. Hereinafter, the central portion of the lower chuck LCb in a plan view will be referred to as "central portion CPb".

[0070] The suction area SA of the lower chuck LCB includes the central portion CPb and is provided over the entire area surrounded by the rib 41. The central portion CPb is provided in an area that faces the center area CA described in the first embodiment. When the area surrounded by the central portion CPb in a ring shape, the diameter D4 of the central portion CPb is designed, for example, within the range of 1.0 to 15.0 mm.

[0071] A plurality of pins 43b are arranged in the central portion CPb. The height of each of the plurality of pins 43b is designed to be higher than that of the pins 43 provided in the peripheral area of the central portion CPb (that is, the area between the central portion CPb and the rib 41). Also, the height of each of the plurality of pins 43b is designed to decrease from the portion overlapping with the pressing pin 30 in plan view toward the outer periphery of the lower chuck LCB. More specifically, the height of each of the plurality of pins 43b is designed such that the amount of distortion generated at the center of the upper wafer UW by the pressing pin 30 during the bonding process (that is, the amount of concave deformation at the center of the upper wafer UW) is substantially the same as the amount of distortion generated at the center of the lower wafer LW adsorbed and held by the lower chuck LCB (that is, the amount of convex deformation at the center of the lower wafer LW adsorbed along the central portion CPb).

[0072] Other configurations of the bonding apparatus 1 according to the third embodiment are the same as those of the first embodiment.

[0073] [3-2] Bonding process in the third embodiment FIG. 11 is a schematic diagram showing a specific example of the bonding process in the bonding apparatus 1 according to the third embodiment. Each of (A), (B), and (C) in FIG. 11 shows the states of the opposing upper stage 11 and lower stage 12 and the states of the upper wafer UW and lower wafer LW after a certain process of the bonding process in the third embodiment. Hereinafter, with reference to FIG. 11, a specific example of the bonding process as the bonding method of the bonding apparatus 1 according to the third embodiment will be described.

[0074] When the processes S1 to S3 in FIG. 5 are executed by the bonding apparatus 1 according to the third embodiment, as shown in FIG. 11(A), the upper wafer UW is adsorbed and held by the upper chuck UC, the lower wafer LW is adsorbed and held by the lower chuck LC, and the upper wafer UW and the lower wafer LW are arranged to face each other. The lower chuck LC of the third embodiment adsorbs the entire surface of the lower wafer LW. Further, since the plurality of pins 43b arranged at the center portion CPb of the lower wafer LW are provided higher than the pins 43 arranged in other regions, the center portion of the lower wafer LW is deformed convexly by vacuum adsorption and is supported by the plurality of pins 43b. That is, in the third embodiment, when the lower chuck LC adsorbs the lower wafer LW, distortion occurs in the center portion of the lower wafer LW.

[0075] When the processes S4 and S5 in FIG. 5 are executed by the bonding apparatus 1 according to the third embodiment, the adsorption of the center region CA is turned off and the pressing pin 30 descends, so that as shown in FIG. 11(B), the center portion of the upper wafer UW is deformed concave by the pressure applied by the tip portion of the pressing pin 30, and the deformed concave portion is pressed against the center portion (the deformed convex portion) of the lower wafer LW. At this time, the center portion of the upper wafer UW is deformed along the shape of the tip portion of the pressing pin 30 and distortion occurs. On the other hand, the portion of the lower wafer LW where pressure is applied through the upper wafer UW is in a state of being supported by the plurality of pins 43b with the adsorption of the lower chuck LC. Therefore, in the process S5 in the third embodiment, the deformation of the center portion of the lower wafer LW is suppressed.

[0076] When the processes S6 and S7 in FIG. 5 are executed by the bonding apparatus 1 according to the third embodiment, the adsorption of the middle region MA and the edge region EA is turned off, so that the portions of the upper wafer UW adsorbed in the middle region MA and the edge region EA are peeled off from the center region CA side. Then, similarly to the first embodiment, the formation (progress) of covalent bonds between the bonding surfaces of the upper wafer UW and the lower wafer LW proceeds from the center region CA side. As a result, as shown in FIG. 11(C), the entire surfaces of the bonding surfaces of the upper wafer UW and the lower wafer LW are bonded to form a bonded wafer BW.

[0077] [3-3] Effects of the Third Embodiment As described above, when the lower chuck LC sucks the lower wafer LW, the bonding apparatus 1 according to the third embodiment generates a convex distortion in the central portion of the lower wafer LW. Then, the amount of the convex distortion generated in the lower wafer LW is adjusted to be substantially the same as the amount of the concave distortion in the central portion of the upper wafer UW caused by the impact of the striker.

[0078] Thereby, similar to the first embodiment, the bonding apparatus 1 according to the third embodiment can reduce the deviation of the overlapping position of the upper wafer UW and the lower wafer LW at the central portion of the bonded wafer BW. Therefore, similar to the first embodiment, the bonding apparatus 1 according to the third embodiment can suppress the occurrence of defects caused by the deviation of the overlapping position at the central portion of the bonded wafer BW, and can improve the yield of the semiconductor device.

[0079] [4] Others The above embodiments can be variously modified.

[0080] FIG. 12 is a schematic diagram showing a specific example of a bonding process by the bonding apparatus 1 according to a modified example of the first embodiment, and shows an example of a cross-sectional structure of the lower chuck LC included in the bonding apparatus 1 according to the modified example of the first embodiment. As shown in FIG. 12, the lower chuck LC in the modified example of the first embodiment has a configuration in which at least one pin 42c is added to the lower chuck LC in the first embodiment. The height of the pin 42c is designed so as not to contact when the pressing pin 30 presses the central portion of the lower wafer LW through the upper wafer UW. Thus, the lower chuck LC may include the pin 42c that does not contribute to the support of the lower wafer LW.

[0081] In this specification, although the case where the bonding apparatus 1 bonds two wafers has been exemplified, it is not limited thereto. For example, each of the lower wafer LW and the upper wafer UW may be a stack of a plurality of wafers. That is, the bonded wafer formed by the bonding apparatus 1 may have a configuration in which three or more wafers are bonded.

[0082] In this specification, the case where each of the upper chuck UC and the lower chuck LC is a pinch chuck has been exemplified. However, each of the upper chuck UC and the lower chuck LC may be a chuck of other types. The upper chuck UC preferably has a function of being able to sequentially turn off suction from the inside to the outside of the upper wafer UW. The lower chuck LC may have a configuration similar to that of the partition portion SP or the central portion CP. For example, in the first embodiment, the lower chuck LC may have a configuration such that it does not adsorb and support the inner portion of the partition portion SP in a plan view and adsorbs and supports the outer portion. In the second embodiment, the lower chuck LC may be provided with a support member such that when the wafer is adsorbed, the portion of the lower wafer LW located at the central portion CP is deformed into a concave shape. In the third embodiment, the lower chuck LC may be provided with a support member such that when the lower wafer LW is adsorbed, the portion of the lower wafer LW located at the central portion CP is deformed into a convex shape.

[0083] In this specification, the "pins" and "ribs" provided in the upper chuck UC and the lower chuck LC are formed, for example, by processing the main body portion. The "region" may be regarded as a configuration included by the upper chuck UC or the lower chuck LC. For example, when the lower chuck LC is defined to include a suction region SA and a non-suction region NSA, the suction region SA and the non-suction region NSA are respectively associated with regions above the main body portion 40 and different from each other. The "height" is measured based on the main body portion 20 or 40. As a reference for the "height", a configuration other than the main body portion 20 or 40 may be used. The "plan view" corresponds to a state of viewing the XY plane (a plane parallel to the surface of the main body portion 20 or 40) formed by the X direction and the Y direction, for example, from the Z direction.

[0084] Although some embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the invention described in the claims and its equivalent scope.

Explanation of Reference Numerals

[0085] 1... Bonding device, 10... Control device, 11... Upper stage, 12... Lower stage, 13... Vacuum pump, 14... Transfer device, UW... Upper wafer, LW ... Lower wafer, BW... Bonding wafer, UC... Upper chuck, LC…Lower chuck, 20... Main body portion, 21 - 24... Ribs, 25... Pin, 26... Suction port, 27... Suction port, 28... Suction port, 29... Through hole, CA... Center region, MA... Middle region, EA... Edge region, SU... Striker unit, 30... Pressing pin, 31... Actuator portion, 32... Driving portion 、4 0... Main body portion, 41, 42... Ribs, 43... Pin, 44... Suction port, SA... Suction region, NSA... Non - suction region, CP... Central portion

Claims

1. A bonding device that performs a bonding process for bonding a first surface of a first substrate and a second surface of a second substrate, a first chuck capable of holding a third surface facing the first surface of the first substrate, a second chuck capable of holding a fourth surface facing the second surface of the second substrate and disposed above the first chuck, a pressing pin provided at a central portion of the second chuck, having a tip portion extending in a first direction, and provided so as to be movable up and down in the first direction, comprising: in a plan view, the first chuck has a first rib that separates a first region including a region overlapping the tip portion of the pressing pin and a second region surrounding the outer periphery of the first region, on a fifth surface of the first chuck facing the second chuck, the first chuck has a plurality of pins provided at intervals in the second region, and does not have the pins in a region overlapping the tip portion in a plan view of the first region, an outer diameter of the tip portion of the pressing pin is in a range of 1.0 to 10.0 mm, an inner diameter of the first rib is in a range of 1.0 to 15.0 mm, A bonding device.

2. the first chuck has a suction port connected to the fifth surface within the second region, when the first chuck holds the third surface of the first substrate, a portion corresponding to the first region is open to the atmosphere at the fifth surface of the first chuck, and a portion corresponding to the second region is evacuated through the suction port, The bonding device according to claim 1.

3. the fifth surface of the first chuck has a second rib provided so as to surround each of the first region and the second region, The bonding device according to claim 1.

4. in a plan view, an outer diameter of the tip portion of the pressing pin is smaller than an inner diameter of the first rib, The bonding device according to claim 1.

5. A bonding device that performs a bonding process for bonding a first surface of a first substrate and a second surface of a second substrate, a first chuck capable of holding a third surface facing the first surface of the first substrate, a second chuck capable of holding a fourth surface facing the second surface of the second substrate and disposed above the first chuck, a pressing pin provided at a central portion of the second chuck, having a tip portion extending in a first direction, and provided so as to be movable up and down in the first direction, comprising: The first chuck has a first region including a region overlapping with the tip portion of the pressing pin in a plan view and a second region surrounding the outer periphery of the first region. The first chuck has a plurality of pins provided at intervals on a fifth surface of the first chuck facing the second chuck, and the height of the pins located in the first region is lower than the height of the pins located in the second region. Bonding device.

6. The height of the pins located in the second region is substantially uniform. The bonding device according to claim 5.

7. There are a plurality of pins located in the first region, and each of the pins located in the first region is lower than the height of the pins located in the second region. The bonding device according to claim 5.

8. The plurality of pins located in the first region become higher as they go from the region overlapping with the tip portion of the pressing pin in a plan view toward the outer periphery. The bonding device according to claim 7.

9. The bonding device according to claim 1 or claim 5, holding the first substrate with the first chuck, holding the second substrate with the second chuck, and bonding the first substrate and the second substrate. Bonding method.

Images