Synthesis of blue-emitting ZnSe1-xTex alloy nanocrystals with narrow full width at half maximum

Abstract

The present invention relates to the field of nanotechnology. The present invention relates to highly luminescent nanostructures, in particular ZnSe 1-x Te x Highly luminescent nanostructures are provided, including a core and a ZnS and / or ZnSe shell layer. 1-x Te x The nanostructures comprising a core and a ZnS and / or ZnSe shell layer exhibit narrow full width at half maximum and high quantum yield.The present invention also provides a method for producing the nanostructures.

Description

[Technical Field]

[0001]

[0001] The present invention relates to the field of nanotechnology. The present invention relates to highly luminescent nanostructures, in particular ZnSe 1-x Te x Highly luminescent nanostructures are provided, including a core and a ZnS and / or ZnSe shell layer. 1-x Te x The nanostructures comprising a core and a ZnS and / or ZnSe shell layer exhibit narrow full width at half maximum and high quantum yield.The present invention also provides a method for producing the nanostructures. [Background technology]

[0002]

[0002] Semiconductor nanostructures can be incorporated into a variety of electronic and optical devices. The electrical and optical properties of such nanostructures vary, for example, depending on their composition, shape, and size. For example, the size-tunable nature of semiconductor nanoparticles is of interest for applications such as light-emitting diodes (LEDs), lasers, and biomedical labels. Highly luminescent nanostructures are particularly desirable for such applications.

[0003] To realize the full potential of nanostructures in applications such as LEDs and displays, they must simultaneously meet five criteria: a narrow and symmetric emission spectrum, a high photoluminescence (PL) quantum yield (QY), high photostability, environmentally friendly materials, and low-cost mass production methods. Most previous research on highly luminescent, color-tunable quantum dots has focused on materials containing cadmium, mercury, or lead. (Wang, A., et al., Nanoscale 7:2951-2959 (2015)) However, there is growing concern that toxic materials such as cadmium, mercury, and lead pose serious threats to human health and the environment, and the European Union's Restriction of Hazardous Substances regulations prohibit the use of these materials in any consumer electronics containing more than trace amounts. Therefore, there is a need to produce cadmium-, mercury-, and lead-free materials for the manufacture of LEDs and displays.

[0004]

[0004] Electroluminescent quantum dot light-emitting devices with a BT.2020 color gamut require blue-emitting quantum dot materials with a peak wavelength in the range of 450 nm to 460 nm with a full width at half maximum (FWHM) of less than 30 nm and high quantum yield. For regulatory compliance, these materials must be cadmium- and lead-free.

[0005]

[0005] It is difficult to achieve these parameters using cadmium-free materials. As described in Ning, J., et al., Chem. Commun. 53:2626-2629 (2017), indium phosphide quantum dots grown from magic-size clusters as the smallest possible core exhibit a minimum photoluminescence peak of 460 nm (>50 nm FWHM and low quantum yield), and show a red shift upon shell coating. As described in U.S. Patent Application Publication No. 2017 / 0066965, ZnSe quantum dots with a very sharp emission peak and high quantum efficiency at a peak wavelength of up to 435 nm can be produced, but when the particles are further grown towards the target wavelength, the quantum yield efficiency decreases significantly due to insufficient electron-hole overlap in the large core.

[0006]

[0006] There is a need to prepare nanostructured compositions having a peak emission wavelength in the range of 440 nm to 460 nm and a FWHM of less than 30 nm.

Summary of the Invention

[0007]

[0007] The present disclosure provides a nanostructure comprising a core surrounded by at least one shell, wherein the core comprises ZnSe 1-x Te x (where 0 < x < 1), and at least one shell is selected from the group consisting of ZnS, ZnSe, ZnTe, and alloys thereof, and the full width at half maximum (FWHM) of the nanostructure is from about 20 nm to about 30 nm.

[0008]

[0008] In some embodiments, the FWHM is from about 25 nm to about 30 nm.

[0009]

[0009] In some embodiments, the emission wavelength of the nanostructure is between about 440 nm and about 460 nm. In some embodiments, the emission wavelength of the nanostructure is 450 - 460 nm.

[0010] In some embodiments, the nanostructure core is surrounded by two shells.

[0011] In some embodiments, at least one shell of the nanostructure comprises ZnS or ZnSe.

[0012] In some embodiments, at least one shell of the nanostructure comprises ZnSe.

[0013] In some embodiments, at least one shell of the nanostructure comprises ZnS.

[0014] In some embodiments, at least one shell of the nanostructure comprises between about 4 and about 6 monolayers of ZnSe.

[0015] In some embodiments, at least one shell of the nanostructure comprises about 6 monolayers of ZnSe.

[0016] In some embodiments, at least one shell of the nanostructure comprises between about 4 and about 6 monolayers of ZnS.

[0017] In some embodiments, at least one shell of the nanostructure comprises about four monolayers of ZnS.

[0018] In some embodiments, the photoluminescence quantum yield of the nanostructures is between about 75% and about 90%.

[0019] In some embodiments, the photoluminescence quantum yield of the nanostructures is between 80% and 90%.

[0020] In some embodiments, the FWHM of the nanostructures is between about 15 nm and about 19 nm.

[0021] In some embodiments, the nanostructure comprises two shells, the first shell comprising ZnSe and the second shell comprising ZnS.

[0022] In some embodiments, the nanostructures are quantum dots.

[0023] In some embodiments, the nanostructures are cadmium-free.

[0024]

[0024] In some embodiments, a device is provided that includes the nanostructures of the present disclosure.

[0025]

[0025] The present disclosure relates to ZnSe 1-x Te x 1. A method for producing nanocrystals, comprising: (a) combining a tellurium source, at least one ligand, and a reducing agent to form a reaction mixture; (b) contacting the reaction mixture obtained in (a) with a solution comprising at least one ligand, zinc fluoride, and a selenium source; (c) contacting the reaction mixture obtained in (b) with a zinc source; ZnSe 1-x Te x Obtaining nanocrystals; Also provided is a method including

[0026] In some embodiments, the selenium source is selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof. In some embodiments, the selenium source is trioctylphosphine selenide.

[0027] In some embodiments, the at least one ligand in (b) is selected from the group consisting of trioctylphosphine oxide, trioctylphosphine, diphenylphosphine, triphenylphosphine oxide, and tributylphosphine oxide. In some embodiments, the at least one ligand in (b) is diphenylphosphine.

[0028] In some embodiments, the tellurium source is selected from the group consisting of trioctylphosphine telluride, tri(n-butyl)phosphine telluride, trimethylphosphine telluride, triphenylphosphine telluride, tricyclohexylphosphine telluride, elemental tellurium, hydrogen telluride, bis(trimethylsilyl) telluride, and mixtures thereof. In some embodiments, the tellurium source is trioctylphosphine telluride.

[0029] In some embodiments, the reducing agent is selected from the group consisting of diborane, sodium hydride, sodium borohydride, lithium borohydride, sodium cyanoborohydride, calcium hydride, lithium hydride, lithium aluminum hydride, diisobutylaluminum hydride, sodium triethylborohydride, and lithium triethylborohydride. In some embodiments, the reducing agent is lithium triethylborohydride.

[0030] In some embodiments, the zinc source in (c) is selected from the group consisting of diethyl zinc, dimethyl zinc, diphenyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, and zinc sulfate. In some embodiments, the zinc source in (c) is diethyl zinc.

[0031] In some embodiments, the method comprises: (d) further comprising contacting the reaction mixture in (c) with a zinc carboxylate and a source of selenium.

[0032] In some embodiments, the zinc carboxylate in (d) is selected from the group consisting of zinc oleate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, and mixtures thereof. In some embodiments, the zinc carboxylate in (d) is zinc oleate.

[0033] In some embodiments, the selenium source in (d) is selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof. In some embodiments, the selenium source in (d) is trioctylphosphine selenide.

[0034] In some embodiments, the mixing in (a) is carried out at about room temperature.

[0035] In some embodiments, the contacting in (b) is carried out at a temperature between about 250° C. and about 350° C. In some embodiments, the contacting in (b) is carried out at a temperature of about 280° C.

[0036] In some embodiments, the contacting in (c) is carried out at a temperature between about 250° C. and about 350° C. In some embodiments, the contacting in (c) is carried out at a temperature of about 280° C.

[0037] In some embodiments, the contacting in (c) further comprises at least one ligand. In some embodiments, the at least one ligand is trioctylphosphine or diphenylphosphine.

[0038] In some embodiments, the contacting in (d) occurs at a temperature between about 250° C. and about 350° C. In some embodiments, the contacting in (d) occurs at a temperature of about 310° C.

[0039] In some embodiments, the contacting in (d) further comprises at least one ligand. In some embodiments, the at least one ligand is trioctylphosphine or diphenylphosphine.

[0040] The present disclosure provides a method for producing core / shell nanostructures, comprising: (e) ZnSe prepared by any one of the aforementioned methods 1-x Te x mixing the nanocrystals with a solution containing a zinc source; (f) contacting the reaction mixture of (e) with a selenium source or a sulfur source; Further provided is a method comprising:

[0041] In some embodiments, the method comprises: (g) further comprising contacting the reaction mixture of (f) with a source of selenium or a source of sulfur; the source used in (g) is different from the source used in (f).

[0042] In some embodiments, the mixing in (e) is carried out at a temperature between about 20° C. and about 310° C. In some embodiments, the mixing in (e) is carried out at a temperature between about 20° C. and about 100° C.

[0043]

[0043] In some embodiments, the zinc source of (e) is selected from the group consisting of diethyl zinc, dimethyl zinc, diphenyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oleate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, zinc oleate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, and mixtures thereof.

[0044] In some embodiments, the contacting in (f) is carried out at a temperature between about 200° C. and about 350° C. In some embodiments, the contacting in (f) is carried out at a temperature of about 310° C.

[0045] In some embodiments, in (f), the reaction mixture is contacted with a selenium source selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof.

[0046] In some embodiments, in (f), the reaction mixture is contacted with a sulfur source. In some embodiments, the sulfur source is selected from the group consisting of elemental sulfur, octanethiol, dodecanethiol, octadecanethiol, tributylphosphine sulfide, cyclohexyl isothiocyanate, α-toluenethiol, ethylene trithiocarbonate, allyl mercaptan, bis(trimethylsilyl) sulfide, trioctylphosphine sulfide, and mixtures thereof.

[0047] In some embodiments, the contacting in (f) is carried out at a temperature between about 200° C. and about 350° C. In some embodiments, the contacting in (f) is carried out at a temperature of about 310° C.

[0048] In some embodiments, in (g), the reaction mixture is contacted with a selenium source selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof.

[0049] In some embodiments, in (g), the reaction mixture is contacted with a sulfur source. In some embodiments, the sulfur source is selected from the group consisting of elemental sulfur, octanethiol, dodecanethiol, octadecanethiol, tributylphosphine sulfide, cyclohexyl isothiocyanate, α-toluenethiol, ethylene trithiocarbonate, allyl mercaptan, bis(trimethylsilyl) sulfide, trioctylphosphine sulfide, and mixtures thereof.

[0050] In some embodiments, the mixture in (e) further comprises at least one ligand. In some embodiments, the at least one ligand is selected from the group consisting of trioctylphosphine oxide, trioctylphosphine, diphenylphosphine, triphenylphosphine oxide, and tributylphosphine oxide. In some embodiments, the at least one ligand is trioctylphosphine or trioctylphosphine oxide.

[0051] In some embodiments, the nanostructures exhibit a photoluminescence quantum yield of between about 75% and about 90%. In some embodiments, the nanostructures exhibit a photoluminescence quantum yield of between about 80% and about 90%.

[0052] In some embodiments, the nanostructures have a full width at half maximum of about 20 nm to about 30 nm. In some embodiments, the nanostructures have a full width at half maximum of between about 25 nm to about 30 nm.

[0053]

[0053] The present disclosure relates to ZnSe 1-x Te x 1. A method for producing nanocrystals, comprising: (a) combining a selenium source and at least one ligand to form a reaction mixture; (b) contacting the reaction mixture obtained in (a) with a solution comprising a tellurium source, a reducing agent, and a zinc carboxylate; (c) contacting the reaction mixture obtained in (b) with a zinc source; ZnSe 1-x Te x and obtaining the nanocrystals.

[0054]

[0054] In some embodiments, the selenium source mixed in (a) is selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof.

[0055] In some embodiments, the selenium source mixed in (a) is trioctylphosphine selenide.

[0056] In some embodiments, the at least one ligand mixed in (a) is selected from the group consisting of trioctylphosphine oxide, trioctylphosphine, diphenylphosphine, triphenylphosphine oxide, and tributylphosphine oxide.

[0057] In some embodiments, at least one of the ligands mixed in (a) is trioctylphosphine.

[0058]

[0058] In some embodiments, the tellurium source in (b) is selected from the group consisting of trioctylphosphine telluride, tri(n-butyl)phosphine telluride, trimethylphosphine telluride, triphenylphosphine telluride, tricyclohexylphosphine telluride, elemental tellurium, hydrogen telluride, bis(trimethylsilyl) telluride, and mixtures thereof.

[0059] In some embodiments, the tellurium source in (b) is trioctylphosphine telluride.

[0060]

[0060] In some embodiments, the reducing agent in (b) is selected from the group consisting of diborane, sodium hydride, sodium borohydride, lithium borohydride, sodium cyanoborohydride, calcium hydride, lithium hydride, lithium aluminum hydride, diisobutylaluminum hydride, sodium triethylborohydride, and lithium triethylborohydride.

[0061] In some embodiments, the reducing agent in (b) is lithium triethylborohydride.

[0062] In some embodiments, the zinc carboxylate in (b) is selected from the group consisting of zinc oleate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, and mixtures thereof.

[0063] In some embodiments, the zinc carboxylate in (b) is zinc oleate.

[0064]

[0064] In some embodiments, the zinc source in (c) is selected from the group consisting of diethyl zinc, dimethyl zinc, diphenyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, and zinc sulfate.

[0065] In some embodiments, the zinc source in (c) is diethyl zinc.

[0066] In some embodiments, the compound includes ZnSe. 1-x Te x The nanocrystals are produced by: (d) further comprising contacting the reaction mixture in (c) with a source of zinc and a source of selenium.

[0067]

[0067] In some embodiments, the zinc source in (d) is selected from the group consisting of diethyl zinc, dimethyl zinc, diphenyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, and zinc sulfate.

[0068] In some embodiments, the zinc source in (d) is diethyl zinc.

[0069]

[0069] In some embodiments, the selenium source in (d) is selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof.

[0070] In some embodiments, the selenium source in (d) is trioctylphosphine selenide.

[0071] In some embodiments, the mixing in (a) is carried out at a temperature between about 250°C and about 350°C.

[0072] In some embodiments, the mixing in (a) is carried out at a temperature of about 300°C.

[0073]

[0073] In some embodiments, the contacting in (b) is carried out at a temperature between about 250°C and about 350°C.

[0074] In some embodiments, the contacting in (b) is carried out at a temperature of about 300°C.

[0075] In some embodiments, the contacting in (b) further comprises at least one ligand.

[0076]

[0076] In some embodiments, the contacting in (c) is carried out at a temperature between about 250°C and about 350°C.

[0077] In some embodiments, the contacting in (c) occurs at a temperature of about 300°C.

[0078] In some embodiments, the contacting in (c) further comprises at least one ligand. In some embodiments, the at least one ligand is trioctylphosphine or diphenylphosphine.

[0079]

[0079] In some embodiments, the contacting in (d) is carried out at a temperature between about 250°C and about 350°C.

[0080]

[0080] In some embodiments, the contacting in (d) is carried out at a temperature of about 300°C.

[0081] In some embodiments, the contacting in (d) further comprises at least one ligand. In some embodiments, the at least one ligand is trioctylphosphine or diphenylphosphine.

[0082]

[0082] In some embodiments, the selenium source in (a) is trioctylphosphine selenide, the tellurium source in (b) is trioctylphosphine telluride, the reducing agent in (b) is lithium triethylborohydride, the zinc carboxylate in (b) is zinc oleate, and the zinc source in (c) is diethylzinc.

[0083]

[0083] In some embodiments, the selenium source in (a) and (c) is trioctylphosphine selenide, the tellurium source in (b) is trioctylphosphine telluride, the reducing agent in (b) is lithium triethylborohydride, the zinc carboxylate in (b) is zinc oleate, and the zinc source in (c) and (d) is diethylzinc.

[0084] The present disclosure provides a method for producing core / shell nanostructures, comprising: (e) ZnSe prepared by the methods disclosed herein 1-x Te x mixing the nanocrystals with a solution containing a zinc source; (f) contacting the reaction mixture of (e) with a selenium source or a sulfur source; The present invention provides a method comprising:

[0085] In some embodiments, a method for producing a core / shell nanostructure includes: (g) further comprising contacting the reaction mixture of (f) with a source of selenium or a source of sulfur; the source used in (g) is different from the source used in (f).

[0086]

[0086] In some embodiments, the mixing in (e) is carried out at a temperature between about 20°C and about 310°C.

[0087]

[0087] In some embodiments, the mixing in (e) is carried out at a temperature between about 20°C and about 100°C.

[0088] In some embodiments, the zinc source of (e) is selected from the group consisting of diethyl zinc, dimethyl zinc, diphenyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oleate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, zinc oleate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, and mixtures thereof.

[0089]

[0089] In some embodiments, the contacting in (f) is carried out at a temperature between about 200°C and about 350°C.

[0090]

[0090] In some embodiments, the contacting in (f) is carried out at a temperature of about 310°C.

[0091] In some embodiments, the reaction mixture in (f) is contacted with a source of selenium.

[0092]

[0092] In some embodiments, the selenium source is selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof.

[0093] In some embodiments, the reaction mixture in (f) is contacted with a sulfur source.

[0094]

[0094] In some embodiments, the sulfur source is selected from the group consisting of elemental sulfur, octanethiol, dodecanethiol, octadecanethiol, tributylphosphine sulfide, cyclohexyl isothiocyanate, α-toluenethiol, ethylene trithiocarbonate, allyl mercaptan, bis(trimethylsilyl) sulfide, trioctylphosphine sulfide, and mixtures thereof.

[0095]

[0095] In some embodiments, the contacting in (f) is carried out at a temperature between about 200°C and about 350°C.

[0096] In some embodiments, the contacting in (f) is carried out at a temperature of about 310°C.

[0097] In some embodiments, the reaction mixture in (g) is contacted with a source of selenium.

[0098]

[0098] In some embodiments, the selenium source is selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof.

[0099] In some embodiments, the reaction mixture in (g) is contacted with a sulfur source.

[0100]

[0100] In some embodiments, the sulfur source is selected from the group consisting of elemental sulfur, octanethiol, dodecanethiol, octadecanethiol, tributylphosphine sulfide, cyclohexyl isothiocyanate, α-toluenethiol, ethylene trithiocarbonate, allyl mercaptan, bis(trimethylsilyl) sulfide, trioctylphosphine sulfide, and mixtures thereof.

[0101] In some embodiments, the mixture in (e) further comprises at least one ligand.

[0102] In some embodiments, the at least one ligand is selected from the group consisting of trioctylphosphine oxide, trioctylphosphine, diphenylphosphine, triphenylphosphine oxide, and tributylphosphine oxide.

[0103] In some embodiments, at least one ligand is trioctylphosphine or trioctylphosphine oxide.

[0104]

[0104] In some embodiments, the nanostructures obtained by the above methods exhibit a photoluminescence quantum yield of between about 75% and about 90%.

[0105]

[0105] In some embodiments, the nanostructures obtained by the above methods exhibit a photoluminescence quantum yield of between about 80% and about 90%.

[0106]

[0106] In some embodiments, the nanostructures obtained by the above method have a full width at half maximum of about 20 nm to about 30 nm.

[0107]

[0107] In some embodiments, the nanostructures obtained by the above method have a full width at half maximum of between about 15 nm and about 19 nm.

[0108]

[0108] The present disclosure provides a nanostructured shaped article comprising: (a) a first conductive layer; (b) a second conductive layer; (c) a nanostructured layer between the first conductive layer and the second conductive layer, the nanostructured layer including a population of nanostructures each including a core surrounded by at least one shell, the core being ZnSe 1-x Te x (where 0 < x < 1), and at least one shell being selected from the group consisting of ZnS, ZnSe, ZnTe, and alloys thereof, and providing a nanostructured article having a full width at half maximum (FWHM) of the nanostructures of from about 20 nm to about 30 nm.

[0109]

[0109] In some embodiments, the nanostructures in the nanostructured article include two shells.

[0110]

[0110] In some embodiments, at least one shell of the nanostructures in the nanostructured article is selected from the group consisting of, and at least one shell includes ZnS or ZnSe.

[0111]

[0111] In some embodiments, at least one shell of the nanostructures in the nanostructured article includes ZnSe.

[0112]

[0112] In some embodiments, at least one shell of the nanostructures in the nanostructured article includes ZnS.

[0113]

[0113] In some embodiments, at least two shells of the nanostructures in the nanostructured article include zinc.

[0114]

[0114] In some embodiments, at least one shell of the nanostructures in the nanostructured article includes ZnSe and at least one shell includes ZnS.

[0115]

[0115] In some embodiments, the nanostructures in the nanostructured article exhibit a photoluminescence quantum yield between about 75% and about 90%.

[0116]

[0116] In some embodiments, the nanostructures in the nanostructured article exhibit a photoluminescence quantum yield of between about 80% and about 90%.

[0117]

[0117] In some embodiments, the nanostructures in the nanostructured molded article exhibit a full width at half maximum of about 20 nm to about 30 nm.

[0118]

[0118] In some embodiments, the nanostructured molded articles exhibit a full width at half maximum of between about 15 nm and about 19 nm.

[0119]

[0119] In some embodiments, the nanostructures in the nanostructured shaped article comprise at least one shell comprising ZnSe and at least one shell comprising ZnS.

[0120]

[0120] In some embodiments, the nanostructures in the nanostructured molded article are quantum dots. [Brief explanation of the drawings]

[0121] [Figure 1]

[0121] Figure 1 is a flow chart comparing the synthesis of ZnSe1-xTex cores using a co-implantation method and an offset implantation method. [Figure 2]

[0122] 1 shows photoluminescence spectra in solution of ZnSe cores, ZnSe1-xTex cores prepared using the co-injection method, and ZnSe1-xTex cores prepared using the offset injection method. DETAILED DESCRIPTION OF THE INVENTION

[0122] definition

[0123] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The following definitions supplement those in the art and are directed to this application, regardless of whether they are related or unrelated, for example, to any co-owned patents or applications. Although any methods and materials similar or equivalent to those described herein can be used to test the present invention, the preferred materials and methods are described herein. Therefore, the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting.

[0123]

[0124] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a nanostructure" includes a plurality of such nanostructures, and so forth.

[0124]

[0125] As used herein, the term "about" means that a particular quantity value varies by ±10% of the stated value. For example, "about 100 nm" includes a range of sizes from 90 nm to 110 nm, inclusive.

[0125]

[0126] A "nanostructure" is a structure having at least one region or characteristic dimension that is less than about 500 nm. In some embodiments, a nanostructure has a dimension that is less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm. Typically, the region or characteristic dimension is along the shortest axis of the structure. Examples of such structures include nanowires, nanorods, nanotubes, branched nanostructures, nanotetrapods, tripods, bipods, nanocrystals, nanodots, quantum dots, nanoparticles, and the like. A nanostructure can be, for example, substantially crystalline, substantially monocrystalline, polycrystalline, amorphous, or a combination thereof. In some embodiments, each of the three dimensions of a nanostructure has a dimension that is less than about 500 nm, less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm.

[0126]

[0127] When used in reference to nanostructures, the term "heterostructure" refers to a nanostructure characterized by at least two different and / or distinguishable material types. Typically, one region of the nanostructure comprises a first material type, while a second region of the nanostructure comprises a second material type. In certain embodiments, the nanostructure comprises a core of a first material and at least one shell of a second (or third, etc.) material, with the different material types distributed radially, e.g., relative to the long axis of a nanowire, the long axis of an arm of a branched nanowire, or the center of a nanocrystal. A shell can, but need not, completely cover an adjacent material to be considered a shell or for the nanostructure to be considered a heterostructure; for example, a nanocrystal characterized by one material covered with small islands of a second material is a heterostructure. In other embodiments, the different material types are distributed at different locations within the nanostructure, e.g., along the major (long) axis of a nanowire or along the long axis of an arm of a branched nanowire. Different regions within a heterostructure can comprise entirely different materials, or the different regions can comprise a base material (eg, silicon) with different dopants or different concentrations of the same dopant.

[0127]

[0128] As used herein, the "diameter" of a nanostructure refers to the diameter of a cross section perpendicular to the first axis of the nanostructure, where the first axis has the greatest difference in length from the second and third axes (the second and third axes being the two axes closest in length to each other). The first axis is not necessarily the longest axis of the nanostructure; for example, in the case of a disk-shaped nanostructure, the cross section is a substantially circular cross section perpendicular to the short longitudinal axis of the disk. If the cross section is not circular, the diameter is the average of the long and short axes of the cross section. For elongated or high aspect ratio nanostructures such as nanowires, the diameter is measured across a cross section perpendicular to the longest axis of the nanowire. For spherical nanostructures, the diameter is measured from one side to the other through the center of the sphere.

[0128]

[0129] The terms "crystalline" or "substantially crystalline," when used in connection with a nanostructure, mean that the nanostructure typically exhibits long-range order across one or more dimensions of the structure. Those skilled in the art will understand that the term "long-range order" depends on the absolute size of a particular nanostructure, since the order of a crystal cannot extend beyond the boundaries of the crystal. In this case, "long-range order" refers to substantial order across at least most of the dimensions of the nanostructure. In some cases, the nanostructure may have an oxide or other coating, or may be composed of a core and at least one shell. In such cases, it will be recognized that the oxide, shell, or other coating may, but need not, exhibit such order (e.g., it may be amorphous, polycrystalline, etc.). In such cases, the phrases "crystalline," "substantially crystalline," "substantially monocrystalline," or "monocrystalline" refer to the central core of the nanostructure (excluding coating layers and shells). As used herein, the terms "crystalline" or "substantially crystalline" are intended to encompass structures containing various defects, stacking faults, atomic substitutions, and the like, so long as the structure exhibits substantial long-range order (e.g., order over at least about 80% of the length of at least one axis of the nanostructure or its core). Furthermore, it will be recognized that the interface between the core and the exterior of the nanostructure, or between the core and an adjacent shell, or between a shell and a second adjacent shell, may comprise a non-crystalline region or may even be amorphous. This does not prevent a nanostructure from being crystalline or substantially crystalline as defined herein.

[0129]

[0130] When used in reference to a nanostructure, the term "monocrystalline" indicates that the nanostructure is substantially crystalline and comprises substantially one crystal. When used in reference to a nanostructure comprising a core and one or more shells, the term "monocrystalline" indicates that the core is substantially crystalline and comprises substantially one crystal.

[0130]

[0131] A "nanocrystal" is a nanostructure that is substantially monocrystalline. Thus, a nanocrystal has at least one region or characteristic dimension that is less than about 500 nm. In some embodiments, a nanocrystal has a dimension that is less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm. The term "nanocrystal" is intended to include substantially monocrystalline nanostructures that contain various defects, stacking faults, atomic substitutions, etc., as well as substantially monocrystalline nanostructures that are free of such defects, stacking faults, and substitutions. In the case of nanocrystal heterostructures that include a core and one or more shells, the core of the nanocrystal is typically substantially monocrystalline, but the shells need not be. In some embodiments, each of the three dimensions of the nanocrystal is less than about 500 nm, less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm.

[0131]

[0132] The term "quantum dot" (or "dot") refers to a nanocrystal that exhibits quantum or exciton confinement. Quantum dots can be substantially homogeneous in material properties or, in some embodiments, heterogeneous, e.g., comprising a core and at least one shell. The optical properties of quantum dots can be affected by their particle size, chemical composition, and / or surface composition and can be determined by appropriate optical tests available in the art. The ability to tune nanocrystal size, e.g., within a range between about 1 nm and about 15 nm, allows for a photoemission range across the optical spectrum, providing great flexibility in color rendering.

[0132]

[0133] A "ligand" is a molecule capable of interacting (either weakly or strongly) with one or more faces of a nanostructure, for example, through covalent interactions, ionic interactions, van der Waals interactions, or other molecular interactions with the surface of the nanostructure.

[0133]

[0134] "Photoluminescence quantum yield" is the ratio of photons emitted to photons absorbed, e.g., by a nanostructure or population of nanostructures. As known in the art, quantum yield is typically determined by comparative methods using well-characterized standards with known quantum yield values.

[0134]

[0135] "Peak emission wavelength" (PWL) is the wavelength at which the radiometric emission spectrum of a light source reaches its maximum.

[0135]

[0136] As used herein, the term "shell" refers to a material deposited on a core or on a previously deposited shell of the same or different composition, resulting from a single deposition of the shell material. The exact shell thickness is determined by the amount and conversion of the material and precursors used and can be reported in nanometers or monolayers. As used herein, "target shell thickness" refers to the intended shell thickness used to calculate the amount of precursor required. As used herein, "actual shell thickness" refers to the actual amount of shell material deposited after synthesis and can be measured by methods well known in the art. For example, the actual shell thickness can be measured by comparing the particle size determined from transmission electron microscope (TEM) images of nanocrystals before and after shell synthesis.

[0136]

[0137] As used herein, the term "monolayer" is a measure of shell thickness derived from the bulk crystal structure of the shell material as the shortest distance between related lattice planes. For example, for a cubic lattice structure, the thickness of one monolayer is defined as the distance between adjacent lattice planes in the

[0111] direction. For example, one monolayer of cubic ZnSe corresponds to a thickness of 0.328 nm, and one monolayer of cubic ZnS corresponds to a thickness of 0.31 nm. The thickness of a monolayer of an alloy material can be determined from the composition of the alloy by Vegard's law.

[0137]

[0138] As used herein, the term "full width at half maximum" (FWHM) is a measure of the size distribution of quantum dots. The emission spectrum of quantum dots generally has the shape of a Gaussian curve. The width of the Gaussian curve is defined as the FWHM and provides an understanding of the particle size distribution. A smaller FWHM corresponds to a narrower quantum dot nanocrystal size distribution. The FWHM also depends on the emission wavelength maximum.

[0138]

[0139] As used herein, the term "external quantum efficiency" (EQE) is the ratio of the number of photons emitted from a light-emitting diode (LED) to the number of electrons passing through the device. EQE measures how efficiently an LED converts electrons into photons and emits them. EQE is calculated using the formula: EQE = [Injection efficiency] × [Solid state quantum yield] × [Extraction efficiency] can be evaluated using where: Injection efficiency = fraction of electrons injected through the device into the active region; Solid quantum yield = the ratio of all electron-hole recombinations in the activated region that are radiative and therefore generate photons; Extraction efficiency = the fraction of photons generated in the active region that are emitted from the device.

[0139]

[0140] Unless expressly stated otherwise, ranges recited herein are inclusive of both endpoints.

[0140]

[0141] Various additional terms are defined or otherwise characterized herein.

[0141] Fabrication of nanostructures

[0142] Various methods for colloidal synthesis of nanostructures are known in the art, including techniques for controlling the growth of nanostructures, e.g., to control the size and / or shape distribution of the resulting nanostructures.

[0142]

[0143] In a typical colloidal synthesis, semiconductor nanostructures are produced by rapidly injecting pyrolyzed precursors into a hot solution (e.g., a hot solvent and / or surfactant). The precursors can be injected simultaneously or sequentially. The precursors react rapidly to form nuclei. Nanostructure growth occurs by the addition of monomers to these nuclei.

[0143]

[0144] The surfactant molecules interact with the surface of the nanostructures. At growth temperatures, the surfactant molecules rapidly adsorb and desorb from the nanostructure surface, allowing for the addition and / or removal of atoms from the nanostructure while suppressing aggregation of the growing nanostructures. In general, surfactants that weakly coordinate to the nanostructure surface allow for rapid growth of the nanostructures, while surfactants that bind more strongly to the nanostructure surface cause slower nanostructure growth. The surfactant may also interact with one (or more) precursors to slow down the growth of the nanostructures.

[0144]

[0145] Growth of nanostructures in the presence of a single surfactant typically results in spherical nanostructures, but growth can be controlled to produce non-spherical nanostructures using a mixture of two or more surfactants, for example, when two (or more) surfactants adsorb differently on different crystalline faces of the growing nanostructure.

[0145]

[0146] Thus, numerous factors are known to influence nanostructure growth, which can be manipulated, independently or in combination, to control the size and / or shape distribution of the resulting nanostructures, including, for example, temperature (nucleation and / or growth), precursor composition, time-dependent precursor concentration, ratio of precursors to each other, surfactant composition, number of surfactants, and ratio of surfactants to each other and / or ratio of surfactants to precursors to each other.

[0146]

[0147] Synthesis of II-VI nanostructures is described, for example, in U.S. Pat. No. 6,225,198, U.S. Pat. No. 6,322,901, U.S. Pat. No. 6,207,229, U.S. Pat. No. 6,607,829, U.S. Pat. No. 7,060,243, U.S. Pat. No. 7,374,824, U.S. Pat. No. 6,861,155, U.S. Pat. No. 7,125,605, U.S. Pat. No. 7,566,476, U.S. Pat. No. 8,158,193, and U.S. Pat. No. 8,101,234, as well as U.S. Patent Application Publication Nos. 2011 / 0262752 and 2011 / 0263062.

[0147]

[0148] Although II-VI nanostructures such as CdSe / CdS / ZnS core / shell quantum dots can exhibit desirable luminescence behavior, as discussed above, issues such as the toxicity of cadmium limit the applications in which such nanostructures can be used. Therefore, less toxic alternatives with favorable luminescence properties are highly desirable.

[0148]

[0149] In some embodiments, the nanostructures are cadmium-free. As used herein, the term "cadmium-free" refers to nanostructures containing less than 100 ppm by weight of cadmium. Restriction of Hazardous Substances (RoHS) compliance regulations require homogeneous precursor raw materials to contain no more than 0.01% by weight (100 ppm by weight) of cadmium. The cadmium level in the Cd-free nanostructures of the present invention is limited to trace metal concentrations in the precursor materials. The trace metal (including cadmium) concentrations in precursor materials for Cd-free nanostructures are measured by inductively coupled plasma mass spectrometry (ICP-MS) analysis and are in parts per billion (ppb) levels. In some embodiments, nanostructures that are "cadmium-free" contain less than about 50 ppm, less than about 20 ppm, less than about 10 ppm, or less than about 1 ppm of cadmium.

[0149] ZnSe 1-x Te x Core manufacturing

[0150] Using density functional theory (DFT) calculations, localization of Te atoms at the center of the ZnSe core is predicted to result in a red shift in the observed emission spectrum while maintaining Type I overlap between the electron and hole wave functions in the conduction and valence bands. Type I overlap occurs in nanocrystals where the exciton-exciton interaction is attractive and therefore the interaction energy is negative (Piryatinski, A., et al., Nano Letters 7(1):108-115 (2007)). On the other hand, spatial separation of the electron and hole can increase the repulsive component of the interaction energy, thereby reversing its sign. In the case of strongly confined Type II nanocrystals, this approach not only results in overall exciton-exciton repulsion but also in a large amount of interaction energy, which can arise due to the very small separation between the interacting charges.

[0150]

[0151] The peak broadening is believed to be due to variations in the location and number of Te atoms throughout the quantum dot core. Trioctylphosphine telluride is known to decompose to elemental Te, which can be slowly reduced to Te. 2- See U.S. Patent No. 8,637,082. This reaction is not compatible with the reaction between diethylzinc and trioctylphosphine selenide, resulting in low and poorly controlled incorporation of Te atoms into ZnSe. 2- Improved ZnTe nanomaterials were obtained by using a strong reducing agent with trioctylphosphine telluride to promote the formation of (See Zhang, J., et al., J. Phys. Chem. C. 112(14):5454-5458 (2008) which describes the use of zinc carboxylate to prevent the formation of elemental zinc.

[0151]

[0152] One conventional preparation procedure for the ZnSe core involves reducing trioctylphosphine telluride with superhydride in an oleylamine solution, which forms a purple solution. Mixing this purple solution with one equivalent of zinc carboxylate dissolved in trioctylphosphine forms a colorless, turbid mixture that is still of low viscosity sufficient for rapid injection. This turbid mixture is co-injected with diethylzinc into trioctylphosphine selenide (in an amount of telluride at an 8 mole percent value). After growing and washing the core, the core is coated with a shell as described in U.S. Patent Application Publication No. 2017 / 066965, which is hereby incorporated by reference in its entirety.

[0152]

[0153] In some embodiments, the nanostructure comprises a ZnSe 1-x Te x core, where 0 < x < 1, 0 < x < 0.5, 0 < x < 0.25, 0 < x < 0.1, 0 < x < 0.05, 0 < x < 0.02, 0 < x < 0.01, 0.01 < x < 0.5, 0.01 < x < 0.25, 0.01 < x < 0.1, 0.01 < x < 0.0, 0.01 < x < 0.02, 0.02 < x < 0.5, 0.02 < x < 0.25, 0.02 < x < 0.1, 0.02 < x < 0.05, 0.05 < x < 0.5, 0.05 < x < 0.25, 0.05 < x < 0.1, 0.1 < x < 0.5, 0 < x < 0.25, or 0.5 < x < 0. (The last inequality seems incorrect in the original, assuming it should be 0.5 < x < 1 perhaps, but translating as is for now.)

[0153]

[0154] ZnSe 1-x Te x The diameter of the core can be controlled by varying the amount of precursor supplied. ZnSe 1-x Te x The diameter of the core can be determined using techniques well known to those skilled in the art. In some embodiments, ZnSe 1-x Te x The diameter of the core is determined using transmission electron microscopy (TEM).

[0154]

[0155] In some embodiments, each ZnSe 1-x Te xThe core may be between about 1.0 nm and about 7.0 nm, between about 1.0 nm and about 6.0 nm, between about 1.0 nm and about 5.0 nm, between about 1.0 nm and about 4.0 nm, between about 1.0 nm and about 3.0 nm, between about 1.0 nm and about 2.0 nm, between about 2.0 nm and about 7.0 nm, between about 2.0 nm and about 6.0 nm, between about 2.0 nm and about 5.0 nm, between about 2.0 nm and about 4.0 nm, between about 2.0 nm and about 3. In some embodiments, the ZnSe has a diameter between about 3.0 nm and about 7.0 nm, between about 3.0 nm and about 6.0 nm, between about 3.0 nm and about 5.0 nm, between about 3.0 nm and about 4.0 nm, between about 4.0 nm and about 7.0 nm, between about 4.0 nm and about 6.0 nm, between about 4.0 nm and about 5.0 nm, between about 5.0 nm and about 7.0 nm, between about 5.0 nm and about 6.0 nm, or between about 6.0 nm and about 7.0 nm. 1-x Te x The core has a diameter between about 3.0 nm and about 5.0 nm.

[0155]

[0156] This disclosure relates to ZnSe 1-x Te x 1. A method for producing nanocrystals, comprising: (a) combining a tellurium source, at least one ligand, and a reducing agent to form a reaction mixture; (b) contacting the reaction mixture obtained in (a) with a solution comprising at least one ligand, zinc fluoride, and a selenium source; (c) contacting the reaction mixture obtained in (b) with a zinc source; ZnSe 1-x Te x Obtaining nanocrystals; Also provided is a method comprising:

[0156]

[0157] In some embodiments, the present invention provides ZnSe 1-x Te x 1. A method for producing nanocrystals, comprising: (a) combining a selenium source and at least one ligand to form a reaction mixture; (b) contacting the reaction mixture obtained in (a) with a solution comprising a tellurium source, a reducing agent, and a zinc carboxylate; (c) contacting the reaction mixture obtained in (b) with a zinc source; ZnSe 1-x Te x Obtaining nanocrystals; The present invention provides a method comprising:

[0157]

[0158] In some embodiments, the present invention provides ZnSe 1-x Te x 1. A method for producing nanocrystals, comprising: (a) combining a selenium source and at least one ligand to form a reaction mixture; (b) contacting the reaction mixture obtained in (a) with a solution comprising a tellurium source, a reducing agent, and a zinc carboxylate; (c) contacting the reaction mixture obtained in (b) with a zinc source; (d) contacting the reaction mixture in (c) with a zinc source and a selenium source; ZnSe 1-x Te x Obtaining nanocrystals; The present invention provides a method comprising:

[0158]

[0159] In some embodiments, the selenium source is selected from trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, cyclohexylphosphine selenide, octaselenol, dodecaselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, and mixtures thereof. In some embodiments, the selenium source is trioctylphosphine selenide (TOPSe).

[0159]

[0160] In some embodiments, ZnSe 1-x Te xThe core is synthesized in the presence of at least one nanostructure ligand. The ligand can, for example, improve the miscibility of the nanostructures in a solvent or polymer (allowing them to be distributed throughout the composition so they do not clump together), increase the quantum yield of the nanostructures, and / or maintain the luminescence of the nanostructures (e.g., when the nanostructures are incorporated into a matrix). In some embodiments, the ligands used for core synthesis and shell synthesis are the same. In some embodiments, the ligands used for core synthesis and shell synthesis are different. After synthesis, any ligands on the surface of the nanostructures can be exchanged for different ligands with other desired properties. Exemplary ligands are disclosed in U.S. Patent Application Publication No. 2005 / 0205849, U.S. Patent Application Publication No. 2008 / 0105855, U.S. Patent Application Publication No. 2008 / 0118755, U.S. Patent Application Publication No. 2009 / 0065764, U.S. Patent Application Publication No. 2010 / 0140551, U.S. Patent Application Publication No. 2013 / 0345458, U.S. Patent Application Publication No. 2014 / 0151600, U.S. Patent Application Publication No. 2014 / 0264189, and U.S. Patent Application Publication No. 2014 / 0001405.

[0160]

[0161] In some embodiments, ZnSe 1-x Te xLigands suitable for synthesizing nanostructured cores, including cores, are well known to those skilled in the art. In some embodiments, the ligand is a fatty acid selected from lauric acid, caproic acid, myristic acid, palmitic acid, stearic acid, and oleic acid. In some embodiments, the ligand is an organophosphine or organophosphine oxide selected from trioctylphosphine oxide (TOPO), trioctylphosphine (TOP), diphenylphosphine (DPP), triphenylphosphine oxide, and tributylphosphine oxide. In some embodiments, the ligand is an amine selected from dodecylamine, oleylamine, hexadecylamine, and octadecylamine. In some embodiments, the ligand is trioctylphosphine (TOP). In some embodiments, the ligand is oleylamine.

[0161]

[0162] In some embodiments, the core is prepared in the presence of a mixture of ligands. In some embodiments, the core is prepared in the presence of a mixture comprising two, three, four, five, or six different ligands. In some embodiments, the core is prepared in the presence of a mixture comprising three different ligands. In some embodiments, the mixture of ligands comprises oleylamine, diphenylphosphine, and trioctylphosphine.

[0162]

[0163] In some embodiments, the selenium source and ligand are reacted in (a) at a temperature between about 250°C and about 350°C, between about 250°C and about 320°C, between about 250°C and about 300°C, between about 250°C and about 290°C, between about 250°C and about 280°C, between about 250°C and about 270°C, between about 270°C and about 350°C, between about 270°C and about 320°C, between about 270°C and about 300°C, between about 270°C and about 290°C. The selenium source and ligand are combined in (a) at a reaction temperature of about 270°C to about 280°C, about 280°C to about 350°C, about 280°C to about 320°C, about 280°C to about 300°C, about 280°C to about 290°C, about 290°C to about 350°C, about 290°C to about 320°C, about 290°C to about 300°C, about 300°C to about 350°C, about 300°C to about 320°C, or about 320°C to about 350°C. In some embodiments, the selenium source and ligand are combined in (a) at a reaction temperature of about 300°C.

[0163]

[0164] In some embodiments, the reaction mixture after combining the selenium source and ligand in (a) is maintained at an elevated temperature for about 2 to about 20 minutes, about 2 to about 15 minutes, about 2 to about 10 minutes, about 2 to about 8 minutes, about 2 to about 5 minutes, about 5 to about 20 minutes, about 5 to about 15 minutes, about 5 to about 10 minutes, about 5 to about 8 minutes, about 8 to about 20 minutes, about 8 to about 15 minutes, about 8 to about 10 minutes, about 10 to about 20 minutes, about 10 to about 15 minutes, or about 15 to about 20 minutes.

[0164]

[0165] In some embodiments, the solution comprising the tellurium source, the reducing agent, and the zinc carboxylate in (b) is prepared separately. In some embodiments, the solution comprising the tellurium source, the reducing agent, and the zinc carboxylate in (b) is prepared in situ.

[0165]

[0166] In some embodiments, the solutions containing the tellurium source, the reducing agent, and the zinc carboxylate in (b) are prepared separately. In some embodiments, the method for preparing the tellurium solution comprises: (a) combining a tellurium source and a ligand to form a reaction mixture; (b) contacting the reaction mixture in (a) with a reducing agent; (c) contacting the reaction mixture in (b) with a zinc carboxylate; Obtaining a tellurium solution; Includes:

[0166]

[0167] In some embodiments, the tellurium source is selected from trioctylphosphine telluride, tri(n-butyl)phosphine telluride, trimethylphosphine telluride, triphenylphosphine telluride, tricyclohexylphosphine telluride, elemental tellurium, hydrogen telluride, bis(trimethylsilyl) telluride, and mixtures thereof. In some embodiments, the tellurium source is trioctylphosphine telluride (TOPTe).

[0167]

[0168] In some embodiments, the reducing agent is selected from diborane, sodium hydride, sodium borohydride, lithium borohydride, sodium cyanoborohydride, calcium hydride, lithium hydride, lithium aluminum hydride, diisobutylaluminum hydride, sodium triethylborohydride, and lithium triethylborohydride, hi some embodiments, the reducing agent is lithium triethylborohydride.

[0168]

[0169] In some embodiments, the zinc carboxylate is produced by reacting a zinc salt with a carboxylic acid.

[0169]

[0170] In some embodiments, the zinc salt is selected from zinc acetate, zinc fluoride, zinc chloride, zinc bromide, zinc iodide, zinc nitrate, zinc triflate, zinc tosylate, zinc mesylate, zinc oxide, zinc sulfate, zinc acetylacetonate, zinc toluene-3,4-dithiolate, zinc p-toluenesulfonate, zinc diethyldithiocarbamate, zinc dibenzyldithiocarbamate, and mixtures thereof.

[0170]

[0171] In some embodiments, the carboxylic acid is acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, heptanoic acid, caprylic acid, capric acid, undecanoic acid, lauric acid, myristic acid, palmitic acid, stearic acid, behenic acid, acrylic acid, methacrylic acid, but-2-enoic acid, but-3-enoic acid, pent-2-enoic acid, pent-4-enoic acid, hex-2-enoic acid, hex-3-enoic acid, hex-4-enoic acid, hex-5-enoic acid, hepta-6-enoic acid, hexa ... The carboxylic acid may be selected from the group consisting of 10-enoic acid, oct-2-enoic acid, dec-2-enoic acid, undec-10-enoic acid, dodec-5-enoic acid, oleic acid, gadoleic acid, erucic acid, linoleic acid, α-linolenic acid, calendic acid, eicosadienoic acid, eicosatrienoic acid, arachidonic acid, stearidonic acid, benzoic acid, paratoluic acid, orthotoluic acid, metatoluic acid, hydrocinnamic acid, naphthenic acid, cinnamic acid, paratoluenesulfonic acid, and mixtures thereof.

[0171]

[0172] In some embodiments, the zinc carboxylate is zinc stearate or zinc oleate. In some embodiments, the zinc carboxylate is zinc oleate.

[0172]

[0173] In some embodiments, the solution comprising the tellurium source, the reducing agent, and the zinc carboxylate in (b) is heated to a temperature between about 250°C and about 350°C, between about 250°C and about 320°C, between about 250°C and about 300°C, between about 250°C and about 290°C, between about 250°C and about 280°C, between about 250°C and about 270°C, between about 270°C and about 350°C, between about 270°C and about 320°C, between about 270°C and about 300°C, between about 270°C and about 290°C, The reaction mixture is added at a reaction temperature of between about 0°C, between about 270°C and about 280°C, between about 280°C and about 350°C, between about 280°C and about 320°C, between about 280°C and about 300°C, between about 280°C and about 290°C, between about 290°C and about 350°C, between about 290°C and about 320°C, between about 290°C and about 300°C, between about 300°C and about 350°C, between about 300°C and about 320°C, or between about 320°C and about 350°C. In some embodiments, the solution comprising the tellurium source, reducing agent, and zinc carboxylate in (b) is added to the reaction mixture at a reaction temperature of about 300°C.

[0173]

[0174] In some embodiments, the reaction mixture after adding the solution containing the tellurium source, the reducing agent, and the zinc carboxylate in (b) is contacted with a zinc source in (c).

[0174]

[0175] In some embodiments, after adding the solution in (b) comprising the tellurium source, the reducing agent, and the zinc carboxylate, the zinc source in (c) is added to the reaction mixture over a period of about 1 second to about 5 minutes, about 1 second to about 3 minutes, about 1 second to about 1 minute, about 1 second to about 30 seconds, about 1 second to about 10 seconds, about 1 second to about 5 seconds, about 5 seconds to about 5 minutes, about 5 seconds to about 3 minutes, about 5 seconds to about 1 minute, about 5 seconds to about 30 seconds, about 5 seconds to about 10 seconds, about 10 seconds to about 5 minutes, about 10 seconds to about 3 minutes, about 10 seconds to about 1 minute, about 10 seconds to about 30 seconds, about 30 seconds to about 5 minutes, about 30 seconds to about 3 minutes, about 30 seconds to about 1 minute, about 1 minute to about 5 minutes, about 1 minute to about 3 minutes, or about 3 minutes to about 5 minutes. In some embodiments, after adding the solution in (b) comprising the tellurium source, the reducing agent, and the zinc carboxylate, the zinc source in (c) is added to the reaction mixture for about 1 second to 5 seconds.

[0175]

[0176] In some embodiments, the zinc source is heated to between about 250°C and about 350°C, between about 250°C and about 320°C, between about 250°C and about 300°C, between about 250°C and about 290°C, between about 250°C and about 280°C, between about 250°C and about 270°C, between about 270°C and about 350°C, between about 270°C and about 320°C, between about 270°C and about 300°C, between about 270°C and about 290°C, between about 270°C and about 280°C. In some embodiments, the zinc source in (c) is added to the reaction mixture at a reaction temperature of about 280° C. to about 350° C., about 280° C. to about 320° C., about 280° C. to about 300° C., about 280° C. to about 290° C., about 290° C. to about 350° C., about 290° C. to about 320° C., about 290° C. to about 300° C., about 300° C. to about 350° C., about 300° C. to about 320° C., or about 320° C. to about 350° C. In some embodiments, the zinc source in (c) is added to the reaction mixture at a reaction temperature of about 300° C.

[0176]

[0177] In some embodiments, the zinc source in (c) is a dialkyl zinc compound. In some embodiments, the zinc source is diethyl zinc, dimethyl zinc, diphenyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, or zinc sulfate. In some embodiments, the zinc source is diethyl zinc or dimethyl zinc. In some embodiments, the zinc source is diethyl zinc.

[0177]

[0178] In some embodiments, the mole percentage of the tellurium source relative to the zinc source is between about 1% and about 20%, between about 1% and about 15%, between about 1% and about 10%, between about 1% and about 8%, between about 1% and about 6%, between about 1% and about 4%, between about 1% and about 2%, between about 2% and about 20%, between about 2% and about 15%, between about 2% and about 10%, between about 2% and about 8%, between about 2% and about 6%, between about 2% and about 4%, Between about 4% and about 20%, between about 4% and about 15%, between about 4% and about 10%, between about 4% and about 8%, between about 4% and about 6%, between about 6% and about 20%, between about 6% and about 15%, between about 6% and about 10%, between about 6% and about 8%, between about 8% and about 20%, between about 8% and about 15%, between about 8% and about 10%, between about 10% and about 20%, between about 10% and about 15%, or between about 15% and about 20%. In some embodiments, the mole percentage of the tellurium source relative to the zinc source is between about 6% and about 10%. In some embodiments, the mole percentage of the tellurium source relative to the zinc source is about 8%.

[0178]

[0179] In some embodiments, the reaction mixture after adding the zinc source in (c) is contacted with a zinc source and a selenium source. In some embodiments, the zinc source and the selenium source are contacted in (d) at a temperature between about 250°C and about 350°C, between about 250°C and about 320°C, between about 250°C and about 300°C, between about 250°C and about 290°C, between about 250°C and about 280°C, between about 250°C and about 270°C, between about 270°C and about 350°C, between about 270°C and about 320°C, between about 270°C and about 300°C, between about 270°C and about 290°C, or between about 280°C. The zinc source and selenium source in (d) are added to the reaction mixture at a reaction temperature of about 270°C to about 280°C, about 280°C to about 350°C, about 280°C to about 320°C, about 280°C to about 300°C, about 280°C to about 290°C, about 290°C to about 350°C, about 290°C to about 320°C, about 290°C to about 300°C, about 300°C to about 350°C, about 300°C to about 320°C, or about 320°C to about 350°C. In some embodiments, the zinc source and selenium source in (d) are added to the reaction mixture at a reaction temperature of about 280°C.

[0179]

[0180] In some embodiments, the zinc source and selenium source are reacted in (d) for about 2 to about 120 minutes, about 2 to about 60 minutes, about 2 to about 30 minutes, about 2 to about 20 minutes, about 2 to about 15 minutes, about 2 to about 10 minutes, about 2 to about 8 minutes, about 2 to about 5 minutes, about 5 to about 120 minutes, about 5 to about 60 minutes, about 5 to about 30 minutes, about 5 to about 20 minutes, about 5 to about 15 minutes, about 5 to about 10 minutes, about 5 to about 8 minutes, about 8 to about 120 minutes, about 8 to about 60 minutes, about 8 to about 30 minutes, about 8 to about 8 ... In some embodiments, the zinc source and selenium source are added over a period of about 20 minutes to about 20 minutes, about 8 to about 15 minutes, about 8 to about 10 minutes, about 10 to about 120 minutes, about 10 to about 60 minutes, about 10 to about 30 minutes, about 10 to about 20 minutes, about 10 to about 15 minutes, about 15 to about 120 minutes, about 15 to about 60 minutes, about 15 to about 30 minutes, about 15 to about 20 minutes, about 20 to about 120 minutes, about 20 to about 60 minutes, about 20 to about 30 minutes, about 30 to about 120 minutes, about 30 to about 60 minutes, or about 60 to about 120 minutes. In some embodiments, the zinc source and selenium source are added over a period of about 20 minutes to about 30 minutes.

[0180]

[0181] In some embodiments, the reaction mixture after adding the zinc source and selenium source in (d) is maintained at an elevated temperature for about 2 to about 20 minutes, about 2 to about 15 minutes, about 2 to about 10 minutes, about 2 to about 8 minutes, about 2 to about 5 minutes, about 5 to about 20 minutes, about 5 to about 15 minutes, about 5 to about 10 minutes, about 5 to about 8 minutes, about 8 to about 20 minutes, about 8 to about 15 minutes, about 8 to about 10 minutes, about 10 to about 20 minutes, about 10 to about 15 minutes, or about 15 to about 20 minutes. In some embodiments, the reaction mixture after adding the zinc source and selenium source in (d) is maintained at an elevated temperature for about 2 to about 10 minutes.

[0181]

[0182] When more precursor is added, ZnSe 1-x Te x To prevent core precipitation, additional ligands can be added during the growth stage. If too much ligand is added during the initial nucleation stage, the concentrations of the zinc, selenium, and tellurium sources will become too low, preventing effective nucleation. Therefore, the ligand is added slowly throughout the growth stage. In some embodiments, the additional ligand is oleylamine.

[0182]

[0183] ZnSe 1-x Te x After the cores reach the desired thickness and diameter, they can be cooled. In some embodiments, ZnSe 1-x Te x The core is cooled to room temperature. In some embodiments, ZnSe 1-x Te x An organic solvent is added to dilute the reaction mixture containing the cores.

[0183]

[0184] In some embodiments, the organic solvent is hexane, pentane, toluene, benzene, diethyl ether, acetone, ethyl acetate, dichloromethane (methylene chloride), chloroform, dimethylformamide, or N-methylpyrrolidinone. In some embodiments, the organic solvent is toluene.

[0184]

[0185] In some embodiments, ZnSe 1-x Te x The core is isolated. In some embodiments, the ZnSe 1-x Te x The core is ZnSe from the solvent. 1-x Te x In some embodiments, ZnSe is isolated by precipitating the 1-x Te x The core is isolated by precipitation with ethanol.

[0185]

[0186] ZnSe prepared using the methods described herein 1-x Te x The core size distribution can be relatively narrow. In some embodiments, the photoluminescence spectrum of the population or core / shell nanostructure prepared using the methods described herein has a full width at half maximum of between about 10 nm and about 30 nm, between about 10 nm and about 25 nm, between about 10 nm and about 20 nm, between about 10 nm and about 22 nm, between about 10 nm and about 15 nm, between about 15 nm and about 30 nm, between about 15 nm and about 25 nm, between about 15 nm and about 22 nm, between about 15 nm and about 20 nm, between about 20 nm and about 30 nm, between about 20 nm and about 25 nm, between about 20 nm and about 22 nm, between about 22 nm and about 30 nm, between about 22 nm and about 25 nm, or between about 25 nm and about 30 nm. In some embodiments, the photoluminescence spectrum of the population or ZnSe prepared using the methods described herein has a full width at half maximum of between about 10 nm and about 30 nm, between about 10 nm and about 25 nm, between about 10 nm and about 20 nm, between about 20 nm and about 22 nm, between about 22 nm and about 30 nm, between about 22 nm and about 25 nm, or between about 25 nm and about 30 nm. 1-x Te x The photoluminescence spectrum of the core has a full width at half maximum between about 15 nm and about 22 nm.

[0186] Shell manufacturing

[0187] In some embodiments, the nanostructures of the present invention comprise a core and at least one shell. In some embodiments, the nanostructures of the present invention comprise a core and at least two shells. The shells can, for example, increase the quantum yield and / or stability of the nanostructure. In some embodiments, the core and shell comprise different materials. In some embodiments, the nanostructures comprise multiple shells of different shell materials.

[0187]

[0188] In some embodiments, a shell comprising a mixture of Group II and Group VI elements is deposited on the core or core / shell structure. In some embodiments, the deposited shell is a mixture of at least two of a zinc source, a selenium source, a sulfur source, and a tellurium source. In some embodiments, the deposited shell is a mixture of two of a zinc source, a selenium source, a sulfur source, and a tellurium source. In some embodiments, the deposited shell is a mixture of three of a zinc source, a selenium source, a sulfur source, and a tellurium source. In some embodiments, the shell comprises zinc and sulfur; zinc and selenium; zinc, sulfur, and selenium; zinc and tellurium; zinc, tellurium, and sulfur; or zinc, tellurium, and selenium.

[0188]

[0189] In some embodiments, the shell comprises more than one monolayer of shell material. The number of monolayers is an average across all nanostructures, so the number of monolayers in a shell may be a fraction. In some embodiments, the number of monolayers in a shell is between about 0.25 and about 10, between about 0.25 and about 8, between about 0.25 and about 7, between about 0.25 and about 6, between about 0.25 and about 5, between about 0.25 and about 4, between about 0.25 and about 3, between about 0.25 and about 2, between about 2 and about 10, between about 2 and about 8, between about 2 and about 7, between about 2 and about 6, between about 2 and about 5, between about 2 and about 4, between about 2 and about 3, or between about 3 and about 1. 0, between about 3 and about 8, between about 3 and about 7, between about 3 and about 6, between about 3 and about 5, between about 3 and about 4, between about 4 and about 10, between about 4 and about 8, between about 4 and about 7, between about 4 and about 6, between about 4 and about 5, between about 5 and about 10, between about 5 and about 8, between about 5 and about 7, between about 5 and about 6, between about 6 and about 10, between about 6 and about 8, between about 6 and about 7, between about 7 and about 10, between about 7 and about 8, or between about 8 and about 10. In some embodiments, the shell comprises between about 3 and about 6 monolayers.

[0189]

[0190] The thickness of the shell can be controlled by varying the amount of precursors provided. For a particular shell thickness, at least one precursor is optionally provided in an amount that results in a shell of a predetermined thickness when the growth reaction is substantially complete. When two or more different precursors are provided, the amount of each precursor can be limited, or one precursor can be provided in a limited amount while the other is provided in excess.

[0190]

[0191] The thickness of each shell can be determined using techniques known to those skilled in the art. In some embodiments, the thickness of each shell is determined by comparing the average diameter of the nanostructures before and after adding each shell. In some embodiments, the average diameter of the nanostructures before and after adding each shell is determined by transmission electron microscopy (TEM). In some embodiments, each shell has a thickness between about 0.05 nm and about 3.5 nm, between about 0.05 nm and about 2 nm, between about 0.05 nm and about 0.9 nm, between about 0.05 nm and about 0.7 nm, between about 0.05 nm and about 0.5 nm, between about 0.05 nm and about 0.3 nm, between about 0.05 nm and about 0.1 nm, between about 0.1 nm and about 3.5 nm, between about 0.1 nm and about 2 nm, between about 0.1 nm and about 0.9 nm, between about 0.1 nm and about 0.7 nm, between about 0.1 nm and about 0.5 nm, between about 0.1 nm and about 0.3 nm, or between about 0. The thickness is between 3 nm and about 3.5 nm, between about 0.3 nm and about 2 nm, between about 0.3 nm and about 0.9 nm, between about 0.3 nm and about 0.7 nm, between about 0.3 nm and about 0.5 nm, between about 0.5 nm and about 3.5 nm, between about 0.5 nm and about 2 nm, between about 0.5 nm and about 0.9 nm, between about 0.5 nm and about 0.7 nm, between about 0.7 nm and about 3.5 nm, between about 0.7 nm and about 2 nm, between about 0.7 nm and about 0.9 nm, between about 0.9 nm and about 3.5 nm, between about 0.9 nm and about 2 nm, or between about 2 nm and about 3.5 nm.

[0191]

[0192] In some embodiments, each shell is synthesized in the presence of at least one nanostructure ligand. The ligand can, for example, improve the miscibility of the nanostructures in a solvent or polymer (allowing them to be distributed throughout the composition so they do not clump together), increase the quantum yield of the nanostructures, and / or maintain the luminescence of the nanostructures (e.g., when the nanostructures are incorporated into a matrix). In some embodiments, the ligands used for core synthesis and shell synthesis are the same. In some embodiments, the ligands used for core synthesis and shell synthesis are different. After synthesis, any ligands on the surface of the nanostructures can be exchanged for different ligands with other desired properties. Exemplary ligands are disclosed in U.S. Pat. Nos. 7,572,395, 8,143,703, 8,425,803, 8,563,133, 8,916,064, 9,005,480, 9,139,770, and 9,169,435, and U.S. Patent Application Publication No. 2008 / 0118755.

[0192]

[0193] Ligands suitable for shell synthesis are well known to those skilled in the art. In some embodiments, the ligand is a fatty acid selected from the group consisting of lauric acid, caproic acid, caprylic acid, myristic acid, palmitic acid, stearic acid, and oleic acid. In some embodiments, the ligand is an organophosphine or organophosphine oxide selected from trioctylphosphine oxide (TOPO), trioctylphosphine (TOP), diphenylphosphine (DPP), triphenylphosphine oxide, and tributylphosphine oxide. In some embodiments, the ligand is an amine selected from the group consisting of dodecylamine, oleylamine, hexadecylamine, dioctylamine, and octadecylamine. In some embodiments, the ligand is trioctylphosphine oxide, trioctylphosphine, or lauric acid.

[0193]

[0194] In some embodiments, each shell is prepared in the presence of a mixture of ligands. In some embodiments, each shell is prepared in the presence of a mixture comprising two, three, four, five, or six different ligands. In some embodiments, each shell is prepared in the presence of a mixture comprising three different ligands. In some embodiments, the mixture of ligands comprises tributylphosphine oxide, trioctylphosphine, and lauric acid.

[0194]

[0195] In some embodiments, each shell is prepared in the presence of a solvent, hi some embodiments, the solvent is selected from the group consisting of 1-octadecene, 1-hexadecene, 1-eicosene, eicosane, octadecane, hexadecane, tetradecane, squalene, squalane, trioctylphosphine oxide, and dioctyl ether.

[0195]

[0196] In some embodiments, the core or core / shell and shell precursor are heated to a temperature between about 20°C and about 310°C, between about 20°C and about 280°C, between about 20°C and about 250°C, between about 20°C and about 200°C, between about 20°C and about 150°C, between about 20°C and about 100°C, between about 20°C and about 50°C, between about 50°C and about 310°C, between about 50°C and about 280°C, between about 50°C and about 250°C, between about 50°C and about 200°C, between about 50°C and about 150°C, between about 50°C and about 100°C, between about 100°C and about 310°C. between about 100°C and about 280°C, between about 100°C and about 250°C, between about 100°C and about 200°C, between about 100°C and about 150°C, between about 150°C and about 310°C, between about 150°C and about 280°C, between about 150°C and about 250°C, between about 150°C and about 200°C, between about 200°C and about 310°C, between about 200°C and about 280°C, between about 200°C and about 250°C, between about 250°C and about 310°C, between about 250°C and about 280°C, or between about 280°C and about 310°C.

[0196]

[0197] In some embodiments, after combining the core or core / shell with the shell precursor, the temperature of the reaction mixture is raised to an elevated temperature between about 200°C and about 310°C, between about 200°C and about 280°C, between about 200°C and about 250°C, between about 200°C and about 220°C, between about 220°C and about 310°C, between about 220°C and about 280°C, between about 220°C and about 250°C, between about 250°C and about 310°C, between about 250°C and about 280°C, or between about 280°C and about 310°C.

[0197]

[0198] In some embodiments, the time required for the temperature to reach the above-mentioned high temperature after mixing of the core or core / shell with the shell precursor is between about 2 and about 240 minutes, between about 2 and about 200 minutes, between about 2 and about 100 minutes, between about 2 and about 60 minutes, between about 2 and about 40 minutes, between about 5 and about 240 minutes, between about 5 and about 200 minutes, between about 5 and about 100 minutes, between about 5 and about 60 minutes, between about 5 and about 40 minutes, between about 10 and about 240 minutes, or between about Between 10 to about 200 minutes, between about 10 to about 100 minutes, between about 10 to about 60 minutes, between about 10 to about 40 minutes, between about 40 to about 240 minutes, between about 40 to about 200 minutes, between about 40 to about 100 minutes, between about 40 to about 60 minutes, between about 60 to about 240 minutes, between about 60 to about 200 minutes, between about 60 to about 100 minutes, between about 100 to about 240 minutes, between about 100 to about 200 minutes, or between about 200 to about 240 minutes.

[0198]

[0199] In some embodiments, the temperature of the reaction mixture after combining the core or core / shell with the shell precursor is maintained at an elevated temperature for a period of from 2 to about 240 minutes, from about 2 to about 200 minutes, from about 2 to about 100 minutes, from about 2 to about 60 minutes, from about 2 to about 40 minutes, from about 5 to about 240 minutes, from about 5 to about 200 minutes, from about 5 to about 100 minutes, from about 5 to about 60 minutes, from about 5 to about 40 minutes, from about 10 to about 240 minutes, from about 10 to about The temperature is maintained for 200 minutes, for about 10 to about 100 minutes, for about 10 to about 60 minutes, for about 10 to about 40 minutes, for about 40 to about 240 minutes, for about 40 to about 200 minutes, for about 40 to about 100 minutes, for about 40 to about 60 minutes, for about 60 to about 240 minutes, for about 60 to about 200 minutes, for about 60 to about 100 minutes, for about 100 to about 240 minutes, for about 100 to about 200 minutes, or for about 200 to about 240 minutes.

[0199]

[0200] In some embodiments, additional shells are produced by adding additional shell material precursors and maintaining the reaction mixture at an elevated temperature after adding them. Typically, additional shell precursors are provided after the reaction of a previous shell is substantially complete (e.g., when at least one previous precursor has been consumed or removed from the reaction, or when no further growth is detectable). Further addition of precursors results in the formation of additional shells.

[0200]

[0201] In some embodiments, the nanostructures are cooled before adding additional shell material precursor to obtain an additional shell. In some embodiments, the nanostructures are maintained at an elevated temperature before adding additional shell material precursor to obtain an additional shell.

[0201]

[0202] After sufficient layers of shell have been added to allow the nanostructures to reach the desired thickness and diameter, the nanostructures can be cooled. In some embodiments, the core / shell nanostructures are cooled to room temperature. In some embodiments, an organic solvent is added to dilute the reaction mixture containing the core / shell nanostructures.

[0202]

[0203] In some embodiments, the organic solvent used to dilute the reaction mixture is ethanol, hexane, pentane, toluene, benzene, diethyl ether, acetone, ethyl acetate, dichloromethane (methylene chloride), chloroform, dimethylformamide, or N-methylpyrrolidinone. In some embodiments, the organic solvent is toluene.

[0203]

[0204] In some embodiments, the core / shell nanostructures are isolated. In some embodiments, the core / shell nanostructures are isolated by precipitation with an organic solvent. In some embodiments, the core / shell nanostructures are isolated by coagulation with ethanol.

[0204]

[0205] The number of monolayers determines the size of the core / shell nanostructure. The size of the core / shell nanostructure can be determined using techniques known to those skilled in the art. In some embodiments, the size of the core / shell nanostructure is determined using TEM. In some embodiments, the core / shell nanostructure has a size between about 1 nm and about 15 nm, between about 1 nm and about 10 nm, between about 1 nm and about 9 nm, between about 1 nm and about 8 nm, between about 1 nm and about 7 nm, between about 1 nm and about 6 nm, between about 1 nm and about 5 nm, between about 5 nm and about 15 nm, between about 5 nm and about 10 nm, between about 5 nm and about 9 nm, between about 5 nm and about 8 nm, between about 5 nm and about 7 nm, between about 5 nm and about 6 nm, between about 6 nm and about 15 nm. nm, between about 6 nm and about 10 nm, between about 6 nm and about 9 nm, between about 6 nm and about 8 nm, between about 6 nm and about 7 nm, between about 7 nm and about 15 nm, between about 7 nm and about 10 nm, between about 7 nm and about 9 nm, between about 7 nm and about 8 nm, between about 8 nm and about 15 nm, between about 8 nm and about 10 nm, between about 8 nm and about 9 nm, between about 9 nm and about 15 nm, between about 9 nm and about 10 nm, or between about 10 nm and about 15 nm.

[0205]

[0206] In some embodiments, an acid etching step of the core / shell nanostructure is performed before depositing the additional shell.

[0206] Fabrication of ZnSe shell

[0207] In some embodiments, the shell deposited on the core or core / shell nanostructure is a ZnSe shell.

[0207]

[0208] In some embodiments, the shell precursor that is contacted with the core or core / shell nanostructure to form the ZnSe shell comprises a zinc source and a selenium source.

[0208]

[0209] In some embodiments, the zinc source is a dialkyl zinc compound. In some embodiments, the zinc source is a zinc carboxylate. In some embodiments, the zinc source is diethyl zinc, dimethyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oleate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, or a mixture thereof. In some embodiments, the zinc source is zinc oleate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, or a mixture thereof. In some embodiments, the zinc source is zinc oleate.

[0209]

[0210] In some embodiments, the selenium source is an alkyl-substituted selenourea. In some embodiments, the selenium source is a phosphine selenide. In some embodiments, the selenium source is selected from trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, tricyclohexylphosphine selenide, cyclohexylphosphine selenide, 1-octaneselenol, 1-dodecaneselenol, selenophenol, elemental selenium, hydrogen selenide, bis(trimethylsilyl)selenide, selenourea, and mixtures thereof. In some embodiments, the selenium source is tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, or tri(tert-butyl)phosphine selenide. In some embodiments, the selenium source is trioctylphosphine selenide.

[0210]

[0211] In some embodiments, the molar ratio of the core to the zinc source for preparing the ZnSe shell is between about 1:2 and about 1:1000, between about 1:2 and about 1:100, between about 1:2 and about 1:50, between about 1:2 and about 1:25, between about 1:2 and about 1:15, between about 1:2 and about 1:10, between about 1:2 and about 1:5, between about 1:5 and about 1:1000, between about 1:5 and about 1:100, between about 1:5 and about 1:50, between about 1:5 and about 1:25, between about 1:5 and about 1:15, between about 1:5 and about 1:10, between about 1:10 and about between 1:1000, between about 1:10 and about 1:100, between about 1:10 and about 1:50, between about 1:10 and about 1:25, between about 1:10 and about 1:15, between about 1:15 and about 1:1000, between about 1:15 and about 1:100, between about 1:15 and about 1:50, between about 1:15 and about 1:25, between about 1:25 and about 1:1000, between about 1:25 and about 1:100, between about 1:25 and about 1:50, between about 1:50 and about 1:100, or between about 1:100 and about 1:1000.

[0211]

[0212] In some embodiments, the molar ratio of the core to the selenium source for preparing the ZnSe shell is between about 1:2 and about 1:1000, between about 1:2 and about 1:100, between about 1:2 and about 1:50, between about 1:2 and about 1:25, between about 1:2 and about 1:15, between about 1:2 and about 1:10, between about 1:2 and about 1:5, between about 1:5 and about 1:1000, between about 1:5 and about 1:100, between about 1:5 and about 1:50, between about 1:5 and about 1:25, between about 1:5 and about 1:15, between about 1:5 and about 1:10, between about 1:10 and about 1:10 between about 1:1000, between about 1:10 and about 1:100, between about 1:10 and about 1:50, between about 1:10 and about 1:25, between about 1:10 and about 1:15, between about 1:15 and about 1:1000, between about 1:15 and about 1:100, between about 1:15 and about 1:50, between about 1:15 and about 1:25, between about 1:25 and about 1:1000, between about 1:25 and about 1:100, between about 1:25 and about 1:50, between about 1:50 and about 1:100, or between about 1:100 and about 1:1000.

[0212]

[0213] In some embodiments, the number of monolayers in the ZnSe shell is between about 0.25 and about 10, between about 0.25 and about 8, between about 0.25 and about 7, between about 0.25 and about 6, between about 0.25 and about 5, between about 0.25 and about 4, between about 0.25 and about 3, between about 0.25 and about 2, between about 2 and about 10, between about 2 and about 8, between about 2 and about 7, between about 2 and about 6, between about 2 and about 5, between about 2 and about 4, between about 2 and about 3, or between about 3 and about 4. Between about 10, between about 3 and about 8, between about 3 and about 7, between about 3 and about 6, between about 3 and about 5, between about 3 and about 4, between about 4 and about 10, between about 4 and about 8, between about 4 and about 7, between about 4 and about 6, between about 4 and about 5, between about 5 and about 10, between about 5 and about 8, between about 5 and about 7, between about 5 and about 6, between about 6 and about 10, between about 6 and about 8, between about 6 and about 7, between about 7 and about 10, between about 7 and about 8, or between about 8 and about 10. In some embodiments, the ZnSe shell comprises between 2 and 8 monolayers. In some embodiments, the ZnSe shell comprises between 4 and 6 monolayers.

[0213]

[0214] In some embodiments, the ZnSe monolayer has a thickness of about 0.328 nm.

[0214]

[0215] In some embodiments, the ZnSe shell is between about 0.08 nm and about 3.5 nm, between about 0.08 nm and about 2 nm, between about 0.08 nm and about 0.9 nm, between about 0.08 nm and about 0.7 nm, between about 0.08 nm and about 0.5 nm, between about 0.08 nm and about 0.2 nm, between about 0.2 nm and about 3.5 nm, between about 0.2 nm and about 2 nm, between about 0.2 nm and about 0.9 nm, between about 0.2 nm and about 0.7 nm between about 0.2 nm and about 0.5 nm, between about 0.5 nm and about 3.5 nm, between about 0.5 nm and about 2 nm, between about 0.5 nm and about 0.9 nm, between about 0.5 nm and about 0.7 nm, between about 0.7 nm and about 3.5 nm, between about 0.7 nm and about 2 nm, between about 0.7 nm and about 0.9 nm, between about 0.9 nm and about 3.5 nm, between about 0.9 nm and about 2 nm, or between about 2 nm and about 3.5 nm.

[0215] Fabrication of ZnS shell

[0216] In some embodiments, the shell deposited on the core or core / shell nanostructure is a ZnS shell.

[0216]

[0217] In some embodiments, the shell precursor that is contacted with the core or core / shell nanostructure to prepare the ZnS shell comprises a zinc source and a sulfur source.

[0217]

[0218] In some embodiments, the ZnS shell passivates defects on the particle surface, thereby improving quantum yield and increasing efficiency when used in devices such as LEDs and lasers. Furthermore, spectral impurities caused by defect states can be eliminated by passivation, thereby increasing color saturation.

[0218]

[0219] In some embodiments, the zinc source is a dialkyl zinc compound. In some embodiments, the zinc source is a zinc carboxylate. In some embodiments, the zinc source is diethyl zinc, dimethyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oleate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, or a mixture thereof. In some embodiments, the zinc source is zinc oleate, zinc hexanoate, zinc octanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, zinc dithiocarbamate, or a mixture thereof. In some embodiments, the zinc source is zinc oleate.

[0219]

[0220] In some embodiments, the sulfur source is selected from elemental sulfur, octanethiol, dodecanethiol, octadecanethiol, tributylphosphine sulfide, cyclohexyl isothiocyanate, α-toluenethiol, ethylene trithiocarbonate, allyl mercaptan, bis(trimethylsilyl) sulfide, trioctylphosphine sulfide, and mixtures thereof. In some embodiments, the sulfur source is an alkyl-substituted zinc dithiocarbamate. In some embodiments, the sulfur source is octanethiol. In some embodiments, the sulfur source is tributylphosphine sulfide.

[0220]

[0221] In some embodiments, the molar ratio of the core to the zinc source for preparing the ZnS shell is between about 1:2 and about 1:1000, between about 1:2 and about 1:100, between about 1:2 and about 1:50, between about 1:2 and about 1:25, between about 1:2 and about 1:15, between about 1:2 and about 1:10, between about 1:2 and about 1:5, between about 1:5 and about 1:1000, between about 1:5 and about 1:100, between about 1:5 and about 1:50, between about 1:5 and about 1:25, between about 1:5 and about 1:15, between about 1:5 and about 1:10, between about 1:10 and about between 1:1000, between about 1:10 and about 1:100, between about 1:10 and about 1:50, between about 1:10 and about 1:25, between about 1:10 and about 1:15, between about 1:15 and about 1:1000, between about 1:15 and about 1:100, between about 1:15 and about 1:50, between about 1:15 and about 1:25, between about 1:25 and about 1:1000, between about 1:25 and about 1:100, between about 1:25 and about 1:50, between about 1:50 and about 1:100, or between about 1:100 and about 1:1000.

[0221]

[0222] In some embodiments, the molar ratio of the core to the sulfur source for preparing the ZnS shell is between about 1:2 and about 1:1000, between about 1:2 and about 1:100, between about 1:2 and about 1:50, between about 1:2 and about 1:25, between about 1:2 and about 1:15, between about 1:2 and about 1:10, between about 1:2 and about 1:5, between about 1:5 and about 1:1000, between about 1:5 and about 1:100, between about 1:5 and about 1:50, between about 1:5 and about 1:25, between about 1:5 and about 1:15, between about 1:5 and about 1:10, between about 1:10 and about between 1:1000, between about 1:10 and about 1:100, between about 1:10 and about 1:50, between about 1:10 and about 1:25, between about 1:10 and about 1:15, between about 1:15 and about 1:1000, between about 1:15 and about 1:100, between about 1:15 and about 1:50, between about 1:15 and about 1:25, between about 1:25 and about 1:1000, between about 1:25 and about 1:100, between about 1:25 and about 1:50, between about 1:50 and about 1:100, or between about 1:100 and about 1:1000.

[0222]

[0223] In some embodiments, the number of monolayers in the ZnS shell is between about 0.25 and about 10, between about 0.25 and about 8, between about 0.25 and about 7, between about 0.25 and about 6, between about 0.25 and about 5, between about 0.25 and about 4, between about 0.25 and about 3, between about 0.25 and about 2, between about 2 and about 10, between about 2 and about 8, between about 2 and about 7, between about 2 and about 6, between about 2 and about 5, between about 2 and about 4, between about 2 and about 3, or between about 3 and about Between about 3 and about 8, between about 3 and about 7, between about 3 and about 6, between about 3 and about 5, between about 3 and about 4, between about 4 and about 10, between about 4 and about 8, between about 4 and about 7, between about 4 and about 6, between about 4 and about 5, between about 5 and about 10, between about 5 and about 8, between about 5 and about 7, between about 5 and about 6, between about 6 and about 10, between about 6 and about 8, between about 6 and about 7, between about 7 and about 10, between about 7 and about 8, or between about 8 and about 10. In some embodiments, the ZnS shell comprises between 2 and 8 monolayers. In some embodiments, the ZnS shell comprises between 4 and 6 monolayers.

[0223]

[0224] In some embodiments, the ZnS monolayer has a thickness of about 0.31 nm.

[0224]

[0225] In some embodiments, the ZnS shell has a thickness between about 0.08 nm and about 3.5 nm, between about 0.08 nm and about 2 nm, between about 0.08 nm and about 0.9 nm, between about 0.08 nm and about 0.7 nm, between about 0.08 nm and about 0.5 nm, between about 0.08 nm and about 0.2 nm, between about 0.2 nm and about 3.5 nm, between about 0.2 nm and about 2 nm, between about 0.2 nm and about 0.9 nm, or between about 0.2 nm and about 0.7 nm. between about 0.2 nm and about 0.5 nm, between about 0.5 nm and about 3.5 nm, between about 0.5 nm and about 2 nm, between about 0.5 nm and about 0.9 nm, between about 0.5 nm and about 0.7 nm, between about 0.7 nm and about 3.5 nm, between about 0.7 nm and about 2 nm, between about 0.7 nm and about 0.9 nm, between about 0.9 nm and about 3.5 nm, between about 0.9 nm and about 2 nm, or between about 2 nm and about 3.5 nm.

[0225] Core / shell nanostructures

[0226] In some embodiments, the core / shell nanostructures are ZnSe 1-x Te x In some embodiments, the core / shell nanostructure is a ZnSe / ZnS core / shell nanostructure. 1-x Te x / ZnSe / ZnS core / shell quantum dots.

[0226]

[0227] In some embodiments, the core / shell nanostructures exhibit high photoluminescence quantum yields, such as between about 30% and about 99%, between about 30% and about 95%, between about 30% and about 90%, between about 30% and about 85%, between about 30% and about 80%, between about 30% and about 60%, between about 30% and about 50%, between about 30% and about 40%, between about 40% and about 99%, between about 40% and about 95%, between about 40% and about 90%, between about 40% and about 85%, between about 40% and about 80%, and about 40%. The core / shell nanostructures exhibit a photoluminescence quantum yield of between about 50% and about 60%, between about 40% and about 50%, between about 50% and about 99%, between about 50% and about 95%, between about 50% and about 90%, between about 50% and about 85%, between about 60% and about 99%, between about 60% and about 95%, between about 60% and about 85%, between about 80% and about 99%, between about 80% and about 90%, between about 80% and about 85%, between about 85% and about 99%, or between about 85% and about 95%. In some embodiments, the core / shell nanostructures exhibit a photoluminescence quantum yield of between about 50% and about 60%. In some embodiments, the core / shell nanostructures exhibit a photoluminescence quantum yield of between about 75% and about 90%.

[0227]

[0228] In some embodiments, the photoluminescence spectrum of the core / shell nanostructure has an emission maximum between about 300 nm and about 590 nm, between about 300 nm and about 550 nm, between about 300 nm and about 450 nm, between about 450 nm and about 590 nm, between about 450 nm and about 550 nm, or between about 550 nm and about 590 nm. In some embodiments, the photoluminescence spectrum of the core / shell nanostructure has an emission maximum between about 420 nm and about 480 nm. In some embodiments, the photoluminescence spectrum of the core / shell nanostructure has an emission maximum between about 440 nm and about 460 nm. In some embodiments, the photoluminescence spectrum of the core / shell nanostructure has an emission maximum between about 450 nm and about 460 nm.

[0228]

[0229] The size distribution of the core / shell nanostructures can be relatively narrow. In some embodiments, the photoluminescence spectrum of a population or core / shell nanostructures can have a full width at half maximum (FWHM) between about 10 nm and about 30 nm, between about 10 nm and about 25 nm, between about 10 nm and about 20 nm, between about 10 nm and about 22 nm, between about 10 nm and about 15 nm, between about 15 nm and about 30 nm, between about 15 nm and about 25 nm, between about 15 nm and about 22 nm, between about 15 nm and about 20 nm, between about 20 nm and about 30 nm, between about 20 nm and about 25 nm, between about 20 nm and about 22 nm, between about 22 nm and about 30 nm, between about 22 nm and about 25 nm, or between about 25 nm and about 30 nm. In some embodiments, the photoluminescence spectrum of a population of core / shell nanostructures can have a FWHM between about 15 nm and about 22 nm. In some embodiments, the photoluminescence spectrum of a population of core / shell nanostructures can have a FWHM between about 20 nm and about 30 nm.

[0229] Nanostructured film

[0230] In some embodiments, the core / shell nanostructures prepared by the methods described herein are incorporated into a nanostructured film. In some embodiments, the nanostructured film is incorporated into a quantum dot enhancement film (QDEF).

[0230]

[0231] In some embodiments, the present disclosure is a nanostructured film comprising at least one population of nanostructures, wherein the nanostructures comprise a core surrounded by at least one shell, the core comprising ZnSe 1-x Te x (where 0 < x < 1), at least one shell comprising ZnS or ZnSe, and the nanostructures having a full width at half maximum (FWHM) of about 20 nm to about 30 nm.

[0231]

[0232] In some embodiments, the nanostructures are quantum dots.

[0232]

[0233] In some embodiments, the present disclosure: (a) At least one population of nanostructures, wherein the nanostructures comprise a core surrounded by at least one shell, the core being ZnSe 1-x Te x (where 0 < x < 1), at least one shell comprising ZnS or ZnSe, and the full width at half maximum (FWHM) of the nanostructures being from about 20 nm to about 30 nm; (b) at least one organic resin, to provide a nanostructured film.

[0233]

[0234] In some embodiments, the nanostructures are quantum dots.

[0234]

[0235] In some embodiments, the core / shell nanostructures are embedded in a matrix. As used herein, the term "embedded" is used to indicate that the nanostructures are encapsulated or enveloped within a matrix material that constitutes a majority of the components of the matrix. In some embodiments, the nanostructures are uniformly distributed throughout the matrix material. In some embodiments, the nanostructures are distributed according to a uniform distribution function specific to the application.

[0235]

[0236] In some embodiments, the nanostructures can include a homogeneous population having a size that emits in the blue visible wavelength spectrum, the green visible wavelength spectrum, or the red visible wavelength spectrum. In some embodiments, the nanostructures can include a first population of nanostructures having a size that emits in the blue visible wavelength spectrum, a second population of nanostructures having a size that emits in the green visible wavelength spectrum, and a third population of nanostructures having a size that emits in the red visible wavelength spectrum.

[0236]

[0237] The matrix material may be any suitable host matrix material capable of accommodating the nanostructures. Suitable matrix materials may be chemically and optically compatible with the nanostructures and any surrounding packaging materials or layers used to attach the nanostructure film to the device. Suitable matrix materials may include non-yellowing optical materials that are transparent to both the primary and secondary light, thereby allowing both the primary and secondary light to transmit through the matrix material. Matrix materials may include polymers and organic and inorganic oxides. Suitable polymers for use in the matrix material may be any polymer known to those skilled in the art that can be used for such purposes. These polymers may be substantially translucent or substantially transparent. Matrix materials may include, but are not limited to, epoxies, acrylates, norbornenes, polyethylene, poly(vinyl butyral), poly(vinyl acetate), polyureas, polyurethanes; silicones and silicone derivatives, such as, but not limited to, aminosilicones (AMS), polyphenylmethylsiloxanes, polyphenylalkylsiloxanes, polydiphenylsiloxanes, polydialkylsiloxanes, silsesquioxanes, fluorinated silicones, and vinyl- and hydride-substituted silicones; acrylic polymers and copolymers derived from monomers such as, but not limited to, methyl methacrylate, butyl methacrylate, and lauryl methacrylate; styrenic polymers, such as polystyrene, aminopolystyrene (APS), and poly(acrylonitrile ethylene styrene) (AES); polymers that crosslink with difunctional monomers such as divinylbenzene; crosslinkers suitable for crosslinking ligand materials, such as epoxides that combine with ligand amines (e.g., APS or polyethyleneimine ligand amines) to form epoxies.

[0237]

[0238] In some embodiments, the matrix material includes scattering microbeads, such as TiO microbeads, ZnS microbeads, or glass microbeads, which can improve the light conversion efficiency of the nanostructured film. In some embodiments, the matrix material can include light blocking elements.

[0238]

[0239] In some embodiments, the matrix material can have low oxygen and moisture permeability, can exhibit high photostability and chemical stability, can exhibit advantageous refractive index, and can adhere to the exterior surfaces of the nanostructures, thereby forming a hermetic seal to protect the nanostructures. In another embodiment, the matrix material can be curable using UV or thermal curing methods to facilitate roll-to-roll processing.

[0239]

[0240] In some embodiments, nanostructured films can be formed by mixing nanostructures in a polymer (e.g., photoresist) and casting the nanostructure-polymer mixture onto a substrate, by mixing nanostructures with monomers and polymerizing them together, by mixing nanostructures in a sol-gel to form an oxide, or by any other method known to one skilled in the art.

[0240]

[0241] In some embodiments, forming the nanostructured film can include a film extrusion process. The film extrusion process can include forming a homogeneous mixture of a matrix material and core-shell nanostructures coated with a barrier layer, such as nanostructures functionalized with metal halides and / or metal carboxylates, and introducing the homogeneous mixture into a top-mounted hopper to feed the homogeneous mixture into an extruder. In some embodiments, the homogeneous mixture can be in the form of pellets. The film extrusion process can further include extruding the nanostructured film through a slot die and passing the extruded nanostructured film through a chill roll. In some embodiments, the extruded nanostructured film can have a thickness of less than about 75 μm, for example, in the range of about 70 μm to about 40 μm, about 65 μm to about 40 μm, about 60 μm to about 40 μm, or about 50 μm to about 40 μm. In some embodiments, the nanostructured film has a thickness of less than about 10 μm. In some embodiments, forming the nanostructured film can optionally include a secondary process prior to the film extrusion process. Secondary processes can include processes such as coextrusion, thermoforming, vacuum forming, plasma treating, molding, and / or embossing to create a texture on the top surface of the nanostructured film layer. The textured top surface of the nanostructured film can help, for example, improve the defined light diffusion and / or defined angular optical emission properties of the nanostructured film.

[0241] Quantum dot-on-glass LCD display

[0242] In some embodiments, the nanostructured film is incorporated into a quantum dot-on-glass LCD display. The LCD display can include a nanostructured film formed directly on a light guide plate (LGP) without the need for an intermediate substrate or barrier layer. In some embodiments, the nanostructured film can be a thin film. In some embodiments, the nanostructured film can have a thickness of 500 μm or less, 100 μm or less, or 50 μm or less. In some embodiments, the nanostructured film is a thin film having a thickness of about 15 μm or less.

[0242]

[0243] The LGP can include an optical cavity having one or more surfaces, including at least a top surface, that comprises glass. Glass provides excellent resistance to impurities, including moisture and air. Additionally, glass can be formed as a thin substrate while maintaining structural rigidity. Thus, the LGP can be formed at least in part from glass to provide a substrate with sufficient barrier and structural properties.

[0243]

[0244] In some embodiments, a nanostructured film can be formed on an LGP. In some embodiments, the nanostructured film comprises a population of nanostructures embedded in a matrix material, such as a resin. The nanostructured film can be formed on an LGP by any method known in the art, such as wet coating, painting, spin coating, or screen printing. After deposition, the resin of the nanostructured film can be cured. In some embodiments, one or more nanostructured film resins can be partially cured, further processed, and then finally cured. The nanostructured film can be deposited as a single layer or as separate layers, and the separate layers can include various properties. The width and height of the nanostructured film can be any desired dimension depending on the size of the display panel of the display device. For example, the nanostructured film can have a relatively small surface area for small display embodiments such as watches and phones, or the nanostructured film can have a large surface area for large display embodiments such as TVs and computer monitors.

[0244]

[0245] In some embodiments, an optically transparent substrate is formed on the nanostructured film by any method known in the art, such as vacuum deposition, vapor deposition, or the like. The optically transparent substrate can be configured to environmentally seal the nanostructured film from underlying layers and / or structures. In some embodiments, a light-blocking element can be included in the optically transparent substrate. In some embodiments, a light-blocking element can be included in a second polarizing filter, which can be disposed between the substrate and the nanostructured film. In some embodiments, the light-blocking element can be, for example, a dichroic filter that can reflect primary light (e.g., blue light, UV light, or a combination of UV and blue light) while transmitting secondary light. The light-blocking element can include a specialized UV light filtering element to filter out unconverted UV light from the red and green subpixels and / or UV light from the blue subpixels.

[0245] On-chip and near-chip placement of quantum dots

[0246] In some embodiments, the nanostructures are incorporated into the display device by "on-chip" placement. As used herein, "on-chip" refers to placing the nanostructures in the LED cup. In some embodiments, the nanostructures are dissolved in a resin or fluid that fills the LED cup.

[0246]

[0247] In some embodiments, the nanostructures are incorporated into the display device in a "near-chip" configuration. As used herein, "near-chip" refers to coating the nanostructures on top of the LED assembly so that the emitted light passes through the nanostructure film.

[0247] Display device with nanostructured color conversion layer

[0248] In some embodiments, the present invention provides a method for producing a pharmaceutical composition comprising: (a) a display panel for emitting a first light; (b) a backlight unit configured to provide a first light to the display panel; (c) a color filter including at least one pixel region including a color conversion layer; A display device including:

[0248]

[0249] In some embodiments, the color filter includes at least 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 pixel regions. In some embodiments, when blue light is incident on the color filter, it can pass through the pixel regions to emit red light, white light, green light, and / or blue light, respectively. In some embodiments, the color filter is described in U.S. Patent Application Publication No. 2017 / 153366, which is incorporated herein by reference in its entirety.

[0249]

[0250] In some embodiments, each pixel region includes a color conversion layer. In some embodiments, the color conversion layer includes nanostructures described herein configured to convert incident light to light of a first color. In some embodiments, the color conversion layer includes nanostructures described herein configured to convert incident light to blue light.

[0250]

[0251] In some embodiments, the display device includes 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 color conversion layers. In some embodiments, the display device includes one color conversion layer comprising the nanostructures described herein. In some embodiments, the display device includes two color conversion layers comprising the nanostructures described herein. In some embodiments, the display device includes three color conversion layers comprising the nanostructures described herein. In some embodiments, the display device includes four color conversion layers comprising the nanostructures described herein. In some embodiments, the display device includes at least one red conversion layer, at least one green conversion layer, and at least one blue conversion layer.

[0251]

[0252] In some embodiments, the color conversion layer has a thickness of about 3 μm to about 10 μm, about 3 μm to about 8 μm, about 3 μm to about 6 μm, about 6 μm to about 10 μm, about 6 μm to about 8 μm, or about 8 μm to about 10 μm. In some embodiments, the color conversion layer has a thickness of about 3 μm to about 10 μm.

[0252]

[0253] The nanostructured color conversion layer can be deposited by any suitable method known in the art, including, but not limited to, painting, spray coating, solvent spraying, wet coating, adhesive coating, spin coating, tape coating, roll coating, flow coating, inkjet printing, photoresist patterning, drop casting, blade coating, mist deposition, or a combination thereof. In some embodiments, the nanostructured color conversion layer is deposited by photoresist patterning. In some embodiments, the nanostructured color conversion layer is deposited by inkjet printing.

[0253] Inkjet printing

[0254] The formation of thin films using dispersions of nanostructures in organic solvents is often achieved by coating techniques such as spin coating. However, these coating techniques are generally not suitable for forming thin films over large areas and do not provide a means for patterning the deposited layers, thus limiting their use. Inkjet printing allows for precisely patterned deposition of thin films on a large scale at low cost. Inkjet printing also allows for precise patterning of nanostructured layers, allowing for the printing of display pixels, eliminating the need for photopatterning. Therefore, inkjet printing is very attractive for industrial applications, especially for displays.

[0254]

[0255] Commonly used solvents for inkjet printing are dipropylene glycol monomethyl ether acetate (DPMA), polyglycidyl methacrylate (PGMA), diethylene glycol monoethyl ether acetate (EDGAC), and propylene glycol methyl ether acetate (PGMEA). Volatile solvents are also frequently used for inkjet printing because they dry quickly. Volatile solvents include ethanol, methanol, 1-propanol, 2-propanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethyl acetate, and tetrahydrofuran. Conventional nanostructures generally cannot dissolve in these solvents. However, the highly hydrophilic nature of the nanostructures described herein makes them highly soluble in these solvents.

[0255]

[0256] In some embodiments, the nanostructures described herein used for inkjet printing are dispersed in a solvent selected from DPMA, PGMA, EDGAC, PGMEA, ethanol, methanol, 1-propanol, 2-propanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethyl acetate, tetrahydrofuran, chloroform, chlorobenzene, cyclohexane, hexane, heptane, octane, hexadecane, undecane, decane, dodecane, xylene, toluene, benzene, octadecane, tetradecane, butyl ether, or a combination thereof. In some embodiments, the nanostructures described herein including poly(alkylene oxide) ligands used for inkjet printing are dispersed in a solvent selected from DPMA, PGMA, EDGAC, PGMEA, ethanol, methanol, 1-propanol, 2-propanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethyl acetate, tetrahydrofuran, or a combination thereof.

[0256]

[0257] For application by inkjet printing or microdispensing, the inkjet composition containing the nanostructures should be dissolved in a suitable solvent, which must be capable of dispersing the nanostructure composition and must not have any adverse effects on the selected printhead.

[0257]

[0258] In some embodiments, the inkjet composition further comprises one or more additional ingredients such as surfactants, lubricants, wetting agents, dispersants, hydrophobizing agents, adhesives, flow improvers, defoamers, deaerators, diluents, adjuvants, colorants, dyes, pigments, sensitizers, stabilizers, and suppressors.

[0258]

[0259] In some embodiments, the nanostructure composition described herein comprises between about 0.01% and about 20% by weight of the ink jet composition. In some embodiments, the nanostructures described herein are present in an amount, by weight of the ink jet composition, between about 0.01% and about 20%, between about 0.01% and about 15%, between about 0.01% and about 10%, between about 0.01% and about 5%, between about 0.01% and about 2%, between about 0.01% and about 1%, between about 0.01% and about 0.1%, between about 0.01% and about 0.05%, between about 0.05% and about 20%, between about 0.05% and about 15%, between about 0.05% and about 10%, between about 0.05% and about 5%, between about 0.05% and about 2%, between about 0.05% and about 1%, between about 0.05% and about 0.1%, between about 0.1% and about 20%, between about 0.1% and about 15%, between about 0.1% and about 1 Between 0%, between about 0.1% and about 5%, between about 0.1% and about 2%, between about 0.1% and about 1%, between about 0.5% and about 20%, between about 0.5% and about 15%, between about 0.5% and about 10%, between about 0.5% and about 5%, between about 0.5% and about 2%, between about 0.5% and about 1%, between about 1% and about 20%, between about 1% and about 15%, between about 1% and about 10%, between about 1% and about 5%, between about 1% and about 2%, between about 2% and about 20%, between about 2% and about 15%, between about 2% and about 10%, between about 2% and about 5%, between about 5% and about 20%, between about 5% and about 15%, between about 5% and about 10%, between about 10% and about 20%, between about 10% and about 15%, or between about 15% and 20%.

[0259]

[0260] In some embodiments, inkjet compositions comprising the nanostructures or nanostructure compositions described herein are used to form electronic devices. In some embodiments, inkjet compositions comprising the nanostructures or nanostructure compositions described herein are used to form electronic devices selected from the group consisting of nanostructured films, displays, lighting devices, backlight units, color filters, surface emitting devices, electrodes, magnetic storage devices, and batteries. In some embodiments, inkjet compositions comprising the nanostructure compositions described herein are used to form light emitting devices.

[0260] Nanostructured Molded Articles

[0261] In some embodiments, the nanostructure composition is used to form a nanostructured molded article. In some embodiments, the nanostructured molded article is a liquid crystal display (LCD) or a light emitting diode (LED). In some embodiments, the nanostructure composition is used to form a light emitting layer of a lighting device. The lighting device can be used in a wide variety of applications, such as flexible electronics, touch screens, monitors, televisions, mobile phones, and any high resolution display. In some embodiments, the lighting device is a light emitting diode or a liquid crystal display. In some embodiments, the lighting device is a quantum dot light emitting diode (QLED). An example of a QLED is disclosed in U.S. Patent Application No. 15 / 824,701, the entire contents of which are incorporated herein by reference.

[0261]

[0262] In some embodiments, the present disclosure provides: (a) a first conductive layer; (b) a second conductive layer; (c) a light-emitting diode comprising: a light-emitting layer between a first conductive layer and a second conductive layer; the light-emitting layer comprising at least one population of nanostructures; the nanostructures comprising a core surrounded by at least one shell; the core comprising ZnSe; 1-x Te xProvided is a light-emitting diode that includes (0 < x < 1), at least one shell includes ZnS or ZnSe, and the full width at half maximum (FWHM) of the nanostructure is from about 20 nm to about 30 nm.

[0262]

[0263] In some embodiments, the light-emitting layer is a nanostructured film.

[0263]

[0264] In some embodiments, the light-emitting diode includes a first conductive layer, a second conductive layer, and a light-emitting layer, and the light-emitting layer is disposed between the first conductive layer and the second conductive layer. In some embodiments, the light-emitting layer is a thin film.

[0264]

[0265] In some embodiments, the light-emitting diode includes additional layers such as a hole injection layer, a hole transport layer, and an electron transport layer between the first conductive layer and the second conductive layer. In some embodiments, the hole injection layer, the hole transport layer, and the electron transport layer are thin films. In some embodiments, these layers are stacked on a substrate.

[0265]

[0266] When a voltage is applied to the first conductive layer and the second conductive layer, holes injected in the first conductive layer move to the light-emitting layer through the hole injection layer and / or the hole transport layer, and electrons injected from the second conductive layer move to the light-emitting layer through the electron transport layer. The holes and electrons recombine in the light-emitting layer to generate excitons.

[0266] Manufacture of the nanostructured layer

[0267] In some embodiments, the nanostructured layer may be embedded in a polymer matrix. As used herein, the term "embedded" is used to indicate that the polymer that makes up most of the components of the matrix surrounds or encapsulates the nanostructure population. In some embodiments, at least one nanostructure population is suitably distributed uniformly throughout the matrix. In some embodiments, at least one nanostructure population is distributed according to a distribution specific to the application. In some embodiments, the nanostructures are mixed in a polymer and coated on the surface of the substrate.

[0267]

[0268] In some embodiments, the nanostructure composition is deposited to form a nanostructure layer. In some embodiments, the nanostructure composition can be deposited by any suitable method known in the art, including, but not limited to, painting, spray coating, solvent spraying, wet coating, adhesive coating, spin coating, tape coating, roll coating, flow coating, inkjet vapor jetting, drop casting, blade coating, mist deposition, or a combination thereof. The nanostructure composition can be coated directly onto a desired layer of a substrate. Alternatively, the nanostructure composition can be formed into a solid layer as a separate element and subsequently attached to a substrate. In some embodiments, the nanostructure composition can be deposited onto one or more barrier layers.

[0268]

[0269] In some embodiments, the nanostructured layer is cured after deposition. Suitable curing methods include photocuring, such as UV curing, and thermal curing. Conventional film-by-film processing methods, tape coating methods, and / or roll-to-roll manufacturing methods can be used to form the nanostructured layer.

[0269] Spin coating

[0270] In some embodiments, nanostructure compositions are deposited onto a substrate using spin coating. In spin coating, a small amount of material is typically placed on the center of a substrate, which is mounted on a machine called a spinner and held in place by vacuum. The spinner rotates the substrate at high speed, creating a centripetal force that spreads the material from the center to the edges of the substrate. While most of the material is shaken off, some remains on the substrate, and as the spinning continues, a thin film of material forms on the surface. The final thickness of the film is determined by the properties of the material being deposited and the substrate, as well as the parameters selected for the spin process, such as spin speed, acceleration, and spin time. In some embodiments, spin speeds of 1500 rpm to 6000 rpm are used, with spin times of 10 to 60 seconds.

[0270] Mist accumulation

[0271] In some embodiments, nanostructure compositions are deposited onto substrates using mist deposition. Mist deposition is performed at room temperature and atmospheric pressure, and film thickness can be precisely controlled by varying process conditions. During mist deposition, nitrogen gas converts liquid source material into a fine mist and transports it to the deposition chamber. The mist is then attracted to the wafer surface by a high voltage potential between the field screen and the wafer holder. The droplets coalesce on the wafer surface, and the wafer is then removed from the chamber and thermally cured to evaporate the solvent. The liquid precursor is a mixture of solvent and material to be deposited. It is transported to the atomizer by pressurized nitrogen gas. Price, SC, et al., “Formation of Ultra-Thin Quantum Dot Films by Mist Deposition,” ESC Transactions 11:89-94 (2007).

[0271] spray coating

[0272] In some embodiments, the nanostructure composition is deposited onto the substrate using spray coating. A typical apparatus for spray coating includes a spray nozzle, a sprayer, a precursor solution, and a carrier gas. In the spray deposition process, the precursor solution is atomized into micro-sized droplets by a carrier gas or by atomization (e.g., ultrasonic, air blast, or electrostatic). The droplets leaving the sprayer are accelerated from the nozzle to near the substrate surface using a carrier gas that is controlled and regulated as desired. The relative motion between the spray nozzle and the substrate is dictated by the design to completely cover the substrate.

[0272]

[0273] In some embodiments, the application of the nanostructure composition further comprises a solvent. In some embodiments, the solvent for applying the nanostructure composition is water, an organic solvent, an inorganic solvent, a halogenated organic solvent, or a mixture thereof. Illustrative solvents include, but are not limited to, water, DO, acetone, ethanol, dioxane, ethyl acetate, methyl ethyl ketone, isopropanol, anisole, γ-butyrolactone, dimethylformamide, N-methylpyrrolidinone, dimethylacetamide, hexamethylphosphoramide, toluene, dimethylsulfoxide, cyclopentanone, tetramethylene sulfoxide, xylene, ε-caprolactone, tetrahydrofuran, tetrachloroethylene, chloroform, chlorobenzene, dichloromethane, 1,2-dichloroethane, 1,1,2,2-tetrachloroethane, or a mixture thereof.

[0273]

[0274] In some embodiments, the nanostructure composition is thermally cured to form the nanostructured layer. In some embodiments, the composition is cured using UV light. In some embodiments, the nanostructure composition is coated directly onto the barrier layer of the nanostructured film, and then an additional barrier layer is deposited on the nanostructured layer to form the nanostructured film. A support substrate can be used below the barrier film to provide strength, stability, and coating uniformity, as well as to prevent material inconsistencies, bubble formation, and wrinkling or folding of the barrier layer material or other materials. Additionally, one or more barrier layers are preferably deposited on the nanostructured layer to seal the material between the top and bottom barrier layers. Suitably, the barrier layers can be stacked as a laminate film, optionally sealed or further processed, and the nanostructured film can then be incorporated into a specific light-emitting device. The nanostructure composition deposition process can include additional or different components, as will be understood by those skilled in the art. Such embodiments allow for in-line process tuning of the nanostructures' emission characteristics, such as brightness and color (e.g., to adjust the white point of a quantum dot film), nanostructure film thickness, and other properties. Furthermore, these embodiments allow for periodic testing of the nanostructured film's properties during production, and any necessary changes can be made to achieve precise nanostructured film properties. Because a computer program can be used to electronically vary the amounts of each compound used to form the nanostructured film, such testing and adjustments can also be made without changing the mechanical configuration of the processing line.

[0274] Barrier layer

[0275] In some embodiments, the molded article includes one or more barrier layers disposed on either one or both sides of the nanostructured layer. Suitable barrier layers protect the nanostructured layer and molded article from ambient conditions such as high temperatures, oxygen, and moisture. Suitable barrier materials include non-yellowing, transparent optical materials that are hydrophobic, chemically and mechanically compatible with the molded article, exhibit photostability and chemical stability, and can withstand high temperatures. In some embodiments, the one or more barrier layers are index-matched to the molded article. In some embodiments, the matrix material of the molded article and one or more adjacent barrier layers are index-matched and have similar refractive indices, so that a majority of light transmitted through the barrier layer toward the molded article passes from the barrier layer into the nanostructured layer. This index matching reduces optical losses at the interface between the barrier material and the matrix material.

[0275]

[0276] The barrier layer is suitably a solid material and may be a hardened liquid, gel, or polymer. The barrier layer may comprise a flexible or non-flexible material depending on the particular application. The barrier layer is preferably a planar layer and may comprise any suitable shape and surface area configuration depending on the particular light-emitting application. In some embodiments, one or more barrier layers are compatible with layer-by-layer processing techniques, whereby a nanostructured layer is disposed on at least a first barrier layer and at least a second barrier layer is disposed on the nanostructured layer opposite the nanostructured layer to form a shaped article according to one embodiment. Suitable barrier materials include any suitable barrier material known in the art. In some embodiments, suitable barrier materials include glass, polymers, and oxides. Suitable barrier layer materials include, but are not limited to, polymers such as polyethylene terephthalate (PET); oxides such as silicon oxide, titanium oxide, or aluminum oxide (e.g., SiO2, SiO3, TiO2, or Al2O3); and suitable combinations thereof. Preferably, each barrier layer of the molded article comprises at least two layers comprising different materials or compositions, and this multi-layer barrier prevents or reduces alignment of pinhole defects in the barrier layer and provides an effective barrier against oxygen and moisture penetration into the nanostructured layer. The nanostructured layer can comprise any suitable material or combination of materials, and any suitable number of barrier layers on either or both sides of the nanostructured layer. The material, thickness, and number of barrier layers depend on the particular application and are suitably selected to minimize the thickness of the molded article while maximizing the barrier protection and brightness of the nanostructured layer. In preferred embodiments, each barrier layer comprises a laminate film, preferably a bilaminate film, where the thickness of each barrier layer is thick enough to avoid wrinkles during roll-to-roll or additive manufacturing processes. The number or thickness of the barriers may further depend on regulatory toxicity guidelines in embodiments where the nanostructures contain heavy metals or other toxic materials, which may require more or thicker barrier layers. Additional barrier considerations include cost, availability, and mechanical strength.

[0276]

[0277] In some embodiments, the nanostructured film comprises two or more barrier layers adjacent to each side of the nanostructured layer, e.g., two or three layers on each side of the nanostructured layer, or two barrier layers on each side. In some embodiments, each barrier layer comprises a thin glass sheet, e.g., a glass sheet having a thickness of about 100 μm, 100 μm or less, or 50 μm or less.

[0277]

[0278] Each barrier layer of the shaped article can have any suitable thickness, depending on the light-emitting device and application, as well as the specific requirements and properties of the individual film components, such as the barrier layer and the nanostructured layer, as will be understood by those skilled in the art. In some embodiments, each barrier layer can have a thickness of 50 μm or less, 40 μm or less, 30 μm or less, 25 μm or less, 20 μm or less, or 15 μm or less. In some embodiments, the barrier layer comprises an oxide coating that can include materials such as silicon oxide, titanium oxide, and aluminum oxide (e.g., SiO, SiO, TiO, or AlO). The oxide coating can have a thickness of about 10 μm or less, 5 μm or less, 1 μm or less, or 100 nm or less. In some embodiments, the barrier comprises a thin oxide coating with a thickness of about 100 nm or less, 10 nm or less, 5 nm or less, or 3 nm or less. The top and / or bottom barriers can consist of a thin oxide coating, or can comprise a thin oxide coating and one or more additional material layers.

[0278] Molded articles with improved properties

[0279] In some embodiments, molded articles made with nanostructures have a porosity of between about 1.5% and about 20%, between about 1.5% and about 15%, between about 1.5% and about 12%, between about 1.5% and about 10%, between about 1.5% and about 8%, between about 1.5% and about 4%, between about 1.5% and about 3%, between about 3% and about 20%, between about 3% and about 15%, between about 3% and about 12% In some embodiments, the nanostructures are quantum dots. In some embodiments, the molded article is a light emitting diode.

[0279]

[0280] In some embodiments, molded articles made with the nanostructures exhibit a photoluminescence spectrum with an emission maximum between 450 nm and 550 nm. In some embodiments, molded articles made with the nanostructures exhibit a photoluminescence spectrum with an emission maximum between 450 nm and 460 nm. In some embodiments, the photoluminescence spectrum of the core / shell nanostructures has an emission maximum between about 450 nm and about 460 nm.

[0280]

[0281] The following examples are illustrative, but not limiting, of the products and processes described herein. Suitable modifications and adaptations of the variety of conditions, formulations, and other parameters normally encountered in the art and which will become apparent to those skilled in the art in light of this disclosure are within the spirit and scope of the invention. [Example]

[0281] Example Example 1 ZnSe using the co-implantation method 1-x Te x Synthesis of alloy nanostructures

[0282] A TOPTe precursor mixture was prepared by first diluting TOPTe (1.0 M Te, 460 μL) with 5.0 mL of dry, distilled oleylamine. To this solution was added lithium triethylborohydride (1.0 M in THF, 460 μL), resulting in a deep green solution. Finally, zinc oleate (0.5 M in TOP, 920 μL) was added, resulting in a colorless, opaque, viscous gel that could be drawn into a syringe.

[0282]

[0283] Oleylamine (30.0 mL) was added to a 250 mL three-neck flask and degassed under vacuum at 110 °C for 30 minutes. The mixture was heated to 300 °C under a nitrogen flow. After reaching this temperature, a solution of trioctylphosphine selenide (TOPSe, 5.4 mmol) and diphenylphosphine (535 μL) in TOP (5.8 mL total) was added to the flask. After the temperature was returned to 300 °C, the TOPTe precursor formulation and a solution of diethylzinc (590 μL) in TOP (2.0 mL) were rapidly injected simultaneously from separate syringes. The temperature was set to 280 °C, and after 5 minutes, injection of a solution of diethylzinc (588 μL) and TOPSe (8.45 mmol) in TOP (7.6 mL total) was initiated at a rate of 1.0 mL / min, with a 10-minute pause after the addition of 7.6 mL. After the precursor injection was completed, the reaction mixture was maintained at 280 °C for 5 minutes and then cooled to room temperature. The growth solution was diluted with an equal volume of toluene, and the nanocrystals were precipitated by adding ethanol. After centrifugation, the supernatant was discarded, and the nanocrystals were redispersed in toluene. The concentration was measured as the dry weight by evaporating the solvent of an aliquot. The dried material was further subjected to thermogravimetric analysis to determine the inorganic content.

[0283] Example 2 ZnSe using offset implantation method 1-x Te x Synthesis of alloy nanostructures

[0284] A TOPTe precursor mixture was prepared by first diluting TOPTe (1.0 M Te, 460 μL) with 5.0 mL of dry, distilled oleylamine. To this solution was added lithium triethylborohydride (1.0 M in THF, 460 μL), resulting in a deep purple solution. Finally, zinc oleate (0.5 M in TOP, 920 μL) was added, resulting in a colorless, opaque, viscous gel that could be drawn into a syringe.

[0284]

[0285] Oleylamine (30 mL) was added to a 100 mL three-neck flask and degassed under vacuum at 110 °C for 30 minutes. The mixture was heated to 300 °C under a nitrogen flow. After reaching this temperature, a solution of trioctylphosphine selenide (TOPSe, 5.4 mmol) and diphenylphosphine (535 μL) in TOP (5.8 mL total) was added to the flask. The temperature was returned to 300 °C, and the TOPTe precursor formulation described above was rapidly injected. After 3 seconds, a solution of diethylzinc (590 μL) in TOP (2.0 mL) was injected. The temperature was set to 280 °C, and after 5 minutes, injection of a solution of diethylzinc (588 μL) and TOPSe (8.45 mmol) in TOP (7.6 mL total) was initiated at a rate of 1.0 mL / min, with a 10-minute pause after the addition of 7.6 mL. After the precursor injection was complete, the reaction mixture was maintained at 280 °C for 5 minutes and then cooled to room temperature. The growth solution was diluted with an equal volume of toluene, and the nanocrystals were precipitated by adding ethanol. After centrifugation, the supernatant was discarded, and the nanocrystals were redispersed in toluene. The concentration was measured as the dry weight by evaporating the solvent of an aliquot. The dried material was further subjected to thermogravimetric analysis to determine the inorganic content.

[0285] Example 3 ZnSe 1-x Te x Synthesis of ZnSe / ZnS core / shell nanostructures

[0286] ZnSe using the procedure described in U.S. Patent Application Publication No. 2017 / 066965 1-x Te x ZnSe shell or ZnSe / ZnS multishell coating was carried out on the alloy nanocrystals.

[0286] Example 4 ZnSe 1-x Te x Properties of core / shell nanostructures

[0287] ZnSe prepared using simultaneous and offset implantation methods 1-x Te x The solution photoluminescence spectra of the ZnSe / ZnS core / shell / shell nanostructure are shown in Figure 2. As shown in Figure 2, red shifts are achieved using both the simultaneous injection and offset injection methods. The offset injection method resulted in a narrower peak, which was attributed to the promotion of ZnTe formation. 1-x Te x / ZnSe core / shell or ZnSe 1-x Te x The optical properties of the / ZnSe / ZnS core / shell / shell nanostructures can be tuned by varying the number of shell monolayers as shown in Table 1.

[0287] [Table 1]

[0288] Example 5 ZnSe with narrow FWHM and high QY 1-x Te x Alloy nanocrystals and ZnSe 1-x Te x / ZnSe / ZnS quantum dots A: ZnSe using reduced TOP-Te 1-x Te x Synthesis of alloy nanocrystals A Te precursor mixture was prepared by first diluting TOPTe (1MTe, 690 μL) with 4.0 mL of dry, distilled oleylamine. To this solution was added lithium triethylborohydride (1 M in THF, 690 μL), resulting in a deep green solution. Finally, zinc oleate (0.5 M in TOP, 1180 μL) was added, resulting in a colorless, opaque, viscous gel that could be drawn into a syringe. (In Entry 7 of Table 2 below, 1036 μL TOPTe, 1036 μL LiEtBH, and 2.08 mL ZnOA / TOP were used instead.)

[0289] Oleylamine (30 mL) and anhydrous zinc fluoride (118 mg, 1.04 mmol) were added to a 250 mL three-neck flask and degassed under vacuum at 110 °C for 30 minutes (item 7 did not contain ZnF2; all others did). The mixture was then heated to 300 °C under a nitrogen stream. After reaching this temperature, a solution of trioctylphosphine selenide (TOPSe, 5.4 mmol) and diphenylphosphine (535 μL) in TOP (5.8 mL total) was added to the flask. The temperature was returned to 280 °C, and the Te precursor formulation described above was then rapidly injected. After 3 seconds, a solution of diethylzinc (590 μL) in TOP (2.0 mL) was rapidly injected. The temperature was set to 280 °C. After 5 min, injection of a solution of diethylzinc (588 μL) and TOPSe (8.4 mmol) in TOP (7.6 mL total) was initiated at a rate of 1.0 mL / min and continued until all 7.6 mL had been added. After the precursor injection was completed, the reaction mixture was maintained at 280 °C for 5 min and then cooled to room temperature. The growth solution was diluted with an equal volume of toluene (60 mL), and the nanocrystals were precipitated by adding ethanol (120 mL). After centrifugation, the supernatant was discarded, and the nanocrystals were redispersed in hexane (5 mL). The concentration was measured as the dry weight by evaporating the solvent of an aliquot. The dried material was further subjected to thermogravimetric analysis to determine the inorganic content.

[0290] B:ZnSe 1-x Te x Synthesis of ZnSe / ZnSe buffer nanocrystals In this example, a 2.3 nm average diameter ZnSe shell with a target shell thickness of 1 ML of ZnSe was used. 1-x Te x The coating of one monolayer ZnSe buffer layer on the alloy nanocrystals is described (entries 1 and 3-7 in Table 2 include this reaction sequence).

[0291] A 100 mL three-neck flask was charged with zinc oleate (6.23 g), lauric acid (3.96 g), trioctylphosphine oxide (4.66 g), zirconium fluoride (644 mg), and TOP (9.4 mL). (Reactions for entries 1 and 6 in Table 2 did not contain lauric acid.) The flask was then subjected to three vacuum and nitrogen fill cycles, then heated to 100° C. and degassed for 30 minutes. The reaction mixture was placed under a nitrogen blanket, and the ZnSe 1-x Te x The core solution (4.0 mL, 28.0 mg / mL in hexane) was mixed with TOP-Se (1.8 mL of 0.3 M selenium in TOP) and added to the flask. The flask was then evacuated for 2 minutes and then heated to 310 °C under a nitrogen stream. After reaching this temperature, the solution was immediately cooled to room temperature. The reaction mixture was diluted with toluene (45 mL). The largest core / shell nanocrystals were precipitated by adding ethanol (64 mL), then isolated by centrifugation, the supernatant was decanted, and the pelleted nanocrystals were discarded. The supernatant from the previous step was then thoroughly precipitated by adding ethanol (75 mL), then isolated by centrifugation, the supernatant was decanted, and redispersed in hexane (5 mL). The solution was filtered through a PTFE 0.45 μm syringe filter. The concentration was measured as the dry weight by evaporating the solvent of an aliquot. The dried material was further subjected to thermogravimetric analysis to determine the inorganic content.

[0292] C:ZnSe 1-x Te x Synthesis of ZnSe / ZnSe buffer nanocrystals In this example, a 4.0 nm average diameter ZnSe shell with a target shell thickness of 4 ML of ZnSe was used.1-x Te x The coating of a ZnSe buffer layer on alloy nanocrystals is described.

[0293] A 100 mL three-neck flask was charged with zinc oleate (6.23 g), trioctylphosphine oxide (4.66 g), zirconium fluoride (644 mg), and TOP (9.4 mL). (In some cases, zinc fluoride (333.8 mg) was also added; the reaction leading to entry #2 in Table 2 also included lauric acid (3.39 g), while the remaining reactions did not; the reaction leading to entry #4 in Table 2 included tri-n-octylamine (TOA) in place of trioctylphosphine oxide; and the reactions leading to entries 3-5 in Table 2 included both zirconium fluoride and zinc fluoride.) The flask was then subjected to three vacuum and nitrogen fill cycles, then heated to 100°C and degassed for 30 minutes. The reaction mixture was placed under a nitrogen blanket, and ZnSe was added. 1-x Te x The core solution (4.0 mL, 28.0 mg / mL in hexane) mixed with TOP-Se (1.8 mL of 0.3 M selenium in TOP) was added to the flask. The flask was then evacuated for 2 minutes and then heated to 310 °C under a nitrogen stream. After reaching this temperature, a slow injection of TOP-Se (10.4 mL, 0.3 M in TOP) was initiated at a rate of 0.325 mL / min. After the selenium injection was completed, the reaction was maintained at 310 °C for 5 minutes and then cooled to room temperature (the reaction mixture leading to entries 3–5 in Table 2 was maintained at 340 °C). The reaction mixture was diluted with toluene (45 mL). The core / shell nanocrystals were precipitated by adding ethanol (135 mL), isolated by centrifugation, the supernatant was decanted, and the nanocrystals were redispersed in hexane (5 mL). The solution was filtered through a PTFE 0.22 μm syringe filter, and the concentration was measured as the dry weight by evaporating the solvent of an aliquot. The dried material was further subjected to thermogravimetric analysis to determine the inorganic content.

[0294] D:ZnSe 1-x Te xSynthesis of ZnSe / ZnS core / shell nanocrystals In this example, a 6.1 nm average diameter ZnSe shell with a target shell thickness of 2-4 ML of ZnS was used. 1-x Te x The coating of ZnS shells on ZnSe / ZnS alloy nanocrystals is described (items 1 to 3, and 5 in Table 2).

[0295] A 25 mL three-neck flask was charged with zinc oleate (375 mg), trioctylphosphine oxide (281 mg), lauric acid (259 mg), zinc fluoride (648 mg), and TOP (0.566 mL). (Only the reaction mixture leading to Table 2, entry #2, contained lauric acid at this step; the reaction mixture leading to Table 2, entries 3 and 5, contained 389 mg zinc fluoride.) Zirconium fluoride (75 mg) was also added to the reaction mixture leading to Table 2, entries 3 and 5. The flask was then subjected to three vacuum and nitrogen fill cycles, then heated to 100° C. and degassed for 30 minutes. The reaction mixture was placed under a nitrogen blanket, and ZnSe was added. 1-x Te xThe core solution (0.30 mL, 216.0 mg / mL in hexane, obtained in Section C above) mixed with zinc oleate / TOP-S (0.064 mL of 2.0 M sulfur in TOP + 0.254 mL of 0.5 M zinc oleate in TOP) was added to the flask. The flask was then evacuated for 2 minutes and then heated to 310 °C under a nitrogen stream. After reaching this temperature, a slow injection of zinc oleate / TOP-S (2 mL, 0.3 M in TOP) was initiated at a rate of 0.103 mL / min. After the sulfur injection was completed, the reaction was maintained at 310 °C for 5 minutes and then cooled to room temperature (the reaction mixture leading to entries 3 and 5 in Table 2 was maintained at 340 °C). The reaction mixture was diluted with toluene (5 mL). The core / shell nanocrystals were precipitated by adding ethanol (10 mL) and then isolated by centrifugation. The supernatant was decanted and the nanocrystals were redispersed in hexane (5 mL). The precipitation was repeated once with ethanol (10 mL), and finally the nanocrystals were redispersed in octane (3 mL). The solution was filtered through a PTFE 0.22 μm syringe filter, and the concentration was adjusted to 18 mg / mL after measuring the dry weight of an aliquot.

[0296]

[0296] The optical properties of the nanostructures made according to this example are shown in Table 2. Unexpectedly, these nanostructures exhibited a much higher QY than the nanostructures made according to Example 4.

[0297] [Table 2]

[0298]

[0297] While various embodiments have been described above, it should be understood that they are provided by way of example only, not limitation. It will be apparent to those skilled in the relevant art that various changes in form and detail can be made therein without departing from the spirit and scope of the present invention. Accordingly, the breadth and scope thereof should not be limited to the exemplary embodiments described above, but should be defined only by the following claims and their equivalents.

[0299]

[0298] All publications, patents, and patent applications mentioned in this specification are indicative of the level of skill of those skilled in the art to which this invention pertains, and are hereby incorporated by reference to the same extent as if each individual publication, patent, or patent application was specifically and individually indicated to be incorporated by reference.

Claims

1. A nanostructure comprising a core surrounded by a shell, said core being ZnSe １－ｘ Te ｘ (where 0.05<x<1), wherein the shell comprises at least 4-6 monolayers of ZnSe or / and 4-6 monolayers of ZnS, the nanostructure has a full width at half maximum (FWHM) of 20 nm to 30 nm, and the nanostructure exhibits a photoluminescence quantum yield of 80% to 90%.

2. 10. The nanostructure of claim 1, wherein the nanostructure has an emission wavelength of 440 nm to 460 nm.

3. 3. The nanostructure of claim 1 or 2, wherein the core is surrounded by two shells.

4. A nanostructure as described in claim 1 or 2, wherein the shell further comprises a layer selected from the group consisting of ZnS, ZnSe, ZnTe, and alloys thereof.

5. The nanostructure of any one of claims 1 to 4, wherein the nanostructure comprises two shells, a first shell comprising ZnSe and a second shell comprising ZnS.

6. The nanostructure of any one of claims 1 to 5, wherein the nanostructure is a quantum dot.

7. The nanostructure of any one of claims 1 to 6, wherein the nanostructure is cadmium-free.

8. A device comprising the nanostructure of any one of claims 1 to 7.

9. ZnSe １－ｘ Te ｘ 1. A method for producing nanocrystals, comprising: (a) combining a tellurium source, at least one ligand, and a reducing agent to form a reaction mixture; (b) contacting the reaction mixture obtained in (a) with a solution comprising at least one ligand, zinc fluoride, and a selenium source; (c) contacting the reaction mixture obtained in (b) with a zinc source; ZnSe １－ｘ Te ｘ Obtaining nanocrystals; A method comprising:

10. 10. The method of claim 9, further comprising: (d) contacting the reaction mixture in (c) with a zinc carboxylate and a selenium source.

11. 1. A method for producing a core / shell nanostructure, comprising: (e) ZnSe prepared as claimed in claim 9 or 10 １－ｘ Te ｘ mixing the nanocrystals with a solution comprising a zinc source; (f) contacting the reaction mixture of (e) with a source of selenium or a source of sulfur; A method comprising:

12. 12. The method of claim 11, further comprising: (g) contacting the reaction mixture of (f) with a selenium source or a sulfur source; wherein the source used in (g) is different from the source used in (f).

13. 1. A nanostructured shaped article comprising: (a) a first conductive layer; (b) a second conductive layer; (c) a nanostructured layer between the first conductive layer and the second conductive layer; The nanostructure layer comprises a population of nanostructures including a core surrounded by a shell, the core being ZnSe. １－ｘ Te ｘ (0.05<x<1), wherein the shell comprises at least 4-6 monolayers of ZnSe or / and 4-6 monolayers of ZnS, the nanostructures have a full width at half maximum (FWHM) of 20 nm to 30 nm, and the nanostructures exhibit a photoluminescence quantum yield of 80% to 90%.

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