Capacitor Array

Abstract

This capacitor array 1 comprises multiple capacitor units 1U which are arranged in a planar direction. Each of the capacitor units 1U includes a capacitor element 10, a first through conductor 20A, and a second through conductor 20B. The capacitor element 10 includes a first electrode layer (for example, anode plate 11), a second electrode layer (for example, cathode layer 12), and a dielectric layer 13. The first electrode layer and the second electrode layer face each other via the dielectric layer 13 in a thickness direction orthogonal to the planar direction. The first through conductor 20A is disposed at least on an inner wall surface of a first through hole 50A, which penetrates through the capacitor element 10 in the thickness direction, and is electrically connected to the first electrode layer. The second through conductor 20B is disposed at least on an inner wall surface of a second through hole 50B, which penetrates through the capacitor element 10 in the thickness direction, and is electrically connected to the second electrode layer. In a plane view of the capacitor array 1 from the thickness direction, the area of the capacitor unit 1U, the diameter of the first through hole 50A, the area of the first through conductor 20A in the first through hole 50A, the diameter of the second through hole 50B, the area of the second through conductor 20B in the second through hole 50B, and the center-to-center distance between the first through conductor 20A and the second through conductor 20B are equal between the capacitor units 1U. Where the area of the first through conductor 20A in the first through hole 50A of the capacitor units 1U is STH1, the area of the second through conductor 20B in the second through hole 50B thereof is STH2, and the total number of the capacitor units 1U included in the capacitor array 1 is N, when a correlation of an electrostatic capacity Cunit per one unit to a center-to-center distance p between the first through conductor 20A and the second through conductor 20B is obtained from virtual units which satisfy all of conditions 1 to 4 (namely, condition 1: the total number of the virtual units included in the capacitor array 1 is n; condition 2: in a plane view of the capacitor array 1 from the thickness direction, the area of the virtual unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equal between the virtual units; condition 3: the area of the first through conductor in the first through hole of the virtual unit is sth1, and the area of the second through conductor in the second through hole thereof is sth2; and condition 4: the value of (sth1 + sth2 x n is equal to the value of (STH1 + STH2) x N)), a substantive total capacity which corresponds to an electrostatic capacity for the total area of the capacitor units 1U out of the total electrostatic capacity of the capacitor array 1 is greater than a virtual total capacity which is obtained by multiplying the total number n of virtual units corresponding to a center-to-center distance p obtained when the electrostatic capacity Cunit per one unit has a maximum value by the maximum value of the electrostatic capacity Cunit per one unit.

Description

[Technical Field]

[0001] The present invention relates to a capacitor array. [Background technology]

[0002] Patent Document 1 discloses a capacitor array including multiple solid electrolytic capacitor elements formed by dividing a single solid electrolytic capacitor sheet, a sheet-like first sealing layer, and a sheet-like second sealing layer. The solid electrolytic capacitor sheet includes an anode plate made of a valve metal, a porous layer provided on at least one main surface of the anode plate, a dielectric layer provided on the surface of the porous layer, and a cathode layer including a solid electrolyte layer provided on the surface of the dielectric layer, and has first and second main surfaces opposing each other in the thickness direction. The first main surface side of each of the multiple solid electrolytic capacitor elements is disposed on the first sealing layer. The second sealing layer is disposed so as to cover the multiple solid electrolytic capacitor elements on the first sealing layer from the second main surface side. The solid electrolytic capacitor elements are separated by slit-shaped sheet removal portions. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-167361 Summary of the Invention [Problem to be solved by the invention]

[0004] Patent Document 1 describes that it is preferable to provide a through electrode that penetrates the first sealing layer or the second sealing layer in the thickness direction, and to connect the anode plate or the cathode layer to an external electrode via the through electrode.

[0005] For example, Figure 22 of Patent Document 1 describes a structure in which a capacitor unit is formed by an effective capacitor portion present around a pair of through electrodes (hereinafter referred to as through conductors), and the capacitor units are repeatedly arranged in a group.

[0006] When a large current is passed through a capacitor array such as that described in Patent Document 1, it is necessary to increase the amount of conductor in the through conductor by methods such as increasing the diameter of the through conductor or increasing the number of through conductors. However, if the amount of conductor in the through conductor is large relative to the area occupied by the capacitor array, the capacitance of the capacitor unit decreases accordingly, and therefore the capacitance of the entire capacitor array decreases.

[0007] The above problem is not limited to solid electrolytic capacitor elements, but is a common problem in capacitor arrays that include a plurality of capacitor elements.

[0008] The present invention has been made to solve the above problems, and has an object to provide a capacitor array having a large overall capacitance relative to the amount of conductor required for the amount of current flowing through the capacitor. [Means for solving the problem]

[0009] The capacitor array of the present invention includes a plurality of capacitor units arranged in a planar direction. Each of the capacitor units includes a capacitor element, a first through conductor, and a second through conductor. The capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer. The first electrode layer and the second electrode layer face each other in a thickness direction perpendicular to the planar direction, via the dielectric layer. The first through conductor is provided on at least an inner wall surface of a first through hole that penetrates the capacitor element in the thickness direction, and is electrically connected to the first electrode layer. The second through conductor is provided on at least an inner wall surface of a second through hole that penetrates the capacitor element in the thickness direction, and is electrically connected to the second electrode layer. In a plan view in the thickness direction of the capacitor array, the area of the capacitor unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are all equivalent among the capacitor units. TH1 , the area of the second through conductor in the second through hole is S TH2 When the total number of the capacitor units included in the capacitor array is N, the capacitance C per unit for the center distance p between the first through conductor and the second through conductor is calculated from a hypothetical unit that satisfies all of the following conditions 1 to 4: unit When the correlation of Condition 1: The total number of the virtual units included in the capacitor array is n. Condition 2: In a plan view of the capacitor array in the thickness direction, the area of the virtual unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equivalent among the virtual units. Condition 3: The area of the first through conductor in the first through hole of the virtual unit is s th1 , the area of the second through conductor in the second through hole is s th2 That is, Condition 4: (s th1 +s th2 )×n is (S TH1 +S TH2 ) × N, The capacitance C per unit unit The total number n of the virtual units corresponding to the center distance p when the value of is maximum is expressed as the capacitance C per unit. unit The actual total capacitance, which corresponds to the capacitance of the total area of the capacitor units out of the capacitance of the entire capacitor array, is larger than the virtual total capacitance obtained by multiplying the maximum value of [Effects of the Invention]

[0010] According to the present invention, it is possible to provide a capacitor array having a large overall capacitance relative to the amount of conductor required for the amount of current flowing through the capacitor. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a plan view schematically showing an example of a capacitor array of the present invention. [Figure 2] FIG. 2 is an enlarged plan view of a portion indicated by II in the capacitor array shown in FIG. [Figure 3] FIG. 3 is an example of a cross-sectional view of the capacitor array shown in FIG. 2 taken along line III-III. [Figure 4] FIG. 4 is an example of a plan view taken along line IV-IV of the capacitor array shown in FIG. [Figure 5] FIG. 5 is an example of a graph showing the correlation of the capacitance Cunit per unit or the virtual total capacitance with respect to the center-to-center distance p between the first through conductor and the second through conductor. [Figure 6] FIG. 6 is a plan view schematically showing an example of the arrangement of first through conductors and second through conductors in a capacitor array according to the present invention. [Figure 7] FIG. 7 is a plan view for explaining an example of the arrangement shown in FIG. [Figure 8]FIG. 8 is a plan view for explaining another example of the arrangement shown in FIG. [Figure 9] FIG. 9 is a plan view schematically showing another example of the arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention. [Figure 10] FIG. 10 is a plan view for explaining an example of the arrangement shown in FIG. [Figure 11] FIG. 11 is a plan view for explaining another example of the arrangement shown in FIG. [Figure 12] FIG. 12 is a plan view showing an example of a capacitor unit in the arrangement shown in FIG. [Figure 13] FIG. 13 is a plan view showing an example of a capacitor unit in the arrangement shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0012] The capacitor array of the present invention will be described below. Note that the present invention is not limited to the following configuration, and may be modified as appropriate within the scope of the present invention. Furthermore, a combination of multiple individual preferred configurations described below also constitutes the present invention.

[0013] In this specification, terms indicating the relationship between elements (e.g., "perpendicular," "parallel," "orthogonal," etc.) and terms indicating the shape of elements are not expressions that only express a strict meaning, but are expressions that also include a range of substantial equivalence, for example, a difference of a few percent.

[0014] The drawings shown below are schematic diagrams, and the dimensions, aspect ratio, and other scales may differ from those of the actual product. In the drawings, the same or equivalent parts will be designated by the same reference numerals. In addition, the same elements will be designated by the same reference numerals in each drawing, and duplicate explanations will be omitted.

[0015] Fig. 1 is a plan view schematically showing an example of a capacitor array of the present invention, and Fig. 2 is an enlarged plan view of a portion indicated by II in the capacitor array shown in Fig. 1.

[0016] The capacitor array 1 shown in FIG. 1 includes a plurality of capacitor units 1U (see FIG. 2) arranged in a planar direction.

[0017] The number of capacitor units 1U included in the capacitor array 1 is not particularly limited as long as it is two or more.

[0018] As shown in FIGS. 1 and 2, each of the capacitor units 1U includes a capacitor element 10, a first through conductor 20A, and a second through conductor 20B.

[0019] The configuration of capacitor element 10 is preferably the same among capacitor units 1U.

[0020] Adjacent capacitor elements 10 between capacitor units 1U may or may not be separated by a through groove. When adjacent capacitor elements 10 between capacitor units 1U are separated by a through groove, the adjacent capacitor elements 10 only need to be physically separated. Therefore, adjacent capacitor elements 10 may be electrically separated or electrically connected. For example, a combination of electrically separated capacitor elements 10 and electrically connected capacitor elements 10 may be present.

[0021] Fig. 3 is an example of a cross-sectional view taken along line III-III of the capacitor array shown in Fig. 2. Fig. 1 is an example of a plan view taken along line II of the capacitor array shown in Fig. 3.

[0022] In the example shown in Figure 3, the capacitor array 1 further includes a sealing layer 30, a first conductor wiring layer 40A, and a second conductor wiring layer 40B in addition to a capacitor unit 1U (see Figure 2) including a capacitor element 10, a first through conductor 20A, and a second through conductor 20B.

[0023] Capacitor element 10 includes a first electrode layer, a second electrode layer, and a dielectric layer. The first electrode layer and the second electrode layer face each other in the thickness direction perpendicular to the planar direction, with the dielectric layer interposed therebetween.

[0024] In the example shown in Fig. 3, capacitor element 10 includes an anode plate 11, a cathode layer 12, and a dielectric layer 13. Anode plate 11 and cathode layer 12 face each other in a thickness direction (up-down direction in Fig. 3) perpendicular to a planar direction (left-right direction in Fig. 3) with dielectric layer 13 interposed therebetween. That is, anode plate 11 corresponds to a first electrode layer, and cathode layer 12 corresponds to a second electrode layer. Thus, capacitor element 10 constitutes an electrolytic capacitor.

[0025] The anode plate 11 has, for example, a core 11A made of metal and a porous portion 11B provided on at least one main surface of the core 11A. In the example shown in Fig. 3, the porous portion 11B is provided on both main surfaces of the core 11A, but the porous portion 11B may be provided on only one main surface of the core 11A. A dielectric layer 13 is provided on the surface of the porous portion 11B, and a cathode layer 12 is provided on the surface of the dielectric layer 13.

[0026] Cathode layer 12 includes, for example, solid electrolyte layer 12A provided on the surface of dielectric layer 13. Cathode layer 12 preferably further includes conductor layer 12B provided on the surface of solid electrolyte layer 12A. When cathode layer 12 includes solid electrolyte layer 12A, capacitor element 10 constitutes a solid electrolytic capacitor.

[0027] As shown in FIG. 3 , the first through conductor 20A is provided on at least the inner wall surface of the first through hole 50A that penetrates the capacitor element 10 in the thickness direction. That is, the first through conductor 20A may be provided only on the inner wall surface of the first through hole 50A, or may be provided throughout the entire interior of the first through hole 50A. When the first through conductor 20A is provided only on the inner wall surface of the first through hole 50A, the space surrounded by the first through conductor 20A within the first through hole 50A may be filled with a material containing resin. That is, a first resin filling portion 25A may be provided inside the first through conductor 20A. In the example shown in FIG. 3 , the first through conductor 20A is provided on the inner wall surface of the first through hole 50A that penetrates the sealing layer 30 and the capacitor element 10 in the thickness direction.

[0028] As shown in FIGS. 1 and 2, the first through conductor 20A is preferably present within the cathode layer 12 when viewed in plan in the thickness direction of the anode plate 11.

[0029] 3, the first through conductor 20A is electrically connected to a first electrode layer (e.g., anode plate 11). In the example shown in FIG. 3, the first through conductor 20A is connected at its end to a first conductor wiring layer 40A provided on the surface of the sealing layer 30.

[0030] 3, the first through conductor 20A is preferably electrically connected to the anode plate 11 at the inner wall surface of the first through hole 50A. More specifically, the first through conductor 20A is preferably electrically connected to the end surface of the anode plate 11 that faces the inner wall surface of the first through hole 50A in the planar direction. In this case, no insulating material such as the sealing layer 30 is filled between the end surface of the anode plate 11 and the first through conductor 20A.

[0031] It is preferable that the core portion 11A and the porous portion 11B are exposed on the end surface of the anode plate 11 electrically connected to the first through conductor 20A, as shown in Fig. 3. In this case, the porous portion 11B as well as the core portion 11A are electrically connected to the first through conductor 20A.

[0032] When viewed in the thickness direction of the anode plate 11, the first through conductor 20A is preferably electrically connected to the anode plate 11 over the entire periphery of the first through hole 50A.

[0033] The first through conductor 20A may be electrically connected via an anode connection layer, or may be directly connected to the end face of the anode plate 11.

[0034] As shown in FIG. 3 , the second through conductor 20B is provided on at least the inner wall surface of the second through hole 50B that penetrates the capacitor element 10 in the thickness direction. That is, the second through conductor 20B may be provided only on the inner wall surface of the second through hole 50B, or may be provided throughout the entire interior of the second through hole 50B. When the second through conductor 20B is provided only on the inner wall surface of the second through hole 50B, the space surrounded by the second through conductor 20B within the second through hole 50B may be filled with a material containing resin. That is, a second resin filling portion 25B may be provided inside the second through conductor 20B. In the example shown in FIG. 3 , the second through conductor 20B is provided on the inner wall surface of the second through hole 50B that penetrates the sealing layer 30 and the capacitor element 10 in the thickness direction.

[0035] As shown in FIGS. 1 and 2, the second through conductor 20B is preferably present within the cathode layer 12 when viewed in plan in the thickness direction of the anode plate 11.

[0036] 3, the second through conductor 20B is electrically connected to a second electrode layer (e.g., cathode layer 12). In the example shown in FIG. 3, the second through conductor 20B is connected at its end to a second conductor wiring layer 40B provided on the surface of the sealing layer 30.

[0037] As shown in FIG. 3, an insulating material such as a sealing layer 30 is preferably filled between the end face of the anode plate 11 and the second through conductor 20B.

[0038] Sealing layer 30 is provided to cover capacitor element 10. Capacitor element 10 is protected by sealing layer 30.

[0039] As shown in FIG. 3, sealing layer 30 is preferably provided on both principal surfaces of capacitor element 10 that face each other in the thickness direction.

[0040] As shown in FIGS. 2 and 3, the capacitor element 10 may further include an insulating layer 35 provided on at least one main surface of the anode plate 11 around the first through conductor 20A or the second through conductor 20B.

[0041] As shown in FIG. 2, capacitor element 10 may further include insulating layer 35 provided on at least one main surface of anode plate 11 so as to surround cathode layer 12.

[0042] The first conductor wiring layer 40A is provided on the surface of the sealing layer 30 and is electrically connected to the first through conductor 20A. In the example shown in FIG. 3, the first conductor wiring layer 40A is provided on the surface of the first through conductor 20A and functions as a connection terminal of the capacitor element 10.

[0043] Specifically, in the example shown in FIG. 3, the first conductor wiring layer 40A is electrically connected to the anode plate 11 via the first through conductor 20A, and functions as a connection terminal for the anode plate 11.

[0044] The second conductor wiring layer 40B is provided on the surface of the sealing layer 30 and is electrically connected to the second through conductor 20B. In the example shown in FIG. 3, the second conductor wiring layer 40B is provided on the surface of the second through conductor 20B and functions as a connection terminal of the capacitor element 10.

[0045] Specifically, in the example shown in FIG. 3, the second conductor wiring layer 40B is electrically connected to the cathode layer 12 through a via conductor 45 provided inside the sealing layer 30, and functions as a connection terminal for the cathode layer 12.

[0046] FIG. 4 is an example of a plan view taken along line IV-IV of the capacitor array shown in FIG.

[0047] As shown in FIG. 4, in a plan view from the thickness direction of the capacitor array 1, the area of the capacitor unit 1U, the diameter of the first through hole 50A (D TH1 the area of the first through conductor 20A in the first through hole 50A, the diameter of the second through hole 50B (D TH2 The length indicated by (A), the area of the second through conductor 20B in the second through hole 50B, and the center-to-center distance between the first through conductor 20A and the second through conductor 20B (the length indicated by P in FIG. 4) are the same among the capacitor units 1U.

[0048] In this specification, "equivalent" does not mean only complete equivalence, but also means substantial equivalence, for example, including a difference of a few percent.

[0049] In this specification, the diameter of a through hole means the diameter when the planar shape is circular, and means the equivalent circle diameter when the planar shape is other than circular.

[0050] In this specification, the center of a through conductor refers to the center of the smallest circle that contains the through conductor when viewed from above in the thickness direction of the capacitor array. Therefore, the center-to-center distance between a first through conductor and a second through conductor refers to the length of a line segment connecting the centers of the first through conductor and the second through conductor, as determined by the above method. The same applies to the center-to-center distance between the first through conductor and the first through conductor, and the center-to-center distance between the second through conductor and the second through conductor, which will be described later.

[0051] When viewed from above in the thickness direction of the capacitor array 1, the shapes of the capacitor units 1U are preferably the same among the capacitor units 1U.

[0052] When viewed from above in the thickness direction of the capacitor array 1, the shapes of the first through conductors 20A constituting the capacitor units 1U are preferably the same among the capacitor units 1U.

[0053] In plan view from the thickness direction of the capacitor array 1, the shapes of the second through conductors 20B constituting the capacitor units 1U are preferably the same among the capacitor units 1U.

[0054] In the same capacitor unit 1U, the diameter of first through hole 50A may be different from the diameter of second through hole 50B, but is preferably equal to the diameter of second through hole 50B. Therefore, in all capacitor units 1U, the diameter of first through hole 50A is preferably equal to the diameter of second through hole 50B.

[0055] In the same capacitor unit 1U, the area of the first through conductor 20A in the first through hole 50A may be different from the area of the second through conductor 20B in the second through hole 50B, but is preferably equal to the area of the second through conductor 20B in the second through hole 50B. Therefore, in all capacitor units 1U, the area of the first through conductor 20A in the first through hole 50A is preferably equal to the area of the second through conductor 20B in the second through hole 50B.

[0056] In the capacitor array 1, the capacitance C per unit for the center distance p between the first through conductor and the second through conductor is calculated from the virtual unit by the methods shown in (1) and (2) below. unit When the correlation of the capacitance per unit C unit The total number of virtual units n corresponding to the center distance p when is the maximum value is expressed as the capacitance C per unit. unit The actual total capacitance, which corresponds to the capacitance of the total area of the capacitor units 1U out of the capacitance of the entire capacitor array 1, is larger than the virtual total capacitance obtained by multiplying the maximum value of

[0057] (1) In the capacitor unit 1U, the area of the first through conductor 20A in the first through hole 50A is S TH1 , the area of the second through conductor 20B in the second through hole 50B is S TH2When the total number of capacitor units 1U included in the capacitor array 1 is N, it is assumed that a virtual unit that satisfies all of the following conditions 1 to 4 is included in the capacitor array 1 in place of the capacitor unit 1U.

[0058] Condition 1: The total number of virtual units included in the capacitor array 1 is n.

[0059] Condition 2: When viewed in a plane from the thickness direction of the capacitor array 1, the area of the virtual unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are the same between the virtual units.

[0060] It is preferable that the shapes of the virtual units are the same in plan view from the thickness direction of the capacitor array 1.

[0061] In plan view from the thickness direction of the capacitor array 1, the shapes of the first through conductors that make up the virtual units are preferably the same among the virtual units.

[0062] In plan view from the thickness direction of the capacitor array 1, the shapes of the second through conductors that make up the virtual units are preferably the same among the virtual units.

[0063] In the same virtual unit, the diameter of the first through hole may be different from the diameter of the second through hole, but is preferably equal to the diameter of the second through hole 2. Therefore, in all virtual units, the diameter of the first through hole is preferably equal to the diameter of the second through hole.

[0064] In the same virtual unit, the area of the first through conductor in the first through hole may be different from the area of the second through conductor in the second through hole, but is preferably equal to the area of the second through conductor in the second through hole. Therefore, in all virtual units, the area of the first through conductor in the first through hole is preferably equal to the area of the second through conductor in the second through hole.

[0065] Condition 3: The area of the first through conductor in the first through hole of the virtual unit is s th1 , the area of the second through conductor in the second through hole is s th2 is.

[0066] Condition 4: (s th1 +s th2 )×n is (S TH1 +S TH2 ) × N.

[0067] (2) From the above virtual unit, the capacitance C per unit for the center distance p between the first and second through conductors is calculated. unit Calculate the correlation.

[0068] Since the occupied area of the capacitor array 1 is constant, in the virtual unit, (s th1 +s th2 )×n is (S TH1 +S TH2 The area of the virtual unit, the diameter of the first through hole, and the diameter of the second through hole are determined according to the center-to-center distance p between the first through conductor and the second through conductor so that the capacitance C per unit is equal to the value of unit is required.

[0069] Furthermore, the total number of virtual units n corresponding to the center distance p is expressed as the capacitance C per unit. unit By multiplying this, the virtual total capacity can be calculated.

[0070] FIG. 5 shows the capacitance C per unit versus the center distance p between the first and second through conductors. unit 10 is an example of a graph showing the correlation of a virtual overall capacity.

[0071] As shown in Figure 5, the capacitance per unit C unit It can be seen that the center distance p (p0 in FIG. 5) when the virtual total capacitance is at its maximum value does not match the center distance p (p1 in FIG. 5) when the virtual total capacitance is at its maximum value.

[0072] As mentioned above, in the capacitor array 1, the capacitance C per unit is unit The total number of virtual units n corresponding to the center distance p when is the maximum value is expressed as the capacitance C per unit. unit The actual total capacitance, which corresponds to the capacitance of the total area of the capacitor units 1U out of the capacitance of the entire capacitor array 1, is larger than the virtual total capacitance obtained by multiplying the maximum value of

[0073] Here, the capacitance of the entire capacitor array 1 is C total When the total area of the capacitor unit 1U (i.e., the area of the capacitor unit 1U × the value of N) is S1 and the area of the entire capacitor array 1 is S2, the effective total capacitance C is C = C total × S1 / S2. The total area S1 of the capacitor units 1U may be the same as the area S2 of the entire capacitor array 1, or may be smaller than the area S2 of the entire capacitor array 1. Therefore, the effective total capacitance of the capacitor array 1 may not match the capacitance of the entire capacitor array 1. For example, in FIG. 11 described below, the capacitance of the portions located outside the first unit 1UA and fourth unit 1UD, which are part of the capacitor unit 1U, is not included in the effective total capacitance.

[0074] In the example shown in Figure 5, the capacitance per unit C unit The total number of virtual units n corresponding to the center distance p (p0 in Figure 5) when is the maximum value is the capacitance C per unit. unit The virtual total capacitance obtained by multiplying the maximum value of C1, C2, or C3 in FIG. 5 is denoted by C0. Therefore, a capacitor array having a substantial total capacitance greater than the capacitance denoted by C0 is within the scope of the present invention. For example, a capacitor array in which the substantial total capacitance is the capacitance denoted by C1, C2, or C3 in FIG. 5 is within the scope of the present invention. On the other hand, a capacitor array in which the substantial total capacitance is the capacitance denoted by C4 or C5 in FIG. 5 is outside the scope of the present invention.

[0075] In this way, in the capacitor array 1, the overall capacitance can be increased relative to the amount of conductor of the through conductor required depending on the amount of current.

[0076] Fig. 6 is a plan view schematically showing an example of the arrangement of first through conductors and second through conductors in a capacitor array of the present invention, taken at the same position as Fig. 4 (the position of line IV-IV in Fig. 3).

[0077] In the capacitor array 1A shown in Fig. 6, the first through conductors 20A and the second through conductors 20B are arranged in a square configuration as a whole. In the square configuration, the first through conductors 20A or the second through conductors 20B are arranged at each vertex of the square. In the example shown in Fig. 6, the first through conductors 20A and the second through conductors 20B are arranged alternately from top to bottom, and the first through conductors 20A and the second through conductors 20B are arranged alternately from left to right.

[0078] FIG. 7 is a plan view for explaining an example of the arrangement shown in FIG.

[0079] In FIG. 7, the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.

[0080] As shown in Figure 7, when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the second unit 1UB.

[0081] As shown in Figure 7, by forming current paths in parallel with the capacitor array 1A, it is possible to reduce the equivalent series resistance and equivalent series inductance. Furthermore, by equalizing the center-to-center distance between the first through conductors 20A and the second through conductors 20B, it is possible to reduce the impedance difference between the current paths. It is also possible to distribute heat generated by the capacitor array 1A and increase the current capacity.

[0082] As shown in Figure 7, the capacitor unit 1U further includes a third unit 1UC adjacent to the first unit 1UA, and when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the third unit 1UC.

[0083] When the capacitor unit 1U includes the third unit 1UC, it is preferable that the second Through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second Through conductor 20B of the first unit 1UA and the center of the second Through conductor 20B of the second unit 1UB at an angle of 90 degrees or 180 degrees around the center of the second Through conductor 20B of the first unit 1UA in a plan view from the thickness direction of the capacitor array 1A, as shown in Fig. 7. In this case, it is sufficient that the smallest circle that contains the second Through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second Through conductor 20B of the first unit 1UA and the center of the second Through conductor 20B of the second unit 1UB at an angle of 90 degrees or 180 degrees around the center of the second Through conductor 20B of the first unit 1UA in a plan view from the thickness direction of the capacitor array 1A.

[0084] Furthermore, as shown in Figure 7, the capacitor unit 1U further includes a fourth unit 1UD adjacent to the first unit 1UA, and when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the fourth unit 1UD.

[0085] When the capacitor unit 1U includes the fourth unit 1UD, it is preferable that the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA by an angle of 90 degrees or 180 degrees around the center of the second through conductor 20B of the second unit 1UB in a plan view from the thickness direction of the capacitor array 1A, as shown in Fig. 7. In this case, it is sufficient that the smallest circle that contains the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA by an angle of 90 degrees or 180 degrees around the center of the second through conductor 20B of the second unit 1UB in a plan view from the thickness direction of the capacitor array 1A.

[0086] In the example shown in Figure 7, when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the number of second through conductors 20B present within a circle whose radius is the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and whose center is the center of the first through conductor 20A of the first unit 1UA is the same as the number of second through conductors 20B present within a circle whose radius is the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and whose center is the center of the first through conductor 20A of the second unit 1UB.

[0087] As shown in FIG. 7, by arranging capacitor units 1U evenly and in parallel on the evenly arranged current paths, it is possible to enhance the noise removal effect.

[0088] In particular, when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the difference between the total area of the second through conductors 20B that overlap with a circle whose radius is the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and whose center is the center of the first through conductor 20A of the first unit 1UA, and the total area of the second through conductors 20B that exist within a circle whose radius is the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and whose center is the center of the first through conductor 20A of the second unit 1UB, is within ±5%.

[0089] FIG. 8 is a plan view for explaining another example of the arrangement shown in FIG.

[0090] In FIG. 8, the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.

[0091] As shown in Figure 8, when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the second unit 1UB.

[0092] As shown in Figure 8, by forming current paths in parallel with the capacitor array 1A, it is possible to reduce the equivalent series resistance and equivalent series inductance. Furthermore, by equalizing the center-to-center distance between the first through conductors 20A and the second through conductors 20B, it is possible to reduce the impedance difference between the current paths. It is also possible to disperse heat generated by the capacitor array 1A and increase the current capacity.

[0093] As shown in Figure 8, the capacitor unit 1U further includes a third unit 1UC adjacent to the first unit 1UA, and when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the third unit 1UC.

[0094] When the capacitor unit 1U includes the third unit 1UC, it is preferable that the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 90 degrees or 180 degrees around the center of the first through conductor 20A of the first unit 1UA in a plan view from the thickness direction of the capacitor array 1A, as shown in Fig. 8. In this case, it is sufficient that the smallest circle that contains the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 90 degrees or 180 degrees around the center of the first through conductor 20A of the first unit 1UA in a plan view from the thickness direction of the capacitor array 1A.

[0095] Furthermore, as shown in Figure 8, the capacitor unit 1U further includes a fourth unit 1UD adjacent to the first unit 1UA, and when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the fourth unit 1UD.

[0096] When the capacitor unit 1U includes the fourth unit 1UD, it is preferable that the first through conductor 20A of the fourth unit 1UD be located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA by an angle of 90 degrees or 180 degrees around the center of the first through conductor 20A of the second unit 1UB in a plan view from the thickness direction of the capacitor array 1A, as shown in Fig. 8. In this case, it is sufficient that the smallest circle that contains the first through conductor 20A of the fourth unit 1UD be located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA by an angle of 90 degrees or 180 degrees around the center of the first through conductor 20A of the second unit 1UB in a plan view from the thickness direction of the capacitor array 1A.

[0097] In the example shown in Figure 8, when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the number of first through conductors 20A present within a circle whose radius is the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and whose center is the center of the second through conductor 20B of the first unit 1UA is the same as the number of first through conductors 20A present within a circle whose radius is the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and whose center is the center of the second through conductor 20B of the second unit 1UB.

[0098] As shown in FIG. 8, by arranging capacitor units 1U evenly and in parallel on the evenly arranged current paths, the noise removal effect can be improved.

[0099] In particular, when viewed in a plane from the thickness direction of the capacitor array 1A, it is preferable that the difference between the total area of the first through conductors 20A that overlap with a circle whose radius is the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and whose center is the center of the second through conductor 20B of the first unit 1UA, and the total area of the first through conductors 20A that exist within a circle whose radius is the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and whose center is the center of the second through conductor 20B of the second unit 1UB, is within ±5%.

[0100] 9 is a plan view schematically showing another example of the arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention, taken at the same position as in FIG. 4 (the position of line IV-IV in FIG. 3).

[0101] In the capacitor array 1B shown in Fig. 9, the first through conductors 20A and the second through conductors 20B are arranged in a hexagonal pattern as a whole. In the hexagonal pattern, the first through conductors 20A or the second through conductors 20B are arranged at each vertex of a regular hexagon and at the center of the regular hexagon. In the example shown in Fig. 9, the first through conductors 20A and the second through conductors 20B are arranged alternately from top to bottom. Note that when the first through conductors 20A and the second through conductors 20B are arranged in a hexagonal pattern as a whole, for example, the first through conductors 20A and the second through conductors 20B may be arranged alternately two by two from top to bottom.

[0102] FIG. 10 is a plan view for explaining an example of the arrangement shown in FIG.

[0103] In FIG. 10, the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.

[0104] As shown in Figure 10, when viewed in a plane from the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the second unit 1UB.

[0105] As shown in Figure 10, the capacitor unit 1U further includes a third unit 1UC adjacent to the first unit 1UA, and when viewed in a plane from the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the third unit 1UC.

[0106] 10 , in a plan view from the thickness direction of the capacitor array 1B, the second Through conductor 20B of the third unit 1UC preferably exists on a straight line obtained by rotating a line segment connecting the center of the second Through conductor 20B of the first unit 1UA and the center of the second Through conductor 20B of the second unit 1UB at an angle of 60 degrees or 120 degrees around the center of the second Through conductor 20B of the first unit 1UA. In this case, it is sufficient that the smallest circle that contains the second Through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second Through conductor 20B of the first unit 1UA and the center of the second Through conductor 20B of the second unit 1UB at an angle of 60 degrees or 120 degrees around the center of the second Through conductor 20B of the first unit 1UA.

[0107] Furthermore, as shown in Figure 10, the capacitor unit 1U further includes a fourth unit 1UD adjacent to the first unit 1UA, and when viewed in a plane from the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the fourth unit 1UD.

[0108] 10 , when the capacitor unit 1U includes the fourth unit 1UD, the second through conductor 20B of the fourth unit 1UD preferably exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees or 120 degrees around the center of the second through conductor 20B of the second unit 1UB, in a plan view from the thickness direction of the capacitor array 1B. In this case, it is sufficient that the smallest circle that contains the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees or 120 degrees around the center of the second through conductor 20B of the second unit 1UB, in a plan view from the thickness direction of the capacitor array 1B.

[0109] FIG. 11 is a plan view for explaining another example of the arrangement shown in FIG.

[0110] In FIG. 11, the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.

[0111] As shown in Figure 11, when viewed in a plane from the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the second unit 1UB.

[0112] As shown in Figure 11, the capacitor unit 1U further includes a third unit 1UC adjacent to the first unit 1UA, and when viewed in a plane from the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the third unit 1UC.

[0113] 11 , when the capacitor unit 1U includes the third unit 1UC, it is preferable that the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees or 120 degrees around the center of the first through conductor 20A of the first unit 1UA, in a plan view from the thickness direction of the capacitor array 1B. In this case, it is sufficient that the smallest circle that contains the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees or 120 degrees around the center of the first through conductor 20A of the first unit 1UA, in a plan view from the thickness direction of the capacitor array 1B.

[0114] Furthermore, as shown in Figure 11, the capacitor unit 1U further includes a fourth unit 1UD adjacent to the first unit 1UA, and when viewed in a plane from the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the fourth unit 1UD.

[0115] 11 , when the capacitor unit 1U includes the fourth unit 1UD, it is preferable that the first through conductor 20A of the fourth unit 1UD be located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees or 120 degrees around the center of the first through conductor 20A of the second unit 1UB. In this case, it is sufficient that the smallest circle that contains the first through conductor 20A of the fourth unit 1UD be located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees or 120 degrees around the center of the first through conductor 20A of the second unit 1UB.

[0116] As shown in Figure 7 or Figure 10, when the capacitor unit 1U includes a third unit 1UC, it is preferable that, when viewed in a plane from the thickness direction of the capacitor array 1A or 1B, the second through conductor 20B of the third unit 1UC is located on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA and the center of the second through conductor 20B of the second unit 1UB at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the second through conductor 20B of the first unit 1UA.

[0117] As shown in Figure 7 or Figure 10, when the capacitor unit 1U includes the fourth unit 1UD, it is preferable that, when viewed in a plane from the thickness direction of the capacitor array 1A or 1B, the second through conductor 20B of the fourth unit 1UD is located on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the second through conductor 20B of the second unit 1UB.

[0118] As shown in Figure 8 or Figure 11, when the capacitor unit 1U includes a third unit 1UC, it is preferable that, when viewed in a plane from the thickness direction of the capacitor array 1A or 1B, the first through conductor 20A of the third unit 1UC is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor 20A of the first unit 1UA.

[0119] As shown in Figure 8 or Figure 11, when the capacitor unit 1U includes the fourth unit 1UD, it is preferable that, when viewed in a plane from the thickness direction of the capacitor array 1A or 1B, the first through conductor 20A of the fourth unit 1UD is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor 20A of the second unit 1UB.

[0120] FIG. 12 is a plan view showing an example of a capacitor unit in the arrangement shown in FIG.

[0121] As shown in Figure 12, when viewed in a plane from the thickness direction of the capacitor array 1A (see Figure 6), when the center-to-center distance between the first through conductor 20A and the second through conductor 20B is P, it is preferable that the area of the capacitor unit 1U be expressed as 2P x P.

[0122] FIG. 13 is a plan view showing an example of a capacitor unit in the arrangement shown in FIG.

[0123] As shown in Figure 13, when viewed in a plane from the thickness direction of the capacitor array 1B (see Figure 9), when the center-to-center distance between the first through conductor 20A and the second through conductor 20B is P, it is preferable that the area of the capacitor unit 1U be expressed as 2P × √3 / 2 × P.

[0124] The detailed configuration of the capacitor array 1, 1A or 1B will be described below.

[0125] Examples of the planar shape of capacitor unit 1U when viewed in the thickness direction include a rectangle (square or oblong), a quadrangle other than a rectangle, a polygon such as a triangle, a pentagon, or a hexagon, a circle, an ellipse, a combination of these, etc. Furthermore, the planar shape of capacitor unit 1U may be an L-shape, a C-shape, a stepped shape, etc.

[0126] The anode plate 11 is preferably made of a valve metal that exhibits so-called valve action. Examples of the valve metal include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, as well as alloys containing at least one of these metals. Among these, aluminum or an aluminum alloy is preferred.

[0127] The shape of the anode plate 11 is preferably a flat plate, and more preferably a foil. Thus, in this specification, the term "plate-like" includes "foil-like".

[0128] The anode plate 11 only needs to have the porous portion 11B on at least one main surface of the core portion 11A. That is, the anode plate 11 may have the porous portion 11B on only one main surface of the core portion 11A, or may have the porous portion 11B on both main surfaces of the core portion 11A. The porous portion 11B is preferably a porous layer formed on the surface of the core portion 11A, and more preferably an etched layer.

[0129] The thickness of the anode plate 11 before etching is preferably 60 μm or more and 200 μm or less. The thickness of the unetched core portion 11A after etching is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 11B is designed according to the required withstand voltage and capacitance, but the combined thickness of the porous portions 11B on both sides of the core portion 11A is preferably 10 μm or more and 180 μm or less.

[0130] The pore diameter of the porous portion 11B is preferably 10 nm or more and 600 nm or less. The pore diameter of the porous portion 11B means the median diameter D50 measured by a mercury porosimeter. The pore diameter of the porous portion 11B can be controlled, for example, by adjusting various etching conditions.

[0131] The dielectric layer 13 provided on the surface of the porous portion 11B is porous, reflecting the surface condition of the porous portion 11B, and has a finely uneven surface shape. The dielectric layer 13 is preferably made of an oxide film of the valve metal. For example, when an aluminum foil is used as the anode plate 11, the dielectric layer 13 made of an oxide film can be formed by anodizing the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like (also called chemical conversion treatment).

[0132] The thickness of the dielectric layer 13 is designed according to the required withstand voltage and capacitance, but is preferably 10 nm or more and 100 nm or less.

[0133] When the cathode layer 12 includes a solid electrolyte layer 12A, examples of materials constituting the solid electrolyte layer 12A include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene), also known as PEDOT, is particularly preferred. The conductive polymer may also contain a dopant such as polystyrene sulfonate (PSS). The solid electrolyte layer 12A preferably includes an inner layer that fills the pores (recesses) of the dielectric layer 13 and an outer layer that covers the dielectric layer 13.

[0134] The thickness of the solid electrolyte layer 12A from the surface of the porous portion 11B is preferably 2 μm or more and 20 μm or less.

[0135] The solid electrolyte layer 12A is formed, for example, by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment liquid containing a monomer such as 3,4-ethylenedioxythiophene, or by a method of applying a dispersion liquid of a polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 13 and drying it.

[0136] The solid electrolyte layer 12A can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.

[0137] When the cathode layer 12 includes the conductor layer 12B, the conductor layer 12B includes at least one layer selected from a conductive resin layer and a metal layer. The conductor layer 12B may be composed of only a conductive resin layer or only a metal layer. The conductor layer 12B preferably covers the entire surface of the solid electrolyte layer 12A.

[0138] The conductive resin layer may be, for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler.

[0139] Examples of the metal layer include a metal plating film and a metal foil. The metal layer is preferably made of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as the main component. The term "main component" refers to the elemental component with the largest weight ratio.

[0140] The conductor layer 12B includes, for example, a carbon layer provided on the surface of the solid electrolyte layer 12A and a copper layer provided on the surface of the carbon layer.

[0141] The carbon layer is provided to electrically and mechanically connect the solid electrolyte layer 12A and the copper layer. The carbon layer can be formed in a predetermined area by applying a carbon paste to the surface of the solid electrolyte layer 12A by sponge transfer, screen printing, dispenser application, inkjet printing, or other methods. Note that the carbon layer is preferably laminated with the copper layer in the next step while it is still viscous before drying. The thickness of the carbon layer is preferably 2 μm or more and 20 μm or less.

[0142] The copper layer can be formed in a predetermined area by applying a copper paste to the surface of the carbon layer by sponge transfer, screen printing, spray coating, dispenser coating, inkjet printing, etc. The thickness of the copper layer is preferably 2 μm or more and 20 μm or less.

[0143] The first through conductor 20A is formed, for example, as follows. First, a first through hole 50A penetrating the sealing layer 30 and the capacitor element 10 in the thickness direction is formed by processing such as drilling or laser processing. Then, the inner wall surface of the first through hole 50A is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the first through conductor 20A. When forming the first through conductor 20A, for example, metallizing the inner wall surface of the first through hole 50A by processing such as electroless copper plating or electrolytic copper plating facilitates processing. Note that the method of forming the first through conductor 20A may be a method of metallizing the inner wall surface of the first through hole 50A, or a method of filling the first through hole 50A with a metal material, a composite material of metal and resin, or the like.

[0144] The second through conductor 20B is formed, for example, as follows. First, a through hole penetrating the capacitor element 10 in the thickness direction is formed by drilling, laser processing, or other processing. Next, an insulating material such as the sealing layer 30 is filled into the through hole. The portion filled with the insulating material is then processed by drilling, laser processing, or other processing to form the second through hole 50B. At this time, the diameter of the second through hole 50B is made smaller than the diameter of the through hole filled with the insulating material, so that the insulating material is present between the inner wall surface of the through hole filled with the insulating material and the inner wall surface of the second through hole 50B in the planar direction. Then, the inner wall surface of the second through hole 50B is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the second through conductor 20B. When forming the second through conductor 20B, for example, metallizing the inner wall surface of the second through hole 50B by a process such as electroless copper plating or electrolytic copper plating can facilitate processing. As for the method of forming the second through conductor 20B, in addition to the method of metallizing the inner wall surface of the second through hole 50B, a method of filling the second through hole 50B with a metal material, a composite material of metal and resin, etc. may also be used.

[0145] When the first resin filling portion 25A is provided inside the first through conductor 20A, the first resin filling portion 25A may be a conductor or an insulator. The material forming the first resin filling portion 25A may have a thermal expansion coefficient larger than, smaller than, or the same as that of the material (e.g., copper) forming the first through conductor 20A.

[0146] When the second resin filling portion 25B is provided inside the second through conductor 20B, the second resin filling portion 25B may be a conductor or an insulator. The material forming the second resin filling portion 25B may have a thermal expansion coefficient larger, smaller, or the same as that of the material (e.g., copper) forming the second through conductor 20B.

[0147] The sealing layer 30 is made of an insulating material, and in this case, the sealing layer 30 is preferably made of an insulating resin.

[0148] Examples of insulating resins that form the sealing layer 30 include epoxy resins and phenolic resins.

[0149] Preferably, the sealing layer 30 further contains a filler.

[0150] Examples of the filler contained in the sealing layer 30 include inorganic fillers such as silica particles and alumina particles.

[0151] The sealing layer 30 may be composed of only one layer, or may be composed of two or more layers. When the sealing layer 30 is composed of two or more layers, the materials constituting each layer may be the same or different.

[0152] Sealing layer 30 is formed so as to seal capacitor element 10 by, for example, a method of thermocompressing an insulating resin sheet, or a method of applying an insulating resin paste and then thermally curing it.

[0153] Between capacitor element 10 and sealing layer 30, for example, a stress relaxation layer, a moisture-proof film, or other layer may be provided.

[0154] The insulating layer 35 is made of an insulating material, and in this case, the insulating layer 35 is preferably made of an insulating resin.

[0155] Examples of insulating resins that can be used to form the insulating layer 35 include polyphenylsulfone resins, polyethersulfone resins, cyanate ester resins, fluororesins (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymers, etc.), polyimide resins, polyamideimide resins, epoxy resins, and derivatives or precursors thereof.

[0156] The insulating layer 35 may be made of the same resin as the sealing layer 30. Unlike the sealing layer 30, if the insulating layer 35 contains an inorganic filler, it may adversely affect the effective capacitance portion of the capacitor element 10. Therefore, the insulating layer 35 is preferably made of a resin alone.

[0157] The insulating layer 35 can be formed in a predetermined area by applying a mask material, such as a composition containing an insulating resin, to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.

[0158] The insulating layer 35 may be formed on the porous portion 11B either before or after the dielectric layer 13 is formed.

[0159] Examples of materials constituting the first conductor wiring layer 40A include metal materials containing low-resistance metals such as silver, gold, copper, etc. In this case, the first conductor wiring layer 40A is formed by, for example, plating the surface of the first through conductor 20A.

[0160] In order to improve the adhesion between the first conductor wiring layer 40A and other components, in this case, the adhesion between the first conductor wiring layer 40A and the first through conductor 20A, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and resin may be used as the constituent material of the first conductor wiring layer 40A.

[0161] Examples of materials constituting the second conductor wiring layer 40B include metal materials containing low-resistance metals such as silver, gold, copper, etc. In this case, the second conductor wiring layer 40B is formed by, for example, plating the surface of the second through conductor 20B.

[0162] In order to improve the adhesion between the second conductor wiring layer 40B and other members, in this case, the adhesion between the second conductor wiring layer 40B and the second through conductor 20B, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and resin may be used as the constituent material of the second conductor wiring layer 40B.

[0163] The constituent materials of the first conductor wiring layer 40A and the second conductor wiring layer 40B are preferably the same at least in terms of type, but may be different from each other.

[0164] Examples of materials that can be used to form the via conductors 45 include metal materials containing low-resistance metals such as silver, gold, and copper.

[0165] The via conductor 45 is formed, for example, by plating the inner wall surface of a through hole that penetrates the sealing layer 30 in the thickness direction with the above-mentioned metal material, or by filling it with a conductive paste and then performing a heat treatment.

[0166] The capacitor array of the present invention is not limited to the above-described embodiment, and various applications and modifications can be made within the scope of the present invention with respect to the configuration of the capacitor array, manufacturing conditions, and the like.

[0167] The capacitor array of the present invention can be suitably used as a constituent material of a composite electronic component. Such a composite electronic component includes, for example, the capacitor array of the present invention, external electrodes (e.g., a first conductor wiring layer and a second conductor wiring layer) provided outside the sealing layer of the capacitor array and electrically connected to the first electrode layer and the second electrode layer of the capacitor element, respectively, and an electronic component connected to the external electrodes.

[0168] In a composite electronic component, the electronic component connected to the external electrode may be a passive element or an active element. Both the passive element and the active element may be connected to the external electrode, or either the passive element or the active element may be connected to the external electrode. Also, a composite of a passive element and an active element may be connected to the external electrode.

[0169] Examples of passive elements include inductors, etc. Examples of active elements include memories, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), and PMICs (Power Management ICs).

[0170] The capacitor array of the present invention has a sheet-like shape as a whole. Therefore, in a composite electronic component, the capacitor array can be treated like a mounting substrate, and electronic components can be mounted on the capacitor array. Furthermore, by making the electronic components mounted on the capacitor array sheet-like, it is possible to connect the capacitor array and the electronic components in the thickness direction via through-hole conductors that penetrate each electronic component in the thickness direction. As a result, active elements and passive elements can be configured like a single module.

[0171] For example, a switching regulator can be formed by electrically connecting the capacitor array of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.

[0172] In a composite electronic component, a circuit layer may be formed on either side of a capacitor matrix sheet on which a plurality of capacitor arrays of the present invention are laid out, and the circuit layer may be connected to a passive element or an active element.

[0173] Alternatively, the capacitor array of the present invention may be placed in a cavity provided in a substrate, embedded in resin, and then a circuit layer may be formed on the resin. Another electronic component (passive or active element) may be mounted in another cavity of the same substrate.

[0174] Alternatively, the capacitor array of the present invention may be mounted on a smooth carrier such as a wafer or glass, an outer layer made of resin may be formed, a circuit layer may be formed, and then the array may be connected to passive or active elements.

[0175] The present specification discloses the following:

[0176] <1> A capacitor array including a plurality of capacitor units arranged in a planar direction, Each of the capacitor units includes a capacitor element, a first through conductor, and a second through conductor; the capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer; the first electrode layer and the second electrode layer face each other in a thickness direction perpendicular to the planar direction, with the dielectric layer interposed therebetween; the first through conductor is provided on at least an inner wall surface of a first through hole that penetrates the capacitor element in the thickness direction, and is electrically connected to the first electrode layer; the second through conductor is provided on at least an inner wall surface of a second through hole that penetrates the capacitor element in the thickness direction, and is electrically connected to the second electrode layer; In a plan view in the thickness direction of the capacitor array, the area of the capacitor unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are all equivalent among the capacitor units, In the capacitor unit, the area of the first through conductor in the first through hole is S TH1 , the area of the second through conductor in the second through hole is S TH2 When the total number of the capacitor units included in the capacitor array is N, the capacitance C per unit for the center distance p between the first through conductor and the second through conductor is calculated from a hypothetical unit that satisfies all of the following conditions 1 to 4: unit When the correlation of Condition 1: The total number of the virtual units included in the capacitor array is n. Condition 2: In a plan view of the capacitor array in the thickness direction, the area of the virtual unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equivalent among the virtual units. Condition 3: The area of the first through conductor in the first through hole of the virtual unit is s th1 , the area of the second through conductor in the second through hole is s th2 That is, Condition 4: (s th1 +s th2 )×n is (S TH1 +S TH2 ) × N, The capacitance C per unit unit The total number n of the virtual units corresponding to the center distance p when the value of is maximum is expressed as the capacitance C per unit. unit A capacitor array in which the actual overall capacitance, which corresponds to the capacitance of the total area of the capacitor units out of the capacitance of the entire capacitor array, is larger than the virtual overall capacitance obtained by multiplying the maximum value of

[0177] <2> the capacitor unit includes a first unit and a second unit adjacent to the first unit; a center-to-center distance between the first through conductor of the first unit and the second through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the first unit and the second through conductor of the second unit in a plan view in the thickness direction of the capacitor array; <1> The capacitor array according to claim 1.

[0178] <3> the capacitor unit further includes a third unit adjacent to the first unit; a center-to-center distance between the second through conductor of the first unit and the second through conductor of the second unit is equal to a center-to-center distance between the second through conductor of the first unit and the second through conductor of the third unit in a plan view in the thickness direction of the capacitor array; <2> The capacitor array according to claim 1.

[0179] <4> In a plan view from the thickness direction of the capacitor array, the second through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the second through conductor of the first unit and the center of the second through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the second through conductor of the first unit. <3> The capacitor array according to claim 1.

[0180] <5> the capacitor unit further includes a fourth unit adjacent to the first unit; a center-to-center distance between the second through conductor of the second unit and the second through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the second unit and the second through conductor of the fourth unit in a plan view in the thickness direction of the capacitor array; <3> or <4> The capacitor array according to claim 1.

[0181] <6> a center-to-center distance between the second through conductor of the first unit and the first through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the first unit and the first through conductor of the second unit in a plan view in the thickness direction of the capacitor array; <2> ~ <5> 10. The capacitor array according to claim 9, wherein:

[0182] <7> the capacitor unit further includes a third unit adjacent to the first unit; a center-to-center distance between the first through conductor of the first unit and the first through conductor of the second unit is equal to a center-to-center distance between the first through conductor of the first unit and the first through conductor of the third unit in a plan view in the thickness direction of the capacitor array; <6> The capacitor array according to claim 1.

[0183] <8> In a plan view from the thickness direction of the capacitor array, the first through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit and the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor of the first unit. <7> The capacitor array according to claim 1.

[0184] <9> the capacitor unit further includes a fourth unit adjacent to the first unit; a center-to-center distance between the first through conductor of the second unit and the first through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the second unit and the first through conductor of the fourth unit in a plan view in the thickness direction of the capacitor array; <7> or <8> The capacitor array according to claim 1.

[0185] <10> the capacitor unit includes a first unit and a second unit adjacent to the first unit; a center-to-center distance between the second through conductor of the first unit and the first through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the first unit and the first through conductor of the second unit in a plan view in the thickness direction of the capacitor array; <1> The capacitor array according to claim 1.

[0186] <11> the capacitor unit further includes a third unit adjacent to the first unit; a center-to-center distance between the first through conductor of the first unit and the first through conductor of the second unit is equal to a center-to-center distance between the first through conductor of the first unit and the first through conductor of the third unit in a plan view in the thickness direction of the capacitor array; <10> The capacitor array according to claim 1.

[0187] <12> In a plan view from the thickness direction of the capacitor array, the first through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit and the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor of the first unit. <11> The capacitor array according to claim 1.

[0188] <13> the capacitor unit further includes a fourth unit adjacent to the first unit; a center-to-center distance between the first through conductor of the second unit and the first through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the second unit and the first through conductor of the fourth unit in a plan view in the thickness direction of the capacitor array; <11> or <12> The capacitor array according to claim 1.

[0189] <14> When the center-to-center distance between the first through conductor and the second through conductor is P in a plan view in the thickness direction of the capacitor array, the area of the capacitor unit is expressed as 2P×√3 / 2×P. <1> ~ <13> 10. The capacitor array according to claim 9, wherein:

[0190] <15> When viewed from above in the thickness direction of the capacitor array, when the center-to-center distance between the first through conductor and the second through conductor is P, the area of the capacitor unit is expressed as 2P×P. <1> ~ <13> 10. The capacitor array according to claim 9, wherein:

[0191] <16> In the same capacitor unit, the diameter of the first through hole is equal to the diameter of the second through hole. <1> ~ <15> 10. The capacitor array according to claim 9, wherein:

[0192] <17> In the same capacitor unit, the area of the first through conductor in the first through hole is equal to the area of the second through conductor in the second through hole. <1> ~ <16> 10. The capacitor array according to claim 9, wherein:

[0193] <18> the first electrode layer is an anode plate having a core made of metal and a porous portion provided on at least one main surface of the core; the dielectric layer is provided on a surface of the porous portion, The second electrode layer is a cathode layer provided on the surface of the dielectric layer. <1> ~ <17> 10. The capacitor array according to claim 9, wherein:

[0194] <19> the first through conductor is electrically connected to the anode plate on an inner wall surface of the first through hole; <18> The capacitor array according to claim 1.

[0195] <20> the cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer; <18> or <19> The capacitor array according to claim 1. [Explanation of symbols]

[0196] 1, 1A, 1B Capacitor Array 1U capacitor unit 1UA 1st Unit 1UB 2nd Unit 1UC 3rd Unit 1UD 4th Unit 10 Capacitor element 11 Anode plate (first electrode layer) 11A core 11B Porous part 12 Cathode layer (second electrode layer) 12A solid electrolyte layer 12B Conductive layer 13 Dielectric layer 20A First through conductor 20B Second through conductor 25A 1st resin filling section 25B 2nd resin filling section 30 Sealing layer 35 Insulating layer 40A First conductor wiring layer 40B Second conductor wiring layer 45 via conductor 50A 1st through hole 50B 2nd through hole D TH1 First through hole diameter D TH2 Second through hole diameter P: Center distance between the first and second through conductors

Claims

1. A capacitor array including a plurality of capacitor units arranged in a planar direction, Each of the capacitor units includes a capacitor element, a first through conductor, and a second through conductor; the capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer; the first electrode layer and the second electrode layer face each other in a thickness direction perpendicular to the planar direction, with the dielectric layer interposed therebetween; the first through conductor is provided on at least an inner wall surface of a first through hole that penetrates the capacitor element in the thickness direction, and is electrically connected to the first electrode layer; the second through conductor is provided on at least an inner wall surface of a second through hole that penetrates the capacitor element in the thickness direction, and is electrically connected to the second electrode layer; In a plan view in the thickness direction of the capacitor array, the area of the capacitor unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are all equivalent among the capacitor units, The area of the first through conductor in the first through hole of the capacitor unit is S ＴＨ１ , the area of the second through conductor in the second through hole is S ＴＨ２ When the total number of the capacitor units included in the capacitor array is N, the capacitance C per unit for the center-to-center distance p between the first through conductor and the second through conductor is calculated from a hypothetical unit that satisfies all of the following conditions 1 to 4: ｕｎｉｔ When the correlation of Condition 1: The total number of the virtual units included in the capacitor array is n. Condition 2: In a plan view of the capacitor array in the thickness direction, the area of the imaginary unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equivalent among the imaginary units. Condition 3: The area of the first through conductor in the first through hole of the virtual unit is s ｔｈ１ , the area of the second through conductor in the second through hole is s ｔｈ２ That is, Condition 4: (s ｔｈ１ +s ｔｈ２ ) × n is (S ＴＨ１ +S ＴＨ２ ) × N, The capacitance C per unit ｕｎｉｔ The total number n of the virtual units corresponding to the center distance p when the value of is maximum is expressed as the capacitance C per unit. ｕｎｉｔ A capacitor array in which the effective overall capacitance, which corresponds to the capacitance of the total area of the capacitor units out of the capacitance of the entire capacitor array, is larger than the virtual overall capacitance obtained by multiplying the maximum value of

2. the capacitor unit includes a first unit and a second unit adjacent to the first unit; 2. The capacitor array of claim 1, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first through conductor of the first unit and the second through conductor of the first unit is equal to the center-to-center distance between the first through conductor of the first unit and the second through conductor of the second unit.

3. the capacitor unit further includes a third unit adjacent to the first unit; 3. The capacitor array of claim 2, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the second through conductor of the first unit and the second through conductor of the second unit is equal to the center-to-center distance between the second through conductor of the first unit and the second through conductor of the third unit.

4. 4. The capacitor array of claim 3, wherein, when viewed in a plane from the thickness direction of the capacitor array, the second through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the second through conductor of the first unit and the center of the second through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the second through conductor of the first unit.

5. the capacitor unit further includes a fourth unit adjacent to the first unit; 5. The capacitor array of claim 3, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the second through conductor of the second unit and the second through conductor of the first unit is equal to the center-to-center distance between the second through conductor of the second unit and the second through conductor of the fourth unit.

6. A capacitor array as described in any one of claims 2 to 4, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the second through conductor of the first unit and the first through conductor of the first unit is equal to the center-to-center distance between the second through conductor of the first unit and the first through conductor of the second unit.

7. the capacitor unit further includes a third unit adjacent to the first unit; 7. The capacitor array of claim 6, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first through conductor of the first unit and the first through conductor of the second unit is equal to the center-to-center distance between the first through conductor of the first unit and the first through conductor of the third unit.

8. 8. The capacitor array of claim 7, wherein, when viewed in a plane from the thickness direction of the capacitor array, the first through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit and the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor of the first unit.

9. the capacitor unit further includes a fourth unit adjacent to the first unit; 8. The capacitor array of claim 7, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first through conductor of the second unit and the first through conductor of the first unit is equal to the center-to-center distance between the first through conductor of the second unit and the first through conductor of the fourth unit.

10. the capacitor unit includes a first unit and a second unit adjacent to the first unit; 2. The capacitor array of claim 1, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the second through conductor of the first unit and the first through conductor of the first unit is equal to the center-to-center distance between the second through conductor of the first unit and the first through conductor of the second unit.

11. the capacitor unit further includes a third unit adjacent to the first unit; 11. The capacitor array of claim 10, wherein, in a planar view of the capacitor array in the thickness direction, the center-to-center distance between the first through conductor of the first unit and the first through conductor of the second unit is equal to the center-to-center distance between the first through conductor of the first unit and the first through conductor of the third unit.

12. 12. The capacitor array of claim 11, wherein, when viewed in a plane from the thickness direction of the capacitor array, the first through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit and the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor of the first unit.

13. the capacitor unit further includes a fourth unit adjacent to the first unit; 13. The capacitor array of claim 11, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first through conductor of the second unit and the first through conductor of the first unit is equal to the center-to-center distance between the first through conductor of the second unit and the first through conductor of the fourth unit.

14. A capacitor array according to any one of claims 1 to 4 and 10 to 12, wherein when viewed in a plane from the thickness direction of the capacitor array, when the center-to-center distance between the first through conductor and the second through conductor is P, the area of the capacitor unit is expressed as 2P x √3 / 2 x P.

15. A capacitor array according to any one of claims 1 to 4 and 10 to 12, wherein when viewed in a plane from the thickness direction of the capacitor array, the area of the capacitor unit is expressed as 2P x P when the center-to-center distance between the first through conductor and the second through conductor is P.

16. 13. The capacitor array according to claim 1, wherein the diameter of the first through hole is equal to the diameter of the second through hole in the same capacitor unit.

17. A capacitor array according to any one of claims 1 to 4 and 10 to 12, wherein in the same capacitor unit, the area of the first through conductor in the first through hole is equal to the area of the second through conductor in the second through hole.

18. the first electrode layer is an anode plate having a core made of metal and a porous portion provided on at least one main surface of the core, the dielectric layer is provided on a surface of the porous portion, 13. The capacitor array according to claim 1, wherein the second electrode layer is a cathode layer provided on the surface of the dielectric layer.

19. The capacitor array according to claim 18 , wherein the first through conductor is electrically connected to the anode plate at an inner wall surface of the first through hole.

20. 20. The capacitor array of claim 18, wherein the cathode layer comprises a solid electrolyte layer disposed on a surface of the dielectric layer.

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