How to inspect wiring

Abstract

To solve the problem in which when a short circuit part is high in resistance, a hot spot does not occur by heating due to an applied electric current, and the short circuit part cannot be detected.SOLUTION: A probe 207 is electrically connected to a terminal electrode 208 of wiring 209 of a circuit substrate 210, and a lock-in signal 206 is applied to the wiring 209. When a short circuit part 211 is a complete short circuit, a hot spot of the short circuit part 211 does not occur, but an infrared ray is generated from the wiring 209 to which the lock-in signal 206 is applied, an observation region 216 including the short circuit part 211 is identified, and an infrared image can be acquired. In the observation region 216, a layer structure of the circuit substrate 210 and cross section structure thereof are measured with an ultrasonic microscope to acquire a structure image. By performing image processing to the infrared image and structure image, the short circuit part 211 can be identified.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an inspection device, an evaluation device, an inspection method, and an evaluation method for detecting short circuits, defective parts, temperature change parts, etc., evaluating defective states, inspecting wiring, element short circuits, defects in connection parts such as contact holes, and identifying the location of defects in wiring on printed wiring boards, flexible boards, semiconductor circuit chips, etc. [Background technology]

[0002] There is a strong trend towards making electronic products lighter, thinner, shorter and smaller in order to reduce their size and volume. The printed wiring boards used in electronic products have circuits and wires arranged closely together, and due to space requirements, the printed wiring boards are configured with multiple layers.

[0003] As the packaging density of printed wiring boards increases, the wiring becomes thinner and the spacing between the wires becomes shorter, which leads to a large number of defects such as short circuits between adjacent wires, contact between electronic components, and short circuits caused by foreign matter. The above phenomenon occurs not only in printed wiring boards, but also in multilayer flexible boards, semiconductor chips such as ICs, hybrid boards, home appliances (components), etc.

[0004] Devices (equipment) made of thin films, such as liquid crystal displays (LCDs), can develop defects such as short circuits or breaks in the contact holes of the thin films formed inside. Also, in components such as MEMS (Micro Electro Mechanical Systems), defects can occur in the electrical circuits and fine mechanical structures. These devices and parts have elements and wiring formed with high precision and high density, making it difficult to detect, discover, and identify defective parts and defects. It is necessary to inspect printed wiring boards and the like to detect and repair defective parts, but as wiring and the like becomes denser, it is becoming more difficult to detect defects and identify their locations. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2016-534347

[0006] Patent Document 1 describes a method in which a lock-in temperature device generates heat in a short-circuited portion of wiring or the like on a circuit board, and identifies the short-circuited portion based on the position of a hot spot caused by the heat. Summary of the Invention [Problem to be solved by the invention]

[0007] In the method of Patent Document 1, if the short-circuited part has high resistance, a hot spot occurs due to heat generated by the applied current, and the short-circuited part can be detected. However, if the short-circuited part has the same resistance value as the wiring (complete short circuit, etc.) and the applied current generates little or no heat, no hot spot occurs, and the short-circuited part cannot be detected, which is a problem. In devices (components), the defective state of a defective part changes depending on the signal applied, which makes it difficult to detect the defective part. [Means for solving the problem]

[0008] A probe 207 or the like is electrically connected to terminal electrodes 208 or the like of wiring 209 of a circuit board 210, and a lock-in signal 206 is applied to the wiring 209 to detect a short circuit 211. If the short circuit 211 cannot be identified because the heat generated by the short circuit 211 is small, for example, the lock-in signal 206 is applied from multiple terminal electrodes 208 to the wiring 209 to identify an observation region 216 that includes the short circuit 211. In addition, an image of the pattern of the wiring 209 of the circuit board 210 is taken using X-ray light 217, and the portion (observation region 216) that includes the short circuit 211 is identified.

[0009] If the wiring 209 is an inner layer of the circuit board 210 or the like, and an insulator is formed on the wiring 209, the components on the inner layer are removed using laser light 214, or heated by irradiation with laser light 214 or infrared rays, and an electrical connection is made to the wiring 209. While moving the connection position with the wiring 209, the resistance value between the connection position and the terminal position, or the voltage value at the connection position relative to the terminal position, is measured, and the portion including the short-circuited portion 211 is identified. Next, the portion including the short-circuited portion 211 is observed with an ultrasonic microscope 2, and the short-circuited portion 211 is identified.

[0010] A probe 207 is pressure-welded to and connected to a terminal electrode 208 of a wiring 209 of a circuit board 210, and a lock-in signal 206 is applied to the wiring 209. If the short-circuited portion 211 is a complete short-circuit, no hot spot of the short-circuited portion 211 occurs, but infrared rays are emitted from the wiring 209 to which the lock-in signal 206 is applied, making it possible to identify an observation region 216 including the short-circuited portion 211. In addition, an infrared image of the wiring 209, short-circuited portion 211, etc. can be acquired. A structural image of the observation region 216 is acquired by measuring the layer configuration and cross-sectional structure of the circuit board 210 with an ultrasonic microscope 2. The short-circuited portion 211 can be identified by image processing the infrared image and the structural image. [Effects of the Invention]

[0011] In the present invention, even when the heat generated by the short circuit portion 211 is small or the short circuit portion 211 cannot be identified, the position of the short circuit portion 211 can be reliably identified or detected by identifying an observation region 216 including the short circuit portion 211 by applying a lock-in signal 206 or the like, and observing or measuring the observation region 216 with an ultrasonic microscope 2 or the like.

[0012] Furthermore, since the temperature change of a defective or faulty part of the equipment (component) is detected in synchronization with the signal output by the equipment (component), the location of the defective or faulty part can be reliably identified or detected. [Brief explanation of the drawings]

[0013] [Figure 1]1 is an explanatory diagram of an inspection device and an evaluation device according to an embodiment of the present invention. [Figure 2] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 3] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 4] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 5] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 6] 1 is an explanatory diagram of an inspection device and an evaluation device according to an embodiment of the present invention. [Figure 7] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 8] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 9] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 10] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 11] FIG. 1 is a block diagram of an inspection device and an evaluation device according to an embodiment of the present invention. [Figure 12] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 13] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 14] FIG. 1 is a flowchart of an inspection method and an evaluation method according to an embodiment of the present invention. [Figure 15] FIG. 1 is a flowchart of an inspection method and an evaluation method according to an embodiment of the present invention. [Figure 16] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 17] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 18] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 19]1 is an explanatory diagram of an inspection device and an evaluation device according to an embodiment of the present invention. [Figure 20] 1 is an explanatory diagram of an inspection device and an evaluation device according to an embodiment of the present invention. [Figure 21] 1 is an explanatory diagram of an inspection device and an evaluation device according to an embodiment of the present invention. [Figure 22] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 23] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. [Figure 24] 1A to 1C are explanatory diagrams of an inspection method and an evaluation method in an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0014] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the drawings showing embodiments thereof. Note that for ease of explanation or illustration, some details may be omitted or simplified.

[0015] In the embodiments of the present invention, a circuit board 210 such as a printed wiring board is used as an example of a substrate on which wiring is formed, but the present invention is not limited to this. For example, the present invention can be applied to a flexible substrate on which single-layer or multi-layer wiring is formed, a wiring pattern substrate or film made of multiple metal layers, thin films, plating films, carbon-containing alloys, organic conductive films, etc., a ceramic substrate on which wiring and electrodes are formed, a semiconductor IC on which a fine wiring pattern is formed on metal, etc., an electrode of an electronic component, etc.

[0016] Furthermore, the subject of inspection and evaluation of the present invention is not limited to wiring boards, etc. For example, as described in the examples of the present invention, the present invention can be applied or utilized to inspect and evaluate devices (components) on which thin films are formed, such as liquid crystal displays (LCDs), and devices (components) having mechanically movable or changing parts, such as MEMS.

[0017] The present invention relates to an inspection device, an inspection method, a detection method, an evaluation method, a measurement method, a temperature, a rate of temperature change, a degree of heating, and an evaluation device, a measurement device, a data accumulation method, etc., for detecting short circuits, disconnections, defective parts, etc. in equipment (components) or boards, evaluating defective states, and inspecting wiring.

[0018] 1 is an explanatory diagram of the inspection device of the present invention. In the present invention, a periodic lock-in signal 206 is applied to a wiring 209 or the like to be inspected, and infrared rays 202 emitted from the wiring 209 or the like to be inspected are captured by an infrared camera 201 in synchronization with the lock-in signal 206. An infrared image captured by the infrared camera 201 is subjected to image processing or visual judgment to detect or judge a short circuit 211 occurring in wiring or the like.

[0019] The lock-in signal 206 is a current I signal that is periodically turned on and off. The period is tc, and the duration during which the current flows is t2. Note that the lock-in signal 206 may also be a voltage V signal.

[0020] In this specification, a device that controls heat generation in short-circuited part 211 using lock-in signal 206 and detects, inspects, evaluates, or determines the state of defects in short-circuited part 211 from temperature information acquired from infrared camera 201 or the like, or evaluates a specific part including short-circuited part 211, is called a lock-in temperature device. Alternatively, a device that evaluates a specific part including charge / discharge part (temperature change part) 301 is called a lock-in temperature device.

[0021] In addition, in this specification, a device that observes or measures the heat generation or non-heat generation state of the short circuit part 211, charge / discharge part (temperature change part) 391, disconnected part, or cut part using the synchronization signal (lock-in signal) 206 output by the equipment (component), and detects or identifies, inspects, or evaluates the short circuit part 211, disconnected part, or charge / discharge part, etc. from temperature information obtained from the infrared camera 201, etc., or determines the state or degree of defects, etc., or evaluates specific points including the short circuit part 211 and charge / discharge part (temperature change part) 301, is called a lock-in temperature device or lock-in temperature evaluation device.

[0022] The present invention relates to a lock-in temperature device, and also to an inspection (evaluation) device or inspection (evaluation) system that is configured by combining one or more devices such as a lock-in temperature device, an X-ray imaging device, an ultrasonic imaging device, a laser processing device, or a pixel processing device. It also relates to an inspection method that uses or applies these. Inspection includes concepts and technical ideas such as detection, evaluation, measurement, observation, analysis, and interpretation.

[0023] The control device 203 applies a control signal 205a to the excitation signal source 204. The excitation signal source 204 is a power supply device that outputs a pulsed current I or a pulsed voltage V. For ease of explanation, the following description will be given assuming that excitation signal source 204 outputs a pulsed current I. In the case of a voltage, current I can be replaced with current V.

[0024] The pulsed current I is output in synchronization with the control signal 205a and applied to the probe 207. The period Tc of the lock-in signal 206 is the same as that of the control signal 205a, but the I period t2 of the lock-in signal 206 relative to the H period t1 of the control signal 205a can be varied or adjusted (phase adjustment). By adjusting the phase, it is possible to obtain the most sensitive temperature distribution and high temperature accuracy.

[0025] The magnitude of the current I or the magnitude of the voltage, as well as the amplitude of the synchronization signal, can also be varied and adjusted. Furthermore, the current I, etc., is not limited to being a steady value during the period t2, but can be varied linearly. For example, the current I can be a triangular wave, sine wave, sawtooth wave, or trapezoidal wave. By forming peaks in the current waveform, etc., it is possible to obtain a temperature distribution with high sensitivity and high temperature accuracy. Furthermore, the frequency of the current waveform, etc., can be varied.

[0026] Infrared camera 201 synchronizes with lock-in signal 206 and measures, evaluates, measures, and detects infrared rays 202 generated in short-circuit section 211, charge / discharge section 301, etc. Infrared camera 201 has a function to adjust the phase relationship with lock-in signal 206 so as to maximize sensitivity. The period of the lock-in signal 206 is varied to adjust the amount of infrared rays 202 generated appropriately so that the infrared camera 201 can detect the short-circuit point 211 .

[0027] In response to the control signal 205b, the infrared camera 201 captures the infrared light 202. The capture period of the infrared light 202 is the period t3 of the control signal 205b. The period of the lock-in signal 206 and the control signal 205b is tc, but the phase relationship between the lock-in signal 206 and the control signal 205b can be changed or adjusted.

[0028] The infrared camera 201 responds to the lock-in signal (periodic signal) 206a to acquire temperature information, achieving high temperature sensitivity. It does not respond to steady heat generation that is not synchronized with the lock-in signal 206a, or the sensitivity of the response can be reduced.

[0029] Infrared camera 201 captures infrared rays 202 in synchronization with control signal 205b, which is synchronized with lock-in signal 206a, and transfers the captured data Dt to control device 203. The inspection device of the present invention has a function of adjusting the phases of control signal 205a and control signal 205b.

[0030] The infrared camera 201 has inside it CCDs arranged in a matrix to detect infrared rays. The CCDs are corrected so that they produce the same output at a given intensity of infrared rays 202. If necessary, a moving stage is provided so that the infrared camera 201 can move in the XY direction. Alternatively, the circuit board 210 is mounted on a moving stage so that it can be moved.

[0031] Probe 207 is brought into contact with terminal electrode 208 of wiring 209, and lock-in signal 206 is applied to wiring 209 to be inspected via probe 207. Lock-in signal 206 is a pulsed current I, and in synchronization with lock-in signal 206, infrared light generated by wiring 209 and the like is captured two-dimensionally by infrared camera 201.

[0032] The probe 207 changes the position of the terminals (terminal electrode 208 a , terminal electrode 208 b , terminal electrode 208 c , terminal electrode 208 d ) to be connected, and the infrared ray 202 is taken in by the infrared camera 201 at the connection position of each probe 207 .

[0033] 1 illustrates a state in which two probes 207 are connected to the terminal electrodes 208, the present invention is not limited to this, and it goes without saying that three or more probes 207 may be electrically connected to three or more terminal electrodes 208, and the data Dt may be acquired by the infrared camera 201. Of the three or more probes 207, one probe 207 or multiple probes are selected or switched for control. It goes without saying that the connection is not limited to the probe 207, and selection or connection may be made using an electrical element such as a connector, switch, or relay.

[0034] In a circuit board 210 on which multiple layers of wiring are formed, wiring 209 is buried at different depths from the lower layer to the upper layer. To identify the location of a heat generating point (hot spot) occurring at a short circuit 211, a multi-frequency lock-in signal 206 is applied to the electrical circuit (wiring, etc.) of the circuit board in order to excite the hot spot.

[0035] While applying a lock-in signal 206 to the electrical circuit, an IR image correlating with the heat propagation from the hot spot is obtained by capturing an image of the top surface of the wiring with an infrared camera 201 in synchronization with the lock-in signal 206. The IR image is created from data Dt.

[0036] The short circuit 211 is detected and inspected by detecting a thermal response signal from the IR image at periodic intervals and identifying the occurrence of a hot spot image on the top surface of the circuit board 210 and changes in the hot spot image in response to the frequency of the thermal response signal.

[0037] The detection of the short circuit 211 is performed by changing the magnitude of the current I of the lock-in signal 206, the period Tc, and the period t2 during which the current I is applied. The infrared camera 201 measures or acquires the infrared rays 202 emitted from the wiring 209 at the timing of the control signal 205b synchronized with the lock-in signal 206.

[0038] The detection of the short circuit 211 and the charge / discharge unit 301 can be achieved by varying the frequency of the lock-in signal 206. The higher the frequency, the more the exothermic reaction can be narrowed down. However, if the frequency is increased, the amount of infrared radiation over time becomes uniform (flat), making it difficult to detect the exothermic phenomenon. Although the amount of infrared radiation 202 generated decreases, lowering the frequency and shortening the on-time t2 makes it easier to identify the position of the short circuit 211. The short circuit 211 can be detected by adjusting the frequency and on-time t2 and adjusting the timing at which the infrared camera 201 captures the infrared radiation 202.

[0039] 2, 3, and 4 are explanatory diagrams of a method for detecting a short circuit 211 according to the present invention. In Figures 2, 3, 4, etc., the wiring 209, short circuit 211, and terminal electrode 208 are shown schematically to facilitate explanation. Terminal electrodes 208 are formed or arranged on both ends of the wiring 209. 2, it is assumed that a short circuit 211 occurs between wiring 209a and wiring 209b, but no short circuit 211 occurs in wiring 209c.

[0040] By connecting probe 207 to terminal electrode 208a, terminal electrode 208c, etc. and applying lock-in signal 206, a current flows through short-circuited portion 211. If short-circuited portion 211 has a high resistance, short-circuited portion 211 generates heat, and infrared rays 202 generated by the heat are captured by infrared camera 201 and subjected to image processing, thereby making it possible to detect short-circuited portion 211.

[0041] If short-circuited portion 211 is a complete short circuit and has no resistance, probe 207 is connected to terminal electrodes 208a and 208c, etc., and lock-in signal 206 is applied, causing current to flow through short-circuited portion 211 and no heat to be generated. In this case, as shown in Figure 3, the entire wiring 209 heats up uniformly, making it impossible to detect short-circuited portion 211. This is thought to be because the amount of heat generated by short-circuited portion 211 and the amount of heat generated by wiring 209 are similar. FIG. 3 is a schematic diagram showing the heat generation state of the wiring 209 when the short-circuited portion 211 is a short-circuit with a low resistance value (complete short-circuit).

[0042] As shown in FIG. 3, even if the probe 207 is pressed against any of the terminal electrodes 208, terminal electrode 208a, terminal electrode 208b, terminal electrode 208c, and terminal electrode 208d, and the lock-in signal 206 is applied, the short-circuited portion 211 does not generate heat. Therefore, it is only observed that the infrared rays 202 are being emitted from the entire wiring 209a and wiring 209b, and the short-circuited portion 211 cannot be detected. Even if the current I of the lock-in signal 206 is increased, the amount of infrared radiation 202 emitted from the entire wiring 209 increases, and the short-circuited portion 211 cannot be identified.

[0043] Therefore, the data Dt captured by the infrared camera 201 only detects that there is no short circuit in the wiring 209c, and that there is a defective portion such as a short circuit 211 near the wiring 209a and wiring 209b.

[0044] 4 illustrates that wiring 209a is a surface wiring pattern and wiring 209b is an inner layer wiring pattern. A short circuit 211 occurs between the surface wiring pattern 209a and the inner layer wiring pattern of wiring 209b.

[0045] 5A and 5B are diagrams showing an example of the pattern of wiring 209 on a circuit board 210. Fig. 5A shows the pattern of wiring 209 on the first layer on the surface of the circuit board 210, and Fig. 5B shows the pattern of wiring 209 on the second layer, which is an inner layer of the circuit board 210. A short circuit 211a occurs in the wiring 209a, a short circuit 211b occurs in the wiring 209b, and a short circuit 211c occurs in the wiring 209c. The terminal electrodes with which the probe 207 is brought into contact are designated c1 to c3 and d1 to d3, and the lock-in signal 206 is applied to these electrodes to detect the short-circuit portion 211.

[0046] 5, wiring 209 of actual circuit board 210 is thin and has a relatively high resistance. Therefore, if the resistance of short-circuited portion 211 is low, only infrared light from wiring 209 will be detected, and the position of short-circuited portion 211 will not be able to be identified.

[0047] If the short circuit 211 generates heat to the same extent as the wiring 209, the location of the short circuit 211 can be identified by applying a lock-in signal 206 to the wiring 209, capturing an infrared image of the wiring 209, obtaining the wiring pattern of the circuit board 210 as shown in Fig. 5, and overlaying the infrared image and the wiring pattern of the circuit board 210 at the same scale. This is because the short circuit 211 radiates infrared rays just like the wiring 209.

[0048] When a layout diagram of the wiring 209 of the circuit board 210 can be obtained as shown in FIG. 5, the position of the short circuit 211 can be identified by the infrared image and the wiring layout diagram of the circuit board 210 using the method described above.

[0049] The image of the wiring layout drawing and the infrared image are matched in scale using image processing, etc., and differences are detected by image processing or visually. In the infrared image, short-circuited areas emit infrared rays similar to those of the wiring 209, as shown in Figure 3, making it possible to detect short-circuited areas that emit infrared rays that are not present in the wiring layout drawing.

[0050] As described above, the present invention is characterized by detecting, evaluating, or measuring the position of the short-circuit part 211 and the charge / discharge part 301 by comparing and referring to the wiring layout drawing and the infrared radiation generation distribution acquired by the infrared camera 201.

[0051] As described above, the present invention can detect or locate the short circuit 211 using the inspection device of the present invention that uses the lock-in signal 206, even if the short circuit 211 has a low resistance value or is a complete short circuit. If a wiring layout drawing of the circuit board 210 is not available, the wiring pattern of the circuit board 210 is obtained using an X-ray device shown in FIG.

[0052] 6 is an explanatory diagram of an X-ray device for acquiring wiring 209 of circuit board 210. As shown in FIG. 6, an X-ray imaging device 218 is provided which irradiates X-ray light 217a onto circuit board 210 and captures an image of transmitted X-rays through circuit board 210.

[0053] A positioning device 219 is provided to move the circuit board 210 parallel to the flat X-ray imaging device 218, and the positioning device 219 positions the X-ray imaging device 218 at a predetermined position.

[0054] 6, the X-ray inspection apparatus includes an X-ray irradiation device 220 that irradiates a cone beam of X-ray light 217. The X-ray light 217 passes through a circuit board 210 and enters an X-ray imaging device 218. The X-ray light 217 is converted into an X-ray transmission image by the X-ray imaging device 218. The intensity of the X-ray light 217 can be varied. Also, the range of the X-rays to be irradiated can be set with the short-circuit part 211 as the center.

[0055] The X-ray image captures the wiring 209 and the short circuit 211. However, the wiring 209 on the surface layer and the wiring 209 on the inner layer are photographed overlapping each other, as shown in Figure 5. Since the purpose is to detect the short circuit 211, there is no problem even if the wiring 209 on the surface layer and the wiring 209 on the inner layer are overlapping each other. The position of short circuit portion 211 can be identified using the obtained X-ray transmission image and the infrared image obtained in FIG.

[0056] The short circuit portion 211 is often made of a material that is different from the material that forms the wiring 209, such as a solder material. Therefore, the X-ray transmittance of the short circuit portion 211 is different from that of the wiring 209. Therefore, in an X-ray transmission image, the short circuit portion 211 and the wiring 209 have different image shadings. However, the difference in the degree of shading is often small, and it is difficult to determine the short circuit portion 211 based on the X-ray transmission image alone.

[0057] The X-ray image and the infrared image are matched in scale by image processing or the like, and differences are detected by image processing or visually. In the infrared image, short-circuited parts emit infrared rays similar to those of the wiring 209, as shown in Figure 3, and short-circuited parts that emit infrared rays not found in the X-ray image can be detected.

[0058] As described above, when the short-circuited portion 211 has a low resistance value or is a complete short-circuit, the short-circuited portion 211 can be detected or its position identified using the inspection device of the present invention that uses the lock-in signal 206.

[0059] As described above, the present invention can identify the position of the short circuit 211 by using the lock-in signal 206, the X-ray image and the infrared image, and the layout diagram of the wiring pattern.

[0060] In an X-ray transmission image, if the short-circuit portion 211 is made of aluminum, carbon, or the like, which has a small atomic weight, it is not captured as an X-ray transmission image. In such cases, it may be difficult to identify the short-circuit portion 211. In particular, as shown in FIG. 4, if the wiring 209b is formed in an inner layer, the wiring 209b is difficult to detect, and the short-circuit portion 211 is not visible.

[0061] As explained in Fig. 1, even if short-circuit portion 211 is a complete short, the present invention can detect the occurrence of short-circuit portion 211 in wiring 209a and wiring 209b as shown in Fig. 3 by applying lock-in signal 206 to terminal electrode 208. However, as shown in Fig. 5, wiring 209 is long, and the area determined to include short-circuit portion 211 as shown in Fig. 3 is large. Therefore, it may be difficult to identify the location of short-circuit portion 211.

[0062] In the inspection method for the short circuit portion 211 of the present invention, as shown in Figures 7 and 8, processing is performed on the wiring 209b using a laser device 212 or the like, the area including the short circuit portion 211 is narrowed down, and the short circuit portion 211 is identified using an ultrasonic microscope described in Figure 12 etc.

[0063] 7 and 8 are explanatory diagrams illustrating processing of the upper layer of wiring 209 with laser device 212. Fig. 8 is an explanatory diagram of the inspection method of the present invention, illustrating that laser-processed portion 215 is formed with laser device 212 and probe 207 is pressed against point p of laser-processed portion 215.

[0064] The upper layer of the wiring 209b is processed by a laser beam 214 generated by a femtosecond laser processing device 212. The processed state can be easily achieved by changing or setting the laser intensity of the femtosecond laser beam 214 and the moving speed of the irradiated laser pulse.

[0065] The femtosecond laser processing device 212 generates femtosecond laser light 214, which generally has a pulse width of subpicoseconds to tens of femtoseconds. When the ultrashort pulse laser light 214 of subpicoseconds to tens of femtoseconds is irradiated onto a material, the pulse width is sufficiently short compared to the thermal diffusion time of the material, so that light energy can be effectively input to the irradiated area.

[0066] As a result, it is possible to localize the thermal effects to the periphery of the irradiation, enabling high-precision micromachining. In addition, because the electric field strength of the laser light is very high, it is possible to induce nonlinear effects such as multiphoton absorption and multiphoton ionization in a spatially selective manner only in the area where the beam is focused.

[0067] Short-circuited parts, defective parts, etc. often have a different absorption rate of laser light compared to other normal parts. Therefore, by irradiating a part suspected to be a short-circuited part or a part near the short-circuited part or a defective part with laser light, the short-circuited part or defective part will have a different temperature or temperature distribution compared to normal parts. Temperature information of this temperature or temperature distribution is acquired by the infrared camera 201.

[0068] The above matters are not limited to laser light. When searching for short circuits or defects, infrared light is irradiated over a relatively wide area to heat the wiring, etc., and at the same time, a lock-in signal 206 is applied or synchronized with an output signal from the device (component), and temperature information is acquired by the infrared camera 201. For ease of explanation, the following description will be given of an embodiment in which the heating means or processing means is laser light.

[0069] In the present invention, the femtosecond green laser is a second harmonic wave, so that a relatively high output can be extracted, and the material constituting the upper layer of the wiring 209 also has good absorption of the irradiated laser light.

[0070] The wavelength of light emitted by the femtosecond green laser is preferably 500 nm to 540 nm, and the pulse width is preferably 1 femtosecond to 1000 femtoseconds.

[0071] When a picosecond laser is used, the wavelength of the light emitted by the picosecond laser is preferably 500 nm to 540 nm, and the pulse width is preferably 1 picosecond to 10 picoseconds.

[0072] Fig. 10(a) is a plan view of the observation section 216, and Fig. 10(b) is a cross-sectional view of Fig. 10(a). As shown in Fig. 10(b), a short circuit 211 occurs between the surface wiring 209a and the inner wiring 209b.

[0073] 8, probe 207a is pressed against (electrically connected to) terminal electrode 208b, and probe 207a is pressed against (electrically connected to) terminal electrode 208b. A lock-in signal 206 is applied between probe 207b and probe 207a, and infrared camera 201 measures infrared rays 202 emitted from wiring 209a and wiring 209b to obtain an infrared image.

[0074] In addition, in FIG. 8, the laser beam 214 is irradiated and processed in the order of the laser processing section 215a, the laser processing section 215b, the laser processing section 215c, the laser processing section 215d, and the laser processing section 215e, but this is not limited to this, and the order of the laser processing sections 215 may be any order.

[0075] For ease of explanation, this specification and drawings will be described assuming that the laser-processed portions 215a, 215b, 215c, 215d, and 215e are processed in this order. Furthermore, multiple laser-processed portions 215 may be formed consecutively without measuring their resistance values. The resistance value of each laser-processed portion 215 is then measured.

[0076] 7 and 8, the laser processing portion 215a is irradiated with laser light 214 to expose the inner layer wiring 209b. Next, the probe 207c is pressed against the p1 position.

[0077] A lock-in signal 206 is applied between the probe 207c and the probe 207a, and the infrared camera 201 measures the infrared rays 202 emitted from the wiring 209a and the wiring 209b, thereby obtaining an infrared image. The resistance value between the probe 207a and the probe 207c is measured by a resistance measuring device 221. The measured resistance value is plotted as p1 on the graph shown in FIG. Next, the laser beam 214 is irradiated onto the laser processed portion 215b to expose the inner layer wiring 209b. Next, the probe 207c is pressed against the p2 position.

[0078] A lock-in signal 206 is applied between the probe 207c and the probe 207a, and the infrared camera 201 measures the infrared rays 202 emitted from the wiring 209a and the wiring 209b, thereby obtaining an infrared image. The resistance value between the probe 207a and the probe 207c is measured and plotted as p2 on the graph shown in FIG. Next, the laser beam 214 is irradiated onto the laser processed portion 215c to expose the inner layer wiring 209b. Next, the probe 207c is pressed against the p2 position.

[0079] A lock-in signal 206 is applied between the probe 207c and the probe 207a, and the infrared camera 201 measures the infrared rays 202 emitted from the wiring 209a and the wiring 209b, thereby obtaining an infrared image. The resistance value between the probe 207a and the probe 207c is measured and plotted as p3 on the graph shown in FIG. Next, the laser beam 214 is irradiated onto the laser processed portion 215d to expose the inner layer wiring 209b. Next, the probe 207c is pressed against the p2 position.

[0080] A lock-in signal 206 is applied between the probe 207c and the probe 207a, and the infrared camera 201 measures the infrared rays 202 emitted from the wiring 209a and the wiring 209b, thereby obtaining an infrared image. The resistance value between the probe 207a and the probe 207c is measured by a resistance measuring device 221. The measured resistance value is plotted as p4 on the graph shown in FIG. Next, the laser beam 214 is irradiated onto the laser processed portion 215e to expose the inner layer wiring 209b. Next, the probe 207c is pressed against the p2 position.

[0081] A lock-in signal 206 is applied between the probe 207c and the probe 207a, and the infrared camera 201 measures the infrared rays 202 emitted from the wiring 209a and the wiring 209b, thereby obtaining an infrared image. The resistance value between the probe 207a and the probe 207c is measured and plotted as p5 on the graph shown in FIG.

[0082] 9, the resistance value decreases from point p1 to point p4, but increases from point p4 to point p5, so it can be detected that there is a high possibility that a short circuit 211 exists between point p4 and point p5.

[0083] As described above, the present invention sequentially locates the short circuit 211 by using a laser device, a resistance or voltage measuring device 221, and a lock-in signal 206 generating device.

[0084] In the above embodiment, the laser beam 214 is irradiated onto the laser processed portion 215a to expose the inner layer wiring 209b. Next, the probe 207c is pressed against the position p1 to measure the resistance value, etc. However, the present invention is not limited to this.

[0085] By irradiating laser beam 214 onto laser-processed portion 215a such as short-circuited portion 211, short-circuited portion 211 or wiring is heated, and the resistance value increases. The increase in resistance value changes the current flowing through probe 207. The temperature change of the defective portion or observation portion due to the change in current may be detected by measuring infrared rays 202 with infrared camera 201, and an infrared image may be obtained.

[0086] In recent years, wiring 209 has become complexly formed, and a circuit board (not shown) or the like is mounted on circuit board 210, so that it is not possible to identify the position of short-circuited portion 211 by measuring the resistance value alone. Furthermore, if short-circuited portion 211 is a complete short-circuit or a short-circuit with a low resistance value, the position of short-circuited portion 211 cannot be identified even by applying lock-in signal 206 and observing it with infrared light. The position of short-circuit portion 211 can also be estimated by the fact that the ratio of the change in resistance value from p3 to p4 to the change in resistance value from p4 to p5 is small.

[0087] The position of the short circuit 211 may be estimated and identified by irradiating infrared rays or laser light to generate a change in resistance, measuring the resistance or change in resistance with infrared rays 202 using an infrared camera 201, and acquiring an infrared image.

[0088] In FIG. 8, as explained in FIG. 7, the material of the circuit board 210 above the wiring 209b is removed by the laser light 214, but it goes without saying that if the wiring 209b is formed on the surface layer, processing with the laser light 214 is not necessary.

[0089] 8, the approximate position of short-circuit part 211 can be identified by forming laser-processed part 215 with laser light 214 and measuring the resistance value at point p of laser-processed part 215. The approximate position is indicated by observation area 216 in FIG. Next, the observation area 216 is observed with an ultrasonic observation device, which is the inspection device of the present invention. Figure 11 is a block diagram of the ultrasonic observation device. FIG. 11 is a block diagram showing the configuration of the structural analysis device 1, the ultrasonic microscope 2, and the circuit board 210. The structural analysis device 1 includes a control unit 11 that controls the entire device, a main memory unit 12, a communication unit 13, an operation unit 14, a display panel 15, and an auxiliary memory unit 16.

[0090] The structural analysis device 1 can be configured, for example, as a desktop computer, a notebook personal computer, a tablet, etc. The above also applies to the control device 203 in FIG.

[0091] The control unit 11 can be configured with a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), etc. The control unit 11 may be configured to include a GPU (Graphics Processing Unit).

[0092] The main memory unit 12 is a temporary storage area such as a static random access memory (SRAM), a dynamic random access memory (DRAM), or a flash memory, and temporarily stores data required for the control unit 11 to execute arithmetic processing.

[0093] The communication unit 13 has a function of communicating with the structural analysis device 1 via the network 170, and can send and receive required information. The operation unit 14 is composed of, for example, a hardware keyboard, a mouse, a touch panel, and the like.

[0094] The display panel 15 can be configured with a liquid crystal panel, an organic EL (Electro Luminescence) display panel, etc. The control unit 11 controls the display panel 15 to display required information.

[0095] The auxiliary storage unit 16 is a large-capacity memory, a hard disk, or the like, and stores programs necessary for the control unit 11 to execute processing, as well as a waveform analysis program 171, a three-dimensional coordinate data generation program 161, and a sound speed calculation program 162.

[0096] The waveform analysis program 171, the three-dimensional coordinate data generation program 161, and the sound speed calculation program 162 stored in the auxiliary storage unit 16 may be provided by a recording medium 169 on which each program is readably recorded. The recording medium 169 is, for example, a portable memory such as a USB (Universal Serial Bus) memory, an SD (Secure Digital) card, a micro SD card, or a CompactFlash (registered trademark).

[0097] Each program recorded on the recording medium 169 is provided by communication via the communication unit 13. Alternatively, the program may be read from the recording medium 169 using a reading device (not shown) and installed in the auxiliary storage unit 16.

[0098] The auxiliary storage unit 16 stores a scan data (1) database (DB) 163, a material or composition database (DB) 164, a scan data (2) database (DB) 165, a propagation time database (DB) 166, a sound speed database (DB) 167, and a three-dimensional coordinate data database (DB) 168. The scan data is ultrasonic waveform data with amplitude on the vertical axis and propagation time on the horizontal axis.

[0099] The transducer 21 has the functions of moving in two dimensions (X direction, Y direction) relative to the plane on which the circuit board 210 is placed, moving an arbitrarily set distance to position it on the circuit board 210, moving or positioning it in a direction perpendicular to the plane on which the circuit board 210 is placed (Z direction) in order to irradiate ultrasonic waves onto layer materials, interfaces, etc., transmitting ultrasonic waves to interfaces, etc., receiving ultrasonic waves reflected at interfaces, etc., and converting the received ultrasonic waves into an electrical signal or displaying them.

[0100] The scan data (1) DB 163 stores scan data (1) acquired at each point when the transducer 21 of the ultrasonic microscope 2 scans the XY plane of the circuit board 210. The transducer 21 moves in the XY plane (two-dimensional direction) to irradiate the circuit board 210 with ultrasonic waves, and also has a position adjustment function in the direction perpendicular to the XY plane (Z direction), converting reflected ultrasonic waves into an electrical signal. The range irradiated with ultrasonic waves is assumed to be the observation area 216.

[0101] Scan data (1) is acquired at predetermined measurement intervals (distances) on the XY plane of the circuit board 210. The predetermined measurement intervals are changed depending on the shape or interface state of the circuit board 210. For example, at a position where the interface state changes significantly, the predetermined measurement intervals are set or changed to a short distance. The material or composition DB 164 stores the outer dimensions (thickness), density, etc. of the material that constitutes each layer of the circuit board 210.

[0102] The scan data (2) DB165 stores the scan data (2) acquired at each point when the transducer 21 of the ultrasonic microscope 2 scans the XY plane of each material sample constituting the circuit board 210 in order to calculate the sound velocity of each layer. The propagation time DB 166 stores the propagation time to the interface calculated by a method described later.

[0103] The sound speed DB167 stores the propagation time calculated from the scan data (2) stored in the scan data (2) DB165 and the sound speed calculated based on the outer dimensions (thickness) of the material of each layer stored in the material or composition DB164. The three-dimensional coordinate data DB 168 stores three-dimensional coordinate data of the circuit board 210 generated by the three-dimensional coordinate data generating program 161.

[0104] The circuit board 210 is a circuit board having a multi-layer structure including a first layer 31, a second layer 32, a third layer 33, a fourth layer 34, and a fifth layer 35 as shown in FIG.

[0105] For ease of understanding, the circuit board 210 will be described as an example, but the present invention is not limited to this. The technical concept of the present invention can also be applied to semiconductor elements, thin film devices, thick film devices, electronic devices, etc.

[0106] The present invention can effectively measure the film thickness of a material or the thickness of a composition, or the three-dimensional amount of warping or distortion thereof, in a structure having layers of different materials or compositions, as long as the structure has an interface where the different materials or compositions come into contact. Therefore, it goes without saying that the technical concept and method of the present invention can be applied to the structural analysis of an object made of multiple materials or a living organism made of multiple compositions.

[0107] By using ultrasonic waves, it is possible to detect short-circuit parts 211 even if they are made of aluminum, carbon, etc., through which X-rays pass. It goes without saying that by combining this with an X-ray imaging device, the position of the short-circuit part 211 can be more accurately identified.

[0108] In the ultrasonic microscope 2, a transmission wave 23, which is an electric signal of a constant frequency, is shaped into a pulse by a pulse generator (not shown), and then the electric signal is converted into mechanical vibration (ultrasound) by a transducer 21.

[0109] The transducer 21 scans the XY plane (observation area 216) of the circuit board 210. The generated ultrasonic waves are focused by an acoustic lens (not shown) on the interface in the depth direction (Z direction) of the circuit board 210 to irradiate the interface as a transmission wave 23, and the reception wave 24 is converted into an electrical reception signal.

[0110] A gate (not shown) extracts reflected waves detected from the reflected signal of the circuit board 210 for a predetermined time from a predetermined time or for a fixed period of time. The focal position of the acoustic lens is adjusted to the interface so that the reflected waves input to the gate reach a predetermined threshold or reach their maximum. The gain is also adjusted so that the signal strength received by the gate is constant, and the propagation time at each interface is calculated.

[0111] A method for calculating the thickness of each layer of the circuit board 210 and the amount of warpage and distortion at each interface will be described with reference to Fig. 12. Fig. 12 illustrates an example in which the first layer 31 is a "metal" such as copper foil, the second layer 32 is a "resin" such as a glass epoxy material, and the third layer 33 is a "metal" such as copper foil.

[0112] An ultrasonic transmission wave 23 (U1) is emitted from the transducer 21 toward an interface (surface) 31a on the inlet side of the first layer 31 made of, for example, metal, and is reflected at the interface 31a, resulting in a received wave 24 (R1). Based on the waveform reflected at the interface 31a, a propagation time t1 from the transducer 21 to the interface is calculated.

[0113] An ultrasonic transmission wave 23 (U2) is emitted from the transducer 21 toward the interface 32a between the first layer 31 and the second layer 32 made of, for example, resin, and is reflected at the interface, resulting in a received wave 24 (R2). Based on the waveforms reflected at the interfaces 31a and 32a, a propagation time t2 for the wave to propagate through the first layer 31 is calculated.

[0114] An ultrasonic transmission wave 23 (U3) is emitted from the transducer 21 toward an interface 33a between the second layer 32 and a third layer 33 made of, for example, metal, and is reflected at the interface 33a, resulting in a received wave 24 (R3). A propagation time t3 for propagation through the second layer 32 is calculated based on the waveforms reflected at the interfaces 32a and 33a.

[0115] Based on the calculated sound velocities at the respective propagation times t1, t2, and t3, the distance from transducer 21 to interface 31a, the distance from interface 31a to interface 32a, and the distance from interface 32a to interface 33a can be calculated, and by adding these distances in the depth direction (Z direction), the displacements of interfaces 31a, 32a, and 33a of circuit board 210 can be generated as three-dimensional coordinate data, and by using data such as material or composition DB 164, the thickness of each layer of circuit board 210, the amount of warping and distortion of short circuit portion 211 and each interface, etc. can be calculated.

[0116] A method for accurately measuring the propagation time through each layer is shown using Figure 13. In Figure 13(a1), the transducer 21 is focused on the interface 31a, so in the scan data of Figure 13(a2), the peak intensity of the waveform in the foreground is strong, but the peak intensity of the waveform in the background is weak.

[0117] In FIG. 13(b1), the transducer 21 is focused midway between the interface 31a and the interface 32a, so the peak intensity of the waveform at the back of the scan data in FIG. 13(b2) is stronger than that in (a2).

[0118] In FIG. 13(c1), the transducer 21 is focused on the interface 32a, so the peak intensity of the waveform at the back of the scan data in FIG. 13(c2) is stronger than that in FIG. 13(b2).

[0119] From the above, when it is desired to measure the propagation time of the reflected wave at the interface 31a, the waveform peak can be captured with high accuracy by focusing the transducer 21 on the interface 31a as shown in FIG. 13(a1).

[0120] On the other hand, when it is desired to measure the propagation time of the reflected wave at the interface 32a, the waveform peak can be captured with high accuracy by focusing the transducer 21 on the interface 32a as shown in FIG. 13(c1).

[0121] The method of exploratory scanning for the focal position with the highest peak intensity is carried out using the hill-climbing method shown in Figure 18. The hill-climbing method is a local search method that selects the "solution with the best performance among those in the vicinity of the current solution" as the nearby solution, and swaps the nearby solution with the current solution if "the performance of the nearby solution is better than that of the current solution." The goal is to find the extreme value, and once the extreme value is found, the search ends. By changing the focal position, the peak waveform at the interface position changes as shown in FIGS. 18(a), (b), (c), and (d).

[0122] Starting from the position indicated by arrow A in Figure 18(a), the peak intensity changes to arrow B in Figure 18(b), arrow C in Figure 18(c), and arrow D in Figure 18(d). The focal position is shifted from the position indicated by arrow A in Figure 18(a) in the direction where the peak intensity increases, but when it passes the position indicated by arrow B in Figure 18(b) and reaches the position indicated by arrow C in Figure 18(c), the peak intensity decreases. At this point, in order to increase the peak intensity, it is necessary to return the focal position to the position indicated by arrow D in Figure 18(d).

[0123] By repeating this process many times, it is possible to search for the focal position where the peak intensity is highest. This method can be used to search for the position where the peak intensity is highest manually, but using a computer program makes it possible to search more efficiently.

[0124] In this way, depending on the object to be measured (interface 31a, interface 32a, interface 33a), the peak intensity of the scan data is observed while exploratory scanning is performed to find the focal position with the highest peak intensity, and the waveform peak at that focal position is detected, thereby making it possible to accurately measure the time it takes for the beam to propagate through each layer.

[0125] The detection of the peak position is not limited to the maximum or minimum value. For example, the peak position may be detected when the value is within -5% of the maximum value or within a predetermined quantitative value. Also, the peak position may be detected when the value is within +5% of the minimum value or within a predetermined quantitative value. The transducer 21 moves sequentially in the X and Y directions on each material sample 3 and detects the waveform at each position.

[0126] The focus of the transducer 21 is changed depending on the object to be measured (interface 31a, interface 32a, interface 33a), and the time it takes for the signal to propagate through each layer can be measured with high accuracy by detecting the waveform peak or whether the received signal is above or below a predetermined threshold from the scan data.

[0127] By changing the focal position of the transducer 21 and acquiring scan data, information regarding the waveform peak, or whether the waveform is above or below a predetermined threshold, or the rate of change of the waveform can be obtained, thereby enabling accurate measurement of the time it takes for the wave to propagate through each layer.

[0128] By adjusting or changing the phase of the ultrasonic wave transmitted by the transducer 21 and acquiring scan data of the received wave, information regarding the waveform peak, or whether the waveform is above or below a predetermined threshold, or the rate of change in the waveform can be obtained, and the time it takes to propagate through each layer can be measured with high accuracy.

[0129] The focal position of transducer 21 is changed depending on the target to be measured (interface 31a, interface 32a, interface 33a). In addition, by adjusting or changing the phase of the ultrasonic wave transmitted by transducer 21, information on each waveform peak, whether the wave is above or below a predetermined threshold, or the rate of change of the waveform can be obtained. For example, when aligned with interface 32a, information on the waveform peak of interface 33a as well as interface 32a can be obtained, and this information can be used to accurately measure the propagation time through each layer.

[0130] As shown in FIG. 19(a), it is assumed that the circuit board 210 has interfaces (31a, 32a, 33a) in the observation area 216. The transducer 21 moves sequentially to the measurement position 181 by a predetermined distance dx in the X direction and a predetermined distance dy in the Y direction. The focal position is adjusted at the measurement position 181. Ultrasonic waves are emitted from the moved measurement position 181, and the reflected waves of the ultrasonic waves at the interfaces are received. The positions of the interfaces 31a, 32a, and 33a are determined by moving or changing the focal position in the Z axis direction. The determined interface positions are stored in a database.

[0131] As shown in Figure 19(b), if the circuit board 210 is formed of three materials or components, a first layer 31, a second layer 32, and a third layer 33, then in position A of Figure 19(b), only the third layer 33 is present. In position B of Figure 19(b), the first layer 31 and the third layer 33 are present. In position C of Figure 19(b), the first layer 31, the second layer 32, and the third layer 33 are present. The transducer 21 is moved by a predetermined distance dx, dy, and positioned, and the focal position is changed to sequentially determine the interface position at the measurement position 181.

[0132] 19(b), in the region including A, the propagation time t1 from the water surface to the third layer 31 and the propagation time t2 through the third layer 33 are measured. The unevenness, warping, and distortion of the third layer 33 in the region including A are calculated.

[0133] In Figure 19(b), in the region including B, the propagation time t3 from the water surface to the first layer 31, the propagation time t4 through the first layer, the propagation time t5 between the first layer 31 and the third layer 33, and the propagation time t6 through the third layer are measured. The unevenness, warping, and distortion of the first layer 31 in the region including B, and the unevenness, warping, and distortion of the third layer 33 are calculated. In addition, the difference in thickness between the third layer in the region including A and the third layer in the region including B is quantitatively measured.

[0134] In Figure 19(b), in the region including C, the propagation time t7 from the water surface to the first layer 31, the propagation time t8 through the first layer, the propagation time t9 through the second layer 32, and the propagation time t10 through the third layer are measured. The unevenness, warping, and distortion of the first layer 31 in the region including C, the unevenness, warping, and distortion of the second layer 32, and the unevenness, warping, and distortion of the third layer 33 are calculated. In addition, the difference in thickness between the first layer in the region including B and the first layer in the region including C is quantitatively measured. In addition, the difference in thickness between the third layer in the region including B and the third layer in the region including C is quantitatively measured.

[0135] 14 is a flowchart showing the procedure of a process for calculating the speed of sound propagating through a material, performed by the control unit 11. The control unit 11 reads out the sound speed calculation program 162 and executes the process for calculating the speed of sound.

[0136] The control unit 11 causes the transducer 21 of the ultrasonic microscope 2 to scan each material sample constituting the circuit board 210 on the XY plane, and acquires scan data using the measurement method shown in Fig. 13 (S1). The number of points on the XY plane from which scan data is acquired is the same as the number of points on the XY plane from which scan data of the circuit board 210 is acquired. However, the present invention is not limited to this. For example, if the change in the acquired scan data is large, the number of measurement points per unit distance is increased.

[0137] The control unit 11 stores (S2) the obtained scan data in the scan data (2) DB 165. The control unit 11 calculates the propagation time through the material from the difference between the time when the reflected waveform of the scan data reaches its peak at the interface on the material outlet side and the time when the reflected waveform of the scan data reaches its peak at the interface on the material inlet side (S3).

[0138] Alternatively, a predetermined threshold is set for the received wave 24, and the propagation time for the wave to propagate through the material is determined from the range above or below the predetermined threshold, the rate of change, etc. The control unit 11 stores the propagation time in the propagation time DB 166 (S4). The control unit 11 acquires the outer dimensions (thickness) of the material from the material or composition DB 164 (S5). The control unit 11 calculates the sound speed of the material based on the propagation time and the thickness (S6). When the propagation time is t and the thickness is L, the speed of sound is calculated using the following formula. Speed of sound = L / t. The control unit 11 stores the sound velocity in the sound velocity DB 167 (S7).

[0139] 15 is a flowchart showing the procedure of the three-dimensional coordinate data generation process by the control unit 11. The control unit 11 reads out the waveform analysis program 171 and the three-dimensional coordinate data generation program 161 to execute the three-dimensional coordinate data generation process.

[0140] The control unit 11 causes the transducer 21 of the ultrasonic microscope 2 to scan the XY plane of the circuit board 210, and acquires scan data at each point on the XY plane for each layer using the measurement method shown in FIG. 13 (S11). The control unit 11 stores the obtained scan data in the scan data (1) DB 163 (S12).

[0141] The control unit 11 determines the range in which the peak of the reflected waveform at the interface of the material is detected (S13). The initial setting range for the range in which the peak is detected is set to a range calculated in advance using the outer dimensions (thickness) of the material obtained from the material or composition DB 164 and the sound speed obtained from the sound speed DB 167 for the object to be measured. The control unit 11 determines whether the acoustic impedance Z2 of the lower layer is greater than the acoustic impedance Z1 of the upper layer (S14). Acoustic impedance indicates the difficulty of ultrasonic waves passing through a material and is calculated using the following formula: Z (acoustic impedance) = p (density of material) x c (material-specific sound speed).

[0142] A substance may be a mixture of multiple substances, or an alloy of multiple metals. Some substances may have tiny voids within them. Some substances may be a mixture of multiple materials, loosely and densely combined, synthesized, and turbid. Some substances may be composed of multiple thin films that are thinner than the wavelength of light, formed into multiple layers.

[0143] Therefore, "substance" refers to a substance having a wide variety of materials, structures, and compositions, and "density of a substance" refers to the overall or microscopic density of the substance. Also, "speed of sound specific to a substance" refers to the overall or microscopic speed of sound of the substance.

[0144] In a strict sense, acoustic impedance is the density of a material multiplied by the sound speed specific to that material. However, it also includes the addition, subtraction, multiplication, or division of a certain ratio or constant to the acoustic impedance.

[0145] It goes without saying that the acoustic impedance may also include a coefficient that varies depending on temperature, etc., added, subtracted, multiplied, or divided by a certain ratio or constant.

[0146] If the control unit 11 determines that Z2>Z1 (S14: YES), the reflected waveform is a positive waveform, and therefore calculates the local maximum value of the reflected waveform within the detection range (S15). The control unit 11 calculates the propagation time to the local maximum value of the reflected waveform (S15).

[0147] When the control unit 11 determines that Z2>Z1 is not true (S14: NO), the reflected waveform is a negative waveform, and therefore calculates the local minimum value of the reflected waveform within the detection range (S17). The control unit 11 calculates the propagation time to the local minimum value of the reflected waveform (S18).

[0148] 12, when the interface is interface 31a of first layer 31, propagation time t1 is calculated. When the interface is interface 32a between first layer 31 and second layer 32, propagation time t2 is calculated. When the interface is interface 33a between second layer 32 and third layer 33, propagation time t3 is calculated.

[0149] In S19, the control unit 11 calculates the distance (interface position) from the lower surface (reference point) of the transducer 21 to each interface based on the calculated propagation time. The control unit 11 acquires the sound speed when the ultrasonic wave propagates to each interface from the sound speed DB 167 (from S7), and calculates the distance by multiplying the propagation time when the ultrasonic wave propagates between each interface by the sound speed corresponding to the material constituting each layer. The control unit 11 generates three-dimensional coordinate data based on the calculated interface position (S20). The control unit 11 stores the three-dimensional coordinate data in the three-dimensional coordinate data DB 168 (S21). When the acoustic impedance of the upper layer of the overlapping material is Z1 and the acoustic impedance of the lower layer is Z2, the amplitude reflection coefficient of the sound wave at the interface is (Z2-Z1) / (Z2+Z1).

[0150] In other words, if the acoustic impedances Z1 and Z2 of both materials are equal, no reflection occurs. Therefore, as shown in Figure 16, the waveform is Large Positive in the case of (b1), Positive in the case of (b2), No Signal in the case of (b3), Negative in the case of (b4), and Large Negative in the case of (b5).

[0151] In this embodiment, a transmitted wave 23 is transmitted to the structure 3, and a received wave 24 is measured or analyzed. The measurement or analysis is performed by calculating or computing using the amplitude of the received wave from the time the transmitted wave was transmitted to the time the received wave was received, the amplitude change rate of the received wave within a predetermined second time (gate time) from the first time the received wave was received, the polarity of the received wave (positive, negative), etc.

[0152] Also, the measurement or analysis is performed by calculating or computing using, for example, the magnitude of the amplitude of the received wave within a predetermined time (gate time), the rate of change of the amplitude, the polarity (positive, negative) of the received wave, etc. from the first time after a predetermined time has elapsed since the time when the transmission wave was transmitted. The calculation or computation is performed using data in a database such as the dimensions and density of the material constituting the structure.

[0153] For example, as shown in (a1) and (a2) of FIG. 17, when the first layer 31 is made of resin and the second layer is made of metal, the waveforms at the interfaces 31a and 32a are positive waveforms, and the waveform at the interface 33a is a negative waveform.

[0154] Note that the interfaces 31a and 33a are in contact with water. At the interface 31a, when the acoustic impedance of the resin is Z2 and the acoustic impedance of water is Z1, there is a relationship of Z2 > Z1, but generally the difference between Z2 and Z1 is small. Therefore, it becomes a positive waveform, but the peak is small.

[0155] At the interface 32a, when the acoustic impedance of the resin is Z1 and the acoustic impedance of the metal is Z2, there is a relationship of Z2 > Z1, and the difference between Z2 and Z1 is large. Therefore, it becomes a positive waveform with a large peak.

[0156] At the interface 33a, when the acoustic impedance of the metal is Z2 and the acoustic impedance of water is Z1, there is a relationship of Z2 < Z1, and the difference between Z2 and Z1 is large. Therefore, it becomes a negative waveform with a large peak.

[0157] The difference in the propagation time from the transducer 21 to the local maximum value of the waveform at each of the interfaces 31a and 32a is t2. The difference in the propagation time to the local maximum value of the waveform at the interface 32a and the local minimum value of the waveform at the interface 33a is t3.

[0158] As shown in (b1) and (b2) of FIG. 17, when the first layer 31 is made of resin, the second layer 32 is made of metal, and the third layer 33 is made of resin, the waveforms at the interfaces 31a and 32a are positive waveforms, and the waveforms at the interfaces 33a and 34a are negative waveforms.

[0159] Note that the interfaces 31a and 34a are in contact with water. At the interface 31a, when the acoustic impedance of the resin is Z2 and the acoustic impedance of water is Z1, there is a relationship of Z2 > Z1, but generally the difference between Z2 and Z1 is small. Therefore, it becomes a positive waveform, but the peak is small.

[0160] At the interface 32a, when the acoustic impedance of the resin is Z1 and the acoustic impedance of the metal is Z2, there is a relationship of Z2 > Z1, and although there is a difference between Z2 and Z1, there is no large difference. Therefore, the peak becomes a positive waveform that is slightly larger than that at the interface 31a.

[0161] At the interface 33a, when the acoustic impedance of the metal is Z1 and the acoustic impedance of the resin is Z2, there is a relationship of Z2 < Z1, and the difference between Z2 and Z1 is large. Therefore, the peak becomes a large negative waveform.

[0162] At the interface 34a, when the acoustic impedance of the resin is Z1 and the acoustic impedance of water is Z2, there is a relationship of Z2 < Z1, and the difference between Z2 and Z1 is relatively large. Therefore, it becomes a negative waveform with a relatively large peak.

[0163] The difference in the propagation time to the local maximum value of the waveforms at each of the interfaces 31a and 32a is t2. The difference in the propagation time to the local maximum value of the waveform at the interface 32a and the local minimum value of the waveform at the interface 33a is t3. The difference in the propagation time to the local minimum value of the waveforms at each of the interfaces 33a and 34a is t4.

[0164] The example shown in (c1) of Figure 17 shows a state in which a void (space) has occurred in the center between the resin and the metal. As shown in Figures 17(c1) and (c2), when the first layer 31 is made of resin and the second layer 32 is made of metal, the interface 31a is the interface between water and resin, and therefore the waveform at interface 31a is a positive waveform. Interface 32b is the interface between the resin 31 and the void (space). The difference (Z2 - Z1) between the acoustic impedance Z2 of the resin and the acoustic impedance Z1 of the space (void) is large. Therefore, a large negative waveform is detected at interface 32b. The difference in propagation time between the local maximum value of the waveform at interface 31a and the local minimum value of the waveform at interface 32a is t2. The occurrence of a void, short circuit, etc. at interface 32b can be easily detected from the detected waveform.

[0165] As described above, by observing and measuring the surface and inner layers of the circuit board 210 with the ultrasonic microscope 2 within the observation area 2 as shown in Figure 19, the structure and configuration including the wiring 209 and short circuit portion 211 can be obtained.

[0166] Measurement using an ultrasonic microscope 2 often takes a long time when there are many measurement points, but as shown in Figure 8, since the observation area 216 is specified, the number of measurement points is small and the approximate position of the short circuit 211 is specified, the increments of the location presumed to be the short circuit 211 can be made small, allowing for accurate measurement and the position presumed to be the short circuit 211 to be specified.

[0167] In the present invention, by combining the image observed by the ultrasonic microscope 2 with the infrared image obtained by the lock-in signal 206, the position of the short-circuited part 211 can be identified even if the short-circuited part 211 is completely short-circuited.

[0168] Furthermore, the present invention can locate, detect, evaluate, or inspect the short circuit 211 by using at least one or a combination of multiple of the observation image of the ultrasonic microscope 2, the infrared image using the lock-in signal 206, the X-ray image taken by the X-ray imaging device, the pattern layout diagram, the laser processing described in FIG. 7, the measurement of the resistance value or voltage value described in FIG. 8, and the visual observation of the wiring 209.

[0169] The above-described embodiment mainly employs a method in which the terminal electrode 208 of the wiring 209 of the circuit board 210 is electrically connected with the probe 207 or the like, and the lock-in signal 206 is applied to the wiring 209 to detect the short-circuited portion 211. However, the present invention is not limited to this.

[0170] FIG. 20 is an explanatory diagram of a method in which a synchronization signal output by a device (component) is captured by a synchronization signal detector 313, and in synchronization with this synchronization signal, a control device 203 captures infrared rays emitted from an object using an infrared camera 201, thereby detecting temperature changes, etc., of the object.

[0171] Fig. 20 shows an example in which a lock-in signal is output from a device (component) 305. For ease of explanation, Fig. 20 will be described assuming that the device (component) 305 is a liquid crystal display (LCD) as an example.

[0172] As shown in FIG. 22, the LCD 305 has a display area 306, and also has a gate driver circuit 307 and a source driver circuit 308. An example of the synchronization signal is a start pulse (start signal STV of the vertical scanning signal) of the gate driver circuit 307. The start pulse is output from the source driver circuit 308 to a signal output (or input) terminal 303a and applied to the gate driver circuit 307. Meanwhile, a predetermined voltage is output to a ground (GND) terminal 303b. Probe 207a is pressure-contacted (connected) to signal output terminal 303a, and probe 207b is pressure-contacted (connected) to ground terminal 303b.

[0173] The synchronization signal STV output to the probe 207 is used as a lock-in signal 206, and the infrared camera 201 captures the infrared rays or temperature changes emitted from the charge / discharge unit (temperature change unit) 301 in synchronization with this synchronization signal STV.

[0174] In the LCD shown in FIG. 22, a gate signal line 309 is connected to an output terminal of a gate driver circuit 307 via a contact hole 311. If a connection failure occurs in the contact hole during manufacturing, no voltage is applied to the gate signal line 309. A parasitic capacitance appears to occur in the gate signal line 309. An on-voltage (VGH) and an off-voltage (VGL) are cyclically applied to the gate signal line 309.

[0175] A gate voltage (VGH, VGL) applied to the gate signal line 309 causes a charge / discharge current to flow through the contact hole 311. Because the contact hole 311 has a relatively high resistance, the contact hole 311 generates heat when a current flows through the contact hole 311. An on-voltage is applied to the gate signal line 309 in sequence. When an on-voltage is applied, the potential of the gate signal line 309 changes from an off-voltage (VGL) to an on-voltage (VGH), and a charge / discharge current flows through the corresponding contact hole 311. If the contact hole 311 is not connected, no charge / discharge current flows and the contact hole 311 does not generate heat.

[0176] Since an on / off voltage is applied to the gate signal line 309 in synchronization with the STV signal, whether the connection state of the contact hole 311 is normal or abnormal can be detected by observing the heat generation state of the contact hole 311 in synchronization with the STV signal.

[0177] For example, when contact hole 311a is connected properly, contact hole 311a generates heat and can be determined to be normal by detecting the temperature state. When contact hole 311b is not connected, contact hole 311a does not generate heat and can be determined to be abnormal.

[0178] 20 and 22 are described as observing temperature changes in contact holes, but the present invention is not limited to this. For example, the present invention can be applied to various parts and locations, such as a location where different metal films come into contact, an element such as a TFT (thin film transistor), or a location where multiple signal lines intersect with each other via an insulating film.

[0179] As described above, in synchronization with the synchronization signal STV, the infrared image captured by the infrared camera 201 is subjected to image processing or visual judgment to detect or judge a connection failure occurring in the contact hole 311 or the like.

[0180] In the LCD shown in FIG. 22, a source signal line 310 is connected to an output terminal of a source driver circuit 308 via a contact hole 312. If a connection failure occurs in the contact hole 312 during manufacturing, a voltage (signal) will not be applied or supplied to the source signal line 310. An additional capacitance or an element such as a TFT is formed on the source signal line 310. A video signal is applied or changed to the source signal line 310 in synchronization (vertical synchronization signal VS) with the selection of the gate signal line 309 (application of the VGH voltage).

[0181] A video signal applied to the source signal line 310 causes a charge / discharge current to flow through the contact hole 312. Because the contact hole 312 has a relatively high resistance, the contact hole 312 generates a small amount of heat when a current flows through the contact hole 312. If a break or the like occurs in the contact hole 312, the charge / discharge current caused by the video signal does not flow, and the contact hole 312 does not generate heat.

[0182] By observing the heat generation state or temperature of the contact hole 312 in synchronization with the selection of the gate signal line 309 (synchronization signal VS), it is possible to detect whether the connection state of the contact hole 312 is normal or abnormal.

[0183] For example, if contact hole 312a is properly connected, contact hole 312a generates heat, and by detecting the temperature state and / or temperature, it can be determined that the contact hole is normal. If contact hole 312b is not connected, contact hole 312a does not generate heat, and it can be determined that the contact hole is abnormal.

[0184] A predetermined time after the rise of the synchronization signal Vs has elapsed, an on-voltage is applied to each gate signal line 309. Therefore, temperature information and the like is acquired from the synchronization signal in accordance with the selection time of the gate signal line 309.

[0185] As described above, in synchronization with the vertical synchronization signal VS, the infrared image captured by the infrared camera 201 is subjected to image processing or visual judgment to detect or judge connection failures occurring in the contact holes 312, etc. The vertical synchronization signal VS, etc. are output to the signal output terminal 303.

[0186] In the above embodiment, the synchronization signal etc. output to the signal output terminal 303 is acquired, detected by the synchronization signal detector 313, and used to control the infrared camera 201 etc. However, the present invention is not limited to this.

[0187] The signal terminal 303 is a signal input terminal, and the synchronization signal detector 313 generates a synchronization signal, which may be used to control devices (components) as well as the infrared camera 201. The lock-in signal 206 is a synchronization signal that changes periodically. The period is tc.

[0188] In this specification, temperature information of an observation location is detected or acquired by an infrared camera 201 or the like using a lock-in signal 206. Alternatively, inspection, evaluation, determination of the state of defects or the like, or evaluation of a specific location including the observation location is performed.

[0189] In addition, the synchronization signal (lock-in signal) 206 output by the device (component) is used to observe or measure the heat generation or non-heat generation state of disconnected or cut parts such as contact holes, and inspection or evaluation is performed based on temperature information obtained from an infrared camera 201, etc.

[0190] The present invention relates to a lock-in temperature device, and also to an inspection (evaluation) device or an inspection (evaluation) system that is configured by combining one or more devices such as a lock-in temperature device, an X-ray imaging device, an ultrasonic imaging device, a laser processing device, a positioning device 219, and a pixel processing device. It also relates to testing methods that use and apply these. Testing includes concepts and technical ideas such as detection, evaluation, measurement, observation, analysis, and interpretation.

[0191] The control device 203 supplies the synchronization signal 206 as a control signal 205a to the synchronization signal detector 313. The synchronization signal detected by the synchronization signal detector 313 is supplied to the control device 203.

[0192] The synchronization signal detector 313 also functions as a signal generator, supplying a synchronization signal to the device (component) and applying the synchronization signal as the control signal 205 to the control device 203.

[0193] The synchronization signal and the like are supplied to or obtained from the signal input (output) terminal 303 via the probe 207. The synchronization signal and the like can be adjusted (phase adjusted). By adjusting the phase, it is possible to obtain the most sensitive temperature distribution and high temperature accuracy.

[0194] The infrared camera 201 synchronizes with the control signal 205 (adjusting the phase to adjust the timing) and measures, evaluates, measures, and detects the infrared rays 202 generated by the temperature measurement unit 311 or the short-circuited part 211. The infrared camera 201 has a function to adjust the phase relationship with the control signal 205 so as to achieve the highest sensitivity. The period of the lock-in signal 206 is varied to adjust the amount of infrared rays 202 generated appropriately so that the infrared camera 201 can detect the short-circuit point 211 .

[0195] The control signal 205b causes the infrared camera 201 to capture infrared light 202. The capture period of the infrared light 202 is the period t3 of the control signal 205b. The period t3 is variable. The cycle of the synchronization signal 206 and the control signal 205b is tc, but the phase relationship between the lock-in signal 206 and the control signal 205b can be varied or adjusted.

[0196] The infrared camera 201 acquires temperature information in response to the control signal (periodic signal) 206, achieving high temperature sensitivity. It does not respond to steady heat generation that is not synchronized with the lock-in signal 206a, or the sensitivity of the response can be reduced.

[0197] Infrared camera 201 synchronizes with synchronization signal 206, captures infrared rays 202, and transfers the captured data Dt to control device 203. The inspection device of the present invention has a function of adjusting the phases of control signals 205a and 205b.

[0198] A moving stage (not shown) is arranged so that the infrared camera 201 can move in the XY(Z) direction. Alternatively, the device (component) 305 is loaded on a positioning device 219 and configured so that it can be moved to a different position.

[0199] 20 shows a state in which two probes 207 are connected to the signal terminal 303, but this is not limiting, and it goes without saying that three or more probes 207 may be electrically connected to three or more signal terminals 303 to acquire data Dt with the infrared camera 201. The signal terminal 303 may also be connected via a connector or the like without connecting the probes 207. Alternatively, the signal terminal 303 may be electrically connected via a relay, switch, or the like.

[0200] A thermal response signal is detected from the IR image at periodic intervals, and the occurrence of a hot spot image and a change in the hot spot image at an observation point such as a contact hole of the equipment (component) 305 are identified in response to the frequency of the thermal response signal, thereby detecting and inspecting the observation point (charge / discharge section, temperature change section) 301.

[0201] 20 has been described using the LCD shown in Fig. 22 as an example, but the present invention is not limited to this. It goes without saying that the present invention can be applied to any device (component) that supplies or stops a voltage or current signal to a signal line or wiring in synchronization with a synchronization signal.

[0202] 21 is an explanatory diagram of another embodiment of the present invention. An example of an object to be inspected and evaluated is a MEMS (Micro Electro Mechanical Systems). MEMS is a device (component) in which an electric circuit and a minute mechanical structure are integrated on a single semiconductor substrate, and is a device or system such as a sensor or actuator in which minute electric elements and mechanical elements are incorporated on a single substrate by applying various microfabrication technologies such as semiconductor manufacturing technology and laser processing technology.

[0203] Therefore, while LSI (large-scale integrated circuit) processes only electrical signals on a semiconductor substrate, MEMS utilizes movable parts that move up and down and left and right, taking advantage of the mechanical properties of the material.

[0204] Figure 23 shows a vibrating structure gyroscope (VGS) as an example of MEMS. This gyroscope detects angular velocity due to vibration or movement.

[0205] It is a fundamental physical principle that when a vibrating object rotates, a force perpendicular to the vibration is generated in a plane perpendicular to the axis of rotation. The force generated when the vibrator rotates is due to the Coriolis force equation of motion, so in engineering literature it is also called a Coriolis vibratory gyro (CVG).

[0206] Vibratory gyroscopes can achieve the same level of accuracy more simply and cheaply than conventional rotary gyroscopes. A relatively inexpensive type of attitude indicator is a miniaturized device that uses this principle. When a proof mass moving at velocity v is rotated with angular velocity Ω, acceleration occurs due to the Coriolis effect. The velocity on the surface of the proof mass at a position on the surface of the proof mass is xp. m is the mass of the proof mass, kp (p is x, y, etc.) is the spring constant defined outside the surface of the proof mass, and Ω is the angular velocity vector on the surface of the proof mass (perpendicular to the motion of the proof mass caused by the rotation). When a MEMS vibratory gyroscope moves in the X and Y directions, the spring constant kp (which can be equivalently expressed as a spring and, for ease of explanation, will be called spring k (ky, kx)) defined outside the proof mass plane changes, causing a change in temperature. If spring k is defective, the temperature does not change.

[0207] Therefore, by measuring or observing the temperature of the spring kp, it is possible to determine or evaluate whether a MEMS (which is a component) such as a vibratory gyroscope is normal or defective. FIG. 21 is an explanatory diagram of an inspection device (evaluation device) for inspecting and evaluating MEMS such as a vibratory gyroscope.

[0208] The MEMS 305 is mounted on a positioning device 219. A signal line terminal (ground terminal) 303 of the MEMS 219 is configured so that signals can be input and output via a probe 207 or a connector (not shown). Signal application (input), output, synchronization signal detector 313, and lock-in signal have been explained in Fig. 20 etc. and will not be described here.

[0209] As shown in Fig. 24, the positioning device 219 moves between positions A and B, and as shown in Fig. 21, the positioning device 219 moves back and forth between positions A and B. It moves from position A to position B, and then moves from position B to position A. An infrared camera 201 is placed at position B. The temperature or temperature information of the spring kp is acquired at position B.

[0210] It moves from position A to position B, then changes direction from position B to position A, and stops at position B. At position B, the equivalent resistance value of the spring kp of the vibratory gyroscope changes, causing the spring kp to generate heat. If the spring kp of the vibratory gyroscope is defective, the equivalent resistance value does not change and no temperature change occurs in the spring kp. At times (time) t2 and t4, the MEMS 305 stops at position B. The spring kp of the MEMS 305 stopped at position B changes, causing a temperature change, which is measured or detected by the infrared camera 201.

[0211] A synchronization signal or the like is output from or input to the signal terminal 303 of the MEMS 305, and the MEMS 305 is controlled or operates in synchronization with the synchronization signal or the like. Note that the temperature detection and temperature acquisition methods have been explained in other embodiments, so explanations thereof will be omitted.

[0212] In the examples of Figures 22 and 23, a spring kp is used, but this is not limited to this, and any configuration, device, or part may be used as long as the mechanically movable part of the MEMS can be changed by movement, etc.

[0213] It goes without saying that the movement is not limited to reciprocating movement between positions A and B, but can be any configuration as long as it moves in one direction or in a circle, stops at a predetermined position, and starts moving again.

[0214] It goes without saying that the matters described in this specification can be mutually combined with the embodiments described in this specification. For example, it goes without saying that the X-ray inspection apparatus or the control method for the X-ray inspection apparatus described in Fig. 6 etc. can be combined with the ultrasonic microscope of Fig. 11, and can be combined with the positioning apparatus of Fig. 21, etc.

[0215] Furthermore, as explained in Figures 7 and 8, it goes without saying that this can be combined with a method in which laser light 214 is irradiated onto laser processing portion 215a to process inner layer wiring 209b, and infrared camera 201 measures infrared rays 202 emitted from wiring 209a and wiring 209b. It goes without saying that this can be combined with the configuration or method of the structural analysis device 1 and the ultrasonic microscope 2 described with reference to FIG. 11 and the like.

[0216] Furthermore, as explained with reference to FIGS. 8 to 10, it goes without saying that this may be combined with a method of irradiating laser light and infrared rays, measuring the emitted infrared rays 202 with an infrared camera 201, and acquiring an infrared image. It goes without saying that a plurality of or all of these devices or methods can be combined.

[0217] The embodiments disclosed herein are illustrative in all respects and should not be considered limiting. The scope of the present invention is defined by the claims, not by the above meaning, and is intended to include all modifications within the meaning and scope of the claims. It goes without saying that the matters or contents described in this specification and drawings can be combined with each other. [Explanation of symbols]

[0218] 1 Structural analysis equipment 2. Ultrasonic microscope 11 Control section 12 Main memory 13 Communications Department 14 Control section 15 Display panel 16 Auxiliary storage 21 Transducer 23 Transmitted Wave 24 Received Wave 31 1st layer 32 2nd layer 33 3rd layer 34 4th layer 35 5th layer 31a Interface 32a Interface 33a Interface 34a Interface 161 Three-dimensional coordinate data generation program 162 Sound Speed Calculation Program 163 Scan Data (1) DB 164 Material or Composition DB 165 Scan Data (2) DB 166 Propagation Time DB 167 Sound Speed DB 168 Three-dimensional coordinate data DB 171 Waveform Analysis Program 169 Recording Media 170 Network 181 Measurement position 201 Infrared Camera 202 Infrared 203 Control device 204 Excitation Signal Source 205 Control Signal 206 Lock-in Signal 207 Probe 208 Terminal electrode 209 Wiring 210 Circuit Board 211 Short circuit 212 Laser Device 214 Laser light 215 Laser Processing Department 216 Observation area 217 X-ray light 218 X-ray imaging device 219 Positioning device (position moving device) 220 X-ray irradiation device 221 Resistance measuring device 301 Charging / discharging section (temperature change section) 303 Signal terminal (signal electrode terminal) 304 Ground (GND) terminal (ground electrode terminal) 305 Equipment (Parts) 306 Display area 307 Gate driver circuit 308 Source driver circuit 309 Gate signal line 310 Source signal line 311 Contact Hole 312 Contact Hole 313 Synchronous Signal Detector

Claims

1. A signal device that applies a lock-in signal to a wiring; an infrared camera that captures an infrared image of the wiring in synchronization with the lock-in signal; a resistance measuring device for measuring the resistance value of the wiring; an X-ray imaging device for taking an X-ray image of the wiring; A wiring inspection method comprising: identifying defective portions of the wiring from differences between the infrared image and the X-ray image and the resistance value.

2. A signal device that applies a lock-in signal to the wiring; an infrared camera that captures an infrared image of the wiring in synchronization with the lock-in signal; a resistance measuring device for measuring the resistance value of the wiring; a laser processing device that exposes the wiring; an X-ray imaging device for taking an X-ray image of the wiring; the laser processing device exposes a third position located between the first position of the wiring and the second position of the wiring; the resistance measuring device measures a first resistance value between the first position and the third position and a second resistance value between the second position and the third position; A wiring inspection method comprising: identifying a defective portion of the wiring from a difference between the infrared image and the X-ray image, the first resistance value, and the second resistance value.

3. A signal device that applies a lock-in signal to the wiring; an infrared camera that captures an infrared image of the wiring in synchronization with the lock-in signal; a resistance measuring device for measuring the resistance value of the wiring; an infrared irradiator that irradiates infrared rays; an X-ray imaging device for taking an X-ray image of the wiring; Irradiating the wiring with the infrared light and taking an infrared image of the wiring; A wiring inspection method comprising: identifying defective portions of the wiring from differences between the infrared image and the X-ray image and the resistance value.

4. A signal device that applies a lock-in signal to the wiring; an infrared camera that captures an infrared image of the wiring in synchronization with the lock-in signal; a resistance measuring device for measuring the resistance value of the wiring; a laser device that irradiates laser light; an X-ray imaging device for taking an X-ray image of the wiring; Irradiating the wiring with the laser light and taking an infrared image of the wiring; A wiring inspection method comprising: identifying defective portions of the wiring from differences between the infrared image and the X-ray image and the resistance value.

5. A signal device that applies a lock-in signal to the wiring; an infrared camera that captures an infrared image of the wiring in synchronization with the lock-in signal; a resistance measuring device for measuring the resistance value of the wiring; an X-ray imaging device for taking an X-ray image of the wiring; A wiring inspection method characterized by identifying defective locations in the wiring from at least one of the differences between the infrared image and the X-ray image and the differences between the infrared image and the wiring layout drawing, and the resistance value.

6. 6. A wiring inspection method according to claim 1, 2, 3, 4 or 5, wherein the wiring is formed on a circuit board.

7. 6. A wiring inspection method according to claim 1, wherein the wiring is a multi-layer wiring formed on a circuit board.

8. the wiring is a signal line formed on a display panel, 6. The wiring inspection method according to claim 1, wherein the lock-in signal is synchronized with a synchronization signal of the display panel.

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