Semiconductor Devices

Abstract

Provided is a voltage detector IC that is mounted onto a PCB substrate and detects a power source voltage, wherein the voltage detector IC makes it possible to reduce the surface area of the PCB substrate and reduce the number of types of mounted components. The invention is characterized by comprising: a first input terminal connected to one potential of a voltage to be monitored; a second input terminal connected to another potential of the voltage to be monitored; a voltage-dividing resistor for dividing the voltage between the first input terminal and the second input terminal; a polarity switching unit connected to the voltage-dividing resistor; and an amplifier circuit connected to the polarity switching unit. The present invention is also characterized in that the polarity switching unit switches, on the basis of polarity setting information, the polarities of a first path and a second path from the voltage-dividing resistor to the amplifier circuit, the paths being provided between the voltage-dividing resistor and the amplifier circuit.

Description

[Technical Field]

[0001] The present invention relates to the configuration of a semiconductor device, and more particularly to a technique that is effective when applied to a voltage sense IC that is mounted on a printed circuit board and detects a power supply voltage. [Background technology]

[0002] Electric vehicles require a function to monitor the high voltage supplied from the battery to drive the motor. To monitor the battery voltage, the voltage node to be monitored must be connected by wiring to an area with a voltage monitoring function.

[0003] Background art in this technical field includes, for example, technology such as that described in Patent Document 1. Patent Document 1 discloses "a voltage detection device that can ensure predetermined insulation performance while suppressing an increase in the mounting area on a printed wiring board when mounting multiple voltage detection circuits on the printed wiring board."

[0004] In Patent Document 1, two voltage detection circuits (a first voltage detection circuit 1 and a second voltage detection circuit 2) are mounted adjacent to each other on a printed wiring board 4, and an input terminal 12 of the first voltage detection circuit 1 is electrically connected to an input terminal 22 of the second voltage detection circuit 2, and a negative voltage is input to both input terminal 12 and input terminal 22 (see FIG. 3 and paragraphs

[0016] -

[0019] of Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2019-178885 Summary of the Invention [Problem to be solved by the invention]

[0006] In the automotive field, reducing the size and weight of various in-vehicle units and reducing the variety and quantity of parts used are ongoing challenges.

[0007] The voltage monitoring function described above is generally composed of electronic components and is mounted on a printed circuit board (hereafter referred to as a "PCB board (Printed Circuit Board)"), so the voltage nodes to be monitored are wired on the PCB board, but to avoid short circuits between nearby wires on the PCB board, it is necessary to ensure a distance between the voltage nodes according to the maximum voltage to be monitored. As a result, the reduced freedom of PCB pattern design due to high-voltage wiring on the PCB board is an obstacle to reducing the area of PCB boards.

[0008] Furthermore, when using two voltage sense ICs to detect two different types of voltage, the PCB pattern must be designed to avoid proximity shorts between the voltage input terminals of the voltage sense ICs. If the arrangement of the positive and negative voltage input terminals of two types of voltage sense ICs is the same, attempting to place the voltage sense ICs side by side means that one of the voltage input terminals of one voltage sense IC and the other of the adjacent voltage sense IC will be on the positive and negative sides, respectively. This means that the voltage sense ICs cannot be placed close to each other in order to avoid proximity shorts between the voltage input terminals, which reduces the freedom of PCB pattern design. In order to place voltage sense ICs close to each other, it is necessary to use two types of voltage sense ICs with different input polarities, in other words, with the arrangement of the positive and negative voltage input terminals of each voltage sense IC being different.

[0009] In the above-mentioned Patent Document 1, a negative voltage is input to input terminal 12 of first voltage detection circuit 1, and a positive voltage is input to input terminal 11. On the other hand, a negative voltage is input to input terminal 22 of second voltage detection circuit 2, and a positive voltage is input to input terminal 21.

[0010] For this reason, the internal circuit configurations of the first voltage detection circuit 1 and the second voltage detection circuit 2 must be different, and the same voltage detection circuit cannot be used.

[0011] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a voltage sense IC that is mounted on a PCB board to detect a power supply voltage, and that allows for a reduction in the area of the PCB board and the number of types of mounted components. [Means for solving the problem]

[0012] In order to solve the above problem, the present invention provides a voltage monitoring circuit comprising: a first input terminal connected to one potential of a voltage to be monitored; a second input terminal connected to the other potential of the voltage to be monitored; a voltage dividing resistor that divides the voltage between the first input terminal and the second input terminal; a polarity switching unit connected to the voltage dividing resistor; and an amplifier circuit connected to the polarity switching unit, wherein the polarity switching unit switches the polarity of a first path and a second path from the voltage dividing resistor provided between the voltage dividing resistor and the amplifier circuit to the amplifier circuit based on polarity setting information. [Effects of the Invention]

[0013] According to the present invention, it is possible to realize a voltage sense IC that is mounted on a PCB board to detect a power supply voltage, which allows for a reduction in the area of the PCB board and a reduction in the variety of mounted components.

[0014] This will enable the PCB board on which the voltage sense IC is mounted to be made smaller and lighter, and costs to be reduced by reducing the number of types of mounted components.

[0015] Problems, configurations, and effects other than those described above will become apparent from the following description of the embodiments. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a diagram showing a schematic configuration of a semiconductor device according to a first embodiment of the present invention. [Figure 2] FIG. 10 is a diagram showing a schematic configuration of a semiconductor device according to a second embodiment of the present invention. [Figure 3] FIG. 10 is a diagram showing a schematic configuration of a semiconductor device according to a third embodiment of the present invention. [Figure 4]FIG. 10 is a diagram showing a schematic configuration of a semiconductor device according to a fourth embodiment of the present invention. [Figure 5A] FIG. 10 is a diagram showing a schematic configuration of a semiconductor device according to a fifth embodiment of the present invention. [Figure 5B] FIG. 5B is a diagram showing a state in which a voltage source of reverse polarity to that in FIG. 5A is connected. [Figure 6A] FIG. 10 is a diagram showing a schematic configuration of a semiconductor device according to a sixth embodiment of the present invention. [Figure 6B] FIG. 6B is a diagram showing a state in which a voltage source of reverse polarity to that of FIG. 6A is connected. [Figure 7A] FIG. 10 is a diagram showing a schematic configuration of a semiconductor device according to a seventh embodiment of the present invention. [Figure 7B] 7B is a diagram showing a semiconductor device mounted on the back surface of the PCB substrate of FIG. 7A. FIG. [Figure 8] FIG. 10 is a diagram showing a schematic configuration of a semiconductor device according to an eighth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, the same components are designated by the same reference numerals, and detailed description of overlapping parts will be omitted. [Example]

[0018] A semiconductor device according to a first embodiment of the present invention will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of a semiconductor device 100 according to the present embodiment.

[0019] As shown in FIG. 1, the semiconductor device 100 (voltage sense IC) of this embodiment mainly comprises an input terminal 11, an input terminal 12, a voltage dividing resistor 13, an amplifier circuit 14, an output terminal 15, and a polarity switching unit 19.

[0020] Input terminal 11 is connected to one potential (for example, positive pole) of voltage source 10 to be monitored, and input terminal 12 is connected to the other potential (for example, negative pole) of voltage source 10.

[0021] The voltage dividing resistor 13 divides the voltage input to the input terminal 11 and the input terminal 12 .

[0022] The amplifier circuit 14 is arranged downstream of the voltage dividing resistor 13 in the direction of the current flowing within the semiconductor device 100, and amplifies information regarding the potential difference between one potential (e.g., positive) and the other potential (e.g., negative) of the voltage source 10 obtained from the voltage dividing resistor 13, and outputs the information as potential difference information from the output terminal 15.

[0023] The voltage dividing resistor 13 and the amplifier circuit 14 are connected by a first path 16 and a second path 17 via a polarity switching unit 19. The voltage dividing resistor 13 inputs information about the potential difference to the amplifier circuit 14 via the first path 16 and the second path 17.

[0024] The polarity switching unit 19 is provided between the voltage dividing resistor 13 and the amplifier circuit 14, and switches the polarity of the first path 16 and the second path 17 to the amplifier circuit 14 according to the input polarity setting information 18, thereby fixing the polarity of the first path 16 and the second path 17.

[0025] When the polarity of the voltage source 10 to be monitored is reversed, that is, when the input terminal 11 is connected to the negative pole and the input terminal 12 is connected to the positive pole as shown by the dotted line in FIG. 1, the polarity of the first path 16 and the second path 17 to the amplifier circuit 14 is switched and fixed by the polarity switching unit 19 in accordance with polarity setting information 18 that switches the polarity of the first path 16 and the second path 17.

[0026] As described above, the semiconductor device 100 (voltage sense IC) of this embodiment includes an input terminal 11 (first input terminal) connected to one potential of the voltage source 10 to be monitored, an input terminal 12 (second input terminal) connected to the other potential of the voltage source 10, a voltage dividing resistor 13 that divides the voltage between the input terminal 11 (first input terminal) and the input terminal 12 (second input terminal), a polarity switching unit 19 connected to the voltage dividing resistor 13, and an amplifier circuit 14 connected to the polarity switching unit 19.The polarity switching unit 19 switches the polarity of the first path 16 and the second path 17 from the voltage dividing resistor 13 to the amplifier circuit 14, which are provided between the voltage dividing resistor 13 and the amplifier circuit 14, based on polarity setting information 18.

[0027] This allows the polarity of the input terminals 11 and 12 of the semiconductor device 100 (voltage sense IC) to be set according to the layout of the wiring on the PCB board and the polarity of the connected battery, making it easier to route the wiring on the PCB board and improving the design freedom of the PCB board. [Example]

[0028] Second Embodiment A semiconductor device according to a second embodiment of the present invention will be described with reference to Fig. 2. Fig. 2 is a diagram showing a schematic configuration of a semiconductor device 103 of this embodiment, which corresponds to a modification of the first embodiment (Fig. 1).

[0029] As shown in FIG. 2, the semiconductor device 103 (voltage sense IC) of this embodiment has a voltage dividing resistor 13 configured with a high-voltage device 101, an amplifier circuit 14, a polarity switching unit 19, a first path 16, and a second path 17 configured with a low-voltage device 102, and the high-voltage device 101 and the low-voltage device 102 configured in a single package, an MCP (Multi Chip Package).

[0030] A voltage dividing resistor 13 that divides the high voltage is configured with a high-voltage device 101 (first chip) that operates at a relatively high voltage, and an amplifier circuit 14 that detects the potential after voltage division by the voltage dividing resistor 13 and a polarity switching unit 19 are configured with a low-voltage device 102 (second chip) that operates at a voltage lower than that of the high-voltage device 101.

[0031] Generally, the element size (chip size) of a high-voltage device is larger than that of a low-voltage device in order to ensure a sufficient withstand voltage. As in this embodiment (FIG. 2), by configuring the voltage dividing resistor 13, to which a high voltage is applied, and the amplifier circuit 14 and polarity switching unit 19, to which a relatively low voltage after voltage division is applied, on separate chips, the chip on which the amplifier circuit 14 and polarity switching unit 19 are mounted can be made smaller (or thinner), thereby making it possible to miniaturize the entire semiconductor device compared to the case in which the entire circuit is configured with high-voltage devices as in embodiment 1 (FIG. 1). [Example]

[0032] A semiconductor device according to a third embodiment of the present invention will be described with reference to Fig. 3. Fig. 3 is a diagram showing a schematic configuration of a semiconductor device 103 of this embodiment, which corresponds to a modification of the second embodiment (Fig. 2).

[0033] As shown in FIG. 3, the semiconductor device 103 (voltage sense IC) of this embodiment includes a polarity setting terminal 120 for inputting polarity setting information 18 to the polarity switching unit 19 from the outside.

[0034] The polarity switching unit 19 switches the polarity of the first path 16 and the second path 17 to the amplifier circuit 14 in accordance with the polarity setting information 18 input via the polarity setting terminal 120, and fixes the polarity of the first path 16 and the second path 17.

[0035] The polarity of the first path 16 and the second path 17 can be selected depending on the voltage state of the polarity setting terminal 120, and when the semiconductor device 103 is mounted on a substrate (not shown), the polarity of the first path 16 and the second path 17 is selected and fixed by connecting the polarity setting terminal 120 to a fixed potential on the substrate.

[0036] With the above configuration, the polarity of the path of the polarity switching unit 19 is fixed when the semiconductor device 103 (voltage sense IC) is mounted on a board, making it possible to prevent erroneous polarity setting. [Example]

[0037] A semiconductor device according to a fourth embodiment of the present invention will be described with reference to Fig. 4. Fig. 4 is a diagram showing a schematic configuration of a semiconductor device 103 according to the fourth embodiment, which corresponds to a modification of the third embodiment (Fig. 3).

[0038] The semiconductor device 103 (voltage sense IC) of this embodiment includes a nonvolatile memory 130 for storing the polarity setting information 18 inside the semiconductor device 103, as shown in FIG.

[0039] The polarity switching unit 19 switches the polarities of the first path 16 and the second path 17 to the amplifier circuit 14 in accordance with the polarity setting information 18 read from the nonvolatile memory 130, and fixes the polarities of the first path 16 and the second path 17.

[0040] With the above configuration, it is possible to suppress the influence of disturbances and noise on the polarity setting information 18. [Example]

[0041] A semiconductor device according to a fifth embodiment of the present invention will be described with reference to Figures 5A and 5B. Figures 5A and 5B are diagrams showing a schematic configuration of a semiconductor device 103 according to this embodiment, which corresponds to a modified example of the second embodiment (Figure 2).

[0042] 5A shows a state in which the positive electrode of voltage source 10a is connected to input terminal 11, and the negative electrode of voltage source 10a is connected to input terminal 12. On the other hand, FIG. 5B shows a state in which the negative electrode of voltage source 10b is connected to input terminal 11, and the positive electrode of voltage source 10b is connected to input terminal 12.

[0043] In the semiconductor device 103 (voltage sense IC) of this embodiment, the polarity switching unit 140 has a plurality of switches that electrically switch the polarities of the first path 16 and the second path 17, as shown in FIGS. 5A and 5B.

[0044] 5A, the positive side of voltage source 10a to be monitored is connected to input terminal 11 of semiconductor device 103, and the negative side of voltage source 10a is connected to input terminal 12 of semiconductor device 103. The state of each switch in polarity switching section 140 is determined based on polarity setting information 18a, and the potential information of input terminal 11, which is resistance-divided by voltage dividing resistor 13, is connected to first path 16, and the potential information of input terminal 12 is connected to second path 17.

[0045] 5B, the positive side of voltage source 10b to be monitored is connected to input terminal 12 of semiconductor device 103, and the negative side of voltage source 10b is connected to input terminal 11 of semiconductor device 103. The state of each switch in polarity switching section 140 is determined based on polarity setting information 18b, and the potential information of input terminal 12, which is resistance-divided by voltage dividing resistor 13, is connected to first path 16, and the potential information of input terminal 11 is connected to second path 17.

[0046] In this embodiment, by mounting a plurality of switches that electrically switch the polarity of the first path 16 and the second path 17 on the low-voltage device (chip) 102 as the polarity switching unit 140, the size of the polarity switching unit can be significantly reduced compared to when a switching switch is configured outside the low-voltage device 102 and the polarity of the first path 16 and the second path 17 is switched based on polarity setting information input from outside, and this makes it possible to miniaturize the entire semiconductor device 103. [Example]

[0047] A semiconductor device according to a sixth embodiment of the present invention will be described with reference to Figures 6A and 6B. Figures 6A and 6B are diagrams showing a schematic configuration of a semiconductor device 103 according to this embodiment, which corresponds to a modified example of the fifth embodiment (Figures 5A and 5B).

[0048] In this embodiment, a case where the semiconductor device 103 is mounted on a PCB substrate 153 will be described.

[0049] In FIG. 6A, the potential on the positive side of voltage source 150a to be monitored is connected to terminal 154 of PCB board 153 by connection wiring 151 such as a harness or a bus bar, and the potential on the negative side of voltage source 150a is connected to terminal 155 of PCB board 153 by connection wiring 152 such as a harness or a bus bar.

[0050] Terminal 154 of PCB board 153 and input terminal 11 of semiconductor device 103 are connected by wiring 156 on PCB board 153, and terminal 155 of PCB board 153 and input terminal 12 of semiconductor device 103 are connected by wiring 157 on PCB board 153.

[0051] Based on the polarity setting information 18a, the state of each switch in the polarity switching unit 140 is determined, and the potential information of the input terminal 11 divided by the voltage dividing resistor 13 is connected to the first path 16, and the potential information of the input terminal 12 is connected to the second path 17.

[0052] In FIG. 6B, the potential on the positive side of the voltage source 150b to be monitored is connected to a terminal 155 of a PCB board 153 by a connection wiring 152 such as a harness or a bus bar, and the potential on the negative side of the voltage source 150b is connected to a terminal 154 of the PCB board 153 by a connection wiring 151 such as a harness or a bus bar.

[0053] Terminal 154 of PCB board 153 and input terminal 11 of semiconductor device 103 are connected by wiring 156 on PCB board 153, and terminal 155 of PCB board 153 and input terminal 12 of semiconductor device 103 are connected by wiring 157 on PCB board 153.

[0054] Based on the polarity setting information 18b, the state of each switch in the polarity switching unit 140 is determined, and the potential information of the input terminal 12 divided by the voltage dividing resistor 13 is connected to the first path 16, and the potential information of the input terminal 11 is connected to the second path 17.

[0055] As described above, the semiconductor device 103 of this embodiment is mounted on the PCB board 153 by switching the polarity of the first path 16 and the second path 17 based on the polarity of the two potential signals input to the input terminals 11 and 12.

[0056] As in this embodiment, by mounting semiconductor device 103 having polarity switching unit 140 on PCB substrate 153 as a voltage sense IC, it is possible to improve the degree of freedom in arranging the voltage source to be monitored and semiconductor device 103. It is also possible to improve the degree of freedom in wiring connection wiring 151, 152 such as harnesses or bus bars which are voltage nodes to be monitored, and wiring 156, 157 on PCB substrate 153. [Example]

[0057] Seventh Embodiment A semiconductor device according to a seventh embodiment of the present invention will be described with reference to Figures 7A and 7B. Figures 7A and 7B are diagrams showing a schematic configuration of a semiconductor device 103 according to this embodiment, which corresponds to a modified example of the sixth embodiment (Figures 6A and 6B).

[0058] In this embodiment, a case where the semiconductor device 103 is mounted on either the front surface (side A) or the back surface (side B) of the PCB substrate 153, or on both surfaces, will be described.

[0059] 7A has basically the same configuration as FIG. 6A, but to indicate that the semiconductor device 103 is mounted on the front surface (side A) of the PCB substrate 153, "PCB-A side" is written on the PCB substrate 153. Also, to indicate the orientation of the semiconductor device 103, an index mark is written on the upper right of the semiconductor device 103.

[0060] Figure 7B shows a state in which semiconductor device 103 is mounted on the back surface (side B) of PCB substrate 153 of Figure 7A. Figure 7B shows a case in which Figure 7A is folded back on the X-axis, with the polarity of voltage source 150, which is the monitoring target, remaining the same as in Figure 7A. With respect to Figure 7A, semiconductor device 103 is rotated 180° (turned upside down) and mounted on the back surface (side B) of PCB substrate 153, and the state of each switch in polarity switching unit 140 is changed from that in Figure 7A based on polarity setting information 18b.

[0061] This embodiment makes it possible to select the mounting surface of semiconductor device 103 on PCB substrate 153, thereby improving the degree of freedom in arranging the voltage source to be monitored and semiconductor device 103. It also improves the degree of freedom in wiring connection wiring 151, 152 such as harnesses or bus bars that are voltage nodes to be monitored, and wiring 156, 157 on PCB substrate 153. [Example]

[0062] A semiconductor device according to Example 8 of the present invention will be described with reference to Fig. 8. Fig. 8 is a diagram showing a schematic configuration of a semiconductor device 103 of this example, which corresponds to a modified example of Example 6 (Figs. 6A and 6B).

[0063] In this embodiment, a case will be described in which two semiconductor devices 103 shown in FIGS. 6A and 6B are mounted on the same surface of the same PCB substrate 153.

[0064] In FIG. 8, the upper semiconductor device 103 has the same configuration as that in FIG. 6A, and the lower semiconductor device 103 has the same configuration as that in FIG. 6B.

[0065] As shown in Figure 8, when detecting the potential difference between two types of voltage sources 150a and 150b, if one of the two types of potential differences is at the same potential (in Figure 8, the potential of the negative electrode of voltage source 150a and the potential of the negative electrode of voltage source 150b are at the same potential), by changing the connection to amplifier circuit 14 that detects the potential difference between the two potential signals between the two semiconductor devices 103, it is possible to detect two types of potential differences with one type of semiconductor device 103.

[0066] In FIG. 8, the two semiconductor devices 103 have input terminals 12 and 11 at the same potential arranged adjacent to each other, and are connected by wiring 157 and 156 on the PCB substrate.

[0067] As described above, in this embodiment, multiple semiconductor devices 103 are mounted on the same surface of the same PCB substrate 153, and the polarity of the first path 16 and the second path 17 of at least some of the semiconductor devices 103 is different from that of the other semiconductor devices 103.

[0068] As in the present embodiment, when detecting two different types of voltage, for example, two semiconductor devices 103 of the same type, each having a polarity switching unit 140, are used, and the polarity is selected so that the arrangement of the input terminals 11 and 12 of each semiconductor device 103 is optimized, thereby making it possible to arrange the two semiconductor devices 103 closely. Also, as in the other embodiments, it is possible to improve the degree of freedom in the wiring of the connection wirings 151 and 152, such as harnesses or bus bars, which are voltage nodes to be monitored, and the wirings 156 and 157 on the PCB board 153.

[0069] The present invention is not limited to the above-described embodiments and includes various modifications. For example, the above-described embodiments have been described in detail to clearly explain the present invention, and the present invention is not necessarily limited to those including all of the described configurations. Furthermore, it is possible to replace part of the configuration of one embodiment with the configuration of another embodiment, or to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is possible to add, delete, or replace part of the configuration of each embodiment with other configurations. [Explanation of symbols]

[0070] 10, 10a, 10b, 150, 150a, 150b...voltage source, 11, 12...input terminal, 13...voltage dividing resistor, 14...amplifier circuit, 15...output terminal, 16...first path, 17...second path, 18, 18a, 18b...polarity setting information, 19, 140...polarity switching unit, 100, 103...semiconductor device (voltage sense IC), 101...high voltage device, 102...low voltage device, 120...polarity setting terminal, 130...non-volatile memory, 151, 152...connecting wiring, 153...PCB board, 154, 155...terminal of PCB board, 156, 157...wiring on PCB board.

Claims

1. a first input terminal connected to one potential of a voltage to be monitored; a second input terminal connected to the other potential of the voltage to be monitored; a voltage dividing resistor that divides a voltage between the first input terminal and the second input terminal; a polarity switching unit connected to the voltage dividing resistor; an amplifier circuit connected to the polarity switching unit, The polarity switching unit switches polarities of a first path and a second path from the voltage dividing resistor to the amplifier circuit, the first path and the second path being provided between the voltage dividing resistor and the amplifier circuit, based on polarity setting information.

2. 2. The semiconductor device according to claim 1, the semiconductor device is configured as a multi-chip package (MCP) in which a first chip and a second chip that operates at a lower voltage than the first chip are contained in one package, the voltage dividing resistor is disposed on the first chip; The semiconductor device is configured such that the polarity switching unit and the amplifier circuit are disposed on the second chip.

3. 2. The semiconductor device according to claim 1, a polarity setting terminal for inputting the polarity setting information; The polarity of the first path and the second path can be selected depending on the voltage state of the polarity setting terminal, When the semiconductor device is mounted on a substrate, the polarity setting terminal is connected to a fixed potential on the substrate, thereby selecting and fixing the polarities of the first path and the second path.

4. 2. The semiconductor device according to claim 1, A semiconductor device including a nonvolatile memory that stores the polarity setting information.

5. 2. The semiconductor device according to claim 1, The polarity switching unit includes a plurality of switches that electrically switch the polarities of the first path and the second path.

6. 2. The semiconductor device according to claim 1, A semiconductor device mounted on a PCB substrate, the polarities of the first path and the second path being switched based on the polarities of two potential signals input to the first input terminal and the second input terminal.

7. 7. The semiconductor device according to claim 6, The semiconductor device is mounted on either the front surface or the back surface of the PCB substrate, or on both surfaces.

8. 2. The semiconductor device according to claim 1, A plurality of the semiconductor devices are mounted on the same surface of the same PCB substrate, The polarities of the first path and the second path of at least some of the semiconductor devices are different from those of the other semiconductor devices.

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