Detection device

Abstract

To provide a detection device which can increase a frame rate of a detection operation and reduce a load of arithmetic processing in a configuration that includes a plurality of sensors.SOLUTION: A detection device comprises: a sensor part which has a detection area that is divided into a plurality of partial detection areas; a control circuit which has a first mode of acquiring data for each of the plurality of partial detection areas on the basis of a detection value acquired for each of the plurality of partial detection areas, and a second mode of selecting the partial detection area that has the relatively large signal intensity of the data acquired in the first mode in the plurality of partial detection areas, and acquiring biological data of a detection object body on the basis of the detection value acquired by connecting the selected partial detection areas in parallel to each other; and an amplification circuit to which the detection value acquired in the second mode is input.SELECTED DRAWING: Figure 10

Description

[Technical Field]

[0001] The present invention relates to a detection device. [Background technology]

[0002] Patent Document 1 describes an optical sensor in which a plurality of photoelectric conversion elements such as photodiodes are arranged on a semiconductor substrate. The optical sensor can detect biological information by detecting changes in the signal output from the photoelectric conversion elements according to the amount of light irradiated.

[0003] Patent Document 2 describes a configuration for obtaining blood oxygen saturation (hereinafter referred to as blood oxygen saturation (SpO2)) using a pulse wave obtained using infrared light and a pulse wave obtained using red light. Blood oxygen saturation (SpO2) is the ratio of the amount of oxygen actually bound to hemoglobin to the total amount of oxygen assumed to be bound to all hemoglobin in the blood. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] US Patent Application Publication No. 2018 / 0012069 [Patent Document 2] Japanese Patent Application Publication No. 2019-180861 Summary of the Invention [Problem to be solved by the invention]

[0005] For example, when acquiring subcutaneous information such as pulse waves, it may not always be possible to acquire highly accurate data due to the distribution of blood vessels under the skin. Furthermore, when acquiring time-varying data such as pulse waves with high accuracy, detection must be performed at a high frame rate. While it is conceivable to extract highly accurate data from data acquired by multiple optical sensors, a configuration with multiple optical sensors may result in a reduced frame rate due to the need to acquire detection values ​​from multiple optical sensors. Furthermore, the computational load may increase when calculating pulse waves and blood oxygen saturation (SpO2).

[0006] An object of the present invention is to provide a detection device having a configuration with multiple sensors that can achieve a high frame rate for detection operations and a reduced load on calculation processing. [Means for solving the problem]

[0007] A detection device according to one embodiment of the present invention comprises a sensor unit having a detection area divided into a plurality of partial detection areas, a control circuit having a first mode in which data for each of the plurality of partial detection areas is acquired based on detection values ​​acquired for each of the plurality of partial detection areas, and a second mode in which a partial detection area from among the plurality of partial detection areas in which the signal strength of the data acquired in the first mode is relatively high is selected, and the selected partial detection areas are connected in parallel to acquire biological data of the subject to be detected based on the detection values ​​acquired, and an amplifier circuit to which the detection values ​​acquired in the second mode are input. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view showing a detection device according to an embodiment. [Figure 2] FIG. 2 is a diagram showing an example of a detection region. [Figure 3] FIG. 3 is a conceptual diagram showing an example of a basic configuration for explaining the basic detection operation of the detection device. [Figure 4] FIG. 4 is a timing waveform diagram showing an example of a basic detection operation of the detection device. [Figure 5]FIG. 5 is a block diagram showing an example of a circuit configuration of a detection device according to a first example of the comparative example. [Figure 6] FIG. 6 is a block diagram showing an example of a circuit configuration of a detection device according to a second example of the comparative example. [Figure 7A] FIG. 7A is a timing waveform diagram showing an example of the detection operation of the detection device according to the comparative example. [Figure 7B] FIG. 7B is a timing waveform diagram showing an example of the detection operation of the detection device according to the comparative example. [Figure 8A] FIG. 8A is a diagram showing an example of a pulse waveform acquired in each partial detection region. [Figure 8B] FIG. 8B is a diagram showing an example of a pulse waveform acquired in each partial detection region. [Figure 8C] FIG. 8C is a diagram showing an example of a pulse waveform acquired in each partial detection region. [Figure 9A] FIG. 9A is a diagram showing a first example of a detection region according to the first embodiment. [Figure 9B] FIG. 9B is a diagram showing a second example of the detection region according to the first embodiment. [Figure 9C] FIG. 9C is a diagram showing a third example of the detection region according to the first embodiment. [Figure 10] FIG. 10 is a block diagram showing an example of a circuit configuration of the detection device according to the first embodiment. [Figure 11] FIG. 11 is a flowchart illustrating an example of a detection processing flow in the detection device according to the first embodiment. [Figure 12] FIG. 12 is a timing waveform diagram showing an example of operation in the process of acquiring data on the entire detection region of the detection device according to the first embodiment. [Figure 13] FIG. 13 is a diagram showing a selection state in the partial detection area selection process of the detection device according to the first embodiment. [Figure 14] FIG. 14 is a timing waveform diagram showing an example of operation in the partial detection area setting process of the detection device according to the first embodiment. [Figure 15]FIG. 15 is a timing waveform diagram showing an example of operation in the pulse wave data acquisition process of the detection device according to the first embodiment. [Figure 16] FIG. 16 is a diagram illustrating an example of a circuit configuration of a detection circuit according to the first embodiment. [Figure 17] FIG. 17 is a block diagram showing an example of a circuit configuration of a detection device according to a modified example of the first embodiment. [Figure 18] FIG. 18 is a diagram illustrating an example of a schematic configuration of a detection device according to the second embodiment. [Figure 19] FIG. 19 is a block diagram illustrating an example of a circuit configuration of a partial detection area according to the second embodiment. [Figure 20] FIG. 20 is a diagram showing an example of a specific circuit configuration of the first driving circuit. [Figure 21] FIG. 21 is a diagram showing an example of a specific circuit configuration of the second driving circuit. [Figure 22] FIG. 22 is a timing waveform diagram showing an example of operation in the process of acquiring data on the entire detection region of the detection device according to the second embodiment. [Figure 23] FIG. 23 is a timing waveform diagram showing an example of operation in the partial detection area setting process of the detection device according to the second embodiment. [Figure 24] FIG. 24 is a conceptual diagram showing an example of a DATA signal set in the partial detection area setting process of the detection device according to the second embodiment. [Figure 25] FIG. 25 is a timing waveform diagram showing an example of operation in the pulse wave data acquisition process of the detection device according to the first embodiment. [Figure 26] FIG. 26 is a block diagram showing an example of the circuit configuration of a partial detection area according to a modified example of the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Modes (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be appropriately combined. Furthermore, the disclosure is merely an example, and appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the invention are naturally included within the scope of the present invention. Furthermore, for clarity of explanation, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each figure, elements similar to those described above with reference to the previous figures may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0010] FIG. 1 is a plan view showing a detection device according to an embodiment. As shown in FIG. 1, the detection device 1 includes a sensor substrate 21, a sensor unit 10, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source 61, and a second light source 62. While FIG. 1 illustrates an example in which a first light source substrate 51 is provided with a plurality of first light sources 61 and a second light source substrate 52 is provided with a plurality of second light sources 62, the arrangement of the first light sources 61 and the second light sources 62 shown in FIG. 1 is merely an example and can be modified as appropriate. For example, a plurality of first light sources 61 and a plurality of second light sources 62 may be arranged on each of the first light source substrate 51 and the second light source substrate 52. In this case, a group including a plurality of first light sources 61 and a group including a plurality of second light sources 62 may be arranged side by side in the second direction Dy, or the first light sources 61 and the second light sources 62 may be arranged alternately in the second direction Dy. Furthermore, the number of light source substrates on which the first light source 61 and the second light source 62 are provided may be one or three or more. Specific examples of the arrangement of the first light source 61 and the second light source 62 will be described later.

[0011] The detection device 1 is electrically connected to a host 200. The host 200 is, for example, a higher-level control device of an apparatus (not shown) to which the detection device 1 is applied. The host 200 performs a predetermined process for acquiring biological information based on data output from the detection device 1.

[0012] A control board 121 is electrically connected to the sensor substrate 21 via a flexible printed circuit board 71. A detection circuit 48 is provided on the flexible printed circuit board 71. A control circuit 122, a power supply circuit 123, and an output circuit 126 are provided on the control board 121.

[0013] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 detects the output value of the sensor unit 10.

[0014] The control circuit 122 is, for example, a control integrated circuit (IC) that outputs a logic control signal, and may be, for example, a programmable logic device (PLD) such as a field programmable gate array (FPGA).

[0015] The control circuit 122 supplies control signals to the sensor unit 10 and the detection circuit 48. The control circuit 122 also supplies control signals to the first light source 61 and the second light source 62. In the present disclosure, the control circuit 122 is a component that executes each process of the overall detection operation of the detection device 1, including a total detection area data acquisition process, a partial detection area selection process, a partial detection area setting process, and a pulse wave data acquisition process, which will be described later, based on the detection values ​​acquired by the detection circuit 48.

[0016] The power supply circuit 123 supplies power supply voltages for each part, such as a sensor power supply potential VDD_ORG, a reference potential Vref (see FIG. 3, etc.), a control high potential VDD, and a control low potential VSS (see FIG. 17, etc.), to the sensor unit 10 and the detection circuit 48. The power supply circuit 123 also supplies a light source drive voltage to the first light source 61 and the second light source 62.

[0017] The output circuit 126 is, for example, a USB controller IC, and controls communication between the control circuit 122 and the host 200 .

[0018] The sensor substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where a plurality of optical sensors PD (see FIG. 3) of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the end of the sensor substrate 21, where no optical sensors PD are provided.

[0019] Fig. 2 is a diagram showing an example of a detection area. The detection area AA is divided into a plurality of partial detection areas PAA, and an optical sensor PD is provided in each of the plurality of partial detection areas PAA. In the example shown in Fig. 2, the detection area AA is divided into three in the first direction Dx and three in the second direction Dy, resulting in nine partial detection areas PAA.

[0020] The first direction Dx is a direction in a plane parallel to the sensor substrate 21. The second direction Dy is a direction in a plane parallel to the sensor substrate 21 and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect with the first direction Dx without being perpendicular to it. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy and is a normal direction to the sensor substrate 21.

[0021] The plurality of first light sources 61 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of second light sources 62 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0022] The plurality of first light sources 61 and the plurality of second light sources 62 may be, for example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs). The plurality of first light sources 61 and the plurality of second light sources 62 emit first light and second light of different wavelengths, respectively.

[0023] The first light emitted from the first light source 61 is reflected by the surface of the object to be detected, such as the subject's finger or wrist, and enters the sensor unit 10. This allows the sensor unit 10 to detect the shape of the projections and recesses on the surface of the finger Fg or the like, thereby detecting a fingerprint. The second light emitted from the second light source 62 is reflected by the inside of the finger Fg or the like, or passes through the finger Fg or the like, and enters the sensor unit 10. This allows the sensor unit 10 to detect information about the inside of the subject's finger, wrist, or the like. The information about the body of the subject is, for example, the subject's pulse wave, pulse rate, blood vessel image, etc. That is, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects blood vessel patterns such as veins.

[0024] The first light may have a wavelength of 520 nm or more and 600 nm or less, for example, approximately 500 nm, and the second light may have a wavelength of 780 nm or more and 950 nm or less, for example, approximately 850 nm. In this case, the first light is blue or green visible light (blue light or green light), and the second light is infrared light. The sensor unit 10 can detect a fingerprint based on the first light emitted from the first light source 61. The second light emitted from the second light source 62 is reflected or transmitted / absorbed inside the object to be detected and then enters the sensor unit 10. This allows the sensor unit 10 to detect biometric data such as a pulse wave and a blood vessel image (blood vessel pattern) as information about the internal living body of the subject's finger, wrist, etc.

[0025] Alternatively, the first light may have a wavelength of 600 nm or more and 700 nm or less, for example, about 660 nm, and the second light may have a wavelength of 780 nm or more and 950 nm or less, for example, about 850 nm. In this case, based on the first light emitted from the first light source 61 and the second light emitted from the second light source 62, the sensor unit 10 can detect information about the living body, such as pulse waves, pulse rates, and blood vessel images, as well as blood oxygen levels. In this way, the detection device 1 has the first light source 61 and multiple second light sources 62, and can detect various pieces of information about the living body by performing detection based on the first light and detection based on the second light.

[0026] Fig. 3 is a conceptual diagram showing an example of a basic configuration for explaining the basic detection operation of the detection device, and Fig. 4 is a timing waveform diagram showing an example of the basic detection operation of the detection device.

[0027] The optical sensor PD provided in the partial detection area PAA is an organic photodiode (OPD), and outputs an electrical signal to the detection circuit 48 in response to the irradiated light.

[0028] The detection circuit 48 has an amplifier circuit 42 and an A / D conversion circuit 43 (hereinafter also referred to as "ADC 43") as basic components for performing a detection operation.

[0029] 4, the detection device 1 has a reset period RST, an exposure period CH, and a readout period RD. The detection device 1 performs a detection operation through a series of transition processes of the reset period RST, the exposure period CH, and the readout period RD, which will be described below.

[0030] Specifically, the power supply circuit 123 supplies the sensor power supply potential VDD_ORG to the cathode of the optical sensor PD over the reset period RST, the exposure period CH, and the readout period RD. Also, over the reset period RST, the exposure period CH, and the readout period RD, the first light (or the second light) is emitted from the first light source 61 (or the second light source 62).

[0031] During the reset period RST, the control circuit 122 controls to turn on the switches RSW and SSW of the detection circuit 48. As a result, the reference potential Vref applied to the non-inverting input (+) of the amplifier circuit 42 is supplied to the anode of the optical sensor PD, and the anode-cathode of the optical sensor PD is reverse biased. At this time, an electric charge corresponding to the reverse bias voltage is stored in the optical sensor PD.

[0032] The control circuit 122 controls the switch SSW to be turned off during the exposure period CH, thereby gradually discharging the electric charge stored in the photosensor PD due to the light irradiation.

[0033] During the readout period RD, the control circuit 122 controls the switch SSW to be on and the switch RSW to be off. As a result, the charge stored in the photosensor PD is transferred to the negative feedback capacitance Cfb of the amplifier circuit 42 of the detection circuit 48, and the output voltage of the amplifier circuit 42 becomes a voltage corresponding to the charge stored in the negative feedback capacitance Cfb. The output voltage of the amplifier circuit 42 is converted into a digital value by the ADC 43.

[0034] Fig. 5 is a block diagram showing an example of the circuit configuration of a detection device according to a first example of a comparative example. Fig. 6 is a block diagram showing an example of the circuit configuration of a detection device according to a second example of a comparative example. In Figs. 5 and 6, the sensor unit 10 has nine partial detection areas PAA, in which the detection area AA is divided into three in the first direction Dx and three in the second direction Dy.

[0035] 5 and 6, in the comparative example, the anodes of the optical sensors PD provided in each of the partial detection areas PAA(1), PAA(2), ..., PAA(9) are bundled and connected via switch transistors SWTR, respectively, and connected to a detection circuit 48. While Fig. 5 shows an example in which a switch transistor SWTR is provided in each of the partial detection areas PAA(1), PAA(2), ..., PAA(9), an aspect in which a switch transistor SWTR is provided in the peripheral area GA may also be used, as shown in Fig. 6.

[0036] In the comparative example shown in FIGS. 5 and 6, a SEL (SEL(1), SEL(2), . . . , SEL(9)) signal is supplied from the control circuit 122 to the gate of each switch transistor SWTR.

[0037] The detection operation in the comparative example shown in Figures 5 and 6 will be described with reference to Figures 7A and 7B. Figures 7A and 7B are timing waveform diagrams showing an example of the detection operation of the detection device according to the comparative example.

[0038] In the following explanation, as a specific example of information about a living body acquired by the detection device 1, an example of acquiring a pulse wave, which is biological information for calculating oxygen saturation in the blood (hereinafter referred to as blood oxygen saturation (SpO2)), will be explained.

[0039] When acquiring a person's blood oxygen saturation (SpO2), a pulse wave acquired using the first light (red light) and a pulse wave acquired using the second light (infrared light) are used. Specifically, for example, the first light emitted from the first light source 61 is red visible light (red light) of 600 nm or more and 700 nm or less, specifically, about 660 nm, and the second light emitted from the second light source 62 is infrared light of 780 nm or more and 950 nm or less, specifically, about 850 nm.

[0040] 7A, the control circuit 122 sequentially controls each SEL signal to a high potential (hereinafter also referred to as "H control") during one frame period 1F in which the first light source 61 is turned on to emit the first light (red light), and performs the above-mentioned detection operation during the high period (hereinafter also referred to as "H period") of each SEL signal. As a result, first detection values ​​DET1(1), DET1(2), ..., DET1(9) are obtained for each of the partial detection areas PAA(1), PAA(2), ..., PAA(9).

[0041] Furthermore, in the following one frame period 1F, the control circuit 122 turns on the second light source 62 to irradiate the second light (infrared light), sequentially controls each SEL signal to H, and performs the above-mentioned detection operation during the H period of each SEL signal. As a result, second detection values ​​DET2(1), DET2(2), ..., DET2(9) are obtained for each partial detection area PAA(1), PAA(2), ..., PAA(9).

[0042] In this way, by alternating frames in which the first light source 61 is turned on and the first light (red light) is irradiated and frames in which the second light source 62 is turned on and the second light (infrared light) is irradiated, it is possible to calculate blood oxygen saturation (SpO2) using pulse wave data generated by the first detection values ​​DET1(1), DET1(2), ..., DET1(9) obtained by the first light (red light) and pulse wave data generated by the second detection values ​​DET2(1), DET2(2), ..., DET2(9) obtained by the second light (infrared light).

[0043] Here, the calculation of blood oxygen saturation (SpO2) uses the pulse wave acquired by the first light (red light) and the pulse wave acquired by the second light (infrared light), so it is desirable that there is a small difference in detection timing between the first detection value DET1 acquired by the first light and the second detection value DET2 acquired by the second light.

[0044] 7A , the first detection values ​​DET1(1), DET1(2), . . . , DET1(9) and the second detection values ​​DET2(1), DET2(2), . . . , DET2(9) are acquired for all partial detection areas PAA(1), PAA(2), . . . , PAA(9) within the detection area AA, resulting in a larger difference in detection timing between the first detection value DET1 acquired in a frame in which the first light source 61 is turned on and irradiates the first light (red light) and the second detection value DET2 acquired in a frame in which the second light source 62 is turned on and irradiates the second light (infrared light). Furthermore, the greater the number of divisions of the detection area AA, the more significant the difference in detection timing between the first detection value DET1 acquired by the first light and the second detection value DET2 acquired by the second light. In other words, the greater the number of divisions into the detection area AA, that is, the higher the surface density of the optical sensors PD in the detection area AA, the more difficult it becomes to improve the frame rate in the detection operation.

[0045] Furthermore, if the first detection values ​​DET1(1), DET1(2), ···, DET1(9) and the second detection values ​​DET2(1), DET2(2), ···, DET2(9) for all partial detection areas PAA(1), PAA(2), ···, PAA(9) within the detection area AA are transmitted to the host 200 and the blood oxygen saturation (SpO2) is calculated in the host 200, the amount of transmitted data and the load on the calculation processing on the host 200 side may increase.

[0046] In contrast to the detection operation example shown in Fig. 7A, in the detection operation example shown in Fig. 7B, a readout period RD and a reset period RST are sequentially provided for each partial detection area PAA(p) during one frame period 1F, and the period until the readout period RD of the next frame is set as the exposure period CH. Therefore, the period during which the readout period RD and reset period RST of another partial detection area PAA are provided can be set as the exposure period CH. Therefore, one frame period can be shortened compared to the detection operation example shown in Fig. 7A.

[0047] 8A, 8B, and 8C are diagrams showing examples of pulse waveforms acquired in each partial detection region. In Fig. 8A, 8B, and 8C, the horizontal axis represents time, and the vertical axis represents the data value of the pulse wave data.

[0048] The signal strength of the pulse wave data acquired in each partial detection area PAA within the detection area AA varies depending on the distribution of blood vessels under the skin of the subject's finger. The signal strength of the pulse wave data is represented by the AC (alternating current) component of the pulse wave data shown in Figures 8A, 8B, and 8C. Specifically, for example, the signal strength represented by the AC component of the pulse wave data shown in Figure 8B is relatively greater than the signal strength represented by the AC component of the pulse wave data shown in Figure 8A and the signal strength represented by the AC component of the pulse wave data shown in Figure 8C.

[0049] In the present disclosure, of the plurality of partial detection areas PAA, for example, as shown in Fig. 8B, a partial detection area PAA in which the signal strength of the acquired pulse wave data is relatively high is selected, and the optical sensors PD of the selected partial detection area PAA are connected in parallel to perform detection operation, thereby achieving a high frame rate for the detection operation when acquiring pulse wave data and reducing the load of calculation processing.

[0050] Below, we will explain a configuration and operation that, in a configuration having multiple optical sensors PD, can achieve a higher frame rate in the detection operation and a reduced load on the calculation process when acquiring pulse wave data compared to the detection operation shown in FIG. 7B of the above-mentioned comparative example.

[0051] (Embodiment 1) Fig. 9A is a diagram showing a first example of a detection region according to embodiment 1. Fig. 9B is a diagram showing a second example of a detection region according to embodiment 1. Fig. 9C is a diagram showing a third example of a detection region according to embodiment 1.

[0052] In the first example shown in Fig. 9A, the detection area AA is divided into p parts in the first direction Dx and P / p parts in the second direction Dy into P partial detection areas PAA. The division of the detection area AA is not limited to the embodiment shown in Fig. 9A. For example, the detection area AA may be divided into P parts in the first direction Dx as shown in Fig. 9B, or may be divided into P parts in the second direction Dy as shown in Fig. 9C.

[0053] Fig. 10 is a block diagram showing an example of the circuit configuration of the detection device according to embodiment 1. As shown in Fig. 10, in the configuration according to embodiment 1, each partial detection area PAA has a flip-flop circuit 11 (hereinafter also referred to as "FF11"). An example of FF11 is a D flip-flop circuit. The FF11 included in each partial detection area PAA(p) are cascade-connected to form a shift register circuit. The configuration of the shift register circuit is not limited to this.

[0054] An STV signal and a CK signal are input to FF11 in the partial detection area PAA(1). An output of the previous stage FF11 and a CK signal are input to FF11 in the partial detection area PAA(2) and subsequent areas. An ENB signal is selectively input to the switch transistor SWTR in each partial detection area PAA(p) by the SRout signal and xSRout signal output from FF11. The STV signal, CK signal, and ENB signal are output from the control circuit 122. The xSRout signal is a logically inverted signal of the SRout signal.

[0055] 11 is a flowchart showing an example of a detection processing flow in the detection device according to embodiment 1. The entire detection area data acquisition processing (step S101), the partial detection area selection processing (step S102), the partial detection area setting processing (step S103), and the pulse wave data acquisition processing (step S104) shown in FIG. 11 are mainly executed by the control circuit 122. In the present disclosure, the entire detection area data acquisition processing (step S101) corresponds to the "first mode." Furthermore, in the present disclosure, the partial detection area selection processing (step S102), the partial detection area setting processing (step S103), and the pulse wave data acquisition processing (step S104) correspond to the "second mode."

[0056] 12 is a timing waveform diagram showing an example of operation in the entire detection area data acquisition process of the detection device according to embodiment 1. In the entire detection area data acquisition process (step S101), the control circuit 122 continuously lights up either the first light source 61 or the second light source 62, and acquires pulse wave data of all partial detection areas PAA(p) within the detection area AA.

[0057] Specifically, the control circuit 122 acquires detection values ​​DET(p) for multiple frames in each partial detection area PAA(p) within the detection area AA. The number of frames F when acquiring the detection values ​​DET(p) for multiple frames is set to a number that allows multiple (e.g., about 10) pulse wave peaks to be acquired.

[0058] Fig. 13 is a diagram showing a selection state in the partial detection area selection process of the detection device according to embodiment 1. In the partial detection area selection process (step S102), the control circuit 122 selects the partial detection area PAA(p) that has a relatively high signal strength of the acquired data from the partial detection area PAA(p). Fig. 13 shows an example in which the detection area AA is divided into 16 parts, and the partial detection areas PAA(4), PAA(7), PAA(11), and PAA(16) are selected.

[0059] Specifically, control circuit 122 generates time domain data DAT(p) indicating time transition of detection values ​​DET(p) for multiple frames in each partial detection area PAA(p) within detection area AA, and selects a partial detection area PAA to be used in the pulse wave data acquisition process (step S104) based on the ratio (DAT(AC) / DAT(DC)×100[%]) of AC component DAT(AC) to DC (direct current) component DAT(DC) of each time domain data DAT(p).

[0060] The AC component DAT(AC) of the time domain data DAT(p) can be obtained, for example, by subjecting the time domain data DAT(p) to HPF (High Pass Filter) processing. This results in the AC component DAT(AC) from which the DC component DAT(DC) of the time domain data DAT(p) has been removed. Furthermore, the DC component DAT(DC) of the time domain data DAT(p) can be obtained, for example, by subjecting the time domain data DAT(p) to LPF (Low Pass Filter) processing. This results in the DC component DAT(DC) from which the AC component DAT(AC) of the time domain data DAT(p) has been removed.

[0061] The control circuit 122 selects, for example, a partial detection area PAA(p) in which the ratio of the AC component DAT(AC) to the DC (direct current) component DAT(DC) of the time domain data DAT(p) (DAT(AC) / DAT(DC)×100[%]) is greater than or equal to a predetermined value (for example, greater than or equal to 1[%]).

[0062] The manner of selecting the partial detection area PAA in the partial detection area selection process (step S102) is not limited to the above. For example, the control circuit 122 may select, from the partial detection areas PAA(p), a partial detection area PAA whose ratio (DAT(AC) / DAT(DC)×100[%]) of the AC component DAT(AC) to the DC (direct current) component DAT(DC) of the time domain data DAT(p) is included in a predetermined number Q (for example, Q=P / 10) of the highest ratios.

[0063] 14 is a timing waveform diagram showing an example of operation of the partial detection area setting process of the detection device according to the first embodiment. In the partial detection area setting process (step S103), the control circuit 122 writes a setting value to FF11 of each partial detection area PAA(p). Specifically, the control circuit 122 writes a setting value of "1" to FF11 of the partial detection area selected in the partial detection area selection process (step S102) (in the example shown in FIG. 13, the partial detection areas PAA(4), PAA(7), PAA(11), and PAA(16)), and writes a setting value of "0" to FF11 of the other unselected partial detection areas (in the example shown in FIG. 13, the partial detection areas PAA(1), PAA(2), PAA(3), PAA(5), PAA(6), PAA(8), PAA(9), PAA(10), PAA(12), PAA(13), PAA(14), and PAA(15)).

[0064] The control circuit 122 sets a setting value ("0" or "1") for each partial detection area PAA(p) in the STV signal and outputs it sequentially. As a result, the corresponding setting value is written into FF11 of each partial detection area PAA(p).

[0065] 15 is a timing waveform diagram showing an example of operation of the pulse wave data acquisition process of the detection device according to embodiment 1. In the pulse wave data acquisition process (step S104), the control circuit 122 controls the STV signal and the CK signal to a low potential (hereinafter also referred to as "L control") and controls the ENB signal to an H potential. As a result, the switch transistor SWTR of the partial detection area PAA in which "1" is written to FF11 is controlled to an H potential, and the switch transistor SWTR of the partial detection area PAA in which "0" is written to FF11 is controlled to an L potential. As a result, the photosensors PD of the partial detection area PAA in which "1" is written to FF11 are electrically connected in parallel, and a detection value DET in which the detection values ​​of the partial detection area PAA in which "1" is written to FF11 are superimposed can be obtained during one frame period 1F.

[0066] In this state, the above-mentioned detection operation is performed by alternately providing frames in which the first light source 61 is turned on and emits the first light (red light) and frames in which the second light source 62 is turned on and emits the second light (infrared light).

[0067] Specifically, the control circuit 122 obtains a first detection value DET1 in which the detection values ​​of the selected partial detection area PAA are superimposed during one frame period 1F in which the first light source 61 is turned on and emits the first light (red light).

[0068] Furthermore, the control circuit 122 obtains a second detection value DET2 in which the detection values ​​of the selected partial detection area PAA are superimposed during one frame period 1F in which the second light source 62 is turned on to emit the second light (infrared light).

[0069] In the pulse wave data acquisition process (step S104), a detection value DET is acquired in one frame period 1F, in which the detection values ​​of the partial detection area PAA in which "1" is written to FF11 are superimposed. This allows the detection operation to be performed at a higher frame rate than the detection operation example of the comparative example shown in FIG. 7B, and reduces the amount of data transmitted and the calculation load when calculating blood oxygen saturation (SpO2) in host 200. Note that the blood oxygen saturation (SpO2) may also be calculated in control circuit 122. Even in this case, the detection operation can be performed at a higher frame rate and the calculation load can be reduced compared to the detection operation example of the comparative example shown in FIG. 7B.

[0070] Furthermore, in the pulse wave data acquisition process (step S104), the detection values ​​of the multiple partial detection areas PAA are superimposed values, which improves the accuracy of acquiring pulse wave data and the accuracy of calculating blood oxygen saturation (SpO2).

[0071] Furthermore, in the pulse wave data acquisition process (step S104), for example, the capacitance value of the negative feedback capacitance Cfb of the amplifier circuit 42 of the detection circuit 48 may be varied according to the number of optical sensors PD connected in parallel.

[0072] Fig. 16 is a diagram showing an example of the circuit configuration of the detection circuit according to the first embodiment. As shown in Fig. 16, the negative feedback capacitance Cfb of the amplifier circuit 42 of the detection circuit 48 may be a variable capacitance capacitor. The control circuit 122 controls the capacitance value of the negative feedback capacitance Cfb shown in Fig. 16. More specifically, in the pulse wave data acquisition process (step S104), the capacitance value of the negative feedback capacitance Cfb increases as the number of optical sensors PD connected in parallel increases.

[0073] Note that, although FIG. 16 illustrates an example in which the negative feedback capacitance Cfb of the amplifier circuit 42 of the detection circuit 48 is a variable capacitance capacitor, for example, a configuration in which a plurality of negative feedback capacitances Cfb can be connected in parallel and the number of negative feedback capacitances Cfb connected in parallel can be changed depending on the number of optical sensors PD connected in parallel.

[0074] Fig. 17 is a block diagram showing an example of the circuit configuration of a detection device according to a modification of embodiment 1. As shown in Fig. 17, a reference potential Vref may be applied to the anode of the optical sensor PD of each partial detection area PAA when that partial detection area PAA is deselected. This prevents the optical sensor PD of the deselected partial detection area PAA from entering a floating state during the pulse wave data acquisition process (step S104).

[0075] Specifically, when the switch transistor SWTR is controlled to low and the MODE signal is at high potential, the reference potential Vref is applied to the anode of the optical sensor PD. The MODE signal is output from the control circuit 122. The MODE signal is controlled to low potential in the entire detection area data acquisition process (step S101), and is controlled to high potential in the partial detection area setting process (step S103) and the pulse wave data acquisition process (step S104). As a result, the reference potential Vref is applied to the anode of the optical sensor PD in the non-selected partial detection area PAA in the pulse wave data acquisition process (step S104).

[0076] Furthermore, in the pulse wave data acquisition process (step S104), for example, the light intensity of the first light source 61 and the second light source 62 may be varied depending on the number of optical sensors PD connected in parallel. For example, the light intensity of the first light source 61 and the second light source 62 can be changed by varying the light source drive voltage applied to the first light source 61 and the second light source 62. Specifically, the light intensity of the first light source 61 and the second light source 62 is reduced as the number of optical sensors PD connected in parallel increases. Note that the present invention is not limited to varying the light source drive voltage applied to the first light source 61 and the second light source 62, and any other embodiment may be used as long as it is possible to control the light intensity of the first light source 61 and the second light source 62.

[0077] Furthermore, in the pulse wave data acquisition process (step S104), the exposure period CH may be varied depending on the number of optical sensors PD connected in parallel. Specifically, the exposure period CH is shortened as the number of optical sensors PD connected in parallel increases. This allows for an even higher frame rate to be achieved in the pulse wave data acquisition process (step S104).

[0078] 11, an example has been shown in which pulse wave data is acquired for all partial detection areas PAA(p) within the detection area AA in the total detection area data acquisition process (step S101), but pulse wave data may also be acquired for all partial detection areas PAA(p) within a predetermined area within the detection area AA. Even in this case, by performing the partial detection area selection process (step S102) and the partial detection area setting process (step S103) for all partial detection areas PAA(p) within the predetermined area of ​​the detection area AA, it is possible to increase the frame rate of the detection operation and reduce the load of calculation processing in the pulse wave data acquisition process (step S104).

[0079] (Embodiment 2) Fig. 18 is a diagram showing an example of a schematic configuration of a detection device according to embodiment 2. Fig. 19 is a block diagram showing an example of a circuit configuration of a partial detection area according to embodiment 2. Note that the detection processing flow in the detection device according to embodiment 2 is the same as that of embodiment 1, but the content of each process is different from that of embodiment 1.

[0080] In the second embodiment, in addition to the pulse wave, high-resolution biological data such as a blood vessel image (blood vessel pattern) can also be acquired. As shown in Fig. 18, in the configuration according to the second embodiment, the detection area AA has a plurality of partial detection areas PAA arranged in a matrix. In the example shown in Fig. 18, the detection area AA is divided into M columns and N rows of partial detection areas PAA, in which M columns of partial detection areas PAA are arranged in the first direction Dx (row direction) and N rows of partial detection areas PAA are arranged in the second direction Dy (column direction).

[0081] Also, as shown in FIG. 18, in the configuration according to the second embodiment, the detection area AA is divided into M / P data acquisition areas BAA in which P partial detection areas PAA are arranged in the first direction Dx (row direction).

[0082] 19, in the configuration according to the second embodiment, each partial detection area PAA has an SRAM circuit 13 (hereinafter also referred to as "SRAM 13"). An example of the SRAM 13 is a D flip-flop circuit. In the present disclosure, the SRAM 13 corresponds to a "storage circuit."

[0083] In the second embodiment, the sensor unit 10 includes a first drive circuit 15a, a second drive circuit 15b, and an output switching circuit 16. The first drive circuit 15a, the second drive circuit 15b, and the output switching circuit 16 are provided in, for example, the peripheral area GA.

[0084] 20 is a diagram showing an example of a specific circuit configuration of the first drive circuit. In the first drive circuit 15a, M flip-flop circuits are cascaded in the first direction Dx to correspond to m columns of partial detection areas PAA arranged in the second direction Dy, forming a shift register circuit. The first drive circuit 15a receives an STH signal, a CKH signal, a DATA signal, and an ALLONH signal. The STH signal, the CKH signal, the DATA signal, and the ALLONH signal are output from the control circuit 122. The ALLONH signal is controlled to an "H" potential in the total detection area data acquisition process (step S101) and is controlled to an "L" potential in the partial detection area setting process (step S103) and the pulse wave data acquisition process (step S104).

[0085] 21 is a diagram showing an example of a specific circuit configuration of the second drive circuit. The second drive circuit 15b has N flip-flop circuits cascaded in the second direction Dy corresponding to each of the n rows of partial detection areas PAA arranged in the first direction Dx, forming a shift register circuit. The second drive circuit 15b receives an STV signal, a CKV signal, and an ENB signal. The STV signal, the CKV signal, and the ENB signal are output from the control circuit 122. The second drive circuit 15b sequentially selects each of the n rows of partial detection areas (m, n) based on the STV signal, the CKV signal, and the ENB signal.

[0086] The SRAM 13 of each partial detection area PAA(m, n) is <n>Signal and xG <n>Selective data by signal<m,n> is read. data<m,n> is output from the first driving circuit 15a. <n>Signal and xG <n>The signal is output from the second driving circuit 15b. <n>The signal is G <n>This is the logical inversion signal of the G signal. <n>The signal is at "H" potential and xG <n>When the signal is at "L" potential, each partial detection area (m, n) in the nth row is selected.

[0087] Specifically, in the whole detection area data acquisition process (step S101) shown in FIG. <n>The signal is controlled by H and the data<m,n> When the signal is "H", the switch transistor SWTR of the partial detection area PAA(m,n) is turned on. <n>The signal is controlled by H and the data<m,n> is "H", a set value "1" is written to the SRAM 13 of the partial detection area PAA(m,n).

[0088] The output switching circuit 16 is provided with M switch circuits corresponding to the m columns of partial detection areas PAA aligned in the second direction Dy (see FIG. 18). One end of each of the M switch circuits is connected to one of the m columns of partial detection areas PAA, and the other ends of the P switch circuits are bundled together and input to M / P amplifier circuits 42. The M / P amplifier circuits 42 are provided corresponding to the M / P data acquisition areas BAA, respectively. The output switching circuit 16 receives a switching signal ASW <1> ,ASW <2> ,···,ASW (P is a natural number equal to or less than M / 2) is input. Switching signal ASW <1> ,ASW <2> ,···,ASW is output from the control circuit 122.

[0089] In the output switching circuit 16, one end of each switch circuit is connected to each of the m columns of partial detection areas PAA. In addition, the other ends of the P switch circuits in the output switching circuit 16 are bundled together and connected to M / P amplifier circuits 42. Specifically, if the number of divisions in the first direction Dx of the detection area AA is 100 and the other ends of five switch circuits are bundled together, 20 amplifier circuits 42 are provided.

[0090] Fig. 22 is a timing waveform diagram showing an example of operation in the entire detection area data acquisition process of the detection device according to embodiment 2. In the entire detection area data acquisition process (step S101) shown in Fig. 11, the control circuit 122 continuously lights up either the first light source 61 or the second light source 62, and acquires pulse wave data of all partial detection areas PAA(m, n) within the detection area AA.

[0091] Specifically, the control circuit 122 calculates the detection values ​​DET for multiple frames in each partial detection area PAA(m,n) within the detection area AA.<m,n> Obtain the detection value DET for multiple frames.<m,n> The number of frames F when acquiring is set to a number that allows multiple (for example, about 10) pulse wave peaks to be acquired.

[0092] 11, the control circuit 122 controls the ALLONH signal to H, and controls the DATA signal for each 1H period obtained by time-dividing one frame period 1F into P periods.<m,n> is the "H" potential.

[0093] In the example shown in FIG. 22, one frame period 1F is divided into P periods, and in each 1H period, G <n> During this 1H period, the control circuit 122 sequentially sets the switching signal ASW <1> ,ASW <2> ,···,ASW< / n> The output switching circuit 16 controls the switching signal ASW <1> ,ASW <2> ,···,ASW Based on this, the partial detection areas PAA(p,n), PAA(P+p,n), . . . , PAA(M-P+p,n) are simultaneously selected. <1> ,ASW <2> ,···,ASW In the H period of each of the partial detection areas PAA(1, n), PAA(2, n), . . . , PAA(P, n), a readout period RD and a reset period RST are provided. In this embodiment, as in the first embodiment, the period from the period RST of each partial detection area PAA(1, n), PAA(2, n), . . . , PAA(P, n) until the readout period RD of the next frame is set as an exposure period CH.

[0094] In the partial detection area selection process (step S102) shown in FIG. 11, the control circuit 122 selects the partial detection area PAA in which the signal strength of the data acquired by each of the M / P amplifier circuits 42 is relatively large.

[0095] Specifically, the control circuit 122 calculates the detection values ​​DET for multiple frames in each partial detection area PAA(m,n) within the detection area AA.<m,n> Using this, the time domain data DAT<m,n> Then, each time domain data DAT<m,n> Based on the ratio of the AC component DAT(AC) to the DC (direct current) component DAT(DC) (DAT(AC) / DAT(DC)×100[%]), a partial detection area PAA to be used in the pulse wave data acquisition process (step S104) shown in Fig. 11 is selected. The selection of the partial detection area PAA in the partial detection area selection process (step S102) is the same as in the first embodiment, and therefore a detailed description thereof will be omitted here.

[0096] Fig. 23 is a timing waveform diagram showing an example of operation in the partial detection area setting process of the detection device according to embodiment 2. In the partial detection area setting process (step S103) shown in Fig. 11, the control circuit 122 writes a setting value to the SRAM 13 of each partial detection area PAA(m, n). Specifically, the control circuit 122 writes a setting value of "1" to the SRAM 13 of the partial detection area PAA selected in the partial detection area selection process (step S102), and writes a setting value of "0" to the SRAM 13 of the other unselected partial detection areas PAA.

[0097] The control circuit 122 sets a setting value ("0" or "1") for each partial detection area PAA(m, n) in the DATA signal and outputs it sequentially. Fig. 24 is a conceptual diagram showing an example of a DATA signal set in the partial detection area setting process of the detection device according to the second embodiment. Each DATA shown in Fig. 24 <n>The signal contains a setting value ("0" or "1") for each partial detection area PAA(m,n). <n>The signals correspond to the partial detection areas PAA(m,n) of the n rows selected sequentially by the second driving circuit 15b.

[0098] In the second embodiment, as shown in FIG. 24, the DATA <n>It outputs a signal. Specifically, for example, DATA <1> Signal output period <1> In G <1> By controlling the signal to H, the data corresponding to the partial detection area PAA(m,1) is stored in the SRAM 13 of the partial detection area PAA(m,1).<m,1> Also, for example, DATA <2> Signal output period <2> In G <2> By controlling the signal to H, the data corresponding to the partial detection area PAA(m,2) is stored in the SRAM 13 of the partial detection area PAA(m,2).<m,2> is written. <n>Signal output period <n>By repeating the same process up to this point, the corresponding setting values ​​are written into the SRAM 13 of each partial detection area PAA(m,n).

[0099] 25 is a timing waveform diagram showing an example of operation in the pulse wave data acquisition process of the detection device according to embodiment 2. In the pulse wave data acquisition process (step S104), the control circuit 122 controls the STH signal, CKH signal, ALLONH signal, DATA signal, STV signal, CKV signal, and ENB signal to L, and controls the ASW< / n> < / n> < / n> < / n> < / n> As a result, the switch transistor SWTR of the partial detection area PAA in which "1" is written in the SRAM 13 is controlled to be high, and the switch transistor SWTR of the partial detection area PAA in which "0" is written in the SRAM 13 is controlled to be low. As a result, the optical sensors PD of the partial detection area PAA in which "1" is written in the SRAM 13 are electrically connected in parallel for each of the M / P amplifier circuits 42, and the detection values ​​DET <1> ,DET <2> ,···,DET <m p>can be obtained.

[0100] In this state, the above-mentioned detection operation is performed by alternately providing frames in which the first light source 61 is turned on and emits the first light (red light) and frames in which the second light source 62 is turned on and emits the second light (infrared light).

[0101] Specifically, during one frame period 1F in which the first light source 61 is turned on and the first light (red light) is emitted, the control circuit 122 obtains a first detection value DET1 for each of the M / P amplifier circuits 42, which is a superposition of the detection values ​​of the selected partial detection area PAA.

[0102] In addition, during one frame period 1F in which the second light source 62 is turned on and the second light (infrared light) is irradiated, the control circuit 122 obtains a second detection value DET2, which is a superposition of each detection value of the selected partial detection area PAA, for each of the M / P amplifier circuits 42.

[0103] In this embodiment, in the pulse wave data acquisition process (step S104), a detection value DET, in which the detection values ​​of the selected partial detection area PAA are superimposed, is acquired for each of M / P amplifier circuits 42 during one frame period 1F. This allows the detection operation when acquiring a pulse wave to be performed at a high frame rate in a configuration capable of acquiring high-resolution biological data such as a blood vessel image (blood vessel pattern), and reduces the amount of data transmitted and the processing load when calculating blood oxygen saturation (SpO2) in the host 200. Note that the blood oxygen saturation (SpO2) may also be calculated in the control circuit 122. In this case, the detection operation when acquiring a pulse wave can be performed at a high frame rate and the processing load can be reduced.

[0104] Furthermore, in the pulse wave data acquisition process (step S104), the detection values ​​of the multiple partial detection areas PAA are superimposed values, which improves the accuracy of acquiring pulse wave data and the accuracy of calculating blood oxygen saturation (SpO2).

[0105] In this embodiment, as in the first embodiment, in the pulse wave data acquisition process (step S104) shown in FIG. 11, for example, the capacitance value of the negative feedback capacitance Cfb of the amplifier circuit 42 of the detection circuit 48 may be varied depending on the number of optical sensors PD connected in parallel.

[0106] Specifically, for example, as shown in Fig. 16, the negative feedback capacitance Cfb of the amplifier circuit 42 of the detection circuit 48 may be a variable capacitance capacitor. The control circuit 122 controls the capacitance value of the negative feedback capacitance Cfb shown in Fig. 16. More specifically, in the pulse wave data acquisition process (step S104) shown in Fig. 11, the capacitance value of the negative feedback capacitance Cfb increases as the number of optical sensors PD connected in parallel increases.

[0107] Furthermore, for example, a configuration may be adopted in which a plurality of negative feedback capacitances Cfb can be connected in parallel, and the number of negative feedback capacitances Cfb connected in parallel is changed according to the number of photosensors PD connected in parallel.

[0108] Fig. 26 is a block diagram showing an example of the circuit configuration of a partial detection area according to a modification of embodiment 2. In this embodiment, as in embodiment 1, the reference potential Vref may be applied to the anode of the optical sensor PD of each partial detection area PAA when that partial detection area PAA is deselected, as shown in Fig. 26. This prevents the optical sensor PD of the deselected partial detection area PAA from entering a floating state in the pulse wave data acquisition process (step S104) shown in Fig. 11.

[0109] Specifically, when the switch transistor SWTR is controlled to low and the MODE signal is at a high potential, the reference potential Vref is applied to the anode of the optical sensor PD. The MODE signal is output from the control circuit 122. The MODE signal is controlled to a low potential in the entire detection area data acquisition process (step S101) shown in FIG. 11, and is controlled to a high potential in the partial detection area setting process (step S103) and the pulse wave data acquisition process (step S104). As a result, the reference potential Vref is applied to the anode of the optical sensor PD in the non-selected partial detection area PAA in the pulse wave data acquisition process (step S104).

[0110] Also in this embodiment, as in the first embodiment, in the pulse wave data acquisition process (step S104) shown in FIG. 11 , for example, the light intensities of the first light source 61 and the second light source 62 may be varied depending on the number of optical sensors PD connected in parallel. For example, the light intensities of the first light source 61 and the second light source 62 can be changed by varying the light source drive voltage applied to the first light source 61 and the second light source 62. Specifically, the light intensities of the first light source 61 and the second light source 62 are reduced as the number of optical sensors PD connected in parallel increases. Note that the embodiment is not limited to varying the light source drive voltage applied to the first light source 61 and the second light source 62, and any embodiment may be used as long as it is possible to control the light intensities of the first light source 61 and the second light source 62.

[0111] Also in this embodiment, as in the first embodiment, in the pulse wave data acquisition process (step S104) shown in Fig. 11, the exposure period CH may be varied, for example, depending on the number of optical sensors PD connected in parallel. Specifically, the exposure period CH is made shorter as the number of optical sensors PD connected in parallel increases. This makes it possible to achieve an even higher frame rate in the pulse wave data acquisition process (step S104).

[0112] Although preferred embodiments of the present invention have been described above, the present invention is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention naturally fall within the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made without departing from the spirit of each of the above-described embodiments and modifications. [Explanation of symbols]

[0113] 1. Detection device 10 Sensor section 11 Flip-flop circuit (FF) 13 SRAM circuit (SRAM) 15a First drive circuit 15b Second drive circuit 16 Output switching circuit 21 Sensor substrate 42 Amplification circuit 43 A / D conversion circuit (ADC) 48 Detection circuit 61 1st light source (light source) 62 Second light source (light source) 122 control circuit 123 Power supply circuit 126 Output circuit 200 Host AA detection area BAA data acquisition area GA peripheral area PAA partial detection area PD light sensor SWTR Switch Transistor< / m> < / n> < / n> < / n> < / n> < / n> < / n> < / n> < / n> < / n> < / n>

Claims

1. a sensor unit having a detection area divided into a plurality of partial detection areas, each of the partial detection areas being provided with an optical sensor; a control circuit having a first mode for acquiring data for each of the plurality of partial detection areas based on detection values ​​acquired for each of the plurality of partial detection areas, and a second mode for selecting a partial detection area from the plurality of partial detection areas in which the signal strength of data acquired in the first mode is relatively high, and acquiring biological data of the subject to be detected based on detection values ​​acquired by connecting the optical sensors of the selected partial detection area in parallel; an amplifier circuit to which a detection value acquired in the second mode is input; Equipped with Detection device.

2. The control circuit In the second mode, a partial detection area is selected in which a ratio of AC components to DC components of the data acquired in the first mode is equal to or greater than a predetermined value. The detection device according to claim 1 .

3. The control circuit In the second mode, a partial detection area is selected from the plurality of partial detection areas, the partial detection area being included in a predetermined number of top ratios of AC components to DC components of the data acquired in the first mode. The detection device according to claim 1 .

4. The control circuit In the first mode, a detection value is sequentially obtained for each of the plurality of partial detection areas.

4. A detection device according to any one of claims 1 to 3.

5. The sensor unit a shift register circuit in which flip-flop circuits provided in the plurality of partial detection regions are cascade-connected; The control circuit writing a setting value indicating a selection state in the second mode into the flip-flop circuit; The detection device according to claim 4 .

6. the plurality of partial detection areas are arranged in a matrix within the detection area, The sensor unit a memory circuit provided in each of the plurality of partial detection areas; The control circuit writing a setting value indicating a selection state in the second mode into the memory circuit; 4. A detection device according to any one of claims 1 to 3.

7. The sensor unit a first driving circuit including a shift register circuit in which a plurality of flip-flop circuits arranged in a row direction are cascade-connected; a second driving circuit including a shift register circuit in which a plurality of flip-flop circuits arranged in a column direction are cascade-connected; Equipped with the plurality of flip-flop circuits of the first drive circuit are connected to memory circuits provided in the partial detection regions arranged in a column direction, respectively; the plurality of flip-flop circuits of the second driving circuit are connected to memory circuits provided in the partial detection regions arranged in the row direction, The control circuit writing a setting value indicating a selection state in the second mode to a storage circuit of the partial detection area selected by the second drive circuit via the first drive circuit; The detection device according to claim 6.

8. the detection area is divided into a plurality of data acquisition areas each having a plurality of partial detection areas arranged in a row direction; a plurality of the amplifier circuits are provided corresponding to a plurality of the data acquisition regions; 8. The detection device according to claim 6 or 7.

9. a light source that irradiates the detection area with light; The control circuit a reset period in which a reference potential is applied to the optical sensor, an exposure period in which the optical sensor is exposed to light, and a readout period in which charges stored in the optical sensor are read out; 9. A detection device according to any one of claims 1 to 8.

10. The control circuit applying the reference potential to the light sensors in the partial detection areas not selected in the second mode; The detection device according to claim 9.

11. The control circuit a negative feedback capacitance of the amplifier circuit is varied in accordance with the number of partial detection areas to which the optical sensors are connected in parallel in the second mode; Detecting device according to claim 9 or 10.

12. In the second mode, the light amount of the light source is varied according to the number of partial detection areas to which the optical sensors are connected in parallel. Detecting device according to any one of claims 9 to 11.

13. The control circuit the exposure period is varied in accordance with the number of partial detection areas to which the optical sensors are connected in parallel in the second mode; Detecting device according to any one of claims 9 to 12.

14. The light source is a first light source that irradiates the detection area with first light; a second light source that irradiates the detection area with second light having a wavelength different from that of the first light; Including, The detection value acquired in the second mode is a first detection value obtained by irradiating the first light; a second detection value obtained by irradiating the second light; and Including, Detecting device according to any one of claims 9 to 13.

15. one of the first light and the second light is infrared light; 15. The detection device of claim 14.

16. one of the first light and the second light is red light; 16. The detection device of claim 15.

17. The control circuit calculating a blood oxygen saturation level based on the first detection value and the second detection value acquired in the second mode; 17. The detection device of claim 16.

18. the light sensor is an organic photodiode; Detecting device according to any one of claims 9 to 17.

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