Magnetic sensor, magnetic sensor device, and magnetic sensor system

Abstract

To provide a magnetic sensor capable of reducing the influence of noise magnetic fields, a magnetic sensor device and a magnetic sensor system each including the magnetic sensor.SOLUTION: A magnetic sensor 1 includes: first to third structures 20a-20c that have a structure for causing magnetic detection elements to detect a target magnetic field at first to third positions P1-P3 that are separated from a reference axis C; and first to third detection circuits 10a-10c that include the first to third magnetic detection elements. The second position P2 is the position rotated at an angle corresponding to an electrical angle of (120+360×m)° in an axial direction around the reference axis C from the first position P1. The third position P3 is the position rotated at an angle corresponding to an electrical angle of (240+360×n)° in the axial direction around the reference axis C from the first position P1.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a magnetic sensor including a structure having a structure for causing a magnetic detection element to detect a specific component of a magnetic field, and to a magnetic sensor device and a magnetic sensor system each including this magnetic sensor. [Background technology]

[0002] In recent years, angle sensors that generate angle detection values ​​corresponding to the angle of a detection target have been widely used in various applications, such as detecting the rotational position of a steering wheel or power steering motor in an automobile. An example of an angle sensor is an angle sensor using a magnetic detection element. An angle sensor system using a magnetic detection element generally includes a magnetic field generator that generates a detection target magnetic field whose direction rotates in conjunction with the rotation or linear movement of the target. The magnetic field generator is, for example, a magnet. The detection target angle corresponds to the angle between the direction of the detection target magnetic field at a reference position and a reference direction.

[0003] Patent Document 1 discloses a magnetic angle sensor including three magnetoresistive elements and a magnetic source configured to be movable relative to the three magnetoresistive elements. The three magnetoresistive elements are arranged in a star shape or an equilateral triangle shape. An angle signal representing the rotation angle of the magnetic source is calculated from the output signals of the three magnetoresistive elements. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] US Patent Application Publication No. 2023 / 0152125A1 Summary of the Invention [Problem to be solved by the invention]

[0005] In addition to the magnetic field to be detected, a magnetic detection element may also be subjected to a noise magnetic field other than the magnetic field to be detected. Examples of noise magnetic fields include geomagnetism and leakage magnetic fields from motors. When a noise magnetic field is applied to each magnetic detection element in this way, the magnetic detection element detects a composite magnetic field of the magnetic field to be detected and the noise magnetic field. When the direction of the magnetic field to be detected and the direction of the noise magnetic field differ, an error occurs in the angle detection value.

[0006] When a noise magnetic field is applied, the output signal of the magnetic detection element fluctuates. The fluctuation range of the output signal changes depending on the angle between the direction of the noise magnetic field and the sensitivity axis of the magnetic detection element. Therefore, in a magnetic sensor including multiple magnetic detection elements each having a sensitivity axis in a different direction, such as the magnetic angle sensor disclosed in Patent Document 1, the fluctuation range of the output signal of each of the multiple magnetic detection elements due to the noise magnetic field will be different from one another. In order to reduce errors in the angle detection value, it is necessary to sufficiently reduce the influence of the noise magnetic field before calculating the angle detection value.

[0007] The present invention has been made in consideration of such problems, and its purpose is to provide a magnetic sensor that can reduce the influence of noise magnetic fields, and a magnetic sensor device and a magnetic sensor system that each include this magnetic sensor. [Means for solving the problem]

[0008] A magnetic sensor of the present invention is configured to detect a target magnetic field including a component parallel to a reference axis. The magnetic sensor includes a first structure having a structure for causing a first magnetic detection element to detect a first partial magnetic field, which is the target magnetic field at a first position away from the reference axis, a second structure having a structure for causing a second magnetic detection element to detect a second partial magnetic field, which is the target magnetic field at a second position away from the reference axis, a third structure having a structure for causing a third magnetic detection element to detect a third partial magnetic field, which is the target magnetic field at a third position away from the reference axis, a first detection circuit including the first magnetic detection element and configured to generate a first detection signal that periodically changes in response to periodic changes in the first partial magnetic field, a second detection circuit including the second magnetic detection element and configured to generate a second detection signal that periodically changes in response to periodic changes in the second partial magnetic field, and a third detection circuit including the third magnetic detection element and configured to generate a third detection signal that periodically changes in response to periodic changes in the third partial magnetic field.

[0009] The first detection signal, the second detection signal, and the third detection signal each include a periodic component that changes at an equal period. When the period of the periodic component is 360° electrical angle and m and n are each an integer greater than or equal to 0, the second position is a position obtained by rotating from the first position an angle equivalent to (120 + 360 × m)° electrical angle in a direction around the reference axis, and the third position is a position obtained by rotating from the first position an angle equivalent to (240 + 360 × n)° electrical angle in a direction around the reference axis.

[0010] The magnetic sensor device of the present invention includes the magnetic sensor of the present invention and a processor configured to generate an angle detection value having a correspondence with a target angle based on a first detection signal, a second detection signal, and a third detection signal.

[0011] A magnetic sensor system according to a first aspect of the present invention includes the magnetic sensor of the present invention and a magnetic field generator configured to generate a target magnetic field, wherein the magnetic sensor and the magnetic field generator are configured such that, when at least one of the magnetic sensor and the magnetic field generator rotates about a reference axis, the intensity of a component of the target magnetic field parallel to the reference axis changes at each of a first position, a second position, and a third position.

[0012] A magnetic sensor system according to a second aspect of the present invention includes a magnetic field generator configured to generate a target magnetic field and a magnetic sensor configured to detect the target magnetic field, the magnetic sensor including a first structure having a structure for causing a first magnetic detection element to detect a first partial magnetic field, which is the target magnetic field at a first position away from the magnetic field generator in a first direction, a second structure having a structure for causing a second magnetic detection element to detect a second partial magnetic field, which is the target magnetic field at a second position away from the magnetic field generator in the first direction, a third structure having a structure for causing a third magnetic detection element to detect a third partial magnetic field, which is the target magnetic field at a third position away from the magnetic field generator in the first direction, a first detection circuit including the first magnetic detection element, a second detection circuit including the second magnetic detection element, and a third detection circuit including the third magnetic detection element.

[0013] The magnetic field generator is a magnetic scale with multiple pairs of alternating north and south poles. The magnetic sensor and magnetic field generator are configured so that when at least one of the magnetic sensor and magnetic field generator operates in a direction parallel to a second direction intersecting the first direction, the strength of the first-direction component of the target magnetic field at a first position, a second position, and a third position changes. When the center-to-center distance between two adjacent north poles separated by one south pole in the magnetic field generator is λ, and m and n are integers greater than or equal to 0, the second position is located (λ / 3 + m × λ) away from the first position in the second direction, and the third position is located (2λ / 3 + n × λ) away from the first position in the second direction. [Effects of the Invention]

[0014] The magnetic sensor of the present invention includes first to third structures arranged at predetermined positions, thereby making it possible to reduce the influence of noise magnetic fields. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is a perspective view showing a magnetic sensor system according to a first embodiment of the present invention. [Figure 2] FIG. 1 is a plan view showing a magnetic sensor system according to a first embodiment of the present invention. [Figure 3] FIG. 2 is an explanatory diagram for explaining a target magnetic field in the first embodiment of the present invention. [Figure 4] 1 is a circuit diagram showing a configuration of a magnetic sensor device according to a first embodiment of the present invention. [Figure 5] 1 is a perspective view showing a part of a detection circuit and a part of a structure according to a first embodiment of the present invention. FIG. [Figure 6] 2 is a plan view showing a part of each of a detection circuit and a structure according to the first embodiment of the present invention. FIG. [Figure 7] 2 is a side view showing a part of the detection circuit and a part of the structure according to the first embodiment of the present invention. FIG. [Figure 8] 1 is a perspective view showing a laminated film of a magnetoresistive effect element according to a first embodiment of the present invention. [Figure 9] FIG. 10 is a circuit diagram showing a configuration of a magnetic sensor device according to a second embodiment of the present invention. [Figure 10] FIG. 10 is a circuit diagram schematically illustrating a configuration of a magnetic sensor according to a third embodiment of the present invention. [Figure 11] FIG. 10 is a circuit diagram schematically illustrating a configuration of a magnetic sensor according to a fourth embodiment of the present invention. [Figure 12] FIG. 10 is a circuit diagram schematically illustrating a configuration of a magnetic sensor according to a fifth embodiment of the present invention. [Figure 13] FIG. 10 is a perspective view showing a magnetic sensor system according to a sixth embodiment of the present invention. [Figure 14]FIG. 13 is a plan view showing a magnetic sensor system according to a sixth embodiment of the present invention. [Figure 15] FIG. 13 is a circuit diagram schematically illustrating a configuration of a magnetic sensor according to a seventh embodiment of the present invention. [Figure 16] FIG. 13 is a plan view showing a part of each of a detection circuit and a structure according to a seventh embodiment of the present invention. [Figure 17] 13 is a cross-sectional view showing a part of a detection circuit and a part of a structure according to a seventh embodiment of the present invention. FIG. [Figure 18] FIG. 13 is a perspective view showing a magnetic sensor system according to an eighth embodiment of the present invention. [Figure 19] FIG. 13 is a plan view showing a magnetic sensor system according to an eighth embodiment of the present invention. [Figure 20] FIG. 13 is a perspective view showing a laminated film of a magnetoresistive effect element according to a ninth embodiment of the present invention. [Figure 21] FIG. 13 is a plan view showing a free layer of a laminated film of a magnetoresistive element according to a ninth embodiment of the present invention. [Figure 22] FIG. 13 is a plan view showing the free layer when a target magnetic field is applied to the magnetoresistive element according to the ninth embodiment of the present invention. [Figure 23] FIG. 13 is a plan view showing the free layer when a target magnetic field is applied to the magnetoresistive element according to the ninth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0016] [First embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the configuration of a magnetic sensor system according to a first embodiment of the present invention will be described with reference to Figs. 1 and 2. Fig. 1 is a perspective view showing a magnetic sensor system 100 according to this embodiment. Fig. 2 is a plan view showing the magnetic sensor system 100 according to this embodiment. The magnetic sensor system 100 according to this embodiment is a magnetic angle sensor system, and includes a magnetic sensor 1 according to this embodiment and a magnetic field generator 5.

[0017] The magnetic field generator 5 generates a magnetic field of the detection target related to the angle of the detection target. Hereinafter, the magnetic field of the detection target of the magnetic sensor 1 will be referred to as the target magnetic field MF. The magnetic field generator 5 in this embodiment is a cylindrical magnet. The magnetic field generator 5 has a north pole 5N and a south pole 5S arranged symmetrically around an imaginary plane including the central axis of the cylinder. The magnetic field generator 5 rotates around the central axis of the cylinder.

[0018] The north pole 5N has magnetization in one direction parallel to the reference axis C. The south pole 5S has magnetization in the opposite direction to that of the north pole 5N. In FIG. 1, the direction of magnetization of the north pole 5N is shown as a direction from bottom to top in FIG. 1, and the direction of magnetization of the south pole 5S is shown as a direction from top to bottom in FIG. 1.

[0019] In FIG. 1, the target magnetic field MF is represented by an arrow labeled MF. The target magnetic field MF includes a component parallel to the reference axis C. The magnetic sensor 1 and the magnetic field generator 5 are configured such that when at least one of the magnetic sensor 1 and the magnetic field generator 5 rotates around the reference axis C, the intensity of the component of the target magnetic field MF parallel to the reference axis C changes at any specific position away from the reference axis C. In this embodiment, the magnetic field generator 5 is particularly configured to rotate. The intensity of the target magnetic field MF at any specific position corresponds to the rotation angle θM of the magnetic field generator 5 and changes as the magnetic field generator 5 rotates.

[0020] Here, the angle to be detected is called the target angle and is represented by the symbol .theta.. The target angle .theta. in this embodiment is an angle corresponding to the rotation angle .theta.M of the magnetic field generator 5.

[0021] The magnetic sensor 1 is configured to detect a target magnetic field MF and generate at least one detection signal corresponding to a target angle θ. In this embodiment, the magnetic sensor 1 is particularly configured to detect the target magnetic field MF at each of a plurality of specific positions each spaced apart from the reference axis C. In the following description, the target magnetic field MF at each of the plurality of specific positions will be described as including, as a main component, a component in a direction parallel to the reference axis C.

[0022] 3 is an explanatory diagram illustrating the target magnetic field MF at an arbitrary specific position. In FIG. 3, the horizontal axis represents the rotation angle θM of the magnetic field generator 5, and the vertical axis represents the strength of the target magnetic field MF. In this embodiment, when the direction of the target magnetic field MF coincides with a first direction parallel to the reference axis C, the strength of the target magnetic field is expressed as a positive value, and when the direction of the target magnetic field MF coincides with a second direction opposite to the first direction, the strength of the target magnetic field is expressed as a negative value.

[0023] 3, the intensity of the target magnetic field MF at any particular position changes periodically with the rotation of the magnetic field generator 5. In particular, in this embodiment, when the magnetic field generator 5 rotates once, i.e., when the rotation angle θM changes by 360°, the intensity of the target magnetic field MF at the particular position changes by one period.

[0024] The magnetic sensor 1 includes a first electronic component 1a including a first detection circuit 10a, a second electronic component 1b including a second detection circuit 10b, and a third electronic component 1c including a third detection circuit 10c. The first to third detection circuits 10a to 10c, i.e., the first to third electronic components 1a to 1c, are arranged to face one end face of the magnetic field generator 5, i.e., a cylindrical magnet.

[0025] The first to third electronic components 1a to 1c may each be in the form of a chip, or may be in the form of a package sealed with sealing resin. When the first to third electronic components 1a to 1c are each in the form of a chip, the magnetic sensor 1 may be in the form of a single package in which the first to third electronic components 1a to 1c are sealed with sealing resin.

[0026] The first detection circuit 10a is configured to detect a first partial magnetic field, which is the target magnetic field MF, at a first position P1 away from the reference axis C. The second detection circuit 10b is configured to detect a second partial magnetic field, which is the target magnetic field MF, at a second position P2 away from the reference axis C. The third detection circuit 10c is configured to detect a third partial magnetic field, which is the target magnetic field MF, at a third position P3 away from the reference axis C.

[0027] The description of the change in the intensity of the target magnetic field MF at any particular position described with reference to FIG. 3 also applies to the first to third magnetic field portions. The intensity of each of the first to third magnetic field portions changes periodically as the magnetic field generator 5 rotates. The first detection circuit 10a is configured to generate a first detection signal S1 that changes periodically in response to the periodic change in the first magnetic field portion. The second detection circuit 10b is configured to generate a second detection signal S2 that changes periodically in response to the periodic change in the second magnetic field portion. The third detection circuit 10c is configured to generate a third detection signal S3 that changes periodically in response to the periodic change in the third magnetic field portion.

[0028] The first to third detection signals S1 to S3 each contain a periodic component that changes at an equal period. In this embodiment, in particular, the periodic component changes periodically at a predetermined signal period so as to draw an ideal sinusoidal curve (including a sine waveform and a cosine waveform). When the magnetic field generator 5 rotates once, that is, when the rotation angle θM changes by 360°, the period of the periodic component changes by one period.

[0029] The first to third positions P1 to P3 will be described in detail below. Each of the first to third positions P1 to P3 may be a position on an imaginary plane perpendicular to the reference axis C. Alternatively, at least one of the first to third positions P1 to P3 may be located away from this imaginary plane. Hereinafter, the imaginary plane will be referred to as the reference plane, and the position where the reference axis C intersects with the reference plane will be referred to as the reference position PR. In the following description, the first to third positions P1 to P3 will be assumed to be located on the reference plane. The first to third positions P1 to P3 may also be located on an imaginary circle centered at the reference position PR.

[0030] 2, the second position P2 is a position rotated from the first position P1 by an angle θ1 in the axial direction around the reference axis C. The third position P3 is a position rotated from the first position P1 by an angle θ2 in the axial direction around the reference axis C.

[0031] Here, the period of the periodic component is 360° electrical angle, and m and n are integers greater than or equal to 0. Angle θ1 corresponds to (120 + 360 × m)° electrical angle. Angle θ2 corresponds to (240 + 360 × n)° electrical angle.

[0032] Furthermore, let k be the number of pairs of north poles 5N and south poles 5S of the magnetic field generator 5. The angle θ1 is (120 / k+360×m / k)°. The angle θ2 is (240 / k+360×n / k)°.

[0033] In this embodiment, both m and n are 0, and k is 1. Therefore, the second position P2 is a position rotated 120° around the reference axis C (counterclockwise in FIG. 2) from the first position P1. The third position P3 is a position rotated 240° around the reference axis C (counterclockwise in FIG. 2) from the first position P1. Note that, particularly in this embodiment, an angle equivalent to 120° electrical angle is also 120° physically, and an angle equivalent to 240° electrical angle is also 240° physically.

[0034] The first electronic component 1a is arranged in an area including a first position P1, the second electronic component 1b is arranged in an area including a second position P2, and the third electronic component 1c is arranged in an area including a third position P3.

[0035] Here, as shown in FIGS. 1 and 2, the U direction, V direction, W direction, and Z direction are defined. In this embodiment, the Z direction is parallel to the reference axis C shown in FIG. 1 and extends from bottom to top in FIG. 1. In FIG. 2, the Z direction is represented as a direction extending from the back to the front in FIG. 2. The U direction is a direction perpendicular to the Z direction and extending from the reference axis C toward a first position P1. The V direction is a direction perpendicular to the Z direction and extending from the reference axis C toward a second position P2. The W direction is a direction perpendicular to the Z direction and extending from the reference axis C toward a third position P3. In this embodiment, the V direction is a direction rotated 120° counterclockwise in FIG. 2 from the U direction. The W direction is a direction rotated 120° counterclockwise in FIG. 2 from the V direction and also rotated 120° clockwise in FIG. 2 from the U direction. In addition, the direction opposite to the U direction is the -U direction, the direction opposite to the V direction is the -V direction, the direction opposite to the W direction is the -W direction, and the direction opposite to the Z direction is the -Z direction. Hereinafter, the coordinate system based on the reference axis C will be referred to as the reference coordinate system.

[0036] Hereinafter, in the reference coordinate system and the Cartesian coordinate system described below, a position further in the Z direction than the reference position will be referred to as "above," and a position on the opposite side of "above" than the reference position will be referred to as "below."

[0037] The magnetic sensor 1 further includes a support 7 that supports the first to third electronic components 1a to 1c. The support 7 is disposed at a predetermined distance from the magnetic field generator 5 in a direction parallel to the reference axis C. The support 7 has an upper surface 7a facing the magnetic field generator 5. The upper surface 7a may be perpendicular to the reference axis C, i.e., the Z direction. In this case, the reference plane may be the upper surface 7a or a plane parallel to the upper surface 7a. In the example shown in FIG. 2, the first to third electronic components 1a to 1c are disposed on the upper surface 7a of the support 7.

[0038] Next, the configuration of the magnetic sensor 1 will be described in detail with reference to Fig. 4. Fig. 4 is a circuit diagram showing the configuration of the magnetic sensor device according to this embodiment.

[0039] The magnetic sensor device 2 according to this embodiment includes the magnetic sensor 1 according to this embodiment and a processor 40. The processor 40 is configured to generate a detected angle value θs corresponding to the target angle θ based on the first to third detection signals S1 to S3. The processor 40 can be realized by, for example, an application specific integrated circuit (ASIC) or a microcomputer. The processor 40 may be included in the support 7 shown in FIG. 2, or may be located at a position away from the first to third electronic components 1a to 1c and the magnetic field generator 5.

[0040] The magnetic sensor 1 further includes a first structure 20a, a second structure 20b, and a third structure 20c. The first electronic component 1a includes a first detection circuit 10a and the first structure 20a. The second electronic component 1b includes a second detection circuit 10b and the second structure 20b. The third electronic component 1c includes a third detection circuit 10c and the third structure 20c.

[0041] The first structure 20a has a structure that allows the first magnetic detection element to detect the target magnetic field MF (first partial magnetic field) at the first position P1. The first magnetic detection element has sensitivity in a direction intersecting the reference axis C. In other words, the first structure 20a has a structure that allows the first magnetic detection element, which has sensitivity in a direction intersecting the reference axis C, to detect the target magnetic field MF, which mainly includes a component in a direction parallel to the reference axis C.

[0042] The first detection circuit 10a includes a first magnetic detection element. The characteristics of the first magnetic detection element change in response to changes in the intensity of the component of the target magnetic field MF parallel to the reference axis C. In this embodiment, the first detection circuit 10a includes two magnetoresistive effect elements (hereinafter referred to as MR elements) 11a and 12a as the first magnetic detection elements. The first detection circuit 10a further includes a power supply port V1, a ground port G1, and an output port E1. In terms of the circuit configuration, the MR element 11a is provided between the power supply port V1 and the output port E1. In terms of the circuit configuration, the MR element 12a is provided between the ground port G1 and the output port E1. A voltage or current of a predetermined magnitude is applied to the power supply port V1. The ground port G1 is connected to ground. Note that in this application, the expression "in terms of the circuit configuration" refers to the arrangement on a circuit diagram, not the arrangement in a physical configuration.

[0043] The second structure 20b has a structure that allows the second magnetic detection element to detect the target magnetic field MF (second partial magnetic field) at the second position P2. The second magnetic detection element has sensitivity in a direction intersecting the reference axis C. In other words, the second structure 20b has a structure that allows the second magnetic detection element, which has sensitivity in a direction intersecting the reference axis C, to detect the target magnetic field MF, which mainly includes a component in a direction parallel to the reference axis C.

[0044] The second detection circuit 10b includes a second magnetic detection element. The characteristics of the second magnetic detection element change in response to changes in the intensity of the component of the target magnetic field MF parallel to the reference axis C. In this embodiment, the second detection circuit 10b particularly includes two MR elements 11b and 12b as the second magnetic detection elements. The second detection circuit 10b further includes a power supply port V2, a ground port G2, and an output port E2. In terms of the circuit configuration, the MR element 11b is provided between the power supply port V2 and the output port E2. In terms of the circuit configuration, the MR element 12b is provided between the ground port G2 and the output port E2. A voltage or current of a predetermined magnitude is applied to the power supply port V2. The ground port G2 is connected to ground.

[0045] The third structure 20c has a structure that allows the third magnetic detection element to detect the target magnetic field MF (third partial magnetic field) at the third position P3. The third magnetic detection element has sensitivity in a direction intersecting the reference axis C. In other words, the third structure 20c has a structure that allows the third magnetic detection element, which has sensitivity in a direction intersecting the reference axis C, to detect the target magnetic field MF, which mainly includes a component in a direction parallel to the reference axis C.

[0046] The third detection circuit 10c includes a third magnetic detection element. The characteristics of the third magnetic detection element change in response to changes in the intensity of the component of the target magnetic field MF parallel to the reference axis C. In this embodiment, the third detection circuit 10c particularly includes two MR elements 11c and 12c as the third magnetic detection element. The third detection circuit 10c further includes a power supply port V3, a ground port G3, and an output port E3. In terms of the circuit configuration, the MR element 11c is provided between the power supply port V3 and the output port E3. In terms of the circuit configuration, the MR element 12c is provided between the ground port G3 and the output port E3. A voltage or current of a predetermined magnitude is applied to the power supply port V3. The ground port G3 is connected to ground.

[0047] The first to third structures 20a to 20c and the first to third detection circuits 10a to 10c are disposed on the upper surface 7a of the support 7 shown in FIG.

[0048] The magnetic sensor device 2 further includes differential detectors 31, 32, and 33. The differential detector 31 outputs a signal corresponding to the potential difference between the output ports E1 and E2 as a first signal Sa. The differential detector 32 outputs a signal corresponding to the potential difference between the output ports E2 and E3 as a second signal Sb. The differential detector 33 outputs a signal corresponding to the potential difference between the output ports E3 and E1 as a third signal Sc.

[0049] The first to third signals Sa to Sc may be generated by digital signal processing. That is, each of the difference detectors 31, 32, and 33 may be configured by a differential analog-to-digital converter such as an ASIC or a microcomputer. In this case, the difference detectors 31, 32, and 33 may be integrated with the processor 40. Alternatively, the first to third signals Sa to Sc may be generated by analog signal processing. That is, each of the difference detectors 31, 32, and 33 may be configured by a circuit using an operational amplifier. In this case, the difference detectors 31, 32, and 33 may be integrated with the processor 40 or may be separate from the processor 40.

[0050] Here, any pair of a detection circuit and a structure among the pair of the first detection circuit 10a and the first structure 20a, the pair of the second detection circuit 10b and the second structure 20b, and the pair of the third detection circuit 10c and the third structure 20c will be denoted by the reference numerals 10 and 20. Furthermore, among the MR elements included in the detection circuit 10, the MR elements corresponding to the MR elements 11a, 11b, and 11c will be denoted by the reference numeral 11, and the MR elements corresponding to the MR elements 12a, 12b, and 12c will be denoted by the reference numeral 12.

[0051] The configurations of the detection circuit 10 and the structure 20 will be described in detail below with reference to Figs. 5 to 7. Fig. 5 is a perspective view showing a portion of each of the detection circuit 10 and the structure 20. Fig. 6 is a plan view showing a portion of each of the detection circuit 10 and the structure 20. Fig. 7 is a side view showing a portion of each of the detection circuit 10 and the structure 20.

[0052] Here, the X, Y, and Z directions are defined as shown in FIGS. 5 to 7. The X, Y, and Z directions are perpendicular to one another. The direction opposite the X direction is defined as the -X direction, the direction opposite the Y direction is defined as the -Y direction, and the direction opposite the Z direction is defined as the -Z direction. The Cartesian coordinate system defined by the X, Y, and Z directions shown in FIGS. 5 to 7 is a coordinate system defined with reference to the set of the detection circuit 10 and the structure 20. The Z direction of this Cartesian coordinate system coincides with the Z direction of the reference coordinate system defined by the reference axis C shown in FIGS. 1 and 2.

[0053] The structure 20 includes at least one yoke made of a soft magnetic material. The at least one yoke is configured to generate a magnetic field component in a direction parallel to a direction intersecting a direction parallel to the Z direction based on a target magnetic field MF. The direction intersecting a direction parallel to the Z direction is also a direction intersecting the reference axis C shown in FIGS. 1 and 2. In this embodiment, the at least one yoke has a shape that is elongated in a direction parallel to the Y direction when viewed from above. The at least one yoke receives the target magnetic field MF and generates a magnetic field component in a direction parallel to the X direction.

[0054] 5 to 7, in this embodiment, the structure 20 particularly includes, as at least one yoke, a plurality of yokes 21 arranged side by side in the X direction. Each of the plurality of yokes 21 has, for example, a rectangular parallelepiped shape that is long in the Y direction. The plurality of yokes 21 have the same shape. Each of the plurality of yokes 21 has a first end face 21a located at the end in the X direction and a second end face 21b located at the end in the -X direction.

[0055] The MR elements 11 and 12 are arranged at positions where magnetic field components generated by the multiple yokes 21 are applied. In particular, in this embodiment, the MR elements 11 and 12 are arranged near the ends of each of the multiple yokes 21 in the −Z direction.

[0056] Each of the MR elements 11 and 12 includes at least one laminated film. In particular, in this embodiment, each of the MR elements 11 and 12 includes a plurality of laminated films 50 as the at least one laminated film. The detection circuit 10 further includes a wiring section 60 that electrically connects the plurality of laminated films 50. Note that the wiring section 60 is omitted in FIGS. 5 and 7.

[0057] Each of the multiple laminated films 50 of the MR element 11 is disposed near the first end face 21a of the yoke 21 so that the magnetic field component generated by the yoke 21 is applied. The multiple laminated films 50 of the MR element 11 are also disposed so that multiple films are lined up along each of the multiple yokes 21. The multiple laminated films 50 of the MR element 11 are connected in series by wiring portions 60.

[0058] Each of the multiple laminated films 50 of the MR element 12 is disposed near the second end face 21b of the yoke 21 so that the magnetic field component generated by the yoke 21 is applied to the multiple laminated films 50. The multiple laminated films 50 of the MR element 12 are also disposed so that multiple films are lined up along each of the multiple yokes 21. The multiple laminated films 50 of the MR element 12 are connected in series by wiring portions 60.

[0059] The direction of the magnetic field component that the plurality of laminated films 50 in the MR element 12 receives is opposite to the direction of the magnetic field component that the plurality of laminated films 50 in the MR element 11 receive.

[0060] The wiring section 60 includes a plurality of lower electrodes and a plurality of upper electrodes. Each of the plurality of lower electrodes has an elongated shape in the Y direction. A gap is formed between two adjacent lower electrodes in the Y direction. A stacked film 50 is disposed on the upper surface of the lower electrode near both ends in the Y direction. Each of the plurality of upper electrodes is disposed on two adjacent lower electrodes in the Y direction and electrically connects the two adjacent stacked films 50. The wiring section 60 further includes a plurality of connection electrodes in each of the MR elements 11 and 12 that connect two adjacent columns of stacked films 50 in a direction parallel to the X direction in series. The plurality of stacked films 50 in each of the MR elements 11 and 12 are connected in series by a plurality of lower electrodes, a plurality of upper electrodes, and a plurality of connection electrodes.

[0061] As shown in FIG. 7, the magnetic sensor 1 further includes at least one shield 22 made of a soft magnetic material for shielding the MR elements 11 and 12 from an external magnetic field perpendicular to the Z direction. The at least one shield 22 is disposed at a position overlapping with the multiple yokes 21 when viewed in a direction parallel to the Z direction, for example, when viewed from above. Furthermore, the multiple yokes 21 are located inside the outer edge of the at least one shield 22 when viewed from above. As shown in FIG. 7, the at least one shield 22 may be disposed ahead of the multiple yokes 21 in the Z direction. Alternatively, the at least one shield 22 may be disposed at a position where the MR elements 11 and 12 are sandwiched between the multiple yokes 21 and the at least one shield 22.

[0062] The magnetic sensor 1 may include three shields as the at least one shield 22. In this case, each of the first to third electronic components 1a to 1c includes one of the three shields. Alternatively, the magnetic sensor 1 may include one shield as the at least one shield 22. In this case, the one shield is disposed at a position overlapping with the multiple yokes 21 of each of the first to third structures 20a to 20c when viewed in a direction parallel to the Z direction, for example, when viewed from above.

[0063] The magnetic sensor 1 further includes a substrate (not shown) and an insulating layer (not shown). The detection circuit 10, the structure 20, and the at least one shield 22 are disposed on the substrate and integrated by the insulating layer.

[0064] The magnetic sensor 1 further includes a plurality of electrode pads (not shown). The plurality of electrode pads include a power supply port electrode pad corresponding to the power supply port V1, V2, or V3, a ground port electrode pad corresponding to the ground port G1, G2, or G3, and an output port electrode pad corresponding to the output port E1, E2, or E3. These electrode pads and the MR elements 11 and 12 are electrically connected by a wiring section 60.

[0065] Next, an example of the configuration of the laminated film 50 of each of the MR elements 11 and 12 will be described with reference to FIG. 8. FIG. 8 is a perspective view showing the laminated film 50. In this example, the laminated film 50 includes a magnetization fixed layer 52 having magnetization in a predetermined direction, a free layer 54 having magnetization whose direction is changeable in response to a target magnetic field MF, a gap layer 53 disposed between the magnetization fixed layer 52 and the free layer 54, and an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer 54 are laminated in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixed layer 52, thereby fixing the magnetization direction of the magnetization fixed layer 52.

[0066] The MR elements 11 and 12 may each be a TMR (Tunneling Magneto-Resistance) element, or a CPP (Current Perpendicular to Plane) type GMR (Giant Magneto-Resistance) element in which a sense current for detecting a magnetic signal flows in a direction substantially perpendicular to the plane of each layer constituting the laminated film 50. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer.

[0067] The resistance value of the laminated film 50 changes depending on the angle that the magnetization direction of the free layer 54 makes with respect to the magnetization direction of the magnetization fixed layer 52, and the resistance value is minimum when this angle is 0° and maximum when the angle is 180°. Each of the MR elements 11 and 12 has sensitivity in a direction parallel to the magnetization direction of the magnetization fixed layer 52.

[0068] In this embodiment, the magnetization of the magnetization fixed layer 52 includes a component parallel to the X direction. Also, in this embodiment, the magnetization of the magnetization fixed layer 52 in the MR element 11 and the magnetization of the magnetization fixed layer 52 in the MR element 12 include components in the same direction.

[0069] When the magnetization of the magnetization fixed layer 52 includes a component in a specific direction, the component in the specific direction may be the main component of the magnetization of the magnetization fixed layer 52. Alternatively, the magnetization of the magnetization fixed layer 52 may not include a component in a direction perpendicular to the specific direction. In this embodiment, when the magnetization of the magnetization fixed layer 52 includes a component in a specific direction, the direction of the magnetization of the magnetization fixed layer 52 is a specific direction or approximately a specific direction.

[0070] In this embodiment, each of the multiple stacked films 50 has a shape elongated in a direction parallel to the Y direction. As a result, the free layer 54 of each of the multiple stacked films 50 has shape anisotropy such that the easy axis of magnetization is parallel to the Y direction. Therefore, in the absence of an applied magnetic field, the magnetization direction of the free layer 54 is parallel to the Y direction. When a magnetic field component parallel to the X direction is present, the magnetization direction of the free layer 54 changes depending on the direction and strength of the magnetic field component. Therefore, the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetization fixed layer 52 changes depending on the direction and strength of the magnetic field component received by each of the multiple stacked films 50. Therefore, the resistance value of each of the multiple stacked films 50 corresponds to the output magnetic field component. The easy axis of magnetization can be set parallel to the Y direction by providing a magnet that applies a bias magnetic field to the free layer 54 of the stacked film 50, regardless of the shape anisotropy.

[0071] The magnetization fixed layer 52 may be a so-called self-pinned type fixed layer (synthetic ferri-pinned layer, SFP layer). The self-pinned type fixed layer has a laminated ferri-structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. When the magnetization fixed layer 52 is a self-pinned type fixed layer, the antiferromagnetic layer 51 may be omitted.

[0072] The following description will be given taking as an example a case where the magnetization of the magnetization pinned layer 52 in the MR element 11 and the magnetization of the magnetization pinned layer 52 in the MR element 12 include a component in the −X direction. In a state where there is no target magnetic field MF and, as a result, no magnetic field components generated by the multiple yokes 21, the magnetization direction of the free layer 54 of the laminated film 50 is parallel to the Y direction. When the target magnetic field MF applied to the multiple yokes 21 is in the Z direction, the magnetic field component received by the multiple laminated films 50 of the MR element 11 is in the −X direction, and the magnetic field component received by the multiple laminated films 50 of the MR element 12 is in the X direction. In this case, the magnetization direction of the free layer 54 of each of the multiple laminated films 50 of the MR element 11 tilts from a direction parallel to the Y direction toward the −X direction, and the magnetization direction of each of the free layers 54 of each of the multiple laminated films 50 of the MR element 12 tilts from a direction parallel to the Y direction toward the X direction. As a result, compared to a state in which no magnetic field component exists, the resistance value of each of the multiple laminated films 50 of the MR element 11 decreases, and the resistance value of each of the multiple laminated films 50 of the MR element 12 increases. As a result, the resistance value of the MR element 11 decreases, and the resistance value of the MR element 12 increases.

[0073] When the direction of the target magnetic field MF applied to the plurality of yokes 21 is the −Z direction, the direction of the magnetic field components and the change in the resistance value of each of the MR elements 11 and 12 are opposite to when the direction of the target magnetic field MF is the Z direction.

[0074] The amount of change in the resistance value of each of the MR elements 11 and 12 depends on the strength of the magnetic field component that each of the multiple laminated films 50 receives. As the strength of the magnetic field component increases, the resistance value of each of the MR elements 11 and 12 changes in a direction that increases or decreases, respectively. As the strength of the magnetic field component decreases, the resistance value of each of the MR elements 11 and 12 changes in a direction that decreases, respectively. The strength of the magnetic field component depends on the strength of the component parallel to the Z direction of the target magnetic field MF applied to the multiple yokes 21.

[0075] In this way, when the direction and intensity of the target magnetic field MF applied to the multiple yokes 21 change, the resistance values ​​of the MR elements 11 and 12 change such that the resistance value of the MR element 11 increases while the resistance value of the MR element 12 decreases, or the resistance value of the MR element 11 decreases while the resistance value of the MR element 12 increases. This changes the potential at the connection point between the MR elements 11 and 12. This potential changes depending on the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetization fixed layer 52.

[0076] The first detection circuit 10a generates a signal corresponding to the potential of output port E1 connected to the connection point between MR element 11a and MR element 12a as a first detection signal S1. The second detection circuit 10b generates a signal corresponding to the potential of output port E2 connected to the connection point between MR element 11b and MR element 12b as a second detection signal S2. The third detection circuit 10c generates a signal corresponding to the potential of output port E3 connected to the connection point between MR element 11c and MR element 12c as a third detection signal S3.

[0077] Next, the relationship between the reference coordinate systems shown in FIGS. 1, 2, and 4 and the Cartesian coordinate systems shown in FIGS. 5 to 8 will be described. The Cartesian coordinate systems shown in FIGS. 5 to 8 are defined for the first to third electronic components 1a to 1c. For the first electronic component 1a, the Y direction in the Cartesian coordinate system coincides with the U direction in the reference coordinate system, and the X direction in the Cartesian coordinate system coincides with a direction rotated by 90° from the U direction in the reference coordinate system toward the W direction in the reference coordinate system. For the second electronic component 1b, the Y direction in the Cartesian coordinate system coincides with the V direction in the reference coordinate system, and the X direction in the Cartesian coordinate system coincides with a direction rotated by 90° from the V direction in the reference coordinate system toward the U direction in the reference coordinate system. For the third electronic component 1c, the Y direction in the Cartesian coordinate system coincides with the W direction in the reference coordinate system, and the X direction in the Cartesian coordinate system coincides with a direction rotated by 90° from the W direction in the reference coordinate system toward the V direction in the reference coordinate system.

[0078] 4, one laminated film 50 is schematically shown as a diagram representing each of the MR elements 11a, 11b, 11c, 12a, 12b, and 12c. In the first detection circuit 10a of the first electronic component 1a, each of the plurality of laminated films 50 has a shape elongated in a direction parallel to the U direction. In the second detection circuit 10b of the second electronic component 1b, each of the plurality of laminated films 50 has a shape elongated in a direction parallel to the V direction. In the third detection circuit 10c of the third electronic component 1c, each of the plurality of laminated films 50 has a shape elongated in a direction parallel to the W direction.

[0079] 4, one yoke 21 is schematically shown as a diagram representing each of the first to third structures 20a to 20c. In the first structure 20a of the first electronic component 1a, each of the multiple yokes 21 has a shape that is elongated in a direction parallel to the U direction. In the second structure 20b of the second electronic component 1b, each of the multiple yokes 21 has a shape that is elongated in a direction parallel to the V direction. In the third structure 20c of the third electronic component 1c, each of the multiple yokes 21 has a shape that is elongated in a direction parallel to the W direction.

[0080] Next, a method for generating the detected angle value θs will be described with reference to FIG. 4. The following description includes an explanation of the operation of the processor 40. In this embodiment, the phase of the periodic component of the second detection signal S2 differs from the phase of the periodic component of the first detection signal S1 by 120°. The phase of the periodic component of the third detection signal S3 differs from the phase of the periodic component of the second detection signal S2 by 120°. The phase of the periodic component of the third detection signal S3 differs from the phase of the periodic component of the first detection signal S1 by 240°.

[0081] The first signal Sa output from the differential detector 31, the second signal Sb output from the differential detector 32, and the third signal Sc output from the differential detector 33 are expressed by the following equations (1), (2), and (3), respectively.

[0082] Sa = S1 - S2 ... (1) Sb = S2 - S3 … (2) Sc = S3 - S1 ... (3)

[0083] The first signal Sa corresponds to the difference between the first detection signal S1 and the second detection signal S2. The second signal Sb corresponds to the difference between the second detection signal S2 and the third detection signal S3. The third signal Sc corresponds to the difference between the third detection signal S3 and the first detection signal S1. The processor 40 is configured to generate an angle detection value θs using the first to third signals Sa to Sc. The processor 40 calculates θs within the range of 0° or more and less than 360°, for example, using the following equation (4). Note that "atan" represents arc tangent.

[0084]

number

[0085] Next, a brief description will be given of a manufacturing method of the magnetic sensor 1 according to this embodiment. The manufacturing method of the magnetic sensor 1 includes a step of forming the detection circuit 10, a step of forming the structure 20, and a step of forming the shield 22. The step of forming the detection circuit 10 includes a step of forming the MR elements 11 and 12, and a step of forming the wiring part 60. The step of forming the MR elements 11 and 12 includes a step of forming a plurality of stacked films 50.

[0086] In the process of forming the plurality of stacked films 50, first, a plurality of initial stacked films are formed, which will later become the plurality of stacked films 50. Each of the plurality of initial stacked films includes at least an initial magnetization fixed layer, which will later become the magnetization fixed layer 52, a free layer 54, and a gap layer 53.

[0087] Next, the magnetization direction of the initial magnetization fixed layer is fixed in the predetermined direction using laser light and an external magnetic field in a predetermined direction. In particular, in this embodiment, the laser light is irradiated while applying an external magnetic field in the same direction (e.g., the −X direction) to both the initial stacked films that will later become the stacked films 50 of the MR element 11 and the initial stacked films that will later become the stacked films 50 of the MR element 12. When the laser light irradiation is completed, the magnetization direction of the initial magnetization fixed layer is fixed in the predetermined direction. As a result, the initial magnetization fixed layer becomes the magnetization fixed layer 52, and the initial stacked films become the stacked films 50.

[0088] The step of forming the detection circuit 10 and the step of forming the structure 20 may be performed for each of the first to third electronic components 1a to 1c. That is, the method for manufacturing the magnetic sensor 1 may include the step of forming the first detection circuit 10a and the first structure 20a, the step of forming the second detection circuit 10b and the second structure 20b, and the step of forming the third detection circuit 10c and the third structure 20c.

[0089] Next, the operation and effects of the magnetic sensor 1, magnetic sensor device 2, and magnetic sensor system 100 according to this embodiment will be described. In addition to the target magnetic field MF, a noise magnetic field other than the target magnetic field MF may be applied to the magnetic sensor 1. Consider a case where a noise magnetic field in the Z direction or the −Z direction is applied to the magnetic sensor 1. In this case, compared to a state in which a noise magnetic field is not present, the resistance value of each of the multiple stacked films 50 of the MR element 11 decreases while the resistance value of each of the multiple stacked films 50 of the MR element 12 increases, or the resistance value of each of the multiple stacked films 50 of the MR element 11 increases while the resistance value of each of the multiple stacked films 50 of the MR element 12 decreases. As a result, the potential at the connection point between the MR elements 11 and 12 increases or decreases compared to a state in which a noise magnetic field is not present.

[0090] In this embodiment, the amount of change in potential at the connection point due to the noise magnetic field is the same or approximately the same in each of the first to third detection circuits 10a to 10c. Here, the amount of change in potential at the connection point in each of the first to third detection circuits 10a to 10c is expressed as S off When a noise magnetic field exists, the first detection signal is expressed as S1+S off and the second detection signal is S2+S off and the third detection signal is S3+S off If the first to third signals Sa to Sc are not generated and the angle detection value θs is generated using the first to third detection signals S1 to S3, then S off are not canceled out, an error due to the noise magnetic field occurs in the detected angle value θs.

[0091] In contrast to this, in this embodiment, the processor 40 performs calculations using the first to third detection signals S1 to S3 to generate the detected angle value θs so that errors in the detected angle value θs caused by noise magnetic fields are reduced, compared to when the detected angle value θs is generated without generating at least one signal corresponding to the difference between any two of the first to third detection signals S1 to S3. That is, in this embodiment, as can be seen from equations (1) to (3), S offare cancelled out when the first to third signals Sa to Sc are generated. As a result, according to this embodiment, it is possible to reduce the influence of the noise magnetic field. As a result, according to this embodiment, it is possible to reduce errors that occur in the detected angle value θs due to the noise magnetic field.

[0092] Moreover, according to this embodiment, the noise magnetic field in the direction perpendicular to the Z direction can be reduced by using the shield 22 shown in Fig. 7. This also makes it possible to reduce the influence of the noise magnetic field according to this embodiment.

[0093] [Second embodiment] Next, a magnetic sensor device 2 according to a second embodiment of the present invention will be described with reference to Fig. 9. Fig. 9 is a circuit diagram showing the configuration of the magnetic sensor device 2 according to this embodiment.

[0094] The magnetic sensor device 2 according to this embodiment includes differential detectors 34 and 35 instead of the differential detectors 31, 32, and 33 of the first embodiment. The differential detector 34 outputs a signal corresponding to the potential difference between the output port E1 of the first detection circuit 10a and the output port E2 of the second detection circuit 10b as a first signal Sd. The differential detector 35 outputs a signal corresponding to the potential difference between the output port E2 of the second detection circuit 10b and the output port E3 of the third detection circuit 10c as a second signal Se. The configuration of each of the differential detectors 34 and 35 is similar to the configuration of each of the differential detectors 31 to 33. The first and second signals Sd and Se may be generated by digital signal processing or analog signal processing.

[0095] The first signal Sd and the second signal Se are expressed by the following equations (5) and (6), respectively.

[0096] Sd = S1 - S2 ... (5) Se = S2 - S3 … (6)

[0097] The first signal Sd corresponds to the difference between the first detection signal S1 and the second detection signal S2. The second signal Se corresponds to the difference between the second detection signal S2 and the third detection signal S3. The processor 40 is configured to generate a first post-computation signal by a calculation that includes determining the difference between the first signal Sd and the second signal Se, generate a second post-computation signal by a calculation that includes determining the sum of the first signal Sd and the second signal Se, and generate a detected angle value θs using the first post-computation signal and the second post-computation signal.

[0098] The processor 40 generates the detected angle value θs, for example, as follows: The processor 40 first calculates the maximum value max(Sd-Se) of the difference between the first signal Sd and the second signal Se, and the minimum value min(Sd-Se) of the difference between the first signal Sd and the second signal Se. The processor 40 then calculates the correction value Bf using the maximum value max(Sd-Se) and the minimum value min(Sd-Se) according to the following equation (7).

[0099] Bf=(max(Sd-Se)-min(Sd-Se)) / 2 …(7)

[0100] The processor 40 also calculates the maximum value max(Sd+Se) of the sum of the first signal Sd and the second signal Se, and the minimum value min(Sd+Se) of the sum of the first signal Sd and the second signal Se. The processor 40 then calculates the correction value Bg using the maximum value max(Sd+Se) and the minimum value min(Sd+Se) according to the following equation (8).

[0101] Bg=(max(Sd+Se)-min(Sd+Se)) / 2 …(8)

[0102] The processor 40 then calculates the first post-computation signal Sf by the following equation (9), and calculates the second post-computation signal Sg by the following equation (10).

[0103] Sf = (Sd - Se) / Bf ... (9) Sg = (Sd + Se) / Bg ... (10)

[0104] The processor 40 then calculates θs within the range of 0° or more and less than 360° using the following equation (11).

[0105] θs=atan(Sf / Sg) …(11)

[0106] Next, the operation and effect of the magnetic sensor 1 and the magnetic sensor device 2 according to this embodiment will be described. When a noise magnetic field in the Z direction or the −Z direction is applied to the magnetic sensor 1, the potential at the connection point between the MR element 11 and the MR element 12 in each of the first to third detection circuits 10a to 10c changes, as in the first embodiment. Here, as in the first embodiment, the amount of change in the potential at the connection point between the MR element 11 and the MR element 12 in each of the first to third detection circuits 10a to 10c is expressed as S off As can be seen from equations (5) and (6), S off are cancelled out when the first and second signals Sd and Se are generated. As a result, according to this embodiment, the influence of the noise magnetic field can be reduced.

[0107] Furthermore, in this embodiment, the number of difference detectors (2) is less than the number of detection circuits (3), which allows the magnetic sensor device 2 to have a simple configuration.

[0108] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0109] [Third embodiment] Next, a magnetic sensor 1 according to a third embodiment of the present invention will be described with reference to Fig. 10. Fig. 10 is a circuit diagram schematically showing the configuration of the magnetic sensor 1 according to this embodiment.

[0110] In this embodiment, the orientation of each of the second and third electronic components 1b and 1c coincides with the orientation of the first electronic component 1a. That is, in this embodiment, for each of the first to third electronic components 1a to 1c, the Y direction in the Cartesian coordinate system (see FIGS. 5 to 8) coincides with the U direction in the reference coordinate system, and the X direction in the Cartesian coordinate system (see FIGS. 5 to 8) coincides with the direction rotated by 90° from the U direction in the reference coordinate system toward the W direction in the reference coordinate system.

[0111] Furthermore, in this embodiment, in each of the first detection circuit 10a of the first electronic component 1a, the second detection circuit 10b of the second electronic component 1b, and the third detection circuit 10c of the third electronic component 1c, the multiple laminated films 50 (see Figures 5 to 8) have a shape that is elongated in a direction parallel to the U direction.

[0112] In addition, in this embodiment, in each of the first structure 20a of the first electronic component 1a, the second structure 20b of the second electronic component 1b, and the third structure 20c of the third electronic component 1c, the multiple yokes 21 (see Figures 5 to 7) have a shape that is elongated in a direction parallel to the U direction.

[0113] The method for generating the detected angle value θs in this embodiment may be the same as that in the first embodiment or the second embodiment. As can be understood from this embodiment and the first embodiment, the present invention can generate the detected angle value θs regardless of the relationship between the X and Y directions in the Cartesian coordinate system and the U, V, and W directions in the reference coordinate system, i.e., regardless of the orientations of the second and third electronic components 1b and 1c. Similarly, the detected angle value θs can be generated even if the orientation of the first electronic component 1a is different from that in the first or second embodiment. In this way, the present invention can generate the detected angle value θs regardless of the orientations of the first to third electronic components 1a to 1c.

[0114] Other configurations, actions, and effects of this embodiment are the same as those of the first or second embodiment.

[0115] [Fourth embodiment] Next, a magnetic sensor 1 according to a fourth embodiment of the present invention will be described with reference to Fig. 11. Fig. 11 is a circuit diagram schematically showing the configuration of the magnetic sensor 1 according to this embodiment. In this embodiment, the configuration of the multiple MR elements included in each of the first to third electronic components 1a to 1c of the magnetic sensor 1 is different from that of the first embodiment.

[0116] In this embodiment, the first detection circuit 10a of the first electronic component 1a includes four MR elements 11Aa, 11Ba, 12Aa, and 12Ba instead of the two MR elements 11a and 12a in the first embodiment. The MR elements 11Aa and 12Aa are provided between the power supply port V1 and the output port E1 in the circuit configuration and are connected in series. The MR elements 11Ba and 12Ba are provided between the ground port G1 and the output port E1 in the circuit configuration and are connected in series.

[0117] In this embodiment, the second detection circuit 10b of the second electronic component 1b includes four MR elements 11Ab, 11Bb, 12Ab, and 12Bb, instead of the two MR elements 11b and 12b in the first embodiment. The MR elements 11Ab and 12Ab are provided between the power supply port V2 and the output port E2 in the circuit configuration and are connected in series. The MR elements 11Bb and 12Bb are provided between the ground port G2 and the output port E2 in the circuit configuration and are connected in series.

[0118] In this embodiment, a third detection circuit 10c of a third electronic component 1c includes four MR elements 11Ac, 11Bc, 12Ac, and 12Bc, instead of the two MR elements 11c and 12c in the first embodiment. The MR elements 11Ac and 12Ac are arranged between a power supply port V3 and an output port E3 and are connected in series in the circuit configuration. The MR elements 11Bc and 12Bc are arranged between a ground port G3 and an output port E3 and are connected in series in the circuit configuration.

[0119] The configuration of each of the MR elements 11Aa to 11Ac and 11Ba to 11Bc and their positional relationship with respect to the structure 20 are the same as those of the MR element 11 in the first embodiment. The description of the MR element 11 in the first embodiment also applies to the MR elements 11Aa to 11Ac and 11Ba to 11Bc, except for the magnetization direction of the magnetization fixed layer 52 (see FIG. 8). Furthermore, the configuration of each of the MR elements 12Aa to 12Ac and 12Ba to 12Bc and their positional relationship with respect to the structure 20 are the same as those of the MR element 12 in the first embodiment. The description of the MR element 12 in the first embodiment also applies to the MR elements 12Aa to 12Ac and 12Ba to 12Bc, except for the magnetization direction of the magnetization fixed layer 52.

[0120] In this embodiment, the magnetization of the magnetization fixed layer 52 in the MR element 11Aa and the magnetization of the magnetization fixed layer 52 in the MR element 12Ba include components in the same direction. The magnetization of the magnetization fixed layer 52 in the MR element 11Ba and the magnetization of the magnetization fixed layer 52 in the MR element 12Aa include components in the same direction. The magnetization of the magnetization fixed layer 52 in the MR element 11Aa and the magnetization of the magnetization fixed layer 52 in the MR element 12Aa include components in opposite directions. The magnetization of the magnetization fixed layer 52 in the MR element 11Ba and the magnetization of the magnetization fixed layer 52 in the MR element 12Ba include components in opposite directions.

[0121] 5 to 7 in the first embodiment, an example of the magnetization direction of the magnetization fixed layer 52 in the MR elements 11Aa, 11Ba, 12Aa, and 12Ba will be described. The magnetization of the magnetization fixed layer 52 in the MR element 11Aa and the magnetization of the magnetization fixed layer 52 in the MR element 12Ba include a component in the X direction. The magnetization of the magnetization fixed layer 52 in the MR element 11Ba and the magnetization of the magnetization fixed layer 52 in the MR element 12Aa include a component in the −X direction.

[0122] When the direction of the target magnetic field MF applied to the multiple yokes 21 (see FIGS. 5 to 7) of the first structure 20a of the first electronic component 1a is the Z direction, the direction of the magnetic field component received by the multiple laminated films 50 of the MR elements 11Aa and 11Ba (see FIGS. 5 to 7) is the −X direction, and the direction of the magnetic field component received by the multiple laminated films 50 of the MR elements 12Aa and 12Ba is the X direction. In this case, the magnetization direction of the free layer 54 of each of the multiple laminated films 50 of the MR elements 11Aa and 11Ba tilts from a direction parallel to the Y direction toward the −X direction, and the magnetization direction of the free layer 54 of each of the multiple laminated films 50 of the MR elements 12Aa and 12Ba tilts from a direction parallel to the Y direction toward the X direction. As a result, compared to a state in which no magnetic field component is present, the resistance value of each of the multiple laminated films 50 of the MR elements 11Aa and 12Aa increases, and the resistance value of each of the multiple laminated films 50 of the MR elements 11Ba and 12Ba decreases. As a result, the resistance values ​​of the MR elements 11Aa and 12Aa increase, and the resistance values ​​of the MR elements 11Ba and 12Ba decrease.

[0123] When the direction of the target magnetic field MF applied to the multiple yokes 21 is the -Z direction, the direction of the magnetic field components and the change in the resistance value of each of the MR elements 11Aa, 11Ba, 12Aa, and 12Ba are opposite to when the direction of the target magnetic field MF described above is the Z direction.

[0124] The amount of change in the resistance value of each of the MR elements 11Aa, 11Ba, 12Aa, and 12Ba depends on the strength of the magnetic field component that each of the multiple laminated films 50 receives. As the strength of the magnetic field component increases, the resistance value of each of the MR elements 11Aa, 11Ba, 12Aa, and 12Ba changes in a direction in which the amount of increase or decrease increases, respectively. As the strength of the magnetic field component decreases, the resistance value of each of the MR elements 11Aa, 11Ba, 12Aa, and 12Ba changes in a direction in which the amount of increase or decrease decreases, respectively. The strength of the magnetic field component depends on the strength of the component in a direction parallel to the Z direction of the target magnetic field MF applied to the multiple yokes 21.

[0125] In this way, when the direction and intensity of the target magnetic field MF applied to the multiple yokes 21 change, the resistance values ​​of the MR elements 11Aa, 11Ba, 12Aa, and 12Ba change such that the resistance values ​​of the MR elements 11Aa and 12Aa increase while the resistance values ​​of the MR elements 11Ba and 12Ba decrease, or the resistance values ​​of the MR elements 11Aa and 12Aa decrease while the resistance values ​​of the MR elements 11Ba and 12Ba increase. This changes the potential at the connection point between the pair of the MR elements 11Aa and 12Aa connected in series and the pair of the MR elements 11Ba and 12Ba connected in series. This potential changes depending on the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetization fixed layer 52.

[0126] The above description of the features related to the MR elements 11Aa, 11Ba, 12Aa, and 12Ba also applies to the set of MR elements 11Ab, 11Bb, 12Ab, and 12Bb and the set of MR elements 11Ac, 11Bc, 12Ac, and 12Bc. If the first electronic component 1a, the first structure 20a, and the MR elements 11Aa, 11Ba, 12Aa, and 12Ba in the description of the features related to the MR elements 11Aa, 11Ba, 12Aa, and 12Ba are replaced with the second electronic component 1b, the second structure 20b, and the MR elements 11Ab, 11Bb, 12Ab, and 12Bb, respectively, the description becomes of the features related to the MR elements 11Ab, 11Bb, 12Ab, and 12Bb. Furthermore, if the first electronic component 1a, the first structure 20a, and the MR elements 11Aa, 11Ba, 12Aa, and 12Ba in the description of the features related to the above MR elements 11Aa, 11Ba, 12Aa, and 12Ba are replaced with the third electronic component 1c, the third structure 20c, and the MR elements 11Ac, 11Bc, 12Ac, and 12Bc, respectively, the description will become of the features related to the MR elements 11Ac, 11Bc, 12Ac, and 12Bc.

[0127] In this embodiment, the first detection circuit 10a generates, as the first detection signal S1, a signal corresponding to the potential at an output port E1 connected to a connection point between the set of serially connected MR elements 11Aa and 12Aa and the set of serially connected MR elements 11Ba and 12Ba. The second detection circuit 10b generates, as the second detection signal S2, a signal corresponding to the potential at an output port E2 connected to a connection point between the set of serially connected MR elements 11Ab and 12Ab and the set of serially connected MR elements 11Bb and 12Bb. The third detection circuit 10c generates, as the third detection signal S3, a signal corresponding to the potential at an output port E3 connected to a connection point between the set of serially connected MR elements 11Ac and 12Ac and the set of serially connected MR elements 11Bc and 12Bc.

[0128] The method of generating the detected angle value θs in this embodiment may be the same as that in the first embodiment or the second embodiment. Furthermore, the orientations of the second and third electronic components 1b and 1c in this embodiment may be the same as those in the first embodiment or the third embodiment. Other configurations, actions, and effects of this embodiment are the same as those of any of the first to third embodiments.

[0129] [Fifth embodiment] Next, a magnetic sensor 1 according to a fifth embodiment of the present invention will be described with reference to Fig. 12. Fig. 12 is a circuit diagram schematically showing the configuration of the magnetic sensor 1 according to this embodiment. In this embodiment, the configuration of the multiple MR elements included in each of the first to third electronic components 1a to 1c of the magnetic sensor 1 is different from that of the fourth embodiment.

[0130] In this embodiment, the first detection circuit 10a of the first electronic component 1a does not include the two MR elements 11Aa and 11Ba of the fourth embodiment. The connection point between the MR elements 12Aa and 12Ba is connected to the output port E1. The first detection circuit 10a generates a signal corresponding to the potential of the output port E1 as a first detection signal S1.

[0131] In this embodiment, the second detection circuit 10b of the second electronic component 1b does not include the two MR elements 11Ab and 11Bb of the fourth embodiment. The connection point between the MR elements 12Ab and 12Bb is connected to the output port E2. The second detection circuit 10b generates a signal corresponding to the potential of the output port E2 as the second detection signal S2.

[0132] In this embodiment, the third detection circuit 10c of the third electronic component 1c does not include the two MR elements 11Ac and 11Bc of the fourth embodiment. The connection point between the MR element 12Ac and the MR element 12Bc is connected to the output port E3. The third detection circuit 10c generates a signal corresponding to the potential of the output port E3 as a third detection signal S3.

[0133] Other configurations, actions, and effects of this embodiment are the same as those of the fourth embodiment.

[0134] [Sixth embodiment] Next, a magnetic sensor system 100 according to a sixth embodiment of the present invention will be described with reference to Fig. 13 and Fig. 14. Fig. 13 is a perspective view showing the magnetic sensor system 100 according to this embodiment. Fig. 14 is a plan view showing the magnetic sensor system 100 according to this embodiment.

[0135] The magnetic sensor system 100 according to this embodiment includes a magnetic field generator 6 that generates a target magnetic field MF, instead of the magnetic field generator 5 in the first embodiment. The magnetic field generator 6 is a cylindrical magnet. The magnetic field generator 6 includes two north poles 6N and two south poles 6S. The north poles 6N and south poles 6S are arranged alternately around the central axis of the cylinder.

[0136] The north pole 6N has magnetization in one direction parallel to the reference axis C. The south pole 6S has magnetization in the opposite direction to that of the north pole 6N. In FIG. 13, the direction of magnetization of the north pole 6N is shown as a direction from bottom to top in FIG. 13, and the direction of magnetization of the south pole 6S is shown as a direction from top to bottom in FIG.

[0137] In this embodiment, the strength of the target magnetic field MF at any particular position changes periodically with the rotation of the magnetic field generator 6. In particular, in this embodiment, when the magnetic field generator 6 makes one rotation, the strength of the target magnetic field MF at the particular position changes by two periods.

[0138] The first to third detection circuits 10a to 10c, ie, the first to third electronic components 1a to 1c, are arranged so as to face one end face of the magnetic field generator 6, ie, the cylindrical magnet.

[0139] As shown in FIG. 14, the second position P2 is a position rotated from the first position P1 by an angle θ1 in the axial direction around the reference axis C. The third position P3 is a position rotated from the first position P1 by an angle θ2 in the axial direction around the reference axis C. As described in the first embodiment, the angle θ1 corresponds to an electrical angle of (120+360×m)°. The angle θ2 corresponds to an electrical angle of (240+360×n)°.

[0140] Furthermore, let k be the number of pairs of north poles 6N and south poles 6S of the magnetic field generator 6. The angle θ1 is (120 / k+360×m / k)°. The angle θ2 is (240 / k+360×n / k)°.

[0141] In this embodiment, both m and n are 0, and k is 2. Therefore, the second position P2 is a position rotated 60° around the reference axis C (counterclockwise in FIG. 14) from the first position P1. The third position P3 is a position rotated 120° around the reference axis C (counterclockwise in FIG. 2) from the first position P1. Note that in this embodiment, an angle equivalent to 120° electrical angle is physically 60°, and an angle equivalent to 240° electrical angle is physically 120°.

[0142] As described in the first embodiment, the U direction is a direction perpendicular to the Z direction and directed from the reference axis C toward the first position P1, the V direction is a direction perpendicular to the Z direction and directed from the reference axis C toward the second position P2, and the W direction is a direction perpendicular to the Z direction and directed from the reference axis C toward the third position P3. In this embodiment, the V direction is a direction rotated 60° counterclockwise in FIG. 14 from the U direction. The W direction is a direction rotated 60° counterclockwise in FIG. 14 from the V direction and also rotated 120° counterclockwise in FIG. 14 from the U direction.

[0143] The configuration of the first to third electronic components 1a to 1c in this embodiment may be the same as that of any of the first, third to fifth embodiments. Furthermore, the method of generating the detected angle value θs in this embodiment may be the same as that of the first embodiment or the second embodiment. Other configurations, actions, and effects of this embodiment are the same as those of any of the first to fifth embodiments.

[0144] [Seventh embodiment] Next, a magnetic sensor 1 according to a seventh embodiment of the present invention will be described with reference to Fig. 15. Fig. 15 is a circuit diagram schematically showing the configuration of the magnetic sensor 1 according to this embodiment.

[0145] The magnetic sensor 1 of this embodiment includes a first detection circuit 110a, a second detection circuit 110b, a third detection circuit 110c, a first structure 120a, a second structure 120b, and a third structure 120c, instead of the first to third detection circuits 10a to 10c and the first to third structures 20a to 20c of the first embodiment.

[0146] In this embodiment, the first electronic component 1a includes a first detection circuit 110a and a first structure 120a. The second electronic component 1b includes a second detection circuit 110b and a second structure 120b. The third electronic component 1c includes a third detection circuit 110c and a third structure 120c.

[0147] The layout of the first to third electronic components 1a to 1c is the same as the layout of the first to third electronic components 1a to 1c in the first embodiment. That is, the first electronic component 1a is arranged in an area including the first position P1 shown in FIGS. 1 and 2. The second electronic component 1b is arranged in an area including the second position P2 shown in FIGS. 1 and 2. The third electronic component 1c is arranged in an area including the third position P3 shown in FIGS. 1 and 2. Furthermore, the layout of the first to third detection circuits 110a to 110c is the same as the layout of the first to third detection circuits 10a to 10c in the first embodiment.

[0148] 15 also shows a reference coordinate system defined by the reference axis C shown in Fig. 1 and Fig. 2. The definitions of the U direction, V direction, W direction and Z direction are the same as in the first embodiment.

[0149] The first structure 120a has a structure for causing the first magnetic detection element to detect the target magnetic field MF (first partial magnetic field) at the first position P1. As in the first embodiment, the first magnetic detection element has sensitivity in a direction intersecting the reference axis C.

[0150] The first detection circuit 110a includes a first magnetic detection element. In this embodiment, the first detection circuit 110a includes two MR elements 111a and 112a as the first magnetic detection element. The first detection circuit 110a further includes a power supply port V11, a ground port G11, and an output port E11. In terms of the circuit configuration, the MR element 111a is provided between the power supply port V11 and the output port E11. In terms of the circuit configuration, the MR element 112a is provided between the ground port G11 and the output port E11. A voltage or current of a predetermined magnitude is applied to the power supply port V11. The ground port G11 is connected to ground.

[0151] The second structure 120b has a structure for causing the second magnetic detection element to detect the target magnetic field MF (second partial magnetic field) at the second position P2. The second magnetic detection element has sensitivity in a direction intersecting the reference axis C, similar to the first embodiment.

[0152] The second detection circuit 110b includes a second magnetic detection element. In this embodiment, the second detection circuit 110b includes two MR elements 111b and 112b as the second magnetic detection element. The second detection circuit 110b further includes a power supply port V12, a ground port G12, and an output port E12. In terms of the circuit configuration, the MR element 111b is provided between the power supply port V12 and the output port E12. In terms of the circuit configuration, the MR element 112b is provided between the ground port G12 and the output port E12. A voltage or current of a predetermined magnitude is applied to the power supply port V12. The ground port G12 is connected to ground.

[0153] The third structure 120c has a structure for causing the third magnetic detection element to detect the target magnetic field MF (third partial magnetic field) at the third position P3. The third magnetic detection element has sensitivity in a direction intersecting the reference axis C, similar to the first embodiment.

[0154] The third detection circuit 110c includes a third magnetic detection element. In this embodiment, the third detection circuit 110c includes two MR elements 111c and 112c as the third magnetic detection element. The third detection circuit 110c further includes a power supply port V13, a ground port G13, and an output port E13. In terms of the circuit configuration, the MR element 111c is provided between the power supply port V13 and the output port E13. In terms of the circuit configuration, the MR element 112c is provided between the ground port G13 and the output port E13. A voltage or current of a predetermined magnitude is applied to the power supply port V13. The ground port G13 is connected to ground.

[0155] Here, any pair of a detection circuit and a structure among the pair of the first detection circuit 110a and the first structure 120a, the pair of the second detection circuit 110b and the second structure 120b, and the pair of the third detection circuit 110c and the third structure 120c will be represented by the reference symbols 110 and 120. Furthermore, among the MR elements included in the detection circuit 110, the MR elements corresponding to the MR elements 111a, 111b, and 111c will be represented by the reference symbol 111, and the MR elements corresponding to the MR elements 112a, 112b, and 112c will be represented by the reference symbol 112.

[0156] The configurations of the detection circuit 110 and the structure 120 will be described in detail below with reference to Fig. 16 and Fig. 17. Fig. 16 is a plan view showing a portion of each of the detection circuit 110 and the structure 120. Fig. 17 is a cross-sectional view showing a portion of each of the detection circuit 110 and the structure 120. Fig. 17 shows a portion of the cross section taken along line 17-17 in Fig. 16.

[0157] Here, the X direction, Y direction, and Z direction are defined as shown in Figures 16 and 17. The X direction, Y direction, and Z direction are perpendicular to one another. The Cartesian coordinate system defined by the X direction, Y direction, and Z direction shown in Figures 16 and 17 is a coordinate system defined based on the set of the detection circuit 110 and the structure 120. The Z direction of this Cartesian coordinate system coincides with the Z direction of the reference coordinate system shown in Figure 15.

[0158] The magnetic sensor 1 according to this embodiment includes a substrate 201 having an upper surface 201a, and insulating layers 202, 203, 204, 205, 206, 207, and 208. The upper surface 201a of the substrate 201 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 201a of the substrate 201. Each of the MR elements 111 and 112 includes a plurality of stacked films 50 having the same configuration as that of the first embodiment. The wiring portion 60 according to this embodiment includes a plurality of lower electrodes 61 and a plurality of upper electrodes 62.

[0159] Insulating layers 202, 203, and 204 are stacked in this order on a substrate 201. A plurality of lower electrodes 61 are disposed on the insulating layer 204. An insulating layer 205 is disposed on the insulating layer 204 around the plurality of lower electrodes 61. A plurality of stacked films 50 are disposed on the plurality of lower electrodes 61. An insulating layer 206 is disposed on the plurality of lower electrodes 61 and the insulating layer 205 around the plurality of stacked films 50. A plurality of upper electrodes 62 are disposed on the plurality of stacked films 50 and the insulating layer 206. An insulating layer 207 is disposed on the insulating layer 206 around the plurality of upper electrodes 62. An insulating layer 208 is disposed on the plurality of upper electrodes 62 and the insulating layer 207.

[0160] Each lower electrode 61 has an elongated shape parallel to the Y direction. A gap is formed between two lower electrodes 61 adjacent to each other in the longitudinal direction of the lower electrodes 61. A laminated film 50 is disposed on the upper surface of each lower electrode 61 near both ends in the longitudinal direction. Each upper electrode 62 has an elongated shape parallel to the Y direction, and is disposed on two lower electrodes 61 adjacent to each other in the longitudinal direction of the lower electrodes 61 to electrically connect the two adjacent laminated films 50 to each other.

[0161] Although not shown, one stacked film 50 located at the end of a row of a plurality of stacked films 50 aligned in a direction parallel to the Y direction is connected to another stacked film 50 located at the end of another row of a plurality of adjacent stacked films 50 in a direction parallel to the X direction. These two stacked films 50 are connected to each other by an electrode not shown. The electrode not shown may be an electrode connecting the lower surfaces or upper surfaces of the two stacked films 50 to each other.

[0162] The structure 120 includes a support member 210. The support member 210 is composed of insulating layers 202, 203, and 204. Note that, of the components of the magnetic sensor 1, Fig. 16 shows the support member 210 and the multiple laminated films 50 of each of the MR elements 111 and 112.

[0163] The support member 210 has a plurality of convex surfaces 210c that protrude in a direction (Z direction) away from the upper surface 201a of the substrate 201. Each of the plurality of convex surfaces 210c extends in a direction parallel to the Y direction. In the example shown in FIG. 17, the overall shape of each of the plurality of convex surfaces 210c is a triangular roof shape created by moving the triangular shape of the convex surface 210c shown in FIG. 17 along a direction parallel to the U direction. The plurality of convex surfaces 210c are also lined up at predetermined intervals in a direction parallel to the X direction.

[0164] 17, the shape of the convex surface 210c may be a curved shape (arch shape). In this case, the overall shape of each of the multiple convex surfaces 210c is a semi-cylindrical curved surface obtained by moving the curved shape (arch shape) of the convex surface 210c along a direction parallel to the Y direction.

[0165] Each of the multiple convex surfaces 210c has an upper end farthest from the upper surface 201a of the substrate 201. In this embodiment, the upper end of each of the multiple convex surfaces 210c extends in a direction parallel to the Y direction. Here, attention is focused on any one of the multiple convex surfaces 210c. The convex surface 210c includes a first inclined surface 210a and a second inclined surface 210b. The first inclined surface 210a is the surface of the convex surface 210c that is closer to the X direction than the upper end of the convex surface 210c. The second inclined surface 210b is the surface of the convex surface 210c that is closer to the -X direction than the upper end of the convex surface 210c. In FIG. 16, the boundary between the first inclined surface 210a and the second inclined surface 210b is indicated by a dotted line.

[0166] The upper end of convex surface 210c may be the boundary between first inclined surface 210a and second inclined surface 210b. In this case, the dotted line shown in Figure 16 indicates the upper end of convex surface 210c.

[0167] The upper surface 201a of the substrate 201 is parallel to the XY plane and the reference plane described in the first embodiment. The first inclined surface 210a and the second inclined surface 210b are each inclined with respect to the upper surface 201a of the substrate 201, i.e., the reference plane. In a cross section perpendicular to the upper surface 201a of the substrate 201, the distance between the first inclined surface 210a and the second inclined surface 210b decreases with increasing distance from the upper surface 201a of the substrate 201.

[0168] In the example shown in Fig. 17, each of the first inclined surface 210a and the second inclined surface 210b is a flat surface. Note that if the shape of the convex surface 210c in the cross section shown in Fig. 17 is a curved shape (arch shape), each of the first inclined surface 210a and the second inclined surface 210b is a curved surface.

[0169] In this embodiment, since there are multiple convex surfaces 210c, there are also multiple first inclined surfaces 210a and multiple second inclined surfaces 210b. The support member 210 has multiple first inclined surfaces 210a and multiple second inclined surfaces 210b.

[0170] The support member 210 further has a flat surface 210d that exists around the multiple convex surfaces 210c. The flat surface 210d is a surface parallel to the upper surface 201a of the substrate 201. Each of the multiple convex surfaces 210c protrudes from the flat surface 210d in the Z direction. In this embodiment, the multiple convex surfaces 210c are arranged at predetermined intervals. Therefore, a flat surface 210d exists between two convex surfaces 210c that are adjacent in a direction parallel to the X direction.

[0171] In this embodiment, the multiple convex surfaces 210c and the flat surface 210d are substantially formed by the insulating layer 203. That is, the insulating layer 203 includes multiple protruding portions each protruding in the Z direction and a flat portion surrounding the multiple protruding portions. Each of the multiple protruding portions extends in a direction parallel to the Y direction and has an upper surface shaped to correspond to the convex surface 210c. The multiple protruding portions are also arranged in a direction parallel to the X direction at predetermined intervals. The thickness (dimension in the Z direction) of the flat portion is substantially constant. The insulating layer 204 has a substantially constant thickness (dimension in the Z direction) and is formed along the upper surface of the insulating layer 203. As a result, the upper surface of the insulating layer 204 becomes the multiple convex surfaces 210c and the flat surface 210d.

[0172] The insulating layer 202 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of the insulating layer 203.

[0173] The plurality of lower electrodes 61 for electrically connecting the plurality of stacked films 50 of the MR element 111 are disposed on the plurality of first inclined surfaces 210a. The plurality of lower electrodes 61 for electrically connecting the plurality of stacked films 50 of the MR element 112 are disposed on the plurality of second inclined surfaces 210b. As described above, each of the first inclined surface 210a and the second inclined surface 210b is inclined with respect to the upper surface 201a of the substrate 201, i.e., the reference plane. Therefore, the upper surfaces of each of the plurality of lower electrodes 61 are also inclined with respect to the reference plane. Therefore, it can be said that the MR elements 111 and 112 are disposed on inclined surfaces inclined with respect to the reference plane. The support member 210 is a member for supporting each of the MR elements 111 and 112 so that they are inclined with respect to the reference plane.

[0174] The magnetization of each of the magnetization fixed layers 52 of the multiple stacked films 50 of the MR element 111 includes a component of a first magnetization direction rotated by an angle α from the −X direction toward the Z direction. The magnetization of each of the magnetization fixed layers 52 of the multiple stacked films 50 of the MR element 112 includes a component of a second magnetization direction rotated by an angle β from the −X direction toward the −Z direction. The angles α and β are each within a range greater than 0° and less than 90°.

[0175] Each of the multiple first inclined surfaces 210a may be a plane parallel to the first magnetization direction and the Y direction. Each of the multiple second inclined surfaces 210b may be a plane parallel to the second magnetization direction and the Y direction.

[0176] In this embodiment, in the absence of a target magnetic field MF, the magnetization direction of the free layer 54 of the multilayer film 50 is parallel to the Y direction. When the target magnetic field MF applied to the detection circuit 110 is in the Z direction, the magnetization direction of each free layer 54 of the multiple multilayer films 50 of the MR element 111 tilts from a direction parallel to the Y direction toward the first magnetization direction, and the magnetization direction of each free layer 54 of the multiple multilayer films 50 of the MR element 112 tilts from a direction parallel to the Y direction toward a direction opposite to the second magnetization direction. As a result, compared to a state in which no magnetic field component is present, the resistance value of each of the multiple multilayer films 50 of the MR element 111 decreases, and the resistance value of each of the multiple multilayer films 50 of the MR element 112 increases. As a result, the resistance value of the MR element 111 decreases, and the resistance value of the MR element 112 increases.

[0177] When the direction of the target magnetic field MF applied to the detection circuit 110 is the −Z direction, the change in the resistance value of each of the MR elements 111 and 112 is opposite to that when the direction of the target magnetic field MF is the Z direction.

[0178] The amount of change in the resistance value of each of the MR elements 111 and 112 depends on the strength of the component parallel to the Z direction of the target magnetic field MF applied to the detection circuit 110. As the strength of this component increases, the resistance value of each of the MR elements 111 and 112 changes in a direction that increases or decreases the amount of increase or decrease, respectively. As the strength of this component decreases, the resistance value of each of the MR elements 111 and 112 changes in a direction that decreases the amount of increase or decrease, respectively.

[0179] In this way, when the direction and intensity of the target magnetic field MF applied to the detection circuit 110 change, the resistance values ​​of the MR elements 111 and 112 change such that the resistance value of the MR element 111 increases while the resistance value of the MR element 112 decreases, or the resistance value of the MR element 111 decreases while the resistance value of the MR element 112 increases. This changes the potential at the connection point between the MR elements 111 and 112. This potential changes depending on the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetization fixed layer 52.

[0180] The first detection circuit 110a generates a signal corresponding to the potential of the output port E11 connected to the connection point between the MR elements 111a and 112a as the first detection signal S1. The second detection circuit 110b generates a signal corresponding to the potential of the output port E12 connected to the connection point between the MR elements 111b and 112b as the second detection signal S2. The third detection circuit 110c generates a signal corresponding to the potential of the output port E13 connected to the connection point between the MR elements 111c and 112c as the third detection signal S3.

[0181] Next, a description will be given of the relationship between the reference coordinate system shown in Fig. 15 and the Cartesian coordinate systems shown in Fig. 16 and 17. In the present embodiment, in any of the first to third electronic components 1a to 1c, the Y direction in the Cartesian coordinate system coincides with the U direction in the reference coordinate system, and the X direction in the Cartesian coordinate system coincides with the direction rotated by 90° from the U direction in the reference coordinate system toward the W direction in the reference coordinate system.

[0182] 15, one laminated film 50 is schematically shown as a figure representing each of the MR elements 111a, 111b, 111c, 112a, 112b, and 112c. In the present embodiment, in the first detection circuit 110a of the first electronic component 1a, the second detection circuit 110b of the second electronic component 1b, and the third detection circuit 110c of the third electronic component 1c, each of the multiple laminated films 50 (see FIGS. 16 and 17) has a shape that is elongated in a direction parallel to the U direction.

[0183] 15, one convex surface 210c is schematically shown as a graphic representing each of the first to third structures 120a to 120c. In this embodiment, in the first detection circuit 110a of the first electronic component 1a, the second detection circuit 110b of the second electronic component 1b, and the third detection circuit 110c of the third electronic component 1c, each of the multiple convex surfaces 210c (see FIGS. 16 and 17) has a shape that is elongated in a direction parallel to the U direction.

[0184] Next, a brief description will be given of a manufacturing method of the magnetic sensor 1 according to this embodiment. The manufacturing method of the magnetic sensor 1 according to this embodiment is basically the same as that of the first embodiment. In this embodiment, in the step of forming the plurality of laminated films 50, laser light may be irradiated while applying an external magnetic field in the −X direction to both the plurality of initial laminated films that will later become the plurality of laminated films 50 of the MR element 111 and the plurality of initial laminated films that will later become the plurality of laminated films 50 of the MR element 112.

[0185] The method of generating the detected angle value θs in this embodiment may be the same as that in the first embodiment or the second embodiment. Furthermore, the magnetic sensor system 100 according to this embodiment may include the magnetic field generator 5 in the first embodiment or the magnetic field generator 6 in the sixth embodiment. Other configurations, actions, and effects of this embodiment are the same as those of any of the first, second, or sixth embodiments.

[0186] [Eighth embodiment] Next, a magnetic sensor 301 and a magnetic sensor system 300 according to an eighth embodiment of the present invention will be described with reference to Fig. 18 and Fig. 19. Fig. 18 is a perspective view showing the magnetic sensor system 300 according to this embodiment. Fig. 19 is a plan view showing the magnetic sensor system 300 according to this embodiment. The magnetic sensor system 300 according to this embodiment includes the magnetic sensor 301 according to this embodiment and a magnetic field generator 305 that generates a target magnetic field MF.

[0187] The magnetic field generator 305 is a linear scale having multiple pairs of N and S poles magnetized in a linear direction. The magnetic sensor 301 or the magnetic field generator 305 is movable along the longitudinal direction of the magnetic field generator 305.

[0188] Here, the X direction, Y direction, and Z direction are defined as shown in Fig. 18. In this embodiment, the X direction is a direction parallel to the longitudinal direction of the magnetic field generator 305. Two directions perpendicular to the X direction and orthogonal to each other are defined as the Y direction and the Z direction. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction.

[0189] 18, the target magnetic field MF is represented by a dashed arrow labeled MF. The target magnetic field MF includes a component in a direction perpendicular to the longitudinal direction of the magnetic field generator 305 (the direction of movement of the magnetic sensor 301 or the magnetic field generator 305), i.e., parallel to the Z direction. The magnetic sensor 301 and the magnetic field generator 305 are configured such that, when at least one of the magnetic sensor 301 and the magnetic field generator 305 is operated, the intensity of the component of the target magnetic field MF parallel to the Z direction at any specific position away from the magnetic field generator 305 changes. The intensity of the component at any specific position corresponds to the relative position of the magnetic field generator 305 with respect to the magnetic sensor 301, and changes with the change in the relative position.

[0190] Hereinafter, the position of the magnetic field generator 305 relative to the magnetic sensor 301 will be referred to as the relative position. The magnetic sensor 301 is configured to detect the target magnetic field MF and generate at least one detection signal corresponding to the relative position. In particular, in this embodiment, the magnetic sensor 301 is configured to detect the target magnetic field MF at each of a plurality of specific positions spaced apart in the Z direction from the magnetic field generator 305. Hereinafter, the target magnetic field MF at each of the plurality of specific positions will be described as including only the component of the target magnetic field MF in the Z direction.

[0191] 18, the distance between two adjacent north poles in the longitudinal direction of magnetic field generator 305, i.e., the center-to-center distance between two adjacent north poles separated by a south pole, is called the magnetic pole pitch, and the magnitude of the magnetic pole pitch is represented by the symbol λ. The center-to-center distance between two adjacent south poles separated by a north pole is equal to the magnetic pole pitch λ.

[0192] The strength of the target magnetic field MF at any particular position changes periodically as the relative position changes. In particular, in this embodiment, when the relative position changes by the magnetic pole pitch λ, the strength of the target magnetic field MF at the particular position changes by one period.

[0193] The magnetic sensor 301 includes a first electronic component 301a including a first detection circuit 310a and a first structure 320a, a second electronic component 301b including a second detection circuit 310b and a second structure 320b, and a third electronic component 301c including a third detection circuit 310c and a third structure 320c. The first to third electronic components 301a to 301c are disposed ahead of the magnetic field generator 305 in the Z direction. The first to third electronic components 301a to 301c may each be in the form of a chip or a package sealed with sealing resin.

[0194] The configurations of the first to third detection circuits 310a to 310c and the first to third structures 320a to 320c may be the same as the configurations of the detection circuit 10 and structure 20 in the first embodiment, or may be the same as the configurations of the detection circuit 110 and structure 120 in the seventh embodiment.

[0195] The first detection circuit 310a is configured to detect a first partial magnetic field, which is a target magnetic field MF at a first position P11 away from the magnetic field generator 305 in the Z direction. The first structure 320a has a structure that causes the first magnetic detection element to detect the target magnetic field MF (first partial magnetic field) at the first position P11. The first magnetic detection element has sensitivity in a direction that intersects with a direction parallel to the Z direction. The first detection circuit 310a includes the first magnetic detection element.

[0196] The second detection circuit 310b is configured to detect a second partial magnetic field, which is a target magnetic field MF at a second position P12 that is away from the magnetic field generator 305 in the Z direction. The second structure 320b has a structure that causes the second magnetic detection element to detect the target magnetic field MF (second partial magnetic field) at the second position P12. The second magnetic detection element has sensitivity in a direction that intersects with a direction parallel to the Z direction. The second detection circuit 310b includes the second magnetic detection element.

[0197] The third detection circuit 310c is configured to detect a third partial magnetic field, which is a target magnetic field MF at a third position P13 away from the magnetic field generator 305 in the Z direction. The third structure 320c has a structure for causing the third magnetic detection element to detect the target magnetic field MF (third partial magnetic field) at the third position P13. The third magnetic detection element has sensitivity in a direction intersecting with a direction parallel to the Z direction. The third detection circuit 310c includes the third magnetic detection element.

[0198] When the configurations of the first to third detection circuits 310a to 310c and the first to third structures 320a to 320c are the same as the configurations of the detection circuit 10 and structure 20 in the first embodiment, in any of the first to third detection circuits 310a to 310c, each of the multiple stacked films 50 (see FIGS. 5 to 8) may have a shape that is elongated in a direction parallel to the Y direction. In this case, in any of the first to third structures 320a to 320c, each of the multiple yokes 21 (see FIGS. 5 to 7) has a shape that is elongated in a direction parallel to the Y direction.

[0199] When the configurations of the first to third detection circuits 310a to 310c and the first to third structures 320a to 320c are the same as the configurations of the detection circuit 110 and the structure 120 in the seventh embodiment, in any of the first to third detection circuits 310a to 310c, each of the multiple stacked films 50 (see FIGS. 16 and 17) may have a shape that is elongated in a direction parallel to the Y direction. In this case, in any of the first to third structures 320a to 320c, each of the multiple convex surfaces 210c (see FIGS. 16 and 17) has a shape that is elongated in a direction parallel to the Y direction.

[0200] The description of the change in the strength of the target magnetic field MF at any particular position also applies to the first to third magnetic field segments. The strength of each of the first to third magnetic field segments varies periodically with changes in the relative position. The first detection circuit 310a is configured to generate a first detection signal that varies periodically in response to the periodic change in the first magnetic field segment. The second detection circuit 310b is configured to generate a second detection signal that varies periodically in response to the periodic change in the second magnetic field segment. The third detection circuit 310c is configured to generate a third detection signal that varies periodically in response to the periodic change in the first magnetic field segment.

[0201] The first to third detection signals each contain a periodic component that changes at an equal period to one another. In this embodiment, when the relative position changes by the magnetic pole pitch λ, the period of the periodic component changes by one period.

[0202] The first to third positions P11 to P13 will be described in detail below. Each of the first to third positions P11 to P13 may be a position on a virtual line extending in a direction parallel to the X direction at a position spaced apart from the magnetic field generator 305 in the Z direction.

[0203] 18, the second position P12 is a position separated by a distance D1 in the X direction from the first position P11, and the third position P13 is a position separated by a distance D2 in the X direction from the first position P11.

[0204] Here, m and n are each an integer equal to or greater than 0. Distance D1 is (λ / 3+m×λ). Distance D2 is (2λ / 3+n×λ). In the example shown in FIG. 18, both m and n are 0.

[0205] The magnetic sensor system 300 further includes a processor (not shown) that generates a detection value corresponding to the position of the magnetic sensor 301 or the magnetic field generator 305 based on the first to third detection signals. A method for generating a detection value according to this embodiment will be described below. The processor first generates an initial detection value using the first to third detection signals. The method for generating the initial detection value is the same as the method for generating the angle detection value θs according to the first or second embodiment. The processor also counts the number of electrical angle rotations from a reference position, assuming that one period of the initial detection value is 360° of electrical angle. One electrical angle rotation corresponds to the amount of movement of the magnetic pole pitch λ of the relative position. The processor generates a detection value corresponding to the relative position based on the initial detection value and the number of electrical angle rotations.

[0206] Other configurations, actions, and effects of this embodiment are the same as those of any of the first, second, and seventh embodiments.

[0207] [Ninth embodiment] Next, a ninth embodiment of the present invention will be described with reference to Fig. 20 and Fig. 21. In this embodiment, the configuration of the laminated film of the MR element is different from that of the first to eighth embodiments. Fig. 20 is a perspective view showing the laminated film of the MR element in this embodiment. Fig. 21 is a plan view showing the free layer of the laminated film of the MR element in this embodiment.

[0208] The stacked film 450 of this embodiment includes a magnetization fixed layer 451 having a magnetization 451m with a fixed direction, a free layer 453, and a gap layer 452 disposed between the magnetization fixed layer 451 and the free layer 453. The material and shape of the free layer 453 are selected so as to have a magnetic vortex structure (also called a vortex structure). The gap layer 452 is a tunnel barrier layer or a nonmagnetic conductive layer.

[0209] The free layer 453 has a cylindrical or nearly cylindrical shape. The free layer 453 has a vortex magnetization 453m centered around a center 453c of the magnetic vortex structure. When no magnetic field is applied to the stacked film 450, the center 453c of the magnetic vortex structure coincides with or nearly coincides with the axis of the cylinder. The center 453c of the magnetic vortex structure moves in response to the target magnetic field MF. In the example shown in FIG. 20, the entire stacked film 450 has a cylindrical shape.

[0210] Here, the X direction, Y direction, and Z direction are defined as shown in FIGS. 20 and 21. The X direction, Y direction, and Z direction are perpendicular to each other. In this embodiment, the stacking direction of the magnetization fixed layer 451, the gap layer 452, and the free layer 453 is defined as the Z direction. The direction opposite to the X direction is defined as the −X direction, the direction opposite to the Y direction is defined as the −Y direction, and the direction opposite to the Z direction is defined as the −Z direction. The Cartesian coordinate system defined by the X direction, Y direction, and Z direction shown in FIGS. 20 and 21 is a coordinate system defined with the stacked film 450 as the reference.

[0211] The center 453c of the magnetic vortex structure moves when a component of the target magnetic field MF perpendicular to the Z direction is applied to the free layer 453. It is preferable that the free layer 453 does not saturate within the range of change in the intensity of this component.

[0212] Here, the resistance value of the laminated film 450 will be described taking as an example the case where the direction of the magnetization 451m of the magnetization fixed layer 451 is the −X direction. Figures 22 and 23 show the free layer 453 when a magnetic field component MFx in a direction parallel to the X direction of the target magnetic field MF is applied to the free layer 453.

[0213] 22 shows the free layer 453 when the direction of the magnetic field component MFx is the X direction. In this case, the center 453c of the magnetic vortex structure is displaced by the magnetic field component MFx, and the magnetization direction of the entire free layer 453 becomes the X direction. In this case, the resistance value of the stacked film 450 increases.

[0214] 23 shows the free layer 453 when the direction of the magnetic field component MFx is the −X direction. In this case, the center 453c of the magnetic vortex structure is displaced by the magnetic field component MFx, and the magnetization direction of the entire free layer 453 becomes the −X direction. In this case, the resistance value of the stacked film 450 decreases.

[0215] The amount of change in the resistance value of the laminated film 450 depends on the strength of the magnetic field component MFx. As the strength of the magnetic field component MFx increases, the resistance value of the laminated film 450 increases or decreases. As the strength of the magnetic field component MFx decreases, the resistance value of the laminated film 450 decreases or increases. In this embodiment, the relationship between the strength of the magnetic field component MFx and the resistance value of the laminated film 450 is linear or nearly linear as long as the requirement that the free layer 453 does not saturate is satisfied.

[0216] Other configurations, actions, and effects of this embodiment are the same as those of any of the first to eighth embodiments.

[0217] The present invention is not limited to the above-described embodiments and various modifications are possible. For example, the first to third structures may be integrated. That is, when each of the first to third structures includes one yoke, the first to third structures may be made of one soft magnetic material.

[0218] As described above, the magnetic sensor of the present invention is configured to detect a target magnetic field including a component parallel to a reference axis. The magnetic sensor of the present invention includes a first structure having a structure for causing a first magnetic detection element to detect a first partial magnetic field, which is the target magnetic field at a first position away from the reference axis, a second structure having a structure for causing a second magnetic detection element to detect a second partial magnetic field, which is the target magnetic field at a second position away from the reference axis, a third structure having a structure for causing a third magnetic detection element to detect a third partial magnetic field, which is the target magnetic field at a third position away from the reference axis, a first detection circuit including the first magnetic detection element and configured to generate a first detection signal that periodically changes in response to periodic changes in the first partial magnetic field, a second detection circuit including the second magnetic detection element and configured to generate a second detection signal that periodically changes in response to periodic changes in the second partial magnetic field, and a third detection circuit including the third magnetic detection element and configured to generate a third detection signal that periodically changes in response to periodic changes in the third partial magnetic field.

[0219] The first detection signal, the second detection signal, and the third detection signal each include a periodic component that changes at an equal period. When the period of the periodic component is 360° electrical angle and m and n are each an integer greater than or equal to 0, the second position is a position obtained by rotating from the first position an angle equivalent to (120 + 360 × m)° electrical angle in a direction around the reference axis, and the third position is a position obtained by rotating from the first position an angle equivalent to (240 + 360 × n)° electrical angle in a direction around the reference axis.

[0220] In the magnetic sensor of the present invention, the first structure may include a first yoke made of a soft magnetic material and configured to generate a first magnetic field component in a direction parallel to a first direction intersecting the reference axis based on a first partial magnetic field. The second structure may include a second yoke made of a soft magnetic material and configured to generate a second magnetic field component in a direction parallel to a second direction intersecting the reference axis based on a second partial magnetic field. The third structure may include a third yoke made of a soft magnetic material and configured to generate a third magnetic field component in a direction parallel to a third direction intersecting the reference axis based on a third partial magnetic field. The first magnetic detection element may be located at a position where the first magnetic field component is applied. The second magnetic detection element may be located at a position where the second magnetic field component is applied. The third magnetic detection element may be located at a position where the third magnetic field component is applied.

[0221] In the magnetic sensor of the present invention, the first structure may include a first support member having a first inclined surface inclined with respect to a reference plane perpendicular to the reference axis. The second structure may include a second support member having a second inclined surface inclined with respect to the reference plane. The third structure may include a third support member having a third inclined surface inclined with respect to the reference plane. The first magnetic detection element may be disposed on the first inclined surface. The second magnetic detection element may be disposed on the second inclined surface. The third magnetic detection element may be disposed on the third inclined surface.

[0222] In the magnetic sensor of the present invention, the characteristics of the first magnetic detection element, the second magnetic detection element, and the third magnetic detection element may change in response to a change in the intensity of a component of the target magnetic field in a direction parallel to the reference axis. The first magnetic detection element may be sensitive in a first direction intersecting the reference axis. The second magnetic detection element may be sensitive in a second direction intersecting the reference axis. The third magnetic detection element may be sensitive in a third direction intersecting the reference axis.

[0223] In the magnetic sensor of the present invention, each of the first magnetic detection element, the second magnetic detection element, and the third magnetic detection element may include two magnetoresistive elements. Each of the two magnetoresistive elements may include a magnetization pinned layer having a magnetization whose direction is fixed and a free layer having a magnetization whose direction is variable in response to a target magnetic field. In this case, the magnetization of the magnetization pinned layer in one of the two magnetoresistive elements and the magnetization of the magnetization pinned layer in the other of the two magnetoresistive elements may include components in the same direction. Alternatively, each of the two magnetoresistive elements may include a magnetization pinned layer having a magnetization whose direction is fixed and a free layer having a magnetic vortex structure whose center is configured to move in response to a target magnetic field.

[0224] The magnetic sensor of the present invention may further include a shield for shielding the first magnetic detection element, the second magnetic detection element, and the third magnetic detection element from an external magnetic field in a direction perpendicular to the reference axis.

[0225] The magnetic sensor device of the present invention includes the magnetic sensor of the present invention and a processor configured to generate an angle detection value having a correspondence with a target angle based on a first detection signal, a second detection signal, and a third detection signal.

[0226] In the magnetic sensor device of the present invention, the processor may be configured to generate the angle detection value using a first signal corresponding to the difference between the first detection signal and the second detection signal, a second signal corresponding to the difference between the second detection signal and the third detection signal, and a third signal corresponding to the difference between the third detection signal and the first detection signal. Alternatively, the processor may be configured to generate the first post-computation signal by a calculation including calculating the difference between the first signal corresponding to the difference between the first detection signal and the second detection signal and the second signal corresponding to the difference between the second detection signal and the third detection signal, generate the second post-computation signal by a calculation including calculating the sum of the first signal and the second signal, and generate the angle detection value using the first post-computation signal and the second post-computation signal.

[0227] In addition, in the magnetic sensor device of the present invention, the processor may perform calculations using the first detection signal, the second detection signal, and the third detection signal to generate an angle detection value so that errors in the angle detection value caused by noise magnetic fields other than the target magnetic field detected by the magnetic sensor are reduced compared to when an angle detection value is generated without generating at least one signal corresponding to the difference between any two of the first detection signal, the second detection signal, and the third detection signal.

[0228] A magnetic sensor system according to a first aspect of the present invention includes the magnetic sensor of the present invention and a magnetic field generator configured to generate a target magnetic field, wherein the magnetic sensor and the magnetic field generator are configured such that, when at least one of the magnetic sensor and the magnetic field generator rotates about a reference axis, the intensity of a component of the target magnetic field parallel to the reference axis changes at each of a first position, a second position, and a third position.

[0229] In the magnetic sensor system according to the first aspect of the present invention, the magnetic sensor may further include a support member disposed at a predetermined distance from the magnetic field generator in a direction parallel to the reference axis and having an upper surface facing the magnetic field generator, and the first structure, the second structure, the third structure, the first detection circuit, the second detection circuit, and the third detection circuit may be disposed on the upper surface of the support member.

[0230] Furthermore, in the magnetic sensor system according to the first aspect of the present invention, the magnetic field generator may include k pairs of north and south poles, where k is an integer equal to or greater than 1. The north poles may have magnetization in one direction parallel to the reference axis. The south poles may have magnetization in the opposite direction to the magnetization of the north poles. The second position may be a position rotated from the first position by (120 / k+360×m / k)° in an axial direction around the reference axis, and the third position may be a position rotated from the first position by (240 / k+360×n / k)° in an axial direction around the reference axis.

[0231] A magnetic sensor system according to a second aspect of the present invention includes a magnetic field generator configured to generate a target magnetic field and a magnetic sensor configured to detect the target magnetic field, the magnetic sensor including a first structure having a structure for causing a first magnetic detection element to detect a first partial magnetic field, which is the target magnetic field at a first position away from the magnetic field generator in a first direction, a second structure having a structure for causing a second magnetic detection element to detect a second partial magnetic field, which is the target magnetic field at a second position away from the magnetic field generator in the first direction, a third structure having a structure for causing a third magnetic detection element to detect a third partial magnetic field, which is the target magnetic field at a third position away from the magnetic field generator in the first direction, a first detection circuit including the first magnetic detection element, a second detection circuit including the second magnetic detection element, and a third detection circuit including the third magnetic detection element.

[0232] The magnetic field generator is a magnetic scale with multiple pairs of alternating north and south poles. The magnetic sensor and magnetic field generator are configured so that when at least one of the magnetic sensor and magnetic field generator operates in a direction parallel to a second direction intersecting the first direction, the strength of the first-direction component of the target magnetic field at a first position, a second position, and a third position changes. When the center-to-center distance between two adjacent north poles separated by one south pole in the magnetic field generator is λ, and m and n are integers greater than or equal to 0, the second position is located (λ / 3 + m × λ) away from the first position in the second direction, and the third position is located (2λ / 3 + n × λ) away from the first position in the second direction. [Explanation of symbols]

[0233] 1...magnetic sensor, 1a...first electronic component, 1b...second electronic component, 1c...third electronic component, 2...magnetic sensor device, 5...magnetic field generator, 5N...north pole, 5S...south pole, 7...support, 10...detection circuit, 10a...first detection circuit, 10b...second detection circuit, 10c...third detection circuit, 11, 11a, 11b, 11c, 12, 12a, 12b, 12c...MR element, 20...structure, 20a...first structure, 20b...second structure, 20c...third structure, 21...yoke, 22...shield, 31, 32, 33...differential detector, 40...processor, 50...laminated film, 51...antiferromagnetic layer, 52...magnetization fixed layer, 53...gap layer, 54...free layer, 60...wiring section, 100...magnetic sensor system, C...reference axis, E1, E2, E3...output port, G1, G2, G3...ground port, MF...target magnetic field, P1...first position, P2...second position, P3...third position, PR...reference position, S1...first detection signal, S2...second detection signal, S3...third detection signal, Sa...first signal, Sb...second signal, Sc...third signal, V1, V2, V3...power supply port, θM...rotation angle, θs...angle detection value.

Claims

1. 1. A magnetic sensor configured to detect a magnetic field of interest including a component in a direction parallel to a reference axis, a first structure having a structure for causing a first magnetic detection element to detect a first partial magnetic field, which is the target magnetic field, at a first position away from the reference axis; a second structure having a structure for causing a second magnetic detection element to detect a second partial magnetic field, which is the target magnetic field, at a second position away from the reference axis; a third structure having a structure for causing a third magnetic detection element to detect a third partial magnetic field, which is the target magnetic field at a third position away from the reference axis; a first detection circuit including the first magnetic detection element and configured to generate a first detection signal that changes periodically in response to a periodic change in the first partial magnetic field; a second detection circuit including the second magnetic detection element and configured to generate a second detection signal that changes periodically in response to a periodic change in the second partial magnetic field; a third detection circuit including the third magnetic detection element and configured to generate a third detection signal that changes periodically in response to a periodic change in the third partial magnetic field; the first detection signal, the second detection signal, and the third detection signal each include a periodic component that changes at a period equal to one another; a magnetic sensor characterized in that, when the period of the periodic component is 360° in electrical angle and m and n are each an integer greater than or equal to 0, the second position is a position rotated from the first position by an angle equivalent to (120 + 360 × m)° in electrical angle in a direction around the reference axis, and the third position is a position rotated from the first position by an angle equivalent to (240 + 360 × n)° in electrical angle in a direction around the reference axis.

2. the first structure includes a first yoke made of a soft magnetic material and configured to generate a first magnetic field component in a direction parallel to a first direction intersecting the reference axis based on the first partial magnetic field; the second structure includes a second yoke made of a soft magnetic material and configured to generate a second magnetic field component in a direction parallel to a second direction intersecting the reference axis based on the second partial magnetic field; the third structure includes a third yoke made of a soft magnetic material and configured to generate a third magnetic field component in a direction parallel to a third direction intersecting the reference axis based on the third partial magnetic field; the first magnetic detection element is disposed at a position where the first magnetic field component is applied; the second magnetic detection element is disposed at a position where the second magnetic field component is applied; 2. The magnetic sensor according to claim 1, wherein the third magnetic detection element is disposed at a position where the third magnetic field component is applied.

3. the first structure includes a first support member having a first inclined surface inclined with respect to a reference plane perpendicular to the reference axis; the second structure includes a second support member having a second inclined surface inclined with respect to the reference plane; the third structure includes a third support member having a third inclined surface inclined with respect to the reference plane; the first magnetic detection element is disposed on the first inclined surface; the second magnetic detection element is disposed on the second inclined surface; 2. The magnetic sensor according to claim 1, wherein the third magnetic detection element is disposed on the third inclined surface.

4. 2. The magnetic sensor according to claim 1, wherein the first magnetic detection element, the second magnetic detection element, and the third magnetic detection element have characteristics that change in accordance with changes in the intensity of the component of the target magnetic field in a direction parallel to the reference axis.

5. the first magnetic detection element has sensitivity in a first direction intersecting the reference axis; the second magnetic detection element has sensitivity in a second direction intersecting the reference axis; 5. The magnetic sensor according to claim 4, wherein the third magnetic detection element has sensitivity in a third direction intersecting the reference axis.

6. 2. The magnetic sensor according to claim 1, wherein each of the first magnetic detection element, the second magnetic detection element, and the third magnetic detection element includes two magnetoresistive effect elements.

7. each of the two magnetoresistive effect elements includes a magnetization fixed layer having a magnetization whose direction is fixed, and a free layer having a magnetization whose direction is changeable in response to the target magnetic field; 7. The magnetic sensor according to claim 6, wherein the magnetization of the magnetization fixed layer in one of the two magnetoresistive effect elements and the magnetization of the magnetization fixed layer in the other of the two magnetoresistive effect elements include components in the same direction.

8. 7. The magnetic sensor according to claim 6, wherein each of the two magnetoresistive elements includes a magnetization fixed layer having a magnetization whose direction is fixed, and a free layer having a magnetic vortex structure and configured such that the center of the magnetic vortex structure moves in response to the target magnetic field.

9. 2. The magnetic sensor according to claim 1, further comprising a shield for shielding the first magnetic detection element, the second magnetic detection element, and the third magnetic detection element from an external magnetic field in a direction perpendicular to the reference axis.

10. A magnetic sensor according to any one of claims 1 to 9; and a processor configured to generate an angle detection value having a correspondence relationship with a target angle based on the first detection signal, the second detection signal, and the third detection signal.

11. 11. The magnetic sensor device according to claim 10, wherein the processor is configured to generate the angle detection value using a first signal corresponding to a difference between the first detection signal and the second detection signal, a second signal corresponding to a difference between the second detection signal and the third detection signal, and a third signal corresponding to a difference between the third detection signal and the first detection signal.

12. The processor: generating a first post-computation signal by a computation including determining a difference between a first signal corresponding to a difference between the first detection signal and the second detection signal and a second signal corresponding to a difference between the second detection signal and the third detection signal; generating a second computed signal by a computation that includes summing the first signal and the second signal; The angle detection value is generated using the first post-computation signal and the second post-computation signal.

11. The magnetic sensor device according to claim 10, wherein the magnetic sensor device is configured as follows.

13. The magnetic sensor device of claim 10, characterized in that the processor generates the angle detection value by performing calculations using the first detection signal, the second detection signal, and the third detection signal so that errors in the angle detection value caused by noise magnetic fields other than the target magnetic field detected by the magnetic sensor are reduced compared to when the angle detection value is generated without generating at least one signal corresponding to the difference between any two detection signals among the first detection signal, the second detection signal, and the third detection signal.

14. A magnetic sensor according to any one of claims 1 to 9; a magnetic field generator configured to generate the target magnetic field; The magnetic sensor system is characterized in that the magnetic sensor and the magnetic field generator are configured such that, when at least one of the magnetic sensor and the magnetic field generator rotates around the reference axis, the strength of the component of the target magnetic field in a direction parallel to the reference axis changes at each of the first position, the second position, and the third position.

15. the magnetic sensor further includes a support member disposed at a predetermined distance from the magnetic field generator in a direction parallel to the reference axis and having an upper surface facing the magnetic field generator; 15. The magnetic sensor system of claim 14, wherein the first structure, the second structure, the third structure, the first detection circuit, the second detection circuit, and the third detection circuit are disposed on the upper surface of the support.

16. the magnetic field generator includes k pairs of north poles and south poles, where k is an integer equal to or greater than 1; the north pole has a magnetization in one direction parallel to the reference axis; the south pole has a magnetization in an opposite direction to the magnetization of the north pole; The magnetic sensor system of claim 14, wherein the second position is a position rotated from the first position by (120 / k + 360 × m / k) degrees in an axial direction around the reference axis, and the third position is a position rotated from the first position by (240 / k + 360 × n / k) degrees in an axial direction around the reference axis.

17. a magnetic field generator configured to generate a target magnetic field; a magnetic sensor configured to detect the target magnetic field; The magnetic sensor a first structure having a structure for causing a first magnetic detection element to detect a first partial magnetic field, which is the target magnetic field, at a first position away from the magnetic field generator in a first direction; a second structure having a structure for causing a second magnetic detection element to detect a second partial magnetic field, which is the target magnetic field, at a second position away from the magnetic field generator in the first direction; a third structure having a structure for causing a third magnetic detection element to detect a third partial magnetic field, which is the target magnetic field, at a third position away from the magnetic field generator in the first direction; a first detection circuit including the first magnetic detection element; a second detection circuit including the second magnetic detection element; a third detection circuit including the third magnetic detection element; the magnetic field generator is a magnetic scale having a plurality of pairs of alternating north and south poles; the magnetic sensor and the magnetic field generator are configured such that, when at least one of the magnetic sensor and the magnetic field generator operates in a direction parallel to a second direction intersecting the first direction, a strength of a component of the target magnetic field in the first direction at the first position, the second position, and the third position changes; a magnetic sensor system characterized in that, when the distance between the centers of two adjacent north poles separated by one south pole in the magnetic field generator is λ and m and n are each an integer greater than or equal to 0, the second position is a position that is (λ / 3 + m × λ) away from the first position in the second direction, and the third position is a position that is (2λ / 3 + n × λ) away from the first position in the second direction.

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