Method for fabricating magnetoresistive sensor elements with wide linear response and robust nominal performance

Abstract

A magnetoresistive element for a magnetic sensor that can be used in a magnetic field higher than conventional magnetic fields is provided. The present disclosure relates to a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) disposed between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), where the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and configured to pin the reference magnetization (210) by exchange bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and configured to pin the sense magnetization (230) by exchange bias at a second blocking temperature (Tb2) lower than the first blocking temperature (Tb1). The present invention relates to a method for manufacturing a magnetoresistive effect element.

Description

[Technical Field]

[0001] The present invention relates to a magnetoresistive element adapted to sense an external magnetic field, having a wide linear response and a nominal performance that remains substantially unchanged after the magnetoresistive element is subjected to a high magnetic field. The present invention also relates to a method for manufacturing the magnetoresistive element and a magnetic sensor having a plurality of such magnetoresistive elements. [Background technology]

[0002] 1 shows a cross-sectional view of a conventional magnetoresistive sensor element 2 comprising a ferromagnetic reference layer 21 with a reference magnetization 210, a ferromagnetic sensing layer 23 with an average free sense magnetization 230, and a tunnel barrier layer 22 between the reference ferromagnetic layer 21 and the sense ferromagnetic layer 23. The sense magnetization 230 can be oriented in an external magnetic field 60, while the reference magnetization 210 remains substantially unperturbed. Thus, the external magnetic field 60 can be sensed by measuring the resistance of the magnetoresistive sensor element 2. The resistance depends on the orientation and magnitude of the average sense magnetization 230 relative to the reference magnetization 210. The reference magnetization 210 can be pinned by exchange coupling between an antiferromagnetic layer 24 and the reference layer 21.

[0003] 2a and 2b show top views of the sensing layer 23, in which the sensing magnetization 230 has a stable vortex configuration. In the vortex configuration, the magnetization is wound in a circular path along the edge of the sensing layer 23 around a core 231 that is reversibly movable according to the external magnetic field 60. The vortex configuration provides linear and non-hysteretic behavior over a large amplitude range of the external magnetic field 60 for a practical size of the magnetoresistive sensor element 2 and thickness of the sensing layer 23. Therefore, the vortex configuration is advantageous for magnetic sensor applications.

[0004] Acquiring a vortex configuration in the sensing layer 23 depends on several factors, including the material properties of the sensing layer 23. Generally, the vortex configuration is favored (at zero applied magnetic field) by varying the aspect ratio of the thickness to the diameter of the sensing layer 23. The aspect ratio is still typically much smaller than 1 (e.g., 0.01 to 0.5). More specifically, FIG. 2a shows the sense magnetization 230 in the absence of an external magnetic field 60, with the core 231 of the vortex configuration substantially at the center of the sensing layer cross section. In this configuration, the sensing layer 23 has a net magnetic moment that is substantially zero (M=0). FIG. 2b shows the sense magnetization 230 in the presence of an external magnetic field 60. The external magnetic field 60 displaces the core 231 in a direction (indicated by the dotted arrow) substantially perpendicular to the direction of the external magnetic field 60. The displacement of the core 231 results in a net magnetic moment (M=0) in the sensing layer 23. In particular, a displacement of the core 231 towards the right (as shown in FIG. 2 b) results in a net magnetic moment M>0 in the sensing layer 23 (positive axis oriented along the applied magnetic field 60), while a displacement of the core 231 towards the left (not shown) results in a net magnetic moment M<0 in the sensing layer 23 when the external magnetic field 60 is oriented opposite to the direction shown in FIG. 2 b.

[0005] FIG. 3 shows the effect of an external magnetic field 60 (H) on the sensed magnetization 230 (M, arbitrary units) of a conventional magnetoresistive sensor element. ext , arbitrary units). The complete hysteresis loop of the vortex sensing magnet 230 is shown as the vortex shedding field increases with increasing H expl The applied magnetic field H ext At this point, the sense magnetization 230 is magnetically saturated. To restore the vortex state in the sense layer 23, the nucleation field H nucl The magnetic field must be reduced below the nucleation field H nucl is the magnetic field where the vortex reforms after high-field vortex shedding. expl), the hysteretic response to the external magnetic field 60 includes a reversible linear portion corresponding to the movement of the core 231 due to the external magnetic field 60. The value and slope of the linear portion of the hysteresis loop are strongly dependent on the size of the sensing layer 23. The linear and non-hysteretic portions of the magnetization curve are ext This makes it easier to measure small variations in

[0006] In particular, the vortex is characterized by a magnetic susceptibility χ, which corresponds to the slope of the linear region of the M(H) loop.

[0007]

number

[0008] In this case, the sensitivity S of the magnetoresistive sensor element 2 is proportional to the product of the magnetic susceptibility χ of the magnetoresistive sensor element 2 and the tunneling magnetoresistance (TMR).

[0009]

number

[0010] When performing a permeability test on a magnetic sensor device including multiple magnetoresistive sensor elements 2, the magnetoresistive sensor elements 2 should be able to be exposed to high magnetic fields, such as those greater than 200 mT, without significantly altering their nominal performance. However, vortex-based magnetic sensor devices are typically configured to operate in low magnetic fields, such as those less than 100 mT. The performance of vortex-based magnetic sensor devices often changes when exposed to the high magnetic fields used in permeability tests. In particular, vortex-based magnetic sensor devices can suffer from a zero-field offset shift that reduces sensor accuracy when detecting low magnetic fields.

[0011] Furthermore, vortex-based magnetic sensor devices have a linear response only over a limited range of magnetic field magnitudes.

[0012] Patent Document 1 discloses a magnetoresistive sensor including a magnetic sensing layer, a magnetic reference layer, and a tunnel barrier layer between the magnetic sensing layer and the magnetic reference layer. The magnetoresistive sensor also includes a sense exchange layer having a layer of antiferromagnetic material. The sense exchange layer is exchange-coupled to the magnetic sensing layer. The magnetoresistive sensor further includes a reference exchange layer having a layer of antiferromagnetic material. The reference exchange layer is exchange-coupled to the magnetic reference layer.

[0013] Patent Document 2 discloses a magnetoresistive sensor including a magnetic reference layer. The magnetic reference layer has a permanently closed flux magnetization pattern in a predetermined rotational direction. The magnetoresistive sensor further includes a magnetic free layer. The magnetic free layer has a total lateral area smaller than the total lateral area of ​​the magnetic reference layer. The center of gravity of the magnetic free layer is displaced laterally relative to the center of gravity of the magnetic reference layer. [Prior art documents] [Patent documents]

[0014] [Patent Document 1] European Patent Application Publication No. 3104187 [Patent Document 2] US Patent Application Publication No. 2018 / 356474 Summary of the Invention [Means for solving the problem]

[0015] The present disclosure relates to a magnetoresistive element for a magnetic sensor, the magnetoresistive element comprising a tunnel barrier layer disposed between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization; freedom The sense magnetization has a stable vortex configuration. The magnetoresistive element is in contact with the reference layer and is exchange biased at a first blocking temperature. fixed The magnetoresistive element further includes a reference pinning layer that pins the reference magnetization. The magnetoresistive element contacts the sense layer and is exchange biased at a second blocking temperature lower than the first blocking temperature. freedomThe present invention further includes a sense pinning layer for pinning the sense magnetization. The sense layer has a thickness between 15 nm and 80 nm. The exchange bias strength between the sense pinning layer and the sense layer is 2×10 -8 J / cm 2 and 4x10 -8 J / cm 2 It is between.

[0016] The present disclosure further relates to a magnetic sensor including a plurality of the above-described magnetoresistive elements.

[0017] The present disclosure further provides a method of manufacturing a magnetoresistive element, depositing a reference pinning layer, a reference layer, a tunnel barrier layer, a sensing layer, and a sensing pinning layer, wherein the strength of the exchange bias between the sensing pinning layer and the sensing layer is greater than or equal to 2×10 -8 J / cm 2 and 4x10 -8 J / cm 2 the depositing step comprising: and annealing the reference layer with an applied external magnetic field at an annealing temperature higher than the first blocking temperature; annealing the sensing layer at an annealing temperature greater than the second blocking temperature and less than the first blocking temperature in the absence of an external magnetic field; The present invention relates to a method for manufacturing a magnetoresistive element comprising: [Effects of the Invention]

[0018] The magnetoresistive elements disclosed herein have a broad linear response. The magnetoresistive elements further have nominal performance that remains substantially unchanged after the magnetoresistive elements are exposed to high magnetic fields, such as those used when performing magnetic permeability testing. In other words, the magnetoresistive elements have reduced zero-field offset shift for more stable and reproducible vortex configurations. The vortex configurations are enhanced by large vortex nucleation fields H. nucl It is characterized by:

[0019] Exemplary embodiments of the invention are disclosed in the description and illustrated by the following drawings. [Brief explanation of the drawings]

[0020] [Figure 1] FIG. 1 shows a cross-sectional view of a conventional magnetoresistive sensor element with a sensing layer. [Figure 2a] FIG. 2a shows a top view of the sensing layer with the sensing magnetization with a vortex configuration in the absence of an external magnetic field. [Figure 2b] FIG. 2b shows a top view of the sensing layer with the sensing magnetization with a vortex configuration in the presence of an external magnetic field. [Figure 3] FIG. 3 shows the hysteresis response of a conventional magnetoresistive sensor element. [Figure 4] FIG. 4 illustrates a cross-sectional view of a magnetoresistive sensor element with a sense pinning layer and a sense layer, where the sense layer has a sense magnetization with a vortex configuration, according to one embodiment. [Figure 5] Figure 5 shows the vortex shedding and vortex nucleation fields of the vortex configuration as a function of the thickness of the sensing layer. [Figure 6] Figure 6 reports the sensitivity of the magnetoresistive element as a function of the thickness of the sense layer for a range of external magnetic fields of ±1.6 × 10 A / m and for exchange bias strengths generated by the sense pinning layer of 2 × 10 J / cm and 4 × 10 J / cm. [Figure 7] Figure 7 reports the linearity of the magnetoresistive element response in terms of linearity error as a function of the sense layer thickness for a range of external magnetic fields of ±1.6 × 104 A / m and for exchange bias strengths generated by the sense pinning layer of 2 × 10-8 J / cm2 and 4 × 10-8 J / cm2. [Figure 8] Figure 8 reports the linearity of the magnetoresistive element response in terms of linearity error as a function of the magnetoresistive element sensitivity for exchange bias strengths of 2 × 10 J / cm and 4 × 10 J / cm generated by the sensing pinning layer and for external magnetic field ranges of ±1.6 × 10 A / m. [Figure 9]Figure 9 reports the linearity of the magnetoresistive element response in terms of linearity error as a function of the magnetoresistive element sensitivity for exchange bias strengths of 2 × 10 J / cm and 4 × 10 J / cm generated by the sense pinning layer and for external magnetic fields in the range of ±3.2 × 10 A / m. DETAILED DESCRIPTION OF THE INVENTION

[0021] 4, a cross-sectional view of a magnetoresistive sensor element 2 according to one embodiment is shown. The magnetoresistive sensor element 2 comprises a ferromagnetic reference layer 21 having a reference magnetization 210, a ferromagnetic sensing layer 23 having a free sense magnetization 230, and a tunnel barrier layer 22 between the reference ferromagnetic layer 21 and the sense ferromagnetic layer 23. The sense magnetization 230 can be oriented in an external magnetic field 60 while the reference magnetization 210 remains substantially undisturbed. Thus, the external magnetic field 60 can be sensed by measuring the resistance of the magnetoresistive sensor element 2. The resistance depends on the orientation of the sense magnetization 230 relative to the reference magnetization 210.

[0022] The sense magnetization 230 has a stable vortex configuration that rotates in a circular path around the core 231 along the edge of the sense layer 23 and is reversibly movable in accordance with the external magnetic field 60. For a given lateral dimension of the magnetoresistive sensor element 2, the thickness of the sense layer 23 is selected such that the sense layer 23 has a stable vortex configuration of magnetization in the absence of an applied magnetic field.

[0023] The reference magnetization 210 is oriented substantially longitudinally in the plane of the reference layer 21. The orientation of the reference magnetization 210 is determined by the exchange coupling (which generates an exchange bias) between the reference pinning layer 24 and the reference layer 21. The reference layer 21 may comprise a synthetic antiferromagnet (SAF).

[0024] In one aspect, the reference layer 21 and the sensing layer 23 include or are formed from a ferromagnetic material, such as a cobalt ("Co"), iron ("Fe"), or nickel ("Ni")-based alloy, preferentially a CoFe-, NiFe-, or CoFeB-based alloy. The reference layer 21 may have a thickness of 2 nm to 7 nm. The reference layer 21 and the sensing layer 23 may have a multi-layer structure, each layer containing a ferromagnetic material, such as a Co-, Fe-, or Ni-based alloy, preferably a CoFe-, NiFe-, or CoFeB-based alloy, and may include a non-magnetic layer, such as Ta, Ti, W, Ru, or Ir (tantalum, titanium, tungsten, ruthenium, iridium).

[0025] The reference magnetization direction 210 and the sense magnetization direction 230 may have a magnetic anisotropy that is at least one of substantially parallel to the plane of the layers 21, 23 (in-plane as shown in FIG. 4) and substantially perpendicular to the plane of the layers 21, 23 (out-of-plane).

[0026] The magnetoresistive sensor element 2 further comprises a reference pinning layer 24 that pins the reference magnetization 210 by exchange bias at a first threshold temperature Tb1. The expression "threshold temperature" may correspond to a blocking temperature, such as the Néel temperature, or another threshold temperature of the reference pinning layer 24. The reference pinning layer 24 unpins or decouples the reference magnetization 210 when the temperature is higher than the first threshold temperature Tb1.

[0027] The magnetoresistive sensor element 2 further comprises a sense pinning layer 25 that pins the sense magnetization 230 by exchange bias at a second threshold temperature Tb2 that is lower than the first threshold temperature Tb1.

[0028] In one aspect, the sense pinning layer 25 can be configured such that the magnitude of the exchange bias generated by the sense pinning layer 25 in the sense layer 23 is less than the magnitude of the exchange bias generated by the reference pinning layer 24 in the reference layer 21. For example, the magnitude of the exchange bias generated by the sense pinning layer 25 in the sense layer 23 can be substantially less than 2×10 -8 J / cm2 From 4×10 -8 J / cm 2 (0.2 erg / cm 2 to 0.4 erg / cm 2 )

[0029] In some aspects, the thickness of the sense layer 23 may be selected so that the strength of the exchange bias generated in the sense layer 23 by the sense pinning layer 25 aligns the sense magnetization 230 with the external magnetic field 60, making it measurable in a state where the magnetization can change.

[0030] In some aspects, the reference pinning layer 24 and the sense pinning layer 25 include or are formed from antiferromagnetic materials that pin the reference magnetization 210 and the sense magnetization 230, respectively, through exchange coupling. In particular, the reference pinning layer 24 and the sense pinning layer 25 include or are formed from the following antiferromagnetic-type magnetic materials: manganese ("Mn") based alloys, e.g., iridium ("Ir") and Mn based alloys (e.g., IrMn); Fe (iron) and Mn-based alloys (e.g., FeMn), Platinum ("Pt") and Mn-based alloys (e.g., PtMn); Alloys based on Ni (nickel) and Mn (e.g., NiMn) or chromium ("Cr"), or NiO (nickel oxide) or FeO (iron oxide).

[0031] In some aspects, the thickness of the reference pinning layer 24 and the sense pinning layer 25 may be between 4 nm and 15 nm.

[0032] The tunnel barrier layer 22 includes or is formed of an insulating material. Suitable insulating materials include oxides such as aluminum oxide (e.g., Al2O3) and magnesium oxide (e.g., MgO). The thickness of the tunnel barrier layer 22 may be in the nanometer range, such as about 1 nm to about 10 nm. A magnetic tunnel junction 2 with a crystalline MgO-based tunnel barrier layer 22 can achieve a large TMR (tunnel magnetoresistance), for example, up to 200%.

[0033] Figure 5 shows the vortex shedding field H expl and the vortex nucleation field H nucl as a function of the thickness of the sensing layer 23. The vortex shedding magnetic field H expl and the vortex nucleation magnetic field H nucl is calculated for a sense layer 23 comprising a NiFe alloy, a TMR of the magnetoresistive sensor element 2 of 140%, and a reference magnet 210 pinned in-plane (i.e., in the plane of the reference layer 21). The strength of the exchange bias induced in the sense layer 23 by the sense pinning layer 25 is 2×10 -8 J / cm 2 and 4×10 -8 J / cm 2 The vortex shedding field H calculated as a function of the thickness of the sensing layer 23 in the absence of the exchange bias generated by the sensing pinning layer 25 is expl and the vortex nucleation magnetic field H nucl is also shown.

[0034] FIG. 5 shows the nucleation field H when the sensing layer 23 is subjected to an exchange bias generated by the sensing pinning layer 25 and when there is no exchange bias generated by the sensing pinning layer 25. nucl and the emitted magnetic field H expl Compared with the nucleation field H nucl and the emitted magnetic field H expl is generally higher for thicknesses of the sensing layer 23 less than about 40 nm. nucl and the emitted magnetic field H expl High values ​​of nucleation field H are obtained for thicknesses of the sensing layer 23 between 15 nm and 80 nm. nucl and the emitted magnetic field H explThe higher strength of the magnetoresistive sensor element 2 allows for increased stability of the vortex configuration, which in turn allows for a wider linear response range of the magnetoresistive sensor element 2 and reduces response changes of the magnetoresistive sensor element 2 when the magnetoresistive sensor element 2 is exposed to the high magnetic fields used in magnetic permeability testing.

[0035] Figure 6 shows ±1.6×10 4 A / m (±200 Oe) and an external magnetic field of 60 and 2 × 10 -8 J / cm 2 (white circle) and 4 × 10 -8 J / cm 2 The sensitivity S of the magnetoresistive element 10 is reported as a function of the thickness of the sense layer 23 to the strength of the exchange bias generated by the sense pinning layer 25 (open squares). The sensitivity S of a conventional magnetoresistive element without a sense pinning layer 25 is also 1.6×10 4 The magnetization vortex state results from the equilibrium between the vortex magnetostatic energy and the exchange energy from the sense pinning layer 25. Due to the competition between the magnetostatic energy for a large sense layer 23 thickness and the increased exchange energy (or pinning field) for a small sense layer 23 thickness, the maximum sensitivity S of the magnetoresistive element 10 is obtained by adjusting the strength of the exchange bias generated by the sense pinning layer 25. Here, 4×10 -8 J / cm 2 An exchange bias of 0.15 results in a sensitivity S of between 3 and 5 mV / V / mT for a sensing layer 23 having a thickness between 15 nm and 80 nm. Such values ​​of sensitivity S are suitable for magnetic sensor applications.

[0036] Figure 7 shows ±1.6×10 4 A / m (±200 Oe) and an external magnetic field of 60 and 2 × 10 -8 J / cm 2 (white circle) and 4 × 10 -8 J / cm 2The linearity of the magnetoresistive element 10 response is reported in terms of linearity error (%) as a function of the thickness of the sense layer 23 for a given exchange bias strength generated by the sense pinning layer 25 (open squares). The linearity of the response obtained for a conventional magnetoresistive element without a sense pinning layer 25 was also 1.6×10 4 The values ​​are reported as a function of the sensing layer thickness (solid squares) for an external magnetic field of 60 A / m (200 Oe). Figure 7 shows the 4 FIG. 7 shows that the linearity error for a range of external magnetic fields 60 of ±200 Oe (A / m) can be reduced for a sense layer 23 having a thickness of less than 20 nm compared to the linearity error of a magnetoresistive element without a sense pinning layer 25. 4 It is shown that the linearity error of the response of the magnetoresistive element 10 to a range of external magnetic fields 60 in A / m (200±Oe) is less than 4% for sensing layers 23 having thicknesses from 15 nm to 80 nm.

[0037] 8 and 9 show that the strength of the exchange bias generated by the sense pinning layer 25 is 2×10 -8 J / cm 2 (white circle) and 4 × 10 -8 J / cm 2 The linearity of the response of the magnetoresistive element 10 is reported in terms of linearity error (%) as a function of the sensitivity S of the magnetoresistive element 10 when the 4 The linearity was calculated for the range of external magnetic field 60 of A / m (±200 Oe), and in Figure 9, it was ±3.2 × 10 4 The linearity was calculated for a range of external magnetic field 60 of ±400 Oe (A / m). The linearity of the response obtained for a conventional magnetoresistive element without a sense pinning layer 25 was also ±1.6×10 4 A / m external magnetic field 60 (white circle) and ±3.2 × 10 4 The sensitivity S of a conventional magnetoresistive element is reported as a function of the external magnetic field 60 (open circles) in A / m.

[0038] ±1.6×10 4 External magnetic fields in the range of 60 and 2×10 A / m -8 J / cm2 For an exchange bias of ±3.2×10, a sensing layer 23 thickness between 15 nm and 80 nm results in a linearity error of less than 3.5% in the response of the magnetoresistive element 10. 4 A / m and larger external magnetic field in the range of 60 and 2×10 -8 J / cm 2 For an exchange bias of 0.1, a sensing layer 23 thickness between 15 nm and 80 nm results in a linearity error of less than 2% in the response of the magnetoresistive element 10 .

[0039] A sensing layer thickness between 15 nm and 80 nm allows for strong exchange coupling of the sense magnetization in the portion of the layer close to the sense pinning layer and weaker exchange coupling of the sense magnetization in the portion of the layer farther from the sense pinning layer. As a result, in the presence of an external magnetic field, the vortex behaves linearly in the farther portion. A sensing layer thickness between 15 nm and 80 nm allows for the combination of the effect of exchange coupling of the sense magnetization (no change in nominal performance after the magnetoresistive element is exposed to a high magnetic field) and the acquisition of a wide linear response.

[0040] A low sensitivity S of the response of the magnetoresistive element 10 (eg, a sensitivity S of less than 5%) is obtained by adjusting the strength of the exchange bias generated by the sense pinning layer 25 and by adjusting the thickness of the sense layer 23 .

[0041] According to one embodiment, a method for manufacturing the magnetoresistive element 10 comprises the following steps: annealing the magnetoresistive element 10 at an annealing temperature above a first blocking temperature Tb1 with an applied external magnetic field sufficient to saturate the magnetization of the reference layer 21 and pin the reference layer 21 in a direction along the direction of the applied magnetic field; annealing the magnetoresistive element 10 at an annealing temperature higher than the second blocking temperature Tb2 and lower than the first blocking temperature Tb1 in the absence of an applied external magnetic field, thereby fixing the sensing layer 21 in a magnetic vortex configuration.

[0042] Prior to the annealing step, the method may include forming the magnetoresistive element 10, and may include depositing the reference pinning layer 24 and the sense pinning layer 25. The reference layer 21 may be deposited directly on the reference pinning layer 24, and the sense layer 23 may be deposited directly on the sense pinning layer 25.

[0043] Forming the magnetoresistive element 10 may further comprise depositing a tunnel barrier layer 22, where the sense layer 23 is deposited on the tunnel barrier layer 22. Deposition of the tunnel barrier layer 22 may be performed by using an RF magnetron sputtering technique or any other suitable technique.

[0044] In some aspects, forming the magnetoresistive element 10 comprises depositing, in order, the reference pinning layer 24, the reference layer 23, the tunnel barrier layer 22, the sense layer 23, and the sense pinning layer 25. The magnetoresistive element 10 may further comprise depositing, in order, the sense pinning layer 25, the sense layer 23, the tunnel barrier layer 22, the reference layer 23, and the reference pinning layer 24.

[0045] In one embodiment, the magnetic sensor comprises a plurality of magnetoresistive elements 2 as disclosed herein. Embodiments of the present invention from different points of view are listed below. 1) A magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) disposed between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230); the sense magnetization (230) comprises a stable vortex configuration in the absence of an applied magnetic field; the magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and configured to pin the reference magnetization (210) by exchange bias at a first blocking temperature (Tb1); A magnetoresistive element (10) comprising a sense pinning layer (25) in contact with the sense layer (23) and configured to pin the sense magnetization (230) by exchange bias at a second blocking temperature (Tb2) lower than the first blocking temperature (Tb1), A magnetoresistive element, characterized in that the sensing layer (23) has a thickness between 15 nm and 80 nm. 2) The magnetoresistive element described in 1), wherein the sense pinning layer (25) is configured so that the strength of the exchange bias between the sense pinning layer (25) and the sense layer (23) is lower than the strength of the exchange bias between the reference pinning layer (24) and the reference layer (21). 3) The strength of the exchange bias between the sensing pinning layer (25) and the sensing layer (23) is 2x10 -8 J / cm 2 and 4x10 -8 J / cm 2 The magnetoresistive element according to 2), wherein the value is between . 4) The magnetoresistive element according to any one of 1) to 3), wherein the sensing layer (23) contains a CoFe, NiFe or CoFeB based alloy. 5) A magnetoresistive element according to any one of 1) to 4), wherein the reference pinning layer (24) and the sense pinning layer (25) contain or are made of an antiferromagnetic material. 6) The magnetoresistive element according to 5), wherein the reference pinning layer (24) and the sense pinning layer (25) contain an alloy based on Ir and Mn, Fe and Mn, Pt and Mn, Ni and Mn, Cr, NiO, or FeO. 7) annealing the magnetoresistive element (10) using an applied external magnetic field at an annealing temperature higher than the first blocking temperature (Tb1); annealing the magnetoresistive element (10) at an annealing temperature higher than the second blocking temperature (Tb2) and lower than the first blocking temperature (Tb1) in a state where no external magnetic field is applied; A method for manufacturing a magnetoresistive element according to any one of 1) to 6), comprising: 8) forming the magnetoresistive element (10) comprising depositing the reference pinning layer (24) and depositing the sense pinning layer (25); 7) The method according to 7), wherein the reference layer (21) is deposited on the reference pinning layer (24) and the sensing layer (23) is deposited on the sensing pinning layer (25). 9) A magnetic sensor comprising a plurality of the magnetoresistance elements according to any one of 1) to 6) above. [Explanation of symbols]

[0046] 2. Magnetoresistance element 21 Reference layer 210 Reference magnetization 22 Tunnel Barrier Layer 23 Detection Layer 230 Detecting Magnetism 231 cores 24 Reference pinning layer 25 Reference pinning layer 60 External magnetic field H ext External magnetic field H expl Emission magnetic field H nucl nucleation magnetic field S Sensitivity χ magnetic susceptibility

Claims

1. 1. A magnetoresistive element comprising a tunnel barrier layer disposed between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, the free-sensing magnetization comprises a stable vortex configuration in the absence of an applied magnetic field; the magnetoresistive element further comprises a reference pinning layer in contact with the reference layer and configured to pin the fixed reference magnetization by exchange bias at a first blocking temperature; a sense pinning layer in contact with the sense layer and configured to pin the free sense magnetization by exchange bias at a second blocking temperature lower than the first blocking temperature; the sensing layer having a thickness between 15 nm and 80 nm; The strength of the exchange bias between the sensing pinning layer and the sensing layer is 2×10 －８ J / cm ２ and 4x10 －８ J / cm ２ 1. A method for manufacturing a magnetoresistive element, wherein the method comprises: The method comprises: depositing a reference pinning layer, a reference layer, a tunnel barrier layer, a sensing layer, and a sensing pinning layer, wherein the strength of the exchange bias between the sensing pinning layer and the sensing layer is less than 2×10 －８ J / cm ２ and 4x10 －８ J / cm ２ and annealing the magnetoresistive element with an applied external magnetic field at an annealing temperature higher than the first blocking temperature; annealing the magnetoresistive element at an annealing temperature higher than the second blocking temperature and lower than the first blocking temperature in the absence of an external magnetic field.

2. forming the magnetoresistive element comprising depositing the reference pinning layer and depositing the sense pinning layer; The method of claim 1 , wherein the reference layer is deposited on the reference pinning layer and the sense layer is deposited on the sense pinning layer.

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