Heat-sensitive crystal, its manufacturing method, and electronic device

Abstract

To provide a thermosensitive crystal, a method for manufacturing the same, and an electronic apparatus.SOLUTION: A thermosensitive crystal 30 includes a crystal resonator 31, a thermistor 32, an insulating layer 33, and a first electrode structure 34. The crystal resonator 31 includes: a vibration element 311; and an airtight packaging structure 312 packaged on an outer periphery of the vibration element 311. The thermistor 32 is provided on one side of the airtight packaging structure 312. The insulating layer 33 covers at least one side of the thermistor 32 and the airtight packaging structure 312. The insulating layer 33 has via holes 331, and a conductive material is provided in the via hole 331. The insulation layer 33 has a heat insulation cavity 36, the heat insulation cavity 36 includes a sealed cavity and / or a semi-sealed cavity, and the heat insulation cavity 36 has gas or is in a vacuum state. The first electrode structure 34 is disposed on the insulating layer 33 and electrically connected to the thermistor 32 through the conductive material in the via hole 331.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present application relates to the technical field of temperature sensing oscillators (TSX), and in particular to a temperature sensing crystal, a manufacturing method thereof, and an electronic device. [Background technology]

[0002] Electronic devices typically require the use of a high-stability clock, such as a temperature-sensing crystal (TSX) combined with an external processing chip or a temperature-compensated crystal oscillator. Generally, the closer the thermistor is to the quartz crystal, the better, allowing the thermistor's temperature to be closer to that of the quartz crystal. However, quartz crystals generally belong to the piezoelectric category and have inherent hysteresis characteristics with respect to temperature. Therefore, the faster they respond to changes in external temperature, the better they can meet the low latency needs of conventional high-speed network communications.

[0003] However, as various electronic devices become more compact, the package size of thermosensitive crystals has also gradually become smaller. Existing thermistors generally require protection by being installed in a cavity, making it difficult to reduce their size. Furthermore, miniaturized thermosensitive crystals have problems such as a fast thermal response and the heat capacity of the ceramic base being limited by the material properties of the ceramic base itself, making it difficult to reduce their size. Another technical issue that must be considered for thermosensitive crystals is how to balance the requirements for conventional airtight packaging with the bending strength required when installed on a circuit board. Summary of the Invention [Problem to be solved by the invention]

[0004] Therefore, it is necessary to provide a heat-sensitive crystal, a manufacturing method thereof, and an electronic device that can accommodate miniaturization and limitations on heat capacity. [Means for solving the problem]

[0005] In a first aspect, a heat-sensitive crystal according to an embodiment of the present application includes a quartz crystal unit, a thermistor, an insulating layer, and a first electrode structure. The quartz crystal unit includes a vibration element and a hermetically sealed structure enclosed around the vibration element. The thermistor is provided on one side of the hermetically sealed structure. The insulating layer covers the thermistor and at least one side of the hermetically sealed structure and has a conductive hole and a thermal insulating cavity having a conductive material therein. The thermal insulating cavity includes a sealed cavity and / or a semi-sealed cavity, and the inside of the thermal insulating cavity contains gas or is in a vacuum state. The first electrode structure is provided in the insulating layer and is electrically connected to the thermistor via the conductive material in the conductive hole.

[0006] In one embodiment, the quartz crystal unit is a ceramic packaged quartz crystal unit, the hermetically sealed structure includes a ceramic base having a cavity, a cover plate covering the ceramic base, and a second electrode structure provided on the ceramic base, the ceramic base is provided with a conductor structure, the vibration element is provided in the cavity and connected to the ceramic base via an adhesive, and the second electrode structure is also electrically connected to the conductor structure and the thermistor.

[0007] In one embodiment, the quartz crystal unit is a quartz crystal unit in an all-crystal package, the hermetically sealed structure includes a first seal member provided on one side of the vibration element, a second seal member provided on the other side of the vibration element, and a second electrode structure provided on the first seal member, the first seal member, the vibration element, and the second seal member all include crystalline materials, the second electrode structure is electrically connected to the thermistor, the thermistor is provided on the first seal member and is electrically connected to the second electrode structure, and the insulating layer covers the thermistor and the first seal member.

[0008] In one embodiment, the second electrode structure is electrically connected to the thermistor, the insulating layer is provided on at least one side of the thermistor and the hermetic sealing structure by a first semiconductor deposition process, the conductive hole is formed in the insulating layer by a first semiconductor etching process, the conductive material in the conductive hole is formed in the conductive hole by a second semiconductor deposition process, the first electrode structure is formed in the insulating layer by the second semiconductor deposition process or a third semiconductor deposition process, and the second electrode structure is formed on the first sealing member by a fourth semiconductor deposition process.

[0009] In one embodiment, there is a gas within the sealed cavity, the gas being air.

[0010] In one embodiment, the sealed cavity is formed by partially etching the insulating layer using a third semiconductor etching process to form a semi-enclosed cavity, and further by another portion of the insulating layer covering the opening of the semi-enclosed cavity.

[0011] In one embodiment, the insulating cavity comprises the semi-enclosed cavity, which is a groove structure disposed around the periphery of the first electrode structure.

[0012] In a second aspect, a method for producing a heat-sensitive crystal according to the present invention includes the steps of providing a thermistor; providing a quartz crystal resonator including a vibration element and a hermetically sealed structure enclosed around the periphery of the vibration element, and placing the quartz crystal resonator on one side of the thermistor; forming an insulating layer having a conductive hole and a thermal insulating cavity on at least one side of the thermistor and the hermetically sealed structure, forming a conductive material in the conductive hole, the thermal insulating cavity including a sealed cavity and / or a semi-sealed cavity, and having a gas in the thermal insulating cavity or making the thermal insulating cavity a vacuum state; forming a first electrode structure on the insulating layer, such that the first electrode structure is electrically connected to the thermistor through the conductive material in the via hole.

[0013] In one embodiment, the quartz crystal is a ceramic packaged quartz crystal or an all-crystal packaged quartz crystal, the insulating layer is deposited on at least one side of the thermistor and the hermetically sealed structure by a first semiconductor deposition process, the via hole is formed in the insulating layer by a semiconductor etching process, the conductive material in the via hole is formed in the via hole by a second semiconductor deposition process, and the first electrode structure is formed in the insulating layer by a third semiconductor deposition process.

[0014] In one embodiment, the method for manufacturing the heat-sensitive crystal includes the following steps: the insulating cavity includes the sealed cavity, and there is a gas in the sealed cavity, the gas being air; the sealed cavity is formed by etching a part of the insulating layer by a third semiconductor etching process to form a semi-sealed cavity; and another part of the insulating layer covers an opening of the semi-sealed cavity; The insulating cavity includes the semi-enclosed cavity, which is a groove structure disposed around the outer periphery of the first electrode structure.

[0015] In a third aspect, an electronic device according to the present invention includes a circuit board provided with a heat-sensitive crystal according to any one of the above embodiments. [Effects of the Invention]

[0016] In the thermosensitive crystal, its manufacturing method, and electronic device provided by the present embodiment, the thermistor is directly mounted on one side of the hermetically sealed structure of the already-packaged quartz crystal unit, and an insulating layer is used to seal and protect the quartz crystal unit and the thermistor. This eliminates the need for a carrier substrate and its cavity for packaging the quartz crystal unit and thermistor. This avoids the difficulty of reducing the size of the thermosensitive crystal due to the carrier substrate and its cavity, and enables a miniaturized thermosensitive crystal package. Furthermore, because the insulating layer covers the thermistor, it is not exposed, providing better protection. In addition, the first electrode structure is provided on the insulating layer to buffer stress generated by client applications where the thermosensitive crystal is mounted on a circuit board. This improves the reliability of the thermosensitive crystal and the circuit board of the electronic device containing the thermosensitive crystal.

[0017] Furthermore, the insulating cavity provided by the insulating layer, for example when the insulating cavity is filled with gas, has a better insulating effect, increases thermal resistance, and can mitigate the thermal shock of an external heat source on the oscillator, and has a better heat retention effect, making the oscillation of the thermosensitive crystal watch more stable.In addition, the thermosensitive crystal generally uses a ceramic base and does not need to be directly welded to the circuit board, so bending strength does not need to be considered.The thermosensitive crystal can focus on optimizing the size, thickness, and / or material, which can improve the performance of the thermosensitive crystal and reduce design difficulty and cost. [Brief explanation of the drawings]

[0018] In order to more clearly describe the technical aspects of the embodiments of the present application or related technologies, the following briefly describes the drawings that need to be used in the embodiments or related technical descriptions. Obviously, the drawings in the following description are only embodiments of the present application, and those skilled in the art can obtain other drawings from the provided drawings without creative work. [Figure 1]1 is a schematic diagram of the cross-sectional structure of a thermosensitive crystal provided by Example 1 of the present application. [Figure 2] 1 is a top view schematic diagram of a thermosensitive crystal provided by Example 1 of the present application. [Figure 3] FIG. 1 is a schematic bottom view of a thermosensitive crystal provided by Example 1 of the present application. [Figure 4] FIG. 2 is a schematic diagram of the cross-sectional structure of the thermosensitive crystal provided by Example 2 of the present application. [Figure 5] FIG. 1 is a schematic diagram of the cross-sectional structure of a thermosensitive crystal provided by Example 3 of the present application. [Figure 6] FIG. 1 is a schematic bottom view of a thermosensitive crystal provided by Example 3 of the present application. [Figure 7] 1 is a flowchart of a method for producing a thermosensitive crystal provided by Example 4 of the present application. [Figure 8] FIG. 10 is a block schematic diagram of an electronic device provided by Example 5 of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0019] To facilitate understanding of the present application, the present application will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the present application are shown. However, the present application is not limited to the embodiments set forth herein, but may be embodied in many different forms. Furthermore, the purpose of providing these embodiments is to provide a more complete understanding of the disclosure of the present application.

[0020] It should be noted that when a component is referred to as being "fixed" to another component, it may be directly connected to the other component, or there may be intermediaries present. When a component is referred to as being "connected" to another component, it may be directly connected to the other component, or there may be intermediaries present. The terms "inner," "outer," "left," "right," and similar terms used herein are for illustrative purposes only and do not indicate the only embodiment.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting of the present application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0022] The thermosensitive crystals, the manufacturing methods thereof, and the electronic devices provided by the examples of the present application will be described in more detail below with reference to FIGS.

[0023] Example 1 Please refer to Figures 1 to 3. Figure 1 is a schematic diagram of the cross-sectional structure of a heat-sensitive crystal 30 provided in Example 1 of the present application. Figure 2 is a schematic top view of the heat-sensitive crystal 30 provided in Example 1 of the present application. Figure 3 is a schematic bottom view of the heat-sensitive crystal 30 provided in Example 1 of the present application. The heat-sensitive crystal 30 includes a quartz crystal 31, a thermistor 32, an insulating layer 33, and a first electrode structure 34.

[0024] The quartz crystal unit 31 includes a vibration element 311 and a sealing structure 312 enclosed around the vibration element 311. The quartz crystal unit 31 is understood to be a crystal resonator element that has already been packaged. In this embodiment, the quartz crystal unit 31 will be mainly described as a ceramic packaged quartz crystal unit.

[0025] The thermistor 32 is provided on one side of the hermetically sealed structure 312 described above.

[0026] The insulating layer 33 covers at least one side of the thermistor 32 and the hermetically sealed structure 312. The insulating layer 33 has conductive holes 331. The conductive holes 331 contain a conductive material. The first electrode structure 34 is disposed on the insulating layer 33 and is electrically connected to the thermistor 32 via the conductive material in the conductive holes 331. The first electrode structure 34 may be a pad structure such as a solder pad. The insulating layer 33 is made of a resin material. The first electrode structure 34 includes a plurality of first electrodes (i.e., a plurality of pads). The number of the conductive holes 331 can correspond to the number of the first electrodes. This allows the first electrodes to be electrically connected to the conductive material in the corresponding conductive holes 331. As shown in FIG. 3 , in this embodiment, the first electrode structure 34 has four first electrodes, which are disposed at the four corners of the bottom of the thermosensitive crystal 30.

[0027] In this embodiment, the insulating layer 33 further includes an insulating cavity 36. The insulating cavity 36 is a sealed cavity. The insulating cavity 36 contains a gas or is in a vacuum state. Preferably, the insulating cavity 36 contains a gas, such as air, but is not limited to air. The number of insulating cavities 36 may be one or more. This may be determined based on actual needs. It is understood that the sealed cavity is a cavity that does not communicate with the outer periphery of the heat-sensitive crystal 30. However, in other embodiments, the insulating cavity 36 may be a semi-sealed cavity. That is, the insulating cavity 36 is an open cavity or an openwork region that communicates with the outer periphery of the heat-sensitive crystal 30. For example, at least one, both, or multiple sides of the insulating cavity 36 have an opening that communicates with the outer periphery of the heat-sensitive crystal 30.

[0028] In the heat-sensitive crystal 30 provided by the embodiment of the present application, the thermistor 32 is directly mounted on one side of the hermetically sealed structure 312 of the packaged quartz crystal 31, and the insulating layer 33 serves to seal and protect the quartz crystal 31 and thermistor 32. This eliminates the need for a carrier substrate and its cavity to package the quartz crystal 31 and thermistor 32. This avoids the difficulty of reducing the size of the heat-sensitive crystal 30 due to the carrier substrate and its cavity, and allows for a miniaturized heat-sensitive crystal package. Furthermore, because the insulating layer 33 covers the thermistor 32, it is not exposed, providing better protection for the thermistor 32. Furthermore, the first electrode structure 34 is mounted on the insulating layer 33, providing a buffering function and absorbing stress generated by the client application where the heat-sensitive crystal 30 is mounted on a circuit board. This improves the reliability of the heat-sensitive crystal 30 and the circuit board containing the heat-sensitive crystal 30.

[0029] Furthermore, the insulating cavity 36 in the insulating layer 33, for example when the insulating cavity 36 is filled with gas, can provide better insulating effects, increase thermal resistance, and mitigate the thermal shock of an external heat source on the oscillator, as well as provide better heat retention, making the oscillation of the watch with the thermosensitive crystal 30 more stable. In addition, the thermosensitive crystal 30 generally uses a ceramic base and does not need to be directly welded to the circuit board, so bending strength does not need to be considered. This allows the thermosensitive crystal 30 to focus on optimizing the dimensions, thickness, and / or materials, improving the performance of the thermosensitive crystal 30 and reducing design complexity and costs.

[0030] Specifically, the hermetically sealed structure 312 may include a ceramic base 3121 having a cavity 3121a, a cover plate 3122 covering the ceramic base 3121, and a second electrode structure 3123 provided on the ceramic base 3121. A conductor structure 3121b may be provided within the ceramic base 3121. The vibration element 311 may be provided within the cavity 3121a and electrically connected to the conductor structure 3121b via a conductive adhesive 3121c (e.g., conductive rubber). The second electrode structure 3123 is further electrically connected to the aforementioned conductor structure 3121b. The second electrode structure 3123 is further electrically connected to the thermistor 32. This electrically connects the thermistor 32 to the quartz crystal unit 31. The second electrode structure 3123 may be a pad structure. The second electrode structure 3123 may include a plurality of second electrodes (i.e., a plurality of pads). The number of the conductor structures 3121b can correspond to the number of the second electrodes. Therefore, the second electrodes can be electrically connected to the corresponding conductor structures 3121b. The vibration element 311 is made of a crystalline material.

[0031] Furthermore, in this embodiment, the aforementioned second electrode structure 3123 can be electrically connected to the thermistor 32 .

[0032] In this embodiment, the insulating layer 33 may be deposited on one side of the thermistor 32 and the hermetic sealing structure 312 by a first semiconductor deposition process. The conductive hole 331 is formed in the insulating layer 33 by semiconductor etching. The aforementioned conductive material is formed in the conductive hole 331 by a second semiconductor deposition process. The first electrode structure 34 is formed in the insulating layer 33 by a third semiconductor deposition process. The semiconductor etching process achieves patterning of the material layer to be etched by sequentially depositing the material to be etched and a photosensitive etchant and exposing them to light in accordance with a patterned mask.

[0033] <Example 2> Please refer to Figure 4. Figure 4 is a cross-sectional view of a heat-sensitive crystal 40 provided in Example 2 of the present application. The structure of the heat-sensitive crystal 40 in Example 2 is basically the same as that of the heat-sensitive crystal 30 in Example 1, with the only difference being that the reference numerals for corresponding components are different. That is, the above description of the heat-sensitive crystal 30 in Example 1 can also basically be applied to the heat-sensitive crystal 40 in Example 2. The following description will mainly focus on the differences between the heat-sensitive crystal 40 in Example 2 and the heat-sensitive crystal 30 in Example 1.

[0034] In the heat-sensitive crystal 40 of Example 2, the first seal member 4124, the second seal member 4125, and the vibration element 411 are all made of crystalline materials. That is, the quartz crystal unit 41 is a fully crystalline packaged quartz crystal unit. The hermetically sealed structure 412 includes a first seal member 4124 provided on one side of the vibration element 411, a second seal member 4125 provided on the other side of the vibration element 411, and a second electrode structure 4123 disposed on the first seal member 4124. The second electrode structure 4123 is also electrically connected to the thermistor 42.

[0035] Specifically, in this embodiment, the thermistor 42 is provided on the first sealing member 4124 and is electrically connected to the second electrode structure 4123. The insulating layer 43 covers the thermistor 42 and the first sealing member 4124.

[0036] In this embodiment, the insulating layer 43 further includes an insulating cavity 46. The insulating cavity 46 is a sealed cavity. The insulating cavity 46 contains gas or is in a vacuum state. Preferably, the insulating cavity 46 contains gas such as air, but is not limited to air. The number of insulating cavities 46 may be one or more, and may be specifically set according to actual needs.

[0037] Similar to the first embodiment, the thermistor 42 is directly mounted on one side of the hermetically sealed structure 412 of the packaged quartz crystal 41. Furthermore, the insulating layer 43 provides a sealing protection for the quartz crystal 41 and thermistor 42. This eliminates the need for a carrier substrate and its cavity for packaging the quartz crystal 41 and thermistor 42. This avoids the difficulty of reducing the size of the thermosensitive crystal 40 due to the carrier substrate and its cavity, enabling a miniaturized thermosensitive crystal package. Furthermore, because the insulating layer 43 covers the thermistor 42, it is not exposed, providing better protection for the thermistor 42. Furthermore, the first electrode structure 44 is mounted on the insulating layer 43, providing a buffering function and absorbing stress generated by the client application where the thermosensitive crystal 40 is mounted on the circuit board. This improves the reliability of the thermosensitive crystal 40 and the circuit board containing the thermosensitive crystal 40.

[0038] Furthermore, the insulating cavity 46 in the insulating layer 43, for example when there is air in the insulating cavity 46, can have a better insulating effect, increase thermal resistance, and mitigate the thermal shock of an external heat source on the oscillator, and can also have a better heat retention effect, making the oscillation of the watch with the heat-sensitive crystal 40 more stable. Also, the heat-sensitive crystal 40 generally uses a ceramic base and does not need to be directly welded to the circuit board, so bending strength does not need to be considered. The heat-sensitive crystal 40 can be designed by focusing on optimizing the dimensions, thickness, and / or materials, which can improve the performance of the heat-sensitive crystal 40 and reduce design difficulty and cost.

[0039] Example 3 Please refer to Figures 5 and 6 together. Figure 5 is a cross-sectional view of the heat-sensitive crystal 50 provided in Example 3 of the present application, and Figure 6 is a schematic bottom view of the heat-sensitive crystal 50 provided in Example 3 of the present application. The structure of the heat-sensitive crystal 50 in Example 3 is basically the same as that of the heat-sensitive crystal 30 in Example 1, with the only difference being that the reference numerals for corresponding components are different. That is, the above description of the heat-sensitive crystal 30 in Example 1 can also basically be applied to the heat-sensitive crystal 50 in Example 3. The following description will mainly focus on the differences between the heat-sensitive crystal 50 in Example 3 and the heat-sensitive crystal 30 in Example 1.

[0040] In the heat-sensitive crystal 50, the insulating cavity 56 of the insulating layer 53 further includes a semi-enclosed cavity 561. In this embodiment, the semi-enclosed cavity 561 is a groove structure provided around the outer periphery of the first electrode structure.

[0041] The semi-enclosed cavity 561 can better achieve technical effects such as heat insulation and facilitating heat dissipation from the bottom, thereby improving the reliability of the heat-sensitive crystal 50 and the circuit board having the heat-sensitive crystal 50.

[0042] Example 4 Please refer to Figures 1 to 7. Figure 7 is a flowchart of a method for producing a thermosensitive crystal provided by Example 4 of the present application. The above-mentioned production method includes the following steps S71 to S74.

[0043] In step S71, a thermistor is prepared. As shown in Figures 1 to 4, the thermistor may be the thermistor 32, 42, or 52 described in any one of the first to third embodiments.

[0044] In step S72, a quartz crystal resonator is provided and placed on one side of the thermistor. The quartz crystal resonator includes a resonator element and a hermetically sealed structure encapsulated around the resonator element. Specifically, as shown in FIGS. 1 to 6, the quartz crystal resonator may be a ceramic packaged quartz crystal resonator or an all-crystal packaged quartz crystal resonator, i.e., the quartz crystal resonator 31, 41, or 51 described in any of Examples 1 to 3, and will not be further described here.

[0045] In step S73, an insulating layer having a conductive hole and a thermal insulation cavity is formed on at least one side of the thermistor and the hermetically sealed structure. The conductive hole contains a conductive material. The thermal insulation cavity may be a sealed cavity and / or a semi-sealed cavity. The thermal insulation cavity contains a gas or is a vacuum. The structures of the insulating layers 33, 43, 53, the conductive holes 331, 431, 531, and the thermal insulation cavities 36, 46, 56, as well as the conductive material of the conductive holes 331, 431, 531, have been described in detail in Example 1, and will not be further described here.

[0046] In step S74, a first electrode structure is formed on the insulating layer, and the first electrode structure is electrically connected to the thermistor through the conductive material in the conductive hole. Note that the first electrode structures 34, 44, and 54 have been described in detail in Example 1 and will not be further described here.

[0047] <Example 5> Please refer to FIG. 8. FIG. 8 is a block schematic diagram of an electronic device 80 provided by a fifth embodiment of the present invention. The electronic device 80 according to the fifth embodiment may be, but is not limited to, a portable electronic device such as a mobile phone, a tablet, a display, a laptop, or a digital camera. The electronic device 80 may include a circuit board 81 on which the heat-sensitive crystals 30, 40, and 50 according to any of the above-described embodiments are provided.

[0048] The technical features in the above-described embodiments may be combined in any desired manner. For the sake of brevity, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered within the scope described in this specification. The above-described embodiments represent only some embodiments of the present application, and although the descriptions are more specific and detailed, they should not be understood as limiting the patent scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the spirit of the present application, and these also fall within the scope of protection of the present application. Therefore, the scope of protection sought by the present invention should be dictated by the appended claims. [Explanation of symbols]

[0049] 311 Vibration element 312, 412, 512 Hermetically sealed structure 331 Conduction hole 30, 40, 50 Heat-sensitive crystals 31, 41, 51 crystal oscillator 32, 42, 52 thermistor 33, 43, 53 Insulation layer 34, 44, 54 1st electrode structure 331, 431, 531 Conduction holes 36, 46, 56 Insulated Cavity 44 First electrode structure 80 Electronic equipment 81 Circuit Board 411 Vibration element 561 Semi-sealed cavity 3121 Ceramic substrate 3121a Cavity 3121b Conductor Structure 3121c Conductive Adhesive 3122 Lid plate 3123 Second electrode structure 4123 Second electrode structure 4124 First sealing member 4125 Second sealing member 5121 Ceramic substrate 5122 Lid plate 5121a cavity 5121b Conductor Structure 5121c Conductive Adhesive

Claims

1. a quartz crystal unit including a vibration element and a hermetically sealed structure that seals the outer periphery of the vibration element; a thermistor provided on one side of the hermetically sealed structure; an insulating layer covering at least one side of the thermistor and the hermetically sealed structure and having a conductive hole therein containing a conductive material; a first electrode structure provided on the insulating layer and electrically connected to the thermistor via the conductive material in the conductive hole; the insulating layer is provided on at least the one side of the thermistor and the hermetically sealed structure by a first semiconductor deposition process, the conductive hole is formed in the insulating layer by a first semiconductor etching process, the conductive material in the conductive hole is formed in the conductive hole by a second semiconductor deposition process, and the first electrode structure is formed in the insulating layer by the second semiconductor deposition process or a third semiconductor deposition process; The insulating layer further has an insulating cavity, the insulating cavity including a sealed cavity or a semi-sealed cavity, and the sealed cavity is formed by partially etching the insulating layer using a third semiconductor etching process to form a semi-sealed cavity, and further by another part of the insulating layer covering the opening of the semi-sealed cavity.

2. The heat-sensitive crystal of claim 1, characterized in that the quartz crystal is a ceramic packaged quartz crystal, the hermetically sealed structure includes a ceramic base having a cavity, a cover plate covering the ceramic base, and a second electrode structure provided on the ceramic base, the ceramic base is provided with a conductor structure, the vibration element is provided in the cavity and connected to the ceramic base via an adhesive, and the second electrode structure is also electrically connected to the conductor structure and the thermistor.

3. the quartz crystal is a whole crystal package quartz crystal; the hermetically sealed structure includes a first seal member provided on one side of the vibration element, a second seal member provided on the other side of the vibration element, and a second electrode structure provided on the first seal member; the first seal member, the vibration element, and the second seal member all contain a crystalline material; the second electrode structure is electrically connected to the thermistor; the thermistor is provided in the first sealing member and is electrically connected to the second electrode structure; 2. The heat-sensitive crystal according to claim 1, wherein the insulating layer covers the thermistor and the first sealing member.

4. 4. The heat-sensitive crystal of claim 3, wherein the second electrode structure is electrically connected to the thermistor, and the second electrode structure is formed on the first sealing member by a fourth semiconductor deposition process.

5. 2. The heat-sensitive crystal of claim 1, wherein the sealed cavity contains a gas, the gas being air.

6. 2. The heat-sensitive crystal of claim 1, wherein the semi-enclosed cavity is a groove structure provided around the periphery of the first electrode structure.

7. providing a thermistor; providing a quartz crystal unit including a vibration element and a hermetically sealed structure that seals the outer periphery of the vibration element, and placing the quartz crystal unit on one side of the thermistor; forming an insulating layer having a conductive hole on at least one side of the thermistor and the hermetically sealed structure, and forming a conductive material in the conductive hole; forming a first electrode structure on the insulating layer, and the first electrode structure is electrically connected to the thermistor through the conductive material in the via hole; the insulating layer is deposited on at least one side of the thermistor and the hermetically sealed structure by a first semiconductor deposition process, the conductive hole is formed in the insulating layer by a first semiconductor etching process, the conductive material in the conductive hole is formed in the conductive hole by a second semiconductor deposition process, and the first electrode structure is formed in the insulating layer by the second semiconductor deposition process or a third semiconductor deposition process; The insulating layer further has an insulating cavity, the insulating cavity including a sealed cavity or a semi-sealed cavity, and the sealed cavity is formed by partially etching the insulating layer using a third semiconductor etching process to form a semi-sealed cavity, and further by another part of the insulating layer covering the opening of the semi-sealed cavity.

8. 8. The method for manufacturing a heat-sensitive crystal according to claim 7, wherein the quartz crystal is a ceramic package quartz crystal or an all-crystal package quartz crystal.

9. There is a gas in the sealed cavity, the gas being air; 8. The method for manufacturing a heat-sensitive crystal according to claim 7, wherein the semi-closed cavity is a groove structure provided around the outer periphery of the first electrode structure.

10. An electronic device comprising a circuit board provided with the heat-sensitive crystal according to any one of claims 1 to 6.

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