Circuit components and semiconductor devices

Abstract

This circuit component is provided with a resin composite body and a wiring line. The resin composite body is composed of a resin material and a plurality of magnetic particles that are contained in the resin material. The wiring line is formed on the surface of the resin composite body. The plurality of magnetic particles are dispersed in the resin material.

Description

[Technical Field]

[0001] The present disclosure relates to a circuit component and a semiconductor device. [Background technology]

[0002] Conventionally, circuit components are mounted in various electronic devices, such as industrial equipment, home appliances, information terminals, and automotive equipment. Examples of such circuit components include magnetic components such as inductors and transformers. For example, Patent Document 1 discloses an example of a conventional inductor component. The inductor component described in Patent Document 1 has an insulating layer and a wiring pattern. The insulating layer and the wiring pattern are alternately laminated. The wiring pattern is, for example, spiral-shaped, and a magnetic field is generated when a current flows through the wiring pattern. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-109097 Summary of the Invention [Problem to be solved by the invention]

[0004] As electronic devices incorporating circuit components become more sophisticated, improvements in the characteristics of these circuit components are being sought. For example, when the circuit components are magnetic, improvements in inductance are required. Some circuit components have been designed to improve inductance by using rod-shaped or annular magnetic cores (iron cores). However, when using magnetic cores, core loss (iron loss) occurs due to the magnetic properties of the magnetic core.

[0005] In view of the above circumstances, one object of the present disclosure is to provide a circuit component that can suppress iron loss while improving inductance value, and another object is to provide a semiconductor device including such a circuit component. [Means for solving the problem]

[0006] A circuit component provided by a first aspect of the present disclosure comprises a resin composite containing a plurality of magnetic particles in a resin material, and wiring formed on a surface of the resin composite, and is characterized in that the plurality of magnetic particles are dispersed in the resin material.

[0007] A semiconductor device provided by a second aspect of the present disclosure includes the circuit component provided by the first aspect, and a transistor conducting to the circuit component. [Effects of the Invention]

[0008] The circuit components of the present disclosure enable both improved inductance and reduced iron loss, and the semiconductor device of the present disclosure includes circuit components that achieve both improved inductance and reduced iron loss, thereby improving performance. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view showing a circuit component according to a first embodiment. [Figure 2] FIG. 1 is a plan view showing a circuit component according to a first embodiment. [Figure 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. [Figure 4] 4 is a partially enlarged cross-sectional view of a part of FIG. 3, showing a cross-sectional schematic diagram of a resin composite 2. FIG. [Figure 5] FIG. 2 is a plan view showing a step of the method for manufacturing the circuit component according to the first embodiment. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 5. [Figure 7] FIG. 2 is a plan view showing a step of the method for manufacturing the circuit component according to the first embodiment. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 7. [Figure 9] 2 is a cross-sectional view showing a step in the method for manufacturing the circuit component according to the first embodiment. FIG. [Figure 10] 2 is a cross-sectional view showing a step in the method for manufacturing the circuit component according to the first embodiment. FIG. [Figure 11] 1 is a front view showing a semiconductor device including a circuit component according to a first embodiment. [Figure 12] FIG. 10 is a plan view showing a circuit component according to a modified example of the first embodiment. [Figure 13] FIG. 4 is a cross-sectional view showing a circuit component according to a modified example of the first embodiment. [Figure 14] FIG. 4 is a cross-sectional view showing a circuit component according to a modified example of the first embodiment. [Figure 15] FIG. 4 is a cross-sectional view showing a circuit component according to a modified example of the first embodiment. [Figure 16] FIG. 10 is a perspective view showing a circuit component according to a second embodiment. [Figure 17] FIG. 10 is a plan view showing a circuit component according to a second embodiment. [Figure 18] FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] Preferred embodiments of the circuit component and semiconductor device of the present disclosure will be described below with reference to the drawings. In the following, identical or similar components will be designated by the same reference numerals and redundant description will be omitted.

[0011] A circuit component A1 according to a first embodiment will be described with reference to Figures 1 to 4. As shown in these figures, the circuit component A1 includes a support substrate 1, a resin composite 2, and wiring 3.

[0012] FIG. 1 is a perspective view showing a circuit component A1. In FIG. 1, a resin composite 2 is indicated by an imaginary line (two-dot chain line). FIG. 2 is a plan view showing the circuit component A1. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. FIG. 4 is a partially enlarged cross-sectional view of a portion of FIG. 3, and is a schematic cross-sectional view showing the resin composite 2.

[0013] For convenience of explanation, three mutually orthogonal directions, namely, the x direction, the y direction, and the z direction, will be referred to. The z direction is the thickness direction of the circuit component A1. The x direction is the left-right direction in the plan view of the circuit component A1 (see FIG. 2). The y direction is the up-down direction in the plan view of the circuit component A1 (see FIG. 2). In the following explanation, "plan view" refers to the view in the z direction.

[0014] The circuit component A1 is a magnetic component that obtains inductance due to a current flowing through the wiring 3. In this embodiment, the circuit component A1 is an inductor. The size of the circuit component A1 is not particularly limited, but as an example, the dimensions in the x and y directions are each about 1 mm to 10 mm.

[0015] The support substrate 1 supports the resin composite 2 and the wiring 3. The support substrate 1 has, for example, a rectangular shape in a plan view. The support substrate 1 is an insulating substrate, such as a silicon substrate, a glass epoxy substrate, a resin substrate, or a ceramic substrate.

[0016] The resin composite 2 contains a plurality of magnetic particles 21 in a resin material 20. The volume occupancy of the plurality of magnetic particles 21 in the resin composite 2 is, for example, 60% or more and 90% or less. The relative magnetic permeability of the resin composite 2, that is, the magnetic permeability of the composite of the resin material 20 and the plurality of magnetic particles 21, is, for example, 10 or more. The relative magnetic permeability of the resin composite 2 is not limited to 10 or more, but is preferably, for example, 10 or more in order to obtain a circuit component A1 with a practical inductance value. The resin composite 2 has a rectangular shape in a planar view. The resin material 20 is, for example, a thermosetting resin, such as an epoxy resin or a phenolic resin. The resin composite 2 is formed on a support substrate 1. The plurality of magnetic particles 21 include a plurality of first particles 22 and a plurality of second particles 23.

[0017] As shown in FIG. 4, the plurality of first particles 22 are dispersed in the resin material 20. That is, the plurality of first particles 22 are present in the resin material 20 while being spaced apart from one another. Each of the plurality of first particles 22 includes a first core portion 221 and an insulating coating film 222. As an example, the distance between any two first particles 22 is greater than the diameter of each of the first particles 22 (or the first core portion 221), but the present disclosure is not limited to this. For example, any two first particles 22 may be present in the resin material 20 such that the insulating coating films 222 do not contact each other. In this case, the distance between the two first particles 22 may be smaller than the diameter (or radius) of each of the first particles 22 (or the first core portion 221).

[0018] The first core portion 221 is made of a metal magnetic powder. The metal magnetic powder is preferably a material containing a metal element that exhibits ferromagnetism by itself, and one example is a material containing one or more of Fe, Co, and Ni (Fe, Co, Ni, and alloys or compounds thereof). The insulating coating film 222 covers the entire surface of the first core portion 221. The insulating coating film 222 is made of, for example, an oxide of the first core portion 221. The insulating coating film 222 may be made of silicon oxide, silicon nitride, insulating resin, or the like instead of the oxide of the first core portion 221. Since the insulating coating film 222 covers the entire surface of the first core portion 221, each first particle 22 is insulating. The particle size of the first core portion 221 is, for example, approximately several hundred nanometers to several tens of micrometers, and the film thickness of the insulating coating film 222 is, for example, approximately several nanometers to several tens of nanometers. Each first particle 22 does not necessarily have to have the insulating coating film 222 covering the entire surface of the first core portion 221, but the entire particle may be made of an oxide-based magnetic material such as ferrite, thereby making it insulating.

[0019] Each of the plurality of second particles 23 contacts the wiring 3 in the resin material 20. Each of the plurality of second particles 23 includes a second core portion 231.

[0020] Second core portion 231 is made of metal magnetic powder. This metal magnetic powder is the same as the metal magnetic powder of first core portion 221. In other words, the metal magnetic powder of second core portion 231 is preferably made of a material containing a metal element that exhibits ferromagnetism by itself, and one example is a material containing one or more of Fe, Co, and Ni. The particle size of second core portion 231 is the same as the particle size of first core portion 221.

[0021] As shown in FIG. 4 , the plurality of second particles 23 may have an insulating coating film 232 formed thereon so as to expose at least a portion of the surface of the second core portion 231. The constituent material of the insulating coating film 232 is, for example, an oxide of the second core portion 231. The constituent material of the insulating coating film 222 and the insulating coating film 232 is the same. The constituent material of the insulating coating film 232 may not be the oxide of the second core portion 231, but may be silicon oxide, silicon nitride, an insulating resin, or the like. In the second particle 23 having the insulating coating film 232, the surface of the second core portion 231 exposed from the insulating coating film 232 is in contact with the wiring 3. The thickness of the insulating coating film 232 is the same as the thickness of the insulating coating film 222.

[0022] The wiring 3 is the functional center of the circuit component A1. The circuit component A1 includes, for example, an inductor formed by the wiring 3. In this embodiment, the wiring 3 is wound in a toroidal shape as shown in FIG. 1. As shown in FIG. 2, the wiring 3 has a ring shape in plan view. The constituent material of the wiring 3 is not particularly limited as long as it is a conductive material, but considering the wiring resistance and the formation method (forming at least a portion by plating), it is preferable to use, for example, Cu or a Cu alloy. The wiring 3 includes a first wiring layer 31, a second wiring layer 32, a conductive portion 33, a connecting portion 34, and a pair of terminal portions 35.

[0023] The first wiring layer 31 and the second wiring layer 32 face each other with the resin composite 2 interposed therebetween. In the example shown in Fig. 3, the first wiring layer 31 and the second wiring layer 32 are respectively disposed on each surface of the resin composite 2 in the z direction. The first wiring layer 31 and the second wiring layer 32 are, for example, plating layers. The first wiring layer 31 and the second wiring layer 32 are each formed in a circular pattern in a plan view.

[0024] The first wiring layer 31 is separated into a plurality of first wiring portions 311. The second wiring layer 32 is separated into a plurality of second wiring portions 321. The first wiring portions 311 and the second wiring portions 321 are arranged so as to partially overlap each other in a planar view. In the example shown in FIG. 2, the first wiring portions 311 and the second wiring portions 321 are arranged so as to be offset by about half in the toroidal direction in a planar view. The plurality of first wiring portions 311 and the plurality of second wiring portions 321 are each formed in a tapered shape that increases in width radially outward and decreases in width radially inward in a planar view. The plurality of first wiring portions 311 and the plurality of second wiring portions 321 are each approximately fan-shaped. Each of the plurality of second particles 23 is in contact with either the plurality of first wiring portions 311 (first wiring layer 31) or the plurality of second wiring portions 321 (second wiring layer 32). One of the plurality of first wiring portions 311 and one of the plurality of second wiring portions 321 are each connected to the coupling portion 34.

[0025] The conductive portion 33 connects the first wiring layer 31 and the second wiring layer 32. The conductive portion 33 penetrates the resin complex 2 in the z direction. The conductive portion 33 includes a plurality of vias 331.

[0026] Each of the multiple vias 331 penetrates the resin composite 2 in the z direction, and electrically connects one of the multiple first wiring portions 311 to one of the multiple second wiring portions 321. Each via 331 is formed in a region where the corresponding first wiring portion 311 overlaps the corresponding second wiring portion 321 in a plan view. One edge of each via 331 in the z direction is connected to the corresponding first wiring portion 311, and the other edge of each via 331 in the z direction is connected to the corresponding second wiring portion 321.

[0027] The vias 331 include inner vias 331a and outer vias 331b. In plan view, the inner vias 331a connect the first wiring portions 311 and the second wiring portions 321 to each other on the inner side in the radial direction of the wiring 3. The outer vias 331b connect the first wiring portions 311 and the second wiring portions 321 to each other on the outer side in the radial direction of the wiring 3.

[0028] Each first wiring portion 311 overlaps two second wiring portions 321 adjacent to it in the circumferential direction (toroidal direction) of the wiring 3 in a plan view, with an inner via 331a arranged in the region where the first wiring portion 311 overlaps with one of the second wiring portions 321, and an outer via 331b arranged in the region where the first wiring portion 311 overlaps with the other second wiring portion 321. Thus, the inner via 331a and outer via 331b connected to a certain first wiring portion 311 are each connected to the second wiring portion 321 adjacent to it in the toroidal direction of the wiring 3. With this configuration, current flows from the first wiring portion 311 to the adjacent first wiring portion 311 in the toroidal direction, passing through the inner via 331a, second wiring portion 321, and outer via 331b in this order. 2, the current flowing through each first wiring portion 311 flows radially inward of the wiring 3, and the current flowing through each second wiring portion 321 flows radially outward of the wiring 3. This current path goes around in the toroidal direction (clockwise in the example shown in FIG. 2), thereby forming a toroidal current path from the first wiring portion 311 connected to the coupling portion 34 to the second wiring portion 321 connected to the coupling portion 34.

[0029] The wiring 3 is designed so that the self-inductance has a predetermined value due to the first wiring layer 31, the second wiring layer 32, and the conductive portion 33. It is desirable that the self-inductance be, for example, 10 nH or more.

[0030] The coupling portions 34 respectively connect the first wiring layer 31 and the second wiring layer 32 to the pair of terminal portions 35. The coupling portions 34 include one that connects the first wiring layer 31 to one of the pair of terminal portions 35 and one that connects the second wiring layer 32 to the other of the pair of terminal portions 35.

[0031] The pair of terminal portions 35 are input / output terminals for current in the circuit component A1. One of the pair of terminal portions 35 is connected to a certain first wiring portion 311 among the plurality of first wiring portions 311 via a connecting portion 34. The other of the pair of terminal portions 35 is connected to a certain second wiring portion 321 among the plurality of second wiring portions 321 via the connecting portion 34. A current input to one terminal portion 35 is output from the other terminal portion 35. In the example shown in FIGS. 1 and 2, each terminal portion 35 is arranged on the upper surface (one surface in the z direction) of the resin composite 2, but the arrangement of each terminal portion 35 can be changed as appropriate.

[0032] Next, a method for manufacturing the circuit component A1 will be described with reference to Figs. 5 to 10. Figs. 5 to 10 are diagrams showing steps in the method for manufacturing the circuit component A1. Figs. 5 and 7 are plan views. Figs. 6, 8, and 9 are cross-sectional views. Fig. 6 is a cross-sectional view taken along line VI-VI in Fig. 5. Fig. 8 is a cross-sectional view taken along line VIII-VIII in Fig. 7. Fig. 10 is a schematic diagram showing an enlarged portion of Fig. 9.

[0033] First, prepare a support substrate 1. The support substrate 1 to be prepared is, for example, an insulating substrate, and may be a silicon substrate, a glass epoxy substrate, a ceramic substrate, etc. The support substrate 1 has, for example, a rectangular shape in a plan view.

[0034] Next, a second wiring layer 32 is formed on the support substrate 1. In forming the second wiring layer 32, for example, a plating layer is formed on the entire upper surface of the support substrate 1, and the plating layer is patterned by photolithography as shown in FIGS. 5 and 6. The constituent material of the plating layer is, for example, Cu or a Cu alloy. The patterned plating layer forms the second wiring layer 32 (plurality of second wiring portions 321) as shown in FIGS. 5 and 6. In this embodiment, as shown in FIG. 5, the patterned plating layer also forms connecting portions 34 connected to the second wiring layer 32.

[0035] Next, a resin complex 2 is formed on the support substrate 1 so as to cover the second wiring layer 32. The resin complex 2 is made of a resin material 20 containing a plurality of magnetic particles 21. In the resin complex 2 formed on the support substrate 1, all of the plurality of magnetic particles 21 are first particles 22, and include a first core portion 221 made of metal magnetic powder and an insulating coating film 222 which is an oxide of the metal magnetic powder. In other words, in this state, the surfaces of all of the magnetic particles 21 are covered with the insulating coating film.

[0036] 7 and 8, a plurality of vias 331 (conductive portions 33) are formed. The vias 331 may be formed by a known method. Each of the formed vias 331 penetrates the resin composite 2 in the z direction and connects to the second wiring layer 32. In this embodiment, as shown in FIG. 7, when the vias 331 (conductive portions 33) are formed, a part of the connecting portion 34 is also formed.

[0037] Next, a first wiring layer 31 is formed on the upper surface of the resin composite 2. To form the first wiring layer 31, a laser beam is irradiated onto a region of the upper surface of the resin composite 2 where the first wiring layer 31 is to be formed. When the laser beam is irradiated onto the resin composite 2, the resin material 20 melts. Some of the melted resin material 20 may disappear. In FIGS. 9 and 10, the region recessed from the upper surface of the resin composite 2 is the region irradiated with the laser beam. At this time, as shown in FIG. 10, a plurality of magnetic particles 21 dispersed in the molten resin material 20 emerge from the surface of the resin composite 2. The insulating coating film 222 on each of the exposed magnetic particles 21 is partially or completely destroyed by the laser beam irradiation. Therefore, each of the exposed magnetic particles 21 is a second particle 23, as shown in FIG. 10. That is, a plurality of second particles 23 emerge from the region irradiated with the laser beam. Thereafter, electroless plating is performed using the plurality of magnetic particles 21 (a plurality of second particles 23) exposed on the upper surface of the resin composite 2 as seeds. As a result, a plating layer is deposited in contact with the plurality of second particles 23. The constituent material of the plating layer is, for example, Cu or a Cu alloy. The deposited plating layer forms the first wiring layer 31 (plurality of first wiring portions 311). In this embodiment, the deposited plating layer also forms a connecting portion 34 and a pair of terminal portions 35 connected to the first wiring layer 31.

[0038] The circuit component A1 shown in FIGS. 1 to 4 is manufactured through the above steps. Note that the above-described manufacturing method is merely an example and is not limited thereto. It is possible to modify it as follows. In the above-described manufacturing method, the second wiring layer 32 is formed by patterning a plating layer formed on the entire upper surface of the support substrate 1. However, the second wiring layer 32 may be formed by other methods. For example, a resin layer made of the same material as the resin complex 2 is formed on the upper surface of the support substrate 1, and the second particles 23 are exposed by irradiating the resin layer with a laser. The exposed second particles 23 may then be used as seeds for electroless plating to form the second wiring layer 32. Alternatively, the first wiring layer 31 and the conductive portions 33 may be formed simultaneously. For example, after forming the resin complex 2, laser processing is performed on the areas where the first wiring layer 31 and the conductive portions 33 are to be formed, without forming the conductive portions 33. Then, electroless plating of the first wiring layer 31 and the conductive portions 33 is performed. This allows the first wiring layer 31 and the conductive portion 33 to be formed at the same time.

[0039] Next, a semiconductor device B1 using the circuit component A1 will be described with reference to Fig. 11. As shown in Fig. 11, the semiconductor device B1 includes the circuit component A1, a transistor Tr, a capacitor C, a circuit board 91, and a sealing member 92. Fig. 11 is a front view showing the semiconductor device B1. In Fig. 11, the sealing member 92 is indicated by an imaginary line (a two-dot chain line).

[0040] The semiconductor device B1 has, for example, a BGA (Ball Grid Array) type package structure as shown in Fig. 11. Unlike the example shown in Fig. 11, the semiconductor device B1 may have a package structure other than the BGA type. The semiconductor device B1 is, for example, a power supply module with a built-in transistor Tr.

[0041] The circuit board 91 is, for example, a printed circuit board. The circuit board 91 supports the circuit component A1, the transistor Tr, the capacitor C, and the sealing member 92. A wiring pattern (not shown) is formed on the circuit board 91, and the circuit component A1, the transistor Tr, the capacitor C, and the like are appropriately electrically connected via the wiring pattern. When the circuit component A1 is mounted on the circuit board 91, the surface on which each terminal portion 35 is formed faces the circuit board 91, and each terminal portion 35 is joined to the wiring pattern. In an example in which the semiconductor device B1 has a BGA-type package structure, as shown in FIG. 11 , the circuit board 91 has a plurality of small ball-shaped electrodes 911 formed on a surface (bottom surface) opposite in the z direction from a surface (top surface) on which the circuit component A1, the transistor Tr, the capacitor C, the sealing member 92, and the like are arranged.

[0042] The sealing member 92 is formed on the circuit board 91, and covers the circuit components A1, the transistor Tr, the capacitor C, etc. The constituent material of the sealing member 92 is an insulating resin, for example, an epoxy resin.

[0043] The transistor Tr is, for example, a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a high electron mobility transistor (HEMT), etc. The constituent material of the transistor Tr is a semiconductor material such as Si, SiC, or GaN.

[0044] The circuit component A1 and the semiconductor device B1 have the following advantages.

[0045] The circuit component A1 includes a resin composite 2 and a wiring 3. The resin composite 2 contains a resin material 20 containing a plurality of magnetic particles 21. The plurality of magnetic particles 21 are dispersed throughout the resin material 20. This configuration allows a portion of the magnetic flux generated by the current flowing through the wiring 3 to be concentrated on the plurality of magnetic particles 21, thereby suppressing magnetic flux leakage. This improves the inductance value of the circuit component A1. Furthermore, because each of the plurality of magnetic particles 21 is smaller than a rod-shaped or annular magnetic core, the loop area of ​​eddy currents can be reduced. In other words, the use of the plurality of magnetic particles 21 reduces eddy current loss and suppresses iron loss. In particular, because this eddy current loss is proportional to the square of the frequency of the current flowing through the wiring 3, the higher the frequency of the current flowing through the wiring 3, the greater the effect of suppressing eddy current loss. Therefore, the circuit component A1 can achieve both an improved inductance value and suppressed iron loss. Furthermore, suppressing magnetic flux leakage prevents magnetic flux leakage from adversely affecting other devices.

[0046] In the circuit component A1, the plurality of magnetic particles 21 includes a plurality of first particles 22. The plurality of first particles 22 are insulating and are dispersed in the resin material 20 in the resin composite 2. If at least a portion of the wiring 3 (in this embodiment, the first wiring layer 31) is formed by electroless plating, and the magnetic particles 21 are conductive (i.e., do not include the first particles 22), plating will grow using the magnetic particles 21 that appear on the surface of the resin composite 2 as seeds. This makes it impossible to form selective wiring. On the other hand, in the circuit component A1, the first particles 22 dispersed in the resin material 20 in the resin composite 2 are insulating, and therefore plating will not grow on the first particles 22 even if the first particles 22 appear on the surface of the resin composite 2. In other words, the circuit component A1 enables selective formation of wiring 3.

[0047] In the circuit component A1, the plurality of magnetic particles 21 include a plurality of second particles 23. The plurality of second particles 23 are in contact with wiring 3 (e.g., first wiring layer 31). Each second particle 23 includes a second core portion 231, and at least a portion of the surface of the second particle 23 is the second core portion 231. The second core portion 231 is made of metal magnetic powder having the same composition as the metal magnetic powder of the first core portion 221. The second particles 23 are magnetic particles 21 irradiated with laser light, and are formed by partially or completely destroying an insulating coating film 232 covering the surface of the second core portion 231 by the laser light irradiation. Laser direct structuring (LDS) is an example of a method for forming wiring on the surface of a resin material. LDS is a technology in which a laser is used to generate metal nuclei on the surface of a resin material containing an LDS additive, and the metal nuclei are used as seeds to selectively form wiring only in the irradiated area with laser light by, for example, electroless plating. While LDS requires an LDS additive, in the circuit component A1, a metal core is formed by some of the magnetic particles 21 (second particles 23) instead of an LDS additive. That is, in the circuit component A1, a part of the wiring 3 (in this embodiment, the first wiring layer 31) can be formed by a process equivalent to LDS without adding an LDS additive. Furthermore, because a part of the wiring 3 can be formed by a process equivalent to LDS, it is possible to form a fine wiring pattern (each first wiring portion 311). That is, the circuit component A1 can be miniaturized.

[0048] In the circuit component A1, the insulating coating film 222 of each first particle 22 is made of an oxide of the first core portion 221. With this configuration, the insulating coating film 222 can be formed on the surface of the first core portion 221 by thermally oxidizing the first core portion 221. In other words, the insulating coating film 222 is formed by thermally oxidizing the metal magnetic powder that becomes the first core portion 221. Therefore, in the circuit component A1, the insulating magnetic particles 21, i.e., the first particles 22, can be easily formed.

[0049] In the circuit component A1, the wiring 3 is wound in a toroidal shape. With this configuration, the magnetic flux generated by the current flowing through each first wiring portion 311 of the first wiring layer 31 and the magnetic flux generated by the current flowing through each second wiring portion 321 of the second wiring layer 32 are oriented in the same direction in the region sandwiched between the first wiring layer 31 and the second wiring layer 32 in the z direction, and are oriented in opposite directions outside the first wiring layer 31 and the second wiring layer 32 (above the first wiring layer 31 and below the second wiring layer 32) in the z direction. In other words, the circuit component A1 can reduce magnetic flux leakage while improving the inductance value.

[0050] The semiconductor device B1 includes a circuit component A1 and a transistor Tr. As described above, the circuit component A1 suppresses magnetic flux leakage. Therefore, in the semiconductor device B1, it is possible to suppress adverse effects on the operation of the transistor Tr caused by magnetic flux leakage from the circuit component A1.

[0051] In the semiconductor device B1, for example, the transistor Tr and the circuit component A1 are covered with a sealing member 92. With this configuration, the transistor Tr and the circuit component A1 are integrated into a package. Therefore, by miniaturizing the circuit component A1, the semiconductor device B1 can be miniaturized.

[0052] In the first embodiment, the shapes of the plurality of first wiring portions 311 (first wiring layer 31) and the plurality of second wiring portions 321 (second wiring layer 32) are not limited to the examples described above. For example, they may be configured as shown in FIG. 12 . FIG. 12 is a plan view showing a circuit component according to this modification. In the modification shown in FIG. 12 , compared to the circuit component A1, each of the first wiring portions 311 and each of the second wiring portions 321 is inclined with respect to the radial direction of the wiring 3 in a plan view. This increases the area where each of the first wiring portions 311 and each of the second wiring portions 321 overlap in a plan view. This increases the area in which the plurality of vias 331 can be formed, allowing more vias 331 to be arranged. Therefore, in the example shown in FIG. 12 , electrical continuity between the first wiring layer 31 and the second wiring layer 32 via the plurality of vias 331 (conductive portions 33) is improved. 12, as can be seen from a comparison with FIG. 2, the inner vias 331a can be disposed further inward in the radial direction of the wiring 3, and therefore the first wiring portions 311 and the second wiring portions 321 can be extended further inward in the radial direction of the wiring 3. As a result, the cross-sectional area of ​​the magnetic path is enlarged, and the inductance value can be increased. In other words, the inductance value can be improved in the modified example shown in FIG. 12 compared to the circuit component A1.

[0053] In the first embodiment, a resin member may be formed on the resin complex 2 (on the side opposite to the side on which the support substrate 1 is disposed in the z direction). FIG. 13 is a cross-sectional view showing a circuit component according to this modification, corresponding to the cross section of FIG. 3. In the modification shown in FIG. 13, a resin member 5 is formed on the resin complex 2 so as to cover the first wiring layer 31. The resin member 5 may be made of the same material as the resin complex 2, or may be made of another resin material (a resin material in which magnetic particles 21 are not dispersed, or a resin material in which magnetic particles different from the magnetic particles 21 are dispersed). Furthermore, by using the resin member 5 instead of the support substrate 1, the resin member 5 may be formed on both the upper and lower surfaces of the resin complex 2. In particular, since it is not necessary to form wiring 3 on the resin member 5 formed on (or above and below) the resin complex 2, a resin material that does not contain an LDS additive (which may have oxide-based magnetic particles such as ferrite dispersed therein) can be used for the resin member 5.

[0054] In the first embodiment, the support substrate 1 may be made of the same material as the resin composite 2. That is, the support substrate 1 may not be an insulating substrate, but may be made of a resin material 20 in which a plurality of magnetic particles 21 are dispersed. FIG. 14 is a cross-sectional view showing a circuit component according to this modification, corresponding to the cross-section of FIG. 3. In the modification shown in FIG. 14, for example, a plurality of second particles 23 are revealed on the surface of the support substrate 1 by irradiating the support substrate 1 with laser light, and the second wiring layer 32 can be formed by electroless plating using the revealed plurality of second particles 23 as seeds. That is, in this modification, the second wiring layer 32 can be formed in the same manner as the first wiring layer 31.

[0055] In the first embodiment, the circuit component A1 may not include the support substrate 1. FIG. 15 is a cross-sectional view showing a circuit component according to this modification, corresponding to the cross-section of FIG. 3. In the modification shown in FIG. 15, for example, laser light is irradiated onto each surface of the resin complex 2 in the z direction to expose a plurality of second particles 23. Then, the first wiring layer 31 and the second wiring layer 32 can be formed by electroless plating using the exposed second particles 23 as seeds. Note that the formation of the plurality of vias 331 (conductive portions 33) may be performed before the formation of the first wiring layer 31 and the second wiring layer 32 (before the irradiation of laser light), or may be performed after the formation of the first wiring layer 31 and the second wiring layer 32. Alternatively, the formation of the plurality of vias 331 may be performed simultaneously with the formation of either the first wiring layer 31 or the second wiring layer 32.

[0056] In the first embodiment, when forming a portion of the wiring 3 (such as the first wiring layer 31) by irradiating laser light and electroless plating, in order to improve the accuracy of forming the portion of the wiring 3, in addition to the plurality of magnetic particles 21, the above-mentioned LDS additive may be additionally added to the resin material 20 in the resin composite 2.

[0057] A circuit component A2 according to the second embodiment will be described with reference to Figures 16 to 18. As shown in Figures 16 to 18, the circuit component A2 differs from the circuit component A1 in the configuration of the wiring 3.

[0058] Fig. 16 is a perspective view showing the circuit component A2. In Fig. 16, the resin composite 2 is indicated by an imaginary line (two-dot chain line). Fig. 17 is a plan view showing the circuit component A2. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII in Fig. 17.

[0059] 16 and 17, the wiring 3 in this embodiment is formed by winding a first wiring layer 31 and a second wiring layer 32 in a planar spiral shape. The number of turns of each of the first wiring layer 31 and the second wiring layer 32 is not particularly limited.

[0060] In the circuit component A2, a current input to one terminal portion 35 is input to the first wiring layer 31 via the connecting portion 34 connected to the terminal portion 35. The current input to the first wiring layer 31 flows through the first wiring layer 31 and is input to the second wiring layer 32 via the conductive portion 33. The current input to the second wiring layer 32 flows through the second wiring layer 32 and is output from the other terminal portion 35 via the connecting portion 34 connected to the second wiring layer 32.

[0061] Like the circuit component A1, the circuit component A2 also includes a resin composite 2 and wiring 3. Therefore, like the circuit component A1, part of the magnetic flux generated by the current flowing through the wiring 3 is concentrated on the multiple magnetic particles 21, improving the inductance value of the circuit component A2. Furthermore, the use of multiple magnetic particles 21 reduces eddy current loss and suppresses iron loss. Therefore, like the circuit component A1, the circuit component A2 can achieve both an improved inductance value and suppressed iron loss.

[0062] The circuit component A2 has a common configuration with the circuit component A1, and can achieve the same effects as the circuit component A1. Furthermore, the circuit component A2 can be used in place of the circuit component A1 in the semiconductor device B1.

[0063] The circuit component A2 can also be configured in the same manner as the above-described variations of the circuit component A1. For example, in the circuit component A2, a resin member 5 may be formed on the upper surface of the resin composite 2, the support substrate 1 may be made of the same material as the resin composite 2, or the support substrate 1 may be omitted.

[0064] In the first and second embodiments, an example in which an inductor is formed by the wiring 3 has been described, but the present invention is not limited to this, and a transformer or an LC filter may be formed by the wiring 3. In a transformer, two windings are formed by the wiring 3. The two windings are arranged so as to be magnetically coupled to each other. In an LC filter, an inductor portion and a capacitor portion are formed by the wiring 3.

[0065] The circuit components and semiconductor devices according to the present disclosure are not limited to the above-described embodiments. The specific configurations of the various parts of the circuit components and semiconductor devices according to the present disclosure can be freely modified in various ways. For example, the circuit components and semiconductor devices according to the present disclosure include the embodiments described in the following appendices. Appendix 1. a resin composite in which a plurality of magnetic particles are contained in a resin material; Wiring formed on the surface of the resin composite; It is equipped with The circuit component, wherein the plurality of magnetic particles are dispersed in the resin material. Appendix 2. 2. The circuit component of claim 1, wherein the plurality of magnetic particles includes insulating first particles. Appendix 3. 3. The circuit component according to claim 2, wherein the first particle includes a first core portion made of a metal magnetic powder and an insulating coating film covering the entire surface of the first core portion. Appendix 4. 4. The circuit component according to claim 3, wherein the insulating coating film is made of an oxide of the first core portion. Appendix 5. the plurality of magnetic particles further include second particles in contact with the wiring, the second particle includes a second core portion made of a metal magnetic powder having the same composition as the metal magnetic powder of the first core portion, 5. The circuit component according to claim 3, wherein at least a portion of the surface of the second particle is the second core portion. Appendix 6. 6. The circuit component according to claim 1, wherein a constituent material of the wiring includes Cu. Appendix 7. 7. The circuit component according to claim 1, wherein the plurality of magnetic particles contain any one of Fe, Ni, and Co elements. Appendix 8. 8. The circuit component according to claim 1, wherein the resin composite has a relative magnetic permeability of 10 or more. Appendix 9. 9. The circuit component according to claim 1, wherein the wiring forms an inductor. Appendix 10. 10. The circuit component according to claim 9, wherein the inductor has a self-inductance of 10 nH or more. Appendix 11. the wiring includes a first wiring layer, a second wiring layer, and a conductive portion; the first wiring layer and the second wiring layer face each other with the resin composite therebetween, 11. The circuit component according to claim 1, wherein the conductive portion connects the first wiring layer and the second wiring layer. Appendix 12. the first wiring layer is divided into a plurality of first wiring regions; the second wiring layer is divided into a plurality of second wiring regions, the conductive portion includes a plurality of vias that electrically connect each of the plurality of first wiring regions to each of the plurality of second wiring regions; A circuit component as described in Appendix 11, wherein each of the plurality of vias is formed in a portion where the plurality of first wiring regions and the plurality of second wiring regions overlap when viewed from a direction perpendicular to the first wiring layer and the second wiring layer. Appendix 13. A circuit component according to any one of Supplementary Note 1 to Supplementary Note 12; a transistor that is electrically connected to the circuit component. Appendix 14. Further provided is a sealing member made of resin, 14. The semiconductor device according to claim 13, wherein the sealing member covers the circuit components and the transistors. Appendix 15. 15. The semiconductor device according to claim 13, wherein the transistor is one of a MOSFET, an IGBT, and a HEMT. Appendix 16. 16. The semiconductor device according to claim 13, wherein a constituent material of the transistor includes any one of SiC, Si, and GaN. [Explanation of symbols]

[0066] A1,A2:Circuit parts 1:Support board 2: Resin composite 20: Resin material 21: Magnetic particle 22: First particle 221: First core portion 222: Insulating coating film 23: Second particle 231: Second core 232: Insulating coating film 3: Wiring 31: First wiring layer 311: First wiring part 32: Second wiring layer 321: Second wiring part 33: Conductive part 331: Via 331a: Inner via 331b: Outer via 34: Connection part 35: Terminal part 5: Resin member B1: Semiconductor device C: Capacitor Tr: Transistor 91: Circuit board 92: Sealing member 911: Electrode

Claims

1. a resin composite in which a plurality of magnetic particles are contained in a resin material; Wiring formed on the surface of the resin composite; It is equipped with the plurality of magnetic particles are dispersed in the resin material, the plurality of magnetic particles include insulating first particles and second particles in contact with the wiring, the first particle includes a first core portion made of a metal magnetic powder and an insulating coating film covering the entire surface of the first core portion, the second particle includes a second core portion made of a metal magnetic powder having the same composition as the metal magnetic powder of the first core portion, A circuit component, wherein at least a portion of the surface of the second particle is the second core portion.

2. 2. The circuit component according to claim 1, wherein the insulating coating film is made of an oxide of the first core portion.

3. 3. The circuit component according to claim 1, wherein the wiring is made of a material containing Cu.

4. 4. The circuit component according to claim 1, wherein the plurality of magnetic particles contain one of the elements Fe, Ni, and Co.

5. 5. The circuit component according to claim 1, wherein the resin composite has a relative magnetic permeability of 10 or more.

6. 6. The circuit component according to claim 1, wherein the wiring forms an inductor.

7. 7. The circuit component according to claim 6, wherein the inductor has a self-inductance of 10 nH or more.

8. the wiring includes a first wiring layer, a second wiring layer, and a conductive portion; the first wiring layer and the second wiring layer face each other with the resin composite therebetween, The circuit component according to claim 1 , wherein the conductive portion connects the first wiring layer and the second wiring layer.

9. the first wiring layer is divided into a plurality of first wiring regions, the second wiring layer is divided into a plurality of second wiring regions, the conductive portion includes a plurality of vias that electrically connect each of the plurality of first wiring regions to each of the plurality of second wiring regions; 9. The circuit component according to claim 8, wherein each of the plurality of vias is formed in a portion where the plurality of first wiring regions and the plurality of second wiring regions overlap when viewed from a direction perpendicular to the first wiring layer and the second wiring layer.

10. A circuit component according to any one of claims 1 to 9; a transistor that is electrically connected to the circuit component.

11. Further provided is a sealing member made of resin, The semiconductor device according to claim 10 , wherein the sealing member covers the circuit components and the transistors.

12. 12. The semiconductor device according to claim 10, wherein the transistor is one of a MOSFET, an IGBT, and a HEMT.

13. 13. The semiconductor device according to claim 10, wherein a constituent material of the transistor includes any one of SiC, Si, and GaN.

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