Hardmask composition, hardmask layer and patterning method

Abstract

To provide a hard mask composition capable of forming a hard mask layer that secures excellent etching resistance, gap-fill properties, and heat resistance, a hard mask layer comprising a cured product of the hard mask composition, and a pattern formation method using the hard mask composition.SOLUTION: A hardmask composition includes: a polymer including a structural unit represented by the following formula 1; and a solvent. (The definition of the formula 1 is the same as described in this specification).SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a hard mask composition, a hard mask layer including a cured product of the hard mask composition, and a pattern forming method using the hard mask composition. [Background technology]

[0002] In recent years, the semiconductor industry has evolved from patterns on the scale of hundreds of nanometers to ultrafine technology with patterns on the scale of a few to tens of nanometers. To realize such ultrafine technology, effective lithographic techniques are essential.

[0003] A typical lithographic technique involves forming a material layer on a semiconductor substrate, coating a photoresist layer thereon, exposing and developing the material to form a photoresist pattern, and then etching the material layer using the photoresist pattern as a mask.

[0004] In recent years, as the size of patterns to be formed has decreased, it has become difficult to form fine patterns with good profiles using only the typical lithographic techniques described above. Therefore, fine patterns can be formed by forming an auxiliary layer, called a hard mask layer, between the material layer to be etched and the photoresist layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Korean Patent Publication No. 10-2021-0113909 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a hard mask composition capable of forming a hard mask layer that can ensure excellent etching resistance, gap fill properties, and heat resistance.

[0007] Another object of the present invention is to provide a hard mask layer comprising a cured product of the hard mask composition.

[0008] It is still another object of the present invention to provide a pattern forming method using the above hard mask composition.

[0009] The hard mask composition according to the present invention includes a polymer having a structural unit represented by the following Chemical Formula 1, and a solvent:

[0010] [ka]

[0011] In the above chemical formula 1, A is a group consisting of a substituted or unsubstituted aromatic hydrocarbon ring and a substituted or unsubstituted aromatic heterocycle, or two or more substituted or unsubstituted aromatic hydrocarbon rings, two or more substituted or unsubstituted aromatic heterocycles, or a substituted or unsubstituted aromatic hydrocarbon ring and a substituted or unsubstituted aromatic heterocycle, each of which is joined by a single bond or -CR x R y -(where R x and R y are each independently a substituted or unsubstituted aromatic hydrocarbon ring or a substituted or unsubstituted aromatic heterocycle, x and R y may be fused to each other to form a fused ring; B is a group represented by the following chemical formula 2: * is the connection point:

[0012] [ka]

[0013] In the above chemical formula 2, X 1 and X 2 are each independently a substituted or unsubstituted saturated or unsaturated aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated alicyclic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated heteroaliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated aliphatic heterocyclic group having 2 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or a combination thereof, wherein the X 1 and X 2 may be bonded to each other to form a ring, R 1 ~R 4 are each independently a deuterium atom, a hydroxyl group, a halogen atom, or -NR a R b (where R a and R b are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted cycloalkenyl group having 3 to 20 carbon atoms, a substituted or unsubstituted cycloalkynyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic heterocyclic group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 20 carbon atoms, or a combination thereof; m1 to m4 each independently represent an integer of 0, 1, 2, 3, or 4; n1 and n2 are each independently one of the integers 1, 2, 3, and 4.

[0014] A in the above chemical formula 1 is a group consisting of a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 20 carbon atoms, or two or more substituted or unsubstituted aromatic hydrocarbon rings having 6 to 20 carbon atoms are joined by a single bond or -CR x R y -(where R x and R y are each independently a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 10 carbon atoms, and x and R y may be fused to each other to form a fused ring.

[0015] The above A may be a substituted or unsubstituted group consisting of at least one of structures selected from the following Group 1 and Group 2.

[0016] [ka]

[0017] [ka]

[0018] In the above group 2, Z is -NR c -(where R c is a hydrogen atom, a deuterium atom, or an alkyl group having 1 to 5 carbon atoms.), -O-, -S-, or -PR d - (where R d is a hydrogen atom, a deuterium atom, or an alkyl group having 1 to 5 carbon atoms.

[0019] X in the above chemical formula 2 1 and X 2 are each independently a substituted or unsubstituted saturated or unsaturated aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated alicyclic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, or a combination thereof, wherein the X1 and X 2 may be bonded to each other to form a ring.

[0020] X in the above chemical formula 2 1 and X 2 may each independently be a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, or a combination thereof, in which case, the above X 1 and X 2 may be bonded to each other to form a ring.

[0021] R in the above chemical formula 2 1 ~R 4 may each independently represent a deuterium atom, a hydroxy group, a halogen atom, a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, or a combination thereof, and m1 to m4 may each independently represent one of the integers 0, 1, and 2.

[0022] X in the above chemical formula 2 1 and X 2 may each independently be a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, or a combination thereof, and in this case, the X 1 and X 2 may be bonded to each other to form a ring, m1 to m4 may each independently be 0, and n1 and n2 may each independently be 1 or 2.

[0023] The group represented by the above chemical formula 2 may be at least one of groups represented by the following chemical formulas 2-1 to 2-5:

[0024] [ka]

[0025] In the above chemical formulas 2-1 to 2-5, * indicates a linking point.

[0026] The above-mentioned Chemical Formula 1 may be at least one of structural units represented by any one of the following Chemical Formulas 1-1 to 1-7:

[0027] [ka]

[0028] In the above chemical formulas 1-1 to 1-7, * indicates a linking point.

[0029] The weight average molecular weight of the polymer may be 1,000 g / mol to 200,000 g / mol.

[0030] The polymer may be contained in an amount of 0.1% by mass to 30% by mass relative to 100% by mass of the total mass of the hard mask composition.

[0031] The solvent may be propylene glycol, propylene glycol diacetate, methoxypropanediol, diethylene glycol, diethylene glycol butyl ether, tri(ethylene glycol) monomethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, γ-butyrolactone, N,N-dimethylformamide, N,N-dimethylacetamide, methylpyrrolidone, methylpyrrolidinone, acetylacetone, or ethyl 3-ethoxypropionate, or a combination thereof.

[0032] According to yet another aspect, there is provided a hard mask layer comprising a cured product of the hard mask composition described above.

[0033] According to yet another aspect, there is provided a patterning method including the steps of: forming a material layer on a substrate; applying the above-described hard mask composition on the material layer; heat-treating the hard mask composition to form a hard mask layer; forming a photoresist layer on the hard mask layer; exposing and developing the photoresist layer to form a photoresist pattern; selectively removing the hard mask layer using the photoresist pattern to expose a portion of the material layer; and etching the exposed portion of the material layer.

[0034] The step of forming the hard mask layer may include a step of performing a heat treatment at 100°C to 1,000°C.

[0035] According to the present invention, there is provided a hard mask composition that has excellent solubility in a solvent, ensures excellent heat resistance, and at the same time, ensures excellent gap filling properties and planarization properties, and can be effectively applied to a hard mask layer. [Brief explanation of the drawings]

[0036] [Figure 1] FIG. 1 is a reference schematic diagram exemplarily showing a step of a hard mask layer to explain a method for evaluating planarization characteristics. DETAILED DESCRIPTION OF THE INVENTION

[0037] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to exemplary embodiments thereof so that those skilled in the art can easily practice the present invention. However, the present invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein.

[0038] In this specification, unless otherwise defined, the term "substituted" means that a hydrogen atom in a compound is replaced with a deuterium atom, a halogen atom (F, Br, Cl, or I), a hydroxy group, an alkoxy group, a nitro group, a cyano group, an amino group, an azide group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamoyl group, a thiol group, an ester group, a carboxyl group and salts thereof, a sulfonic acid group and salts thereof, a phosphoric acid group and salts thereof, a vinyl group, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, It means an aromatic hydrocarbon group (aryl group) having 6 to 30 carbon atoms, an arylalkyl group having 7 to 30 carbon atoms, an arylaryl group having 9 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a heteroalkyl group having 1 to 20 carbon atoms, a heteroarylalkyl group having 3 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, a cycloalkenyl group having 3 to 15 carbon atoms, a cycloalkynyl group having 6 to 15 carbon atoms, a heterocycloalkyl group having 3 to 30 carbon atoms, and a group substituted with a substituent selected from combinations thereof.

[0039] Furthermore, the above-mentioned substituents, i.e., a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamoyl group, a thiol group, an ester group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkynyl group having 2 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 30 carbon atoms, an arylalkyl group having 7 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a heteroalkyl group having 1 to 20 carbon atoms, a heteroarylalkyl group having 3 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, a cycloalkenyl group having 3 to 15 carbon atoms, a cycloalkynyl group having 6 to 15 carbon atoms, or a heterocyclic group having 2 to 30 carbon atoms, can be bonded to or condensed with adjacent substituents to form a ring.

[0040] In this specification, unless otherwise defined, the term "aromatic hydrocarbon ring" refers to a group having one or more aromatic hydrocarbon moieties (excluding aromatic heterocycles), and includes not only non-fused aromatic hydrocarbon rings and fused aromatic hydrocarbon rings, but also forms in which aromatic hydrocarbon moieties are linked by a single bond, forms of fused rings containing a non-aromatic moiety to which an aromatic hydrocarbon moiety is directly or indirectly fused, and combinations thereof.

[0041] More specifically, the substituted or unsubstituted aromatic hydrocarbon ring may be, but is not limited to, a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthryl group, a substituted or unsubstituted naphthacenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted terphenyl group, a substituted or unsubstituted quaterphenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted phenylenyl group, a substituted or unsubstituted indenyl group, or a combination thereof.

[0042] In this specification, unless otherwise defined, "hetero" means containing one or more heteroatoms selected from N, O, S, Se and P. In this specification, unless otherwise defined, the term "heteroaliphatic hydrocarbon group" refers to a linear or branched aliphatic hydrocarbon group in which at least one carbon atom constituting the hydrocarbon group is substituted with a heteroatom selected from N, O, S, Se, and P.

[0043] In this specification, unless otherwise defined, the term "aromatic heterocycle" means containing at least one heteroatom selected from N, O, S, Se and P in the aromatic ring.

[0044] More specifically, the substituted or unsubstituted aromatic heterocycle is a substituted or unsubstituted furanyl group, a substituted or unsubstituted thiophenyl group, a substituted or unsubstituted pyrrolyl group, a substituted or unsubstituted pyrazolyl group, a substituted or unsubstituted imidazolyl group, a substituted or unsubstituted triazolyl group, a substituted or unsubstituted oxazolyl group, a substituted or unsubstituted thiazolyl group, a substituted or unsubstituted oxadiazolyl group, a substituted or unsubstituted thiadiazolyl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted triazinyl group, a substituted or unsubstituted benzofuranyl group, a substituted or unsubstituted benzothiophenyl group, a substituted or unsubstituted benzimidazolyl group, a substituted or unsubstituted indolyl group, a substituted or unsubstituted quinolinyl group, or a substituted or unsubstituted isoquinolinyl group. , a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted quinoxalinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted benzoxazinyl group, a substituted or unsubstituted benzthiazinyl group, a substituted or unsubstituted acridinyl group, a substituted or unsubstituted phenazinyl group, a substituted or unsubstituted phenothiazinyl group, a substituted or unsubstituted phenoxazinyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted carbazolyl group, a pyridoindolyl group, a benzopyridoxazinyl group, a benzopyridothiazinyl group, a 9,9-dimethyl-9,10-dihydroacridinyl group, or a combination thereof, but is not limited to these, and in the case of a combination thereof, the substituents may be bonded to or fused with each other to form a ring.

[0045] In this specification, unless otherwise stated, "combination" means blending or copolymerization.

[0046] In addition, in this specification, the term "polymer" can include both oligomers and polymers.

[0047] Unless otherwise specified, in this specification, the "weight average molecular weight" is measured by dissolving a sample in tetrahydrofuran (THF) and then using Agilent Technologies' 1200 series gel permeation chromatography (GPC) (using a Shodex LF-804 column and Shodex polystyrene as the standard sample).

[0048] As used herein, "structural unit" may refer to a repeating unit of a polymer or copolymer.

[0049] The semiconductor industry is constantly demanding smaller chip sizes. To meet this demand, lithography technology requires that the resist linewidth be on the order of tens of nanometers. However, as the resist linewidth decreases, the resist thickness must be limited to maintain the resist pattern, which can result in the resist not being resistant to the etching step. To address this issue, an auxiliary layer known as a hardmask layer is used between the material layer to be etched and the photoresist layer. This hardmask layer acts as an intermediate film that transfers the fine pattern of the photoresist to the material layer through selective etching. Therefore, the hardmask layer must have etching resistance and crosslinking properties to withstand the etching process required for pattern transfer.

[0050] Existing hard mask layers have been formed by chemical or physical vapor deposition, but these methods have problems such as large equipment scale, high process costs, and low economic efficiency. To address these problems, a spin-coating method has recently been developed as a hard mask layer formation technique. The spin-coating method is easier to process than conventional methods, and hard mask layers manufactured using this method tend to have better gap-fill and planarization properties. However, hard mask layers formed using this method may have reduced etch resistance. Therefore, a hard mask composition that can be applied to a spin-coating method and that is cured using this method is required to have etch resistance equivalent to that of hard mask layers formed using a chemical or physical vapor deposition method.

[0051] In response to this demand, research has been conducted to improve the etching resistance of the hard mask layer by increasing the carbon content of the hard mask composition. However, an increase in the carbon content of the polymer contained in the hard mask composition may result in a decrease in solubility in a solvent. Therefore, it is necessary to increase the carbon content of the polymer contained in the hard mask composition to improve the etching resistance of the formed hard mask layer, while at the same time ensuring that the polymer has high solubility in a solvent.

[0052] The hard mask composition according to the present invention includes a polymer containing an aromatic hydrocarbon ring or an aromatic heterocycle, which increases the carbon content in the polymer and ensures the etching resistance of the formed hard mask layer. At the same time, the polymer contains a highly flexible chemical structure, which increases the solubility of the polymer in solvents. As a result, the hard mask layer formed from the composition can have excellent gap-filling properties, planarization properties, and heat resistance.

[0053] Specifically, the hard mask composition according to the present invention includes a polymer including a structural unit represented by the following Chemical Formula 1, and a solvent:

[0054] [ka]

[0055] In the above chemical formula 1, A is a group consisting of a substituted or unsubstituted aromatic hydrocarbon ring and a substituted or unsubstituted aromatic heterocycle, or two or more substituted or unsubstituted aromatic hydrocarbon rings, two or more substituted or unsubstituted aromatic heterocycles, or a substituted or unsubstituted aromatic hydrocarbon ring and a substituted or unsubstituted aromatic heterocycle, each of which is joined by a single bond or -CR x R y -(where R x and R y are each independently a substituted or unsubstituted aromatic hydrocarbon ring or a substituted or unsubstituted aromatic heterocycle, x and R y may be fused to each other to form a fused ring; B is a group represented by the following chemical formula 2: * is the connection point:

[0056] [ka]

[0057] In the above chemical formula 2, X 1 and X 2 are each independently a substituted or unsubstituted saturated or unsaturated aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated alicyclic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated heteroaliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated aliphatic heterocyclic group having 2 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or a combination thereof; 1 and X2 may be bonded to each other to form a ring, R 1 ~R 4 are each independently a deuterium atom, a hydroxyl group, a halogen atom, or -NR a R b (where R a and R b are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted cycloalkenyl group having 3 to 20 carbon atoms, a substituted or unsubstituted cycloalkynyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic heterocyclic group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 20 carbon atoms, or a combination thereof; m1 to m4 each independently represent an integer of 0, 1, 2, 3, or 4; n1 and n2 are each independently one of the integers 1, 2, 3, and 4.

[0058] As described above, the composition according to the present invention includes a polymer having a structural unit containing a substituted or unsubstituted aromatic hydrocarbon ring, a substituted or unsubstituted aromatic heterocycle, or a group formed by linking these rings, thereby increasing the carbon content in the polymer and ensuring etching resistance. At the same time, the inclusion of the moiety represented by Chemical Formula 2 increases the flexibility of the polymer's chemical structure. The flexible chemical structure not only increases the free volume of the polymer, improving the solubility of the polymer in solvents, but also lowers the glass transition temperature (Tg) of the composition. This increases the reflow rate during firing of the composition, thereby improving the gap-filling and planarization properties of the resulting hard mask layer.

[0059] In one embodiment of the present invention, A in the above chemical formula 1 is a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 20 carbon atoms, or two or more substituted or unsubstituted aromatic rings having 6 to 20 carbon atoms are each a single bond, or -CR x R y -(where R x and R y are each independently a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 10 carbon atoms, and x and R y can be fused with each other to form a fused ring.) For example, A is a group consisting of at least one of the structures selected from the following substituted or unsubstituted Group 1 and Group 2, including, but not limited to, a group consisting of at least one of the structures selected from the following substituted or unsubstituted Group 1.

[0060] [ka]

[0061] In Group 2 above, Z is -NR c -(where R cis a hydrogen atom, a deuterium atom, or an alkyl group having 1 to 5 carbon atoms.), -O-, -S-, or -PR d -(where R d is a hydrogen atom, a deuterium atom, or an alkyl group having 1 to 5 carbon atoms.

[0062] Examples of A include, but are not limited to, substituted or unsubstituted groups consisting of at least one ring derived from benzene, naphthalene, anthracene, phenanthrene, pyrene, a fluorene derivative, indole, carbazole, or benzocarbazole.

[0063] In one embodiment, X in Formula 2 above 1 and X 2 may each independently be a substituted or unsubstituted saturated or unsaturated aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated alicyclic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, or a combination thereof, and the above X 1 and X 2 may be bonded to each other to form a ring. For example, X 1 and X 2 may each independently be a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, or a combination thereof, but is not limited to these. 1 and X 2 may be bonded to each other to form a ring.

[0064] Above X 1 and X 2 When X are bonded to each other to form a ring, the ring formed may include rings derived from cycloalkanes, cycloalkenes, and cycloalkynes, as well as aromatic hydrocarbon rings, and the ring may be a single ring or may be formed by bonding two or more hydrocarbon rings. For example, X1 and X 2 are alkyl groups, and these can be linked to form structures such as cyclopentane and cyclohexane. For example, X 1 and X 2 is an aromatic hydrocarbon group, e.g., X 1 and X 2 When both of X and X are phenyl groups, 1 and X 2 Alternatively, carbon atoms at the ortho positions relative to the quaternary carbon to which the hydrocarbon ring group is bonded may be bonded together via a single bond to form a fluorene ring.

[0065] As mentioned above, X 1 and X 2 may each independently be present, or X 1 and X 2 may be bonded to each other and exist as one part. 1 and X 2 By appropriately adjusting the structure of the group represented by Chemical Formula 2 to adjust the flexibility of the structure, the solubility of the polymer containing this structure in a solvent can be adjusted.

[0066] In one embodiment, R in Formula 2 above 1 ~R 4 are each independently a deuterium atom, a hydroxy group, a halogen atom, a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, or a combination thereof, such as a hydroxy group, a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a combination thereof, such as, but not limited to, a hydroxy group.

[0067] In one embodiment, m1 to m4 in the above chemical formula 2 are each independently one of the integers 0, 1, 2, 3, and 4, for example, one of the integers 0, 1, and 2, for example, 0 or 1, for example, but not limited to, 0.

[0068] In one embodiment, n1 and n2 in the above Chemical Formula 2 are each independently an integer of 1, 2, 3, or 4, for example, one of the integers 1, 2, and 3, for example, but not limited to, 1 or 2. By adjusting n1 and n2, the flexibility of the structure in the structural unit can be adjusted, and the solubility of the polymer containing it in a solvent can be adjusted.

[0069] In one embodiment, the group represented by Chemical Formula 2 above may be at least one of groups represented by Chemical Formulas 2-1 to 2-5 below:

[0070] [ka]

[0071] In the above chemical formulas 2-1 to 2-5, * indicates a linking point.

[0072] In one embodiment, the structural unit represented by Chemical Formula 1 may be at least one of structural units represented by the following Chemical Formulas 1-1 to 1-7:

[0073] [ka]

[0074] In the above chemical formulas 1-1 to 1-7, * indicates a linking point.

[0075] The polymer may have a weight-average molecular weight of 1,000 g / mol to 200,000 g / mol. For example, the polymer may have a weight-average molecular weight of 1,000 g / mol to 150,000 g / mol, such as 1,000 g / mol to 100,000 g / mol, such as 1,200 g / mol to 50,000 g / mol, or 1,200 g / mol to 10,000 g / mol, but is not limited thereto. By having the polymer have a weight-average molecular weight within the above range, the carbon content and solubility in a solvent of the hard mask composition containing the polymer can be adjusted and optimized.

[0076] The polymer can be synthesized by appropriately referring to a conventionally known synthesis method. More specifically, a person skilled in the art can easily synthesize the polymer by referring to the synthesis methods described in the Examples.

[0077] The polymer may be contained in an amount of 0.1% by mass to 30% by mass, based on the total mass of the hard mask composition (100% by mass). For example, the amount may be 0.2% by mass to 30% by mass, such as 0.5% by mass to 30% by mass, such as 1% by mass to 30% by mass, such as 1.5% by mass to 25% by mass, or such as 2% by mass to 20% by mass, but is not limited thereto. By containing the polymer in the above range, the thickness, surface roughness, and level of planarization characteristics of the hard mask can be easily adjusted.

[0078] The hard mask composition according to the present invention includes a solvent. Examples of the solvent include at least one solvent selected from the group consisting of propylene glycol, propylene glycol diacetate, methoxypropanediol, diethylene glycol, diethylene glycol butyl ether, tri(ethylene glycol) monomethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, γ-butyrolactone, N,N-dimethylformamide, N,N-dimethylacetamide, methylpyrrolidone, methylpyrrolidinone, acetylacetone, and ethyl 3-ethoxypropionate or a salt thereof. The solvent is not particularly limited as long as it has sufficient solubility and / or dispersibility in the polymer.

[0079] The hard mask composition may further include additives such as a surfactant, a crosslinking agent, a thermal acid generator, and a plasticizer.

[0080] Examples of the surfactant that can be used include, but are not limited to, fluoroalkyl compounds, alkylbenzenesulfonates, alkylpyridinium salts, polyethylene glycols, and quaternary ammonium salts.

[0081] Examples of the crosslinking agent include melamine-based agents, substituted iodine-based agents, and polymers thereof. Preferably, the crosslinking agent has at least two crosslink-forming substituents, and compounds such as methoxymethylated glycolyl, butoxymethylated glycolyl, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxymethylated benzoguanamine, methoxymethylated iodine, butoxymethylated iodine, methoxymethylated thioiodine, and butoxymethylated thioiodine can be used.

[0082] Furthermore, as the crosslinking agent, a crosslinking agent having high heat resistance can be used. As the crosslinking agent having high heat resistance, a compound containing a crosslink-forming substituent having an aromatic ring (e.g., a benzene ring or a naphthalene ring) in the molecule can be used.

[0083] Examples of the thermal acid generator that can be used include, but are not limited to, acidic compounds such as p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium p-toluenesulfonate, salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, hydroxybenzoic acid, and naphthalenecarboxylic acid, and / or 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, and other organic sulfonic acid alkyl esters.

[0084] According to another embodiment, a hard mask layer including the cured hard mask composition described above is provided.

[0085] A method for forming a pattern using the above-described hard mask composition will now be described.

[0086] A patterning method according to one embodiment of the present invention includes the steps of providing a material layer on a substrate, applying a hard mask composition containing the above-described polymer and a solvent onto the material layer, heat-treating the hard mask composition to form a hard mask layer, forming a photoresist layer on the hard mask layer, exposing and developing the photoresist layer to form a photoresist pattern, selectively removing the hard mask layer using the photoresist pattern to expose portions of the material layer, and etching the exposed portions of the material layer.

[0087] The substrate may be, for example, a silicon wafer, a glass substrate, or a polymer substrate. The material layer is a material to be finally patterned, and may be, for example, a metal layer such as aluminum or copper, a semiconductor layer such as silicon, or an insulating layer such as silicon oxide or silicon nitride. The material layer may be formed, for example, by a chemical vapor deposition method.

[0088] The hard mask composition may be prepared in the form of a solution and applied by a spin-coating method, as described above. The thickness of the applied hard mask composition is not particularly limited, but may be, for example, 50 to 200,000 Å.

[0089] The step of heat-treating the hard mask composition may be performed, for example, at a temperature of 100° C. to 1,000° C. for 10 seconds to 1 hour. For example, the step of heat-treating the hard mask composition may include multiple heat-treatment steps, for example, a first heat-treatment step and a second heat-treatment step.

[0090] In one embodiment, the step of heat-treating the hard mask composition may include a single heat-treatment step performed at, for example, 100°C to 1000°C for 10 seconds to 1 hour. For example, the heat-treatment step may be performed in an air or nitrogen atmosphere, or in an atmosphere having an oxygen concentration of 1% by weight or less.

[0091] In one embodiment, the step of heat-treating the hard mask composition includes a first heat-treatment step performed at a temperature of, for example, 100°C to 1,000°C, for example, 100°C to 800°C, for example, 100°C to 500°C, for example, 150°C to 400°C, for example, 30 seconds to 1 hour, for example, 30 seconds to 30 minutes, for example, 30 seconds to 10 minutes, for example, 30 seconds to 5 minutes.

[0092] The method may also include a second heat treatment step performed consecutively at a temperature of, for example, 100°C to 1,000°C, for example, 300°C to 1,000°C, for example, 500°C to 1,000°C, for example, 500°C to 600°C, for example, 30 seconds to 1 hour, for example, 30 seconds to 30 minutes, for example, 30 seconds to 10 minutes, for example, 30 seconds to 5 minutes. For example, the first and second heat treatment steps may be performed in an air or nitrogen atmosphere, or in an atmosphere with an oxygen concentration of 1% by mass or less.

[0093] At least one of the heat treatment steps of the hard mask composition is performed at a high temperature of 200°C or higher, thereby exhibiting high etching resistance that can withstand etching gases and chemical solutions to which the hard mask composition is exposed in subsequent processes, including an etching process.

[0094] In one embodiment, forming the hard mask layer may include a UV / Vis curing step and / or a near-infrared (near IR) curing step.

[0095] In one embodiment, the step of forming the hard mask layer may include at least one of the first heat treatment step, the second heat treatment step, the UV / Vis curing step, and the near-infrared (near IR) curing step, or may include two or more of these steps consecutively.

[0096] In one embodiment, the method may further include forming a silicon-containing thin film layer on the hard mask layer, the silicon-containing thin film layer being formed of a material such as SiCN, SiOC, SiON, SiOCN, SiC, SiO, and / or SiN.

[0097] In one embodiment, before forming the photoresist layer, a bottom anti-reflective coating (BARC) may be further formed on the silicon-containing thin film layer or the hard mask layer.

[0098] In one embodiment, the step of exposing the photoresist layer can be performed using, for example, ArF, KrF, or EUV, etc. After the exposure, a heat treatment process can be performed at 100°C to 700°C.

[0099] In one embodiment, the step of etching the exposed portions of the material layer can be performed by dry etching using an etching gas, such as N2 / O2, CHF3, CF4, Cl2, BCl3, and mixtures thereof.

[0100] The etched material layer can be formed in a variety of patterns, including metal patterns, semiconductor patterns, and insulating patterns, and can be applied to various patterns within a semiconductor integrated circuit device, for example. [Example]

[0101] The above-mentioned embodiments of the present invention will be described in more detail with reference to the following examples, which are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0102] [Compound synthesis] Synthesis Example 1 A flask was charged with 1,1-bis(4-hydroxyphenyl)cyclohexane (80.5 g, 0.3 mol), 4-fluorobenzaldehyde (74.5 g, 0.6 mol), potassium carbonate (82.9 g, 0.6 mol), and 400 mL of anhydrous N,N-dimethylformamide (DMF), and the mixture was stirred at 140 °C for 14 hours under a nitrogen atmosphere. After completion of the reaction, the reaction solution was cooled to room temperature and then slowly added dropwise to cooled water (1,000 mL). The resulting solid was collected by filtration and washed twice with water (500 mL) and with aqueous methanol (water:methanol (MeOH) = 5:1,200 mL). The remaining solvent was removed under reduced pressure to obtain compound 1a, represented by the following chemical formula 1a.

[0103] [ka]

[0104] Compound 1a (95.3 g, 0.2 mol) was dissolved in dichloromethane:MeOH (1:1, 500 mL), and then sodium borohydride (22.7 g, 0.6 mol) was slowly added thereto at room temperature over 20 minutes, followed by stirring at room temperature for 5 hours.

[0105] After the reaction was completed, about half of the solvent was removed under reduced pressure, and the organic layer was extracted with ethyl acetate (600 mL). The remaining solvent was then removed under reduced pressure to obtain compound 1b represented by the following chemical formula 1b.

[0106] [ka]

[0107] Compound 1b (48.0 g, 0.1 mol) was dissolved in dehydrated DMF (150 mL), and sodium hydride (7.2 g, 0.3 mol) was slowly added while blowing nitrogen. The mixture was then stirred at room temperature for 30 minutes. Iodomethane (71.0 g, 0.5 mol) was slowly added dropwise to the reaction mixture, and the mixture was further stirred at room temperature for 3 hours.

[0108] After the reaction was completed, the organic layer was extracted with ethyl acetate (500 mL), and the remaining solvent was removed under reduced pressure. The residue was then purified by column chromatography to obtain Compound 1 represented by the following chemical formula A.

[0109] [ka]

[0110] Synthesis Example 2 Compound 2 represented by the following chemical formula B was obtained in the same manner as in Synthesis Example 1, except that 3-fluorobenzaldehyde (0.6 mol) was used instead of 4-fluorobenzaldehyde.

[0111] [ka]

[0112] Synthesis Example 3 Compound 3 represented by the following chemical formula C was obtained in the same manner as in Synthesis Example 1, except that 1,1-bis(4-hydroxyphenyl)cyclopentane (0.3 mol) was used instead of 1,1-bis(4-hydroxyphenyl)cyclohexane.

[0113] [ka]

[0114] Synthesis Example 4 Compound 1a (95.3 g, 0.2 mol), 3-chloroperbenzoic acid (mCPBA) (86.3 g, 0.5 mol), and chloroform (200 mL) were placed in a flask and stirred at room temperature for 4 hours. After the reaction was completed, the solvent was removed under reduced pressure, and the resulting solid was filtered off. The filtrate was purified by column chromatography to obtain compound 4a, which is represented by the following chemical formula 4a.

[0115] [ka]

[0116] Compound 4 represented by the following chemical formula D was obtained in the same manner as in Synthesis Example 1, except that compound 4a (0.3 mol) was used instead of 1,1-bis(4-hydroxyphenyl)cyclohexane.

[0117] [ka]

[0118] Synthesis Example 5 Compound 5 represented by the following chemical formula E was obtained in the same manner as in Synthesis Example 1, except that bisphenol A (0.3 mol) was used instead of 1,1-bis(4-hydroxyphenyl)cyclohexane.

[0119] [ka]

[0120] Synthesis Example 6 Compound 6 represented by the following chemical formula F was obtained in the same manner as in Synthesis Example 1, except that 9,9-bis(4-hydroxyphenyl)fluorene (0.3 mol) was used instead of 1,1-bis(4-hydroxyphenyl)cyclohexane.

[0121] [ka]

[0122] [Polymer synthesis] Polymerization Example 1 9,9-bis(6-hydroxy-2-naphthyl)fluorene (22.5 g, 0.05 mol), compound 1 (25.4 g, 0.05 mol), diethyl sulfate (0.15 g), and propylene glycol monomethyl ether acetate (PGMEA, 150 g) were added to a flask in this order and polymerized at 90°C for 6 hours with stirring. After the reaction was complete, the reactants were added to 40 g of distilled water and 200 g of methanol, vigorously stirred, and then allowed to stand. The supernatant was then removed, and the precipitate was dissolved in 80 g of propylene glycol monomethyl ether acetate. 200 g of methanol was added, vigorously stirred, and then allowed to stand. The purification process was repeated two more times, and the purified polymer was dissolved in 80 g of propylene glycol monomethyl ether acetate (PGMEA). The residual solvent was removed under reduced pressure to obtain polymer 1 (weight average molecular weight = 3,000 g / mol) consisting of the structural unit represented by formula 1-1 below.

[0123] [ka]

[0124] Polymerization Example 2 Polymer 2 (weight average molecular weight = 3,000 g / mol) consisting of a structural unit represented by the following chemical formula 1-2 was obtained in the same manner as in Polymerization Example 1, except that 0.05 mol of 1-hydroxypyrene was used instead of 9,9-bis(6-hydroxy-2-naphthyl)fluorene.

[0125] [ka]

[0126] Polymerization Example 3 Polymer 3 (weight average molecular weight = 3,000 g / mol) consisting of structural units represented by the following chemical formula 1-3 was obtained in the same manner as in Polymerization Example 1, except that compound 2 was used instead of compound 1.

[0127] [ka]

[0128] Polymerization Example 4 Polymer 4 (weight average molecular weight = 3,000 g / mol) consisting of structural units represented by the following chemical formula 1-4 was obtained in the same manner as in Polymerization Example 1, except that compound 3 was used instead of compound 1.

[0129] [ka]

[0130] Polymerization Example 5 Polymer 5 (weight average molecular weight = 3,000 g / mol) consisting of structural units represented by the following chemical formula 1-5 was obtained in the same manner as in Polymerization Example 1, except that compound 4 was used instead of compound 1.

[0131] [ka]

[0132] Polymerization Example 6 Polymer 6 (weight average molecular weight = 3,000 g / mol) consisting of structural units represented by the following chemical formula 1-6 was obtained in the same manner as in Polymerization Example 1, except that compound 5 was used instead of compound 1.

[0133] [ka]

[0134] Polymerization Example 7 Polymer 7 (weight average molecular weight = 3,000 g / mol) consisting of structural units represented by the following chemical formula 1-7 was obtained in the same manner as in Polymerization Example 1, except that compound 6 was used instead of compound 1.

[0135] [ka]

[0136] Comparative Polymerization Example 1 28.83 g (0.2 mol) of 1-naphthol, 41.4 g (0.15 mol) of benzoperylene, and 12.08 g (0.4 mol) of paraformaldehyde were placed in a three-neck flask. 0.57 g (0.003 mol) of p-toluenesulfonic acid monohydrate was dissolved in 163 g of propylene glycol monomethyl ether acetate (PGMEA) and the mixture was stirred at 60°C for 18 hours to polymerize. After the reaction was complete, the reaction solution was added to 40 g of distilled water and 400 g of methanol, vigorously stirred, and then allowed to stand. The supernatant was then removed, and the precipitate was dissolved in 80 g of propylene glycol monomethyl ether acetate. 320 g of methanol was added, vigorously stirred, and allowed to stand. The purification process was repeated two more times, and the purified polymer was dissolved in 80 g of propylene glycol monomethyl ether acetate (PGMEA), and the remaining methanol and distilled water were removed under reduced pressure. 1 L of tetrahydrofuran was added to the resulting concentrated solution, and the solution was slowly added dropwise to a beaker containing 1 L of stirred hexane to form a precipitate, yielding Comparative Polymer 1 (weight average molecular weight (Mw) = 4,000 g / mol, polydispersity (PD) = 1.75) consisting of structural units represented by the following chemical formula X.

[0137] [ka]

[0138] Comparative Polymerization Example 2 Comparative polymer 2 (weight average molecular weight (Mw) = 3,000 g / mol) consisting of a structural unit represented by the following chemical formula Y was obtained in the same manner as in Polymerization Example 1, except that 4,4'-bis(methoxymethyl)diphenyl ether was used instead of compound 1.

[0139] [ka]

[0140] [Preparation of hard mask composition] Examples 1 to 7 and Comparative Examples 1 to 2 3.5 g of each of Polymers 1 to 7 and Comparative Polymers 1 to 2 obtained in Polymerization Examples 1 to 7 and Comparative Polymerization Examples 1 to 2 was dissolved in 10 g of a solvent in which propylene glycol monomethyl ether acetate and cyclohexanone were mixed in a volume ratio of 7:3, and then filtered using a syringe filter to prepare a hard mask composition solution.

[0141] [Evaluation 1: Heat resistance evaluation] The hard mask compositions according to Examples 1 to 7 and Comparative Examples 1 and 2 were applied onto a silicon wafer and then heat-treated on a hot plate at 150°C for 2 minutes. The resulting film was then scraped off with a knife, pelletized, and subjected to thermogravimetric analysis (TGA) under air heating conditions. The results are shown in Table 1. In Table 1, T 95 means the temperature at which the residual weight is 95% of the initial weight, and T 90 means the temperature at which the residual weight is 90% of the initial weight.

[0142] [Table 1]

[0143] Referring to Table 1, it can be seen that the thermal decomposition temperatures of the hard mask layers formed from the compositions of Examples 1 to 7 are higher than those of the hard mask layers formed from the compositions of Comparative Examples 1 and 2. These results show that the heat resistance of the hard mask layers of the Examples is superior to that of the hard mask layers of the Comparative Examples.

[0144] [Evaluation 2: Gap-fill and planarization characteristics] The hard mask compositions according to Examples 1 to 7 and Comparative Examples 1 and 2 were applied to the patterned wafers and then heat-treated on a hot plate at 400°C for 2 minutes to form hard mask layers with a thickness of 2,000 Å. Figure 1 is a reference diagram showing an example of a step in a hard mask layer to explain a method for evaluating planarization characteristics.

[0145] The planarization characteristics were calculated by measuring the average thickness (h1) of the thin film measured at three arbitrary points on the substrate where no pattern was formed, and the average thickness (h2) of the thin film measured at three arbitrary points on the substrate where a pattern was formed, using a K-MAC thin film thickness measuring device, and then calculating the step difference (|h1-h2|). The smaller the step difference (|h1-h2|), the better the planarization characteristics.

[0146] The gap-fill characteristics were evaluated by observing the cross section of the pattern with a scanning electron microscope (SEM) to check for the presence or absence of voids. The results are shown in Table 2 below.

[0147] [Table 2]

[0148] Referring to Table 2, the hard mask layers formed from the hard mask compositions according to Examples 1 to 7 had a smaller difference between h1 and h2 than those of Comparative Examples 1 and 2, and no voids were observed within the pattern. On the other hand, the hard mask layers formed from the hard mask compositions according to Comparative Examples 1 and 2 had a larger difference between h1 and h2, and voids were observed within the pattern in Comparative Example 1. From these results, it can be seen that the hard mask layers formed from the compositions according to the examples have excellent planarization properties and gap-fill properties.

[0149] Although the preferred embodiments of the present invention have been described in detail above, the scope of the invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the invention defined in the claims below also fall within the scope of the invention.

Claims

1. A hard mask composition comprising a polymer having a structural unit represented by the following chemical formula 1, and a solvent: 【Chemical 1】 In the above chemical formula 1, A is a group consisting of a substituted or unsubstituted aromatic hydrocarbon ring and a substituted or unsubstituted aromatic heterocycle, or two or more substituted or unsubstituted aromatic hydrocarbon rings, two or more substituted or unsubstituted aromatic heterocycles, or an aromatic hydrocarbon ring and an aromatic heterocycle, each of which is a single bond or -CR ｘ R ｙ - (where R ｘ and R ｙ are each independently a substituted or unsubstituted aromatic hydrocarbon ring or a substituted or unsubstituted aromatic heterocycle, ｘ and R ｙ may be fused to each other to form a fused ring; B is a group represented by the following chemical formula 2: * is the connection point: 【Chemistry 2】 In the above chemical formula 2, X １ and X ２ each independently represents a substituted or unsubstituted saturated or unsaturated aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated alicyclic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated heteroaliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated aliphatic heterocyclic group having 2 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 30 carbon atoms, or a combination thereof; At this time, the X １ and X ２ are bonded to each other to form a ring, R １ ~R ４ are each independently a deuterium atom, a hydroxy group, a halogen atom, or —NR ａ R ｂ (where R ａ and R ｂ are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted cycloalkenyl group having 3 to 20 carbon atoms, a substituted or unsubstituted cycloalkynyl group having 3 to 20 carbon atoms, a substituted or unsubstituted heterocycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 3 to 20 carbon atoms, or a combination thereof; m1 to m4 are each independently one of the integers 0, 1, 2, 3, and 4; n1 and n2 are each independently one of the integers 1, 2, 3, and 4.

2. A in the above chemical formula 1 is a group consisting of a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 20 carbon atoms, or two or more substituted or unsubstituted aromatic hydrocarbon rings having 6 to 20 carbon atoms are joined by a single bond or -CR ｘ R ｙ - (where R ｘ and R ｙ are each independently a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 10 carbon atoms, ｘ and R ｙ The hard mask composition of claim 1 , wherein:

3. 2. The hard mask composition of claim 1, wherein A in Chemical Formula 1 is a substituted or unsubstituted group consisting of at least one of structures selected from the following Group 1 and Group 2: 【Chemistry 3】 【Chemistry 4】 In the above Group 2, Z is —NR ｃ - (where R ｃ is a hydrogen atom, a deuterium atom, or an alkyl group having 1 to 5 carbon atoms; —O—, —S—, or —PR ｄ - (where R ｄ is a hydrogen atom, a deuterium atom, or an alkyl group having 1 to 5 carbon atoms.

4. X in the above formula 2 １ and X ２ are each independently a substituted or unsubstituted saturated or unsaturated aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted saturated or unsaturated alicyclic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, or a combination thereof; At this time, the X １ and X ２ The hard mask composition of claim 1 , wherein:

5. X in the above formula 2 １ and X ２ are each independently a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, or a combination thereof; At this time, the X １ and X ２ The hard mask composition of claim 1 , wherein: are linked to each other to form a ring.

6. The hard mask composition of claim 1, wherein the ring formed by bonding X 1 and X 2 in the above chemical formula 2 together is a substituted or unsubstituted cycloalkane, a substituted or unsubstituted cycloalkene, a substituted or unsubstituted cycloalkyne, or a substituted or unsubstituted aromatic hydrocarbon ring.

7. R in the above formula 2 １ ~R ４ are each independently a deuterium atom, a hydroxy group, a halogen atom, a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, or a combination thereof; and m1 to m4 are each independently one of the integers 0, 1, and 2.

8. X in the above formula 2 １ and X ２ are each independently a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms, or a combination thereof, １ and X ２ are bonded to each other to form a ring; m1 to m4 are each independently 0; and n1 and n2 are each independently 1 or 2.

9. The hard mask composition according to claim 1, wherein the group represented by Chemical Formula 2 is at least one of groups represented by Chemical Formulas 2-1 to 2-3 and 2-5 below: 【Chemistry 5】 In the above chemical formulas 2-1 to 2-3 and 2-5, * indicates a connection point.

10. A hard mask composition comprising a polymer containing at least one structural unit represented by the following Chemical Formula 1-1 to Chemical Formula 1-7, and a solvent: 【Chemistry 6】 In the above chemical formulas 1-1 to 1-7, * indicates a connection point.

11. 2. The hard mask composition of claim 1, wherein the weight average molecular weight of the polymer is 1,000 g / mol to 200,000 g / mol.

12. The hard mask composition of claim 1 , wherein the polymer is included in an amount of 0.1% by weight to 30% by weight based on the total weight of the hard mask composition.

13. 2. The hard mask composition of claim 1, wherein the solvent is propylene glycol, propylene glycol diacetate, methoxypropanediol, diethylene glycol, diethylene glycol butyl ether, tri(ethylene glycol) monomethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, γ-butyrolactone, N,N-dimethylformamide, N,N-dimethylacetamide, methylpyrrolidone, methylpyrrolidinone, acetylacetone, ethyl 3-ethoxypropionate, or a combination thereof.

14. A hard mask layer comprising a cured product of the hard mask composition according to claim 1 .

15. forming a layer of material on a substrate; applying a hard mask composition according to any one of claims 1 to 13 onto the material layer; heat-treating the hard mask composition to form a hard mask layer; forming a photoresist layer on the hard mask layer; exposing and developing the photoresist layer to form a photoresist pattern; selectively removing the hard mask layer utilizing the photoresist pattern to expose portions of the material layer; and A method of patterning comprising etching exposed portions of the layer of material.

16. 16. The pattern formation method of claim 15, wherein the forming of the hard mask layer comprises a heat treatment at 100 to 1,000 degrees Celsius.

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