Light-emitting device

Abstract

To provide a light-emitting device capable of improving heat dissipation properties of a semiconductor laser chip.SOLUTION: A light-emitting device 10 comprises: a base 20 having a main surface 21; a plurality of semiconductor laser chips 60 mounted on the main surface 21 and having an optical axis parallel to the main surface 21; a plurality of mirrors 70 each of which has a reflective surface 71 that reflects emitted light L1 from an emission point E1 of each of the plurality of semiconductor laser chips 60; and an optical member 40 having a plurality of lens parts 43 each of which receives reflected light L2 from the reflective surface 71 of each of the plurality of mirrors 70. In the plan view of the main surface 21, a distance between a center position C1 of the emitted light L1 in the reflective surface 71 and a center position 43C of the lens part 43 corresponding to the reflective surface 71 among the plurality of lens parts 43 increases as a distance between the center position C1 of the emitted light L1 and a center position 44c of a lens region 44 increases, and output light L3 from each of the plurality of lens parts 43 is irradiated inside a predetermined surface area A1.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a light emitting device. [Background technology]

[0002] Conventionally, light emitting devices equipped with multiple semiconductor laser packages have been known (for example, Patent Document 1). The light emitting device described in Patent Document 1 has multiple CAN packages mounted on a mounting substrate, and attempts to collect laser light from the multiple CAN packages using a lens array. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-215633 Summary of the Invention [Problem to be solved by the invention]

[0004] Each of the multiple CAN packages has a semiconductor laser chip. Light-emitting devices are required to have higher output power, and the current supplied to each semiconductor laser chip tends to increase. This increases the amount of heat generated by each semiconductor laser chip, making it necessary to ensure a heat dissipation path from each semiconductor laser chip. However, in the light-emitting device described in Patent Document 1, multiple holes must be formed in the mounting substrate to mount the multiple CAN packages. This reduces the heat dissipation path in the mounting substrate compared to when no holes are formed in the mounting substrate, thereby reducing the heat dissipation characteristics from each semiconductor laser chip through the mounting substrate. Therefore, the amount of current that can be supplied to the semiconductor laser chip may be limited.

[0005] The present disclosure is intended to solve such problems, and has an object to provide a light emitting device that can improve the heat dissipation characteristics of a semiconductor laser chip. [Means for solving the problem]

[0006] In order to solve the above problems, one aspect of the light emitting device according to the present disclosure comprises: a base having a main surface; a plurality of semiconductor laser chips mounted on the main surface and having optical axes parallel to the main surface; a plurality of mirrors each having a reflective surface that reflects light emitted from an emission point of each of the plurality of semiconductor laser chips; and an optical element having a plurality of lens portions that receive light reflected from the reflective surfaces of each of the plurality of mirrors, wherein, in a planar view of the main surface, the distance between the center position of the emitted light on the reflective surface and the center position of a lens portion among the plurality of lens portions that corresponds to the reflective surface increases as the distance between the center position of the emitted light and the center position of a lens region in which the plurality of lens portions are arranged increases, and output light from each of the plurality of lens portions is irradiated within a predetermined surface region having an area smaller than that of the lens region. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to provide a light emitting device that can improve the heat dissipation characteristics of a semiconductor laser chip. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view of a light emitting device according to the first embodiment. [Figure 2] FIG. 2 is a cross-sectional view of the light emitting device according to the first embodiment. [Figure 3] FIG. 3 is a plan view showing the light emitting device according to the first embodiment with the optical members removed. [Figure 4] FIG. 4 is a cross-sectional view showing the configuration of the semiconductor laser chip, the submount, and the mirror according to the first embodiment. [Figure 5] FIG. 5 is a cross-sectional view illustrating an optical path in the light emitting device according to the first embodiment. [Figure 6] FIG. 6 is a diagram showing the positional relationship between a plurality of mirrors and a plurality of lens portions in the light emitting device according to the first embodiment. [Figure 7]FIG. 7 is a plan view showing a state in which the optical members of the light emitting device according to the second embodiment are removed. [Figure 8] FIG. 8 is a cross-sectional view of the light emitting device according to the second embodiment. [Figure 9] FIG. 9 is a plan view showing a state in which the optical members of the light emitting device according to the third embodiment are removed. [Figure 10] FIG. 10 is a cross-sectional view of a light emitting device according to the third embodiment. [Figure 11] FIG. 11 is a plan view showing a state in which the optical members of the light emitting device according to the fourth embodiment are removed. [Figure 12] FIG. 12 is a cross-sectional view of a light emitting device according to the fourth embodiment. [Figure 13] FIG. 13 is a plan view showing a state in which the optical members of the light emitting device according to the fifth embodiment are removed. [Figure 14] FIG. 14 is a cross-sectional view of a light emitting device according to the fifth embodiment. [Figure 15] FIG. 15 is a plan view showing a state in which the optical members of the light emitting device according to the sixth embodiment are removed. [Figure 16] FIG. 16 is a plan view showing a state in which the optical members of the light emitting device according to the seventh embodiment are removed. [Figure 17] FIG. 17 is a plan view showing a state in which the optical members of the light emitting device according to the eighth embodiment are removed. [Figure 18] FIG. 18 is a schematic cross-sectional view of a light emitting device according to the eighth embodiment. [Figure 19] FIG. 19 is a diagram showing a far-field pattern obtained by superimposing all output light profiles in a predetermined surface area of ​​the light emitting device according to the eighth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, and the arrangement and connection of the components shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0010] Furthermore, each figure is a schematic diagram and is not necessarily an exact representation. Therefore, the scales and the like do not necessarily match in each figure. In each figure, the same reference numerals are used to denote substantially the same components, and redundant explanations will be omitted or simplified.

[0011] In this specification, the terms "above" and "below" do not refer to the upward direction (vertically upward) and downward direction (vertically downward) in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in a stacked configuration. Furthermore, the terms "above" and "below" are applied not only to cases where two components are arranged with a gap between them and another component exists between the two components, but also to cases where two components are arranged in contact with each other.

[0012] (Embodiment 1) The light emitting device according to the first embodiment will be described.

[0013] [1-1. Overall structure] First, the overall configuration of a light emitting device according to the present embodiment will be described with reference to Figures 1 to 3. Figures 1 and 2 are a plan view and a cross-sectional view, respectively, of a light emitting device 10 according to the present embodiment. Figure 2 shows a cross section taken along line II-II in Figure 1. Figure 3 is a plan view showing the light emitting device 10 according to the present embodiment with the optical member 40 removed. Each figure also shows an X-axis, a Y-axis, and a Z-axis, which are orthogonal to one another.

[0014] 2, light emitting device 10 according to this embodiment is a device that irradiates light onto a predetermined surface area (not shown) that is located away from light emitting device 10 in the Z direction, and includes a base 20, a plurality of semiconductor laser chips 60, a plurality of mirrors 70, and an optical member 40. In this embodiment, light emitting device 10 further includes a frame member 30 and a plurality of submounts 50.

[0015] 1 to 3 is a member having a main surface 21 on which a plurality of semiconductor laser chips 60 are mounted. In this embodiment, the base 20 is a substrate having a substantially rectangular plate shape. The base 20 is made of a material with high thermal conductivity, and also functions as a heat dissipation member that dissipates heat generated by the plurality of semiconductor laser chips 60.

[0016] The base 20 may be made of, for example, a metal material, a ceramic material, a glass material, or a resin material. In order for the base 20 to efficiently dissipate the heat generated by the semiconductor laser chip 60, the base 20 should be made of a material with high thermal conductivity, such as a metal material. Metal materials with high thermal conductivity that are practical for the base 20 include, for example, Cu or Al. In this embodiment, the base 20 is a Cu substrate made of Cu.

[0017] Note that a structure for fixing the base 20 may be formed on the outer portion of the frame member 30 of the base 20. For example, the base 20 may have a through hole or the like formed therein.

[0018] The frame member 30 shown in FIGS. 2 and 3 is an annular member that surrounds the semiconductor laser chips 60 and the mirrors 70. The frame member 30 is erected on the main surface 21 of the base 20 and functions as part of a container that houses the semiconductor laser chips 60 and the like. The frame member 30 also has the function of supporting the optical member 40. The frame member 30 is sandwiched between the base 20 and the optical member 40. The semiconductor laser chips 60 and the mirrors 70 are housed in the space surrounded by the frame member 30, the base 20, and the optical member 40. Although not shown, the frame member 30 may have current terminals for supplying current to the semiconductor laser chips 60. The frame member 30 is formed of, for example, a metal such as Fe or an alloy. If the frame member 30 has current terminals, an insulating member is arranged around the current terminals.

[0019] 2 and 3 is a semiconductor light-emitting element mounted on the main surface 21 of the base 20 and having an optical axis parallel to the main surface 21. In this embodiment, each of the 20 semiconductor laser chips 60 is mounted on the main surface 21 via a submount 50. The semiconductor laser chips 60 are arranged in a matrix in the X-axis direction and the Y-axis direction, as shown in FIG. 3. Each of the semiconductor laser chips 60 is arranged at a position corresponding to each of the lens portions 43 of the optical member 40.

[0020] The plurality of semiconductor laser chips 60 all have the same configuration. Here, the configuration of the semiconductor laser chip 60 will be described with reference to FIG. 4. FIG. 4 is a cross-sectional view showing the configuration of the semiconductor laser chip 60, the submount 50, and the mirror 70 according to this embodiment. FIG. 4 is an enlarged view of a portion of FIG. 2. As shown in FIG. 4, each of the plurality of semiconductor laser chips 60 has an emission point E1 from which emitted light L1, which is laser light. The optical axis of the emitted light L1 is parallel to the main surface 21 of the base 20. Here, the emitted light L1 is indicated by an arrow, but this arrow indicates the optical axis of the emitted light L1, and the actual emitted light L1 is a divergent light having a width.

[0021] The semiconductor laser chip 60 is elongated with the optical axis direction (i.e., resonance direction) of the emitted light L1 as the longitudinal direction. As an example, the length of the semiconductor laser chip 60 in the optical axis direction is 1200 μm, but is not limited to this.

[0022] The semiconductor laser chip 60 is mounted on the upper surface of the submount 50. Specifically, the semiconductor laser chip 60 is mounted on wiring electrodes (not shown) on the submount 50. In this embodiment, the semiconductor laser chip 60 is mounted on the submount 50 by junction-down mounting. However, the mounting form of the semiconductor laser chip 60 is not limited to this, and the semiconductor laser chip 60 may also be mounted on the submount 50 by junction-up mounting.

[0023] The semiconductor laser chip 60 is mounted so that the end face where the emission point E1 is located protrudes from the end face on the light emission side of the submount 50. In other words, the semiconductor laser chip 60 protrudes from the end face of the submount 50, and the emission point E1 of the semiconductor laser chip 60 is located on the light emission side of the semiconductor laser chip 60 relative to the end face on the light emission side of the submount 50. The amount of protrusion of the semiconductor laser chip 60 (i.e., the distance from the end face on the light emission side of the submount 50 to the emission point E1 of the semiconductor laser chip 60) is, for example, not less than 5 μm and not more than 20 μm, but is not limited to this. In this embodiment, the amount of protrusion of the semiconductor laser chip 60 is 10 μm.

[0024] Each of the multiple submounts 50 shown in FIGS. 2 to 4 is mounted on the main surface 21 of the base 20 and is a member that supports a semiconductor laser chip 60. In this embodiment, the multiple submounts 50 all have the same configuration. As shown in FIG. 4, the submount 50 has a mounting surface 51 that faces the main surface 21 of the base 20, and an attachment surface 52 that is located on the back side of the mounting surface 51 and to which the semiconductor laser chip 60 is attached. In other words, the submount 50 is located between the base 20 and the semiconductor laser chip 60.

[0025] The light emitting device 10 includes the same number of submounts 50 as the semiconductor laser chips 60. In this embodiment, the 20 submounts 50 correspond one-to-one to the 20 semiconductor laser chips 60, respectively.

[0026] The submount 50 also functions as a heat sink for dissipating heat generated by the semiconductor laser chip 60. Therefore, the material of the submount 50 may be either a conductive material or an insulating material, but is preferably made of a material with high thermal conductivity. The thermal conductivity of the submount 50 is preferably 150 W / (m·K) or higher. For example, the submount 50 may be made of ceramics such as aluminum nitride (AlN) or polycrystalline silicon carbide (SiC), metal materials such as Cu, or diamond such as single crystal diamond or polycrystalline diamond. In this embodiment, the submount 50 is made of AlN. The shape of the submount 50 is, for example, a rectangular parallelepiped plate, but is not limited thereto.

[0027] The submount 50 is bonded to the main surface 21 of the base 20 using, for example, a metal bonding material. In other words, the submount 50 is mounted without forming fixing holes or the like in the base 20. Therefore, the submount 50 can be mounted on the base 20 without degrading the heat dissipation characteristics of the base 20.

[0028] As shown in FIG. 4, each of the multiple mirrors 70 is an element having a reflecting surface 71 that reflects the emitted light L1 from the emission point E1 of each of the multiple semiconductor laser chips 60. All of the multiple mirrors 70 have the same configuration. As shown in FIG. 3, the multiple mirrors 70 are arranged in a matrix in the X-axis direction and the Y-axis direction. Each of the multiple mirrors 70 is arranged at a position corresponding to each of the multiple lens portions 43 of the optical member 40. As shown in FIG. 4, the reflecting surface 71 is a flat mirror arranged opposite the emission point E1 of the semiconductor laser chip 60. In this embodiment, the reflecting surface 71 is inclined at 45° with respect to the direction of the emitted light L1. In other words, the direction perpendicular to the reflecting surface 71 is inclined at 45° with respect to the direction of the emitted light L1. The emitted light L1 is reflected by the reflecting surface 71 and propagates from the mirror 70 toward the optical member 40 as reflected light L2. In this embodiment, the outgoing light L1 is incident on the center position 71C of the reflecting surface 71 shown in Fig. 2. Here, the center position 71C of the reflecting surface 71 is defined as the position of the center of gravity of the reflecting surface 71. Furthermore, the reflected light L2 is indicated by an arrow, but this arrow indicates the optical axis of the reflected light L2, and the reflected light L2 is actually divergent light with a width.

[0029] The mirrors 70 are mounted on the main surface 21 of the base 20. As shown in FIG. 3, the light emitting device 10 includes the same number of mirrors 70 as the semiconductor laser chips 60. In this embodiment, the 20 mirrors 70 correspond one-to-one to the 20 semiconductor laser chips 60. Here, the positional relationship between the mirrors 70 and the semiconductor laser chips 60 is the same for all sets. In other words, the distance from the emission point E1 of the semiconductor laser chip 60 to the center position C1 of the emitted light L1 on the reflecting surface 71 is the same for all sets, and the height of the optical axis of the emitted light L1 of the semiconductor laser chip 60 from the main surface 21 and the height of the reflecting surface 71 from the main surface 21 are all the same.

[0030] The optical member 40 shown in FIGS. 1, 2, and 4 is a translucent plate-like member having a plurality of lens portions 43. The optical member 40 is supported by the frame member 30 and also functions as a lid for the area surrounded by the frame member 30. As shown in FIG. 4, each of the plurality of lens portions 43 receives reflected light L2 from the reflecting surface 71 of each of the plurality of mirrors 70. In this embodiment, all of the plurality of lens portions 43 have the same focal length. The lens portions 43 are, for example, spherical lenses. The surface of each lens portion 43 facing the reflecting surface 71 is flat, and the surface behind (i.e., the outer surface) of the lens portion 43 has a spherical convex shape. In other words, the lens portions 43 are convex lenses. The optical member 40 has the same number of lens portions 43 as the semiconductor laser chips 60 and mirrors 70. The plurality of lens portions 43 are arranged in a matrix in the X-axis and Y-axis directions, as shown in FIG. 3. Each of the plurality of lens portions 43 is arranged at a position corresponding to each of the plurality of mirrors 70. In this embodiment, the 20 lens portions 43 correspond one-to-one to the 20 mirrors 70. The optical member 40 is made of a light-transmitting member such as glass.

[0031] 1, the optical member 40 has a lens region 44 in which a plurality of lens portions 43 are arranged. The lens region 44 is, for example, a region surrounded by an envelope 44E of the plurality of lens portions 43. A center position 44C of the lens region 44 is the center of gravity of the lens region 44.

[0032] [1-2. Optical path] Next, the optical path in the light emitting device 10 according to the present embodiment will be described mainly with reference to Figs. 5 and 6. Fig. 5 is a cross-sectional view illustrating the optical path in the light emitting device 10 according to the present embodiment. Fig. 5 shows a partially enlarged view of a cross section similar to Fig. 2, and the optical path. Fig. 6 is a diagram showing the positional relationship between the plurality of mirrors 70 and the plurality of lens units 43 in the light emitting device 10 according to the present embodiment. Fig. 6 shows a plan view of the main surface 21 of the base 20 in a plan view. In Fig. 6, the outlines of the plurality of lens units 43 are also shown by dashed lines.

[0033] As shown in FIG. 5, emitted light L1 from the semiconductor laser chip 60, having an optical axis parallel to the principal surface 21, is reflected by the reflecting surface 71 of the mirror 70 and propagates toward the lens unit 43 as reflected light L2. Here, the direction of the optical axis of the reflected light L2 is parallel to the direction perpendicular to the principal surface 21 of the base 20. The reflected light L2 is incident on the lens unit 43. The direction of the optical axis of the lens unit 43 is parallel to the direction perpendicular to the principal surface 21 of the base 20. The lens unit 43 converts the reflected light L2, which is divergent light, into a parallel or convergent state and outputs it from the light-emitting device 10 as output light L3. Here, the optical axis of the reflected light L2 does not pass through the center of the lens unit 43 and is parallel to the optical axis of the lens unit 43, so the output light L3 from the lens unit 43 is refracted in the direction of the optical axis of the lens unit 43. Although the output light L3 is indicated by an arrow, this arrow indicates the optical axis of the output light L3, and the actual output light L3 is light having a width.

[0034] 5 and 6, in a plan view of the principal surface 21, the distance (Dc) in the X-axis direction between the center position C1 of the output light L1 on the reflecting surface 71 and the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 increases as the distance (De) in the X-axis direction between the center position C1 of the output light L1 and the center position 44C of the lens region 44 in which the plurality of lens portions 43 are arranged increases. Here, the center position C1 of the output light L1 on the reflecting surface 71 is defined as the center of gravity of the beam profile of the output light L1 or the position where the intensity of the output light L1 is maximized. Furthermore, the center position 43C of the lens portion 43 is defined as the position through which the optical axis (the dashed line shown in FIG. 5) of the lens portion 43 passes in a plan view of the principal surface 21. Although no auxiliary lines are shown in the figures, the center position C1 of the output light L1 on the reflecting surface 71 also changes in the Y-axis direction.

[0035] Furthermore, in this embodiment, the distance in the X-axis direction between center position 71C of reflecting surface 71 and center position 43C of the lens portion 43 among the plurality of lens portions 43 that corresponds to reflecting surface 71 in a plan view of main surface 21 increases as the distance in the X-axis direction between center position 71C of reflecting surface 71 and center position 44C of lens region 44 increases. In this embodiment, center position C1 of output light L1 on reflecting surface 71 coincides with center position 71C of reflecting surface 71. Note that center position C1 of output light L1 on reflecting surface 71 does not have to coincide with center position 71C of reflecting surface 71.

[0036] With the above configuration, as shown in FIG. 5, as the distance between the center position C1 of the emitted light L1 and the center position 44C of the lens region 44 increases, the refraction angle of the optical axis of the reflected light L2 at the lens section 43 increases.

[0037] Therefore, output light L3 from each of the plurality of lens portions 43 is irradiated onto the interior of the predetermined surface area A1, which has an area smaller than that of the lens area 44. In this way, according to the light emitting device 10 of the present embodiment, the plurality of output light beams L3 can be condensed into the predetermined surface area A1, which has an area smaller than that of the lens area 44, without disposing a condensing lens between the optical member 40 and the predetermined surface area A1.

[0038] Here, by making Dc proportional to De, the optical axes of all output light beams L3 can be converged to one location. Similarly, the center position 71C of the reflecting surface 71 also changes in the Y-axis direction. As shown in FIG. 6, the center position 43C of the lens portion 43 is located on the line segment connecting the center position C1 of the output light beam L1 and the center position 44C of the lens region 44, but it does not necessarily have to be located exactly on that line segment. Furthermore, although the optical axis direction of each output light beam L3 generally points toward the center position of the lens region 44 in a planar view, it does not necessarily have to point exactly toward the center position. Furthermore, by making the distances from the emission point E1 of the semiconductor laser chip 60 to the center position C1 of the output light beam L1 on the reflecting surface 71 the same for all beams, the distances from the emission point E1 of the semiconductor laser chip 60 to the lens portion 43 are all the same, and the influence of changes in the positions of the semiconductor laser chip 60 and the mirror 70 on the convergence state of the output light beam L3 can be minimized. Furthermore, since the center position C1 of the emitted light L1 on the reflecting surface 71 coincides with the center position 71C of the reflecting surface 71, the emitted light L1 can be efficiently reflected by the mirror .

[0039] Furthermore, in this embodiment, by making the output light L3 a condensed beam focused by the lens unit 43, the output light L3 can be condensed in a predetermined surface area A1 having a smaller area than when the output light L3 is not a condensed beam. In other words, the area of ​​the far-field pattern formed by the multiple output light beams L3 can be reduced. Therefore, the light density in the predetermined surface area A1 can be further increased.

[0040] [1-3.Effects] Next, the effects of the light emitting device 10 according to this embodiment will be described. As shown in FIG. 2, the light emitting device 10 according to this embodiment includes a plurality of semiconductor laser chips 60. Each of the plurality of semiconductor laser chips 60 is mounted on the main surface 21 of the base 20 and has an optical axis parallel to the main surface 21. The semiconductor laser chip 60 is mounted on the main surface 21 via a submount 50. Here, the submount 50 can be mounted on the base 20 without forming a fixing hole or the like in the base 20, so the submount 50 can be mounted on the base 20 without degrading the heat dissipation characteristics of the base 20. Furthermore, the semiconductor laser chip 60 can be mounted on the base 20 only via the submount 50. In other words, the semiconductor laser chip 60 can be mounted in close proximity to the main surface 21 of the base 20. Therefore, by using a submount 50 with high thermal conductivity, the heat dissipation characteristics from the semiconductor laser chip 60 to the base 20 can be improved compared to when a CAN package containing the semiconductor laser chip 60 is mounted on the base 20. As described above, according to this embodiment, a light emitting device 10 capable of improving the heat dissipation characteristics of a plurality of semiconductor laser chips 60 can be realized.

[0041] [1-4. Manufacturing method] Next, a method for manufacturing the light emitting device 10 according to this embodiment will be described.

[0042] First, a semiconductor laser chip 60 is mounted on each of the multiple submounts 50. Specifically, the semiconductor laser chip 60 is bonded to the mounting surface 52 of the submount 50 using a metallic bonding material. A Zener diode for maintaining a constant voltage supplied to the semiconductor laser chip 60 may also be bonded to the mounting surface 52 of the submount 50. As the metallic bonding material, for example, a solder material such as AuSn or AuGeNi, or a bonding material containing fine particles of Cu, Al, Au, Ag, or an alloy thereof can be used.

[0043] Next, the submount 50 on which the semiconductor laser chip 60 is mounted is mounted on the main surface 21 of the base 20. Specifically, the submount 50 is bonded to the main surface 21 of the base 20 using a metallic bonding material. Examples of the metallic bonding material include solder materials such as AuSn and AuGeNi, and bonding materials containing fine particles of Cu, Al, Au, Ag, and alloys thereof. When bonding the submount 50 to the main surface 21, the base 20, the submount 50, and the metallic bonding material are heated, for example, at 200°C for about 30 minutes. Thereafter, the metallic bonding material is cooled to harden it. This allows the submount 50 to be mounted on the base 20. The frame member 30 is mounted on the base 20 in advance. Alternatively, the frame member 30 may be formed integrally with the base 20.

[0044] Next, a wire for supplying current to the semiconductor laser chip 60 is connected to the semiconductor laser chip 60. Specifically, for example, a terminal provided on the frame member 30 is connected to the semiconductor laser chip 60 by a wire, and two adjacent semiconductor laser chips 60 are connected in series by a wire. This makes it possible to supply current from outside the light emitting device 10. The material of the wire is not particularly limited as long as it is conductive, and examples thereof include Au, Ag, and Cu.

[0045] Next, the mirror 70 is mounted on the main surface 21 of the base 20. Specifically, the mirror 70 is bonded to the main surface 21 of the base 20 using a metallic bonding material. Before the metallic bonding material is hardened, active alignment of the mirror 70 is performed. That is, a current is supplied to the semiconductor laser chip 60 to emit the emitted light L1, and the position of the mirror 70 on the main surface 21 is adjusted while checking the position of the emitted light L1 on the reflecting surface 71 of the mirror 70 and the position of the reflected light L2 from the mirror 70. After the alignment of the mirror 70 is completed, the metallic bonding material is hardened in the same way as when mounting the submount 50. This allows the mirror 70 to be mounted on the base 20.

[0046] Next, the optical element 40 is mounted on the base 20. In this embodiment, the optical element 40 is mounted on the base 20 via the frame element 30. Specifically, the optical element 40 is bonded to the frame element 30 using an adhesive or the like. As the adhesive, for example, a UV-curable adhesive can be used. First, the UV-curable adhesive is applied to at least one of the frame element 30 and the optical element 40 to temporarily fix the optical element 40. Next, active alignment of the position of the optical element 40 in the X, Y, and Z axis directions is performed. After the alignment of the optical element 40 is completed, the UV-curable adhesive is irradiated with UV light to harden the UV-curable adhesive. This allows the optical element 40 to be mounted on the base 20.

[0047] As described above, the light emitting device 10 according to the present embodiment can be manufactured. A light-transmitting member such as a cover glass may be attached between the optical member 40 and the frame member 30. The plurality of lens portions 43 of the optical member 40 may be configured to be separable from the optical member 40. In this case, the plurality of lens portions 43 may be individually active aligned.

[0048] (Embodiment 2) A light emitting device according to embodiment 2 will be described. In light emitting device 10 according to embodiment 1, the positions of mirror 70 and semiconductor laser chip 60 relative to lens portion 43 are changed in plan view while maintaining the positional relationship between them according to the distance from center position 44C of lens region 44 to center position 71C of reflecting surface 71 of mirror 70. The light emitting device according to this embodiment differs from light emitting device 10 according to embodiment 1 in that the positions of mirror 70 and semiconductor laser chip 60 relative to lens portion 43 are not changed, but the height of the optical axis of emitted light L1 from main surface 21 of base 20 is changed. The light emitting device according to this embodiment will be described below with reference to FIGS. 7 and 8, focusing on the differences from light emitting device 10 according to embodiment 1.

[0049] FIG. 7 is a plan view showing a state in which the optical member 40 of the light emitting device 110 according to the present embodiment has been removed. FIG. 7 shows a plan view of the main surface 21 of the base 20 in a plan view. In FIG. 7, the outlines of the plurality of lens portions 43 are also shown by dashed lines. FIG. 8 is a cross-sectional view of the light emitting device 110 according to the present embodiment. FIG. 8 shows a cross-section taken along line VIII-VIII in the X-axis direction of FIG. 7. Note that FIG. 8 also shows a cross-section of the optical member 40.

[0050] The light emitting device 110 according to this embodiment includes a base 20, a frame member 30, an optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 53a to 53d, 54a to 54d, 55a to 55d, 56a to 56d, and 57a to 57d, and a plurality of mirrors 70.

[0051] 7, in a plan view of the main surface 21 of the base 20, the relative positions of each of the plurality of mirrors 70 and each of the plurality of lens portions 43 are the same for all of the mirrors 70. In the example of the light-emitting device 110 according to this embodiment, in a plan view of the main surface 21, the center position 43C of each of the plurality of lens portions 43 coincides with the center position 71C of the reflecting surface 71 corresponding to each of the plurality of lens portions 43. In addition, the distances from the emission point E1 of the semiconductor laser chip 60 to the center position 71C of the reflecting surface 71 are all the same. In other words, the positional relationship between the semiconductor laser chip 60 and the mirror 70 is the same for all.

[0052] As shown in FIG. 8 , the submounts 53a-53d, 54a-54d, 55a-55d, 56a-56d, and 57a-57d differ from the submount 50 according to the first embodiment in that they have different heights. The direction of the optical axis of the reflected light L2 is parallel to the direction perpendicular to the main surface 21 because the angle of the reflecting surface with respect to the main surface is 45°. The absolute value of the difference between the height from the main surface 21 to the emission point E1 of each of the semiconductor laser chips 60 and the average height from the main surface 21 to the emission point E1 of each of the semiconductor laser chips 60 increases as the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43 corresponding to each of the submounts increases. Therefore, the distance from the main surface 21 to the optical axis of the semiconductor laser chip 60, i.e., the position of the reflected surface 71 of the emitted light L1 in the X-axis direction, varies depending on the height of the submount.

[0053] As a result, in the light-emitting device 110 according to the present embodiment, as in the light-emitting device 10 according to the first embodiment, in a plan view of the main surface 21, the distance in the X-axis direction between the center position C1 of the output light L1 on the reflecting surface 71 and the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 increases as the distance in the X-axis direction between the center position C1 of the output light L1 and the center position 44C of the lens region 44 in which the plurality of lens portions 43 are arranged increases. Therefore, the position of the reflected light L2 incident on each of the plurality of lens portions 43 according to the present embodiment is the same as in the first embodiment in the X-axis direction, and the output light L3 is refracted toward the center of the lens region 44 in the X-axis direction. However, it is not refracted in the Y-axis direction. Here, as shown in FIG. 7 , the optical axis of each output light L3 is generally oriented toward the center of the lens region 44 in the X-axis direction in a plan view, but this need not be strictly oriented.

[0054] Therefore, in the light emitting device 110 according to this embodiment, a plurality of output lights L3 can also be condensed in the predetermined surface area A1, which has an area smaller than that of the lens area 44, without disposing a condensing lens.

[0055] Here, since the absolute value of the difference from the average height is proportional to De, it is possible to collect the optical axes of all output light L3 at approximately one location. Also, in the Y-axis direction, as in the first embodiment, by increasing the distance in the Y-axis direction between the center position of output light L1 on reflecting surface 71 and center position 43C of lens portion 43 corresponding to reflecting surface 71 as the distance in the Y-axis direction between center position C1 of output light L1 and center position 44C of lens region 44 in which the plurality of lens portions 43 are arranged increases (not shown), it is possible to collect the plurality of output light L3 in a predetermined surface region A1 whose area is smaller than that of lens region 44 without placing a collecting lens. Furthermore, when the distances from the position of the emission point E1 of the semiconductor laser chip 60 in a planar view to the center position 71C of the reflecting surface 71 are all the same, the angle between the main surface 21 of the base 20, which is parallel to the emission light L1, and the reflecting surface 71 is 45°. Therefore, even if the height from the main surface 21 to the position of the emission point E1 of the semiconductor laser chip 60 changes, the sum of the distance from the emission point E1 of the semiconductor laser chip 60 to the center position of the emission light L1 on the reflecting surface 71 and the distance from the center position of the emission light L1 on the reflecting surface 71 to the lens portion 43 remains constant, and the influence of the height from the main surface 21 to the position of the emission point E1 of the semiconductor laser chip 60 on the focusing state of the output light L3 can be extremely reduced.

[0056] Furthermore, in the light emitting device 110 according to this embodiment and in all of the other embodiments of the light emitting devices 210 to 710 described later, each of the multiple semiconductor laser chips 60 is mounted on the main surface 21 and has an optical axis parallel to the main surface 21, and therefore, the same effect of improving heat dissipation characteristics as in the light emitting device 10 according to embodiment 1 is achieved.

[0057] (Embodiment 3) A light emitting device according to embodiment 3 will be described. The light emitting device according to this embodiment differs from light emitting device 110 according to embodiment 2 in that the height of the optical axis of emitted light L1 from main surface 21 is the same for all semiconductor laser chips 60, but the height of reflecting surface 71 from main surface 21 is changed, and the distance between emission point E1 and center position 71C of reflecting surface 71 in plan view is changed. The light emitting device according to this embodiment will be described below with reference to FIGS. 9 and 10, focusing on the differences from light emitting device 110 according to embodiment 2.

[0058] FIG. 9 is a plan view showing a state in which the optical member 40 of the light emitting device 210 according to the present embodiment has been removed. FIG. 9 shows a plan view of the main surface 21 of the base 20 in a plan view. In FIG. 9, the outlines of the plurality of lens portions 43 are also shown by dashed lines. FIG. 10 is a cross-sectional view of the light emitting device 210 according to the present embodiment. FIG. 10 shows a cross-section taken along line XX in FIG. 9. Note that FIG. 10 also shows a cross-section of the optical member 40.

[0059] The light emitting device 210 according to this embodiment includes a base 20, a frame member 30, an optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 50, and a plurality of mirrors 73a to 73d, 74a to 74d, 75a to 75d, 76a to 76d, and 77a to 77d.

[0060] The submounts 50 according to this embodiment have the same configuration as the submounts 50 according to embodiment 1. Therefore, the distances of the optical axes of the semiconductor laser chips 60 mounted on the submounts 50 from the main surface 21 are all the same.

[0061] Each of the plurality of mirrors 73a to 73d, 74a to 74d, 75a to 75d, 76a to 76d, and 77a to 77d has a reflective surface 71 similar to mirror 70 according to embodiment 2. As shown in Fig. 9, in a plan view of main surface 21 of base 20, the relative position between each of the plurality of mirrors and each of the plurality of lens portions 43 is the same for all mirrors. In the example of light-emitting device 210 according to this embodiment, in a plan view of main surface 21, center position 43C of each of the plurality of lens portions 43 and center position 71C of reflective surface 71 corresponding to each of the plurality of lens portions 43 coincide with each other.

[0062] 10 , the multiple mirrors according to this embodiment differ from the multiple mirrors 70 according to the first embodiment in that the heights of the centers 71C of the reflecting surfaces 71 from the main surface 21 are not the same. The direction of the optical axis of the reflected light L2 is parallel to the direction perpendicular to the main surface 21 because the angle of the reflecting surface 71 with respect to the main surface 21 is 45°. The absolute value of the difference between the height from the main surface 21 to the center 71C of the reflecting surface 71 and the average height from the main surface 21 to the center 71C of the reflecting surface 71 for the multiple mirrors increases as the distance from the center 44C of the lens region 44 to the center 43C of the lens portion 43 corresponding to each of the multiple mirrors increases. Therefore, the position of the output light L1 in the X-axis direction on the reflecting surface 71 varies depending on the height from the main surface 21 of the center 71C of the reflecting surface 71. As a result, in the light-emitting device 210 according to the present embodiment, as in the light-emitting device 10 according to the first embodiment, in a plan view of the main surface 21, the distance between the center position C1 of the output light L1 on the reflecting surface 71 and the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 increases as the distance between the center position C1 of the output light L1 and the center position 44C of the lens region 44 in which the lens portions 43 are arranged increases. Therefore, the position of the reflected light L2 incident on each of the lens portions 43 according to the present embodiment is the same as in the first embodiment in the X-axis direction, and the output light L3 is refracted toward the center of the lens region 44 in the X-axis direction. However, it is not refracted in the Y-axis direction. Here, as shown in FIG. 9 , the optical axis of each output light L3 is generally oriented toward the center of the lens region 44 in the X-axis direction in a plan view, but this does not necessarily have to be strictly oriented. Therefore, in the light emitting device 210 according to this embodiment, a plurality of output lights L3 can also be condensed in the predetermined surface area A1, which has an area smaller than that of the lens area 44, without disposing a condensing lens.

[0063] In the third embodiment, the absolute value of the difference between the average height of the center position 71C of the reflecting surface 71 and the center position 71C of the reflecting surface 71 is proportional to De, so that the optical axes of all the output light L3 can be converged to approximately one location. Furthermore, since the angle between the output light L1 and the reflecting surface 71 is 45°, the distance from the center position of the output light L1 on the reflecting surface 71 to the lens unit 43 is shortened by the same amount as the change in height from the main surface 21 to the center position 71C of the reflecting surface 71. Therefore, as shown in FIG. 10 , by increasing the distance from the output point E1 of the semiconductor laser chip 60 to the center position 71C of the reflecting surface 71 by the same amount, the sum of the distance from the output point E1 of the semiconductor laser chip 60 to the center position 71C of the reflecting surface 71 and the distance from the main surface 21 to the center position 71C of the reflecting surface 71 can be made constant. This significantly reduces the effect of the change in height from the main surface 21 to the center position 71C of the reflecting surface 71 on the convergence state of the output light L3. Furthermore, in the Y-axis direction, as in embodiment 1, the distance in the Y-axis direction between the center position of the output light L1 on the reflecting surface 71 and the center position 43C of the lens section 43 among the multiple lens sections 43 that corresponds to the reflecting surface 71 is increased as the distance in the Y-axis direction between the center position C1 of the output light L1 and the center position 44C of the lens area 44 in which the multiple lens sections 43 are arranged increases (not shown), thereby making it possible to focus multiple output lights L3 on a specified surface area A1 whose area is smaller than the lens area 44 without placing a focusing lens.

[0064] (Fourth embodiment) A light emitting device according to embodiment 4 will be described. The light emitting device according to this embodiment differs from the light emitting device 10 according to embodiment 1 mainly in that the direction of the optical axis of at least a portion of the reflected light L2 differs from the direction of the optical axis of the lens portion 43. The light emitting device according to this embodiment will be described below with reference to FIGS. 11 and 12, focusing on the differences from the light emitting device 10 according to embodiment 1.

[0065] FIG. 11 is a plan view showing a state in which the optical member 40 of the light-emitting device 310 according to the present embodiment has been removed. FIG. 11 shows a plan view of the main surface 21 of the base 20 in a plan view. In FIG. 11, the outlines of the multiple lens portions 43 are also shown by dashed lines. FIG. 12 is a cross-sectional view of the light-emitting device 310 according to the present embodiment. FIG. 12 shows a cross-section taken along line XII-XII in FIG. 11. Note that FIG. 12 also shows a cross-section of the optical member 40.

[0066] Light emitting device 310 according to the present embodiment includes base 20, frame member 30, optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 50, and a plurality of mirrors 373a-373d, 374a-374d, 375a-375d, 376a-376d, and 377a-377d. As shown in Fig. 11, in a plan view of main surface 21, each mirror is arranged such that a direction perpendicular to reflecting surface 71 of each mirror projected onto main surface 21 (for example, the direction of dashed arrow 71D shown for mirror 374b in Fig. 11) is parallel to a line connecting center position 71C of reflecting surface 71 and center position 44C of lens region 44 (for example, a two-dot chain line connecting center position 44C of lens region 44 shown in Fig. 11 and center position 71C of reflecting surface 71 of mirror 374b). In addition, each semiconductor laser chip 60 and the submount 50 are arranged so that the direction of the optical axis of the emitted light L1 from each semiconductor laser chip 60 coincides with the direction perpendicular to the reflecting surface 71 on which the emitted light L1 is incident, projected onto the main surface 21.

[0067] Each of the plurality of mirrors according to the present embodiment has a reflecting surface 71, similar to mirror 70 according to embodiment 1. As shown in FIG. 12 , the plurality of mirrors according to the present embodiment are the same as those of embodiment 1 in that the optical axis of reflected light L2 passes through the optical center of lens portion 43. However, they differ from mirror 70 according to embodiment 1 in the inclination of reflecting surface 71. In the present embodiment, the absolute value of the difference between the angle Dm perpendicular to main surface 21 and direction D71 perpendicular to reflecting surface 71 (see angle θr of mirror 375a in FIG. 12 ) and the average value of the angle formed by the plurality of mirrors increases as the distance from center position 44C of lens region 44 to center position 43C of the lens portion 43 corresponding to reflecting surface 71 among the plurality of lens portions 43 increases. As a result, the angle (see angle θ2 in FIG. 12) formed between the direction of the optical axis of reflected light L2 and the direction perpendicular to main surface 21 (or the direction of the optical axis of lens portion 43) increases as the distance from center position 44C of lens region 44 to center position 43C of lens portion 43 that receives reflected light L2 among the multiple lens portions 43 increases. In this embodiment, since the optical axis of reflected light L2 passes through the center position (optical center) of lens portion 43 as shown in FIG. 12, even if the optical axis of lens portion 43 and the optical axis of reflected light L2 are misaligned, reflected light L2 and output light L3 propagate in the same direction.

[0068] Therefore, the optical axis of the reflected light L2 is not refracted by the lens unit 43, and the optical axis of the output light L3 is tilted with respect to the optical axis of the lens unit 43, so that the output light L3 can be focused on the predetermined surface area A1. As described above, in this embodiment, since the optical axis of the reflected light L2 does not need to be refracted by the lens unit 43, the reflected light L2 can be incident near the optical axis of the lens unit 43. Therefore, the coma aberration of the output light L3 can be reduced, and distortion of the profile of the output light L3 in the predetermined surface area A1 can be suppressed. In other words, the output light L3 can be reliably focused on the predetermined surface area A1.

[0069] Here, the absolute value of the difference from the average value of this formed angle is proportional to the distance from center position 44C of lens region 44 to center position 43C of lens section 43, so that the optical axes of all output light L3 can be converged to approximately one location. Also, as shown in Fig. 11, the optical axes of the respective reflected lights L2 and output light L3 are generally oriented toward the center position of lens region 44 in a plan view, but they do not necessarily have to be oriented strictly toward the center position.

[0070] 11, the angle formed between the direction perpendicular to the reflecting surface 71 projected onto the main surface 21 and the direction of incidence of the output light L1 on the reflecting surface 71 is the same for all of the mirrors. In this embodiment, this angle is 0°. By making the angle the same, it is possible to unify the standards for position inspection after mounting, and the inspection becomes easier.

[0071] Here, by positioning the semiconductor laser chip 60 so that the sum of the distance from the emission point E1 of the semiconductor laser chip 60 to the center position of the emitted light L1 on the reflecting surface 71 and the distance from the center position of the emitted light L1 on the reflecting surface 71 to the lens portion 43 is constant, the effect of changes in the angle of the reflecting surface 71 on the focusing state of each output light L3 can be extremely reduced.

[0072] (Embodiment 5) A light emitting device according to embodiment 5 will be described. The light emitting device according to this embodiment differs from light emitting device 310 according to embodiment 4 in the configuration of the multiple mirrors. The light emitting device according to this embodiment will be described below with reference to FIGS. 13 and 14, focusing on the differences from light emitting device 310 according to embodiment 4.

[0073] FIG. 13 is a plan view showing a state in which the optical member 40 of a light-emitting device 410 according to the present embodiment has been removed. FIG. 13 shows a plan view of the main surface 21 of the base 20 in a plan view. In FIG. 13, the outlines of a plurality of lens portions 43 are also shown by dashed lines. FIG. 14 is a cross-sectional view of the light-emitting device 410 according to the present embodiment. FIG. 14 shows a cross-section taken along line XIV-XIV in FIG. 13. Note that FIG. 14 also shows a cross-section of the optical member 40.

[0074] A light emitting device 410 according to this embodiment includes a base 20, a frame member 30, an optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 50, and a plurality of mirrors 470. In this embodiment, the light emitting device 410 further includes a plurality of supports 83a to 83d, 84a to 84d, 85a to 85d, 86a to 86d, and 87a to 87d, as shown in Fig. 13. Here, the supports may be formed integrally with the base, or may be formed as separate members.

[0075] As shown in Fig. 14, each of the plurality of mirrors 470 is a plate-like element having a reflecting surface 71. In this embodiment, each of the plurality of mirrors 470 has a plate-like shape with the rectangular reflecting surface 71 as one main surface. In other words, each of the plurality of mirrors 470 has a rectangular parallelepiped shape. The plurality of mirrors 470 are respectively leaned against a plurality of supports 83a to 83d, 84a to 84d, 85a to 85d, 86a to 86d, and 87a to 87d. Note that each of the plurality of mirrors 470 may be bonded to the main surface 21 of the base 20 and the corresponding support with a bonding material or the like.

[0076] Each of the plurality of support portions 83a to 83d, 84a to 84d, 85a to 85d, 86a to 86d, and 87a to 87d shown in FIG. 13 is disposed on the main surface 21 of the base 20 and supports the mirror 470. In this embodiment, the plurality of support portions form a step between the main surface 21 and the support portion. The plurality of support portions have different dimensions. Specifically, as shown in FIG. 14, the absolute value of the difference (|Hs-Hsm|) between the height of the support portion from the main surface 21 (see the height Hs of the support portion 85d shown in FIG. 14) and the average value of the heights of the plurality of support portions (see the average height Hsm of the support portions shown in FIG. 14) increases as the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43 that corresponds to the reflecting surface 71 of the mirror 470 supported by the support portion increases. As a result, similar to the fourth embodiment, the absolute value of the difference between the angle (θr) formed between the direction perpendicular to the main surface 21 and the direction perpendicular to the reflecting surface 71 and the average value of the angle formed for the multiple mirrors increases as the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 increases. Therefore, in the light-emitting device 410 according to the present embodiment, the positional relationship between the emitted light L1 from the semiconductor laser chip 60, the reflected light L2 from the reflecting surface 71, and the output light L3 from the lens portion 43 is the same as in the fourth embodiment, and therefore the same effect as in the fourth embodiment is achieved. Here, the absolute value of the difference from the average value of the angle formed is proportional to the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43, so that the optical axes of all the output light L3 can be converged to approximately one location. Furthermore, in this embodiment, the inclination angle of each of the multiple mirrors 470 relative to the main surface 21 of the base 20 can be adjusted, enabling precise optical axis adjustment. Furthermore, since the plurality of mirrors 470 can have a common structure, the manufacture of the plurality of mirrors 470 can be facilitated and the cost required for the plurality of mirrors 470 can be reduced.

[0077] (Sixth embodiment) A light emitting device according to embodiment 6 will be described. The light emitting device according to this embodiment differs from light emitting device 310 according to embodiment 4 mainly in the configuration of a plurality of semiconductor laser chips 60 and a plurality of mirrors 70. The light emitting device according to this embodiment will be described below with reference to FIG. 15, focusing on the differences from light emitting device 310 according to embodiment 4.

[0078] Fig. 15 is a plan view showing a state in which the optical member 40 of the light emitting device 510 according to the present embodiment has been removed. Fig. 15 shows a plan view of the main surface 21 of the base 20. In Fig. 15, the outlines of the multiple lens portions 43 are also shown by dashed lines, and the optical axis of the reflected light L2 from the mirror 70 and the optical axis of the output light L3 are also shown.

[0079] The light emitting device 510 according to the present embodiment includes a base 20, a frame member 30, an optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 50, and a plurality of mirrors 70. The plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 have the same configurations as the plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 according to the first embodiment, except for their arrangement.

[0080] In this embodiment, the angle between the reflecting surface 71 of the mirror 70 and the main surface 21 of the base 20 is 45°. When direction A (the direction of the dashed line in FIG. 15, i.e., the X-axis direction) obtained by projecting a direction perpendicular to the reflecting surface 71 onto the main surface 21 coincides with the optical axis of the emitted light L1, the reflected light L2 travels in direction B (Z-axis direction) perpendicular to the main surface 21 of the base 20. When they do not coincide, if the vector of the emitted light L1 is decomposed into direction A and direction C (Y direction) orthogonal to direction A in a plane parallel to the main surface 21, the vector of the reflected light L2 will have components in directions B and C. That is, in a planar view, the reflected light L2 will be directed in direction C (Y-axis direction).

[0081] In this embodiment, in a plan view of the main surface 21 of the base 20, the angle formed between the direction perpendicular to the reflecting surface 71 of the mirror 70 projected onto the main surface 21 of the base 20 and the direction of the optical axis of the emitted light L1 from the semiconductor laser chip 60 is adjusted, so that the direction of the reflected light L2 is tilted with respect to the direction perpendicular to the main surface 21. Specifically, the angle formed between the direction perpendicular to the reflecting surface 71 projected onto the main surface 21 (the direction of the dashed line shown in FIG. 15) and the direction of the emitted light L1 (the direction of the dot-dash line shown in FIG. 15) increases as the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43 corresponding to the reflecting surface 71 among the multiple lens portions 43 increases. As a result, the angle between the direction of the optical axis of reflected light L2 and the direction perpendicular to the main surface 21 increases as the distance from the center position 44C of the lens region 44 to the center position 43C of one of the lens portions 43 that receives the reflected light L2 increases. Therefore, in the light-emitting device 510 according to the present embodiment, as in the light-emitting device 310 according to the fourth embodiment, the angle between the direction of the optical axis of reflected light L2 and the direction perpendicular to the main surface 21 increases as the distance from the center position 44C of the lens region 44 to the center position 43C of one of the lens portions 43 that receives the reflected light L2 increases, thereby achieving a similar light-condensing effect. In particular, as described in the first embodiment, when the optical axis of reflected light L2 passes through a location that is shifted from the center position 43C of the lens portion, the output light L3 changes direction and travels toward the center position 43C of the lens portion. Therefore, by appropriately positioning the light-emitting device 510 according to the first embodiment, the output light L3 can be directed toward the center position 44C of the lens region 44 (see the arrow indicating the output light L3 in FIG. 15 ). In other words, a plurality of output lights L3 can be condensed onto the predetermined surface area A1.

[0082] Here, this angle is approximately proportional to the distance from the center position 44C of the lens region 44 to the center position 43C of the lens portion 43, so that the optical axes of all the output light L3 can be converged to approximately one point.

[0083] Furthermore, in this embodiment, it is possible to use the same mirrors as the plurality of mirrors 70. This allows the configuration of light emitting device 510 to be simplified.

[0084] Furthermore, in this embodiment, the direction perpendicular to the reflecting surface 71 of the mirror 70 projected onto the main surface is the direction of the dashed line shown on each mirror 70 in FIG. 15, and is the same direction for all of the multiple mirrors (i.e., the X-axis direction in FIG. 15). In this way, the orientations of the multiple mirrors 70 can be unified, so the multiple mirrors 70 can be aligned. This makes it easier to mount the multiple mirrors 70.

[0085] In this embodiment, the angle (45°) between the direction perpendicular to the reflective surface 71 and the main surface 21 is the same for all of the multiple mirrors 70. In this way, the same mirrors can be used for all of the multiple mirrors 70, simplifying the configuration of the light-emitting device 510. Also, because the reflective surfaces 71 of multiple mirrors lined up in a row can be set to the same plane, the multiple mirrors can be replaced with a single mirror connected in the row direction, further simplifying the configuration.

[0086] 15 is located at the same position in the Y-axis direction as the center position 44C of the lens region 44 (the four semiconductor laser chips 60 arranged in the third row from the top in FIG. 15), the angles formed between the direction perpendicular to the reflecting surface 71 projected onto the main surface 21 and the direction of the emitted light L1 are all 0°, and do not increase as the distance from the center position 44C of the lens region 44 increases. Such a combination of the emitted light L1 and the mirror 70 may be included in the light-emitting device 510.

[0087] (Embodiment 7) A light emitting device according to embodiment 7 will be described. The light emitting device according to this embodiment differs from light emitting device 510 according to embodiment 6 mainly in the configuration of a plurality of semiconductor laser chips 60 and a plurality of mirrors 70. The light emitting device according to this embodiment will be described below with reference to FIG. 16, focusing on the differences from light emitting device 510 according to embodiment 6.

[0088] Fig. 16 is a plan view showing a state in which the optical member 40 of the light-emitting device 610 according to the present embodiment has been removed. Fig. 16 shows a plan view of the main surface 21 of the base 20. In Fig. 16, the outlines of the multiple lens portions 43 are also shown by dashed lines, and the optical axes of the reflected light L2 from the mirror 70 and the output light L3 are also shown.

[0089] The light emitting device 610 according to the present embodiment includes a base 20, a frame member 30, an optical member 40, a plurality of semiconductor laser chips 60, a plurality of submounts 50, and a plurality of mirrors 70. The plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 have the same configurations as the plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 according to the first embodiment, respectively, except for their arrangement.

[0090] In the present embodiment, as in the sixth embodiment, the direction of the reflected light L2 is tilted with respect to the direction perpendicular to the main surface 21 by adjusting the angle between the direction in which the direction perpendicular to the reflecting surface 71 of the mirror 70 is projected onto the main surface 21 of the base 20 (the direction of the dashed line shown in FIG. 16 ) in a plan view of the main surface 21 of the base 20 and the direction of the optical axis of the emitted light L1 from the semiconductor laser chip 60 (the direction of the dot-dash line shown in FIG. 16 ). In this embodiment, the direction perpendicular to the reflecting surfaces 71 of the multiple mirrors 70 is changed depending on the distance from the center position 44C of the lens region 44. Specifically, in a plan view of the main surface 21, the angle between the direction in which the direction perpendicular to the reflecting surface 71 is projected onto the main surface 21 and the line connecting the center position 71C of the reflecting surface 71 and the center position 44C of the lens region 44 increases as the distance from the center position 44C of the lens region 44 to the center position 71C of the reflecting surface 71 increases. As a result, the angle between the direction of the optical axis of reflected light L2 and the direction perpendicular to main surface 21 increases as the distance from center position 44C of lens region 44 to center position 43C of lens portion 43 that receives reflected light L2 increases. Therefore, light emitting device 610 according to the present embodiment is similar to light emitting device 510 according to embodiment 6, and therefore produces the same effects.

[0091] Here, this angle is approximately proportional to the distance from center position 44C of lens region 44 to center position 71C of reflecting surface 71, so that the optical axes of all output light L3 can be converged to approximately one point. Furthermore, within main surface 21, the direction orthogonal to the direction perpendicular to reflecting surface 71 projected onto main surface 21 may be oriented toward center position 44C of lens region 44, and, as in the first embodiment, center position 43C of lens section 43 may be located on the line segment connecting the center position of output light L1 on reflecting surface 71 and center position 44C of lens region 44. This makes it possible to converge all output light L3 to one point.

[0092] Furthermore, in this embodiment, it is possible to use the same mirrors as the plurality of mirrors 70. This allows the configuration of the light emitting device 610 to be simplified.

[0093] Furthermore, in this embodiment, the direction of the emitted light L1 is the same for all of the semiconductor laser chips 60 (i.e., a direction parallel to the X-axis direction in FIG. 15). This allows the orientation of the semiconductor laser chips 60 to be unified, and therefore the semiconductor laser chips 60 can be aligned. This makes it easier to mount the semiconductor laser chips 60.

[0094] In this embodiment, the angle (45°) between the direction perpendicular to the reflecting surface 71 and the main surface 21 is the same for all of the plurality of mirrors 70. In this way, the same mirrors can be used for all of the plurality of mirrors 70, which simplifies the configuration of the light-emitting device 610.

[0095] 16, the four mirrors 70 whose positions in the Y-axis direction are equal to the center position 44C of the lens region 44 (the four mirrors 70 arranged in the third row from the top in FIG. 16) all have angles of 0° between the direction perpendicular to the reflecting surface 71 projected onto the main surface 21 and the line connecting the center position 71C of the reflecting surface 71 and the center position 44C of the lens region 44, and these angles do not increase as the distance from the center position 44C of the lens region 44 to the center position 71C of the reflecting surface 71 increases. Such a combination of output light L1 and mirrors 70 may be included in the light-emitting device 610.

[0096] (Embodiment 8) A light emitting device according to embodiment 8 will be described. The light emitting device according to this embodiment differs from light emitting device 510 according to embodiment 6 mainly in the configuration of the optical members and the configurations of the plurality of semiconductor laser chips 60 and the plurality of mirrors 70. The light emitting device according to this embodiment will be described below with reference to FIGS. 17 and 18, focusing on the differences from light emitting device 510 according to embodiment 6.

[0097] FIG. 17 is a plan view showing a state in which the optical member 40 of a light-emitting device 710 according to this embodiment has been removed. FIG. 17 shows a plan view of the main surface 21 of the base 20 in a plan view. In FIG. 17, the outlines of multiple lens portions 743 are also shown with dashed lines, and the optical axes of reflected light L2 from the mirror and output light L3 are also shown. FIG. 18 is a schematic cross-sectional view of the light-emitting device 710 according to this embodiment. FIG. 18 shows a cross-section taken along line XVIII-XVIII in FIG. 17. Note that FIG. 18 also shows a cross-section of an optical member 740. FIG. 18 also shows a schematic view of a semiconductor laser chip 60 and other components not present in the cross-section.

[0098] The light emitting device 710 according to the present embodiment includes a base 20, a frame member 30, an optical member 740, a plurality of semiconductor laser chips 60, a plurality of submounts 50, and a plurality of mirrors 70. The plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 have the same configurations as the plurality of semiconductor laser chips 60, the plurality of submounts 50, and the plurality of mirrors 70 according to the first embodiment, respectively, except for their arrangement.

[0099] 17 , the optical member 740 has a lens region 744 in which the lens portions 743 are arranged. The lens region 744 is, for example, a region surrounded by an envelope 744E of the lens portions 743. A center position 744C of the lens region 744 is the center of gravity of the lens region 744.

[0100] The lens portion 743 is an aspherical lens such as a parabolic lens. In this embodiment, as shown by the dashed-dotted line in FIG. 18 , the optical axis of the lens portion 743 is inclined with respect to the direction perpendicular to the main surface 21. The magnitude of this inclination angle increases as the distance from the center position 744C of the lens region 744 to the lens portion 743 increases. In other words, the angle between the direction of the optical axis of each of the plurality of lens portions 743 and the direction perpendicular to the main surface 21 increases as the distance from the center position 744C of the lens region 744 to the center position 743C of each of the plurality of lens portions 743 increases. As a result, the direction and position of the optical axis of the reflected light L2 incident on the lens portion 743 are approximately aligned with the direction and position of the optical axis of the lens portion 743, respectively, so that the output light L3 can be focused on the predetermined surface area A1. Furthermore, by bringing the position of the optical axis of the reflected light L2 closer to the position of the optical axis of the lens portion 743, it is possible to reduce coma aberration in the lens portion 743, thereby suppressing distortion of the profile of the output light L3 in the predetermined surface area A1. In other words, it is possible to reliably focus the output light L3 on the predetermined surface area A1.

[0101] The optical axis of each of the plurality of lens portions 743 may intersect with the predetermined surface area A1. This allows the direction and position of the optical axis of the reflected light L2 incident on the lens portion 743 to approximately coincide with the direction and position of the optical axis of the lens portion 743, thereby allowing the output light L3 to be focused on the predetermined surface area A1.

[0102] 17, in a plan view of the main surface 21, a point 743A, through which the optical axis of each of the plurality of lens portions 743 passes, may be located on the surface of each of the plurality of lens portions 743, on a line segment connecting a center position 744C of the lens region 744 and a center position C1 of the output light L1 on the reflecting surface 71 corresponding to each of the plurality of lens portions 743. This makes it possible to align the reflected light L2 from the reflecting surface 71 with the optical axis of the lens portion 743, thereby reducing the component of the reflected light L2 that deviates from the optical axis of the lens portion 743 and is lost.

[0103] Furthermore, the angle (angle θe shown in FIG. 18) formed between the direction of the optical axis of each of the plurality of lens portions 743 and the direction of the optical axis of the reflected light L2 incident on each of the plurality of lens portions 743 may increase as the distance from the center position 744C of the lens region 744 to the center position 743C of each of the plurality of lens portions 743 increases. This configuration has the same positional relationship as the reflected light L2 and the lens portions 43 in the fourth embodiment, and therefore has the same light-collecting effect. In this embodiment, the reflected light L2 and the output light L3 propagate in the same direction as shown in FIG. 18.

[0104] The profile of output light L3 in a predetermined surface area A1 of light-emitting device 710 according to the present embodiments 4, 5, 6, and 8 will be described with reference to Fig. 19. Fig. 19 is a diagram showing a far-field pattern obtained by superimposing the profiles of all output light L3 in the predetermined surface area A1 of light-emitting device 710 according to the present embodiment. In Fig. 19, the profile of each output light L3 is indicated by a dashed line.

[0105] 19, the far-field pattern obtained by superposing the profiles of all the output light L3 in the predetermined surface area A1 of the light-emitting device 710 according to this embodiment is circular. Note that the term "circular" here does not necessarily mean a perfect circle, but also includes a shape that is substantially circular. For example, even if the deviation of the outline of the far-field pattern from a circle is 10% or less, the shape of the far-field pattern is also included in the circular shape.

[0106] As shown in FIG. 19, the cross-sectional shape of the output light L3 has a long axis direction in the predetermined surface area A1. In FIG. 19, a portion of the long axis direction is indicated by a thick solid line. The long axis direction is uniformly distributed in all of the output light L3. In other words, the long axis direction is not biased in a particular direction in all of the output light L3. This makes it easier to uniformize the light intensity distribution in the predetermined surface area A1. Therefore, it is possible to generate irradiation light with little unevenness in the intensity distribution.

[0107] (Variations, etc.) Although the light emitting device according to the present disclosure has been described above based on the embodiments, the present disclosure is not limited to the above-described embodiments.

[0108] For example, in each of the above embodiments, each light emitting device includes a frame member 30, but the frame member 30 is not an essential component of each light emitting element. For example, each optical member of each light emitting device may have a portion corresponding to the frame member. Furthermore, each optical member may be supported on the base 20 by a member other than the frame member 30.

[0109] Furthermore, the submount 50 of each light-emitting device other than that of embodiment 2 is not an essential component. The semiconductor laser chip 60 may be directly mounted on the base 20. In this manner, the semiconductor laser chip 60 may be mounted on the main surface 21 of the base 20 directly or via the submount 50.

[0110] Furthermore, in each of the above embodiments, the plurality of semiconductor laser chips 60 all have the same configuration, but they may have different configurations.

[0111] Furthermore, in the light emitting device 310 according to the fourth embodiment, the direction perpendicular to the reflecting surface 71 projected onto the main surface 21 is not the same for all of the mirrors, but it may be the same. In this case, similar to the light emitting device 510 according to the sixth embodiment, by making the direction of the emitted light L1 different for each semiconductor laser chip 60, it is possible to adjust the direction of the optical axis of the reflected light L2 to be the same as the optical axis of the reflected light L2 according to the fourth embodiment. In this case, the direction perpendicular to the reflecting surface 71 of the multiple mirrors may also be adjusted as appropriate.

[0112] In addition, in each of the light-emitting devices of embodiments 1, 2, 3, and 7, by uniformly reducing the long axis direction of each output light by using a cylindrical lens, etc., a circular far-field pattern can be obtained, as with the light-emitting device 710 of embodiment 8.

[0113] This disclosure also includes forms obtained by applying various modifications to the above-mentioned embodiments that a person skilled in the art would conceive, and forms realized by arbitrarily combining the components and functions of the above-mentioned embodiments within the scope of the present disclosure. [Industrial Applicability]

[0114] The light emitting device of the present disclosure can be applied, for example, as a high-output, high-light-density light source for a projector. [Explanation of symbols]

[0115] 10, 110, 210, 310, 410, 510, 610, 710 Light-emitting devices 20 Foundation 21 Main surface 30 Frame members 40, 740 Optical components 43, 743 Lens part 43C, 44C, 71C, 743C, 744C, C1 center position 44,744 Lens area 44E, 744E envelope 50, 53a, 53b, 53c, 53d, 54a, 54b, 54c, 54d, 55a, 55b, 55c, 55d, 56a, 56b, 56c, 56d, 57a, 57b, 57c, 57d Submount 51 Mounting surface 52 Mounting surface 60 Semiconductor laser chip 70, 73a, 73b, 73c, 73d, 74a, 74b, 74c, 74d, 75a, 75b, 75c, 75d, 76a, 76b, 76c, 76d, 77a, 77b, 77c, 77d, 373a, 373b, 373c, 373d, 374a, 374b, 374c, 374d, 375a, 375b, 375c, 375d, 376a, 376b, 376c, 376d, 377a, 377b, 377c, 377d, 470 mirror 71 Reflective surface 83a, 83b, 83c, 83d, 84a, 84b, 84c, 84d, 85a, 85b, 85c, 85d, 86a, 86b, 86c, 86d, 87a, 87b, 87c, 87d Support part A1 Specified surface area E1 Emission point L1 output light L2 reflected light L3 output light

Claims

1. a base having a main surface; a plurality of semiconductor laser chips mounted on the main surface and having optical axes parallel to the main surface; a plurality of mirrors, each having a reflecting surface that reflects light emitted from each of the emission points of the plurality of semiconductor laser chips; an optical member having a plurality of lens portions each receiving reflected light from the reflective surfaces of the plurality of mirrors; When a distance from a center position of the emitted light on the reflecting surface to a center position of a lens portion of the plurality of lens portions corresponding to the reflecting surface is defined as a first distance in a plan view of the main surface, the first distance to a lens portion of the plurality of lens portions that is closest to a center position of the lens region in which the plurality of lens portions are arranged is greater than the first distance to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region in which the plurality of lens portions are arranged; The output light from each of the plurality of lens portions is irradiated onto the inside of a predetermined surface area having an area smaller than that of the lens area, When an angle formed between the direction of the optical axis of the reflected light and a direction perpendicular to the main surface is defined as a first angle, The first angle with respect to the reflected light corresponding to a lens portion of the plurality of lens portions that is closest to a center position of the lens region is larger than the first angle with respect to the reflected light corresponding to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region. Light-emitting device.

2. The first angle increases as the distance from the center position of the lens area to the center position of the lens portion that receives the reflected light among the plurality of lens portions increases. The light emitting device according to claim 1 .

3. When the absolute value of the difference between the angle formed by the direction perpendicular to the main surface and the direction perpendicular to the reflecting surface and the average value of the formed angle for the plurality of mirrors is defined as a third difference, The third difference with respect to the reflecting surface corresponding to the lens portion of the plurality of lens portions that is closest to the center position of the lens region is greater than the third difference with respect to the reflecting surface corresponding to the lens portion of the plurality of lens portions that is located at the outermost position of the lens region. The light-emitting device according to claim 1 or 2.

4. The third difference increases as the distance from the center position of the lens region to the center position of the lens portion corresponding to the reflective surface among the plurality of lens portions increases. The light emitting device according to claim 3 .

5. The direction perpendicular to the reflecting surface projected onto the main surface is the same for all of the mirrors. The light emitting device according to claim 3 or 4.

6. The angle formed by the direction perpendicular to the reflecting surface projected onto the main surface and the incident direction of the emitted light onto the reflecting surface is the same for all of the plurality of mirrors. The light emitting device according to claim 3 or 4.

7. further comprising a plurality of support portions disposed on the main surface; The plurality of mirrors are respectively supported on a plurality of supports. The light emitting device according to claim 3 or 4.

8. a base having a main surface; a plurality of semiconductor laser chips mounted on the main surface and having optical axes parallel to the main surface; a plurality of mirrors, each having a reflecting surface that reflects light emitted from each of the emission points of the plurality of semiconductor laser chips; an optical member having a plurality of lens portions each receiving reflected light from the reflective surfaces of the plurality of mirrors; When a distance from a center position of the emitted light on the reflecting surface to a center position of a lens portion of the plurality of lens portions corresponding to the reflecting surface is defined as a first distance in a plan view of the main surface, the first distance to a lens portion of the plurality of lens portions that is closest to a center position of the lens region in which the plurality of lens portions are arranged is greater than the first distance to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region in which the plurality of lens portions are arranged, The output light from each of the plurality of lens portions is irradiated onto the inside of a predetermined surface area having an area smaller than that of the lens area, When the angle between the direction perpendicular to the reflecting surface and the direction of the emitted light projected onto the main surface is defined as a second angle, The second angle with respect to the reflecting surface corresponding to a lens portion of the plurality of lens portions that is closest to a center position of the lens region is larger than the second angle with respect to the reflecting surface corresponding to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region. Light-emitting device.

9. The second angle increases as the distance from the center position of the lens region to the center position of the lens portion corresponding to the reflective surface among the plurality of lens portions increases. The light emitting device according to claim 8 .

10. The direction perpendicular to the reflecting surface projected onto the main surface is the same for all of the mirrors.

10. The light emitting device according to claim 8 or 9.

11. The angle of the direction perpendicular to the reflecting surface with respect to the principal surface is the same for all of the plurality of mirrors.

10. The light emitting device according to claim 8 or 9.

12. a base having a main surface; a plurality of semiconductor laser chips mounted on the main surface and having optical axes parallel to the main surface; a plurality of mirrors, each having a reflecting surface that reflects light emitted from each of the emission points of the plurality of semiconductor laser chips; an optical member having a plurality of lens portions each receiving reflected light from the reflective surfaces of the plurality of mirrors; When a distance from a center position of the emitted light on the reflecting surface to a center position of a lens portion of the plurality of lens portions corresponding to the reflecting surface is defined as a first distance in a plan view of the main surface, the first distance to a lens portion of the plurality of lens portions that is closest to a center position of the lens region in which the plurality of lens portions are arranged is greater than the first distance to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region in which the plurality of lens portions are arranged; The output light from each of the plurality of lens portions is irradiated onto the inside of a predetermined surface area having an area smaller than that of the lens area, When the angle formed between the direction of the optical axis of each of the plurality of lens portions and the direction perpendicular to the main surface is defined as a third angle, The third angle of the lens portion located at the outermost position of the lens region among the plurality of lens portions is larger than the third angle of the lens portion located closest to the center position of the lens region among the plurality of lens portions. Light-emitting device.

13. The third angle increases as the distance from the center position of the lens area to the center position of each of the plurality of lens portions increases. The light emitting device according to claim 12.

14. When an angle formed between the direction of the optical axis of each of the plurality of lens portions and the direction of the optical axis of the reflected light incident on each of the plurality of lens portions is defined as a fourth angle, The fourth angle of the lens portion of the plurality of lens portions that is located at the outermost position of the lens region is larger than the fourth angle of the lens portion of the plurality of lens portions that is closest to the center position of the lens region.

14. The light emitting device according to claim 12 or 13.

15. The fourth angle increases as the distance from the center position of the lens area to the center position of each of the plurality of lens portions increases.

15. The light emitting device according to claim 14.

16. The optical axis of each of the plurality of lens portions intersects with the predetermined surface area.

14. The light emitting device according to claim 12 or 13.

17. In a plan view of the main surface, a point on the surface of each of the plurality of lens portions, through which the optical axis of each of the plurality of lens portions passes, is located on a line segment connecting a center position of the lens region and a center position of the emitted light on the reflecting surface corresponding to each of the plurality of lens portions.

14. The light emitting device according to claim 12 or 13.

18. a base having a main surface; a plurality of semiconductor laser chips mounted on the main surface and having optical axes parallel to the main surface; a plurality of mirrors, each having a reflecting surface that reflects light emitted from each of the emission points of the plurality of semiconductor laser chips; an optical member having a plurality of lens portions each receiving reflected light from the reflective surfaces of the plurality of mirrors; When a distance from a center position of the emitted light on the reflecting surface to a center position of a lens portion of the plurality of lens portions corresponding to the reflecting surface is defined as a first distance in a plan view of the main surface, the first distance to a lens portion of the plurality of lens portions that is closest to a center position of the lens region in which the plurality of lens portions are arranged is greater than the first distance to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region in which the plurality of lens portions are arranged; The output light from each of the plurality of lens portions is irradiated onto the inside of a predetermined surface area smaller than the area of ​​the lens area. when an absolute value of a difference between a height from the principal surface to the emission point of each of the plurality of semiconductor laser chips and an average value of a height from the principal surface to the emission point of each of the plurality of semiconductor laser chips is defined as a first difference, The first difference with respect to the emission point corresponding to a lens portion of the plurality of lens portions that is closest to a center position of the lens region is greater than the first difference with respect to the emission point corresponding to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region. Light-emitting device.

19. The first difference increases as the distance from the center position of the lens region to the center position of the lens portion corresponding to the emission point among the plurality of lens portions increases.

19. The light emitting device of claim 18.

20. a base having a main surface; a plurality of semiconductor laser chips mounted on the main surface and having optical axes parallel to the main surface; a plurality of mirrors, each having a reflecting surface that reflects light emitted from each of the emission points of the plurality of semiconductor laser chips; an optical member having a plurality of lens portions each receiving reflected light from the reflective surfaces of the plurality of mirrors; When a distance from a center position of the emitted light on the reflecting surface to a center position of a lens portion of the plurality of lens portions corresponding to the reflecting surface is defined as a first distance in a plan view of the main surface, the first distance to a lens portion of the plurality of lens portions that is closest to a center position of the lens region in which the plurality of lens portions are arranged is greater than the first distance to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region in which the plurality of lens portions are arranged; The output light from each of the plurality of lens portions is irradiated onto the inside of a predetermined surface area having an area smaller than that of the lens area, When an absolute value of a difference between a height from the main surface to a center position of the reflecting surface and an average value of heights from the main surface to the center positions of the reflecting surfaces for the plurality of mirrors is defined as a second difference, The second difference with respect to the reflecting surface corresponding to the lens portion of the plurality of lens portions that is closest to the center position of the lens region is larger than the second difference with respect to the reflecting surface corresponding to the lens portion of the plurality of lens portions that is located at the outermost position of the lens region. Light-emitting device.

21. The second difference increases as the distance from the center position of the lens region to the center position of a lens portion among the plurality of lens portions corresponding to each of the plurality of mirrors increases.

21. The light emitting device according to claim 20.

22. In a plan view of the main surface, a center position of each of the plurality of lens portions coincides with a center position of the reflecting surface corresponding to each of the plurality of lens portions. The light emitting device according to any one of claims 18 to 21.

23. The first distance increases as the distance from the center position of the emitted light to the center position of the lens area increases. The light emitting device according to any one of claims 1 to 22.

24. The output light is a focused beam The light emitting device according to any one of claims 1 to 23.

25. When the distance from the center position of the reflecting surface to the center position of a lens portion among the plurality of lens portions corresponding to the reflecting surface in a plan view of the main surface is defined as a second distance, The second distance to a lens portion of the plurality of lens portions that is closest to a center position of the lens region is greater than the second distance to a lens portion of the plurality of lens portions that is located at the outermost position of the lens region. The light emitting device according to any one of claims 1 to 24.

26. The second distance increases as the distance from the center position of the reflecting surface to the center position of the lens area increases.

26. The light emitting device of claim 25.

27. The far-field pattern obtained by superimposing all of the output light in the predetermined surface area is circular. The light emitting device according to any one of claims 1 to 26.

28. The cross-sectional shape of the output light has a major axis in the predetermined surface area, and the major axis is Evenly distributed across all of the output light 28. The light emitting device of claim 27.

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