Copper-clad laminate and method for forming same

Abstract

The present disclosure relates to a copper clad laminate that can include a copper foil layer and a dielectric coating covering the copper foil layer. The dielectric coating can include a resin matrix component and a ceramic filler component. The ceramic filler component can include a first filler material. The dielectric coating can have an average thickness of about 20 microns or less.

Description

[Technical Field]

[0001] TECHNICAL FIELD This disclosure relates to copper clad laminates and methods of forming same. In particular, this disclosure relates to copper clad laminates having a dielectric coating and methods of forming same. [Background technology]

[0002] Copper-clad laminates (CCLs) contain a dielectric material laminated on or between two layers of conductive copper foil. Subsequent processing converts such CCLs into printed circuit boards (PCBs). When used to form PCBs, the conductive copper foil is selectively etched to form circuits with through-holes drilled between the layers and metallized, i.e., plated, to establish electrical conductivity between layers in multilayer PCBs. Therefore, CCLs must exhibit excellent thermomechanical stability. PCBs are also routinely exposed to excessively high temperatures not only during use but also during manufacturing operations such as soldering. Therefore, they must function at continuous temperatures exceeding 200°C without deformation and must withstand dramatic temperature fluctuations while resisting moisture absorption. The dielectric layers of CCLs act as spacers between conductive layers, minimizing electrical signal loss and crosstalk by blocking electrical conductivity. The lower the dielectric constant (absolute permittivity) of the dielectric layer, the higher the electrical signal velocity through the layer. Therefore, a low dielectric loss tangent, which depends not only on the polarizability of the material but also on temperature and frequency, is crucial for high-frequency applications. Therefore, improved dielectric materials and layers that can be used in PCB and other high frequency applications are desired. Summary of the Invention

[0003] According to a first aspect, a copper clad laminate may include a copper foil layer and a dielectric coating covering the copper foil layer. The dielectric coating may include a resin matrix component and a ceramic filler component. The ceramic filler component may include a first filler material. The dielectric coating may have an average thickness of about 20 microns or less.

[0004] According to another embodiment, a copper clad laminate may include a copper foil layer and a dielectric coating covering the copper foil layer. The dielectric coating may include a resin matrix component and a ceramic filler component. The ceramic filler component may include a first filler material having a particle size distribution of at least about 0.2 microns and a D of not more than about 1.6. 10 , D of at least about 0.5 microns and not more than about 2.7 microns 50 and D of at least about 0.8 microns and not more than about 4.7 microns 90 may have:

[0005] According to yet another aspect, a copper clad laminate may include a copper foil layer and a dielectric coating covering the copper foil layer. The dielectric coating may include a resin matrix component and a ceramic filler component. The ceramic filler component may include a first filler material. The first filler material may further have an average particle size of about 5 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 Equivalent to particle size distribution measurement.

[0006] According to another embodiment, a printed circuit board may include a copper clad laminate. The copper clad laminate may include a copper foil layer and a dielectric coating covering the copper foil layer. The dielectric coating may include a resin matrix component and a ceramic filler component. The ceramic filler component may include a first filler material. The dielectric coating may have an average thickness of about 20 microns or less.

[0007] According to yet another embodiment, a printed circuit board may include a copper clad laminate. The copper clad laminate may include a copper foil layer and a dielectric coating covering the copper foil layer. The dielectric coating may include a resin matrix component and a ceramic filler component. The ceramic filler component may include a first filler material. The first filler material may have a particle size distribution of at least about 0.2 microns and a D of no greater than about 1.6. 10 , D of at least about 0.5 microns and not more than about 2.7 microns 50 and D of at least about 0.8 microns and not more than about 4.7 microns 90 may have:

[0008] According to another aspect, a printed circuit board may include a copper clad laminate. The copper clad laminate may include a copper foil layer and a dielectric coating covering the copper foil layer. The dielectric coating may include a resin matrix component and a ceramic filler component. The ceramic filler component may include a first filler material. The first filler material may further have an average particle size of about 5 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 Equivalent to particle size distribution measurement.

[0009] According to another embodiment, a method for forming a copper clad laminate can include providing a copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric coating overlying the copper foil. The ceramic filler precursor component can include a first filler precursor material. The dielectric coating can have an average thickness of about 20 microns or less.

[0010] According to yet another aspect, a method of forming a copper clad laminate can include providing a copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric coating over the copper foil. The ceramic filler precursor component can include a first filler precursor material. The first filler material can have a particle size distribution of at least about 0.2 microns and a D of no more than about 1.6. 10 , D of at least about 0.5 microns and not more than about 2.7 microns 50 and D of at least about 0.8 microns and not more than about 4.7 microns 90 may have:

[0011] According to another aspect, a method of forming a copper clad laminate can include providing a copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric coating overlying the copper foil. The ceramic filler precursor component can include a first filler precursor material. The first filler precursor material can further have an average particle size of about 5 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurement.

[0012] According to another aspect, a method for forming a printed circuit board can include providing a copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric coating overlying the copper foil. The ceramic filler precursor component can include a first filler precursor material. The dielectric coating can have an average thickness of about 20 microns or less.

[0013] According to yet another aspect, a method of forming a printed circuit board can include providing a copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric coating over the copper foil. The ceramic filler precursor component can include a first filler precursor material. The first filler material can have a particle size distribution of at least about 0.2 microns and a D of no more than about 1.6. 10 , D of at least about 0.5 microns and not more than about 2.7 microns 50 and D of at least about 0.8 microns and not more than about 4.7 microns 90 may have:

[0014] According to another aspect, a method of forming a printed circuit board can include providing a copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric coating overlying the copper foil. The ceramic filler precursor component can include a first filler precursor material. The first filler precursor material can further have an average particle size of about 5 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS having a (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurement. [Brief explanation of the drawings]

[0015] Embodiments are illustrated by way of example and not limitation in the accompanying figures. [Figure 1] 1 includes diagrams illustrating a method of forming a copper clad laminate according to embodiments described herein. [Figure 2]1 includes diagrams showing the configuration of copper clad laminates formed in accordance with embodiments described herein. [Figure 3] 1 includes diagrams illustrating a method of forming a printed circuit board according to embodiments described herein. [Figure 4] 1 includes diagrams showing the configuration of a printed circuit board formed in accordance with embodiments described herein.

[0016] Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. DETAILED DESCRIPTION OF THE INVENTION

[0017] The following description focuses on specific implementations and embodiments of the teachings. The detailed description is provided to help explain the specific embodiments and should not be construed as a limitation on the scope or applicability of the disclosure or teachings. It will be understood that other embodiments may be used based on the disclosure and teachings provided herein.

[0018] The terms "comprises," "comprising," "includes," "including," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a method, article, or apparatus that includes a list of features is not necessarily limited to those features, but may include other features not expressly listed or that are inherent to such method, article, or apparatus. Further, unless stated to the contrary, "or" refers to an inclusive or, not an exclusive or. For example, condition A or B can be satisfied by any one of the following: A is true (or present) and B is false (or absent), A is false (or absent) and B is true (or present), and both A and B are true (or present).

[0019] The embodiments described herein are generally directed to copper clad laminates that may include a copper foil layer and a dielectric coating overlying the copper foil layer. According to certain embodiments, the dielectric coating may include a resin matrix component and a ceramic filler component.

[0020] Referring first to methods of forming a copper clad laminate, Figure 1 includes a diagram illustrating a forming method 100 for forming a copper clad laminate according to embodiments described herein. According to certain embodiments, the forming method 100 may include a first step 110 of providing a copper foil layer, a second step 120 of combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and a third step 130 of forming the forming mixture into a dielectric coating over the copper foil layer to form the copper clad laminate.

[0021] According to certain embodiments, the ceramic filler precursor component may include a first filler precursor material that may have particular properties that may improve the performance of the copper clad laminate formed by the forming method 100.

[0022] According to certain embodiments, the first filler precursor material may have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler precursor material, is referred to as a particle size distribution D value D 10 , D 50 , and D 90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and 90% of the particles are larger. 50 The D value is defined as the particle size value for which 50% of the particles are smaller than that value and 50% of the particles are larger than that value. 90 A value is defined as the particle size value at which 90% of the particles are smaller than that value and 10% of the particles are larger than that value. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0023] According to certain embodiments, the first filler precursor material has a particular size distribution D 10 For example, the D of the first filler precursor material 10 can be at least about 0.2 microns, e.g., at least about 0.3 microns, or at least about 0.4 microns, or at least about 0.5 microns, or at least about 0.6 microns, or at least about 0.7 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or even at least about 1.2 microns. According to yet other embodiments, the D of the first filler material 10 can be about 1.6 microns or less, such as about 1.5 microns or less, or even about 1.4 microns or less. 10 It will be understood that D of the first filler precursor material can be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0024] According to another embodiment, the first filler precursor material has a particular size distribution D 50 For example, the D of the first filler precursor material 50 can be at least about 0.5 microns, e.g., at least about 0.6 microns, or at least about 0.7 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns, or at least about 1.3 microns, or at least about 1.4 microns, or at least about 1.5 microns, or at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or even at least about 2.2 microns. According to yet other embodiments, the D of the first filler material 50The D of the first filler precursor material can be about 2.7 microns or less, such as about 2.6 microns or less, or about 2.5 microns or less, or even about 2.4 microns or less. 50 It will be understood that D of the first filler precursor material can be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0025] According to another embodiment, the first filler precursor material has a particular size distribution D 90 For example, the D of the first filler precursor material 90 can be at least about 0.8 microns, e.g., at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns, or at least about 1.3 microns, or at least about 1.4 microns, or at least about 1.5 microns, or at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns, or at least about 2.3 microns, or at least about 2.4 microns, or at least about 2.5 microns, or at least about 2.6 microns, or even at least about 2.7 microns. According to yet other embodiments, the D of the first filler material 90 can be about 8.0 microns or less, for example, about 7.5 microns or less, or about 7.0 microns or less, or about 6.5 microns or less, or about 6.0 microns or less, or about 5.5 microns or less, or about 5.4 microns or less, or about 5.3 microns or less, or about 5.2 microns or less, or even about 5.1 microns or less. 90 It will be understood that D of the first filler precursor material can be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0026] According to yet other embodiments, the first filler precursor material can have a specific average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the first filler precursor material can be about 10 microns or less, such as about 9 microns or less, or about 8 microns or less, or about 7 microns or less, or about 6 microns or less, or about 5 microns or less, or about 4 microns or less, or about 3 microns or less, or even about 2 microns or less. It will be understood that the average particle size of the first filler precursor material can be any value between and including any of the above values. It will further be understood that the average particle size of the first filler precursor material can be within a range between and including any of the above values.

[0027] According to yet another embodiment, the first filler precursor material may be described as having a particular particle size distribution span (PSDS), the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 This is equivalent to a particle size distribution measurement. For example, the PSDS of the first filler precursor material can be about 5 or less, e.g., about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the first filler precursor material can be any value between and including any of the above values. It will further be understood that the PSDS of the first filler precursor material can be within a range between and including any of the above values.

[0028] According to yet other embodiments, the first filler precursor material may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the first filler precursor material may have an average surface area of ​​about 10 m 2 / g or less, for example, about 9.9m 2 / g or less, or about 9.5m 2 / g or less, or about 9.0m 2 / g or less, or about 8.5m 2 / g or less, or about 8.0m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 According to yet another embodiment, the first filler precursor material may have an average surface area of ​​at least about 1.2 m 2 / g, e.g., at least about 2.2 m 2 / g。 It will be understood that the average surface area of ​​the first filler precursor material can be any value between and including any of the minimum and maximum values ​​above. It will be further understood that the average surface area of ​​the first filler precursor material can be within a range between and including any of the minimum and maximum values ​​above.

[0029] According to other embodiments, the first filler precursor material may include a specific material. According to certain embodiments, the first filler precursor material may include a silica-based compound. According to still other embodiments, the first filler precursor material may consist of a silica-based compound. According to other embodiments, the first filler precursor material may include silica. According to still other embodiments, the first filler precursor material may consist of silica.

[0030] According to yet other embodiments, the forming mixture can include a particular content of ceramic filler precursor component. For example, the content of ceramic filler precursor component can be at least about 30 vol%, e.g., at least about 31 vol%, or at least about 32 vol%, or at least about 33 vol%, or at least about 34 vol%, or at least about 35 vol%, or at least about 36 vol%, or at least about 37 vol%, or at least about 38 vol%, or at least about 39 vol%, or at least about 40 vol%, or at least about 41 vol%, or at least about 42 vol%, or at least about 43 vol%, or at least about 44 vol%, or at least about 45 vol%, or at least about 46 vol%, or at least about 47 vol%, or at least about 48 vol%, or at least about 49 vol%, or at least about 50 vol%, or at least about 51 vol%, or at least about 52 vol%, or at least about 53 vol%, or even at least about 54 vol%, based on the total volume of the first forming mixture. According to yet other embodiments, the content of the ceramic filler precursor component can be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the forming mixture. It will be understood that the content of the ceramic filler precursor component can be any value between and including any of the minimum and maximum values ​​recited above. It will further be understood that the content of the ceramic filler precursor component can be within a range between and including any of the minimum and maximum values ​​recited above.

[0031] According to yet other embodiments, the ceramic filler precursor component may include a specific content of the first filler precursor material. For example, the content of the first filler precursor material may be at least about 80 volume %, e.g., at least about 81 volume %, or at least about 82 volume %, or at least about 83 volume %, or at least about 84 volume %, or at least about 85 volume %, or at least about 86 volume %, or at least about 87 volume %, or at least about 88 volume %, or at least about 89 volume %, or even at least about 90 volume %, based on the total volume of the ceramic filler precursor component. According to yet other embodiments, the content of the first filler precursor material may be about 100 volume % or less, e.g., about 99 volume % or less, or about 98 volume % or less, or about 97 volume % or less, or about 96 volume % or less, or about 95 volume % or less, or about 94 volume % or less, or about 93 volume % or less, or even about 92 volume % or less, based on the total volume of the ceramic filler precursor component. It will be understood that the content of the first filler precursor material can be any value between and including any of the minimum and maximum values ​​noted above. It will further be understood that the content of the first filler precursor material can be within a range between and including any of the minimum and maximum values ​​noted above.

[0032] According to yet other embodiments, the ceramic filler precursor component may include a second filler precursor material.

[0033] According to other embodiments, the second filler precursor material can include certain materials. For example, the second filler precursor material can include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the second filler precursor material can include any high dielectric constant ceramic material, such as TiO, SrTiO, ZrTiO, MgTiO, CaTiO, BaTiO, or any combination thereof.

[0034] According to yet another embodiment, the second filler precursor material can include TiO2. According to yet another embodiment, the second filler precursor material can consist of TiO2.

[0035] According to yet other embodiments, the ceramic filler precursor component may include a specific content of the second filler precursor material. For example, the content of the second filler precursor material may be at least about 1 vol. %, e.g., at least about 2 vol. %, or at least about 3 vol. %, or at least about 4 vol. %, or at least about 5 vol. %, or at least about 6 vol. %, or at least about 7 vol. %, or at least about 8 vol. %, or at least about 9 vol. %, or at least about 10 vol. % relative to the total volume of the ceramic filler precursor component. According to yet other embodiments, the content of the second filler precursor material may be about 20 vol. % or less, e.g., about 19 vol. % or less, or about 18 vol. % or less, or about 17 vol. % or less, or about 16 vol. % or less, or about 15 vol. % or less, or about 14 vol. % or less, or about 13 vol. % or less, or about 12 vol. % or less relative to the total volume of the ceramic filler precursor component. It will be understood that the content of the second filler precursor material may be any value between and including any of the minimum and maximum values ​​recited above. It will be further understood that the content of the second filler precursor material can be within a range between and including any of the minimum and maximum values ​​set forth above.

[0036] According to yet other embodiments, the ceramic filler precursor component can include a specific content of amorphous material. For example, the ceramic filler precursor component can include at least about 97%, such as at least about 98%, or even at least about 99%, amorphous material. It will be understood that the content of amorphous material can be any value between and including any of the above values. It will further be understood that the content of amorphous material can be within a range between and including any of the above values.

[0037] According to other embodiments, the resin matrix precursor component can include specific materials. For example, the resin matrix precursor component can include a perfluoropolymer. According to yet other embodiments, the resin matrix precursor component can consist of a perfluoropolymer.

[0038] According to yet another embodiment, the perfluoropolymer of the resin matrix precursor component can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to another embodiment, the perfluoropolymer of the resin matrix precursor component can consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0039] According to yet other embodiments, the perfluoropolymer of the resin matrix precursor component may comprise polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet other embodiments, the perfluoropolymer of the resin matrix precursor component may comprise polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0040] According to yet other embodiments, the forming mixture can include a specific content of the resin matrix precursor component. For example, the content of the resin matrix precursor component can be at least about 45% by volume, e.g., at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the forming mixture. According to still other embodiments, the content of the resin matrix precursor component can be no more than about 63% by volume, or no more than about 62% by volume, or no more than about 61% by volume, or no more than about 60% by volume, or no more than about 59% by volume, or no more than about 58% by volume, or even no more than about 57% by volume, based on the total volume of the forming mixture. It will be understood that the content of the resin matrix precursor component can be any value between and including any of the minimum and maximum values ​​recited above. It will further be understood that the content of the resin matrix precursor component can be within a range between and including any of the minimum and maximum values ​​recited above.

[0041] According to yet other embodiments, the forming mixture may contain a specific content of perfluoropolymer. For example, the perfluoropolymer content may be at least about 45% by volume, e.g., at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the forming mixture. According to yet other embodiments, the perfluoropolymer content may be about 63% by volume or less, e.g., about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the forming mixture. It will be understood that the perfluoropolymer content may be any value between and including any of the above minimum and maximum values. It will be further understood that the perfluoropolymer content can be within a range between and including any of the minimum and maximum values ​​recited above.

[0042] Turning now to embodiments of copper clad laminates formed according to forming method 100, Figure 2 includes a diagram of copper clad laminate 200. As shown in Figure 2, copper clad laminate 200 may include a copper foil layer 202 and a dielectric coating 205 covering the surface of copper foil layer 202. According to certain embodiments, dielectric coating 205 may include a resin matrix component 210 and a ceramic filler component 220.

[0043] According to certain embodiments, the ceramic filler component 220 may include a first filler material that may have particular properties that may improve the performance of the copper clad laminate 200 .

[0044] According to certain embodiments, the first filler material of the ceramic filler component 220 may have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler material, is referred to as a particle size distribution D value D 10 , D 50 , and D90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and 90% of the particles are larger. 50 The D value is defined as the particle size value for which 50% of the particles are smaller than that value and 50% of the particles are larger than that value. 90 A value is defined as the particle size value at which 90% of the particles are smaller than that value and 10% of the particles are larger than that value. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0045] According to certain embodiments, the first filler material of the ceramic filler component 220 has a particular diameter distribution D 10 For example, the D of the first filler material 10 can be at least about 0.2 microns, e.g., at least about 0.3 microns, or at least about 0.4 microns, or at least about 0.5 microns, or at least about 0.6 microns, or at least about 0.7 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or even at least about 1.2 microns. According to yet other embodiments, the D of the first filler material 10 can be about 1.6 microns or less, such as about 1.5 microns or less, or even about 1.4 microns or less. 10 It will be understood that D of the first filler material can be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0046] According to another embodiment, the first filler material of the ceramic filler component 420 has a particular size distribution D 50 For example, the D of the first filler material 50can be at least about 0.5 microns, e.g., at least about 0.6 microns, or at least about 0.7 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns, or at least about 1.3 microns, or at least about 1.4 microns, or at least about 1.5 microns, or at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or even at least about 2.2 microns. According to yet other embodiments, the D of the first filler material 50 can be about 2.7 microns or less, such as about 2.6 microns or less, or about 2.5 microns or less, or even about 2.4 microns or less. 50 It will be understood that D of the first filler material can be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0047] According to another embodiment, the first filler material of the ceramic filler component 420 has a particular size distribution D 90 For example, the D of the first filler material 90can be at least about 0.8 microns, e.g., at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns, or at least about 1.3 microns, or at least about 1.4 microns, or at least about 1.5 microns, or at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns, or at least about 2.3 microns, or at least about 2.4 microns, or at least about 2.5 microns, or at least about 2.6 microns, or even at least about 2.7 microns. According to yet other embodiments, the D of the first filler material 90 can be about 8.0 microns or less, for example, about 7.5 microns or less, or about 7.0 microns or less, or about 6.5 microns or less, or about 6.0 microns or less, or about 5.5 microns or less, or about 5.4 microns or less, or about 5.3 microns or less, or about 5.2 microns or less, or even about 5.1 microns or less. 90 It will be understood that D of the first filler material can be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0048] According to yet other embodiments, the first filler material of the ceramic filler component 220 can have a particular average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the first filler material can be about 10 microns or less, e.g., about 9 microns or less, or about 8 microns or less, or about 7 microns or less, or about 6 microns or less, or about 5 microns or less, or about 4 microns or less, or about 3 microns or less, or even about 2 microns or less. It will be understood that the average particle size of the first filler material can be any value between and including any of the above values. It will further be understood that the average particle size of the first filler material can be within a range between and including any of the above values.

[0049] According to yet another embodiment, the first filler material of the ceramic filler component 220 may be described as having a particular particle size distribution span (PSDS), where the PSDS is (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 This is equivalent to a particle size distribution measurement. For example, the PSDS of the first filler material can be about 5 or less, e.g., about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the first filler material can be any value between and including any of the above values. It will further be understood that the PSDS of the first filler material can be within a range between and including any of the above values.

[0050] According to yet other embodiments, the first filler material of the ceramic filler component 220 may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the first filler material may have an average surface area of ​​about 10 m2 / g or less, for example, about 9.9m 2 / g or less, or about 9.5m 2 / g or less, or about 9.0m 2 / g or less, or about 8.5m 2 / g or less, or about 8.0m 2 / gm 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 According to yet another embodiment, the first filler material may have an average surface area of ​​at least about 1.2 m 2 / g, e.g., at least about 2.2 m 2 / g。 It will be understood that the average surface area of ​​the first filler material can be any value between and including any of the minimum and maximum values ​​above. It will be further understood that the average surface area of ​​the first filler material can be within a range between and including any of the minimum and maximum values ​​above.

[0051] According to other embodiments, the first filler material of the ceramic filler component 220 can include a particular material. According to certain embodiments, the first filler material can include a silica-based compound. According to yet other embodiments, the first filler material can consist of a silica-based compound. According to other embodiments, the first filler material can include silica. According to yet other embodiments, the first filler material can consist of silica.

[0052] According to yet another embodiment, the dielectric coating 205 may include a particular content of a ceramic filler component 220 . For example, the content of the ceramic filler component 220 can be at least about 30% by volume, e.g., at least about 31% by volume, or at least about 32% by volume, or at least about 33% by volume, or at least about 34% by volume, or at least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume, or at least about 40% by volume, or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume, or at least about 44% by volume, or at least about 45% by volume, or at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or even at least about 54% by volume, relative to the total volume of the dielectric coating 205. According to yet other embodiments, the content of ceramic filler component 420 can be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of dielectric coating 400. It will be understood that the content of ceramic filler component 220 can be any value between and including any of the minimum and maximum values ​​recited above. It will further be understood that the content of ceramic filler component 220 can be within a range between and including any of the minimum and maximum values ​​recited above.

[0053] According to yet other embodiments, the ceramic filler component 220 may include a specific content of the first filler material. For example, the content of the first filler material may be at least about 80 vol%, e.g., at least about 81 vol%, or at least about 82 vol%, or at least about 83 vol%, or at least about 84 vol%, or at least about 85 vol%, or at least about 86 vol%, or at least about 87 vol%, or at least about 88 vol%, or at least about 89 vol%, or even at least about 90 vol%, based on the total volume of the ceramic filler component 220. According to yet other embodiments, the content of the first filler material may be about 100 vol% or less, e.g., about 99 vol% or less, or about 98 vol% or less, or about 97 vol% or less, or about 96 vol% or less, or about 95 vol% or less, or about 94 vol% or less, or about 93 vol% or less, or even about 92 vol% or less, based on the total volume of the ceramic filler component 220. It will be appreciated that the content of the first filler material can be any value between and including any of the minimum and maximum values ​​noted above. It will further be appreciated that the content of the first filler material can be within a range between and including any of the minimum and maximum values ​​noted above.

[0054] According to yet other embodiments, the ceramic filler component 220 can include a second filler material.

[0055] According to yet other embodiments, the second filler material of the ceramic filler component 220 can include certain materials. For example, the second filler material can include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the second filler material of the ceramic filler component 220 can include any high dielectric constant ceramic material, such as TiO, SrTiO, ZrTiO, MgTiO, CaTiO, BaTiO, or any combination thereof.

[0056] According to yet another embodiment, the second filler material of the ceramic filler component 220 can include TiO2. According to yet another embodiment, the second filler material can consist of TiO2.

[0057] According to yet other embodiments, the ceramic filler component 220 may include a specific content of the second filler material. For example, the content of the second filler material may be at least about 1 vol. %, e.g., at least about 2 vol. %, or at least about 3 vol. %, or at least about 4 vol. %, or at least about 5 vol. %, or at least about 6 vol. %, or at least about 7 vol. %, or at least about 8 vol. %, or at least about 9 vol. %, or at least about 10 vol. % relative to the total volume of the ceramic filler component 220. According to yet other embodiments, the content of the second filler material may be about 20 vol. % or less, e.g., about 19 vol. % or less, or about 18 vol. % or less, or about 17 vol. % or less, or about 16 vol. % or less, or about 15 vol. % or less, or about 14 vol. % or less, or about 13 vol. % or less, or about 12 vol. % or less relative to the total volume of the ceramic filler component 220. It will be understood that the content of the second filler material may be any value between and including any of the minimum and maximum values ​​recited above. It will be further understood that the content of the second filler material can be within a range between and including any of the minimum and maximum values ​​set forth above.

[0058] According to yet other embodiments, ceramic filler component 220 can include a specific content of amorphous material. For example, ceramic filler component 220 can include at least about 97%, such as at least about 98%, or even at least about 99%, amorphous material. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will further be understood that the content of amorphous material can be within a range between and including any of the values ​​recited above.

[0059] According to other embodiments, resin matrix component 210 can include specific materials. For example, resin matrix component 210 can include a perfluoropolymer. According to yet other embodiments, resin matrix component 410 can consist of a perfluoropolymer.

[0060] According to yet other embodiments, the perfluoropolymer of the resin matrix component 410 may include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the resin matrix component 410 may consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0061] According to yet other embodiments, the perfluoropolymer of the resin matrix component 410 may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet other embodiments, the perfluoropolymer of the resin matrix component 410 may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0062] According to yet other embodiments, the dielectric coating 200 can include a specific content of the resin matrix component 210. For example, the content of the resin matrix component 210 can be at least about 50 volume %, e.g., at least about 51 volume %, or at least about 52 volume %, or at least about 53 volume %, or at least about 54 volume %, or even at least about 55 volume %, based on the total volume of the dielectric coating 200. According to yet other embodiments, the content of the resin matrix component 210 can be no more than about 63 volume %, or no more than about 62 volume %, or no more than about 61 volume %, or no more than about 60 volume %, or no more than about 59 volume %, or no more than about 58 volume %, or even no more than about 57 volume %, based on the total volume of the dielectric coating 200. It will be understood that the content of the resin matrix component 210 can be any value between and including any of the minimum and maximum values ​​recited above. It will further be understood that the content of the resin matrix component 210 can be within a range between and including any of the minimum and maximum values ​​recited above.

[0063] According to yet other embodiments, the dielectric coating 205 may include certain materials. For example, the perfluoropolymer content may be at least about 50% by volume, e.g., at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the dielectric coating 405. According to yet other embodiments, the perfluoropolymer content may be about 63% by volume or less, e.g., about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the dielectric coating 200. It will be understood that the perfluoropolymer content may be any value between and including any of the minimum and maximum values ​​recited above. It will further be understood that the perfluoropolymer content may be within a range between and including any of the minimum and maximum values ​​recited above.

[0064] According to yet other embodiments, the dielectric coating 205 can include a specific porosity as measured using X-ray diffraction. For example, the porosity of the substrate 205 can be about 10% by volume or less, e.g., about 9% by volume or less, or about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or even about 5% by volume or less. It will be understood that the porosity of the dielectric coating 205 can be any value between and including any of the above values. It will further be understood that the porosity of the dielectric coating 205 can be within a range between and including any of the above values.

[0065] According to certain embodiments, the dielectric coating 205 can have a particular average thickness. For example, the average thickness of the dielectric coating 205 can be at least about 0.1 micron, e.g., at least about 0.5 micron, or at least about 1 micron, or at least about 2 microns, or at least about 3 microns, or at least about 4 microns, or even at least about 5 microns. According to still other embodiments, the average thickness of the dielectric coating 205 can be about 20 microns or less, e.g., about 18 microns or less, or about 16 microns or less, or about 14 microns or less, or about 12 microns or less, or even about 10 microns or less. It will be understood that the average thickness of the dielectric coating 205 can be any value between and including any of the minimum and maximum values ​​recited above. It will further be understood that the average thickness of the dielectric coating 405 can be within a range between and including any of the minimum and maximum values ​​recited above.

[0066] According to yet other embodiments, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range of 5 GHz and 20% RH. For example, the dielectric coating 205 may have a Df of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the Df of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the Df of the dielectric coating 205 may be within a range between and including any of the above values.

[0067] According to yet other embodiments, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range of 5 GHz and 80% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values.

[0068] According to yet other embodiments, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range of 10 GHz and 20% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values.

[0069] According to yet other embodiments, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range of 10 GHz and 80% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values.

[0070] According to yet other embodiments, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range of 28 GHz and 20% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values.

[0071] According to yet other embodiments, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range between 28 GHz and 80% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values.

[0072] According to yet other embodiments, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range between 39 GHz and 20% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values.

[0073] According to yet other embodiments, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range between 39 GHz and 80% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values.

[0074] According to yet another embodiment, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range of 76-81 GHz and 20% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values.

[0075] According to yet another embodiment, the dielectric coating 205 may have a specified dissipation factor (Df) measured in the range of 76-81 GHz and 80% RH. For example, the dielectric coating 205 may have a dissipation factor of about 0.005 or less, e.g., about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric coating 205 may be any value between and including any of the above values. It will further be understood that the dissipation factor of the dielectric coating 205 may be within a range between and including any of the above values. According to yet another embodiment, the dielectric coating 205 may have a particular coefficient of thermal expansion measured in accordance with IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA. For example, the dielectric coating 205 may have a coefficient of thermal expansion of about 80 ppm / °C or less.

[0076] According to yet another embodiment, the copper clad laminate 201 may have a particular coefficient of thermal expansion measured in accordance with IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA. For example, the copper clad laminate 201 may have a coefficient of thermal expansion of about 45 ppm / °C or less.

[0077] It will be understood that any copper clad laminate described herein may include an additional polymer-based layer between the coating of the copper clad laminate and any copper foil layer, and as described herein, the additional polymer-based layer may include a filler as described herein (i.e., a filled polymer layer) or may not include a filler (i.e., an unfilled polymer layer).

[0078] Turning now to methods of forming a printed circuit board, Figure 3 includes a diagram illustrating a forming method 300 for forming a printed circuit board according to embodiments described herein. According to certain embodiments, the forming method 300 may include a first step 310 of providing a copper foil layer, a second step 320 of combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, a third step 330 of forming the forming mixture into a dielectric coating over the copper foil layer to form a copper clad laminate, and a fourth step 340 of forming the copper clad laminate into a printed circuit board.

[0079] It will be understood that all descriptions, details, and characteristics provided herein with respect to forming method 100 may also apply to or describe corresponding aspects of forming method 300.

[0080] Turning now to embodiments of printed circuit boards formed according to forming method 300, Figure 4 includes a diagram of printed circuit board 400. As shown in Figure 4, printed circuit board 400 may include a copper clad laminate 401 that may include a copper foil layer 402 and a dielectric coating 405 covering a surface of copper foil layer 402. According to certain embodiments, dielectric coating 405 may include a resin matrix component 410 and a ceramic filler component 420.

[0081] Again, it will be understood that all descriptions provided herein regarding dielectric coating 205 and / or copper clad laminate 200 may also apply to modified versions of printed circuit board 400, including all components of printed circuit board 200.

[0082] Many different aspects and embodiments are possible. Some of these aspects and embodiments are described herein. After reading this specification, those skilled in the art will understand that these aspects and embodiments are merely exemplary and do not limit the scope of the invention. An embodiment may follow any one or more of the embodiments listed below.

[0083] Embodiment 1. A copper clad laminate comprising: a copper foil layer; and a dielectric coating overlying the copper foil layer, wherein the dielectric coating comprises a resin matrix component and a ceramic filler component, wherein the ceramic filler component comprises a first filler material, and wherein the dielectric coating has an average thickness of about 20 microns or less.

[0084] Embodiment 2. A copper clad laminate comprising: a copper foil layer; and a dielectric coating overlying the copper foil layer, wherein the dielectric coating comprises a resin matrix component and a ceramic filler component, wherein the ceramic filler component comprises a first filler material, the first filler material having a particle size distribution of at least about 0.2 microns and a D of no greater than about 1.6. 10 , D of at least about 0.5 microns and not more than about 2.7 microns 50 and D of at least about 0.8 microns and not more than about 4.7 microns 90 a copper clad laminate comprising:

[0085] Embodiment 3. A copper clad laminate comprising: a copper foil layer; and a dielectric coating overlying the copper foil layer, wherein the dielectric coating comprises a resin matrix component and a ceramic filler component, wherein the ceramic filler component comprises a first filler material, wherein the first filler material further comprises an average particle size of about 5 microns or less and a particle size distribution span (PSDS) of about 5 or less, wherein the PSDS is (D 90 -D 10 ) / D 50 is equal to D 90 D of the first filler material 90 D is equal to the particle size distribution measurement 10 D of the first filler material 10 D is equal to the particle size distribution measurement 50 D of the first filler material 50 Copper clad laminate, equivalent to particle size distribution measurements.

[0086] Embodiment 4. The particle size distribution of the first filler material is at least about 0.2 microns and a D of no more than about 1.6. 10 4. The copper clad laminate of any one of embodiments 1, 2, and 3, comprising:

[0087] Embodiment 5. The particle size distribution of the first filler material is at least about 0.5 microns and no greater than about 2.7 microns, D 50 4. The copper clad laminate of any one of embodiments 1, 2, and 3, comprising:

[0088] Embodiment 6. The particle size distribution of the first filler material is at least about 0.8 microns and no more than about 4.7 microns D 90 4. The copper clad laminate of any one of embodiments 1, 2, and 3, comprising:

[0089] Embodiment 7. The copper clad laminate of embodiment 1, wherein the first filler material further comprises an average particle size of about 10 microns or less.

[0090] Embodiment 8. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the first filler material comprises an average particle size of about 10 microns or less.

[0091] Embodiment 9. The first filler material comprises a particle size distribution span (PSDS) of about 5 or less, and the PSDS is (D 90 -D 10 ) / D 50 is equal to D 90 D of the first filler material 90 D is equal to the particle size distribution measurement 10 D of the first filler material 10 D is equal to the particle size distribution measurement 50 D of the first filler material 50 4. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0092] Embodiment 10. The first filler material is about 10 m 2 The copper clad laminate of any one of embodiments 1, 2, and 3, further comprising an average surface area of ​​less than or equal to 1 / g.

[0093] Embodiment 11. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the first filler material comprises a silica-based compound.

[0094] Embodiment 12. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the first filler material comprises silica.

[0095] Embodiment 13. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the resin matrix comprises a perfluoropolymer.

[0096] Embodiment 14. The copper clad laminate of embodiment 13, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0097] Embodiment 15. The copper clad laminate of embodiment 13, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0098] Embodiment 16. The copper clad laminate of embodiment 13, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0099] Embodiment 17. A copper clad laminate according to any one of embodiments 1, 2, and 3, wherein the content of the resin matrix component is at least about 50% by volume, based on the total volume of the dielectric coating.

[0100] Embodiment 18. A copper clad laminate according to any one of embodiments 1, 2, and 3, wherein the content of the resin matrix component is about 63% by volume or less, based on the total volume of the dielectric coating.

[0101] Embodiment 19. The copper clad laminate of embodiment 13, wherein the perfluoropolymer content is at least about 50% by volume, based on the total volume of the dielectric coating.

[0102] Embodiment 20. The copper clad laminate of embodiment 13, wherein the perfluoropolymer content is about 63% by volume or less, based on the total volume of the dielectric coating.

[0103] Embodiment 21. A copper clad laminate according to any one of embodiments 1, 2, and 3, wherein the content of the ceramic filler component is at least about 30% by volume, based on the total volume of the dielectric coating.

[0104] Embodiment 22. A copper clad laminate according to any one of embodiments 1, 2, and 3, wherein the content of the ceramic filler component is about 57% by volume or less, based on the total volume of the dielectric coating.

[0105] Embodiment 23. A copper clad laminate according to any one of embodiments 1, 2, and 3, wherein the content of the first filler material is at least about 80% by volume, based on the total volume of the ceramic filler component.

[0106] Embodiment 24. A copper clad laminate according to any one of embodiments 1, 2 and 3, wherein the content of the first filler material is about 100% by volume or less, based on the total volume of the ceramic filler component.

[0107] Embodiment 25. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the ceramic filler component further comprises a second filler material.

[0108] Embodiment 26. The copper clad laminate of embodiment 25, wherein the second filler material comprises a high dielectric constant ceramic material.

[0109] Embodiment 27. The copper clad laminate of embodiment 26, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0110] Embodiment 28. The copper clad laminate of embodiment 26, wherein the ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0111] Embodiment 29. The copper clad laminate of embodiment 25, wherein the content of the second filler material is at least about 1% by volume, based on the total volume of the ceramic filler component.

[0112] Embodiment 30. The copper clad laminate of embodiment 25, wherein the content of the second filler material is about 20% by volume or less, based on the total volume of the ceramic filler component.

[0113] Embodiment 31. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the ceramic filler component is at least about 97% amorphous.

[0114] Embodiment 32. A copper clad laminate according to any one of embodiments 1, 2, and 3, wherein the dielectric coating comprises no more than about 10% by volume porosity.

[0115] Embodiment 33. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the copper clad laminate comprises no more than about 10% by volume porosity.

[0116] Embodiment 34. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the dielectric coating comprises an average thickness of at least about 1 micron.

[0117] Embodiment 35. A copper clad laminate according to any one of embodiments 1, 2, and 3, wherein the dielectric coating comprises an average thickness of about 20 microns or less.

[0118] Embodiment 36. The dielectric coating is Approximately 0.005 or less 4. The copper clad laminate of any one of embodiments 1, 2, and 3, comprising a dissipation factor (5 GHz, 20% RH) of

[0119] Embodiment 37. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the dielectric coating comprises a dissipation factor (5 GHz, 20% RH) of about 0.001 or less.

[0120] Embodiment 38. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the dielectric coating comprises a coefficient of thermal expansion (all axes) of about 80 ppm / °C or less.

[0121] Embodiment 39. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the copper clad laminate comprises a peel strength between the copper foil layer and the dielectric coating of at least about 6 lb / in.

[0122] Embodiment 40. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the dielectric coating comprises no more than about 0.05% moisture absorption.

[0123] Embodiment 41. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the copper foil layer comprises an average thickness of at least about 6 microns.

[0124] Embodiment 42. The copper clad laminate of any one of embodiments 1, 2, and 3, wherein the copper foil layer comprises an average thickness of about 36 microns or less.

[0125] Embodiment 43. A printed circuit board comprising a copper clad laminate, the copper clad laminate comprising a copper foil layer and a dielectric coating covering the copper foil layer, the dielectric coating comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, and the dielectric coating having an average thickness of 20 microns or less.

[0126] Embodiment 44. A printed circuit board comprising a copper clad laminate, the copper clad laminate comprising a copper foil layer and a dielectric coating overlying the copper foil layer, the dielectric coating comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the first filler material having a particle size distribution of at least about 0.2 microns and a D of no greater than about 1.6. 10 , D of at least about 0.5 microns and not more than about 2.7 microns 50 and D of at least about 0.8 microns and not more than about 4.7 microns 90 a printed circuit board including:

[0127] Embodiment 45. A printed circuit board comprising a copper clad laminate, the copper clad laminate comprising a copper foil layer and a dielectric coating overlying the copper foil layer, the dielectric coating comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the first filler material further comprising an average particle size of about 5 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 D of the first filler material 90D is equal to the particle size distribution measurement 10 D of the first filler material 10 D is equal to the particle size distribution measurement 50 D of the first filler material 50 Printed circuit board, equivalent to particle size distribution measurements.

[0128] Embodiment 46. The particle size distribution of the first filler material is at least about 0.2 microns and no greater than about 1.6 D 10 46. ​​The printed circuit board of any one of embodiments 43, 44, and 45, comprising:

[0129] Embodiment 47. The particle size distribution of the first filler material is at least about 0.5 microns and no greater than about 2.7 microns D 50 46. ​​The printed circuit board of any one of embodiments 43, 44, and 45, comprising:

[0130] Embodiment 48. The particle size distribution of the first filler material is at least about 0.8 microns and no greater than about 4.7 microns D 90 46. ​​The printed circuit board of any one of embodiments 43, 44, and 45, comprising:

[0131] Embodiment 49. The printed circuit board of any one of embodiments 43, 44, and 45, wherein the first filler material further comprises an average particle size of about 10 microns or less.

[0132] Embodiment 50. The printed circuit board of any one of embodiments 43, 44, and 45, wherein the first filler material comprises an average particle size of about 10 microns or less.

[0133] Embodiment 51. The first filler material comprises a particle size distribution span (PSDS) of about 5 or less, and the PSDS is (D 90 -D 10 ) / D 50 is equal to D 90 D of the first filler material 90 D is equal to the particle size distribution measurement 10 D of the first filler material 10D is equal to the particle size distribution measurement 50 D of the first filler material 50 46. ​​The printed circuit board of any one of embodiments 43, 44, and 45, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0134] Embodiment 52. The first filler material is about 10 m 2 46. ​​The printed circuit board of any one of embodiments 43, 44, and 45, further comprising an average surface area of ​​less than or equal to 1 / g.

[0135] Embodiment 53. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the first filler material comprises a silica-based compound.

[0136] Embodiment 54. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the first filler material comprises silica.

[0137] Embodiment 55. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the resin matrix comprises a perfluoropolymer.

[0138] Embodiment 56. The printed circuit board of embodiment 55, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0139] Embodiment 57. The printed circuit board of embodiment 55, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0140] Embodiment 58. The printed circuit board of embodiment 55, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0141] Embodiment 59. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the content of the resin matrix component is at least about 50% by volume, based on the total volume of the dielectric coating.

[0142] Embodiment 60. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the content of the resin matrix component is about 63% by volume or less, based on the total volume of the dielectric coating.

[0143] Embodiment 61. The printed circuit board of embodiment 55, wherein the perfluoropolymer content is at least about 50% by volume, based on the total volume of the dielectric coating.

[0144] Embodiment 62. The printed circuit board of embodiment 55, wherein the perfluoropolymer content is about 63% by volume or less, based on the total volume of the dielectric coating.

[0145] Embodiment 63. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the content of the ceramic filler component is at least about 50% by volume, based on the total volume of the dielectric coating.

[0146] Embodiment 64. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the content of the ceramic filler component is about 57% by volume or less, based on the total volume of the dielectric coating.

[0147] Embodiment 65. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the content of the first filler material is at least about 80% by volume, based on the total volume of the ceramic filler component.

[0148] Embodiment 66. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the content of the first filler material is about 100% by volume or less, based on the total volume of the ceramic filler component.

[0149] Embodiment 67. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the ceramic filler component further comprises a second filler material.

[0150] Embodiment 68. A printed circuit board as described in embodiment 67, wherein the second filler material comprises a high dielectric constant ceramic material.

[0151] Embodiment 69. A printed circuit board according to embodiment 68, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0152] Embodiment 70. The printed circuit board of embodiment 68, wherein the ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0153] Embodiment 71. The printed circuit board of embodiment 67, wherein the content of the second filler material is at least about 1% by volume, based on the total volume of the ceramic filler component.

[0154] Embodiment 72. The printed circuit board of embodiment 67, wherein the content of the second filler material is about 20% by volume or less, based on the total volume of the ceramic filler component.

[0155] Embodiment 73. The printed circuit board of any one of embodiments 43, 44, and 45, wherein the ceramic filler component is at least about 97% amorphous.

[0156] Embodiment 74. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the dielectric coating comprises a porosity of about 10% by volume or less.

[0157] Embodiment 75. The printed circuit board of any one of embodiments 43, 44, and 45, wherein the copper clad laminate comprises no more than about 10% by volume porosity.

[0158] Embodiment 76. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the dielectric coating has an average thickness of at least about 1 micron.

[0159] Embodiment 77. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the dielectric coating has an average thickness of about 20 microns or less.

[0160] Embodiment 78. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the dielectric coating comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less.

[0161] Embodiment 79. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the dielectric coating comprises a dissipation factor (5 GHz, 20% RH) of about 0.0014 or less.

[0162] Embodiment 80. The printed circuit board of any one of embodiments 43, 44, and 45, wherein the dielectric coating comprises a coefficient of thermal expansion (all axes) of about 80 ppm / °C or less.

[0163] Embodiment 81. The printed circuit board of any one of embodiments 43, 44, and 45, wherein the copper clad laminate comprises a peel strength between the copper foil layer and the dielectric coating of at least about 6 lb / in.

[0164] Embodiment 82. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the dielectric coating comprises moisture absorption of about 0.05% or less.

[0165] Embodiment 83. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the copper foil layer has an average thickness of at least about 6 microns.

[0166] Embodiment 84. A printed circuit board according to any one of embodiments 43, 44, and 45, wherein the copper foil layer has an average thickness of about 36 microns or less.

[0167] Embodiment 85. A method of forming a copper clad laminate, comprising: providing a copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric coating overlying the copper foil, wherein the dielectric coating has an average thickness of about 20 microns or less.

[0168] Embodiment 86. A method of forming a copper clad laminate, comprising: providing a copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric coating overlying the copper foil, wherein the ceramic filler precursor component comprises a first filler precursor material, and the first filler precursor material has a particle size distribution of at least about 0.2 microns and no more than about 1.6 microns, D. 10 , D of at least about 0.5 microns and not more than about 2.7 microns 50 and D of at least about 0.8 microns and not more than about 4.7 microns 90 A method comprising:

[0169] Embodiment 87. A method of forming a copper clad laminate, comprising: providing a copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric coating overlying the copper foil, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material further comprising an average particle size of about 5 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS having a molecular weight of about 1000 to about 15000; 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurements, method.

[0170] Embodiment 88. The particle size distribution of the first filler precursor material is at least about 0.2 microns and no greater than about 1.6 microns, D 10 88. The method of any one of embodiments 85, 86, and 87, comprising:

[0171] Embodiment 89. The particle size distribution of the first filler precursor material is at least about 0.5 microns and no greater than about 2.7 microns, D 50 88. The method of any one of embodiments 85, 86, and 87, comprising:

[0172] Embodiment 90. The particle size distribution of the first filler precursor material is at least about 0.8 microns and no greater than about 4.7 microns, D 90 88. The method of any one of embodiments 85, 86, and 87, comprising:

[0173] Embodiment 91. The method of embodiment 85, wherein the first filler precursor material further comprises an average particle size of about 10 microns or less.

[0174] Embodiment 92. The method of any one of embodiments 85, 86, and 87, wherein the first filler precursor material comprises an average particle size of about 10 microns or less.

[0175] Embodiment 93. A first filler precursor material comprises a particle size distribution span (PSDS) of about 5 or less, wherein the PSDS is (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50The method of any one of embodiments 85, 86, and 87, wherein the particle size distribution measurement is equivalent to the particle size distribution measurement.

[0176] Embodiment 94. The first filler precursor material is about 10 m 2 88. The method of any one of embodiments 85, 86, and 87, further comprising an average surface area of ​​less than or equal to 1 / g.

[0177] Embodiment 95. The method of any one of embodiments 85, 86, and 87, wherein the first filler precursor material comprises a silica-based compound.

[0178] Embodiment 96 The method of any one of embodiments 85, 86, and 87, wherein the first filler precursor material comprises silica.

[0179] Embodiment 97. The method of any one of embodiments 85, 86, and 87, wherein the resin matrix precursor component comprises a perfluoropolymer.

[0180] Embodiment 98. The method of embodiment 97, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0181] Embodiment 99. The method of embodiment 97, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0182] Embodiment 100. The method of embodiment 97, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0183] Embodiment 101. The method of any one of embodiments 85, 86, and 87, wherein the content of the resin matrix precursor component is at least about 50% by volume, based on the total volume of the dielectric coating.

[0184] Embodiment 102. The method of any one of embodiments 85, 86, and 87, wherein the content of the resin matrix precursor component is about 63% by volume or less, based on the total volume of the dielectric coating.

[0185] Embodiment 103. The method of embodiment 97, wherein the perfluoropolymer content is at least about 50% by volume, based on the total volume of the dielectric coating.

[0186] Embodiment 104. The method of embodiment 97, wherein the perfluoropolymer content is about 63% by volume or less, based on the total volume of the dielectric coating.

[0187] Embodiment 105. The method of any one of embodiments 85, 86, and 87, wherein the content of the ceramic filler precursor component is at least about 50% by volume, based on the total volume of the dielectric coating.

[0188] Embodiment 106. The method of any one of embodiments 85, 86, and 87, wherein the content of the ceramic filler precursor component is about 57 volume % or less, based on the total volume of the dielectric coating.

[0189] Embodiment 107. The method of any one of embodiments 85, 86, and 87, wherein the content of the first filler precursor material is at least about 80% by volume, based on the total volume of the ceramic filler precursor components.

[0190] Embodiment 108. The method of any one of embodiments 85, 86, and 87, wherein the content of the first filler precursor material is about 100% by volume or less, based on the total volume of the ceramic filler precursor components.

[0191] Embodiment 109. The method of any one of embodiments 85, 86, and 87, wherein the ceramic filler precursor component further comprises a second filler precursor material.

[0192] Embodiment 110. The method of embodiment 109, wherein the second filler precursor material comprises a high dielectric constant ceramic material.

[0193] Embodiment 111. The method of embodiment 110, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0194] Embodiment 112. The method of embodiment 110, wherein the ceramic filler precursor component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0195] Embodiment 113. The method of embodiment 109, wherein the content of the second filler precursor material is at least about 1% by volume, based on the total volume of the ceramic filler precursor components.

[0196] Embodiment 114. The method of embodiment 109, wherein the content of the second filler precursor material is about 20% by volume or less, based on the total volume of the ceramic filler precursor components.

[0197] Embodiment 115. The method of any one of embodiments 85, 86, and 87, wherein the ceramic filler precursor component is at least about 97% amorphous.

[0198] Embodiment 116. The method of any one of embodiments 85, 86, and 87, wherein the dielectric coating comprises a porosity of about 10% by volume or less.

[0199] Embodiment 117. The method of any one of embodiments 85, 86, and 87, wherein the copper clad laminate comprises no more than about 10% by volume porosity.

[0200] Embodiment 118. The method of any one of embodiments 85, 86, and 87, wherein the dielectric coating comprises an average thickness of at least about 1 micron.

[0201] Embodiment 119. The method of any one of embodiments 85, 86, and 87, wherein the dielectric coating comprises an average thickness of about 20 microns or less.

[0202] Embodiment 120. The method of any one of embodiments 85, 86, and 87, wherein the dielectric coating comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less.

[0203] Embodiment 121. The method of any one of embodiments 85, 86, and 87, wherein the dielectric coating comprises a dissipation factor (5 GHz, 20% RH) of about 0.0014 or less.

[0204] Embodiment 122. The method of any one of embodiments 85, 86, and 87, wherein the dielectric coating comprises a coefficient of thermal expansion (all axes) of about 80 ppm / °C or less.

[0205] Embodiment 123. The method of any one of embodiments 85, 86, and 87, wherein the copper clad laminate comprises a peel strength between the copper foil layer and the dielectric coating of at least about 6 lb / in.

[0206] Embodiment 124. The method of any one of embodiments 85, 86, and 87, wherein the dielectric coating comprises no more than about 0.05% moisture absorption.

[0207] Embodiment 125. The method of any one of embodiments 85, 86, and 87, wherein the copper foil layer comprises an average thickness of at least about 6 microns.

[0208] Embodiment 126. The method of any one of embodiments 85, 86, and 87, wherein the copper foil layer comprises an average thickness of about 36 microns or less.

[0209] Embodiment 127. A method of forming a printed circuit board, comprising: providing a copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric coating overlying the copper foil, wherein the dielectric coating has an average thickness of about 20 microns or less.

[0210] Embodiment 128. A method of forming a printed circuit board, comprising: providing a copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric coating overlying the copper foil, wherein the ceramic filler precursor component comprises a first filler precursor material, and the first filler precursor material has a particle size distribution of at least about 0.2 microns and no more than about 1.6 microns, D. 10 , D of at least about 0.5 microns and not more than about 2.7 microns 50 and D of at least about 0.5 microns and not more than about 4.7 microns 90 A method comprising:

[0211] Embodiment 129. A method of forming a printed circuit board, comprising: providing a copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric coating overlying the copper foil, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material further comprising an average particle size of about 5 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS having a molecular weight of about 1000 to about 15000; 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurements, method.

[0212] Embodiment 130. The particle size distribution of the first filler precursor material is at least about 0.2 microns and no greater than about 1.6 microns, D 10 130. The method of any one of embodiments 127, 128, and 129, comprising:

[0213] Embodiment 131. The particle size distribution of the first filler precursor material is at least about 0.5 microns and no greater than about 2.7 microns, D 50 130. The method of any one of embodiments 127, 128, and 129, comprising:

[0214] Embodiment 132. The particle size distribution of the first filler precursor material is at least about 0.8 microns and no greater than about 4.7 microns, D 90 130. The method of any one of embodiments 127, 128, and 129, comprising:

[0215] Embodiment 133. The method of embodiment 132, wherein the first filler precursor material further comprises an average particle size of about 10 microns or less.

[0216] Embodiment 134. The method of any one of embodiments 127, 128, and 129, wherein the first filler precursor material comprises an average particle size of about 10 microns or less.

[0217] Embodiment 135. A first filler precursor material comprises a particle size distribution span (PSDS) of about 5 or less, wherein the PSDS is (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 The method of any one of embodiments 127, 128, and 129, wherein the particle size distribution measurement is equivalent to the particle size distribution measurement.

[0218] Embodiment 136. The first filler precursor material is about 10 m2 130. The method of any one of embodiments 127, 128, and 129, further comprising an average surface area of ​​less than or equal to 1 / g.

[0219] Embodiment 137. The method of any one of embodiments 127, 128, and 129, wherein the first filler precursor material comprises a silica-based compound.

[0220] Embodiment 138 The method of any one of embodiments 127, 128, and 129, wherein the first filler precursor material comprises silica.

[0221] Embodiment 139. The method of any one of embodiments 127, 128, and 129, wherein the resin matrix precursor component comprises a perfluoropolymer.

[0222] Embodiment 140. The method of embodiment 139, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0223] Embodiment 141. The method of embodiment 139, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0224] Embodiment 142. The method of embodiment 139, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0225] Embodiment 143. The method of any one of embodiments 127, 128, and 129, wherein the content of the resin matrix precursor component is at least about 50% by volume, based on the total volume of the dielectric coating.

[0226] Embodiment 144. The method of any one of embodiments 127, 128, and 129, wherein the content of the resin matrix precursor component is about 63% by volume or less, based on the total volume of the dielectric coating.

[0227] Embodiment 145. The method of embodiment 139, wherein the perfluoropolymer content is at least about 50% by volume, based on the total volume of the dielectric coating.

[0228] Embodiment 146. The method of embodiment 139, wherein the perfluoropolymer content is about 63% by volume or less, based on the total volume of the dielectric coating.

[0229] Embodiment 147. The method of any one of embodiments 127, 128, and 129, wherein the content of the ceramic filler precursor component is at least about 30% by volume, based on the total volume of the dielectric coating.

[0230] Embodiment 148. The method of any one of embodiments 127, 128, and 129, wherein the content of the ceramic filler precursor component is about 57 volume % or less, based on the total volume of the dielectric coating.

[0231] Embodiment 149. The method of any one of embodiments 127, 128, and 129, wherein the content of the first filler precursor material is at least about 80% by volume, based on the total volume of the ceramic filler precursor components.

[0232] Embodiment 150. The method of any one of embodiments 127, 128, and 129, wherein the content of the first filler precursor material is about 100% by volume or less, based on the total volume of the ceramic filler precursor components.

[0233] Embodiment 151. The method of any one of embodiments 127, 128, and 129, wherein the ceramic filler precursor component further comprises a second filler precursor material.

[0234] Embodiment 152. The method of embodiment 151, wherein the second filler precursor material comprises a high dielectric constant ceramic material.

[0235] Embodiment 153. The method of embodiment 152, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0236] Embodiment 154. The method of embodiment 152, wherein the ceramic filler precursor component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0237] Embodiment 155. The method of embodiment 151, wherein the content of the second filler precursor material is at least about 1% by volume, based on the total volume of the ceramic filler precursor component.

[0238] Embodiment 156. The method of embodiment 151, wherein the content of the second filler precursor material is about 20% by volume or less, based on the total volume of the ceramic filler precursor components.

[0239] Embodiment 157. The method of any one of embodiments 127, 128, and 129, wherein the ceramic filler precursor component is at least about 97% amorphous.

[0240] Embodiment 158. The method of any one of embodiments 127, 128, and 129, wherein the dielectric coating comprises a porosity of about 10% by volume or less.

[0241] Embodiment 159. The method of any one of embodiments 127, 128, and 129, wherein the copper clad laminate comprises no more than about 10% by volume porosity.

[0242] Embodiment 160. The method of any one of embodiments 127, 128, and 129, wherein the dielectric coating comprises an average thickness of at least about 1 micron.

[0243] Embodiment 161. The method of any one of embodiments 127, 128, and 129, wherein the dielectric coating comprises an average thickness of about 20 microns or less.

[0244] Embodiment 162. The method of any one of embodiments 127, 128, and 129, wherein the dielectric coating has a dissipation factor (5 GHz, 20% RH) of about 0.005 or less.

[0245] Embodiment 163. The method of any one of embodiments 127, 128, and 129, wherein the dielectric coating has a dissipation factor (5 GHz, 20% RH) of about 0.0014 or less.

[0246] Embodiment 164. The method of any one of embodiments 127, 128, and 129, wherein the dielectric coating comprises a coefficient of thermal expansion (all axes) of about 80 ppm / °C or less.

[0247] Embodiment 165. The method of any one of embodiments 127, 128, and 129, wherein the copper clad laminate comprises a peel strength between the copper foil layer and the dielectric coating of at least about 6 lb / in.

[0248] Embodiment 166. The method of any one of embodiments 127, 128, and 129, wherein the dielectric coating comprises no more than about 0.05% moisture absorption.

[0249] Embodiment 167. The method of any one of embodiments 127, 128, and 129, wherein the copper foil layer comprises an average thickness of at least about 6 microns.

[0250] Embodiment 168. The method of any one of embodiments 127, 128, and 129, wherein the copper foil layer comprises an average thickness of about 36 microns or less.

[0251] It should be noted that not all of the activities described above in the general description or examples are required, some of the specific activities may not be required, and one or more additional activities may be performed in addition to the activities described. Furthermore, the order in which the activities are listed is not necessarily the order in which they are performed.

[0252] Benefits, other advantages, and solutions to problems have been described above with respect to particular embodiments. However, the benefits, advantages, solutions to problems, and any features that may bring about or make more pronounced any benefit, advantage, or solution should not be construed as critical, necessary, or essential features of any or all of the claims.

[0253] The specifications and illustrations of the embodiments described herein are intended to provide a general understanding of the structure of various embodiments. The specifications and illustrations are not intended to serve as an exhaustive and comprehensive description of all elements and features of apparatus and systems that use the structures or methods described herein. Separate embodiments may be provided in combination in a single embodiment, and conversely, various features that are described for brevity in the context of a single embodiment may also be provided separately or in any subcombination. Furthermore, references to values ​​described in ranges include each and every value within that range, as may become apparent to those skilled in the art upon reading this specification. Other embodiments may be utilized and derived from the present disclosure, such that structural substitutions, logical substitutions, or other changes may be made without departing from the scope of the present disclosure. Accordingly, the present disclosure should be considered illustrative and not limiting.

Claims

1. A copper clad laminate, a copper foil layer; and a dielectric coating covering the copper foil layer, wherein the dielectric coating comprises: a resin matrix component; a ceramic filler component, the ceramic filler component comprises a first filler material, and the dielectric coating has an average thickness of about 20 microns or less; the content of the ceramic filler component is at least 30% by volume based on the total volume of the dielectric coating; The first filler material comprises silica and has a D of at least about 0.5 microns and not more than about 2.7 microns. ５０ having a particle size distribution, the dielectric coating comprises a porosity of about 8% by volume or less; the first filler material comprises a particle size distribution span (PSDS) of about 5 or less, the PSDS being equal to (D 90 -D 10 ) / D 50 , where D 90 is equal to the D 90 particle size distribution measurement of the first filler material, D 10 is equal to the D 10 particle size distribution measurement of the first filler material, and D 50 is equal to the D 50 particle size distribution measurement of the first filler material; the dielectric coating comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less; Copper clad laminate.

2. the first filler material further comprising an average particle size of about 10 microns or less; The copper clad laminate of claim 1.

3. The first filler material is about 10 m ２ / g or less, The copper clad laminate of claim 1.

4. the first filler material comprises a silica-based compound; The copper clad laminate of claim 1.

5. the first filler material comprises silica; The copper clad laminate of claim 1.

6. the resin matrix component comprises a perfluoropolymer; The copper clad laminate of claim 1.

7. the resin matrix component content is at least about 50% by volume and not more than about 63% by volume, based on the total volume of the dielectric coating; The copper clad laminate of claim 1.

8. the ceramic filler component is present in an amount of at least about 30% by volume and not more than about 57% by volume, based on the total volume of the dielectric coating; The copper clad laminate of claim 1.

9. the content of the first filler material is at least about 80% by volume and not more than about 100% by volume, based on the total volume of the ceramic filler component; The copper clad laminate of claim 1.

10. A printed circuit board comprising a copper clad laminate, the copper clad laminate comprising: a copper foil layer; and a dielectric coating covering the copper foil layer, wherein the dielectric coating comprises: a resin matrix component; a ceramic filler component, the ceramic filler component comprises a first filler material; the dielectric coating has an average thickness of 20 microns or less; the content of the ceramic filler component is at least 30% by volume based on the total volume of the dielectric coating; The first filler material comprises silica and has a D of at least about 0.5 microns and not more than about 2.7 microns. ５０ having a particle size distribution, the dielectric coating comprises a porosity of about 8% by volume or less; the first filler material comprises a particle size distribution span (PSDS) of about 5 or less, the PSDS being equal to (D 90 -D 10 ) / D 50 , where D 90 is equal to the D 90 particle size distribution measurement of the first filler material, D 10 is equal to the D 10 particle size distribution measurement of the first filler material, and D 50 is equal to the D 50 particle size distribution measurement of the first filler material; the dielectric coating comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less; Printed circuit board.

11. the first filler material further comprising an average particle size of about 10 microns or less; The printed circuit board of claim 10.

12. 1. A method of forming a copper clad laminate, said method comprising: providing a copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; forming the forming mixture into a dielectric coating overlying the copper foil layer; the dielectric coating has an average thickness of about 20 microns or less; the ceramic filler precursor component comprises a first filler precursor material; the content of the ceramic filler precursor component is at least 30% by volume based on the total volume of the forming mixture; The first filler precursor material comprises silica and has a D of at least about 0.5 microns and not more than about 2.7 microns. ５０ having a particle size distribution, the dielectric coating comprises a porosity of about 8% by volume or less; the first filler precursor material comprises a particle size distribution span (PSDS) of about 5 or less, the PSDS being equal to (D 90 -D 10 ) / D 50 , where D 90 is equal to the D 90 particle size distribution measurement of the first filler precursor material, D 10 is equal to the D 10 particle size distribution measurement of the first filler precursor material, and D 50 is equal to the D 50 particle size distribution measurement of the first filler precursor material; the dielectric coating comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less; method.

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