Diversion-less gas administration

Abstract

Various embodiments include systems and apparatus for split-flow-less dosing of process gases, including split-flow-less dosing of precursor gases in deposition systems. In one example, the disclosed subject matter is a split-flow-less pressure-based gas dosing system including a process gas inlet coupled to an inlet valve, a flow controller coupled downstream of the inlet valve, and a line fill volume (LCV) coupled downstream of the inlet valve and the flow controller. The LCV receives an initial single dose of process gas. A pressure sensor is coupled to the LCV to determine the pressure level within the LCV, and an outlet valve is pneumatically coupled downstream of the LCV. The outlet valve is pneumatically coupled to a process chamber downstream of the outlet valve. Other systems, apparatus, and methods are also disclosed.

Description

[Technical Field]

[0001] Priority claims This patent application claims priority to U.S. Provisional Application No. 63 / 015,243, entitled "DIVERTLESS DOSING," filed April 24, 2020, and further claims priority to U.S. Provisional Application No. 62 / 706,328, also entitled "DIVERTLESS DOSING," filed August 10, 2020, the disclosures of each of which are incorporated herein by reference in their entireties. The disclosed subject matter generally relates to the field of depositing films on substrates. More specifically, in various embodiments, the disclosed subject matter relates to delivering one or more precursor gases (e.g., one or more dosages) to a process chamber with reduced precursor gas waste and reduced dosage variation. [Background technology]

[0002] In a typical atomic layer deposition (ALD) process, individual precursor gases are pulsed sequentially onto the surface of a substrate without mixing the precursors in the vapor phase. Each individual precursor reacts with the substrate's surface, forming the atomic layers of the film, one layer at a time. The surface reaction occurs such that only one layer can be deposited at a time once the reaction is complete. This surface reaction occurs regardless of the number of molecules applied to the surface in an overdose mode. The film is built by introducing short bursts of variable gas in rapid cycles. During ALD processing using a liquid delivery system, it is necessary to maintain an established flow of liquid precursors in the vapor phase. To keep the flow active, the flow must be diverted to the foreline of the ALD chamber when the liquid precursor is not needed in the deposition process.

[0003] The information provided in this section is provided to provide one of ordinary skill in the art with a context for the following disclosed subject matter and should not be considered admitted prior art. Summary of the Invention

[0004] In various embodiments, a diversionless gas dosing system is disclosed. The diversionless gas dosing system includes a process gas inlet pneumatically coupled to an inlet valve, a flow controller pneumatically coupled to the inlet valve, and a line charge-volume (LCV) pneumatically coupled downstream of the inlet valve and the flow controller. The LCV receives an initial dose of process gas. A pressure sensor is coupled to the LCV and determines a pressure level within the LCV. An outlet valve is pneumatically coupled downstream of the LCV. The outlet valve is positioned to be pneumatically coupled to a process chamber downstream of the outlet valve. The flow controller controls the flow of process gas to the process chamber independently of the inlet valve and substantially maintains the flow at a predetermined set point when the outlet valve is open. The diversionless gas dosing system is time-independent with respect to the size of the initial dose of process gas.

[0005] In various embodiments, an apparatus for supplying a precursor gas is disclosed. The apparatus includes a precursor gas inlet pneumatically coupled to an inlet valve, a flow controller pneumatically coupled downstream of the inlet valve, and a line fill volume (LCV) pneumatically coupled downstream of the flow controller. The LCV is configured to be filled with an initial single dose of precursor gas. A pressure sensor is coupled to the LCV and determines a pressure level within the LCV. The initial single dose of precursor gas is determined based on the pressure level within the LCV. An outlet valve is pneumatically coupled downstream of the LCV. The outlet valve is configured to be pneumatically coupled to a process chamber downstream of the outlet valve. The outlet valve is further configured to open to release the initial single dose of precursor gas into the process chamber after the pressure level of the LCV reaches a predetermined value. The flow controller controls the flow of precursor gas to the process chamber independently of the inlet valve and substantially maintains the flow at a predetermined set point when the outlet valve is open. The apparatus is time-independent with respect to the size of the initial single dose of process gas.

[0006] In various embodiments, a diversion-less gas dosing system is disclosed. The diversion-less gas dosing system includes a first process gas inlet pneumatically coupled to a first inlet valve and receiving a first process gas, a second process gas inlet pneumatically coupled to a second inlet valve and receiving a second process gas, a first flow controller and a second flow controller separately pneumatically coupled downstream of the first inlet valve and the second inlet valve, respectively, and at least one line fill volume (LCV) pneumatically coupled downstream of the first flow controller and the second flow controller. The at least one LCV receives at least one initial single dose of a mixture of the first process gas and the second process gas and separates the initial single dose of the first process gas from the second process gas. At least one pressure sensor separately coupled to each of the at least one LCV determines a pressure level within each of the at least one LCV. An outlet valve is pneumatically coupled downstream of the at least one LCV. The outlet valve is pneumatically coupled to the process chamber downstream of the outlet valve.The diversion-less gas dosing system is time independent with respect to the size of the initial dose of process gas.

[0007] [Brief explanation of the drawings]

[0008] [Figure 1A] FIG. 1A is a timing diagram for a prior art dose-divert system.

[0009] [Figure 1B] FIG. 1B is a diagram illustrating a prior art dose distribution system.

[0010] [Figure 2] FIG. 2 is a line fill volume (LCV) graph showing pressure as a function of time for the prior art dose distribution system of FIG. 1B.

[0011] [Figure 3] FIG. 3 is a prior art response variability and ramp rate chart showing the potential for large variations in mass flow controller (MFC) to precursor gas dosage delivered to a process chamber, where the MFC variation chart is typical of those used in prior art dosage distribution systems such as that shown in FIG. 1B.

[0012] [Figure 4A] FIG. 4A illustrates an example process sequence timing diagram in accordance with various embodiments of the disclosed subject matter.

[0013] [Figure 4B] FIG. 4B illustrates an example of a branch-less gas dosing system according to various embodiments of the disclosed subject matter.

[0014] [Figure 4C] FIG. 4C illustrates another example of a branch-less gas dosing system according to various embodiments of the disclosed subject matter.

[0015] [Figure 4D] FIG. 4D illustrates an example of a self-calibrating flow meter that can be used in conjunction with the split-flow-less gas dosing system of FIGS. 4B and 4C.

[0016] [Figure 4E] FIG. 4E illustrates an example of another self-calibrating flow meter that can be used in conjunction with the split-flow-less gas dosing system of FIGS. 4B and 4C. [Figure 4F] FIG. 4F illustrates an example of another self-calibrating flow meter that can be used in conjunction with the split-flow-less gas dosing system of FIGS. 4B and 4C. [Figure 4G] FIG. 4G illustrates an example of another self-calibrating flow meter that can be used in conjunction with the split-flow-less gas dosing system of FIGS. 4B and 4C.

[0017] [Figure 5]FIG. 5 illustrates an example vapor pressure graph including LCV two-stage pressure regulation in accordance with various embodiments of the disclosed subject matter. DETAILED DESCRIPTION OF THE INVENTION

[0018] The following description includes illustrative examples, devices, and apparatuses that embody various aspects of the disclosed subject matter. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide an understanding of various embodiments of the inventive subject matter. However, it will be apparent to those skilled in the art that various embodiments of the disclosed subject matter may be practiced without these specific details. Additionally, well-known structures, materials, and techniques have not been shown in detail in order to avoid obscuring the various illustrated embodiments.

[0019] As known in the relevant art, chemical vapor deposition (CVD) processes in general, or atomic layer deposition (ALD) processes in particular, expose a workpiece (e.g., a substrate such as a semiconductor wafer) to multiple applications of chemical precursor gases (e.g., subsequent applications of precursor gas "A") and / or alternating chemical precursor gases (e.g., precursor gases "A" and "B").

[0020] In one example of an ALD process using two precursor gases, a first precursor, "A," forms a monolayer of a film on a substrate. A second precursor, "B," chemically reacts with the "A" monolayer to form a monolayer of a third desired compound, "C," on the substrate. To form a usable compound film, "C," on the substrate, the substrate is exposed to alternating applications of the "A" and "B" precursor gases hundreds or thousands of times. To increase the productivity of semiconductor ALD deposition tools, the length of time for at least one of the "A" or "B" precursor steps, in this example, needs to be reduced or minimized.

[0021] As outlined in more detail below, various embodiments of the disclosed subject matter make physical and operational modifications to gas (e.g., precursor gas) delivery hardware and process sequences to shorten ALD process times, reduce process variability, and eliminate waste of specialized process gases, thereby reducing operational costs.

[0022] for example, Heat-based Mass flow controllers (MFCs) often require approximately 500 milliseconds to approximately 1000 milliseconds to reach a given flow rate setpoint. Currently, during an ALD process cycle, precursor gases are flowed through the MFC to a gas diversion element ("diverter") for approximately 1-2 seconds, after which the gas path is switched from the diverter to delivery of gas to the process chamber by opening the outlet valve to the chamber. This procedure is currently performed so that the MFC is at a steady-state command flow level, increasing or maximizing the flow delivered to the chamber, thereby reducing or minimizing the time for each step of the ALD process. Furthermore, the rate and variability of gas ramp-up to reach a given MFC setpoint can significantly affect the mass of gas delivered to the chamber.

[0023] However, delivering precursors to a divert, thus bypassing the process chamber, wastes precursor gas. Wasted precursor gas increases the cost of ownership (COO) of operating a semiconductor tool for ALD. In some cases, as described in more detail below to highlight important advantages of the disclosed subject matter over current technology, an additional step in the process involves first closing the divert valve while the MFC is flowing and then waiting a period of time before opening the outlet valve to the process chamber. This procedure pressurizes the line between the MFC and the chamber outlet valve, and the pressurization procedure is often referred to as "line fill volume" (LCV) operation. The LCV "chamber" can be designed to contain a desired volume, for example, by changing the internal diameter of the gas line and / or increasing the length of the gas line. The LCV can also be increased by adding an accumulator chamber. By pressurizing the LCV downstream of the MFC and then opening the outlet valve, pulses (or doses) of gas can be delivered to the process chamber at flow rates and pressures higher than the steady-state MFC flow rate, further accelerating the ALD process. The effect of increasing the pulse dose flow rate and pressure is to increase the mole fraction of the precursor gas earlier in the process step. The increased mole fraction earlier in the process step increases the diffusion of each precursor gas or gases into complex vertical structures, such as word lines, which occurs more quickly and therefore reduces the overall precursor step time. Achieving the increased mole fraction is currently implemented by sequencing various valves on a set schedule or recipe. The current procedure is shown with reference to Figure 1A.

[0024] FIG. 1A shows a timing diagram 100 for a prior art dose diversion system. An example of a dose diversion system is described below with reference to Figure 1B. Figure 1A shows separate diagrams for outlet valve timing signal 110, diversion valve timing signal 130, and MFC timing signal 150. Outlet valve timing signal 110 and diversion valve timing signal 130 each indicate a "0" and a "1" for the closed and open positions of the valve, respectively. MFC timing signal 150 indicates a closed position "0" and a set point value "SP," respectively.

[0025] During a first period 101, which may be considered an MFC stabilization period, outlet valve timing signal 110 is at "0." As a result, the outlet valve is in the aforementioned closed position, diverter valve timing signal 130 is at the aforementioned "1," and MFC timing signal 150 is at the aforementioned setpoint value "SP." Thus, the diverter valve and MFC are in their open and setpoint positions, respectively.

[0026] During the second period 103, which can be considered the line fill period, the two non-MFC valves (i.e., the diverter valve and the outlet valve) are closed. Thus, the outlet valve remains closed and the diverter valve is now closed while the MFC remains at its set point position. This can be considered the period of precursor gas flow into the chamber. can During a third period 105, the outlet valve is open to allow precursor gas to enter the process chamber; the outlet valve is now open and the diverter valve is closed while the MFC remains in its setpoint position. During a fourth period 107, which constitutes a purge period, the outlet valve, diverter valve, and MFC are all closed. Period 109 begins a new series of repeated cycles, thus marking a repetition of the first four periods 101, 103, 105, and 107 described herein.

[0027] 1B, there is shown a prior art dose diversion system 170. FIG. 1B includes an inert gas line 171, a flow controller 181 (e.g., MFC), a fill volume 183, a diversion valve 185, and an outlet valve coupled to the process chamber 175.

[0028] If an inert gas flow (e.g., nitrogen (N) or argon (Ar)) is used, the inert gas flows in direction 173 in inert gas line 171 toward process chamber 175. When flow controller 181 is open (e.g., in a SP setup), precursor gas flows in direction 179 toward fill volume 183. When diverter valve 185 is open, precursor gas flows through diverter valve 185 and is diverted to the foreline (e.g., through a vacuum pump to facility waste, or diverted around process chamber 175 rather than into the process chamber). When flow controller 181 is open, or if there is a large amount of precursor gas in fill volume 183, outlet valve 187 opens and precursor gas flows into process chamber 175.

[0029] 1B and simultaneously back to FIG. 1A, those skilled in the art will recognize how the dose diversion system 170 functions. In a specific example, during a first period 101 (MFC stabilization period), the MFC (e.g., flow controller 181) flows precursor gas for 2 seconds, the signal is set to SP, and the flow of precursor gas to the diversion valve (e.g., diversion valve 185) reaches a steady state. During a second period 103 (line fill period), the MFC remains at SP flow with both the diversion valve and the outlet valve (e.g., outlet valve 187) closed (i.e., the signals sent to the diversion valve and outlet valve are both "0") to build pressure in the LCV (e.g., fill volume 183) downstream of the MFC. During a third period 105 (precursor gas flow into chamber period), the outlet valve is opened, for example, for 5 seconds, delivering gas to the chamber (e.g., process chamber 175). During the fourth period 107 (purge cycle), the MFC, the diversion valve, and the outlet valve are all closed for a purge cycle to remove the precursor gas.

[0030] Referring now to Figure 2, a line fill volume (LCV) graph 200 illustrating pressure as a function of time for the prior art dosage distribution system 170 of Figure 1B is shown. Continuing to refer to Figure 1B, Figure 2 illustrates the level of delivery pressure 201 (i.e., to the process chamber 175), the level of pressure in the LCV 209 (e.g., fill volume 183 of Figure 1B), the initial pressure and flow pulse 211 of the precursor gas immediately prior to delivery of the precursor gas to the process chamber (e.g., process chamber 175 of Figure 1B), and the level of steady-state pressure 207 also immediately prior to delivery of the precursor gas to the process chamber. The LCV graph 200 also illustrates a first period 203 during which the pressure in the LCV exceeds the steady-state delivery pressure 201, which occurs immediately prior to a second period 205 during which the outlet valve (e.g., outlet valve 187 of Figure 1B) is opened and remains open.

[0031] An ALD sequence utilizing backfill volume 183, as shown and described with reference to FIG. 1B, allows for reduced delivery time of precursor gases to process chamber 175. Additionally, an initial pressure and flow pulse 211 of precursor gases is also delivered to the chamber, both of which speed up saturation of the substrate surface with precursors. Both of these effects reduce the overall ALD cycle time. The total mass of precursor gas delivered to the process chamber is described by the following equation:

number

number

number

[0032] However, in addition to losing valuable precursor gas to the diversion process as described with respect to the dose diversion system 170 of FIG. 1B, sequencing on a set schedule also leads to fluctuations in pressure within the LCV. The pressure fluctuations are directly related to the amount of precursor gas delivered to the process chamber (because precursor gases, unlike liquids, comprise compressible materials). Furthermore, unit-to-unit variations (e.g., filling per LCV) can result in volumetric differences, flow rate differences, and valve flow coefficients (C v ), temperature differences, and other factors known to those skilled in the art. Therefore, the amount of precursor gas delivered per cycle or per hour (e.g., per week) depends on the C of the valve. v It can also vary due to changes in temperature, flow rate drift, maintenance that can change the LCV volume due to fitting configuration, and other factors. Performance variations from unit to unit (from one process chamber to another, one process station to another, or one tool to another), cycle to cycle, and hour to hour variations all directly impact the variation in deposition on substrates undergoing ALD processes. Deposition variations can lead to loss of die or even entire substrates.

[0033] Additionally, flow controllers (e.g., flow controller 181 of FIG. 1B) also have inherent response variability. Figure 3 shows a prior art response variability and ramp rate chart 300 illustrating the potential for large variations in mass flow controller (MFC) to precursor gas dosage delivered to a process chamber (e.g., process chamber 175 of FIG. 1B). The MFC variation chart is typical of those used in prior art dosage distribution systems such as that shown in FIG. 1B.

[0034] The top graph 310 shows an idealized flow setpoint command, with the MFC instantly responding from fully closed to fully at the SP level at time t1. The MFC responds similarly from fully at the setpoint level SP to fully closed at time t3. The bottom graph 330 shows the actual response to the command. At time t1, a signal "SP" is sent to the MFC, causing the MFC to open to the setpoint value SP. However, the MFC does not fully reach the SP level 303 until approximately time t2. Depending on the actual rise time of the signal (the open response time after receiving the SP signal) (e.g., depending on how long it takes the MFC to respond to the SP signal), the level 303 may actually be achieved before or after time t2, depending on the variation 301R in the actual rise time. Variation 301R shows the variation in the rise time for the MFC to fully at SP, depending on how quickly the MFC responds.

[0035] A similar situation occurs when the MFC receives a signal "0" to close at time t3. Depending on the actual fall time of the signal (the close response time after receiving the signal "0") (e.g., depending on how long it takes the MFC to respond to the "0" signal), the MFC may not fully close from level 303 until either before or after time t4. Thus, full closure of the MFC may actually be achieved before or after time t4, depending on the actual fall time variation 301F. Variation 301F shows the variation in the fall time for the MFC to fully close, depending on how quickly the MFC responds.

[0036] The variations discussed above with reference to FIG. 3 can vary significantly from MFC to MFC, even when manufactured by the same company, due to, for example, tolerances in the components used to manufacture the MFC and the age of a particular MFC. MFCs have inherent flow change time constants based on the MFC's design, which can vary from hour to hour and from unit to unit. Furthermore, each type and brand of MFC can have a different response. Even units of the same type or brand may have variations in ramp rate. In addition, hour-to-hour variations can occur within the same MFC.

[0037] Each of these variations can significantly affect the actual mass of precursor gas delivered to the process chamber. As discussed above with respect to Equation (1), the integral of the flow rate over time is the mass of the flow delivered to the chamber. As a result, for the same time and flow rate setpoint, the mass delivered will vary based on the shape and rate of the flow ramp-up and ramp-down, as discussed with reference to FIG. 3. The dose diversion system 170 of FIG. 1B attempts to overcome these limitations by eliminating MFC ramp-up variations by flowing precursor gas to a diverter for a period of time (thereby wasting precursor gas) before filling the fill volume 183 or flowing to the process chamber 175.

[0038] In the types of timed diversion-less gas dosing systems existing in the prior art, dosing can be achieved, for example, by:

[0039] Command the inlet valve to open and send a set point (SP) signal to the MFC located downstream of the inlet valve;

[0040] Pressure builds up in the LCV while the outlet valve downstream of the LCV is closed;

[0041] At a predetermined time, the outlet valves are opened to the LCV and the process chamber located downstream of the outlet valves, respectively;

[0042] Thereafter, a flow pulse is delivered to the process chamber, and the MFC then controls the flow rate of the process gas to an initial set point value for steady-state flow into the process chamber; and

[0043] The MFC flow SP remains constant throughout the remainder of the process.

[0044] The foregoing examples are provided merely as examples to provide one of ordinary skill in the art with a context for the following disclosed subject matter, and should not be considered admitted prior art.

[0045] However, in contrast to the precursor gas waste and variability described with reference to prior art dosage diversion systems and timed diversion-less gas dosing systems, the disclosed subject matter makes physical and operational modifications to the gas delivery hardware and process sequence to shorten the ALD process time, reduce process variability, and eliminate waste of specialized precursor gases, thereby reducing cost of operations (COO). For example, as described in more detail below, the disclosed subject matter eliminates MFC ramp-up and ramp-down variability by filling the LCV to a predetermined pressure, thereby allowing for variable times for filling the LCV. The variable fill times compensate for ramp variability without the need to waste precursor gas through diversion.

[0046] Furthermore, in contrast to prior art timed diversion-less gas administration systems, the disclosed subject matter provides solutions to the following significant drawbacks of prior art systems as set forth below:

[0047] As discussed above with reference to Figure 3, differences in the ramp rate of the MFC and the timing of the valves (e.g., prior art inlet and outlet valves) can result in different final pressures in the LCV, which can result in different magnitudes (e.g., volume and / or mass) of delivered dosages to the process chambers per hour and per unit. Thus, using prior art timed shunt-less gas dosing systems, one process chamber may not produce the same results on the substrate (e.g., film quality, film uniformity, and / or film thickness) as another chamber, or one chamber may produce different process results from one day to another.

[0048] There is no ability to vary the time of the pulse delivered to the process chamber, for example, the optimal length of time to achieve a preferred flow pulse (e.g., optimal LCV pressure) may be shorter or longer than the optimal time for delivering a pulse based on other dosing or purge steps.

[0049] When the outlet valve is opened, flow increases (resulting in an increased dose); the increased flow is sensed by the MFC, which attempts to correct the increased flow by closing the valve, which then increases flow when pressure equalizes. This valve movement and response of the MFC can cause temporary flow rate differences during and after administration. These differences in transient response can vary from unit to unit and / or from time to time.

[0050] The various embodiments described below provide solutions to each of the aforementioned shortcomings of the prior art in both dose diversion systems and timed diversion-less gas administration systems. Each of the advantages of the disclosed subject matter is described in more detail below.

[0051] In further overview, various embodiments of the disclosed subject matter deliver ALD precursor gas dosages to a process chamber with reduced or no precursor gas waste and reduced dosage variability, for example, compared to the dosage diversion system 170 of FIG. 1B . The reduced waste and reduced variability are achieved by using an MFC to fill a line fill volume (LCV, such as a gas accumulator capable of storing a fixed amount of gas under pressure, as defined in more detail below) with precursor gas to a predetermined pressure, maintaining the pressure in the volume, holding the MFC control valve in a set position (e.g., the MFC does not control the flow at this point while the LCV is being filled), and releasing the volume of gas to the process chamber. After the gas in the LCV is released to the process chamber, precursor gas flow control is returned to the MFC. Thus, various embodiments of the disclosed subject matter eliminate the need for diversion, as described above, currently used to stabilize flow by flowing precursor gas to initially divert gas from the process chamber. As a result, precursor gas waste is eliminated. These concepts are described in more detail in various embodiments below.

[0052] The terms "precursor gas" and "ALD sequence" or "ALD process" are used herein to more fully describe the novel concepts of the disclosed subject matter, but are not intended to be limiting. For example, upon reading and understanding the disclosed subject matter, one of ordinary skill in the art will recognize that the described concepts can be used with any process gas (e.g., other than or in addition to precursor gases) or any process (e.g., other than an ALD process, including processes such as chemical vapor deposition (CVD) or physical vapor deposition (PVD) in gas-phase processes).

[0053] 4A shows an example of a process sequence timing chart 400 according to various embodiments of the disclosed subject matter. FIG. 4B shows an example of a diversion-less gas dosage system 440 according to various embodiments of the disclosed subject matter. As one of ordinary skill in the art will recognize upon reading and understanding the disclosed subject matter, the diversion-less gas dosage system 440 does not rely on diversion (and therefore waste) of process gases used within the processing chamber.

[0054] Referring simultaneously to both Figures 4A and 4B, Figure 4A is shown to include separate diagrams for an outlet valve timing signal 410, an inlet valve timing signal 430, an LCV pressure sensor signal 450, and an MFC (e.g., flow controller) timing signal 470. The outlet valve timing signal 410 and the inlet valve timing signal 430 each indicate a "0" and a "1" for the valve's closed and open positions, respectively. The LCV pressure sensor signal 450 indicates the actual pressure within the LCV. The MFC timing signal 470 indicates a closed position "0" and a set point value "SP," respectively. Figure 4B is shown to include a gas inlet 447, an inlet valve 449, a flow controller 453 (e.g., MFC), a line fill volume (LCV) 455, a pressure sensor 457 coupled to the LCV 455, and an outlet valve 459 coupled to the process chamber 445. When inlet valve 449 and flow controller 453 are open (e.g., when flow controller 453 is set to SP), precursor gas flows in direction 451 toward LCV 455. If an inert gas flow (e.g., nitrogen (N) or argon (Ar)) is used, the inert gas flows in inert gas line 441 in direction 443 toward process chamber 445. If an inert gas flow is not used, inert gas line 441 may not be needed and thus may be considered optional.

[0055] LCV455 can be formed from any number of ultra-high purity, non-permeable materials. For example, in one particular exemplary embodiment, LCV455 can be considered a type of accumulator chamber and can be formed from stainless steel (e.g., 316L stainless steel). In another particular exemplary embodiment, LCV455 can be formed from various high-performance alloys (also known as superalloys) known in the art. These high-performance alloys include, for example, Inconel® (available from various sources, including Inco Alloys International, Inc., Huntington, West Virginia, USA) or Hastelloy® (available from various sources, including Haynes Stellite Company, Kokomo, Indiana, USA and Union Carbide Corporation, New York, New York, USA). Such materials, or stainless steel materials or other ultra-high purity, non-permeable materials, can be electropolished, for example, to a surface roughness value of Ra of less than about 0.5 μm or less than about 0.1 μm, or even less depending on the given process. Furthermore, upon reading and understanding the disclosed subject matter, those skilled in the art will recognize that the type of precursor gas used can also affect the type of material from which the LCV 455 (and other components) is formed. Additionally, while the LCV 455 is shown as a separate volume, in certain embodiments, the LCV 455 can include the volume of the lines carrying the process gases themselves. The LCV 455 can be designed to accommodate various gas volumes for a given process or chamber size, for example, but in certain exemplary embodiments, the LCV 455 can have a volume of about 0.03 liters to about 0.3 liters. Upon reading and understanding the disclosed subject matter, those skilled in the art will recognize the specific volumes for the LCV 455 that may be required.

[0056] Referring again to FIG. 4A and with continued reference to FIG. 4B, a first period 401 includes a period during which the inlet valve 449 is open. The flow controller 453 is also opened to provide an actual flow 417 of precursor gas, which reaches the setpoint SP value. The pressure level within the LCV 455 is monitored from the received value of the LCV pressure sensor signal 450 from the pressure sensor 457. The inlet valve 449 remains open while the pressure ramps 411 to a predetermined pressure 413. During this first period 401, the LCV 455 is "filling" to the predetermined pressure level. Once the LCV 455 reaches the predetermined pressure (determining the end of the first period 401), the inlet valve 449 is closed. With the inlet valve 449 closed, there is no flow into the flow controller 453. Therefore, the flow controller 453 can remain open or close (it is closed at the end of the first period, as shown in the process sequence timing chart 400). As will be apparent to one skilled in the art, if the flow controller 453 remains open and no gas is flowing therethrough, an alarm set to indicate a "no flow" condition may be overridden, for example, by an accompanying process recipe. In embodiments, the flow controller 453 itself switches control modes between controlling pressure and controlling flow. As a result, when controlling pressure, a "false flow signal" is not generated. Such modes are described in more detail below.

[0057] The second period 403 can be considered the time during which the LCV 455 is fully charged to a predetermined pressure level. In certain exemplary embodiments, the absolute pressure may range, for example, from about 200 Torr to about 2000 Torr. However, the actual pressure may depend on various factors, such as the particular process or process chamber volume. As discussed above and shown in the process sequence timing chart 400, the flow controller 453 can remain open or close anywhere within the latter portion 421 of the second period 403 (the difference between the second period 403 and the first period 401).

[0058] During the third time period 405, in one embodiment, the inlet valve 449 is reopened and, if the flow controller 453 was closed, it is reopened to the actual flow 417. The outlet valve 459 is opened, thereby releasing precursor gas from the LCV 455 and into the process chamber 445. As precursor gas is released from the LCV 455, a flow pulse 419 is delivered to the process chamber 445, causing the pressure 415 to decay to a steady-state level, and continued flow to the process chamber is controlled by the MFC at a setpoint value for the actual flow 417. However, various embodiments and differences to the described operation are described in more detail below.

[0059] During the fourth period 407, the system is purged. The entire cycle, including any or all of the previous periods 401, 403, 405, and 407, can be repeated in a repeat period 409. The pressure of the LCV 455 is undefined at this point. The same precursor gas or a different precursor gas can be used during the repeat period 409.

[0060] In various embodiments, depending on whether the MFC is in a flow control mode or based on a valve position control mode, the valve may be set to a known position (i.e., a physically measured opening distance (which may be based on a capacitive position sensor, an inductive position sensor, or other type of position sensor), for example, based on valve position feedback based on previous MFC history or a calibration table. The MFC may have a map of valve position versus flow rate and pressure. Thus, this operation constitutes a type of open-loop control, where the valve is opened to position "x" at an upstream pressure P1 and a downstream pressure P2. The flow rate may then be read from a calibration table. If the flow is a choked flow (as would be understood by one skilled in the art), only the upstream pressure P1 is important. The choked flow may be determined by values ​​of P1 and P2, which may be built into a calibration table. The calibration table may be created and revised by comparing the calibration table to the actual flow signal any time the MFC is in a flow control mode. Thus, operating the diversion-less gas dosing system 440 during the first time period 401 When activated, the valves may be driven to positions for the steady-state flow desired for the actual flow 417 of precursor gas, as shown in the calibration table, and left in that position until the flow rate stabilizes after the flow pulse 419. In this embodiment, the inlet valve 449 is closed based on the LCV pressure, but the control valve is not moved. Thus, during the first period 401, the MFC can operate in either flow control mode or valve position control mode. After the first period 401, entering the second half of the second period 403, the MFC operates in valve position control mode. During the third period 405, the MFC may transition from valve position control mode to flow control mode after the flow signal stabilizes (e.g., after flow pulse 419; the mode change transition generally occurs only after steady-state flow is achieved). Furthermore, the mode in which the MFC is used may not need to change every cycle (e.g., always valve position control). For example, the MFC valve position may be calibrated periodically (e.g., daily) by operating the MFC in flow control mode and then checking / revising the valve position calibration.This operation allows the MFC to operate with faster valve position control during processing and to be recalibrated when the module or process chamber is idle. The MFC can also be recalibrated using an inert gas, which can be converted to precursor gas within the MFC to avoid wasting precursor gas.

[0061] The process sequence timing diagram 400 of Figure 4A can be used in other embodiments of a diversion-less gas dosing system using the same sequence or with slight modifications. Referring now to Figure 4C, another example of a diversion-less gas dosing system 460 according to various embodiments of the disclosed subject matter is shown.

[0062] 4C is shown to include a first gas inlet 467, a first inlet valve 469, a first flow controller 473 (e.g., MFC), an optional controller outlet valve 474, a line fill volume (LCV) 475, a pressure sensor 477 coupled to the LCV 475, and an outlet valve 479 coupled to the process chamber 465. FIG. 4C is also shown to include an additional inlet valve and flow controller stage comprising a second gas inlet 481 and a second flow controller 487. When either of the flow controllers 473, 487 and their respective inlet valves 469, 483 are open (e.g., in a SP setting for the flow controllers), one or more precursor gases flow in directions 471, 485, respectively, toward the LCV 475. If an inert gas flow (e.g., nitrogen (N) or argon (Ar)) is used, the inert gas flows in the inert gas line 461 in direction 463 toward the process chamber 465. 4B, inert gas line 461 can be considered optional if inert gas is not used. Furthermore, as will be recognized by those skilled in the art upon reading and understanding the disclosed subject matter, each of the components in FIG. 4C can be the same or identical to the similar components shown in FIG. 4B.

[0063] Although the diversion-less gas dosing system 460 shows one additional inlet valve and flow controller stage, upon reading and understanding the disclosed subject matter, those skilled in the art will recognize that any number of additional inlet valve and flow controller stages can be added to the diversion-less gas dosing system 460 and still be considered within the scope of the disclosure provided herein. Furthermore, modifications to the system, such as, for example, the placement of an inlet valve and a flow controller relative to one another, are considered part of the present disclosure. That is, the inlet valve may be located downstream of the flow controller and still be considered within the scope of the present disclosure (with appropriate modifications to the process sequence timing chart 400 of FIG. 4A , if necessary). Additionally, while only a single LCV is shown, this should not be considered a limitation. One or more additional LCV chambers can be added and still be within the scope of the disclosed subject matter.

[0064] 4C, two or more flow controllers can flow into a single line fill volume. The flow of process gas can be stopped at both (or more than two) flow controllers simultaneously at the same pressure, or the LCV can be filled, for example, sequentially, with one flow controller followed by another (including more than two flow controllers) to produce a desired mixture of gases in a desired ratio and pressure for release into the process chamber.

[0065] 5, the LCV can be heated to increase the condensation pressure of the contained gas, such that, for example, a low vapor pressure gas such as tungsten hexafluoride (WF) first pressurizes the LCV 475 to, for example, 0.5 bar (about 375 Torr), and then the gas in the LCV 475 is heated to about 60° C. and pressurized with Ar to about 2 bar (about 1500 Torr). In certain exemplary embodiments, after the LCV 475 is pressurized to about 375 Torr with WF, the optional controller outlet valve 474 can be closed to isolate the first flow controller 473 from the pressure in the LCV 475.

[0066] Figure 4D shows an example of a self-calibrating flow meter 490 that can be used in conjunction with the split-flow-less gas dosing systems 440, 460 of Figures 4B and 4C. The self-calibrating flow meter 490 is shown to include a flow meter 491, a first pressure sensor 493, a second pressure sensor 495, and a flow control valve 497 with a position sensing device (not explicitly shown).

[0067] In various exemplary embodiments, the flow meter 491 comprises, for example, a thermal mass flow meter, a pressure-based flow meter (e.g., using an orifice to create a pressure drop for the transported fluid), a decaying velocity flow meter, or other types of flow meters known in the relevant art. The flow meter 491 may be considered an optional element in certain embodiments. Those skilled in the art will recognize that other means can be used to determine the volumetric flow rate and / or mass flow rate through the self-calibrating flow meter 490. For example, the volumetric flow rate of the fluid can be determined by measuring the differential pressure across the flow control valve 497 from pressure sensors 493, 495. If the temperature, pressure, and thermodynamic properties of the fluid are known, the mass flow rate can also be determined. Such arrangements using temperature sensors or thermometers are described in more detail below with reference to Figures 4F and 4G. The pressure sensors 493, 495 may be the same as or similar to the pressure sensors 457, 477 described above with reference to Figures 4B and 4C.

[0068] Pressure sensors 493, 495 may comprise various types of pressure sensors known in the art, for example, based on piezoresistive strain gauge technology, capacitive pressure sensing technology, electromagnetic pressure sensing technology, piezoelectric pressure sensing technology, and other technologies known in the relevant art.

[0069] The flow control valve 497 may comprise one of various types of throttle valves (e.g., ball valves, gate valves, butterfly valves, or other control valves), piezo valves, or other types of fluid control valves known in the relevant art. The valve may be manually controlled or automatically controllable (e.g., pneumatically, electrically, or hydraulically controlled). The position sensing device described above is used to measure the distance or amount that the flow control valve 497 is open.

[0070] During operation, the valve positions are calibrated to pressures P1 and P2 as indicated by pressure sensors 493, 495, respectively, and a flow standard device (not explicitly shown, but understandable to those skilled in the art). Flow meter 491 may also be calibrated according to readings from a flow standard device, if used.

[0071] The self-calibrating flow meter 490 can operate in at least two modes. In a first mode of the self-calibrating flow meter 490, the position of the flow control valve 497 is based on readings and calibration data from the two pressure sensors 493, 495. The first mode can be used to provide a fast response time (e.g., less than about 100 milliseconds or less than about 10 milliseconds). In a second mode of the self-calibrating flow meter 490, control of the flow control valve 497 is based on feedback from the flow meter 491 (e.g., an indicated volumetric or mass flow rate). For embodiments in which the self-calibrating flow meter 490 includes an MFC, the second control mode can have a higher level of accuracy and / or precision than the first control mode. Upon reading and understanding the disclosed subject matter, one skilled in the art will understand when it may be advantageous to use either the first mode or the second mode in a given application.

[0072] The self-calibrating flow meter 490 can be used in series with or in place of the flow controllers 453, 473, 487 of Figures 4B and 4C. Additionally, a second pressure sensor 495 can be used in conjunction with or in place of the pressure sensors 457, 477 of Figures 4B and 4C. Furthermore, the self-calibrating flow meter 490 can be calibrated periodically or continuously as described above.

[0073] 4E-4G illustrate examples of other self-calibrating flow meters that can be used in conjunction with the split-flow-less gas dosing systems of FIGS. 4B and 4C. For example, FIG. 4E illustrates another exemplary embodiment of a self-calibrating flow meter 490 that uses a differential pressure sensor 492 rather than the pressure sensors 493, 495 of FIG. 4D. The differential pressure sensor 492 has a first leg coupled upstream of a flow control valve 497 and a second leg coupled downstream of the flow control valve 497. The differential pressure sensor 492 can increase the accuracy of the pressure difference between the upstream and downstream pressures. Additionally, as discussed above, the flow meter 491 can be considered an optional element in certain embodiments.

[0074] FIG. 4E is also shown to include a pressure sensor 496 located upstream of flow control valve 497. While not explicitly shown, in other embodiments, pressure sensor 496 may be located downstream of flow control valve 497. Pressure sensor 496 may be the same as or similar to, for example, one or both of pressure sensors 493, 495 of FIG. 4D. Depending on its location, pressure sensor 496 can be used to determine the inlet or outlet pressure of flow control valve 497 for gas flowing through self-calibrating flow meter 490. For example, differential pressure sensor 492 may read a 260 Torr (approximately 5 psig) difference between the upstream and downstream pressures on either side of flow control valve 497. However, if a system has a 520 Torr (approximately 10 psig) inlet and 260 Torr outlet pressure versus a 780 Torr (approximately 15 psig) inlet and 520 Torr outlet pressure, the actual flow rate will be different. Furthermore, as known to those skilled in the art, the mass of gas differs at various pressures. As a result, both the mass flow rate and the volumetric flow rate can vary substantially. Additional embodiments are described below with reference to Figure 4G.

[0075] Those skilled in the art will appreciate that the differential pressure sensor 492 senses the differential pressure between two portions of a fluid flow path using, for example, a transducer. The transducer can then convert the differential pressure into a proportional output. In another example, the differential pressure sensor 492 uses a flexible diaphragm in close proximity to an electrode to sense the differential pressure. For example, a positive pressure bends the diaphragm toward the electrode, thereby increasing the value of the capacitance between the diaphragm and the electrode. A decrease in pressure moves the diaphragm away from the electrode, thereby decreasing the capacitance. A sensor coupled to each side of the sensor measures the difference in capacitance caused by the two pressures on each side of the diaphragm. other Differential pressure sensors or gauges of various types are known. Furthermore, as known to those skilled in the art, differential pressure is not measured relative to a particular reference pressure.

[0076] FIG. 4F illustrates another exemplary embodiment of a self-calibrating flow meter 490 that can be used in conjunction with the split-flow-less gas dosing systems 440, 460 of FIGS. 4B and 4C. The self-calibrating flow meter 490 is shown to include a flow meter 491, a first pressure sensor 493, a second pressure sensor 495, and a flow control valve 497 with a position sensing device (not explicitly shown). FIG. 4F also illustrates a temperature sensor 494. While the temperature sensor 494 is shown coupled to the flow control valve 497, the temperature sensor may be coupled proximate to the flow control valve 497, either upstream or downstream of the flow control valve 497. Various types of temperature sensors and temperature gauges are known in the art. As noted above, the flow meter 491 may be considered an optional element in certain embodiments.

[0077] Additionally, as known to those skilled in the art, various types of materials expand and contract with temperature changes. With continued reference to FIG. 4F , if the ambient temperature where flow control valve 497 is located changes, or if self-heating of the piezo stack (discussed above) changes temperature, the relative positions of the components, and consequently the reported output values ​​of the affected components, may change. Additionally, for example, the flow paths upstream and / or downstream of flow control valve 497 may change size and / or shape with temperature changes. These size and shape changes may affect the flow characteristics of the fluid flowing through the system. Thus, the position of flow control valve 497 that delivers a particular flow (e.g., a predetermined flow value) may change based on the flow control valve 497 and the surrounding flow path temperatures. Furthermore, gas properties change based on temperature. For at least these reasons, to achieve a high level of calibration accuracy, the temperature of the flow path region in and near flow control valve 497 may be monitored and fed back to an algorithm for flow control valve 497 in this embodiment.

[0078] FIG. 4G illustrates another exemplary embodiment of a self-calibrating flow meter 490 that also uses a differential pressure sensor 492 rather than the pressure sensors 493, 495 of FIGS. 4D and 4F. As described above with reference to FIG. 4E, the differential pressure sensor 492 has a first leg coupled upstream of a flow control valve 497 and a second leg coupled downstream of the flow control valve 497. The differential pressure sensor 492 may be the same as or similar to the differential pressure sensor 492 described with reference to FIG. 4E. Additionally, as described above, the flow meter 491 may be considered an optional element in certain embodiments. As described above, the differential pressure sensor 492 can increase the accuracy of the pressure difference between the upstream pressure and the downstream pressure.

[0079] Like Figure 4F above, Figure 4G is also shown to include a temperature sensor 494. Although temperature sensor 494 is shown coupled to flow control valve 497, the temperature sensor may be coupled proximate to flow control valve 497, either upstream or downstream of flow control valve 497. Temperature sensor 494 may be the same as or similar to temperature sensor 494 of Figure 4F.

[0080] Additionally, FIG. 4G is shown to include a pressure sensor 496 located upstream of flow control valve 497. Although not explicitly shown, in other embodiments, pressure sensor 496 may be located downstream of flow control valve 497. Pressure sensor 496 may be the same as or similar to, for example, pressure sensors 493, 495 of FIG. 4D or one or both of the pressure sensors of FIG. 4E. As discussed above with reference to FIG. 4E, depending on location, pressure sensor 496 may be used to determine the inlet pressure or outlet pressure of flow control valve 497 for gas flowing through self-calibrating flow meter 490. Pressure sensor 496, differential pressure sensor 492, and temperature sensor 494 may, for example, send respective signals to a central controller or processor (not shown) to calculate the actual mass flow rate and / or volumetric flow rate both upstream and downstream of flow control valve 497 based on the measured temperature and measured pressure.

[0081] 5, an example vapor pressure graph 500 including an LCV two-stage pressure adjustment in accordance with various embodiments of the disclosed subject matter is shown. Vapor pressure graph 500 shows a WF vapor curve of pressure as a function of temperature, with the critical point 505 of the WF gas also shown. (Those skilled in the art will recognize that WF, or most other molecules, have thermodynamic properties that can be considered, for example, not to exceed the critical point 505.) Furthermore, those skilled in the art will recognize that the WF on the right side 503 of the vapor pressure graph is in the gas phase, while the WF on the left side 501 of the curve is in the liquid phase. According to various embodiments, an example of a two-stage pressurization can include: (1) step 1 (operation 507)—pressurizing WF gas in an LCV to about 0.53 bar (about 400 Torr) at about room temperature (about 20° C.) and increasing the temperature and pressure to move the WF gas along line 509 on the gas-phase pressure-temperature curve; and (2) step 2 (operation 511)—adding argon (Ar) and increasing the pressure of the gas mixture to about 2 bar (about 1500 Torr) at a temperature of about 60° C.

[0082] As a result, multiple gases can be mixed in or before the LCV, pressurizing (and optionally heating) the LCV to provide a high-pressure reservoir of gases that can be rapidly delivered to the process chamber, thus accelerating the ALD process. The volume of the LCV and associated piping can be calibrated so that the rate of rise during flow into the LCV can provide an independent measure of MFC flow rate, thereby providing a means to calibrate the MFCs during their lifetime. For example, multiple mass flow controllers can be used with multiple gases (e.g., WF6 and H2 at different volumes and mixing ratios). Each change to a specific gas or mixture of gases, as well as changes to various process recipes for sequential filling of the LCVs, can be stored within the process tool or in a device configured to execute commands on the process tool, as described in more detail below. In other embodiments, each of the multiple mass flow controllers can be separately coupled to a different LCV. Additionally, each of the different LCVs can be coupled to a single outlet valve, thus controlling flow from all LCVs to the process chamber substantially simultaneously. In other embodiments, each of the different LCVs may be separately coupled to multiple outlet valves, with one outlet valve for each LCV.

[0083] As described above, according to various embodiments presented herein, the diverter valve 185 of FIG. 1B is eliminated, along with the piping connections from the diverter valve to the vacuum source and associated hardware. Instead, an inlet valve is added, or an existing valve is reused, for use in delivering one or more precursors to the process chamber. Furthermore, a pressure sensor is added, or an existing pressure sensor is reused, for use as a variable to control the process sequence (e.g., process sequence timing chart 400 of FIG. 4A).

[0084] Thus, several advantages over the prior art include, for example, no wastage of valuable precursor gas by not bypassing the process chamber, thereby reducing cost of ownership and consumables for the process tool owner. Diversion valves and associated hardware are not required, resulting in lower costs. Furthermore, the concomitant ability to package the components of the shunt-less system described herein in a smaller space is improved over prior art shunt systems. Because LCV pressurization is based on pressure measurement and not time, as is currently used under existing technology, differences in MFC ramp rates and curve shapes (e.g., see Figure 3) are compensated for by variable time for LCV fill, thereby reducing precursor gas delivery variations to the substrate, resulting in improved uniformity within a substrate, improved substrate-to-substrate consistency, and improved batch-to-batch consistency. Therefore, precursor gas shunt valves and diversion to the foreline are not required or needed in any form.

[0085] 4A-4C and 5, can be configured to operate in at least three distinct modes: (1) flow control mode—the nominal mode of the MFC; (2) pressure control mode—the MFC controls the LCV to a pressure determined based on a feedback loop from a pressure sensor; and (3) hold mode—the MFC uses control valve position feedback to hold the control valve within the MFC (e.g., move the control valve to a given position, initiate precursor gas flow, and then adjust the flow rate; the control valve can also be set to return to a predetermined position for a given flow rate, thereby limiting the rise time for open-loop control). These three different modes can utilize firmware and / or software modifications to the MFC or firmware / software external to the MFC and controlling the MFC.

[0086] As described above, the operation of the inlet and outlet valves, pressure sensors, and MFCs are coordinated to perform a sequential process that may be implemented in tool-level or system-level firmware and / or software.

[0087] The methods and various process recipes as described above can be executed on various types of devices, as described in more detail below. The various timing sequences and / or thermodynamic properties can be stored as algorithms or in look-up tables on various types of devices known in the art. The devices include, for example, computers or microprocessors, dedicated processors such as field programmable gate arrays (FPGAs), or application specific integrated circuits (ASICs), programmed in software, firmware, or as hardware implementations, and have one or more aspects of the subject matter disclosed above.

[0088] Certain embodiments or process recipes described herein may be implemented using various types of logic or multiple components, modules, or mechanisms. A module may comprise either a software module (e.g., code embodied on a machine-readable medium or in a transmission signal) or a hardware module. A "hardware module" is a tangible unit capable of performing specific operations and may be configured or arranged in a specific physical manner. In various embodiments, one or more hardware modules of one or more computer systems (e.g., a standalone computer system, a client computer system, or a server computer system) or a process tool or computer system (e.g., a processor or group of processors) may be configured by software (e.g., an application or application portion) as a hardware module that operates to perform specific operations described herein.

[0089] In some embodiments, a hardware module may be implemented mechanically, electronically, or any suitable combination thereof. For example, a hardware module may include dedicated circuitry or logic permanently configured to perform specific operations. For example, a hardware module may be a dedicated processor such as an FPGA or ASIC.

[0090] A hardware module may also include programmable logic or circuitry that is temporarily configured by software to perform specific operations. For example, a hardware module may include software contained within a general-purpose processor or other programmable processor. It should be understood that the decision whether to implement a hardware module mechanically, with dedicated permanently configured circuitry, or with temporarily configured circuitry (e.g., configured by software) may be determined by cost and time considerations.

[0091] Thus, the phrase "hardware module" should be understood to encompass a tangible entity that is physically constructed, permanently configured (e.g., hardwired), or temporarily configured (e.g., programmed) to operate in a particular manner or to perform particular operations described herein. As used herein, a "hardware-implemented module" refers to a hardware module. Considering embodiments in which the hardware modules are temporarily configured (e.g., programmed), each of the hardware modules need not be configured or instantiated at any one time. For example, if a hardware module comprises a general-purpose processor configured by software to be a special-purpose processor, the general-purpose processor may be configured as different special-purpose processors (e.g., comprising different hardware modules) at different times. Thus, software may, for example, configure a processor to configure a particular hardware module at one time and to configure a different hardware module at a different time.

[0092] Hardware modules can provide information to and receive information from other hardware modules. Thus, the described hardware modules can be considered communicatively coupled (e.g., to execute one or more process recipes). When multiple hardware modules are present simultaneously, communication can be achieved through signal transmission (e.g., via appropriate circuits and buses) between two or more hardware modules. In embodiments in which multiple hardware modules are configured or instantiated at different times, communication between such hardware modules can be achieved, for example, through the storage and retrieval of information in a memory structure to which the multiple hardware modules have access. For example, one hardware module can perform an operation and store the output of that operation in a communicatively coupled memory device. Another hardware module can then later access the memory device and retrieve and process the stored output. Hardware modules can also initiate communication with input or output devices and operate on resources (e.g., collections of information).

[0093] The various operations of the example methods and process recipes described herein may be performed, at least in part, by one or more processors that are temporarily configured (e.g., by software) or permanently configured to perform the associated operations. Whether temporarily or permanently configured, such processors may constitute processor-implemented modules that operate to perform one or more operations or functions described herein. As used herein, a "processor-implemented module" refers to a hardware module that is implemented using one or more processors.

[0094] Similarly, the methods and process recipes explicitly or implicitly described herein may be at least partially processor-implemented, where a processor is an example of hardware. For example, at least some of the operations of a method may be performed by one or more processors or processor-implemented modules. Furthermore, one or more processors may also operate to support performance of associated operations in a "cloud computing" environment or as "software as a service" (SaaS). For example, at least some of the operations may be performed by a group of computers (as examples of machines including processors), and these operations are accessible via a network (e.g., the Internet) and one or more appropriate interfaces (e.g., application program interfaces (APIs)).

[0095] The performance of a particular operation may reside within a single machine (e.g., a process tool) as well as be distributed among one or more processors spread across multiple machines. In some embodiments, one or more processors or processor-implemented modules may be located in a single geographic location (e.g., within a home environment, an office environment, a server farm, or a fabrication facility (fab)). In other embodiments, one or more processors or processor-implemented modules may be distributed across multiple geographic locations.

[0096] As used herein, the term "or" may be interpreted in an inclusive or exclusive sense. Additionally, other embodiments will be understood by those skilled in the art based on reading and understanding the present disclosure provided. Furthermore, those skilled in the art will readily understand that various combinations of the techniques and examples provided herein may all be applied in various combinations.

[0097] Throughout this specification, multiple instances may implement components, operations, or structures described as a single instance. While individual operations of one or more methods are shown and described as separate operations, one or more of the individual operations may be performed simultaneously, and unless otherwise noted, the operations do not necessarily have to be performed in the order shown. Structures and functions presented as separate components in example configurations may be implemented as combined structures or components. Similarly, structures and functions presented as single components may be implemented as separate components. These and other variations, modifications, additions, and improvements are within the scope of the subject matter described herein.

[0098] Although various embodiments are described separately, these separate embodiments are not intended to be considered independent techniques or designs. As indicated above, each of the various portions may be interrelated, and each may be used separately or in combination with other embodiments of the disclosed subject matter described herein. For example, while various embodiments of methods, operations, systems, and processes have been described, these methods, operations, systems, and processes may be used separately or in various combinations.

[0099] As a result, many modifications and variations are possible, as will be apparent to those skilled in the art upon reading and understanding the disclosure provided herein. Functionally equivalent methods and devices within the scope of the present disclosure, in addition to those enumerated herein, will be apparent to those skilled in the art from the foregoing description. Portions and features of some embodiments may be included in, or substituted for, portions and features of other embodiments. Such modifications and variations are intended to be included within the scope of the appended claims. Accordingly, the present disclosure is to be limited only by the terms of the appended claims, along with the full scope of equivalents to which such claims are entitled. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting.

[0100] The Abstract of the present disclosure is provided to enable the reader to quickly ascertain the nature of the technical disclosure. The Abstract is submitted with the understanding that it will not be used to interpret or limit the scope of the claims. In addition, in the foregoing Detailed Description, it can be understood that various features may be grouped together in a single embodiment for the purpose of streamlining the disclosure. The method of the disclosure should not be construed as limiting the scope of the claims. Accordingly, the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment.

[0101] The following numbered examples include embodiments of the disclosed subject matter: Example 1: In one embodiment, the disclosed subject matter includes a diversion-less gas dosing system. The diversion-less gas dosing system includes a process gas inlet pneumatically coupled to an inlet valve, a flow controller pneumatically coupled to the inlet valve, and a line fill volume (LCV) pneumatically coupled downstream of the inlet valve and the flow controller. The LCV receives an initial single dose of process gas. A pressure sensor is coupled to the LCV to determine a pressure level within the LCV. An outlet valve is pneumatically coupled downstream of the LCV. The outlet valve is pneumatically coupled to a process chamber downstream of the outlet valve. The flow controller controls the flow of process gas to the process chamber independently of the inlet valve and is positioned to substantially maintain the flow at a predetermined set point when the outlet valve is open. The diversion-less gas dosing system is time-independent with respect to the magnitude of the initial single dose of process gas.

[0102] Example 2: The system of Example 1, further comprising an inert gas line pneumatically coupled to be downstream of the outlet valve, the inert gas line further coupled to the process chamber.

[0103] Example 3: The system of either Example 1 or Example 2, wherein the LCV is an accumulator chamber.

[0104] Example 4: The system of any one of the preceding examples, wherein no diversion valves are used and no diversion of precursor gas to the foreline occurs within the gas dosage system.

[0105] Example 5: The system of any one of the preceding examples, wherein the determination of the initial dose of process gas is based solely on the determined pressure level in the LCV, and not on the time required to fill the LCV to the initial dose level of the process gas.

[0106] Example 6: The system of any one of the preceding examples, wherein the flow controller is coupled downstream of the inlet valve.

[0107] Example 7: The system of any one of the preceding examples, wherein the ramp-up and ramp-down rates of the flow controller are compensated by the determined pressure level in the LCV.

[0108] Example 8: The system of any one of the preceding examples, wherein the shape of the ramp curve of the flow controller is compensated by the determined pressure level in the LCV.

[0109] Example 9: The system of any one of the preceding examples, wherein the flow controller operates in at least one of three modes selected from a flow control mode, wherein the flow controller is configured to control the flow rate of the process gas; a pressure control mode, wherein the flow controller is configured to control the LCV to a determined pressure in the LCV based on a feedback loop from a pressure sensor; and a hold mode, wherein the flow controller holds the control valve in the flow controller based on position feedback of the control valve.

[0110] Example 10: The system of any one of the preceding examples, wherein the outlet valve remains closed until the pressure sensor indicates that the pressure level in the LCV is at a predetermined level.

[0111] Example 11: The system of Example 10, wherein a determination that the pressure sensor indicates that the pressure level in the LCV is at a predetermined level indicates that an initial single dose of process gas has filled the LCV.

[0112] Example 12: The system of example 10, wherein the outlet valve is configured to open after the pressure sensor indicates that the pressure level in the LCV is at a predetermined level.

[0113] Example 13: The system of Example 12, wherein the initial single dose of process gas is delivered to the process chamber with a flow pulse after the outlet valve opens.

[0114] Example 14: The system of any one of the preceding examples, wherein at least the inlet valve remains open until the pressure sensor indicates that the pressure level in the LCV is at a predetermined level. After the pressure level in the LCV is at the predetermined level, the inlet valve is closed.

[0115] Example 15: The system of any one of the preceding examples, further comprising a self-calibrating flow meter. The self-calibrating flow meter includes a flow control valve and a second pressure sensor located upstream of the flow control valve. Both the flow control valve and the second pressure sensor are located downstream of the flow controller.

[0116] Example 13: The self-calibrating flow meter of Example 15, further comprising a third pressure sensor located downstream of the flow control valve and upstream of the LCV.

[0117] Example 17: The self-calibrating flow meter of Example 16, wherein the self-calibrating flow meter operates in at least one of two modes selected from modes including: a first mode, wherein the position of the flow control valve is based on readings from at least one of the pressure sensor, the second pressure sensor, and the third pressure sensor, and calibration data of the flow controller, the first mode being configured to provide a faster response time than the second mode; and a second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode being configured to provide at least one of a higher level of accuracy and precision than the first mode.

[0118] Example 18: The system of any one of the preceding examples, further comprising a self-calibrating flow meter. The self-calibrating flow meter includes a flow control valve and a differential pressure sensor coupled across the flow control valve. The differential pressure sensor has a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve.

[0119] Example 19: The self-calibrating flow meter of Example 18, further comprising a temperature sensor coupled upstream of the LCV proximate to the flow control valve.

[0120] Example 20: The self-calibrating flow meter of Example 19, wherein the self-calibrating flow meter operates in at least one of two modes selected from modes including: a first mode, wherein the position of the flow control valve is based on readings from at least one of a pressure sensor, a differential pressure sensor, and a temperature sensor, and calibration data of the flow controller; the first mode provides a faster response time than the second mode; and a second mode, wherein control of the flow control valve is based on feedback received from the flow controller; and the second mode provides at least one of a higher level of accuracy and precision than the first mode.

[0121] Example 21: In one embodiment, the disclosed subject matter includes an apparatus for supplying a precursor gas. The apparatus includes a precursor gas inlet pneumatically coupled to an inlet valve, a flow controller pneumatically coupled downstream of the inlet valve, and a line fill volume (LCV) pneumatically coupled downstream of the flow controller. The LCV is filled with an initial single dose of precursor gas. A pressure sensor is coupled to the LCV and determines a pressure level within the LCV. The initial single dose of precursor gas is determined based on the pressure level within the LCV. An outlet valve is pneumatically coupled downstream of the LCV. The outlet valve is positioned to be pneumatically coupled to a process chamber downstream of the outlet valve. The outlet valve is further positioned to open to release the initial single dose of precursor gas into the process chamber after the pressure level of the LCV reaches a predetermined value. The flow controller controls the flow of precursor gas to the process chamber independently of the inlet valve and substantially maintains the flow at a predetermined set point when the outlet valve is open. The apparatus is time-independent with respect to the size of the initial single dose of process gas.

[0122] Example 22: The apparatus of example 21, wherein the LCV is a gas accumulator.

[0123] Example 23: The apparatus of either example 21 or example 22, wherein no diversion valves are used and no diversion of precursor gas to the foreline occurs within the gas dosing device.

[0124] Example 24: The apparatus according to any one of Examples 21 to 23, wherein the flow controller comprises a mass flow controller.

[0125] Example 25: The apparatus of any one of Examples 21-24, wherein the flow controller operates in at least one of three modes selected from a flow control mode, where the flow controller controls a flow rate of the precursor gas; a pressure control mode, where the flow controller controls the LCV to a determined pressure in the LCV based on a feedback loop from the pressure sensor; and a hold mode, where the flow controller is configured to hold the control valve in the flow controller based on position feedback of the control valve:

[0126] Example 26: The apparatus of any one of Examples 21 to 25, wherein the outlet valve remains closed until the pressure sensor indicates that the pressure level in the LCV is at a predetermined level.

[0127] Example 27: The apparatus of example 26, wherein the outlet valve is opened after the pressure sensor indicates that the pressure level in the LCV is at a predetermined level.

[0128] Example 28: The apparatus of any one of Examples 21-27, wherein at least the inlet valve is configured to remain open until the pressure sensor indicates that the pressure level in the LCV is at a predetermined level, after which the inlet valve is closed.

[0129] Example 29: The apparatus of any one of Examples 21-28, further comprising a self-calibrating flow meter including a flow control valve and a second pressure sensor located upstream of the flow control valve, both of which are located downstream of the flow controller.

[0130] Example 30: The self-calibrating flow meter of Example 29, further comprising a third pressure sensor located downstream of the flow control valve and upstream of the LCV.

[0131] Example 31: The self-calibrating flow meter of Example 30, wherein the self-calibrating flow meter operates in at least one of two modes selected from modes including: a first mode, wherein the position of the flow control valve is based on readings from at least one of the pressure sensor, the second pressure sensor, and the third pressure sensor, and calibration data of the flow controller; the first mode provides a faster response time than the second mode; and a second mode, wherein control of the flow control valve is based on feedback received from the flow controller; and the second mode provides at least one of a higher level of accuracy and precision than the first mode.

[0132] Example 32: The apparatus of any one of Examples 21-31, further comprising a self-calibrating flow meter including a flow control valve and a differential pressure sensor coupled across the flow control valve, wherein the differential pressure sensor has a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve.

[0133] Example 33: The self-calibrating flow meter of Example 32, further comprising a temperature sensor coupled upstream of the LCV proximate to the flow control valve.

[0134] Example 34: The self-calibrating flow meter of Example 33, wherein the self-calibrating flow meter is configured to operate in at least one of two modes selected from modes including: a first mode, wherein the position of the flow control valve is based on readings from at least one of the pressure sensor, the differential pressure sensor, and the temperature sensor, and calibration data of the flow controller, the first mode being configured to provide a faster response time than the second mode; and a second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode being configured to provide at least one of a higher level of accuracy and precision than the first mode.

[0135] Example 35: In various embodiments, the disclosed subject matter includes a diversion-less gas dosing system. The diversion-less gas dosing system includes: a first process gas inlet pneumatically coupled to a first inlet valve and receiving a first process gas; a second process gas inlet pneumatically coupled to a second inlet valve and receiving a second process gas; a first flow controller and a second flow controller separately pneumatically coupled to be downstream of the first inlet valve and the second inlet valve, respectively; and at least one line fill volume (LCV) pneumatically coupled to be downstream of the first flow controller and the second flow controller. The at least one LCV receives at least one initial single dose of a mixture of the first process gas and the second process gas and separates the initial single dose of the first process gas and the second process gas. At least one pressure sensor separately coupled to each of the at least one LCV determines a pressure level within each of the at least one LCV. An outlet valve is pneumatically coupled downstream of the at least one LCV. The outlet valve is pneumatically coupled to a process chamber downstream of the outlet valve. The diversion-less gas dosing system is time independent with respect to the size of an initial dose of process gas.

[0136] Example 36: The system of example 35, wherein the first process gas inlet and the second process gas inlet are coupled to process gas supplies containing different precursor gases.

[0137] Example 37: The system of either Example 35 or Example 36, further comprising at least one additional outlet valve separately pneumatically coupled to each of the at least one LCV.

[0138] Example 38: The system of any one of Examples 35 to 37, further comprising a plurality of outlet valves, one of the plurality of outlet valves separately coupled to each of the at least one LCV.

[0139] Example 39: The system of any one of Examples 35-38, wherein the outlet valve comprises a single outlet valve pneumatically coupled to and downstream of each of the at least one LCV.

[0140] Example 40: The system of any one of Examples 35-39, further comprising a first self-calibrating flow meter and a second self-calibrating flow meter located downstream of the first flow controller and the second flow controller, respectively. Each of the first self-calibrating flow meter and the second self-calibrating flow meter includes a flow control valve and a second pressure sensor located upstream of the flow control valve.

[0141] Example 41: The first self-calibrating flow meter and the second self-calibrating flow meter of Example 40, each further including a third pressure sensor located downstream of the respective flow control valve and upstream of the at least one LCV.

[0142] Example 42: The first self-calibrating flow meter and the second self-calibrating flow meter of Example 41, wherein each of the first self-calibrating flow meter and the second self-calibrating flow meter operates in at least one of two modes selected from modes including: a first mode, in which the position of the flow control valve is based on readings from at least one of the pressure sensor, the second pressure sensor, and the third pressure sensor, and calibration data of the flow controller; the first mode provides a faster response time than the second mode; and a second mode, in which control of the flow control valve is based on feedback received from the flow controller; and the second mode provides at least one of a higher level of accuracy and a higher level of precision than the first mode.

[0143] Example 43: The system of any one of Examples 35-42, further comprising a first self-calibrating flow meter and a second self-calibrating flow meter located downstream of the first flow controller and the second flow controller, respectively. Each of the first self-calibrating flow meter and the second self-calibrating flow meter includes a flow control valve and a differential pressure sensor coupled across the respective flow control valve. The differential pressure sensor has a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve.

[0144] Example 44: The first self-calibrating flow meter and the second self-calibrating flow meter of Example 43, each further including a temperature sensor coupled upstream of the at least one LCV in proximity to a respective flow control valve.

[0145] Example 45: The first and second self-calibrating flow meters of Example 44, wherein each of the first and second self-calibrating flow meters operates in at least one of two modes selected from modes including: a first mode, wherein the position of the flow control valve is based on readings from at least one of a pressure sensor, a differential pressure sensor, and a temperature sensor, and calibration data of the flow controller; the first mode provides a faster response time than the second mode; and a second mode, wherein control of the flow control valve is based on feedback received from the flow controller; and the second mode provides at least one of greater accuracy and a higher level of precision than the first mode. The present invention can be realized, for example, in the following manner. Application example 1: 1. A shunt-less gas administration system, comprising: a process gas inlet pneumatically coupled to the inlet valve; a flow controller pneumatically coupled to the inlet valve; a line fill volume (LCV) pneumatically coupled downstream of the inlet valve and the flow controller, the LCV configured to receive an initial single dose of process gas; a pressure sensor coupled to the LCV for determining a pressure level within the LCV; an outlet valve pneumatically coupled downstream of the LCV, the outlet valve configured to be pneumatically coupled to a process chamber downstream of the outlet valve; the flow controller configured to control a flow of the process gas to the process chamber independently of the inlet valve and to substantially maintain the flow at a predetermined set point when the outlet valve is open; and the diversion-less gas dosing system is configured to control a flow of the process gas to the process chamber independently of the inlet valve and to substantially maintain the flow at a predetermined set point when the outlet valve is open, the diversion-less gas dosing system being time-independent with respect to the magnitude of the initial dose of the process gas. A system comprising: Application example 2: The system of Application Example 1, A system in which no diversion valves are used and no diversion of precursor gases to the foreline occurs within the gas dosing system. Application example 3: The system of Application Example 1, determining the initial dose of process gas based solely on the determined pressure level within the LCV; determining the initial dose of the process gas is not based on the time required to fill the LCV to the level of the initial dose of the process gas; system. Application example 4: The system of Application Example 1, The system wherein the ramp-up and ramp-down rates of the flow controller are compensated by the determined pressure level within the LCV. Application example 5: The system of Application Example 1, The flow controller a flow control mode, wherein the flow controller is configured to control the flow rate of the process gas; a pressure control mode, wherein the flow controller is configured to control the LCV to a determined pressure within the LCV based on a feedback loop from the pressure sensor; a hold mode, wherein the flow controller is configured to hold the control valve within the flow controller based on control valve position feedback; The system is configured to operate in at least one of three modes selected from the modes including: Application example 6: The system of Application Example 1, The system, wherein the outlet valve is configured to remain closed until the pressure sensor indicates that the pressure level within the LCV is at a predetermined level. Application example 7: The system of Application Example 1, a flow control valve; a second pressure sensor located upstream of the flow control valve, the flow control valve and the second pressure sensor both being located downstream of the flow controller; Self-calibrating flowmeters including The system further comprises: Application example 8: The self-calibrating flowmeter of Application Example 7, a third pressure sensor located downstream of the flow control valve and upstream of the LCV, wherein the self-calibrating flow meter further comprises: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the second pressure sensor and the third pressure sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode being configured to provide at least one of greater accuracy and greater precision than the first mode; and a self-calibrating flow meter configured to operate in at least one of two modes selected from modes including: Application example 9: The system of Application Example 1, 1. A self-calibrating flow meter, comprising: a flow control valve; a differential pressure sensor coupled across the flow control valve, the differential pressure sensor having a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve; a temperature sensor coupled upstream of the LCV proximate the flow control valve; a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the differential pressure sensor and the temperature sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode being configured to provide at least one of greater accuracy and greater precision than the first mode; a temperature sensor configured to operate in at least one of two modes selected from modes including Self-calibrating flowmeters including The system further comprises: Application example 10: 1. An apparatus for supplying a precursor gas, comprising: a precursor gas inlet pneumatically coupled to the inlet valve; a flow controller pneumatically coupled to be downstream of the inlet valve; a line charge volume (LCV) pneumatically coupled downstream of the flow controller, the LCV being filled with an initial single dose of the precursor gas; a pressure sensor coupled to the LCV for determining a pressure level within the LCV, the initial single dose of precursor gas being determined based on the pressure level within the LCV; an outlet valve pneumatically coupled downstream of the LCV, the outlet valve configured to be pneumatically coupled to a process chamber downstream of the outlet valve, the outlet valve configured to open to release the initial single dose of the precursor gas into the process chamber after the pressure level of the LCV reaches a predetermined value; the flow controller configured to control a flow of the precursor gas into the process chamber independently of the inlet valve and to substantially maintain the flow at a predetermined set point when the outlet valve is open; and the apparatus is configured to control a time-independent magnitude of the initial single dose of the process gas. An apparatus comprising: Application example 11: The device of Application Example 10, An apparatus in which no diversion valves are used and no diversion of precursor gases to the foreline is performed within the gas dosing apparatus. Application example 12: The device of Application Example 10, The flow controller a flow control mode, wherein the flow controller is configured to control the flow rate of the precursor gas; a pressure control mode, wherein the flow controller is configured to control the LCV to a determined pressure within the LCV based on a feedback loop from the pressure sensor; and a hold mode, wherein the flow controller is configured to hold the control valve within the flow controller based on control valve position feedback; The apparatus is configured to operate in at least one of three modes selected from the modes including: Application example 13: The device of Application Example 10, a flow control valve, and a second pressure sensor located upstream of the flow control valve, wherein the flow control valve and the second pressure sensor are both located downstream of the flow controller; a self-calibrating flow meter including: a third pressure sensor located downstream of the flow control valve and upstream of the LCV, the self-calibrating flow meter comprising: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the second pressure sensor and the third pressure sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode being configured to provide at least one of greater accuracy and greater precision than the first mode; a third pressure sensor configured to operate in at least one of two modes selected from modes including The apparatus further comprises: Application 14: The device of Application Example 10, 1. A self-calibrating flow meter, comprising: a flow control valve, and a differential pressure sensor coupled across the flow control valve, the differential pressure sensor having a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve. a self-calibrating flow meter including: a temperature sensor coupled upstream of the LCV proximate the flow control valve; a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the differential pressure sensor and the temperature sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode being configured to provide at least one of greater accuracy and greater precision than the first mode; a temperature sensor configured to operate in at least one of two modes selected from modes including: The apparatus further comprises: Example 15: 1. A shunt-less gas administration system, comprising: a first process gas inlet pneumatically coupled to the first inlet valve for receiving a first process gas; a second process gas inlet pneumatically coupled to the second inlet valve for receiving a second process gas; a first flow controller and a second flow controller separately pneumatically coupled to be downstream of the first inlet valve and the second inlet valve, respectively; at least one line fill volume (LCV) pneumatically coupled downstream of the first flow controller and the second flow controller, the at least one LCV configured to receive at least one initial single dose of a mixture of the first process gas and the second process gas and to separate the initial single dose of the first process gas and the initial single dose of the second process gas; at least one pressure sensor separately coupled to each of the at least one LCV to determine a pressure level within each of the at least one LCV; an outlet valve pneumatically coupled downstream of the at least one LCV, the outlet valve configured to be pneumatically coupled to a process chamber downstream of the outlet valve, the diversion-less gas dosing system having a time-independent magnitude of the initial dose of the process gas; A system comprising: Application 16: The system of Application Example 15, The system, wherein the first process gas inlet and the second process gas inlet are configured to be coupled to process gas supplies containing different precursor gases. Application 17: The system of Application Example 15, a first self-calibrating flow meter and a second self-calibrating flow meter located downstream of the first flow controller and the second flow controller, respectively, wherein each of the first self-calibrating flow meter and the second self-calibrating flow meter comprises: a flow control valve; a second pressure sensor located upstream of the flow control valve; The system further comprises a first self-calibrating flow meter and a second self-calibrating flow meter, Application 18: The first self-calibrating flow meter and the second self-calibrating flow meter of Application Example 17, The first and second self-calibrating flow meters each further include a third pressure sensor located downstream of the respective flow control valve and upstream of the at least one LCV. Example 19: The first self-calibrating flow meter and the second self-calibrating flow meter of Application Example 18, Each of the first self-calibrating flow meter and the second self-calibrating flow meter comprises: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the second pressure sensor and the third pressure sensor, and calibration data for the flow controller, the first mode providing a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode being configured to provide at least one of greater accuracy and greater precision than the first mode; a first self-calibrating flow meter and a second self-calibrating flow meter configured to operate in at least one of two modes selected from modes including: Example 20: The system of Application Example 15, a first self-calibrating flow meter and a second self-calibrating flow meter located downstream of the first flow controller and the second flow controller, respectively, wherein each of the first self-calibrating flow meter and the second self-calibrating flow meter comprises: a flow control valve; a differential pressure sensor coupled across each of the flow control valves, the differential pressure sensor having a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve; a temperature sensor coupled upstream of the at least one LCV proximate the respective flow control valve, wherein each of the first self-calibrating flow meter and the second self-calibrating flow meter comprises: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the differential pressure sensor and the temperature sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode being configured to provide at least one of greater accuracy and greater precision than the first mode; a temperature sensor configured to operate in at least one of two modes selected from modes including a first self-calibrating flow meter and a second self-calibrating flow meter, The system further comprises:

Claims

1. 1. A shunt-less gas administration system, comprising: a process gas inlet pneumatically coupled to the inlet valve; a flow controller pneumatically coupled to the inlet valve; a self-calibrating flow meter located downstream of the flow controller, the self-calibrating flow meter comprising a flow control valve; a line fill volume (LCV) pneumatically coupled downstream of the inlet valve and the flow controller, the LCV configured to receive an initial amount of process gas; a pressure sensor coupled to the LCV for determining a pressure level within the LCV; an outlet valve pneumatically coupled downstream of the LCV, the outlet valve configured to be pneumatically coupled to a process chamber downstream of the outlet valve, the outlet valve not including a diverted gas path between the outlet valve and the process chamber; the flow controller is configured to control the flow of the process gas into the process chamber independently of the inlet valve and to substantially maintain the flow at a predetermined set point when the outlet valve is open; The diversion-less gas dosing system is a system that is time independent with respect to the magnitude of the initial quantity of the process gas.

2. 10. The system of claim 1, A system in which no diversion valves are used and no diversion of precursor gases to the foreline occurs within the gas dosing system.

3. 10. The system of claim 1, determining the initial amount of process gas based solely on the determined pressure level within the LCV; determining the initial amount of process gas is not based on the time required to fill the LCV to the initial amount of process gas level; system.

4. 10. The system of claim 1, The system wherein the ramp-up and ramp-down rates of the flow controller are compensated by the determined pressure level in the LCV.

5. 10. The system of claim 1, The flow controller a flow control mode, wherein the flow controller is configured to control the flow rate of the process gas; a pressure control mode, wherein the flow controller is configured to control the LCV to a determined pressure within the LCV based on a feedback loop from the pressure sensor; a hold mode, wherein the flow controller is configured to hold the control valve within the flow controller based on control valve position feedback; The system is configured to operate in at least one of three modes selected from the modes including:

6. 10. The system of claim 1, The system, wherein the outlet valve is configured to remain closed until the pressure sensor indicates that the pressure level within the LCV is at a predetermined level.

7. 10. The system of claim 1, The self-calibrating flow meter includes a second pressure sensor located upstream of the flow control valve.

8. 8. The self-calibrating flow meter of claim 7, a third pressure sensor located downstream of the flow control valve and upstream of the LCV, a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the second pressure sensor and the third pressure sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode configured to provide at least one of greater accuracy and greater precision than the first mode; and and a self-calibrating flow meter configured to operate in at least one of two modes selected from modes including:

9. 10. The system of claim 1, The self-calibrating flow meter comprises: a differential pressure sensor coupled across the flow control valve, the differential pressure sensor having a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve; a temperature sensor coupled upstream of the LCV proximate the flow control valve; The self-calibrating flow meter comprises: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the differential pressure sensor and the temperature sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode configured to provide at least one of greater accuracy and greater precision than the first mode; and The system is configured to operate in at least one of two modes selected from modes including:

10. 1. An apparatus for supplying a precursor gas, comprising: a precursor gas inlet pneumatically coupled to the inlet valve; a flow controller pneumatically coupled to be downstream of the inlet valve; a self-calibrating flow meter located downstream of the flow controller, the self-calibrating flow meter comprising a flow control valve; a line fill volume (LCV) pneumatically coupled downstream of the flow controller, the LCV being filled with an initial amount of the precursor gas; a pressure sensor coupled to the LCV for determining a pressure level within the LCV, the initial amount of precursor gas being determined based on the pressure level within the LCV; an outlet valve pneumatically coupled downstream of the LCV, the outlet valve configured to be pneumatically coupled to a process chamber downstream of the outlet valve, the outlet valve having no diversion gas path between the outlet valve and the process chamber, the outlet valve configured to open to release the initial amount of the precursor gas into the process chamber after the pressure level of the LCV reaches a predetermined value; the flow controller is configured to control the flow of the precursor gas into the process chamber independently of the inlet valve and to substantially maintain the flow at a predetermined set point when the outlet valve is open; The apparatus is time independent with respect to the magnitude of the initial quantity of the precursor gas.

11. 11. The apparatus of claim 10, An apparatus in which no diversion valves are used and no diversion of precursor gases to the foreline is performed.

12. 11. The apparatus of claim 10, The flow controller a flow control mode, wherein the flow controller is configured to control the flow rate of the precursor gas; a pressure control mode, wherein the flow controller is configured to control the LCV to a determined pressure within the LCV based on a feedback loop from the pressure sensor; and a hold mode, wherein the flow controller is configured to hold the control valve within the flow controller based on control valve position feedback; The apparatus is configured to operate in at least one of three modes selected from the modes including:

13. 11. The apparatus of claim 10, The self-calibrating flow meter comprises: a second pressure sensor located upstream of the flow control valve, the flow control valve and the second pressure sensor both being located downstream of the flow controller; a third pressure sensor located downstream of the flow control valve and upstream of the LCV; The self-calibrating flow meter comprises: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the second pressure sensor and the third pressure sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode configured to provide at least one of greater accuracy and greater precision than the first mode; and and configured to operate in at least one of two modes selected from modes including:

14. 11. The apparatus of claim 10, The self-calibrating flow meter comprises: a differential pressure sensor coupled across the flow control valve, the differential pressure sensor having a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve; a temperature sensor coupled upstream of the LCV proximate the flow control valve; The self-calibrating flow meter comprises: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the differential pressure sensor and the temperature sensor, and calibration data for the flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from the flow controller, the second mode configured to provide at least one of greater accuracy and greater precision than the first mode; and and configured to operate in at least one of two modes selected from modes including:

15. 1. A shunt-less gas administration system, comprising: a first process gas inlet pneumatically coupled to the first inlet valve for receiving a first process gas; a second process gas inlet pneumatically coupled to the second inlet valve for receiving a second process gas; a first flow controller and a second flow controller separately pneumatically coupled to be downstream of the first inlet valve and the second inlet valve, respectively; a first self-calibrating flow meter and a second self-calibrating flow meter located downstream of the first flow controller and the second flow controller, respectively, the first self-calibrating flow meter and the second self-calibrating flow meter each including a flow control valve; at least one line fill volume (LCV) pneumatically coupled downstream of the first flow controller and the second flow controller, the at least one LCV configured to receive at least one of an initial amount of a mixture of the first process gas and the second process gas and to separate the initial amount of the first process gas from the initial amount of the second process gas; at least one pressure sensor separately coupled to each of the at least one LCV to determine a pressure level within each of the at least one LCV; an outlet valve pneumatically coupled downstream of the at least one LCV, the outlet valve configured to be pneumatically coupled to a process chamber downstream of the outlet valve, the outlet valve not including a diverted gas path between the outlet valve and the process chamber; The diversion-less gas dosing system is time independent with respect to the magnitude of the initial quantity of at least one of the first process gas and the second process gas.

16. 16. The system of claim 15, The system, wherein the first process gas inlet and the second process gas inlet are configured to be coupled to process gas supplies containing different precursor gases.

17. 16. The system of claim 15, The system wherein the first self-calibrating flow meter and the second self-calibrating flow meter each include a second pressure sensor located upstream of the flow control valve.

18. 18. The system of claim 17, The system, wherein each of the first self-calibrating flow meter and the second self-calibrating flow meter further comprises a third pressure sensor located downstream of the respective flow control valve and upstream of the at least one LCV.

19. 20. The system of claim 18, Each of the first self-calibrating flow meter and the second self-calibrating flow meter comprises: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the second pressure sensor and the third pressure sensor, and calibration data for at least one of the first flow controller and the second flow controller, the first mode providing a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from at least one of the first flow controller and the second flow controller, the second mode being configured to provide at least one of greater accuracy and greater precision than the first mode; The system is configured to operate in at least one of two modes selected from modes including:

20. 16. The system of claim 15, Each of the first self-calibrating flow meter and the second self-calibrating flow meter comprises: a differential pressure sensor coupled across each of the flow control valves, the differential pressure sensor having a first leg coupled upstream of the flow control valve and a second leg coupled downstream of the flow control valve; a temperature sensor coupled upstream of the at least one LCV proximate to the respective flow control valve; Each of the first self-calibrating flow meter and the second self-calibrating flow meter comprises: a first mode, wherein the position of the flow control valve is based on readings from the pressure sensor, at least one of the differential pressure sensor and the temperature sensor, and calibration data for at least one of the first flow controller and the second flow controller, the first mode being configured to provide a faster response time than a second mode; the second mode, wherein control of the flow control valve is based on feedback received from at least one of the first flow controller and the second flow controller, the second mode being configured to provide at least one of greater accuracy and greater precision than the first mode; The system is configured to operate in at least one of two modes selected from modes including:

Images