Adjusted water manufacturing device and adjusted water manufacturing method

Abstract

Provided is an apparatus for producing conditioned water, which has an adjusted concentration of dopant elements and a reduced content of impurity components, and which is used to apply to semiconductor substrates in the manufacturing process of semiconductors or semiconductor devices. [Solution] This is an apparatus for producing adjusted water, which comprises a dopant element concentration adjustment device that adds a concentration adjuster containing a dopant component to the water to be treated by controlling the amount of the concentration adjuster added, and a water quality monitoring device that measures the concentration of the dopant element in the water to be treated to which the concentration adjuster has been added, or in the adjusted water, and the apparatus also comprises an impurity component removal device that selectively removes at least a portion of impurity components other than the dopant component from the water to be treated to which the concentration adjuster may have been added or the concentration adjuster.

Description

[Technical Field]

[0001] The present disclosure relates to an apparatus for producing conditioned water and a method for producing conditioned water. [Background technology]

[0002] Substrates used in semiconductor devices such as transistors, diodes, and solar cells are manufactured by diffusing a dopant element such as phosphorus or boron into a semiconductor substrate. A dry processing method such as ion implantation is used as a method for diffusing a dopant element into a semiconductor substrate (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2023-118399 Summary of the Invention [Problem to be solved by the invention]

[0004] It tends to be difficult to apply dry processing methods to semiconductor substrates having complex structures. Therefore, the present inventors have investigated a method of applying an aqueous solution containing a dopant element to the surface of a semiconductor substrate as a wet processing method that is thought to be more applicable to semiconductor substrates having complex structures. The present inventors have found that in this case, a large amount of unintended impurity components may be mixed into the aqueous solution during the manufacturing process of the aqueous solution.

[0005] The present disclosure aims to provide an apparatus for producing conditioned water having an adjusted concentration of dopant elements and a reduced content of impurity components, which is used to apply to semiconductor substrates in the manufacturing process of semiconductors or semiconductor devices. [Means for solving the problem]

[0006] One aspect of the conditioned water manufacturing apparatus of the present disclosure is an apparatus for manufacturing conditioned water in which the concentration of a dopant element is adjusted, and which is used for coating a semiconductor substrate in a semiconductor or semiconductor device manufacturing process, The manufacturing apparatus includes a dopant element concentration adjusting device that controls the amount of a concentration adjuster containing a dopant component added to the water to be treated, and a water quality monitoring device that measures the concentration of the dopant element in the water to be treated to which the concentration adjuster has been added or in the adjusted water; The manufacturing apparatus is equipped with an impurity component removal device that selectively removes at least a portion of impurity components other than the dopant components from the water to be treated or the concentration adjuster, to which the concentration adjuster may be added. [Effects of the Invention]

[0007] The manufacturing apparatus of the present disclosure can produce adjusted water with an adjusted concentration of dopant elements and a reduced content of impurity components, which is used to apply to semiconductor substrates in the manufacturing process of semiconductors or semiconductor devices. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a block diagram that schematically illustrates one embodiment of an apparatus for producing conditioned water. [Figure 2] FIG. 2 is a block diagram that schematically illustrates one embodiment of an apparatus for producing conditioned water. [Figure 3] FIG. 3 is a block diagram that schematically illustrates one embodiment of an apparatus for producing conditioned water. [Figure 4] FIG. 4 is a block diagram that schematically illustrates one embodiment of an apparatus for producing conditioned water. DETAILED DESCRIPTION OF THE INVENTION

[0009] In this specification, the numerical range N1 to N2 means N1 or more and N2 or less. In this specification, when the units of the numerical values ​​written before and after "~" indicating a numerical range are the same, the unit of the numerical value written before "~" may be omitted.

[0010] The manufacturing apparatus of the present disclosure produces the target adjusted water by treating raw water such as ultrapure water with a concentration adjuster, etc., as described below. In this specification, raw water such as ultrapure water and an aqueous solution obtained by adding a concentration adjuster, etc., to raw water are also collectively referred to as "water to be treated."

[0011] [Adjusted water manufacturing equipment] The manufacturing apparatus of the present disclosure is an apparatus for manufacturing conditioned water in which the concentration of a dopant element is adjusted, and which is used to apply to a semiconductor substrate in a manufacturing process of a semiconductor or semiconductor device.

[0012] The manufacturing apparatus of the present disclosure includes: a dopant element concentration adjusting device that adds a concentration adjusting agent containing a dopant component to the water to be treated by controlling the amount of the agent added; a water quality monitoring device that measures the concentration of the dopant element in the treatment target water or adjusted water to which the concentration adjuster has been added; Equipped with.

[0013] The manufacturing apparatus of the present disclosure is equipped with an impurity component removal device that selectively removes at least a portion of undesired impurity components, which are different from the desired dopant components, from the water to be treated or the concentration adjuster, to which the above-mentioned concentration adjuster may be added.

[0014] The manufacturing apparatus of the present disclosure can produce adjusted water from water such as ultrapure water, which contains the desired dopant element or dopant component (e.g., a metal element or ion) in a wide concentration range, while removing or reducing the concentration of undesired impurity components (e.g., a metal element or ion).

[0015] The dopant component is, for example, a component containing a dopant element to be doped into a semiconductor substrate in a semiconductor or semiconductor device manufacturing process. By using such adjusted water, a semiconductor substrate can be doped by a wet processing method. For example, by applying an appropriate amount of adjusted water obtained by the manufacturing apparatus of the present disclosure to appropriate locations on the semiconductor substrate surface in a doping process in a semiconductor or semiconductor device manufacturing process, the dopant element constituting the dopant component can be doped in an appropriate amount at appropriate locations.

[0016] Ultrapure water is produced, for example, by removing ionic substances, organic matter, dissolved gases, and particulates from raw water. Examples of raw water include city water, well water, river water, lake water, and industrial water. Ultrapure water preferably has a resistivity of 18.1 MΩ·cm or more, particulates with a particle size of 50 nm or more and 1000 particles / L or less, viable bacteria of 1 particle / L or less, TOC (Total Organic Carbon) of 1 μg / L or less, total silicon of 0.1 μg / L or less, metals of 1 ng / L or less, ions of 10 ng / L or less, hydrogen peroxide of 30 μg / L or less, and a water temperature of 25±2°C, but is not particularly limited thereto.

[0017] The conditioned water produced using the manufacturing apparatus of the present disclosure is transported to a point of use (UP). Examples of the UP include a doping treatment apparatus for applying the conditioned water to a semiconductor substrate in a semiconductor or semiconductor device manufacturing process. Examples of semiconductor devices include transistors, diodes, and solar cells.

[0018] <Dopant element concentration adjustment device> The manufacturing apparatus of the present disclosure includes a dopant element concentration adjustment device. The concentration adjustment device is a device for adding a concentration adjuster containing a dopant component to water to be treated, such as ultrapure water, while controlling the amount of the agent added; for example, a device for adding an aqueous solution containing a dopant component to the water to be treated.

[0019] The concentration adjuster contains a dopant component. The dopant component contains a dopant element (hereinafter also simply referred to as "dopant") as a constituent element, and is a component for containing the target dopant element in the concentration adjuster and the adjusted water to be produced. One type of dopant component may be used, or two or more types may be used. The concentration adjuster is, for example, an aqueous solution containing the dopant component.

[0020] The dopant component is not particularly limited as long as it is a component conventionally used for doping semiconductor substrates, and may be, for example, a compound containing an n-type dopant or a compound containing a p-type dopant. The aqueous solution is, for example, an aqueous solution containing at least one compound selected from the group consisting of compounds containing an n-type dopant and compounds containing a p-type dopant.

[0021] Examples of n-type dopants include phosphorus, arsenic, sulfur, tin, bismuth, selenium, tellurium, and antimony. Examples of p-type dopants include boron, zinc, magnesium, gallium, indium, and aluminum. Examples of the dopant component include phosphorus compounds, arsenic compounds, and boron compounds.

[0022] Examples of phosphorus compounds include phosphoric acid, phosphorous acid, diphosphorous acid, polyphosphoric acid, and diphosphorus pentoxide, as well as phosphite esters such as trimethyl phosphite and triethyl phosphite, phosphate esters such as trimethyl phosphate and triethyl phosphate, tris(trialkylsilyl) phosphites such as tris(trimethylsilyl) phosphite, and tris(trialkylsilyl) phosphates such as tris(trimethylsilyl) phosphate.

[0023] Examples of arsenic compounds include arsenic trioxide-sodium sulfate, arsenic acid, arsenous acid, and trialkyl arsenates such as triethoxyarsenic and tri-n-butoxyarsenic.

[0024] Boron compounds include boric acid, metaboric acid, boronic acid, perboric acid, hypoboric acid, diboron trioxide, trialkyl borates, tetrahydroxydiborane, monoalkoxytrihydroxydiborane, dialkoxydihydroxydiborane, trialkoxymonohydroxydiborane, and tetraalkoxydiborane.

[0025] The concentration of the dopant element in the adjusted water obtained by the manufacturing apparatus of the present disclosure is set appropriately depending on the application of the adjusted water and is not particularly limited. The concentration of the dopant element in the adjusted water is preferably 100,000 mg / L or less, more preferably 0.1 to 50,000 mg / L, even more preferably 0.5 to 20,000 mg / L, and particularly preferably 1 to 13,000 mg / L. The concentration adjusting apparatus, for example, adds a concentration adjuster to the water to be treated so that the concentration of the dopant element in the adjusted water falls within the above range.

[0026] The concentration adjusting device is, for example, a device that measures and supplies a concentration adjusting agent to a transfer line for water to be treated, such as ultrapure water. The concentration adjusting device includes, for example, a tank that stores the concentration adjusting agent and a supply line that supplies the concentration adjusting agent from the tank to the transfer line, and may further include a pump that adjusts the supply rate of the concentration adjusting agent, as desired. As will be described later, in one embodiment, the concentration adjusting device may further include a device for removing impurities. The concentration adjusting device may include, for example, a tank containing a concentration adjusting agent, the remover, and a supply line that supplies the concentration adjusting agent from the tank to the transfer line through the remover. The concentration adjusting device may include two or more tanks according to the type of concentration adjusting agent.

[0027] The tank containing the concentration adjuster may be equipped with at least one selected from the group consisting of a device for purging the inside of the tank with an inert gas (e.g., N2 gas) and a degassing membrane for removing dissolved gas (e.g., dissolved oxygen) in the concentration adjuster in the tank.

[0028] The pump may be, for example, a diaphragm pump. Alternatively, a pressure extrusion pump may be used, in which the concentration adjuster is placed in a tank together with an inert gas (e.g., N2 gas) and the pressure of the inert gas is used to extrude the concentration adjuster.

[0029] <Impurity component removal device> The manufacturing apparatus of the present disclosure includes an impurity component removal device. The removal device selectively removes at least a portion of impurity components (e.g., at least one selected from the group consisting of metal elements and ions) other than the dopant component from the treatment target water to which the concentration adjuster may be added or from the concentration adjuster. The impurity components here are components that are undesirable to be contained in the adjusted water to be produced. In one embodiment, the removal device allows the dopant components to pass through and selectively removes the impurity components, such as metal elements and ions, such as Al, Ca, Fe, Mg, Na, Ni, and Zn, as well as undesired dopant components.

[0030] The removal device preferably has a removal section appropriate for the type of impurity component to be removed. The removal device preferably has at least one selected from the group consisting of ion exchange resins, ion exchange membranes, nanofiltration membranes (NF membranes), microfiltration membranes (MF membranes), ultrafiltration membranes (UF membranes), and reverse osmosis membranes (RO membranes). Among these, ion exchange resins are preferred. Examples of ion exchange resins include cation exchange resins and anion exchange resins, and cation exchange resins are preferred from the viewpoint of removing cationic metal ion impurities in the water to be treated or the concentration adjuster.

[0031] Examples of cation exchange resins include strongly acidic cation exchange resins such as sulfonic acid type and weakly acidic cation exchange resins such as carboxylic acid type. Examples of anion exchange resins include strongly basic anion exchange resins such as quaternary amine type and weakly basic anion exchange resins such as primary, secondary, or tertiary amine type.

[0032] As the ion exchange resin, for example, a mixed resin of a cation exchange resin and an anion exchange resin may be used. Thereby, for example, an impurity component can be selectively removed by an impurity component removing device according to the types of a target dopant component (for example, a boron compound) and a non-target dopant component (for example, a dopant component other than the boron compound).

[0033] The ion exchange resin may be, for example, a gel type resin.

[0034] The above removing device may include an ion exchange resin column. The ion exchange resin column may be in one stage or two or more stages.

[0035] The above removing device is, for example, a device that removes impurity components so that the concentration of impurity components in the water to be treated or the concentration adjusting agent is preferably 1 μg / L or less, more preferably 0.1 μg / L or less, still more preferably 0.01 μg / L or less, and particularly preferably 0.001 μg / L or less.

[0036] In one embodiment, the above removing device is located upstream or downstream of the dopant element concentration adjusting device on the transfer line of the water to be treated, and is preferably located downstream. Thereby, the concentration of impurity components (for example, metal elements, ions) in the water to be treated can be reduced.

[0037] In one embodiment, the above removing device is included in the dopant element concentration adjusting device. That is, in one embodiment, the above concentration adjusting device may further include the above removing device. Thereby, for example, impurity components in the concentration adjusting agent containing a dopant component added to the water to be treated can be removed or the concentration thereof can be reduced, and as a result, impurity components in the water to be treated can be removed or the concentration thereof can be reduced.

[0038] <pH Adjusting Device and Redox Potential Adjusting Device> The manufacturing apparatus of the present disclosure may further include a pH adjuster that adjusts the pH of water to be treated, such as ultrapure water. The pH adjuster adjusts the pH of the water to be treated by measuring and supplying a pH adjuster to a transfer line for the water to be treated. The pH adjuster may include, for example, a tank containing the pH adjuster and a supply line for supplying the pH adjuster from the tank to the transfer line, and may optionally further include a pump for adjusting the supply rate of the pH adjuster.

[0039] The manufacturing apparatus of the present disclosure may further include an oxidation-reduction potential adjusting device (hereinafter also referred to as "ORP adjusting device") that adjusts the oxidation-reduction potential (hereinafter also referred to as "ORP adjusting device") of water to be treated, such as ultrapure water. The ORP adjusting device is preferably located downstream of the pH adjusting device and upstream of the degassing device on the transfer line. Therefore, the ORP of the water to be treated may be adjusted by the ORP adjusting device.

[0040] The ORP adjuster is a device that adjusts the ORP of the water to be treated by measuring and supplying an oxidation-reduction potential adjuster (hereinafter also referred to as "ORP adjuster") to the transfer line. The ORP adjuster includes, for example, a tank that stores the ORP adjuster and a supply line that supplies the ORP adjuster from the tank to the transfer line, and may further include a pump that adjusts the supply rate of the ORP adjuster, if desired.

[0041] pH-adjusted water, obtained by adding a pH adjuster to ultrapure water, has a higher electrical conductivity than ultrapure water. This reduces the buildup of static electricity in the pipes and the liquid flowing through them, and prevents particles from being mixed into the water being treated.

[0042] The tank may include at least one selected from the group consisting of a device for purging the tank with an inert gas (e.g., N2 gas) and a degassing membrane for removing dissolved gas (e.g., dissolved oxygen) from the pH adjuster or ORP adjuster in the tank.

[0043] The pump may be, for example, a diaphragm pump. Alternatively, a pressure extrusion pump may be used, in which the pH adjuster or ORP adjuster is placed in a tank together with an inert gas (e.g., N2 gas) and the pressure of the inert gas is used to extrude the pH adjuster or ORP adjuster.

[0044] When the pH adjuster or ORP adjuster is a gas, a direct gas-liquid contact device such as a gas permeable membrane module or an ejector may be used as the pH adjuster or ORP adjuster.

[0045] Examples of pH adjusters that can be used to adjust the pH of the water to be treated or the adjusted water to 7 or higher include aqueous solutions of alkaline compounds and gaseous alkaline compounds. The alkaline compound is the active ingredient of the pH adjuster. Examples of alkaline compounds include ammonia, tetramethylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate, and sodium bicarbonate. Examples of gaseous alkaline compounds include ammonia gas. One type of alkaline compound may be used, or two or more types may be used.

[0046] Among these, an aqueous ammonia solution or ammonia gas is preferred, and an aqueous ammonia solution is more preferred. By dissolving a small amount of ammonia in ultrapure water, for example, the effect of suppressing dissolution and charging of semiconductor materials can be obtained.

[0047] In one embodiment, the pH adjuster adjusts the pH of the water to be treated to preferably 8 to 11. A pH of 8 or higher tends to suppress the generation of static electricity in various devices located downstream of the pH adjuster. A pH of 11 or lower tends to suppress corrosion of semiconductor substrates and deterioration of membranes and the like included in degassing devices or gas dissolved membrane devices.

[0048] As pH adjusters, when adjusting the pH of the water to be treated or the adjusted water to less than 7, for example, aqueous solutions of acidic compounds such as hydrochloric acid, nitric acid, sulfuric acid, formic acid, acetic acid, and citric acid, and gases such as CO2 gas can be mentioned. Acidic compounds and carbon dioxide gas (CO2 gas) are the active ingredients of the pH adjuster. One kind of acid compound may be used, or two or more kinds may be used. The pH is the value measured at 23 °C using a known pH meter.

[0049] The pH adjuster is preferably a liquid, more preferably an aqueous solution of an alkaline compound, and even more preferably an aqueous ammonia solution. <00OO198>

[0050] As ORP adjusters, when adjusting the oxidation-reduction potential of the water to be treated or the adjusted water to a higher level (+ side), for example, aqueous solutions such as hydrogen peroxide water, and gases such as ozone gas and oxygen gas can be mentioned. As ORP adjusters, when adjusting the oxidation-reduction potential of the water to be treated or the adjusted water to a lower level, for example, aqueous solutions of compounds such as oxalic acid, hydrogen sulfide, and potassium iodide, and gases such as hydrogen gas can be mentioned. One kind of the above compounds may be used, or two or more kinds may be used. One kind of the above gases may be used, or two or more kinds may be used. The ORP is the value measured at 23 °C using a known ORP meter.

[0051] <Particle removal device> The manufacturing apparatus of the present disclosure may further include a particle removal device. The particle removal device is a device for removing particles, and for example, includes at least one selected from the group consisting of NF membranes, RO membranes, UF membranes, and MF membranes. The particles are assumed to exist as solids in water. Examples of the particles include solids having a particle size of 1 nm or more. <OO00206>The installation location of the particle removal device is not particularly limited.

[0052] <TOC removal device> The manufacturing apparatus of the present disclosure may further include a TOC removal device. The TOC removal device targets organic matter. The TOC removal device includes at least one selected from the group consisting of an NF membrane, an RO membrane, an ultraviolet (UV) oxidation device, an ozone oxidation device, an advanced oxidation treatment (AOP) device, an ion exchange resin, and activated carbon. The location where the TOC removal device is installed is not particularly limited.

[0053] <Hydrogen peroxide removal device> The manufacturing apparatus of the present disclosure may further include a hydrogen peroxide removal device. For example, it is preferable that at least a portion of the hydrogen peroxide has been removed from the water to be treated to which the ORP adjuster is supplied. Therefore, the hydrogen peroxide remover is preferably located upstream of the ORP adjuster on the transfer line, and more preferably upstream of the pH adjuster and the ORP adjuster. By providing the hydrogen peroxide remover, the ORP adjuster can accurately control the ORP of the adjusted water.

[0054] The hydrogen peroxide removal device includes, for example, a platinum group metal-supported resin column. The platinum group metal-supported resin column includes a resin (hereinafter also referred to as a "carrier resin") and a platinum group metal supported on the resin. In the platinum group metal-supported resin column, the catalytic action of the platinum group metal decomposes and removes hydrogen peroxide from the water to be treated, such as ultrapure water.

[0055] Examples of carrier resins include ion exchange resins. Among ion exchange resins, anion exchange resins are preferred. Platinum group metals are negatively charged, so they are stably supported on anion exchange resins and are less likely to fall off. The exchange groups of the anion exchange resins are preferably in the OH form. The OH-type anion exchange resins have an alkaline resin surface, which promotes the decomposition of hydrogen peroxide.

[0056] Examples of platinum group metals include ruthenium, rhodium, palladium, osmium, iridium, and platinum. Platinum group metals may be used alone, two or more, or as an alloy of two or more, or purified products of naturally occurring mixtures may be used without separating them into individual elements. Among these, platinum, palladium, platinum / palladium alloys, or mixtures of two or more of these, are preferably used because of their strong catalytic activity. Nano-sized particles of these metals can also be preferably used.

[0057] <Pump> The manufacturing apparatus of the present disclosure may further include a pump. Use of the pump makes it easy to increase the flow rate and water pressure. The pump is preferably a pump that can control the amount of pressure applied. Examples of pumps include a rotary positive displacement pump that continuously sucks and discharges by changing the volume, a reciprocating positive displacement pump that repeatedly sucks and discharges by changing the volume, and a centrifugal pump that discharges liquid by centrifugal force or thrust generated by the rotation of an impeller or propeller inside the pump.

[0058] <Degassing device> The manufacturing apparatus of the present disclosure may further include a degassing device that degasses the water to be treated. The degassing device removes at least a portion of the dissolved gases in the water to be treated, reducing the amount of dissolved gases, such as dissolved oxygen and dissolved nitrogen.

[0059] The degassing device is preferably located downstream of the pH adjuster or downstream of the pH adjuster and ORP adjuster on the transfer line. Although this type of manufacturing apparatus is equipped with a degassing device, it can suppress static electricity and prevent fine particles from accumulating on the gas-permeable membrane surface. This prevents fine particles from being mixed into the adjusted water.

[0060] As the degassing device, a membrane degassing device is preferred, and a membrane degassing device equipped with a gas-permeable membrane is more preferred. In one embodiment, the membrane degassing device passes the water to be treated through one side (liquid phase chamber) of the gas-permeable membrane, and reduces the pressure on the other side (gas phase chamber) with a vacuum pump, thereby causing at least a portion of the dissolved gas to permeate through the gas-permeable membrane and migrate to the gas phase chamber for removal. The degassing device, for example, reduces the dissolved oxygen concentration in the water to be treated supplied to the gas-dissolved membrane device to 0.1 mg / L or less.

[0061] By post-degassing the water to be treated without directly degassing the concentration adjuster, pH adjuster, and ORP adjuster, the risk of chemical leakage during vacuum degassing of these chemicals can be reduced.

[0062] The gas-permeable membrane may be any membrane that allows gases such as oxygen, nitrogen, and steam to pass through but does not allow water to pass through. Examples of materials constituting the gas-permeable membrane include polymeric materials such as silicone rubber, polytetrafluoroethylene, polyvinylidene fluoride, polyolefins (e.g., polypropylene), and polyurethane. One or more polymeric materials may be used. Among these, at least one selected from the group consisting of polypropylene and polyvinylidene fluoride is preferred.

[0063] <Gas-dissolved film type device> The manufacturing apparatus of the present disclosure may further include a gas dissolved film type apparatus. The gas-dissolved membrane device is preferably located downstream of the degassing device on the transfer line. The gas-dissolved membrane device is a device that dissolves an inert gas in, for example, degassed water to be treated via a gas-permeable membrane. This stabilizes the properties of the water to be treated.

[0064] Inert gases include, for example, nitrogen gas, argon, and helium.

[0065] In one embodiment, the gas-dissolved membrane type device flows degassed water to be treated on one side (liquid phase chamber) of a gas-permeable membrane and supplies an inert gas to the other side (gas phase chamber), allowing the inert gas to permeate the gas-permeable membrane, migrate to the liquid phase side, and dissolve in the water to be treated.

[0066] Examples of materials constituting the gas-permeable membrane are as described above, and will not be repeated here. Among the above materials, at least one selected from the group consisting of polypropylene and polyvinylidene fluoride is preferred.

[0067] The gas-permeable membrane may be, for example, a hollow fiber membrane. In this case, the gas-dissolved membrane device includes a hollow fiber membrane unit containing a hollow fiber membrane therein. Connected to the interior of the hollow fiber membrane unit are a liquid supply pipe for supplying the degassed water to be treated to the hollow fiber membrane unit, a gas supply pipe for supplying an inert gas to the hollow fiber membrane unit, and a drain pipe for discharging the conditioned water with the inert gas dissolved therein.

[0068] <Water quality monitoring device> The manufacturing apparatus of the present disclosure preferably further includes a water quality monitoring device for measuring the quality (e.g., concentration of a dopant element) of the water to be treated or the conditioned water.

[0069] The water quality monitoring device is preferably located downstream of the dopant element concentration adjustment device on the transfer line for the water to be treated. The water quality monitoring device measures the concentration of the dopant element in the water to be treated or the adjusted water, and monitors whether the concentration of the dopant element is at a desired value.

[0070] The water quality monitoring device is preferably located downstream of the concentration adjusting device on the transfer line for the water to be treated, and upstream or downstream of the device for removing impurity components.

[0071] The water quality monitoring device is preferably located downstream of the gas dissolved film device on the transfer line. The water quality monitoring device may, for example, measure at least one selected from the group consisting of the concentration of the active ingredient of a pH adjuster, the concentration of the active ingredient of an ORP adjuster, pH, oxidation-reduction potential (ORP), and the concentration of an inert gas in the water to be treated or the conditioned water, and monitor whether the concentration of the active ingredient, pH, ORP, or the concentration of the inert gas is at a desired value. These measurements may be performed by the water quality monitoring device that measures the concentration of the dopant element, or by a water quality monitoring device different from the water quality monitoring device that measures the concentration of the dopant element.

[0072] The concentration of dopant elements in the water to be treated or the adjusted water can be measured using a known pH meter or conductivity meter, or a metal element or ion detection device. The pH, ORP, and inert gas concentration of the water to be treated or the adjusted water can be measured using a known pH meter, a known ORP meter, and a known gas concentration meter, respectively. The concentration of the above-mentioned active ingredients can be measured using a known conductivity meter.

[0073] <Control device> The manufacturing apparatus of the present disclosure preferably further includes a control device in addition to the water quality monitoring device. The control device is, for example, a computer. The water quality monitoring device may be connected to the control device, for example, electrically or wirelessly. The control device may be connected to at least one device selected from the group consisting of the concentration adjusting device, pH adjusting device, ORP adjusting device, and gas dissolved film type device, for example, electrically or wirelessly.

[0074] The control device is a device that controls the amount of addition or supply rate of a concentration adjuster containing a dopant component in a dopant element concentration adjustment device based on the water quality (e.g., dopant element concentration, pH, or conductivity) of the water to be treated or the adjusted water measured by a water quality monitoring device.

[0075] The control device can control the adjusted water to have a set concentration of the dopant element. The control of the concentration by such a control device can be performed by feedback control such as PI control or PID control, or by other well-known methods.

[0076] The control device can transmit a signal to a dopant element concentration adjustment device based on the water quality (e.g., dopant element concentration, pH, or conductivity) measured by a water quality monitoring device, and control the amount of addition or supply rate of the concentration adjustment agent in the device using a pump or the like.

[0077] The control device may be, for example, a device that controls at least one selected from the group consisting of the amount or supply rate of a pH adjuster in a pH adjuster device, the amount or supply rate of an ORP adjuster in an ORP adjuster device, and the amount or supply rate of an inert gas in a gas-dissolved membrane device, based on the water quality of the water to be treated or the adjusted water measured by a water quality monitoring device.

[0078] The control device can control the adjusted water to have at least one selected from the group consisting of a set concentration of the active ingredient, a set pH value, a set ORP value, and a set concentration of the inert gas. The control of at least one selected from the group consisting of the concentration of the active ingredient, pH, ORP, and the concentration of the inert gas by such a control device can be controlled by a known method, for example, feedback control such as PI control or PID control.

[0079] The control device can transmit a signal to the pH adjustment device based on the water quality (e.g., the concentration of the active ingredient of the pH adjuster or pH) measured by the water quality monitoring device, and control the amount of pH adjuster added or the supply rate in the pH adjustment device using a pump or the like. The control device can transmit a signal to the ORP adjustment device based on the water quality (e.g., the concentration of the active ingredient in the ORP adjuster or the ORP) measured by the water quality monitoring device, and control the amount of ORP adjuster added or the supply rate in the ORP adjustment device using a pump or the like. The control device can transmit a signal to an inert gas mass flow controller based on the water quality (e.g., the concentration of the inert gas) measured by a water quality monitoring device, and control the amount of inert gas added or the supply rate of the inert gas supplied from the inert gas supply device using the mass flow controller, etc.

[0080] <Temperature control device> The manufacturing apparatus of the present disclosure may further include a temperature control device. The location where the temperature control device is installed in the manufacturing apparatus of the present disclosure is not particularly limited. Examples of the temperature control device include a heat exchanger.

[0081] <Coating equipment> The manufacturing apparatus of the present disclosure may further include an application device for applying the produced conditioned water to an object at a point of use of the produced conditioned water, such as a semiconductor substrate used in a semiconductor or semiconductor device manufacturing process. Any known coating device can be used, including, for example, a dip coater, a slit coater, a spin coater, a spray coater, and an inkjet coating device.

[0082] <Flow path> In the manufacturing apparatus of the present disclosure, the flow paths (e.g., transfer lines or supply lines) through which the water to be treated, such as ultrapure water, adjusted water, concentration adjusters, pH adjusters, ORP adjusters, and inert gases, flow are made up of, for example, piping. The flow paths may be provided with equipment such as tanks, pumps, joints, and valves.

[0083] Examples of materials for piping include polymeric materials such as polyvinyl chloride (PVC), polyphenylene sulfide (PPS), polyvinylidene fluoride (PVDF), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), and polypropylene (PP), as well as fiber-reinforced plastics (FRP) and stainless steel. Among these, PFA is preferred.

[0084] <Example of Manufacturing Device> Hereinafter, an embodiment of the manufacturing apparatus of the present disclosure will be described in detail with reference to the drawings. 1 to 4 are block diagrams that schematically show a manufacturing apparatus according to the present disclosure.

[0085] 1 includes a transfer line L1 for water W to be treated, such as ultrapure water, a dopant element concentration adjustment device 10, an impurity component removal device 20, and a water quality monitoring device 30. The transfer line L1 connects the concentration adjustment device 10 and the removal device 20, and also connects the removal device 20 and the monitoring device 30. 1 includes a concentration adjuster 10, a removal device 20, and a monitoring device 30, arranged in this order from upstream to downstream of a transfer line L1 through which the water to be treated W flows. The adjusted water produced is sent to a use point (UP) via a transfer line L2.

[0086] 2 includes a transfer line L1 for water W to be treated, such as ultrapure water, a dopant element concentration adjustment device 10, a water quality monitoring device 30, and an impurity component removal device 20. The transfer line L1 connects the concentration adjustment device 10 and the water quality monitoring device 30, and also connects the water quality monitoring device 30 and the removal device 20. 2 includes, from upstream to downstream of a transfer line L1 through which the water to be treated W flows, a concentration adjuster 10, a water quality monitoring device 30, and a removal device 20. The adjusted water thus produced is sent to a use point (UP) via a transfer line L2.

[0087] The dopant element concentration adjusting device 10 in Figures 1 and 2 includes a tank 12 containing a concentration adjusting agent containing a dopant component, a supply line 14L connecting the tank 12 to a transfer line L1, and may further include a pump (not shown) located on the supply line 14L.

[0088] 3 includes a transfer line L1 for water W to be treated, such as ultrapure water, a concentration adjuster 10 for a dopant element, and a water quality monitor 30. The transfer line L1 connects the concentration adjuster 10 and the water quality monitor 30. 3 includes a concentration adjuster 10 and a water quality monitor 30, arranged in this order from upstream to downstream of a transfer line L1 through which the water to be treated W flows. The adjusted water produced is sent to a use point (UP) via a transfer line L2.

[0089] The dopant element concentration adjusting device 10 in Figure 3 includes a tank 12 containing a concentration adjusting agent containing a dopant component, an impurity component removing device 16, and a supply line 14L connecting the tank 12, the removing device 16, and the transfer line L1.

[0090] The manufacturing apparatus 1 in Figure 4 is equipped with a hydrogen peroxide removal device 90, a pH adjustment device 50, an ORP adjustment device 60, a degassing device 70, and a gas dissolved film device 80, arranged in this order on the transfer line L1. Ultrapure water, serving as raw water flowing through the transfer line L1, passes through the hydrogen peroxide removal device 90 to remove hydrogen peroxide, passes through the pH adjustment device 50 to become pH-adjusted water, passes through the ORP adjustment device 60 to adjust the ORP, passes through the degassing device 70 to be degassed, and the degassed pH-adjusted water passes through the gas dissolved film device 80 to become adjusted water. In the manufacturing apparatus 1 in Figure 4, the location of the water quality monitoring device 30 that measures the concentration of the dopant element is not particularly limited, as long as it is downstream of the concentration adjustment device 10.

[0091] The manufacturing apparatus 1 in Figure 4 may be equipped with a concentration adjustment device 10 at position A and a removal device 20 at position B, C, D, E or F; may be equipped with a concentration adjustment device 10 at position A or B and a removal device 20 at position C, D, E or F; may be equipped with a concentration adjustment device 10 at position A, B or C and a removal device 20 at position D, E or F; may be equipped with a concentration adjustment device 10 at position A, B, C or D and a removal device 20 at position E or F; or may be equipped with a concentration adjustment device 10 at position A, B, C, D or E and a removal device 20 at position F. The manufacturing apparatus 1 in FIG. 4 may be provided with a dopant element concentration adjusting device 10 equipped with an impurity component removing device 16 at position A, B, C, D, E or F.

[0092] The production apparatus 1 in FIG. 4 does not necessarily have to include at least one device selected from the group consisting of the hydrogen peroxide removal device 90, the pH adjustment device 50, the ORP adjustment device 60, the degassing device 70, and the gas dissolved film type device 80.

[0093] 1 to 4 controls the amount of addition or supply rate of the concentration adjuster in the concentration adjuster 10 based on the water quality (e.g., the concentration of the dopant element) obtained by the water quality monitoring device 30. The control device 40 in Fig. 4 controls the amount of addition or supply rate of the pH adjuster in the pH adjuster 50, the ORP adjuster in the ORP adjuster 60, and the inert gas in the gas dissolved film type device 80 based on the water quality obtained by the water quality monitoring device 30.

[0094] The above describes the adjusted water manufacturing apparatus of the present disclosure based on the above embodiment with reference to the attached drawings, but the adjusted water manufacturing apparatus of the present disclosure is not limited to the above embodiment and can be modified in various ways.

[0095] [Method of producing adjusted water] The method for producing conditioned water according to the present disclosure includes: a step of adding a concentration adjuster containing a dopant component to the water to be treated while controlling the amount of the agent added (hereinafter also referred to as the "addition step"); A step of measuring the concentration of the dopant element in the treatment target water or adjusted water to which the concentration adjuster has been added (hereinafter also referred to as the "water quality monitoring step"); It has. The production method further includes a step of selectively removing at least a portion of impurity components other than the dopant component from the treatment target water to which the concentration adjuster may be added (hereinafter also referred to as a "removal step"); or The adding step further includes a step (removing step) of selectively removing at least a part of impurity components different from the dopant component from the concentration adjusting agent.

[0096] The above-described manufacturing method can produce conditioned water with an adjusted dopant element concentration and a reduced content of impurity components. The conditioned water can be used to apply to semiconductor substrates in the manufacturing process of semiconductors or semiconductor devices.

[0097] In the addition step, a concentration adjuster containing a dopant component is added to water to be treated, such as ultrapure water, etc. Here, it is desirable to add the concentration adjuster so that the concentration of the dopant element in the adjusted water is preferably 100,000 mg / L or less, more preferably 0.1 to 50,000 mg / L, even more preferably 0.5 to 20,000 mg / L, and particularly preferably 1 to 13,000 mg / L.

[0098] In the removal step, at least a portion of impurity components other than the dopant component is selectively removed from the water to be treated, to which a concentration adjuster may be added, or from the concentration adjuster. Here, it is desirable to remove the impurity components so that the concentration of the impurity components in the water to be treated or the concentration adjuster is preferably 1 μg / L or less, more preferably 0.1 μg / L or less, even more preferably 0.01 μg / L or less, and particularly preferably 0.001 μg / L or less.

[0099] In the water quality monitoring step, the water quality (e.g., the concentration of the dopant element) of the treatment water to which the concentration adjuster has been added or the obtained adjusted water is measured to monitor whether the adjusted water has the desired water quality. A control device is used to control the amount of concentration adjuster added or the supply rate in the addition step so that the adjusted water has the desired water quality.

[0100] The above manufacturing method may further include at least one step selected from the group consisting of a hydrogen peroxide removal step for removing hydrogen peroxide from the water to be treated, a pH adjustment step for adjusting the pH of the water to be treated, an ORP adjustment step for adjusting the oxidation-reduction potential (ORP) of the water to be treated, a degassing step for degassing the water to be treated, and a gas dissolution step for dissolving an inert gas in the water to be treated.

[0101] Regarding the details of the above manufacturing method and the conditions of each step, the conditions described in the above [Apparatus for manufacturing adjusted water] section can be applied, and description here will be omitted. The manufacturing method of the present disclosure can be carried out using, for example, the above-described manufacturing apparatus.

[0102] The adjusted water produced by the manufacturing apparatus or method of the present disclosure is used, for example, to be applied to a semiconductor substrate in the manufacturing process of a semiconductor or semiconductor device, specifically, to perform a liquid doping treatment on the semiconductor substrate. For example, the adjusted water is applied to the surface of the semiconductor substrate, and then the substrate is heated to diffuse the dopant contained in the adjusted water into the semiconductor substrate. Examples of application methods include dip coating, slit coating, spin coating, spray coating, and inkjet coating. The temperature of the applied adjusted water is preferably 10 to 90°C, more preferably 20 to 45°C. In the case of dip coating, in which the semiconductor substrate is immersed in the adjusted water, the immersion time is preferably 0.5 to 60 minutes, more preferably 1 to 45 minutes. From the viewpoints of the diffusibility of the dopant element and the thermal budget, the heating temperature in the heat treatment is preferably 200 to 1000°C, more preferably 300 to 900°C, and even more preferably 400 to 800°C. From the above viewpoints, the heating time is preferably 1 minute to 10 hours, more preferably 3 minutes to 5 hours, and even more preferably 5 minutes to 60 minutes.

[0103] As the semiconductor substrate, various substrates that have conventionally been used as targets for dopant diffusion can be used without particular limitation. For example, a silicon substrate such as a silicon wafer can be used as the semiconductor substrate. The material of the surface of the semiconductor substrate to which the adjusted water is applied is not particularly limited, but examples thereof include Si, SiO2, SiCN, SiN, and SiC.

[0104] [Example of situation] The present disclosure relates to, for example, the following [1] to

[12] . [1] An apparatus for manufacturing adjusted water in which the concentration of a dopant element is adjusted, and which is used for applying to a semiconductor substrate in a semiconductor or semiconductor device manufacturing process, the apparatus comprising: a dopant element concentration adjustment device that adds a concentration adjuster containing a dopant component to water to be treated by controlling the amount of addition; and a water quality monitoring device that measures the concentration of the dopant element in the water to be treated to which the concentration adjuster has been added, or in the adjusted water, and the apparatus also comprises an impurity component removal device that selectively removes at least a portion of impurity components other than the dopant component from the water to be treated to which the concentration adjuster may have been added, or from the concentration adjuster. [2] The apparatus for producing adjusted water described in [1] above, wherein the removal device has at least one selected from the group consisting of an ion exchange resin, an ion exchange membrane, a nanofiltration membrane, a microfiltration membrane, an ultrafiltration membrane, and a reverse osmosis membrane. [3] The apparatus for producing adjusted water described in [1] or [2], wherein the removal device is located upstream or downstream of the concentration adjustment device for the dopant element on the transfer line of the water to be treated. [4] The apparatus for producing adjusted water according to [1] or [2], wherein the concentration adjusting device has the removal device. [5] The apparatus for producing adjusted water described in any one of [1] to [4], wherein the removal device removes the impurity components so that the concentration of the impurity components in the water to be treated or the concentration adjuster is 1 μg / L or less. [6] The apparatus for producing adjusted water described in any one of [1] to [5], wherein the concentration adjusting device adds the concentration adjusting agent to the water to be treated so that the concentration of the dopant element constituting the dopant component in the adjusted water is 100,000 mg / L or less. [7] The apparatus for producing adjusted water described in any one of [1] to [6], further comprising a control device that controls the amount of concentration adjuster added in the concentration adjuster based on the concentration of the dopant element measured by the water quality monitoring device. [8] The apparatus for producing conditioned water according to any one of [1] to [7], wherein the concentration adjuster adds an aqueous solution containing the dopant component as the concentration adjuster to the water to be treated. [9] The apparatus for producing adjusted water according to [8], wherein the aqueous solution contains at least one compound selected from the group consisting of a compound containing an n-type dopant and a compound containing a p-type dopant.

[10] The apparatus for producing adjusted water described in any one of [1] to [9], further comprising at least one adjusting device selected from the group consisting of a pH adjusting device for adjusting the pH of the water to be treated, and an oxidation-reduction potential adjusting device for adjusting the oxidation-reduction potential of the water to be treated.

[11] The apparatus for producing adjusted water according to any one of [1] to

[10] , which is an apparatus for producing adjusted water having an adjusted concentration of a dopant element, used for doping a semiconductor substrate in a semiconductor or semiconductor device manufacturing process.

[12] A method for producing adjusted water in which the concentration of a dopant element is adjusted, and which is used for applying to a semiconductor substrate in a semiconductor or semiconductor device manufacturing process, comprising: an addition step of adding a concentration adjuster containing a dopant component to water to be treated by controlling the amount of addition; and a water quality monitoring step of measuring the concentration of the dopant element in the water to be treated to which the concentration adjuster has been added, or in the adjusted water, wherein the production method further comprises a step of selectively removing at least a portion of impurity components other than the dopant component from the water to be treated to which the concentration adjuster may have been added, or wherein the addition step further comprises a step of selectively removing at least a portion of impurity components other than the dopant component from the concentration adjuster. [Example]

[0105] The conditioned water manufacturing device of the present disclosure will be described based on examples and application examples. The conditioned water manufacturing device of the present disclosure is not limited to the following examples and application examples.

[0106] A boric acid aqueous solution with a concentration of 4% by mass, an arsenic trioxide aqueous solution with a concentration of 4% by mass, and a phosphoric acid aqueous solution with a concentration of 50% by mass were prepared. In the following examples, the manufacturing apparatus 1 shown in FIG. 1 was used. The dopant element concentration adjusting device 10 includes a tank containing a boric acid aqueous solution, a tank containing an arsenic trioxide aqueous solution, and a tank containing a phosphoric acid aqueous solution. The impurity component removing device 20 includes a cation exchange resin (trade name KR-FC, manufactured by Kurita Water Industries Ltd.), a cation exchange resin (trade name SK1B, manufactured by Mitsubishi Chemical Corporation), or a mixed resin (trade name KR-FM, manufactured by Kurita Water Industries Ltd., a mixed resin of a cation exchange resin and an anion exchange resin).

[0107] [Example 1] The following adjusted water was produced using the production apparatus 1 shown in FIG. 1 as follows. A mixed solution was prepared by adding an aqueous solution of boric acid, an aqueous solution of arsenic acid, and an aqueous solution of phosphoric acid to ultrapure water in a concentration adjusting device 10 so that the concentrations of boric acid, arsenous acid, and phosphoric acid in the adjusted water were the values ​​shown in Table 1. The resulting mixed solution was then passed through a removal device 20 equipped with a cation exchange resin (product name KR-FC). In this way, adjusted water 1 was prepared, in which the concentrations of boric acid, arsenous acid, and phosphoric acid were each 1% by mass (10,000 ppm).

[0108] [Examples 2 to 5, Comparative Example 1] Adjusted waters 2 to 5 and 9 were prepared in the same manner as in Example 1, except that the amounts of boric acid aqueous solution and the like added were adjusted and the type of ion exchange resin and the concentration of each component in the adjusted water were changed as shown in Table 1. In Comparative Example 1, the removal device 20 equipped with a cation exchange resin was not provided.

[0109] [Examples 6 to 8] The following adjusted water was produced using the production apparatus 1 shown in FIG. 1 as follows. In a concentration adjusting device 10, an aqueous solution of boric acid, an aqueous solution of arsenous acid, or an aqueous solution of phosphoric acid was added to ultrapure water in an amount such that the concentration of boric acid, arsenous acid, or phosphoric acid in the adjusted water would be the value shown in Table 1, to prepare an aqueous solution. The obtained aqueous solution was then passed through a removal device 20 equipped with a cation exchange resin (product name KR-FC). In this way, adjusted waters 6 to 8 with a boric acid, arsenous acid, or phosphoric acid concentration of 1% by mass (10,000 ppm) were prepared.

[0110] [Application example] The amounts of dopants (amounts of P element, B element, and As element) in the adjusted water were measured using an inductively coupled plasma mass spectrometer (ICP-MS, manufactured by Agilent). Evaluation criteria for the amount of dopant in the adjusted water Small: The content of P, B, and As elements is less than 1 mg / L. Medium: The content of P, B, and As elements is 1 to 10,000 mg / L. Large: The content of P, B, and As elements exceeds 10,000 mg / L. The evaluation of the content is an evaluation of each of the elements.

[0111] The amount of metal elements in the adjusted water was measured using an inductively coupled plasma mass spectrometer (ICP-MS, manufactured by Agilent). Evaluation criteria for metal element content in adjusted water Small: The content of Na, Ca, and Fe elements is less than 1 ng / L. Medium: The content of Na, Ca, and Fe elements is 1 to 1000 ng / L. Large: The content of Na, Ca, and Fe elements exceeds 1000ng / L. The evaluation of the content is an evaluation of each of the elements.

[0112] The adjusted water obtained in the Examples or Comparative Examples was filled into a batch tank, and the silicon wafer was immersed in the adjusted water at 25°C for 10 minutes. The silicon wafer was then removed from the adjusted water. The amount of dopant on the silicon wafer was analyzed using a VPD-ICP-MS (manufactured by AEXPERT System).

[0113] The immersed silicon wafers were annealed at 800°C for 20 minutes. To determine the amount of doped ions on the silicon wafers, the volume resistance was calculated using a four-probe sheet resistance analyzer (SEMiLAb, FPP1000). Furthermore, to determine whether the doped ions were in the appropriate locations, the lifetime was measured using a carrier lifetime measurement device (SEMIlab, WT-2000PVN). The volume resistance and lifetime were evaluated according to the following criteria. The results are shown in Table 1. A longer lifetime indicates less contamination.

[0114] Evaluation criteria for volume resistivity ○:1.0×10 -4 ~1.0×10 3 Ωcm △:1.0×10 3 Ωcm super ×:1.0×10 -4 Less than Ωcm

[0115] Lifetime Evaluation Criteria 〇: More than 100μsec △: 10μsec~100μsec ×: Less than 10 μsec

[0116] [Table 1] [Explanation of symbols]

[0117] 1. Adjusted water production equipment 10...Dopant element concentration adjustment device 12...Tank containing concentration adjuster 14L…supply line 16, 20 ... Impurity component removal device 30…Water quality monitoring device 40...Control device 50...pH adjustment device 60…ORP adjustment device 70... Degassing device 80...Gas-dissolved film device 90...Hydrogen peroxide removal device W: Ultrapure water or other water to be treated L1, L2 ... Transfer lines UP...Use points

Claims

1. An apparatus for producing adjusted water having an adjusted concentration of a dopant element, which is used to apply to a semiconductor substrate in a semiconductor or semiconductor device manufacturing process, The manufacturing apparatus includes: a dopant element concentration adjusting device that adds a concentration adjusting agent containing a dopant component to the water to be treated by controlling the amount of the agent added; a water quality monitoring device that measures the concentration of the dopant element in the treatment target water or the adjusted water to which the concentration adjuster has been added; Equipped with The manufacturing apparatus includes an impurity component removal device that selectively removes at least a portion of impurity components different from the dopant component from the treatment target water or the concentration adjuster, to which the concentration adjuster may be added. Equipment for producing conditioned water.

2. 2. The apparatus for producing conditioned water according to claim 1, wherein the removal device comprises at least one membrane selected from the group consisting of an ion exchange resin, an ion exchange membrane, a nanofiltration membrane, a microfiltration membrane, an ultrafiltration membrane, and a reverse osmosis membrane.

3. 2. The apparatus for producing conditioned water according to claim 1, wherein the removal device is located upstream or downstream of the device for adjusting the concentration of the dopant element on a transfer line for the water to be treated.

4. The apparatus for producing conditioned water according to claim 1 , wherein the concentration adjusting device includes the removing device.

5. 2. The apparatus for producing conditioned water according to claim 1, wherein the removal device removes the impurity components so that the concentration of the impurity components in the treatment target water or the concentration adjuster is 1 μg / L or less.

6. The adjusted water manufacturing apparatus according to claim 1, wherein the concentration adjusting device adds the concentration adjusting agent to the water to be treated so that the concentration of the dopant element constituting the dopant component in the adjusted water is 100,000 mg / L or less.

7. The conditioned water producing apparatus according to claim 1 , further comprising a control device that controls the amount of the concentration adjuster added in the concentration adjuster based on the concentration of the dopant element measured by the water quality monitoring device.

8. The apparatus for producing conditioned water according to claim 1 , wherein the concentration adjuster adds an aqueous solution containing the dopant component as the concentration adjuster to the water to be treated.

9. 9. The apparatus for producing conditioned water according to claim 8, wherein the aqueous solution contains at least one compound selected from the group consisting of a compound containing an n-type dopant and a compound containing a p-type dopant.

10. The adjusted water manufacturing apparatus of claim 1, further comprising at least one adjusting device selected from the group consisting of a pH adjusting device that adjusts the pH of the water to be treated, and an oxidation-reduction potential adjusting device that adjusts the oxidation-reduction potential of the water to be treated.

11. The apparatus for producing conditioned water according to any one of claims 1 to 10, which is an apparatus for producing conditioned water having an adjusted concentration of a dopant element, used for doping a semiconductor substrate in a semiconductor or semiconductor device manufacturing process.

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