Semiconductor device manufacturing method, workpiece integration device, and film laminate

Abstract

To provide a manufacturing method of a semiconductor device capable of preventing a substrate from being warped while avoiding damage of the substrate and further capable of improving manufacture efficiency of a semiconductor device when manufacturing the semiconductor device by mounting a semiconductor element on the substrate, a work integration device, and a film laminate.SOLUTION: The present invention relates to a manufacturing method of a semiconductor device 11 having a structure in which a semiconductor element 7 mounted on a work W is sealed by a sealant 9. The manufacturing method includes: a work placing step of placing the work W at the side of a holding film 3 of a film laminate 5 in which the holding film 3 holding the work W on a carrier 1 is laminated; an element mounting step of mounting the semiconductor element 7 on the work W placed on the film laminate 5; a sealing step of sealing the semiconductor element 7 mounted on the work W with the sealant 9; and a desorption step of desorbing the work W and the semiconductor element 7 sealed by the sealant 9 from the film laminate 5.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element is mounted on a workpiece, such as a substrate, a workpiece integration apparatus, and a film laminate. [Background technology]

[0002] One method of mounting (connecting) semiconductor elements, such as ICs that use silicon semiconductors, to a substrate is to connect the electrodes of the semiconductor element by matching them with the conductor parts of the substrate (for example, flip-chip bonding). In this mounting method, solder bumps are formed on each of a large number of semiconductor elements, and then the large number of semiconductor elements are brought into contact with the substrate via the solder bumps.

[0003] The solder is then melted by heating using a reflow oven or the like, and the semiconductor element is mounted on the substrate. The semiconductor element mounted on the substrate is then covered and sealed with resin, thereby manufacturing a semiconductor device. As an example of the process of sealing the semiconductor element, the semiconductor element mounted on the substrate is placed inside a mold, and then resin is filled into the mold, and the resin is heated to melt and harden, thereby sealing the semiconductor element with resin.

[0004] When manufacturing such semiconductor devices, the substrate is likely to deform due to heat during the process of heating and melting the solder or the process of heating and melting and curing the resin, resulting in warping of the substrate. When the substrate warps, the distance between the semiconductor element and the substrate varies depending on the position of the semiconductor element, resulting in poor contact between the semiconductor element and the substrate. Furthermore, if resin sealing is performed while the substrate is warped, the substrate positioning accuracy deteriorates due to the substrate deformation, leading to resin leakage and other resin sealing defects during molding.

[0005] The following configurations have been proposed in the past to prevent warping of substrates due to heat during the manufacturing process of semiconductor devices: In the first conventional method, after a semiconductor element is brought into contact with the substrate, a warpage correction jig is mounted on the substrate so as to surround the semiconductor element, and the weight of the warpage correction jig fixes the substrate around the semiconductor element, thereby preventing warping of the substrate (see Patent Document 1).

[0006] Furthermore, Patent Document 1 proposes a configuration in which a magnet is placed under the substrate and a stainless steel jig is used as a warpage correction jig, thereby fixing the substrate around the semiconductor element by the magnetic force generated between the magnet and the stainless steel jig.

[0007] A second conventional method for preventing warping of a substrate due to heat is to bring a semiconductor element into contact with the substrate, then clamp the left and right ends of the substrate with clamping claws to support the substrate, and pull the substrate in the direction of expansion (see Patent Document 2).

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-232582 [Patent Document 2] Japanese Patent Application Publication No. 2017-087551 DISCLOSURE OF THE INVENTION [Problem to be solved by the invention]

[0009] However, the above-mentioned conventional method has the following problem. Specifically, in recent years, substrates have been rapidly thinned. In conventional methods, a relatively large force is applied to the substrate when preventing warpage of the substrate. Therefore, when the conventional method is applied to a thin substrate, there is a concern that the thinned substrate will not be able to withstand the stress and will suffer damage such as cracks, chips, or distortion.

[0010] Furthermore, the conventional method requires a series of steps, such as placing a warpage correction jig to apply pressure to the substrate and then removing the warpage correction jig, or gripping the substrate with clamps to apply a tensile force to the substrate and then releasing the clamps from gripping the substrate. These series of steps take time, which makes it difficult to improve the manufacturing efficiency of semiconductor devices with the conventional method.

[0011] The present invention has been made in consideration of the above circumstances, and its main object is to provide a semiconductor device manufacturing method, a work integration device, and a film laminate that can prevent warping of a substrate while avoiding damage to the substrate when manufacturing a semiconductor device by mounting semiconductor elements on the substrate, and that can also improve the manufacturing efficiency of semiconductor devices. [Means for solving the problem]

[0012] In order to achieve the above object, the present invention has the following configuration. That is, the present invention is a method for manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; Equipped with The support film is made of a porous material. It is characterized by the following.

[0013] (Operation and Effect) According to this configuration, in the process of placing the workpiece, the workpiece is placed on the side of the holding film of the film laminate in which the holding film that holds the workpiece is laminated on the support body. That is, as a preliminary step to mounting the semiconductor element on the workpiece, the workpiece is placed on the side of the holding film of the film laminate.

[0014] The retaining film holds the workpiece, and placing the workpiece on the retaining film side of the film laminate ensures the workpiece's flatness. That is, the retaining film prevents the workpiece from deforming due to heating or other factors, causing parts of the workpiece to lift up from the film laminate during processes such as mounting and sealing semiconductor elements. This more reliably prevents semiconductor element mounting defects or misalignment.

[0015] The holding film also contacts a wide area of ​​the workpiece to hold it in place. In other words, the holding film applies a holding force evenly across the wide area of ​​the workpiece, preventing deformation of the workpiece. This more reliably prevents damage to the workpiece in areas where a large physical pressure, such as pressing or gripping, is applied to a narrow area of ​​the workpiece.

[0016] By simply placing the work on the holding film side of the film laminate, a holding force that prevents deformation of the work acts on the work. In other words, the time required for the process of preventing deformation of the work can be significantly reduced. Therefore, it is possible to prevent deformation of the work while improving the manufacturing efficiency of semiconductor devices.

[0017] In order to achieve the above object, the present invention may have the following configuration. That is, the present invention is a method for manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; Equipped with The film laminate after the workpiece and the semiconductor element are removed in the removing process is reused in the next workpiece mounting process. It is characterized by the following.

[0018] (Actions and Effects) With this configuration, since the retaining film is in film form, it is possible to prevent a situation in which part of the constituent material of the retaining film peels off and adheres to the workpiece as residue when the semiconductor device is separated from the film laminate. Therefore, the film laminate separated from the semiconductor device in the first removal process in the semiconductor device manufacturing process can be reused in the next (second) workpiece mounting process. In other words, since there is no need to manufacture a film laminate in the semiconductor device manufacturing process from the second time onwards, the time required for mass production of semiconductor devices can be shortened and costs can be significantly reduced. Furthermore, the amount of support and retaining film discarded can be reduced, thereby reducing the burden on the environment.

[0019] In the above-mentioned invention, the support film is preferably made of a porous material containing silicone or a fluorine compound.

[0020] (Actions and Effects) According to this configuration, by placing a workpiece on the holding film, a force is generated on the porous surface of the holding film that holds the workpiece by adsorption. That is, by placing the workpiece on the film laminate, an adsorption force is generated in the direction from the workpiece to the holding film. This adsorption force inhibits the workpiece from deforming and causing a portion of the workpiece to lift off the film laminate. Therefore, in each process of manufacturing a semiconductor device, the workpiece can maintain a flat shape in close contact with the holding film, thereby improving the positional accuracy of the semiconductor element mounting and the connection accuracy of the semiconductor element and the workpiece.

[0021] In order to achieve the above object, the present invention may have the following configuration. That is, the present invention is a method for manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; Equipped with The film laminate is configured to be smaller than the workpiece in a plan view, and the workpiece is placed on the film laminate in such a way that the outer periphery of the workpiece protrudes outward from the film laminate. It is characterized by the following.

[0022] (Actions and Effects) According to this configuration, the workpiece is placed on the film laminate so that its outer periphery protrudes outside the film laminate. Therefore, when sealing the semiconductor element with an encapsulant, the outer periphery of the workpiece can be sealed from above and below by clamping it with dies or the like. The pressure applied by the dies from above and below is set higher than the resin sealing pressure, and there is a concern that if the film laminate is clamped between the dies from above and below, the holding film may be severely dented in parts, making it difficult to reuse the film laminate. This concern can be avoided by having the outer periphery of the workpiece protrude outside the film laminate and clamping only the protruding outer periphery of the workpiece between the dies from above and below.

[0023] Furthermore, in the above-mentioned invention, it is preferable that the workpiece placing process includes an arrangement process of arranging the workpiece and the film laminate in the internal space of a chamber having an upper housing and a lower housing, a decompression process of decompressing the internal space of the chamber, and a pressurization process of pressing the workpiece against the film laminate while the internal space of the chamber is decompressed.

[0024] (Operation and Effect) According to this configuration, the pressurizing step of pressing the workpiece onto the film laminate is carried out under reduced pressure using a chamber. In other words, the workpiece is brought into close contact with the film laminate in a state in which the space between the holding film and the workpiece is degassed, so that it is possible to avoid a decrease in the holding force of the holding film on the workpiece due to air being trapped between the holding film and the workpiece.

[0025] In order to achieve the above object, the present invention may have the following configuration. That is, the present invention is a method for manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; Equipped with The workpiece placing process includes: a placement step of placing the workpiece and the film stack in an internal space of a chamber having an upper housing and a lower housing; a decompression step of decompressing the internal space of the chamber; a pressurizing step of pressing the workpiece against the film laminate while the internal space of the chamber is decompressed; a separating step of separating the workpiece and the film stack disposed in the internal space of the chamber to form a gap between the workpiece and the film stack; Equipped with The decompression process includes: The method is characterized in that the internal space of the chamber is depressurized while the gap is formed between the workpiece and the film stack during the separating process.

[0026] (Operation and Effect) According to this configuration, the pressure is reduced with a gap formed between the workpiece and the film laminate, so the space between the workpiece and the film laminate is reliably degassed. In other words, it is possible to reliably prevent air from being drawn in between the workpiece and the film laminate when the workpiece is brought into contact with the film laminate. Therefore, it is possible to reliably avoid a situation in which the holding force of the holding film on the workpiece is reduced due to air being drawn in.

[0027] In addition, in the above-mentioned invention, the sealing process includes a resin filling process in which the semiconductor element mounted on the workpiece is placed in the internal space of a sealing mold consisting of an upper mold and a lower mold, and the internal space is filled with the sealing resin in a molten state; and a resin hardening process in which the filled sealing resin is hardened to seal the semiconductor element with the sealing resin, and it is preferable that the detachment process detaches the workpiece and the semiconductor element encapsulated with the sealing resin from the film laminate and detaches the upper mold from the workpiece.

[0028] (Operations and Effects) This configuration allows the semiconductor element to be encapsulated with high precision through the resin filling process and resin hardening process using a mold. In addition, the process of removing the encapsulated semiconductor element and workpiece composite from the film laminate and the process of removing the upper mold from the workpiece are performed simultaneously, thereby reducing the time required to manufacture a semiconductor device.

[0029] Furthermore, in the above-described invention, the sealing process preferably includes a resin filling process in which the semiconductor element mounted on the workpiece is placed in the internal space of a sealing mold consisting of an upper mold and a lower mold, and the internal space is filled with the molten sealing resin, and a resin hardening process in which the filled sealing resin is hardened to seal the semiconductor element with the sealing resin, and the detachment process preferably includes a mold detachment process in which the upper mold is detached from the workpiece, and a laminate detachment process in which, after the mold detachment process, the workpiece and the semiconductor element encapsulated with the sealing resin are detached from the film laminate.

[0030] (Operations and Effects) According to this configuration, the semiconductor element can be encapsulated with high precision through the resin filling process and resin hardening process using a mold. Furthermore, since the process of detaching the upper mold from the workpiece is completed, the process of detaching the composite of the encapsulated semiconductor element and the workpiece from the film laminate is performed, which avoids the operation of the semiconductor device manufacturing equipment from becoming complicated due to multiple processes being performed simultaneously.

[0031] Furthermore, in the above-described invention, the sealing process preferably includes a resin filling process in which the semiconductor element mounted on the workpiece is placed in the internal space of a sealing mold consisting of an upper mold and a lower mold, and the internal space is filled with the molten sealing resin, and a resin hardening process in which the filled sealing resin is hardened to seal the semiconductor element with the sealing resin, and the detachment process preferably includes a mold detachment process in which the upper mold is detached from the workpiece, an additional curing process in which the workpiece and the semiconductor element encapsulated with the sealing resin are heated while the workpiece is placed on the film laminate after the mold detachment process to harden the sealing resin, and a laminate detachment process in which the workpiece and the semiconductor element encapsulated with the sealing resin are detached from the film laminate after the additional curing process.

[0032] (Actions and Effects) This configuration allows semiconductor elements to be encapsulated with high precision through the resin filling process and resin curing process using a mold. Furthermore, if additional curing is required after the encapsulation process by reheating and curing the encapsulating resin in an oven or the like, the additional curing is performed while the composite of the encapsulated semiconductor element and workpiece is placed on the film laminate after the process of separating the upper mold from the workpiece is completed. This process prevents the workpiece from warping during the additional curing process by using the holding film, thereby avoiding situations where warping of the workpiece would hinder the transport of the composite of the semiconductor element and workpiece after additional curing has been completed.

[0033] In order to achieve the above object, the present invention may have the following configuration. That is, the present invention is a workpiece integration device that integrates a workpiece and a film laminate in which a holding film that holds the workpiece is laminated on a support, a chamber having an upper housing and a lower housing; a placement mechanism that places the workpiece and the film stack in the internal space of the chamber; a decompression mechanism for decompressing the internal space of the chamber; a film contact mechanism that brings the workpiece into contact with the film laminate while the internal space of the chamber is decompressed; Equipped with 、 The support film is made of a porous material. It is characterized by the following. The present invention also provides a workpiece integration device that integrates a workpiece and a film laminate in which a support and a holding film that holds the workpiece are laminated on the support, a chamber having an upper housing and a lower housing; a placement mechanism that places the workpiece and the film stack in the internal space of the chamber; a decompression mechanism for decompressing the internal space of the chamber; a film contact mechanism that brings the workpiece into contact with the film laminate while the internal space of the chamber is decompressed; a separation mechanism that separates the workpiece and the film stack disposed in the internal space of the chamber to form a gap between the workpiece and the film stack; Equipped with The pressure reducing mechanism is The internal space of the chamber is depressurized while the gap is formed between the workpiece and the film stack by the separating mechanism. It is characterized by the following.

[0034] (Actions and Effects) According to this configuration, the workpiece is brought into contact with the side of the holding film of the film laminate that is stacked on the support body, and the workpiece and the film laminate are integrated.

[0035] The retaining film holds the workpiece, and by contacting the workpiece with the retaining film side of the film laminate, the flatness of the workpiece on the film laminate is ensured. In other words, when the process of mounting a semiconductor element and the process of sealing the semiconductor element are performed after the workpiece and the film laminate are integrated, the retaining film can prevent the workpiece from deforming due to heating or the like, causing part of the workpiece to lift up from the film laminate. This more reliably prevents the occurrence of mounting defects or misalignment of the semiconductor element.

[0036] Furthermore, the step of bringing the workpiece into contact with the film laminate is carried out under reduced pressure using a chamber. That is, the workpiece is brought into close contact with the film laminate in a state in which the space between the holding film and the workpiece is degassed, so that it is possible to avoid a decrease in the holding force of the holding film on the workpiece due to air being trapped between the holding film and the workpiece.

[0037] In order to achieve the above object, the present invention may have the following configuration. That is, the present invention is a film laminate characterized by laminating a metal plate-shaped support body and a holding film that is made of a porous material containing silicone or a fluorine compound and that holds a workpiece.

[0038] (Actions and Effects) According to this configuration, the holding film is made of a porous material containing silicone or a fluorine compound, thereby improving the holding force of the holding film on the workpiece. That is, by placing a workpiece on the holding film, a force is generated on the porous surface of the holding film that adsorbs and holds the workpiece. That is, by placing the workpiece on the film laminate, an adsorption force is generated in the direction from the workpiece to the holding film. This adsorption force inhibits the workpiece from deforming and attempting to lift a portion of the workpiece from the film laminate. Therefore, during the process of mounting a semiconductor element on a workpiece placed on the film laminate and the process of encapsulating the mounted semiconductor element with encapsulating resin or the like, the workpiece can maintain a flat shape in close contact with the holding film. As a result, using this film laminate can improve the accuracy of the semiconductor element mounting position and the connection accuracy between the semiconductor element and the workpiece.

[0039] In order to achieve the above object, the present invention may have the following configuration. That is, the present invention is a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; It is characterized in that it is produced by

[0040] (Operation and Effect) According to this configuration, in the process of placing the workpiece, the workpiece is placed on the side of the holding film of the film laminate in which the holding film that holds the workpiece is laminated on the support body. That is, as a preliminary step to mounting the semiconductor element on the workpiece, the workpiece is placed on the side of the holding film of the film laminate.

[0041] The retaining film holds the workpiece, and placing the workpiece on the retaining film side of the film laminate ensures the workpiece's flatness. That is, the retaining film prevents the workpiece from deforming due to heating or other factors, causing parts of the workpiece to lift up from the film laminate during processes such as mounting and sealing semiconductor elements. This more reliably prevents semiconductor element mounting defects or misalignment.

[0042] The holding film also contacts a wide area of ​​the workpiece to hold it in place. In other words, the holding film applies a holding force evenly across the wide area of ​​the workpiece, preventing deformation of the workpiece. This more reliably prevents damage to the workpiece in areas where a large physical pressure, such as pressing or gripping, is applied to a narrow area of ​​the workpiece.

[0043] By simply placing the work on the holding film side of the film laminate, a holding force that prevents deformation of the work acts on the work. In other words, the time required for the process of preventing deformation of the work can be significantly reduced. Therefore, it is possible to prevent deformation of the work while improving the manufacturing efficiency of semiconductor devices. [Effects of the Invention]

[0044] In the semiconductor device manufacturing method, workpiece integration device, and film laminate according to the present invention, in the workpiece placement process, the workpiece is placed on the side of the holding film of the film laminate in which the holding film for holding the workpiece is laminated on a support body. That is, as a preliminary step to mounting the semiconductor element on the workpiece, the workpiece is placed on the side of the holding film of the film laminate.

[0045] The retaining film holds the workpiece, and placing the workpiece on the retaining film side of the film laminate ensures the workpiece's flatness. That is, the retaining film prevents the workpiece from deforming due to heating or other factors, causing parts of the workpiece to lift up from the film laminate during processes such as mounting and sealing semiconductor elements. This more reliably prevents semiconductor element mounting defects or misalignment.

[0046] The holding film also contacts a wide area of ​​the workpiece to hold it in place. In other words, the holding film applies a holding force evenly across the wide area of ​​the workpiece, preventing deformation of the workpiece. This more reliably prevents damage to the workpiece in areas where a large physical pressure, such as pressing or gripping, is applied to a narrow area of ​​the workpiece.

[0047] By simply placing the work on the holding film side of the film laminate, a holding force that prevents deformation of the work acts on the work. In other words, the time required for the process of preventing deformation of the work can be significantly reduced. Therefore, it is possible to prevent deformation of the work while improving the manufacturing efficiency of semiconductor devices. [Brief explanation of the drawings]

[0048] [Figure 1] 1 is a flowchart illustrating steps in a method for manufacturing a semiconductor device according to an embodiment. [Figure 2]1A and 1B are cross-sectional views showing the configuration of a semiconductor device at each step of a semiconductor device manufacturing method according to an embodiment, where (a) shows the state before the start of step S1, (b) shows the state after completion of step S1, (c) shows the state after completion of step S2, (d) shows the state after completion of step S3, (e) shows the state after completion of step S5, and (f) shows the state after completion of step S6. [Figure 3] FIG. 2 is a vertical cross-sectional view of the workpiece mounting mechanism according to the embodiment. [Figure 4] FIG. 2 is a longitudinal cross-sectional view of a chamber according to an embodiment. [Figure 5] FIG. 2 is a vertical cross-sectional view of a sealing mechanism according to an embodiment. [Figure 6] 1A and 1B are diagrams illustrating step S1 according to an embodiment, in which (a) shows the carrier before a film material is applied, (b) shows the state in which the film material is being applied to the carrier, and (c) shows the carrier after the film material has been applied. [Figure 7] FIG. 10 is a diagram illustrating step S2 according to the embodiment. [Figure 8] FIG. 10 is a diagram illustrating step S2 according to the embodiment. [Figure 9] FIG. 10 is a diagram illustrating step S2 according to the embodiment. [Figure 10] FIG. 10 is a diagram illustrating step S2 according to the embodiment. [Figure 11] FIG. 10 is a diagram illustrating step S2 according to the embodiment. [Figure 12] FIG. 10 is a diagram illustrating step S2 according to the embodiment. [Figure 13] FIG. 10 is a diagram illustrating step S3 according to the embodiment. [Figure 14] FIG. 10 is a diagram illustrating step S3 according to the embodiment. [Figure 15] FIG. 10 is a diagram illustrating step S3 according to the embodiment. [Figure 16] FIG. 10 is a diagram illustrating step S5 according to the embodiment. [Figure 17]FIG. 10 is a diagram illustrating step S5 according to the embodiment. [Figure 18] FIG. 10 is a diagram illustrating step S5 according to the embodiment. [Figure 19] FIG. 10 is a diagram illustrating step S5 according to the embodiment. [Figure 20] FIG. 10 is a diagram illustrating step S6 according to the embodiment. [Figure 21] FIG. 10 is a diagram illustrating step S6 according to the embodiment. [Figure 22] FIG. 10 is a diagram illustrating step S7 according to the embodiment. [Figure 23] 1A and 1B are diagrams illustrating problems associated with a conventional example: (a) is a diagram showing the mounting process of a semiconductor element in a conventional configuration that does not use a holding film, (b) is a diagram showing a state in which the workpiece is deformed, causing a mounting failure and misalignment of the semiconductor element, and (c) is a diagram showing a state in which the workpiece is misaligned horizontally relative to the carrier. [Figure 24] 1A and 1B are diagrams illustrating problems associated with a conventional example, in which (a) is a diagram illustrating the configuration of the conventional example according to Patent Document 1, and (b) is a diagram illustrating a state in which a workpiece is deformed in the conventional example according to Patent Document 1. [Figure 25] 10A and 10B are diagrams illustrating the effects of the configuration of the embodiment. [Figure 26] 10A and 10B are diagrams illustrating the configuration of a modified example, in which (a) is a perspective view showing a conveying sheet and a workpiece, (b) is a diagram illustrating the state in which the conveying sheet is unwound to position the workpiece in step S2 according to the modified example, and (c) is a diagram illustrating the state in which a chamber has been formed in step S2 according to the modified example. [Figure 27] 10A and 10B are diagrams illustrating the configuration of a modified example, in which (a) shows a state in which the workpiece is deformed into a convex shape by the pressure difference in step S2 according to the modified example, and (b) shows a state in which the workpiece is pressed into contact with the holding film by the pressure difference in step S2 according to the modified example. [Figure 28] FIG. 10 is a diagram illustrating the configuration of a modified example. [Figure 29] FIG. 10 is a diagram illustrating step S2 according to a modified example. [Figure 30] FIG. 10 is a diagram illustrating step S2 according to a modified example. [Figure 31] FIG. 10 is a diagram illustrating step S2 according to a modified example. [Figure 32] FIG. 10 is a diagram illustrating step S2 according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0049] An embodiment of the present invention will now be described with reference to the drawings. First, an outline of a method for manufacturing a semiconductor device according to this embodiment will be described with reference to Figures 1 and 2. Figure 1 is a flowchart of the method for manufacturing a semiconductor device according to this embodiment, and Figure 2 is a cross-sectional view showing the configuration of the semiconductor device at each step of the manufacturing method.

[0050] In the method for manufacturing a semiconductor device according to the present invention, first, a holding film 3 is laminated on a carrier 1 shown in Fig. 2(a) to form a film laminate 5 shown in Fig. 2(b) (step S1). Next, a work W is held by the holding film 3 as shown in Fig. 2(c) (step S2). Then, a connecting conductor portion (not shown) of the work W is connected to the bumps 8 of the semiconductor element 7, and the semiconductor element 7 is mounted on the work W as shown in Fig. 2(d) (step S3).

[0051] After the semiconductor element 7 is mounted, plasma treatment is performed (step S4), and the semiconductor element 7 is sealed with a sealing body 9 (step S5) as shown in FIG. 2(e). After the semiconductor element 7 is sealed with the sealing body 9, the film laminate 5 is separated from the workpiece W to produce a semiconductor device 11 as shown in FIG. 2(f) (step S6). In this embodiment, the semiconductor device 11 refers to a structure in which one or more semiconductor elements 7 mounted on the workpiece W are each sealed with a sealing body 9.

[0052] The carrier 1 is a plate-like member made of metal or the like, and supports the workpiece W. An example of the carrier 1 is a rectangular stainless steel plate or glass plate. The thickness of the carrier 1 is, for example, about 100 μm to 1 mm, and more preferably about 500 μm. The thickness of the carrier 1 may be changed as appropriate depending on various conditions, such as the thickness of the workpiece W.

[0053] The holding film 3 is a thin layer formed on the carrier 1, and holds the workpiece W in a flat state. Preferred examples of the material constituting the holding film 3 include a porous body containing silicone or a porous body containing a fluorine compound. In the present invention, silicone is a polymeric compound containing silicon. In the present invention, a fluorine compound is a polymeric compound containing fluorine. An example of a fluorine compound is polytetrafluoroethylene (PTFE). When the holding film 3 is a porous body, a preferred example of the proportion of bubbles formed is approximately 30% to 70%. In this embodiment, a porous body containing silicone is used as the material (film material) of the holding film 3.

[0054] Because the holding film 3 is porous, the holding film 3 exhibits high adhesiveness to the workpiece W placed on the surface of the holding film 3. In other words, the adhesiveness of the holding film 3 can improve the holding power of the holding film 3 to the workpiece W. In particular, if the workpiece W has fine irregularities formed thereon, the porous nature of the holding film 3 allows the irregularities of the workpiece W to penetrate into the holes formed on the surface of the holding film 3. Therefore, the adhesion between the holding film 3 and the workpiece W can be further improved.

[0055] The semiconductor elements 7 are elements that are mounted on the work W to form a wiring circuit. In FIG. 2(d), two semiconductor elements 7 are mounted on the work W, but the number of semiconductor elements 7 mounted on the work W may be changed as appropriate. Examples of the semiconductor elements 7 include ICs that use silicone semiconductors, organic EL elements that use organic semiconductors, and processors or memories that integrate various arithmetic circuits. Bumps 8 including solder balls are formed on the underside of the semiconductor elements 7. The semiconductor elements 7 are connected to the work W via the bumps 8.

[0056] Examples of the workpiece W include a glass substrate, an organic substrate, a circuit board, and a silicon wafer. In this embodiment, the workpiece W is substantially rectangular, but the shape of the workpiece W may be changed as needed to any shape, such as a rectangle, a circle, or a polygon. The thickness of the workpiece W can be changed as needed, but as an example, a substrate having a thickness of 100 μm or less is used.

[0057] The sealing material 9 seals the semiconductor element 7, and examples of the constituent material include epoxy resin and phenol resin, but there is no particular limitation as long as the material can be used to seal the semiconductor element 7. In this embodiment, a solid thermosetting resin is used as the sealing material 9. The sealing material 9 corresponds to the sealing resin in the present invention.

[0058] Here, each mechanism constituting the apparatus for manufacturing the semiconductor device 11 will be described. The semiconductor device manufacturing apparatus according to the present invention comprises a film laminating mechanism 13, a workpiece mounting mechanism 15, a semiconductor mounting mechanism 17, and a sealing mechanism 19. The semiconductor device manufacturing apparatus also comprises a plasma processing device (not shown). The plasma processing device cleans the top surface of the workpiece W by plasma discharge, and any known device may be used. The workpiece mounting mechanism 15 corresponds to the workpiece integration device in the present invention.

[0059] As shown in FIG. 6, the film laminating mechanism 13 includes a mounting table 21 and an applicator 23. The mounting table 21 is, for example, a metal chuck table, and holds the carrier 1 in a horizontal position. The mounting table 21 is connected to a vacuum device (not shown), and is preferably configured to hold the carrier 1 by suction, since this allows the carrier 1 to be held more stably. The applicator 23 applies a liquid film material to the carrier 1 to form a layer of the support film 3. Examples of the applicator 23 include a kiss roll coater, a Mayer bar coater, a die coater, a gravure coater, and a brush, but there is no particular limitation as long as it forms a layer of the support film 3 on the top surface of the carrier 1.

[0060] 3, the workpiece mounting mechanism 15 includes a workpiece supply section 25, a workpiece transport mechanism 27, and a chamber 29. Inside the workpiece supply section 25, workpieces W are stored in multiple stages with the surfaces on which semiconductor elements 7 are to be mounted facing upward.

[0061] The workpiece transport mechanism 27 includes a horseshoe-shaped holding arm 28. A plurality of slightly protruding suction pads are provided on the holding surface of the holding arm 28, and the workpiece W is suction-held via the suction pads. The holding arm 28 is also connected to a compressed air device via a flow path formed therein and a connecting flow path connected to the base end of the flow path. In this embodiment, the holding arm 28 is provided with a suction pad on its underside, and is configured to suction-hold the peripheral portion of the upper surface of the workpiece W. A movable base (not shown) is provided in the workpiece transport mechanism 27, and the movable base allows the workpiece transport mechanism 27 to move horizontally and vertically while holding the workpiece W. The above-described configuration of the workpiece transport mechanism 27 is an example, and is not limited to this as long as it is configured to transport the workpiece W.

[0062] The chamber 29 is composed of a lower housing 29A and an upper housing 29B. A holding table 31 is housed inside the lower housing 29A. The holding table 31 holds the film laminate 5 and is, for example, a metal chuck table. The holding table 31 is preferably configured to hold the film laminate 5 by suction. The lower housing 29A, together with the holding table 31, is configured to be able to move back and forth between a set position P1 and a mounting position P2 along a rail 30 extending in the y direction. A joint 33 is formed on the upper surface of the lower housing 29A.

[0063] The upper housing 29B is disposed above the mounting position P2 and is configured to be movable up and down by a lifting platform (not shown). A joint 34 is formed on the underside of the upper housing 29B. That is, when the lower housing 29A is moved to the mounting position P2 and the upper housing 29B is lowered, the lower housing 29A and the upper housing 29B are joined via the joints 33 and 34 to form the chamber 29. The joining surfaces of the joints 33 and 34 are preferably subjected to a release treatment, such as fluorine treatment. By joining the joints 33 and 34, the chamber 29 is configured so that the internal space is sealed.

[0064] A pressing member 35 is provided inside the upper housing 29B. A cylinder 37 is connected to the top of the pressing member 35, and the pressing member 35 can be raised and lowered inside the chamber 29 by the operation of the cylinder 37. The lower surface of the pressing member 35 is flat, and is configured so that the size of this lower surface is larger than the size of the workpiece W. When the pressing member 35 descends inside the chamber 29, it presses the film laminate 5 and the workpiece W that are stacked and placed on the holding table 31. This pressing brings the workpiece W into close contact with the holding film 3 of the film laminate 5, and the workpiece W is held by the holding film 3.

[0065] As shown in Figure 5, the chamber 29 is connected to a vacuum device 39 via a pressure reduction flow path 38. An electromagnetic valve 40 is disposed in the flow path 38. The chamber 29 is also connected to a flow path 42 equipped with an electromagnetic valve 41 for venting to the atmosphere. When the vacuum device 39 is activated, the internal space of the chamber 29 is evacuated and reduced in pressure. That is, the workpiece mounting mechanism 15 is configured to press the workpiece W toward the film laminate 5 in a vacuum reduced pressure state inside the chamber 29. The opening and closing operations of the electromagnetic valves 40 and 41, and the operation of the vacuum device 39 are controlled by a control unit 43.

[0066] The semiconductor mounting mechanism 17 includes a mounting table 45, a flux application mechanism, a semiconductor transport mechanism, and a heating mechanism (not shown). The mounting table 45 mounts the workpiece W that is held by suction on the film laminate 5. The flux application mechanism applies flux FS to the workpiece W as shown in FIG. 13. The semiconductor transport mechanism transports and places the semiconductor element 7 on the workpiece W to which the flux FS has been applied. The heating mechanism is, for example, a reflow furnace, and heats the workpiece W on which the semiconductor element 7 is mounted, thereby mounting the semiconductor element 7 on the workpiece W.

[0067] As shown in Fig. 5, the sealing mechanism 19 includes an upper mold 47 and a lower mold 49. The upper mold 47 is connected in communication with a sealing material supply unit 53 via a flow path 51. The sealing material supply unit 53 supplies the sealing material 9 to the internal space of the upper mold 47 via the flow path 51. The upper mold 47 is configured to be movable up and down by a lifting platform (not shown). When the upper mold 47 is lowered, the upper mold 47 and the lower mold 49 sandwich the portion of the workpiece W that protrudes outside the film laminate 5 (outer peripheral portion WS), as shown in Fig. 18, to form a mold 50.

[0068] A holding table 55 is housed inside the lower mold 49. The holding table 55 is used to place and hold the workpiece W on which the semiconductor elements 7 are mounted together with the film laminate 5, and is, for example, a metal chuck table. The holding table 55 is connected to a rod 57 that passes through the lower mold 49. The other end of the rod 57 is drivingly connected to an actuator 59 that includes a motor or the like. Therefore, the holding table 55 can move up and down inside the lower mold 49.

[0069] The semiconductor device manufacturing apparatus further includes an equipment transfer mechanism 61. The equipment transfer mechanism 61 is connected to a movable table 63 and is configured to be able to move up and down and horizontally. The equipment transfer mechanism 61 is also flat overall and configured to adsorb the layer of encapsulant 9 that encapsulates the semiconductor element 7 in the semiconductor device 11. In other words, the equipment transfer mechanism 61 adsorbs and holds the semiconductor device 11 by adsorbing the layer of encapsulant 9, and is configured to transport the held semiconductor device 11 to a semiconductor device storage unit (not shown).

[0070] <Overview of operation> Here, the operation of the semiconductor device manufacturing apparatus according to the embodiment will be described in detail with reference to the flowchart shown in FIG.

[0071] Step S1 (Creating a film laminate) When a command to manufacture a semiconductor device is issued, first, a film laminate 5 is produced in the film laminating mechanism 13. That is, a carrier 1 is transported from a carrier supply unit (not shown) to the film laminating mechanism 13, and as shown in Fig. 6(a), the carrier 1 is placed on the placement table 21. The placement table 21 adsorbs and holds the carrier 1 by operating a vacuum device (not shown) or the like.

[0072] When the carrier 1 is held by the mounting table 21, the application member 23 applies a liquid film material (liquid silicone porous body in this embodiment) to the upper surface of the carrier 1, as shown in FIG. 6(b). By applying the liquid film material, a layer of the support film 3 is formed on the layer of the carrier 1. After the liquid film material is applied, the film material is dried. By drying, the film material becomes a solid sheet, and as shown in FIG. 6(c), a film laminate 5 is created in which the layer of the carrier 1 and the layer of the support film 3 in the form of a solid sheet are laminated. The method for drying the liquid film material may be changed as appropriate depending on the conditions, such as natural drying or heat drying.

[0073] Step S2 (holding the workpiece on the film) After the film laminate 5 is produced, the process of holding the workpiece W on the holding film 3 begins. At this time, in the workpiece mounting mechanism 15, the lower housing 29A has already been moved to the set position P1. When the process of step S2 begins, the film laminate 5 is carried out from the mounting table 21 by a transport mechanism (not shown) and transported to the workpiece mounting mechanism 15. The film laminate 5 is then placed on the holding table 31 by the transport mechanism, as shown in FIG. 7.

[0074] When the film stack 5 is placed on the holding table 31, the work transport mechanism 27 starts transporting the work W. That is, the work transport mechanism 27 inserts the holding arm 28 between the workpieces W stored in multiple stages inside the work supply section 25. The holding arm 28 suction-holds the outer periphery of the upper surface of the workpiece W and carries it out, and the work transport mechanism 27 moves above the holding table 31. Thereafter, the work transport mechanism 27 descends, and the suction of the workpiece W by the holding arm 28 is released, and the workpiece W is placed on the side of the film stack 5 that faces the holding film 3, as shown in FIG. 8 .

[0075] When the workpiece W is placed on the holding film 3, the lower housing 29A moves from the set position P1 to the mounting position P2 along the rails 30 as shown in Fig. 9. When the lower housing 29A moves to the mounting position P2, the upper housing 29B starts to descend. As the upper housing 29B descends, the lower housing 29A and the upper housing 29B are joined together to form the chamber 29.

[0076] After forming the chamber 29, the leak electromagnetic valve 41 is closed and the electromagnetic valve 40 is opened to operate the vacuum device 39 and reduce the pressure in the internal space of the chamber 29. When the pressure inside the chamber 29 is reduced to a predetermined pressure (for example, a vacuum state or a reduced pressure state of about 100 Pa), the control unit 43 closes the electromagnetic valve 40 and stops the operation of the vacuum device 39. By reducing the pressure inside the chamber 29, the air present between the workpiece W and the holding film 3 is evacuated to the outside of the chamber 29.

[0077] After the pressure inside the chamber 29 is reduced, the control unit 43 operates the cylinder 37 to lower the pressing member 35. As shown in FIG. 11 , the pressing member 35 is lowered, whereby the workpiece W is pressed against the film laminate 5 supported on the holding table 31.

[0078] When the workpiece W is pressed (pressurized) against the film laminate 5, the adhesion between the workpiece W and the holding film 3 increases, and the workpiece W is attached to the film laminate 5. In other words, when the workpiece W is pressed against the holding film 3, which is a porous body, an adhesive force of the holding film 3 to the workpiece W is generated, and the workpiece W is adsorbed and held by the holding film 3 due to this adhesive force. Note that the structure in which the workpiece W is attached to the film laminate 5 by being adsorbed and held by the holding film 3 is referred to as a "work-attached body WF."

[0079] After the workpiece WF is created by the pressing member 35 pressing under reduced pressure, the reduced pressure in the chamber 29 is released. That is, the control unit 43 stops the operation of the vacuum device 39 and opens the electromagnetic valve 41 for leaking, returning the air pressure inside the chamber 29 to atmospheric pressure. Thereafter, as shown in FIG. 12, the upper housing 29B is raised to open the chamber 29 to the atmosphere. Once the chamber 29 is open to the atmosphere, the lower housing 29A returns from the mounting position P2 to the set position P1 along the rail 30A. By returning the lower housing 29A to the set position P1, the workpiece WF can be removed.

[0080] Step S3 (mounting semiconductor elements) After the work W is attached to the holding film 3 to create a work-mounted body WF, the process of mounting the semiconductor element 7 begins. First, the work-mounted body WF is carried out from the holding table 31 by a transport mechanism (not shown) and transported to the loading table 45 of the semiconductor mounting mechanism 17. The work-mounted body WF is placed on the loading table 45, which suction-holds the work-mounted body WF. Then, as shown in FIG. 13, a flux application mechanism (not shown) applies flux FS to the top surface of the work W.

[0081] While the flux FS is being applied, the semiconductor transport mechanism transports the semiconductor element 7 above the workpiece WF. Then, the semiconductor element 7 is aligned so that the connection conductors of the workpiece W (not shown) face the bumps 8 of the semiconductor element 7. Once the alignment is complete, the semiconductor transport mechanism lowers the semiconductor element 7, bringing the semiconductor element 7 into contact with the workpiece W via the flux FS, as shown in FIG.

[0082] After the semiconductor element 7 and the workpiece W are brought into contact with each other, the heating mechanism heats the workpiece W and the semiconductor element 7. This heat melts the solder balls contained in the bumps 8, and the semiconductor element 7 is fixed to the workpiece W via the bumps 8. Once the heating and melting is complete, the semiconductor mounting mechanism 17 supplies a solvent to the top surface of the workpiece W to remove the flux FS, as shown in FIG. 15. As an example of the solvent used to remove the flux FS, a glycol ether-based solvent is used. Once the flux FS is removed, the mounting process of the semiconductor element 7 is completed.

[0083] Step S4 (Plasma treatment) Once the semiconductor elements 7 are mounted on the workpiece W, the workpiece WF on which the semiconductor elements 7 are mounted is transported to a plasma processing device. Then, inside a plasma cleaning chamber provided in the plasma processing device, plasma discharge is performed on the upper surface of the workpiece W on which the semiconductor elements 7 are mounted. By performing plasma discharge treatment on the workpiece W, organic contaminants, flux residue, and the like are removed from the upper surface of the workpiece W.

[0084] Step S5 (sealing of semiconductor elements) After the plasma treatment, the process of sealing the semiconductor elements 7 mounted on the workpiece W begins. First, the holding table 55 arranged in the sealing mechanism 19 is raised, and the workpiece WF on which the semiconductor elements 7 are mounted is transferred from the loading table 45 to the holding table 55. At this time, the holding table 55 has been raised to a position higher than the upper surface of the lower mold 49, as shown in FIG.

[0085] After the workpiece WF on which the semiconductor element 7 is mounted is placed on the holding table 55, the control unit 43 operates the actuator 59 to lower the holding table 55. At this time, as shown in Fig. 17, the height of the holding table 55 is adjusted so that the upper surface of the holding film 3 and the upper surface of the lower mold 49 are flush with each other. In other words, the height of the holding table 55 is adjusted so that the lower surface of the workpiece W abuts on or is close to the upper surface of the lower mold 49.

[0086] After lowering the holding table 55 to adjust the height, the upper mold 47 is lowered as shown in Fig. 18. By lowering the upper mold 47, the portion of the workpiece W that protrudes outside the film laminate 5, i.e., the outer periphery WS of the workpiece W, is sandwiched between the upper mold 47 and the lower mold 49 to form the mold 50. In other words, the internal space of the mold 50 is divided into an upper space H1 on the upper mold 47 side and a lower space H2 on the lower mold 49 side, with the workpiece W as the boundary.

[0087] After the outer periphery WS of the workpiece W is sandwiched from above and below to form the mold 50, the control unit 43 operates the sealing material supply unit 53, which supplies the sealing material 9 into the interior of the mold 50 through a flow path 51 disposed in the upper mold 47, as shown in Fig. 19. Since the internal space of the mold 50 is divided by the workpiece W, the supplied sealing material 9 fills the upper space H1 in which the semiconductor element 7 is disposed.

[0088] Once the upper space H1 is filled with the sealing material 9, a heating mechanism (not shown) is activated to heat the sealing material 9. By heating the sealing material 9 that surrounds the semiconductor elements 7, each of the semiconductor elements 7 mounted on the workpiece W is sealed with the sealing material 9. That is, the solid sealing material 9 is heated and melted by heating, becoming highly fluid. The highly fluid sealing material 9 deforms to conform to the irregularities of the workpiece W on which the semiconductor elements 7 are mounted, and the sealing material 9 precisely seals the semiconductor elements 7. The sealing material 9, which is a thermosetting resin, is then hardened by further heating, and the sealing material 9 seals the semiconductor elements 7. By sealing the semiconductor elements 7, a semiconductor device 11 is formed on the film laminate 5, having a configuration in which the semiconductor elements 7 mounted on the workpiece W are sealed with the sealing material 9. The process of step S5 is completed by thermally hardening the sealing material 9 by heating for a predetermined period of time.

[0089] Step S6 (Separation of film laminate) After the semiconductor element 7 is encapsulated and the production of the semiconductor device 11 is completed, the process of separating the semiconductor device 11 from the film laminate 5 begins. First, as shown in Fig. 20, the upper mold 47 is raised to separate the upper mold 47 from the lower mold 49. By raising the upper mold 47, the upper mold 47 is separated from the workpiece W, and the layer of encapsulant 9 in the semiconductor device 11 is exposed to the outside.

[0090] After the upper mold 47 is raised, the semiconductor device 11 is transported using the device transport mechanism 61. The device transport mechanism 61 holds the semiconductor device 11 by suctioning the upper surface of the sealing material 9 through suction holes provided in the lower part of the device transport mechanism 61.

[0091] The suction force of the device transport mechanism 61 is adjusted in advance so that the holding force (suction force GS) of the device transport mechanism 61 on the semiconductor device 11 is greater than the holding force (suction force F) of the holding film 3 on the workpiece W. Therefore, when the device transport mechanism 61 rises while suction-holding the semiconductor device 11, the semiconductor device 11 is easily separated from the film stack 5 and rises together with the device transport mechanism 61. The semiconductor device 11 separated from the film stack 5 is stored in a semiconductor device storage unit (not shown).

[0092] If the heat curing of the sealing material 9 is insufficient by the heating in step S5, additional curing is performed. Additional curing is a process in which the semiconductor device 11 is reheated using an oven or the like to sufficiently heat cure the sealing material 9. The heating time in additional curing is preferably longer than the heating time in step S5, and a preferred example of the heating time is approximately 1 to 3 hours. Furthermore, the heating temperature in additional curing is preferably higher than the heating temperature in step S5.

[0093] The additional curing may be performed before or after the semiconductor device 11 is separated from the film laminate 5. In the former case, the semiconductor device 11 is formed on the film laminate 5 by heating, melting, and curing the sealing material 9, and then the semiconductor device 11 is reheated while it is placed on the film laminate 5, thereby sufficiently curing the sealing material 9 and completing the additional curing. After the additional curing is completed, the device transport mechanism 61 lifts up while suction-holding the upper surface of the sealing material 9, thereby separating the semiconductor device 11 from the film laminate 5.

[0094] In the latter case, after separating the semiconductor device 11 from the film laminate 5, the device transport mechanism 61 transports the semiconductor device 11 to a device for additional curing (for example, a heating oven). By heating the semiconductor device 11 in the oven, the sealing material 9 is sufficiently hardened and the additional curing is completed. The device transport mechanism 61 again holds the semiconductor device 11 that has been subjected to additional curing, and transports it to the semiconductor device storage section.

[0095] In particular, when additional curing is performed before the process of separating the film laminate 5 from the semiconductor device 11, the additional curing is performed while the workpiece W is held by the holding film 3, so warping of the workpiece W during the additional curing can be avoided. Therefore, the additional curing process can be completed with the workpiece W in a flat state without using any warping prevention mechanism other than the film laminate 5. Furthermore, since the workpiece W can maintain a high degree of flatness even when reheating for the additional curing is performed, it is possible to avoid transport errors caused by warping of the workpiece W when transporting the semiconductor device 11.

[0096] The semiconductor device 11 is produced through a series of steps from step S1 to step S6. Thereafter, the process branches depending on whether or not a predetermined number of semiconductor devices 11 have been produced. If the predetermined number of semiconductor devices 11 have been produced, the operation of the semiconductor device manufacturing apparatus is complete. On the other hand, if it is necessary to produce more semiconductor devices 11, the process proceeds to step S7.

[0097] Step S7 (Reuse of film laminate) When further manufacturing the semiconductor device 11, the film laminate 5 used in step S6 is transported from the sealing mechanism 19 to the work mounting mechanism 15. That is, as shown in Fig. 22, the film laminate 5 placed on the holding table 55 of the sealing mechanism 19 is transported by a transport mechanism (not shown) to the work mounting mechanism 15 and placed on the holding table 31 again.

[0098] After the film laminate 5 is placed on the holding table 31 again, steps S2 to S6 are performed again to produce another semiconductor device 11. Thereafter, steps S2 to S6 are repeated a specified number of times via step S7 to produce a predetermined number of semiconductor devices 11. That is, in the semiconductor device manufacturing process according to the present invention, the film laminate 5 formed when producing the first semiconductor device 11 can be reused when producing the second or subsequent semiconductor devices 11. In other words, the film laminate 5 used to produce the semiconductor device 11 can be reused in the next step S2.

[0099] <Effects of the configuration of the embodiment> 23(a), in a conventional manufacturing process for a semiconductor device, a workpiece W is placed on a support CA, for example a metal plate, and while the support CA supports the workpiece W from below, a semiconductor element SM having bumps BA is mounted on the workpiece W. The mounted semiconductor element SM is then sealed with a sealing resin to manufacture a semiconductor device.

[0100] However, such conventional manufacturing methods suffer from the problem of reduced precision of the semiconductor device due to deformation of the workpiece W. That is, the workpiece W may be deformed when heated during processes such as mounting the semiconductor element 7. Examples of deformations that may occur in the workpiece W include warping of the workpiece W or wavy deformation of the workpiece W as shown in FIG. 23(b). Deformation of the workpiece W causes a portion of the workpiece W to lift off the support CA, reducing the flatness of the workpiece W. As a result, poor contact occurs between the semiconductor element SM and the workpiece W, as indicated by the symbol MS. There is also concern that deformation of the workpiece W may cause a misalignment in the mounting position of the semiconductor element SM, as indicated by the symbol Lb.

[0101] Furthermore, in the conventional manufacturing process of a semiconductor device, there is a concern that the workpiece W may become misaligned. That is, as shown in Fig. 23(c), when the semiconductor element SM is mounted, the workpiece W slides against the support surface (top surface) of the support body CA, causing the workpiece W to shift horizontally. If the semiconductor element SM is mounted with the workpiece W in a misaligned state, the mounting position of the semiconductor element SM relative to the workpiece W will shift, resulting in a decrease in the precision of the semiconductor device.

[0102] A conventional configuration for preventing such deformation of the workpiece W is as shown in Patent Document 1. That is, as shown in Fig. 24, with the workpiece W placed on the support body CA, a weight member V is placed on the workpiece W outside the region R1 where the semiconductor element SM is to be mounted. In this case, the weight of the weight member V presses the workpiece W, which can provide a certain effect of preventing deformation of the workpiece W and causing a part of the workpiece W to lift up from the support body CA.

[0103] However, with such a conventional configuration, there is a concern that damage may occur to the workpiece W, and it is difficult to fully prevent deformation of the workpiece W. That is, to prevent deformation of the workpiece W, it is necessary to increase the pressing force (physical pressure) by the weight member V. As a result, the stress of the workpiece W cannot withstand the increasing pressing force of the weight member V, and damage such as cracks or distortion occurs in the workpiece W. Damage frequently occurs particularly at position R2 of the workpiece W where the weight member V is disposed.

[0104] Furthermore, in the configuration of Patent Document 1 and the like, the pressing force of the weight member V acts near the region R2, but the pressing force is less likely to act in positions far from the region R2. That is, the pressing force of the weight member V is less likely to act in the center of the region R1 where the semiconductor element SM is mounted, and the workpiece W may be elongated and deformed in the region R1 due to heating, etc. As a result, it is difficult to reliably prevent deformation of the workpiece W, for example, inside the region R1 where the semiconductor element SM is mounted.

[0105] In particular, in recent years, semiconductor devices have become thinner, and thinner workpieces W are being used. As the workpiece W becomes thinner, it becomes more susceptible to damage, and it becomes extremely difficult to prevent deformation of the workpiece W while avoiding damage to the workpiece W using conventional configurations. Furthermore, in recent years, there has been a strong trend toward using plastic substrates and the like as the workpiece W in order to reduce the cost of semiconductor devices. In other words, in recent years, there has been a strong trend toward using materials that are more susceptible to deformation upon heating as the workpiece W, and it has become difficult to reliably prevent deformation of the workpiece W using conventional configurations.

[0106] On the other hand, according to the device of the embodiment, a film laminate 5 in which a holding film 3 is laminated on a carrier 1 serving as a support is used to perform a step of mounting a semiconductor element 7 on a workpiece W (step S3) and a step of sealing the semiconductor element 7 with a sealing material 9 (step S5), thereby manufacturing a semiconductor device 11. That is, as a preliminary step to mounting the semiconductor element 7 on the workpiece W, the workpiece W is placed on the side of the holding film 3 of the film laminate 5 (step S2).

[0107] The holding film 3 holds the workpiece W, and the flatness of the workpiece W is ensured by placing the workpiece W on the holding film 3 side of the film laminate 5 and bringing it into close contact with the film laminate 5. In other words, when the workpiece W is heated in a process such as mounting a semiconductor element 7, the holding film 3 can prevent the workpiece W from deforming and causing a part of the workpiece W to lift up from the film laminate 5.

[0108] Furthermore, the holding film 3 contacts substantially the entire surface of the workpiece W. In other words, the holding film holds substantially the entire surface of the workpiece W. Therefore, the holding film 3 applies a force to maintain flatness to substantially the entire surface of the workpiece W, thereby more reliably preventing deformation of the workpiece W. In particular, the region R1 of the workpiece W where the semiconductor element 7 is to be mounted is reliably held in contact with the holding film 3 of the film laminate 5. Therefore, the effect of preventing deformation of the workpiece W is also achieved in the region R1 corresponding to the center of the workpiece W, so that poor mounting or misalignment of the semiconductor element 7 can be more reliably prevented.

[0109] In this embodiment, a holding force that prevents deformation of the workpiece W acts on the workpiece W by the simple operation of placing the workpiece W on the side of the holding film 3 of the film laminate 5. In other words, unlike the conventional configuration, the manufacturing process of the semiconductor device 11 according to this embodiment can significantly reduce the time required for the process of preventing deformation of the workpiece W. Therefore, it is possible to prevent deformation of the workpiece W while improving the manufacturing efficiency of the semiconductor device 11.

[0110] When a porous body containing silicone or a fluorine compound is used as the constituent material of the holding film 3, attaching the workpiece W to the holding film 3 generates a force that holds the workpiece W by adsorbing it on the porous surface of the holding film 3. That is, when the workpiece W is placed on the film laminate 5, an adsorption force F is generated in the direction from the workpiece W toward the holding film 3, as shown in FIG. 25 . The adsorption force F inhibits the workpiece W from deforming and causing a part of the workpiece W to lift up. Therefore, in each process of manufacturing the semiconductor device 11, the workpiece W can maintain a flat shape in close contact with the holding film 3, thereby improving the positional accuracy of the semiconductor element 7 and the connection accuracy of the semiconductor element 7 and the workpiece W.

[0111] Furthermore, in the conventional configurations disclosed in Patent Document 1 or Patent Document 2, which prevent warping of the workpiece W by pressing or pulling the outer periphery of the workpiece W, a relatively large physical pressure, such as pressing or pulling, is applied to a portion of the workpiece W. On the other hand, in the configuration of the present invention, warping of the workpiece W is prevented by applying a relatively small force, the suction force F of the holding film 3, to the entire workpiece W. Therefore, in the semiconductor device manufacturing method of the present invention, a situation in which the suction force F exceeds the stress of the workpiece W and the workpiece W is damaged can be more reliably avoided.

[0112] When a porous body is used as the constituent material of the holding film 3, the holding force of the holding film 3, based on the suction force F due to the porosity, is large enough to prevent deformation of the workpiece W. On the other hand, the suction force F of the holding film 3 is small compared to the suction force (suction force GS, as an example) in suction holding using a general vacuum suction device. Therefore, when transporting the produced semiconductor device 11, by holding the semiconductor device 11 by vacuum suction, the semiconductor device 11 can be easily separated from the film stack 5 against the suction force F. In other words, it is possible to reliably avoid damage to the workpiece W or the holding film 3 when separating the semiconductor device 11 from the film stack 5.

[0113] Furthermore, the holding force of a porous body that adsorbs a workpiece is weaker than the holding force achieved by adhering or adhering to the workpiece using an adhesive or pressure-sensitive adhesive. Therefore, by using a porous body as the constituent material of the holding film 3, it is possible to avoid situations where the holding force is too strong for the workpiece and the material of the holding film adheres as residue to the backside of the workpiece (so-called "glue residue").

[0114] Furthermore, in the film laminate 5, the support film 3 is formed on the carrier 1 as a solid film layer. Therefore, when the semiconductor device 11 is separated from the film laminate 5, it is possible to prevent a portion of the constituent material of the support film 3 from peeling off and adhering as residue to the workpiece W. Therefore, it is possible to reuse the film laminate 5 used in the first manufacturing process of the semiconductor device 11 in the second or subsequent manufacturing process of the semiconductor device 11. In other words, in the manufacturing process of the semiconductor device 11 from the second or subsequent manufacturing process, the process of generating the film laminate 5 in step S1 can be omitted, thereby shortening the time required for mass production of the semiconductor device 11 and significantly reducing costs. Furthermore, the amount of waste of the carrier 1 and the support film 3 can be reduced, thereby reducing the burden on the environment.

[0115] The process of adhering the workpiece W to the film laminate 5 is carried out under reduced pressure using the chamber 29. That is, the workpiece W is adhered to the film laminate 5 with the space between the holding film 3 and the workpiece W evacuated, so that it is possible to avoid a decrease in the holding force of the holding film 3 on the workpiece W due to air being trapped between the holding film 3 and the workpiece W.

[0116] In this embodiment, the film laminate 5 is configured to be smaller than the workpiece W in a plan view, and the workpiece W is placed on the film laminate 5 so that the outer periphery of the workpiece W protrudes outside the film laminate 5. In this case, when the semiconductor element 7 is sealed with the sealing material 9 in step S5, the outer periphery WS of the workpiece W protruding outside the film laminate 5 can be sandwiched from above and below by an upper mold 47 and a lower mold 49, etc., to seal the periphery of the semiconductor element 7. Therefore, the sealing material 9 can be filled around the semiconductor element 7 without applying pressure to the center of the semiconductor element 7 or the workpiece W. Therefore, when manufacturing the semiconductor device 11, damage to the semiconductor element 7 or the circuit on the workpiece W due to the action of pressure can be reliably avoided.

[0117] Furthermore, by gripping the outer periphery WS of the workpiece W, the semiconductor device 11 can be transported without applying pressure to the semiconductor element 7 or the circuitry on the workpiece W. This makes it possible to avoid damage to the semiconductor element 7 or the circuitry on the workpiece W when transporting the semiconductor device 11.

[0118] <Other embodiments> It should be noted that the embodiments disclosed herein are illustrative in all respects and are not limiting. The scope of the present invention is defined by the claims rather than the above description of the embodiments, and includes all modifications (variations) within the meaning and scope of the claims. For example, the present invention can be modified as follows:

[0119] (1) In step S2 of the embodiment, the film laminate 5 and the workpiece W are placed inside the chamber 29, and then the pressure inside the chamber 29 is reduced and the workpiece W is pressed against the film laminate 5 using the pressing member 35, thereby adhering the workpiece W to the holding film 3, but this is not limited to this.

[0120] A first modified example of the method for adhering the workpiece W to the holding film 3 is a configuration in which a differential pressure FA is generated inside the chamber 29, as shown below. In this first modified example, the workpiece W is attached and held at a predetermined pitch on a long conveying sheet T, as shown in FIG. 26(a). The conveying sheet T has a structure in which a non-adhesive base material and an adhesive material having adhesive properties are laminated. Examples of materials that make up the base material include polyolefin and polyethylene. Examples of materials that make up the adhesive material include acrylic ester copolymer.

[0121] The conveying sheet T is fed along a path extending in the x direction above the mounting position P2 in the work mounting mechanism 15. The conveying sheet T is fed by a feeding mechanism (not shown). The width of the conveying sheet T is set to be larger than the diameter of the lower housing 29A.

[0122] The first modified example differs from the embodiment in step S2 among the steps, so step S2 in the first modified example will be described with reference to FIGS.

[0123] In the first modified example, after the film laminate 5 is produced in step S1, the film laminate 5 is placed on the holding table 31 at the set position P1. Then, the lower housing 29A is moved together with the holding table 31 from the set position P1 to the mounting position P2. At the mounting position P2, as shown in Fig. 26(b), the conveying sheet T that holds the workpiece W is unwound in the x direction between the lower housing 29A and the upper housing 29B.

[0124] After the lower housing 29A moves to the mounting position P2, the conveying sheet T is unwound so that the workpiece W is positioned above the film laminate 5. Once the workpiece W is positioned above the film laminate 5, the upper housing 29B descends. As the upper housing 29B descends, the conveying sheet T is sandwiched between the upper housing 29B and the lower housing 29A, forming the chamber 29, as shown in FIG. 26(c). The internal space of the formed chamber 29 is divided into two spaces by the conveying sheet T. That is, it is divided into a lower space L1 on the lower housing 29A side and an upper space L2 on the upper housing 29B side, with the conveying sheet T sandwiched between them. The film laminate 5 located inside the lower housing 29A faces closely to the workpiece W with a predetermined clearance.

[0125] After forming the chamber 29, the upper space L2 and the lower space L1 are depressurized so that a pressure difference FA is generated between them. First, the control unit 43 operates the vacuum device 39 to reduce the air pressure in the lower space L1 and the air pressure in the upper space L2 to a predetermined value. An example of the predetermined value is 10 Pa to 100 Pa. At this time, the control unit 43 adjusts the aperture of an electromagnetic valve (not shown) disposed in a flow path connected to the lower housing 29A and an electromagnetic valve (not shown) disposed in a flow path connected to the upper housing 29B so that the pressure in the lower space L1 and the upper space L2 are reduced at the same speed.

[0126] When the air pressure in the lower space L1 and the upper space L2 is reduced to a predetermined value, the control unit 43 closes each electromagnetic valve and stops the operation of the vacuum device 39. The control unit 43 then adjusts the opening of each electromagnetic valve to allow leakage so that the air pressure in the upper space L2 is higher than the air pressure in the lower space L1. As the air pressure in the upper space L2 becomes higher than the air pressure in the lower space L1, a pressure difference FA is generated between the two spaces, as shown in Figure 27(a). As a result of the generation of the pressure difference FA, the workpiece W, together with the conveying sheet T, is pulled from the center toward the lower housing 29A, deforming into a convex shape.

[0127] Due to the deformation of the workpiece W caused by the differential pressure FA, the workpiece W comes into contact with the surface of the holding film 3 radially from the center toward the periphery inside the evacuated lower space L1, and the holding film 3 and the workpiece W are further adhered to each other. This contact and adhesion causes the workpiece W to be attached to the holding film 3 side of the film laminate 5, completing the process of step S2. The operations from step S3 onwards are the same as those in the embodiment, so a description thereof will be omitted.

[0128] In the first modified example, as in the embodiment, the process of attaching the workpiece W to the holding film 3 is performed under reduced pressure. This prevents air bubbles from being trapped between the holding film 3 and the workpiece W, which reduces the holding force of the holding film 3 on the workpiece W. In the first modified example, the workpiece W is pressed by a pressure difference, so the pressing member 35 and the cylinder 37 can be omitted from the chamber 29.

[0129] In this way, in the first modified example, a differential pressure FA is generated inside the chamber 29 under reduced pressure. The differential pressure FA presses the workpiece W, causing the workpiece W to adhere to the holding film 3, and the holding film 3 is placed in a mounted state where it holds the workpiece W by suction.

[0130] A second modified example of the method for adhering the workpiece W to the holding film 3 uses a pressing member 35A to press the conveying sheet T and the workpiece W. In the second modified example, as shown in FIG. 28, a pressing member 35A is provided in place of the pressing member 35 in the upper housing 29B. While the pressing member 35 provided in the embodiment has a flat lower surface, the pressing member 35A provided in the second modified example is configured so that the lower surface is hemispherical or dome-shaped. The pressing member 35A is configured to be movable up and down within the chamber 29 by the operation of a cylinder 37.

[0131] In the second modified example, similar to the first modified example, the workpiece W is held on a long conveying sheet T. Then, in step S2, the upper housing 29A and the lower housing 29B sandwich the conveying sheet T to form a chamber 29. Note that, unlike the first modified example, the second modified example does not require the generation of a pressure difference, and therefore the width of the conveying sheet T may be smaller than the diameter of the lower housing 29A. In other words, in the second modified example, the internal space of the chamber 29 does not need to be divided by the conveying sheet T.

[0132] Here, the operation of step S2 in the second modified example will be described. In the second modified example, after the film laminate 5 is produced in step S1, the film laminate 5 is placed on the holding table 31 at the set position P1. Then, the lower housing 29A is moved together with the holding table 31 from the set position P1 to the mounting position P2. At the mounting position P2, as in the first modified example, the conveying sheet T that holds the workpiece W is unwound in the x direction between the lower housing 29A and the upper housing 29B.

[0133] After the lower housing 29A moves to the mounting position P2, the conveying sheet T is appropriately unwound to position the workpiece W above the film laminate 5, and then the upper housing 29B is lowered. As the upper housing 29B lowers, the conveying sheet T is sandwiched between the upper housing 29B and the lower housing 29A, and the chamber 29 is formed.

[0134] After sandwiching the conveying sheet T to form the chamber 29, the control unit 43 activates the vacuum device 39 to reduce the pressure inside the chamber 29. After the pressure inside the chamber 29 has been reduced, the cylinder 37 is activated to lower the pressing member 35A. By being pressed against the underside of the hemispherical or dome-shaped pressing member 35A, the workpiece W, together with the conveying sheet T, is deformed into a convex shape from the center, as shown in FIG.

[0135] As the workpiece W is pressed by the descending pressing member 35A and deformed into a convex shape, the workpiece W comes into contact with the surface of the holding film 3 radially from the center toward the periphery inside the chamber 29, and the holding film 3 and the workpiece W are further adhered to each other. Through this contact and adhesion, the workpiece W is attached to the holding film 3 side of the film laminate 5, and the process of step S2 is completed. The operations from step S3 onwards are the same as those in the embodiment and other modified examples, so a description thereof will be omitted.

[0136] In this way, in the second modified example, the workpiece W is pressed by the hemispherical pressing member 35A under reduced pressure, so that the workpiece W is adhered to the holding film 3, and the holding film 3 is placed in an attached state in which it holds the workpiece W by suction.

[0137] A third modified example of the method for adhering the workpiece W to the holding film 3 is shown in Fig. 30. In the third modified example, a pressure roller 65 is disposed inside the chamber 29. The pressure roller 65 presses the workpiece W against the film laminate 5, and is configured so that it can move up and down and roll in the horizontal direction by a drive unit (not shown). Note that in the third modified example, as in the embodiment, no conveying sheet T is used.

[0138] Here, the operation of step S2 in the third modified example will be described. In the second modified example, after the film laminate 5 is created in step S1, the film laminate 5 is placed on the holding table 31 at the set position P1. Then, as in the embodiment, the workpiece W is placed on the film laminate 5 at the set position P1. Thereafter, the lower housing 29A is moved together with the holding table 31 from the set position P1 to the mounting position P2, and the upper housing 29A is lowered to form the chamber 29.

[0139] After forming the chamber 29, the control unit 43 activates the vacuum device 39 to reduce the pressure inside the chamber 29. Once the inside of the chamber 29 is reduced in pressure, the control unit 43 activates the drive unit to appropriately adjust the height of the pressure roller 65 and roll the pressure roller 65 in the horizontal direction. That is, the pressure roller 65 rolls over the workpiece W placed on the film laminate 5, pressing the workpiece W toward the film laminate 5.

[0140] The workpiece W is pressed by the pressure roller 65, so that the workpiece W and the holding film 3 come into close contact with each other and the workpiece W is attached to the film laminate 5. The process of step S2 is completed when the workpiece W is attached to the holding film 3 side of the film laminate 5. The operations from step S3 onwards are the same as those in the embodiment and other modified examples, so a description thereof will be omitted.

[0141] In this way, in the third modified example, the workpiece W is pressed by the rolling of the pressure roller 65 under reduced pressure, so that the workpiece W is adhered to the holding film 3, and the holding film 3 is placed in an attached state in which it adsorbs and holds the workpiece W.

[0142] (2) In the embodiment, in step S2, the chamber 29 is formed with the workpiece W placed on the film laminate 5, and the internal space of the chamber 29 is further depressurized. However, this is not limited to this. That is, in step S2 according to the embodiment or each modified example, the chamber 29 may be formed and the internal space of the chamber 29 may be depressurized in a state where a gap HP is formed between the film laminate 5 and the workpiece W using a predetermined spacing member.

[0143] A modified example in which the pressure inside the chamber 29 is reduced while a gap HP is formed will be described with reference to Figures 31 and 32. In this modified example, as shown in Figure 31, support pins 65 are arranged inside the holding table 31. In a plan view, the support pins 65 are arranged so as to surround the film laminate 5 placed on the holding table 31. The support pins 65 correspond to the spacing member in this invention.

[0144] The support pins 65 are configured to be able to move up and down on the holding surface of the holding table 31 by an actuator such as a cylinder (not shown). The positions of the support pins 65 are adjusted so that the support pins 65 protruding from the holding table 31 can support the workpiece W from below. That is, in the modified example according to (2), the diameter of the workpiece W is configured to be larger than the diameter of the carrier 1.

[0145] In the modified example according to (2), as in the other modified examples, the process in step S2 among the steps differs from that in the embodiment. Therefore, step S2 in the modified example according to (2) will be described.

[0146] After the film laminate 5 is produced by the process of step S1, the film laminate 5 is placed on the holding table 31 at the set position P1, and further, the workpiece W is placed on the film laminate 5 using the workpiece transport mechanism 27. Thereafter, the lower housing 29A is moved together with the holding table 31 from the set position P1 to the mounting position P2.

[0147] After the lower housing 29A moves to the mounting position P2, the upper housing 29B is lowered to join the joints 33 and 34, thereby forming the chamber 29. After the chamber 29 is formed, the support pins 65 are protruded from the holding table 31. As shown in FIG. 31 , each of the support pins 65 protruding from the holding table 31 pushes up the workpiece W placed on the film stack 5 from below. As the support pins 65 push up the workpiece W, a gap HP is formed between the workpiece W and the holding film 3.

[0148] After the gap HP is formed, the control unit 43 activates the vacuum device 39 to reduce the pressure inside the chamber 29. By reducing the pressure inside the chamber 29, the air present in the gap HP between the workpiece W and the holding film 3 is evacuated to the outside of the chamber 29.

[0149] After the pressure inside the chamber 29 is reduced, the control unit 43 lowers the support pins 65. As shown in Fig. 32, the support pins 65 are lowered, and the workpiece W is placed again on the film laminate 5. At this time, the workpiece W is placed on the film laminate 5 in a state where the air in the gap HP has been degassed in advance, so that it is possible to reliably prevent air from being drawn in between the workpiece W and the film laminate 5, which are in contact with each other.

[0150] After placing the workpiece W again on the film laminate 5 in a decompressed state, the control unit 43 activates the cylinder 37 to lower the pressing member 35. As the pressing member 35 lowers, the workpiece W is pressed against the film laminate 5 supported by the holding table 31. As the workpiece W is pressed against the film laminate 5, the workpiece W and the holding film 3 come into close contact with each other, and the workpiece W is attached to the film laminate 5.

[0151] In this manner, in this modified example, the workpiece W and the film laminate 5 are separated using support pins 65 or the like, and the internal space of the chamber 29 housing the workpiece W and the film laminate 5 is depressurized with a gap HP formed between the workpiece W and the film laminate 5. When the interior of the chamber 29 is depressurized with the workpiece W and the film laminate 5 in contact, it is conceivable that part of the gap between the workpiece W and the film laminate 5 will be covered by the workpiece W and the film laminate 5, creating an airtight state.

[0152] In this case, some of the sealed gaps are not sufficiently evacuated, and air becomes entrained between the workpiece W and the film laminate 5. If the workpiece W is pressed toward the film laminate 5 using a pressing member 35 or the like while air is entrained between the workpiece W and the film laminate 5, there is a concern that the entrained air may reduce the adhesion between the workpiece W and the holding film 3. In this modified example, the pressure is reduced with the gap HP reliably formed between the workpiece W and the film laminate 5, so it is possible to reliably prevent air from being entrained between the workpiece W and the film laminate 5 when the workpiece W is pressed against the film laminate 5. Therefore, the adhesion between the workpiece W and the holding film 3 can be improved in the work mounting body WF.

[0153] In the modified example according to (2), the timing at which the support pins 65 are extended to form the gap HP may be changed as appropriate, as long as it occurs before the pressure inside the chamber 29 is reduced. As an example, the support pins 65 may be extended after the film laminate 5 is placed on the holding table 31, and the workpiece W may be transferred by the workpiece transport mechanism 27 to the support pins 65 above the film laminate 5. In this case, the gap HP is formed between the workpiece W and the film laminate 5 at the set position P1. Thereafter, the lower housing 29A is moved to the mounting position P2 while maintaining the gap HP formed, and the upper housing 29B is further lowered to form the chamber 29, after which the pressure inside the chamber 29 is reduced.

[0154] In the modified example according to (2), the spacing member that separates the workpiece W from the film laminate 5 is not limited to the support pin 65. As an example, it may be a gripping mechanism that grips the workpiece W and makes it stand by above the film laminate 5. Another example of the spacing member is a suction holding mechanism that holds the workpiece W by suction and makes it stand by above the film laminate 5.

[0155] (3) In step S6 in the embodiment and each modified example, the mold 50 is removed from the semiconductor device 11, and then the semiconductor device 11 is removed from the film laminate 5. However, the timing of removing the mold 50 from the semiconductor device 11 and the timing of removing the semiconductor device 11 from the film laminate 5 may be simultaneous. As an example, the upper mold 47 may be removed from the semiconductor device 11, and at the same time, the device transport device 61 may suction-hold and raise the layer of encapsulant 9 to remove the semiconductor device 11 from the film laminate 5. Furthermore, the holding table 55 holding the film laminate 5 may be lowered to separate the film laminate 5 from the semiconductor device 11, and at the same time, the upper mold 47 may be removed from the semiconductor device 11. Note that if the encapsulant 9 is not sufficiently thermally cured, it is preferable to perform additional curing on the semiconductor device 11 after separating the film laminate 5 from the semiconductor device 11.

[0156] (4) In the embodiment and each modification, a step of treating the workpiece with plasma discharge may be performed between step S2 and step S3. Treatment of the workpiece with plasma discharge can be performed using a known plasma cleaning device. By performing plasma treatment as a preliminary step to the step of mounting the semiconductor element 7 on the workpiece W in step S3, the metal surfaces of the substrate pads exposed on the surface of the workpiece W can be cleaned to remove organic contaminants.

[0157] (5) In the embodiment and each modified example, a step of performing underfilling may be performed between step S4 and step S5. That is, by performing underfilling after mounting the semiconductor element 7 on the workpiece W and performing plasma processing, the periphery of the bumps 8 in particular is sealed with epoxy resin or the like. This underfilling allows the semiconductor element 7 to be sealed more accurately in step S5.

[0158] (6) In step S1 according to the embodiment and each modification, a primer liquid may be applied to the carrier 1 as needed. That is, after the primer liquid is applied to the carrier 1, the film material of the support film 3 is further applied and dried. The primer liquid is not particularly limited, but examples of the primer liquid include acrylic resin, urethane resin, epoxy resin, and silicone resin. [Explanation of symbols]

[0159] 1 … Career 3... Holding film 5...Film laminate 7...Semiconductor element 8... Bump 9... Encapsulating material 11... Semiconductor device 13...Film lamination mechanism 15...Workpiece mounting mechanism 17...Semiconductor Mounting Organization 19 … Sealing mechanism 21 ... Loading table 23 ... Coating material 25 … Work supply section 27... Work transport mechanism 29...Chamba 30... rail 31... Holding table 35 ... Pressing member 37... Cylinder 39 … Vacuum equipment 40...Solenoid valve 41...Solenoid valve 43 ... Control section 47 ... Upper mold 49 ... Upper mold 50... Mold 53 … Sealing material supply section 55... Holding table 59... Actuator 61 ... Device transport mechanism W... Work HP … Gap

Claims

1. A method for manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, comprising: a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; Equipped with The support film is made of a porous material.

10. A method for manufacturing a semiconductor device comprising the steps of:

2. A method for manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, comprising: a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; Equipped with The film laminate after the workpiece and the semiconductor element are removed in the removing process is reused in the next workpiece mounting process.

10. A method for manufacturing a semiconductor device comprising the steps of:

3. A method for manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, comprising: a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; Equipped with The film laminate is configured to be smaller than the workpiece in a plan view, In the workpiece placing step, the workpiece is placed on the film laminate so that the outer periphery of the workpiece protrudes outward from the film laminate.

10. A method for manufacturing a semiconductor device comprising the steps of:

4. A method for manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is sealed with a sealing resin, comprising: a workpiece placing step of placing the workpiece on the side of a holding film of a film laminate in which a holding film for holding the workpiece is laminated on a support; an element mounting step of mounting the semiconductor element on the workpiece placed on the film laminate; a sealing step of sealing the semiconductor element mounted on the workpiece with the sealing resin; a detachment step of detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate; Equipped with The workpiece placing process includes: a placement step of placing the workpiece and the film stack in an internal space of a chamber having an upper housing and a lower housing; a decompression step of decompressing the internal space of the chamber; a pressurizing step of pressing the workpiece against the film laminate while the internal space of the chamber is decompressed; a separating step of separating the workpiece and the film stack disposed in the internal space of the chamber to form a gap between the workpiece and the film stack; Equipped with The decompression process includes: The internal space of the chamber is depressurized while the gap is formed between the workpiece and the film stack during the separating process.

10. A method for manufacturing a semiconductor device comprising the steps of:

5. 5. The method for manufacturing a semiconductor device according to claim 1, The support film is made of a porous material containing silicone or a fluorine compound.

10. A method for manufacturing a semiconductor device comprising the steps of:

6. 6. The method for manufacturing a semiconductor device according to claim 1, The sealing process includes: a resin filling process in which the semiconductor element mounted on the workpiece is placed in an internal space of a sealing mold comprising an upper mold and a lower mold, and the internal space is filled with the sealing resin in a molten state; a resin curing step of curing the filled sealing resin to seal the semiconductor element with the sealing resin; Equipped with The withdrawal process is The workpiece and the semiconductor element sealed with the sealing resin are removed from the film laminate, and the upper mold is removed from the workpiece.

10. A method for manufacturing a semiconductor device comprising the steps of:

7. 6. The method for manufacturing a semiconductor device according to claim 1, The sealing process includes: a resin filling process in which the semiconductor element mounted on the workpiece is placed in an internal space of a sealing mold comprising an upper mold and a lower mold, and the internal space is filled with the sealing resin in a molten state; a resin curing step of curing the filled sealing resin to seal the semiconductor element with the sealing resin; Equipped with The withdrawal process is a die detachment process of detaching the upper die from the workpiece; a laminate removing step of removing the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate after the mold removing step; 1. A method for manufacturing a semiconductor device, comprising:

8. 6. The method for manufacturing a semiconductor device according to claim 1, The sealing process includes: a resin filling process in which the semiconductor element mounted on the workpiece is placed in an internal space of a sealing mold comprising an upper mold and a lower mold, and the internal space is filled with the sealing resin in a molten state; a resin curing step of curing the filled sealing resin to seal the semiconductor element with the sealing resin; Equipped with The withdrawal process is a die detachment process of detaching the upper die from the workpiece; an additional curing step of curing the encapsulating resin by heating the workpiece and the semiconductor element encapsulated with the encapsulating resin while the workpiece is placed on the film laminate after the mold detaching step; a laminate detachment process for detaching the workpiece and the semiconductor element encapsulated with the encapsulating resin from the film laminate after the additional curing process; 1. A method for manufacturing a semiconductor device, comprising:

9. A workpiece integration device that integrates a workpiece and a film laminate in which a holding film that fixes and holds the workpiece is laminated on a support, a chamber having an upper housing and a lower housing; a placement mechanism that places the workpiece and the film stack in the internal space of the chamber; a decompression mechanism for decompressing the internal space of the chamber; a pressurizing mechanism that presses the workpiece against the film laminate while the internal space of the chamber is decompressed; Equipped with The support film is made of a porous material. A workpiece integration device characterized by:

10. A workpiece integration device that integrates a workpiece and a film laminate in which a holding film that fixes and holds the workpiece is laminated on a support, a chamber having an upper housing and a lower housing; a placement mechanism that places the workpiece and the film stack in the internal space of the chamber; a decompression mechanism for decompressing the internal space of the chamber; a pressurizing mechanism that presses the workpiece against the film laminate while the internal space of the chamber is decompressed; a separation mechanism that separates the workpiece and the film stack disposed in the internal space of the chamber to form a gap between the workpiece and the film stack; Equipped with The pressure reducing mechanism is The internal space of the chamber is depressurized while the gap is formed between the workpiece and the film stack by the separating mechanism. A workpiece integration device characterized by:

Images