Dielectric, device including same, and method for producing said dielectric

Abstract

To provide a dielectric material, a device comprising the same, and a method of preparing the dielectric material.SOLUTION: A dielectric material includes a layered perovskite compound, where the layered perovskite compound includes at least one selected from a Dion-Jacopson phase, an Aurivillius phase and a Ruddlesden-Popper phase, where the change (TCC) of a capacitance at 200°C with respect to a capacitance at 40°C is in the range from -15% to 15%, and the permittivity is 200 or more in the range from 1 kHz to 1 MHz. Also provided are a device comprising the same, and a method of preparing the dielectric material.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a dielectric, a device including the same, and a method for making the dielectric. [Background technology]

[0002] BACKGROUND ART As electronic products continue to be required to be smaller, thinner, and have higher capacitance, there is a demand for capacitors that are smaller, thinner, and have higher capacitance than existing capacitors.

[0003] In order to realize capacitors that are smaller, thinner, and have higher capacitance, dielectrics that provide improved dielectric properties are required.

[0004] However, when manufacturing a multi-layered ceramic capacitor (MLCC), which is a type of capacitor that has been made smaller, thinner, and has a higher capacitance, reduction sintering is required to prevent oxidation of the internal electrodes during the firing process of the internal electrodes and the dielectric composition.

[0005] During such a reduction sintering process, structural defects of the dielectric occur, which deteriorates the physical properties of the manufactured dielectric. Therefore, there is a need for a dielectric and a capacitor including the same that have improved structural stability and physical properties by preventing the deterioration of the dielectric during the sintering process. Summary of the Invention [Problem to be solved by the invention]

[0006] The problem to be solved by the present invention is to provide a dielectric having improved structural stability and physical properties.

[0007] Another object of the present invention is to provide a device including the dielectric.

[0008] Another problem to be solved by the present invention is to provide a method for producing the dielectric. [Means for solving the problem]

[0009] From one aspect, layered perovskite compounds, The layered perovskite compound includes one or more selected from a Dion-Jacopson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, The change in capacitance at 200°C (TCC: temperature coefficient of capacitance) relative to the capacitance at 40°C is -15% to 15%; A dielectric is provided having a dielectric constant of 200 or greater at 1 kHz to 1 MHz.

[0010] In another aspect, A plurality of electrodes; and the dielectric disposed between the plurality of electrodes.

[0011] In yet another aspect, preparing a mixture of a layered perovskite compound including one or more selected from the group consisting of a Dion-Jacopson phase, an Aurivillius phase, and a Ruddlesden-Popper phase and a metal salt; heat-treating the mixture in a reducing atmosphere; The method for producing the dielectric material, wherein the metal salt is represented by the following formula 8, is provided: [8] M a X b In the above Chemical Formula 8, M is a Group 1, 2 or 3 element of the Periodic Table of the Elements; X is a monovalent anion, a divalent anion, or a trivalent anion, and is an element other than a halogen; 1≦a≦3 and 1≦b≦4. [Effects of the Invention]

[0012] The present invention provides devices with improved dielectric properties by including dielectric materials with improved structural stability and physical properties. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a schematic diagram of a multilayer ceramic capacitor (MLCC) according to an illustrative embodiment. [Figure 2] 1 is a schematic diagram of a metal-insulator-metal (MIM) capacitor structure according to an illustrative embodiment. [Figure 3] 1 is a schematic diagram of a trench capacitor type dynamic random access memory (DRAM) structure according to an exemplary embodiment. [Figure 4A] 1 shows XRD (X-ray diffraction) spectra of the layered perovskite compound prepared in Example 1, the dielectric prepared in Example 1, and the dielectric prepared in Comparative Example 1. [Figure 4B] 1 shows XRD spectra of the layered perovskite compound prepared in Example 2, the dielectric prepared in Example 2, and the dielectric prepared in Comparative Example 2. [Figure 4C] 1 shows XRD spectra of the layered perovskite compound prepared in Example 3, the dielectric prepared in Example 3, and the dielectric prepared in Comparative Example 3. [Figure 4D] 1 shows XRD spectra of the layered perovskite compound prepared in Comparative Example 4 and the dielectric prepared in Comparative Example 4. [Figure 5] 1 shows Raman spectra of the layered perovskite compound prepared in Example 1, the dielectric prepared in Example 1, and the dielectric prepared in Comparative Example 1. [Figure 6] 1 is a graph showing the results of evaluation of temperature coefficient of dielectric constant (TCC) for the dielectrics manufactured in Example 1 and Comparative Example 1. DETAILED DESCRIPTION OF THE INVENTION

[0014] Various embodiments are illustrated in the accompanying drawings. However, the present invention may be embodied in many other forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. Like reference numerals refer to like elements throughout.

[0015] When an element is referred to as being "on" another element, it will be understood that it may be directly on top of the other element, or that there may be other elements intervening. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0016] Terms such as "first," "second," and "third" are used herein to describe various components, components, regions, layers, and / or sections, but these components, components, regions, layers, and / or sections are not limited by these terms. These terms are used only to distinguish one component, component, region, layer, or section from another component, component, region, layer, or section. Thus, a first component, component, region, layer, or section described below may also be referred to as a second component, component, region, layer, or section without departing from the teachings of this specification.

[0017] The terms used in this specification are for the purpose of describing particular embodiments only and do not limit the present invention. As used in this specification, the singular forms "a," "an," "the ...

[0018] Spatially relative terms, such as "below," "lower," "bottom," "top," "upper," and "top" may be used herein to easily describe the relationship of one component or feature to another. It is understood that spatially relative terms, when used or operated in addition to the orientation depicted in the figures, are intended to encompass different orientations of the device. For example, if the device in the figures were turned upside down, a component described as "below" or "below" another component or feature would be oriented "above" or "above" that other component or feature. Thus, the exemplary terms "below" and "bottom" can encompass both an up-down orientation. The device may also be oriented in other orientations (such as rotated 90 degrees or rotated in other directions), and the spatially relative terms used herein should be interpreted accordingly.

[0019] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that commonly used and dictionary-defined terms should be interpreted to have a meaning consistent with their meaning in the relevant art and within the context of this disclosure, and should not be interpreted in an idealized or overly formal way.

[0020] Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. As such, variations from the shapes of the illustrations are to be expected as a result, for example, of manufacturing techniques and / or tolerances. Thus, the embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein, but are to include deviations in shape that result, for example, from manufacturing. For example, a region illustrated or described as flat may typically have roughened and / or non-linear characteristics. Additionally, corners illustrated as sharp may be rounded. Accordingly, regions illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions or to limit the scope of the claims.

[0021] "Group" means a group in the Periodic Table of the Elements according to the International Union of Pure and Applied Chemistry ("IUPAC") Groups 1-18 classification system.

[0022] While particular embodiments have been described, presently unforeseen or unforeseeable alternatives, modifications, variations, improvements, and substantial equivalents may occur to applicant or those skilled in the art. Accordingly, the appended claims, as filed and as they may be amended, are intended to include all such alternatives, modifications, variations, improvements, and substantial equivalents.

[0023] Dielectrics, devices including the same, and methods for manufacturing the dielectrics according to one or more exemplary embodiments will be described in further detail below.

[0024] A dielectric according to one embodiment includes a layered perovskite compound, the layered perovskite compound including one or more selected from the group consisting of a Dion-Jacopson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) change at 200°C relative to the capacitance at 40°C of -15% to 15%, and a dielectric constant of 200 or more at 1 kHz to 1 MHz. The TCC change at 200°C relative to the capacitance at 40°C corresponds to the change in the dielectric constant at 200°C relative to the dielectric constant at 40°C, in other words, corresponds to the high temperature characteristic of the dielectric constant. The dielectric has a capacitance change at 200°C (TCC) of -15% to 15% relative to the capacitance at 40°C and a dielectric constant of 200 or more at 1 kHz to 1 MHz, so that the dielectric properties of a capacitor containing such a dielectric are improved, making it easier to reduce the size, thickness, and capacitance.

[0025] Capacitors with such reduced capacitance change at high temperatures can also be obtained by including a dielectric with excellent dielectric constant characteristics (i.e., excellent dielectric constant over a wide thermal range) in the capacitor. Dielectrics with excellent dielectric constant characteristics can also be obtained by preventing oxygen defects, such as oxygen vacancies, in layered perovskite compounds that occur during the reduction sintering process used to form the dielectric, and by preventing the volatilization of volatile metals. Such dielectrics can be obtained, for example, by adding a metal salt during the reduction sintering process, which will be described in the dielectric manufacturing method section below, thereby solving the aforementioned problems.

[0026] The change in capacitance (TCC) at 200°C relative to the capacitance at 40°C is, for example, -12% to 12%, -10% to 10%, -8% to 8%, or -5% to 5%. The rate of change in capacitance of the dielectric (or the rate of change in dielectric constant of the dielectric) can also be calculated from Equation 1 in Evaluation Example 3. The dielectric constant of the dielectric at room temperature (25°C) and 1 kHz to 1 MHz is, for example, 250 or more, 300 or more, 400 or more, 500 or more, 600 or more, 700 or more, 800 or more, 900 or more, 1,000 or more, or 1,500 or more. The dielectric constant of the dielectric at room temperature (25°C) from 1 kHz to 1 MHz is, for example, 100,000 or less, 50,000 or less, 40,000 or less, 30,000 or less, 20,000 or less, 10,000 or less, 9,000 or less, 8,000 or less, 7,000 or less, 6,000 or less, 5,000 or less, 4,000 or less, or 3,000 or less.

[0027] In the dielectric, the layered perovskite compound containing the Dion-Jacopson phase can also be represented by, for example, the following chemical formula 1: [C1] AB2C n-3 D n O 3n+1 In the above Chemical Formula 1, A is a monovalent element, B is a divalent element, C is a monovalent element, D is a pentavalent element, n is a number from 3 to 6.

[0028] In Chemical Formula 1, A can be, for example, Na, K, Rb, or a combination thereof. In Chemical Formula 1, C can be, for example, Na, K, Rb, or a combination thereof. In Chemical Formula 1, A and C can be the same or different.

[0029] In Formula 1, B can be, for example, Ca, Sr, Ba, or a combination thereof. In Formula 1, D can be, for example, Nb, V, Ta, or a combination thereof.

[0030] In the dielectric, the layered perovskite compound containing the Dion-Jacopson phase can also be represented by, for example, the following chemical formula 2: [Case 2] ACa2C n-3 Nb n O 3n+1 In the above Chemical Formula 1, A is Na, K, Rb or a combination thereof; C is Na, K, Rb or a combination thereof; n is a number from 3 to 6.

[0031] In the dielectric, the layered perovskite compound containing the Dion-Jacopson phase is, for example, KCa2Nb3O 10 , KCa2NaNb4O 13 , KCa2Na2Nb5O 16 , KCa2Na3Nb6O 19 , KCa2KNb4O 13 , KCa2K2Nb5O 16 , KCa2K3Nb6O 19 , KCa2RbNb4O 13 , KCa2Rb2Nb5O 16 , KCa2Rb3Nb6O 19 , NaCa2Nb3O 10 , NaCa2KNb4O 13 , NaCa2K2Nb5O 16 , NaCa2K3Nb6O 19 , NaCa2NaNb4O 13 , NaCa2Na2Nb5O 16 , NaCa2Na3Nb6O 19 , NaCa2RbNb4O 13 , NaCa2Rb2Nb5O 16 , NaCa2Rb3Nb6O 19 , RbCa2Nb3O 10 , RbCa2KNb4O 13 , RbCa2K2Nb5O 16 , RbCa2K3Nb6O 19 , RbCa2RbNb4O 13 , RbCa2Rb2Nb5O16 , RbCa2Rb3Nb6O 19 , RbCa2NaNb4O 13 , RbCa2Na2Nb5O 16 , RbCa2Na3Nb6O 19 , or a combination thereof.

[0032] The dielectric may be a sintered product of a layered perovskite compound containing one or more selected from the Dion-Jacopson phase, the Aurivillius phase, and the Ruddlesden-Popper phase. Such a sintered product may be the result of sintering in a reducing atmosphere. The reducing atmosphere may be an atmosphere containing a reducing gas such as hydrogen (H) and / or a hydrogen-rich gas (e.g., hydrogen, ammonium, methane, etc.). The grain size of the layered perovskite compound contained in such a sintered product may be 0.01 to 10 μm, 0.01 to 5 μm, 0.01 to 3 μm, 0.01 to 2 μm, 0.01 to 1 μm, 0.01 to 0.5 μm, 0.01 to 0.3 μm, 0.01 to 0.2 μm, or 0.01 to 0.1 μm. The grain width of the layered perovskite compound may be larger than the grain thickness. The grain thickness is, for example, the length of a grain perpendicular to the major plane of the layer in a layered perovskite compound. The ratio of thickness to width of a layered perovskite compound particle can be 10 or more, 100 or more, 1,000 or more, or even 10,000 or more. Such a high aspect ratio of the layered perovskite compound particle can provide an improved dielectric constant and enable thin film formation. The grain size can be confirmed, for example, from a scanning electron microscope (SEM) image or a transmission electron microscope (TEM) image. The grain size is, for example, the length of the major axis of the particle. The grain size is, for example, the size of the layered perovskite compound crystal grains contained in such a sintered product.

[0033] In the Raman spectrum of dielectrics, 200 cm -1 or 300cm -1and the position of the peak at 200 cm in the Raman spectrum of the unsintered layered perovskite compound used in the production of dielectrics. -1 or 300cm -1 The difference between the peak position shown by -1 Below, 4cm -1 Below, 3cm -1 Less than or equal to 2cm -1 Therefore, the dielectric can provide structural stability and physical properties similar to those of unsintered layered perovskite compounds despite the sintering process in a reducing atmosphere.

[0034] In the dielectric, the layered perovskite compound containing the Aurivillius phase is also represented by the following chemical formula 3: [C3] (Bi2O2)(A' n-1 B' n O 3n+1 ) In the above Chemical Formula 3, A' is a monovalent, divalent or trivalent element; B' is a trivalent, pentavalent or hexavalent element; n is a number from 3 to 6.

[0035] In Formula 3, for example, A' can be Na, K, Rb, Ca, Sr, or a combination thereof.

[0036] In Formula 3, for example, B' can be Sc, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, A, Ga, In, Tl, or a combination thereof. In Formula 3, for example, B' can be Nb, V, Ta, or a combination thereof.

[0037] In the dielectric, the layered perovskite compound containing the Aurivillius phase is, for example, Bi4Ti3O 12 , (Bi2O2)(Na 0.5 La 0.5 )Nb1.5 W 0.5 O7, (Bi2O2)(Sr(Nb 0.2 Ta 0.8 )2O7) etc.

[0038] In the dielectric, the layered perovskite compound containing the Ruddlesden-Popper phase is also represented by the following chemical formula 4: [C4] A” n”-1 B”2C” n” O 3n”+1 In the above Chemical Formula 4, A" is a monovalent, divalent or trivalent element, B" is a monovalent, divalent or trivalent element, C" is a trivalent, tetravalent, pentavalent or hexavalent element, n" is a number from 1 to 6.

[0039] In Formula 4, for example, A" can be Na, K, Rb, Ca, Sr, Ba, a lanthanum group element, or a combination thereof. In Formula 4, A" and B" can be the same or different from each other.

[0040] In Formula 4, for example, B″ can be Na, K, Rb, Ca, Sr, Ba, a lanthanum group element, or a combination thereof.

[0041] In Formula 4, for example, C" can be Sc, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, A, Ga, In, Tl, or a combination thereof. In Formula 4, for example, C" can be Nb, V, Ta, or a combination thereof.

[0042] In the dielectric, the layered perovskite compound containing the Ruddlesden-Popper phase is, for example, Sr2VO4, Sr3Ru2O7, Sr4Ti3O 10 , K2Nd2Ti3O 10 And so on.

[0043] The dielectric may contain a solid solution of a layered perovskite compound and a metal salt. The dielectric can form a solid solution with, for example, oxygen vacancies generated during the reduction firing process of the layered perovskite compound and a metal salt added to prevent the volatilization of an alkali metal. The metal salt is melted at the reduction firing temperature of the layered perovskite compound to form a molten salt, and such a molten salt can be mixed with the layered perovskite compound to form a solid solution of the metal salt and the layered perovskite compound. The solid solution of the metal salt and the layered perovskite compound is also disposed, for example, at grain boundaries between the layered perovskite compound crystal grains included in the sintered body. Therefore, a dielectric containing a solid solution of a metal salt and a layered perovskite compound can provide improved structural stability and physical properties compared to a dielectric not containing such a solid solution. For example, a dielectric containing a solid solution of a metal salt and a layered perovskite compound has a change rate of the dielectric constant at 200 °C with respect to the dielectric constant at 40 °C of -15% to 15%, and also has a dielectric constant of 200 or more at 1 kHz to 1 MHz.

[0044] The solid solution of the layered perovskite compound and the metal salt contained in the dielectric is also represented, for example, by the following Chemical Formulas 5 to 7: [Chemical Formula 5] xM a X b -(1 - x)AB2C n-3 D n O 3n+1 In Chemical Formula 5, A is a monovalent element, B is a divalent element, C is a monovalent element, D is a pentavalent element, n is a number from 3 to 6, M is an element of Group 1, Group 2 or Group 3 of the periodic table, X is a monovalent anion, a divalent anion or a trivalent anion, and consists of elements other than halogen, 0 < x < 1, 1 ≤ a ≤ 3 and 1 ≤ b ≤ 4.

[0045] For example, 0 < x < 0.2, 0.01 < x < 0.15, 0.02 < x < 0.1 or 0.03 < x < 0.1. [Chemical Formula 6] xM a X b -(1 - x)[(Bi2O2)(A’ n-1 B’ n O 3n+1 )] In the chemical formula 6, A’ is a monovalent, divalent or trivalent element, B’ is a trivalent, pentavalent or hexavalent element, n is a number from 3 to 6, M is an element of Group 1, Group 2 or Group 3 of the periodic table of elements, X is a monovalent anion, divalent anion or trivalent anion, composed of elements other than halogen, 0 < x < 1, 1 ≤ a ≤ 3 and 1 ≤ b ≤ 4.

[0046] For example, 0 < x < 0.2, 0.01 < x < 0.15, 0.02 < x < 0.1 or 0.03 < x < 0.1. [Chemical Formula 7] xM a X b -(1 - x)A” n-1 B”2C” n O 3n+1 In the chemical formula 7, A” is a monovalent, divalent or trivalent element, B” is a monovalent, divalent or trivalent element, C” is a trivalent, tetravalent, pentavalent or hexavalent element, n is a number from 1 to 6, M is an element of Group 1, Group 2 or Group 3 of the periodic table of elements, X is a monovalent anion, divalent anion or trivalent anion, composed of elements other than halogen, 0 < x < 1, 1 ≤ a ≤ 3 and 1 ≤ b ≤ 4.

[0047] For example, 0 < x < 0.2, 0.01 < x < 0.15, 0.02 < x < 0.1 or 0.03 < x < 0.1. The solid solution of the layered perovskite compound and the metal salt contained in the dielectric is also represented, for example, by the following Chemical Formulas 5a to 7a: [Chemical Formula 5a] xM a X b -(1 - x)ACa2C n-3 Nb n O 3n+1 In the Chemical Formula 5a, A is Na, K, Rb, or a combination thereof, C is Na, K, Rb, or a combination thereof, n is a number from 3 to 6, M is K, Na, Rb, or a combination thereof, X is OH - , CO3 2- , SO4 2- , NO 3- , PO4 3- , ONO3 3- and NO2 - and is one or more anions selected from among them, 0 < x < 1, 1 ≤ a ≤ 3 and 1 ≤ b ≤ 4.

[0048] For example, 0 < x < (0.2), 0.01 < x < 0.15, 0.02 < x < 0.1 or 0 < x < 0.1. [Chemical Formula 6a] xM a X b -(1 - x)[(Bi2O2)(A’ n-1 ​​​​​​​​​​​ n is a number from 3 to 6, M is K, Na, Rb, or a combination thereof, X is OH - , CO3 2- , SO4 2- , NO 3- , PO4 3- , ONO3 3- and NO2 - and is one or more anions selected from among them, 0 < x < 1, 1 ≤ a ≤ 3, and 1 ≤ b ≤ 4.

[0049] For example, 0 < x < 0.2, 0.01 < x < 0.15, 0.02 < x < 0.1, or 0.03 < x < 0.1. [Chemical Formula 7a] xM a X b -(1 - x)A” n-1 B”2C” n O 3n+1 In the chemical formula 7a above, A” is Na, K, Rb, Ca, Sr, Ba, or a combination thereof, B” is Na, K, Rb, Ca, Sr, Ba, or a combination thereof, C” is Sc, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, A, Ga, In, Tl, or a combination thereof, n is a number from 1 to 6, M is K, Na, Rb, or a combination thereof, X is OH - , CO3 2- , SO4 2- , NO 3- , PO4 3- , ONO3 3- and NO2 - and is one or more anions selected from among them, 0 < x < 1, 1 ≤ a ≤ 3, and 1 ≤ b ≤ 4.

[0050] For example, 0 <x<0.2、0.01<x<0.15、0.02<x<0.1または0.03<x<0.1である。

[0051] Another embodiment of the device includes a plurality of electrodes and the aforementioned dielectric disposed between the plurality of electrodes, for example, the device includes one or more anodes and one or more cathodes.

[0052] By including the dielectric material in the device, the dielectric properties, capacitance, etc. of the device are improved, resulting in improved electrical properties of the device.

[0053] The device is used in electric circuits, electronic circuits, electromagnetic circuits, etc., and is not particularly limited as long as it provides an electrical output in response to an electrical input. The electrical input may be a current or a voltage, and the current may be direct current or alternating current. The electrical input may be input continuously or intermittently at a fixed cycle. The device can store electrical energy, electrical signals, magnetic energy, and / or magnetic signals. The device may be a semiconductor, memory, processor, etc. The device may be, for example, a resistor, inductor, capacitor, etc.

[0054] The device may be, for example, a capacitor. The capacitor may be, for example, a stacked capacitor including a plurality of internal electrodes and the aforementioned dielectric layers disposed between the plurality of internal electrodes. Like a stacked capacitor, the capacitor may have an independent device form, but is not necessarily limited to such a form and may be included as part of a memory. The capacitor may be, for example, a metal-insulator-metal (MIM) capacitor implemented within a memory device.

[0055] Referring to FIG. 1 , a multilayer capacitor 1 according to one embodiment includes a plurality of internal electrodes 12 and dielectric layers 11 disposed between the plurality of internal electrodes 12. The plurality of internal electrodes 12 and the dielectric layers 11 are stacked one on top of the other, and the dielectric layers 11 include the dielectric material described above. Adjacent internal electrodes 12 are electrically isolated from each other by the dielectric layers 11 disposed therebetween. In the multilayer capacitor 1, the internal electrodes 12 and the dielectric layers 11 are alternately stacked, so that adjacent internal electrodes 12 and the dielectric layers 11 disposed between the internal electrodes 12 function as a single unit capacitor. For example, in the multilayer capacitor 1, adjacent unit capacitors function as separate capacitors via the dielectric layers 11 that share electrodes. The dielectric layers 11 may include the dielectric material described above and include a layered perovskite compound, with the perovskite compound layers being substantially parallel to the stacked layers of the multilayer capacitor 1.

[0056] In the multilayer capacitor 1, the numbers of alternately stacked internal electrodes 12 and dielectric layers 11 are independent of each other, and may be, for example, 2 or more, 5 or more, 10 or more, 20 or more, 50 or more, 100 or more, 200 or more, 500 or more, 1,000 or more, 2,000 or more, 5,000 or more, or 10,000 or more. The multilayer capacitor 1 provides capacitance due to a structure in which a plurality of unit capacitors are stacked. As the number of stacked internal electrodes 12 and dielectric layers 11 increases, the contact area between them increases, thereby improving the capacitance of the multilayer capacitor 1. For example, the internal electrodes 12 are arranged to have an area smaller than the area of ​​the dielectric layers 11. For example, the multiple internal electrodes 12 have the same area, but adjacent internal electrodes 12 are not arranged at the same positions relative to each other along the thickness direction of the multilayer capacitor 1. Adjacent internal electrodes 12 are stacked in such a manner that they partially protrude from both side surfaces of the multilayer capacitor 1 in the direction of the center line of the multilayer capacitor 1. The internal electrodes 12 can be formed, for example, by placing a conductive plate between the dielectrics and / or by using a conductive paste containing one or more selected from nickel (Ni), copper (Cu), palladium (Pd), and a palladium-silver (Pd-Ag) alloy. The conductive paste can be printed using a screen printing method or a gravure printing method, but is not limited to these methods. Any method known in the art for forming internal electrodes can be used. The thickness of the internal electrodes 12 can be, for example, 100 nm to 5 μm, 100 nm to 4 μm, 100 nm to 2.5 μm, 100 nm to 1 μm, 100 nm to 800 nm, 100 nm to 600 nm, 100 nm to 400 nm, or 100 nm to 200 nm.

[0057] Referring to FIG. 1 , a plurality of internal electrodes 12 are arranged on both sides of a multilayer capacitor 1 in a manner that partially protrudes from each other and are electrically connected to external electrodes 13. The external electrodes 13 are arranged on, for example, a laminate including the plurality of internal electrodes 12 and the aforementioned dielectric layers 11 arranged between the plurality of internal electrodes 12, and are connected to the internal electrodes 12. The multilayer capacitor 1 includes external electrodes 13 connected to the internal electrodes 12, respectively. The multilayer capacitor 1 includes, for example, a pair of external electrodes 13 surrounding both sides of the laminate structure formed by the dielectric layers 11 and the internal electrodes 12. The external electrodes 13 may be made of any material that has electrical conductivity, such as a metal, and the specific material may be determined taking into consideration electrical properties, structural stability, etc. The external electrodes 13 may have, for example, a multilayer structure. For example, the external electrodes 13 may include an electrode layer made of Ni that contacts the laminate and the internal electrodes 12, and a plating layer formed on the electrode layer.

[0058] 1, the dielectric layers 11 of the multilayer capacitor 1 are arranged to have an area larger than that of adjacent internal electrodes 12. In the multilayer capacitor 1, the dielectric layers 11 arranged between adjacent internal electrodes 12 are connected to each other, for example. The dielectric layers 11 arranged between adjacent internal electrodes 12 are connected to each other at sides that contact external electrodes 13 of the multilayer capacitor 1. The external electrodes 13 may be omitted, for example. When the external electrodes 13 are omitted, the internal electrodes 12 protrude from the sides of the multilayer capacitor 1 and are also connected to a power source.

[0059] In a unit capacitor including adjacent internal electrodes 12 and a dielectric layer 11 disposed therebetween, the thickness of the dielectric layer 11, i.e., the spacing between adjacent internal electrodes 12, is, for example, 10 nm to 1 μm, 50 nm to 900 nm, 100 nm to 800 nm, 100 nm to 700 nm, 100 nm to 600 nm, 100 nm to 500 nm, 100 nm to 400 nm, or 100 nm to 300 nm. In a unit capacitor including adjacent internal electrodes 12 and a dielectric layer 11 disposed therebetween, the dielectric constant of the dielectric layer 11 in the range of 1 kHz to 1 MHz at room temperature (25°C) is, for example, 200 or more, 300 or more, 400 or more, 500 or more, 1,000 or more, 2,000 or more, 3,000 or more, 4,000 or more, 5,000 or more, 6,000 or more, 7,000 or more, 8,000 or more, 9,000 or more, or 10,000 or more.

[0060] The multilayer capacitor 1 includes the dielectric layer 11 having such a thin thickness and a high dielectric constant, thereby improving the capacitance and reducing the thickness and volume of the multilayer capacitor 1. Therefore, it is possible to provide a capacitor that is miniaturized, thinned, and has a high capacitance.

[0061] FIG. 2 shows the structure of a metal-insulator-metal (MIM) capacitor according to an embodiment of the present invention.

[0062] An interlayer insulating film 203 may be stacked on the semiconductor substrate 201. Contact plugs 205 may be formed to fill contact holes where the semiconductor substrate 201 is exposed. A mold insulating film 213 may be formed on the semiconductor substrate on which the contact plugs 205 are formed. As shown in FIG. 2 , the mold insulating film 213 may have a structure in which a lower mold insulating film 207, an etch stop layer 209, and an upper mold insulating film 211 are sequentially stacked on the semiconductor substrate on which the contact plugs 205 are formed. However, illustrative embodiments are not limited thereto. For example, the etch stop layer 209 may be directly formed on the upper surfaces of the contact plugs 205 and the interlayer insulating film 203. In other embodiments, the mold insulating film 213 may be formed as a double-layer mold insulating film including the lower mold insulating film 207 and the upper mold insulating film 211 or a single mold insulating film. The lower mold insulating film 207 and the upper mold insulating film 211 may have an etching selectivity with respect to the etch stop layer 209. For example, when the lower mold insulating layer 207 and the upper mold insulating layer 211 are made of silicon oxide, the etch stop layer 209 may also be made of silicon nitride. The mold insulating layer 213 may be patterned to form a storage node hole 215 that exposes the top surface of the contact plug 205 and the top surface of the interlayer insulating layer 203 adjacent to the contact plug 205.

[0063] A conductive layer may be formed on the entire surface of the semiconductor substrate in which the storage node hole 215 is formed. The conductive layer may be formed of a conductive layer that has excellent step coverage, resistance to deformation during a subsequent dielectric layer formation process, and oxidation resistance. For example, the conductive layer may be formed of at least one metal nitride layer (e.g., titanium nitride (TiN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), tantalum aluminum nitride (TaAlN), and tungsten nitride (WN)). The conductive layer may be etched to separate it from the storage node hole 215, thereby forming the lower electrode 217'.

[0064] A buffer insulating layer (not shown) may be formed on the lower electrode conductive layer. A lower electrode 217′ separated from the storage node hole 215 and a buffer insulating layer pattern separated from the storage node hole 215 may be formed. The buffer insulating layer pattern may be selectively removed to expose the inner wall of the lower electrode 217′. A stacked capacitor 224, in which a lower dielectric layer 219 and an upper dielectric layer 223 are sequentially stacked, may be formed on the entire surface of the semiconductor substrate 201 on which the lower electrode 217′ is formed. The lower dielectric layer 219 and the upper dielectric layer 223 may also be dielectrics according to the above-mentioned illustrative embodiment.

[0065] An upper electrode 225 may be formed on the upper dielectric film 223. The upper electrode 225 may be formed of a metal film having a work function higher than that of the lower electrode 217'. The intermediate electrode film 221 is, for example, located between the lower dielectric film 219 and the upper dielectric film 223, increasing the contact area between the electrode and the dielectric layer. The multilayer capacitor 224 may include additional layers not shown.

[0066] The metal-insulator-metal (MIM) capacitor of FIG. 2 can have a concave structure or a cylinder structure.

[0067] FIG. 3 shows a trench capacitor type dynamic random access memory (DRAM) structure according to one embodiment.

[0068] As shown in FIG. 3, an isolation region is defined on a p-type semiconductor substrate 320 by a field oxide film 321, and a gate electrode 323 and source / drain impurity regions 322, 322' can be formed in the isolation region.

[0069] A high temperature oxide (HTO) film can be formed as the interlayer insulating film 324. The non-trench area is covered with a trench buffer layer, leaving a portion of the source region 322 open for contact formation.

[0070] A trench may be formed on the sidewall of the interlayer insulating film 324, and a sidewall oxide film 325 may be formed on the entire sidewall of the trench. The sidewall oxide film 325 may compensate for damage to the semiconductor substrate caused by etching during trench formation and may also serve as a dielectric film between the semiconductor substrate 320 and the storage electrode 326. Some sidewall portions of the source region 322 may be entirely exposed, except for another portion of the source region near the gate electrode 323.

[0071] A PN junction (not shown) can be formed in the sidewall of source region 322 by impurity implantation. The trench can be formed in source region 322. The trench sidewall near gate electrode 323 can be in direct contact with source region 322, and a PN junction can also be formed by additional impurity implantation in the source region.

[0072] A storage electrode 326 may be formed on a portion of the interlayer insulating film 324, the exposed source region, and the surface of the trench sidewall oxide film 325. The storage electrode 326 is, for example, an embodiment of a multilayer capacitor, and is formed to contact the entire source region 322 that contacts the upper sidewall of the trench, in addition to a portion of the source region 322 near the gate electrode 323. Next, an insulating film 327 including a dielectric according to the above-described embodiment may be formed along the top surface of the storage electrode 326, and a plate electrode 328 may be formed thereon. A stacked capacitor (not shown) may be formed to complete a trench capacitor-type DRAM.

[0073] According to another embodiment, a method for manufacturing a dielectric material includes preparing a mixture of a layered perovskite compound including at least one selected from the group consisting of a Dion-Jacopson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, and a metal salt; and heat-treating the mixture in a reducing atmosphere, wherein the metal salt is represented by the following Chemical Formula 8: [8] M a X b In the above Chemical Formula 8, M is an element of Group 1, 2, or 3 of the Periodic Table of Elements, or Bi; X is a monovalent anion, a divalent anion, or a trivalent anion, and is an element other than a halogen; 1≦a≦3 and 1≦b≦4.

[0074] In the method for producing a dielectric, the metal contained in the metal salt is the same as one or more metals selected from the metals contained in the layered perovskite compound containing one or more selected from the Dion-Jacopson phase, the Aurivillius phase, and the Ruddlesden-Popper phase. For example, the alkali metal contained in the metal salt is the same as the alkali metal contained in the layered perovskite compound containing the Dion-Jacopson phase. Therefore, the metal salt can effectively replenish the alkali metal in the layered perovskite compound that is volatilized during the reduction sintering process.

[0075] In this method for producing a dielectric, the use of a metal salt during heat treatment of a layered perovskite compound in a reducing atmosphere can effectively suppress defects in the dielectric that occur during the reduction process. For example, when a layered perovskite compound is heat treated in a reducing atmosphere without using the metal salt, the generation of oxygen vacancies and the volatilization of alkali metals become significant in the layered perovskite compound. Therefore, the temperature coefficient of dielectric constant (TCC) and / or the dielectric constant of the dielectric produced from the layered perovskite compound decrease.

[0076] During the manufacture of such a multilayer capacitor, for example, a dielectric precursor for forming a dielectric layer and a metal paste for forming an internal electrode are sequentially laminated and then heat-treated simultaneously. During this heat-treatment process, if the heat treatment is performed in an oxidizing atmosphere, the metal paste is oxidized. Therefore, to prevent this oxidation, heat treatment in a reducing atmosphere is required. Therefore, if the dielectric precursor, e.g., a layered perovskite compound, is severely degraded during the heat treatment in the reducing atmosphere, the physical properties of the resulting multilayer capacitor may be degraded. In contrast, a method for manufacturing a dielectric containing a metal salt prevents the degradation of the dielectric precursor, e.g., a layered perovskite compound, despite the heat treatment during the reduction process, thereby enabling the manufacture of a multilayer capacitor with improved physical properties.

[0077] The metal salt used in the production of the dielectric is, for example, represented by the following chemical formula 8a: [C8a] M a X b In the formula 8a, M is K, Na, Rb, Bi, or a combination thereof; X is O 2- OH - , CO3 2- , SO4 2- , NO 3- , PO4 3- , ONO3 3- and NO2 - and one or more anions selected from 1≦a≦3 and 1≦b≦4.

[0078] The metal salt used in the production of the dielectric includes, for example, one or more selected from K2O, Na2O, Rb2O, K2CO3, Na2CO3, Rb2CO3, K2SO4, Na2SO4, Rb2SO4, K2NO3, Na2NO3, Rb2NO3, KOH, NaOH, RbOH, K3PO4, Na3PO4, Rb3PO4, KNO2 and NaNO2.

[0079] The mixture containing the layered perovskite compound and the metal salt may contain, for example, 1 to 20 parts by weight, 3 to 20 parts by weight, 5 to 20 parts by weight, 5 to 15 parts by weight, or 5 to 10 parts by weight of the metal salt per 100 parts by weight of the layered perovskite compound. If the content of the metal salt is too low, it becomes difficult to suppress the generation of defects that occur during the reduction sintering process. If the content of the metal salt is too high, the content of the layered perovskite compound in the produced dielectric will be reduced, resulting in poor dielectric properties.

[0080] In the method for manufacturing a dielectric, the heat treatment in a reducing atmosphere may also be performed in an atmosphere containing hydrogen gas. In the hydrogen gas-containing atmosphere, the hydrogen gas content may be, for example, 0.1 to 10 volume %, 0.1 to 5 volume %, 0.1 to 3 volume %, or 0.5 to 2 volume % of the total gas volume. The remaining gas, excluding hydrogen gas, may be an inert gas. The inert gas may be, but is not limited to, argon or nitrogen, and any gas commonly used as an inert gas in the art may be used. The heat treatment in a reducing atmosphere may also be performed at a temperature range of, for example, 1,000 to 1,200°C, 1,000 to 1,100°C, or 1,000 to 1,050°C. Heat treatment in a reducing atmosphere and at such a temperature range may further improve the dielectric properties of the dielectric. The heat treatment in a reducing atmosphere may be performed for, for example, 12 to 36 hours, 12 to 24 hours, or 12 to 18 hours. By performing the heat treatment in a reducing atmosphere for such a time range, the dielectric properties of the dielectric can be further improved.

[0081] The method for manufacturing a dielectric may further include a heat treatment in an oxidizing atmosphere after the heat treatment in a reducing atmosphere. By further including the heat treatment in an oxidizing atmosphere, defects in the layered perovskite compound can be more effectively prevented. The heat treatment in an oxidizing atmosphere may also be performed in an atmosphere containing oxygen, carbon dioxide, air, etc. In the atmosphere containing oxygen, carbon dioxide, air, etc., the content of the oxygen, carbon dioxide, air, etc. is, for example, 0.1 to 10 vol%, 0.1 to 5 vol%, 0.1 to 3 vol%, or 0.5 to 2 vol% of the total gas volume. The remaining gas excluding oxygen, carbon dioxide, air, etc. may be an inert gas. The inert gas may be, but is not limited to, argon, nitrogen, etc., and any gas commonly used as an inert gas in the art may be used. The heat treatment in an oxidizing atmosphere may also be performed at a temperature range of, for example, 700 to 1,000°C, 700 to 900°C, or 700 to 800°C. By performing the heat treatment in an oxidizing atmosphere within such a temperature range, the dielectric properties of the dielectric may be further improved. In the method for manufacturing a dielectric, the heat treatment in an oxidizing atmosphere may be performed for, for example, 1 to 12 hours, 1 to 6 hours, or 1 to 3 hours. By performing the heat treatment in an oxidizing atmosphere within such a time range, the dielectric properties of the dielectric may be further improved.

[0082] The present invention will be described in more detail through the following examples and comparative examples, but the examples are intended to illustrate the present invention and are not intended to limit the scope of the present invention.

[0083] (dielectric manufacturing) Example 1: KCa 2 Na 3 Nb 6 O 19 and K. 2 CO 3 Dielectric manufacturing is a sintered mixture of K2CO3, CaCO3, and Nb2O5 were mixed in a molar ratio of 1.1:2:3, and then ethanol and zirconia balls were added. The mixture was then ball milled for 24 hours in an air atmosphere at room temperature to prepare a mixture. The mixture was dried at 100°C for one day to obtain a dry powder. The contents of K2CO3, CaCO3, and Nb2O5 were as follows: KCa2Nb3O 10 The stoichiometric content was controlled so that

[0084] The dried powder was placed in an alumina crucible and subjected to primary heat treatment at 1,200°C in an air atmosphere for 24 hours to obtain KCa2Nb3O 10 obtained.

[0085] KCa2Nb3O 10 It was confirmed that the number of NbO6 octahedra layers contained in the Dion-Jacopson phase is three (n=3).

[0086] KCa2Nb3O 10 NaNbO3 was added to the mixture in a molar ratio of 1:3, and then ethanol and zirconia balls were added. After that, ball milling was carried out for 24 hours in an air atmosphere at room temperature to prepare a mixture. The prepared mixture was dried to obtain a dry powder. The dried powder was placed in an alumina crucible and subjected to a secondary heat treatment at 1,300°C in an air atmosphere for 24 hours to obtain KCa2Na3Nb6O 19 KCa2Nb3O 10 and NaNbO3 content is the target KCa2Na3Nb6O 19 The stoichiometric content was controlled so that

[0087] KCa2Na3Nb6O 19 The XRD (X-ray diffraction) spectrum of KCa2Na3Nb6O was measured. 19 It was confirmed that the material has a layered perovskite structure containing a single phase, namely the Dion-Jacopson phase.

[0088] KCa2Na3Nb6O 19 It was confirmed that the number of NbO6 octahedral layers contained in the Dion-Jacopson phase is six (n=6).

[0089] KCa2Na3Nb6O 19 To 100 parts by weight of the powder, 10 parts by weight of K2CO3 was added as a metal salt, and ethanol and zirconia balls were added. Then, ball milling was carried out for 24 hours in an air atmosphere at room temperature to prepare a mixture. The prepared mixture was pressed under uniaxial pressure to prepare pellets. The prepared pellets were then subjected to primary sintering for 12 hours in a reducing atmosphere (argon atmosphere containing 1 vol% hydrogen) at 1,000°C to obtain a sintered product.

[0090] The obtained sintered product was subjected to secondary sintering at 700° C. in an oxidizing atmosphere (nitrogen atmosphere containing 1 to 10 vol % oxygen) for 2 hours to produce a dielectric.

[0091] The dielectric material used is KCa2Na3Nb6O 19 The present invention relates to a sintered product of a layered perovskite compound containing a Dion-Jacopson phase having the following composition:

[0092] Example 2: KCa 2 Nb 3 O 10 and K. 2 CO 3 Dielectric manufacturing is a sintered mixture of Layered perovskite compounds include KCa2Na3Nb6O 19 Instead of KCa2NaNb3O 10 A dielectric was prepared in the same manner as in Example 1, except that the following was used: The dielectric material used was KCa2Nb3O 10 The present invention relates to a sintered product of a layered perovskite compound containing a Dion-Jacopson phase having the following composition:

[0093] Example 3: NaCa 2 Nb 3 O10 and Na 2 CO 3 Dielectric manufacturing is a sintered mixture of Na2CO3, CaCO3, and Nb2O5 were mixed in a molar ratio of 1.1:2:3, and then ethanol and zirconia balls were added. The mixture was then ball milled for 24 hours in an air atmosphere at room temperature to prepare a mixture. The mixture was dried at 100°C for one day to obtain a dry powder. The contents of Na2CO3, CaCO3, and Nb2O5 were as follows: NaCa2Nb3O 10 The stoichiometric content was controlled so that

[0094] The dried powder was placed in an alumina crucible and subjected to primary heat treatment at 1,200°C in an air atmosphere for 24 hours to obtain NaCa2Nb3O 10 obtained.

[0095] NaCaNbO 10 The XRD spectrum of NaCa2Nb3O was measured. 10 It was confirmed that the material has a layered perovskite structure containing a single phase, namely the Dion-Jacopson phase.

[0096] NaCaNbO 10 It was confirmed that the number of NbO6 octahedral layers contained in the Dion-Jacopson phase is three (n=3).

[0097] Layered perovskite compounds include KCa2Na3Nb6O 19 Instead of NaCa2Nb3O 10 A dielectric was prepared in the same manner as in Example 1, except that Na2CO3 was used as the metal salt. The dielectric material produced was NaCa2Nb3O 10 The present invention relates to a sintered product of a layered perovskite compound containing a Dion-Jacopson phase having the following composition:

[0098] Comparative Example 1: KCa 2 Na 3 Nb 6 O19 Dielectric manufacturing, which is a sintered material A dielectric was prepared in the same manner as in Example 1, except that K2CO3 was not added during primary sintering.

[0099] Comparative Example 2: KCa 2 Nb 3 O 10 Dielectric manufacturing, which is a sintered material A dielectric was prepared in the same manner as in Example 2, except that K2CO3 was not added during primary sintering.

[0100] Comparative example 3: NaCa 2 Nb 3 O 10 Dielectric manufacturing, which is a sintered material A dielectric was produced in the same manner as in Example 3, except that Na2CO3 was not added during primary sintering.

[0101] Comparative example 4: CsCa 2 Nb 3 O 10 Dielectric manufacturing, which is a sintered material Cs2CO3, CaCO3, and Nb2O5 were mixed in a molar ratio of 1.1:2:3, and then ethanol and zirconia balls were added. The mixture was then ball milled for 24 hours in an air atmosphere at room temperature to prepare a mixture. The mixture was dried at 100°C for one day to obtain a dry powder. The contents of Cs2CO3, CaCO3, and Nb2O5 were CsCa2Nb3O 10 The stoichiometric content was controlled so that

[0102] The dried powder was placed in an alumina crucible and subjected to primary heat treatment at 1,200°C in an air atmosphere for 24 hours to obtain CsCa2Nb3O 10 obtained.

[0103] CsCa2Nb3O 10 The XRD spectrum of the compound was measured and it was confirmed that the compound had a layered perovskite structure containing the Dion-Jacopson phase.

[0104] CsCa2Nb3O 10 It was confirmed that the number of NbO6 octahedral layers contained in the Dion-Jacopson phase is three (n=3).

[0105] KCa2Na3Nb6O 19 Instead of 100 parts by weight, CsCa2Nb3O 10 A dielectric was prepared in the same manner as in Example 1, except that 100 parts by weight of the above was used and no metal salt was added.

[0106] The dielectric material used is CsCa2Nb3O 10 The present invention relates to a sintered product of a layered perovskite compound containing a Dion-Jacopson phase having the following composition:

[0107] Evaluation example 1: X-ray diffraction experiment Powder XRD spectra were measured for the layered perovskite compound used in producing the dielectric in Example 1, the dielectric of Example 1 produced from the layered perovskite compound, and the dielectric of Comparative Example 1, and the results are shown in FIG. 4A.

[0108] Powder XRD spectra were measured for the layered perovskite compound used in producing the dielectric in Example 2, the dielectric of Example 2 produced from the layered perovskite compound, and the dielectric of Comparative Example 2, and the results are shown in FIG. 4B.

[0109] Powder XRD spectra were measured for the layered perovskite compound used in producing the dielectric in Example 3, the dielectric of Example 3 produced from the layered perovskite compound, and the dielectric of Comparative Example 3, and the results are shown in FIG. 4C.

[0110] Powder XRD spectra were measured for the layered perovskite compound used in the production of the dielectric in Comparative Example 4 and the dielectric of Comparative Example 4 produced from the layered perovskite compound, and the results are shown in FIG. 4D.

[0111] Cu Kα radiation was used for XRD spectrum measurement. The dielectrics used in Example 1 and Comparative Example 1 were powders obtained by pulverizing pellets.

[0112] As can be seen from FIG. 4A, the dielectric of Example 1 and the dielectric of Comparative Example 1 show spectra that are substantially identical to those of the starting materials.

[0113] As can be seen from FIG. 4B, the dielectric of Example 2 and the dielectric of Comparative Example 2 also show substantially the same XRD spectrum as the starting material.

[0114] As can be seen from FIG. 4C, the dielectric of Example 3 and the dielectric of Comparative Example 3 also show substantially the same XRD spectrum as the starting material.

[0115] As can be seen from FIG. 4D, the dielectric of Comparative Example 4 also exhibits substantially the same XRD spectrum as the starting material.

[0116] Therefore, it was confirmed that the dielectrics of the examples and comparative examples contain a phase having substantially the same crystal structure as the layered perovskite compound that is the starting material.

[0117] Evaluation example 2: Raman spectrum experiment Raman spectra were measured for the layered perovskite compound used in producing the dielectric in Example 1, the dielectric of Example 1 produced from the layered perovskite compound, and the dielectric of Comparative Example 1, and the results are shown in Figure 5. The dielectrics of Example 1 and Comparative Example 1 were powders obtained by pulverizing pellets.

[0118] As can be seen from FIG. 5, the dielectric of Comparative Example 1 obtained by sintering without using metal salts has a 200 cm -1 or 300cm -1 The peak indicated by is approximately 10 cm at high wavenumbers. -1The shift in the position and broadening of the Raman peaks was attributed to structural defects in the layered perovskite compound contained in the sintered material, such as oxygen vacancies and alkali metal volatilization, which occur during the reduction sintering process required for dielectric fabrication.

[0119] In contrast, the dielectric of Example 1 exhibited a peak at the same position as that of the layered perovskite compound used in the production of the dielectric, and the peak was also sharp, i.e., there was almost no shift of the peak.

[0120] The reduction in the position shift and sharpening of the Raman peaks was attributed to the suppression of structural defects in the layered perovskite compound contained in the sintered product by the addition of metal salts, which suppressed oxygen vacancies and alkali metal volatilization that occur during the reduction sintering process required for dielectric fabrication. In other words, the structural stability of the layered perovskite compound used in dielectric fabrication was maintained despite the reduction sintering process.

[0121] Evaluation example 3: Permittivity measurement and temperature characteristic evaluation of permittivity Silver (Ag) electrodes were applied to both sides of the dielectric pellets prepared in Examples 1 to 3 and Comparative Examples 1 to 4 to prepare specimens. The dielectric constant of the specimens with electrodes formed on both sides was measured using an LCR meter (Agilent, E4980A) at 25°C and 1 kHz / 1.0 V. To determine the temperature characteristic of the dielectric constant, i.e., the temperature coefficient of capacitance (TCC), the capacitance was measured at 10°C intervals from 40°C to 200°C in a thermo-hygrostat according to EIA specification X7R. Some of the results are shown in Figure 6 and Table 1. The temperature characteristic of the dielectric constant is expressed by the following equation 1. The temperature characteristic of the dielectric constant is obtained by measuring the capacitance as a function of temperature. [Number 1] TCC (%) = [(Capacitance at 200°C - Capacitance at 40°C) / Capacitance at 40°C] x 100

[0122] [Table 1]

[0123] As can be seen from Table 1, the dielectrics of Examples 1 to 3 exhibited a change in capacitance in the range of -15% to 15% in the temperature range of 40°C to 200°C, while exhibiting a dielectric constant of 200 or more.

[0124] Therefore, the dielectrics of Examples 1 to 3 exhibited stable temperature characteristics of dielectric constant and also exhibited good dielectric constant.

[0125] Furthermore, the dielectrics of Examples 1 and 2 were improved in terms of the dielectric constant temperature characteristic and the dielectric constant drift compared to the dielectric of Example 3.

[0126] In contrast, the dielectrics of Comparative Examples 1 to 4 either did not have excellent temperature characteristics of the dielectric constant or had excessively low dielectric constants. [Explanation of symbols]

[0127] 1. Multilayer capacitor 11 Dielectric layer 12 Internal electrode 13 External electrode 201 Semiconductor substrate 203 Interlayer insulating film 205 Contact plug 207 Lower mold insulating film 209 Etching stop film 211 Upper mold membrane 215 Storage Node Hall 217' Lower electrode 219 Lower dielectric film 221 Intermediate electrode membrane 223 Upper dielectric film 224 Stacked Capacitor 225 Upper electrode

Claims

1. comprising a layered perovskite compound and a metal salt, The layered perovskite compound includes one or more selected from a Dion-Jacopson phase, an Aurivillius phase, and a Ruddlesden-Popper phase; The change in capacitance at 200°C (TCC) relative to the capacitance at 40°C is -15% to 15%; A dielectric constant of 200 or more at 1 kHz to 1 MHz, the layered perovskite compound and the metal salt are in a solid solution; The solid solution of the layered perovskite compound and the metal salt is a dielectric represented by the following chemical formulas 5 to 7: [C5] xM ａ X ｂ -(1-x)AB ２ C ｎ－３ D ｎ O ３ｎ＋１ In the above Chemical Formula 5, A contains a monovalent element, B contains a divalent element, C includes a monovalent element, D comprises a pentavalent element; n is a number from 3 to 6, M comprises a Group 1, 2 or 3 element of the Periodic Table of the Elements; X is an element other than a halogen, and includes a monovalent anion, a divalent anion, or a trivalent anion; 0<x<1, 1≦a≦3 and 1≦b≦4; [Case 6] x* ａ ︸ ｂ (()) ２ . ２ ) ()' ｎ－１ .' ｎ . ３ｎ＋１ ) In the above Chemical Formula 6, A' comprises a monovalent, divalent or trivalent element; B' comprises a trivalent, pentavalent or hexavalent element; n is a number from 3 to 6, M comprises a Group 1, 2 or 3 element of the Periodic Table of the Elements; X is an element other than a halogen, and includes a monovalent anion, a divalent anion, or a trivalent anion; 0<x<1, 1≦a≦3 and 1≦b≦4; [C7] xM ａ X ｂ -(1-x)A” ｎ－１ B” ２ C” ｎ O ３ｎ＋１ In the above Chemical Formula 7, A" comprises a monovalent, divalent or trivalent element; B″ comprises a monovalent, divalent or trivalent element; C″ comprises a trivalent, tetravalent, pentavalent or hexavalent element; n is a number from 1 to 6; M comprises a Group 1, 2 or 3 element of the Periodic Table of the Elements; X is an element other than a halogen, and includes a monovalent anion, a divalent anion, or a trivalent anion; 0<x<1, 1≦a≦3, and 1≦b≦4.

2. The dielectric according to claim 1, wherein the layered perovskite compound containing the Dion-Jacopson phase is represented by the following chemical formula 1: [Chemical formula 1] AB ２ C ｎ－３ D ｎ O ３ｎ＋１ In the above Chemical Formula 1, A contains a monovalent element, B contains a divalent element, C includes a monovalent element, D comprises a pentavalent element; n is a number from 3 to 6.

3. The dielectric of claim 2 , wherein in Formula 1, A and C each independently comprise Na, K, Rb, or a combination thereof.

4. The dielectric of claim 2 , wherein B in Formula 1 includes Ca, Sr, Ba, or a combination thereof.

5. The dielectric of claim 2 , wherein D in Formula 1 includes Nb, V, Ta, or a combination thereof.

6. The dielectric according to claim 1, wherein the layered perovskite compound containing the Dion-Jacopson phase is represented by the following chemical formula 2: [Case 2] AC ２ C ｎ－３ Nb ｎ O ３ｎ＋１ In the above Chemical Formula 2, A comprises Na, K, Rb, or a combination thereof; C comprises Na, K, Rb, or a combination thereof; n is a number from 3 to 6.

7. The layered perovskite compound containing the Dion-Jacopson phase is ２ Nb ３ O １０ , K.Ca. ２ NaNb ４ O １３ , K.Ca. ２ Na ２ Nb ５ O １６ , K.Ca. ２ Na ３ Nb ６ O １９ , K.Ca. ２ KNb ４ O １３ , K.Ca. ２ K ２ Nb ５ O １６ , K.Ca. ２ K ３ Nb ６ O １９ , K.Ca. ２ RbNb ４ O １３ , K.Ca. ２ Rb ２ Nb ５ O １６ , K.Ca. ２ Rb ３ Nb ６ O １９ , NaCa ２ Nb ３ O １０ , NaCa ２ KNb ４ O １３ , NaCa ２ K ２ Nb ５ O １６ , NaCa ２ K ３ Nb ６ O １９ , NaCa ２ NaNb ４ O １３ , NaCa ２ Na ２ Nb ５ O １６ , NaCa ２ Na ３ Nb ６ O １９ , NaCa ２ RbNb ４ O １３ , NaCa ２ Rb ２ Nb ５ O １６ , NaCa ２ Rb ３ Nb ６ O １９ , RbCa ２ Nb ３ O １０ , RbCa ２ KNb ４ O １３ , RbCa ２ K ２ Nb ５ O １６ , RbCa ２ K ３ Nb ６ O １９ , RbCa ２ RbNb ４ O １３ , RbCa ２ Rb ２ Nb ５ O １６ , RbCa ２ Rb ３ Nb ６ O １９ , RbCa ２ NaNb ４ O １３ , RbCa ２ Na ２ Nb ５ O １６ , RbCa ２ Na ３ Nb ６ O １９ 10. The dielectric of claim 1, comprising:

8. 8. The dielectric according to claim 1, which is a sintered product of a layered perovskite compound containing one or more selected from the Dion-Jacopson phase, the Aurivillius phase, and the Ruddlesden-Popper phase.

9. In the Raman spectrum of the dielectric, －１ or 300 cm －１ and the position of the peak indicated by In the Raman spectrum of the unsintered layered perovskite compound used to produce the dielectric, －１ or 300 cm －１ The difference between the peak position shown by －１ 9. The dielectric of claim 8, wherein:

10. The dielectric according to claim 1, wherein the layered perovskite compound containing the Aurivillius phase is represented by the following chemical formula 3: [Chemical 3] (Bi ２ O ２ )(A' ｎ－１ B' ｎ O ３ｎ＋１ ) In the above Chemical Formula 3, A' comprises a monovalent, divalent or trivalent element; B' comprises a trivalent, pentavalent or hexavalent element; n is a number from 3 to 6.

11. In Formula 3, A' includes Na, K, Rb, Ca, Sr, or a combination thereof; 11. The dielectric of claim 10, wherein B' comprises Sc, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, A, Ga, In, Tl, or a combination thereof.

12. The dielectric according to claim 1, wherein the layered perovskite compound containing the Ruddlesden-Popper phase is represented by the following chemical formula 4: [C4] A” ｎ－１ B” ２ C” ｎ O ３ｎ＋１ In the above Chemical Formula 4, A" comprises a monovalent, divalent or trivalent element; B″ comprises a monovalent, divalent or trivalent element; C″ comprises a trivalent, tetravalent, pentavalent or hexavalent element; n is a number from 1 to 6.

13. A" and B" each independently comprise Na, K, Rb, Ca, Sr, Ba, or a combination thereof; 13. The dielectric of claim 12, wherein C" comprises Sc, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, A, Ga, In, Tl, or a combination thereof.

14. A plurality of electrodes; and a dielectric material according to any one of claims 1 to 13 disposed between the plurality of electrodes.

15. The device of claim 14 , wherein the device is a capacitor.

16. The capacitor is A plurality of internal electrodes; 16. The device of claim 15, wherein the device is a stacked capacitor including: a dielectric layer interposed between the plurality of internal electrodes.

17. 17. The device of claim 16, wherein the dielectric layer has a dielectric constant of 500 or greater at 1 kHz to 1 MHz.

18. preparing a mixture of a layered perovskite compound including at least one selected from the group consisting of a Dion-Jacopson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, and a metal salt; heat-treating the mixture in a reducing atmosphere; The metal salt is represented by the following chemical formula 8: [Chem.8] M ａ X ｂ In the above Chemical Formula 8, M comprises an element of Group 1, 2, or 3 of the Periodic Table of the Elements, or Bi; X is an element other than a halogen, and includes a monovalent anion, a divalent anion, or a trivalent anion; 1≦a≦3 and 1≦b≦4.

19. The method for producing a dielectric according to claim 18, wherein the metal salt is represented by the following chemical formula 8a: [Chemical formula 8a] M ａ X ｂ In the above formula 8a, M comprises K, Na, Rb, Bi, or a combination thereof; X is O ２－ , O.H. － , CO ３ ２－ , S.O. ４ ２－ , NO ３－ , P.O. ４ ３－ , ONO ３ ３－ and NO ２ － and 1≦a≦3 and 1≦b≦4.

20. The metal salt is K ２ O, Na ２ O, Rb ２ O.K. ２ CO ３ , Na ２ CO ３ , Rb ２ CO ３ , K. ２ SO ４ , Na ２ SO ４ , Rb ２ SO ４ , K. ２ NO ３ , Na ２ NO ３ , Rb ２ NO ３ , KOH, NaOH, RbOH, K ３ P.O. ４ , Na ３ P.O. ４ , Rb ３ P.O. ４ , KNO ２ and NaNO ２ The method for producing a dielectric according to claim 18 , comprising one or more selected from the following:

21. 21. The method for producing a dielectric according to claim 18, wherein the mixture contains 5 to 20 parts by weight of the metal salt relative to 100 parts by weight of the layered perovskite compound.

22. 22. The method of claim 18, wherein the heat treatment in a reducing atmosphere is performed in an atmosphere containing hydrogen gas at a temperature in the range of 1,000 to 1,200[deg.] C. for 12 to 36 hours.

23. The method for producing a dielectric according to claim 18 , further comprising the step of performing a heat treatment in an oxidizing atmosphere after the step of performing the heat treatment in the reducing atmosphere.

24. 24. The method of claim 23, wherein the heat treatment in an oxidizing atmosphere is performed in an atmosphere containing oxygen, carbon dioxide, or air at a temperature in the range of 700 to 1000[deg.] C. for 1 to 12 hours.

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