Light emitting device including nanoholes to which metal nanoparticles are applied and method for manufacturing the same

Abstract

The light emitting device including nanoholes may include a first conductive type semiconductor layer, an active layer formed on the first conductive type semiconductor layer, a second conductive type semiconductor layer formed on the active layer, and nanoholes coated with nanoparticles that cause surface plasmon resonance. The nanoholes may be formed to a depth penetrating the second conductive type semiconductor layer and the active layer. Since the nanoparticles are semi-permanently coated at a close distance to the active layer via the nanoholes, the effect of surface plasmon resonance in the light emitting device may be maximized.

Description

[Technical Field]

[0001] The present invention relates to a light emitting device using nanoparticles, and more particularly to a light emitting device including nanoholes using metal nanoparticles, and a method for manufacturing a light emitting device including nanoholes using metal nanoparticles. [Background technology]

[0002] The plasmonic effect is a phenomenon in which free electrons in a metal collectively vibrate due to external light, and corresponds to the photo-electron effect that occurs in metals. This plasmonic effect is due to a resonance phenomenon in which most of the light energy is transferred to free electrons when incident light of a specific wavelength is present.

[0003] In the case of nano-sized metal particles, the electric field of visible or near-infrared light pairs with plasmons, causing light absorption and resulting in vivid colors. This phenomenon is called surface plasmon resonance, and surface plasmon resonance can generate a significantly increased electric field locally.

[0004] Such electric fields can be generated by the conversion of light energy into surface plasmons and the accumulation of these energy on the surface of metal nanoparticles. The generation of electric fields can also mean that optical control is possible in areas smaller than the diffraction limit of light.

[0005] Metal nanoparticles have strong and unique interactions with electromagnetic waves, such as the surface plasmon resonance phenomenon, which allows for the amplification and control of light absorption bands. This makes them promising for applications in a variety of fields, including fluorescence spectroscopy, various types of sensors, and optoelectronic devices.

[0006] However, conventional light emitting devices have the problem that the process of semi-permanently coating metal nanoparticles on LEDs is complicated, and there is a limit to increasing the surface plasmon effect due to the metal nanoparticles. Summary of the Invention [Problem to be solved by the invention]

[0007] One object of the present invention is to provide a light emitting device that includes nanoholes coated with nanoparticles and formed to a depth that penetrates the active layer.

[0008] Another object of the present invention is to provide a light emitting device that maximizes the effect of surface plasmon resonance caused by nanoparticles.

[0009] Another object of the present invention is to provide a method for manufacturing a light emitting device including the nanoholes.

[0010] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and can be variously expanded within the scope of the present invention. [Means for solving the problem]

[0011] To achieve one object of the present invention, a light emitting device including nanoholes according to an embodiment of the present invention may include a first conductive type semiconductor layer, an active layer formed on the first conductive type semiconductor layer, a second conductive type semiconductor layer formed on the active layer, and nanoholes coated with nanoparticles that cause surface plasmon resonance. The nanoholes may be formed to a depth that penetrates the second conductive type semiconductor layer and the active layer.

[0012] In one embodiment, the nanoholes may be formed through a process of forming an ohmic metal on the second conductive type semiconductor layer, vertically etching the ohmic metal, the second conductive type semiconductor layer, and the active layer to form holes having a depth penetrating the active layer, and coating the nanoparticles inside the holes.

[0013] In one embodiment, the nanoparticles may be coated into the nanoholes using at least one of a drop casting process, a spin coating process, an electrophoresis process, and a dewetting process.

[0014] In one embodiment, the active layer can emit red light having a wavelength of 620 nm to 680 nm, and the nanoparticles can include Au having a first shape for generating surface plasmon resonance for the wavelength of the red light.

[0015] In one embodiment, the nanoparticles may be at least one of core nanoparticles having a core structure and core-shell nanoparticles having a core-shell structure.

[0016] In one embodiment, the nanoparticles may include at least one of palladium (Pd), aluminum (Al), silver (Ag), platinum (Pt), copper (Cu), gold (Au), chromium (Cr), and rhodium (Rh).

[0017] In one embodiment, the nanohole may include an insulating film disposed between the nanoparticle and the active layer, and the nanoparticle may generate surface plasmon resonance with the active layer across the insulating film.

[0018] In one embodiment, the insulating film may include at least one of SiO2, TiO2, ZrO2, and Al2O3.

[0019] In one embodiment, the diameter of the nanoholes may be 100 nm to 5 μm.

[0020] In one embodiment, the center-to-center spacing of the nanoholes may be 100 nm to 10 μm.

[0021] To achieve another object of the present invention, a method for manufacturing a light emitting device including nanoholes according to an embodiment of the present invention may include the steps of forming an LED and an ohmic metal, performing a photolithography process, forming nanoholes, depositing a first insulating film, removing the PR, coating nanoparticles, depositing a second insulating film, exposing the p-ohmic metal, exposing the n-GaN, and forming metal pads. The LED may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The nanoholes may be formed to a depth that penetrates the second conductive type semiconductor layer and the active layer. [Effects of the Invention]

[0022] A light emitting device including nanoholes according to an embodiment of the present invention may include nanoholes coated with nanoparticles and formed to a depth penetrating an active layer. Since the nanoparticles are semi-permanently coated in close proximity to the active layer through the nanoholes, the effect of surface plasmon resonance in the light emitting device including nanoholes may be increased.

[0023] Therefore, according to the light emitting device including nanoholes and the method for manufacturing the light emitting device including nanoholes according to the embodiments of the present invention, the light emitting efficiency of the light emitting device can be maximized.

[0024] However, the effects of the present invention are not limited to the above-mentioned effects, and can be variously expanded within the scope of the present invention. [Brief explanation of the drawings]

[0025] [Figure 1] 1 is a cross-sectional view showing a layered structure of a light-emitting device including nanoholes according to an embodiment of the present invention. [Figure 2] FIG. 2 is a perspective view showing a layered structure of the light-emitting element including nanoholes of FIG. [Figure 3] FIG. 2 is an enlarged view showing nanoholes of a light-emitting device containing nanoholes. [Figure 4] FIG. 1 is an enlarged view showing nanoparticles coated in nanoholes. [Figure 5] 1 is an optical image showing an example of a nanoparticle. [Figure 6] 2 is a flowchart showing a method for manufacturing the light-emitting device including the nanoholes of FIG. 1. [Figure 7] 2A to 2C are diagrams illustrating a process for manufacturing the light-emitting device including the nanoholes of FIG. 1. [Figure 8] 1 is a diagram illustrating a case where a light emitting device including nanoholes according to an embodiment of the present invention emits light from the front side. [Figure 9] 1 is a diagram illustrating a case where a light emitting device including nanoholes according to an embodiment of the present invention emits light from the back side. DETAILED DESCRIPTION OF THE INVENTION

[0026] Specific structural or functional descriptions of embodiments in accordance with the inventive concepts disclosed herein are provided solely for purposes of illustrating embodiments in accordance with the inventive concepts, which may be embodied in various forms and are not limited to the embodiments described herein.

[0027] Because embodiments according to the inventive concept may be variously modified and may have various forms, the embodiments are illustrated in the drawings and described in detail herein, but it is not intended to limit the embodiments according to the inventive concept to the particular disclosed forms, and all modifications, equivalents, or alternatives within the spirit and scope of the present invention are encompassed.

[0028] Terms such as "first" or "second" may be used to describe various components, but the components should not be limited by the terms. The terms are used only to distinguish one component from another, for example, a first component may be named a second component, and similarly, a second component may be named a first component, without departing from the scope of the inventive concept.

[0029] When a component is referred to as being "coupled" or "connected" to another component, it should be understood that although the component may be directly coupled or connected to the other component, there may be other components between them. Conversely, when a component is referred to as being "directly coupled" or "directly connected" to another component, it should be understood that there are no other components between them. Expressions describing the relationship between components, such as "between," "immediately between," or "directly adjacent to," should be interpreted similarly.

[0030] The terms used in this specification are merely used to describe particular embodiments and are not intended to limit the present invention. The singular expressions include the plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprise" or "have" are intended to specify the presence of stated features, numbers, steps, operations, components, parts, or combinations thereof, and should be understood as not precluding the presence or possibility of addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0031] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention belongs. Terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0032] FIG. 1 is a cross-sectional view showing the layered structure of a light-emitting device including nanoholes according to an embodiment of the present invention, and FIG. 2 is a perspective view showing the layered structure of the light-emitting device including nanoholes of FIG.

[0033] 1 and 2, the light emitting device including nanoholes may include a first conductive type semiconductor layer 200, an active layer 300, a second conductive type semiconductor layer 400, and nanoholes NH.

[0034] In addition, the light emitting device including nanoholes may further include a substrate 100 under the first conductive type semiconductor layer 200 , an ohmic metal 500 over the second conductive type semiconductor layer 400 , and a metal pad 600 .

[0035] Specifically, the light-emitting device including the nanohole may include a first conductive type semiconductor layer 200 formed on a substrate 100, an active layer 300 formed on the first conductive type semiconductor layer 200, a second conductive type semiconductor layer 400 formed on the active layer 300, and a nanohole NH coated with nanoparticles NP that cause surface plasmon resonance.

[0036] The substrate 100 may be made of a material on which a semiconductor such as GaN can be epitaxially grown, and may include, for example, at least one of sapphire, silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), silicon (Si), gallium phosphide (GaP), indium phosphide (InP), zinc oxide (ZnO), MgAlO, MgO, LiAlO, and LiGaO.

[0037] The first conductive type semiconductor layer 200 and the second conductive type semiconductor layer 400 may each be at least one of an n-type semiconductor layer and a p-type semiconductor layer.

[0038] For example, the first conductive type semiconductor layer 200 and the second conductive type semiconductor layer 400 may be made of a nitride semiconductor.

[0039] The first conductive type semiconductor layer 200 and the second conductive type semiconductor layer 400 may be made of a material such as GaN, AlGaN, or InGaN.

[0040] For example, the n-type impurity of the first conductive type semiconductor layer 200 may be Si, Ge, Se, Te, or the like.

[0041] For example, the p-type impurity of the second conductive type semiconductor layer 400 may be Mg, Zn, Be, or the like.

[0042] The first conductive type semiconductor layer 200 and the second conductive type semiconductor layer 400 may be formed by at least one of an MOCVD process, an MBE process, and an HVPE process.

[0043] The active layer 300 can emit light having a predetermined energy due to the recombination of electrons and holes.

[0044] For example, the active layer 300 may be a layer of a single material such as InGaN.

[0045] For example, the active layer 300 may be formed in a multiple quantum well (MQW) structure in which quantum barrier layers and quantum well layers are alternately arranged.

[0046] The active layer 300 may include at least one of GaN, AlN, InN, InGaN, AlGaN, and InAlGaN.

[0047] For example, when the active layer 300 has a multiple quantum well (MQW) structure, a material having a small energy band gap among GaN, AlN, InN, InGaN, AlGaN, and InAlGaN may be configured as the quantum well layer, and a material having a large energy band gap among GaN, AlN, InN, InGaN, AlGaN, and InAlGaN may be configured as the quantum barrier layer.

[0048] The first conductive type semiconductor layer 200, the active layer 300, and the second conductive type semiconductor layer 400 may form one unit LED structure.

[0049] The ohmic metal 500 may be formed on the second conductive type semiconductor layer 400. The ohmic metal 500 may be an electrode for applying a voltage to the second conductive type semiconductor layer 400. For example, the ohmic metal 500 may be a p-ohmic metal.

[0050] The nanoholes NH may be formed in a direction perpendicular to the surface where the first conductive type semiconductor layer 200, the active layer 300, and the second conductive type semiconductor layer 400 are stacked. The nanoholes NH may be repeatedly formed in a regular array in the unit LED structure in the vertical direction.

[0051] The nanoholes NH may be formed to a depth penetrating the second conductive type semiconductor layer 400 and the active layer 300. For example, the nanoholes NH may be formed penetrating the active layer 300 and up to a portion of the first conductive type semiconductor layer 200.

[0052] The nanoholes (NH) may be coated with nanoparticles (NP) that generate surface plasmon resonance. For example, the nanoholes (NH) may include an insulating film disposed between the nanoparticles (NP) and the active layer 300. The nanoparticles (NP) may generate surface plasmon resonance with the active layer 300 across the insulating film.

[0053] Specifically, the nanoholes NH can be formed through the steps of forming an ohmic metal 500 on the second conductive type semiconductor layer 400, vertically etching the ohmic metal 500, the second conductive type semiconductor layer 400, and the active layer 300 to form holes deep enough to penetrate the active layer 300, and coating the nanoparticles NP inside the holes.

[0054] Meanwhile, a specific manufacturing process of the light emitting device including nanoholes according to the present invention will be described in detail later with reference to FIGS.

[0055] 2, the nanoparticles NP can be semi-permanently coated in close proximity to the active layer 300 via the nanoholes NH. Therefore, the effect of surface plasmon resonance due to the nanoparticles NP can be maximized in the light emitting device.

[0056] The metal pad 600 may be formed to apply electricity to the unit LED structure via wiring, etc. The metal pad 600 may include a p-type metal pad 610 and an n-type metal pad 620.

[0057] For example, the p-type metal pad 610 may be electrically connected to the ohmic metal 500. For example, the n-type metal pad 620 may be electrically connected to the first conductivity type semiconductor layer 200.

[0058] FIG. 3 is an enlarged view showing nanoholes NH of a light-emitting device containing nanoholes.

[0059] Referring to FIG. 3, the nanoholes NH may be formed in a direction perpendicular to the plane where the first conductive type semiconductor layer 200, the active layer 300, and the second conductive type semiconductor layer 400 are stacked.

[0060] The cross-sectional shape of the nanoholes NH may be circular as shown in Figure 3. For example, the diameter of the nanoholes NH may be 100 nm to 5 µm.

[0061] Meanwhile, the shape of the nanoholes NH according to the embodiments of the present invention is not limited to a circular shape, and may have various shapes such as a triangle, a square, a hexagon, etc.

[0062] In one embodiment, the nanoholes NH may have a regular arrangement. A plurality of nanoholes NH may be formed in a periodically repeated manner. For example, the distance between the centers of the plurality of nanoholes NH may be 100 nm to 10 μm.

[0063] The nanohole NH may include an insulating film disposed between the nanoparticle NP and the active layer 300. The nanoparticle NP may cause surface plasmon resonance with the active layer 300 via the insulating film.

[0064] The insulating film can function to form an appropriate distance between the active layer 300 and the nanoparticles NP. For example, the insulating film can have a thickness of 1 nm to 150 nm.

[0065] In one embodiment, the insulating film may include at least one of SiO2, TiO2, ZrO2, and Al2O3.

[0066] FIG. 4 is an enlarged view showing nanoparticles NP coated on nanoholes NH, and FIG. 5 is an optical image showing an example of nanoparticles NP.

[0067] 4, the nanoparticles NP can be semi-permanently coated inside the nanoholes NH. When the nanoparticles NP are coated on the nanoholes NH, the nanoparticles NP can generate surface plasmon resonance.

[0068] Nanoparticles NP are suitable materials for utilizing the surface plasmon phenomenon, and can be made of metals that easily emit electrons in response to an external stimulus and have a negative dielectric constant.

[0069] For example, the nanoparticles NP can include at least one of palladium (Pd), aluminum (Al), silver (Ag), platinum (Pt), copper (Cu), gold (Au), chromium (Cr), rhodium (Rh), nickel (Ni), and titanium (Ti).

[0070] The nanoparticles NP may be semi-permanently coated in close proximity to the active layer 300 via the nanoholes NH formed to a depth penetrating the active layer 300 .

[0071] Specifically, the nanoparticles NP can be coated on the surface of the active layer 300 with the insulating film as a boundary so that the distance between the nanoparticles NP and the active layer 300 is 1 nm to 150 nm. That is, the nanoparticles NP can cause surface plasmon resonance with the active layer 300 with the insulating film as a boundary.

[0072] For example, the nanoparticle NP may be a core nanoparticle NP having a core structure. For example, the nanoparticle NP may be a core-shell nanoparticle NP having a core-shell structure.

[0073] The nanoparticles NP can be coated inside the nanoholes NH using at least one of a drop casting process, a spin coating process, an electrophoresis process, and a dewetting process.

[0074] In one embodiment, the unit LED structure may be a red LED that emits red light, for example, the active layer 300 may emit red light with a wavelength of 620 nm to 680 nm.

[0075] In a red LED, the nanoparticles NP may include Au having a first shape for generating surface plasmon resonance for the wavelength of red light.

[0076] In a red LED, the nanoparticles NP may be core-shell nanoparticles NP having a core-shell structure, as shown in Figure 5. For example, the nanoparticles NP may be composed of an Au core and an SiO shell.

[0077] To achieve surface plasmon resonance for red light wavelengths, the nanoparticles NP can have a first shape optimized for a red LED, such as a pointed shape, a star shape, or an angled shape.

[0078] Meanwhile, the shape of the nanoparticles NP of the present invention is not limited to Shape 1. For example, the unit LED structure of the present invention can emit green light, blue light, infrared light, etc. in addition to red light.

[0079] Therefore, the nanoparticles NP of the present invention are not limited to the first shape and can have an optimal shape for generating surface plasmon resonance with respect to the wavelength of the target light source. For example, the nanoparticles NP can have various shapes such as a sphere, a rectangular parallelepiped, a regular octahedron, etc.

[0080] FIG. 6 is a flow chart showing a method for manufacturing the light emitting device having nanoholes of FIG. 1, and FIG. 7 is a diagram showing a process for manufacturing the light emitting device having nanoholes of FIG.

[0081] 6 and 7, the light emitting device including nanoholes according to the present invention can be manufactured through the steps of forming an LED and an ohmic metal 500 (S100), performing a photolithography process (S200), forming nanoholes NH (S300), depositing a first insulating film (S400), removing the PR (S500), coating nanoparticles NP (S600), depositing a second insulating film (S700), exposing the p-ohmic metal (S800), exposing the n-GaN (S900), and forming a metal pad 600 (S1000).

[0082] In one embodiment, a method for manufacturing a light emitting device including nanoholes may include a step (S100) of forming an LED and an ohmic metal 500. The LED may include a first conductive type semiconductor layer 200, an active layer 300, and a second conductive type semiconductor layer 400.

[0083] For example, a method for manufacturing a light-emitting device may include forming a first conductive type semiconductor layer 200 on a substrate 100, forming an active layer 300 on the first conductive type semiconductor layer 200, and forming a second conductive type semiconductor layer 400 on the active layer 300.

[0084] The substrate 100 may be made of a material on which a semiconductor such as GaN can be epitaxially grown, and may include, for example, at least one of sapphire, silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), silicon (Si), gallium phosphide (GaP), indium phosphide (InP), zinc oxide (ZnO), MgAlO, MgO, LiAlO, and LiGaO.

[0085] The first conductive type semiconductor layer 200 and the second conductive type semiconductor layer 400 may be made of a nitride semiconductor. For example, the first conductive type semiconductor layer 200 and the second conductive type semiconductor layer 400 may be made of a material such as GaN, AlGaN, or InGaN.

[0086] The active layer 300 can emit light having a predetermined energy due to recombination of electrons and holes. For example, the active layer 300 may be formed with a multiple quantum well (MQW) structure in which quantum barrier layers and quantum well layers are alternately arranged.

[0087] For example, a material having a small energy band gap among GaN, AlN, InN, InGaN, AlGaN, and InAlGaN may be configured as a quantum well layer, and a material having a large energy band gap among GaN, AlN, InN, InGaN, AlGaN, and InAlGaN may be configured as a quantum barrier layer.

[0088] The method for manufacturing a light emitting device may further form an ohmic metal 500 on the second conductive type semiconductor layer 400. The ohmic metal 500 may be an electrode for applying a voltage to the second conductive type semiconductor layer 400. For example, the ohmic metal 500 may be a p-ohmic metal.

[0089] In one embodiment, the method for manufacturing a light emitting device including nanoholes may include a step (S200) of performing a photolithography process.

[0090] In a photolithography process, a mask metal can be deposited onto the ohmic metal 500 on top of the LED structure and selectively patterned.

[0091] For example, the mask metal can be patterned using electron-beam lithography, focused ion beam (FIB) lithography, nano-imprint, a mask formation method using SiO2 nanoparticles, a self-assembled metal mask, or the like.

[0092] In one embodiment, the method for manufacturing a light emitting device including nanoholes may include the step of forming nanoholes NH (S300).

[0093] The nanoholes NH may be formed in a direction perpendicular to the surface where the first conductive type semiconductor layer 200, the active layer 300, and the second conductive type semiconductor layer 400 are stacked. The nanoholes NH may be repeatedly formed in a regular array in the unit LED structure in the vertical direction.

[0094] The step of forming the nanoholes NH may use a selective etching process using a nanopatterning technique to selectively remove the unit LED structures and the ohmic metal 500. For example, the step of forming the nanoholes NH may be performed by dry etching.

[0095] Specifically, the step of forming the nanoholes NH can be performed by selective etching using reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE), chemically assisted ion beam etching (CAIBE), or the like.

[0096] For example, when using inductively coupled plasma reactive ion etching (ICP-RIE), the unit LED structure and the ohmic metal 500 can be etched by appropriately adjusting process parameters such as selectivity and etch rate.

[0097] The nanoholes NH may be formed to a depth penetrating the second conductive type semiconductor layer 400 and the active layer 300. For example, the nanoholes NH may be formed penetrating the active layer 300 and up to a portion of the first conductive type semiconductor layer 200.

[0098] In one embodiment, a method for manufacturing a light emitting device including nanoholes may include depositing a first insulating film (S400) and removing the PR (S500).

[0099] The nanoholes NH may include a first insulating film disposed between the nanoparticles NP and the active layer 300 .

[0100] The first insulating film can function to form an appropriate distance between the active layer 300 and the nanoparticles NP. For example, the first insulating film can have a thickness of 1 nm to 150 nm.

[0101] The first insulating film may include at least one of SiO2, TiO2, ZrO2, and Al2O3.

[0102] After the first insulating film is deposited, a PR removal process may be performed. For example, the PR may be removed using acetone and isopropyl alcohol (IPA). As another example, the PR may be removed by an etching process.

[0103] In one embodiment, the method for manufacturing a light emitting device including nanoholes may include the step of coating nanoparticles NP (S600).

[0104] The nanoholes NH may be coated with nanoparticles NP that generate surface plasmon resonance, and the nanoparticles NP may generate surface plasmon resonance with the active layer 300 across the first insulating film.

[0105] Nanoparticles NP are suitable materials for utilizing the surface plasmon phenomenon, and can be made of metals that easily emit electrons in response to an external stimulus and have a negative dielectric constant.

[0106] For example, the nanoparticles NP can include at least one of palladium (Pd), aluminum (Al), silver (Ag), platinum (Pt), copper (Cu), gold (Au), chromium (Cr), rhodium (Rh), nickel (Ni), and titanium (Ti).

[0107] For example, the nanoparticle NP may be a core nanoparticle NP having a core structure. For example, the nanoparticle NP may be a core-shell nanoparticle NP having a core-shell structure.

[0108] The nanoparticles NP can be coated inside the nanoholes NH using at least one of a drop casting process, a spin coating process, an electrophoresis process, and a dewetting process.

[0109] In this way, when the nanoparticles NP are coated in close proximity to the active layer 300 via the nanoholes NH, the effect of surface plasmon resonance in the light emitting device can be maximized.

[0110] In one embodiment, the method for manufacturing a light emitting device including nanoholes may include depositing a second insulating film (S700).

[0111] The second insulating film can function to protect the nanoparticles NP so that the nanoparticles NP can be semi-permanently coated inside the nanoholes NH.

[0112] The second insulating film, like the first insulating film, can contain at least one of SiO2, TiO2, ZrO2, and Al2O3.

[0113] In one embodiment, a method for manufacturing a light-emitting device including nanoholes may include a step of exposing a p-ohmic metal (S800), a step of exposing an n-GaN (S900), and a step of forming a metal pad 600 (S1000).

[0114] The step of exposing the p-ohmic metal can be performed by ashing and etching the second insulating film formed on the upper layer of the ohmic metal 500 on the second conductive type semiconductor layer 400.

[0115] The step of exposing the n-GaN can be performed by removing the second insulating film formed on the upper layer of the first conductive type semiconductor layer 200 using a photolithography process and a dry etching process, thereby exposing the n-GaN.

[0116] In the step of forming the metal pads 600, a p-type metal pad 610 and an n-type metal pad 620 may be formed so that electricity can be applied to the unit LED structure via wiring or the like.

[0117] For example, the p-type metal pad 610 may be electrically connected to the p-ohmic metal, and the n-type metal pad 620 may be electrically connected to the first conductivity type semiconductor layer 200.

[0118] FIG. 8 is a diagram showing a case where a light emitting device including nanoholes according to an embodiment of the present invention emits light from the front side.

[0119] 8, light output from the active layer 300 can pass through the ohmic metal 500. For example, the ohmic metal 500 may be made of a transparent metal. Therefore, the light emitting device including the nanoholes can emit light from the top.

[0120] In particular, in the case of a light emitting device including nanoholes, when emitting light from the top, the nanoparticles NP are continuously fixed near the active layer 300 through the nanoholes NH, so that the internal quantum efficiency can be increased.

[0121] FIG. 9 is a diagram showing a case where a light emitting device including nanoholes according to an embodiment of the present invention emits light from the back side.

[0122] 9, light output from the active layer 300 may be reflected by the ohmic metal 500. For example, the ohmic metal 500 may be made of a metal that can reflect light. Therefore, the light emitting device including the nanoholes may be back-emitting.

[0123] Similarly, in the case of a light emitting device including nanoholes, when emitting light from the backside, the internal quantum efficiency can be increased because the nanoparticles NP are continuously fixed near the active layer 300 through the nanoholes NH.

[0124] That is, the nanoparticles NP are semi-permanently coated in close proximity to the active layer 300 via the nanoholes NH, so that the effect of surface plasmon resonance can be increased in the light emitting device including the nanoholes.

[0125] Therefore, according to the light emitting device including nanoholes and the method for manufacturing the light emitting device including nanoholes according to the embodiments of the present invention, the light emitting efficiency of the light emitting device can be maximized.

[0126] Although the embodiments have been described above with reference to limited drawings, those skilled in the art will appreciate that various modifications and variations may be made from the foregoing description. For example, the techniques described may be performed in a different order than described, and / or the components of the described systems, structures, devices, circuits, etc. may be combined or combined in a different manner than described, or may be substituted or replaced by other components or equivalents, and still achieve suitable results.

[0127] Accordingly, other implementations, other embodiments, and equivalents of the claims are within the scope of the following claims.

Claims

1. a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer; and nanoholes coated with nanoparticles that generate surface plasmon resonance; 10. A light emitting device including nanoholes, wherein the nanoholes are formed to a depth penetrating the second conductive type semiconductor layer and the active layer.

2. The nanoholes are 10. The light emitting device including nanoholes according to claim 1, wherein the light emitting device is formed through the steps of: forming an ohmic metal on the second conductive type semiconductor layer; vertically etching the ohmic metal, the second conductive type semiconductor layer, and the active layer to form holes having a depth penetrating the active layer; and coating the nanoparticles inside the holes.

3. The nanoparticles are 10. The light emitting device including nanoholes according to claim 1, wherein the nanoholes are coated using at least one of a drop casting process, a spin coating process, an electrophoresis process, and a dewetting process.

4. the active layer emits red light having a wavelength of 620 nm to 680 nm; The light emitting device including nanoholes according to claim 1 , wherein the nanoparticles include Au having a first shape for generating surface plasmon resonance with respect to the wavelength of the red light.

5. The nanoparticles are The light emitting device including nanoholes according to claim 1, characterized in that the nanoholes are at least one of core nanoparticles having a core structure and core-shell nanoparticles having a core-shell structure.

6. The nanoparticles are 10. The nanohole-containing light-emitting device according to claim 1, comprising at least one of palladium (Pd), aluminum (Al), silver (Ag), platinum (Pt), copper (Cu), gold (Au), chromium (Cr), and rhodium (Rh).

7. the nanohole includes an insulating film disposed between the nanoparticle and the active layer; The nanohole-containing light-emitting device according to claim 1 , wherein the nanoparticles cause surface plasmon resonance with the active layer across the insulating film.

8. The insulating film is made of SiO ２ , TiO ２ , ZrO ２ , and Al ２ O ３ The nanohole-containing light-emitting device according to claim 7, comprising at least one of the following:

9. The nanohole-containing light emitting device according to claim 1, wherein the nanoholes have a diameter of 100 nm to 5 μm.

10. The nanohole-containing light emitting device according to claim 1, wherein the nanoholes have a center-to-center spacing of 100 nm to 10 μm.

11. forming an LED and an ohmic metal; performing a photolithography process; forming nanoholes; depositing a first insulating film; removing the photoresist (PR); coating the nanoparticles; depositing a second insulating film; exposing the p-ohmic metal; exposing the n-GaN; forming a metal pad; The LED includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; 10. A method for manufacturing a light emitting device including nanoholes, wherein the nanoholes are formed to a depth penetrating the second conductive type semiconductor layer and the active layer.

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