Semiconductor device manufacturing apparatus and inspection method

Abstract

A semiconductor device manufacturing device (10) comprises: a capillary (14) that pressure-bonds a ball (B) formed at the distal end of a wire (W) to a target surface (11) to form a pressure-bonded ball (Bb); at least one clamper (16, 18); a movement mechanism (26) that moves the capillary (14) relative to the target surface (110); and a controller (36). The controller (36) performs a load application process, in which an inspection load (Fd) is applied to the wire (W) by moving the capillary (14) in an inspection direction in a state in which at least one clamper (18) is closed after the pressure-bonded ball (Bb) has been formed, while gradually increasing the inspection load (Fd) until a peel timing at which the pressure-bonded ball (Bb) is peeled off or the like, so that the inspection load (Fd) at the peel timing is acquired as a peeling strength (Fa).

Description

[Technical Field]

[0001] The present specification discloses a semiconductor manufacturing apparatus for manufacturing a semiconductor device and an inspection method. [Background technology]

[0002] Conventionally, semiconductor devices have been known in which one or more semiconductor chips are electrically bonded to a substrate or another semiconductor chip. When manufacturing such semiconductor devices, a bonded ball bonded to a target surface, i.e., the electrode surface, may be used to electrically connect a semiconductor chip electrode to an electrode formed on the other semiconductor chip or the substrate. Specifically, a semiconductor device manufacturing apparatus melts the tip of a wire to form a metal ball (a so-called FAB (Free Air Ball)), and then presses the ball against the target surface to form a bonded ball. The semiconductor device manufacturing apparatus then connects another electrode to the bonded ball directly or via a wire, thereby electrically connecting the target surface and the other electrode.

[0003] In this case, the mechanical bond strength between the pressure-bonded ball and the target surface has a significant impact on the quality of the semiconductor device. Therefore, techniques for inspecting the bond strength between the pressure-bonded ball and the target surface have been proposed.

[0004] For example, Patent Document 1 discloses a technique in which a bonded ball (referred to as a "solder ball" in Patent Document 1) is pressed in a direction parallel to a target surface with a dedicated probe, and the force that peels the bonded ball from the target surface, i.e., the peel strength (also called "shear strength"), is measured. Patent Document 1 also discloses that the peel angle can be changed by changing the angle of the substrate on which the bonded ball is formed, thereby measuring the peel strength. The technique of Patent Document 1 makes it possible to quantitatively grasp the bonding strength of the bonded ball to the target surface. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-301813 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in conventional technologies such as Patent Document 1, a probe is used to apply a load to the compressed ball. On the other hand, typical semiconductor device manufacturing equipment is not equipped with such a probe. Therefore, in the past, when inspecting the peel strength of a compressed ball, it was necessary to form a compressed ball on a target surface using a semiconductor device manufacturing equipment, then take the sample on which the compressed ball was formed outside the semiconductor device manufacturing equipment and inspect it using a dedicated inspection device. However, taking the sample outside the semiconductor device manufacturing equipment in this way was not only time-consuming but also posed the risk of sample contamination.

[0007] Therefore, this specification discloses a semiconductor device manufacturing apparatus capable of inspecting peel strength, and an inspection method using a capillary. [Means for solving the problem]

[0008] The semiconductor device manufacturing apparatus disclosed in this specification comprises a capillary through which a wire is inserted, the capillary crimping a ball formed at the tip of the wire onto a target surface to form a crimped ball; one or more clampers that hold the wire extending upward from the capillary; a moving mechanism that moves the capillary relative to the target surface; and a controller, wherein the controller forms the crimped ball at an inspection point on the target surface, and then, with at least one of the clampers closed, moves the capillary in an inspection direction that intersects the axial direction of the capillary to apply a load to the wire, gradually increasing the inspection load until a peel timing at which the crimped ball peels off or the wire breaks, and obtains the inspection load at the peel timing as the peel strength.

[0009] In this case, the moving mechanism has a drive motor that outputs power to move the capillary, and the controller is characterized in that it determines the inspection load based on the thrust of the drive motor when moving the capillary in the inspection direction.

[0010] Furthermore, the device may further include a non-adhesion detection unit that detects non-adhesion of the wire to the target surface based on the state of current flow between the wire and the target surface, and the controller may identify the timing at which the non-adhesion detection unit detects adhesion of the wire after crimping the ball to the inspection point as the detachment timing.

[0011] Furthermore, the controller may specify, as the detachment timing, a timing at which a deviation between an actual position of the capillary and a command position when the capillary is moved in the inspection direction in the load application process suddenly decreases.

[0012] Furthermore, the wire may further include a tip state detection unit that detects the state of the tip of the wire that protrudes below the capillary, and the controller may detect the state of the tip using the tip state detection unit after the peeling timing, and if there is no tail at the tip, perform a preparatory process to form the tail.

[0013] In addition, the one or more clampers may include a first clamper that moves up and down in conjunction with the capillary, and breaks the wire by moving upward together with the capillary while holding the wire while the crimped ball and the wire are connected, and a second clamper that holds the wire at a position above the first clamper, and the controller may close at least the second clamper during the load application process.

[0014] Furthermore, the one or more clampers may include a first clamper that moves up and down in conjunction with the capillary, and breaks the wire by moving upward together with the capillary while holding the wire while the crimped ball and the wire are connected, but may not include any other clampers, and the controller may close the first clamper during the load application process.

[0015] The inspection method disclosed in this specification is characterized by comprising the steps of: crimping a ball at the tip of a wire inserted into a capillary onto an inspection point on a target surface to form a crimped ball; applying an inspection load to the wire by holding the wire extending upward from the capillary with a clamper and moving the capillary in an inspection direction that intersects with the axial direction of the capillary, wherein the inspection load is gradually increased and applied until a peel timing at which the crimped ball peels off or the wire breaks; and obtaining the inspection load at the peel timing as a peel strength. [Effects of the Invention]

[0016] According to the technology disclosed in this specification, the peel load of a compressed ball can be measured without using a dedicated measuring device. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a schematic diagram showing a configuration of a semiconductor device manufacturing apparatus. [Figure 2] FIG. 10 is a schematic diagram showing the flow of an inspection process for peeling load. [Figure 3] 10 is a flowchart showing the flow of a peeling load inspection process. [Figure 4] FIG. 10 is a schematic diagram showing the flow of preparation processing. [Figure 5] 10 is a flowchart showing the flow of preparation processing. [Figure 6] FIG. 10 is a schematic diagram showing another flow of the peeling load inspection process. [Figure 7]10 is a flowchart showing another flow of the peeling load inspection process. [Figure 8] FIG. 10 is a schematic diagram showing another flow of the preparation process. [Figure 9] FIG. 10 is a schematic diagram showing another flow of the preparation process. [Figure 10] 10 is a flowchart showing another flow of the preparation process. DETAILED DESCRIPTION OF THE INVENTION

[0018] The configuration of a semiconductor device manufacturing apparatus 10 will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing the configuration of the semiconductor device manufacturing apparatus 10. This semiconductor device manufacturing apparatus 10 is a wire bonding apparatus that mechanically and electrically connects electrodes of a semiconductor chip to electrodes of a substrate or another semiconductor chip using wires. As will be described in detail later, the semiconductor device manufacturing apparatus 10 of this example also has the function of inspecting the peel strength of balls B bonded to a target surface 110, i.e., bonded balls Bb.

[0019] In the semiconductor device manufacturing apparatus 10, a bonding target member such as a substrate 100 is placed on a stage 42. The upper surface of the bonding target member is a target surface 110 to which a wire W is bonded and a compression-bonded ball Bb is formed.

[0020] A bonding head 12 is provided above the stage 42. The bonding head 12 bonds a wire W to a target surface 110. The bonding head 12 includes a capillary 14, a first clamper 16, a second clamper 18, and a wire tensioner 20. and an air tensioner 22.

[0021] The capillary 14 is a cylindrical member attached to an ultrasonic horn (not shown). A through-hole is formed in the capillary 14, penetrating it in the axial direction, and a wire W, such as a gold wire, is inserted into this through-hole. During bonding, ultrasonic vibrations are applied to the capillary 14 via the ultrasonic horn.

[0022] The first clamper 16 and the second clamper 18 are both arranged above the capillary 14 and are members that hold the wire W. The first clamper 16 moves up and down together with the capillary 14. The second clamper 18 is provided at a position higher than the first clamper 16, and its height position within the bonding head 12 is constant.

[0023] Furthermore, an air tensioner 22 and a wire tensioner 20 are disposed above the second clamper 18. The wire tensioner 20 applies appropriate tension to the wire W by supplying air axially downward to the wire W. The air tensioner 22 applies appropriate tension to the wire W by supplying air axially downward or upward to the wire W.

[0024] The movement mechanism 26 moves the bonding head 12 in the horizontal direction and moves the capillary 14 and the first clamper 16 in the vertical direction. The movement mechanism 26 has a drive motor 28 and a current sensor 30 that detects the value of the current applied to the drive motor 28. Although only one drive motor 28 and one current sensor 30 are shown in FIG. 1, in reality, one drive motor 28 and one current sensor 30 are provided for each direction of movement. In addition, although the capillary 14 is moved in this example, the movement mechanism 26 may move a stage 42 instead of or in addition to the capillary 14.

[0025] The torch electrode 24 is connected to a high-voltage power supply (not shown) via a discharge stabilizing resistor (not shown). The torch electrode 24 generates a spark (discharge) based on a control signal from the controller 36, and the heat of the spark melts the tip of the wire W unwound from the tip of the capillary 14 to form a ball B, a so-called FAB (Free Air Ball).

[0026] The non-adhesion sensor 32 functions as a non-adhesion detection unit that detects adhesion of the tip of the wire W to the target surface 110. The non-adhesion sensor 32 forms, for example, an electrical path from the wire W to the target surface 110, applies a voltage to this electrical path, and detects adhesion or grounding of the tip of the wire W to the target surface based on a change in the value of the current flowing through the electrical path. Typically, when the tip of the wire W grounds to the target surface 110, the value of the current flowing through the electrical path increases. Note that, instead of using the non-adhesion sensor 32, non-adhesion may be determined based on a change in the deviation between the commanded position and the actual position of the capillary 14.

[0027] The tip camera 34 functions as a tip state detection unit that detects the state of the tip of the wire W that protrudes below the capillary 14. The tip camera 34 captures an image of the tip of the wire W. The controller 36 determines the state of the tip of the wire W based on the inspection image obtained by the tip camera 34. The state of the tip includes, for example, the presence or absence of a ball B and the presence or absence of a tail Tw.

[0028] The controller 36 controls the operation of each of the above-mentioned components. The controller 36 is physically a computer having a processor 38 and a memory 40. The controller 36 controls the operation of each component to execute a wire bonding process that electrically and mechanically connects two electrodes with a wire W. Since the control of a typical wire bonding process is well known, only an outline will be described here. In a typical wire bonding process, the controller 36 first activates the torch electrode 24 to melt the tip of the wire W and form a ball B (a so-called FAB). Next, the controller 36 drives the bonding head 12 to execute a first bonding process in which the ball B is bonded to a first electrode (e.g., an electrode of a semiconductor chip). The ball B that is pressure-bonded to the target surface 110 in this first bonding process is hereinafter referred to as a "pressure-bonded ball Bb."

[0029] Thereafter, the controller 36, with the wire W and the crimped ball Bb still connected, opens the first clamper 16 and the second clamper 18, moves the capillary 14 to directly above the second electrode (e.g., an electrode on a substrate), and then lowers the capillary 14 to perform second bonding, bonding the wire W to the second electrode. Finally, with the first clamper 16 open, the controller 36 raises the capillary 14 to perform tailing, then closes the first clamper 16 and raises the capillary 14 to break the wire W. During this bonding process, the controller 36 also checks the condition of the tip of the wire W, specifically, the presence or absence of a ball B or a tail Tw, based on inspection images obtained by the tip camera 34 as appropriate.

[0030] The pressure-bonded ball Bb formed in the first bonding step is pressure-bonded to the electrode of the semiconductor device, and has a significant impact on the electrical and mechanical quality of the semiconductor device. Therefore, there has been a need to quantitatively evaluate the bonding strength of the pressure-bonded ball Bb to the target surface 110.

[0031] Therefore, some have proposed a method of pressing the compressed ball Bb with a dedicated probe in a direction parallel to the target surface 110 and measuring the force required to peel the compressed ball Bb from the target surface 110 as the peel load Fa. This technique allows for quantitative evaluation of the bonding strength of the compressed ball Bb. However, the semiconductor device manufacturing apparatus 10 does not have a probe for measuring the peel load Fa. Therefore, in order to measure the peel load Fa of the compressed ball Bb, it is necessary to take a sample on which the compressed ball Bb has been formed by the semiconductor device manufacturing apparatus 10 outside the semiconductor device manufacturing apparatus 10 and set it in a dedicated measuring device. However, measuring the peel load Fa outside the semiconductor device manufacturing apparatus 10 is not only time-consuming, but also, in some cases, there is a risk of the sample being contaminated during the sample transfer process.

[0032] Therefore, in this embodiment, the semiconductor device manufacturing equipment 10 is provided with a function for measuring the peel load Fa, so that the peel load Fa can be inspected by the semiconductor device manufacturing equipment 10. This will be described in detail below.

[0033] FIG. 2 is a schematic diagram showing the flow of testing the peeling load Fa, and FIG. 3 is a flowchart showing the flow of testing.

[0034] In this example, after the compressed ball Bb is formed, the capillary 14 is moved in a predetermined inspection direction with at least one clamper closed. The inspection direction is a direction intersecting the axial direction of the capillary 14, which in this example is the horizontal direction. At this time, the controller 36 gradually increases the thrust in the inspection direction and identifies, as the peel load Fa, a value proportional to the thrust when the compressed ball Bb peels off the target surface 110 or the wire W breaks.

[0035] Specifically, with the first clamper 16 closed and the second clamper 18 open, the controller 36 brings the tip of the wire W close to the torch electrode 24 and activates the torch electrode 24 to form a ball B at the tip of the wire W (S10). Next, the bonding head 12 is moved, and the capillary 14 is moved above the inspection point P1 on the target surface 110 (S12).

[0036] Next, the controller 36 opens the first clamper 16 and lowers the capillary 14, causing the ball B to contact the inspection point P1 (S14, S16). If the non-attachment sensor 32 detects that the ball B has contacted the inspection point P1 (Yes in S16), the controller 36 closes the second clamper 18 and further lowers the capillary 14 to perform first bonding, pressing and compressing the ball B against the target surface 110 (S18). As a result, a compressed ball Bb is formed at the inspection point P1.

[0037] Once the compressed ball Bb is formed, the controller 36 drives the drive motor 28 of the moving mechanism 26 to move the capillary 14 in a predetermined inspection direction (in this example, the horizontal direction), and applies a predetermined inspection load Fd from the capillary 14 to the wire W (S20). At this time, the controller 36 also increases the inspection load Fd stepwise until the compressed ball Bb peels off from the target surface 110 or the wire W breaks (S26).

[0038] Specifically, with the second clamper 18 closed, the controller 36 moves the capillary 14 in the inspection direction and applies a predetermined inspection load Fd to the wire W (S20). Here, the inspection load Fd may be determined based on the value of the current applied to the drive motor 28. That is, the inspection load Fd is usually proportional to the thrust of the drive motor 28, and the thrust of the drive motor 28 is generally proportional to the applied current value. Therefore, the controller 36 may, for example, perform current feedback control of the drive motor 28 so that the current value detected by the current sensor 30 becomes a value proportional to the inspection load Fd. Furthermore, in step S20, since it is only necessary to apply a load to the wire W, the first clamper 16 may be closed instead of or in addition to the second clamper 18.

[0039] If the application of the inspection load Fd results in the bonded ball Bb being peeled off from the target surface 110 or the wire W being broken (Yes in step S22), the controller 36 proceeds to step S28. In this example, if the non-adhesion sensor 32 detects adhesion of the wire W after the bonded ball Bb is formed, this is determined to be the timing at which peeling or the like has occurred. Alternatively, the deviation between the commanded position and the actual position of the capillary 14 may be monitored, and the timing at which this deviation suddenly drops may be detected as the timing at which peeling or the like has occurred.

[0040] On the other hand, if separation of the compressed ball Bb or the like does not occur (No in S22), the controller 36 continues to apply the inspection load Fd until a predetermined reference time has elapsed (Yes in S24). The reference time is not particularly limited, but may be, for example, several seconds.

[0041] When the reference time has elapsed, the controller 36 updates the current inspection load Fd by adding a predetermined increase value ΔF to the new inspection load Fd (S26), and applies the updated inspection load Fd (S20). Then, the processes of steps S20 to S26 are repeated until separation of the compressed ball Bb or the like occurs.

[0042] On the other hand, if peeling or the like of the compressed ball Bb occurs (Yes in S22), the controller 36 identifies the inspection load Fd at that time as the peel load Fa (S28). The identified peel load Fa is stored in the memory 40 and is presented to the operator as necessary. The operator can quantitatively evaluate the bonding strength of the compressed ball Bb based on the presented peel load Fa.

[0043] Once the peel load Fa has been acquired, the controller 36 then performs tail extension for the next bonding (S30). Specifically, the controller 36 opens the first clamper 16 and closes the second clamper 18, and raises the capillary 14, causing the wire W to protrude a predetermined distance from the tip of the capillary 14. Finally, the controller 36 closes the first clamper 16 and opens the second clamper 18 (S32), completing the inspection process.

[0044] As is clear from the above explanation, according to this example, the peel load Fa of the press-bonded ball Bb can be inspected in the semiconductor device manufacturing apparatus 10 without having to take the sample outside the semiconductor device manufacturing apparatus 10. As a result, compared to the conventional technology in which the peel load Fa was measured using a dedicated measuring device, the effort required for measuring the peel load Fa can be reduced, and contamination of the sample can be effectively prevented.

[0045] Incidentally, when the inspection of the peel load Fa is completed, it is necessary to bring the state of the tip of the wire W into a state where the next bonding can be started. Specifically, it is necessary that a tail Tw of the wire W protrudes downward from the capillary 14 by a predetermined distance, and that there is no ball B at the tip of the wire W. Therefore, when the inspection of the peel load Fa is completed, the controller 36 images the tip of the wire W with the tip camera 34, checks the presence or absence of a ball B based on the obtained inspection image, and performs preparation processing for the next bonding process depending on the result.

[0046] FIG. 4 is a schematic diagram showing the flow of this preparation process, and FIG. 5 is a flowchart showing the flow of the preparation process. In the preparation process, as described above, first, the presence or absence of a ball B at the tip of the wire W is confirmed using the tip camera 34 (S36). If the confirmation result shows that there is no ball B at the tip of the wire W (No in S36), i.e., in the state of step S32 in FIG. 2, it can be determined that an appropriate tail Tw has been formed, and the controller 36 terminates the preparation process without performing any particular processing. On the other hand, if a ball B remains at the tip of the wire W (Yes in S36), the controller 36 discards the ball B and forms the tail Tw (S38 to S46). Specifically, the controller 36 closes the first clamper 16 and opens the second clamper 18, and moves the capillary 14 to a preliminary point P2, which is a location different from the inspection point P1. This preliminary point P2 may be set on the same sample as the inspection point P1, or may be set on a surface of a member different from the sample on which the inspection point P1 is set.

[0047] Next, the controller 36 opens the first clamper 16 and lowers the capillary 14 to bond the ball B to the spare point P2 (S40). Thereafter, the capillary 14 is raised to perform tail extension, which causes a predetermined distance of the wire W to protrude from below the capillary 14 (S42). Thereafter, the controller 36 closes the first clamper 16 (S44) and then raises the capillary 14 to break the wire W (S46). This results in a predetermined length of the wire W, i.e., a tail Tw, being pulled out from the tip of the capillary 14, allowing the next bonding process to begin smoothly.

[0048] Incidentally, up to this point, the description has been given taking as an example a semiconductor device manufacturing apparatus 10 having both the first clamper 16 and the second clamper 18, but some semiconductor device manufacturing apparatuses 10 have only the first clamper 16 and do not have the second clamper 18. In the case of such semiconductor device manufacturing apparatuses 10, after the pressure-bonded ball Bb is formed, the capillary 14 is moved in the inspection direction with the first clamper 16 closed, thereby applying the inspection load Fd to the wire W.

[0049] 6 and 7 are a schematic diagram and a flowchart showing the flow of the peel load Fa inspection process in a semiconductor device manufacturing apparatus 10 having only the first clamper 16. As shown in FIGS. 6 and 7, in the case of a semiconductor device manufacturing apparatus 10 having only the first clamper 16, when applying the inspection load Fd to the wire W (S60), the first clamper 16 is closed, not the second clamper 18. Also, in the case of a semiconductor device manufacturing apparatus 10 having only the first clamper 16, after peeling of the compressed ball Bb or the like occurs (Yes in S62), the capillary 14 is raised (S70) without tailing, and the process ends. In this way, even in a semiconductor device manufacturing apparatus 10 having only one clamper for holding the wire W, by closing that one clamper (i.e., the first clamper 16) and moving the capillary 14 in the inspection direction, a load in the inspection direction can be applied to the wire W, and the peel load Fa can be determined.

[0050] Once the peel load Fa can be identified, a preparatory process for the next bonding process is performed. FIGS. 8 and 9 are schematic diagrams showing the flow of this preparatory process, and FIG. 10 is a flowchart showing the flow of the preparatory process. This preparatory process differs significantly depending on whether or not a ball B is present at the tip of the wire W. If a ball B is present (Yes in S72), the controller 36 executes steps S74 to S82 shown in FIG. 8. Specifically, the controller 36 moves the capillary 14 to above the preliminary point P2 while keeping the first clamper 16 closed (S74). Next, the controller 36 opens the first clamper 16 and bonds the ball B to the preliminary point P2 (S76). Next, the controller 36 raises the capillary 14 while keeping the first clamper 16 open, thereby performing tailing (S78). When the wire W protrudes below the capillary 14 by a sufficient distance, the controller 36 closes the first clamper 16 (S80), and then raises the capillary 14 to break the wire W (S82).

[0051] On the other hand, if there is no ball B at the tip of the wire W, the controller 36 executes steps S84 to S88 and steps S78 to S82 shown in FIG. 9. Specifically, the controller 36 moves the capillary 14 above the spare point P2 while keeping the first clamper 16 closed (S84). Next, the controller 36 bonds the wire W to the spare point P2 while keeping the first clamper 16 closed (S86), and then opens the first clamper 16 (S88). The process after opening the first clamper 16 is the same as when there is a ball B. That is, the capillary 14 is raised to extend the tail (S78), and then the first clamper 16 is closed to break the wire W (S80, S82). By performing these preparatory processes, even in a semiconductor device manufacturing apparatus 10 with only one clamper, it is possible to properly form the tail Tw and properly start the next bonding process.

[0052] The configuration described above is merely an example. After forming the crimped ball Bb, the capillary 14 is moved in the inspection direction with at least one clamper closed to apply the inspection load Fd to the wire W. The load application process is performed by gradually increasing the inspection load Fd until peeling or the like occurs, and the inspection load Fd at the peeling timing is identified as the peel load Fa. Other configurations may be modified as appropriate. For example, in the above example, the inspection direction (i.e., the direction of the inspection load Fd) is horizontal, but the inspection direction is not limited to horizontal and may be any other direction intersecting the axis of the capillary. Furthermore, in this example, the inspection load Fd is increased in stages. However, the inspection load Fd may be increased continuously as long as it increases gradually. [Explanation of symbols]

[0053] 10 semiconductor device manufacturing equipment, 12 bonding head, 14 capillary, 16 first clamper, 18 second clamper, 20 wire tensioner, 22 air tensioner, 24 torch electrode, 26 moving mechanism, 28 drive motor, 30 current sensor, 32 non-adhesion sensor, 34 tip camera, 36 controller, 38 processor, 40 memory, 42 stage, 100 substrate, 110 target surface, B ball, Bb crimped ball, P1 inspection point, P2 spare point, W wire.

Claims

1. a capillary through which a wire is inserted, the capillary forming a ball at the tip of the wire by pressing the ball against a target surface; one or more clampers for holding the wire extending upward from the capillary; a moving mechanism that moves the capillary relative to the target surface; A controller; The controller forms the crimped ball at the inspection point on the target surface, and then, with at least one of the clampers closed, moves the capillary in an inspection direction that intersects with the axial direction of the capillary to apply an inspection load to the wire. The load application process is performed while gradually increasing the inspection load until a peel timing at which the crimped ball peels off or the wire breaks, and the inspection load at the peel timing is obtained as a peel strength. A semiconductor device manufacturing apparatus characterized by:

2. 2. The semiconductor device manufacturing apparatus according to claim 1, the moving mechanism has a drive motor that outputs power for moving the capillary, the controller specifies the inspection load based on the thrust of the drive motor when moving the capillary in the inspection direction. A semiconductor device manufacturing apparatus characterized by:

3. 3. The semiconductor device manufacturing apparatus according to claim 1, further comprising: a non-attachment detection unit that detects non-attachment of the wire to the target surface based on a current flow state between the wire and the target surface, the controller specifies, as the peeling timing, a timing at which the non-adhesion detection unit detects adhesion of the wire after the ball is pressure-bonded to the inspection point; A semiconductor device manufacturing apparatus characterized by:

4. 3. The semiconductor device manufacturing apparatus according to claim 1, the controller identifies, as the peel timing, the timing at which a deviation between an actual position of the capillary and a command position when the capillary is moved in the inspection direction during the load application process.

5. 5. The semiconductor device manufacturing apparatus according to claim 1, further comprising: a tip state detection unit that detects the state of a tip of the wire that protrudes below the capillary; the controller detects the state of the tip portion by the tip state detection unit after the peeling timing, and if there is no tail at the tip portion, executes a preparation process for forming the tail. A semiconductor device manufacturing apparatus characterized by:

6. 6. The semiconductor device manufacturing apparatus according to claim 1, The one or more clampers include: a first clamper that moves up and down in conjunction with the capillary, and breaks the wire by moving upward together with the capillary while holding the wire in a state in which the crimping ball and the wire are connected; a second clamper that holds the wire at a position above the first clamper; It contains The controller closes at least the second clamper during the load application process. A semiconductor device manufacturing apparatus characterized by:

7. 6. The semiconductor device manufacturing apparatus according to claim 1, The one or more clampers include a first clamper that moves up and down in conjunction with the capillary, and breaks the wire by moving upward together with the capillary while holding the wire in a state where the crimped ball and the wire are connected, but does not include any other clampers, the controller closes the first clamper during the load application process. A semiconductor device manufacturing apparatus characterized by:

8. a step of crimping a ball at the tip of the wire inserted into the capillary onto an inspection point on the target surface to form a crimped ball; A step of applying an inspection load to the wire by moving the capillary in an inspection direction that is a direction intersecting an axial direction of the capillary while holding the wire extending upward from the capillary with a clamper, wherein the inspection load is gradually increased and applied until a peeling timing at which the crimped ball peels off or the wire breaks; acquiring the inspection load at the peel timing as a peel strength; An inspection method comprising:

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