Solid-state imaging device, driving method for solid-state imaging device, and electronic device

Abstract

To provide a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, which are capable of reducing memory circuits of a column reading system, so that the column reading system can achieve a reduced layout area and eventually a reduced size.SOLUTION: A column reading circuit 40 includes an AD converting unit 432 and a calculating unit 430. The AD converting unit is configured to convert a read-out reset signal VRST11 and a read-out signal VSIG11 of a pixel signal Pixout read out to a vertical signal line LSGN from an analog signal into an n-bit digital pixel signal ADC[n] (RST ADC[n] and SIG ADC[n]). The calculating unit includes an n-bit asynchronous counter 431 including a retention circuit with a control logic function, which is configured to obtain a difference between an n-bit read-out reset signal and an n-bit read-out signal produced by the AD conversion performed by the AD converting part 432.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic device. [Background technology]

[0002] 2. Description of the Related Art CMOS (Complementary Metal Oxide Semiconductor) image sensors are in practical use as solid-state imaging devices (image sensors) that use photoelectric conversion elements that detect light and generate electric charges. CMOS image sensors are widely used as part of various electronic devices such as digital cameras, video cameras, surveillance cameras, medical endoscopes, personal computers (PCs), and portable terminal devices (mobile devices) such as mobile phones.

[0003] CMOS image sensors have a photodiode (photoelectric conversion element) and a floating diffusion (FD) amplifier with a floating diffusion layer for each pixel, and the mainstream readout method is a column-parallel output type that selects a row in the pixel array and reads out the pixels simultaneously in the column direction.

[0004] Incidentally, an example of the pixel configuration of a CMOS image sensor is a four-transistor (4Tr) pixel having, for example, one photodiode (photoelectric conversion element), one transfer transistor as a transfer element, one reset transistor as a reset element, one source follower transistor as a source follower element, and one selection transistor as a selection element.

[0005] The transfer transistor is selected by a control signal TG during a predetermined transfer period to be in a conductive state, and transfers the charges (electrons) photoelectrically converted and accumulated in the photodiode to the floating diffusion FD. The reset transistor is selected by a control signal RST during a predetermined reset period to be in a conductive state, and resets the floating diffusion FD to the potential of the power supply line. The selection transistor is selected and turned on during read scanning, which causes the source follower transistor to convert the charge in the floating diffusion FD into a voltage signal and output the column output read signal Pixout to the vertical signal line LSGN.

[0006] For example, during a read scan period, after the floating diffusion FD is reset to, for example, the potential of the power supply line during the reset period, the charge of the floating diffusion FD is converted into a voltage signal by a source follower transistor and output to the vertical signal line LSGN as a read reset signal (voltage) VRST. Subsequently, during a predetermined transfer period, the charges (electrons) photoelectrically converted and accumulated in the photodiode are transferred to the floating diffusion FD. The source follower transistor then converts the charges in the floating diffusion FD into a voltage signal, which is output to the vertical signal line LSGN as a readout signal (voltage) VSIG. The output signal of the pixel is processed as a differential signal (VSIG-VRST).

[0007] FIG. 1 is a diagram showing an example of a schematic configuration of a column readout system in a CMOS image sensor. 2A to 2E are timing charts for explaining an outline of the column readout operation of the column readout circuit of FIG.

[0008] In the column readout system 1 of FIG. 1, a pixel signal Pixout read out from a pixel array 2 is output to a vertical signal line LSGN and taken into a column readout circuit 3 via an AD conversion sample-and-hold switch SW-SH. In the column readout circuit 3, the readout reset signal (voltage) VRST is converted into an N-bit digital signal by the AD conversion unit 4, and is stored in the reset memory 5 via the switch SW-RS. Next, in the column readout circuit 3, the readout signal (voltage) VSIG is converted into an N-bit digital signal by the AD conversion unit 4, and is stored in the signal memory 6 via the switch SW-RS. Then, in the calculation unit 7, the information stored in the reset memory 5 and the signal memory 6 is used to obtain a differential signal (VSIG-VRST).

[0009] In a CMOS image sensor, as shown in FIG. 1, brightness information is represented by a difference ΔV1 between the black level LB1 of the readout reset signal VRST of the pixel signal Pixout and the signal level LS of the readout signal VSIG.

[0010] In a CMOS image sensor, the black level LB1 and the signal level LS appear with a time difference in the pixel output (Pixout), and the black level LB1 and the signal level LS are each AD converted. In FIG. 2, the black level LB1 is converted into a digital black level signal RST ADC, and the signal level LS is converted into a digital signal SIG ADC. In order to obtain the difference between the two pieces of data that appear with a time difference, the output data of the AD conversion unit 4 must be stored in memories 5 and 6 once. [Prior art documents] [Patent documents]

[0011] [Patent Document 1] Japanese Patent Application Laid-Open No. 2019-62398 Summary of the Invention [Problem to be solved by the invention]

[0012] However, in the above-mentioned CMOS image sensor, the AD conversion unit and memory circuit are constrained by the pixel width and are therefore narrow, so the circuits are stacked vertically. Therefore, since the reset (RST) circuit section, signal (SIG) circuit section, and two stages of memory are stacked vertically, the layout area becomes large, and the overall chip area also becomes large, which is disadvantageous in terms of cost. Furthermore, to increase the speed of a CMOS image sensor, it is configured to access two rows simultaneously in parallel. In this case, as shown in Figure 3, the readout circuits are placed above and below the pixel array, sandwiching it between them, doubling the total area of ​​the readout circuits.

[0013] The present invention aims to provide a solid-state imaging device, a method for driving a solid-state imaging device, and electronic equipment that can reduce the memory circuitry of the column readout system, thereby reducing the layout area of ​​the column readout system and ultimately achieving miniaturization. [Means for solving the problem]

[0014] A solid-state imaging device according to a first aspect of the present invention comprises a pixel section in which pixels that perform photoelectric conversion are arranged in a matrix, and a readout circuit having an analog-to-digital (AD) conversion function that converts pixel signals read out from the pixels as voltage signals onto signal lines from analog signals to digital pixel signals, the pixel signals read out from the pixels including a readout reset signal and a readout signal that are sequentially read out from the pixels, the readout circuit comprising an AD conversion section that converts the readout reset signal and the readout signal of the pixel signals read out onto the signal lines from analog signals to n-bit digital pixel signals, and an AD conversion section that converts the n-bit readout reset signal AD-converted by the AD conversion section and the n-bit digital pixel signals. and an arithmetic unit including an n-bit asynchronous counter equipped with a holding circuit with a control logic function that obtains a difference between read signals of bits, wherein the arithmetic unit sets the asynchronous counter to an inactive state, and takes in each bit output of the n-bit read reset signal AD converted by the AD conversion unit in synchronization with the read signal and holds it in the holding circuit, and then sets the asynchronous counter to an active state, and takes in each bit output of the n-bit read signal AD converted by the AD conversion unit in synchronization with the read signal, and adds it to the read reset signal held in the holding circuit to perform a count operation, thereby performing arithmetic processing of the negative read reset signal and the positive read signal.

[0015] A second aspect of the present invention relates to a method for driving a solid-state imaging device comprising: a pixel section in which pixels that perform photoelectric conversion are arranged in a matrix; and a readout circuit having an analog-to-digital (AD) conversion function that converts pixel signals read out from the pixels as voltage signals onto signal lines from analog signals to digital pixel signals, wherein the readout circuit comprises an AD conversion section that converts the readout reset signal and the readout signal of the pixel signals read out onto the signal lines from analog signals into n-bit digital pixel signals; and a calculation section that includes an n-bit asynchronous counter equipped with a holding circuit with a control logic function that obtains a difference between the n-bit readout reset signal and the n-bit readout signal AD converted by the AD conversion section. The pixel signals read out from the pixels include a readout reset signal and a readout signal that are read out in sequence from the pixels, and in the calculation unit, the asynchronous counter is set to an inactive state, and each bit output of the n-bit readout reset signal that has been AD converted by the AD conversion unit is captured in synchronization with the readout signal and held in the holding circuit, and then the asynchronous counter is set to an active state, and each bit output of the n-bit readout signal that has been AD converted by the AD conversion unit is captured in synchronization with the readout signal and added to the readout reset signal held in the holding circuit to perform a counting operation, and calculation processing is performed on the negative readout reset signal and the positive readout signal.

[0016] An electronic device according to a third aspect of the present invention comprises a solid-state imaging device and an optical system for forming an image of a subject on the solid-state imaging device, the solid-state imaging device comprising a pixel section in which pixels for performing photoelectric conversion are arranged in a matrix, and a readout circuit having an analog-to-digital (AD) conversion function for converting pixel signals read out as voltage signals from the pixels to signal lines from analog signals to digital pixel signals, the pixel signals read out from the pixels including a readout reset signal and a readout signal which are read out in order from the pixels, the readout circuit comprising an AD conversion section for converting the readout reset signal and the readout signal of the pixel signals read out to the signal lines from analog signals to n-bit digital pixel signals, and a digital pixel signal obtained by the AD conversion section. and an arithmetic unit including an n-bit asynchronous counter equipped with a holding circuit with a control logic function that obtains the difference between the n-bit read reset signal and the n-bit read signal, wherein the arithmetic unit sets the asynchronous counter to an inactive state, and takes in each bit output of the n-bit read reset signal AD converted by the AD conversion unit in synchronization with the read signal and holds it in the holding circuit, and then sets the asynchronous counter to an active state, and takes in each bit output of the n-bit read signal AD converted by the AD conversion unit in synchronization with the read signal, and adds it to the read reset signal held in the holding circuit to perform a count operation, thereby performing arithmetic processing of the negative read reset signal and the positive read signal. [Effects of the Invention]

[0017] According to the present invention, the memory circuits of the column readout system can be reduced, which reduces the layout area of ​​the column readout system, thereby enabling miniaturization. [Brief explanation of the drawings]

[0018] [Figure 1] FIG. 1 is a diagram illustrating an example of a schematic configuration of a column readout system in a CMOS image sensor. [Figure 2] 2 is a timing chart for explaining an outline of a column readout operation of the column readout circuit of FIG. 1; [Figure 3] 10A and 10B are diagrams for explaining the influence on the layout area when pixel readout directions are two directions, up and down, in a conventional column readout system. [Figure 4] 1 is a block diagram showing an example of the configuration of a solid-state imaging device according to a first embodiment of the present invention. [Figure 5] 1 is a circuit diagram illustrating an example of a pixel according to a first embodiment of the present invention. [Figure 6] FIG. 4 is a diagram showing the operation timing of shutter scan and read scan during normal pixel read operation in the first embodiment of the present invention. [Figure 7] FIG. 1 is a diagram illustrating an example of a basic configuration of a column readout system according to a first embodiment of the present invention. [Figure 8] 8 is a timing chart for explaining an outline of processing of the column readout system in FIG. 7; [Figure 9] 10 is a diagram showing a configuration example in which a signal inversion unit that inverts a reset signal is arranged on the output stage side of an AD conversion unit in the column readout circuit according to the first embodiment of the present invention. FIG. [Figure 10] 10 is a timing chart for explaining an outline of the operation of the column readout circuit of FIG. 9. [Figure 11] 1 is a block diagram showing an example of the overall configuration of an n-bit asynchronous counter including a holding circuit with a control logic function of an arithmetic unit according to a first embodiment of the present invention; [Figure 12] 12 is a timing chart for explaining a read process of a digital pixel signal ADC in each asynchronous counter module of FIG. 11. [Figure 13] 3 is a circuit diagram showing a specific example of the configuration of a logic circuit in an asynchronous counter module per counter stage according to the first embodiment of the present invention. FIG. [Figure 14] 10 is a timing chart showing an example of operation in the asynchronous counter module according to the first embodiment of the present invention in the case of a read pattern PTN2 in which the signal output signal and the carry output signal are inverted. [Figure 15]10 is a timing chart showing an example of operation in the asynchronous counter module according to the first embodiment of the present invention in the case of a read pattern PTN4 in which the output signal and the carry output signal are inverted. [Figure 16] 4 is a timing chart showing an example of operation when a count-up operation is performed in the asynchronous counter module according to the first embodiment of the present invention. [Figure 17] 1 is a block diagram showing an example of the configuration of a 2-bit asynchronous counter in a calculation unit according to a first embodiment of the present invention; [Figure 18] 18 is a timing chart for explaining a read process of a digital pixel signal ADC in each asynchronous counter module of FIG. 17. [Figure 19] FIG. 10 is a diagram illustrating an example of a basic configuration of a column readout system according to a second embodiment of the present invention. [Figure 20] 10A and 10B are diagrams for explaining a readout method in a column readout system of a solid-state imaging device according to a second embodiment of the present invention. [Figure 21] 10 is a diagram for explaining a method of dividing a digitized signal by the number of samplings when a readout reset signal and a readout signal read out from a pixel are sampled multiple times. FIG. [Figure 22] 1 is a diagram illustrating an example of a configuration of an electronic device to which a solid-state imaging device according to an embodiment of the present invention is applied. DETAILED DESCRIPTION OF THE INVENTION

[0019] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0020] (First embodiment) FIG. 4 is a block diagram showing an example of the configuration of the solid-state imaging device according to the first embodiment of the present invention. In this embodiment, the solid-state imaging device 10 is configured by, for example, a CMOS image sensor.

[0021] As shown in FIG. 4, this solid-state imaging device 10 has, as its main components, a pixel section 20 as an imaging section, a vertical scanning circuit (row scanning circuit) 30, a readout circuit (column readout circuit) 40, a horizontal scanning circuit (column scanning circuit) 50, and a timing control circuit 60. Of these components, for example, the vertical scanning circuit 30, the column readout circuit 40, and the timing control circuit 60 constitute a pixel signal readout unit 70.

[0022] In this first embodiment, the column readout circuit 40 of the solid-state imaging device 10 has an analog-to-digital (AD) conversion function that converts pixel signals read out as voltage signals from pixels that perform photoelectric conversion in the pixel section 20 to vertical signal lines from analog signals to digital pixel signals, as will be described in detail later. In the first embodiment, the pixel signals read out from the pixels include a read reset signal VRST11 and a read signal VSIG11 that are read out in order from the pixels. The column readout circuit 40 has an AD conversion unit that converts the readout reset signal VRST11 and readout signal VSIG11 of the pixel signal Pixout read out to the vertical signal line LSGN from analog signals into n-bit digital pixel signals ADC[n] (RST ADC[n] and SIG ADC[n]), and an arithmetic unit that includes an n-bit asynchronous counter equipped with a holding circuit with a control logic function that obtains the difference between the n-bit readout reset signal AD-converted by the AD conversion unit and the n-bit readout signal.

[0023] In this first embodiment, the calculation unit puts the asynchronous counter into a non-operating state, and captures each bit output of the n-bit read reset signal RSTADC[n] AD converted by the AD conversion unit in synchronization with the read signal and holds it in the holding circuit. Next, the calculation unit sets the asynchronous counter to an operating state, synchronizes with the read signal and takes in each bit output of the n-bit read signal SIGADC[n] AD converted by the AD conversion unit, adds it to the read reset signal RSTADC[n] held in the holding circuit, and performs counting operation, thereby performing calculation processing (SIG-RST) of the negative read reset signal and the positive read signal.

[0024] In this calculation process, if the output of the AD conversion unit is added as is, the value will be (RST+SIG). Therefore, in the first embodiment, the column readout circuit includes a signal inversion unit that inverts the output of the readout reset signal RSTADC to obtain (SIG-RST) and the AD converted n-bit readout reset signal RSTADC, located downstream of the output unit of the AD conversion unit and upstream of the input unit of the holding circuit, to obtain -RST ADC.

[0025] In this first embodiment, the readout unit 70 is configured to be able to perform, during one readout scan period, a first readout in which a readout reset signal VRST11 (reset voltage Vrst) is read out during a first readout period following a reset period, and a second readout in which a readout signal VSIG11 (signal voltage Vsig) corresponding to the accumulated charge of the photoelectric conversion element is read out during a second readout period following a transfer period that is performed after the first readout period following the reset period.

[0026] In a normal pixel readout operation, shutter scanning is performed by driving the readout unit 70, and then readout scanning is performed, but the first readout and second readout are performed during the readout scanning period.

[0027] Below, an overview of the configuration and function of each part of the solid-state imaging device 10 will be explained, followed by a detailed description of the configuration of the column readout system circuitry and the associated readout processing.

[0028] (Configuration of pixel section 20 and pixel PXL) The pixel section 20 has a plurality of pixels, each including a photodiode (photoelectric conversion element) and an in-pixel amplifier, arranged in a two-dimensional matrix of X rows and Y columns.

[0029] FIG. 5 is a circuit diagram showing an example of a pixel according to the first embodiment of the present invention.

[0030] This pixel PXL has, for example, a photodiode (PD) which is a photoelectric conversion element. For this photodiode PD, there is provided one transfer transistor TG-Tr as a transfer element, one reset transistor RST-Tr as a reset element, one source follower transistor SF-Tr as a source follower element, and one selection transistor SEL-Tr as a selection element.

[0031] The photodiode PD generates and accumulates signal charges (electrons in this case) in an amount corresponding to the amount of incident light. In the following, the case where the signal charges are electrons and each transistor is an n-type transistor will be described, but the signal charges may be holes and each transistor may be a p-type transistor. Furthermore, the first embodiment is also effective when a plurality of photodiodes share each transistor, or when a three-transistor (3Tr) pixel that does not have a selection transistor is used.

[0032] The transfer transistor TG-Tr is connected between the photodiode PD and a floating diffusion FD (Floating Diffusion), and is controlled by a control signal TG applied to the gate via a control line. The transfer transistor TG-Tr is selected and turned on when the control signal is at high level (H), and transfers the charges (electrons) photoelectrically converted and accumulated in the photodiode PD to the floating diffusion FD.

[0033] The reset transistor RST-Tr is connected between the power supply line VRst and the floating diffusion FD, and is controlled by a control signal RST applied to the gate via a control line. The reset transistor RST-Tr may be connected between the power supply line Vdd of the power supply voltage VDD and the floating diffusion FD, and may be configured to be controlled by a control signal RST applied to the gate via a control line. The reset transistor RST-Tr is selected and turned on while the control signal RST is at H level, resetting the floating diffusion FD to the potential of the power supply line VRst (or the power supply line Vdd of the power supply voltage VDD).

[0034] The source follower transistor SF-Tr and the selection transistor SEL-Tr are connected in series between the power supply line Vdd of the power supply voltage VDD and the vertical signal line LSGN11. A floating diffusion FD is connected to the gate of the source follower transistor SF-Tr, and the selection transistor SEL-Tr is controlled by a control signal SEL applied to the gate via a control line. The selection transistor SEL-Tr is selected and turned on when the control signal SEL is at H level, which causes the source follower transistor SF-Tr to output the column output readout voltage (signal) VSL (PIXOUT), which is a voltage signal converted from the charge of the floating diffusion FD, to the vertical signal line LSGN11. These operations are performed simultaneously in parallel for each pixel in one row, since the gates of the transfer transistor TG-Tr, reset transistor RST-Tr, and selection transistor SEL-Tr are connected in row units.

[0035] In the pixel section 20, the pixels PXL are arranged in X rows and Y columns, so there are N control lines for each of the control signals SEL, RST, and TG, and M vertical signal lines LSGN11. In FIG. 4, the control lines for the control signals SEL, RST, and TG are shown as one row scanning control line.

[0036] The vertical scanning circuit 30 drives pixels in the shutter row and the readout row through row scanning control lines under the control of the timing control circuit 60 . Furthermore, the vertical scanning circuit 30 outputs, in accordance with the address signal, a row selection signal of a read row for reading out a signal and a row address of a shutter row for resetting the charge accumulated in the photodiode PD.

[0037] As described above, in a normal pixel readout operation, the readout section 70 is driven by the vertical scanning circuit 30 to perform shutter scanning, and then readout scanning is performed.

[0038] FIG. 6 is a diagram showing the operation timing of shutter scan and read scan during normal pixel read operation in the first embodiment of the present invention.

[0039] The control signal SEL, which controls whether the select transistor SEL-Tr is on (conductive) or off (non-conductive), is set to a low level (L) during the shutter scan period PSHT, so that the select transistor SEL-Tr is kept in a non-conductive state, and is set to an H level during the read scan period PRDO, so that the select transistor SEL-Tr is kept in a conductive state. During the shutter scan period PSHT, the control signal TG is set to high level (H) for a predetermined period while the control signal RST is at high level (H), and the photodiode PD and floating diffusion FD are reset through the reset transistor RST-Tr and the transfer transistor TG-Tr.

[0040] During the read scan period PRDO, the control line RST is set to a high level (H) and the floating diffusion FD is reset through the reset transistor RST-Tr, and during the first read period PRD1 after this reset period PR, a pixel read signal VRST11 (reset voltage Vrst) in the reset state is read out. After the readout period PRD1, the control signal TG is set to high level (H) for a predetermined period, and the accumulated charge in the photodiode PD is transferred to the floating diffusion FD through the transfer transistor TG-Tr, and a pixel readout signal VSIG11 (signal voltage Vsig) corresponding to the accumulated electrons (charges) is read out during the second readout period PRD2 after this transfer period PT.

[0041] In the normal pixel readout operation of the first embodiment, the accumulation period (exposure period) EXP is the period from when the photodiode PD and floating diffusion FD are reset and the control signal TG is switched to the L level during the shutter scan period PSHT until when the control signal TG is switched to the L level to end the transfer period PT of the readout scan period PRDO, as shown in FIG. 6.

[0042] The column readout circuit 40 may include a plurality of column signal processing circuits (not shown) arranged corresponding to each column output of the pixel section 20, and may be configured to enable column-parallel processing by the plurality of column signal processing circuits.

[0043] The column readout circuit 40 can be configured to include a correlated double sampling (CDS) circuit, an ADC (analog-to-digital converter), an amplifier (AMP), and the like. The configuration and function of the column readout circuit 40 will be described in detail later.

[0044] The horizontal scanning circuit 50 scans and transfers signals processed by a plurality of column signal processing circuits such as ADCs of the column readout circuit 40 in the horizontal direction, and outputs them to a signal processing circuit (not shown).

[0045] The timing control circuit 60 generates timing signals necessary for signal processing in the pixel section 20, the vertical scanning circuit 30, the column readout circuit 40, the horizontal scanning circuit 50, and the like.

[0046] The column readout circuit 40 of the first embodiment has an AD conversion unit that converts the readout reset signal VRST11 and readout signal VSIG11 of the pixel signal Pixout read out to the vertical signal line LSGN11 from analog signals to n-bit digital pixel signals ADC[n] (RST ADC[n] and SIG ADC[n]), and an arithmetic unit that includes an n-bit asynchronous counter equipped with a holding circuit with a control logic function that obtains the difference between the n-bit readout reset signal AD-converted by the AD conversion unit and the n-bit readout signal.

[0047] (Specific Configuration Example of Column Readout Circuit 40) A specific example of the configuration of the column readout circuit 40 of the first embodiment will be described below, focusing on the configuration of the calculation unit. FIG. 7 is a diagram showing an example of the basic configuration of a column readout system according to the first embodiment of the present invention.

[0048] The column readout circuit 40 in FIG. 7 includes an AD conversion sample-hold switch 410 (SW-SH), an AD conversion unit 420, and an arithmetic unit 430.

[0049] 8A to 8F are timing charts for explaining the outline of the processing of the column readout system in FIG. Figure 8(A) shows the control signal RST of the reset transistor RST-Tr, Figure 8(B) shows the control signal TG of the transfer transistor TG-Tr, Figure 8(C) shows the read level of the pixel signal Pixout, Figure 8(D) shows the control signal adc_S / H of the AD conversion sample and hold switch 410, Figure 8(E) shows the output signal (output data) adc_out of the AD conversion unit 420, and Figure 8(F) shows the output signal (output data) cds_logic_out of the calculation unit 430.

[0050] As shown in Figures 8(A) to (D), the switch 410 sequentially takes in the read reset signal VRST11 and read signal VSIG11 of the pixel signal Pixout read out from the pixel PXL of the pixel unit 20 to the vertical signal line LSGN11 into the AD conversion unit 420 in accordance with the control signal adc_S / H.

[0051] As shown in FIG. 8(E), the AD conversion unit 420 converts the read reset signal VRST11 and read signal VSIG11 of the pixel signal Pixout, which is read out from the pixel PXL to the vertical signal line LSGN11 and taken in through the switch 410, from analog signals to n-bit digital pixel signals ADC[n] (RST ADC[n] and SIG ADC[n]), and outputs the AD-converted n-bit digital pixel signals ADC[n] (RST ADC[n] and SIG ADC[n]) to the calculation unit 430.

[0052] The calculation unit 430 includes an n-bit asynchronous counter 431 equipped with a holding circuit with a control logic function that obtains the difference between the n-bit readout reset signal AD converted by the AD conversion unit 420 and the n-bit readout signal, i.e., the difference (SIG ADC[n] - RST ADC[n]) between the digital readout reset signal RST ADC[n], which is the AD converted n-bit digital pixel signal ADC[n], and the digital readout signal SIG ADC[n]. The calculation unit 430 is configured to combine an asynchronous counter 431 and a calculation circuit 432, and to obtain differential (SIG-RST) data through the cooperation of both.

[0053] That is, in the calculation unit 430, in cooperation with the asynchronous counter 431 and the calculation circuit 432, first puts the asynchronous counter 431 into an inactive state, and then captures each bit output of the n-bit read reset signal RSTADC[n] AD converted by the AD conversion unit 420 in synchronization with the read signal clk and holds it in a holding circuit. Next, the calculation unit 430 sets the asynchronous counter 431 to an operating state, and counts by taking in each bit output of the n-bit read signal SIGADC[n] AD converted by the AD conversion unit 420 in synchronization with the read signal clk and adding it to the read reset signal RSTADC[n] held in the holding circuit, and performs calculation processing (SIG-RST) of the negative read reset signal and the positive read signal, as shown in Figure 8(F).

[0054] FIG. 9 is a diagram showing a configuration example in which a signal inversion unit that inverts a reset signal is arranged on the output stage side of an AD conversion unit in the column readout circuit according to the first embodiment of the present invention. 10A to 10C are timing charts for explaining the outline of the operation of the column readout circuit of FIG. Figure 10(A) shows the output signal (output data) ADCout of the AD conversion unit 420, Figure 10(B) shows the control signal cont of the signal inversion unit 440, and Figure 10(C) shows the input signal (input data) CDS_logic_in of the calculation unit 430.

[0055] In the above-described calculation process in the calculation unit 430, if the output of the AD conversion unit 420 is added as is, the value becomes (RST+SIG). Therefore, in the first embodiment, the column readout circuit 400 inverts the output of the readout reset signal RSTADC to obtain (SIG-RST) and a signal inversion unit 440 is arranged after the output unit of the AD conversion unit 420 and before the input unit of the holding circuit to invert the AD converted n-bit readout reset signal RSTADC to obtain -RST ADC.

[0056] In the example of FIG. 9, a signal inverting section 440 is arranged on the output side of the AD converting section 420 . In this example, the signal inverter 440 inverts the AD converted n-bit read reset signal RSTADC when the control signal cont is supplied at an active high level. The signal inverting unit 440 multiplies the n-bit read reset signal RSTADC output by the AD converting unit 420 by (-1) (-1*RST ADC) and inverts the result.

[0057] (Specific Configuration and Function of Calculation Unit 430) Here, a more specific configuration and function of the calculation unit 430 according to the first embodiment will be described. FIG. 11 is a block diagram showing an example of the overall configuration of an n-bit asynchronous counter 431 having a holding circuit with a control logic function of the arithmetic unit according to the first embodiment of the present invention. 12A and 12B are timing charts for explaining the process of reading the digital pixel signal ADC in each asynchronous counter module of FIG. Figure 12(A) shows the n-bit wide digital pixel signals ADC[n-1] to ADC[0] supplied to each asynchronous counter module CMJ[n-1] to CMJ[0], and Figure 12(B) shows the read signals clk[n-1] to clk[0] for reading the digital pixel signals ADC[n-1] to ADC[0] supplied to each asynchronous counter module CMJ[n-1] to CMJ[0].

[0058] As shown in FIG. 11, the calculation unit 430 is configured to include n asynchronous counter modules CMJ[n-1] to CMJ[0] arranged corresponding to each bit of digital pixel signals ADC[n-1] to ADC[0] including an n-bit read reset signal RSTADC and a read signal SIG ADC. In the calculation unit 430, the asynchronous counter modules CMJ[n-1] to CMJ[0] are cascaded through carry input / output lines, thereby forming an asynchronous counter 431.

[0059] Each asynchronous counter module CMJ[n-1] to CMJ[0] has a digital pixel signal input terminal TIadc to which the read reset signal RST ADC and read signal SIGADC of the corresponding bit are input with a time difference, a read signal input terminal TIclk to which a read signal clk for reading the read reset signal RSTADC and read signal SIG ADC of the corresponding bit is input, a carry signal input terminal TIcarry to which a carry signal Carry from the lower side is input, a signal output terminal TOout to which the module output signal out is output, a carry output terminal TOcarry to output the carry signal Carry to the upper side module, and a reset terminal TIrst to which a counter reset signal rst is input.

[0060] Furthermore, each asynchronous counter module CMJ[n-1] to CMJ[0] is configured to include a logic circuit 450 and a D-type flip-flop (DFF) 460 that functions as a holding circuit that performs processing according to the clock signal Lclk generated by the logic circuit 450.

[0061] The logic circuit 450 generates a clock signal Lclk[n-1] by performing a logical operation associated with the digital pixel signal ADC (RSTADC, SIG ADC) read in by the read signal clk and the carry signal Carry[n-1] from the lower-side asynchronous counter module, and outputs the generated clock signal Lclk[n-1] to the clock terminal CK of the D-type flip-flop (DFF) 460.

[0062] The D-type flip-flop (DFF) 460 has a data output Q connected to a signal output terminal TOout, a data inversion output terminal QB connected to its own data input D and a carry output terminal TOcarry connected to a carry signal input terminal TIcarry of the upper asynchronous counter module, and a clock terminal CK connected to the output terminal of the clock signal Lclk of the logic circuit 450.

[0063] (Configuration example of logic circuit 450) Here, a specific example of the configuration of the logic circuit 450 in the arithmetic unit 430 will be described. FIG. 13 is a circuit diagram showing a specific example of the configuration of a logic circuit in an asynchronous counter module per counter stage according to the first embodiment of the present invention.

[0064] The logic circuit 450 of FIG. 13 includes a first logic gate 451, a second logic gate 452, a third logic gate 453, a fourth logic gate 454, a fifth logic gate 455, and a delay circuit 456.

[0065] The first logic gate 451 extracts a first signal An corresponding to the read reset signal RSTADC or the read signal SIG ADC by performing a logical operation (logical product: AND) between the read reset signal RSTADC or the read signal SIG ADC supplied to its first input terminal via the digital pixel signal input terminal TIadc and the read signal clk supplied to its second input terminal via the read signal input terminal TIclk.

[0066] The second logic gate 452 extracts a second signal XAn corresponding to an inverted signal of the read reset signal RSTADC or the read signal SIG ADC by performing a logical operation (negative AND: NAND) between the read reset signal RSTADC or the read signal SIG ADC supplied to its first input terminal via the digital pixel signal input terminal TIadc and the delayed read signal dclkn supplied to its second input terminal via the read signal input terminal TIclk and further delayed by a predetermined time in the delay circuit 456.

[0067] The third logic gate 453 obtains the third signal Bn by performing a logical operation (logical product: AND) between the second signal XAn from the second logic gate 452 and the carry signal Carry[n-1] from the lower bit side input from the carry signal input terminal TIcarry.

[0068] The fourth logic gate 454 obtains a fourth signal S454 by performing a logical operation (negative OR: NOR) between the first signal An and the third signal Bn.

[0069] The fifth logic gate 454 inverts the fourth signal S454 from the fourth logic gate 454 to obtain the clock signal Lclkn.

[0070] In the calculation unit 430 having the above-described configuration, the read patterns PTN for the read signal clk[n]=1 (read signal clk[n] is active) of the digital pixel signal ADC per stage of the asynchronous counter module CMJ are the following four patterns PTN1, PTN2, PTN3, and PTN4, where the carry signal from the lower-order asynchronous counter module CMJ[n-1] is Carry[n-1] and the digital pixel signal ADC[n] from the AD conversion unit 420 is '1' and the digital value high is '0'.

[0071] PTN1.Carry[n-1]=0 / ADC[n]=0 PTN2.Carry[n-1]=0 / ADC[n]=1 PTN3.Carry[n-1]=1 / ADC[n]=0 PTN4.Carry[n-1]=1 / ADC[n]=1

[0072] In the asynchronous counter module CMJ[n], the output signal out[n] and the carry output signal Carry[n] are inverted when the digital pixel signal ADC[n]=1 from the AD conversion unit 420 is read. That is, among the four patterns PTN1, PTN2, PTN3, and PTN4, in patterns PTN2 and PTN4 that read the digital pixel signal ADC[n]=1, the output signal out[n] and the carry output signal Carry[n] are inverted.

[0073] Furthermore, the asynchronous counter module CMJ[n] holds the value when it reads the digital pixel signal ADC[n]=0 from the AD conversion unit 420.

[0074] Figures 14(A) to (J) are timing charts showing an example of operation in the asynchronous counter module CMJ[n] according to the first embodiment of the present invention when the read pattern PTN2 is used, in which the output signal out[n] and the carry output signal Carry[n] are inverted. Figures 15(A) to (J) are timing charts showing an example of operation in the asynchronous counter module CMJ[n] according to the first embodiment of the present invention when the read pattern PTN4 is used, in which the output signal out[n] and the carry output signal Carry[n] are inverted. 16A to 16J are timing charts showing an example of operation when a count-up operation is performed in the asynchronous counter module CMJ[n] according to the first embodiment of the present invention.

[0075] (A) in Figures 14 to 16 shows the carry signal Carry[n-1] from the lower asynchronous counter module CMJ[n-1], (B) in Figures 14 to 16 shows the digital pixel signal ADC[n] from the AD conversion unit 420, (C) in Figures 14 to 16 shows the read signal clk[n] to the asynchronous counter module CMJ[n], (D) in Figures 14 to 16 shows the delayed read signal dxlkn, (E) in Figures 14 to 16 shows the second signal XAn, (F) in Figures 14 to 16 shows the first signal An, (G) in Figures 14 to 16 shows the third signal Bn, (H) in Figures 14 to 16 shows the clock signal Lclk, (H) in Figures 14 to 16 shows the carry signal Carry[n], and (I) in Figures 14 to 16 shows the output signal out[n].

[0076] As described above, as shown in Figures 14 and 15, in patterns PTN2 and PTN4 that read the digital pixel signal ADC[n]=1, the output signal out[n] and the carry output signal Carry[n] are inverted regardless of whether the carry signal Carry[n-1] from the lower-order asynchronous counter module CMJ[n-1] is '0' or '1'.

[0077] Furthermore, as shown in FIG. 16, the asynchronous counter module CMJ[n] holds the value when it reads the digital pixel signal ADC[n]=0 from the AD conversion unit 420. Also, as shown in Figure 16, when the (n-1)-bit signal is read, if the carry signal Carry[n-1] by the lower asynchronous counter module CMJ[n-1] is inverted from '0' to '1', a toggle is transmitted to the clock signal Lclk of the n-bit asynchronous counter module, the n-bit output signal (data) out[n] is also inverted, and a count-up operation is performed.

[0078] The configurations and functions of the components such as the calculation unit 430 of the column readout circuit 40 of the solid-state imaging device 10 have been described in detail above. Next, an example of a process for reading out pixel signals from the solid-state imaging device 10 according to the first embodiment of the present invention will be described with reference to FIG. 17 and FIGS. 18(A) to 18(I). In the following, an example of operation with two bits, that is, a read reset signal RST ADC [1:0] = 01 and a read signal SIGADC [1:0] = 01, will be described. In this example, the expected value is 2b'01 + 2b'01 = 2b'10.

[0079] FIG. 17 is a block diagram showing an example of the configuration of a 2-bit asynchronous counter 431 of the arithmetic unit according to the first embodiment of the present invention. The asynchronous counter of FIG. 17 is formed by cascading two asynchronous counter modules CMJ of FIG. In this case, the carry signal input terminal TIcarry[0] of the lower asynchronous counter module CMJ[0] is connected to the reference potential (here, ground GND).

[0080] 18A to 18I are timing charts for explaining the read processing of the digital pixel signals ADC in each asynchronous counter module of FIG. 18(A) shows the carry signal Carry[n-1] from the lower asynchronous counter module CMJ[0], FIG. 18(B) shows the n-bit wide digital pixel signal ADC[0] supplied to the asynchronous counter module CMJ[0], FIG. 18(C) shows the read signal clk[0] for reading the digital pixel signal ADC[0] supplied to the asynchronous counter module CMJ[0], FIG. 18(D) shows the n-bit wide digital pixel signal ADC[1] supplied to the asynchronous counter module CMJ[1], and FIG. 18(E) Figure 18(F) shows the read signal clk[1] for reading the digital pixel signal ADC[1] supplied to the asynchronous counter module CMJ[1], Figure 18(F) shows the output signal out[0] of the asynchronous counter module CMJ[0], Figure 18(G) shows the carry signal Carry[0] of the asynchronous counter module CMJ[0], Figure 18(H) shows the output signal out[1] of the asynchronous counter module CMJ[1], and Figure 18(I) shows the carry signal Carry[1] of the asynchronous counter module CMJ[1].

[0081] Step ST1: When the 2-bit digital pixel signal RST ADC[0]=1 supplied to the asynchronous counter module CMJ[0] is read (captured) by the active signal R0 of the read signal clk[0], this corresponds to the read pattern PTN2, and the level of the output signal out[0] is inverted from '0' to '1' ('0' → '1').

[0082] Step ST2: When the 2-bit digital pixel signal RST ADC[1]=0 supplied to the asynchronous counter module CMJ[1] is read (captured) by the active signal R1 of the read signal clk[1], this corresponds to the read pattern PTN1, and the level of the output signal out[1] is maintained at '0' ('0' → '0').

[0083] Step ST3: When the 2-bit digital pixel signal SIG ADC[0]=1 supplied to the asynchronous counter module CMJ[0] is read (captured) by the active signal S0 of the read signal clk[0], the level of the output signal out[0] is inverted again from '1' to '0'. At this time, the carry signal Carry[0] transitions from '0' to '1' ('0' → '1'), causing the level of the output signal out[1] of the asynchronous counter module CMJ[1] to invert from '0' to '1' ('0' → '1').

[0084] Step ST4: The 2-bit digital pixel signal SIG ADC[1]=0 supplied to the asynchronous counter module CMJ[1] is read (captured) by the active signal S1 of the read signal clk[1]. At this time, the level of the output signal out[1] is held at '1'.

[0085] When reading is complete, the output signal out[1:0] = 2b'10, which is the expected value.

[0086] As described above, according to the first embodiment, the column readout circuit 40 includes an AD conversion unit 432 that converts the readout reset signal VRST11 and readout signal VSIG11 of the pixel signal Pixout read out to the vertical signal line LSGN from analog signals into an n-bit digital pixel signal ADC[n] (RST ADC[n] and SIG ADC[n]), and an arithmetic unit 430 that includes an n-bit asynchronous counter 431 that is provided with a holding circuit with a control logic function that obtains the difference between the n-bit readout reset signal and the n-bit readout signal that have been AD converted by the AD conversion unit 432.

[0087] Then, the arithmetic section 430 puts the asynchronous counter into a non-operating state, takes in the output of each bit of the n-bit read reset signal RSTADC[n] AD-converted by the AD conversion section 420 in synchronization with the read signal clk, and holds it in DFF460 as a holding circuit. Next, the arithmetic unit 430 sets the asynchronous counter to an operating state, takes in each bit output of the n-bit read signal SIGADC[n] AD-converted by the AD conversion unit 420 in synchronization with the read signal clk, adds it to the read reset signal RSTADC[n] held in DFF451 as a holding circuit, and performs counting, thereby performing arithmetic processing (SIG-RST) of the negative read reset signal and the positive read signal.

[0088] In this calculation process, if the outputs of the AD conversion units are added as they are, the result will be a value of (RST+SIG). To prevent this, in the first embodiment, the column readout circuit inverts the output of the readout reset signal RSTADC to obtain (SIG-RST) and includes a signal inversion unit 440 that inverts the AD-converted n-bit readout reset signal RSTADC after the output unit of the AD conversion unit and before the input unit of the holding circuit to obtain -RST ADC.

[0089] Therefore, according to the first embodiment, the memory circuits of the column readout system can be reduced, which in turn reduces the layout area of ​​the column readout system, thereby enabling miniaturization.

[0090] (Second embodiment) FIG. 19 is a diagram showing an example of the basic configuration of a column readout system according to the second embodiment of the present invention. 20A to 20E are diagrams for explaining a readout method in a column readout system of a solid-state imaging device according to the second embodiment of the present invention. FIG. 21 is a diagram for explaining a method of dividing a digitized signal by the number of samplings when a readout reset signal and a readout signal read out from a pixel are sampled multiple times.

[0091] The solid-state imaging device 10A according to the second embodiment differs from the solid-state imaging device 10 according to the first embodiment described above in the following respects.

[0092] In the solid-state imaging device 10 of the first embodiment, the column readout circuit 40 samples the readout reset signal VRST11 and the readout signal VSIG read out from the pixel by the switch 410 once each, and captures (reads) them into the AD conversion unit 420.

[0093] In contrast to this, in the solid-state imaging device 10A of the second embodiment, in order to enable low-noise readout, the column readout circuit 40A samples and holds the readout reset signal VRST11 and the readout signal VSIG of the pixel signal readout to the vertical signal line LSGN11 multiple times, for example twice, and then inputs them into the AD conversion unit 420A. The calculation unit 430A performs a process of dividing the two digital read reset signals and the two read signals by 2, which is the number of samplings, to obtain the difference between the n-bit read reset signal RSTADC and the n-bit read signal SIG ADC that have been AD converted by the AD conversion unit 420A.

[0094] Furthermore, in the second embodiment, the readout circuit 40A performs the process of dividing by the sampling frequency of 2 described above by reading the digital pixel signal into bits shifted by 1 bit when reading the digital pixel signal into the asynchronous counter module CMJ.

[0095] In this way, when the read reset signal VRST11 is sampled twice and the read signal VSIG11 is sampled twice and divided by the number of samples, 2, the noise component is divided by 1 / sqrt(2). The operation of dividing the read reset signal VRST11 and the read signal VSIG11 by 2 is performed by shifting the signal by 1 bit when the signal is input to the calculation unit 430A, as shown in FIG. This is achieved by incorporating it into a bit.

[0096] According to the second embodiment, it is possible to obtain the same effects as those of the first embodiment described above, and also has the advantage of being able to perform readout with lower noise.

[0097] The solid-state imaging devices 10 and 10A described above can be applied as imaging devices to electronic devices such as digital cameras, video cameras, mobile terminals, surveillance cameras, and medical endoscope cameras.

[0098] FIG. 22 is a diagram showing an example of the configuration of an electronic device equipped with a camera system to which a solid-state imaging device according to an embodiment of the present invention is applied.

[0099] As shown in FIG. 22, the electronic device 800 includes a CMOS image sensor 310 to which the solid-state imaging devices 10 and 10A according to the present embodiment can be applied. Furthermore, the electronic device 800 has an optical system (lens or the like) 820 that guides incident light to the pixel region of the CMOS image sensor 810 (forming an image of a subject). The electronic device 800 includes a signal processing circuit (PRC) 830 that processes the output signal of the CMOS image sensor 810 .

[0100] The signal processing circuit 830 performs predetermined signal processing on the output signal of the CMOS image sensor 810 . The image signal processed by the signal processing circuit 830 can be displayed as a moving image on a monitor such as an LCD display, or output to a printer, or can be recorded directly on a recording medium such as a memory card, and various other forms are possible.

[0101] As described above, the CMOS image sensor 810 may be implemented using the solid-state imaging device 10, By incorporating the 10A, it is possible to provide a high-performance, compact, and low-cost camera system. This makes it possible to realize electronic devices such as surveillance cameras and medical endoscope cameras that are used in applications where camera installation requirements include constraints such as mounting size, number of connectable cables, cable length, and installation height. [Explanation of symbols]

[0102] 10, 10A... solid-state imaging device, 20... pixel unit, 30... vertical scanning circuit, 40, 40A... column readout circuit, 410, 410A... sample and hold switch, 420, 420A... AD conversion unit, 430, 430A... calculation unit, 431... asynchronous counter, 440... signal inversion unit, 450... logic circuit, 451... first logic gate, 4 52···Second logic gate, 453···Third logic gate, 454···Fourth logic gate, 455···Fifth logic gate, 460···D-type flip-flop, CMJ···Asynchronous counter module, Lclk···Clock signal, 800···Electronics, 810···CMOS image sensor, 820···Optical system, 830···Signal processing circuit (PRC).

Claims

1. a pixel section in which pixels that perform photoelectric conversion are arranged in a matrix; a readout circuit having an analog-to-digital (AD) conversion function that converts pixel signals read out as voltage signals from the pixels to signal lines from analog signals to digital pixel signals, The pixel signal read out from the pixel is a readout reset signal and a readout signal that are sequentially read out from the pixels; The readout circuit includes: an AD conversion unit that converts the readout reset signal and the readout signal of the pixel signal read out to the signal line from analog signals to n-bit digital pixel signals; an arithmetic unit including an n-bit asynchronous counter having a holding circuit with a control logic function that obtains a difference between the n-bit read reset signal AD-converted by the AD conversion unit and the n-bit read signal; The calculation unit The asynchronous counter is set to a non-operating state, and each bit output of the n-bit read reset signal AD converted by the AD conversion unit is acquired in synchronization with the read signal and held in the holding circuit, and then the asynchronous counter is set to an operating state, and each bit output of the n-bit read signal AD converted by the AD conversion unit is taken in in synchronization with the read signal, and added to the read reset signal held in the holding circuit to perform a counting operation, and an arithmetic operation is performed on the negative read reset signal and the positive read signal; The calculation unit n asynchronous counter modules arranged corresponding to each bit of the digital pixel signal including the n-bit readout reset signal and the readout signal; The asynchronous counter modules are cascaded through a carry signal input / output line; Each of the asynchronous counter modules comprises: A logic circuit; a D-type flip-flop including a function as the holding circuit that performs processing according to a clock signal by the logic circuit, The logic circuit comprises: generating the clock signal by a logical operation associated with the digital pixel signal read by the read signal and a carry signal from the lower-order asynchronous counter module; The D-type flip-flop is The data output Q is connected to the signal output terminal, The data inversion output terminal QB is connected to its own data input D and a carry signal output terminal connected to a carry signal input terminal of the upper side asynchronous counter module; a clock terminal connected to an output terminal of the clock signal of the logic circuit; Each of the asynchronous counter modules comprises: a pixel signal input terminal to which the readout reset signal and the readout signal of the corresponding bit are input; a read signal input terminal to which a read signal for reading the read reset signal and the read signal of the corresponding bit is input; a carry signal input terminal; A signal output terminal; a carry signal output terminal; a first logic gate that extracts a first signal corresponding to the read reset signal or the read signal by performing a logical operation on the read reset signal or the read signal supplied to a first input terminal and the read signal; a second logic gate that inverts a level of the read reset signal or the read signal by logically operating the read reset signal or the read signal supplied to a first input terminal and the read signal, and extracts a second signal having a phase opposite to that of the first signal; a third logic gate that obtains a third signal by logically operating the second signal by the second logic gate and a carry signal from the lower bit side inputted from the carry signal input terminal; a fourth logic gate that obtains a fourth signal by performing a NOR on the first signal and the third signal; a fifth logic gate that inverts the fourth signal from the fourth logic gate to obtain a clock signal; The D-type flip-flop is A data output Q is connected to the signal output terminal; a data inversion output terminal QB connected to its own data input D and said carry signal output terminal; a clock terminal connected to the clock signal output terminal of the fifth logic gate; the carry signal input terminal is connected to the carry output terminal of the lower asynchronous counter module; The carry signal output terminal is connected to the carry signal input terminal of the upper asynchronous counter module. Solid-state imaging device.

2. a signal inverting unit that inverts the AD-converted n-bit read reset signal, located downstream of the output unit of the AD conversion unit and upstream of the input unit of the holding circuit; 2. The solid-state imaging device according to claim 1.

3. The read pattern of the digital pixel signal ADC per stage of the asynchronous counter module when the read signal is in an active state is: If the carry signal from the lower asynchronous counter module is Carry[n-1], the digital pixel signal from the AD conversion unit is ADC[n], and the digital value high is '1' and the digital value low is '0', then there are four patterns PTN1, PTN2, PTN3, and PTN4 as follows: PTN1. Carry[n-1]=0 / ADC [n] = 0 PTN2. Carry[n-1]=0 / ADC [n]=1 PTN3. Carry[n-1]=1 / ADC[n]=0 PTN1. Carry[n-1]=1 / ADC [n]=1 3. The solid-state imaging device according to claim 1.

4. In the asynchronous counter module, the output signal out[n] and the carry output signal carry[n] are inverted when the digital pixel signal ADC[n]=1 from the AD conversion unit is read.

4. The solid-state imaging device according to claim 3.

5. The asynchronous counter module includes: When the digital pixel signal ADC[n]=0 is read by the AD conversion unit, the value is held.

5. The solid-state imaging device according to claim 3.

6. When the (n-1)-bit signal is read, if the carry signal Carry[n-1] from the lower-order asynchronous counter module is inverted from '0' to '1', a toggle is transmitted to the clock signal of the n-bit asynchronous counter module, the n-bit data is also inverted, and a count-up operation is performed.

6. The solid-state imaging device according to claim 3.

7. The readout circuit includes: the readout reset signal and the readout signal of the pixel signal read out to the signal line are sampled a plurality of times, and input into the AD conversion unit; The calculation unit Dividing the plurality of digital read reset signals and the plurality of read signals by the number of samplings to obtain the difference between the n-bit read reset signal and the n-bit read signal that have been AD converted by the AD conversion unit 7. The solid-state imaging device according to claim 1.

8. The readout circuit includes: When the digital pixel signal is read into the asynchronous counter module, the signal is divided by the number of samplings by taking it into bit-shifted bits.

8. The solid-state imaging device according to claim 7.

9. The readout circuit includes: The sampling is carried out twice, When the digital pixel signal is read into the asynchronous counter module, the signal is divided by the sampling frequency of 2 by shifting the signal by 1 bit.

9. The solid-state imaging device according to claim 8.

10. a pixel section in which pixels that perform photoelectric conversion are arranged in a matrix; a readout circuit having an analog-to-digital (AD) conversion function that converts pixel signals read out as voltage signals from the pixels to signal lines from analog signals to digital pixel signals, The readout circuit includes: an AD conversion unit that converts a read reset signal and a read signal of the pixel signal read out to the signal line from an analog signal to an n-bit digital pixel signal; an arithmetic unit including an n-bit asynchronous counter having a holding circuit with a control logic function for obtaining a difference between the n-bit read reset signal AD-converted by the AD conversion unit and the n-bit read signal; A method for driving a solid-state imaging device, comprising: The pixel signal read out from the pixel is a readout reset signal and a readout signal that are sequentially read out from the pixels; In the calculation unit, The asynchronous counter is set to a non-operating state, and each bit output of the n-bit read reset signal AD converted by the AD conversion unit is acquired in synchronization with the read signal and held in the holding circuit, and then The asynchronous counter is set to an operating state, and each bit output of the n-bit read signal AD converted by the AD conversion unit is taken in in synchronization with the read signal, and added to the read reset signal held in the holding circuit to perform a counting operation, and an arithmetic operation is performed on the negative read reset signal and the positive read signal; and In the calculation unit, n asynchronous counter modules are arranged corresponding to the n bits of the digital pixel signal including the readout reset signal and the readout signal; The asynchronous counter modules are cascaded through a carry signal input / output line; Each of the asynchronous counter modules comprises: A logic circuit; a D-type flip-flop including a function as the holding circuit that performs processing according to a clock signal by the logic circuit, The logic circuit comprises: generating the clock signal by a logical operation associated with the digital pixel signal read by the read signal and a carry signal from the lower-order asynchronous counter module; The D-type flip-flop is The data output Q is connected to the signal output terminal, The data inversion output terminal QB is connected to its own data input D and a carry signal output terminal connected to a carry signal input terminal of the upper side asynchronous counter module; a clock terminal connected to an output terminal of the clock signal of the logic circuit; Each of the asynchronous counter modules comprises: a pixel signal input terminal to which the readout reset signal and the readout signal of the corresponding bit are input; a read signal input terminal to which a read signal for reading the read reset signal and the read signal of the corresponding bit is input; a carry signal input terminal; A signal output terminal; a carry signal output terminal; The D-type flip-flop is A data output Q is connected to the signal output terminal; a data inversion output terminal QB connected to its own data input D and said carry signal output terminal; the clock terminal is connected to the clock signal output terminal of the fifth logic gate; the carry signal input terminal is connected to the carry output terminal of the lower asynchronous counter module; the carry signal output terminal is connected to the carry signal input terminal of the upper asynchronous counter module; extracting a first signal corresponding to the read reset signal or the read signal by performing a logical operation on the read reset signal or the read signal supplied to a first input terminal of a first logic gate and the read signal; a second logic gate performs a logical operation between the read reset signal or the read signal supplied to a first input terminal and the read signal to invert the level of the read reset signal or the read signal, thereby extracting a second signal having a phase opposite to that of the first signal; a third logic gate performs a logical operation on the second signal from the second logic gate and a carry signal from the lower bit side inputted from the carry signal input terminal to obtain a third signal; a fourth logic gate obtains a fourth signal by performing a NOR between the first signal and the third signal; Inverting the fourth signal from the fourth logic gate in the fifth logic gate to obtain a clock signal. A method for driving a solid-state imaging device.

11. a solid-state imaging device; an optical system that forms a subject image on the solid-state imaging device, the solid-state imaging device, a pixel section in which pixels that perform photoelectric conversion are arranged in a matrix; a readout circuit having an analog-to-digital (AD) conversion function that converts pixel signals read out as voltage signals from the pixels to signal lines from analog signals to digital pixel signals, The pixel signal read out from the pixel is a readout reset signal and a readout signal that are sequentially read out from the pixels; The readout circuit includes: an AD conversion unit that converts the readout reset signal and the readout signal of the pixel signal read out to the signal line from analog signals to n-bit digital pixel signals; an arithmetic unit including an n-bit asynchronous counter having a holding circuit with a control logic function that obtains a difference between the n-bit read reset signal AD-converted by the AD conversion unit and the n-bit read signal; The calculation unit The asynchronous counter is set to a non-operating state, and each bit output of the n-bit read reset signal AD converted by the AD conversion unit is acquired in synchronization with the read signal and held in the holding circuit, and then the asynchronous counter is set to an operating state, and each bit output of the n-bit read signal AD converted by the AD conversion unit is taken in in synchronization with the read signal, and added to the read reset signal held in the holding circuit to perform a counting operation, and an arithmetic operation is performed on the negative read reset signal and the positive read signal; The calculation unit n asynchronous counter modules arranged corresponding to each bit of the digital pixel signal including the n-bit readout reset signal and the readout signal; The asynchronous counter modules are cascaded through a carry signal input / output line; Each of the asynchronous counter modules comprises: A logic circuit; a D-type flip-flop including a function as the holding circuit that performs processing according to a clock signal by the logic circuit, The logic circuit comprises: generating the clock signal by a logical operation associated with the digital pixel signal read by the read signal and a carry signal from the lower-order asynchronous counter module; The D-type flip-flop is The data output Q is connected to the signal output terminal, The data inversion output terminal QB is connected to its own data input D and a carry signal output terminal connected to a carry signal input terminal of the upper side asynchronous counter module; a clock terminal connected to an output terminal of the clock signal of the logic circuit; Each of the asynchronous counter modules comprises: a pixel signal input terminal to which the readout reset signal and the readout signal of the corresponding bit are input; a read signal input terminal to which a read signal for reading the read reset signal and the read signal of the corresponding bit is input; a carry signal input terminal; A signal output terminal; a carry signal output terminal; a first logic gate that extracts a first signal corresponding to the read reset signal or the read signal by performing a logical operation on the read reset signal or the read signal supplied to a first input terminal and the read signal; a second logic gate that inverts a level of the read reset signal or the read signal by logically operating the read reset signal or the read signal supplied to a first input terminal and the read signal, and extracts a second signal having a phase opposite to that of the first signal; a third logic gate that obtains a third signal by logically operating the second signal by the second logic gate and a carry signal from the lower bit side inputted from the carry signal input terminal; a fourth logic gate that obtains a fourth signal by performing a NOR on the first signal and the third signal; a fifth logic gate that inverts the fourth signal from the fourth logic gate to obtain a clock signal; The D-type flip-flop is A data output Q is connected to the signal output terminal; a data inversion output terminal QB connected to its own data input D and said carry signal output terminal; a clock terminal connected to the clock signal output terminal of the fifth logic gate; the carry signal input terminal is connected to the carry output terminal of the lower asynchronous counter module; The carry signal output terminal is connected to the carry signal input terminal of the upper asynchronous counter module. electronic equipment.

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