Wafer processing method and wafer processing system

Abstract

The purpose of the present invention is to provide a technology with which it is possible to etch silicon with high accuracy by removing a natural oxide film.　One embodiment of a wafer processing method according to the present invention is for processing a silicon film by disposing a semiconductor wafer, on the upper surface of which the silicon film is formed, in a processing chamber. This wafer processing method comprises: a step in which gas particles of hydrogen, nitrogen, and fluorine are supplied to an oxide film that is formed on the surface of the silicon film so as to form a first modified layer; a first desorption step in which the first modified layer is heated and desorbed; a step in which gas particles of chlorine are supplied to the silicon film after the first desorption step so as to form a second modified layer; and a second desorption step in which the second modified layer is heated and desorbed.

Description

[Technical Field]

[0001] The present invention relates to a wafer processing method and a wafer processing system. [Background technology]

[0002] In the field of semiconductor devices, efforts to reduce power consumption and increase memory capacity are progressing toward further miniaturization and higher integration through the three-dimensional stacking of device structures. Devices with stacked three-dimensional structures are three-dimensional and complex compared to devices with conventional structures, and their manufacture often involves the use of isotropic etching, which allows etching in the lateral direction relative to the wafer surface. Meanwhile, progress in miniaturization is also increasing the need for lateral processing technology at the atomic layer level, and the development of this technology is important.

[0003] Atomic layer etching (ALE) is known as a processing technology at the atomic layer level. Patent document 1 discloses a method for etching a material on a substrate. The method disclosed in Patent document 1 includes specifying process conditions for an atomic layer etching process of a material using a modifying gas and a removing gas, and performing the atomic layer etching process on the material on the substrate as follows: exposing the substrate to a modifying gas to modify the surface of the material, the modifying gas having a modification energy and a desorption energy relative to the material to be etched, and exposing the modified surface to a removing gas to ignite a plasma to remove the modified surface, where the modification energy is smaller than the desorption energy and the desorption energy is smaller than the surface binding energy of the material. Patent document 1 specifically discloses a silicon atomic layer etching (ALE) technology, in which chlorine gas is used to generate plasma and SiCl is removed from the silicon surface. x After forming the altered layer, a wafer bias was applied and Ar ions were used to decompose the SiCl xThe layer removal cycle is repeated. Atomic layer etching of silicon is realized by searching for the ALE window, which is a self-limiting window where the etching rate changes depending on the bias voltage.

[0004] On the other hand, a process for removing a native oxide film is necessary before etching silicon. Patent Document 2 discloses a method for removing a silicon oxide film formed on the surface of a workpiece W, in which HF and NH3 gases are used and the processing temperature is set within a range of 150 to 200°C to perform a removal step for removing the silicon oxide film. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] US Patent Application Publication No. 2020 / 0118835 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-109335 Summary of the Invention [Problem to be solved by the invention]

[0006] The silicon ALE technology disclosed in Patent Document 1 does not fully consider the following three points. The first problem is that processing in a horizontal direction is difficult because the processing is performed in an ionic environment. The second problem is that there is a concern that roughness may occur due to ion sputtering. The third point is that the self-limiting ALE window is narrow.

[0007] Furthermore, the technology for etching silicon native oxide films shown in Patent Document 2 removes the silicon native oxide film, but does not consider the silicon etching process after removal. As a result, if silicon is to be continuously etched, the semiconductor wafer must be transferred to another device, which poses a problem in terms of efficiency in semiconductor device manufacturing.

[0008] In other words, the above-mentioned conventional technology did not take into consideration the problem of removing the native oxide film on the silicon and isotropically etching the silicon layer in the silicon etching process, while controlling the etching amount highly accurately and uniformly over the entire surface of the three-dimensional structure.

[0009] The present invention was made in consideration of the problems of the prior art, and has an object to provide a technique that can remove native oxide films and perform silicon etching with high precision. [Means for solving the problem]

[0010] In order to solve the above problems, one representative wafer processing method of the present invention is a wafer processing method in which a semiconductor wafer having a silicon film formed on its upper surface is placed in a processing chamber and the silicon film is processed, and includes the steps of: supplying hydrogen, nitrogen, and fluorine gas particles to an oxide film formed on the surface of the silicon film to form a first modified layer; a first desorption step of heating the first modified layer to desorb it; after the first desorption step, supplying chlorine gas particles to the silicon film to form a second modified layer; and a second desorption step of heating the second modified layer to desorb it. [Effects of the Invention]

[0011] According to the present invention, the native oxide film can be removed and silicon etching can be performed with high precision. Problems, configurations, and effects other than those described above will become apparent from the following description of the preferred embodiments. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a schematic diagram of an etching step in a semiconductor device manufacturing process. [Figure 2] FIG. 2 is a schematic diagram of an etching processing apparatus. [Figure 3A] FIG. 3A is a process schematic diagram of the etching method of this embodiment. [Figure 3B] FIG. 3B is a process schematic diagram of the etching method of this embodiment. [Figure 4] FIG. 4 is a diagram showing the experimental results of the relationship between the etching amount and cycle dependency in the etching method of this embodiment. [Figure 5A] FIG. 5A is a diagram showing test results regarding the dependence of the etching amount of polysilicon by the etching process of this embodiment on the irradiation time of fluorine radicals, nitrogen radicals, and hydrogen radicals in step (a) of FIG. 3B. [Figure 5B] FIG. 5B is a diagram showing test results regarding the dependence of the etching amount of polysilicon by the etching process of this embodiment on the adsorption time of chlorine radicals in step (b) of FIG. 3B. [Figure 6] FIG. 6 is a diagram showing the dependency of the etching amount of polysilicon and oxide film on the number of cycles when step (a) of FIG. 3B to step (d) of FIG. 3B are repeated. [Figure 7] FIG. 7 is a schematic diagram of the configuration of a wafer processing system that executes the wafer processing method of this embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that the present invention is not limited to this embodiment. In addition, in the description of the drawings, the same parts are designated by the same reference numerals.

[0014] In this disclosure, the term "native oxide film" refers to an oxide film other than an intentionally formed oxide film. This term is to be distinguished from oxide films formed by thermal oxidation of Si, oxide films formed by CVD (Chemical Vapor Deposition), oxide films formed using oxygen radicals, etc. Furthermore, the term "native oxide film" also refers to oxide films that are not formed in the intended location, such as an oxide film that is formed on a surface perpendicular to the wafer's main surface when an attempt is made to form an oxide film on a surface parallel to the wafer's main surface. The term "window" refers to the appropriate process conditions for carrying out a certain process. Additionally, "upper" refers to the vertically upward direction when a plate-like member or layer is placed horizontally. "Lower" refers to the vertically downward direction when a plate-like member or layer is placed horizontally. For example, when illustrating a plate-like member or a layer included in a plate-like member, the surface shown at the top or bottom on the drawing may be referred to as the "upper surface" or the "lower surface."

[0015] (Conventional example) Using Figure 1, we will explain an example of a silicon film to be etched and its pattern processing. Figure 1 is a schematic diagram of the etching process in a semiconductor device manufacturing process. Figure 1(a) is a diagram showing an example of a cross section of the etching target. Figure 1(b) is a diagram showing the target after etching. As shown in Figure 1(a), the silicon film 4 to be etched is, for example, a silicon film formed on a wafer Wf. The silicon film 4 has an uneven shape formed in a direction perpendicular to the main surface of the wafer Wf, resulting in a so-called trench structure. The width of the convex portion of the trench (the length in the direction parallel to the main surface of the wafer Wf) is W1. The silicon nitride film 1 is a film formed from a compound of silicon and nitrogen. The silicon oxide film 2 is a film formed from a compound of silicon and oxygen. The silicon nitride film 1 and the silicon oxide film 2 have a predetermined pattern shape and function as a mask (hard mask) in the etching process. In addition, a native oxide film 3 is formed on the surface of the silicon film 4. In addition, the native oxide film 3 is formed on the surface of the silicon film 4 due to the influence of oxygen and moisture. The silicon oxide film 2 is an oxide film that is intentionally formed to function as a mask, whereas the native oxide film 3 is an oxide film that is unintentionally formed.

[0016] Figure 1(b) shows an ideal etching process. Because the etching is isotropic, the grooves are enlarged in a direction parallel to the main surface of the wafer Wf. The width W2 of the convex portion is smaller than the width W1 before the process. Furthermore, the native oxide film 3 is also removed to the extent that it was formed, while the shape of the silicon film 4 is maintained.

[0017] However, in reality, it is difficult to obtain the shape shown in Figure 1(b). If the etching process is performed without removing the native oxide film 3, the surface roughness of the silicon film 4 will worsen, which may adversely affect the electrical characteristics of the semiconductor device.

[0018] (Configuration of etching treatment device) The overall configuration of the etching processing apparatus 100 will be outlined with reference to Figure 2. Figure 2 is a schematic diagram of the etching processing apparatus 100. The processing chamber 34 is composed of a base chamber (vacuum vessel) 37, in which a wafer stage 10 for placing a wafer 9 is installed. A plasma source (ICP plasma source) using an ICP (Inductively Coupled Plasma) discharge method is installed above the processing chamber 34. The ICP plasma source is used to generate reactive gases by plasma, and is used to clean the inner walls of the chamber and to process film layers to be processed on wafers.

[0019] A cylindrical discharge tube 12 constituting an ICP plasma source is installed above a processing chamber 34, and an ICP coil 11 is installed outside the discharge tube 12. A high-frequency power supply 35 is connected to the ICP coil 11 via a matching device 36, and high-frequency power is supplied for plasma generation. The frequency of the high-frequency power is in the frequency band of several tens of megahertz, such as 13.56 MHz. A top plate 13 is installed above the discharge tube 12. A gas dispersion plate 14 and a shower plate 15 are installed below the top plate 13, and processing gas is introduced into the discharge tube 12 via the gas dispersion plate 14 and shower plate 15.

[0020] The supply flow rates of the process gases are adjusted by mass flow controllers 30 installed for each gas type. A gas distributor 31 is installed downstream of the mass flow controller 30, and the flow rates and combinations of gases supplied to the center of the discharge tube 12 and gases supplied to the periphery are independently controlled. This allows for precise control of the spatial distribution of the process gas partial pressure. While FIG. 2 shows examples in which argon (Ar) gas, nitrogen (N2) gas, hydrogen (H2) gas, sulfur hexafluoride (SF6) gas, difluoromethane (CH2F2) gas, oxygen (O2) gas, and chlorine (Cl2) gas are used as process gases, other gases may also be used.

[0021] An exhaust mechanism 20 is connected to the bottom of the processing chamber 34 via a vacuum exhaust pipe 19 in order to reduce the pressure in the processing chamber 34. The exhaust mechanism 20 is configured, for example, by a turbomolecular pump, a mechanical booster pump, or a dry pump, but is not limited to these. In addition, a pressure adjustment mechanism 21 is installed in the vacuum exhaust pipe 19 in order to adjust the pressure in the processing chamber 34.

[0022] An IR lamp unit for heating the wafer 9 is installed above the wafer stage 10. The IR lamp unit includes an IR lamp 60, a reflector 61 that reflects IR light, and an IR light transmitting window 72. Here, the IR lamps 60 used are circular (circular-shaped) IR lamps 60-1, 60-2, and 60-3.

[0023] The IR lamps 60 emit light (herein referred to as IR light) mainly ranging from visible light to infrared light. In this example, three circles of IR lamps 60-1, 60-2, and 60-3 are arranged concentrically, but two circles, or four or more circles may also be used. A reflector 61 is installed above the IR lamps 60 to reflect the IR light downward (towards the wafer placement direction).

[0024] An IR lamp power supply 73 is connected to the IR lamp 60, and a high frequency cut filter 74 is installed midway between them to prevent high frequency power noise from entering the IR lamp power supply 73.

[0025] The IR lamp power supply 73 is also provided with a function for independently controlling the power supplied to the IR lamps 60-1, 60-2, and 60-3, making it possible to adjust the radial distribution of the amount of heat applied to the wafer (some of the wiring is not shown).

[0026] A flow path 27 is formed in the center of the IR lamp unit. This flow path 27 is equipped with an ion shielding plate 26 with multiple holes that suppresses ions and electrons generated in the plasma and allows neutral gases and neutral radicals to pass through and irradiate the wafer.

[0027] A coolant flow path 39 for cooling the wafer stage 10 is formed inside the wafer stage 10, and a chiller 38 circulates and supplies the coolant through the flow path 39. In addition, in order to fix the wafer 9 by electrostatic adsorption, a plate-shaped electrode plate 40 is embedded in the wafer stage 10 and is connected to a DC power supply.

[0028] Furthermore, in order to efficiently cool the wafer 9, helium (He) gas with a flow rate adjusted by a mass flow controller 32 can be supplied between the backside of the wafer 9 and the wafer stage 10. Furthermore, in order to prevent the backside of the wafer 9 from being scratched when heating or cooling the wafer 9 while it is being adsorbed, the surface (wafer mounting surface) of the wafer stage 10 is coated with a resin such as polyimide. Furthermore, a thermocouple 70 for measuring the temperature of the wafer stage 10 is installed inside the wafer stage 10, and this thermocouple 70 is connected to a thermocouple thermometer 71.

[0029] (etching process) The wafer processing method of this embodiment will be described with reference to FIGS. 3A and 3B. In the wafer processing method, a semiconductor wafer having a silicon film (silicon film 4) formed on its upper surface as a processing target is placed in a processing chamber and the silicon film is processed. FIGS. 3A and 3B are process schematic diagrams of the etching processing method of this embodiment. FIGS. 3A and 3B show a portion of the cross-sectional structure of the processing target, and are schematically represented using atoms that constitute the processing target. In the step shown in FIG. 3A, a native oxide film is removed, and in the step shown in FIG. 3B, an etching process of the processing target film is performed. The processing shown in FIGS. 3A and 3B is performed with the wafer 9 still mounted on the wafer stage 10.

[0030] Step (a) of FIG. 3A shows the initial state of a silicon film 4, which is a silicon film to be processed. A native oxide film 3 is a native oxide film formed in advance on the surface of the silicon film 4. The silicon film 4 is a silicon layer underlying the native oxide film 3. The silicon film 4 is composed of regularly arranged silicon atoms. The native oxide film 3 is composed of silicon atoms on the surface of the silicon film 4 and oxygen atoms attached to cover the silicon atoms on the surface. In this disclosure, the two film types, the native oxide film 3 and the silicon film 4, are etched in a consistent manner using the same equipment. Detailed process steps are described below.

[0031] The silicon film 4 is not limited to being formed on the upper surface of the wafer 9, but may be a silicon film formed on the wafer 9. In addition, when the wafer 9 is a silicon wafer, the silicon film 4 may be the surface of the wafer 9. 3A and 3B show a state in which a silicon film 4 is formed on the upper surface of the wafer 9 and gas is supplied from the upper surface of the silicon film 4, but the silicon film 4 may be a film formed on the side surface of a trench structure, as shown in Fig. 4. In other words, the present disclosure is applicable not only to a native oxide film 3 formed in a direction parallel to the main surface of the wafer 9, but also to a native oxide film 3 formed in a direction perpendicular to the main surface of the wafer 9. Furthermore, the native oxide film 3 in this disclosure is assumed to be formed under conditions in which the semiconductor is placed in a processing chamber 34 during a semiconductor manufacturing process. Since it has been found to have a thickness of about 1 nanometer (nm), which is known to correspond to the thickness of one atomic layer, it is represented as a film of one layer in FIG. 3A.

[0032] Step (b) of FIG. 3A shows a process of forming a first modified layer by supplying particles of hydrogen, nitrogen, and fluorine gas to an oxide film previously formed on the surface of a silicon film. The first modified layer also contains ammonium silicofluoride. In step (b) of FIG. 3A, sulfur hexafluoride gas, nitrogen gas, and hydrogen gas are first supplied and introduced into the discharge region 50. Next, the high-frequency power supply 35 is turned on to supply high-frequency power, and plasma is formed in the discharge region 50. . Fluorine (F) radicals, nitrogen (N) radicals, and hydrogen (H) radicals generated in the plasma are supplied to the processing chamber 34 via the flow path 27 and the ion shielding plate 26 and are adsorbed onto the surface of the wafer 9. The fluorine radicals, nitrogen radicals, and hydrogen radicals react with the native oxide film 3, thereby modifying the native oxide film 3 and forming an ammonium silicofluoride (NH4)2SiF6 layer (first modified layer) 5, which is a compound containing silicon, nitrogen, fluorine, and hydrogen, on the surface of the silicon film 4.

[0033] Step (c) in FIG. 3A illustrates a first desorption step in which the first modified layer 5 is heated and desorbed. In the first desorption step, heating is performed by irradiating the processing chamber 34 with electromagnetic waves. Specifically, in step (c) in FIG. 3A, argon (Ar), an inert gas, is supplied, the high-frequency power supply 35 is turned on to form plasma in the discharge region 50, and infrared (IR) radiation is irradiated from the IR lamp 60 to heat the wafer 9. This method thermally decomposes and desorbs the first modified layer 5 formed on the surface of the silicon film 4, thereby etching (removing) the native oxide film 3. The temperature of the wafer 9 during this reaction is preferably 150°C or higher. In other words, the silicon film 4 is heated to 150°C or higher. The IR lamp is then turned off, and the wafer is cooled by supplying helium (He) gas for wafer cooling to the backside of the wafer 9, restoring the temperature of the wafer 9 to that of the wafer stage 10. This is to prevent silicon atoms from diffusing from the surface of the silicon film 4.

[0034] 3A and 3B, a purging step of evacuating the inside of the processing chamber 34 to reduce the pressure may be included. The purging step is performed by operating the exhaust mechanism 20.

[0035] After the native oxide film removal process from step (a) of FIG. 3A to step (c) of FIG. 3A is performed, the silicon film 4 etching process from step (a) of FIG. 3B to step (d) of FIG. 3B is performed.

[0036] Step (a) of FIG. 3B is a step subsequent to step (c) (first desorption step) of FIG. 3A. In step (a) of FIG. 3B, a layer (damaged layer 6) with hydrogen, nitrogen, or fluorine particles attached thereto is formed on the surface of the silicon film 4. Specifically, in step (a) of FIG. 3B, the same gas system as in step (b) of FIG. 3A—sulfur hexafluoride gas, nitrogen gas, and hydrogen gas—is first supplied and introduced into the discharge region 50. Next, the high-frequency power supply 35 is turned on to supply high-frequency power, thereby forming plasma in the discharge region 50. Fluorine radicals, nitrogen radicals, and hydrogen radicals generated in the plasma are supplied to the processing chamber 34 via the flow path 27 and the ion shielding plate 26 and adsorbed onto the surface of the wafer 9. The fluorine radicals, nitrogen radicals, and hydrogen radicals react with the silicon film 4, forming the damaged layer 6. Then, the gas containing fluorine, nitrogen, and hydrogen atoms remaining in the gas phase is evacuated (purged).

[0037] Although the same gas system is used in step (a) of FIG. 3B and step (b) of FIG. 3A, adjusting the flow rate ratio of sulfur hexafluoride gas, nitrogen gas, and hydrogen gas can increase the selectivity against native oxide film that may be generated during silicon layer etching in steps (a) to (d) of FIG. 3B. FIG. 4 shows an example of the amount of oxide film etched before and after adjusting the flow rate ratio of sulfur hexafluoride gas, nitrogen gas, and hydrogen gas in step (a) of FIG. 3B and step (b) of FIG. 3A. FIG. 4 shows experimental results of the relationship between the amount of etching and cycle dependency in the etching method of this embodiment. By adjusting the flow rate ratio, it is possible to almost completely suppress the generation of native oxide film, as shown in the graph of FIG. 3B(a) in FIG. 4.

[0038] Step (b) in FIG. 3B is a step that follows the first desorption step. Step (b) in FIG. 3B illustrates a step of supplying chlorine gas particles to the silicon film to form a second modified layer. Specifically, in step (b) in FIG. 3B, a gas containing chlorine atoms (e.g., chlorine (Cl) gas, boron trichloride (BCl) gas, etc.) is first introduced into the discharge region 50. The high-frequency power supply 35 is turned on to supply high-frequency power, and plasma is formed in the discharge region 50. Chlorine (Cl) radicals generated in the plasma are supplied to the processing chamber 34 via the flow path 27 and the ion shielding plate 26 and adsorbed onto the surface of the wafer 9. The chlorine radicals react with the damaged layer 6 to form a layer (second modified layer) 7 of a compound containing silicon, fluorine, hydrogen, nitrogen, and chlorine. Then, the high-frequency power supply 35 is turned off to stop plasma generation. The gas containing chlorine atoms remaining in the gas phase is then evacuated to a vacuum.

[0039] Step (c) in FIG. 3B shows a second desorption step in which the second modified layer is heated to desorb the second modified layer. In the second desorption step, the heating is performed by irradiating electromagnetic waves. Specifically, in step (c) in FIG. 3B, argon (Ar) gas, which is an inert gas, is supplied, and the high frequency power supply 35 is turned on to form plasma in the discharge region 50. At the same time, the wafer is heated by the IR lamp 60. 9 By this method, the second modified layer 7 formed on the surface of the silicon film 4 is thermally decomposed and desorbed, and thereby the second modified layer 7 is removed as shown in step (d) of FIG. 3B.

[0040] 3B and 3C, a purging step of evacuating the inside of the processing chamber 34 to reduce the pressure may be included. The purging step is performed by operating the exhaust mechanism 20.

[0041] (Process conditions) Fig. 5A is a graph showing test results regarding the dependence of the amount of polysilicon etched by the etching process of this embodiment on the irradiation time of fluorine radicals, nitrogen radicals, and hydrogen radicals in step (a) of Fig. 3B. Fig. 5B is a graph showing test results regarding the dependence of the amount of polysilicon etched by the etching process of this embodiment on the adsorption time of chlorine radicals in step (b) of Fig. 3B.

[0042] As shown in Figure 5A, the amount of etching performed between the formation of the second modified layer 7 (step (a) in Figure 3B) and the desorption (step (d) in Figure 3B) saturates at about 1.2 nm when the radical irradiation time in step (a) in Figure 3B is in the range of 5 (s) to 30 (s). Also, as shown in Figure 5B, the amount of etching performed between the formation of the second modified layer 7 (step (a) in Figure 3B) and the desorption (step (d) in Figure 3B) saturates at about 1.5 nm when the adsorption time, which is the time for adsorbing chlorine radicals to the damaged layer 6 in step (b) in Figure 3B, is in the range of 10 (s) to 30 (s).

[0043] Therefore, when the irradiation time in FIG. 3B(a) is set to a range of 5 to 30 seconds and the adsorption time in FIG. 3B(b) is set to a range of 10 to 30 seconds, uniform etching capable of removing one atomic layer can be performed.

[0044] When etching a pattern with a complex structure, such as a deep groove structure, it is necessary to increase the radical irradiation time and adsorption time so that the radicals can reach the film to be processed. On the other hand, if the radical irradiation time and adsorption time are increased too much, deposition may occur and the surface roughness may worsen. Therefore, it is desirable to adjust the radical irradiation time and adsorption time according to the structure of the target pattern.

[0045] According to the wafer processing method of the present disclosure, a silicon film is processed by performing a cycle consisting of multiple steps, including the step of forming a second modified layer and the second desorption step, multiple times. Specifically, the surface of the silicon film 4 is exposed by performing steps (a) through (d) of FIG. 3B. If the desired etching depth is not achieved, the process returns to step (a) of FIG. 3B and repeats steps (a) through (d) of FIG. 3B to ultimately achieve the desired etching depth. FIG. 6 shows the dependence of the etching depth of polysilicon and oxide film on the number of cycles when steps (a) through (d) of FIG. 3B are repeated. The circle indicated by point 301 represents the test result for the etching depth of polysilicon, and the square indicated by point 302 represents the test result for the etching depth of oxide film. The dashed line 401 represents the result of linear regression of the etching depth test results for polysilicon. The test results are shown by a dashed line 401 that passes through the circles that represent the measurement results. As shown by dashed line 401, polysilicon can be etched linearly by increasing the number of cycles. Furthermore, since the amount of oxide film etched does not increase even when the number of cycles is increased, polysilicon can be selectively etched.

[0046] In this invention, the examples have been explained using a polysilicon sample as an example of a silicon layer, but similar effects can be obtained with a single-crystal silicon layer or an amorphous silicon layer. Figure 6 shows a comparison of the etching amount of the silicon layer according to this invention and that of a polysilicon sample. Point 303 is the etching amount of a single-crystal silicon layer processed under the same conditions.

[0047] (Wafer Processing System) 7 is a schematic diagram of a wafer processing system 200 that executes the wafer processing method of this embodiment. The wafer processing system 200 includes an etching processing apparatus 100 and a control device 500. The control device 500 includes at least one processor 501 and at least one memory 502.

[0048] The control device 500 acquires the temperature from the thermocouple thermometer 71. The control device 500 also controls the exhaust mechanism 20, the pressure adjustment mechanism 21, the high frequency power supply 35, the mass flow controllers 30 and 32. ,blood The control device 500 controls the operation of the lamp 38 and the IR lamp power supply 73. In addition, the control device 500 is connected to sensors (not shown) to control the operation of the etching processing device 100, and also controls the power supply and the like.

[0049] The memory 502 stores a program that, when executed by the processor 501, causes the etching processing apparatus 100 to perform the wafer processing method described in this embodiment.

[0050] (Actions and Effects) As shown by the dashed line 401 in Figure 6, the wafer processing method of the present disclosure allows for linear etching with an increase in the number of cycles, thereby achieving self-limiting atomic layer etching of the silicon film.

[0051] Furthermore, according to the wafer processing method of the present disclosure, the etching process of the silicon film is performed in particular as shown in FIG. of As shown in steps (a) and (b), the process is carried out in a radical environment. Since the process can be avoided in an ion environment, it is possible to easily process the wafer in a direction parallel to the main surface of the wafer in addition to processing the wafer in a direction perpendicular to the main surface of the wafer. Furthermore, the irradiation time and adsorption time of radicals, which are the conditions for achieving a uniform etching amount, can be set with a certain margin, thereby ensuring a process window. Since the irradiation time and adsorption time are parameters that are relatively easy to control, it becomes easy to deal with the deterioration of surface roughness.

[0052] As described above, according to the present invention, the native oxide film can be removed and silicon etching can be performed with high precision.

[0053] In this embodiment, the IR lamps 60 are used to heat the wafer, but the heating method is not limited to this.

[0054] Furthermore, the present invention is not limited to the above-described embodiments, but includes various modifications. For example, the above-described embodiments have been described in detail to clearly explain the present invention, and the present invention is not necessarily limited to those including all of the described configurations. Furthermore, it is possible to replace part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is also possible to add, delete, or replace part of the configuration of each embodiment with other configurations.

[0055] The following are some possible embodiments of the present invention: but However, this is not limited to this. (Aspect 1) A processing method for etching a native oxide film formed on silicon and a silicon layer, comprising: The wafer is placed on a wafer stage in a processing chamber inside a vacuum vessel; supplying fluorine, nitrogen, and hydrogen radicals to the wafer to form a modified layer on the native oxide film; a step of heating the wafer to remove a modified layer formed on the native oxide film, supplying fluorine, nitrogen, and hydrogen radicals to the wafer to form a modified layer on the silicon surface after removing the native oxide film; a step of supplying chlorine radicals to the wafer to further modify the modified layer formed on the silicon surface, and desorbing and removing the modified layer formed by chlorine radical adsorption by heating and inert gas plasma discharge; An etching method in which a step of forming a modified layer on the silicon and a step of removing the formed modified layer are repeated. (Aspect 2) In aspect 1, supplying fluorine, nitrogen, and hydrogen radicals to the wafer to form a modified layer on the native oxide film; a step of supplying fluorine, nitrogen, and hydrogen radicals to the wafer to form a modified layer on the silicon surface after removing the native oxide film, This is an etching process method that uses the same gas system containing fluorine, nitrogen, and hydrogen radicals, but maintains selectivity to other films by adjusting the gas flow ratio. (Aspect 3) In aspect 1, The etching processing apparatus wherein the modified layer formed on the silicon surface is a layer of a compound containing silicon, fluorine, nitrogen, hydrogen and chlorine. (Aspect 4) In aspect 1, A consistent processing method in which silicon oxide film etching, including native oxide film etching, and silicon etching are performed in the same equipment. [Explanation of symbols]

[0056] 1 :Shi Recon Nitriding film, 2: silicon oxide film, 3: native oxide film, 4: silicon film, 5: first modified layer, 6: damaged layer, 7: second modified layer, 9: wafer, 10: wafer stage, 11: ICP coil, 12: discharge tube, 13: top plate, 14: gas dispersion plate, 15: shower plate, 19: vacuum exhaust piping, 20: exhaust mechanism, 21: pressure adjustment mechanism, 26: ion shielding plate, 27: flow path, 30, 3 2: Mass flow controller, 34: processing chamber, 35: high frequency power supply, 36: matching machine, 37: base chamber, 38: chiller, 39: flow path, 40: electrode plate, 50: discharge area, 60: IR lamp, 61: reflector, 70: thermocouple, 71: thermocouple thermometer, 72: IR light transmission window, 73: IR lamp power supply, 74: high frequency cut filter, 100: etching processing device, 200: wafer processing system, 500: control device, 501: processor, 502: memory

Claims

1. A wafer processing method in which a semiconductor wafer having a silicon film formed on an upper surface thereof is placed in a processing chamber and the silicon film is processed, the method comprising: supplying hydrogen, nitrogen, and fluorine gas particles to the oxide film formed on the surface of the silicon film to form a first modified layer; a first desorption step of heating the first modified layer to desorb it; a step of supplying chlorine gas particles to the silicon film after the first desorption step to form a second modified layer having self-saturation properties; a second desorption step of heating and desorbing the second modified layer after the step of forming the second modified layer.

2. 2. The wafer processing method of claim 1, a wafer processing method in which a plurality of steps including the step of forming the second modified layer and the second desorption step are regarded as one cycle, and the cycle is performed a plurality of times to process the silicon film;

3. 3. The wafer processing method according to claim 1, further comprising: The wafer processing method further comprises irradiating the inside of the processing chamber with electromagnetic waves to perform the heating in the first or second desorption step.

4. 3. The wafer processing method according to claim 1, further comprising: The wafer processing method further comprises heating the silicon film to 150° C. or higher in the first desorption step.

5. 3. The wafer processing method according to claim 1, further comprising: The wafer processing method, wherein the first modified layer comprises ammonium silicofluoride.

6. 3. The wafer processing method according to claim 1, further comprising: A wafer processing method in which a layer of hydrogen, nitrogen or fluorine particles adhered to the surface of the silicon film after the first desorption step is formed.

7. 3. The wafer processing method according to claim 1, further comprising: A wafer processing method comprising a purging step of evacuating the inside of the processing chamber to reduce pressure between the step of forming the first modified layer and the first desorption step, or between the step of forming the second modified layer and the second desorption step.

8. A wafer processing method in which a semiconductor wafer having a silicon film formed thereon is placed in a processing chamber and the silicon film is processed, the method comprising: supplying hydrogen, nitrogen, and fluorine gas particles to the silicon film to form a first modified layer; supplying chlorine gas particles to the first modified layer to form a second modified layer; a second desorption step of heating the second modified layer to desorb it.

9. 9. The wafer processing method according to claim 8, a wafer processing method in which a plurality of steps including the step of forming the second modified layer and the second desorption step are regarded as one cycle, and the cycle is performed a plurality of times to process the silicon film;

10. 10. The wafer processing method according to claim 8 or 9, A wafer processing method comprising a purging step of evacuating the inside of the processing chamber to reduce pressure between the step of forming the first modified layer and the step of forming the second modified layer, or between the step of forming the second modified layer and the desorption step.

11. A wafer processing system for processing a semiconductor wafer having a silicon film formed on an upper surface thereof, the system including: an etching treatment device; a processor; a memory having a program; 2. A wafer processing system, wherein the program is configured to cause the etching processing apparatus to perform the wafer processing method according to claim 1 when executed by the processor.

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