Light-emitting device, image forming device, photoelectric conversion device, electronic device, lighting device, mobile object, and method for manufacturing light-emitting device

Abstract

To provide a technology that is advantageous for improving the luminous efficiency and color purity of a display.SOLUTION: A light emitting device comprises a plurality of light emitting elements arranged on the main surface of a substrate, each of the plurality of light emitting elements has a light emitting layer, a reflective layer arranged between the light emitting layer and the main surface of the substrate and reflecting light generated by the light emitting layer, a first electrode arranged between the reflective layer and the light emitting layer, an optical distance adjustment layer arranged between the reflective layer and the first electrode, an insulating layer covering the periphery of the first electrode and arranged between the optical distance adjustment layer and the light emitting layer between two light emitting elements adjacent to each other of the plurality of light emitting elements, and a conductive plug extending from the insulating layer through the optical distance adjustment layer to reach the height of the top surface of the reflective layer while electrically contacting the first electrode.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device, an image forming device, a photoelectric conversion device, an electronic device, a lighting device, a moving object, and a method for manufacturing a light-emitting device. [Background technology]

[0002] There has been growing interest in light-emitting devices using self-luminous elements such as organic electroluminescence (EL) elements. Patent Document 1 discloses a light-emitting element that incorporates a resonator structure that resonates and extracts emitted light of each emitted color in order to improve luminous efficiency and color purity when realizing full-color display devices using light-emitting elements. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-059116 Summary of the Invention [Problem to be solved by the invention]

[0004] In the configuration disclosed in Patent Document 1, a plug electrically connecting the reflective pattern and the counter electrode made of a transparent conductive material is provided in a transparent dielectric film for adjusting the optical distance between the reflective pattern and the counter electrode. The plug disclosed in Patent Document 1 can be formed by providing a contact hole at a predetermined position in the transparent dielectric film, depositing a conductive material such as metal to fill the contact hole, and polishing away unnecessary conductive material using a method such as CMP. In this polishing process, not only the conductive material but also the surface of the transparent dielectric film is polished, which may result in the film thickness of the transparent dielectric film deviating from the appropriate thickness for realizing a resonator structure.

[0005] An object of the present invention is to provide a technique that is advantageous for improving the luminous efficiency and color purity of a light-emitting device. [Means for solving the problem]

[0006] In view of the above problems, a light emitting device according to an embodiment of the present invention is a light emitting device in which a plurality of light emitting elements are arranged on a main surface of a substrate, each of the plurality of light emitting elements including a light emitting layer, a reflective layer arranged between the light emitting layer and the main surface of the substrate and reflecting light generated in the light emitting layer, a first electrode arranged between the reflective layer and the light emitting layer, and an optical distance adjustment layer arranged between the reflective layer and the first electrode, the plurality of light emitting elements including a first light emitting element and a second light emitting element arranged adjacent to each other, an insulating layer is arranged on each of a peripheral portion of the first electrode of the first light emitting element and a peripheral portion of the first electrode of the second light emitting element, and between the optical distance adjustment layer and the light emitting layer between the first light emitting element and the second light emitting element, and a conductive plug is arranged in the first light emitting element, extending from the insulating layer through the optical distance adjustment layer, and reaching the height of an upper surface of the reflective layer while being in electrical contact with the first electrode. The conductive plug has a first surface disposed on the reflective layer side and a second surface disposed in the insulating layer, and the second surface is disposed at a position farther from the main surface than the first electrode of the first light-emitting element and the first electrode of the second light-emitting element. It is characterized by the following. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a technique that is advantageous for improving the luminous efficiency and color purity of a light-emitting device. [Brief explanation of the drawings]

[0008] [Figure 1] 1A and 1B are a plan view and a cross-sectional view of a light emitting device according to an embodiment of the present invention. [Figure 2] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 3] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 4] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 5] FIG. 2 is a cross-sectional view showing a modification of the light emitting device of FIG. [Figure 6] FIG. 2 is a plan view showing a modification of the light emitting device of FIG. [Figure 7] FIG. 7 is a cross-sectional view of the light-emitting device of FIG. [Figure 8] FIG. 7 is a cross-sectional view of the light-emitting device of FIG. [Figure 9] FIG. 2 is a cross-sectional view of the light emitting device of the present embodiment. [Figure 10] FIG. 1 is a diagram showing an example of an image forming apparatus using a light emitting device according to an embodiment of the present invention. [Figure 11] 10A to 10C are diagrams showing application examples of the light emitting device of the present embodiment. [Figure 12] FIG. 1 is a diagram showing an example of a photoelectric conversion device using the light emitting device of this embodiment. [Figure 13] 1A to 1C are diagrams illustrating examples of electronic devices using the light-emitting device of this embodiment. [Figure 14] 10A to 10C are diagrams showing application examples of the light emitting device of the present embodiment. [Figure 15] 1 is a diagram showing an example of a lighting device using the light-emitting device of this embodiment. [Figure 16] 1A and 1B are diagrams showing an example of a moving object using the light emitting device of the present embodiment. [Figure 17] FIG. 1 is a diagram showing an example of a wearable device using the light-emitting device of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] A light emitting device according to an embodiment of the present disclosure will be described with reference to Figures 1(a) and 1(b) to 7. Figure 1(a) is a plan view of a light emitting device 100 according to this embodiment. The light emitting device 100 may include, for example, a display area 201 in which a plurality of pixels, each including a light emitting layer, are arranged in a two-dimensional array on a substrate, and a peripheral circuit area 202 that controls the writing operation of pixel signals of an image to be displayed in the display area 201. The light emitting device 100 may display an image (video), such as a still image or a moving image, in the display area 201. The image may be a monochrome image or a full-color image.

[0011] FIG. 1(b) is a cross-sectional view of a pixel 150 disposed in a display region 201, and including a light-emitting element having an organic functional layer 111 containing a light-emitting layer containing a self-luminous material such as an organic EL material. In this embodiment, a plurality of pixels 150 are formed on a main surface 121 of a substrate 101 in the display region 201. Each of the plurality of pixels 150 includes a sub-pixel 151b, a sub-pixel 151g, and a sub-pixel 151r, each of which emits light of a different color. Hereinafter, when a specific sub-pixel is referred to, a subscript is added after the reference number, such as sub-pixel 151 "b," and when any sub-pixel is acceptable, the sub-pixel will simply be referred to as "sub-pixel 151." The same applies to other components.

[0012] A light-emitting element 120 is disposed in each of the multiple sub-pixels 151. Each light-emitting element 120 includes a reflective layer 105, an optical distance adjustment layer 107, an insulating layer 108, a transmissive electrode 109, an organic functional layer 111 including a light-emitting layer, a conductive plug 110, and an upper electrode 112. The substrate 101 is a base made of a semiconductor material such as silicon. An element 102, such as a transistor, is disposed on a major surface 121 of the substrate 101 to control light emission (e.g., light intensity, light emission time, etc.) in each sub-pixel 151. An interlayer insulating layer 103 is disposed on the element 102 so as to cover the major surface 121 of the substrate 101 and the element 102. A conductive layer 104, on which a wiring pattern or the like is formed, is disposed within the interlayer insulating layer 103. In the configuration shown in FIG. 1(b), one conductive layer 104 is disposed. However, the present invention is not limited to this, and two or more conductive layers 104 may be disposed on the interlayer insulating layer 103 .

[0013] A reflective layer 105 that reflects light generated in the light-emitting layer is disposed above the interlayer insulating layer 103, between the organic functional layer 111 including the light-emitting layer and the main surface 121 of the substrate 101. A metal material such as an aluminum alloy can be selected as the material for the reflective layer 105. Conductive plugs 106 are disposed between the element 102, such as the source / drain region of the transistor, and the conductive layer 104, and between the conductive layer 104 and the reflective layer 105. The conductive plugs 106 electrically connect the element 102, such as the source / drain region or gate electrode of the transistor, and the conductive layer 104, and between the conductive layer 104 and the reflective layer 105. The conductive plugs 106 are made of, for example, tungsten (W) containing a barrier metal layer such as titanium / titanium nitride (Ti / TiN).

[0014] The optical distance adjustment layer 107 may have a stacked structure composed of multiple layers 107b, 107g, and 107r. At least a portion of the optical distance adjustment layer 107 is disposed between the reflective layer 105 and the transmissive electrode 109. A portion of the optical distance adjustment layer 107 covers the peripheral portion of the transmissive electrode 109 in the sub-pixels 151b and 151g. The insulating layer 108 covers the peripheral portion of the transmissive electrode 109 and is disposed between the optical distance adjustment layer 107 and the organic functional layer 111 including the light-emitting layer between adjacent light-emitting elements 120 in each of the multiple sub-pixels 151. The optical distance adjustment layer 107 and the insulating layer 108 may be made of a dielectric material such as silicon oxide or silicon nitride.

[0015] The transmissive electrode 109 (first electrode) is disposed between the reflective layer 105 and the organic functional layer 111 including the light-emitting layer, and transmits light generated in the light-emitting layer. The transmissive electrode 109 is made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0016] The reflective layer 105 and the transmissive electrode 109 are electrically connected via a conductive plug 110. The conductive plug 110 extends from the insulating layer 108 through the optical distance adjustment layer 107 to reach the reflective layer 105 while being in electrical contact with the transmissive electrode 109. The conductive plug 110 has a surface 131 disposed on the reflective layer 105 side so as to be in contact with the reflective layer 105, and a surface 132 disposed in the insulating layer 108. The conductive plug 110 extends in a direction perpendicular to the major surface 121 of the substrate 101 so as to connect the surfaces 131 and 132. In the orthogonal projection of the conductive plug 110 onto the major surface 121 of the substrate 101, the surface 131 overlaps the surface 132. The conductive plug 110 extends from the surface 132 to the surface 131, penetrating the insulating layer 108 and the optical distance adjustment layer 107, and has a shape such that a portion of the conductive plug 110 reaches the transmissive electrode 109 and another portion of the conductive plug 110 reaches the reflective layer 105. The conductive plug 110 has a structure similar to a so-called shared contact structure. By using the conductive plug 110 with such a structure, two pre-formed layers with different depths (e.g., the transmissive electrode 109 and the reflective layer 105) can be electrically connected after the two layers are formed, simply by providing one through-hole. This structure of the conductive plug 110 can be formed using a manufacturing method described below.

[0017] Portions of the optical distance adjustment layer 107 and the insulating layer 108 disposed on the transmissive electrode 109 are etched to form openings 116 in order to bring the transmissive electrode 109 into contact with the organic functional layer 111 including a light-emitting layer. The organic functional layer 111, which includes a light-emitting layer containing a self-luminous material, is disposed above the transmissive electrode 109 and the insulating layer 108 so as to cover the transmissive electrode 109 and the insulating layer 108. Here, "above" and "upper" refer to the upward direction in FIG. 1(b), that is, the direction away from the main surface 121 of the substrate 101 in the normal direction to the main surface 121. Therefore, when it is stated that the organic functional layer 111 is disposed above the transmissive electrode 109, this means that the organic functional layer 111 is disposed at a position farther from the substrate 101 (main surface 121) than the transmissive electrode 109.

[0018] An upper electrode 112 (second electrode) is disposed above the organic functional layer 111. The upper electrode 112 may be made of a transparent conductive material, similar to the transmissive electrode 109. The transmissive electrode 109 and the upper electrode 112 function as an anode and a cathode for the organic functional layer 111, and constitute a light-emitting element. As shown in FIG. 1(b), the organic functional layer 111 and the upper electrode 112 may be shared by multiple sub-pixels 151. For example, the organic functional layer 111 and the upper electrode 112 may be integrally formed over the entire display region 201.

[0019] A sealing layer 113 is disposed above the upper electrode 112. The sealing layer 113 is made of a material such as silicon nitride. The sealing layer 113 seals each component, such as the transistors and other elements 102 formed on the substrate 101 and the organic functional layer 111, and prevents the intrusion of outside air and moisture.

[0020] Color filters 114 are disposed above the sealing layer 113 so as to correspond to the light-emitting elements 120 of each sub-pixel 151. In this embodiment, the light-emitting layer included in the organic functional layer 111 emits white light, and the color filters 114 convert the light into different colors for the sub-pixels 151b, 151g, and 151r. In this embodiment, a color filter 114b that transmits blue light is formed in the sub-pixel 151b, a color filter 114g that transmits green light is formed in the sub-pixel 151g, and a color filter 114r that transmits red light is formed in the sub-pixel 151r.

[0021] Next, a resonator structure using the optical distance adjustment layer 107 and a method for manufacturing the conductive plug 110 that electrically connects the reflective layer 105 and the transmissive electrode 109 will be described in detail with reference to Figures 2(a) to 4(b). In each of Figures 2(a) to 4(b), the components below the reflective layer 105 (closer to the main surface 121 of the substrate 101) may be the same as those in Figure 1(b). For this reason, some of the components on the substrate 101 side of the interlayer insulating layer 103 are not shown.

[0022] First, as shown in FIG. 2( a), reflective layers 105 that correspond to the light-emitting elements 120 of each of the plurality of sub-pixels 151 and reflect light generated by the light-emitting layers disposed in the organic functional layer 111 are formed on a substrate 101 on which an interlayer insulating layer 103 is formed. The reflective layers 105 are formed, for example, by depositing an AlCu film using a film-forming method such as sputtering, followed by processes such as photolithography and dry etching. Each reflective layer 105 is electrically connected to an element 102 such as a transistor of the corresponding sub-pixel 151 via a conductive plug 106. In this way, the reflective layer can be a conductor.

[0023] 2(b), a layer 107b of the optical distance adjustment layer 107 is formed on the upper surface of the reflective layer 105 using a film formation method such as CVD, and a silicon oxide film, for example. Next, an ITO film is formed on the layer 107b using a film formation method such as sputtering, and the transparent electrode 109b of the light-emitting element 120b arranged in the sub-pixel 151b is formed through processes such as photolithography and dry etching. The thickness Tb of the layer 107b of the optical distance adjustment layer 107 formed between the reflective layer 105 and the transparent electrode 109b is set so that light generated in the light-emitting layer included in the organic functional layer 111 of the light-emitting element 120b arranged in the sub-pixel 151b is reflected and resonated with the reflective layer 105, thereby most constructively combining light having a desired first peak wavelength.

[0024] After forming the transmissive electrode 109b, as shown in FIG. 2(c), the layer 107g of the optical distance adjustment layer 107 is formed to cover the transmissive electrode 109b and the layer 107b. The layer 107g may be formed of, for example, silicon oxide using a deposition method such as CVD. Next, an ITO film is formed on the layer 107g using a deposition method such as sputtering, and the transmissive electrode 109g of the light-emitting element 120g disposed in the subpixel 151g is formed through processes such as photolithography and dry etching. The thickness Tg of the layers 107b and 107g of the optical distance adjustment layer 107 formed between the reflective layer 105 and the transmissive electrode 109g is set so that light generated in the light-emitting layer included in the organic functional layer 111 of the light-emitting element 120g disposed in the subpixel 151g is reflected and resonated with the reflective layer 105, thereby most constructively interfering with light having a desired second peak wavelength different from the first peak wavelength.

[0025] After forming the transmissive electrode 109g, as shown in FIG. 3(a), the layer 107r of the optical distance adjustment layer 107 is deposited to cover the transmissive electrode 109g and the layer 107g. For example, silicon oxide may be deposited as the layer 107r using a deposition method such as a CVD method. Next, for example, an ITO film is deposited on the layer 107r using a deposition method such as a sputtering method, and the transmissive electrode 109r of the light-emitting element 120r disposed in the sub-pixel 151r is formed through a photolithography process, a dry etching process, and the like. Here, the film thickness Tr defined by the layers 107b, 107g, and 107r of the optical distance adjustment layer 107 formed between the reflective layer 105 and the transmissive electrode 109r is set so that light generated in the light-emitting layer included in the organic functional layer 111 of the light-emitting element 120r arranged in the sub-pixel 151r is reflected and resonates with the reflective layer 105, thereby most constructively enhancing light having a desired third peak wavelength different from the above-mentioned first peak wavelength and second peak wavelength. Through the above steps, the optical distance adjustment layer 107 is formed on the reflective layer 105, and the transmissive electrodes 109, which correspond to the light-emitting elements 120 of each of the multiple sub-pixels 151 and transmit the light generated in the light-emitting layer in the organic functional layer 111, are formed in or on the optical distance adjustment layer 107.

[0026] 3(b), an insulating layer 108 is formed to cover the optical distance adjustment layer 107 and the transmissive electrode 109. For example, silicon oxide may be formed as the insulating layer 108 using a film formation method such as a CVD method. The surface (upper surface) of the insulating layer 108 is planarized by a planarization process such as a CMP process.

[0027] After the surface of the insulating layer 108 is planarized, a contact hole 115 is formed through processes such as photolithography and dry etching, which extends from the insulating layer 108 through the optical distance adjustment layer 107 and reaches the reflective layer 105 while exposing a portion of the transmissive electrode 109. The contact hole 115 is opened so that it passes from the upper side of the insulating layer 108 through the insulating layer 108 and the optical distance adjustment layer 107 to reach the transmissive electrode 109, and also partially reaches the reflective layer 105.

[0028] After the contact holes 115 are formed, conductive plugs 110 are formed in the contact holes 115, as shown in FIG. 4( a). For example, a Ti / TiN barrier metal layer is formed, and then a tungsten film is deposited and filled into the contact holes 115. After the contact holes 115 are filled, a planarization process (polishing process) such as a CMP process is performed, and the conductive material, such as the tungsten film, deposited on the surface of the insulating layer 108 is polished to form the conductive plugs 110. This planarization process may polish and remove part of the surface of the insulating layer 108. However, the planarization process does not affect the optical distance adjustment layer 107, which is covered by the insulating layer 108, and the film thickness (thicknesses Tb, Tg, and Tr) of the optical distance adjustment layer 107 is maintained.

[0029] Next, an insulating layer is further formed to cover the conductive plug 110, and the conductive plug 110 is embedded therein. The insulating layer covering the conductive plug 110 may be formed of the same material as the insulating layer 108, such as silicon oxide. For this reason, in FIG. 4(b), the insulating layer covering the conductive plug 110 is shown as being integrated with the insulating layer 108. Furthermore, as shown in FIG. 4(b), an opening 116 is formed by photolithography, dry etching, and other processes to penetrate part of the insulating layer 108 and the optical distance adjustment layer 107 and expose a part of the transmissive electrode 109 other than the part where the contact hole 115 is formed. In this dry etching process, the etching rate of the insulating layer 108 and the optical distance adjustment layer 107 is set to be sufficiently higher than the etching rate of the transmissive electrode 109, and the transmissive electrode 109 may also function as an etching stopper.

[0030] Through the above steps, a resonator structure is formed in each of the subpixels 151b, 151g, and 151r, having an optical distance adjustment layer 107 defined by film thicknesses Tb, Tg, and Tr. That is, the light-emitting element 120 arranged in each of the multiple subpixels 151 includes the light-emitting element 120b of the subpixel 151b, the light-emitting element 120g of the subpixel 151g, and the light-emitting element 120r of the subpixel 151r, which have different distances between the reflective layer 105 and the transmissive electrode 109, and the optical distance adjustment layer 107 includes layers 107b, 107g, and 107r. In the light-emitting element 120b of the subpixel 151b, the layer 107b of the optical distance adjustment layer 107 is arranged between the reflective layer 105b and the transmissive electrode 109b, and the layers 107g and 107r of the optical distance adjustment layer 107 are arranged between the periphery of the transmissive electrode 109b and the insulating layer 108. In addition, in the light-emitting element 120g of the subpixel 151g, layers 107b and 107g of the optical distance adjustment layer 107 are arranged between the reflective layer 105g and the transmissive electrode 109g, and layer 107r of the optical distance adjustment layer 107 is arranged between the periphery of the transmissive electrode 109g and the insulating layer 108. Furthermore, in the light-emitting element 120r of the subpixel 151r, layers 107b, 107g, and 107r of the optical distance adjustment layer 107 are arranged between the reflective layer 105r and the transmissive electrode 109r.

[0031] Furthermore, a conductive plug 110 is formed to electrically connect the reflective layer 105 and the transmissive electrode 109. As described above, the conductive plug 106 reaches the reflective layer 105 from within the insulating layer 108 disposed on the optical distance adjustment layer 107, via the transmissive electrode 109. Therefore, the surface 132 of the conductive plug 110 can be disposed at a position farther from the main surface 121 of the substrate 101 than the transmissive electrodes 109 of any of the light-emitting elements 120 disposed in each of the multiple sub-pixels 151. Furthermore, the conductive plug 110 contacts part of the upper surface and side surface of the outer edge portion of the transmissive electrode 109.

[0032] After forming the openings 116, an organic functional layer 111 including a light-emitting layer is formed by vacuum deposition using a deposition mask having openings of a desired pattern, so as to be in contact with the portion of the transmissive electrode 109 exposed by the openings 116. Furthermore, an upper electrode 112 disposed on the organic functional layer 111, a sealing layer 113 disposed on the upper electrode 112, and a color filter 114 disposed on the sealing layer 113 are each formed using a desired process. Through these processes, a light-emitting device 100 is formed in which pixels 150, each of which includes sub-pixels 151 (light-emitting elements 120) arranged in a display region 201, are provided, as shown in FIG. 1(b).

[0033] According to the structure in which the reflective layer 105 and the transmissive electrode 109 are connected by the conductive plug 110 of this embodiment, it is possible to avoid a decrease in the film thickness of the optical distance adjustment layer 107 due to a planarization process (polishing process) such as CMP when forming the conductive plug 110. That is, if a via is provided in the underlying optical distance adjustment layer 107 to form a plug before forming the transmissive electrode 109, and then the transmissive electrode 109 is formed on the plug, a planarization process such as CMP must be performed to planarize the upper surface of the underlying layer on which the transmissive electrode 109 is formed. However, according to the conductive plug 110 of this embodiment, the conductive plug can be formed after the transmissive electrode 109 is formed, so there is no need to perform a planarization process such as CMP after forming the optical distance adjustment layer 107. Therefore, it is possible to easily form the optical distance adjustment layers 107b, 107g, and 107r having the desired film thicknesses Tb, Tg, and Tr suitable for the light-emitting elements 120b, 120g, and 120r of the respective subpixels 151b, 151g, and 151r. As a result, the light emitting efficiency and color purity of the light emitting device 100 can be improved.

[0034] Furthermore, a contact hole 115 is formed that penetrates the insulating layer 108 and the optical distance adjustment layer 107 to reach the transmissive electrode 109 and partially reaches the reflective layer 105, and a conductive plug 110 is formed in this contact hole 115. By using such a configuration, the reflective layer 105 and the transmissive electrode 109 can be electrically connected to each other while preventing connection failures, without excessively overlapping the conductive plug 110 with the reflective layer 105 and the transmissive electrode 109. In other words, it becomes easier to miniaturize the pixels 150 (sub-pixels 151). As a result, the light-emitting device 100 can have a higher resolution.

[0035] A modification of the light-emitting device 100 described above will be described with reference to FIG. 5. In the light-emitting device 100 shown in FIG. 5, each of the light-emitting elements 120 arranged in each of the multiple subpixels 151 includes a reflective layer 105 and a conductive member 205 arranged in the same layer as the reflective layer 105. The reflective layer 105 and the conductive member 205 are electrically isolated. In the example shown in FIG. 5, the conductive member 205 is electrically connected to the conductive plug 106 below, but the reflective layer 105 is not electrically connected to the layers below it and is floating. The reflective layer 105 may be electrically connected to another layer below it by a conductive member other than the conductive plug 106. The conductive member 205 can be formed by forming the reflective layer 105, as shown in FIG. 2(a), and then electrically isolating the portion of the reflective layer 105 connected to the conductive plug 106 from the other portions of the reflective layer 105. As a result, the portion connected to the conductive plug 106 becomes the conductive member 205, and the other portion becomes the reflective layer 105. The upper surface of the reflective layer 105 and the upper surface of the conductive member 205 are flush with each other.

[0036] In this modification, the conductive plug 110 is also formed to extend from the insulating layer 108, pass through the optical distance adjustment layer 107, and reach the height of the upper surface of the reflective layer 105 while being in electrical contact with the transmissive electrode 109. The conductive plug 110 may be in direct contact with the conductive plug 106 without providing the conductive member 205. That is, the conductive plug 110 may be formed to extend so as to reach the lower surface of the reflective layer 105.

[0037] Other modifications of the above-described light emitting device 100 will be described with reference to Figs. 6 to 8. As shown in Fig. 6, the light emitting device 100 includes a display area 201 in which a plurality of pixels 150 are arranged in a two-dimensional array, and a peripheral circuit area 202 that controls the writing operation of pixel signals of an image to be displayed in the display area 201. Here, the central part of the display area 201 is designated as a display area 201C. Also, the area closer to the outer edge of the display area 201 than the display area 201C and on the left side in Fig. 6 is designated as a display area 201L, and the area closer to the outer edge of the display area 201 than the display area 201C is designated as a display area 201R.

[0038] 1(b), in this embodiment, in addition to the configuration shown in FIG. 1(b), a microlens 301 is further arranged in each of the multiple subpixels 151 at a position farther from the main surface 121 of the substrate 101 than the organic functional layer 111 including the light-emitting layer. The microlens 301 is arranged on the color filter 114. In other words, the color filter 114 is arranged between the microlens 301 and the organic functional layer 111 including the light-emitting layer. Here, in each of FIGS. 6 to 8, the components below the reflective layer 105 (closer to the main surface 121 of the substrate 101) may be the same as those in FIG. 1(b). For this reason, the components on the substrate 101 side of the interlayer insulating layer 103 are not shown.

[0039] The microlens 301 is formed, for example, from a transparent resin in a hemispherical or teardrop shape. The microlens 301 converges light emitted from the light-emitting layer included in the organic functional layer 111 and having different peak wavelengths due to the resonator structures of the light-emitting elements 120b, 120g, and 120r of the subpixels 151b, 151g, and 151r. To form the microlens 301, first, a film of transparent resin is formed using an appropriate method, such as a coating method. Next, the transparent resin is molded into a desired pattern using a photolithography process or the like, and the patterned transparent resin is fluidized by heat treatment, thereby forming the microlens 301.

[0040] Furthermore, in this embodiment, in a portion of the display region 201, the subpixels 151 are formed such that the centers of the color filters 114 and microlenses 301 are misaligned relative to the centers of the corresponding transmissive electrodes 109. Here, the "center" of the transmissive electrode 109 may be the geometric center of gravity of the transmissive electrode 109 in orthogonal projection onto the main surface 121 of the substrate 101. When the transmissive electrode 109 has, for example, a rectangular shape in orthogonal projection onto the main surface 121 of the substrate 101, the intersection of two diagonals is the center. The same applies to the color filters 114 and the microlenses 301.

[0041] Specifically, in a display region 201C in the center of the display region 201, as shown in Fig. 7(a), the centers of the transmissive electrodes 109 of the light-emitting elements 120 of each sub-pixel 151 of the pixel 150C are aligned with the centers of the corresponding color filters 114 and microlenses 301. On the other hand, in pixels 150L and 150R arranged in display regions 201L and 201R near the outer edges of the display region 201, as shown in Fig. 7(b) and Fig. 8, the centers of the transmissive electrodes 109 of the light-emitting elements 120 of each sub-pixel 151 of the pixels 150L and 150R are aligned with the centers of the corresponding color filters 114 and microlenses 301.

[0042] More specifically, pixel 150 includes pixel 150C (shown in Figure 7(a)) arranged in display area 201C in the center of display area 201, and pixels 150L and 150R (shown in Figures 7(b) and 8) arranged in positions (display areas 201L and 201R) closer to the outer edge of display area 201 in which multiple pixels 150 are arranged than pixel 150C. Here, in orthogonal projection onto the main surface 121 of the substrate 101, the distance between the center of the transmissive electrode 109 of the light-emitting element 120 arranged in the subpixel 151 of the pixels 150L and 150R and the center of the microlens 301 of the light-emitting element 120 arranged in the subpixel 151 of the pixels 150L and 150R is larger than the distance between the center of the transmissive electrode 109 of the light-emitting element 120 arranged in the subpixel 151 of the pixel 150C and the center of the microlens 301 of the light-emitting element 120 arranged in the subpixel 151 of the pixel 150C. In this case, as shown in Figures 7(b) and 8, in the light-emitting element 120 arranged in the subpixel 151 of the pixels 150L and 150R, the center of the microlens 301 is shifted from the center of the transmissive electrode 109 in a direction from the center of the display region 201 toward the outer edge of the display region 201. 6 and 7(b), in the light-emitting element 120 disposed in the sub-pixel 151 of the pixel 150L disposed in the display region 201L, which is a region to the left of the display region 201C, the center of the microlens 301 is shifted to the left of the center of the transmissive electrode 109. Similarly, as shown in FIGS. 6 and 8, in the light-emitting element 120 disposed in the sub-pixel 151 of the pixel 150R disposed in the display region 201R, which is a region to the right of the display region 201C, the center of the microlens 301 is shifted to the right of the center of the transmissive electrode 109. In each of the light-emitting elements 120 disposed in the sub-pixels 151, the distance (shift amount) between the center of the transmissive electrode 109 and the center of the corresponding microlens 301 in orthogonal projection onto the main surface 121 of the substrate 101 may increase continuously or stepwise from the center of the display region 201 toward the outer edge of the display region 201.

[0043] Similarly, in orthogonal projection onto the main surface 121 of the substrate 101, the distance between the center of the transmissive electrode 109 of the light-emitting element 120 arranged in the subpixel 151 of the pixels 150L and 150R and the center of the color filter 114 of the light-emitting element 120 arranged in the subpixel 151 of the pixels 150L and 150R may be greater than the distance between the center of the transmissive electrode 109 of the light-emitting element 120 arranged in the subpixel 151 of the pixel 150C and the center of the color filter 114 of the light-emitting element 120 arranged in the subpixel 151 of the pixel 150C. In this case, as shown in Figures 7(b) and 8, in the light-emitting element 120 arranged in the subpixel 151 of the pixels 150L and 150R, the center of the color filter 114 is shifted from the center of the transmissive electrode 109 in a direction from the center of the display region 201 toward the outer edge of the display region 201. 6 and 7(b), in the light-emitting element 120 arranged in the sub-pixel 151 of the pixel 150L arranged in the display region 201L, which is an area to the left of the display region 201C, the center of the color filter 114 is shifted to the left of the center of the transmissive electrode 109. Similarly, as shown in FIGS. 6 and 8, in the light-emitting element 120 arranged in the sub-pixel 151 of the pixel 150R arranged in the display region 201R, which is an area to the right of the display region 201C, the center of the color filter 114 is shifted to the right of the center of the transmissive electrode 109. In each of the light-emitting elements 120 arranged in the sub-pixels 151, the distance (amount of shift) between the center of the transmissive electrode 109 and the center of the corresponding color filter 114 in orthogonal projection onto the main surface 121 of the substrate 101 may increase continuously or stepwise from the center of the display region 201 toward the outer edge of the display region 201.

[0044] Here, in each of the plurality of light-emitting elements 120, the distance (shift amount) between the center of the transmissive electrode 109 and the center of the corresponding color filter 114 in orthogonal projection onto the main surface 121 of the substrate 101 may be equal to or less than the distance between the center of the transmissive electrode 109 and the center of the corresponding microlens 301 in orthogonal projection onto the main surface 121 of the substrate 101. This is because the color filter 114 is disposed between the transmissive electrode 109 and the microlens 301 with respect to light from the light-emitting layer of the organic functional layer 111. Furthermore, in each of the plurality of subpixels 151, the center of the microlens 301 and the center of the corresponding color filter 114 may be at the same position in orthogonal projection onto the main surface 121 of the substrate 101. This is because the distance from the microlens 301 to the color filter 114 is shorter than the distance from the transmissive electrode 109 to the color filter 114 and the microlens 301.

[0045] As described above, the center positions of the color filters 114 and the microlenses 301 are shifted from the center of the transmissive electrode 109 in the direction away from the center to the outer edge of the display region 201. With this configuration, the light-emitting device 100 can emit light with a wide angle as indicated by the arrows in Figures 7(b) and 8, thereby achieving wider viewing angle characteristics.

[0046] 7(b) and 8, the conductive plug 110 may be in contact with the transmissive electrode 109 at a portion of the periphery of the transmissive electrode 109 that is close to the center of the display region 201 in the orthogonal projection onto the major surface 121 of the substrate 101. Here, the portion of the transmissive electrode 109 that is close to the center of the display region 201 may be a region that has an area that is half the area of ​​the transmissive electrode 109 on the central side of the display region 201 in the orthogonal projection onto the major surface 121 of the substrate 101. For example, when the transmissive electrode 109 has a substantially rectangular shape, this portion may be a side of the transmissive electrode 109 that is disposed on the central side of the display region 201.

[0047] As shown in FIGS. 6 and 7(b), in the light-emitting element 120 disposed in the sub-pixel 151 of the pixel 150L disposed in the display region 201L, which is a region to the left of the display region 201C, the conductive plug 110 is disposed on the right side of the transmissive electrode 109, closer to the center of the display region 201. Similarly, as shown in FIGS. 6 and 8, in the light-emitting element 120 disposed in the sub-pixel 151 of the pixel 150R disposed in the display region 201R, which is a region to the left of the display region 201C, the conductive plug 110 is disposed on the left side of the transmissive electrode 109, closer to the center of the display region 201. In this manner, the conductive plug 110 is disposed in a position opposite to the direction in which the centers of the color filter 114 and the microlens 301 are shifted relative to the center of the transmissive electrode 109. This arrangement prevents vignetting of light spreading toward the wide-angle side by the conductive plug 110, making it possible to suppress deterioration of wide viewing angle characteristics.

[0048] 6 to 8, an example has been described in which display area 201 is divided into three areas: display area 201C in the center, and display areas 201L and 201R located to the left and right of display area 201C, but the present invention is not limited to this. It is possible to divide display area 201 into a plurality of areas and apply the direction and amount of shift appropriately according to the relative positions from the center of display area 201 toward the outer edge.

[0049] 9(a) to 17(b), application examples in which the light-emitting device 100 of this embodiment is applied to an image forming device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described. First, details and modifications of each component of the light-emitting device 100 will be shown, and then application examples will be described. In the following description, the configuration of the light-emitting element 120 including the above-mentioned transmissive electrode 109, the organic functional layer 111, and the upper electrode 112 will sometimes be referred to as an organic light-emitting element.

[0050] The organic light-emitting element of this embodiment has at least a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first electrode and the second electrode is an anode and the other is a cathode. In the organic light-emitting element of this embodiment, the organic compound layer may be a single layer or a laminate consisting of multiple layers, as long as it has an emitting layer. Here, when the organic compound layer is a laminate consisting of multiple layers, the organic compound layer may have, in addition to the emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole / exciton blocking layer, an electron transport layer, an electron injection layer, etc. Furthermore, the emitting layer may be a single layer or a laminate consisting of multiple layers.

[0051] In the organic light-emitting device of this embodiment, at least one of the organic compound layers contains the organometallic complex of this embodiment. Specifically, the organic compound of this embodiment is contained in any of the above-mentioned light-emitting layer, hole injection layer, hole transport layer, electron blocking layer, hole / exciton blocking layer, electron transport layer, electron injection layer, etc. The organic compound of this embodiment is preferably contained in the light-emitting layer.

[0052] In the organic light-emitting device of this embodiment, when the organic compound according to this embodiment is contained in the light-emitting layer, the light-emitting layer may be a layer consisting solely of the organic compound according to this embodiment, or may be a layer consisting of the organometallic complex according to this embodiment and other compounds. Here, when the light-emitting layer is a layer consisting of the organometallic complex according to this embodiment and other compounds, the organic compound according to this embodiment may be used as a host or a guest in the light-emitting layer. It may also be used as an assist material that can be contained in the light-emitting layer. Here, the host is the compound with the largest mass ratio among the compounds constituting the light-emitting layer. The guest is a compound that is smaller in mass ratio than the host among the compounds constituting the light-emitting layer and is responsible for the primary emission of light. The assist material is a compound that is smaller in mass ratio than the host among the compounds constituting the light-emitting layer and assists the guest in emitting light. The assist material is also called a second host. The host material can also be called a first compound, and the assist material can also be called a second compound.

[0053] When the organic compound according to this embodiment is used as a guest in the light-emitting layer, the concentration of the guest is preferably 0.01% by mass or more and 20% by mass or less, and more preferably 0.1% by mass or more and 10% by mass or less, based on the total mass of the light-emitting layer.

[0054] The present inventors have conducted various studies and found that when the organic compound according to this embodiment is used as a host or guest in the light-emitting layer, particularly as a guest in the light-emitting layer, a device exhibiting high efficiency and high luminance light output and extremely high durability can be obtained. This light-emitting layer may be a single layer or multiple layers, and it is also possible to mix the red light emitted by this embodiment with a light-emitting material having another light-emitting color. "Multiple layers" refers to a state in which the light-emitting layer and another light-emitting layer are stacked. In this case, the light-emitting color of the organic light-emitting element is not limited to red. More specifically, it may be white or a neutral color. In the case of white, the other light-emitting layer emits a color other than red, i.e., blue or green. Furthermore, the film is formed by vapor deposition or coating. Details of this will be explained in detail in the examples below.

[0055] The organometallic complex according to this embodiment can be used as a constituent material of an organic compound layer other than the light-emitting layer that constitutes the organic light-emitting device of this embodiment. Specifically, it may be used as a constituent material of an electron transport layer, an electron injection layer, a hole transport layer, a hole injection layer, a hole blocking layer, etc. In this case, the emission color of the organic light-emitting device is not limited to red. More specifically, it may emit white light or an intermediate color.

[0056] In addition to the organic compound according to this embodiment, conventionally known low-molecular-weight and high-molecular-weight hole-injecting or hole-transporting compounds, host compounds, light-emitting compounds, electron-injecting or electron-transporting compounds, etc. may also be used together as needed. Examples of these compounds are listed below.

[0057] As the hole injection and transport material, a material with high hole mobility is preferred so that holes can be easily injected from the anode and the injected holes can be transported to the light-emitting layer. Furthermore, a material with a high glass transition temperature is preferred to suppress deterioration of film quality, such as crystallization, in organic light-emitting devices. Examples of low-molecular-weight and high-molecular-weight materials with hole injection and transport properties include triarylamine derivatives, arylcarbazole derivatives, phenylenediamine derivatives, stilbene derivatives, phthalocyanine derivatives, porphyrin derivatives, poly(vinylcarbazole), poly(thiophene), and other conductive polymers. Furthermore, the above-mentioned hole injection and transport materials are also suitable for use in electron blocking layers. Specific examples of compounds that can be used as hole injection and transport materials are listed below, but the present invention is not limited to these.

[0058] [ka]

[0059] Among the hole transport materials listed above, HT16 to HT18 can reduce the driving voltage when used in a layer in contact with the anode. HT16 is widely used in organic light-emitting devices. HT2, HT3, HT4, HT5, HT6, HT10, and HT12 may be used in an organic compound layer adjacent to HT16. Furthermore, multiple materials may be used in one organic compound layer.

[0060] Examples of light-emitting materials that are mainly involved in light-emitting function include fused ring compounds (for example, fluorene derivatives, naphthalene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, anthracene derivatives, rubrene, etc.), quinacridone derivatives, coumarin derivatives, stilbene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, iridium complexes, platinum complexes, rhenium complexes, copper complexes, europium complexes, ruthenium complexes, and polymer derivatives such as poly(phenylenevinylene) derivatives, poly(fluorene) derivatives, and poly(phenylene) derivatives.

[0061] Specific examples of compounds that can be used as light-emitting materials are shown below, but the present invention is not limited to these.

[0062] [ka]

[0063] [ka]

[0064] When the light-emitting material is a hydrocarbon compound, it is preferable because it can reduce a decrease in light-emitting efficiency due to exciplex formation and a decrease in color purity due to a change in the emission spectrum of the light-emitting material due to exciplex formation.

[0065] Hydrocarbon compounds are compounds composed only of carbon and hydrogen, and among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are mentioned.

[0066] When the light-emitting material is a fused polycyclic ring containing a five-membered ring, it is preferable because it has a high ionization potential, is resistant to oxidation, and results in a device with a long and durable life. Among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are preferred.

[0067] Examples of the light-emitting layer host or light-emitting assist material contained in the light-emitting layer include aromatic hydrocarbon compounds or derivatives thereof, as well as carbazole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, and organic beryllium complexes.

[0068] Specific examples of compounds that can be used as the light-emitting layer host or light-emitting assist material contained in the light-emitting layer are shown below, but the present invention is not limited to these.

[0069] [ka]

[0070] When the host material is a hydrocarbon compound, the compound of the present invention is more likely to trap electrons and holes, which is advantageous in terms of improving efficiency. Hydrocarbon compounds are compounds composed only of carbon and hydrogen, and among the above-mentioned exemplary compounds, EM1 to EM12 and EM16 to EM27 are preferred.

[0071] The electron transporting material can be arbitrarily selected from those capable of transporting electrons injected from the cathode to the light-emitting layer, and is selected taking into consideration the balance with the hole mobility of the hole transporting material, etc. Examples of materials having electron transport properties include oxadiazole derivatives, oxazole derivatives, pyrazine derivatives, triazole derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, organoaluminum complexes, and fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, chrysene derivatives, anthracene derivatives, etc.). Furthermore, the above electron transporting materials are also suitable for use in hole-blocking layers.

[0072] Specific examples of compounds that can be used as electron transporting materials are shown below, but the present invention is not limited to these.

[0073] [ka]

[0074] The electron injection material can be selected from those that allow easy electron injection from the cathode, taking into consideration the balance with hole injection properties, etc. Organic compounds include n-type dopants and reducing dopants. Examples include compounds containing alkali metals such as lithium fluoride, lithium complexes such as lithium quinolinol, benzimidazolidene derivatives, imidazolidene derivatives, fulvalene derivatives, and acridine derivatives.

[0075] It can also be used in combination with the above electron transporting material.

[0076] The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer. The planarizing layer may be made of acrylic resin or the like. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0077] Examples of the substrate include quartz, glass, a silicon wafer, a resin, and a metal. Furthermore, the substrate may be provided with a switching element such as a transistor and wiring, and an insulating layer thereon. Any material can be used for the insulating layer, as long as it allows for the formation of a contact hole so that wiring can be formed between the first electrode and the insulating layer, and ensures insulation from wiring that is not connected. For example, resins such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0078] A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0079] The anode material should have as high a work function as possible. Examples include simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0080] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0081] When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. When used as a transparent electrode, transparent conductive oxide layers such as indium tin oxide (ITO) and indium zinc oxide can be used, but are not limited to these. Photolithography techniques can be used to form the electrode.

[0082] On the other hand, materials with a low work function are preferred for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and metals such as aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these metals can be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials can be used alone or in combination. The cathode can have either a single-layer or multi-layer structure. Among these, silver is preferred, and a silver alloy is even more preferred to reduce silver aggregation. The alloy ratio is not critical as long as silver aggregation can be reduced. For example, the silver:other metal ratio can be 1:1, 3:1, or the like.

[0083] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but DC and AC sputtering methods are more preferred because they provide good film coverage and make it easier to reduce resistance.

[0084] The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are included, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, or electron injection layer depending on their functions. The organic compound layer is mainly composed of organic compounds but may also contain inorganic atoms or inorganic compounds. For example, the organic compound layer may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0085] A protective layer may be provided on the cathode. For example, by adhering glass with a moisture absorbent on the cathode, the intrusion of water and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride film may be formed by CVD to serve as a protective layer. A protective layer may be provided using atomic layer deposition (ALD) after the CVD film formation. The material of the film formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed on the film formed by ALD by CVD. The film formed by ALD may have a thickness smaller than that of the film formed by CVD. Specifically, the thickness may be 50% or less, or even 10% or less.

[0086] A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on a separate substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using photolithography technology. The color filter may be made of a polymer.

[0087] A planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the underlying layer. It may also be called a material resin layer without limiting its purpose. The planarization layer may be composed of an organic compound, and may be either a low molecular weight or a high molecular weight, but a high molecular weight is preferred.

[0088] The planarizing layer may be provided above or below the color filter, and may be made of the same or different materials, such as polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0089] The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be used to increase the amount of light extracted from the organic light-emitting device and to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0090] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0091] An opposing substrate may be provided on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The constituent material of the opposing substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0092] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting device according to one embodiment of the present invention are formed by the method shown below.

[0093] The organic compound layer constituting the organic light-emitting device according to one embodiment of the present invention can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (for example, spin coating, dipping, casting, LB method, inkjet method, etc.).

[0094] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining with an appropriate binder resin.

[0095] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0096] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, if necessary.

[0097] The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0098] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0099] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0100] The transistors that make up the pixel circuit are transistors connected to light-emitting elements such as the first light-emitting element.

[0101] An organic light emitting device includes a plurality of pixels, each of which includes sub-pixels that emit different colors, for example, RGB colors.

[0102] The pixel emits light from an area called the pixel aperture. This area is the same as the first area. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0103] The distance between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0104] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0105] The organic light-emitting device according to one embodiment of the present invention can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, a light-emitting device having a white light source and a color filter, etc.

[0106] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0107] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0108] Next, the light emitting device according to this embodiment will be described with reference to the drawings.

[0109] 9(a) and 9(b) are cross-sectional views showing an example of a light-emitting device having an organic light-emitting element and a transistor connected to the organic light-emitting element. The transistor is an example of an active element. The transistor may be a thin-film transistor (TFT).

[0110] FIG. 9(a) shows an example of a pixel, which is a component of the light-emitting device according to this embodiment. The pixel includes sub-pixels 810. The sub-pixels are divided into 810R, 810G, and 810B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel includes a reflective electrode 802 as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the edges of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 as a second electrode, a protective layer 806, and a color filter 807.

[0111] A transistor and a capacitor element may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).

[0112] The insulating layer 803 is also called a bank or pixel separation film. It covers the edges of the first electrode and surrounds the first electrode. The part where the insulating layer is not provided contacts the organic compound layer 804 and becomes the light-emitting region.

[0113] The organic compound layer 804 includes a hole injection layer 841 , a hole transport layer 842 , a first light-emitting layer 843 , a second light-emitting layer 844 , and an electron transport layer 845 .

[0114] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0115] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0116] The color filters 807 are divided into 807R, 807G, and 807B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be provided on the color filters. The color filters may be formed on a protective layer 806. Alternatively, the color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0117] The light-emitting device 800 in Fig. 9(b) includes an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 made of glass, silicon, or the like is provided with an insulating layer 812 on top of it. An active element such as the TFT 818 is disposed on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are disposed on top of the insulating layer. The TFT 818 also includes the semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on top of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and the source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0118] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Figure 9(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0119] 9(b) shows the organic compound layer as a single layer in the light-emitting device 800, but the organic compound layer 822 may be a multi-layer structure. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0120] Although the light emitting device 800 in FIG. 9(b) uses a transistor as a switching element, other switching elements may be used instead.

[0121] In addition, the transistor used in the light-emitting device 800 in Fig. 9(b) is not limited to a transistor using a single-crystalline silicon wafer, and may be a thin-film transistor having an active layer on an insulating surface of a substrate. Examples of the active layer include non-single-crystalline silicon such as single-crystalline silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystalline oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Note that the thin-film transistor is also called a TFT element.

[0122] The transistor included in the light-emitting device 800 in Fig. 9(b) may be formed in a substrate such as a Si substrate. Here, forming in the substrate means manufacturing a transistor by processing the substrate itself such as a Si substrate. That is, having a transistor in the substrate can also be regarded as the substrate and the transistor being integrally formed.

[0123] The organic light-emitting element according to this embodiment is controlled in light-emitting luminance by a TFT which is an example of a switching element, and an image can be displayed by the respective light-emitting luminances by providing the organic light-emitting elements in a plurality of planes. Note that the switching element according to this embodiment is not limited to a TFT, and may be a transistor formed of low-temperature polysilicon or an active matrix driver formed on a substrate such as a Si substrate. "On the substrate" can also mean "in the substrate". Whether to provide a transistor in the substrate or use a TFT is selected according to the size of the display portion. For example, if the size is about 0.5 inches, an organic light-emitting element may be provided on a Si substrate.

[0124] Figs. 10(a) to 10(c) are schematic diagrams showing an example of an image forming apparatus using the light-emitting device 100 of this embodiment. The image forming apparatus 926 shown in Fig. 10(a) includes a photoreceptor 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transferrer 932, a conveying unit 933 (in the configuration of Fig. 10(a), a conveying roller), and a fixing unit 935.

[0125] Light 929 is emitted from an exposure light source 928, and an electrostatic latent image is formed on the surface of a photoconductor 927. The light emitting device 100 of this embodiment can be applied to this exposure light source 928. A developing unit 931 contains toner or the like as a developer and can function as a developing device that applies the developer to the exposed photoconductor 927. A charging unit 930 charges the photoconductor 927. A transfer unit 932 transfers the developed image to a recording medium 934. A transport unit 933 transports the recording medium 934. The recording medium 934 can be, for example, paper or film. A fixing unit 935 fixes the image formed on the recording medium.

[0126] 10(b) and 10(c) are schematic diagrams showing an exposure light source 928 in which a plurality of light-emitting units 936 are arranged along the longitudinal direction of a long substrate. The light-emitting device 100 of this embodiment can be applied to this light-emitting unit 936. That is, the light-emitting elements 120 arranged in the sub-pixels 151 of a plurality of pixels 150 arranged in the display region 201 are arranged along the longitudinal direction of the substrate. A direction 937 is parallel to the axis of the photoconductor 927. This column direction is the same as the axial direction of the photoconductor 927 when it rotates. This direction 937 can also be called the long axis direction of the photoconductor 927.

[0127] FIG. 10(b) shows a configuration in which the light-emitting units 936 are arranged along the longitudinal direction of the photoconductor 927. FIG. 10(c) shows a modified configuration of the arrangement of the light-emitting units 936 shown in FIG. 10(b), in which the light-emitting units 936 are arranged alternately in the column direction in the first and second columns. The light-emitting units 936 are arranged at different positions in the row direction in the first and second columns. In the first column, multiple light-emitting units 936 are arranged at intervals, and in the second column, light-emitting units 936 are arranged at positions corresponding to the gaps between the light-emitting units 936 in the first column. Multiple light-emitting units 936 are also arranged at intervals in the row direction. The arrangement of the light-emitting units 936 shown in FIG. 10(c) can be described as, for example, a grid-like arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0128] FIG. 11 is a schematic diagram illustrating an example of a display device using the light-emitting device 100 of this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected to flexible printed circuits FPCs 1002 and 1004. Active elements such as transistors are disposed on the circuit board 1007. The battery 1008 may not be disposed if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be disposed in this position. The light-emitting device 100 of this embodiment can be applied to the display panel 1005. The display region 201 of the light-emitting device 100, which functions as the display panel 1005, is connected to and operates with active elements such as transistors disposed on the circuit board 1007.

[0129] The display device 1000 shown in Fig. 11 may be used as a display unit of a photoelectric conversion device (image capture device) having an optical unit with multiple lenses and an image capture element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the image capture element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device or a display unit located within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0130] FIG. 12 is a schematic diagram illustrating an example of a photoelectric conversion device using the light-emitting device 100 of this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The light-emitting device 100 of this embodiment can be applied to the viewfinder 1101, which is a display unit. In this case, the light-emitting device 100 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0131] Since the timing suitable for capturing an image is often very short, it is better to display information as soon as possible. Therefore, a light-emitting device 100 containing an organic light-emitting material such as an organic EL element in its light-emitting layer can be used in the viewfinder 1101. This is because organic light-emitting materials have a fast response speed. A light-emitting device 100 using an organic light-emitting material is more suitable than a liquid crystal display device for such devices, which require a high display speed.

[0132] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0133] The light emitting device 100 may be applied to a display unit of an electronic device. In this case, the light emitting device 100 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0134] FIG. 13 is a schematic diagram showing an example of an electronic device using the light-emitting device 100 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to perform unlocking or the like. A portable device having a communication unit can also be called a communication device. The light-emitting device 100 of this embodiment can be applied to the display unit 1201.

[0135] 14(a) and 14(b) are schematic diagrams illustrating an example of a display device using the light-emitting device 100 of this embodiment. FIG. 14(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device 100 of this embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 14(a). For example, the bottom edge of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0136] FIG. 14(b) is a schematic diagram illustrating another example of a display device using the light-emitting device 100 of this embodiment. The display device 1310 of FIG. 14(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 100 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display unit without any joints. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit 1312 may display a single image.

[0137] FIG. 15 is a schematic diagram illustrating an example of a lighting device using the light-emitting device 100 of this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting device 100 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source, such as for lighting up, and deliver the light over a wide area. If necessary, a cover may be provided on the outermost part. The lighting device 1400 may include both the optical film 1404 and the light diffusion unit 1405, or only one of them.

[0138] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device 1400 may have a power supply circuit connected to the light emitting device 100 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. White has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat sink. The heat sink dissipates heat from within the device to the outside, and examples of the heat sink include metal with a high specific heat, liquid silicon, etc.

[0139] FIG. 16 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light emitting device 100 of this embodiment. The automobile 1500 may have a tail lamp 1501 that is turned on when the brakes are applied, for example. The light emitting device 100 of this embodiment may be used as a headlamp as a vehicle lamp. An automobile is an example of a mobile body, and the mobile body may be a ship, a drone, an aircraft, a railroad vehicle, an industrial robot, or the like. The mobile body may have a body and a lamp provided thereon. The lamp may indicate the current location of the body.

[0140] The light emitting device 100 of this embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the light emitting device 100 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but may be made of polycarbonate or the like. The protective member may also be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0141] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display. The light-emitting device 100 of this embodiment may be used in the transparent display. In this case, the constituent materials of the electrodes and the like of the light-emitting device 100 are made of transparent materials.

[0142] 17(a) and 17(b), a further application example of the light emitting device 100 of this embodiment will be described. The light emitting device 100 can be applied to systems that can be worn as a wearable device, such as smart glasses, a head-mounted display (HMD), or smart contact lenses. An image capturing and displaying device used in such an application example has an image capturing device capable of photoelectrically converting visible light and a light emitting device capable of emitting visible light.

[0143] 17(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, the light emitting device 100 of this embodiment is provided on the back side of the lens 1601.

[0144] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the light emitting device 100 according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the light emitting device 100. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0145] FIG. 17(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 and a light-emitting device 100. A lens 1611 includes an optical system for projecting light emitted from the imaging device in the control device 1612 and the light-emitting device 100, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the light-emitting device 100 and controls the operation of the imaging device and the light-emitting device 100. The control device 1612 may also include a gaze detection unit that detects the gaze of the wearer. Infrared light may be used for gaze detection. The infrared light-emitting unit emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit having a light-receiving element detects the emitted infrared light reflected from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction means for reducing the amount of light from the infrared light emitting section to the display section in a plan view, degradation of image quality is reduced.

[0146] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using an image of the eyeball. One example is a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea.

[0147] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0148] The light emitting device 100 according to one embodiment of the present invention may have an imaging device having a light receiving element, and may control the display image based on information about the user's line of sight from the imaging device.

[0149] Specifically, the light emitting device 100 determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the light emitting device 100, or may be determined by an external control device and received. In the display area of ​​the light emitting device 100, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0150] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the light-emitting device 100, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0151] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the actual direction in which the eyeball in the image was looking. The AI ​​program may be included in the light-emitting device 100, the imaging device, or an external device. If included in an external device, it is transmitted to the light-emitting device 100 via communication.

[0152] When display control is performed based on visual recognition detection, the smart glasses can be preferably applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0153] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0154] 100: light emitting device, 101: substrate, 105: reflective layer, 107: optical distance adjustment layer, 108: insulating layer, 109: transparent electrode, 110: conductive plug, 120: light emitting element, 121: main surface

Claims

1. A light emitting device having a plurality of light emitting elements arranged on a main surface of a substrate, each of the plurality of light-emitting elements includes a light-emitting layer; a reflective layer disposed between the light-emitting layer and a main surface of the substrate and configured to reflect light generated by the light-emitting layer; a first electrode disposed between the reflective layer and the light-emitting layer; and an optical distance adjustment layer disposed between the reflective layer and the first electrode; the plurality of light-emitting elements include a first light-emitting element and a second light-emitting element arranged adjacent to each other, an insulating layer is disposed on each of a peripheral portion of the first electrode of the first light-emitting element and a peripheral portion of the first electrode of the second light-emitting element, and between the optical distance adjustment layer and the light-emitting layer between the first light-emitting element and the second light-emitting element; In the first light-emitting element, a conductive plug is disposed, the conductive plug passing through the optical distance adjustment layer from the insulating layer and electrically contacting the first electrode and extending to a height of an upper surface of the reflective layer; the conductive plug has a first surface disposed on the reflective layer side and a second surface disposed in the insulating layer; The light emitting device, wherein the second surface is disposed at a position farther from the main surface than the first electrode of the first light emitting element and the first electrode of the second light emitting element.

2. the conductive plug extends in a direction perpendicular to the main surface so as to connect the first surface and the second surface, The light emitting device according to claim 1 , wherein the first surface overlaps the second surface in an orthogonal projection onto the main surface.

3. 3. The light emitting device according to claim 1, wherein a microlens is disposed at a position farther from the main surface than the light emitting layer in each of the first light emitting element and the second light emitting element.

4. the plurality of light-emitting elements include a third light-emitting element disposed at a position closer to an outer edge of a display area in which the plurality of light-emitting elements are disposed than the first light-emitting element, In the third light-emitting element, a microlens is disposed at a position farther from the main surface than the light-emitting layer, 4. The light-emitting device of claim 3, wherein in an orthogonal projection onto the main surface, the distance between the center of the first electrode of the third light-emitting element and the center of the microlens corresponding to the third light-emitting element is greater than the distance between the center of the first electrode of the first light-emitting element and the center of the microlens corresponding to the first light-emitting element.

5. The light-emitting device according to claim 4, characterized in that in the third light-emitting element, the center of the microlens corresponding to the third light-emitting element is shifted from the center of the first electrode in a direction from the center of the display area toward the outer edge of the display area.

6. The light-emitting device according to claim 4 or 5, characterized in that in each of the plurality of light-emitting elements, the distance between the center of the first electrode in orthogonal projection onto the main surface and the center of the corresponding microlens increases continuously or stepwise as it moves from the center of the display area toward the outer edge of the display area.

7. a color filter is further disposed between the microlens and the light-emitting layer in each of the first light-emitting element, the second light-emitting element, and the third light-emitting element; 7. A light-emitting device according to claim 4, wherein in an orthogonal projection onto the main surface, the distance between the center of the first electrode of the third light-emitting element and the center of the color filter corresponding to the third light-emitting element is greater than the distance between the center of the first electrode of the first light-emitting element and the center of the color filter corresponding to the first light-emitting element.

8. The light-emitting device described in claim 7, characterized in that in the third light-emitting element, the center of the color filter corresponding to the third light-emitting element is shifted from the center of the first electrode in a direction from the center of the display area toward the outer edge of the display area.

9. 9. The light-emitting device according to claim 7, wherein in each of the plurality of light-emitting elements, the distance between the center of the first electrode in orthogonal projection onto the main surface and the center of the corresponding color filter increases continuously or stepwise as it moves from the center of the display area toward the outer edge of the display area.

10. 10. The light-emitting device according to claim 7, wherein, in each of the first light-emitting element, the second light-emitting element and the third light-emitting element, the distance between the center of the first electrode and the center of the corresponding color filter in an orthogonal projection onto the main surface is less than or equal to the distance between the center of the first electrode and the center of the corresponding microlens in an orthogonal projection onto the main surface.

11. 11. The light-emitting device according to claim 1, wherein, in an orthogonal projection onto the main surface, the conductive plug contacts the first electrode at a portion of the first electrode that is close to the center of the display area in which the plurality of light-emitting elements are arranged.

12. the plurality of light-emitting elements include a fourth light-emitting element, a fifth light-emitting element, and a sixth light-emitting element, each having a different distance between the reflective layer and the first electrode; the optical distance adjustment layer includes a first layer, a second layer, and a third layer, In the fourth light-emitting element, the first layer is disposed between the reflective layer and the first electrode, and the second layer and the third layer are disposed between a peripheral portion of the first electrode and the insulating layer, In the fifth light-emitting element, the first layer and the second layer are disposed between the reflective layer and the first electrode, and the third layer is disposed between a peripheral portion of the first electrode and the insulating layer, 12. The light emitting device according to claim 1, wherein in the sixth light emitting element, the first layer, the second layer, and the third layer are disposed between the reflective layer and the first electrode.

13. a photosensitive member, an exposure light source for exposing the photosensitive member, a developing device for applying a developer to the exposed photosensitive member, and a transfer device for transferring an image developed by the developing device onto a recording medium, An image forming apparatus, comprising the light emitting device according to claim 1 as the exposure light source.

14. 14. The image forming apparatus according to claim 13, wherein the plurality of light emitting elements are arranged along the longitudinal direction of the substrate.

15. an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image; A photoelectric conversion device, wherein the display unit displays an image captured by the imaging element, and the photoelectric conversion device comprises the light-emitting device according to claim 1 .

16. A display unit is provided in the housing, and a communication unit is provided in the housing and communicates with an external device.

13. An electronic device, wherein the display unit comprises the light-emitting device according to claim 1.

17. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 13. An illumination device, wherein the light source comprises a light emitting device according to claim 1.

18. A moving body having a body and a lighting fixture provided on the body, A moving body, wherein the lighting fixture comprises the light emitting device according to any one of claims 1 to 12.

19. A method for manufacturing a light emitting device in which a plurality of light emitting elements, each including a light emitting layer, are arranged on a substrate, comprising: forming a reflective layer on the substrate, the reflective layer corresponding to each of the plurality of light-emitting elements and reflecting light generated in the light-emitting layer; forming an optical distance adjustment layer on the reflective layer, and first electrodes in or on the optical distance adjustment layer, each corresponding to one of the plurality of light-emitting elements and transmitting light generated in the light-emitting layer; forming an insulating layer so as to cover the optical distance adjustment layer and the first electrode; forming a contact hole extending from the insulating layer through the optical distance adjustment layer to reach the height of the upper surface of the reflective layer while exposing a portion of the first electrode, and forming a conductive plug in the contact hole; exposing a portion of the first electrode different from the part, and forming the light-emitting layer so as to be in contact with the portion; A manufacturing method comprising:

Images