Molecular beam epitaxial growth equipment

Abstract

To provide a molecular beam epitaxial growth device that can make uniform a width dimension of a columnar crystal body in a column core direction and prevent a light-emitting element from decreasing in light emission efficiency.SOLUTION: A molecular beam epitaxial growth device comprises: a stage on which a substrate is mounted; a first molecular beam source which irradiates a substrate surface with a first molecular beam; a second molecular beam source which irradiates the substrate surface with a second molecular beam; a shutter which is configured to be capable of blocking the first molecular beam or the second molecular beam; and a control part which controls the operation of the shutter and relative positions of the stage with the first molecular beam source and the second molecular beam source. The irradiation direction of the first molecular beam emitted from the first molecular beam source and the irradiation direction of the second molecular beam emitted from the second molecular beam source are perpendicular to the substrate surface. The control part blocks the second molecular beam while the substrate surface is irradiated with the first molecular beam, and blocks the first molecular beam while the substrate surface is irradiated with the second molecular beam.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a molecular beam epitaxial growth apparatus, a crystal growth method, and a method for manufacturing a light-emitting device. [Background technology]

[0002] Some light-emitting elements included in lighting devices such as projectors have multiple semiconductor crystal pillars. These crystal pillars are manufactured by growing semiconductor crystals in a columnar shape using, for example, a molecular beam epitaxy (MBE)-based molecular beam epitaxy (MBE) apparatus. Generally, when growing crystal pillars in the columnar core direction using an MBE apparatus, multiple types of molecular beams containing semiconductor materials are uniformly irradiated onto the surface of a substrate. To achieve this, multiple molecular beam sources are arranged around a target position on the substrate surface in a side view, such that the directions of travel of the multiple molecular beams form a large angle, for example, 40° to 45°, in the circumferential direction with respect to a reference direction perpendicular to the substrate surface. For example, Patent Document 1 discloses an MBE apparatus in which two molecular beam sources are arranged around a substrate surface in a side view, such that the directions of travel of the two molecular beams form a predetermined angle with respect to a reference direction perpendicular to the substrate surface, with the substrate surface being approximately at the center. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 5-326404 Summary of the Invention [Problem to be solved by the invention]

[0004] In conventional MBE apparatuses, it was difficult to irradiate the substrate surface with multiple types of molecular beams perpendicularly. In other words, in conventional MBE apparatuses, multiple types of molecular beams were irradiated onto the substrate surface along directions inclined relative to a reference direction perpendicular to the surface. Therefore, as the growth of the columnar crystals progressed, the width dimension perpendicular to the column core direction increased, or it was difficult to control the width dimension and make it uniform in the column core direction. As a result, the width dimension of the columnar crystals after the MBE process was completed was not uniform in the column core direction, or the width dimension of the tip end of the columnar crystal in the column core direction was larger than the width dimension of the base end, which could result in a decrease in the light-emitting efficiency of the light-emitting device. [Means for solving the problem]

[0005] In order to solve the above problems, one aspect of the present invention provides a BE apparatus including a stage for placing an object having a substrate thereon, a first molecular beam source for irradiating the object with a first molecular beam, a second molecular beam source for irradiating the object with a second molecular beam, a shutter configured to be able to block the first molecular beam or the second molecular beam, and a control unit for controlling the operation of the shutter and the relative position of the stage with respect to the first molecular beam source and the second molecular beam source. The control unit blocks the second molecular beam while the first molecular beam is irradiating the surface, and blocks the first molecular beam while the second molecular beam is irradiating the surface. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a plan view of a light-emitting device manufactured using the MBE apparatus of the first embodiment. [Figure 2] 2 is a cross-sectional view of the light-emitting element shown in FIG. 1 taken along line II. [Figure 3] 3 is an enlarged plan view of a region RR including a light-emitting portion of the light-emitting element shown in FIG. 2. FIG. [Figure 4] 3 is a cross-sectional view showing a step in the method for manufacturing the light-emitting element shown in FIG. 2. [Figure 5] 1 is a schematic cross-sectional view of an MBE apparatus according to a first embodiment. [Figure 6]6 is a plan view of the shutter body and various types of molecular beam sources of the MBE apparatus shown in FIG. 5. FIG. [Figure 7] 6 is a plan view of another shutter body of the MBE apparatus shown in FIG. 5. FIG. [Figure 8] 8 is a plan view of another shutter body at a timing different from that of FIG. 7. [Figure 9] 7A and 7B are plan views of the shutter body and various types of molecular beam sources at different timings from those in FIG. 6. [Figure 10] 3 is a cross-sectional view showing a step in the method for manufacturing the light-emitting element shown in FIG. 2. [Figure 11] 1 is a schematic diagram of a main part of an MBE apparatus according to a first embodiment. [Figure 12] FIG. 1 is a schematic diagram of a main part of a conventional MBE apparatus. [Figure 13] FIG. 10 is a schematic side view of an MBE apparatus according to a second embodiment. [Figure 14] 14 is a schematic side view of the MBE apparatus of the second embodiment at a timing different from that of FIG. 13. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0007] [First embodiment] A first embodiment of the present invention will be described below with reference to FIGS. In the drawings below, the dimensions of some components may be scaled differently to make them easier to see.

[0008] (Basic structure of light-emitting element) FIG. 1 is a plan view of a light-emitting element 5, which is an example of a light-emitting element that can be manufactured using the MBE apparatus of this embodiment. As shown in FIG. 1, the light-emitting element 5 of this embodiment is used, for example, in a projector (not shown), and directly forms an image by modulating the light in accordance with image information. In FIG. 1, when viewed from the traveling direction of light emitted from the light-emitting element 5, two directions that are included in the surface 50a of the light-emitting element 5 and are orthogonal to each other are defined as the X direction and the Y direction. The direction that is orthogonal to the X direction and the Y direction and is parallel to the traveling direction of light emitted from the light-emitting element 5, i.e., the optical axis, is defined as the Z direction.

[0009] 1, the light-emitting element 5 has a plurality of light-emitting sections 30 arranged in an array. The plurality of light-emitting sections 30 are arranged in a matrix along the X and Y directions. The light-emitting element 5 constitutes a self-luminous imager that forms an image with each light-emitting section 30 as one pixel.

[0010] Fig. 2 is a cross-sectional view of the light-emitting element 5 taken along line II in Fig. 1. As shown in Fig. 2, the light-emitting element 5 includes a substrate body 10, a reflective layer 11, a semiconductor layer 12, a light-emitting section 30, an insulating layer 40, a first electrode 50, a second electrode 60, and wiring 70.

[0011] The substrate body 10 is made of, for example, a silicon (Si) substrate, a gallium nitride (GaN) substrate, a sapphire substrate, or the like. A reflective layer 11 is provided on the surface 10a of the substrate body 10. The reflective layer 11 is made of, for example, a laminate in which AlGaN layers and GaN layers are alternately stacked, or a laminate in which AlInN layers and GaN layers are alternately stacked, or the like. The reflective layer 11 reflects light generated in a light-emitting layer 34 (described later) toward the opposite side of the substrate body 10 in the Z direction. A heat sink for dissipating heat generated in the light-emitting unit 30 may be provided on the lower surface 10b of the substrate body 10.

[0012] The semiconductor layer 12 is provided on the surface 11a of the reflective layer 11. The semiconductor layer 12 is a layer made of an n-type semiconductor material, for example, an n-type GaN layer, specifically a GaN layer doped with Si.

[0013] The light-emitting section 30 includes a plurality of nanocolumns (crystalline columns) 31 and a light propagation layer 32. The nanocolumns 31 are columnar crystalline structures that protrude and extend in the Z direction from the surface 12a of the semiconductor layer 12. That is, the crystal growth direction and column core direction of the nanocolumns 31 are perpendicular to the surface 10a of the substrate body 10 and the surface 12a of the semiconductor layer 12, and are parallel to the Z direction. The shape of the nanocolumns 31 in a planar view from the Z direction is, for example, a polygonal column, a cylindrical column, or an elliptical column. In this embodiment, the shape of the nanocolumns 31 is cylindrical. The width of the nanocolumns 31 in a direction perpendicular to the Z direction is on the order of nanometers, specifically, for example, 10 nm or more and 500 nm or less. The height of the nanocolumns 31 in the Z direction is, for example, 0.1 μm or more and 5 μm or less.

[0014] 3 is an enlarged plan view of a region RR shown in FIG. 2, which includes one light-emitting section 30 of the light-emitting element 5. As shown in FIG. 3, a plurality of nanocolumns 31 are arranged at a predetermined pitch along a predetermined direction on the XY plane including the X and Y directions. In this embodiment, the predetermined direction is the X and Y directions. The nanocolumns 31 exert a photonic crystal effect, confining light emitted by the light-emitting layer 34 in the in-plane direction of the substrate body 10 and causing it to exit in the stacking direction.

[0015] Each nanocolumn 31 has a first semiconductor layer 33, a light emitting layer 34, and a second semiconductor layer 35. Specifically, the nanocolumn 31 has a layered structure in which the first semiconductor layer 33, the light emitting layer 34, and the second semiconductor layer 35 are sequentially layered in the Z direction from the surface 12a of the semiconductor layer 12. Each layer constituting the nanocolumn 31 is formed by the MBE method, as described below.

[0016] The first semiconductor layer 33 is provided on the surface 12a of the semiconductor layer 12. The first semiconductor layer 33 is provided between the semiconductor layer 12 and the light emitting layer 34 in the Z direction. The first semiconductor layer 33 is made of an n-type semiconductor layer, and is configured, for example, of an n-type GaN layer doped with Si.

[0017] The light emitting layer 34 is provided on the first semiconductor layer 33. The light emitting layer 34 is provided between the first semiconductor layer 33 and the second semiconductor layer 35 in the Z direction. The light emitting layer 34 has a quantum well structure in which, for example, a large number of GaN layers and InGaN layers are alternately stacked. The light emitting layer 34 emits light when a current is injected through the first semiconductor layer 33 and the second semiconductor layer 35. The number of GaN layers and InGaN layers constituting the light emitting layer 34 is not particularly limited. The light emitting layer 34 emits blue light in the blue wavelength band of 430 nm to 470 nm, for example.

[0018] The second semiconductor layer 35 is provided on the light-emitting layer 34. The second semiconductor layer 35 has a conductivity type different from that of the first semiconductor layer 33. That is, the second semiconductor layer 35 is a layer made of a p-type semiconductor material, and is configured, for example, by a p-type GaN layer doped with Mg. The first semiconductor layer 33 and the second semiconductor layer 35 function as cladding layers that have the function of confining light within the light-emitting layer 34 in the Z direction.

[0019] The light propagation layer 32 is provided to surround each nanocolumn 31 in plan view seen from the Z direction. Therefore, the light propagation layer 32 is provided in the gaps between adjacent nanocolumns 31 in the XY plane. The refractive index of the light propagation layer 32 is lower than that of the light emitting layer 34. The light propagation layer 32 is composed of, for example, a GaN layer, a titanium oxide (TiO2) layer, or the like. The GaN layer that composes the light propagation layer 32 may be i-type, n-type, or p-type. The light propagation layer 32 propagates the light generated in the light emitting layer 34 in the planar direction.

[0020] In the light-emitting section 30, a p-i-n diode is formed by a stack of a p-type second semiconductor layer 35, a light-emitting layer 34 that is not doped with impurities, and an n-type first semiconductor layer 33. In the light-emitting section 30, when a voltage equivalent to the forward bias voltage of the p-i-n diode is applied between the first electrode 50 and the second electrode 60 to inject a current, recombination of electrons and holes occurs in the light-emitting layer 34. This recombination generates light emission.

[0021] Light generated in the light-emitting layer 34 is propagated through the light propagation layer 32 in a direction parallel to the surface 10a of the substrate body 10 by the first semiconductor layer 33 and the second semiconductor layer 35. At this time, the light forms a standing wave due to the photonic crystal effect of the nanocolumns 31 and is confined in a direction parallel to the surface 10a of the substrate body 10. The confined light receives gain in the light-emitting layer 34 and undergoes laser oscillation. In the light-emitting element 5, the refractive index and thickness of the first semiconductor layer 33, the second semiconductor layer 35, and the light-emitting layer 34 are designed so that the intensity of light propagating in a direction parallel to the surface 10a of the substrate body 10 is maximized in the light-emitting layer 34 in the Z direction. Of the laser light traveling in the stacking direction, the laser light traveling toward the substrate body 10 is reflected by the reflective layer 11 and travels toward the second electrode 60. This allows the light-emitting unit 30 to emit light from the surface 60a of the second electrode 60.

[0022] 2, a mask layer 37 is provided on the semiconductor layer 12. The mask layer 37 is provided between the light propagation layer 32 and the semiconductor layer 12 in the Z direction. The mask layer 37 functions as a mask for selectively growing a film that constitutes each nanocolumn 31 in a specific region on the semiconductor layer 12 in the manufacturing process of the light emitting section 30. The mask layer 37 is made of, for example, a silicon oxide layer, a silicon nitride layer, or the like.

[0023] The insulating layer 40 is provided between adjacent light emitting sections 30 on the surface 12a of the semiconductor layer 12. The insulating layer 40 is made of, for example, a silicon oxide layer. The insulating layer 40 has the function of flattening the irregularities on the semiconductor layer 12 formed by the light emitting sections 30 and protecting the light emitting sections 30.

[0024] The first electrode 50 is electrically connected to the first semiconductor layer 33 of each nanocolumn 31 via the semiconductor layer 12. The first electrode 50 is an electrode on one side for injecting current into the light-emitting layer 34. The first electrode 50 is made of a metal layer such as Ni, Ti, Cr, Pt, or Au, or a laminated metal film made by laminating these metal layers.

[0025] The second electrode 60 is provided on the surface 30a of the light-emitting section 30. The second electrode 60 is the other electrode for injecting current into the light-emitting layer 34. The second electrode 60 is provided in a region corresponding to the light-emitting section 30 in the XY plane. The second electrode 60 is provided so as to contact the nanocolumns 31 and part of the light propagation layer 32. The second electrode 60 is conductive and optically transparent. Therefore, the second electrode 60 is composed of a metal layer such as Ni, Ti, Cr, Pt, or Au, a laminated metal film in which these are laminated, or a transparent conductive layer such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

[0026] The wiring 70 is connected, for example, via a bonding wire, to a drive circuit (not shown) provided in a predetermined region on the surface 10a of the substrate body 10. Furthermore, the first electrode 50 is connected, for example, via a bonding wire, to a drive circuit (not shown) provided in a region on the substrate body 10. Based on this configuration, the light-emitting unit 30 can inject current into the light-emitting layer 34 of each nanocolumn 31 via the first electrode 50 and the auxiliary second electrode 60 by driving the drive circuit.

[0027] (Basic structure of light-emitting device manufacturing method, crystal growth method, and MBE device) Next, a method for manufacturing the above-mentioned light-emitting element 5 will be described. Fig. 4 is a cross-sectional view showing one step of the method for manufacturing the light-emitting element 5. First, a metal film is formed on the surface 10a of the substrate body 10 by, for example, sputtering or vapor deposition, to form the reflective layer 11. Next, the semiconductor layer 12 is formed on the surface 11a of the reflective layer 11 by epitaxial growth. Examples of epitaxial growth methods include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE.

[0028] 4, a mask layer 37 having a large number of openings 137 is formed on the surface 12a of the semiconductor layer 12. The mask layer 37 is formed by, for example, film formation using a CVD (Chemical Vapor Deposition) method, a sputtering method, or the like, or by patterning using photolithography and etching.

[0029] Next, nanocolumns 31 are formed in each of the numerous openings 137 formed in the mask layer 37. In the process of forming the nanocolumns 31, the layered structure consisting of the substrate body 10, reflective layer 11, semiconductor layer 12, and mask layer 37 is treated as the substrate 100. In the process of forming the multiple nanocolumns 31, the nanocolumns 31 are grown and extended along the direction perpendicular to the surface 100a of the substrate 100, i.e., the surface 12a of the exposed semiconductor layer 12, i.e., the Z direction. The "substrate surface of the substrate" referred to in the claims corresponds to the surface 100a of the substrate 100.

[0030] 5 is a cross-sectional view, seen from the Y direction, of an MBE apparatus (molecular beam epitaxial growth apparatus) 201 of the first embodiment used in the process of forming a plurality of nanocolumns 31. As shown in FIG. 5, the MBE apparatus 201 includes a stage 210, at least a first molecular beam source 251, a second molecular beam source 252, a shutter 280, and a control unit 300.

[0031] The stage 210 is provided for placing an object on which crystal growth is to be performed. In this embodiment, a substrate 100 is placed as the object. The object on which crystal growth is to be performed may be the substrate itself, or a substrate on which a structure such as a functional element is previously provided. In other words, the object only needs to have a substrate. The stage 210 of the first embodiment is configured to be rotatable (movable in a predetermined direction) within the XY plane. Specifically, the stage 210 of the first embodiment includes a stage main body 212 formed in a plate shape and a disk shape when viewed from the Z direction. The stage main body 212 is made of, for example, stainless steel (SUS). The stage main body 212 is supported by a shaft member 215 and is rotatable about a center O of a plate surface 212a of the stage main body 212 and an axial direction DC of the shaft member 215.

[0032] A mounting portion 220 on which the substrate 100 is placed is provided on a plate surface (one plate surface) 212a of the stage main body 212. The mounting portion 220 is composed of a recess 222 formed on the plate surface 212a of the stage main body 212. The shape of the recess 222 in the XY plane is the same as the shape of the substrate 100 in the XY plane to be placed in the recess 222. The opening dimension of the recess 222 in the XY plane is slightly larger than the dimension of the substrate 100 in the XY plane. The depth dimension of the recess 222 is smaller than the thickness of the stage main body 212.

[0033] A molecular beam through hole 224 is formed in a region of the plate surface 212b that overlaps with the recess 222 in a direction parallel to the plate surfaces 212a and 212b of the stage main body 212. The molecular beam through hole 224 is connected to the recess in the Z direction. The shape of the recess 222 in the XY plane is the same as the shape of the region of the substrate 100 in which the multiple openings 137 are formed in the XY plane. The opening dimensions of the molecular beam through hole 224 in the XY plane are smaller than the opening dimensions of the recess 222 in the XY plane. The center of the molecular beam through hole 224 as viewed from the Z direction substantially overlaps with the center of the recess 222 as viewed from the Z direction. In the first embodiment, the shape of the region of the substrate 100 in which the multiple openings 137 are formed in the XY plane, and the shapes of the recess 222 and the molecular beam through hole 224 in the XY plane are circular.

[0034] In the mounting portion 220, the outer peripheral edge of the surface 100a of the substrate 100 abuts against the bottom surface 222p of the recess 222, thereby mounting the substrate 100 in the recess 222. With the substrate 100 mounted in the recess 222, the semiconductor layer 12 exposed in the mask layer 37 and the opening 137 on the surface 100a of the substrate 100 is exposed in the molecular beam penetration hole 224. Note that detailed structure of the substrate 100 is omitted in FIG. 5. A heater 226 is provided so as to overlap with the recess 222 in the Z direction and on the opposite side of the recess 222 from the side on which the molecular beam penetration hole 224 is formed. When the stage body 212 rotates, the heater 226 moves in conjunction with the recess 222 while maintaining its overlap with the recess 222 of the mounting portion 220 in the Z direction.

[0035] A detector 290 capable of detecting the amount of irradiation of each type of molecular beam irradiated onto the surface 100 a of the substrate 100 is provided on the plate surface 212 b of the stage main body 212 near the molecular beam penetration hole 224 .

[0036] The first molecular beam source 251 and the second molecular beam source 252 irradiate the surface 100a of the substrate 100, exposed through the molecular beam through-hole 224, of the substrate 100 placed in the recess 222 of the placement unit 220, with a first molecular beam M1 and a second molecular beam M2, respectively. The first molecular beam M1 and the second molecular beam M2 contain gallium (Ga) and nitrogen (N) as materials of the first semiconductor layer 33 of the nanocolumns 31. That is, the first molecular beam source 251 irradiates the surface 100a of the substrate 100 with a Ga molecular beam as the first molecular beam M1. The second molecular beam source 252 irradiates the surface 100a of the substrate 100 with an N molecular beam, specifically an RF-N2 molecular beam, as the second molecular beam M2. Each of the first to sixth molecular beam sources 251 to 252 is arranged so as to be immovable and imrotatable.

[0037] In the MBE apparatus 201 of the first embodiment, the irradiation directions of the multiple types of molecular beams irradiated from the multiple molecular beam sources are preferably perpendicular to the surface 100a of the substrate 100. Although they do not necessarily have to be perpendicular, it is preferable that they are closer to perpendicular. The irradiation direction of the first molecular beam M1 irradiated from the first molecular beam source 251 is parallel to the Z direction. The irradiation direction of the second molecular beam M2 irradiated from the second molecular beam source 252 is parallel to the Z direction. The irradiation directions of the third molecular beam, fourth molecular beam, fifth molecular beam, and sixth molecular beam irradiated from each of the third molecular beam source to the sixth molecular beam source are also parallel to the Z direction. That is, in the MBE apparatus 201 of the first embodiment, the irradiation directions of the multiple types of molecular beams irradiated from the multiple molecular beam sources are all perpendicular to the surface 100a of the substrate 100 and parallel to the Z direction. Here, the irradiation direction of the multiple types of molecular beams being perpendicular to the surface 100a of the substrate 100 means that the width dimensions of the nanocolumns 31 in the direction perpendicular to the growth direction and column core direction are made approximately uniform in the Z direction. Therefore, the angle formed between the direction perpendicular to the surface 100a of the substrate 100, i.e., the Z direction, and the irradiation direction of the multiple types of molecular beams including the first molecular beam M1 and the second molecular beam M2 is at least 90°±5°, preferably 90°±2°, and most preferably 90°.

[0038] The shutter 280 is configured to be able to block the first molecular beam M1 or the second molecular beam M2. Specifically, the shutter 280 of the first embodiment includes a shutter body (first shutter body) 281 formed in a plate shape and a disk shape when viewed from the Z direction, and a shutter body (second shutter body) 282. The shutter bodies 281 and 282 are made of, for example, SUS. The shutter bodies 281 and 282 are supported by an axis member 285. The axis member 285 is disposed coaxially with the axis member 215. The centers of the shutter bodies 281 and 282 as viewed from the Z direction overlap with the center O of the stage body 212 as viewed from the Z direction. Hereinafter, the centers of the stage body 212 and the shutter bodies 281 and 282 as viewed from the Z direction will be collectively referred to as the center O.

[0039] These shutter bodies 282 are disposed between the stage body 212 and the shutter body 281 in the Z direction (thickness direction of the stage body), and more specifically, are disposed adjacent to the shutter body 281 at a position closer to the shutter body 281 than the stage body 212 in the Z direction. The shutter bodies 281 are non-rotatable. The shutter bodies 282 are rotatable independently of each other around the center O and the axial direction DC of the axial member 285.

[0040] FIG. 6 is a plan view of the shutter 280, showing an area in which the shutter body 281, the first molecular beam source 251, and the second molecular beam source 252 are arranged, as viewed from the Z direction. FIG. 7 is a plan view of the shutter body 282 of the shutter 280 in the MBE apparatus 201 of the first embodiment, as viewed from the Z direction. As shown in FIG. 6, the MBE apparatus 201 includes a third molecular beam source 253, a fourth molecular beam source 254, a fifth molecular beam source 255, and a sixth molecular beam source 256, in addition to the first molecular beam source 251 and the second molecular beam source 252. The third molecular beam source 253 irradiates the surface 100a of the substrate 100 with a Si molecular beam as the third molecular beam. The fourth molecular beam source 254 irradiates the surface 100a of the substrate 100 with a Ga molecular beam similar to the first molecular beam M1 as the fourth molecular beam. The fifth molecular beam source 255 irradiates the surface 100a of the substrate 100 with an Mg molecular beam as the fifth molecular beam. The sixth molecular beam source 256 irradiates the surface 100a of the substrate 100 with an RF-N2 molecular beam similar to the second molecular beam M2 as the sixth molecular beam. Si or Mg is a dopant used when forming the nanocolumns 31 by crystal growth. Si is a dopant for n-type GaN, and Mg is a dopant for p-type GaN.

[0041] The first molecular beam source 251 to the sixth molecular beam source 256 are provided so that their molecular beam irradiation ports 261 to 266 are concentrically arranged around the center O when viewed from the Z direction, and are arranged at approximately equal intervals from each other in the circumferential direction θ around the center O. Note that, of the first molecular beam source 251 to the sixth molecular beam source 256, only the first molecular beam source 251 and the second molecular beam source 252 are shown in Fig. 5.

[0042] 6, in the MBE apparatus 201, a third molecular beam source 253, a fifth molecular beam source 255, a second molecular beam source 252, a fourth molecular beam source 254, and a sixth molecular beam source 256 are sequentially arranged in the circumferential direction θ, i.e., clockwise, from a first molecular beam source 251. However, the order in which these molecular beam sources are arranged in the circumferential direction θ is not particularly limited, and for example, the first molecular beam source 251, the second molecular beam source 252, the third molecular beam source 253, the fourth molecular beam source 254, the fifth molecular beam source 255, and the sixth molecular beam source 256 may be sequentially arranged along the circumferential direction θ.

[0043] 5 and 6, the shutter body 281 is formed with molecular beam passage holes (first molecular beam passage hole, second molecular beam passage hole) 271-276 penetrating in the Z direction. The molecular beam passage hole (first molecular beam passage hole) 271 is formed at a position overlapping with the molecular beam irradiation port 261 of the first molecular beam source 251 in a direction parallel to the surface 100a of the substrate 100, i.e., a direction parallel to the XY plane. The molecular beam passage hole (second molecular beam passage hole) 272 is formed at a position overlapping with the molecular beam irradiation port 262 of the second molecular beam source 252 in a direction parallel to the surface 100a of the substrate 100. Similarly, as shown in FIG. 6, the molecular beam passage holes 273-276 are formed at positions overlapping with the molecular beam irradiation ports 263-266 of the third molecular beam source 253 to the sixth molecular beam source 256 in a direction parallel to the surface 100a of the substrate 100.

[0044] 5 and 7, a molecular beam passing hole 278 penetrating in the Z direction is formed in the shutter main body 282. The molecular beam passing hole 278 is arranged so as to overlap with one of the molecular beam irradiation ports 261 to 266 of each of the first molecular beam source 251 to the sixth molecular beam source 256 in the Z direction by rotating the shutter main body 282 about the center O.

[0045] The shapes of the molecular beam passing holes 271-276 in the XY plane are the same as the shapes of the molecular beam irradiation ports 261-266 in the XY plane, and are, for example, circular. The opening dimensions of the molecular beam passing holes 271-276 in the XY plane are larger than the dimensions of the molecular beam irradiation ports 261-266 in the XY plane. On the other hand, the shape of the molecular beam passing hole 278 in the XY plane is the same as the shapes of the molecular beam passing holes 271-276 in the XY plane. The opening dimensions of the molecular beam passing hole 278 in the XY plane are larger than either of the molecular beam passing holes 271-276 or the molecular beam penetrating hole 224.

[0046] The stage body 212 and the shutter body 282 can rotate independently of each other with the center O as the reference. In other words, since the stage body 212 and the shutter body 282 rotate independently of each other in the circumferential direction θ, each of the molecular beam passing holes 271 to 276 can overlap with the recess 222 and the molecular beam penetrating hole 224 of the mounting part 220 in the direction parallel to the surface 100a of the substrate 100.

[0047] The control unit 300 controls the operation of the shutter 280 and the relative position of the stage 210 with respect to the first molecular beam source 251 and the second molecular beam source 252. The control unit 300 is, for example, a personal computer (PC). The control unit 300 in the first embodiment controls the rotation in the circumferential direction θ around the center O of the shutter main body 282 as the operation of the shutter 280, and also controls the rotation in the circumferential direction θ around the center O of the stage main body 212 as the rotation of the shutter main body 282 as the relative position.

[0048] The control unit 300 shields the sixth molecular beam from the second molecular beam M2 and the third molecular beam while at least the first molecular beam M1 is irradiating the surface 100a of the substrate 100 by the shutter 280, and shields the sixth molecular beam from the first molecular beam M1 and the third molecular beam while the surface 100a is being irradiated with the second molecular beam M2. In other words, the control unit 300 shields the other types of molecular beams while one type of molecular beam is irradiating the surface 100a of the substrate 100. Control of the stage 210 and the shutter 280 by the control unit 300 will be described later.

[0049] The control unit 300 is connected to the shaft members 215 and 285, each of the molecular beam sources from the first molecular beam source 251 to the sixth molecular beam source 256, and the detector 290 via wires or wirelessly (not shown). The control unit 300 can rotate the stage main body 212 to a desired position in the circumferential direction θ via the shaft member 215, and can rotate the stage 282 to a desired position in the circumferential direction θ independently of the stage main body 212 via the shaft member 285. The control unit 300 can also detect in real time from the detector 290 the irradiation dose of each type of molecular beam onto the surface 100a of the substrate 100 placed on the mounting unit 220 at any timing. It is preferable that the control unit 300 uses the detector 290 to periodically check whether each type of molecular beam can be irradiated at a predetermined dose from each of the molecular beam sources of the first molecular beam M1, the second molecular beam M2, and the third to sixth molecular beams.

[0050] In the method for manufacturing the light-emitting element 5 using the above-described MBE apparatus 201, a first molecular beam M1 and a second molecular beam M2 are irradiated onto the surface 100a of the substrate 100, thereby simultaneously growing a plurality of nanocolumns 31 along the Z direction perpendicular to the surface 100a. As described above, the nanocolumns 31 are made of gallium (Ga) contained in the first molecular beam M1, nitrogen (N) contained in the second molecular beam M2, and silicon (Si) contained in the third molecular beam.

[0051] In the process of forming the plurality of nanocolumns 31, as shown in FIG. 5, first, the substrate 100 is placed on the placement portion 220 of the stage 210 so that the surface 100a of the substrate 100 is exposed to the molecular beam penetration hole 224. The control unit 300 confirms in advance that the first molecular beam M1, the second molecular beam M2, and the third molecular beam can be irradiated at predetermined doses from at least the first molecular beam source 251, the second molecular beam source 252, and the third molecular beam source, respectively. Next, as shown in FIGS. 5 to 7, the control unit 300 rotates the shutter main body 282 in the circumferential direction θ to align the molecular beam passage hole 278 with the molecular beam passage hole 271 in the XY plane. The control unit 300 also rotates the stage main body 212 in the circumferential direction θ to align the placement portion 220 with the molecular beam passage hole 271 in the XY plane. The control unit 300 emits a first molecular beam M1 parallel to the Z direction from the molecular beam irradiation port 261 of the first molecular beam source 251, and irradiates the opening 137 of the substrate 100 with Ga molecules.

[0052] FIG. 8 is a plan view of the shutter body 282 as viewed from the Z direction at a different timing than that shown in FIG. 7 . FIG. 9 is a plan view of the area in which the shutter body 281 and various types of molecular beam sources are arranged as viewed from the Z direction at a different timing than that shown in FIG. 6 . As described above, after a predetermined time has elapsed since the start of emission of the first molecular beam M1, the control unit 300 rotates the shutter body 282 in the circumferential direction θ, as shown in FIGS. 7 and 8 , to align the molecular beam passage hole 278 with the molecular beam passage hole 273 in the XY plane. The control unit 300 also rotates the stage body 212 in the circumferential direction θ to align the mounting unit 220 with the molecular beam passage hole 273 in the XY plane. The control unit 300 emits a third molecular beam parallel to the Z direction from the molecular beam irradiation port 263 of the third molecular beam source 253, irradiating the opening 137 of the substrate 100 with Si molecules.

[0053] As described above, after a predetermined time has elapsed since the start of emission of the third molecular beam, the control unit 300 rotates the shutter main body 282 in the circumferential direction θ, so that the molecular beam passage hole 278 overlaps the molecular beam passage hole 272 in the XY plane, as shown by the two-dot chain line in Figures 7 and 8. The control unit 300 also rotates the stage main body 212 in the circumferential direction θ, so that the mounting unit 220 overlaps the molecular beam passage hole 272 in the XY plane. The control unit 300 emits the second molecular beam M2 parallel to the Z direction from the molecular beam irradiation port 262 of the second molecular beam source 252, as shown by the two-dot chain line in Figure 5, and irradiates the opening 137 of the substrate 100 with N molecules.

[0054] 5 to 9 , in the MBE apparatus 201, only one type of molecular beam is irradiated onto the surface 100a of the substrate 100 at a certain time and timing. That is, in the above-described process, Ga molecules contained in the first molecular beam M1, Si molecules contained in the third molecular beam, and N molecules contained in the second molecular beam M2 are irradiated onto the opening 137 of the substrate 100 sequentially, rather than simultaneously. By appropriately setting the predetermined irradiation times of each of the first molecular beam M1 to the third molecular beam M2, Si molecules and N molecules are incorporated into the Ga molecules reaching the opening 137 of the substrate 100, and Si-doped GaN crystals grow along the Z direction. That is, by such migration-enhanced epitaxy (MEE), Si-doped GaN can be grown parallel to the Z direction without applying excessive energy to the surface 12a of the semiconductor layer 12 exposed in the opening 137 and the growth surface of the crystalline columnar body. The predetermined time for irradiating each of the first to third molecular beams M1 to M3 is preferably set based on the average lifetime of the atoms contained in each of the first to third molecular beams M1 to M3 until they are incorporated into a crystal.

[0055] Through the above-described steps, a first semiconductor layer 33 made of Si-doped GaN crystal and having a predetermined size in the Z direction is formed in the opening 137 of the substrate 100. Subsequently, as in the formation of the first semiconductor layer 33, the control unit 300 selects a molecular beam source to be used depending on the crystal material of the light-emitting layer 34, and forms the light-emitting layer 34 on the first semiconductor layer 33. Furthermore, as in the formation of the first semiconductor layer 33, the control unit 300 selects a molecular beam source to be used depending on the crystal material of the light-emitting layer 34, and forms the light-emitting layer 34 on the first semiconductor layer 33 based on the MEE.

[0056] Next, the control unit 300 selects the first molecular beam source 251, the fifth molecular beam source 255, and the second molecular beam source 252 as molecular beam sources depending on the crystalline material of the second semiconductor layer 35, and forms the second semiconductor layer 35 on the light-emitting layer 34. FIG. 10 is a cross-sectional view showing one step of the method for manufacturing the light-emitting element 5. By the above-described step, as shown in FIG. 10, a plurality of nanocolumns 31 having an axial direction parallel to the Z direction can be simultaneously formed on the surface 100a of the substrate 100.

[0057] After the above-mentioned process, although not shown, an insulating film is formed around the nanocolumns 31 in the XY plane to form the light propagation layer 32. If the light propagation layer 32 is formed by, for example, the ALD (Atomic Layer Deposition) method, the light propagation layer 32 can also be formed in the minute gaps between the nanocolumns 31 in the XY plane.

[0058] Thereafter, the substrate 100 on which the plurality of nanocolumns 31 are formed is removed from the mounting portion 220 of the MBE apparatus 201. By photolithography and etching using a resist pattern (not shown), the plurality of nanocolumns 31 formed over substantially the entire surface 100a of the substrate 100 are patterned so as not to overlap with the light emitting portion 30 in the Z direction.

[0059] Next, an insulating layer 40 is formed so as to fill the spaces between the nanocolumns 31 in each light-emitting section 30. At this time, the insulating layer 40 can be formed by a coating method such as spin coating. The thickness of the insulating layer 40, i.e., the size in the Z direction, is preferably the same as or thicker than the height of the nanocolumns 31.

[0060] Next, a second electrode 60 is formed, which is electrically connected to each of the nanocolumns 31. Specifically, the second electrode 60 is formed by depositing and patterning a metal film or a transparent conductive layer using, for example, sputtering or vacuum deposition. Subsequently, film deposition and patterning are performed using sputtering or vacuum deposition to form wiring 70. The light-emitting device 1 shown in FIGS. 1 and 2 is completed through the above steps. Further steps are then performed, such as forming the first electrode 50, mounting a drive circuit, and electrically connecting the drive circuit to the first electrode 50 and the second electrode 60 by wire bonding.

[0061] The MBE apparatus 201 of the first embodiment described above includes a stage 210, a first molecular beam source 251, a second molecular beam source 252, a shutter 280, and a control unit 300. The stage 210 places the substrate 100 on a placement unit 220. The first molecular beam source 251 irradiates the surface 100a of the substrate 100 with a first molecular beam M1. The second molecular beam source 252 irradiates the surface 100a of the substrate 100 with a second molecular beam M2. The shutter 280 is configured to be able to block the first molecular beam M1 or the second molecular beam M2. The control unit 300 controls the operation of the shutter and the relative position of the stage with respect to the first molecular beam source and the second molecular beam source. In the MBE apparatus 201, the irradiation direction of the first molecular beam M1 irradiated from the first molecular beam source 251 and the irradiation direction of the second molecular beam M2 irradiated from the second molecular beam source 252 are perpendicular to the surface 100a of the substrate 100 placed on the placement unit 220. The control unit 300 shields the second molecular beam M2 while the first molecular beam M1 is irradiating the surface 100a of the substrate 100, and shields the first molecular beam M1 while the second molecular beam M2 is irradiating the surface 100a.

[0062] FIG. 11 is a schematic diagram of the main components of an MBE apparatus 201 according to the first embodiment. FIG. 12 is a schematic diagram of the main components of a conventional MBE apparatus. In the MBE apparatus 201 according to the first embodiment, as shown in FIG. 11, the irradiation directions of at least the first molecular beam M1 and the second molecular beam M2 are perpendicular to the surface 110a of the substrate 100. Furthermore, the shutter 280 is synchronized with the rotation of the stage 210 and the accompanying movement of the substrate 100. According to the MBE apparatus 201 according to the first embodiment, at any given moment, only one type of molecular beam is irradiated onto the surface 100a of the substrate 100 from one molecular beam source, such as only the first molecular beam M1 from the first molecular beam source 251. However, by having the control unit 300 move or rotate the stage 210 and the shutter 280, multiple types of molecular beams can be irradiated onto the surface 100a of the substrate 100 in a time-division manner. This aligns the irradiation directions of the first molecular beam M1 and the second molecular beam M2 in the Z direction, i.e., in a direction closer to perpendicular to the surface 100a of the substrate 100, and makes it possible to make the growth direction and column core direction of, for example, the first semiconductor layer 33 of the nanocolumns 31 formed by the MEE method parallel to the Z direction. As a result, the width dimension B of the nanocolumns 31 in a direction perpendicular to the growth direction and column core direction can be made substantially uniform in the Z direction, and the width dimension B can be controlled with high precision by controlling the irradiation amount of each molecular beam in the control unit 300, etc. As a result, the MBE apparatus 201 of the first embodiment can suppress a decrease in the luminous efficiency of the light-emitting element 5 to be manufactured.

[0063] 12, in the configuration of a conventional MBE apparatus, deposition is performed obliquely at an angle of, for example, about 45° with respect to the direction perpendicular to the surface 100a of the substrate 100. As a result, the width dimension B of the nanocolumns 31, for example, of the first semiconductor layer 33, increases as the first semiconductor layer 33 grows, which may result in a decrease in the luminous efficiency of the light-emitting element 5.

[0064] In the MBE apparatus 201 of the first embodiment, the stage 210 is configured to be relatively movable and rotatable in the circumferential direction θ. By moving or rotating the stage 210, the control unit 300 opens the molecular beam irradiation port 261 and closes the molecular beam irradiation port (the other molecular beam irradiation port) 262 when the surface 100a of the substrate 100 faces the molecular beam irradiation port 261 (one of the molecular beam irradiation ports) 261 of the molecular beam irradiation port 261 of the first molecular beam source 251 and the molecular beam irradiation port 262 of the second molecular beam source 252. At this time, the control unit 300 operates the shutter 280 to block the second molecular beam M2 irradiated from the molecular beam irradiation port 262.

[0065] In the MBE apparatus 201 of the first embodiment, specifically, the stage 210 includes a plate-shaped stage body 212, and a mounting portion 220 on which the substrate 100 is placed is provided on one plate surface 212b of the stage body 212. The stage body 212 is rotatable about a center O. The shutter 280 includes plate-shaped shutter bodies 281 and 282. The shutter body 281 is disposed opposite the stage body 212. The second shutter body 282 is disposed between the stage body 212 and the shutter body 281 in the thickness direction of the stage body 212, i.e., the Z direction. A molecular beam passage hole (first molecular beam passage hole) is formed in the shutter body 281 at a position overlapping with the molecular beam irradiation port 261 of the first molecular beam source 251 in a direction parallel to the surface 100a of the substrate 100, and a molecular beam passage hole is formed at a position overlapping with the molecular beam irradiation port 262 of the second molecular beam source 252 in a direction parallel to the surface 100a. A molecular beam passing hole 278 is formed in the shutter main body 282. The shutter main body 282 is provided rotatable in the circumferential direction θ coaxially with the stage main body 212 so that the molecular beam passing hole 278 overlaps with the molecular beam passing hole 271 or the molecular beam passing hole 272 and the mounting part 220 in a direction parallel to the surface 100a.

[0066] In the MBE apparatus 201 of the first embodiment, the stage body 212 on which the substrate 100 is placed and the shutter body 282 are synchronized, so that the first molecular beam M1 or the second molecular beam M2 can be irradiated onto the surface 100a of the substrate 100. The MBE apparatus 201 of the first embodiment has a double-structure shutter 280.

[0067] According to the MBE apparatus 201 of the first embodiment, the molecular beam passage holes 271-276 of the molecular beam to be irradiated onto the surface 100a of the substrate 100 are aligned with the molecular beam passage hole 278, and the molecular beam is emitted from a molecular beam source in which the molecular beam passage hole 278 communicates with one of the molecular beam passage holes 271-276. With this configuration, while the molecular beam passage hole 278 is rotated from one molecular beam source to another, the molecular beam passage holes of all types of molecular beam sources can be easily closed. Furthermore, according to the MBE apparatus 201 of the first embodiment, the load on the stage 210 and the shutter 280 during their rotational movement can be reduced.

[0068] In the crystal growth method and light-emitting device manufacturing method of the first embodiment, a first molecular beam M1, a second molecular beam M2, a third molecular beam M3, a sixth molecular beam M4, and a sixth molecular beam M5 are irradiated onto the surface 100a of the substrate 100, thereby growing nanocolumns 31 made of at least the material contained in the first molecular beam M1 and the second molecular beam M2 along a direction perpendicular to the surface 100a. In this step, the first molecular beam M1 to the sixth molecular beam M5 are irradiated onto the surface 100a from different positions so that the irradiation directions of the first molecular beam M1 to the sixth molecular beam M5 are parallel to the direction perpendicular to the surface 100a, and the control unit 300 shields the second molecular beam M2 to the sixth molecular beam M5 while the first molecular beam M1 is irradiating the surface 100a, and shields the first molecular beam M1 and the third molecular beam M5 to the sixth molecular beam M5 while the second molecular beam M2 is irradiating the surface 100a. According to the crystal growth method and the light-emitting device manufacturing method of the first embodiment, the width dimension B of the nanocolumns 31 in the direction perpendicular to the growth direction and the column core direction can be made substantially uniform in the Z direction, and the width dimension B can be controlled with high precision by controlling the irradiation amount of each molecular beam in the control unit 300. As a result, a decrease in the luminous efficiency of the light-emitting device 5 can be suppressed.

[0069] [Second embodiment] Next, an MBE apparatus according to a second embodiment of the present invention will be described with reference to FIGS. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals as those in the previous embodiment, and the description thereof will be omitted.

[0070] 13 is a schematic side view of the MBE apparatus 202 of the second embodiment as viewed from the Y direction. FIG. 14 is a schematic side view of the MBE apparatus 202 as viewed from the Y direction at a different timing from that of FIG. 13. As shown in FIG. 13, in the MBE apparatus 202, the stage 210 is provided so as to be rotatable about the center O, with the direction perpendicular to the exposed surface 100a of the substrate 100 placed on the mounting portion 220 being the radial direction DR. The first molecular beam source 251 to the fifth molecular beam source 255 are disposed at different positions in the circumferential direction γ when the stage 210 rotates about the center O. Note that the detector 290 is omitted in FIGS. 13 and 14.

[0071] The stage 210 includes a rotating member 218 that is rotatable in a circumferential direction γ about a center O, and a support member 219 that extends from the circumferential surface of the rotating member 218 along the radial direction DR toward the side where the first molecular beam source 251 to the fifth molecular beam source 255 are arranged. A mounting portion 220 is provided at the tip of the support member 219. The support member 219 is rotatable in the circumferential direction γ about the center O. A surface 100a of the substrate 100 mounted on the mounting portion 220 is perpendicular to the radial direction DR.

[0072] In the MBE apparatus 202, the irradiation directions of all types of molecular beams, including the first molecular beam M1 and the second molecular beam M2, are parallel to the radial direction DR. The control unit 300 is omitted in Figures 13 and 14. Since the control unit 300 rotates the rotating member 218 in the circumferential direction γ, the surface 100a of the substrate 100 placed on the placement unit 220 is arranged so as to be able to face any one of the molecular beam irradiation ports 261 to 265 of the first molecular beam source 251 to the fifth molecular beam source 255.

[0073] The irradiation direction of the first molecular beam M1 to the fifth molecular beam M2 irradiated by the first molecular beam source 251 to the fifth molecular beam source 255 is perpendicular to the surface 100a of the substrate 100 placed on the mounting unit 220. Each of the first molecular beam source 251 to the fifth molecular beam source 255 is provided with a shutter 280 that can be opened and closed independently. The control unit 300 controls the rotation angle of the rotating member 218 relative to the center O and the opening and closing of the shutters 280 of the multiple types of molecular beam sources. The control unit 300 shields the fifth molecular beam M1 from the second molecular beam M2 and the third molecular beam while the surface 100a of the substrate 100 is being irradiated with the first molecular beam M1. As illustrated in FIG. 13 , the control unit 300 shields the fifth molecular beam M1 from the first molecular beam M1 and the third molecular beam while the surface 100a is being irradiated with the second molecular beam M2. As illustrated in FIG. 14, the control unit 300 blocks the first molecular beam M1, the second molecular beam M2, the fourth molecular beam, and the fifth molecular beam while the third molecular beam is irradiating the surface 100a.

[0074] The method for manufacturing the light-emitting device 5 of the second embodiment is the same as the method for manufacturing the light-emitting device 5 of the first embodiment, except that the MBE device 202 of the second embodiment is used instead of the MBE device 201 of the first embodiment.

[0075] The MBE apparatus 202 of the second embodiment, like the MBE apparatus 201 of the first embodiment, can irradiate the surface 100a of the substrate 100 with multiple types of molecular beams in a time-division manner. This aligns the irradiation directions of the first to fifth molecular beams M1 to M5 in a direction perpendicular to the surface 100a of the substrate 100, thereby aligning the growth direction and column core direction of, for example, the first semiconductor layer 33 of the nanocolumns 31 formed by the MEE method in a direction perpendicular to the surface 100a. As a result, the width dimension B of the nanocolumns 31 in a direction perpendicular to the growth direction and column core direction can be made substantially uniform in the Z direction, and the width dimension B can be controlled with high precision by controlling the irradiation dose of each molecular beam in the control unit 300. Therefore, the MBE apparatus 202 of the second embodiment can suppress a decrease in the luminous efficiency of the light-emitting element 5 to be manufactured.

[0076] Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the specific embodiments, and various modifications and variations are possible within the scope of the gist of the present invention as set forth in the claims. Furthermore, the components of multiple embodiments can be combined as appropriate.

[0077] For example, in the MBE apparatus according to the present invention, the number of molecular beams is not limited to two and can be changed as appropriate depending on the structure and materials of the crystal structure and light-emitting device to be manufactured. Furthermore, molecular beams of dopants such as Si and Mg, which have little effect on the expansion of the width dimension during the growth of crystal columns, may be irradiated onto the surface of the substrate in parallel with other molecular beams. In this case, the number and position of molecular beam through-holes in the shutter and the shutter opening / closing structure may be appropriately changed by, for example, making the shutter body 281 rotatable. Note that, when an InGaN quantum well layer or an AlGaN electron blocking layer is inserted into the light-emitting layer 34, for example, the molecular beam source may be In molecules as the fourth molecular beam M4 and Al molecules as the sixth molecular beam M6. Furthermore, the combination of materials for the first molecular beam M1 and the second molecular beam M2 is not limited to Ga molecules and N molecules, but may also be Ga molecules and As molecules. As another example, Zn molecules and Se molecules may also be used. Furthermore, the type and structure of the light-emitting element are not limited to those described in the above embodiments, but include those having a structure that can be formed by crystal growth in a direction perpendicular to the surface of the substrate, using MBE, preferably MEE.

[0078] The MBE apparatus according to the embodiment of the present invention may have the following configuration. An MBE apparatus according to one embodiment of the present invention includes a stage on which an object having a substrate is placed, a first molecular beam source for irradiating the object with a first molecular beam, a second molecular beam source for irradiating the object with a second molecular beam, a shutter configured to be able to block the first molecular beam or the second molecular beam, and a controller for controlling the operation of the shutter and the relative position of the stage with respect to the first molecular beam source and the second molecular beam source. The controller blocks the second molecular beam while the surface is being irradiated with the first molecular beam, and blocks the first molecular beam while the surface is being irradiated with the second molecular beam.

[0079] In an MBE apparatus according to one aspect of the present invention, the stage is configured to be movable in a predetermined direction, and when the stage is moved so that the surface faces one of the molecular beam irradiation ports of the first molecular beam source and the second molecular beam source, the control unit may open one of the molecular beam irradiation ports and close the other molecular beam irradiation port, thereby operating a shutter to block the first molecular beam or the second molecular beam irradiated from the molecular beam irradiation port.

[0080] In one embodiment of the MBE apparatus of the present invention, the stage includes a plate-shaped stage body. A mounting portion on which a substrate is placed is provided on one plate surface of the stage body, and the stage body is rotatable about the center of the one plate surface. The shutter is disposed opposite the stage body and includes a plate-shaped first shutter body and a plate-shaped second shutter body disposed between the stage body and the first shutter body in the thickness direction of the stage body. A first molecular beam passage hole is formed in the first shutter body at a position overlapping with a molecular beam irradiation port of the first molecular beam source in a direction parallel to the surface, and a second molecular beam passage hole is formed at a position overlapping with a molecular beam irradiation port of the second molecular beam source in a direction parallel to the surface. A molecular beam passage hole is formed in the second shutter body. The second shutter body may be rotatable in a circumferential direction coaxially with the stage body so that the molecular beam passage hole overlaps with the first molecular beam passage hole or the second molecular beam passage hole and the mounting portion in the direction parallel to the surface.

[0081] In an MBE apparatus according to one aspect of the present invention, the stage is rotatable with a direction perpendicular to the surface as a radial direction, and the first molecular beam source and the second molecular beam source may be disposed at different positions in the circumferential direction when the stage rotates, such that the irradiation direction of the first molecular beam and the irradiation direction of the second molecular beam are parallel to the radial direction.

[0082] In an MBE apparatus according to one embodiment of the present invention, the irradiation direction of the first molecular beam emitted from the first molecular beam source and the irradiation direction of the second molecular beam emitted from the second molecular beam source may be perpendicular to the substrate surface of the substrate.

[0083] A crystal growth method according to one aspect of the present invention may have the following configuration. A crystal growth method according to one embodiment of the present invention includes a step of growing a crystal columnar body made of a material contained in the first molecular beam and the second molecular beam along a direction perpendicular to a substrate surface of the substrate by irradiating a first molecular beam and a second molecular beam onto an object having a substrate, wherein in the step of growing the crystal columnar body, the first molecular beam and the second molecular beam are irradiated onto the surface from different positions so that the irradiation directions of the first molecular beam and the second molecular beam are parallel to the direction perpendicular to the substrate surface, and the second molecular beam is shielded while the first molecular beam is irradiating the surface, and the first molecular beam is shielded while the second molecular beam is irradiating the surface.

[0084] The method for manufacturing a light-emitting element according to one aspect of the present invention may have the following configuration. A method for producing a light-emitting device according to one aspect of the present invention uses the crystal growth method according to the above aspect of the present invention. [Explanation of symbols]

[0085] 201, 202...MBE apparatus (molecular beam epitaxial growth apparatus), 210...stage, 251...first molecular beam source, 252...second molecular beam source, 280...shutter, 300...controller.

Claims

[Claim 1] a stage on which an object having a substrate is placed; a first molecular beam source that irradiates the object with a first molecular beam; a second molecular beam source that irradiates the object with a second molecular beam; a shutter configured to be able to block the first molecular beam or the second molecular beam; The operation of the shutter and the stage relative to the first molecular beam source and the second molecular beam source a control unit that controls the relative position; Equipped with The control unit is configured to block the second molecular beam while the first molecular beam is irradiating the substrate. the first molecular beam is shielded while the second molecular beam is irradiating the substrate; the stage is configured to be movable in a predetermined direction; The control unit By moving the stage, the object and the molecular beam of the first molecular beam source are aligned. the irradiation port and one of the molecular beam irradiation ports of the second molecular beam source are opposed to each other; The object, the molecular beam irradiation port of the first molecular beam source, and the molecular beam irradiation port of the second molecular beam source When the one of the molecular beam irradiation ports faces the other of the molecular beam irradiation ports, the one of the molecular beam irradiation ports is opened, and The other molecular beam irradiation port is closed, and the first molecular beam or the Activating the shutter to block the molecular beam; the stage includes a plate-shaped stage body, a mounting portion on which the object is placed is provided on one plate surface of the stage body, the stage body is provided rotatably about the center of the one plate surface, The shutter is a plate-shaped first shutter body disposed opposite the stage body. and a gap between the stage body and the first shutter body in the thickness direction of the stage body. and a plate-shaped second shutter body disposed between the The first shutter body is provided with a molecular beam source for irradiating the first molecular beam source in a direction parallel to the substrate surface. A first molecular beam passage hole is formed at a position overlapping with the irradiation port, and the first molecular beam passage hole is formed at a position overlapping with the irradiation port. a second molecular beam passage hole is formed at a position overlapping with the molecular beam irradiation port of the second molecular beam source; a molecular beam passage hole is formed in the second shutter body; The second shutter body is configured so that the molecular beam passage hole is The stage is positioned so that one molecular beam passage hole or the second molecular beam passage hole overlaps with the placement portion. The drive shaft is provided coaxially with the drive body and rotatable in the circumferential direction. Molecular beam epitaxial growth equipment.

Images