Semiconductor Devices

Abstract

To provide a semiconductor device, etc. in which it is possible to suppress the occurrence of a situation in which the metal wire comes off from the substrate.SOLUTION: A semiconductor device 100 has a substrate 2, a semiconductor element 5 mounted on the substrate 2, a metal wire W1, and an adhesive member b2. The semiconductor element 5 is connected to the substrate 2 by the metal wire W1. The metal wire W1 has an end e1 connected to the substrate 2 and an end e2 connected to the semiconductor element 5. At least a part of the portion of the metal wire W1 different from the end e1 is in contact with the adhesive member b2. The end e1 of the metal wire W1 is away from the adhesive member b2.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device having a metal line connected to a substrate, and a method for manufacturing the semiconductor device. [Background technology]

[0002] Miniaturization is required for semiconductor devices for optical sensors, high-frequency semiconductor devices, etc. Such semiconductor devices have a hollow structure in which a semiconductor element is enclosed in a case. In such semiconductor devices, in order to miniaturize the semiconductor device, the spacing between multiple metal wires connected to the semiconductor element is often narrowed. Each metal wire is a wire.

[0003] Patent Document 1 discloses a configuration (hereinafter also referred to as "related configuration A") for realizing miniaturization of a functional element mounting module as a semiconductor device.

[0004] The semiconductor device may be attached to a specific device. The specific device may be, for example, industrial equipment. The industrial equipment may be, for example, semiconductor manufacturing equipment, conveying equipment, etc. In a semiconductor device attached to a specific device, when the specific device vibrates, multiple adjacent metal wires present inside the semiconductor device also vibrate. Therefore, when the specific device vibrates, a situation may occur in which multiple adjacent metal wires come into contact with each other. To prevent the occurrence of a situation in which multiple metal wires come into contact with each other, for example, in a semiconductor device for an optical sensor, multiple metal wires connected to a semiconductor element are fixed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-234949 Summary of the Invention [Problem to be solved by the invention]

[0006] In related configuration A, the ends of the metal wires connected to the substrate are in contact with the resin, so if the resin is deformed, for example, by heat, stress is applied to the ends of the metal wires, which can cause the metal wires to come off the substrate.

[0007] The present disclosure has been made to solve such problems, and aims to provide a semiconductor device or the like that can prevent a situation in which a metal wire becomes detached from a substrate. [Means for solving the problem]

[0008] In order to achieve the above object, a semiconductor device according to one aspect of the present disclosure includes a substrate, a semiconductor element mounted on the substrate, a metal wire, and an adhesive member, the semiconductor element being connected to the substrate by the metal wire, the metal wire having a first end connected to the substrate and a second end connected to the semiconductor element, the adhesive member being located above the substrate, and at least a part of the metal wire that is different from the first end being attached to the adhesive member. Fixed The first end of the metal wire is spaced from the adhesive member. The semiconductor device further includes a frame provided on the substrate and a plate-shaped lid that covers at least the metal wires in a plan view, the substrate and the frame house the semiconductor element and the metal wires, the lid is fixed to the frame via an adhesive member, the semiconductor element has a plate-like shape, the semiconductor element has a first main surface and a first back surface, the first back surface of the semiconductor element is the surface of the semiconductor element opposite to the first main surface, the first back surface of the semiconductor element is fixed to the substrate, an optical function section having both or either a function of emitting light and a function of detecting light is provided on the first main surface of the semiconductor element, the lid is translucent, and the adhesive member is translucent. . [Effects of the Invention]

[0009] According to the present disclosure, a semiconductor element is connected to a substrate by a metal wire. The metal wire has a first end connected to the substrate and a second end connected to the semiconductor element. At least a portion of the metal wire that is different from the first end is in contact with an adhesive member. The first end of the metal wire is separated from the adhesive member.

[0010] As a result, even if the adhesive member is deformed due to heat, stress is not applied to the first end of the metal wire, and therefore, it is possible to prevent the metal wire from coming off the substrate. [Brief explanation of the drawings]

[0011] [Figure 1]FIG. 1 is a diagram for explaining a configuration of a semiconductor device according to a first embodiment. [Figure 2] 3 is a flowchart of a manufacturing method according to the first embodiment. [Figure 3] 2 is a cross-sectional view illustrating a method for manufacturing the semiconductor device according to the first embodiment. FIG. [Figure 4] 2 is a cross-sectional view illustrating a method for manufacturing the semiconductor device according to the first embodiment. FIG. [Figure 5] FIG. 10 is a cross-sectional view of a semiconductor device according to a second embodiment. [Figure 6] FIG. 10 is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a second embodiment. [Figure 7] FIG. 10 is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a second embodiment. [Figure 8] 10 is a cross-sectional view illustrating the configuration of an adhesive member in modified configuration A. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments will be described with reference to the drawings. In the following drawings, the same components are assigned the same reference numerals. The names and functions of components assigned the same reference numerals are the same. Therefore, detailed descriptions of some of the components assigned the same reference numerals may be omitted.

[0013] The dimensions, materials, shapes, and relative positions of the components illustrated in the embodiments may be changed as appropriate depending on the configuration of the device, various conditions, etc. The dimensions of the components in the drawings may differ from the actual dimensions.

[0014] <First Embodiment> (Configuration of semiconductor device) 1A and 1B are diagrams illustrating a configuration of a semiconductor device 100 according to a first embodiment. The semiconductor device 100 is, for example, a semiconductor device that uses an optical sensor. FIG. 1A is a plan view of the semiconductor device 100 according to the first embodiment.

[0015] In FIG. 1(a), the X direction, Y direction, and Z direction are perpendicular to one another. The X direction, Y direction, and Z direction shown in the following figures are also perpendicular to one another. Hereinafter, the direction including the X direction and the direction opposite to the X direction (-X direction) will also be referred to as the "X-axis direction." Hereinafter, the direction including the Y direction and the direction opposite to the Y direction (-Y direction) will also be referred to as the "Y-axis direction." Hereinafter, the direction including the Z direction and the direction opposite to the Z direction (-Z direction) will also be referred to as the "Z-axis direction."

[0016] In the following, the plane including the X-axis direction and the Y-axis direction will also be referred to as the "XY plane." In the following, the plane including the X-axis direction and the Z-axis direction will also be referred to as the "XZ plane." In the following, the plane including the Y-axis direction and the Z-axis direction will also be referred to as the "YZ plane."

[0017] FIG. 1(b) is a cross-sectional view of the semiconductor device 100 according to the first embodiment.

[0018] As shown in FIGS. 1(a) and 1(b), the semiconductor device 100 includes a substrate 2, a semiconductor element 5, a plurality of metal wires W1, adhesive members b1 and b2, a frame 3, and a lid .

[0019] The semiconductor element 5 is, for example, a semiconductor chip. The semiconductor element 5 has a plate shape. In plan view, the semiconductor element 5 has a rectangular shape. The semiconductor element 5 has a main surface 5s and a back surface 5r. The back surface 5r is the surface of the semiconductor element 5 opposite to the main surface 5s.

[0020] An optical function unit 4 serving as an optical function element is provided on the main surface 5s of the semiconductor element 5. The optical function unit 4 is an optical sensor serving as a light-receiving element having a function of detecting light. The optical function unit 4 may also be a light-emitting element having a function of emitting light. The optical function unit 4 may also be an element having both a function of emitting light and a function of detecting light.

[0021] The substrate 2 has a main surface 2s and a back surface 2r. The back surface 5r of the semiconductor element 5 is adhered to the main surface 2s of the substrate 2 with an adhesive member b1. That is, the back surface 5r of the semiconductor element 5 is fixed to the substrate 2. That is, the semiconductor element 5 is mounted on the substrate 2.

[0022] The adhesive member b1 has thermosetting properties. The adhesive member b1 is an adhesive. The adhesive is, for example, a resin-based adhesive, a metal-containing adhesive, or the like. The resin-based adhesive is made of, for example, epoxy resin, acrylic resin, or the like. The metal-containing adhesive is made of, for example, solder, Ag paste, or the like.

[0023] The metal wire W1 is, for example, a conductive wire. The semiconductor element 5 is connected to the substrate 2 by the metal wire W1. That is, the semiconductor element 5 is electrically connected to the substrate 2 by the metal wire W1. Specifically, the main surface 5s of the semiconductor element 5 is connected to the main surface 2s of the substrate 2 by the metal wire W1.

[0024] FIG. 1(b) shows two metal wires W1 connecting the semiconductor element 5 and the substrate 2. In the semiconductor device 100 shown in FIG. 1(b), the multiple metal wires W1 are actually arranged so that they are adjacent to each other in the Y-axis direction. Hereinafter, one of the two metal wires W1 in FIG. 1(b) will also be referred to as the "metal wire W1 on one side." The metal wire W1 on one side is, for example, the right-side metal wire W1 of the two metal wires W1 in FIG. 1(b). The metal wire W1 on one side is, for example, the left-side metal wire W1 of the two metal wires W1 in FIG. 1(b).

[0025] In the semiconductor device 100, the plurality of metal wires W1 on one side are arranged so that the plurality of metal wires W1 on one side are adjacent to each other in the Y-axis direction.

[0026] In the semiconductor device 100 shown in FIG. 1(b), the plurality of metal wires W1 do not necessarily have to be arranged in the Y-axis direction.

[0027] The metal wire W1 has an end e1, an end e2, and a loop top T1. The end e1 is one end of the metal wire W1. The end e1 is a first end. The end e2 is the other end of the metal wire W1. The end e2 is a second end.

[0028] Hereinafter, the portion of the metal wire W1 between the end e1 and the end e2 will also be referred to as the "linear portion." The linear portion of the metal wire W1 is curved in the vertical plane. The shape of the linear portion in the vertical plane is approximately arched or arched. That is, the linear portion of the metal wire W1 has undulations.

[0029] The loop top T1 is the part of the linear portion of the metal wire W1 that is farthest from the substrate 2. Specifically, the loop top T1 is the part of the linear portion of the metal wire W1 that is farthest from the main surface 2s of the substrate 2. When the main surface 2s of the substrate 2 faces upward, the loop top T1 is the uppermost part of the linear portion of the metal wire W1.

[0030] An end e1 of the metal wire W1 is connected to the substrate 2. Specifically, the end e1 of the metal wire W1 is connected to the main surface 2s of the substrate 2. More specifically, the end e1 of the metal wire W1 is connected to a pad (not shown) provided on the main surface 2s of the substrate 2.

[0031] The end e2 of the metal wire W1 is connected to the semiconductor element 5. Specifically, the end e2 of the metal wire W1 is connected to the main surface 5s of the semiconductor element 5. More specifically, the end e2 of the metal wire W1 is connected to a pad (not shown) provided on the main surface 5s of the semiconductor element 5.

[0032] The frame 3 is a member for accommodating the semiconductor element 5, the metal wires W1, etc. The frame 3 is made of a sealing material such as resin or mold resin. The frame 3 has a closed loop shape in plan view. The frame 3 is provided on the main surface 2s of the substrate 2. In other words, the frame 3 is provided on the substrate 2. The frame 3 extends in a direction perpendicular to the main surface 2s of the substrate 2. The substrate 2 and the frame 3 accommodate the semiconductor element 5 and the metal wires W1 connected to the semiconductor element 5.

[0033] The lid 7 is a member for protecting, for example, the metal wire W1, the semiconductor element 5, etc. The lid 7 is plate-shaped. The lid 7 is made of resin. In a plan view, the lid 7 covers at least the metal wire W1. The lid 7 has a main surface 7s and a back surface 7r. The lid 7 is fixed to the frame 3 via an adhesive member b2. Specifically, the back surface 7r of the lid 7 is adhered to the upper surface of the frame 3 via the adhesive member b2.

[0034] The adhesive member b2 is a member for fixing the metal wire W1 and the frame 3. When the main surface 2s of the substrate 2 faces upward, the adhesive member b2 is located above the substrate 2.

[0035] The adhesive member b2 is an insulating adhesive. The adhesive is mainly composed of, for example, a resin. The resin is, for example, an epoxy resin, a silicone resin, or the like. The adhesive member b2 is also thermosetting.

[0036] The adhesive member b2, which is made of resin, may be deformed due to a change in temperature of the adhesive member b2. Hereinafter, the deformation of the adhesive member b2 caused by a change in temperature of the adhesive member b2 is also referred to as "member deformation." The member deformation of the adhesive member b2 is, for example, the expansion or contraction of the adhesive member b2.

[0037] The lid 7 is also provided with an opening H1. The opening H1 exposes the optical function unit 4 of the semiconductor element 5 to the outside of the lid 7. The opening H1 is provided so that the opening H1 overlaps with the main surface 5s of the semiconductor element 5 in a planar view. The area of ​​the opening H1 in a planar view is equal to or smaller than the area of ​​the main surface 5s of the semiconductor element 5 in a planar view.

[0038] Due to the presence of the opening H1, the optical function section 4 of the semiconductor element 5 receives light that passes through the opening H1 and is outside the lid 7, and detects the light.

[0039] Furthermore, the loop top T1 of the metal wire W1 is in contact with the adhesive member b2. Furthermore, the loop top T1 is not in contact with the lid 7. The end e1 of the metal wire W1 is separated from the adhesive member b2. In other words, the end e1 of the metal wire W1 is not in contact with the adhesive member b2. Furthermore, the end e2 of the metal wire W1 is not in contact with the adhesive member b2.

[0040] Hereinafter, the portion of the metal wire W1 that is different from the end e1 will also be referred to as the "non-substrate side." The non-substrate side has a loop top T1 and an end e2. The loop top T1 of the metal wire W1 is part of the non-substrate side. In other words, the loop top T1 of the metal wire W1 is at least a part of the non-substrate side.

[0041] As described above, the loop top T1 of the metal wire W1 is in contact with the adhesive member b2, that is, at least a portion of the non-substrate side of the metal wire W1 is in contact with the adhesive member b2.

[0042] Hereinafter, the portion of the metal wire W1 that is not in contact with the adhesive member b2 will also be referred to as the "non-contact portion." The metal wire W1 has a non-contact portion. The non-contact portion of the metal wire W1 is, for example, the portion of the metal wire W1 that is not in contact with the adhesive member b2, as shown in FIG. 1(b). The non-contact portion of the metal wire W1 includes the ends e1 and e2. Furthermore, the non-contact portion of the metal wire W1 does not include the loop top T1.

[0043] Although the end e2 of the metal wire W1 is not in contact with the adhesive member b2, the present invention is not limited to this. The end e2 of the metal wire W1 may be in contact with the adhesive member b2 when the end e1 of the metal wire W1 is not in contact with the adhesive member b2.

[0044] (Manufacturing method) Next, an example of a method for manufacturing the semiconductor device 100 will be described with reference to FIGS. 2, 3, and 4. Hereinafter, the method for manufacturing the semiconductor device 100 will also be referred to as a "manufacturing method Pr." FIG. 2 is a flowchart of the manufacturing method Pr according to the first embodiment. FIG. 2 shows only main steps included in the multiple steps of the manufacturing method Pr. FIGS. 3 and 4 are cross-sectional views for explaining the manufacturing method of the semiconductor device 100 according to the first embodiment.

[0045] In the manufacturing method Pr, a plurality of semiconductor devices 100 are manufactured in parallel. To make the explanation of the manufacturing method Pr easier to understand, the steps for manufacturing two semiconductor devices 100 will be explained below as an example. In addition, the explanation of the manufacturing method Pr will mainly focus on the manufacturing steps for one of the two semiconductor devices 100.

[0046] In manufacturing method Pr, a substrate 2 and a lid 7 are used. The size of the substrate 2 used in manufacturing method Pr is larger than the size of the substrate 2 included in the semiconductor device 100 of FIG. 1(b). Hereinafter, the size of the substrate 2 included in the semiconductor device 100 of FIG. 1(b) will also be referred to as the "normal size."

[0047] In the following, the size of the substrate 2 used in the manufacturing method Pr will also be referred to as "large size." In the manufacturing method Pr, a large size substrate 2 is used. The large size substrate 2 is, for example, formed by connecting multiple normal size substrates 2. Note that the large size substrate 2 may also be made up of a single substrate.

[0048] The size of the large-sized substrate 2 is, for example, a size for manufacturing two semiconductor devices 100.

[0049] Furthermore, the size of the lid 7 used in manufacturing method Pr is larger than the size of the lid 7 included in the semiconductor device 100 in FIG. 1(b). Hereinafter, the size of the lid 7 used in manufacturing method Pr will also be referred to as the "large size." A large-size lid 7 is used in manufacturing method Pr. The size of the large-size lid 7 is, for example, a size for manufacturing two semiconductor devices 100.

[0050] Hereinafter, in the description of the manufacturing method Pr, the large-sized substrate 2 will be simply referred to as the substrate 2. Furthermore, the large-sized lid 7 will be simply referred to as the lid 7.

[0051] In the manufacturing method Pr, first, a frame forming step is performed (step S110). The frame forming step is a step of forming a frame 3 on the main surface 2s of the substrate 2. In the frame forming step, the frame 3 made of a sealing member is formed on the main surface 2s of the substrate 2. The frame 3 is formed by providing the sealing member on the main surface 2s of the substrate 2 by, for example, a transfer molding method.

[0052] The method for forming the frame 3 is not limited to the transfer molding method, but may be, for example, the injection molding method.

[0053] Furthermore, the frame 3 does not have to be formed directly on the main surface 2s of the substrate 2. For example, the frame 3 may be prepared in advance and then adhered to the main surface 2s of the substrate 2.

[0054] Next, an element mounting step is performed (step S120). The element mounting step is a step of mounting a semiconductor element 5 on the substrate 2. In short, in the element mounting step, the semiconductor element 5 is mounted on the main surface 2s of the substrate 2.

[0055] Specifically, in the element mounting step, an adhesive member b1 is applied to the main surface 2s of the substrate 2. Then, the semiconductor element 5 is placed on the adhesive member b1.

[0056] Next, the adhesive member b1 is subjected to a heat treatment A. In the heat treatment A, the adhesive member b1 is heated, and then the adhesive member b1 is heated so as to harden the adhesive member b1. The adhesive member b1 is heated, for example, using a heating furnace. As a result, the semiconductor element 5 is fixed to the substrate 2, as shown in FIG. 3(a). That is, the semiconductor element 5 is die-bonded.

[0057] Hereinafter, the state of the semiconductor element 5 and the substrate 2 will also be referred to as a “state St1.” In the state St1, there exists a connection state Stc.

[0058] The connection state Stc is a state in which the end e1 of the metal wire W1 is connected to the substrate 2, and the end e2 of the metal wire W1 is connected to the semiconductor element 5. The semiconductor element 5 in the connection state Stc and the substrate 2 in the connection state Stc are, for example, the semiconductor element 5 and the substrate 2 shown in FIG. 1(b).

[0059] Next, a metal wire connecting step is performed (step S130). The metal wire connecting step is a step of connecting the semiconductor element 5 to the substrate 2 with a metal wire W1 so that the state St1 of the semiconductor element 5 and the substrate 2 becomes a connected state Stc.

[0060] Specifically, in the metal wire connecting step, as shown in Fig. 3(a), first, the end e2 of the metal wire W1 is connected to the semiconductor element 5, and the end e1 of the metal wire W1 is connected to the substrate 2. More specifically, the end e2 of the metal wire W1 is connected to the pad of the semiconductor element 5, and the end e1 of the metal wire W1 is connected to the pad of the substrate 2. As a result, as shown in Fig. 3(a), the shape of the linear portion of the metal wire W1 in the vertical plane becomes approximately arch-shaped.

[0061] Therefore, after the metal wire connecting step is performed, the linear portion of the metal wire W1 has undulations, and therefore, after the metal wire connecting step is performed, the metal wire W1 has a loop top T1.

[0062] Hereinafter, the component after the metal wire connection step of manufacturing method Pr is also referred to as "component N." Component N is the component shown in FIG. 3(a). Hereinafter, a device having the function of moving component N is also referred to as a "movement control device."

[0063] Next, an adhesive member arranging step is performed (step S140). The adhesive member arranging step is a step of providing an adhesive member b2 on the rear surface 7r of the lid 7, as shown in FIG.

[0064] The adhesive member b2 exists in a softened state and a hardened state. The adhesive member b2 in the softened state has fluidity. The adhesive member b2 in the softened state is soft. The adhesive member b2 in the hardened state does not have fluidity. The adhesive member b2 in the hardened state is hard.

[0065] In the adhesive member placement step, with the back surface 7r of the lid 7 facing upward, a softened adhesive member b2 having fluidity is applied to the back surface 7r. The adhesive member b2 is applied to the back surface 7r of the lid 7, for example, so as not to enter the opening H1 of the lid 7. For example, with the opening H1 of the lid 7 covered by a mask jig, the adhesive member b2 is applied to the back surface 7r of the lid 7. The application of the adhesive member b2 is performed by, for example, printing. Note that the application of the adhesive member b2 may also be performed using, for example, a dispenser.

[0066] The adhesive member arranging step does not have to be performed after the metal wire connecting step, but may be performed, for example, before the metal wire connecting step.

[0067] The metal wire W1 is in a "fixed state Stf." The fixed state Stf includes a state St1a, a state St1b, and a state St1c.

[0068] In the state St1a, at least a portion of the non-substrate side of the metal wire W1 is in contact with the adhesive member b2. In the state St1a, at least a portion of the non-substrate side of the metal wire W1 is, for example, a loop top T1. Specifically, in the state St1a, as shown in FIG. 1(b), the loop top T1 of the metal wire W1 is in contact with the adhesive member b2.

[0069] State St1b is a state in which the end e1 of the metal wire W1 is separated from the adhesive member b2, as shown in FIG. 1(b). That is, state St1b is a state in which the end e1 of the metal wire W1 is not in contact with the adhesive member b2. State St1c is a state in which the end e2 of the metal wire W1 is not in contact with the adhesive member b2, as shown in FIG. 1(b). Note that the fixed state Stf does not necessarily include state St1c.

[0070] The state of the lid 7 also includes a lid fixed state. In the lid fixed state, the back surface 7r of the lid 7 is fixed to the frame 3 via the adhesive member b2. An example of the lid 7 in the lid fixed state is the lid 7 shown in FIG. 1(b).

[0071] Next, the fixing step is performed (step S150). The fixing step is performed after the frame forming step. That is, the frame forming step is performed before the fixing step. The fixing step is also performed after the metal wire connecting step, the frame forming step, and the adhesive member arranging step.

[0072] The fixing step is performed after the metal wire connecting step. The fixing step is a step of bringing the metal wire W1 into contact with the adhesive member b2 so that the metal wire W1 is in a fixed state Stf.

[0073] Hereinafter, the state in which the rear surface 7r of the lid 7 faces upward and the main surface 2s of the substrate 2 faces downward will also be referred to as a “fixing preparation state.” In the fixing preparation state, the main surface 5s of the semiconductor element 5 faces downward.

[0074] The fixing process is performed in a fixing preparation state. The lid 7 and the substrate 2 in the fixing preparation state are the lid 7 and the substrate 2 shown in FIG. 4(a). FIG. 4(a) shows the aforementioned component N. The component N in FIG. 4(a) is obtained by changing the orientation of the component N in FIG. 3(a) so that the main surface 2s of the substrate 2 of the component N in FIG. 3(a) faces downward.

[0075] Here, before the fixing step is performed, a substrate inversion process is performed to generate a fixing preparation state. In the substrate inversion process, the orientation of the component N in FIG. 3(a) is changed so that the main surface 2s of the substrate 2 of the component N in FIG. 3(a) faces downward.

[0076] Next, in the fixing process, a moving process is performed in which the movement control device moves the aforementioned component N so that the state of the metal wire W1 becomes the fixed state Stf and the state of the lid 7 becomes the lid fixed state in the fixing preparation state.

[0077] That is, in the fixing process, in the fixing preparation state, the movement control device performs a moving process to bring the metal wire W1 and the frame 3 into contact with the adhesive member b2 provided on the back surface 7r of the lid 7 so that the state of the metal wire W1 becomes the fixed state Stf and the state of the lid 7 becomes the lid fixed state.

[0078] The movement process is a process in which the movement control device moves the frame 3 and the metal wire W1 of the component N. The movement process is performed so that the frame 3 and the metal wire W1 of the component N move slowly downward in the state shown in FIG. 4(a). The movement speed of the metal wire W1 in the movement process is, for example, 1 mm / s or less.

[0079] Specifically, the moving process is performed, for example, so that the tip of the frame 3 comes into contact with the adhesive member b2 and the frame 3 is gradually pushed into the adhesive member b2. Also, the moving process is performed, for example, so that the loop top T1 of the metal wire W1 comes into contact with the softened adhesive member b2 and the loop top T1 is immersed in the adhesive member b2.

[0080] The frame 3 and the metal wire W1 are moved as shown in FIG. 4(b). For example, the loop top T1 of the metal wire W1 is immersed in the adhesive material b2. The softened adhesive material b2 is soft. Therefore, even if the loop top T1 comes into contact with the adhesive material b2 during the moving process, the metal wire W1 does not deform.

[0081] Next, in the fixing step, the adhesive member b2 in FIG. 4(b) is subjected to a heat treatment B. In the heat treatment B, the adhesive member b2 is heated so that the adhesive member b2 is hardened by the heat applied to the adhesive member b2. The adhesive member b2 is heated, for example, using a heating furnace. As a result, the softened adhesive member b2 hardens, and the frame 3 and the metal wire W1 are fixed.

[0082] Next, a bonding step is performed (step S160). In the bonding step, as shown in Fig. 4(c), a dicing tape Tp1 is bonded to the main surface 7s of the lid 7. The dicing tape Tp1 is bonded so that the dicing tape Tp1 covers the opening H1.

[0083] Hereinafter, the component after the bonding step of manufacturing method Pr is also referred to as "component A." Component A is the component shown in FIG. 4(c). Component A in manufacturing method Pr of this embodiment includes, as an example, two semiconductor devices 100.

[0084] Next, a cutting process is performed (step S170). In the cutting process, the component A is cut by a dicing blade (not shown) so that two semiconductor devices 100 are obtained from the component A. The component A is cut by moving the dicing blade from the substrate 2 to the lid 7. Then, each semiconductor device 100 is removed from the dicing tape Tp1, thereby obtaining each semiconductor device 100.

[0085] (summary) As described above, according to this embodiment, the semiconductor element 5 is connected to the substrate 2 by the metal wire W1. The metal wire W1 has an end e1 connected to the substrate 2 and an end e2 connected to the semiconductor element 5. At least a part of the portion of the metal wire W1 different from the end e1 is in contact with the adhesive member b2. The end e1 of the metal wire W1 is separated from the adhesive member b2.

[0086] As a result, even if the adhesive member b2 is deformed due to heat, stress is not applied to the end portion e1 of the metal wire W1, and therefore, it is possible to prevent the metal wire W1 from coming off the substrate 2.

[0087] Furthermore, according to the present embodiment, the loop tops T1 of the metal wires W1 are fixed by the adhesive member b2. Therefore, for example, when the semiconductor device 100 is attached to a specific device, even if the specific device vibrates and some of the adjacent metal wires W1 vibrate, it is possible to prevent the adjacent metal wires W1 from coming into contact with each other.

[0088] Furthermore, since the metal wire W1 is fixed, the distance between adjacent metal wires can be made narrower in the product design of the semiconductor device, which results in the advantage of being able to miniaturize the semiconductor device.

[0089] Furthermore, according to this embodiment, the adhesive member b2 is made of resin. Therefore, as described above, the adhesive member b2 may be deformed due to temperature changes. As described above, the deformation of the adhesive member b2 may be, for example, expansion or contraction of the adhesive member b2.

[0090] In this embodiment, the adhesive member b2 is not in contact with the ends e1 and e2 of the metal wire W1. That is, as described above, the metal wire W1 has a non-contact portion that is not in contact with the adhesive member b2. The non-contact portion of the metal wire W1 includes the ends e1 and e2. The non-contact portion of the metal wire W1 does not include the loop top T1. Hereinafter, the portion of the non-contact portion of the metal wire W1 other than the ends e1 and e2 will also be referred to as the "non-end non-contact portion."

[0091] If deformation of the adhesive member b2 occurs, the non-contact portion of the metal wire W1 will deform, and stress on the ends e1 and e2 will be suppressed. That is, in a situation where deformation of the adhesive member b2 occurs, stress on the semiconductor element 5 can be suppressed.

[0092] Furthermore, because the metal wire W1 has the ends e1 and e2 as non-contact portions, it is possible to prevent strain from occurring in the metal wire W1 and the substrate 2 even when a temperature cycle test is performed on the semiconductor device 100. This makes it possible to prevent strain from occurring in the metal wire W1 present between the adhesive member b2 and the substrate 2, the metal wire W1 present between the adhesive member b2 and the semiconductor element 5, etc. Therefore, it is possible to obtain the effect of preventing breakage of the metal wire W1 when a temperature cycle test is performed on the semiconductor device 100.

[0093] The contact of the metal wire W1 with the adhesive member b2 is not limited to the contact of the loop top T1 of the metal wire W1 with the adhesive member b2. At least a part of the metal wire W1, which is different from the loop top T1 and the ends e1 and e2, may be in contact with the adhesive member b2. This configuration also achieves the above-described effects.

[0094] Furthermore, in the fixing step of the manufacturing method Pr of this embodiment, the frame 3 and the metal wire W1 can be fixed with the adhesive member b2. Therefore, the manufacturing method Pr has the advantage of being more productive than, for example, a manufacturing method in which the member that fixes the metal wire W1 is different from the member that fixes the frame 3.

[0095] Generally, in the process of fixing the metal wire W1, an adhesive material such as an adhesive is applied to the metal wire W1 with the main surface 5s of the semiconductor element 5 facing upward. In this case, there is a possibility that foreign matter floating in the atmosphere may adhere to the main surface 5s of the semiconductor element 5.

[0096] According to the manufacturing method Pr of the present embodiment, the fixing step for fixing the metal wire W1 is performed in a state where the main surface 5s of the semiconductor element 5 faces downward. Therefore, for example, it is possible to prevent a situation where foreign matter adheres to the main surface 5s of the semiconductor element 5. Therefore, it is possible to improve the yield of the semiconductor device 100.

[0097] According to this embodiment, the optical function unit 4 is a light-receiving element having a function of detecting light. As described above, the optical function unit 4 may be a light-emitting element having a function of emitting light. As described above, the optical function unit 4 may be an element having both a function of emitting light and a function of detecting light.

[0098] Furthermore, the semiconductor element 5 is not limited to a semiconductor element provided with the optical function section 4. The semiconductor element 5 may be a semiconductor element for high frequencies. In this configuration as well, the above-mentioned effects can be obtained.

[0099] In the related configuration A, the ends of the metal wires that are joined to the substrate are covered with resin. By fixing the metal wires with resin, it is possible to prevent adjacent metal wires from coming into contact with each other.

[0100] In the process of applying a fluid resin, the amount of filler in the resin is often reduced to lower the viscosity of the resin in order to ensure a stable application amount. However, reducing the amount of filler in the resin increases the linear expansion coefficient of the resin. When a device using a resin with a high linear expansion coefficient is subjected to a temperature cycle test or the like, distortion may occur between the metal wire and the substrate. When distortion occurs, stress is applied to the metal wire and the substrate, which may cause the metal wire to come off the substrate.

[0101] On the other hand, if the amount of filler in the resin is increased, the following problems may occur. For example, the viscosity of the resin is too high to apply the resin. Furthermore, for example, many voids may be present in the resin, preventing the resin from completely covering the metal wires. If the above problems occur, there is a problem that the yield of semiconductor devices may decrease.

[0102] Therefore, the semiconductor device 100 of this embodiment has a configuration for achieving the above-mentioned effects, and therefore, the semiconductor device 100 of this embodiment can solve the above-mentioned problems.

[0103] <Embodiment 2> (Configuration of semiconductor device) 5 is a cross-sectional view of a semiconductor device 100A according to the second embodiment. The semiconductor device 100A differs from the semiconductor device 100 of FIG. 1 mainly in that it includes a substrate 2A instead of the substrate 2, a lid 7A instead of the lid 7, and an adhesive member b2a instead of the adhesive member b2. The other configurations of the semiconductor device 100A are the same as those of the semiconductor device 100. The following description of the semiconductor device 100A will focus mainly on the differences from the semiconductor device 100.

[0104] 1(b), the substrate 2A is mainly different in that it has a through-hole H2, which is a penetrating hole. The rest of the configuration of the substrate 2A is the same as that of the substrate 2.

[0105] The substrate 2A has a main surface 2s and a back surface 2r. The back surface 5r of the semiconductor element 5 is adhered to the main surface 2s of the substrate 2A with an adhesive member b1. That is, the back surface 5r of the semiconductor element 5 is fixed to the substrate 2A. That is, the semiconductor element 5 is mounted on the substrate 2A.

[0106] The substrate 2A is also provided with through-holes H2, which are through-holes. The through-holes H2 extend from the main surface 2s of the substrate 2A to the back surface 2r of the substrate 2A. In Fig. 5, as an example, two through-holes H2 are shown provided in the substrate 2A. Note that the number of through-holes H2 provided in the substrate 2A is not limited to two, and may be one or three or more.

[0107] The adhesive member b2a is a sheet-like adhesive sheet. The adhesive sheet is a solid sheet. The adhesive member b2a has a main surface b2s and a back surface b2r. The adhesive member b2a is configured so that, when the adhesive member b2a is attached to, for example, the lid 7A, the main surface b2s and the back surface b2r of the adhesive member b2a become flat.

[0108] The adhesive member b2a is also translucent. The adhesive member b2a has an infrared transmittance of 90% or more. The adhesive member b2a is made of a thermosetting resin. The resin is an epoxy resin, an acrylic resin, or the like. That is, the adhesive member b2a is thermosetting.

[0109] The semiconductor element 5 is connected to the substrate 2A by a metal wire W1. Specifically, the main surface 5s of the semiconductor element 5 is connected to the main surface 2s of the substrate 2A by the metal wire W1.

[0110] The number and configuration of the metal wires W1 provided in the semiconductor device 100A are similar to the number and configuration of the metal wires W1 provided in the semiconductor device 100 of embodiment 1. For example, in the semiconductor device 100A, the multiple metal wires W1 are arranged so that the multiple metal wires W1 are adjacent to each other in the Y-axis direction.

[0111] In the semiconductor device 100A, the loop top T1 of the metal wire W1 is the part of the linear portion of the metal wire W1 that is farthest from the substrate 2A. Specifically, the loop top T1 is the part of the linear portion of the metal wire W1 that is farthest from the main surface 2s of the substrate 2A. When the main surface 2s of the substrate 2A faces upward, the loop top T1 is the uppermost part of the linear portion of the metal wire W1.

[0112] An end e1 of the metal wire W1 is connected to the substrate 2A. Specifically, the end e1 of the metal wire W1 is connected to the main surface 2s of the substrate 2A. An end e2 of the metal wire W1 is connected to the semiconductor element 5. Specifically, the end e2 of the metal wire W1 is connected to the main surface 5s of the semiconductor element 5.

[0113] The frame 3 is provided on the main surface 2s of the substrate 2A. That is, the frame 3 is provided on the substrate 2A.

[0114] The lid 7A differs from the lid 7 in FIG. 1(b) mainly in that it does not have an opening H1. The lid 7A is also light-transmitting. The lid 7A is also transparent. The lid 7A is made of a light-transmitting material. Examples of the light-transmitting material include glass and transparent resin. The infrared transmittance of the lid 7A is 90% or more.

[0115] The rest of the configuration of the lid 7A is the same as that of the lid 7. The lid 7A has a plate-like shape. In a plan view, the lid 7A covers at least the metal wire W1.

[0116] The lid 7A is fixed to the frame 3 via an adhesive member b2a. Specifically, the back surface 7r of the lid 7A is adhered to the upper surface of the frame 3 via the adhesive member b2a.

[0117] The adhesive member b2a is a member for fixing the metal wire W1 and the frame 3. When the main surface 2s of the substrate 2A faces upward, the adhesive member b2a is located above the substrate 2A.

[0118] As described above, the adhesive member b2a is made of a thermosetting resin. The adhesive member b2a made of a resin may be deformed due to a temperature change of the adhesive member b2a. Hereinafter, the deformation of the adhesive member b2a caused by a temperature change of the adhesive member b2a is also referred to as "member deformation." The member deformation of the adhesive member b2a is, for example, the expansion or contraction of the adhesive member b2a.

[0119] Furthermore, the loop top T1 of the metal wire W1 is in contact with the adhesive member b2a, that is, at least a part of the non-substrate side of the metal wire W1 is in contact with the adhesive member b2a.

[0120] Furthermore, the loop top T1 is not in contact with the lid 7A. Furthermore, the end e1 of the metal wire W1 is separated from the adhesive member b2a. In other words, the end e1 of the metal wire W1 is not in contact with the adhesive member b2a. Furthermore, the end e2 of the metal wire W1 is not in contact with the adhesive member b2a.

[0121] Hereinafter, the portion of the metal wire W1 that is not in contact with the adhesive member b2a will also be referred to as the "non-contact portion." The metal wire W1 has a non-contact portion. The non-contact portion of the metal wire W1 is, for example, the portion of the metal wire W1 that is not in contact with the adhesive member b2a shown in FIG. 5. The non-contact portion of the metal wire W1 includes the ends e1 and e2. Furthermore, the non-contact portion of the metal wire W1 does not include the loop top T1.

[0122] Although the end e2 of the metal wire W1 is not in contact with the adhesive member b2a in the above embodiment, the present invention is not limited to this. The end e2 of the metal wire W1 may be in contact with the adhesive member b2a when the end e1 of the metal wire W1 is not in contact with the adhesive member b2a.

[0123] (Manufacturing method) Next, an example of a method for manufacturing the semiconductor device 100A will be described with reference to Figures 2, 6, and 7. Hereinafter, the method for manufacturing the semiconductor device 100A will also be referred to as "manufacturing method Pra." Except for some processing, the manufacturing method Pra is similar to the manufacturing method Pr of the semiconductor device 100. Figures 6 and 7 are cross-sectional views for explaining the manufacturing method of the semiconductor device 100A according to the second embodiment.

[0124] Here, the method for manufacturing the semiconductor device 100A Pra will be described, focusing on the differences from the method for manufacturing the semiconductor device 100 Pra in the first embodiment.

[0125] In the manufacturing method Pra, multiple semiconductor devices 100A are manufactured in parallel. To make the explanation of the manufacturing method Pra easier to understand, the following describes the steps for manufacturing two semiconductor devices 100A as an example. In addition, the explanation of the manufacturing method Pra will mainly focus on the manufacturing steps for one of the two semiconductor devices 100A.

[0126] In the manufacturing method Pra, a substrate 2A, a lid 7A, and an adhesive member b2a are used. The size of the substrate 2A used in the manufacturing method Pra is larger than the size of the substrate 2A included in the semiconductor device 100A of FIG. 5. Hereinafter, the size of the substrate 2A used in the manufacturing method Pra will also be referred to as the "large size." In the manufacturing method Pra, a large-sized substrate 2A is used. The size of the large-sized substrate 2A is, for example, a size for manufacturing two semiconductor devices 100A.

[0127] Furthermore, the size of the lid 7A used in the manufacturing method Pra is larger than the size of the lid 7A included in the semiconductor device 100A of FIG. 5. Hereinafter, the size of the lid 7A used in the manufacturing method Pra will also be referred to as the "large size." In the manufacturing method Pra, a large-size lid 7A is used. The size of the large-size lid 7A is, for example, a size for manufacturing two semiconductor devices 100.

[0128] Furthermore, the size of the adhesive member b2a used in the manufacturing method Pra is larger than the size of the adhesive member b2a included in the semiconductor device 100A of FIG. 5. Hereinafter, the size of the adhesive member b2a used in the manufacturing method Pra will also be referred to as "large size." Large-sized adhesive members b2a are used in the manufacturing method Pra. The size of the large-sized adhesive members b2a is, for example, a size for manufacturing two semiconductor devices 100A. Furthermore, the size of the large-sized adhesive members b2a used in the manufacturing method Pra is larger than the size of the large-sized substrate 2A used in the manufacturing method Pra.

[0129] Hereinafter, in the description of the manufacturing method Pra, the large-sized substrate 2 will be simply referred to as the substrate 2. The large-sized lid 7A will be simply referred to as the lid 7A. The large-sized adhesive member b2a will be simply referred to as the adhesive member b2a.

[0130] In manufacturing method Pra, a frame forming step is first performed (step S110), similar to embodiment 1. The frame forming step of manufacturing method Pra is a step of forming a frame 3 on the main surface 2s of substrate 2A. In the frame forming step of manufacturing method Pra, similar to embodiment 1, the frame 3 made of a sealing member is formed on the main surface 2s of substrate 2A.

[0131] Next, an element mounting step is performed (step S120) in the same manner as in the first embodiment. The element mounting step of the manufacturing method Pra is a step of mounting a semiconductor element 5 on the substrate 2A. In summary, in the element mounting step, the semiconductor element 5 is mounted on the main surface 2s of the substrate 2A.

[0132] First, in the element mounting step, an adhesive member b1 is applied to the main surface 2s of the substrate 2A. Then, the semiconductor element 5 is placed on the adhesive member b1. Next, the adhesive member b1 is subjected to a heat treatment A, as in the first embodiment. As a result, the semiconductor element 5 is fixed to the substrate 2A, as shown in FIG. 6(a).

[0133] Hereinafter, the state of the semiconductor element 5 and the substrate 2A in this embodiment will also be referred to as “state St1.” State St1 in this embodiment includes a connection state Stc.

[0134] The connection state Stc of this embodiment is a state in which the end e1 of the metal wire W1 is connected to the substrate 2A, and the end e2 of the metal wire W1 is connected to the semiconductor element 5. The semiconductor element 5 in the connection state Stc of this embodiment and the substrate 2A in the connection state Stc of this embodiment are, for example, the semiconductor element 5 and the substrate 2A shown in FIG.

[0135] Next, a metal wire connecting step is performed (step S130) as in the first embodiment. The metal wire connecting step of the manufacturing method Pra is a step of connecting the semiconductor element 5 to the substrate 2A with the metal wire W1 so that the state St1 of the semiconductor element 5 and the substrate 2A becomes the connected state Stc.

[0136] Specifically, in the metal wire connecting step of manufacturing method Pra, as in embodiment 1, first, end e2 of metal wire W1 is connected to semiconductor element 5, and end e1 of metal wire W1 is connected to substrate 2A, as shown in Fig. 6(a). As a result, the shape of the linear portion of metal wire W1 in the vertical plane becomes approximately arch-shaped, as shown in Fig. 6(a).

[0137] Therefore, after the metal wire connecting step is performed, the linear portion of the metal wire W1 has undulations, and therefore, after the metal wire connecting step is performed, the metal wire W1 has a loop top T1.

[0138] Hereinafter, the component after the metal wire connection step of the manufacturing method Pra is performed will also be referred to as "component Na." The component Na is the component shown in FIG. 6(a). Hereinafter, the device having the function of moving the component Na will also be referred to as "movement control device."

[0139] Next, an adhesive member arranging step is performed (step S140). As will be described in detail later, the adhesive member arranging step is a step of providing an adhesive member b2a on the back surface 7r of the lid 7A, as shown in Fig. 6(b). As described above, the adhesive member b2a is a sheet-like adhesive sheet.

[0140] The adhesive member b2a can be in a solid state, a softened state, or a hardened state. The solid state is the state before the adhesive member b2a is attached to the lid 7A. The solid state is the state before a hardening reaction occurs in the adhesive member b2a. The adhesive member b2a in the softened state is soft. The adhesive member b2a in the softened state has adhesiveness. When a hardening reaction occurs in the adhesive member b2a in the softened state, the adhesive member b2a is thermally hardened. As a result, the adhesive member b2a becomes hardened. The adhesive member b2a in the hardened state is hard.

[0141] The adhesive member b2a has a state change characteristic. The state change characteristic is a characteristic in which the adhesive member b2a changes from a solid state to a softened state when heated at a temperature lower than the temperature at which the adhesive member b2a thermally hardens. The state change characteristic is also a characteristic in which the adhesive member b2a changes from a softened state to a solid state when cooled.

[0142] The state change characteristic is that the solid adhesive member b2a softens again when heated to a temperature equal to or higher than the thermosetting temperature of the solid adhesive member b2a. That is, the adhesive member b2a has the property of melting again. Hereinafter, the melting again of the adhesive member b2a is also referred to as "remelting." After remelting, the adhesive member b2a changes from a softened state to a hardened state due to a thermal curing reaction.

[0143] The adhesive member b2a can be in a film-attached state or a film-unattached state. As shown in Figure 6(b), a protective film FL1 is attached to the back surface b2r of the adhesive member b2a in the film-attached state. The protective film FL1 is not attached to the back surface b2r of the adhesive member b2a in the film-unattached state.

[0144] In the adhesive member arranging step of the manufacturing method Pra, with the back surface 7r of the cover 7A facing upward, an adhesive member b2a in a film-attached state is provided on the back surface 7r (see FIG. 6(b)).

[0145] Next, in the adhesive member arranging step of the manufacturing method Pra, the adhesive member b2a in the film-attached state is subjected to a heat treatment Ab. Heating in the heat treatment Ab is performed so that the temperature of the adhesive member b2a becomes 50° C. or higher, for example.

[0146] The heat treatment Ab causes the adhesive member b2a to be softened. Therefore, the adhesive member b2a in the softened state has adhesiveness. When the adhesive member b2a is softened, the heat treatment Ab is completed.

[0147] Next, in the adhesive member arrangement step of the manufacturing method Pra, a pressure treatment is performed. In the pressure treatment, pressure is applied to the protective film FL1 so that the adhesive member b2a in the film-attached state and the softened state is attached to the back surface 7r of the lid 7A. That is, pressure is applied to the softened adhesive member b2a via the protective film FL1. By the pressure treatment, the adhesive member b2a in the film-attached state and the softened state is attached to the back surface 7r of the lid 7A.

[0148] Next, in the adhesive member placement step, a cooling process Ca is performed. In the cooling process Ca, the adhesive member b2a is cooled so that the state of the adhesive member b2a changes from a softened state to a solid state. Next, the protective film FL1 is peeled off from the back surface b2r of the adhesive member b2a in a solid state.

[0149] The adhesive member arranging step does not have to be performed after the metal wire connecting step, but may be performed, for example, before the metal wire connecting step.

[0150] As described above, the state of the metal wire W1 includes a “fixed state Stf.” The fixed state Stf in this embodiment includes a state St1a, a state St1b, and a state St1c.

[0151] In the state St1a of this embodiment, at least a portion of the non-substrate side portion of the metal wire W1 is in contact with the adhesive member b2a. In the state St1a, at least a portion of the non-substrate side portion of the metal wire W1 is, for example, a loop top T1. Specifically, in the state St1a of this embodiment, for example, as shown in FIG. 5, the loop top T1 of the metal wire W1 is in contact with the adhesive member b2a.

[0152] In the present embodiment, state St1b is a state in which the end e1 of the metal wire W1 is separated from the adhesive member b2a, as shown in Fig. 5. That is, state St1b is a state in which the end e1 of the metal wire W1 is not in contact with the adhesive member b2a. In addition, state St1c is a state in which the end e2 of the metal wire W1 is not in contact with the adhesive member b2a, as shown in Fig. 5. Note that the fixed state Stf in the present embodiment does not necessarily include state St1c.

[0153] The state of the lid 7A also includes a lid fixed state. In this embodiment, the lid fixed state is a state in which the back surface 7r of the lid 7A is fixed to the frame 3 via the adhesive member b2a. The lid 7A in the lid fixed state is, for example, the lid 7A shown in FIG.

[0154] Next, the fixing step is performed (step S150). The fixing step of manufacturing method Pra is performed after the frame forming step. That is, the frame forming step of manufacturing method Pra is performed before the fixing step. Furthermore, the fixing step of manufacturing method Pra is performed after the metal wire connecting step, the frame forming step, and the adhesive member arranging step.

[0155] The fixing step of the manufacturing method Pra is performed after the metal wire connecting step. The fixing step of the manufacturing method Pra is a step of bringing the metal wire W1 into contact with the adhesive member b2a so that the metal wire W1 is in the fixed state Stf.

[0156] Hereinafter, the state in which the back surface 7r of the lid 7A faces upward and the main surface 2s of the substrate 2A faces downward will also be referred to as "fixing preparation state A." In the fixing preparation state A, the main surface 5s of the semiconductor element 5 faces downward. In addition, in the fixing preparation state A, the adhesive member b2a is in a softened state due to the heat treatment Ac described below. In the softened state, the adhesive member b2a is soft.

[0157] The fixing step of manufacturing method Pra is performed in fixing preparation state A. The lid 7A and substrate 2A in fixing preparation state A are the lid 7A and substrate 2A shown in FIG. 7(a). FIG. 7(a) shows the aforementioned component Na. The component Na in FIG. 7(a) is obtained by changing the orientation of the component Na in FIG. 6(a) so that the main surface 2s of the substrate 2A of the component Na in FIG. 6(a) faces downward.

[0158] Here, before the fixing step is performed, a substrate reversal process and a heat treatment Ac are performed to generate a fixing preparation state A.

[0159] In the substrate reversal process, the orientation of the structure Na in FIG. 6(a) is changed so that the main surface 2s of the substrate 2A of the structure Na in FIG. 6(a) faces downward.

[0160] Furthermore, before the fixing step is performed, a heat treatment Ac is performed on the adhesive member b2a in a solid state with the back surface 7r of the lid 7A facing upward. In the heat treatment Ac, the adhesive member b2a is heated so that the state of the adhesive member b2a changes from a solid state to a softened state. The heating in the heat treatment Ac is performed, for example, so that the temperature of the adhesive member b2a becomes 100°C or higher. This causes the adhesive member b2a to re-melt.

[0161] Next, in the fixing process of the manufacturing method Pra, a moving process A is performed in which the moving control device moves the aforementioned component Na so that the state of the metal wire W1 becomes the fixed state Stf and the state of the lid 7A becomes the lid fixed state in the fixing preparation status A.

[0162] That is, in the fixing process of the manufacturing method Pra, in the fixing preparation status A, a moving process A is performed in which the moving control device brings the metal wire W1 and the frame 3 into contact with the adhesive member b2a provided on the back surface 7r of the lid 7A so that the state of the metal wire W1 becomes the fixed state Stf and the state of the lid 7A becomes the lid fixed state.

[0163] Movement process A is a process in which the movement control device moves the frame 3 and the metal wire W1 of the component Na. Movement process A is performed so that the frame 3 and the metal wire W1 of the component Na move slowly downward in the state shown in FIG. 7(a). The movement speed of the metal wire W1 in movement process A is, for example, 1 mm / s or less.

[0164] Specifically, the moving process A is performed, for example, so that the tip of the frame 3 comes into contact with the adhesive member b2a and the frame 3 is gradually pushed into the adhesive member b2a. The moving process A is also performed, for example, so that the loop top T1 of the metal wire W1 comes into contact with the softened adhesive member b2a and the loop top T1 is immersed in the adhesive member b2a. The moving process A results in the frame 3 and the metal wire W1 becoming as shown in FIG. 7(b).

[0165] Next, the softened adhesive member b2a shown in Fig. 7(b) is heated continuously, and the adhesive member b2a hardens due to a thermal curing reaction. As a result, the frame 3 is adhered to the lid 7A. Then, the assembly including the hardened adhesive member b2a shown in Fig. 7(b) is transported to a heating furnace.

[0166] Next, in the fixing step of the manufacturing method Pra, the adhesive member b2a is subjected to a heat treatment Ba. The heat treatment Ba is performed, for example, in a heating furnace. In the heat treatment Ba, the adhesive member b2a is heated so that the adhesive member b2a is completely cured. As a result, the adhesive member b2a is cured, and the frame 3 and the metal wire W1 are fixed.

[0167] Next, a bonding step is performed (step S160). In the bonding step of the manufacturing method Pra, as shown in Fig. 7(c), a dicing tape Tp1 is bonded to the main surface 7s of the lid 7A.

[0168] Hereinafter, the component after the bonding step of the manufacturing method Pra is also referred to as "component Aa." The component Aa is the component shown in FIG. 7(c). The component Aa in the manufacturing method Pra of this embodiment includes, as an example, two semiconductor devices 100A.

[0169] Next, a cutting step is performed (step S170). In the cutting step of the manufacturing method Pra, the component Aa is cut with a dicing blade (not shown) so that two semiconductor devices 100A are obtained from the component Aa. The component Aa is cut by moving the dicing blade from the substrate 2A to the lid 7A. Then, each semiconductor device 100A is removed from the dicing tape Tp1, thereby obtaining each semiconductor device 100A.

[0170] (summary) As described above, according to this embodiment, the lid 7A and the adhesive member b2a are translucent. This allows the optical function unit 4 provided on the main surface 5s of the semiconductor element 5 to receive light that has passed through the lid 7A and the adhesive member b2a. Therefore, a structure for exposing the semiconductor element 5 to the outside of the lid 7A is not necessary. This structure is the opening H1. Because the semiconductor element 5 is not exposed to the outside of the lid 7A, it is possible to prevent foreign matter from entering the interior of the semiconductor device 100A. This can improve the production yield of the semiconductor device 100A.

[0171] According to the present embodiment, the adhesive member b2a is a solid adhesive sheet. The adhesive member b2a is configured so that, when attached to the lid 7A, for example, the main surface b2s and the back surface b2r of the adhesive member b2a become flat. Therefore, as shown in FIG. 5, when the adhesive member b2a is attached to the lid 7A, the flatness of the adhesive member b2a above the semiconductor element 5 is high. Therefore, when the semiconductor device 100A is in use, noise such as stray light can be suppressed.

[0172] Furthermore, according to this embodiment, the size of the large adhesive member b2a used in the manufacturing method Pra is larger than the size of the large substrate 2A used in the manufacturing method Pra. Furthermore, the manufacturing method Pra uses a large lid 7A. Therefore, in the adhesive member placement step of the manufacturing method Pra, the large adhesive member b2a can be attached to the large lid 7A all at once, like the dicing tape Tp1. Therefore, the time required to provide the adhesive member b2a in the adhesive member placement step can be shortened.

[0173] Furthermore, according to this embodiment, after the transfer process A in the fixing step of the manufacturing method Pra is performed, the softened adhesive member b2a is heated and thermally hardened. This hardens the adhesive member b2a, and the frame 3 is bonded to the lid 7A. While the frame 3 is bonded to the lid 7A, the adhesive member b2a is in a hardened state. Therefore, in order to perform the above-mentioned heating process Ba, the in-process component having the hardened adhesive member b2a can be stably transported to the heating furnace. Therefore, by using the adhesive member b2a, which is an adhesive sheet, the productivity of the semiconductor device can be improved in the manufacturing method Pra.

[0174] The semiconductor device 100A is mounted on an external substrate by soldering such as reflow soldering. During the reflow soldering period, the temperature of the semiconductor device 100A becomes high. Therefore, the air pressure inside the semiconductor device 100A increases due to the following factor A. Factor A is, for example, gas generation from the resin contained in the semiconductor device 100A. Factor A is, for example, expansion of the air present inside the semiconductor device 100A.

[0175] The substrate 2A of the semiconductor device 100A of this embodiment is provided with a through-hole H2, which is a through-hole. Therefore, as the air pressure inside the semiconductor device 100A increases, gas inside the semiconductor device 100A can be discharged through the through-hole H2. This prevents the lid 7A from coming off due to an increase in air pressure inside the semiconductor device 100A, for example, during reflow soldering. As a result, the production yield of the semiconductor device 100A can be improved.

[0176] (Other variations) It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0177] For example, the adhesive member b2a used in the semiconductor device 100A of the second embodiment is not limited to the above configuration. For example, the adhesive member b2a may have a configuration including multiple layers (hereinafter, also referred to as "modified configuration A").

[0178] Fig. 8 is a cross-sectional view for explaining the configuration of the adhesive member b2a in modified configuration A. In Fig. 8, a protective film FL1 and a lid 7A are shown to facilitate comparison with the adhesive member b2a in Fig. 6(b).

[0179] The infrared transmittance of the adhesive member b2a in the modified configuration A is 90% or more. The adhesive member b2a also has a main surface b2s and a back surface b2r.

[0180] Moreover, the adhesive member b2a in modified configuration A is composed of adhesive layer 15 and adhesive layer 16. Adhesive layer 15 is provided on the back surface b2r side of the adhesive member b2a. Adhesive layer 16 is provided on the main surface b2s side of the adhesive member b2a. Adhesive layer 15 is an ultraviolet curable resin. The ultraviolet curable resin is composed of, for example, epoxy resin, acrylic resin, etc.

[0181] The adhesive layer 16 has the same structure and characteristics as the adhesive member b2a in FIG. 5 according to the second embodiment. That is, the adhesive layer 16 has the same structure and characteristics as the adhesive member b2a in FIG. 6(b). For example, the adhesive layer 16 is made of a thermosetting resin. The resin is an epoxy resin, an acrylic resin, or the like.

[0182] Furthermore, in the adhesive member placement process of step S140 of the manufacturing method Pra in modified configuration A, a UV irradiation process is performed to attach the adhesive member b2a to the lid 7A. The UV irradiation process is a process of irradiating the adhesive layer 15 of the adhesive member b2a with ultraviolet light.

[0183] As described above, even if the adhesive member b2a of the modified configuration A is used in the semiconductor device 100A, the same effects as those of the second embodiment can be obtained.

[0184] Furthermore, for example, in the manufacturing method Pr of the first embodiment, a plurality of semiconductor devices 100 are manufactured, but this is not limiting. The manufacturing method Pr may be configured to manufacture one semiconductor device 100. In this configuration, the manufacturing method Pr uses materials for manufacturing one semiconductor device 100.

[0185] Furthermore, for example, in the manufacturing method Pra of the second embodiment, a plurality of semiconductor devices 100A are manufactured, but this is not limiting. The manufacturing method Pra may be configured to manufacture a single semiconductor device 100A. In this configuration, the manufacturing method Pra uses materials for manufacturing a single semiconductor device 100A.

[0186] Various aspects of the present disclosure are summarized below as appendices. (Appendix 1) A semiconductor device, A substrate; a semiconductor element mounted on the substrate; A metal wire, an adhesive member; the semiconductor element is connected to the substrate by the metal wire; The metal wire is a first end connected to the substrate; a second end connected to the semiconductor element; the adhesive member is located above the substrate; At least a part of the metal wire that is different from the first end is in contact with the adhesive member, the first end of the metal wire is spaced from the adhesive member; Semiconductor device. (Appendix 2) the second end of the metal wire is not in contact with the adhesive member; 2. The semiconductor device according to claim 1. (Appendix 3) a linear portion of the metal wire between the first end and the second end has undulations; the metal wire has a loop top that is the farthest part of the linear portion from the substrate, At least a part of the metal wire that is different from the first end is the loop top, The loop top of the metal wire is in contact with the adhesive member. 3. The semiconductor device according to claim 1 or 2. (Appendix 4) The semiconductor device further comprises: a frame provided on the substrate; a plate-shaped lid that covers at least the metal wire in a plan view, the substrate and the frame accommodate the semiconductor element and the metal wire; The lid is fixed to the frame via the adhesive member. 4. The semiconductor device according to claim 1. (Appendix 5) The semiconductor element has a plate-like shape, the semiconductor element has a first main surface and a first back surface; the first back surface of the semiconductor element is a surface of the semiconductor element opposite to the first main surface, the first back surface of the semiconductor element is fixed to the substrate, an optical function portion having both or either a light emitting function and a light detecting function is provided on the first main surface of the semiconductor element; The lid has an opening for exposing the optical function unit to the outside of the lid. 5. The semiconductor device according to claim 4. (Appendix 6) The semiconductor element has a plate-like shape, the semiconductor element has a first main surface and a first back surface; the first back surface of the semiconductor element is a surface of the semiconductor element opposite to the first main surface, the first back surface of the semiconductor element is fixed to the substrate, an optical function portion having both or either a light emitting function and a light detecting function is provided on the first main surface of the semiconductor element; The lid is translucent, The adhesive member has light-transmitting properties. 5. The semiconductor device according to claim 4. (Appendix 7) The lid has an infrared transmittance of 90% or more, The adhesive member has an infrared transmittance of 90% or more. 7. The semiconductor device according to claim 6. (Appendix 8) the substrate has a second main surface and a second back surface; The substrate has a through hole, the through hole extends from the second main surface of the substrate to the second back surface of the substrate; 8. The semiconductor device according to claim 6 or 7. (Appendix 9) The adhesive member is an adhesive or an adhesive sheet. 9. The semiconductor device according to any one of claims 1 to 8. (Appendix 10) A method for manufacturing a semiconductor device, comprising: The semiconductor device includes: A substrate; A semiconductor element; A metal wire, an adhesive member; The metal wire is a first end portion which is one end of the metal wire; a second end portion which is the other end of the metal wire; The manufacturing method includes: (a) mounting the semiconductor element on the substrate; (b) connecting the semiconductor element to the substrate by the metal wire so that the semiconductor element and the substrate are in a connected state; the connected state is a state in which the first end of the metal wire is connected to the substrate and the second end of the metal wire is connected to the semiconductor element, The manufacturing method further comprises: (c) contacting the metal wire with the adhesive member so that the metal wire is fixed; The fixed state is a first state in which at least a portion of the metal wire that is different from the first end portion is in contact with the adhesive member; a second state in which the first end of the metal wire is spaced from the adhesive member; The step (c) is carried out after the step (b). A method for manufacturing a semiconductor device. (Appendix 11) After the step (b) is performed, a linear portion of the metal wire between the first end and the second end has undulations, After the step (b) is performed, the metal wire has a loop top which is the part of the linear portion farthest from the substrate, In the first state, which is included in the fixed state, at least a part of the portion of the metal wire different from the first end portion is the loop top, The first state included in the fixed state is a state in which the loop top of the metal wire is in contact with the adhesive member. 11. A method for manufacturing a semiconductor device according to claim 10. (Appendix 12) The semiconductor device further includes a plate-shaped lid, The lid has a first major surface and a first rear surface; the substrate has a second main surface and a second back surface; The manufacturing method further comprises: (d) forming a frame on the second main surface of the substrate; (e) providing the adhesive member on the first back surface of the lid, The step (d) is carried out before the step (c), In the step (a), the semiconductor element is mounted on the second main surface of the substrate, The state of the lid includes a lid fixed state, the lid fixed state is a state in which the first back surface of the lid is fixed to the frame via the adhesive member, The step (c) is carried out after the step (b), the step (d), and the step (e); The step (c) is carried out in a fixation preparation state, the fixing preparation state is a state in which the first back surface of the lid faces upward and the second main surface of the substrate faces downward; In the step (c), the metal wire and the frame are brought into contact with the adhesive member provided on the first back surface of the lid so that the state of the metal wire becomes the fixed state and the state of the lid becomes the lid fixed state in the fixing preparation state. 12. A method for manufacturing a semiconductor device according to claim 10 or 11. (Appendix 13) The adhesive member is an adhesive or an adhesive sheet. 13. A method for manufacturing a semiconductor device according to any one of claims 10 to 12. [Explanation of symbols]

[0187] 2,2A substrate, 3 frame, 4 optical function part, 5 semiconductor element, 7,7A lid, 100,100A semiconductor device, b1,b2,b2a adhesive member, e1,e2 end, H1 opening, H2 through hole, T1 loop top, W1 metal wire.

Claims

1. A semiconductor device, A substrate; a semiconductor element mounted on the substrate; A metal wire, an adhesive member; the semiconductor element is connected to the substrate by the metal wire; The metal wire is a first end connected to the substrate; a second end connected to the semiconductor element; the adhesive member is located above the substrate; At least a part of the metal wire that is different from the first end is fixed to the adhesive member, the first end of the metal wire is spaced from the adhesive member; The semiconductor device further comprises: a frame provided on the substrate; a plate-shaped lid that covers at least the metal wire in a plan view, the substrate and the frame accommodate the semiconductor element and the metal wire; the lid is fixed to the frame via the adhesive member, The semiconductor element has a plate-like shape, the semiconductor element has a first main surface and a first back surface; the first back surface of the semiconductor element is a surface of the semiconductor element opposite to the first main surface, the first back surface of the semiconductor element is fixed to the substrate, an optical function portion having both or either a light emitting function and a light detecting function is provided on the first main surface of the semiconductor element; The lid is translucent, The adhesive member has light-transmitting properties. Semiconductor device.

2. the second end of the metal wire is not in contact with the adhesive member; The semiconductor device according to claim 1 .

3. a linear portion of the metal wire between the first end and the second end has undulations; the metal wire has a loop top that is the farthest part of the linear portion from the substrate, At least a part of the portion of the metal wire different from the first end is the loop top, The loop top of the metal wire is fixed to the adhesive member.

3. The semiconductor device according to claim 1.

4. The lid has an infrared transmittance of 90% or more, The adhesive member has an infrared transmittance of 90% or more.

3. The semiconductor device according to claim 1.

5. the substrate has a second main surface and a second back surface; The substrate has a through hole, the through hole extends from the second main surface of the substrate to the second back surface of the substrate; 3. The semiconductor device according to claim 1.

6. The adhesive member is an adhesive or an adhesive sheet.

3. The semiconductor device according to claim 1.

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