Semiconductor Devices

Abstract

This semiconductor device comprises: a plurality of first semiconductor elements, each of which has a first electrode, a second electrode, and a third electrode, and the switching operation of which is controlled in accordance with a first drive signal input to the third electrode; a plurality of first connection members respectively joined to the second electrodes of the plurality of first semiconductor elements; a first detection terminal electrically connected to the second electrodes of the plurality of first semiconductor elements; and first signal wiring electrically interposed between the first detection terminal and the plurality of first connection members. The plurality of first semiconductor elements are electrically connected in parallel, and are aligned in a first direction perpendicular to the thickness directions of the plurality of first semiconductor elements. The first signal wiring includes first pads respectively positioned between two first semiconductor elements adjacent in the first direction as viewed in the thickness direction. Each of the plurality of first connection members is joined to a first pad and a first semiconductor element among the plurality of first semiconductor elements adjacent to said first pad as viewed in the thickness direction.

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Conventionally, semiconductor devices including power semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. In such semiconductor devices, a configuration in which multiple power semiconductor elements are connected in parallel to ensure the allowable current of the semiconductor device is known (see, for example, Patent Document 1). The power module described in Patent Document 1 includes multiple first semiconductor elements, multiple first connection wires, a wiring layer, and a signal terminal. The multiple first semiconductor elements are, for example, MOSFETs. Each first semiconductor element is turned on and off in response to a drive signal input to its gate terminal. The multiple first semiconductor elements are connected in parallel. The multiple first connection wires are, for example, wires, and connect the gate terminals of the multiple first semiconductor elements to the wiring layer. The wiring layer is connected to a signal terminal. The signal terminal is connected to the gate terminal of each first semiconductor element via the wiring layer and each first connection wire. The signal terminal supplies a drive signal for driving each first semiconductor element to the gate terminal of each first semiconductor element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-225493 Summary of the Invention [Problem to be solved by the invention]

[0004] When multiple semiconductor elements are connected in parallel for use, as in Patent Document 1, a resonance phenomenon may occur when each semiconductor element is switched (on / off driven). This resonance phenomenon may cause the drive signals of the multiple semiconductor elements to oscillate, which may cause malfunction or destruction of each semiconductor element.

[0005] The present disclosure has been devised in view of the above circumstances, and one object of the present disclosure is to provide a semiconductor device that can suppress the resonance phenomenon that occurs when multiple semiconductor elements are operated in parallel. [Means for solving the problem]

[0006] The semiconductor device of the present disclosure comprises: a plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, and whose switching operation is controlled in response to a first drive signal input to the third electrode; a plurality of first connection members individually bonded to the second electrodes of the plurality of first semiconductor elements; a first detection terminal conductive to the second electrodes of the plurality of first semiconductor elements; and a first signal wiring portion electrically interposed between the plurality of first connection members and the first detection terminal, wherein the plurality of first semiconductor elements are arranged in a first direction perpendicular to a thickness direction of each of the plurality of first semiconductor elements and are electrically connected in parallel, the first signal wiring portion including first pad portions located between each two first semiconductor elements adjacent to each other in the first direction as viewed in the thickness direction, and each of the plurality of first connection members is bonded to the first pad portion and to a first semiconductor element of the plurality of first semiconductor elements that is adjacent to the first pad portion as viewed in the thickness direction. [Effects of the Invention]

[0007] According to the semiconductor device of the present disclosure, the resonance phenomenon can be suppressed. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. [Figure 2]FIG. 2 is a perspective view of FIG. 1 in which the resin member is omitted. [Figure 3] FIG. 3 is a plan view showing the semiconductor device according to the first embodiment. [Figure 4] FIG. 4 is a plan view of FIG. 3, in which the resin member is shown by imaginary lines. [Figure 5] FIG. 5 is an enlarged plan view of a main part of FIG. 4 (near the first semiconductor element). [Figure 6] FIG. 6 is an enlarged plan view of a main part of FIG. 4 (near the second semiconductor element). [Figure 7] FIG. 7 is a plan view of FIG. 4 in which the control terminals, the detection terminals, the connecting members, and the resin member are omitted. [Figure 8] FIG. 8 is a plan view of FIG. 7 in which some power wiring sections and a plurality of signal wiring sections are omitted. [Figure 9] FIG. 9 is a plan view of FIG. 8 with the insulating substrate omitted. [Figure 10] FIG. 10 is a bottom view showing the semiconductor device according to the first embodiment. [Figure 11] FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. [Figure 13] FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. [Figure 14] FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. [Figure 15] FIG. 15 is an enlarged cross-sectional view of a main part of FIG. 14 (near the first semiconductor element). [Figure 16] FIG. 16 is an enlarged cross-sectional view of a main part (near the second semiconductor element) of FIG. [Figure 17] FIG. 17 is a diagram illustrating an example of a circuit configuration of the semiconductor device according to the first embodiment. [Figure 18] FIG. 18 is a plan view showing the semiconductor device according to the second embodiment, in which the resin member is indicated by imaginary lines. [Figure 19] FIG. 19 is a perspective view showing a semiconductor device according to the third embodiment, in which the resin member is omitted. [Figure 20] FIG. 20 is a plan view showing the semiconductor device according to the third embodiment, in which the resin member is indicated by imaginary lines. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. [Figure 22] FIG. 22 is a plan view showing the semiconductor device according to the fourth embodiment, in which the resin member is indicated by imaginary lines. DETAILED DESCRIPTION OF THE INVENTION

[0009] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar elements will be designated by the same reference numerals, and redundant description will be omitted. Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not intended to necessarily assign any order to their objects.

[0010] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an object) B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an object) B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an object) B" includes "a certain object A is in contact with a certain object B and is located on (an object) B" and "a certain object A is located on (an object) B with another object interposed between the certain object A and the certain object B." Additionally, unless otherwise specified, "when viewed from a certain direction, object A overlaps object B" includes "object A overlaps the entirety of object B" and "object A overlaps part of object B."

[0011] 1 to 17 show a semiconductor device A1 according to a first embodiment. The semiconductor device A1 includes a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a plurality of circuit components 3, a support member 4, an insulating substrate 50, a plurality of power wiring sections 511 to 514, a plurality of signal wiring sections 52 to 56, a pair of control terminals 61 and 62, a plurality of detection terminals 63 to 65, a plurality of connecting members 7, and a resin member 8. The plurality of connecting members 7 include a plurality of connecting members 71, 72, 731, 732, 741, and 742. In Fig. 4, the resin member 8 is indicated by an imaginary line (a two-dot chain line).

[0012] For ease of explanation, the thickness direction of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2, etc., is referred to as the "thickness direction z." In addition, in the following explanation, "plan view" refers to the view in the thickness direction z. A direction perpendicular to the thickness direction z is referred to as the "first direction x." As an example, the first direction x is the left-right direction in the plan view of the semiconductor device A1 (see Figures 3 and 4). A direction perpendicular to the thickness direction z and the first direction x is referred to as the "second direction y." As an example, the second direction y is the up-down direction in the plan view of the semiconductor device A1 (see Figures 3 and 4).

[0013] The plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2 are each, for example, a MOSFET. Instead of a MOSFET, the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2 may each be other switching elements such as a field effect transistor including a metal-insulator-semiconductor FET (MISFET) or a bipolar transistor including an IGBT. The plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2 are each made of silicon carbide (SiC). The semiconductor material is not limited to SiC and may be silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), or gallium oxide (Ga2O3).

[0014] As shown in FIG. 15, each of the multiple first semiconductor elements 1 has an element main surface 10a and an element back surface 10b. The element main surface 10a and the element back surface 10b are spaced apart from each other in the thickness direction z. The element main surface 10a faces one side (upward) in the thickness direction z, and the element back surface 10b faces the other side (downward) in the thickness direction z. The element main surface 10a is an example of a "first element main surface," and the element back surface 10b is an example of a "first element back surface."

[0015] As shown in FIGS. 5 and 15 , each of the multiple first semiconductor elements 1 has a first electrode 11, a second electrode 12, and a third electrode 13. In an example where each first semiconductor element 1 is a MOSFET, the first electrode 11 is a drain, the second electrode 12 is a source, and the third electrode 13 is a gate. In the semiconductor device A1, the second electrode 12 includes a first power pad 121 and two first detection pads 122. The first power pad 121 is used to conduct a main current, which will be described in detail later. Each first detection pad 122 is used to detect a first detection signal corresponding to the conduction state of the second electrode 12. The first detection signal is, for example, a voltage signal corresponding to a source current flowing through the second electrode 12. Each first detection pad 122 is a source sense pad. As shown in FIGS. 5 and 15, in each first semiconductor element 1, the first electrode 11 is arranged on the element back surface 10b, and the second electrode 12 (the first power pad 121 and the two first detection pads 122) and the third electrode 13 are arranged on the element main surface 10a. As shown in FIG. 5, the first power pad 121, the two first detection pads 122, and the third electrode 13 are spaced apart from one another on the element main surface 10a. The two first detection pads 122 are arranged with the third electrode 13 sandwiched between them in the first direction x. Unlike the example shown in FIG. 5 and other examples, the second electrode 12 of each first semiconductor element 1 may be composed of a single pad rather than including the first power pad 121 and the two first detection pads 122.

[0016] When a first drive signal (e.g., gate voltage) is input to the third electrode 13 (gate), each first semiconductor element 1 switches between a conductive state and a cutoff state in response to the first drive signal. This switching between the conductive state and the cutoff state is called a switching operation. In the conductive state, current flows from the first electrode 11 (drain) to the second electrode 12 (source), and in the cutoff state, this current does not flow. That is, in each first semiconductor element 1, the first electrode 11 (drain) and the second electrode 12 (source) are controlled to be turned on and off by the first drive signal (e.g., gate voltage) input to the third electrode 13 (gate). The switching frequency of each first semiconductor element 1 depends on the frequency of the first drive signal. The first electrodes 11 of the multiple first semiconductor elements 1 are electrically connected to each other, and the second electrodes 12 of the multiple first semiconductor elements 1 are electrically connected to each other, as will be described in detail later. As a result, the multiple first semiconductor elements 1 are electrically connected in parallel, as shown in FIG. 17 . The semiconductor device A1 inputs a common first drive signal to a plurality of first semiconductor elements 1 connected in parallel, causing the plurality of first semiconductor elements 1 to operate in parallel.

[0017] 2, 4, and 7 to 9, the multiple first semiconductor elements 1 are arranged in a first direction x. As shown in Fig. 15, each first semiconductor element 1 is bonded to a support member 4 (a conductive plate 41 described below) via a conductive bonding material 19. The conductive bonding material 19 is, for example, solder, a metal paste material, or a sintered metal.

[0018] As shown in FIGS. 4 and 7 to 9, the multiple first semiconductor elements 1 include a pair of first outer elements 1A and one or more first inner elements 1B. In an example in which the semiconductor device A1 includes four first semiconductor elements 1, the multiple first semiconductor elements 1 include two first inner elements 1B. The pair of first outer elements 1A are elements located at both ends of the multiple first semiconductor elements 1 in the first direction x. The first inner element 1B is an element located between the pair of first outer elements 1A in the first direction x, among the multiple first semiconductor elements 1.

[0019] As shown in Fig. 16, each of the multiple second semiconductor elements 2 has an element main surface 20a and an element back surface 20b. The element main surface 20a and the element back surface 20b are spaced apart from each other in the thickness direction z. The element main surface 20a faces one side (upward) in the thickness direction z, and the element back surface 20b faces the other side (downward) in the thickness direction z. The element main surface 20a is an example of a "second element main surface," and the element back surface 20b is an example of a "second element back surface."

[0020] As shown in FIGS. 6 and 16 , each of the second semiconductor elements 2 has a fourth electrode 21, a fifth electrode 22, and a sixth electrode 23. In an example in which each second semiconductor element 2 is a MOSFET, the fourth electrode 21 is a drain, the fifth electrode 22 is a source, and the sixth electrode 23 is a gate. In the semiconductor device A1, the fifth electrode 22 includes a second power pad 221 and two second detection pads 222. The second power pad 221 is used to conduct a main current, which will be described in detail later. Each second detection pad 222 is used to detect a second detection signal corresponding to the conduction state of the fifth electrode 22. The second detection signal is, for example, a voltage signal corresponding to a source current flowing through the fifth electrode 22. Each second detection pad 222 is a source sense pad. 6 and 16, in each second semiconductor element 2, the fourth electrode 21 is disposed on the element back surface 20b, and the fifth electrode 22 (the second power pad 221 and the two second detection pads 222) and the sixth electrode 23 are disposed on the element main surface 20a. As shown in FIG. 6, the second power pad 221, the two second detection pads 222, and the sixth electrode 23 are spaced apart from one another on the element main surface 20a. The two second detection pads 222 are disposed with the sixth electrode 23 sandwiched between them in the first direction x. Unlike the example shown in FIG. 6, the fifth electrode 22 of each second semiconductor element 2 may be configured as a single pad rather than including the second power pad 221 and the two second detection pads 222.

[0021] When a second drive signal (e.g., gate voltage) is input to the sixth electrode 23 (gate), each second semiconductor element 2 switches between a conductive state and a cutoff state in response to the second drive signal. This switching between the conductive state and the cutoff state is called a switching operation. In the conductive state, current flows from the fourth electrode 21 (drain) to the fifth electrode 22 (source), and in the cutoff state, this current does not flow. That is, in each second semiconductor element 2, the fourth electrode 21 (drain) and the fifth electrode 22 (source) are controlled to be turned on and off by the second drive signal (e.g., gate voltage) input to the sixth electrode 23 (gate). The switching frequency of each second semiconductor element 2 depends on the frequency of the second drive signal. The fourth electrodes 21 of the multiple second semiconductor elements 2 are electrically connected to each other, and the fifth electrodes 22 of the multiple second semiconductor elements 2 are electrically connected to each other, as will be described in detail later. As a result, the multiple second semiconductor elements 2 are electrically connected in parallel, as shown in FIG. 17 . In the semiconductor device A1, a common second drive signal is input to the plurality of second semiconductor elements 2 connected in parallel, causing the plurality of second semiconductor elements 2 to operate in parallel.

[0022] 2, 4, and 7 to 9, the multiple second semiconductor elements 2 are arranged in a first direction x. As shown in Fig. 16, each second semiconductor element 2 is bonded to a support member 4 (a conductive plate 42 described below) via a conductive bonding material 29. The conductive bonding material 29 is, for example, solder, a metal paste material, or a sintered metal.

[0023] As shown in FIGS. 4 and 7 to 9, the multiple second semiconductor elements 2 include a pair of second outer elements 2A and one or more second inner elements 2B. In an example in which the semiconductor device A1 includes four second semiconductor elements 2, the multiple second semiconductor elements 2 include two second inner elements 2B. The pair of second outer elements 2A are elements located at both ends of the multiple second semiconductor elements 2 in the first direction x. The second inner element 2B is an element located between the pair of second outer elements 2A in the first direction x, among the multiple second semiconductor elements 2.

[0024] The semiconductor device A1 is configured, for example, as a half-bridge switching circuit. As described above, the multiple first semiconductor elements 1 are connected in parallel to each other to form an upper arm circuit of the semiconductor device A1. As described above, the multiple second semiconductor elements 2 are connected in parallel to each other to form a lower arm circuit of the semiconductor device A1. Each first semiconductor element 1 and each second semiconductor element 2 are connected in series by electrically connecting the second electrode 12 (source) and the fourth electrode 21 (drain) of each first semiconductor element 1 and each second semiconductor element 2. This series connection of each first semiconductor element 1 and each second semiconductor element 2 forms a bridge. In the illustrated example, the semiconductor device A1 includes four first semiconductor elements 1 and four second semiconductor elements 2 (see FIG. 4). The number of first semiconductor elements 1 and second semiconductor elements 2 is not limited to this configuration and can be changed as appropriate depending on the performance required of the semiconductor device A1.

[0025] A plurality of circuit components 3 are disposed on an insulating substrate 50. In the semiconductor device A1, each of the plurality of circuit components 3 is, for example, a ferrite bead. A ferrite bead is an inductance element that increases the impedance of a high-frequency signal (current) relatively more than that of a low-frequency signal. In the illustrated example, each of the plurality of circuit components 3 is a surface-mount type, but may also be a lead type instead of a surface-mount type. As shown in FIGS. 4 and 15, the plurality of circuit components 3 include a plurality of first circuit components 3A and a plurality of second circuit components 3B.

[0026] The plurality of first circuit components 3A are connected to a first conductive member. The first conductive member is electrically connected to the control terminal 61 and is electrically interposed between the third electrodes 13 of the plurality of first semiconductor elements 1. The first conductive member is a transmission path for a first drive signal. The first conductive member includes, for example, a part of the signal wiring portion 52 and a plurality of connecting members 731. The third electrodes 13 of the plurality of first semiconductor elements 1 are electrically connected to each other via at least one of the plurality of first circuit components 3A. The plurality of first circuit components 3A increase impedance in a first frequency band. The first frequency band is higher than the switching frequency of each first semiconductor element 1. The first frequency band includes, for example, a resonant frequency of a resonant circuit formed including the parasitic inductance of the first conductive member. In the semiconductor device A1, this resonant circuit further includes the parasitic capacitance (drain-gate capacitance) of each first semiconductor element 1.

[0027] The second circuit components 3B are connected to the second conductive member. The second conductive member is electrically connected to the control terminal 62 and is electrically interposed between the sixth electrodes 23 of the second semiconductor elements 2. The second conductive member is a transmission path for the second drive signal. The second conductive member includes, for example, a portion of the signal wiring portion 53 and multiple connection members 732. The sixth electrodes 23 of the second semiconductor elements 2 are electrically connected to each other via at least one of the second circuit components 3B. The second circuit components 3B increase impedance in a second frequency band. The second frequency band is higher than the switching frequency of each second semiconductor element 2. The second frequency band includes, for example, a resonant frequency of a resonant circuit formed including the parasitic inductance of the second conductive member. In the semiconductor device A1, this resonant circuit further includes the parasitic capacitance (drain-gate capacitance) of each second semiconductor element 2.

[0028] In this embodiment, the switching frequency of each first semiconductor element 1 is the same as the switching frequency of each second semiconductor element 2, and the multiple first circuit components 3A and the multiple second circuit components 3B are the same type. Therefore, the first frequency band and the second frequency band are the same. Note that even if the switching frequency of each first semiconductor element 1 is the same as the switching frequency of each second semiconductor element 2, the first frequency band and the second frequency band may be different. Furthermore, if the switching frequency of each first semiconductor element 1 is different from the switching frequency of each second semiconductor element 2, the first frequency band and the second frequency band may be the same or different.

[0029] 9 and 14 to 16, the support member 4 supports a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2. As shown in FIG. 9 and 11 to 16, the support member 4 has a pair of conductive plates 41, 42 and a pair of insulating plates 43, 44.

[0030] Each of the pair of conductive plates 41, 42 is made of a conductive material, such as copper or a copper alloy. Alternatively, each of the conductive plates 41, 42 may be a laminate in which copper layers and molybdenum layers are alternately stacked in the thickness direction z. In this case, both surface layers of each of the conductive plates 41, 42 in the thickness direction z are copper layers. As shown in FIG. 9, each of the conductive plates 41, 42 has a rectangular shape in a plan view.

[0031] As shown in FIGS. 9, 14, and 15, the conductive plate 41 has a plurality of first semiconductor elements 1 mounted thereon and supports the plurality of first semiconductor elements 1. The conductive plate 41 is electrically connected to the first electrode 11 (drains) of each of the first semiconductor elements 1. The first electrodes 11 of the plurality of first semiconductor elements 1 are electrically connected to one another via the conductive plate 41. The conductive plate 41 has, for example, a rectangular parallelepiped shape. The dimension of the conductive plate 41 along the thickness direction z is greater than the dimension of the insulating substrate 50 along the thickness direction z. The conductive plate 41 is an example of a "first mounting portion."

[0032] As shown in FIGS. 9, 14, and 15, the conductive plate 41 has a mounting surface 41a. The mounting surface 41a faces one side (upward) in the thickness direction z. The first semiconductor elements 1 are bonded to the mounting surface 41a, and the power wiring portion 511 is also bonded to the mounting surface 41a. As shown in FIGS. 14 and 15, the conductive plate 41 is bonded to the insulating plate 43 via a bonding material 419. The bonding material 419 may be conductive or insulating.

[0033] As shown in FIGS. 9, 14, and 16, the conductive plate 42 has a plurality of second semiconductor elements 2 mounted thereon and supports the plurality of second semiconductor elements 2. The conductive plate 42 is electrically connected to the fourth electrode 21 (drains) of each of the second semiconductor elements 2. The fourth electrodes 21 of the plurality of second semiconductor elements 2 are electrically connected to one another via the conductive plate 42. The conductive plate 42 has, for example, a rectangular parallelepiped shape. The dimension of the conductive plate 42 in the thickness direction z is greater than the dimension of the insulating substrate 50 in the thickness direction z. The conductive plate 42 is an example of a "second mounting portion."

[0034] As shown in FIGS. 9, 14, and 16, the conductive plate 42 has a mounting surface 42a. The mounting surface 42a faces one side (upward) in the thickness direction z. The second semiconductor elements 2 are bonded to the mounting surface 42a, and the power wiring portion 514 is also bonded to the mounting surface 42a. As shown in FIGS. 14 and 16, the conductive plate 42 is bonded to the insulating plate 44 via a bonding material 429. The bonding material 429 may be conductive or insulating.

[0035] Each of the pair of insulating plates 43, 44 is made of an insulating material, such as Al2O3 (aluminum oxide). As shown in FIG. 9, each of the insulating plates 43, 44 has, for example, a rectangular shape in a plan view. As shown in FIGS. 9, 14, and 15, the insulating plate 43 supports the conductive plate 41. As shown in FIGS. 9, 14, and 16, the insulating plate 44 supports the conductive plate 42. A plating layer may be formed on the surface of each of the insulating plates 43, 44 to which the conductive plates 41, 42 are joined. The plating layer may be made of, for example, silver or a silver alloy. In the example shown in FIG. 10, the surface of each of the insulating plates 43, 44 facing the other (downward) side in the thickness direction z is exposed from the resin member 8 (a resin back surface 82 described below), but may be covered by the resin member 8.

[0036] The insulating substrate 50 is made of an insulating material, for example, glass epoxy resin. The insulating substrate 50 may be made of ceramics such as AlN (aluminum nitride), SiN (silicon nitride), or Al2O3 instead of glass epoxy resin.

[0037] As shown in FIGS. 11 to 16, the insulating substrate 50 has a main surface 501 and a back surface 502. The main surface 501 and the back surface 502 are spaced apart in the thickness direction z. The main surface 501 faces one side (upward) in the thickness direction z, and the back surface 502 faces the other side (downward) in the thickness direction z. The main surface 501 is an example of a "substrate main surface," and the back surface 502 is an example of a "substrate back surface."

[0038] As shown in FIGS. 8 and 13 to 16, insulating substrate 50 includes a plurality of through holes 503, a through hole 504, a plurality of openings 505 and a plurality of openings 506. As shown in FIGS.

[0039] As shown in FIG. 13 , each of the multiple through holes 503 penetrates the insulating substrate 50 in the thickness direction z from the main surface 501 to the back surface 502. As shown in FIGS. 8 and 13 , a metal member 59 is inserted into each through hole 503. As shown in FIGS. 8 and 13 , the inner surface of each through hole 503 is not in contact with the metal member 59. Alternatively, the inner surface of each through hole 503 may be in contact with the metal member 59. In the present disclosure, “inserted” refers to a state in which a certain member (e.g., each metal member 59) is inserted into a certain through hole (e.g., each through hole 503), and it is not limited to whether the certain member is in contact with the inner surface of the certain through hole. An insulating member different from the insulating substrate 50 may be formed in the gap between each metal member 59 and the through hole 503.

[0040] The through hole 504 penetrates the insulating substrate 50 in the thickness direction z from the main surface 501 to the back surface 502. As shown in Fig. 8, a metal member 58 is inserted into the through hole 504. In the illustrated example, the inner surface of the through hole 504 is in contact with the metal member 58 (see Fig. 8), but it does not have to be in contact.

[0041] 14 and 15, each of the plurality of openings 505 penetrates the insulating substrate 50 in the thickness direction z from the main surface 501 to the back surface 502. As shown in FIG. 8, each opening 505 surrounds one of the first semiconductor elements 1 in plan view. Each opening 505 is an example of a "first opening."

[0042] 14 and 16, each of the multiple openings 506 penetrates the insulating substrate 50 in the thickness direction z from the main surface 501 to the back surface 502. As shown in Fig. 8, each opening 506 surrounds one of the second semiconductor elements 2 in plan view. Each opening 506 is an example of a "second opening."

[0043] The power wiring sections 511-514 and the signal wiring sections 52-56, together with a portion of the support member 4 (conductive plates 41, 42), the metal members 58, 59, and the connecting members 7, form conduction paths in the semiconductor device A1. The power wiring sections 511-514 and the signal wiring sections 52-56 are spaced apart from one another. The power wiring sections 511-514 and the signal wiring sections 52-56 are made of, for example, copper or a copper alloy. The thickness (dimension in the thickness direction z) and constituent material of each of the power wiring sections 511-514 and the signal wiring sections 52-56 are changed as appropriate depending on the specifications of the semiconductor device A1 (such as rated current, allowable current, rated voltage, withstand voltage, internal inductance of the entire device, and device size).

[0044] The multiple power wiring sections 511 to 514 form a conduction path for the main current in the semiconductor device A1. In the semiconductor device A1, the power wiring section 511 and the power wiring section 512 overlap each other in a plan view, and the power wiring section 513 and the power wiring section 514 overlap each other in a plan view.

[0045] The power wiring section 511 is formed on the rear surface 502 of the insulating substrate 50. As shown in FIGS. 9, 11, and 13 to 15, the power wiring section 511 is joined to the mounting surface 41a of the conductive plate 41. The power wiring section 511 is electrically connected to each of the first electrodes 11 (drains) of the multiple first semiconductor elements 1 via the conductive plate 41.

[0046] As shown in FIGS. 9, 14, and 15, the power wiring portion 511 includes a plurality of openings 511a and through holes 511b. As shown in FIGS. 14 and 15, each of the plurality of openings 511a penetrates the power wiring portion 511 in the thickness direction z. As can be seen from FIGS. 14 and 15, each of the plurality of openings 511a overlaps with a corresponding opening 505 of the insulating substrate 50 in a plan view. As shown in FIG. 9, each opening 511a surrounds a corresponding first semiconductor element 1 in a plan view. The through hole 511b penetrates the power wiring portion 511 in the thickness direction z. As shown in FIG. 9, a metal member 58 is fitted into the through hole 511b, and the inner surface of the through hole 511b is in contact with the metal member 58. In the present disclosure, "fitted" refers to a state in which a certain member (e.g., the metal member 58) is inserted into a certain through hole (e.g., the through hole 511b) and the certain member is in contact with the inner surface of the certain through hole. In other words, the "fitted" state corresponds to the "inserted" state in which the plug is in contact with the inner surface of the through-hole.

[0047] The power wiring portion 512 is formed on the main surface 501 of the insulating substrate 50. As can be seen from FIGS. 4 and 6, the power wiring portion 512 is electrically connected to the fifth electrodes 22 (sources) of the second semiconductor elements 2 via a plurality of connection members 72. The power wiring portion 512 is formed so as to avoid the plurality of first semiconductor elements 1 in a plan view.

[0048] The power wiring portion 513 is formed on the main surface 501 of the insulating substrate 50. In plan view, the power wiring portion 513 is located on one side in the second direction y (lower side in FIG. 6 ) than the power wiring portion 512. As can be seen from FIGS. 4 and 5 , the power wiring portion 513 is electrically connected to the second electrodes 12 (sources) of each first semiconductor element 1 via a plurality of connection members 71. Furthermore, the power wiring portion 513 is electrically connected to the fourth electrodes 21 (drains) of each second semiconductor element 2 via the power wiring portion 514 and each metal member 59, with a configuration that will be described in detail later. The power wiring portion 513 is formed so as to avoid each of the plurality of second semiconductor elements 2 in plan view.

[0049] 7 and 13, the power wiring section 513 includes a plurality of through holes 513a. As shown in Fig. 13, each of the plurality of through holes 513a penetrates the power wiring section 513 in the thickness direction z. As shown in Fig. 7 and 13, one of a plurality of metal members 59 is fitted into each of the through holes 513a, and the inner surface of each through hole 513a is in contact with the corresponding metal member 59. In the illustrated example, each through hole 513a is circular in plan view (see Fig. 7), but this may be changed as appropriate depending on the shape of each metal member 59.

[0050] The power wiring section 514 is formed on the rear surface 502 of the insulating substrate 50. As shown in FIGS. 9, 12 to 14, and 16, the power wiring section 514 is joined to the mounting surface 42a of the conductive plate 42. The power wiring section 514 is electrically connected to each of the fourth electrodes 21 (drains) of the plurality of second semiconductor elements 2 via the conductive plate 42. Furthermore, the power wiring section 514 is electrically connected to the second electrodes 12 (sources) of each of the first semiconductor elements 1 via the power wiring section 513 and each metal member 59, using a configuration that will be described in detail later.

[0051] As shown in FIGS. 9, 13, 14, and 16, the power wiring portion 514 includes a plurality of openings 514a and a plurality of through holes 514b. As shown in FIGS. 14 and 16, each of the plurality of openings 514a penetrates the power wiring portion 514 in the thickness direction z. As can be seen from FIGS. 14 and 16, each of the plurality of openings 514a overlaps with a corresponding opening 506 of the insulating substrate 50 in a planar view. As shown in FIG. 9, each of the openings 514a surrounds a corresponding second semiconductor element 2 in a planar view. As shown in FIG. 13, each of the plurality of through holes 514b penetrates the power wiring portion 514 in the thickness direction z. As can be seen from FIG. 13, each of the through holes 514b overlaps with a corresponding through hole 513a of the power wiring portion 513 in a planar view. A plurality of metal members 59 are fitted into each of the through holes 514b.

[0052] The semiconductor device A1 includes a first power terminal 5P, a second power terminal 5N, and two third power terminals 5O. The first power terminal 5P and the second power terminal 5N are connected to, for example, an external DC power supply, and a power supply voltage (DC voltage) is applied to them. In the semiconductor device A1, the first power terminal 5P is a P terminal connected to the positive pole of the DC power supply, and the second power terminal 5N is an N terminal connected to the negative pole of the DC power supply. The DC voltage applied to the first power terminal 5P and the second power terminal 5N is converted to an AC voltage by the switching operations of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2. The converted voltages (AC voltages) are output from the two third power terminals 5O, respectively. The main current in the semiconductor device A1 is generated by the power supply voltage and the converted voltage.

[0053] As shown in FIGS. 4, 7, and 9 to 11, the first power terminal 5P is part of the power wiring section 511. Therefore, the power wiring section 511 includes the first power terminal 5P. As shown in FIGS. 4, 7, and 9 to 11, the first power terminal 5P is located at the end of the power wiring section 511 on one side in the first direction x (the right side in FIG. 4). Because the first power terminal 5P is part of the power wiring section 511, it is electrically connected to each of the first electrodes 11 (drains) of the multiple first semiconductor elements 1.

[0054] 2 to 4, 7, and 11, the second power terminal 5N is part of the power wiring section 512. Therefore, the power wiring section 512 includes the second power terminal 5N. As shown in FIGS. 2 to 4, 7, and 11, the second power terminal 5N is located at the end of the power wiring section 512 on one side in the first direction x (the right side in FIG. 4). Because the second power terminal 5N is part of the power wiring section 512, it is electrically connected to the fifth electrode 22 (source) of each second semiconductor element 2.

[0055] As shown in FIGS. 2 to 4, 7, and 12, one of the two third power terminal portions 5O is part of the power wiring portion 513. Thus, the power wiring portion 513 includes one of the two third power terminal portions 5O. As shown in FIGS. 2 to 4, 7, and 12, one of the two third power terminal portions 5O is located at an end of the power wiring portion 513 on one side in the first direction x (the right side in FIG. 4). The other of the two third power terminal portions 5O is part of the power wiring portion 514, as shown in FIGS. 4, 7, 9, 10, and 12. Thus, the power wiring portion 514 includes the other of the two third power terminal portions 5O. As shown in FIGS. 4, 7, 9, 10, and 12, the other of the two third power terminal portions 5O is located at an end of the power wiring portion 514 on one side in the first direction x (the right side in FIG. 4). Each of the two third power terminal portions 5O is part of either the power wiring portion 513 or the power wiring portion 514, and is therefore electrically connected to the second electrode 12 (source) of each first semiconductor element 1 and the fourth electrode 21 (drain) of each second semiconductor element 2.

[0056] The first power terminal 5P, the second power terminal 5N, and the two third power terminals 5O are spaced apart from one another and, as shown in Figures 1, 3, and 10 to 12, are each exposed from the resin member 8. The surfaces of the first power terminal 5P, the second power terminal 5N, and the two third power terminals 5O may or may not be plated.

[0057] 7, 9, and 11, the first power terminal 5P and the second power terminal 5N overlap each other in a planar view. As can be seen from FIGS. 7, 9, and 12, the two third power terminals 5O overlap each other in a planar view. In the illustrated example, the semiconductor device A1 includes two third power terminals 5O, but, unlike this configuration, the semiconductor device A1 may include only one of the two third power terminals 5O.

[0058] The plurality of signal wiring portions 52 to 56 form conduction paths for control signals in the semiconductor device A1. Each of the plurality of signal wiring portions 52 to 56 is formed on the main surface 501 of the insulating substrate 50, as shown in FIGS.

[0059] 2 and 4, the signal wiring portion 52 is conductively connected to the control terminal 61. The signal wiring portion 52 is electrically connected to each of the third electrodes 13 of the plurality of first semiconductor elements 1. The signal wiring portion 52, together with the plurality of connection members 731, forms a transmission path for transmitting the first drive signal. As shown in FIGS. 4, 7, and 11, the signal wiring portion 52 includes a joint portion 521, a plurality of individual portions 522, and an extending portion 523.

[0060] 4 and 11, the control terminal 61 is joined to the joint portion 521. As shown in FIGS. 4 and 7, the joint portion 521 is located at the end of the insulating substrate 50 on the other side in the first direction x (the left side in FIG. 4) in plan view. The joint portion 521 is electrically connected to a plurality of individual portions 522.

[0061] As shown in FIGS. 4, 7, and 11, the multiple individual parts 522 are arranged along the first direction x and spaced apart from one another. As shown in FIGS. 4 and 7, each of the multiple individual parts 522 has a strip shape extending in the first direction x in a plan view. As shown in FIGS. 4, 7, and 11, each of the multiple individual parts 522 is joined to one of the multiple connection members 731 and to one of the multiple first circuit components 3A. Two individual parts 522 adjacent in the first direction x are electrically connected via the first circuit component 3A. As shown in FIGS. 4 and 7, the multiple individual parts 522 are located on the opposite side of the multiple first semiconductor elements 1 in the second direction y from the side on which the multiple second semiconductor elements 2 are located (upper side in FIG. 4). The multiple individual parts 522 are located on one side of the joint part 521 in the first direction x (right side in FIG. 4).

[0062] The extending portion 523 extends from the joint portion 521 to any one of the multiple individual portions 522. The extending portion 523 electrically connects the joint portion 521 to any one of the multiple individual portions 522. In the example shown in FIGS. 4 and 7, the extending portion 523 is connected to the individual portion 522 that is closest to the joint portion 521 in the first direction x, among the multiple individual portions 522. In the example shown in FIG. 4, the individual portion 522 connected to the extending portion 523 is located closest to the other side in the first direction x (the left side in FIG. 4) among the multiple individual portions 522.

[0063] As shown in FIGS. 2 and 4, the signal wiring portion 53 is conductively connected to the control terminal 62. The signal wiring portion 53 is electrically connected to each of the sixth electrodes 23 of the plurality of second semiconductor elements 2. The signal wiring portion 53, together with the plurality of connecting members 732, forms a transmission path for transmitting the second drive signal. A plurality of second circuit components 3B are joined to the signal wiring portion 53. As shown in FIGS. 4, 7, and 12, the signal wiring portion 53 includes a joint portion 531, a plurality of individual portions 532, and an extending portion 533.

[0064] 4, the control terminal 61 is joined to the joint portion 531. As shown in FIGS. 4 and 7, the joint portion 531 is located at an end portion of the insulating substrate 50 on the other side in the first direction x (the left side in FIG. 4) in a plan view. The joint portion 531 is electrically connected to a plurality of individual portions 532.

[0065] As shown in FIGS. 4, 7, and 12, the multiple individual parts 532 are arranged along the first direction x and spaced apart from one another. As shown in FIGS. 4 and 7, each of the multiple individual parts 532 has a strip shape extending in the first direction x in a plan view. As shown in FIGS. 4, 7, and 12, each of the multiple individual parts 532 is joined to one of the multiple connection members 732 and to one of the multiple second circuit components 3B. Two individual parts 532 adjacent in the first direction x are electrically connected via the second circuit component 3B. As shown in FIGS. 4 and 7, the multiple individual parts 532 are located on the opposite side of the multiple second semiconductor elements 2 in the second direction y from the side on which the multiple first semiconductor elements 1 are located (the lower side in FIG. 4). The multiple individual parts 532 are located on one side of the joint part 531 in the first direction x (the right side in FIG. 4).

[0066] The extending portion 533 extends from the joint portion 531 to any one of the multiple individual portions 532. The extending portion 533 electrically connects the joint portion 531 to any one of the multiple individual portions 532. In the example shown in FIGS. 4 and 7, the extending portion 533 is connected to the individual portion 532 that is closest to the joint portion 531 in the first direction x, among the multiple individual portions 532. In the example shown in FIG. 4, the individual portion 532 connected to the extending portion 533 is located closest to the other side in the first direction x (the left side in FIG. 4) among the multiple individual portions 532. In the example shown in FIGS. 4 and 7, most of the extending portion 533 is strip-shaped extending in the second direction y in a plan view.

[0067] As shown in FIGS. 2 and 4, the signal wiring portion 54 is conductively connected to the detection terminal 63. The signal wiring portion 54 is electrically connected to each of the second electrodes 12 of the plurality of first semiconductor elements 1. The signal wiring portion 54, together with the plurality of connection members 741, forms a transmission path for transmitting the first detection signal. The signal wiring portion 54 is an example of a "first signal wiring portion." As shown in FIGS. 4 and 7, the signal wiring portion 54 includes a joint portion 541, a strip portion 542, a plurality of pad portions 543, and an extension portion 544. In the semiconductor device A1, the joint portion 541, the strip portion 542, the plurality of pad portions 543, and the extension portion 544 are integrally formed.

[0068] As shown in Fig. 4, the detection terminal 63 is joined to the joint 541. The joint 541 is an end of the insulating substrate 50 in a plan view, and is located at the end on the other side in the first direction x (the left side in Fig. 4). The joint 541 is an example of a "first joint."

[0069] As shown in FIGS. 4 and 7, the strip portion 542 extends in the first direction x in a plan view. The first direction x is the longitudinal direction of the strip portion 542. In the example shown in FIGS. 4 and 7, the strip portion 542 is located on one side in the second direction y of the multiple first semiconductor elements 1 (upper side in FIG. 4) in a plan view. Furthermore, the strip portion 542 is sandwiched in the second direction y between the multiple first semiconductor elements 1 and the multiple individual portions 522 in a plan view. The strip portion 542 is located on one side in the first direction x of the joint portion 541 (right side in FIG. 4). The strip portion 542 is an example of a "first strip portion."

[0070] As shown in FIGS. 4, 5, and 7, the pad portions 543 are formed between two adjacent first semiconductor elements 1 in the first direction x in a plan view. In the example shown in FIG. 4, the pad portions 543 are arranged between one of the pair of first outer elements 1A and the adjacent first inner element 1B, between the other of the pair of first outer elements 1A and the adjacent first inner element 1B, and between the two first inner elements 1B. As shown in FIGS. 4 and 5, two connecting members 741 are bonded to each of the pad portions 543. Each of the pad portions 543 is connected to a strip portion 542. In this embodiment, the pad portions 543 are connected to an edge of the strip portion 542 on the side where the first semiconductor elements 1 are located in the second direction y. Each of the pad portions 543 overlaps the strip portion 542 when viewed in the second direction y. Unlike the illustrated example, each pad portion 543 may be separated from the strip portion 542. In this case, each pad portion 543 and the strip portion 542 may be electrically connected by, for example, a bonding wire. Each strip portion 542 is an example of a "first pad portion."

[0071] 4 and 7, the extending portion 544 extends from the joint portion 541 to the strip portion 542. The extending portion 544 electrically connects the joint portion 541 and the strip portion 542.

[0072] As shown in FIGS. 2 and 4, the signal wiring portion 55 is electrically connected to the detection terminal 64. The signal wiring portion 55 is electrically connected to each of the second electrodes 12 of the plurality of second semiconductor elements 2. The signal wiring portion 55, together with the plurality of connection members 742, forms a transmission path for transmitting the second detection signal. The signal wiring portion 55 is an example of a "second signal wiring portion." As shown in FIGS. 4 and 7, the signal wiring portion 55 includes a joint portion 551, a strip portion 552, a plurality of pad portions 553, and an extension portion 554. In the semiconductor device A1, the joint portion 551, the strip portion 552, the plurality of pad portions 553, and the extension portion 554 are integrally formed.

[0073] As shown in Fig. 4, the detection terminal 64 is joined to the joint 551. The joint 551 is an end of the insulating substrate 50 in a plan view, and is located at the end on the other side in the first direction x (the left side in Fig. 4). The joint 551 is an example of a "second joint."

[0074] As shown in FIGS. 4 and 7, the strip portion 552 extends in the first direction x in a plan view. The first direction x is the longitudinal direction of the strip portion 552. In the example shown in FIGS. 4 and 7, the strip portion 552 is located on the other side in the second direction y of the multiple second semiconductor elements 2 (the lower side in FIG. 4) in a plan view. Furthermore, the strip portion 552 is sandwiched in the second direction y between the multiple second semiconductor elements 2 and the multiple individual portions 532 in a plan view. The strip portion 552 is located on one side in the first direction x of the joint portion 551 (the right side in FIG. 4). The strip portion 552 is parallel (or approximately parallel) to the strip portion 542 in a plan view. The strip portion 552 is an example of a "second strip portion."

[0075] As shown in FIGS. 4, 6, and 7, the pad portions 553 are formed between two adjacent second semiconductor elements 2 in the first direction x in a plan view. In the example shown in FIGS. 4 and 7, the pad portions 553 are arranged between one of the pair of second outer elements 2A and the adjacent second inner element 2B, between the other of the pair of second outer elements 2A and the adjacent second inner element 2B, and between two second inner elements 2B. As shown in FIGS. 4 and 6, two connecting members 742 are bonded to each of the pad portions 553. Each of the pad portions 553 is connected to a strip portion 552. In this embodiment, the pad portions 553 are connected to an edge of the strip portion 552 on the side where the second semiconductor elements 2 are located in the second direction y. The pad portions 553 overlap the strip portion 552 when viewed in the second direction y. Unlike the illustrated example, each pad portion 553 may be separated from the strip portion 552. In this case, each pad portion 553 and the strip portion 552 may be electrically connected by, for example, a bonding wire. Each pad portion 553 is an example of a "second pad portion."

[0076] 4 and 7, the extension portion 554 extends from the joint portion 551 to the strip portion 552. The extension portion 554 electrically connects the joint portion 551 and the strip portion 552. In the example shown in FIGS. 4 and 7, most of the extension portion 554 is strip-shaped and extends in the second direction y.

[0077] As shown in FIG. 2, the signal wiring portion 56 is conductively joined to the detection terminal 65. The signal wiring portion 56 is electrically connected to each of the first electrodes 11 of the plurality of first semiconductor elements 1. As shown in FIG. 7, a through hole 561 is formed in the signal wiring portion 56. The through hole 561 penetrates the signal wiring portion 56 in the thickness direction z. As shown in FIG. 7, a metal member 58 is fitted in the through hole 561.

[0078] As shown in Fig. 11, each of the plurality of metal members 59 penetrates the insulating substrate 50 in the thickness direction z, and electrically connects the power wiring portion 513 and the power wiring portion 514. Each of the metal members 59 is, for example, columnar. In the illustrated example, the shape of each of the metal members 59 in a plan view is circular (see Figs. 5 to 8), but the shape of each of the metal members 59 in a plan view may not be circular but may instead be elliptical or polygonal. Each of the metal members 59 is made of, for example, copper or a copper alloy.

[0079] As shown in FIGS. 6 to 8 and 11 , the plurality of metal members 59 are fitted into the through holes 513a of the power wiring section 513 and the through holes 514b of the power wiring section 514, and are inserted into the through holes 503 of the insulating substrate 50. Each metal member 59 contacts the inner surface of each through hole 513a and the inner surface of each through hole 514b. Each metal member 59 is supported by being fitted into each through hole 513a and each through hole 514b. At this time, if gaps occur between each metal member 59 and the inner surface of each through hole 513a and between each metal member 59 and the inner surface of each through hole 514b, solder may be poured into these gaps. This fills the gaps with solder, and each metal member 59 is fixed to the power wiring section 513 and the power wiring section 514. When the solder is poured, the gaps between the metal members 59 and the inner surfaces of the through holes 503 of the insulating substrate 50 can also be filled with the solder.

[0080] The metal member 58 penetrates the insulating substrate 50 in the thickness direction z, and electrically connects the power wiring portion 511 and the signal wiring portion 56. The metal member 58 is, for example, columnar. In the illustrated example, the shape of the metal member 58 in a plan view is circular (see FIGS. 6 to 8), but the shape of the metal member 58 in a plan view may not be circular, but may instead be elliptical or polygonal. The metal member 58 is made of, for example, copper or a copper alloy.

[0081] 7 to 9, the metal member 58 is fitted into the through hole 561 of the signal wiring portion 56 and the through hole 511b of the power wiring portion 511, and is also inserted into the through hole 504 of the insulating substrate 50. As shown in FIGS. 7 to 9, the metal member 58 is in contact with the inner surfaces of the through holes 561, 511b, and 504. At this time, if gaps are formed between the metal member 58 and the inner surfaces of the through holes 561, 511b, and 504, solder may be poured into these gaps. This fills the gaps with solder, and the metal member 58 is fixed to the power wiring portion 511, the signal wiring portion 56, and the insulating substrate 50.

[0082] In the semiconductor device A1, as shown in FIGS. 14 and 15 , each first semiconductor element 1 is housed in a recess formed by the openings 505 of the insulating substrate 50, the openings 511a of the power wiring portion 511, and the conductive plate 41. In the illustrated example, the element main surface 10a of each first semiconductor element 1 overlaps either the insulating substrate 50 or the power wiring portion 511 when viewed in a direction perpendicular to the thickness direction z (e.g., the second direction y), but may also overlap the power wiring portion 512. In either case, each first semiconductor element 1 does not protrude above the power wiring portion 512 in the thickness direction z. Similarly, as shown in FIGS. 14 and 16 , each second semiconductor element 2 is housed in a recess formed by the openings 506 of the insulating substrate 50, the openings 514a of the power wiring portion 514, and the conductive plate 42. In the illustrated example, the element main surface 20a of each second semiconductor element 2 overlaps either the insulating substrate 50 or the power wiring portion 514 when viewed in a direction perpendicular to the thickness direction z (for example, the second direction y), but may also overlap the power wiring portion 513. In either case, each second semiconductor element 2 does not protrude above the power wiring portion 513 in the thickness direction z.

[0083] The control terminals 61, 62 and the detection terminals 63-65 are each made of a conductive material. This conductive material is, for example, copper or a copper alloy. The control terminals 61, 62 and the detection terminals 63-65 are each formed by cutting out and bending a plate-like member. As shown in FIGS. 1-4 and 10, the control terminals 61, 62 and the detection terminals 63-65 are each located on the other side of the first direction x (the left side in FIG. 4) of the first semiconductor elements 1 and the second semiconductor elements 2, and are located on the opposite side of the first power terminal 5P, the second power terminal 5N, and the two third power terminals 5O from the first semiconductor elements 1 and the second semiconductor elements 2.

[0084] The control terminal 61 is electrically connected to the third electrode 13 (gate) of each first semiconductor element 1. A first drive signal that controls the switching operation of each first semiconductor element 1 is input to the control terminal 61. As shown in FIGS. 1 to 4, 10, and 11, the control terminal 61 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. The portion of the control terminal 61 that is covered with the resin member 8 is joined to the joint 521 of the signal wiring section 52. The portion of the control terminal 61 that is exposed from the resin member 8 is connected to an external control device (for example, a gate driver), and the first drive signal (gate voltage) is input from the control device.

[0085] The control terminal 62 is electrically connected to the sixth electrode 23 (gate) of each second semiconductor element 2. A second drive signal that controls the switching operation of each second semiconductor element 2 is input to the control terminal 62. As shown in FIGS. 1 to 4 and 10, the control terminal 62 includes a portion that is covered with the resin member 8 and a portion that is exposed from the resin member 8. The portion of the control terminal 62 that is covered with the resin member 8 is joined to a joint portion 531 of the signal wiring portion 53.

[0086] The detection terminal 63 is electrically connected to the second electrode 12 (source) of each first semiconductor element 1. The detection terminal 63 outputs a first detection signal indicating the conduction state of each first semiconductor element 1. In the semiconductor device A1, a voltage (a voltage corresponding to the source current) applied to the second electrode 12 of each first semiconductor element 1 is output from the detection terminal 63 as the first detection signal. As shown in FIGS. 1 to 4 and 10, the detection terminal 63 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. The portion of the detection terminal 63 covered with the resin member 8 is joined to the joint portion 541 of the signal wiring portion 54. The portion of the detection terminal 63 exposed from the resin member 8 is connected to the external control device and outputs a first detection signal from the control device. The detection terminal 63 is an example of a "first detection terminal."

[0087] The detection terminal 64 is electrically connected to the fifth electrode 22 (source) of each second semiconductor element 2. The detection terminal 64 outputs a second detection signal indicating the conduction state of each second semiconductor element 2. In the semiconductor device A1, a voltage (a voltage corresponding to the source current) applied to the fifth electrode 22 of each second semiconductor element 2 is output from the detection terminal 64 as the second detection signal. As shown in FIGS. 1 to 4 and 10, the detection terminal 64 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. The portion of the detection terminal 64 pressed against the resin member 8 is joined to the joint portion 551 of the signal wiring portion 55. The portion of the detection terminal 64 exposed from the resin member 8 is connected to the external control device and outputs a second detection signal to the control device. The detection terminal 64 is an example of a "second detection terminal."

[0088] The detection terminal 65 is electrically connected to the first electrode 11 (drain) of each first semiconductor element 1. The detection terminal 65 outputs a voltage (a voltage corresponding to the drain current) applied to the first electrode 11 of each first semiconductor element 1. As shown in FIGS. 1 to 4 and 10, the detection terminal 65 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. The portion of the detection terminal 65 covered with the resin member 8 is joined to the signal wiring portion 56. The portion of the detection terminal 65 exposed from the resin member 8 is connected to the external control device, and outputs a voltage (a voltage corresponding to the drain current) applied to the first electrode 11 of each first semiconductor element 1 to the control device.

[0089] Each of the multiple connection members 7 electrically connects two parts spaced apart from each other. As described above, the multiple connection members 7 include multiple connection members 71, 72, 731, 732, 741, and 742. Each of the multiple connection members 7 is, for example, a bonding wire. Some of the multiple connection members 7 (for example, the multiple connection members 71 and 72) may be a metal plate material instead of a bonding wire. Each of the multiple connection members 7 may be made of gold, aluminum, or copper.

[0090] 4 and 5, the multiple connection members 71 are respectively bonded to the first power pads 121 of the second electrodes 12 (sources) of the multiple first semiconductor elements 1 and the power wiring portion 513, thereby establishing electrical continuity between them. A main current in the semiconductor device A1 flows through the multiple connection members 71. Unlike the illustrated example, some of the connection members 71 may be bonded to the upper surface of the metal member 59 instead of the power wiring portion 513.

[0091] 4 and 6, the plurality of connection members 72 are joined to the second power pads 221 of the fifth electrodes 22 (sources) of the plurality of second semiconductor elements 2 and the power wiring portion 512, respectively, to establish electrical continuity therebetween. A main current in the semiconductor device A1 flows through the plurality of connection members 72.

[0092] As shown in FIGS. 4 and 5 , the multiple connection members 731 are respectively joined to the third electrodes 13 (gates) of the multiple first semiconductor elements 1 and the individual portions 522 of the signal wiring portion 52, thereby conducting the same. The multiple connection members 731 transmit a first drive signal together with the signal wiring portion 52. Each connection member 731 is part of the first conductive member. In two first semiconductor elements 1 out of the multiple first semiconductor elements 1, the connection member 731 connected to one first semiconductor element 1, the connection member 731 connected to the other first semiconductor element 1, and the portions of the signal wiring portion 52 to which these connection members 731 are connected form the first conductive member.

[0093] 4 and 6, the plurality of connection members 732 are respectively joined to the sixth electrodes 23 (gates) of the plurality of second semiconductor elements 2 and the individual portions 532 of the signal wiring portion 53, thereby conducting the same. The plurality of connection members 732 transmit the second drive signal together with the signal wiring portion 53. Each connection member 732 is part of the second conductive member. In two of the plurality of second semiconductor elements 2, the second conductive member is formed by the connection member 732 connected to one second semiconductor element 2, the connection member 732 connected to the other second semiconductor element 2, and the portions of the signal wiring portion 53 to which the connection members 732 are connected.

[0094] 4 and 5, in the semiconductor device A1, the direction in which each connecting member 731 extends in a plan view is inclined at a larger angle with respect to the arrangement direction (first direction x) of the multiple first semiconductor elements 1 than with respect to the direction (second direction y) perpendicular to the arrangement direction and thickness direction z. Also, as shown in FIGS. 4 and 6, the direction in which each connecting member 732 extends in a plan view is inclined at a larger angle with respect to the arrangement direction (first direction x) of the multiple second semiconductor elements 2 than with respect to the direction (second direction y) perpendicular to the arrangement direction and thickness direction z.

[0095] As shown in FIGS. 4 and 5 , each of the multiple connection members 741 is bonded to a pad portion 543 (signal wiring portion 53) and a first semiconductor element 1 adjacent to the pad portion 543 in a plan view, thereby electrically connecting them. As shown in FIG. 5 , each connection member 741 is bonded to a first detection pad 122 of the second electrode 12 (source) of each first semiconductor element 1. As shown in FIGS. 4 and 5 , the connection member 741 bonded to the first detection pad 122 on one side of each first semiconductor element 1 in the first direction x is bonded to the pad portion 543 adjacent to the first semiconductor element 1 on one side of the first direction x in a plan view. Furthermore, the connection member 741 bonded to the first detection pad 122 on the other side of each first semiconductor element 1 in the first direction x is bonded to the pad portion 543 adjacent to the first semiconductor element 1 on the other side of the first direction x in a plan view. As shown in FIGS. 4 and 5, in each of the pair of first outer elements 1A, a connecting member 741 is joined to one of the two first detection pads 122, and in each of the plurality of first inner elements 1B, a connecting member 741 is joined to both of the two first detection pads 122. The plurality of connecting members 741 transmit first detection signals. In an example in which the second electrode 12 of each first semiconductor element 1 is formed by one pad, each connecting member 741 is joined to that pad together with the connecting member 71. Each connecting member 741 is an example of a "first connecting member."

[0096] As shown in FIGS. 4 and 6 , each of the multiple connection members 742 is bonded to a pad portion 553 (signal wiring portion 54) and a second semiconductor element 2 adjacent to the pad portion 553 in a plan view, thereby electrically connecting them. As shown in FIG. 6 , each connection member 742 is bonded to the second detection pad 222 of the fifth electrode 22 (source) of each second semiconductor element 2. As shown in FIGS. 4 and 6 , the connection member 742 bonded to the second detection pad 222 on one side of each second semiconductor element 2 in the first direction x is bonded to the pad portion 553 adjacent to the second semiconductor element 2 on one side of the first direction x in a plan view. Furthermore, the connection member 742 bonded to the second detection pad 222 on the other side of each second semiconductor element 2 in the first direction x is bonded to the pad portion 553 adjacent to the second semiconductor element 2 on the other side of the first direction x in a plan view. 4 and 6, in each of the pair of second outer elements 2A, a connecting member 742 is joined to one of the two second detection pads 222, and in each of the plurality of second inner elements 2B, a connecting member 742 is joined to both of the two second detection pads 222. In an example in which the fifth electrode 22 of each second semiconductor element 2 is formed by one pad, each connecting member 742 is joined to that pad together with the connecting member 72. Each connecting member 742 is an example of a "second connecting member."

[0097] 4 and 5, in the semiconductor device A1, the inclination of the direction in which each connecting member 741 extends in a plan view relative to the arrangement direction (first direction x) of the multiple first semiconductor elements 1 is smaller than the inclination of the direction in which each connecting member 742 extends in a plan view relative to the arrangement direction (first direction x) of the multiple second semiconductor elements 2 is smaller than the inclination of the direction in which each connecting member 742 extends in a plan view relative to the arrangement direction (first direction x) of the multiple second semiconductor elements 2 is smaller than the inclination of the direction in which each connecting member 742 extends in a plan view relative to the arrangement direction and the direction in which each connecting member 742 extends in a plan view relative to the arrangement direction and the thickness direction z (second direction y).

[0098] The wire diameters of the multiple connecting members 71, 72, 731, 732, 741, and 742 are not particularly limited, but in the semiconductor device A1, the wire diameters have the following relationship: The wire diameters of the multiple connecting members 71 and 72 are larger than the wire diameters of the multiple connecting members 731, 732, 741, and 742. This is because the main current flows through the multiple connecting members 71 and 72. Furthermore, the wire diameters of the multiple connecting members 741 and 742 are larger than the wire diameters of the multiple connecting members 731 and 732.

[0099] The resin member 8 is a sealing material that protects the plurality of first semiconductor elements 1, the plurality of second semiconductor elements 2, and the plurality of circuit components 3. The resin member 8 is made of an insulating resin material. The resin material is, for example, black epoxy resin. In the semiconductor device A1, the resin member 8 covers the plurality of first semiconductor elements 1, the plurality of second semiconductor elements 2, the plurality of circuit components 3, part of the support member 4, the insulating substrate 50, part of each of the plurality of power wiring portions 511-514, the plurality of signal wiring portions 52-56, part of each of the plurality of control terminals 61, 62, part of each of the plurality of detection terminals 63-65, and the plurality of connection members 7. As shown in FIGS. 3 and 10, the resin member 8 is rectangular in plan view.

[0100] As shown in FIGS. 1, 3, 4, and 10 to 14, the resin member 8 has a resin main surface 81, a resin back surface 82, and multiple resin side surfaces 831 to 834. As shown in FIGS. 10 to 14, the resin main surface 81 and the resin back surface 82 are spaced apart in the thickness direction z. The resin main surface 81 faces one side (upward) in the thickness direction z, and the resin back surface 82 faces the other side (downward) in the thickness direction z. As shown in FIGS. 10 to 14, each of the multiple resin side surfaces 831 to 834 is sandwiched between the resin main surface 81 and the resin back surface 82 in the thickness direction z and is connected to the resin main surface 81 and the resin back surface 82, respectively. As shown in FIGS. 3, 4, and 10 to 12, the resin side surfaces 831 and 832 are spaced apart in the first direction x. The resin side surface 831 faces one side of the first direction x, and the resin side surface 832 faces the other side of the first direction x. As shown in Figures 3, 4, and 10, the pair of control terminals 61, 62 and the plurality of detection terminals 63 to 65 each protrude from a resin side surface 831. As shown in Figures 3, 4, 10, 13, and 14, the resin side surface 833 and the resin side surface 834 are spaced apart in the second direction y. The resin side surface 833 faces one side of the second direction y, and the resin side surface 834 faces the other side of the second direction y.

[0101] 3, 4, and 10 to 12, the resin member 8 has cutouts formed in each of the resin main surface 81 and the resin back surface 82 of the resin side surface 832. The cutouts expose the first power terminal 5P, the second power terminal 5N, and the pair of third power terminals 5O from the resin member 8, as shown in FIGS.

[0102] The functions and effects of the semiconductor device A1 are as follows.

[0103] The semiconductor device A1 includes a plurality of connecting members 741, a detection terminal 63, and a signal wiring portion 54. The plurality of connecting members 741 are individually bonded to the second electrodes 12 of the plurality of first semiconductor elements 1. The detection terminal 63 is electrically connected to the second electrodes 12 of the plurality of first semiconductor elements 1. The signal wiring portion 54 is electrically interposed between the plurality of connecting members 741 and the detection terminal 63. According to research by the present inventors, when the plurality of first semiconductor elements 1 are operated in parallel in the semiconductor device A1, the frequency of occurrence of the resonance phenomenon varies depending on the inductance of the conduction path between the second electrodes 12 (sources) of the plurality of first semiconductor elements 1, which is the path via each connecting member 741 and the signal wiring portion 54. Specifically, the greater the inductance, the more likely the resonance phenomenon occurs, and the occurrence of the resonance phenomenon can be suppressed by reducing the inductance. Therefore, in the semiconductor device A1, a pad portion 543 is provided in the signal wiring portion 54 between two first semiconductor elements 1 adjacent to each other in the first direction x in a plan view. Each of the multiple connection members 741 is bonded to the pad portion 543 and the second electrode 12 of the first semiconductor element 1 adjacent to the pad portion 543 in a plan view. This shortens the conduction path between the second electrodes 12 of the multiple first semiconductor elements 1, thereby reducing the inductance between the second electrodes 12 of the multiple first semiconductor elements 1. For example, compared to a configuration different from the semiconductor device A1 in which each connection member 741 is bonded to the strip portion 542 instead of the pad portion 543, the conduction path between the second electrodes 12 can be shortened, thereby reducing the inductance between the second electrodes 12. Therefore, the semiconductor device A1 can suppress the resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel. This also applies to a case in which multiple second semiconductor elements 2 are operated in parallel. In other words, in the semiconductor device A1, two adjacent fifth electrodes 22 in the first direction x are electrically connected to each other via the pad portion 553 of the signal wiring portion 55, making it possible to suppress the resonance phenomenon that occurs when multiple second semiconductor elements 2 are operated in parallel.

[0104] In the semiconductor device A1, some of the multiple first semiconductor elements 1 have two connecting members 741 connected thereto (for example, the first inner element 1B). This configuration makes it possible to shorten the conduction path between each of the second electrodes 12 of the multiple first semiconductor elements 1 compared to when only one connecting member 741 is connected to each first semiconductor element 1. This also applies to the circuit configuration of the lower arm. In other words, in the semiconductor device A1, some of the multiple second semiconductor elements 2 have two connecting members 742 connected thereto (for example, the second inner element 2B), making it possible to shorten the conduction path between each of the fifth electrodes 22 of the multiple second semiconductor elements 2.

[0105] In the semiconductor device A1, the second electrode 12 of each first semiconductor element 1 includes two first detection pads 122. The two first detection pads 122 are arranged on either side of the third electrode 13 in the arrangement direction (first direction x) of the multiple first semiconductor elements 1. This configuration facilitates joining the connection members 741 to each first detection pad 122 and each pad portion 543 located on either side of the first detection pad 122 in the arrangement direction of the multiple first semiconductor elements 1 in the first inner element 1B of the multiple first semiconductor elements 1. Therefore, the semiconductor device A1 is preferable in terms of shortening the conduction path between the second electrodes 12 of the multiple first semiconductor elements 1. This also applies to the circuit configuration of the lower arm. That is, in each second semiconductor element 2, the two second detection pads 222 of the fifth electrode 22 are arranged on either side of the sixth electrode 23 in the arrangement direction (first direction x) of the multiple second semiconductor elements 2. This makes it possible to shorten the conduction paths between the fifth electrodes 22 of the second semiconductor elements 2 in the semiconductor device A1.

[0106] In the semiconductor device A1, the wire diameter of each connecting member 741 is larger than the wire diameter of each connecting member 731. With this configuration, when the length of each connecting member 731 is the same as the length of each connecting member 741, each connecting member 741 has a lower parasitic inductance than each connecting member 731. Therefore, the semiconductor device A1 is preferable in terms of reducing the parasitic inductance between the second electrode 12 (first detection pad 122) of each first semiconductor element 1 and the pad portion 543. Similarly, in the semiconductor device A1, the wire diameter of each connecting member 742 is larger than the wire diameter of each connecting member 732. With this configuration, when the length of each connecting member 732 is the same as the length of each connecting member 742, each connecting member 741 has a lower parasitic inductance than each connecting member 731. Therefore, the semiconductor device A1 is preferable in terms of reducing the parasitic inductance between the fifth electrode 22 (second detection pad 222) of each second semiconductor element 2 and the pad portion 543.

[0107] The semiconductor device A1 includes multiple first circuit components 3A that increase impedance in a first frequency band, and the third electrodes 13 of the multiple first semiconductor elements 1 are electrically connected to each other via at least one of the multiple first circuit components 3A. The first frequency band includes a resonant frequency of a resonant circuit formed by including parasitic inductance of a first conductive member electrically interposed between the third electrodes 13 of the multiple first semiconductor elements 1. In the semiconductor device A1, the first conductive member is, for example, a portion of the signal wiring portion 52 and each connecting member 731. When multiple first semiconductor elements 1 are connected in parallel, a loop path is formed that passes through each first electrode 11 (drain) and each third electrode 13 (gate) of the multiple first semiconductor elements 1. In this loop path, a resonant circuit including the parasitic inductance of the first conductive member is formed, and the impedance of the loop path at the resonant frequency of this resonant circuit is low. The resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel tends to occur more easily as the impedance of the loop path is lower. Therefore, in the semiconductor device A1, multiple first circuit components 3A are connected to the first conductive member, and the third electrodes 13 of the multiple first semiconductor elements 1 are electrically connected to each other via at least one of the multiple first circuit components 3A. This increases the impedance in the first frequency band in the aforementioned loop path. Therefore, the semiconductor device A1 can suppress the resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel. This also applies to the parallel operation of multiple second semiconductor elements 2. That is, the semiconductor device A1 includes multiple second circuit components 3B that increase the impedance in the second frequency band, and the sixth electrodes 23 of the multiple second semiconductor elements 2 are electrically connected to each other via at least one of the multiple second circuit components 3B. This allows the semiconductor device A1 to suppress the resonance phenomenon that occurs when multiple second semiconductor elements 2 are operated in parallel.

[0108] In the semiconductor device A1, each first circuit component 3A is an inductance element. Unlike this configuration, even if each first circuit component 3A is a resistor rather than an inductance element, the impedance in the first frequency band can be increased. That is, the semiconductor device A1 may use a resistor as each first circuit component 3A to suppress the resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel. However, using a resistor as each first circuit component 3A increases the impedance at frequencies other than the first frequency band, raising concerns about a decrease in the switching speed of each first semiconductor element 1 and an increase in switching loss of each first semiconductor element 1. In contrast, if each first circuit component 3A is an inductance element, it is possible to suppress the increase in impedance at frequencies other than the first frequency band. As a result, the semiconductor device A1 can suppress the increase in impedance at the switching frequency of each first semiconductor element 1, thereby suppressing, for example, a decrease in the switching speed of each first semiconductor element 1 and an increase in switching loss of each first semiconductor element 1. The same applies to each second circuit component 3B. In other words, because each second circuit component 3B is an inductance element, the semiconductor device A1 can suppress an increase in impedance at frequencies outside the second frequency band more effectively than if each second circuit component 3B were a resistor. This allows the semiconductor device A1 to suppress an increase in impedance at the switching frequency of each first semiconductor element 1, thereby suppressing, for example, a decrease in the switching speed of each second semiconductor element 2 and an increase in switching loss of each second semiconductor element 2.

[0109] In the semiconductor device A1, each first circuit component 3A is a ferrite bead. Unlike this configuration, even if each first circuit component 3A is not a ferrite bead but is another inductance element, such as a coil (a wire-wound inductance element), it is possible to increase impedance in the first frequency band. That is, the semiconductor device A1 may use an inductance element other than a ferrite bead as each first circuit component 3A to suppress the resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel. However, while a typical inductance element (coil) primarily functions as a reactance component of impedance, a ferrite bead primarily functions as a resistance component in the high-frequency range. Because the reactance component does not involve energy loss, while the resistance component does, ferrite beads have a higher ability to absorb high-frequency vibrations and are more effective at eliminating high-frequency vibrations than typical inductance elements. Furthermore, by changing the type of ferrite bead used in each first circuit component 3A, the frequency characteristics and Q value of each first circuit component 3A can be easily adjusted in accordance with variations in performance of each first semiconductor element 1 and unevenness in the current (drain current) of each first semiconductor element 1. Therefore, in the semiconductor device A1, using ferrite beads as the first circuit components 3A is preferable in terms of suppressing resonance compared to using other inductance elements. The same applies to each second circuit component 3B. In other words, in the semiconductor device A1, using ferrite beads as each second circuit component 3B is preferable in terms of suppressing resonance compared to using other inductance elements.

[0110] In the semiconductor device A1, the signal wiring section 52 includes a plurality of individual parts 522 spaced apart from one another. Each of the individual parts 522 is electrically connected to a corresponding one of the third electrodes 13 of the plurality of first semiconductor elements 1 via a corresponding one of the plurality of connecting members 731. Each first circuit component 3A is joined to two of the individual parts 522 across the two individual parts 522. With this configuration, the third electrodes 13 of the plurality of first semiconductor elements 1 are electrically connected to one another via two connecting members 731, two or more individual parts 522, and one or more first circuit components 3A. Therefore, the semiconductor device A1 can electrically connect the third electrodes 13 of the plurality of first semiconductor elements 1 to one another via at least one of the plurality of first circuit components 3A. This also applies to the circuit configuration of the lower arm. In other words, the semiconductor device A1 can electrically connect the sixth electrodes 23 of the plurality of second semiconductor elements 2 to one another via at least one of the plurality of second circuit components 3B.

[0111] In the semiconductor device A1, the first power terminal 5P is disposed on one side of the arrangement direction (first direction x) of the multiple first semiconductor elements 1. The resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel can be suppressed by equalizing the conduction paths from the first power terminal 5P to the first electrodes 11 (drains) of each first semiconductor element 1. However, in the semiconductor device A1, the positional relationship between the multiple first semiconductor elements 1 and the first power terminal 5P makes it difficult to equalize the conduction paths. Therefore, when it is difficult to equalize the conduction paths from the first power terminal 5P to each third electrode 13, increasing the impedance between each third electrode 13 (gate) using the first circuit component 3A as described above is effective in suppressing the resonance phenomenon. The same applies to the circuit configuration of the lower arm. In other words, when it is difficult to equalize the conduction path from the third power terminal portion 5O to the fourth electrode 21 (drain) of each second semiconductor element 2, increasing the impedance between each sixth electrode 23 (gate) by using the second circuit component 3B as described above is effective in suppressing the resonance phenomenon.

[0112] Next, another embodiment of the semiconductor device of the present disclosure will be described.

[0113] FIG. 18 shows a semiconductor device A2 according to the second embodiment.

[0114] 18 , in the semiconductor device A2, each of the pad portions 543 is physically separated from the strip portion 542. Similarly, in the semiconductor device A2, each of the pad portions 553 is physically separated from the strip portion 552. Furthermore, in the semiconductor device A2, the multiple connection members 7 further include multiple connection members 751 and 752.

[0115] 18 , the plurality of connection members 751 are respectively bonded to the pad portions 543 and the strip portions 542. The pad portions 543 and the strip portions 542 are electrically connected to each other via the connection members 751. As a result, the first detection signal is transmitted from the second electrode 12 (first detection pad 122) of each first semiconductor element 1 to the detection terminal 63 via the connection members 741, pad portions 543, connection members 751, strip portions 542, extension portions 544, and joint portions 541. In other words, even if the pad portions 543 and the strip portions 542 are physically separated, the detection terminal 63 is electrically connected to the second electrode 12 (first detection pad 122) of each first semiconductor element 1.

[0116] 18 , the plurality of connection members 752 are respectively bonded to the pad portions 553 and the strip portions 552. The pad portions 553 and the strip portions 552 are electrically connected to each other via the connection members 752. As a result, the second detection signal is transmitted from the fifth electrode 22 (second detection pad 222) of each second semiconductor element 2 to the detection terminal 64 via the connection member 742, the pad portion 553, the connection member 752, the strip portions 552, the extension portion 554, and the joint portion 551. In other words, even if the pad portions 553 and the strip portions 552 are physically separated, the detection terminal 64 is electrically connected to the fifth electrode 22 (second detection pad 222) of each second semiconductor element 2.

[0117] In the semiconductor device A2, similar to the semiconductor device A1, it is possible to suppress the resonance phenomenon that occurs when a plurality of first semiconductor elements 1 are operated in parallel. In addition, in the semiconductor device A2, similar to the semiconductor device A1, it is possible to suppress the resonance phenomenon that occurs when a plurality of second semiconductor elements 2 are operated in parallel.

[0118] 19 to 21 show a semiconductor device A3 according to the third embodiment.

[0119] The semiconductor device A3 differs from the semiconductor device A2 mainly in the following respects: As shown in Figures 19 to 21, the multiple connection members 7 of the semiconductor device A3 do not include the connection member 751 and do not include the connection member 752. Furthermore, the semiconductor device A3 further includes multiple detection terminals 66 and multiple detection terminals 67.

[0120] In the semiconductor device A3, the first detection signal is output from each of the plurality of detection terminals 66, rather than from the detection terminal 63. Each of the plurality of detection terminals 66 includes a holder 661 and a metal pin 662. The holder 661 is made of a conductive material. The holder 661 is, for example, cylindrical. The holder 661 is joined to each pad portion 543. The metal pin 662 is press-fit into the holder 661. The metal pin 662 extends in the thickness direction z. The metal pin 662 is, for example, a square bar, but may also be a round bar. The metal pin 662 is electrically connected to each pad portion 543 via the holder 661. The metal pin 662 protrudes upward in the thickness direction z from the resin main surface 81 of the resin member 8, and a portion of the metal pin 662 is exposed from the resin member 8. In the semiconductor device A3, each detection terminal 66 is an example of a "first detection terminal."

[0121] Similarly, in semiconductor device A3, the second detection signal is output from each of the plurality of detection terminals 67, rather than from detection terminal 64. Each of the plurality of detection terminals 67 includes a holder 671 and a metal pin 672. Holder 671 has the same shape as holder 661, and is joined to each pad portion 553. Metal pin 672 has the same shape as metal pin 662, and is press-fit into holder 671. In semiconductor device A3, each detection terminal 67 is an example of a "second detection terminal."

[0122] In the illustrated example, the semiconductor device A3 has signal wiring portions 53 and 54 formed on an insulating substrate 50, similar to the semiconductor devices A1 and A2, but these signal wiring portions 53 and 54 may not be formed. Also, the semiconductor device A3 has detection terminals 63 and 64, similar to the semiconductor devices A1 and A2, but these detection terminals 63 and 64 may not be provided.

[0123] In the semiconductor device A3, each detection terminal 66 is connected to the control device that generates each first drive signal, and each first detection signal output from each detection terminal 66 is output to the control device. The control device performs control using each input first detection signal (for example, generating a first drive signal). At this time, the control device may use each input first detection signal as is, or may combine each input first detection signal into a single signal. Similarly, in the semiconductor device A3, each detection terminal 67 is connected to the control device that generates each second drive signal, and each second detection signal output from each detection terminal 67 is output to the control device. The control device performs control using each input second detection signal (for example, generating a second drive signal). At this time, the control device may use each input second detection signal as is, or may combine each input second detection signal into a single signal.

[0124] Like the semiconductor device A1, the semiconductor device A3 can also suppress the resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel. Also, like the semiconductor device A1, the semiconductor device A3 can also suppress the resonance phenomenon that occurs when multiple second semiconductor elements 2 are operated in parallel.

[0125] FIG. 22 shows a semiconductor device A4 according to the fourth embodiment.

[0126] The semiconductor device A4 differs from the semiconductor device A2 mainly in the following points. As shown in Fig. 22, in the semiconductor device A4, the multiple connection members 7 include multiple connection members 761 instead of the multiple connection members 751. Also, in the semiconductor device A4, the multiple connection members 7 include multiple connection members 762 instead of the multiple connection members 752. Furthermore, in the semiconductor device A4, the wire diameter of each of the multiple connection members 741, 742 is the same (or approximately the same) as the wire diameter of each of the connection members 731, 732.

[0127] 22 , each connection member 761 is bonded to one of the two first detection pads 122 of the second electrode 12 of each first semiconductor element 1 and to the strip-shaped portion 542. This establishes electrical continuity between the second electrode 12 (source) of each first semiconductor element 1 and the strip-shaped portion 542 via each connection member 761. In the semiconductor device A4, the first detection signal is transmitted from the first detection pad 122 to which each connection member 761 is bonded to the detection terminal 63 via the connection member 761 and the signal wiring portion 54. Each connection member 761 is, for example, a bonding wire, and its wire diameter is the same (or approximately the same) as that of each connection member 741.

[0128] 22 , each connection member 762 is bonded to one of the two second detection pads 222 of the fifth electrode 22 of each second semiconductor element 2 and to the strip-shaped portion 552. This establishes electrical continuity between the fifth electrode 22 (source) of each second semiconductor element 2 and the strip-shaped portion 552 via each connection member 762. In the semiconductor device A4, the second detection signal is transmitted from the second detection pad 222 to which each connection member 762 is bonded to the detection terminal 64 via the connection member 762 and the signal wiring portion 55. Each connection member 762 is, for example, a bonding wire, and its wire diameter is the same (or approximately the same) as that of each connection member 742.

[0129] As described above, the wire diameter of each of the connecting members 741, 742 is the same (or approximately the same) as the wire diameter of each of the connecting members 731, 732. That is, the wire diameter of each of the connecting members 741, 742 in the semiconductor device A4 is smaller than the wire diameter of each of the connecting members 741, 742 in each of the semiconductor devices A1 to A3. In each of the semiconductor devices A1 to A3, due to the relationship between the wire diameter of each connecting member 741 and the planar area of ​​the first detection pad 122, once each connecting member 741 is joined to each first detection pad 122, it is difficult to join a connecting member 7 other than the connecting member 741. On the other hand, in the semiconductor device A4, each connecting member 741 is thinner than the connecting members 741 in each of the semiconductor devices A1 to A3, so it is possible to join both the connecting member 741 and the connecting member 761 to one first detection pad 122. Similarly, in the semiconductor device A4, since each of the connection members 742 is thinner than each of the connection members 742 of the semiconductor devices A1 to A3, it is possible to join both the connection member 742 and the connection member 762 to one second detection pad 222.

[0130] Like the semiconductor device A1, the semiconductor device A4 can also suppress the resonance phenomenon that occurs when multiple first semiconductor elements 1 are operated in parallel. Also, like the semiconductor device A1, the semiconductor device A4 can also suppress the resonance phenomenon that occurs when multiple second semiconductor elements 2 are operated in parallel.

[0131] In the semiconductor device according to the present disclosure, the arrangement and number of the multiple circuit components 3 are not limited to the illustrated example. For example, an additional first circuit component 3A may be provided in a portion of the signal wiring portion 52 electrically connecting the detection terminal 63 and the third electrode 13, which has the shortest electrical connection to the detection terminal 63. In this case, the portion of the signal wiring portion 52 is partially divided, and the divided portions are electrically connected to each other via the additional first circuit component 3A. Similarly, an additional second circuit component 3B may be provided in a portion of the signal wiring portion 53 electrically connecting the detection terminal 64 and the sixth electrode 23, which has the shortest electrical connection to the detection terminal 64. In this case, the portion of the signal wiring portion 53 is partially divided, and the divided portions are electrically connected to each other via the additional second circuit component 3B. As another example, the multiple individual portions 522 are separated from the extending portion 523, and a strip-shaped portion 525 extending from the extending portion 523 in the first direction x is provided. The strip-shaped portion 525 is spaced apart from each individual portion 522. The third electrode 13 of each first semiconductor element 1 may be electrically connected to each individual portion 522 via the connecting member 731, and then electrically connected from each individual portion 522 to the strip-shaped portion 525 via an additional connecting member. Similarly, the individual portions 532 are separated from the extending portion 533, and strip-shaped portions 535 are provided extending from the extending portion 533 in the first direction x. The strip-shaped portions 535 are spaced apart from each individual portion 532. The sixth electrode 23 of each second semiconductor element 2 may be electrically connected to each individual portion 532 via the connecting member 732, and then electrically connected from each individual portion 532 to the strip-shaped portion 535 via an additional connecting member.

[0132] The semiconductor device according to the present disclosure is not limited to a configuration including a plurality of circuit components 3, and may not include even one of a plurality of circuit components 3. In this case, in the signal wiring section 52, a plurality of individual sections 522 are connected to each other and formed as a single strip-shaped section. Similarly, in the signal wiring section 53, a plurality of individual sections 532 are connected to each other and formed as a single strip-shaped section.

[0133] The package structure of the semiconductor device according to the present disclosure is not limited to the resin mold type shown in each of the semiconductor devices A1 to A4. The resin mold type refers to a package structure in which a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2 are covered with a resin member 8, as shown in the semiconductor devices A1 to A4. For example, the semiconductor device according to the present disclosure may be a case type. The case type refers to a package structure in which a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2 are housed in a resin case, for example.

[0134] The semiconductor device according to the present disclosure is not limited to one that operates in parallel a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2. For example, the semiconductor device according to the present disclosure may not include a plurality of second semiconductor elements 2, but may operate a plurality of first semiconductor elements 1 in parallel.

[0135] The semiconductor device according to the present disclosure is not limited to one in which the first power terminal portion 5P, the second power terminal portion 5N, and the third power terminal portion 5O are each arranged in any one of the arrangement directions (first direction x) of the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2. The semiconductor device according to the present disclosure may also be one in which the first power terminal portion 5P, the second power terminal portion 5N, and the third power terminal portion 5O are each arranged in any one of the directions (second direction y) intersecting the arrangement directions (first direction x) of the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2.

[0136] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. For example, the present disclosure includes the embodiments described in the following appendices. Appendix 1. a plurality of first semiconductor elements each having a first electrode, a second electrode, and a third electrode, and whose switching operation is controlled in response to a first drive signal input to the third electrode; a plurality of first connection members individually joined to the second electrodes of the plurality of first semiconductor elements; a first detection terminal electrically connected to the second electrodes of the plurality of first semiconductor elements; a first signal wiring portion electrically interposed between the plurality of first connection members and the first detection terminal; It is equipped with the plurality of first semiconductor elements are arranged in a first direction perpendicular to a thickness direction of each of the plurality of first semiconductor elements and are electrically connected in parallel; the first signal wiring portion includes first pad portions respectively positioned between two first semiconductor elements adjacent to each other in the first direction when viewed in the thickness direction, A semiconductor device, wherein each of the plurality of first connection members is joined to the first pad portion and a first semiconductor element, among the plurality of first semiconductor elements, that is adjacent to the first pad portion when viewed in the thickness direction. Appendix 2. each of the plurality of first semiconductor elements has a first element main surface and a first element back surface spaced apart in the thickness direction; 2. The semiconductor device according to claim 1, wherein the second electrode is disposed on a main surface of the first element. Appendix 3. the plurality of first semiconductor elements include a pair of first outer elements located at both ends in the first direction and a first inner element sandwiched between the pair of first outer elements in the first direction, The semiconductor device described in Appendix 2, wherein the first inner element is sandwiched between two of the first pad portions when viewed in the thickness direction, and two of the multiple first connection members are joined to each other. Appendix 4. the second electrode includes a first power pad and two first sense pads spaced apart on the first element main surface; the first power pads are electrically connected to one another in the plurality of first semiconductor elements; the two first detection pads of the first inner element are respectively joined to the two first connection members joined to the first inner element; 4. The semiconductor device according to claim 3, wherein one of the two first detection pads of each of the pair of first outer elements is joined to one of the plurality of first connection members. Appendix 5. the third electrode is disposed on the first element main surface, 5. The semiconductor device according to claim 4, wherein the two first detection pads are arranged in the first direction with the third electrode sandwiched therebetween. Appendix 6. the first signal wiring portion includes a first strip portion extending in the first direction when viewed in the thickness direction, the first strip portion is located further in one of the thickness direction and a second direction perpendicular to the first direction than the plurality of first semiconductor elements; 6. The semiconductor device according to claim 2, wherein the first pad portion overlaps the first strip portion when viewed in the second direction. Appendix 7. 7. The semiconductor device according to claim 6, wherein the first pad portion is formed integrally with the first strip portion. Appendix 8. the first detection terminal is located further in the first direction than the plurality of first semiconductor elements; the first signal wiring portion further includes a first joint portion to which the first detection terminal is joined, 8. The semiconductor device according to claim 6, wherein the first strip portion is electrically connected to the first joint portion. Appendix 9. a plurality of second semiconductor elements each having a fourth electrode, a fifth electrode, and a sixth electrode, and whose switching operation is controlled in response to a second drive signal input to the sixth electrode; a plurality of second connection members individually joined to the fifth electrodes of the plurality of second semiconductor elements; a second detection terminal electrically connected to the fifth electrodes of the plurality of second semiconductor elements; a second signal wiring portion electrically interposed between the plurality of second connection members and the second detection terminal; It is equipped with the plurality of second semiconductor elements are arranged in the first direction and electrically connected in parallel, the second signal wiring portion includes second pad portions respectively positioned between two second semiconductor elements adjacent to each other in the first direction when viewed in the thickness direction, The semiconductor device described in Appendix 8, wherein each of the plurality of second connection members is joined to the second pad portion and a second semiconductor element among the plurality of second semiconductor elements that is adjacent to the second pad portion when viewed in the thickness direction. Appendix 10. each of the plurality of second semiconductor elements has a second element main surface and a second element back surface spaced apart in the thickness direction; the second element principal surface faces the same direction as the first element principal surface, 10. The semiconductor device according to claim 9, wherein the fifth electrode is disposed on the second element main surface. Appendix 11. the plurality of second semiconductor elements include a pair of second outer elements located at both ends in the first direction and a second inner element sandwiched between the pair of second outer elements in the first direction, The semiconductor device described in Appendix 10, wherein the second inner element is sandwiched between two of the second pad portions when viewed in the thickness direction, and two of the multiple second connection members are joined to the second inner element. Appendix 12. the fifth electrode includes a second power pad and two second sense pads spaced apart on the second element principal surface; the second power pads are electrically connected to one another in the plurality of second semiconductor elements; the two second detection pads of the second inner element are respectively joined to the two second connection members joined to the second inner element; 12. The semiconductor device according to claim 11, wherein one of the two second detection pads of each of the pair of second outer elements is joined to one of the plurality of second connection members. Appendix 13. the second signal wiring portion includes a second strip portion extending in the first direction when viewed in the thickness direction, the second strip portion is located on the opposite side of the second semiconductor elements from the side on which the first semiconductor elements are located in the second direction, 13. The semiconductor device according to claim 10, wherein the second pad portion overlaps the second strip portion when viewed in the second direction. Appendix 14. 14. The semiconductor device according to claim 13, wherein the second pad portion is formed integrally with the second strip portion. Appendix 15. the second detection terminal is located further in the first direction than the plurality of second semiconductor elements; the second signal wiring portion includes a second joint portion to which the second detection terminal is joined, 15. The semiconductor device according to claim 13, wherein the second strip portion is electrically connected to the second joint portion. Appendix 16. an insulating substrate having a substrate main surface and a substrate back surface spaced apart from each other in the thickness direction; the substrate main surface faces the same direction as the first element main surface and the second element main surface; the rear surface of the substrate faces the same direction as the rear surfaces of the first element and the second element, 16. The semiconductor device according to claim 15, wherein the first signal wiring portion and the second signal wiring portion are formed on the main surface of the substrate. Appendix 17. the first electrode is formed on a rear surface of the first element, 17. The semiconductor device according to claim 16, wherein the fourth electrode is formed on a rear surface of the second element. Appendix 18. a first mounting portion on which the plurality of first semiconductor elements are mounted; a second mounting portion on which the plurality of second semiconductor elements are mounted, the first mounting portion and the second mounting portion are each made of a conductive material and are spaced apart from each other; the first electrodes of the plurality of first semiconductor elements are electrically connected to one another via the first mounting portion; 18. The semiconductor device according to claim 17, wherein the fourth electrodes of the second semiconductor elements are electrically connected to each other via the second mounting portion. Appendix 19. the first mounting portion and the second mounting portion face the rear surface of the substrate, the insulating substrate includes a plurality of first openings and a plurality of second openings each penetrating from the substrate main surface to the substrate back surface in the thickness direction, each of the plurality of first openings surrounds each of the plurality of first semiconductor elements when viewed in the thickness direction; 19. The semiconductor device according to claim 18, wherein each of the second openings surrounds each of the second semiconductor elements when viewed in the thickness direction. Appendix 20. a first power terminal portion electrically connected to the first electrode of each of the plurality of first semiconductor elements; a second power terminal portion electrically connected to the fifth electrode of each of the plurality of second semiconductor elements; a third power terminal portion electrically connected to the second electrode of each of the plurality of first semiconductor elements and the fourth electrode of each of the plurality of second semiconductor elements, a DC voltage is input between the first power terminal portion and the second power terminal portion; the DC voltage is converted into an AC voltage by the switching operations of the first semiconductor elements and the second semiconductor elements; 20. The semiconductor device according to claim 16, wherein the AC voltage is output from the third power terminal portion. [Explanation of symbols]

[0137] A1 to A4: Semiconductor device 1: First semiconductor element 1A: First outer element 1B: First inner element 10a: element main surface 10b: element back surface 11: first electrode 12: Second electrode 121: First power pad 122: First detection pad 13: Third electrode 19: Conductive bonding material 2: Second semiconductor element 2A: Second outer element 2B: Second inner element 20a: element main surface 20b: element back surface 21: fourth electrode 22: Fifth electrode 221: Second power pad 222: Second detection pad 23: Sixth electrode 29: Conductive adhesive 3: Circuit components 3A: First circuit component 3B: Second circuit component 4: Support member 41, 42: Conductive plates 41a, 42a: Mounting surfaces 419, 429: Bonding material 43, 44: Insulating plate 50: insulating substrate 501: main surface 502: back surface 503,504: Through hole 505,506: Opening 511,512,513,514: Power wiring section 511a, 514a: Opening 511b, 513a, 514b: Through hole 5P: 1st power terminal section 5N: 2nd power terminal section 5O: Third power terminal section 52: Signal wiring section 521: Joint part 522: Individual part 523: Extension part 53: Signal wiring section 531: Joint section 532: Individual section 533: Extension part 54: Signal wiring part 541: Joint part 542: Belt-shaped portion 543: Pad portion 544: Extension portion 55: Signal wiring section 551: Joint section 552: Belt section 553: Pad portion 554: Extension portion 56: Signal wiring portion 561: Through hole 58, 59: Metal member 61, 62: Control terminal 63-67: Detection terminal 661, 671: Holder 662, 672: Metal pin 7: Connection member 71, 72: Connection member 731, 732: Connection parts 741, 742: Connection parts 751, 752: Connection parts 761, 762: Connection parts 8: Resin member 81: Resin main surface 82: Resin back surface 831~834: Resin side

Claims

1. a plurality of first semiconductor elements each having a first electrode, a second electrode, and a third electrode, and whose switching operation is controlled in response to a first drive signal input to the third electrode; a plurality of first connection members individually joined to the second electrodes of the plurality of first semiconductor elements; a first detection terminal electrically connected to the second electrodes of the plurality of first semiconductor elements; a first signal wiring portion electrically interposed between the plurality of first connection members and the first detection terminal; It is equipped with the plurality of first semiconductor elements are arranged in a first direction perpendicular to a thickness direction of each of the plurality of first semiconductor elements and are electrically connected in parallel; the first signal wiring portion includes first pad portions respectively positioned between two first semiconductor elements adjacent to each other in the first direction when viewed in the thickness direction, each of the plurality of first connection members is bonded to the first pad portion and a first semiconductor element, among the plurality of first semiconductor elements, that is adjacent to the first pad portion when viewed in the thickness direction; Semiconductor device.

2. each of the plurality of first semiconductor elements has a first element main surface and a first element back surface spaced apart in the thickness direction; the second electrode is disposed on the first element main surface; The semiconductor device according to claim 1 .

3. the plurality of first semiconductor elements include a pair of first outer elements located at both ends in the first direction and a first inner element sandwiched between the pair of first outer elements in the first direction, the first inner element is sandwiched between two of the first pad portions when viewed in the thickness direction, and two of the plurality of first connection members are joined to the first inner element; The semiconductor device according to claim 2 .

4. the second electrode includes a first power pad and two first sense pads spaced apart on the first element main surface; the first power pads are electrically connected to one another in the plurality of first semiconductor elements; the two first detection pads of the first inner element are respectively joined to the two first connection members joined to the first inner element; any one of the two first detection pads of each of the pair of first outer elements is joined to any one of the plurality of first connection members; The semiconductor device according to claim 3 .

5. the third electrode is disposed on the first element main surface, the two first detection pads are arranged in the first direction with the third electrode interposed therebetween; The semiconductor device according to claim 4 .

6. the first signal wiring portion includes a first strip portion extending in the first direction when viewed in the thickness direction, the first strip portion is located further in one of the thickness direction and a second direction perpendicular to the first direction than the plurality of first semiconductor elements; When viewed in the second direction, the first pad portion overlaps the first band-shaped portion. The semiconductor device according to claim 2 .

7. The first pad portion is formed integrally with the first band-shaped portion. The semiconductor device according to claim 6.

8. the first detection terminal is located further in the first direction than the plurality of first semiconductor elements; the first signal wiring portion further includes a first joint portion to which the first detection terminal is joined, the first strip portion is electrically connected to the first joint portion; The semiconductor device according to claim 6.

9. a plurality of second semiconductor elements each having a fourth electrode, a fifth electrode, and a sixth electrode, and whose switching operation is controlled in response to a second drive signal input to the sixth electrode; a plurality of second connection members individually joined to the fifth electrodes of the plurality of second semiconductor elements; a second detection terminal electrically connected to the fifth electrodes of the plurality of second semiconductor elements; a second signal wiring portion electrically interposed between the plurality of second connection members and the second detection terminal; It is equipped with the plurality of second semiconductor elements are arranged in the first direction and electrically connected in parallel, the second signal wiring portion includes second pad portions respectively positioned between two second semiconductor elements adjacent to each other in the first direction when viewed in the thickness direction, each of the plurality of second connection members is bonded to the second pad portion and a second semiconductor element, among the plurality of second semiconductor elements, that is adjacent to the second pad portion as viewed in the thickness direction; The semiconductor device according to claim 8 .

10. each of the plurality of second semiconductor elements has a second element main surface and a second element back surface spaced apart in the thickness direction; the second element principal surface faces the same direction as the first element principal surface, the fifth electrode is disposed on the second element principal surface; The semiconductor device according to claim 9 .

11. the plurality of second semiconductor elements include a pair of second outer elements located at both ends in the first direction and a second inner element sandwiched between the pair of second outer elements in the first direction, the second inner element is sandwiched between two of the second pad portions when viewed in the thickness direction, and two of the plurality of second connection members are joined to the second inner element; The semiconductor device according to claim 10.

12. the fifth electrode includes a second power pad and two second sense pads spaced apart on the second element main surface; the second power pads are electrically connected to one another in the plurality of second semiconductor elements; the two second detection pads of the second inner element are respectively joined to the two second connection members joined to the second inner element; any one of the two second detection pads of each of the pair of second outer elements is joined to any one of the plurality of second connection members; The semiconductor device according to claim 11.

13. the second signal wiring portion includes a second strip portion extending in the first direction when viewed in the thickness direction, the second strip portion is located on the opposite side of the second semiconductor elements from the side on which the first semiconductor elements are located in the second direction, When viewed in the second direction, the second pad portion overlaps the second band-shaped portion. The semiconductor device according to claim 10.

14. The second pad portion is formed integrally with the second band portion. The semiconductor device according to claim 13.

15. the second detection terminal is located further in the first direction than the plurality of second semiconductor elements, the second signal wiring portion includes a second joint portion to which the second detection terminal is joined, the second strip portion is electrically connected to the second joint portion; The semiconductor device according to claim 13.

16. an insulating substrate having a substrate main surface and a substrate back surface spaced apart from each other in the thickness direction; the substrate main surface faces the same direction as the first element main surface and the second element main surface; the substrate rear surface faces the same direction as the first element rear surface and the second element rear surface, the first signal wiring portion and the second signal wiring portion are formed on the main surface of the substrate; The semiconductor device according to claim 15.

17. the first electrode is formed on a rear surface of the first element, the fourth electrode is formed on a rear surface of the second element; The semiconductor device according to claim 16.

18. a first mounting portion on which the plurality of first semiconductor elements are mounted; a second mounting portion on which the plurality of second semiconductor elements are mounted, the first mounting portion and the second mounting portion are each made of a conductive material and are spaced apart from each other; the first electrodes of the plurality of first semiconductor elements are electrically connected to one another via the first mounting portion; the fourth electrodes of the second semiconductor elements are electrically connected to each other via the second mounting portion; 18. The semiconductor device according to claim 17.

19. the first mounting portion and the second mounting portion face a rear surface of the substrate, the insulating substrate includes a plurality of first openings and a plurality of second openings each penetrating from the substrate main surface to the substrate back surface in the thickness direction; each of the plurality of first openings surrounds each of the plurality of first semiconductor elements when viewed in the thickness direction; Each of the plurality of second openings surrounds each of the plurality of second semiconductor elements when viewed in the thickness direction.

19. The semiconductor device according to claim 18.

20. a first power terminal portion electrically connected to the first electrode of each of the plurality of first semiconductor elements; a second power terminal portion electrically connected to the fifth electrode of each of the plurality of second semiconductor elements; a third power terminal portion electrically connected to the second electrode of each of the plurality of first semiconductor elements and the fourth electrode of each of the plurality of second semiconductor elements, a DC voltage is input between the first power terminal portion and the second power terminal portion; the DC voltage is converted into an AC voltage by the switching operations of the first semiconductor elements and the second semiconductor elements; The AC voltage is output from the third power terminal portion.

20. The semiconductor device according to claim 16, wherein the first insulating film is a semiconductor material.

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