Substrate cleaning method and substrate cleaning apparatus
The substrate cleaning method using a chemical liquid followed by bubble-containing liquid effectively addresses the issue of residual liquid films, achieving enhanced cleaning power by detaching and removing chemical residues from the substrate underside.
Patent Information
- Application Number
- JP2022007863
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-01-21
- Publication Date
- 2026-02-12
- Estimated Expiration
- 2042-01-21
AI Technical Summary
Existing substrate cleaning methods lack sufficient cleaning power, particularly in removing residual chemical liquid films from the underside of substrates.
A method involving the supply of a chemical liquid to the underside of a substrate followed by a bubble-containing liquid, preferably pure water with bubbles, to replace and detach the chemical liquid film, utilizing nozzles and controlled flow rates and gas species to enhance cleaning efficiency.
The method significantly improves cleaning power by efficiently removing chemical liquid films from the substrate underside, enhancing the cleaning process.
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Abstract
Description
[Technical Field]
[0001] The present invention relates to a substrate cleaning method and a substrate cleaning apparatus. [Background technology]
[0002] Patent Document 1 discloses a substrate cleaning method in which an etching solution is supplied to the top and bottom surfaces of a held substrate to perform chemical cleaning, and then pure water is supplied to remove the etching solution. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-176386 Summary of the Invention [Problem to be solved by the invention]
[0004] An object of the present invention is to provide a substrate cleaning method and a substrate cleaning apparatus that have a stronger cleaning power. [Means for solving the problem]
[0005] According to one aspect of the present invention, there is provided a substrate cleaning method comprising a first step of supplying a chemical liquid to an underside of a substrate, and then a second step of supplying a bubble-containing liquid to the underside of the substrate.
[0006] It is desirable that the first step forms a liquid film of the chemical solution on the lower surface of the substrate, and the second step replaces the liquid film with the bubble-containing liquid.
[0007] It is preferable to include a step of producing the aerated liquid before the second step.
[0008] In the step of generating the gas bubble-containing liquid, it is preferable that the gas bubble-containing liquid is generated by generating gas bubbles in the cleaning liquid using ultrasonic waves.
[0009] It is desirable that the flow rate of the gas bubble-containing liquid supplied in the second step be faster than the flow rate of the chemical liquid supplied in the first step.
[0010] It is desirable that in the first step, the chemical liquid is supplied from a first nozzle, and in the second step, the gas bubble-containing liquid is supplied from a second nozzle different from the first nozzle.
[0011] In the second step, the gas bubble-containing liquid is preferably supplied from a single-tube nozzle.
[0012] In the second step, it is desirable to supply the bubble-containing liquid to the vicinity of the center of the lower surface of the substrate and to the peripheral edge of the substrate.
[0013] In the second step, it is desirable to supply the bubble-containing liquid and ultrasonic cleaning liquid to the lower surface of the substrate.
[0014] In the second step, the bubble-containing liquid and two fluids are preferably supplied to the lower surface of the substrate.
[0015] The bubble-containing liquid is preferably pure water containing bubbles.
[0016] The diameter of the bubbles contained in the bubble-containing liquid is preferably 1 μm or more and 500 μm or less.
[0017] The bubbles contained in the gas-containing liquid are preferably bubbles of one or more of nitrogen, hydrogen, ozone, carbon dioxide and oxygen.
[0018] It is preferable that a metal film is formed on the upper surface of the substrate, and the bubbles contained in the bubble-containing liquid include nitrogen and / or hydrogen bubbles.
[0019] It is desirable to include a step of scrubbing the underside of the substrate before the first step. In the first step, it is desirable to supply a chemical solution containing bubbles.
[0020] According to another aspect of the present invention, there is provided a substrate cleaning apparatus including: a substrate holding unit that holds a substrate; a first nozzle that supplies a chemical liquid to an underside of the held substrate; a second nozzle that supplies a bubble-containing liquid to the underside of the held substrate; and a control unit that controls the second nozzle to supply the bubble-containing liquid after the first nozzle has supplied the chemical liquid.
[0021] The second nozzle preferably includes a gas supply unit, a liquid supply unit, a gas-containing liquid generating unit that mixes the gas from the gas supply unit with the liquid from the liquid supply unit to generate the gas-containing liquid, and a single-tube nozzle that sprays the generated gas-containing liquid onto the underside of the substrate.
[0022] The second nozzle preferably includes a gas supply unit, a liquid supply unit, an aerated liquid generating unit that mixes the gas from the gas supply unit with the liquid from the liquid supply unit to generate the aerated liquid, and a housing having an injection hole through which the generated aerated liquid is injected.
[0023] The upper surface of the housing preferably has an inclined surface extending obliquely downward from the injection hole. [Effects of the Invention]
[0024] Improved cleaning power. [Brief explanation of the drawings]
[0025] [Figure 1A] 1A to 1C are diagrams illustrating an example of a conventional substrate cleaning method. [Figure 1B] 1A to 1C are diagrams illustrating an example of a conventional substrate cleaning method. [Figure 2A] 1A to 1C are diagrams for explaining an outline of a substrate cleaning method according to an embodiment of the present invention. [Figure 2B] 1A to 1C are diagrams for explaining an outline of a substrate cleaning method according to an embodiment of the present invention. [Figure 2C]1A to 1C are diagrams for explaining an outline of a substrate cleaning method according to an embodiment of the present invention. [Figure 3] 1 is a schematic perspective view of a substrate cleaning apparatus according to an embodiment; [Figure 4] FIG. 3 is a schematic diagram showing an example of a pure water supply nozzle 5. [Figure 5A] FIG. 4 is a schematic diagram showing another example of the pure water supply nozzle 5. [Figure 5B] FIG. 4 is a schematic diagram showing another example of the pure water supply nozzle 5. [Figure 6A] FIG. 10 is a schematic perspective view of a substrate cleaning apparatus according to another embodiment. [Figure 6B] FIG. 10 is a schematic perspective view of a substrate cleaning apparatus according to still another embodiment. [Figure 7] 1 is a process diagram showing a substrate cleaning procedure. DETAILED DESCRIPTION OF THE INVENTION
[0026] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention relates mainly to cleaning the underside of a substrate. First, an outline of the present invention will be described.
[0027] 1A and 1B are diagrams illustrating an example of a conventional substrate cleaning method. First, the upper surface of the substrate W is scrubbed with a roll sponge 21, and the lower surface is scrubbed with a roll sponge 22 (FIG. 1A). The upper surface of the substrate W refers to the surface facing vertically upward when held (usually the surface on which devices are formed). The lower surface of the substrate W refers to the surface facing vertically downward when held (usually the surface on which devices are not formed).
[0028] When the scrubbing is completed, the roll sponges 21, 22 are moved away from the substrate W. Then, a chemical solution is supplied from the chemical solution supply nozzle 4 to the underside of the substrate W to perform a chemical rinse (FIG. 1B). As shown in the figure, a liquid film 100 of the chemical solution is formed on the underside of the substrate W by the supply of the chemical solution. This liquid film 100 contains foreign matter and the like that has been removed from the underside of the substrate W.
[0029] Next, pure water is supplied to the lower surface of the substrate W from a pure water supply nozzle (not shown), and the liquid film 100 is removed by rinsing with pure water.
[0030] 2A to 2C are diagrams illustrating an outline of a substrate cleaning method according to one embodiment of the present invention. First, the upper and lower surfaces of the substrate W are scrubbed, and then a chemical solution is supplied to the lower surface of the substrate W to perform a chemical rinse, as in the conventional method, and a liquid film 100 of the chemical solution is formed on the lower surface of the substrate W (FIG. 2A).
[0031] Next, pure water containing bubbles (hereinafter referred to as "bubble-containing pure water") is supplied from the pure water supply nozzle 5 to the underside of the substrate W. The bubbles in the bubble-containing pure water 101 that have reached the bottom of the chemical liquid film 100 rise in the bubble-containing pure water 101 due to their buoyancy and penetrate into the boundary between the underside of the substrate W and the liquid film 100 (FIG. 2B). As a result, the liquid film 100 detaches from the underside of the substrate W and falls, and the liquid film 100 is efficiently removed (FIG. 2C).
[0032] By supplying the bubble-containing pure water in this manner, the liquid film 100 of the chemical liquid is replaced with bubbles, which can prevent the liquid film 100 from remaining on the lower surface of the substrate W, thereby improving the cleaning power.
[0033] This will be explained in detail below. 3 is a schematic perspective view of a substrate cleaning apparatus according to one embodiment. The substrate cleaning apparatus includes four rollers 11-14 (substrate holders) arranged on a substantially horizontal plane, two cylindrical roll sponges 21 and 22 that serve as cleaning units, rotation mechanisms 31 and 32 that rotate the roll sponges 21 and 22, a chemical solution supply nozzle 4, a pure water supply nozzle 5, and a control unit 6.
[0034] Roller 11 has a two-stage structure consisting of a holding portion 11a and a shoulder portion (support portion) 11b. The diameter of shoulder portion 11b is larger than the diameter of holding portion 11a, and holding portion 11a is provided on shoulder portion 11b. Rollers 12 to 14 have a similar structure to roller 11. Rollers 11 to 14 can be moved toward and away from each other by a drive mechanism (e.g., an air cylinder) not shown. When rollers 11 to 14 approach each other, holding portions 11a to 14a can hold substrate W approximately horizontally. Furthermore, at least one of rollers 11 to 14 is configured to be rotationally driven by a rotation mechanism not shown, thereby rotating substrate W in a horizontal plane.
[0035] The roll sponge 21 extends in a horizontal plane and comes into contact with the upper surface of the substrate W held by the rollers 11 to 14 to scrub it. The roll sponge 21 is rotated by a rotation mechanism 31 around an axis in the longitudinal direction of the roll sponge 21. The rotation mechanism 31 is attached to a guide rail 33 that guides its vertical movement, and is supported by an elevation drive mechanism 34. The elevation drive mechanism 34 moves the rotation mechanism 31 and the roll sponge 21 in the vertical direction along the guide rail 33.
[0036] The roll sponge 22 extends in a horizontal plane and comes into contact with the underside of the substrate W held by the rollers 11 to 14 to scrub it. The roll sponge 22 is disposed below the roll sponge 21 and is rotated by the rotation mechanism 32 around an axis in the longitudinal direction of the roll sponge 22. Although an elevation drive mechanism and the like are not shown, the rotation mechanism 32 and the roll sponge 22 also move up and down, similar to the roll sponge 21.
[0037] The chemical solution supply nozzle 4 is positioned below the substrate W (directly below or obliquely below) and supplies the chemical solution to the lower surface of the substrate W.
[0038] The pure water supply nozzle 5 is positioned below (directly below or diagonally below) the substrate W, and supplies pure water to the lower surface of the substrate W. One of the features of this embodiment is that the pure water supply nozzle 5 supplies pure water containing bubbles.
[0039] The control unit 6 controls the entire substrate cleaning apparatus. One of the features of this embodiment is that the control unit 6 controls the chemical solution supply nozzle 4 to supply the chemical solution, and then controls the pure water supply nozzle 5 to supply the bubble-containing pure water.
[0040] A specific example of the configuration of the pure water supply nozzle 5 will be shown. 4 is a schematic diagram showing an example of a pure water supply nozzle 5. This pure water supply nozzle 5 has a pure water supply unit 51, a gas supply unit 52, a housing 53, a bubble-containing pure water generator 54, and a single-tube nozzle 55. Pure water is supplied from the pure water supply unit 51, and a predetermined gas is supplied from the gas supply unit 52 to the bubble-containing pure water generator 54 located in the housing 53. Micropores are formed in the bubble-containing pure water generator 54, and the pure water and gas are mixed to generate bubble-containing pure water. The generated bubble-containing pure water is sprayed obliquely upward from the single-tube nozzle 55 protruding from the top surface of the housing 53. The sprayed bubble-containing pure water reaches near the center of the underside of the substrate W.
[0041] The pure water supply nozzle 5 may be fixed at a predetermined position, may be linearly movable, or may be swingable. When swinging, it is desirable that the pure water supply nozzle 5 swing between a position where the bubble-containing pure water is sprayed near the center of the underside of the substrate W and a position where the bubble-containing pure water is sprayed to the peripheral edge of the substrate W.
[0042] Furthermore, there are no particular limitations on the angle at which the bubble-containing pure water is supplied relative to the underside of the substrate W. However, if bubble-containing pure water is supplied only to the center of the underside of the substrate W, it is possible that the bubble-containing pure water will not reach the peripheral edge of the substrate W. Therefore, two or more pure water supply nozzles 5 may be provided, some of which supply bubble-containing pure water near the center of the underside of the substrate W, and others of which supply bubble-containing pure water to the peripheral edge of the underside of the substrate W.
[0043] 5A and 5B are schematic diagrams showing another example of a pure water supply nozzle 5 (FIG. 5A is a side view, and FIG. 5B is a schematic cross-sectional view). This pure water supply nozzle 5 includes a pure water supply unit 51, a gas supply unit 52, a housing 53, and a bubble-containing pure water generator 54. Pure water is supplied from the pure water supply unit 51, and a predetermined gas is supplied from the gas supply unit 52 to the bubble-containing pure water generator 54 disposed in the cylindrical housing 53. Micropores are formed in the bubble-containing pure water generator 54, and the pure water and gas are mixed to generate bubble-containing pure water. The generated bubble-containing pure water is sprayed upward from one or more spray holes 531 formed in the upper surface of the housing 53. The sprayed bubble-containing pure water reaches the underside of the substrate W.
[0044] By providing a large number of injection holes 531, it is possible to inject bubble-containing pure water over a wide area of the substrate W. It is desirable that some of the injection holes 531 are located below the center of the lower surface of the substrate W, and other parts are located below the peripheral portion of the lower surface of the substrate W.
[0045] It is also desirable to take measures to prevent air bubbles from accumulating on the upper surface of housing 53. As an example, as shown in the figure, an inclined surface 532 is provided that extends obliquely downward from injection hole 531. This allows air bubbles to rise along inclined surface 532 and be guided to injection hole 531 without accumulating on the upper surface of housing 53.
[0046] Here, from the viewpoint of increasing the buoyancy of the bubbles, it is desirable that the diameter of the bubbles in the bubble-containing pure water be large without bursting. However, it is desirable that the diameter of the bubbles be smaller than the liquid film of the chemical liquid formed on the underside of the substrate W. Specifically, since the thickness of the liquid film is about 200 to 500 μm, it is desirable that the diameter of the bubbles be 1 μm or more and 500 μm, more preferably 100 μm or more and 500 μm or less. It is also desirable that the diameter of the single-tube nozzle 55 in FIG. 4 or the diameter of the injection holes 531 in FIGS. 5A and 5B be larger than the diameter of the bubbles.
[0047] It is also desirable that the density of bubbles in the bubble-containing pure water is as high as possible, and the cleaning effect is particularly enhanced when the gas phase ratio is 80% or more.
[0048] The size and density of the bubbles can be adjusted, for example, by changing the size of the micropores in the bubble-containing pure water generator 54 shown in Figures 4 and 5B. The bubble-containing pure water generator 54 may also generate bubbles in the pure water by applying ultrasonic waves to the pure water, and the size and density of the bubbles can also be adjusted by changing the frequency of the ultrasonic waves.
[0049] In order to utilize the buoyancy of the bubbles and efficiently remove the liquid film of the chemical solution, it is desirable that the supply flow rate of the bubble-containing pure water be fast enough to prevent the bubbles from bursting. Specifically, it is desirable that the supply flow rate of the bubble-containing pure water from the pure water supply nozzle 5 be faster than the supply flow rate of the chemical solution from the chemical solution supply nozzle 4.
[0050] Furthermore, in addition to the chemical solution supply nozzle 4 and the pure water supply nozzle 5, an ultrasonic nozzle 61 may be provided to supply an ultrasonic cleaning solution to the underside of the substrate W (see FIG. 6A). Alternatively, in addition to the chemical solution supply nozzle 4 and the pure water supply nozzle 5, a two-fluid jet nozzle 62 may be provided to supply two fluids to the underside of the substrate W (see FIG. 6B). The two fluids may be, for example, a mixed fluid of a liquid (e.g., pure water) and a gas (e.g., nitrogen gas).
[0051] The gas species of the bubbles may be one or a mixture of two or more of nitrogen, hydrogen, ozone, carbon dioxide, and oxygen. That is, these gases may be supplied from the gas supply unit 52 in FIG. 4 or FIG. 5B.
[0052] When the bubbles contain nitrogen, the nitrogen bubbles reduce the amount of dissolved oxygen near the substrate W, and the nitrogen dissolved in the pure water acts as functional water to suppress the dissolution of oxygen. This makes it possible to suppress corrosion (particularly oxidation) of the metal film. Similarly, when the bubbles contain hydrogen, it is possible to suppress corrosion (particularly oxidation) of the metal film and also suppress the re-adhesion of ceria abrasive grains (the polishing liquid used in substrate polishing). When the bubbles contain ozone, it is possible to hydrophilize the substrate W and oxidize and dissolve organic and inorganic matter attached to the substrate W. When the bubbles contain carbon dioxide, it is possible to suppress the electrostatic charging of the substrate. By mixing bubbles of multiple gases, each of the respective effects can be obtained.
[0053] Since the effect varies depending on the type of gas bubbles contained, it is desirable to supply bubble-containing pure water containing bubbles of a gas type appropriate for the substrate W to be cleaned. For example, if a metal film such as a copper film is formed on the top surface of the substrate, it is desirable to use nitrogen or hydrogen to suppress oxidation of the metal film.
[0054] Furthermore, instead of pure water, other liquids containing bubbles may be supplied. The chemical liquid supplied from the chemical liquid supply nozzle may contain bubbles, which further improves the cleaning power.
[0055] 7 is a process diagram showing the procedure for cleaning a substrate. Before cleaning the substrate W, that is, when the substrate W is carried in, the rollers 11 to 14 are spaced apart from each other. The roll sponge 21 is raised, and the roll sponge 22 is lowered.
[0056] Then, with the roll sponges 21 and 22 separated from the substrate holding positions, the substrate W transported by a transport unit (not shown, for example, after being polished) is placed on the shoulders 11b to 14b of the rollers 11 to 14. Thereafter, the rollers 11 to 14 move in directions approaching each other, i.e., in directions toward the substrate W, so that the substrate W is held approximately horizontally by the holders 11a to 14a. As a result, the substrate W is held in an approximately horizontal direction by the rollers 11 to 14 (step S1).
[0057] If the substrate W to be cleaned has been polished, polishing debris and polishing liquid may adhere to the upper and lower surfaces of the substrate W.
[0058] Next, the roll sponge 21 descends to contact the upper surface of the substrate W, and the roll sponge 22 ascends to contact the lower surface of the substrate W. Then, while the substrate W is rotated in a horizontal plane by the rollers 11 to 14, the roll sponges 21 and 22 rotate about their axes to contact the upper and lower surfaces of the substrate W, respectively, thereby scrubbing the upper and lower surfaces of the substrate W (step S2). When the scrubbing is completed, the roll sponge 21 ascends to move away from the upper surface of the substrate W, and the roll sponge 22 descends to move away from the lower surface of the substrate W.
[0059] Thereafter, the chemical liquid is supplied from the chemical liquid supply nozzle 4 to the underside of the substrate W (step S3). In other words, the control unit 6 controls the chemical liquid supply nozzle 4 to supply the chemical liquid to the underside of the substrate W. As a result, a liquid film of the chemical liquid is formed on the underside of the substrate W, and the underside of the substrate W is rinsed with the chemical liquid.
[0060] After the chemical rinsing, bubble-containing pure water is supplied from the pure water supply nozzle 5 to the underside of the substrate W (step S4). In other words, the control unit 6 controls the pure water supply nozzle 5 to supply bubble-containing pure water to the underside of the substrate W. This performs a pure water rinse, and as described with reference to FIGS. 2A to 2C, the liquid film of the chemical liquid formed on the underside of the substrate W (at least a part, preferably most of it, and more preferably all of it) is replaced with the bubble-containing pure water and removed from the underside of the substrate W.
[0061] If the substrate cleaning apparatus has an ultrasonic nozzle 61, an ultrasonic cleaning liquid may be supplied in combination in step S4. If the substrate cleaning apparatus has a two-fluid jet nozzle 62, two fluids may be supplied in combination in step S4.
[0062] As described above, in this embodiment, in cleaning the underside of the substrate W, pure water containing bubbles is supplied after the chemical rinse. Therefore, the bubbles detach the liquid film of the chemical liquid from the underside of the substrate W, and prevent the liquid film from remaining on the underside of the substrate W. As a result, the cleaning power is improved.
[0063] The method for generating bubbles is not limited to the examples shown in FIGS. 4, 5A, and 5B, and any known method may be used.
[0064] The above-described embodiments have been described for the purpose of enabling a person of ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments would naturally be possible for a person skilled in the art, and the technical concept of the present invention may also be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but should be accorded the broadest scope consistent with the technical concept defined by the claims. [Explanation of symbols]
[0065] 11~14 Laura 21,22 Roll sponge 31,32 Rotation mechanism 4 Chemical supply nozzle 5 Pure water supply nozzle 51 Pure water supply section 52 Gas supply section 53 Case 531 Injection hole 532 Slope 54 Bubble-containing pure water generation unit 55 Single pipe nozzle 6 Control Unit 61 Ultrasonic nozzle 62 Two-fluid jet nozzle 100 liquid film
Claims
1. a first step of supplying a chemical solution to a lower surface of a substrate to form a liquid film of the chemical solution on the lower surface of the substrate; mixing pure water with a gas to produce a gas-containing liquid; and a second step of subsequently supplying the gas bubble-containing liquid to the underside of the substrate to replace the liquid film with the gas bubble-containing liquid.
2. 2. The substrate cleaning method according to claim 1, wherein the flow rate of the bubble-containing liquid supplied in the second step is faster than the flow rate of the chemical liquid supplied in the first step.
3. In the first step, a chemical solution is supplied from a first nozzle; 3. The substrate cleaning method according to claim 1, wherein in the second step, the bubble-containing liquid is supplied from a second nozzle different from the first nozzle.
4. 4. The substrate cleaning method according to claim 1, wherein in the second step, the bubble-containing liquid is supplied from a single-tube nozzle.
5. 5. The substrate cleaning method according to claim 1, wherein in the second step, the bubble-containing liquid is supplied to the vicinity of the center of the lower surface of the substrate and to the periphery of the substrate.
6. 6. The substrate cleaning method according to claim 1, wherein in the second step, the bubble-containing liquid and the ultrasonic cleaning liquid are supplied to the lower surface of the substrate.
7. 6. The substrate cleaning method according to claim 1, wherein the second step comprises supplying the bubble-containing liquid and two fluids to the lower surface of the substrate.
8. 8. The substrate cleaning method according to claim 1, wherein the bubble-containing liquid is pure water containing bubbles.
9. 9. The substrate cleaning method according to claim 1, wherein the diameter of the bubbles contained in the bubble-containing liquid is 1 [mu]m or more and 500 [mu]m or less.
10. 10. The substrate cleaning method according to claim 1, wherein the bubbles contained in the bubble-containing liquid are bubbles of one or more of nitrogen, hydrogen, ozone, carbon dioxide, and oxygen.
11. a metal film is formed on the upper surface of the substrate; The substrate cleaning method according to claim 10 , wherein the bubbles contained in the bubble-containing liquid include nitrogen and / or hydrogen bubbles.
12. The substrate cleaning method according to claim 1 , further comprising the step of scrubbing the underside of the substrate before the first step.
13. 13. The substrate cleaning method according to claim 1, wherein in the first step, a chemical solution containing bubbles is supplied.
14. a substrate holder that holds a substrate; a first nozzle that supplies a chemical solution to a lower surface of the held substrate; a second nozzle for supplying a bubble-containing liquid to a lower surface of the held substrate; a control unit that controls the second nozzle to supply the gas-bubble-containing liquid after the first nozzle has supplied the chemical liquid, The second nozzle is a gas supply unit; a liquid supply unit; a gas-bubble-containing liquid generating section that mixes the gas from the gas supply section and the liquid from the liquid supply section to generate the gas-bubble-containing liquid.
15. The substrate cleaning apparatus of claim 14 , wherein the second nozzle comprises a single-tube nozzle that sprays the generated bubble-containing liquid onto the lower surface of the substrate.
16. A substrate holder for holding a substrate; a first nozzle that supplies a chemical solution to a lower surface of the held substrate; a second nozzle for supplying a bubble-containing liquid to a lower surface of the held substrate; a control unit that controls the second nozzle to supply the gas-bubble-containing liquid after the first nozzle has supplied the chemical liquid, The second nozzle is a gas supply unit; a liquid supply unit; a gas-containing liquid generating unit that mixes the gas from the gas supply unit and the liquid from the liquid supply unit to generate the gas-containing liquid; a housing having an injection hole formed therein through which the generated gas bubble-containing liquid is injected; The upper surface of the housing has an inclined surface that extends obliquely downward from the injection hole.
Citation Information
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