Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device according to the present technology is provided with: a semiconductor chip; and a wiring board part that has a back surface on which an external connection terminal for electrical connection to the outside is formed, the back surface being on the reverse side of a front surface on which the semiconductor chip is mounted. With respect to this semiconductor device, the semiconductor chip is wire-bonded to the wiring board part by being connected to a terminal, which is formed on the front surface of the wiring board part, by means of a bonding wire; and a heat exhaust member is arranged between the bonding wire and the wiring board part.

Description

[Technical Field]

[0001] The present technology relates to a semiconductor device and a manufacturing method thereof, and in particular to a semiconductor device including a semiconductor chip and a wiring substrate portion on which the semiconductor chip is mounted and on which external connection terminals for electrical connection to the outside are formed on the back surface, which is the surface opposite to the front surface, which is the surface on which the semiconductor chip is mounted, and in which the semiconductor chip is wire-bonded to the wiring substrate portion by being connected to the terminals formed on the front surface side of the wiring substrate portion by bonding wires, and a manufacturing method thereof. [Background technology]

[0002] For example, among semiconductor devices such as solid-state imaging elements (image sensors), there are types in which a semiconductor chip on which various electronic circuit components such as transistors are formed is arranged inside a box-shaped housing formed by a wiring board portion, a frame portion, and a lid portion. The wiring board section is a section on which wiring is formed to enable the exchange of signals between the semiconductor chip and an external device. For example, the semiconductor chip is electrically connected to the wiring board section by wire bonding to terminals formed on the surface of the wiring board section, i.e., the surface on which the semiconductor chip is mounted.

[0003] In recent years, various semiconductor devices have been required to have higher functionality and faster processing speeds, and as a result, the power consumption of semiconductor chips has tended to increase, and the amount of heat generated by these chips has also tended to increase. For example, in the case of semiconductor devices used as solid-state imaging devices, the amount of heat generated by semiconductor chips has tended to increase due to demands for increased pixel counts and higher frame rates. An increase in the amount of heat generated by a semiconductor chip can cause deformation of the wiring substrate or the semiconductor chip itself, which can lead to a risk of the semiconductor chip failing to perform its intended function. For this reason, a cooling structure is provided in the semiconductor device.

[0004] Conventional cooling techniques for semiconductor devices include, for example, placing a cooling block on the back side of the semiconductor chip (see, for example, Patent Document 1 below) or placing a Peltier element (see, for example, Patent Document 2 below). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-98853 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-234127 Summary of the Invention [Problem to be solved by the invention]

[0006] However, with the above-mentioned conventional technology, it is necessary to secure space on the back side of the semiconductor chip to place cooling components such as a cooling block or Peltier element, which results in an increase in the size of the semiconductor device.

[0007] The present technology has been made in view of the above circumstances, and aims to prevent a semiconductor device from becoming larger due to cooling. [Means for solving the problem]

[0008] The semiconductor device according to the present technology comprises a semiconductor chip and a wiring substrate portion on which the semiconductor chip is mounted and on which external connection terminals for electrical connection to the outside are formed on the back side, which is the surface opposite to the front side, which is the surface on which the semiconductor chip is mounted, and the semiconductor chip is wire-bonded to the wiring substrate portion by being connected to the terminals formed on the front side of the wiring substrate portion by bonding wires, and a heat dissipation member is arranged between the bonding wires and the wiring substrate portion. The heat dissipation member refers to a member that forms at least a part of a heat dissipation path for cooling the heat generated in the semiconductor chip. According to the above configuration, the heat dissipation member is disposed near the semiconductor chip, which is a heat source. In this case, the semiconductor device can be cooled by the heat dissipation member disposed in the dead space below the bonding wires.

[0009] In the semiconductor device according to the present technology described above, at least a portion of the heat dissipation member may be in contact with a side surface of the semiconductor chip. This improves the efficiency of heat conduction from the semiconductor chip to the heat dissipation member.

[0010] In the semiconductor device according to the present technology described above, the heat dissipation member may be configured as a heat pipe. The heat pipe referred to here means a thermal conductor in which a refrigerant (for example, a liquid such as water) is sealed in a sealed container and which has a capillary structure (wick) on the inner wall.

[0011] In the semiconductor device according to the present technology described above, it is possible to configure the semiconductor device to have a frame portion that protrudes from the wiring substrate portion on the same side as the side on which the semiconductor chip is mounted, surrounds the sides of the semiconductor chip, and the frame portion covers the bonding wires. As a result, the inner periphery of the frame portion extends to the outer edge of the semiconductor chip.

[0012] In the semiconductor device according to the present technology described above, a frame portion is provided that protrudes from the wiring substrate portion on the same side as the side on which the semiconductor chip is mounted, is arranged more outer than the semiconductor chip, and surrounds the sides of the semiconductor chip, and a frame-internal heat dissipation member that is a heat dissipation member separate from the heat dissipation member is arranged within the frame portion. The wiring board portion also functions as a heat dissipation path for heat generated in the semiconductor chip, so the heat dissipation member within the frame also makes it possible to dissipate heat from the semiconductor chip (via the wiring board portion → frame portion).

[0013] In the semiconductor device according to the present technology described above, it is possible to configure the heat dissipation member so that at least a portion of the heat dissipation member is embedded in a groove formed on the front surface side of the wiring substrate portion. By embedding at least a portion of the heat dissipation member in the groove formed in the wiring substrate portion as described above, a heat dissipation member with a larger cross-sectional area can be used in the limited space below the bonding wires.

[0014] In the semiconductor device according to the present technology described above, the heat dissipation member may be bonded to the side surface of the semiconductor chip with a thermally conductive resin. For example, when a heat pipe is used as the heat dissipation member, and the cross section of the heat dissipation member is a shape other than rectangular, it is difficult to make the heat dissipation member adhere evenly to the side surface of the semiconductor chip. Therefore, by adhering the heat dissipation member to the side surface of the semiconductor chip using a thermally conductive resin, the degree of thermal adhesion of the heat dissipation member to the semiconductor chip can be increased.

[0015] In the semiconductor device according to the present technology described above, the semiconductor chip may be formed in a substantially rectangular plate shape, and the heat dissipation member may be configured to contact all four side surfaces of the semiconductor chip. This allows the heat generated in the semiconductor chip to be guided to the heat dissipation member from all four side surfaces of the semiconductor chip.

[0016] In the semiconductor device according to the present technology described above, a communication path from the heat exhaust member to the heat dissipation portion may be formed on the front surface side of the wiring substrate portion. This makes it possible to eliminate the need to drill holes in the wiring board portion when connecting the heat dissipation member and the communication path.

[0017] In the semiconductor device according to the present technology described above, a communication path from the heat exhaust member to the heat dissipation portion can be formed on the rear surface side of the wiring substrate portion. This makes it possible to eliminate the need for processing the frame part (forming grooves for passing communication paths) when attaching a molded product as a frame part to a wiring board part.

[0018] The semiconductor device according to the present technology described above can be configured to include a frame portion that protrudes from the wiring substrate portion on the same side as the side on which the semiconductor chip is mounted and surrounds the sides of the semiconductor chip, and a transparent resin that is filled in the space surrounded by the frame portion. In other words, the area surrounded by the frame portion is not sealed from above by a lid such as glass, which is a so-called cavityless structure.In this case, the semiconductor chip is covered with transparent resin within the space surrounded by the frame portion.

[0019] The semiconductor device according to the present technology described above can be configured as a semiconductor device serving as a solid-state imaging element. This improves the cooling efficiency of the semiconductor device as a solid-state imaging device.

[0020] The method for manufacturing a semiconductor device according to the present technology is a method for manufacturing a semiconductor device comprising a semiconductor chip, and a wiring substrate portion on which the semiconductor chip is mounted and on which external connection terminals for electrical connection to the outside are formed on the back side, which is the surface opposite to the front side, which is the surface on which the semiconductor chip is mounted, and in which the semiconductor chip is connected to the terminals formed on the front side of the wiring substrate portion by bonding wires and wire-bonded to the wiring substrate portion, and includes at least a step of arranging a heat dissipation member at a position between the bonding wires and the wiring substrate portion. By using such a manufacturing method, it is possible to manufacture the semiconductor device according to the present technology described above. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is a schematic vertical cross-sectional view of a semiconductor device according to a first embodiment of the present technology; [Figure 2] 1 is a schematic plan view of a semiconductor device according to a first embodiment of the present technology; [Figure 3] FIG. 10 is a schematic vertical cross-sectional view of a semiconductor device as a modified example of the first embodiment. [Figure 4] FIG. 10 is a schematic plan view of a semiconductor device as a modified example of the first embodiment. [Figure 5] 1A to 1C are explanatory diagrams illustrating an example of a manufacturing method of a semiconductor device according to a first embodiment; [Figure 6] FIG. 10 is an explanatory diagram of a modified example of the position where the connection route is formed. [Figure 7] FIG. 10 is a schematic vertical cross-sectional view of a semiconductor device according to a second embodiment. [Figure 8] FIG. 10 is a schematic plan view of a semiconductor device according to a second embodiment. [Figure 9] 10A to 10C are explanatory diagrams illustrating an example of a manufacturing method of a semiconductor device according to a second embodiment. [Figure 10] FIG. 10 is a schematic vertical cross-sectional view of a semiconductor device according to a third embodiment. [Figure 11] FIG. 10 is a schematic plan view of a semiconductor device according to a third embodiment. [Figure 12] 10A to 10C are explanatory diagrams illustrating an example of a manufacturing method of a semiconductor device according to a third embodiment. [Figure 13] FIG. 10 is a schematic vertical cross-sectional view of a semiconductor device as a first example of a fourth embodiment. [Figure 14] 10A to 10C are explanatory diagrams illustrating an example of a manufacturing method of a semiconductor device as a first example in the fourth embodiment. [Figure 15] FIG. 10 is a schematic vertical cross-sectional view of a semiconductor device as a second example of the fourth embodiment. [Figure 16] FIG. 13 is a schematic vertical cross-sectional view of a semiconductor device as a third example of the fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0022] The embodiments will be described below in the following order. <1. First embodiment> (1-1. Configuration example of semiconductor device) (1-2. Example of manufacturing method of semiconductor device) 2. Second Embodiment 3. Third Embodiment 4. Fourth Embodiment <5. Variations> <6. Summary of embodiments> <7. This Technology>

[0023] <1. First embodiment> (1-1. Configuration example of semiconductor device) A semiconductor device 1 according to a first embodiment will be described with reference to FIGS. 1 is a schematic vertical cross-sectional view of the semiconductor device 1, and FIG. 2 is a schematic plan view of the semiconductor device 1. The vertical direction here refers to a direction parallel to the thickness direction of the semiconductor chip 2 included in the semiconductor device 1.

[0024] The semiconductor device 1 comprises at least a semiconductor chip 2 on which various electronic circuit components such as transistors are formed, a wiring board portion 3 on which wiring is formed to enable signal exchange between the semiconductor chip 2 and an external device (an external device of the semiconductor device 1), a frame-shaped frame portion 4 that forms the side wall portion of the semiconductor device 1, a lid portion 5 for sealing the area surrounded by the frame portion 4, and a heat dissipation member 6 that forms at least a part of a heat dissipation path for cooling the heat generated in the semiconductor chip 2. Here, the wiring board section 3 can be said to be an interposer board.

[0025] In this example, the semiconductor device 1 is configured as a solid-state imaging element (image sensor) such as a CCD (Charge Coupled Device) sensor or a CMOS (Complementary Metal Oxide Semiconductor) sensor. In this example, the semiconductor chip 2 is a semiconductor chip for receiving light to obtain an image, and has a plurality of pixels arranged two-dimensionally, each having a photoelectric conversion element that performs photoelectric conversion, and a pixel circuit for reading out the accumulated charge of the photoelectric conversion element for each pixel. The semiconductor chip 2 has a rectangular plate-like outer shape.

[0026] The semiconductor chip 2 is mounted on the wiring substrate part 3. Hereinafter, the surface of the wiring substrate part 3 on which the semiconductor chip 2 is mounted will be referred to as the front surface Sf, and the surface opposite to the front surface Sf will be referred to as the back surface Sb.

[0027] The wiring board part 3 is formed by alternately laminating wiring layers, on which electrical wiring is formed in a predetermined pattern, and insulating layers. Vias are formed in the insulating layers, and the electrical wiring between the wiring layers is electrically connected by the vias.

[0028] On the surface Sf of the wiring substrate portion 3, a plurality of terminals Tb for electrical connection with the semiconductor chip 2 are formed. The semiconductor chip 2 is fixed to the surface Sf of the wiring substrate part 3 by a chip adhesive 10 such as die bonding, and the terminals Tb formed on the surface Sf of the wiring substrate part 3 are electrically connected to corresponding terminals via bonding wires W. In other words, the semiconductor chip 2 is electrically (and physically) connected to the wiring substrate part 3 by wire bonding.

[0029] In this embodiment, a protruding portion 3a is formed on the back surface Sb of the wiring substrate portion 3, protruding to the side opposite to the side on which the semiconductor chip 2 is mounted. In this example, this protruding portion 3a is formed in a substantially rectangular frame shape in a plan view. A plurality of external connection terminals Te are formed at the tip of the protruding portion 3a in the protruding direction for electrically connecting the semiconductor device 1 with an external device. Signals can be exchanged between the external device and the semiconductor chip 2 via these external connection terminals Te.

[0030] In this example, an electronic component 7 is mounted on the rear surface Sb of the wiring substrate portion 3 in a portion surrounded by the protruding portion 3a. Note that the "electronic component" referred to here broadly refers to a semiconductor chip other than the semiconductor chip 2, another semiconductor device having a package structure, or an electronic component as a passive component for the semiconductor chip 2. In FIG. 1, the mounting of multiple such "electronic components" is shown, and each electronic component is given the same reference numeral "7." However, when multiple electronic components are mounted, the electronic components may have the same function or different functions. Furthermore, the electronic components may have different shapes, sizes, etc.

[0031] The frame portion 4 protrudes from the wiring substrate portion 3 on the same side as the side on which the semiconductor chip 2 is mounted, and surrounds the sides of the semiconductor chip. Specifically, the frame portion 4 in this example is provided on the surface Sf of the wiring substrate portion 3, closer to the outer periphery than the semiconductor chip 2. The thickness of the frame portion 4, in other words, the overall height of the frame portion 4, is made greater than the height (height from the wiring substrate portion 3) of the bonding wires W. This enables the frame portion 4 to protect components such as the semiconductor chip 2 and the bonding wires W mounted on the surface Sf side of the wiring substrate portion 3 from the sides.

[0032] The lid portion 5 is in the shape of a substantially rectangular plate, and is disposed on the frame portion 4 so as to cover the entire space enclosed by the frame portion 4 above the surface Sf of the wiring board portion 3. The lid portion 5 is adhered to the frame portion 4 with a lid adhesive 11. The entire space surrounded by the frame part 4 is sealed by this lid part 5 to protect the semiconductor chip 2 from the external environment such as water, humidity, and external forces. Specifically, in this example, the space surrounded by the frame part 4 is filled with dry air or nitrogen and then sealed by the lid part 5, or is evacuated and then sealed by the lid part 5 (i.e., vacuum sealed). In the semiconductor device 1 of this example, which is a solid-state imaging element, the lid portion 5 is made of a transparent substrate such as glass.

[0033] The heat dissipation member 6 is disposed between the bonding wires W and the wiring substrate part 3. That is, the heat dissipation member 6 is disposed at a position below the bonding wires W on the wiring substrate part 3. In this example, a heat pipe is used as the heat dissipation member 6. The heat pipe here refers to a thermal conductor in which a refrigerant (for example, a liquid such as water) is sealed (for example, vacuum sealed) in a sealed container and which has a capillary structure (wick) on the inner wall. As the heat pipe, a metal pipe made of, for example, copper or aluminum, which has excellent thermal conductivity, can be used.

[0034] In this example, the heat dissipation member 6 is formed so as to surround approximately the entire side surface of the semiconductor chip 2. One end and the other end of the heat dissipation member 6 that surrounds approximately the entire side surface of the semiconductor chip 2 are connected via a connection path 20. Although not shown in the figure, a heat dissipation section is formed at the end of the connection path 20 to cool (liquefy) the refrigerant (vaporized by heating) in the heat pipe, and the refrigerant can circulate (loop) through the heat dissipation member 6, the connection path 20, and the heat dissipation section. Here, the connection path 20 and the heat dissipation section also have a heat pipe structure, and it can be said that the connection path 20 and the heat dissipation section constitute part of the heat pipe.

[0035] In a heat pipe, the inside is kept under highly reduced pressure, which makes it easy for the liquid refrigerant to evaporate. When part of the heat pipe is heated, the liquid refrigerant becomes a vapor stream and moves to the unheated, low-temperature part (the heat dissipation section mentioned above). The vapor that moves comes into contact with the inner wall of the heat dissipation section and returns to liquid, transferring heat. This is called the release of heat through latent heat of condensation. The refrigerant that has returned to liquid travels back to its original location through the capillary structure, and when heated again, the above evaporation, movement, and condensation repeat, transporting heat. This principle makes it possible to cool the target heat source.

[0036] Here, at least a portion of the heat dissipation member 6 is in contact with the side surfaces of the semiconductor chip 2. Specifically, the heat dissipation member 6 in this example is in contact with all four side surfaces of the semiconductor chip 2.

[0037] In this example, the heat dissipation member 6 is at least partially embedded in a groove 31 formed on the surface Sf side of the wiring substrate portion 3. The groove 31 is formed so as to surround the periphery of the semiconductor chip 2 in a plan view, similar to the heat dissipation member 6, thereby burying the entire heat dissipation member 6 in a plan view. The depth of the groove 31 is formed shallower than the overall height of the heat dissipation member 6, which allows a portion of the heat dissipation member 6 to protrude from the groove 31 and a portion of the protruding portion of the heat dissipation member 6 to come into contact with the side of the semiconductor chip 2.

[0038] By burying at least a part of the heat dissipation member 6 in the groove 31, it becomes possible to use a heat dissipation member 6 with a larger cross-sectional area in the limited space below the bonding wires W. For example, as a specific example of numerical values, the clearance in the height direction from the bonding wire W to the wiring substrate portion 3 is approximately 120 μm to 150 μm. On the other hand, when a heat pipe is used as the heat dissipation member 6, the thickness of the heat pipe currently is, for example, 150 μm or more. For this reason, it is currently difficult to arrange the heat pipe in the space below the bonding wire W without processing the wiring substrate portion 3, and therefore providing the groove 31 as described above is effective.

[0039] In this example, the heat dissipation member 6 is bonded to the side surface of the semiconductor chip 2 with a thermally conductive resin 15 . It is desirable to use a thermosetting resin with relatively high thermal conductivity as the thermally conductive resin 15. Examples include resin paste for die bonding and resin paste containing silver paste. Specific examples include the ATROX (registered trademark) D800HT series manufactured by Techno Alpha Corporation.

[0040] When a heat pipe is used as the heat dissipation member 6 as in this example, or when the cross-sectional shape of the heat dissipation member 6 is a shape other than a rectangle, it is difficult to make the heat dissipation member 6 adhere evenly to the side surfaces of the semiconductor chip 2. Therefore, the heat dissipation member 6 is bonded to the side surfaces of the semiconductor chip 2 using thermally conductive resin 15, thereby increasing the degree of thermal adhesion of the heat dissipation member 6 to the semiconductor chip 2.

[0041] It is not essential to use an adhesive material to increase the thermal adhesion of the heat dissipation member 6 to the semiconductor chip 2. As an example, it is possible to apply a heat dissipation paste such as TIM (Thermal Interface Materials) manufactured by Cosmo Oil Lubricants Co., Ltd. so as to fill the gap between the heat dissipation member 6 and the semiconductor chip 2.

[0042] In this example, a communication path 20 from the heat exhaust member 6 to the heat dissipation section is formed on the rear surface Sb side of the wiring board section 3. Specifically, in this case, a portion 20a of the connection path 20 (see FIG. 1) is disposed in a groove 32 that penetrates the wiring board portion 3 in the thickness direction, and is connected to an end of the heat dissipation member 6, a portion of which is embedded in the groove 31. In this example, there are two connection paths 20, and a portion 20a of one connection path 20 is connected to one end of the heat dissipation member 6, and a portion 20a of the other connection path 20 is connected to the other end of the heat dissipation member 6.

[0043] By forming the connection path 20 on the back surface Sb of the wiring substrate portion 3 as described above, when attaching a molded product to the wiring substrate portion 3 as the frame portion 4, it becomes possible to eliminate the need for processing on the frame portion 4 side (forming a groove 32 for passing the connection path 20 therethrough).

[0044] 3 and 4 are diagrams for explaining the configuration of a semiconductor device 1′ as a modified example of the first embodiment, with FIG. 3 being a schematic vertical cross-sectional view of the semiconductor device 1′ and FIG. 4 being a schematic plan view of the semiconductor device 1′. In the following description, parts that are similar to parts that have already been described will be given the same reference numerals and description thereof will be omitted.

[0045] The semiconductor device 1' is different from the semiconductor device 1 in the path layout of the heat dissipation member 6. In the semiconductor device 1', a part of the heat dissipation member 6 is disposed in a position below the semiconductor chip 2 inside the wiring substrate portion 3. Specifically, in this example, the heat dissipation member 6 is formed to have a plurality of folded portions below the semiconductor chip 2. The folded portions referred to here mean portions that are folded in the surface direction of the wiring substrate portion 3. In this example, the remaining portion of the heat dissipation member 6 is arranged along the side surface of the semiconductor chip 2, as in the case of the semiconductor device 1, and is partially in contact with the side surface of the semiconductor chip 2.

[0046] In this case, grooves 31' are formed in the wiring substrate part 3 instead of the grooves 31. The grooves 31' are formed to a depth such that the heat dissipation members 6 are buried (i.e., entirely buried) in the portions positioned below the semiconductor chip 2, and are formed to a depth such that part of the heat dissipation members 6 protrudes from the grooves 31' in the portions along the side surfaces of the semiconductor chip 2 (a depth that allows part of the heat dissipation members 6 to come into contact with the side surfaces of the semiconductor chip 2). In this case, too, one end of the heat exhaust member 6 is connected to one of the connection paths 20 and the other end of the heat exhaust member 6 is connected to the other connection path 20, similar to the semiconductor device 1.

[0047] By disposing a part of the heat dissipation member 6 below the semiconductor chip 2 as described above, it becomes possible to dissipate heat from below the semiconductor chip 2 as well, and the cooling efficiency of the semiconductor chip 2 can be improved. Furthermore, by forming the heat dissipation member 6 in a folded state below the semiconductor chip 2, the efficiency of heat dissipation from the semiconductor chip 2 to the heat dissipation member 6 can be improved, and in this respect too, the cooling efficiency can be improved.

[0048] (1-2. Example of manufacturing method of semiconductor device) An example of a method for manufacturing the semiconductor device 1 will be described with reference to FIG. First, grooves 31 are formed in the wiring substrate part 3 by countersinking using a router bit or the like (see FIG. 5A). As can be understood from the above explanation, the grooves 31 are formed on the front surface Sf side of the wiring substrate part 3 at positions that will be around the mounting positions of the semiconductor chips 2. 5A, a groove 32 for arranging a portion 20a of the connection path 20 in the wiring substrate portion 3 is also formed. In the manufacturing process of the semiconductor device 1' described with reference to FIGS. 3 and 4, the groove 31' described above is formed in place of the groove 31 in the process of FIG. 5A.

[0049] Next, after mounting electronic components 7 on the back surface Sb of the wiring substrate portion 3, the semiconductor chip 2 is mounted on the front surface Sf of the wiring substrate portion 3 (see FIG. 5B). The semiconductor chip 2 is adhered to a predetermined position on the front surface Sf of the wiring substrate portion 3, which is on the inner periphery side of the groove 31, using a chip adhesive 10.

[0050] Next, the heat dissipation member 6 serving as a heat pipe is placed and adhered, and wire-bonded with a bonding wire W (see FIG. 5C). Specifically, a thermally conductive resin 15, such as a thermosetting resin, is applied to the heat dissipation member 6 placed in the groove 31, and the thermally conductive resin 15 is thermally cured. Then, a terminal formed on the semiconductor chip 2 and a terminal Tb formed on the surface Sf of the wiring substrate part 3 are connected with a bonding wire W, and the semiconductor chip 2 is wire-bonded to the wiring substrate part 3. In this example, after this wire bonding, a process for forming the connection path 20 is carried out. At this time, a portion 20a of the connection path 20 is inserted into the groove 32. There are two portions 20a, one corresponding to one end and the other end of the heat dissipation member 6, and in this example, the connection between one end of the heat dissipation member 6 and one portion 20a, and the connection between the other end of the heat dissipation member 6 and the other portion 20a are each carried out so as to maintain the heat pipe structure.

[0051] Next, the frame portion 4, which is a molded product made of, for example, a mold resin, is attached to the surface Sf side of the wiring board portion 3 (see FIG. 5D). Then, the lid 5 as a transparent substrate is adhered to the frame 4 using the lid adhesive 11 applied to the frame 4, thereby sealing the space surrounded by the frame 4 on the surface Sf of the wiring substrate 3 (see Figure 5E). As a result, the semiconductor device 1 described with reference to FIGS. 1 and 2 is produced.

[0052] Although the above example shows the connection path 20 being arranged on the back surface Sb of the wiring substrate portion 3, the connection path 20 can also be arranged on the front surface Sf of the wiring substrate portion 3, as in the semiconductor device 1″ shown in FIG. 6. FIG. 6 shows an example in which a groove for embedding the connection path 20 is formed on the surface Sf side of the wiring substrate part 3, and a heat dissipation member serving as the connection path 20 is disposed in the groove.

[0053] Here, when a molded product is used as the frame part 4, depending on the depth of the groove formed on the surface Sf for the connecting path 20, it may not be possible to fit the connecting path 20 within the groove, and it may be necessary to form a groove in the frame part 4 to pass the connecting path 20 through. However, if the frame portion 4 is not a molded product but is formed on the wiring board portion 3 by transfer molding (a molding method in which a mold is placed and resin is poured into it), the process of forming a groove in the frame portion 4 can be eliminated.

[0054] Here, when forming a connection path 20 on the surface Sf side of the wiring substrate portion 3 as shown in Figure 6, it is possible to use a heat pipe in which the heat dissipation member 6 portion and the connection path 20 portion are integrated.

[0055] 2. Second Embodiment Next, a semiconductor device 1A as a second embodiment will be described with reference to Figures 7 and 8. Figures 7 and 8 are a schematic vertical cross-sectional view and a schematic plan view of the semiconductor device 1A, respectively. The semiconductor device 1A of the second embodiment differs from the semiconductor device 1 of the first embodiment in that a frame portion 4A is provided instead of the frame portion 4. The frame portion 4A differs from the frame portion 4 in that it is formed in a position that covers the bonding wire W. In this example, the frame portion 4A is formed so as to cover the entire bonding wire W. As a result, the inner periphery of the frame portion 4A extends to the outer edge of the semiconductor chip 2. In the semiconductor device 1 of the first embodiment, a gap occurs between the semiconductor chip 2 and the frame portion 4, which increases the size of the semiconductor device 1. However, in the semiconductor device 1A of the second embodiment, no gap occurs between the semiconductor chip 2 and the frame portion 4A, which allows the semiconductor device 1A to be made smaller.

[0056] In this example, the frame portion 4A is formed on the wiring board portion 3 by, for example, transfer molding, rather than by bonding a molded product to the wiring board portion 3. When a molded product is used as the frame portion 4A, it is desirable to form grooves for accommodating the bonding wires W and the outer edge of the semiconductor chip 2.

[0057] FIG. 9 is an explanatory diagram of an example of a manufacturing method for the semiconductor device 1A according to the second embodiment. The steps shown in FIGS. 9A to 9C are similar to those explained with reference to FIGS. 5A to 5C, and therefore will not be explained again. In this case, after the step of Fig. 9C (wire bonding and formation of connection paths 20), the step of forming frame portion 4A shown in Fig. 9D is carried out. For example, in this example, frame portion 4A is formed by transfer molding.

[0058] After the frame portion 4A is formed, the space surrounded by the frame portion 4A is sealed by adhering the lid portion 5 as a transparent substrate with the lid portion adhesive 11 applied onto the frame portion 4A as shown in FIG. 9E.

[0059] Here, for the semiconductor device 1A, an example has been given in which the connection path 20 is formed on the back surface Sb of the wiring substrate portion 3, as in the semiconductor device 1, but the connection path 20 can also be formed on the front surface Sf of the wiring substrate portion 3, as in the semiconductor device 1'' (Figure 6). Also, in the second embodiment, it is possible to adopt a configuration in which a part of the heat dissipation member 6 is disposed below the semiconductor chip 2, as in the semiconductor device 1' (FIGS. 3 and 4).

[0060] 3. Third Embodiment 10 and 11 are a schematic vertical cross-sectional view and a schematic plan view, respectively, of a semiconductor device 1B according to the third embodiment. The semiconductor device 1B as the third embodiment has a heat dissipation member other than the heat dissipation member 6 provided on the side surface of the semiconductor chip 2, which is arranged within the frame portion that forms the side wall portion of the semiconductor device 1B (in the figure, the heat dissipation member 8 within the frame). The wiring board section 3 also functions as a heat dissipation path for the heat generated in the semiconductor chip 2, and therefore the heat from the semiconductor chip 2 can also be dissipated by the in-frame heat dissipation member 8.

[0061] The semiconductor device 1B differs from the semiconductor device 1 in that a frame portion 4B is provided instead of the frame portion 4, and an in-frame heat exhaust member 8 is provided within the frame portion 4B. Like the heat exhaust member 6, the in-frame heat exhaust member 8 is also formed of, for example, a heat pipe. In this case, a groove 33 for embedding a part of the in-frame heat exhaust member 8 is formed in the area covered by the frame portion 4B in the wiring board portion 3. In this example, as illustrated in Fig. 11, the in-frame heat exhaust member 8 is also formed so as to go substantially all the way around the side of the semiconductor chip 2, similar to the heat exhaust member 6, and the groove 33 is also formed so as to go substantially all the way around the side of the semiconductor chip 2.

[0062] The in-frame heat exhaust member 8 is coated with a thermally conductive resin 15 from above, and is bonded to the wiring board section 3. This allows the degree of thermal adhesion to the wiring board section 3 to be increased.

[0063] The frame portion 4B is formed so as to cover the in-frame heat exhaust member 8 bonded to the wiring board portion 3 in this manner. The frame portion 4B can also be formed by, for example, transfer molding, similar to the frame portion 4A. Alternatively, a molded product having a groove formed therein capable of accommodating the in-frame heat dissipation member 8 can be attached to the wiring board portion 3.

[0064] In this example, the heat exhaust member 6 and the in-frame heat exhaust member 8 share the connection path 20. Specifically, as shown in Fig. 11 , one end of the in-frame heat exhaust member 8 is connected to the connection path 20 that is connected to one end of the heat exhaust member 6, and the other end of the in-frame heat exhaust member 8 is connected to the connection path 20 that is connected to the other end of the heat exhaust member 6.

[0065] Furthermore, in this example, the connection path 20 is formed on the back surface Sb side of the wiring substrate unit 3, as in the case of the semiconductor device 1. Therefore, in this case, the wiring substrate unit 3 is formed with grooves 32 for connecting the heat exhaust member 6 and the connection path 20, as well as grooves 32B (two for one end and the other end) that penetrate through in the thickness direction for connecting the in-frame heat exhaust member 8 and the connection path 20. A portion 20b of the connection path 20 (a portion different from the aforementioned portion 20a) is inserted into these grooves 32B and connected to the in-frame heat exhaust member 8.

[0066] In this example, the in-frame heat exhaust member 8 shares the communication path 20 with the heat exhaust member 6, in other words, shares the heat dissipation section. However, it is also possible to form the cooling circuit passing through the heat exhaust member 6 and the cooling circuit passing through the in-frame heat exhaust member 8 as different loop circuits, and to adopt a configuration in which the heat exhaust member 6 and the in-frame heat exhaust member 8 are connected to different heat dissipation sections.

[0067] An example of a manufacturing method for the semiconductor device 1B according to the third embodiment will be described with reference to FIG. First, grooves 31 and 32 as well as grooves 33 and 32B are formed in wiring substrate part 3 by, for example, countersinking using a router bit or the like (see FIG. 12A). Then, similar to the step of FIG. 5B described above, a step of bonding semiconductor chip 2 to wiring substrate part 3 is performed (see FIG. 12B).

[0068] 12C, the heat dissipation member 6 is placed in the groove 31, and the in-frame heat dissipation member 8 is placed in the groove 33. After applying thermally conductive resin 15 to the heat dissipation member 6 and the in-frame heat dissipation member 8, the thermally conductive resin 15 is thermally cured. Also, in the step shown in FIG. 12C, the terminals of the semiconductor chip 2 are wire-bonded to the terminals Tb using the bonding wires W, and the step of forming the connection paths 20 is performed. That is, in this case, the portion 20a inserted into the groove 32 is connected to the heat dissipation member 6, and the portion 20b inserted into the groove 32B is connected to the in-frame heat dissipation member 8, so that the heat dissipation member 6 and the in-frame heat dissipation member 8 are connected to the connection paths 20.

[0069] Next, in the process shown in Figure 12D, a frame portion 4B covering the heat dissipation member 8 within the frame is formed on the surface Sf side of the wiring substrate portion 3, and then in the process shown in Figure 12E, a lid portion 5 as a transparent substrate is adhered using a lid portion adhesive 11 applied to the frame portion 4B, thereby sealing the space surrounded by the frame portion 4B.

[0070] Of the heat exhaust member 6 and the in-frame heat exhaust member 8, the heat exhaust member 6 may be omitted and only the in-frame heat exhaust member 8 may be provided.

[0071] 4. Fourth Embodiment The fourth embodiment is an embodiment relating to a so-called cavity-less structure. 13 is a schematic longitudinal sectional view of a semiconductor device 1C as a first example of the fourth embodiment. The cavity-less structure omits the transparent substrate as the lid 5, and seals the space surrounded by the frame by filling it with transparent resin 16. Specifically, the semiconductor device 1C as a first example is a semiconductor device 1 of the first embodiment to which a cavityless structure has been applied, and compared to the semiconductor device 1, the lid portion 5 (and the lid portion adhesive 11) is omitted, and instead a transparent resin 16 is filled in the space surrounded by the frame portion 4.

[0072] By adopting a cavityless structure, the semiconductor chip 2 is covered with transparent resin 16 within the space surrounded by the frame portion 4. When a cavity structure is adopted in which the space surrounded by the frame portion 4 is sealed with the lid portion 5, the space surrounded by the frame portion 4 is either in a vacuum state or filled with a predetermined gas such as nitrogen, but when a cavityless structure in which the space is filled with transparent resin 16 is adopted, the thermal conductivity within the area surrounded by the frame portion 4 can be increased more than in this case. Therefore, heat is efficiently conducted from the top surface side of the semiconductor chip 2 to the transparent resin 16, and thereby heat is efficiently conducted from the transparent resin 16 to the heat dissipation member 6, thereby improving cooling efficiency.

[0073] In addition, Figure 13 shows an example in which the connection path 20 is formed on the back surface Sb of the wiring substrate portion 3 as an example in which a cavity-less structure is adopted, but in this case too, the connection path 20 can be formed on the front surface Sf of the wiring substrate portion 3. Furthermore, even when a cavity-less structure is adopted, a configuration in which part of the heat dissipation member 6 is disposed below the semiconductor chip 2 can be adopted, as exemplified in FIGS.

[0074] FIG. 14 is an explanatory diagram of an example of a manufacturing method for the semiconductor device 1C. The steps in FIGS. 14A to 14D are similar to the steps explained in FIGS. 5A to 5D, respectively, and therefore will not be explained again. In this case, after the frame portion 4 is formed in the step of FIG. 14D, the space surrounded by the frame portion 4 is filled with transparent resin 16 in the step of FIG. 14E.

[0075] FIG. 15 is a schematic vertical cross-sectional view of a semiconductor device 1D as a second example of the fourth embodiment, and FIG. 16 is a schematic vertical cross-sectional view of a semiconductor device 1E as a third example of the fourth embodiment. The second example of the semiconductor device 1D is a semiconductor device 1A (Figures 7 and 8) according to the second embodiment to which a cavityless structure is applied, and the third example of the semiconductor device 1E is a semiconductor device 1B (Figures 10 and 11) according to the third embodiment to which a cavityless structure is applied. In the manufacturing methods of these semiconductor devices 1D and 1E, instead of the steps of Figure 9E and Figure 12E, respectively, a step of filling the space surrounded by the frame portion 4A with transparent resin 16 and a step of filling the space surrounded by the frame portion 4B with transparent resin 16 may be performed.

[0076] <5. Variations> Here, the embodiment is not limited to the specific example described above, and various modified configurations can be adopted. For example, the materials and shapes of the components constituting the semiconductor device are merely examples, and it goes without saying that materials and shapes other than those exemplified may be used.

[0077] In addition, although a cooling circuit using a heat pipe is given above as an example of a cooling circuit for the heat generated in the semiconductor chip 2, the cooling circuit using a heat pipe is not limited to the loop type shown in the example. For example, a cooling circuit in which a part of a rod-shaped heat pipe is arranged along one of the side surfaces of the semiconductor chip 2 may be used.

[0078] Furthermore, although the above example gives an example in which the heat dissipation member 6 (and the heat dissipation member 8 within the frame) is a heat pipe, it is possible to use a member other than a heat pipe as the heat dissipation member 6, such as a tubular member in which the refrigerant moves based on the power of an actuator such as a motor rather than capillary action.

[0079] Furthermore, in the above example, the frame portion that serves as the sidewall portion of the semiconductor device is separate from the wiring board portion, but the frame portion may be integrated with the wiring board portion.

[0080] Although the above provides an example in which the present technology is applied to a semiconductor device as a solid-state imaging element, the present technology can be widely and suitably applied to semiconductor devices other than solid-state imaging elements, such as a semiconductor device as a light-emitting device in which light-emitting elements such as a VCSEL (Vertical Cavity Surface Emitting Laser) are arranged in an array, or a semiconductor device as a distance measurement sensor in which pixels that receive light for distance measurement are arranged two-dimensionally.

[0081] <6. Summary of embodiments> As described above, the semiconductor device of the embodiment (1, 1', 1", 1A, 1B, 1C, 1D, 1E) comprises a semiconductor chip (2) and a wiring substrate portion (3) on which the semiconductor chip is mounted and on which external connection terminals (Te) for electrical connection to the outside are formed on the back surface, which is the surface opposite to the front surface, which is the surface on which the semiconductor chip is mounted, and the semiconductor chip is connected to the terminals formed on the front surface of the wiring substrate portion by bonding wires (W) and wire-bonded to the wiring substrate portion, and a heat dissipation member (6) is arranged between the bonding wires and the wiring substrate portion. According to the above-described configuration, the heat dissipation member is disposed near the semiconductor chip, which is a heat source. In this case, the semiconductor device can be cooled by the heat dissipation member disposed in the dead space below the bonding wires. Since the semiconductor device can be cooled by the heat exhaust member disposed in the dead space, it is possible to prevent the semiconductor device from becoming larger due to cooling.

[0082] In the semiconductor device of the embodiment, at least a portion of the heat dissipation member is in contact with the side surface of the semiconductor chip. This improves the efficiency of heat conduction from the semiconductor chip to the heat dissipation member. Therefore, the cooling efficiency can be improved.

[0083] Furthermore, in the semiconductor device of the embodiment, the heat dissipation member is configured as a heat pipe. Because heat pipes are capable of circulating refrigerant through capillary action, they do not require a drive unit to circulate the refrigerant, simplifying the cooling configuration and reducing the number of parts required for cooling, thereby reducing the cost of the semiconductor device.

[0084] Furthermore, in the semiconductor device of the embodiment (same 1A), a frame portion (same 4A) is provided that protrudes from the wiring substrate portion on the same side as the side on which the semiconductor chip is mounted and surrounds the sides of the semiconductor chip, and the frame portion covers the bonding wires. As a result, the inner periphery of the frame portion extends to the outer edge of the semiconductor chip. Therefore, the semiconductor device can be made smaller than in the case of a package in which the inner peripheral edge of the frame portion is located on the outer peripheral side of the semiconductor chip. Furthermore, when the semiconductor device is a solid-state image sensor, the bonding wires are covered by the frame portion, thereby achieving the effect of reducing flare caused by the bonding wires.

[0085] In addition, the semiconductor device of the embodiment (same as 1B) is provided with a frame portion (same as 4B) that protrudes from the wiring substrate portion on the same side as the side on which the semiconductor chip is mounted, is arranged on the outer periphery of the semiconductor chip, and surrounds the sides of the semiconductor chip, and an in-frame heat dissipation member (same as 8), which is a heat dissipation member separate from the heat dissipation member, is arranged within the frame portion. The wiring board portion also functions as a heat dissipation path for heat generated in the semiconductor chip, so the heat dissipation member within the frame also makes it possible to dissipate heat from the semiconductor chip (via the wiring board portion → frame portion). Therefore, the cooling efficiency can be improved. Furthermore, since the interior of the frame is also dead space, this dead space can be effectively utilized as a heat dissipation path.

[0086] Furthermore, in the semiconductor device of the embodiment, at least a part of the heat dissipation member is embedded in the grooves (31, 31') formed on the surface side of the wiring substrate portion. By embedding at least a portion of the heat dissipation member in the groove formed in the wiring substrate portion as described above, a heat dissipation member with a larger cross-sectional area can be used in the limited space below the bonding wires. Therefore, the efficiency of heat dissipation by the heat dissipation member can be improved, and the cooling efficiency can be improved.

[0087] Furthermore, in the semiconductor device of the embodiment, the heat dissipation member is bonded to the side surface of the semiconductor chip with a thermally conductive resin (15). For example, when a heat pipe is used as the heat dissipation member, and the cross section of the heat dissipation member is a shape other than rectangular, it is difficult to make the heat dissipation member adhere evenly to the side surface of the semiconductor chip. Therefore, by adhering the heat dissipation member to the side surface of the semiconductor chip using a thermally conductive resin, the degree of thermal adhesion of the heat dissipation member to the semiconductor chip can be increased. This allows the heat from the semiconductor chip to be efficiently conducted to the heat dissipation member via the thermally conductive resin, thereby improving the cooling efficiency. In addition, by using a resin material, a thermosetting resin can be selected as the thermal conductive resin, which makes it possible to improve the efficiency of the bonding process for the heat dissipation member, and since the position of the heat dissipation member can be fixed by bonding, it is possible to improve the stability of cooling performance.

[0088] In the semiconductor device of the embodiment, the semiconductor chip is formed in a substantially rectangular plate shape, and the heat dissipation member is in contact with all four side surfaces of the semiconductor chip. This allows the heat generated in the semiconductor chip to be guided to the heat dissipation member from all four side surfaces of the semiconductor chip. Therefore, the cooling efficiency can be improved.

[0089] Furthermore, in the semiconductor device (same as 1") of the embodiment, a communication path (same as 20) from the heat exhaust member to the heat dissipation part is formed on the front surface side of the wiring board part. This makes it possible to eliminate the need to drill holes in the wiring board portion when connecting the heat dissipation member and the communication path. Therefore, the processing steps for realizing the cooling function using the heat dissipation member can be simplified, and the manufacturing costs of the semiconductor device can be reduced. Furthermore, when electronic components other than semiconductor chips are mounted on the back side of the wiring board, the connection path must be formed to avoid these formation areas, which raises concerns about a reduction in the layout freedom of the connection path. However, by forming the connection path on the front side of the wiring board as described above, it is possible to avoid the layout constraint of avoiding the electronic components, thereby improving the layout freedom of the connection path.

[0090] Furthermore, in the semiconductor device of the embodiment, the communication path from the heat exhaust member to the heat dissipation section is formed on the back surface side of the wiring board section. This makes it possible to eliminate the need for processing the frame part (forming grooves for passing communication paths) when attaching a molded product as a frame part to a wiring board part. Therefore, in cases where processing of the frame portion is difficult, it is possible to avoid such difficult processing, and by improving the ease of manufacturing the semiconductor device, it is possible to reduce the manufacturing costs of the semiconductor device.

[0091] In addition, the semiconductor device of the embodiment (same as 1C, 1D, 1E) is provided with a frame portion that protrudes from the wiring substrate portion on the same side as the side on which the semiconductor chip is mounted and surrounds the sides of the semiconductor chip, and a transparent resin (same as 16) filled in the space surrounded by the frame portion. In other words, the area surrounded by the frame portion is not sealed from above by a lid such as glass, which is a so-called cavityless structure.In this case, the semiconductor chip is covered with transparent resin within the space surrounded by the frame portion. When a cavity structure is adopted in which the space surrounded by the frame is sealed with a lid, the space surrounded by the frame is either in a vacuum state or filled with a predetermined gas such as nitrogen, but when a cavityless structure is adopted in which the space is filled with a transparent resin, the thermal conductivity within the area surrounded by the frame can be increased. Therefore, heat is efficiently conducted from the top surface of the semiconductor chip to the transparent resin, and thereby heat is efficiently conducted from the transparent resin to the heat dissipation member, thereby improving cooling efficiency. Furthermore, because of the cavity-less structure, the process for sealing using a lid is not required, which contributes to reducing the manufacturing costs of the semiconductor device.

[0092] Furthermore, the semiconductor device of the embodiment is a semiconductor device serving as a solid-state image sensor. This makes it possible to improve the cooling efficiency of the semiconductor device as a solid-state imaging element.

[0093] The method for manufacturing a semiconductor device according to the embodiment includes a semiconductor chip and a wiring substrate portion on which the semiconductor chip is mounted and on which external connection terminals for electrical connection to the outside are formed on the back surface, which is the surface opposite to the front surface, which is the surface on which the semiconductor chip is mounted, and in which the semiconductor chip is connected to the terminals formed on the front surface side of the wiring substrate portion by bonding wires and wire-bonded to the wiring substrate portion, and the method for manufacturing a semiconductor device includes at least a step of arranging a heat dissipation member at a position between the bonding wires and the wiring substrate portion. By using such a manufacturing method, the semiconductor device according to the above-described embodiment can be manufactured.

[0094] The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0095] <7. This Technology> The present technology can also be configured as follows. (1) A semiconductor chip; a wiring substrate portion on which the semiconductor chip is mounted and on which an external connection terminal for electrical connection to the outside is formed on a back surface, which is the surface opposite to the front surface, which is the surface on which the semiconductor chip is mounted; the semiconductor chip is connected to a terminal formed on the front surface side of the wiring substrate portion by a bonding wire and wire-bonded to the wiring substrate portion; A heat dissipation member is disposed between the bonding wire and the wiring substrate portion. Semiconductor device. (2) At least a portion of the heat dissipation member is in contact with a side surface of the semiconductor chip. The semiconductor device according to (1) above. (3) The heat dissipation member is constituted by a heat pipe. The semiconductor device according to (1) or (2). (4) a frame portion that protrudes from the wiring substrate portion toward the same side as the side on which the semiconductor chip is mounted and surrounds the sides of the semiconductor chip; The frame portion covers the bonding wires. The semiconductor device according to any one of (1) to (3). (5) a frame portion that protrudes from the wiring substrate portion toward the same side as the side on which the semiconductor chip is mounted, and is provided on the outer periphery of the semiconductor chip to surround the sides of the semiconductor chip; In the frame portion, an in-frame heat exhaust member that is a heat exhaust member separate from the heat exhaust member is disposed. The semiconductor device according to any one of (1) to (3). (6) At least a portion of the heat dissipation member is embedded in a groove formed on the surface side of the wiring substrate portion. The semiconductor device according to any one of (1) to (5). (7) The heat dissipation member is bonded to the side surface of the semiconductor chip with a thermally conductive resin. The semiconductor device according to any one of (1) to (6). (8) The semiconductor chip is formed in a substantially rectangular plate shape, The heat dissipation member is in contact with all four sides of the semiconductor chip. The semiconductor device according to any one of (1) to (7). (9) A communication path from the heat exhaust member to the heat dissipation section is formed on the front surface side of the wiring board section. The semiconductor device according to any one of (1) to (8). (10) A communication path from the heat exhaust member to the heat dissipation section is formed on the rear surface side of the wiring board section. The semiconductor device according to any one of (1) to (8). (11) a frame portion that protrudes from the wiring substrate portion toward the same side as the side on which the semiconductor chip is mounted and surrounds the sides of the semiconductor chip; a transparent resin filled in the space surrounded by the frame portion. The semiconductor device according to any one of (1) to (10) above. (12) It was made into a semiconductor device as a solid-state imaging element. The semiconductor device according to any one of (1) to (11) above. (13) A semiconductor chip; a wiring substrate portion on which the semiconductor chip is mounted and on which an external connection terminal for electrical connection to the outside is formed on a back surface, which is the surface opposite to the front surface, which is the surface on which the semiconductor chip is mounted; A method of manufacturing a semiconductor device in which the semiconductor chip is connected to a terminal formed on the front surface side of the wiring substrate portion by a bonding wire and wire-bonded to the wiring substrate portion, The method includes at least a step of arranging a heat dissipation member at a position between the bonding wire and the wiring substrate portion. A method for manufacturing a semiconductor device. [Explanation of symbols]

[0096] 1,1',1”,1A,1B,1C,1D,1E Semiconductor device 2. Semiconductor chips 3 Wiring board section 3a Protrusion 4, 4A, 4B Frame section 5 Lid 6 Heat dissipation components 7. Electronic Components 8. Heat dissipation member inside the frame 10 Chip Adhesive 11 Lid adhesive 15 Thermally conductive resin 16 Transparent resin 20 Contact Routes 20a,20b part 31,31',32,32B,33 Groove W Bonding Wire Te external connection terminal Tb terminal

Claims

1. A semiconductor chip; a wiring substrate portion on which the semiconductor chip is mounted and on which an external connection terminal for electrical connection to the outside is formed on a back surface, which is the surface opposite to the front surface, which is the surface on which the semiconductor chip is mounted; the semiconductor chip is connected to a terminal formed on the front surface side of the wiring substrate portion by a bonding wire and wire-bonded to the wiring substrate portion; a heat dissipation member is disposed between the bonding wire and the wiring substrate portion; At least a portion of the heat dissipation member is in contact with a side surface of the semiconductor chip. Semiconductor device.

2. The heat dissipation member is constituted by a heat pipe. The semiconductor device according to claim 1 .

3. a frame portion that protrudes from the wiring substrate portion toward the same side as the side on which the semiconductor chip is mounted and surrounds the sides of the semiconductor chip; The frame portion covers the bonding wires. The semiconductor device according to claim 1 .

4. a frame portion that protrudes from the wiring substrate portion toward the same side as the side on which the semiconductor chip is mounted, and is provided on the outer periphery of the semiconductor chip to surround the sides of the semiconductor chip; In the frame portion, an in-frame heat exhaust member that is a heat exhaust member separate from the heat exhaust member is disposed. The semiconductor device according to claim 1 .

5. At least a portion of the heat dissipation member is embedded in a groove formed on the surface side of the wiring substrate portion. The semiconductor device according to claim 1 .

6. The heat dissipation member is bonded to the side surface of the semiconductor chip with a thermally conductive resin. The semiconductor device according to claim 1 .

7. The semiconductor chip is formed in a substantially rectangular plate shape, The heat dissipation member is in contact with all four sides of the semiconductor chip. The semiconductor device according to claim 1 .

8. A communication path from the heat exhaust member to the heat dissipation section is formed on the front surface side of the wiring board section. The semiconductor device according to claim 1 .

9. A communication path from the heat exhaust member to the heat dissipation section is formed on the rear surface side of the wiring board section. The semiconductor device according to claim 1 .

10. a frame portion that protrudes from the wiring substrate portion toward the same side as the side on which the semiconductor chip is mounted and surrounds the sides of the semiconductor chip; a transparent resin filled in the space surrounded by the frame portion. The semiconductor device according to claim 1 .

11. It was made into a semiconductor device as a solid-state imaging element. The semiconductor device according to claim 1 .

12. A semiconductor chip; a wiring substrate portion on which the semiconductor chip is mounted and on which an external connection terminal for electrical connection to the outside is formed on a back surface, which is the surface opposite to the front surface, which is the surface on which the semiconductor chip is mounted; A method of manufacturing a semiconductor device in which the semiconductor chip is connected to a terminal formed on the front surface side of the wiring substrate portion by a bonding wire and wire-bonded to the wiring substrate portion, The method includes at least a step of arranging a heat dissipation member between the bonding wires and the wiring substrate portion so that at least a portion of the heat dissipation member is in contact with a side surface of the semiconductor chip. A method for manufacturing a semiconductor device.

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