Photoelectric conversion device, photoelectric conversion system, and mobile body

Abstract

To provide a technique advantageous for improving the speed of signal transfer from a photoelectric conversion device to another device.SOLUTION: The photoelectric conversion device includes a pixel array including a plurality of pixels, a signal processing unit including an AD conversion unit for converting an analog signal output from the pixel array to a digital signal and an output unit that outputs an amplitude modulation signal having an amplitude value selected from three or more amplitude values on the basis of the signal output from the signal processing unit.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a photoelectric conversion device. 、 The present invention relates to a photoelectric conversion system and a mobile object. [Background technology]

[0002] Patent Document 1 discloses a solid-state imaging device having a pixel array section, a drive section that drives the pixel array section, a signal processing section, a memory section, a data processing section, and a control section. The signal processing section performs signal processing including digitization (AD conversion) on signals read out from the pixel array section. The memory section stores image data that has been subjected to signal processing by the signal processing section. The data processing section reads out the pixel data stored in the memory section in a predetermined order and performs processing to output the data outside the chip. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. WO2014-007004 Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, in systems including semiconductor devices such as photoelectric conversion devices or light emitting devices and other devices, it has become an issue that the signal transfer speed between the semiconductor device and other devices can limit the performance of the entire system.

[0005] An object of one aspect of the present invention is to provide an advantageous technique for improving the transfer speed of a signal from a photoelectric conversion device to another device. [Means for solving the problem]

[0007] One aspect of the present invention relates to a photoelectric conversion device, the photoelectric conversion device including: a pixel array having a plurality of pixels; a signal processing unit including an AD conversion unit that converts an analog signal output from the pixel array into a digital signal; and an amplitude modulation signal having an amplitude value selected from three or more amplitude values ​​based on the signal output from the signal processing unit. Signal generation circuit a first power supply potential line and a second power supply potential line to which a power supply potential of a value different from that of the first power supply potential line is applied, the output unit is connected to the first power supply potential line, the output unit includes a current path having a first switch connected to the first power supply potential line, a second switch connected to the second power supply potential line, and a resistive element connected to the first switch and the second switch, and an on / off state of the first switch and an on / off state of the second switch are changed in accordance with the selected amplitude value; The power consumption of the current path is changed in a direction opposite to the direction of change in the power consumption of the signal generating circuit caused by the change in the amplitude value. . [Effects of the Invention]

[0009] According to one aspect of the present invention, there is provided an advantageous technique for improving the transfer speed of a signal from a photoelectric conversion device to another device. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a diagram showing an example of the arrangement of a photoelectric conversion device according to a first embodiment. [Figure 2] FIG. 2 is a diagram showing an example of the configuration of a pixel of a photoelectric conversion device. [Figure 3] FIG. 2 is a diagram showing an example of the configuration of an output unit of a photoelectric conversion device. [Figure 4] FIG. 2 is a diagram showing an example of the configuration of a transmitter in an output section. [Figure 5] FIG. 10 is a diagram showing an example of the operation of a decoder. [Figure 6] FIG. 2 is a diagram illustrating an example of the operation of a transmitter. [Figure 7] FIG. 2 is a diagram illustrating an example of the operation of a transmitter. [Figure 8] FIG. 2 is a diagram illustrating an example of the operation of a transmitter. [Figure 9] FIG. 2 is a diagram illustrating an example of the operation of a transmitter. [Figure 10] FIG. 2 is a diagram illustrating an example of the operation of a transmitter. [Figure 11] FIG. 2 is a diagram showing an example of the layout of a photoelectric conversion device. [Figure 12] FIG. 2 is a diagram showing an example of the arrangement of an output section, a signal processing section, and a pad group. [Figure 13] FIG. 10 is a diagram showing a first modified example of the transmitter. [Figure 14] FIG. 10 is a diagram showing a second modified example of the transmitter. [Figure 15] FIG. 10 is a diagram showing a third modified example of the transmitter. [Figure 16] FIG. 10 is a diagram showing an example of the configuration of a light emitting device according to a second embodiment. [Figure 17] FIG. 2 is a diagram showing an example of the configuration of a light-emitting unit. [Figure 18] FIG. 1 is a diagram showing an example of the configuration of a photoelectric conversion system. [Figure 19] FIG. 1 is a diagram showing an example of the configuration of a photoelectric conversion system and a moving object. [Figure 20] FIG. 1 is a diagram showing an example of the operation of a photoelectric conversion system. [Figure 21] FIG. 1 is a diagram showing a first example of a system including a photoelectric conversion device. [Figure 22] FIG. 10 is a diagram showing a second example of a system including a photoelectric conversion device. [Figure 23] FIG. 10 is a diagram showing a third example of a system including a photoelectric conversion device. [Figure 24] FIG. 10 is a diagram showing a fourth example of a system including a photoelectric conversion device. [Figure 25] FIG. 10 is a diagram showing a transmitter (second output unit) that can be applied to a fourth example of a system including a photoelectric conversion device. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0013] The photoelectric conversion device PEC according to the first embodiment will be described below. The photoelectric conversion device PEC can be configured as, for example, an imaging device, but the photoelectric conversion device PEC may also be configured as other devices such as a distance measuring device or a photometric device. The distance measuring device can be configured as, for example, a focus detection device or a TOF (Time Of Flight) distance measuring device. The photometric device can be configured to measure, for example, the light intensity distribution within the field of view of the camera.

[0014] FIG. 1 schematically shows the configuration of a photoelectric conversion device PEC. The photoelectric conversion device PEC may be configured in the form of a semiconductor chip. The semiconductor chip may include a stacked structure of multiple substrates. The photoelectric conversion device PEC may include, for example, a pixel array 20, a signal processing unit SP, and a row selection circuit (vertical scanning circuit) 110. The signal processing unit SP may include multiple column circuits CC. The pixel array 20 may include multiple pixels 10 and multiple vertical signal lines. The multiple pixels 10 may be arranged to form multiple rows and multiple columns. The row selection circuit 110 may be configured to select multiple rows in the pixel array 20, each row consisting of an array of multiple pixels 10, in a predetermined order.

[0015] In the example of FIG. 1 , the plurality of vertical signal lines of the pixel array 20 include vertical signal lines 30 for odd-numbered columns and vertical signal lines 31 for even-numbered columns, but this is not intended to limit the invention. Also, in the example of FIG. 1 , column circuits (plurality of column circuits CC in FIG. 1 ) that process signals output through the vertical signal lines 30 for odd-numbered columns and column circuits (not shown) that process signals output through the vertical signal lines 31 for even-numbered columns may be provided separately from each other. However, this is not intended to limit the invention. Below, the column circuits CC that process signals for odd-numbered columns will be described, but the column circuits that process signals for even-numbered columns may also have a configuration similar to that of the column circuits CC that process signals for odd-numbered columns.

[0016] The column circuit CC may include, for example, a current supply circuit 40 that supplies a current to a vertical signal line 30 corresponding to the column circuit CC among the multiple vertical signal lines 30. The column circuit CC may include a comparator 60 that compares the value of a signal provided from the corresponding vertical signal line 30 with the value of a ramp signal provided from a ramp signal generation circuit 50. The column circuit CC may include a first memory 70 that holds a count value provided from a counter 90 in response to inversion of the output of the comparator 60. The counter 90 may be provided commonly to the multiple vertical signal lines 30, or may be provided individually for each of the multiple vertical signal lines 30. The comparator 60 and the first memory 70 may constitute an AD converter ADC that generates a digital signal corresponding to the signal (analog signal) provided from the vertical signal line 30. The column circuit CC may include a second memory 80 that receives the signal (digital signal) held by the first memory 70. The signal processing unit SP or the column circuit CC may include other circuits (e.g., an analog amplifier circuit, a CDS circuit). The signal processing unit SP may include a processing circuit (e.g., a digital processing circuit) 95 that processes signals supplied from the plurality of second memories 80 or column circuits CC. The processing circuit 95 may include a column selection circuit (horizontal scanning circuit) that selects and outputs signals output from the plurality of column circuits CC in a predetermined order. The photoelectric conversion device PEC may include an output unit 100 that outputs signals generated by processing by the processing circuit 95. The processing circuit 95 may be configured to output image signals generated using the plurality of pixels 10, or may be configured to output signals obtained by processing image signals generated using the plurality of pixels 10.

[0017] FIG. 2 shows an example configuration of each pixel 10. The pixel 10 includes at least a photoelectric conversion element 400. The photoelectric conversion element 400 may be, for example, a photodiode. The pixel 10 may also include a floating diffusion 420 and a transfer transistor 410 that transfers charges generated in the photoelectric conversion element 400 to the floating diffusion 420. A gate of the transfer transistor 410 may be connected to a transfer control line TX driven by the row selection circuit 110. The transfer transistor 410 may transfer charges generated in the photoelectric conversion element 400 to the floating diffusion 420 when the voltage of the transfer control line TX is driven to an active level. The floating diffusion 420 may function as a charge-voltage converter that converts the charges transferred from the photoelectric conversion element 400 by the transfer transistor 410 into a voltage (potential).

[0018] The pixel 10 may also include a reset transistor 455 that resets the voltage (potential) of the floating diffusion 420. A gate of the reset transistor 455 may be connected to a reset control line RES driven by the row selection circuit 110. The reset transistor 455 may reset the voltage (potential) of the floating diffusion 420 when the voltage of the reset control line RES is driven to an active level. The pixel 10 may also include an amplifier transistor 430 that outputs a signal corresponding to the voltage (potential) of the floating diffusion 420 to the vertical signal line 30. The amplifier transistor 430 and the current supply circuit 40 may form a source follower amplifier circuit. The pixel 10 may also include a selection transistor 440 that places the pixel 10 in a selected or unselected state. A gate of the selection transistor 440 may be connected to a selection control line SEL driven by the row selection circuit 110. The selection transistor 440 selects the pixel 10 when the voltage of the selection control line SEL is driven to an active level, and deselects the pixel 10 when the voltage of the selection control line SEL is driven to an inactive level.

[0019] The pixel 10 is not limited to the above configuration and may be modified in various ways. For example, the pixel 10 may have a function that allows the capacitance value of the floating diffusion 420 to be changed, in other words, a function that allows the sensitivity to be changed. The pixel 10 may be configured so that multiple photoelectric conversion elements 400 share the floating diffusion 420. The pixel 10 may be configured as a pixel that can detect a phase difference by allocating such multiple photoelectric conversion elements 400 to one microlens.

[0020] FIG. 3 shows an example configuration of the output unit 100. Parallel signals each consisting of multiple bits may be supplied to the output unit 100 from the processing circuit 95. One parallel signal may be a signal from one pixel 10 (for example, a signal output from the pixel 10, subjected to AD conversion by an AD converter ADC, and then processed by the processing circuit 95). In the example of FIG. 3, two sets of parallel signals, each consisting of 14 bits, are supplied from the processing circuit 95 to the output unit 100. The photoelectric conversion device PEC may be configured as a semiconductor chip and may include output pads 250 and 251. The output pads 250 and 251 may be connected to each other by a termination resistor 260 that may be provided outside the semiconductor chip.

[0021] The output unit 100 may include, for example, parallel-serial converters 200 and 201 and a transmitter 210. In one example, the parallel-serial converter 200 may receive signals from one pixel 10 as parallel signals (parallel data) from the processing circuit 95 simultaneously or in parallel. The parallel-serial converter 201 may receive signals from another pixel 10 as parallel signals (parallel data) from the processing circuit 95 simultaneously or in parallel. Each of the parallel-serial converters 200 and 201 may convert the parallel signals received thereinto a serial signal and supply the serial signal to the transmitter 210. In the example of FIG. 3 , the parallel-serial converter 200 converts the parallel signals received thereinto a serial signal and outputs the serial signal in <0> The parallel-to-serial converter 201 converts the supplied parallel signal into a serial signal and supplies it to the transmitter 210. <1> to the transmitter 210 as

[0022] In the example of Fig. 3, transmitter 210 is configured to output an amplitude-modulated signal having two bits of information at a time. In other words, transmitter 210 is configured to output an amplitude-modulated signal having an amplitude value selected from four amplitude values. However, transmitter 210 may be configured to output an amplitude-modulated signal having an amplitude value selected from any number of amplitude values ​​equal to or greater than three (e.g., 4, 6, 8, etc.). In the example of Fig. 3, transmitter 210 includes decoder 270, 1-bit transmitters 220 and 221, resistors 230 and 231, and switch S9.

[0023] For example, at a certain timing, the serial signal in <0> The LSB value of the 14-bit parallel signal of one pixel 10 is supplied from the parallel-serial converter 200 to the transmitter 210 (decoder 270) as <1> The LSB value of the 14-bit parallel signal of the other pixel 10 is supplied from the parallel-serial converter 201 to the transmitter 210 (decoder 270) as the LSB value of the 14-bit parallel signal of the other pixel 10. The transmitter 210 outputs an amplitude modulated signal having an amplitude value selected from four amplitudes in accordance with the two inputs as a differential output voltage out between the output pads 250 and 251 (between both ends of the termination resistor 260). In other words, the amplitude modulated signal or differential output voltage out output by the transmitter 210 between the output pads 250 and 251 (between both ends of the termination resistor 260) is a differential output voltage out of the two serial signals in <1> , in <0> The amplitude can take four different values ​​depending on the value of In this way, the output section 100 outputs a signal having two bits of information from the output pads 250 and 251 at a time.

[0024] This makes it possible to improve the signal transfer speed from the photoelectric conversion device PEC to other devices. Also, from another perspective, the photoelectric conversion device PEC makes it possible to improve the signal transfer speed from the photoelectric conversion device PEC to other devices while suppressing an increase in the number of output pads required for outputting signals from the pixel array 20. This is useful for increasing the number of power supply potential pads and ground potential pads for the pixel array 20, the comparator 60 (AD converter), the first memory 70, the second memory 80, etc., and suppressing deterioration in image quality.

[0025] 4 shows an example configuration of 1-bit transmitters 220 and 221 that constitute transmitter 210. 1-bit transmitter 220 may include, for example, resistor 300, switches S1, S2, S5, S6, and resistor 350. Similarly, 1-bit transmitter 221 includes, for example, resistor 301, switches S3, S4, S7, S8, and resistor 351. In the example of FIG. 4, resistors 300 and 350 of 1-bit transmitter 220 are 50 Ω, and resistors 301 and 351 of 1-bit transmitter 221 are 100 Ω, which are different values. Transmitter 210 also includes resistors 230 and 231 and switch S9.

[0026] 5 illustrates the operation of the decoder 270. The decoder 270 receives the serial signal in <1> , i <0> and output terminals for outputting switch control signals SC1 to SC9, respectively. The switch control signals SC1 to SC9 are supplied to the switches S1 to S9, respectively. In this example, when the switch control signals SC1 to SC9 have a value of 1, the switches S1 to S9 are turned on (conductive), and when the switch control signals SC1 to SC9 have a value of 0, the switches S1 to S9 are turned off (non-conductive).

[0027] Figure 6 shows the serial signal in <1> , in <0> 6 shows the operating states of switches S1 to S9 in transmitter 210 when .times. ...

[0028] Figure 7 shows the serial signal in <1> , in <0> 7 shows the operating states of switches S1 to S9 in transmitter 210 when GND is 1, 1. As shown in FIG. 7, switches S1, S3, S6, and S8 are turned on, and other switches S2, S4, S5, and S7 are turned off. When switches S1 and S3 are turned on, resistors 300 and 301 are connected in parallel between the power supply and output pad 251, and their combined resistance is approximately 33 Ω. When switches S6 and S8 are turned on, resistors 350 and 351 are connected in parallel between the ground potential and output pad 250, and their combined resistance is approximately 33 Ω. For example, when the power supply potential is 0.5 V, the potential of output pad 251 is 400 mV, the potential of output pad 250 is 100 mV, and the differential output voltage out is +300 mV.

[0029] Figure 8 shows the serial signal in <1> , in <0> 8 shows the operating states of switches S1 to S9 in transmitter 210 when .sigma. is 0 or 1. As shown in FIG. 8, switches S4, S7, and S9 are turned on, and the other switches S1, S2, S3, S5, S6, and S8 are turned off. When switch S4 is turned on, resistor 301 is connected between the power supply potential and output pad 250, and the resistance thereof is 100 Ω. When switch S7 is turned on, resistor 351 is connected between the ground potential and output pad 251, and the resistance thereof is 100 Ω. When switch S9 is turned on, resistors 230 and 231 are connected between output pad 250 and output pad 251 in addition to termination resistor 260, and the combined resistance thereof is 50 Ω. Therefore, for example, when the power supply potential is 0.5V, the potential of the output pad 250 is 300mV, the potential of the output pad 251 is 200mV, and the differential output voltage out is −100mV.

[0030] Figure 9 shows the in <1> , in <0> 9 shows the operating states of switches S1 to S9 in transmitter 210 when GND is 1 or 0. As shown in FIG. 9, switches S3, S8, and S9 are turned on, and the other switches S1, S2, S4, S5, S6, and S7 are turned off. When switch S3 is turned on, resistor 301 is connected between the power supply potential and output pad 251, and the resistance of this resistor is 100 Ω. When switch S8 is turned on, resistor 351 is connected between the ground potential and output pad 250, and the resistance of this resistor is 100 Ω. When switch S9 is turned on, resistors 230 and 231 are connected between output pad 250 and output pad 251 in addition to termination resistor 260, and the combined resistance of these resistors is 50 Ω. Therefore, for example, when the power supply potential is 0.5V, the potential of the output pad 251 is 300mV, the potential of the output pad 250 is 200mV, and the differential output voltage out is +100mV.

[0031] 4, the output unit 100 includes a voltage divider circuit capable of changing the voltage division ratio, and the output signal of the output unit 100, i.e., the amplitude modulated signal, is generated by changing the voltage division ratio of the voltage divider circuit. <1> , in <0> The switches are controlled by a decoder 270 which generates switch control signals SC1 to SC9 based on the signal.

[0032] Figure 10 shows the serial signal in <1> , in <0> 4 to 10, the output unit 100 or the transmitter 210 outputs an amplitude-modulated signal having an amplitude value selected from the four amplitude values.

[0033] 3, the signal of pixel 10 is 14 bits, but this is merely an example and the present invention is not limited to this. The signal of pixel 10 can be quantized to any number of bits, such as 10, 12, or 16 bits.

[0034] 3, the value of a certain bit (e.g., LSB) of the digital signal of one pixel 10 and the value of the same bit (e.g., LSB) of the digital signal of another pixel 10 are simultaneously supplied to the transmitter 210. In this case, for example, an amplitude-modulated signal amplitude-modulated by the LSB value of the digital signal of one pixel 10 and the LSB value of the digital signal of the other pixel 10 is output from the output unit 100. Next, an amplitude-modulated signal amplitude-modulated by the value of the second bit of two pixels is output from the output unit 100. Thereafter, amplitude-modulated signals amplitude-modulated by the value of each bit from the third bit onwards are output sequentially from the output unit 100, and finally, an amplitude-modulated signal amplitude-modulated by the MSB value of each digital signal of the two pixels is output from the output unit 100.

[0035] This configuration has the advantage that the configuration of the signal processing section of an external device (e.g., a processor) that receives the amplitude-modulated signal output from the output section 100 of the photoelectric conversion device PEC can easily be made common with a configuration that receives a binary output. Specifically, in the case of a binary output, if a signal is output in the order of LSB, second bit, ..., MSB of the digital signal of one pixel, then in the case of a quaternary output, the signals for two pixels are output in the order of LSB, second bit, ..., MSB. Therefore, after the signals for two pixels are first separated (decoded), the same signal processing as in the case of a binary output can be performed. However, other configurations may also be adopted, such as a configuration that simultaneously outputs the LSB value and MSB value of the same pixel.

[0036] The resistance values ​​of resistors 300, 301, 350, 351, 230, and 231 in the above description are merely examples. These resistance values ​​can be adjusted to adjust the amplitude and output resistance of the output signal. For example, resistors 300 and 350 may be set to 60 Ω or 70 Ω, which is greater than 50 Ω. In this case, the amplitude of the output signal is adjusted to a smaller absolute value from ±300 mV in FIG. 10.

[0037] 11(a) and 11(b) illustrate layouts of the photoelectric conversion device PEC. Here, FIG. 11(a) schematically illustrates a pixel substrate 600, and FIG. 11(b) schematically illustrates a circuit substrate 610. The photoelectric conversion device PEC may be configured as a semiconductor chip SCP including a stacked structure of a pixel substrate 600 and a circuit substrate 610. A pixel array 20 is disposed on the pixel substrate 600. Signal processing units 620 and 621 may be disposed on the circuit substrate 610. The left half region (signal processing unit 620) and the right half region (signal processing circuit 621) of the circuit substrate 610 may be manufactured by exposing the substrate twice using a common mask set. In this case, the signal processing units 620 and 621 have substantially the same configuration. However, by performing batch exposure on only the upper layer metal, the wiring states within the signal processing units 620 and 621 can be made different from each other.

[0038] The circuit board 610 may include row selection circuits (vertical scanning circuits) 630-633. The row selection circuits (vertical scanning circuits) 630-633 may constitute the row selection circuit 110 described above. The circuit board 610 may also include a plurality of signal processing units 650a-650d. The plurality of signal processing units 650a-650d constitute the signal processing unit SP described above. The plurality of signal processing units 650a-650d may have the same configuration. Each of the plurality of signal processing units 650a-650d may include the plurality of column circuits CC described above. The circuit board 610 may include a plurality of output units 100a-100b. The plurality of output units 100a-100b may have the same configuration as the output unit 100 described above. The signals of the pixels 10 in the rows selected by the row selection circuits 630-633 from among the multiple rows of the pixel array 20 can be read out by the multiple signal processing units 650a-650d on the circuit board 610 via inter-substrate junctions (not shown). In the example of FIG. 11, the multiple output units 100a-100d are distributed and arranged in four regions. This further suppresses local increases in resistance of the power supply potential lines and ground potential lines in the pixel array 20 and the multiple signal processing units 650a-650d, thereby preventing image quality degradation due to local shading, crosstalk, etc. Deterioration of can be suppressed.

[0039] FIG. 12 illustrates an example of the arrangement of the output section 100 (100 represents 100a to 100d), the signal processing section 650 (650 represents 650a to 650d), and the pad group PG (PG represents PGa to PGd) connected thereto. The pad group PG may include power supply potential pads 500 and 510 for the pixel array 20 (pixels 10) and ground potential pads 501 and 511 for the pixel array 20 (pixels 10). The power supply potential pads 500 and 510 and the ground potential pads 501 and 511 are electrically connected to the power supply potential lines and ground potential lines of the pixel array 20, respectively, via inter-substrate junctions (not shown). The pad group PG may also include power supply potential pads 502 and 512 for the signal processing section 650 and ground potential pads 503 and 513 for the signal processing section 650. In this example, the signal processing section 650 has one type of power supply potential line and one type of ground potential line; however, two or more types of power supply potential lines and ground potential lines may be provided. As a result, for example, different power supply potential lines and ground potential lines may be assigned to the current supply circuit 40, the comparator 60, and the first memory 70.

[0040] The pad group PG may also include a power supply potential pad 504 for the output section 100 and a ground potential pad 505 for the output section 100. The pad group PG may also include a pair of output pads 506 and 507 and another pair of output pads 508 and 509. When two pairs of output pads are provided for the output section 100 as in this example, two transmitters 210 are provided within the output section 100. When each of the output sections 100a to 100b has two transmitters 210, a total of eight pairs of output pads are provided. Note that this is merely an example, and any number of output pads, such as 12 pairs, 16 pairs, or 20 pairs, may be provided.

[0041] 11 and 12, a semiconductor chip includes a plurality of output pads 500-512 that are driven by output sections 100a-100b, and the plurality of output pads 500-512 are arranged along at least one side of the semiconductor chip. Furthermore, at least one of power supply potential pads 502, 512 and ground potential pads 503, 513 for signal processing sections 650a-650d, and a plurality of output pads 506, 507, 508, 509 are arranged along at least one side of the semiconductor chip. Here, the at least one side may be a long side of the semiconductor chip.

[0042] 11 and 12, the signal processing units 650a-650b include a signal processing unit (e.g., signal processing unit 650a) constituting a first signal processing unit group and a signal processing unit (e.g., signal processing unit 650d) constituting a second signal processing unit group. Furthermore, the output units 100a-100d include a first output unit (e.g., output unit 100a) provided for the first signal processing unit group and a second output unit (e.g., output unit 100d) provided for the second signal processing unit group. The output pads provided on the semiconductor chip SCP include a first output pad group (e.g., PGa) provided for the first output unit and a second output pad group (e.g., PGd) provided for the second output unit. The first and second output pad groups are arranged along at least one side of the semiconductor chip SCP.

[0043] In the examples of FIGS. 11 and 12, pad groups PGa and PGd (plurality of output pads) for output units 100a and 100d and pad groups PGb and PGc (plurality of output pads) for output units 100b and 100c are dispersedly arranged along two opposite sides of the semiconductor chip. At least one of power supply potential pads 502 and 512 and ground potential pads 503 and 513 for signal processing units 650a and 650d and multiple output pads 506, 507, 508, and 509 are arranged along one of the two opposite sides of the semiconductor chip. At least one of power supply potential pads 502 and 512 and ground potential pads 503 and 513 for signal processing units 650c and 650b and multiple output pads 506, 507, 508, and 509 are arranged along the other of the two opposite sides of the semiconductor chip. Here, these two opposite sides may be the long sides of the semiconductor chip.

[0044] In the examples of FIGS. 11 and 12, the signal processing units 650a-650d include a signal processing unit (e.g., signal processing unit 650a) constituting a first signal processing unit group and a signal processing unit (e.g., signal processing unit 650b) constituting a second signal processing unit group. Furthermore, the output units 100a-100d include a first output unit (e.g., output unit 100a) provided for the first signal processing unit group and a second output unit (e.g., output unit 100b) provided for the second signal processing unit group. The output pads provided on the semiconductor chip SCP include a first output pad group (e.g., PGa) provided for the first output unit and a second output pad group (e.g., PGb) provided for the second output circuit group. The first output pad group is arranged along one of two opposite sides of the semiconductor chip, and the second output pad group is arranged along the other of the two opposite sides.

[0045] 11 and 12, power supply potential pads 502 and 512 and ground potential pads 503 and 513 are provided for at least one of the pixel array 20 and the signal processing units 650a to 650d. Also, in the examples of FIGS. 11 and 12, a power supply potential pad 504 and a ground potential pad 505 are provided for the output units 100 to 103. The power supply potential pad 504 can be provided independently of the power supply potential pads 502 and 512. The ground potential pad 505 can be provided independently of the ground potential pads 503 and 513.

[0046] In the first embodiment, the total number of output pads is reduced by providing output units 100-103 capable of outputting four amplitude values. Furthermore, the number of output pads per region is reduced by distributing the output units 100-103 across multiple regions. For example, without distribution, eight pairs of output pads would be provided per region. In the example of FIG. 12, the number of output pads 506-509 per region can be reduced to two pairs. This reduces the region in which power supply potential pads and ground potential pads for the pixel array 20 and signal processing units (e.g., AD conversion units) 650a-650d cannot be disposed. This is advantageous for suppressing a local increase in resistance of the power supply potential lines or ground potential lines in the pixel array 20 and signal processing units 650a-650d and suppressing image quality degradation due to local shading, crosstalk, and the like.

[0047] In the first embodiment, the power supply potential pad and the ground potential pad for the output section 100 and the power supply potential pad and the ground potential pad for the signal processing section 650 are arranged separately. As described with reference to FIGS. 6 to 9, the resistance between the power supply potential and the ground potential is 166 Ω in the operating states of FIGS. 6 and 7, and the resistance between the power supply potential and the ground potential is 250 Ω in the operating states of FIGS. 8 and 9. In other words, <1> , in <0> 11, the power supply potential pad and the ground potential pad for the signal processing unit 650 are arranged separately, so that deterioration of image quality caused by fluctuations in the power supply potential and ground potential of the signal processing unit 650 due to fluctuations in the current of the output unit 100 is suppressed.

[0048] 13 shows a first modification of the transmitter 210 in the photoelectric conversion device PEC of the first embodiment. In the first modification, the transmitter 210 may include, in addition to the above configuration, switches 360 and 380 and a resistor 370 arranged in series between the power supply potential line and the ground potential line. <1> =0, in <0> =0 or in <1> =1, in <0> When the value of the int is 1, the switches 360 and 380 are turned off. <1> =0, in <0> =1 or in <1> =1, in <0> When the value of the serial signal in <1> , in <0> This suppresses changes in the current consumption of the transmitter 210 in response to changes in the mix of values ​​of the transmitter 210. This suppresses fluctuations in the power supply potential and ground potential of the transmitter 210, enabling stable operation of the transmitter 210. This reduces the impact of changes in the current consumption of the transmitter 210 on the signal processing unit 650, and can suppress degradation in image quality.

[0049] 14 shows a second modification of the transmitter 210 in the photoelectric conversion device PEC of the first embodiment. In the second modification, the resistors 300, 301, 350, and 351 in the transmitter 210 of the first embodiment are replaced with current sources 700, 701, 710, and 711. With this configuration, the serial signal in <1> , in <0> This suppresses changes in the current consumption of transmitter 210 in response to changes in the mix of values. However, when using a current source, it is necessary to keep the voltage across the current source at a certain level or higher, so the configuration in Figure 13 is preferable from the perspective of reducing voltage and power consumption.

[0050] FIG. 15 illustrates a third modified example of the transmitter 210 in the photoelectric conversion device PEC of the first embodiment. In this third modified example, the output units 100a and 100b are arranged along the short sides of the semiconductor chip, and the pad groups PGa and PGb are also arranged along the short sides of the semiconductor chip. In the example illustrated in FIG. 11, the output units 100a to 100d are arranged along the long sides of the semiconductor chip, thereby suppressing changes in the characteristics of the multiple pixels 10 in the pixel array 20 in the long side direction. In addition, in the example illustrated in FIG. 11, changes in the characteristics of the multiple current supply circuits 40 and the multiple comparators 60 constituting each of the signal processing units 650a to 650d in the long side direction are suppressed. On the other hand, in the third modified example illustrated in FIG. 15, changes in the characteristics of the multiple pixels 10 in the pixel array 20 in the short side direction are suppressed, and changes in the characteristics of the row selection circuits 630 and 633 in the short side direction are also suppressed.

[0051] Further modifications will be described below. In the above example, one first vertical signal line is assigned to each pixel column, but a configuration in which multiple first vertical signal lines are assigned to each pixel column and signals from pixels in multiple rows can be read out simultaneously may also be adopted. The comparator 60 may be configured to have a capacitor or switch for auto-zero operation.

[0052] The photoelectric conversion device PEC may be configured by stacking three or more substrates, or may be configured by a single substrate. The photoelectric conversion device PEC may be a front-side illuminated type or a back-side illuminated type.

[0053] As illustrated in FIG. 21 , the photoelectric conversion device may be mounted on the same printed circuit board as the signal processing chip, thereby constituting a system. In the example illustrated in FIG. 21 , the photoelectric conversion device PEC is mounted on a printed circuit board 1020 together with the signal processing chip 1010. An image signal output from the transmitter 210 of the photoelectric conversion device PEC via output pads 250 and 251 is transmitted to the signal processing chip 1010 via inner layer wiring in the printed circuit board 1020 and can be processed by the signal processing chip 1010. In this embodiment, the transmitter 210 has a configuration that can take four amplitude values, thereby reducing the number of transmission lines. This is advantageous, for example, for miniaturizing the printed circuit board 1020 and reducing radiation noise associated with signal transmission.

[0054] It is desirable that the characteristic impedance of the transmission line match as closely as possible with the output impedance of transmitter 210. In the large amplitude output state of Figure 6, when transmitter 210 is viewed from output pad 251, resistors 350 and 351 are connected in parallel between output pad 251 and ground potential, so the combined resistance is approximately 33 Ω. Similarly, when transmitter 210 is viewed from output pad 250, resistors 300 and 301 are connected in parallel, so the combined resistance is approximately 33 Ω. Thus, in the large amplitude output state, the output impedance of transmitter 210 is approximately 33 Ω.

[0055] 8, when looking at transmitter 210 from output pad 250, resistor 301 is connected between output pad 250 and the power supply potential, and resistors 230, 231, and 351 are connected in series between output pad 250 and ground potential. This results in a parallel resistance of 200 Ω, which is the sum of resistor 301's 100 Ω and resistors 230, 231, and 351, and the combined resistance is approximately 66 Ω. Similarly, when looking at transmitter 210 from output pad 251, the combined resistance is approximately 66 Ω.

[0056] Therefore, it is desirable to set the impedance of the transmission line of the printed circuit board 1020 between 33 and 66 Ω. That is, it is desirable to set the impedance of the transmission line of the printed circuit board 1020 between the output resistance of the transmitter 210 in a large-amplitude output state and the output resistance in a small-amplitude output state. As an example, the impedance may be set to 48 Ω, which is exactly halfway between 33 Ω and 66 Ω. That is, in this example, the output resistance of the transmitter 210 is 33 Ω to 66 Ω, and the impedance of the inner layer wiring is 48 Ω. The output resistance of the transmitter 210 can be adjusted by adjusting the resistance value of the resistive element, and can be adjusted, for example, to 40 Ω for large amplitude and 60 Ω for small amplitude. Accordingly, the impedance of the transmission line can be adjusted to 50 Ω, which is the midpoint between these two values.

[0057] The photoelectric conversion device PEC may be provided with a plurality of transmitters 210 and a plurality of sets of output pads 250, 251, and the printed circuit board 1020 may be provided with a plurality of sets of transmission lines.

[0058] As illustrated in FIG. 22, the photoelectric conversion device PEC may be mounted on a printed circuit board separate from the printed circuit board on which the signal processing chip is mounted. In the example illustrated in FIG. 22, the photoelectric conversion device PEC is mounted on a sensor printed circuit board 1030, and the signal processing chip 1010 is mounted on a signal processing printed circuit board 1050. The sensor printed circuit board 1030 and the signal processing printed circuit board 1050 are connected by a flexible substrate (flex) 1040, which may constitute a system. An image signal output from the transmitter 210 of the photoelectric conversion device PEC via output pads 250 and 251 is transmitted to the signal processing chip 1010 via a transmission line in the sensor printed circuit board 1030, the flex 1040, and a transmission line in the signal processing chip printed circuit board 1050. In this embodiment, the transmitter 210 has a configuration that can take four amplitude values, which reduces the number of transmission lines as well as the number of wirings included in the flex 1040. This is advantageous for miniaturizing the flexible cable and reducing the radiation noise that accompanies signal transmission through the flexible cable. The flexible cable 1040 is merely one example of a connection part, and a coaxial cable or the like may be used instead.

[0059] The photoelectric conversion device PEC may output image signals to multiple signal processing chips, as exemplified in Fig. 23. In the example shown in Fig. 23, the photoelectric conversion device PEC is mounted on a printed circuit board 1020 together with signal processing chips 1010 and 1011, thereby constituting a system. By performing processing in parallel on the multiple signal processing chips 1010 and 1011, signal processing can be performed at high speed.

[0060] In another system, the photoelectric conversion device PEC may output an image signal to the pre-processing chip, and the pre-processing chip may output the image signal to the signal processing chip. In such a configuration, the signal transmission from the pre-processing chip to the signal processing chip may be transmission using only two amplitude values, or transmission using three or more amplitude values. An example is shown in FIGS. 24 and 25. In FIG. 24, the pre-processing chip 1060 and the signal processing chip 1010 are mounted on a signal processing printed circuit board 1050. The sensor printed circuit board 1030 and the signal processing printed circuit board 1050 may be connected by a flexible substrate 1040. The pre-processing chip 1060 receives the image signal transmitted from the photoelectric conversion device PEC via the flexible substrate 1040 and then outputs the image signal to the signal processing chip 1010. The pre-processing chip 1060 may have a transmitter (second output unit) that transmits using two amplitude values, as illustrated in FIG. 25, to output the image signal to the signal processing chip 1010. The transmitter illustrated in FIG. 25 may include resistors 1100 and 1150, switches 1110, 1120, 1130, and 1140, and output pads 1160 and 1170. The signal processing chip 1010 may include a resistor 1180 connecting the output pads 1160 and 1170. A positive output amplitude is obtained when the switches 1120 and 1130 are turned on and the switches 1110 and 1140 are turned off, and a negative output amplitude is obtained when the switches 1120 and 1130 are turned off and the switches 1110 and 1140 are turned on. In other words, the transmitter illustrated in FIG. 25 has a configuration for transmitting signals using two amplitude values. In this way, the configuration for transmitting signals from the photoelectric conversion device PEC to the preprocessing chip 1060 using three or more amplitude values ​​and transmitting signals from the preprocessing chip 1060 to the signal processing chip 1010 using only two amplitude values ​​has the following advantages. First, as described above, it is possible to miniaturize the flexible substrate and reduce radiation noise associated with signal transmission through the flexible substrate. In addition, by outputting signals to the signal processing chip 1010 with only two amplitude values, it is possible to select the signal processing chip 1010 from a wider range of chips. The pre-processing chip 1060 may perform processing such as rearranging data.Again, the signal processing chip 1010 can be selected from a wider range of chips. The pre-processing chip 1060 can be configured, for example, as an FPGA (Field-Programmable Gate Array) or an ASIC (Application Specific Integrated Circuit).

[0061] The photoelectric conversion device PEC may have a transmitter (second output unit) that can output a smaller number of amplitude values ​​in addition to a transmitter that outputs an amplitude value selected from three or more amplitude values. The photoelectric conversion device PEC may also have a transmitter that can output two amplitude values, as illustrated in FIG. 25. For example, a clock that is a reference for the operation of the photoelectric conversion device PEC may be output from the transmitter. By transmitting the clock in addition to image data from the photoelectric conversion device PEC to the signal processing chip 1010, the signal processing chip 1010 can know the timing that is the reference for the image data, making it easier to acquire data. Furthermore, by using the transmitter illustrated in FIG. 25 to output the clock, it is possible to reduce the number of elements and power consumption compared to using the transmitters described with reference to FIGS. 3 to 8.

[0062] Furthermore, the photoelectric conversion device PEC may operate a transmitter that outputs an amplitude value selected from three or more amplitude values ​​in an operation mode in which a fewer number of amplitude values ​​are possible. For example, while a transmitter that can output four amplitude values ​​is described as an example in FIGS. 3 to 8, in FIG. 3, parallel-serial converter 200 and 1-bit transmitter 220 may be constantly in an inactive state, and parallel-serial converter 201 and 1-bit transmitter 221 may be used to perform an output operation in which two amplitude values ​​are possible. This makes it possible to reduce the power consumption during operation in a mode in which the output data rate is low, for example.

[0063] FIG. 16 schematically illustrates the configuration of a light-emitting device IEA according to a second embodiment. The light-emitting device IEA may be configured as, for example, a display device, a lighting device, or a light source. In the example illustrated in FIG. 16, the light-emitting device IEA is configured as a display device. The light-emitting device IEA may include a receiver 960, a converter 950, and a light-emitting unit array (pixel array) 910. The receiver 960 may receive an amplitude-modulated signal having an amplitude value selected from three or more amplitude values ​​(e.g., 4, 6, 8, etc.). The converter 950 may convert the amplitude-modulated signal received by the receiver 960 into a digital signal (binary signal). This is advantageous for widening the angle of transmission of signals from an external device to the light-emitting device IEA.

[0064] The light-emitting unit array 910 may have a plurality of light-emitting units (pixels) 911, each of which has its light emission controlled based on the digital signal converted by the conversion unit 950. The plurality of light-emitting units 911 of the light-emitting unit array 910 may be arranged to form a plurality of rows and a plurality of columns.

[0065] The light emitting device IEA may also include a vertical scanning circuit 920, a control circuit 930, and a signal output unit 940. The vertical scanning circuit 920 may be configured to select multiple rows of the light emitting unit array 910 in a predetermined order. This selection may be performed by setting multiple scanning lines 921 provided in the multiple rows to an active level. The control circuit 930 may control the vertical scanning circuit 920, the control circuit 930, the signal output unit 940, the conversion unit 950, and the receiving unit 960. The signal output unit 940 may include a column driver circuit 941, a column DAC circuit 942, and a horizontal scanning circuit 943. The column DAC circuit 942 includes multiple column DACs (DA converters), each of which captures a digital signal supplied from the conversion unit 950 in accordance with a control signal from the horizontal scanning circuit 943 and converts it into an analog signal. The column driver circuit 941 includes a plurality of column drivers corresponding to a plurality of column DACs, and each column driver drives a column signal line 912 in accordance with an analog signal supplied from the corresponding column DAC, and provides the signal to the light-emitting section 911 of the row selected by the vertical scanning circuit 920.

[0066] 17 shows an example of the configuration of a light-emitting unit (pixel) 911. The light-emitting unit 911 may include a light-emitting element (e.g., an organic light-emitting element) 971, a driving transistor 972, a writing transistor 9783, a light-emitting control transistor 974, a first capacitor 975, and a second capacitor 976. Note that the total number of transistors and capacitors and the combination of transistor conductivity types are merely examples and do not limit the present invention. In the following, a description that a transistor is connected between element A and element B may mean that one of the source or drain of the transistor is connected to one of element A and element B, and the other of the source or drain of the transistor is connected to the other of element A and element B.

[0067] One of the source and drain of the driving transistor 972 may be connected to a first electrode of the light-emitting element 971. The first electrode may be, for example, an anode. The second electrode of the light-emitting element 971 may be connected to a first power supply potential 977 (hereinafter, Vss). The second electrode may be, for example, a cathode. One of the source and drain of the writing transistor 973 may be connected to the gate of the driving transistor 972, and the other of the source and drain of the writing transistor 973 may be connected to a column signal line 912. The gate of the writing transistor 973 may be connected to a first scanning line 921a. Furthermore, one of the source and drain of the light-emitting control transistor 974 may be connected to the other of the source and drain of the driving transistor 972. The other of the light-emitting control transistor 974 may be connected to a second power supply potential 977 (hereinafter, Vdd). The gate of the light-emitting control transistor 974 may be connected to a second scanning line 921b.

[0068] 2, the light emitting unit 911 is configured by a P-type transistor, the drain of the drive transistor 972 is connected to the anode of the light emitting element 971, and the drain of the light emitting control transistor 974 is connected to the source of the drive transistor 972. In addition, the cathode of the light emitting element 971 is connected to Vss.

[0069] Here, Vdd 978 is applied to the back gate of each transistor. The first capacitance element 205 can be connected between the gate and source of the driving transistor 972. The second capacitance element 206 can be connected between the source of the driving transistor 972 and Vdd 978.

[0070] The driving transistor 972 supplies a current from Vdd 978 to the light emitting element 971 via the light emitting control transistor 974, causing the light emitting element 971 to emit light. More specifically, the driving transistor 972 supplies a current according to the signal voltage held in the first capacitance element 975 from Vdd 978 to the light emitting element 971. This allows the light emitting element 971 to emit light by current driving.

[0071] The write transistor 973 is rendered conductive in response to a write signal applied to its gate from the vertical scanning circuit 920 through the first scanning line 921a. This causes the write transistor 973 to sample the signal voltage or reference voltage of the video signal according to the luminance signal or reference signal supplied from the signal output unit 940 through the column signal line 912, and write it to the light emitting unit 911. This written signal voltage or reference voltage is applied to the gate of the drive transistor 972 and is held in the first capacitance element 975.

[0072] The light emission control transistor 974 can control the supply of current from Vdd 978 to the drive transistor 972 by becoming conductive or non-conductive in response to a light emission control signal applied to its gate from the vertical scanning circuit 920 via the second scanning line 921b. This allows the light emitting element 971 to emit light by the drive transistor 972, as described above. In other words, the light emission control transistor 974 functions as a transistor that controls whether the light emitting element 971 emits light or not.

[0073] In this way, a period (non-light emitting period) in which the light emitting element 971 is in a non-light emitting state is provided by the switching operation of the light emitting control transistor 974, and it is possible to control the ratio between the light emitting period and the non-light emitting period of the light emitting element 971 (so-called duty control). This duty control can reduce afterimages caused by the light emitting element 971 emitting light over one frame period, and can improve the image quality, particularly of moving images.

[0074] The light emitting device IEA changes the amount of current flowing through the drive transistor 972 in accordance with the luminance of a video signal when the organic EL (organic electroluminescent) element, which is the light emitting element 971, emits light. To achieve this, the capacitance between the first and second electrodes of the light emitting element 971 is charged to a predetermined potential, and a current corresponding to the potential difference flows. This causes the light emitting element 971 to emit light at a predetermined luminance.

[0075] Hereinafter, an embodiment of a photoelectric conversion system using the photoelectric conversion device PEC of the first embodiment will be described.

[0076] FIG. 18 is a block diagram showing the configuration of a photoelectric conversion system 1200 according to this embodiment. The photoelectric conversion system 1200 according to this embodiment includes a photoelectric conversion device 1215. Here, the photoelectric conversion device 1215 may be the photoelectric conversion device PEC described in the first embodiment. The photoelectric conversion system 1200 can be used, for example, as an imaging system. Specific examples of imaging systems include a digital still camera, a digital camcorder, and a surveillance camera. FIG. 18 shows an example of a digital still camera as the photoelectric conversion system 1200.

[0077] 18 includes a photoelectric conversion device 1215, a lens 1213 that forms an optical image of a subject on the photoelectric conversion device 1215, an aperture 1214 that adjusts the amount of light passing through the lens 1213, and a barrier 1212 that protects the lens 1213. The lens 1213 and the aperture 1214 form an optical system that focuses light on the photoelectric conversion device 1215.

[0078] The photoelectric conversion system 1200 includes a signal processing unit 1216 that processes an output signal output from a photoelectric conversion device 1215. The signal processing unit 1216 performs signal processing operations, performing various corrections and compression on an input signal as necessary and outputting the signal. The photoelectric conversion system 1200 also includes a buffer memory unit 1206 for temporarily storing image data and an external interface unit (external I / F unit) 1209 for communicating with an external computer or the like. The photoelectric conversion system 1200 also includes a recording medium 1211 such as a semiconductor memory for recording or reading image data, and a recording medium control interface unit (recording medium control I / F unit) 1210 for recording or reading data from the recording medium 1211. The recording medium 1211 may be built into the photoelectric conversion system 1200 or may be removable. Communication between the recording medium control I / F unit 1210 and the recording medium 1211 and communication from the external I / F unit 1209 may be performed wirelessly.

[0079] The photoelectric conversion system 1200 further includes an overall control and calculation unit 1208 that performs various calculations and controls the entire digital still camera, and a timing generation unit 1217 that outputs various timing signals to the photoelectric conversion device 1215 and the signal processing unit 1216. Here, timing signals and the like may be input from an external source, and the photoelectric conversion system 1200 only needs to include at least the photoelectric conversion device 1215 and the signal processing unit 1216 that processes the output signal output from the photoelectric conversion device 1215. As explained in the fourth embodiment, the timing generation unit 1217 may be mounted on the photoelectric conversion device. The overall control and calculation unit 1208 and the timing generation unit 1217 may be configured to perform some or all of the control functions of the photoelectric conversion device 1215.

[0080] The photoelectric conversion device 1215 outputs an image signal to the signal processing unit 1216. The signal processing unit 1216 performs predetermined signal processing on the image signal output from the photoelectric conversion device 1215 and outputs image data. The signal processing unit 1216 also generates an image using the image signal. The signal processing unit 1216 may also perform distance measurement calculations on the signal output from the photoelectric conversion device 1215. The signal processing unit 1216 and the timing generating unit 1217 may be mounted on the photoelectric conversion device. That is, the signal processing unit 1216 and the timing generating unit 1217 may be provided on the substrate on which the pixels are arranged, or may be provided on a separate substrate. By configuring an imaging system using the photoelectric conversion device of each of the above-described embodiments, an imaging system capable of acquiring higher quality images can be realized.

[0081] The photoelectric conversion system and mobile body of this embodiment will be described below with reference to Fig. 19 and Fig. 20. Fig. 19 is a schematic diagram showing an example of the configuration of the photoelectric conversion system and mobile body according to this embodiment. Fig. 20 is a flow diagram showing the operation of the photoelectric conversion system according to this embodiment. In this embodiment, an example of an in-vehicle camera is shown as the photoelectric conversion system.

[0082] FIG. 19 shows an example of a vehicle system and a photoelectric conversion system mounted thereon that performs imaging. The photoelectric conversion system 1301 includes a photoelectric conversion device 1302, an image preprocessing unit 1315, an integrated circuit 1303, and an optical system 1314. The optical system 1314 forms an optical image of a subject on the photoelectric conversion device 1302. The photoelectric conversion device 1302 converts the optical image of the subject formed by the optical system 1314 into an electrical signal. The photoelectric conversion device 1302 is any one of the photoelectric conversion devices according to the above-described embodiments. The image preprocessing unit 1315 performs predetermined signal processing on the signal output from the photoelectric conversion device 1302. The function of the image preprocessing unit 1315 may be incorporated into the photoelectric conversion device 1302. The photoelectric conversion system 1301 is provided with at least two sets of an optical system 1314, a photoelectric conversion device 1302, and an image pre-processing unit 1315, and the output from each set of image pre-processing unit 1315 is input to the integrated circuit 1303.

[0083] The integrated circuit 1303 is an integrated circuit for use in an imaging system, and includes an image processing unit 1304 including a memory 1305, an optical distance measurement unit 1306, a distance measurement calculation unit 1307, an object recognition unit 1308, and an abnormality detection unit 1309. The image processing unit 1304 performs image processing such as development and defect correction on the output signal of the image pre-processing unit 1315. The memory 1305 temporarily stores captured images and stores the positions of defects in the captured pixels. The optical distance measurement unit 1306 focuses on the subject and measures the distance. The distance measurement calculation unit 1307 calculates distance information from multiple image data acquired by multiple photoelectric conversion devices 1302. The object recognition unit 1308 recognizes subjects such as cars, roads, signs, and people. If the abnormality detection unit 1309 detects an abnormality in the photoelectric conversion device 1302, it notifies the main control unit 1313 of the abnormality.

[0084] The integrated circuit 1303 may be realized by dedicated hardware, a software module, or a combination thereof. It may also be realized by an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), or the like, or a combination thereof.

[0085] The main control unit 1313 supervises and controls the operations of the photoelectric conversion system 1301, the vehicle sensor 1310, the control unit 1320, etc. It is also possible to adopt a method in which the main control unit 1313 is not provided, and the photoelectric conversion system 1301, the vehicle sensor 1310, and the control unit 1320 each have their own communication interface and send and receive control signals via a communication network (for example, CAN standard).

[0086] The integrated circuit 1303 has a function of receiving a control signal from the main control unit 1313 or transmitting a control signal or a set value to the photoelectric conversion device 1302 by its own control unit.

[0087] The photoelectric conversion system 1301 is connected to a vehicle sensor 1310 and can detect the vehicle's driving conditions, such as vehicle speed, yaw rate, and steering angle, as well as the conditions of the environment outside the vehicle and other vehicles and obstacles. The vehicle sensor 1310 also serves as a distance information acquisition means for acquiring distance information to an object. The photoelectric conversion system 1301 is also connected to a driving assistance control unit 1311 that performs various driving assistance functions, such as automatic steering, automatic cruising, and collision prevention functions. In particular, the collision determination function determines whether or not a collision with another vehicle or obstacle has occurred based on the detection results of the photoelectric conversion system 1301 and the vehicle sensor 1310. This allows for avoidance control when a collision is predicted, and activation of safety devices in the event of a collision.

[0088] The photoelectric conversion system 1301 is also connected to an alarm device 1312 that issues an alarm to the driver based on the determination result of the collision determination unit. For example, if the collision determination unit determines that there is a high possibility of a collision, the main control unit 1313 performs vehicle control to avoid the collision and mitigate damage by applying the brakes, releasing the accelerator, suppressing engine output, etc. The alarm device 1312 warns the user by sounding an alarm or the like, displaying alarm information on a display screen of a car navigation system or meter panel, vibrating the seat belt or steering wheel, etc.

[0089] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0090] 20: pixel array, CC: column circuit (circuit including AD conversion unit), 100: output unit

Claims

1. a pixel array having a plurality of pixels; a signal processing unit including an AD conversion unit that converts an analog signal output from the pixel array into a digital signal; an output unit including a signal generating circuit that generates an amplitude modulated signal having an amplitude value selected from three or more amplitude values ​​based on the signal output from the signal processing unit, a first power supply potential line and a second power supply potential line to which a power supply potential having a value different from that of the first power supply potential line is applied are connected to the output section; the output section includes a current path having a first switch connected to the first power supply potential line, a second switch connected to the second power supply potential line, and a resistive element connected to the first switch and the second switch; The on / off state of the first switch and the on / off state of the second switch are changed in response to the selected amplitude value, changing the power consumption of the current path in a direction opposite to a direction of change in power consumption of the signal generating circuit caused by the change in the amplitude value; A photoelectric conversion device characterized by:

2. a first power supply potential pad for the signal processing section; a second power supply potential pad for the output section; Equipped with the first power supply potential pad and the second power supply potential pad are provided separately; 2. The photoelectric conversion device according to claim 1.

3. the output unit outputs the amplitude-modulated signal based on the values ​​of signals of the same bit of two digital signals output from the signal processing unit for two pixels among the plurality of pixels.

2. The photoelectric conversion device according to claim 1.

4. a plurality of output pads arranged on the semiconductor chip to be driven by the output section; the plurality of output pads are arranged along at least one side of the semiconductor chip; 2. The photoelectric conversion device according to claim 1.

5. at least one of a power supply potential pad and a ground potential pad for the AD conversion unit and the plurality of output pads are arranged along the at least one side; 5. The photoelectric conversion device according to claim 4.

6. the at least one side is a long side of the semiconductor chip; 5. The photoelectric conversion device according to claim 4.

7. the signal processing unit includes a first signal processing unit group and a second signal processing unit group; the output unit includes a first output unit provided for the first signal processing unit group and a second output unit provided for the second signal processing unit group; the plurality of output pads include a first output pad group provided for the first output section and a second output pad group provided for the second output section; the first output pad group and the second output pad group are arranged along the at least one side; 5. The photoelectric conversion device according to claim 4.

8. a plurality of output pads arranged on the semiconductor chip to be driven by the output section; the plurality of output pads are distributed and arranged along two opposite sides of the semiconductor chip; 2. The photoelectric conversion device according to claim 1.

9. at least one of a plurality of power supply potential pads and a plurality of ground potential pads for the signal processing section and at least one of the plurality of output pads are arranged along each of the two opposite sides; 9. The photoelectric conversion device according to claim 8.

10. The two opposite sides are the long sides of the semiconductor chip.

9. The photoelectric conversion device according to claim 8.

11. the signal processing unit includes a first signal processing unit group and a second signal processing unit group; the output unit includes a first output unit provided for the first signal processing unit group and a second output unit provided for the second signal processing unit group; the plurality of output pads include a first output pad group provided for the first output section and a second output pad group provided for the second output section; the first output pad group is arranged along one of the two opposite sides, and the second output pad group is arranged along the other of the two opposite sides; 9. The photoelectric conversion device according to claim 8.

12. at least one of a power supply potential pad and a ground potential pad for the output unit is provided separately from at least one of a power supply potential pad and a ground potential pad for at least one of the pixel array and the signal processing unit; 2. The photoelectric conversion device according to claim 1.

13. Parallel signals are output from the signal processing unit, the output unit includes a parallel-serial converter that converts the parallel signal output from the signal processing unit into a serial signal, and a transmitter that generates the amplitude modulated signal based on the serial signal output from the parallel-serial converter.

2. The photoelectric conversion device according to claim 1.

14. the output unit includes a voltage divider circuit capable of changing a voltage division ratio, and generates the amplitude modulated signal by changing the voltage division ratio of the voltage divider circuit.

14. The photoelectric conversion device according to claim 13.

15. the output unit further includes a decoder that generates a signal for controlling the voltage divider circuit based on the serial signal.

15. The photoelectric conversion device according to claim 14.

16. The photoelectric conversion device according to any one of claims 1 to 15, a signal processing unit that processes a signal output from the photoelectric conversion device; A photoelectric conversion system comprising:

17. The photoelectric conversion device according to any one of claims 1 to 15, a distance information acquisition means for acquiring distance information to an object from distance measurement information based on a signal from the photoelectric conversion device, A moving body further comprising a control means for controlling the moving body based on the distance information.

18. The photoelectric conversion device according to any one of claims 1 to 15, a signal processing chip that receives and processes an image signal output from the output unit of the photoelectric conversion device, A system characterized in that the photoelectric conversion device and the signal processing chip are mounted on a single substrate.

19. a first substrate on which the photoelectric conversion device according to any one of claims 1 to 15 is mounted; a second substrate on which a signal processing chip is mounted that receives and processes an image signal output from the output unit of the photoelectric conversion device mounted on the first substrate; A system comprising:

20. The photoelectric conversion device according to any one of claims 1 to 15, a plurality of signal processing chips that receive and process image signals output from the output unit of the photoelectric conversion device, A system characterized in that the photoelectric conversion device and the plurality of signal processing chips are mounted on a single substrate.

21. The photoelectric conversion device according to any one of claims 1 to 15, a pre-processing chip that receives and processes the image signal output from the output unit of the photoelectric conversion device; a signal processing chip for processing the signal output from the pre-processing chip; A system comprising:

22. the number of amplitude values ​​that the amplitude-modulated signal output from the pre-processing chip can have is smaller than the number of amplitude values ​​that the amplitude-modulated signal output from the output unit can have; 22. The system of claim 21.

23. a second output unit that outputs a signal based on the signal output from the signal processing unit; the number of amplitude values ​​that the signal output from the second output section can have is smaller than the number of amplitude values ​​that the amplitude-modulated signal output from the output section can have; 2. The photoelectric conversion device according to claim 1.

24. The output unit In a first operation mode, the amplitude modulated signal is output having an amplitude value selected from three or more amplitude values; In the second operation mode, an amplitude-modulated signal that can have a number of amplitude values ​​that is smaller than the number of amplitude values ​​that the amplitude-modulated signal output from the output section can have in the first operation mode is output.

2. The photoelectric conversion device according to claim 1.

Images