Particle measurement device, three-dimensional shape measurement device, prober device, particle measurement system, and particle measurement method

Abstract

To provide a particle measuring device capable of managing a particle generation amount, a three-dimensional shape measuring device, a prober device, a particle measuring system, and a particle measuring method.SOLUTION: A particle measuring device includes: an unevenness calculation unit 254 for calculating a volume VMR of a recess depressed from a pad reference surface R in an electrode pad P based on pad surface shape data indicating a surface shape of the electrode pad P including a probe needle trace in contact with a probe needle 141 and a volume VMP of a projecting portion projecting from the pad reference surface R; and a particle generation amount calculation unit 255 for calculating a particle generation amount from volume difference between the volume VMR of the recessed portion and the volume VMP of the projecting portion.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a technique for measuring the amount of particles generated when inspecting the electrical characteristics of a plurality of semiconductor chips formed on a semiconductor wafer. [Background technology]

[0002] The semiconductor manufacturing process involves many steps, and various inspections are performed at each step to ensure quality and improve yield. For example, wafer-level inspection is performed after multiple semiconductor chips (hereinafter referred to as chips) are formed on a semiconductor wafer (hereinafter referred to as wafer).

[0003] Wafer-level testing is performed using a prober device that brings numerous needle-shaped probes (hereinafter referred to as probe needles) formed on a probe card into contact with the electrode pads of each chip. The probe needles are electrically connected to terminals of a test head, and the test head supplies power and test signals to each chip via the probe needles, and the test head detects output signals from each chip to measure whether they are operating normally.

[0004] After such wafer-level inspection is performed, a technique has been disclosed in which the needle marks formed on the electrode pads are imaged by a camera and the needle marks on the electrode pads are detected from the image in order to determine whether the probe needles have made normal contact with the electrode pads (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-289818 Summary of the Invention [Problem to be solved by the invention]

[0006] In a prober device, when a probe needle contacts an electrode pad, the probe needle may scrape off part of the surface of the electrode pad, generating particles (fine particles). These particles include oxide films and metal films formed on the surface of the electrode pad. If particles remain on the wafer, they can cause circuit malfunctions. Particles may also adhere to the tip of the probe needle, adversely affecting the measurement of electrical characteristics using the probe needle.

[0007] Therefore, in conventional prober devices, in order to reduce the impact of particles generated when the probe needle contacts the electrode pad, the number of probing operations (number of times the probe needle contacts) is counted, and when the number of probing operations reaches a certain number or when the results of the wafer-level inspection deteriorate, the inside of the prober device or the tips of the probe needles are cleaned.

[0008] However, the amount of particles generated by a prober depends on the kinematic conditions during the probing operation (for example, the amount of overdrive of the probe needle), and the number of probing operations has little correlation with the actual amount of particles generated. This leads to problems such as time wasted due to unnecessary cleaning and insufficient cleaning. Furthermore, cleaning after the results of wafer-level inspection have deteriorated is too late, which can lead to reduced inspection efficiency.

[0009] The technology disclosed in Patent Document 1 is merely a technology for detecting needle marks on an electrode pad to determine whether or not a probe needle has made normal contact with the electrode pad, and it is difficult to grasp the generation status of particles in a prober device.

[0010] The present invention has been made in view of the above circumstances, and has as its object to provide a particle measurement device, a three-dimensional shape measuring device, a prober device, a particle measurement system, and a particle measurement method that are capable of grasping the generation status of particles caused by a probe needle contacting an electrode pad on a wafer. [Means for solving the problem]

[0011] To solve the above problems, one aspect of the present invention provides a particle measurement device that measures particles generated when a probe needle contacts an electrode pad on a wafer to inspect the electrical characteristics of the wafer. The particle measurement device includes an acquisition unit that acquires pad surface shape data indicating the surface shape of the electrode pad, including a probe needle mark formed by the probe needle contact; a detection unit that detects a pad reference surface on the surface of the electrode pad, which serves as a reference for particle measurement, based on the pad surface shape data acquired by the acquisition unit; an asperity calculation unit that calculates the volume of recesses recessed from the reference surface and the volume of protrusions protruding from the pad reference surface, based on the pad surface shape data acquired by the acquisition unit; and a particle generation amount calculation unit that calculates the particle generation amount from the volume difference between the volume of the recesses and the volume of the protrusions calculated by the asperity calculation unit. This makes it possible to grasp the generation status of particles generated when the probe needle contacts the electrode pad.

[0012] Preferably, the particle measuring device further includes a first integrating unit that integrates the particle generation amounts calculated by the particle generation amount calculating unit for each of a plurality of electrode pads included on the wafer, and a first output unit that outputs information (warning) indicating the possibility of an abnormality occurring in the inspection results based on a result of comparing the particle integrated value integrated by the first integrating unit with a first threshold value.

[0013] The particle measurement device quantitatively manages the amount of particles generated and outputs a warning if there is a possibility of an abnormality in the inspection results, allowing the operator to properly clean wafers that require cleaning, ultimately improving the efficiency of the semiconductor manufacturing process.

[0014] Preferably, the particle measuring device further includes a second integrating unit that integrates the amount of particles generated for each prober device that inspects the electrical characteristics of the wafer, and a second output unit that outputs information indicating prober devices that may cause abnormalities in the inspection results based on the result of comparing the particle integration value integrated for each prober device by the second integrating unit with a second threshold.

[0015] The particle measurement device quantitatively manages the amount of particles generated for each prober device and outputs a warning for prober devices that may cause abnormalities in the inspection results, allowing the operator to properly clean prober devices or probe needles that need cleaning, thereby improving the efficiency of the semiconductor manufacturing process.

[0016] Preferably, the particle measuring device further includes a third accumulator that accumulates the amount of particles generated for each probe card used to inspect the electrical characteristics of the wafer, and a third output unit that outputs information indicating probe cards that may cause abnormalities in the inspection results based on the result of comparing the particle accumulation value accumulated for each probe card by the third accumulator with a third threshold.

[0017] The particle measurement device quantitatively manages the particle generation amount for each probe card and outputs a warning for probe cards that may cause abnormalities in the test results, allowing the operator to properly replace probe cards that need to be replaced, thereby improving the efficiency of the semiconductor manufacturing process.

[0018] Preferably, the particle measuring device further includes a fourth integrating unit that integrates the amount of particles generated for each probe needle of a probe card used to inspect the electrical characteristics of the wafer, and a fourth output unit that outputs information indicating probe needles that may cause abnormalities in the inspection results based on the result of comparing the particle integrated value integrated for each probe needle by the fourth integrating unit with a fourth threshold.

[0019] The particle measurement device quantitatively manages the amount of particles generated for each probe needle and outputs a warning for probe needles that may cause abnormalities in the test results, allowing the operator to properly clean the probe needles that need cleaning when cleaning the probe card. The efficient cleaning of the probe card further improves the efficiency of the semiconductor manufacturing process.

[0020] Preferably, the three-dimensional shape measuring device comprises a non-contact three-dimensional measurement unit that creates pad surface shape data that indicates the surface shape of the electrode pad including the probe needle mark where the probe needle contacts, and a particle measuring device according to each embodiment of the present invention.

[0021] Preferably, the prober device includes a non-contact three-dimensional measurement unit that generates pad surface shape data that indicates the surface shape of the electrode pad, including probe needle marks where the probe needles contact the pad, and a particle measurement device according to each embodiment of the present invention. By installing the particle measurement device in the prober device, it is possible to efficiently measure particles on wafers that have been inspected while they are still loaded on the prober device, without having to be transported. Furthermore, the recipe used when inspecting the wafer (various parameters such as wafer size and chip arrangement) can be carried over and used, which also makes particle measurement efficient.

[0022] Preferably, the particle measurement system includes one or more prober devices that bring probe needles into contact with electrode pads of a wafer to inspect the electrical characteristics of the wafer, a non-contact three-dimensional measuring device that creates pad surface shape data that indicates the surface shape of the electrode pad including probe needle marks where the probe needles have contacted, and a particle measurement device according to each embodiment of the present invention.

[0023] To solve the above problems, a particle measurement method according to another aspect of the present invention measures particles generated when a probe needle contacts an electrode pad of a wafer to inspect the electrical characteristics of the wafer. This particle measurement method includes: acquiring pad surface shape data indicating the surface shape of the electrode pad, including a probe needle mark formed by the probe needle contact; detecting a pad reference surface from the surface of the electrode pad based on the pad surface shape data, which serves as a reference for particle measurement; calculating, based on the pad surface shape data, the volumes of recesses recessed from the pad reference surface and the volumes of protrusions protruding from the pad reference surface in the surface shape of the electrode pad; and calculating the particle generation rate from the volume difference between the volumes of the recesses and the protrusions. This makes it possible to grasp the generation status of particles generated when the probe needle contacts the electrode pad. [Effects of the Invention]

[0024] According to the present invention, it is possible to grasp the generation status of particles that are generated when a probe needle contacts an electrode pad of a wafer in order to perform an electrical test of the wafer. [Brief explanation of the drawings]

[0025] [Figure 1] FIG. 1 is a schematic diagram of a particle measurement system according to the first embodiment. [Figure 2] FIG. 2 is a schematic configuration diagram of the prober device according to the first embodiment. [Figure 3] FIG. 3 is a schematic diagram of the three-dimensional shape measuring device according to the first embodiment. [Figure 4] FIG. 4 is a diagram illustrating the calculation principle of the particle generation amount. [Figure 5] FIG. 5 is a flowchart showing an example of a particle measurement procedure according to the first embodiment. [Figure 6] FIG. 6 is a diagram showing an example of pad surface shape data. [Figure 7]FIG. 7 is a diagram showing an example of a method for determining a needle mark area and detecting a pad reference surface. [Figure 8] FIG. 8 is a diagram showing another example of a method for detecting the pad reference surface. [Figure 9] FIG. 9 is a diagram showing another example of a method for detecting the pad reference surface. [Figure 10] FIG. 10 is a schematic diagram of a particle measurement system according to the second embodiment. [Figure 11] FIG. 11 is a schematic diagram of a prober device according to the second embodiment. [Figure 12] FIG. 12 is a schematic diagram of the particle measuring device according to the second embodiment. [Figure 13] FIG. 13 is a diagram illustrating an example of a database according to the second embodiment. [Figure 14] FIG. 14 is a flowchart showing an example of a particle measurement procedure according to the second embodiment. [Figure 15] FIG. 15 is a flowchart showing an example of a particle measurement procedure according to the second embodiment. [Figure 16] FIG. 16 is a diagram illustrating an example of a database according to the third embodiment. [Figure 17] FIG. 17 is a flowchart showing an example of a particle measurement procedure according to the third embodiment. [Figure 18] FIG. 18 is a flowchart showing an example of a particle measurement procedure according to the third embodiment. [Figure 19] FIG. 19 is a schematic diagram of a three-dimensional shape measuring apparatus according to the fourth embodiment. [Figure 20] FIG. 20 is a diagram illustrating an example of a database according to the fourth embodiment. [Figure 21] FIG. 21 is a flowchart showing an example of a particle measurement procedure according to the fourth embodiment. [Figure 22] FIG. 22 is a diagram illustrating an example of a sampling method for electrode pads. [Figure 23]FIG. 23 is a diagram illustrating another example of a sampling method for electrode pads. [Figure 24] FIG. 24 is a diagram illustrating another example of the sampling method for the electrode pads. DETAILED DESCRIPTION OF THE INVENTION

[0026] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description, the same reference numerals are used to designate parts having essentially the same configurations.

[0027] [First embodiment] First, a particle measurement device according to a first embodiment of the present invention will be described. Fig. 1 is a configuration diagram of a particle measurement system 1000 according to the first embodiment. The particle measurement system 1000 includes a prober device 100 and a three-dimensional shape measurement device (particle measurement device) 200. A transfer device (not shown) for transferring a wafer W is provided between the prober device 100 and the three-dimensional shape measurement device 200. In Fig. 1, the X, Y, and Z directions are mutually orthogonal, with the X direction being the horizontal direction, the Y direction being the horizontal direction orthogonal to the X direction, and the Z direction being the vertical direction. This also applies to the other figures described below.

[0028] 2 is a schematic diagram of the prober device 100. The prober device 100 includes a stage (including a chuck) 120, a stage moving mechanism 130, a probe card 140, a control unit 150, an operation unit 160, and a display unit 170.

[0029] The stage 120 has a holding surface (suction surface) capable of suction-holding the wafer W. The stage movement mechanism 130 supports the underside of the stage 120 (the surface opposite to the holding surface). The stage movement mechanism 130 is configured to be movable in the X, Y, and Z directions and rotatable in the θ direction (a rotational direction around the Z direction). As a result, the wafer W suction-held on the holding surface of the stage 120 can be moved in the X, Y, and Z directions and rotated in the θ direction together with the stage 120 by the stage movement mechanism 130.

[0030] The probe card 140 is provided at a position facing the stage 120 and is arranged parallel to the holding surface of the stage 120. The probe card 140 has a plurality of probe needles 141 formed on the surface facing the stage 120. Furthermore, the probe card 140 is connected to a tester main body (not shown) via a test head 180.

[0031] A plurality of chips C are formed on the wafer W, and each chip C has one or more electrode pads P. The stage 120 is moved in the X, Y, and Z directions or rotated in the θ direction by the stage movement mechanism 130, thereby aligning the wafer W with the probe card 140 so that each probe needle 141 contacts the corresponding electrode pad P.

[0032] The control unit 150 is realized by, for example, a personal computer, a workstation, a PLC (Programmable Logic Controller), etc. The control unit 150 includes a CPU (Central Processing Unit) that controls the operation of each part of the prober device 100, a ROM (Read Only Memory), a storage device (not shown) (for example, an HDD (Hard Disk Drive) or an SSD (Solid State Drive)) that stores a control program, and an SDRAM (Synchronous Dynamic Random Access Memory) that can be used as a work area for the CPU. The control unit 150 accepts operation inputs from an operator via an operation unit 160, and transmits control signals corresponding to the operation inputs to each part of the prober device 100 to control the operation of each part.

[0033] The operation unit 160 is a means for accepting operation inputs from an operator, and includes, for example, a keyboard, a mouse, or a touch panel.

[0034] The display unit 170 is a device that displays an operation GUI (Graphical User Interface) and images for operating the prober device 100. As the display unit 170, for example, a liquid crystal display can be used.

[0035] After the prober device 100 aligns and contacts the probe needles 141 with the electrode pads P, an electrical signal is sent from the tester body to the chip C via the test head 180, the probe card 140, and the probe needles 141, and the electrical characteristics of the chip C on the wafer W are inspected. The results of the electrical characteristic inspection are notified to the operator via the display unit 170.

[0036] After the inspection of the electrical characteristics of the chips C on the wafer W is completed, the wafer W is transferred from the prober device 100 to the three-dimensional shape measuring device 200 by a transfer device (not shown).

[0037] Next, the configuration of three-dimensional shape measuring apparatus 200 according to the first embodiment of the present invention will be described with reference to Fig. 3. Three-dimensional shape measuring apparatus 200 includes a stage 220, a stage movement mechanism 230, a control unit 250, an operation unit 260, a display unit 270, a non-contact three-dimensional measurement unit 280, and a storage unit 290.

[0038] The stage 220 has a holding surface (suction surface) capable of suction-holding the wafer W. The stage movement mechanism 230 supports the underside of the stage 220 (the surface opposite to the holding surface). The stage movement mechanism 230 is configured to be movable in the X, Y, and Z directions and rotatable in the θ direction (a rotation direction around the Z direction). As a result, the wafer W suction-held on the holding surface of the stage 220 can be moved in the X, Y, and Z directions and rotated in the θ direction together with the stage 220 by the stage movement mechanism 230.

[0039] After the electrical characteristics of the chip C are inspected, probe needle marks M (see FIG. 4) formed by the probe needles 141 remain on the surface of the electrode pad P. The non-contact three-dimensional measurement unit 280 non-contactly measures the three-dimensional shape of the surface of the electrode pad P, including the probe needle marks M, and stores the measurement results as pad surface shape data in the memory unit 290. Alternatively, the non-contact three-dimensional measurement unit 280 may output the pad surface shape data directly to the control unit 250.

[0040] Any measurement method can be employed by the non-contact three-dimensional measuring unit 280. Examples of measurement methods include white light interferometry, focus variation, SD-OCT (Spectral Domain Optical Coherence Tomography), FD-OCT (Fourier Domain Optical Coherence Tomography), laser confocal imaging, triangulation, light sectioning, pattern projection, and optical comb imaging.

[0041] In this embodiment, a surface profile measuring device that uses white light interferometry to perform non-contact three-dimensional measurement of the surface profile of a measurement object (electrode pad P in this example) is preferably used as non-contact three-dimensional measuring unit 280. Surface profile measuring devices that use white light interferometry use white light with a wide wavelength range (low coherence light with little coherence) as a light source and measure the three-dimensional profile of the measurement surface of the measurement object in a non-contact manner using an interferometer such as a Michelson type or Mirow type. Such surface profile measuring devices are disclosed in, for example, Japanese Patent Application Laid-Open Nos. 2016-080564 and 2016-161312, and are publicly known, so a detailed description thereof will be omitted.

[0042] The control unit 250 analyzes the pad surface shape data to calculate the amount of particles (fine particles) generated in the prober device 100. These particles are generated when the probe needles 141 scrape off part of the surface of the electrode pads P (such as an oxide film or a metal film) when the probe needles 141 contact the electrode pads P. The control unit 250 includes a three-dimensional measurement control unit 251, an acquisition unit 252, a detection unit 253, an unevenness calculation unit 254, a particle generation amount calculation unit (corresponding to the particle generation amount calculation unit and each integrating unit of the present invention) 255, and a determination unit (corresponding to each output unit of the present invention) 256. In a narrow sense, the acquisition unit 252, the detection unit 253, the unevenness calculation unit 254, the particle generation amount calculation unit 255, and the determination unit 256 correspond to the particle measuring device of the present invention. In a broad sense, the entire three-dimensional shape measuring device 200 corresponds to the particle measuring device of the present invention.

[0043] The operation unit 260 is a means for accepting operation inputs from an operator, and includes, for example, a keyboard, a mouse, or a touch panel.

[0044] The display unit 270 is a device that displays an operation GUI (Graphical User Interface) and images for operating the three-dimensional shape measuring device 200. As the display unit 270, for example, a liquid crystal display can be used.

[0045] The three-dimensional measurement control unit 251 controls three-dimensional measurement by the non-contact three-dimensional measurement unit 280. The acquisition unit 252 acquires pad surface shape data indicating the three-dimensional shape of the surface of the electrode pad P from the non-contact three-dimensional measurement unit 280 or the storage unit 290. The detection unit 253 detects a pad reference surface that serves as a reference for particle measurement based on the pad surface shape data acquired by the acquisition unit 252.

[0046] The unevenness calculation unit 254 calculates the volume of the portion recessed from the pad reference surface and the volume of the portion protruding from the pad reference surface in the surface shape of the electrode pad P based on the pad surface shape data acquired by the acquisition unit 252. Hereinafter, the portion recessed from the pad reference surface (i.e., lower in height than the pad reference surface) will be referred to as a recess, and the portion protruding from the pad reference surface (i.e., higher in height than the pad reference surface) will be referred to as a protrusion.

[0047] The particle generation amount calculation unit 255 calculates the amount of particles generated from the volume difference between the volume of the convex portion and the volume of the concave portion calculated by the unevenness calculation unit 254. The determination unit 256 integrates the amount of particles generated calculated by the particle generation amount calculation unit 255 and determines whether the integrated value exceeds a predetermined threshold value. This predetermined threshold value is a value that is set in advance and may be set, for example, at the time of shipping from the factory, or may be set or changed by the user.

[0048] The control unit 250 is realized by, for example, a personal computer, a workstation, a PLC (Programmable Logic Controller), etc. The control unit 250 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), a storage device (not shown) (for example, an HDD (Hard Disk Drive) or an SSD (Solid State Drive)) that stores a control program, and an SDRAM (Synchronous Dynamic Random Access Memory) that can be used as a work area for the CPU. The control unit 250 accepts operation inputs from an operator via an operation unit 260, and transmits control signals corresponding to the operation inputs to each part of the three-dimensional shape measuring device 200 to control the operation of each part.

[0049] The result of the determination by the determination unit 256 is output to the display unit 270. The user performs necessary processing such as cleaning the wafer W, the prober device 100, and the probe needles 141 in accordance with the display.

[0050] [Calculation principle of particle generation amount] The principle of calculating the particle generation amount in the present invention will be described below with reference to Fig. 4. Fig. 4 schematically shows a probe needle mark M formed when the surface of a planar electrode pad P is scraped by a probe needle 141.

[0051] 4, the probe needle mark M has a convex portion MP that is higher than the pad reference surface R of the electrode pad P, and a concave portion MR that is lower than the pad reference surface R. The pad reference surface R can be detected from the average height of the area excluding the area where the probe needle mark M is located from the electrode pad P, using a method described later.

[0052] In theory, if no particles have peeled off from the electrode pad P, the volume VMR of the recessed portion MR and the volume VMP of the protruding portion MP will be the same. Therefore, in the present invention, the volume VMP of the protruding portion MP of the probe needle mark M and the volume VMR of the recessed portion MR are calculated from the three-dimensional shape of the surface of the electrode pad P, and the difference between the two is calculated as the amount of particles generated. Here, in order to accurately measure the volume VMP of the protruding portion MP and the volume VMR of the recessed portion MR, in the present invention, the three-dimensional shape of the surface of the electrode pad P including the probe needle mark M is measured in a non-contact three-dimensional measurement unit 280 in a non-contact manner.

[0053] 4 shows a cantilever-type probe needle as an example of probe needle 141, but this is not intended to limit the scope of the probe needle 141. The present invention is applicable to any type of probe needle 141. Other types of probe needle 141 include, for example, a vertical needle, which is a rod-shaped needle, and a crown needle with multiple needle tips.

[0054] 4 shows a planar electrode pad as an example of the electrode pad P, but this is not intended to limit the electrode pad P. The present invention is applicable to any type of electrode pad P. Another type of electrode pad P is, for example, a bump pad having a convex curved surface (e.g., hemispherical). When the electrode pad P is a bump pad, the volume VMP of the convex portion MP and the volume VMR of the concave portion MR can be calculated by calculating the difference from the pad reference surface R of the global shape.

[0055] [Particle measurement procedure] Next, the particle measurement procedure in the first embodiment will be described with reference to FIG. 5. First, the wafer W to be measured is loaded into the three-dimensional shape measuring apparatus 200. That is, the wafer W is placed (held by suction) on the stage 220 of the three-dimensional shape measuring apparatus 200, and the non-contact three-dimensional measuring unit 280 is positioned opposite the wafer W on the stage 220 (step S10). Next, the integrated value ΣΔV is reset (step S11). The stage 220 is moved or rotated by the stage moving mechanism 230 to position the non-contact three-dimensional measuring unit 280 and the electrode pad P to be measured. Furthermore, the three-dimensional shape of the surface of the electrode pad P is measured and digitized by the non-contact three-dimensional measuring unit 280, and pad surface shape data is created (step S12).

[0056] FIG. 6 shows an example of pad surface shape data of an electrode pad P obtained by the non-contact three-dimensional measuring unit 280. FIG. 6 shows pad surface shape data indicating a needle mark M formed on the surface of the electrode pad P substantially parallel to the XY plane. Reference numeral 6A in FIG. 6 is a graph showing the height direction position (Z-axis coordinate value) at each XY coordinate on the XY plane, with the larger the absolute value of the Z-axis coordinate value of the pixel being shaded darker. Reference numeral 6B in FIG. 6 is a graph in which the graph shown in reference numeral 6A is represented in an XYZ Cartesian coordinate system.

[0057] Next, the acquisition unit 252 of the control unit 250 acquires the pad surface shape data directly from the non-contact three-dimensional measuring unit 280 or indirectly via the storage unit 290. Based on the pad surface shape data acquired by the acquisition unit 252, the detection unit 253 of the control unit 250 detects a pad reference plane R, which serves as a reference for distinguishing between concave and convex portions, from within the surface of the electrode pad P (step S13).

[0058] More specifically, the detection unit 253 identifies a needle trace region RM (see FIG. 7) in the pad surface shape data as a region centered on a pixel having a Z-axis coordinate value that is significantly different from the Z-axis coordinate values ​​of the surrounding pixels. Next, the detection unit 253 removes the needle trace region RM from the pad surface shape data and calculates the average value (average Z-axis coordinate value) of the Z-axis coordinate values ​​of the remaining region. Then, the XY plane having this average Z-axis coordinate value is detected as the pad reference plane R.

[0059] Here, the detection unit 253 can determine the needle trace region RM using any known technology. For example, the detection unit 253 may determine, as the needle trace region RM, a rectangle that surrounds pixels whose absolute value of Z-axis coordinate value exceeds a predetermined value and pixels within a certain distance from those pixels in an XY plane graph of the pad surface shape data. More specifically, as shown in Fig. 7, for example, the detection unit 253 may determine, as the needle trace region RM, a rectangle that surrounds pixels whose absolute value of Z-axis coordinate value exceeds 10 and pixels adjacent to those pixels in the XY plane graph shown by reference numeral 6A in Fig. 6.

[0060] Further, for example, the detection unit 253 may create a histogram showing the frequency of Z-axis coordinate values ​​of pixels in the pad surface shape data, and calculate an average Z-axis coordinate value for pixels near the mode. Fig. 8 is a histogram showing the frequency of Z-axis coordinate values ​​created for the pad surface shape data shown in Fig. 7, where the horizontal axis represents the Z-axis coordinate value and the vertical axis represents the number of pixels having each Z-axis coordinate value (frequency). In the histogram shown in Fig. 8, the Z-axis coordinate value near 0 is the most frequent, so the detection unit 253 calculates the average Z-axis coordinate value for pixels whose Z-axis coordinate values ​​are between -10 and +10. Further, for example, the detection unit 253 may determine the needle trace region RM to be within a certain distance from pixels having the maximum and minimum Z-axis coordinate values.

[0061] The above describes a method for detecting the pad reference surface R when the electrode pad P has a planar shape that is approximately parallel to the XY plane. Next, a method for detecting the pad reference surface R when the electrode pad P is inclined or has a shape other than a planar shape will be described.

[0062] Figure 9 shows an example of pad surface shape data obtained when the electrode pad P is inclined with respect to the XY plane, and symbol 9A in Figure 9 is a graph showing the height position (Z-axis coordinate value) at each XY coordinate on the XY plane, similar to symbol 6A in Figure 6.

[0063] If the electrode pad P is inclined with respect to the XY plane or has a shape other than a plane, for example, the detection unit 253 first removes the needle mark region RM from the pad surface shape data using the method described with reference to Fig. 7. Next, the detection unit 253 obtains an approximate formula indicating the pad reference plane R by approximating the XYZ coordinate values ​​of the remaining region of the pad surface shape data (see reference numeral 9B in Fig. 9) using the least squares method. In the case of the graph shown by reference numeral 9B in Fig. 9, the approximation result is as follows:

[0064] Z(X,Y)=aX+bY+ca=0.2,b=1.0,c=4.2 The method for detecting the pad reference surface R is not limited to this example, and any known technique can be used.

[0065] When the pad reference surface R is detected by the detection unit 253, the unevenness calculation unit 254 of the control unit 250 calculates the volume VMP of the convex portion MP and the volume VMR of the concave portion MR for the area of ​​the electrode pad P including the needle trace area RM, based on the pad surface shape data acquired by the acquisition unit 252, using the pad reference surface R as a reference (step S14).

[0066] For example, if the electrode pad P is inclined or has a shape other than a flat shape, the unevenness calculation unit 254 can calculate the volume VMP of the convex portion MP and the volume VMR of the concave portion MR using the approximate formula "Z(X, Y) = aX + bY + c" representing the pad reference surface R calculated by the detection unit 253 and the following formulas (1) and (2).

[0067]

number

[0068]

number

[0069] If the pad reference surface R is not inclined, Z=aX+bY+c in the above equations (1) and (2) can be replaced with a constant average Z-axis coordinate value (see the explanation of step S13), and therefore equations (1) and (2) can be simplified. The equations after substitution are self-evident and therefore omitted here.

[0070] Next, the particle generation amount calculation unit 255 calculates the volume difference ΔV between the volume VMP of the convex portion MP and the volume VMR of the concave portion MR calculated by the unevenness calculation unit 254 (step S15). This volume difference ΔV corresponds to the amount of particles generated from the electrode pad P currently being measured. Furthermore, the particle generation amount calculation unit 255 adds the calculated volume difference ΔV to the integrated value ΣΔV (step S16).

[0071] Next, the particle generation amount calculation unit 255 determines whether there are any other electrode pads P to be measured (step S17). For example, the operator (or manufacturer) may register information specifying the electrode pads P to be measured in advance in the storage unit 290, and the particle generation amount calculation unit 255 makes the determination in step S17 based on this information. Alternatively, the determination in step S17 may be made based on an input by the operator each time. Alternatively, the control unit 250 may automatically determine the electrode pads P to be measured according to a predetermined rule, and the particle generation amount calculation unit 255 may make the determination in step S17 based on this determination. The determination of the electrode pads P to be measured will be described later.

[0072] If it is determined that there are other electrode pads P to be measured (step S17: NO), the process returns to step S12. If it is determined that there are no other electrode pads P to be measured (step S17: YES), the determination unit 256 determines whether the integrated value ΣΔV is greater than a predetermined first threshold value (step S18). If it is determined that the integrated value ΣΔV is equal to or less than the predetermined first threshold value (step S18: NO), the process for that wafer W ends.

[0073] If it is determined that the integrated value ΣΔV is greater than the predetermined first threshold value (step S18: YES), the determination unit 256 outputs information (hereinafter referred to as a warning) indicating the possibility that the quality of the chip C may be affected to the display unit 270 (step S19). Upon receiving the warning, the operator cleans the wafer W as necessary and ends the processing for that wafer W.

[0074] In the past, there was no method for quantitatively managing the amount of particles generated, which resulted in problems such as time wasted due to unnecessary cleaning and insufficient cleaning.

[0075] On the other hand, the three-dimensional shape measuring apparatus 200 according to the first embodiment quantitatively manages the amount of particles generated from the wafer W and outputs a warning when the amount of particles generated exceeds a predetermined threshold, allowing the operator to properly clean the wafer W that needs cleaning, thereby improving the efficiency of the semiconductor manufacturing process.

[0076] [Modification of the first embodiment] In the first embodiment, the prober device 100 and the three-dimensional shape measuring device 200 are separate entities, and a particle measurement system 1000 is configured that includes the prober device 100 and the three-dimensional shape measuring device 200. However, by adding the functions of a non-contact three-dimensional measuring unit 280 and a control unit 250 to the prober device 100, it is also possible to realize the prober device 100 and the particle measurement device in a single device.

[0077] In this case, after the inspection of the electrical characteristics of the chips C on the wafer W is completed, the stage 120 is moved by the stage moving mechanism 130 from a position facing the probe card 140 to a position facing the non-contact three-dimensional measurement unit 280 while the wafer W is still held by suction on the stage 120. Thereafter, the three-dimensional shape of the surface of the electrode pad P, including the probe needle marks M, is measured in a non-contact manner by the non-contact three-dimensional measurement unit 280. The subsequent processing is the same as in the first embodiment. Note that instead of moving the stage 120, the position of the stage 120 may be fixed, and the probe card 140, the test head 80, and the non-contact three-dimensional measurement unit 280 may be moved.

[0078] In addition to the effects achieved by the first embodiment described above, the modified example of the first embodiment has the advantage that a particle measurement device can be realized at low cost. Also, since there is no need to transport and load the wafer W from the prober device 100 to the three-dimensional shape measuring device 200, particles can be measured efficiently. Furthermore, since the recipe used when inspecting the wafer W (various parameters such as the size of the wafer W and the arrangement of the chips C) can be carried over and used, particles can be measured more efficiently than in the first embodiment.

[0079] [Second embodiment] Next, a particle measurement device according to a second embodiment of the present invention will be described. In the first embodiment, the amount of particles generated on a wafer W is managed, thereby enabling appropriate cleaning of a wafer W that requires cleaning. However, multiple prober devices may be used to inspect the electrical characteristics of chips C on multiple wafers W. In such cases, in the second embodiment, a single particle measurement device manages the amount of particles generated for each prober device, thereby enabling appropriate cleaning of a prober device that requires cleaning.

[0080] FIG. 10 is a configuration diagram of a particle measurement system 2000 according to the second embodiment. The particle measurement system 2000 includes a plurality of prober devices 2100-i (i is a natural number equal to or greater than 1) and a three-dimensional shape measurement device 2200. The three-dimensional shape measurement device 2200 and the plurality of prober devices 2100-i are connected to each other via a wired and / or wireless network N. Furthermore, a transfer device (not shown) that transfers a wafer W is provided between the three-dimensional shape measurement device 2200 and the plurality of prober devices 2100-i. Note that, although FIG. 10 shows three prober devices 2100-1, 2100-2, and 2100-3 as an example, this is not intended to limit the number of the plurality of prober devices 2100-i.

[0081] The configuration of each prober device 2100-i will be described below with reference to Fig. 11. As shown in Fig. 11, the prober device 2100-i further includes a wafer ID reading unit 300 in addition to the prober device 100 shown in Fig. 2.

[0082] Each wafer W has a wafer ID, which is information for identifying the wafer W. The wafer ID is assigned to each wafer W by, for example, printing, engraving, a one-dimensional barcode, a two-dimensional barcode, RFID, an IC tag, or the like. A wafer ID reading unit 300 is provided according to the type of wafer ID, and reads out the wafer ID assigned to each wafer W. For example, if the wafer ID is a two-dimensional barcode, the wafer ID reading unit 300 is a barcode reader. Any known technology can be used for the wafer ID and the wafer ID reading unit 300, and a description thereof will be omitted here.

[0083] Furthermore, each prober device 2100-i has a prober ID, which is information for identifying the respective prober device 2100-i.

[0084] The configuration of a three-dimensional shape measuring apparatus (particle measuring apparatus) 2200 according to the second embodiment will be described with reference to Fig. 12. As shown in Fig. 12, the configuration of the three-dimensional shape measuring apparatus 2200 is obtained by adding a wafer ID reading unit 310 to the configuration of the three-dimensional shape measuring apparatus 200 shown in Fig. 3. Since the wafer ID reading unit 310 is similar to the wafer ID reading unit 300, a description of the wafer ID reading unit 310 will be omitted.

[0085] In the second embodiment, the control unit 250 of the three-dimensional shape measuring apparatus 2200 manages the amount of particles generated for each prober apparatus 2100-i in a database. FIG. 13 shows an example of the database stored in the storage unit 290. As shown in FIG. 13, the storage unit 290 has a wafer ID database 320 and an integrated value database 330. The wafer ID database 320 stores a wafer ID that identifies a wafer W and a prober ID that identifies the prober apparatus 2100-i used to inspect the wafer W, in association with each other. The integrated value database 330 stores an integrated value ΣΔV of the amount of particles generated for each prober apparatus 2100-i.

[0086] Next, a particle measurement procedure in the second embodiment will be described with reference to Figures 14 and 15. In the second embodiment, prior to particle measurement, a wafer ID is registered. Hereinafter, the wafer ID registration procedure will be described with reference to Figure 14.

[0087] First, when each prober device 2100-i performs a probing operation, the wafer ID reading unit 300 of each prober device 2100-i reads the wafer ID from the wafer W (step S30). Next, each prober device 2100-i performs a probing operation on the wafer W, and then inspects the wafer W (step S31). After the inspection is completed, the wafer ID of the wafer W read in step S30 and the prober ID of the prober device 2100-i are transmitted to the three-dimensional shape measuring device 2200 (step S32). The three-dimensional shape measuring device 2200 associates the received wafer ID with the prober ID and stores them in the wafer ID database 320 of the storage unit 290 (step S33). This registration The procedure creates a database as shown in Figure 13.

[0088] Subsequently, the inspected wafer W is transferred by a transfer unit (not shown) to the three-dimensional shape measuring device 2200, where particle measurement is performed on the wafer W.

[0089] Next, particle measurement in the second embodiment will be described with reference to Fig. 15. As shown in Fig. 15, in the second embodiment, steps S11, S16, and S18 to S19 of the first embodiment shown in Fig. 5 are replaced with steps S34, S35, and S36 to S38, respectively. The other steps in Fig. 15 are the same as steps S12 to S15 of the first embodiment in Fig. 5, and therefore description thereof will be omitted.

[0090] First, when the wafer W is transported to the three-dimensional shape measuring device 2200 and loaded into the three-dimensional shape measuring device 2200 (step S10), the wafer ID reading unit 310 of the three-dimensional shape measuring device 2200 reads the wafer ID from the wafer W (step S34). Next, steps S12 to S15 are performed in the same manner as in the first embodiment, and the amount of particle generation ΔV is calculated.

[0091] Next, when the particle generation amount ΔV is calculated (step S15), the particle generation amount calculation unit 255 of the control unit 250 acquires the prober ID associated with the wafer ID read in step S34 from the wafer ID database 320 of the storage unit 290. Next, the particle generation amount calculation unit 255 refers to the integrated value database 330 of the storage unit 290, and adds the particle generation amount ΔV calculated in step S15 to the integrated value ΣΔV corresponding to the acquired prober ID, thereby updating the integrated value ΣΔV (step S35).

[0092] Thereafter, if it is determined that there are no other electrode pads P to be measured (step S17: YES), the determination unit 256 determines whether the integrated value ΣΔV calculated in step S35 exceeds a predetermined second threshold value (step S36).

[0093] Here, in the first embodiment, the amount of particles generated is managed for the wafer W, but in the second embodiment, the amount of particles generated is managed for each prober device 2100-i, so the second threshold value used in step S36 in the second embodiment does not necessarily match the first threshold value used in the first embodiment.

[0094] This second threshold is a value that is set in advance, similar to the first threshold. The second threshold may be set appropriately at the time of factory shipment, or may be set and changed appropriately by the user at any time. If particles accumulate in the prober device 2100-i to a certain amount or more, there is a risk of affecting the inspection of the wafer W. However, the operator (or manufacturer) can empirically know the amount of particles generated that may affect the inspection from the usage record of the prober device 2100-i. Therefore, the operator may set the second threshold based on experience.

[0095] If it is determined in step S36 that the integrated value ΣΔV exceeds the predetermined second threshold, the determination unit 256 outputs to the display unit 270 the prober ID acquired in step S35, information identifying the prober device 2100-i corresponding to the prober ID, and a warning (step S37). Upon receiving the warning, the operator cleans the prober device 2100-i as necessary. If cleaning has been performed, the determination unit 256 resets the integrated value ΣΔV corresponding to the cleaned prober device 2100-i, which is stored in the integrated value database 330 (step S38), and then terminates processing for that wafer W.

[0096] In the past, there was no method for quantitatively managing the amount of particles generated, so the prober device 2100-i that did not actually need cleaning was cleaned, or conversely, the prober device 2100-i was not cleaned enough, which reduced the efficiency of the semiconductor manufacturing process.

[0097] On the other hand, the three-dimensional shape measuring apparatus 2200 according to the second embodiment of the present invention quantitatively manages the amount of particles generated from the wafer W for each prober apparatus 2100-i, and outputs a warning to prompt cleaning of the prober apparatus 2100-i whose amount of particles generated exceeds a predetermined second threshold. This allows the operator to properly clean the prober apparatus 2100-i that needs cleaning. This ultimately makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0098] [Modification of the second embodiment] In the second embodiment, the operator who receives the warning cleans the prober device 2100-i as necessary, but the warning may be output at a different timing from that in the second embodiment by appropriately changing the second threshold value used in step S36. In a modification of the second embodiment, the second threshold value may be adjusted to a different threshold value so as to prompt the operator to clean the probe needles 141 of the probe card 140 mounted on the prober device 2100-i instead of cleaning the prober device 2100-i. According to the modification of the second embodiment, the operator can appropriately clean the probe needles 141 that need cleaning. This ultimately makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0099] [Third embodiment] In the second embodiment, the amount of particles generated for each prober device is managed to determine whether the prober device needs to be cleaned. However, multiple probe cards may be used in one prober device. In the third embodiment, the amount of particles generated for each probe card mounted on the prober device is managed, making it possible to appropriately replace the probe card.

[0100] The particle measurement system (not shown) according to the third embodiment includes the prober device 2100 and three-dimensional shape measuring device 2200 according to the second embodiment. The configurations of the prober device 2100 and the three-dimensional shape measuring device 2200 are the same as those of the second embodiment, and therefore descriptions thereof will be omitted.

[0101] In the third embodiment, each probe card 140-j (j is a natural number equal to or greater than 1) has a probe card ID, which is information for identifying the probe card. When the probe card 140-j is mounted, the prober device 2100 acquires the probe card ID of the probe card 140-j. The probe card ID is acquired, for example, by input by an operator. Alternatively, each prober device 2100-i may automatically read the probe card ID from the probe card 140-j using a reading unit (not shown) in a manner similar to that for the wafer ID described above.

[0102] 16 shows an example of a database stored in the storage unit 290 in the third embodiment. As shown in FIG. 16, in the third embodiment, the storage unit 290 has a wafer ID database 340 and an integrated value database 350. The wafer ID database 340 stores a wafer ID for identifying a wafer W and a probe card ID for identifying a probe card 140-j used when inspecting the wafer W, in association with each other. The integrated value database 350 stores an integrated value ΣΔV of the amount of particle generation for each probe card 140-j.

[0103] The particle measurement procedure in the third embodiment will be described with reference to Figures 17 and 18. As in the second embodiment, wafer IDs are registered in the third embodiment. As shown in Figure 17, the wafer ID registration procedure in the third embodiment is almost the same as the registration procedure in the second embodiment shown in Figure 14. The difference is that in the second embodiment, the prober ID is transmitted and stored in steps S32 and S33 shown in Figure 14, but in the third embodiment, the probe card ID is transmitted and stored in steps S40 and S41 shown in Figure 17. A wafer ID database 340 shown in Figure 16 is created by the registration procedure.

[0104] Subsequently, the inspected wafer W is transferred by a transfer unit (not shown) to the three-dimensional shape measuring device 2200, where particle measurement is performed on the wafer W. As shown in Fig. 18, the particle measurement procedure in the third embodiment is almost the same as the particle measurement procedure in the second embodiment shown in Fig. 15. The difference is that steps S35 to S38 in Fig. 15 are changed to steps S42 to S45 in Fig. 18.

[0105] Only the differences from the second embodiment will be described below. First, in the third embodiment, in step S42, the particle generation amount calculation unit 255 refers to the wafer ID database 340 in the storage unit 290 and acquires the probe card ID corresponding to the wafer ID read in step S34. Furthermore, the particle generation amount calculation unit 255 refers to the integrated value database 350 in the storage unit 290 and adds the particle generation amount ΔV calculated in step S15 to the integrated value ΣΔV corresponding to the acquired probe card ID, thereby updating the integrated value ΣΔV.

[0106] Thereafter, if it is determined that there are no other electrode pads P to be measured (step S17: YES), in step S43, the determination unit 256 of the control unit 250 determines whether the integrated value ΣΔV exceeds a predetermined third threshold. Here, the third threshold may be a value different from the first and second thresholds used in the first and second embodiments. The third threshold is a preset value. The third threshold may be appropriately set at the time of factory shipment, or may be appropriately set and changed by the user at any time. The probe card 140-j reaches the end of its life and needs to be replaced when particles accumulate to a certain amount or more. However, the operator (or manufacturer) can empirically know the amount of particles generated that requires replacement of the probe card 140-j based on the usage history of the probe card 140-j. For example, the operator sets the third threshold based on experience.

[0107] Furthermore, in step S44, information specifying the probe card 140-j corresponding to the probe card ID and a warning are output to the display unit 170 together with the probe card ID.

[0108] Upon receiving the warning, the operator replaces the probe card 140-j as necessary. If the probe card 140-j is replaced, in step S45, the determination unit 256 resets the integrated value ΣΔV corresponding to the replaced probe card 140-j stored in the integrated value database 350, and then ends the processing for the wafer W.

[0109] Conventionally, probe cards have been replaced at a predetermined frequency, which sometimes results in probe cards being replaced even when they are not actually necessary. On the other hand, according to the third embodiment, by managing the amount of particles generated for each probe card 140-j, probe cards 140-j that need to be replaced can be appropriately replaced. This ultimately makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0110] [Modification of the third embodiment] The third embodiment may be combined with the second embodiment. This makes it possible to manage the prober device 2100-i equipped with the probe card 140-j. In this case, the storage unit 290 further includes a prober ID database (not shown) that stores probe card IDs and prober IDs in association with each other, in addition to the wafer ID database 340 and the integrated value database 350 shown in FIG.

[0111] In a combination of the third embodiment and the second embodiment, for example, the probe card ID of the probe card 140-j that needs to be replaced, the prober ID of the prober device 2100-i that mounts the probe card 140-j, and a warning urging the user to replace the probe card 140-j are output to the display unit 270. This allows the probe card 140-j to be appropriately replaced even in a particle measurement system that includes a plurality of prober devices 2100-i.

[0112] [Fourth embodiment] In the third embodiment, the amount of particles generated is managed for each probe card mounted on the prober device. Here, particles adhere to the probe needles of the probe card, but since different types of probe needles are used for different types of wafers W, the amount of particles attached varies depending on the probe needle. In the fourth embodiment, the amount of particles generated can be managed as the amount of particles attached for each probe needle.

[0113] The particle measurement system according to the fourth embodiment includes the prober apparatus 2100 according to the second embodiment and a three-dimensional shape measuring apparatus 4200 according to the fourth embodiment. The configuration of the prober apparatus 2100 is as described above, and therefore a description thereof will be omitted.

[0114] The configuration of a three-dimensional shape measuring apparatus 4200 according to the fourth embodiment will be described below with reference to Fig. 19. As shown in Fig. 19, the three-dimensional shape measuring apparatus 4200 according to the fourth embodiment is obtained by adding a position information acquiring unit 400 that acquires position information of the electrode pad P to the three-dimensional shape measuring apparatus 2200 according to the second embodiment. In the following description, the position information will be described as XY coordinates, as an example.

[0115] Methods for acquiring the position information (XY coordinates) of the electrode pad P include, for example, a method for acquiring the XY coordinates from the drive amount of the stage movement mechanism 230, a method for acquiring the XY coordinates by the non-contact three-dimensional measurement unit 280, a method for acquiring the XY coordinates from an image of the chip C taken by a camera (not shown), etc. These are well-known techniques, and therefore, explanations thereof will be omitted here.

[0116] The control unit 250 of the three-dimensional shape measuring apparatus 4200 according to the fourth embodiment manages the particle generation amount for each probe needle 141-k (k is a natural number) in a database. Fig. 20 shows an example of the database stored in the storage unit 290. As shown in Fig. 20, the storage unit 290 has a wafer type database 420, a needle database 430, and an integrated value database 440.

[0117] The wafer type database 420 stores, in association with each other, a wafer ID for identifying a wafer W and a wafer type ID for identifying the type of the wafer W. The needle database 430 stores, for each type of wafer W, information on the arrangement of the electrode pads P on the wafer W.

[0118] Specifically, the arrangement information of the electrode pads P includes, for each electrode pad P on the wafer W, a pad ID that identifies the electrode pad P, the XY coordinates of the electrode pad P, and a needle ID that identifies the probe needle 141-k that contacts the electrode pad P. Here, the XY coordinates may be relative coordinates based on, for example, a predetermined position on the wafer W or a predetermined position on the chip C.

[0119] The wafer type database 420 and the integrated value database 440 are registered in advance in the storage unit 290 by an operator or a manufacturer, and are updated as necessary. The integrated value database 440 stores the integrated value ΣΔV of the amount of generated particles for each probe needle 141-k.

[0120] Next, the particle measurement procedure in the fourth embodiment will be described with reference to Fig. 21. The particle measurement procedure in the fourth embodiment is almost the same as that in the second embodiment, except that step S50 is added after step S34 in Fig. 15, and steps S51 to S54 are performed instead of steps S35 to S38 in Fig. 15.

[0121] Only the differences from the second embodiment will be described below. In the fourth embodiment, after the wafer ID is read in step S34, in step S50 the position information acquisition unit 400 acquires the X and Y coordinates of the electrode pad P to be measured. Here, the acquired X and Y coordinates may be relative positions based on the same positions as the X and Y coordinates stored in the wafer type database 420 of the storage unit 290.

[0122] Subsequently, after performing steps S12 to S15, in step S51, the particle generation amount calculation unit 255 acquires a wafer type ID associated with the wafer ID read in step S34 from the wafer type database 420 in the storage unit 290. Furthermore, the particle generation amount calculation unit 255 refers to the needle database 430 and acquires a needle ID that identifies the probe needle 141-k that contacts the electrode pad P having the XY coordinates acquired in step S50, based on the arrangement information of the electrode pad P corresponding to the wafer type ID. Furthermore, the particle generation amount calculation unit 255 refers to the integrated value database 440 and adds the particle generation amount ΔV calculated in step S15 to the integrated value ΣΔV corresponding to the acquired needle ID, thereby updating the integrated value ΣΔV (step S51).

[0123] Thereafter, if it is determined that there are no other electrode pads P to be measured (step S17: YES), the determination unit 256 determines whether the integrated value ΣΔV calculated in step S51 exceeds a predetermined fourth threshold (step S52). Here, the fourth threshold may be a value different from the first to third thresholds used in the first to third embodiments. The fourth threshold is a preset value and may be appropriately set at the time of factory shipment or may be appropriately set or changed by the user at any time. If a certain amount or more of particles adhere to the probe needle 141-k, the inspection of the wafer W may be affected. However, the operator (or manufacturer) can empirically know the amount of particles that may affect the inspection based on the usage history of the prober device 2100-i. Therefore, the operator may set the fourth threshold based on experience.

[0124] If it is determined that the integrated value ΣΔV exceeds the predetermined fourth threshold (step S52: YES), the determination unit 256 outputs the coordinates of the electrode pad P acquired in step S50, information specifying the probe needle 141-k corresponding to the coordinates, and a warning to the display unit 270 (step S53). The operator who receives the warning cleans the probe card 140 as necessary.

[0125] Conventionally, there has been no method for quantitatively managing the amount of particles generated for each probe needle 141-k. On the other hand, according to the fourth embodiment of the present invention, it is possible to quantitatively manage the amount of particles generated for each probe needle 141-k, so that when cleaning the probe card 140, it is possible to properly clean the probe needles 141-k that need cleaning. This allows the probe card 140 to be cleaned efficiently, thereby improving the efficiency of the semiconductor manufacturing process.

[0126] [Determining the electrode pad to be measured] In the first to fourth embodiments described above, particle measurement is performed on the electrode pads P that are to be measured. The operator (or manufacturer) can arbitrarily determine the electrode pads P that are to be measured. For example, all of the electrode pads P on the wafer W may be the measurement targets, or a portion of all of the electrode pads P may be sampled and used as the measurement targets. When a portion of all of the electrode pads P are to be the measurement targets, information regarding the sampling of the electrode pads P that are to be measured is stored in advance in the storage unit 290 of the three-dimensional shape measuring apparatus 200, 2200, 4200 according to each embodiment. Sampling the electrode pads P can shorten the time required for particle measurement, thereby further improving the efficiency of the semiconductor manufacturing process.

[0127] When a portion of all the electrode pads P are to be measured, the electrode pads P may be sampled randomly, or may be sampled according to any rule that meets the needs of the operator. An example of a method for sampling the electrode pads P according to a rule will be described below.

[0128] [First sampling method] First, the first sampling method will be described with reference to Fig. 22. There are multiple chips on the wafer W, and in the first sampling method, all of the electrode pads P included in a specific chip C on the wafer W are sampled as measurement targets. For example, in the example shown in Fig. 22, of the multiple chips C on the wafer W, all of the four electrode pads P included in a specific chip C indicated by a thick solid line are sampled as measurement targets. Note that Fig. 22 shows only one chip C as the specific chip C, but naturally, multiple chips C may be determined as the specific chip C.

[0129] According to the first sampling method, particle measurement is performed on all electrode pads P included in a specific chip C on the wafer W, resulting in uniform sampling across the entire chip C. As a result, the amount of particles generated across the entire wafer W can be estimated with high accuracy.

[0130] [Second sampling method] Next, the second sampling technique will be described with reference to Fig. 23. There are multiple chips C on the wafer W, but in the probing operation by the prober apparatus 100, 2100, 2100-i, it may not be possible to probe the entire wafer W at once. In this case, multiple probing operations are performed, but in the second sampling technique, all electrode pads P that are contacted in one or more specific probing operations among the multiple probing operations are sampled as measurement targets.

[0131] FIG. 23 shows an example of sampling when the probe card 140 mounted on the prober device 100, 2100, or 2100-i can simultaneously perform probing operations on two chips C. In FIG. 23, the range of one probing operation is surrounded by a dashed line and includes the two chips C. Since there are seven chips C on the wafer W, four probing operations are required. In the example shown in FIG. 23, all eight electrode pads P contacted in one specific probing operation out of the four probing operations are sampled as measurement targets. Note that while FIG. 23 only samples the electrode pads P contacted in one probing operation, it goes without saying that electrode pads P contacted in multiple probing operations may also be sampled as measurement targets.

[0132] According to the second sampling method, particle measurements are performed on all electrode pads P that are contacted in one probing operation, so even if the amount of particles generated varies depending on the probe needle 141, the amount of particles generated on the entire wafer W can be estimated with high accuracy.

[0133] [Third sampling method] Next, the third sampling method will be described with reference to Fig. 24. For example, if the probe needles 141 are cantilever-type probe needles, not all of the probe needles 141 will contact the electrode pads P from the same direction. In the third sampling method, a certain percentage of all the electrode pads P are sampled as measurement targets for each contact direction.

[0134] Fig. 24 shows an example of sampling in which multiple probe needles 141 contact multiple electrode pads P on a chip C from multiple different directions. In the example shown in Fig. 24, three probe needles 141 each contact the electrode pads P from the top, bottom, left, and right directions (a total of 12 probe needles 141). In Fig. 24, probe needles 141 contacting from the same direction are surrounded by dashed lines.

[0135] In the example shown in Fig. 24, one electrode pad P is sampled as the measurement target from each of the contact directions, top, bottom, left, and right. In Fig. 24, the electrode pads P sampled as the measurement target are indicated by thick solid lines. As a result of this sampling, the electrode pads corresponding to one-third of all the probe needles 141 become the measurement targets.

[0136] In FIG. 24, one electrode pad P (one-third) is sampled as a measurement target in each contact direction, but it goes without saying that a plurality of electrode pads P may be sampled in each direction.

[0137] The contact state between the probe needles 141 and the electrode pads P is determined by the relative posture and direction of movement of the wafer W and the probe needles 141. Therefore, the amount of particles generated is easily affected by the direction of contact between the probe needles 141 and the electrode pads P. Therefore, by sampling a certain percentage of the electrode pads P from each of multiple contact directions, bias in the measurement results of the amount of particles generated due to the contact direction can be reduced. This makes it possible to estimate the amount of particles generated across the entire wafer W with high accuracy.

[0138] [Effects of the invention] As described above, according to the first embodiment, it is possible to quantitatively manage the amount of particles generated from the wafer W. Furthermore, since a warning is output when the amount of particles generated exceeds a predetermined threshold, an operator can appropriately clean the wafer W that needs cleaning. Ultimately, it is possible to improve the efficiency of the semiconductor manufacturing process.

[0139] Here, by adding the functions of the non-contact three-dimensional measurement unit 280 and the control unit 250 to the prober device 100, it is possible to realize the prober device 100 and the particle measurement device in a single device. This makes it possible to realize a particle measurement device at low cost. Furthermore, since there is no need to transport the wafer W from the prober device 100 to the three-dimensional shape measurement device 200 and load it into the three-dimensional shape measurement device 200, particles can be measured efficiently. Furthermore, since the recipe used when inspecting the wafer W (various parameters such as the size of the wafer W and the arrangement of chips) can be inherited and used, particles can be measured more efficiently.

[0140] According to the second embodiment, the amount of particles generated from the wafer W is quantitatively managed for each prober device 2100-i, and information identifying the prober device 2100-i whose amount of particles generated exceeds a predetermined threshold is output, along with a warning. This allows the operator to properly clean the prober device 2100-i or the probe needles 141 that require cleaning. This ultimately makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0141] According to the third embodiment, by managing the particle generation amount for each probe card 140-j, information identifying the probe card 140-j whose particle generation amount exceeds a predetermined threshold and a warning are output. This allows the probe card 140-j that needs to be replaced to be replaced appropriately. This ultimately makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0142] According to the fourth embodiment, by quantitatively managing the amount of particles generated for each probe needle 141-k, information identifying the probe needle 141-k whose amount of particles has exceeded a predetermined threshold is output, along with a warning. This allows the probe needle 141-k that needs cleaning to be properly cleaned when cleaning the probe card 140. Since the probe card 140 can be efficiently cleaned, the efficiency of the semiconductor manufacturing process can be further improved.

[0143] Here, the respective embodiments may be combined with each other. For example, the third embodiment may be combined with the second embodiment. This makes it possible to manage the prober device 2100-i on which the probe card 140-j is mounted.

[0144] In each embodiment, all electrode pads P of the chips C on the wafer W may be measured, or a portion of all the electrode pads P may be sampled and measured. By sampling the electrode pads P, the time required for particle measurement can be shortened, thereby further improving the efficiency of the semiconductor manufacturing process.

[0145] Although examples of the present invention have been described above, it goes without saying that the present invention is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present invention. [Explanation of symbols]

[0146] 100, 2100, 2100-i... prober device, 120, 220... stage, 230... stage moving mechanism, 140, 140-j... probe card, 141, 141-k... probe needle, 150, 250... control unit, 160, 260... operation unit, 170, 270... display unit, 180... test head, 200, 2200, 4200... three-dimensional shape measuring device, 251... three-dimensional measurement control unit, 252... acquisition unit, 253... detection unit, 254... unevenness calculation unit, 255... Tickle generation amount calculation unit, 256...determination unit, 290...storage unit, 300, 310...wafer ID reading unit, 320, 340...wafer ID database, 330, 350, 440...integrated value database, 400...position information acquisition unit, 420...wafer type database, 430...probe database, 1000, 2000...particle measurement system, C...chip, M...probe needle mark, P...electrode pad, W...wafer, R...pad reference surface, RM...probe mark area

Claims

1. 1. A particle measurement device for measuring particles generated when a probe needle contacts an electrode pad of a wafer in order to inspect the electrical characteristics of the wafer, comprising: an acquisition unit that acquires pad surface shape data indicating the surface shape of the electrode pad including a probe needle mark where the probe needle contacts from a non-contact three-dimensional measurement unit; an unevenness calculation unit that calculates the volume of a recess that is recessed from a pad reference surface in the electrode pad and the volume of a protrusion that protrudes from the pad reference surface based on the pad surface shape data; a particle generation amount calculation unit that calculates the particle generation amount from the volume difference between the volume of the recessed portion and the volume of the protruding portion calculated by the unevenness calculation unit; A particle measurement device comprising:

2. a first integrating unit that integrates the particle generation amounts calculated by the particle generation amount calculating unit for each of the electrode pads included in the wafer; a first output unit that outputs information indicating a possibility of an abnormality occurring in the inspection result based on a result of comparing the particle integrated value integrated by the first integration unit with a first threshold value; The particle measuring device according to claim 1 , further comprising:

3. a second integrating unit that integrates the particle generation amount for each prober device that inspects the electrical characteristics of the wafer; a second output unit that outputs information indicating a prober device that may cause an abnormality in the inspection result based on a result of comparing the particle integrated value integrated for each prober device by the second integration unit with a second threshold value; The particle measuring device according to claim 1 or 2, further comprising:

4. a third integrating unit that integrates the particle generation amount for each probe card used to inspect the electrical characteristics of the wafer; a third output unit that outputs information indicating a probe card that may cause an abnormality in the inspection result based on a result of comparing the particle integrated value integrated for each probe card by the third integration unit with a third threshold value; The particle measuring device according to claim 1 , further comprising:

5. a fourth integrating unit that integrates the particle generation amount for each probe needle of a probe card used to inspect the electrical characteristics of the wafer; a fourth output unit that outputs information indicating a probe needle that may cause an abnormality in the inspection result based on a result of comparing the particle integrated value integrated for each probe needle by the fourth integration unit with a fourth threshold value; The particle measuring device according to claim 1 , further comprising:

6. a non-contact three-dimensional measuring unit that generates pad surface shape data that indicates the surface shape of the electrode pad including a probe needle mark where the probe needle contacts; A particle measuring device comprising the particle measuring device according to any one of claims 1 to 5, Three-dimensional shape measuring device.

7. a non-contact three-dimensional measuring unit that generates pad surface shape data that indicates the surface shape of the electrode pad including a probe needle mark where the probe needle contacts; A particle measuring device according to any one of claims 1 to 5; A prober apparatus comprising:

8. one or more prober devices for contacting probe needles with electrode pads of the wafer to test the electrical properties of the wafer; a non-contact three-dimensional measuring device that generates pad surface shape data that indicates the surface shape of the electrode pad including the probe needle trace where the probe needle contacts; A particle measuring device according to any one of claims 1 to 5; A particle measurement system comprising:

9. 1. A particle measurement method for measuring particles generated when a probe needle contacts an electrode pad of a wafer in order to inspect electrical characteristics of the wafer, comprising: acquiring pad surface shape data indicating the surface shape of the electrode pad including a probe needle mark where the probe needle contacted the pad from a non-contact three-dimensional measurement unit; calculating a volume of a recess recessed from a pad reference surface and a volume of a protrusion protruding from the pad reference surface in the electrode pad based on the pad surface shape data; calculating the amount of particles generated from the volume difference between the volume of the recessed portion and the volume of the protruding portion; The particle measurement method includes:

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