Substrate processing apparatus and substrate processing method

Abstract

A substrate treatment device according to an embodiment of the present disclosure has: a treatment container; a substrate holding unit that is disposed inside of the treatment container and that holds a substrate; a gas nozzle that sprays a gas into the treatment container; an adjustment mechanism that adjusts the distance between the substrate held by the substrate holding unit and the gas nozzle; and a control unit, wherein the control unit is configured so as to set a target value for the distance on the basis of the flow state of the gas to be sprayed from the gas nozzle and to control the adjustment mechanism such that the distance becomes the target value.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] BACKGROUND ART A technique is known in which particles adhering to a substrate are removed by causing normal shock waves generated by ejecting gas from a gas nozzle to collide with the substrate (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2020 / 110858 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can efficiently remove particles depending on the processing environment. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a substrate processing apparatus comprising: A substrate processing apparatus, a processing vessel; a substrate holder disposed inside the processing vessel and configured to hold a substrate; a gas nozzle configured to inject gas into the processing vessel; an adjustment mechanism for adjusting the distance between the substrate held by the substrate holder and the gas nozzle; and a control unit, wherein the control unit adjusts a distance between the substrate held by the substrate holder and the gas nozzle based on a flow state of the gas injected from the gas nozzle. a vertical shock wave generated by the gas injection is caused to collide with the main surface of the substrate; Set the target value for the distance It is configured to , The control unit The adjustment mechanism is controlled so that the distance becomes the target value. and controlling the substrate processing apparatus so as to remove particles adhering to the main surface of the substrate by injecting the gas from the gas nozzle toward the main surface of the substrate while It is configured to: [Effects of the Invention]

[0006] According to the present disclosure, particles can be efficiently removed depending on the processing environment. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic view showing a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a cross-sectional view showing the collision of a normal shock wave with a substrate according to the embodiment. [Figure 3] FIG. 3 is a diagram illustrating an example of a distance adjustment method according to the embodiment. [Figure 4] FIG. 4 is a flowchart showing a substrate processing method according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] In the following description, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other, the X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical. Furthermore, "downward" means downward in the vertical direction (negative Z-axis direction), and "upward" means upward in the vertical direction (positive Z-axis direction).

[0010] (Substrate processing equipment) A substrate processing apparatus according to an embodiment will be described with reference to Figures 1 to 3. Figure 1 is a schematic view showing a substrate processing apparatus according to an embodiment.

[0011] The substrate processing apparatus 10 removes particles adhering to the main surface 3 of the substrate 2 by injecting gas toward the main surface 3 of the substrate 2. The substrate 2 is, for example, a semiconductor substrate such as a silicon wafer. The substrate processing apparatus 10 mainly includes a processing chamber 20, a substrate holding unit 30, a rotation shaft unit 32, a rotation drive unit 34, an elevation drive unit 36, a horizontal drive unit 38, a gas nozzle 40, a nozzle elevation drive unit 50, a gas supply mechanism 60, a pressure reduction mechanism 70, a Schlieren device 80, a distance measurement unit 90, a gas receiving unit 100, and a control unit 150.

[0012] The processing vessel 20 has an internal space in which the substrate 2 is processed. The processing vessel 20 has a loading / unloading port (not shown) for the substrate 2 and a gate valve (not shown) that opens and closes the loading / unloading port. The inner wall surface 22 of the processing vessel 20 has an upper wall surface 23, a lower wall surface 24, and a side wall surface 25 that extends from the outer periphery of the upper wall surface 23 to the outer periphery of the lower wall surface 24.

[0013] The substrate holding unit 30 is disposed inside the processing vessel 20. The substrate holding unit 30 has a substrate holding surface 31 that holds the substrate 2. The substrate holding unit 30 holds the substrate 2 horizontally, for example, with the main surface 3 of the substrate 2, from which particles are removed, facing upward. The substrate holding unit 30 may include an electrostatic chuck. In this case, the substrate 2 held on the substrate holding surface 31 can be fixed by electrostatic adsorption, thereby preventing warping and displacement of the substrate 2 on the substrate holding surface 31. The substrate holding unit 30 may also include a mechanical clamp. In this case, the substrate 2 held on the substrate holding surface 31 can be mechanically pressed down and fixed, thereby preventing warping and displacement of the substrate 2 on the substrate holding surface 31.

[0014] The rotation shaft 32 extends downward from the center of the substrate holder 30 and is disposed vertically.

[0015] The rotation drive unit 34 rotates the rotation shaft unit 32 around a vertical axis, thereby rotating the substrate holding unit 30. The rotation drive unit 34 includes, for example, a rotation motor and a transmission mechanism that transmits the rotational driving force of the rotation motor to the rotation shaft unit 32.

[0016] The lifting / lowering drive unit 36 ​​lifts and lowers the substrate holding unit 30. The lifting / lowering drive unit 36 ​​is configured with, for example, a fluid pressure cylinder. The lifting / lowering drive unit 36 ​​lifts and lowers the substrate holding unit 30 via, for example, the rotation drive unit 34. The lifting / lowering drive unit 36 ​​may lift and lower the substrate holding unit 30 without via the rotation drive unit 34. The lifting / lowering drive unit 36 ​​is an example of an adjustment mechanism.

[0017] The horizontal driving unit 38 moves the substrate holding unit 30 in a horizontal direction perpendicular to the center line of the rotation shaft unit 32, thereby relatively moving the gas nozzle 40 and the substrate holding unit 30 in the radial direction of the substrate 2. The horizontal driving unit 38 moves the substrate holding unit 30 along a guide rail, for example. The horizontal driving unit 38 may move the substrate holding unit 30 by pivoting an arm.

[0018] Gas nozzle 40 injects gas toward main surface 3 of substrate 2 held by substrate holder 30. Gas nozzle 40 is disposed above substrate holder 30 with gas injection port 41 facing downward. Gas nozzle 40 is attached to nozzle lifting / lowering drive unit 50.

[0019] The nozzle lifting / lowering drive unit 50 raises and lowers the gas nozzle 40. The nozzle lifting / lowering drive unit 50 is configured, for example, by a fluid pressure cylinder. The nozzle lifting / lowering drive unit 50 may be configured by an electric motor and a ball screw that converts the rotational motion of the electric motor into the lifting / lowering motion of the gas nozzle 40. The nozzle lifting / lowering drive unit 50 is provided on the upper wall surface 23 of the processing vessel 20. The nozzle lifting / lowering drive unit 50 is an example of an adjustment mechanism.

[0020] The gas supply mechanism 60 supplies gas to the gas nozzle 40. The gas supply mechanism 60 has a common line L1 whose downstream end is connected to the gas nozzle 40, a first branch line L2 extending from the upstream end of the common line L1 to a first supply source 61, and a second branch line L3 extending from the upstream end of the common line L1 to a second supply source 62.

[0021] The common line L1 is provided with a pressure regulating valve 63 that adjusts the supply pressure P of gas to the gas nozzle 40. The pressure regulating valve 63 adjusts the supply pressure P of gas to the gas nozzle 40 under the control of the control unit 150. A pressure booster such as a gas booster may also be provided on the common line L1 upstream of the pressure regulating valve 63.

[0022] The first branch line L2 is provided with a first on-off valve 64 and a first flow rate adjustment valve 65. When the first on-off valve 64 opens the gas flow path, gas is supplied from the first supply source 61 to the gas nozzle 40. The first flow rate adjustment valve 65 adjusts the flow rate of gas flowing through the first branch line L2. When the first on-off valve 64 closes the gas flow path, the supply of gas from the first supply source 61 to the gas nozzle 40 is stopped.

[0023] The second branch line L3 is provided with a second on-off valve 66 and a second flow rate adjustment valve 67. When the second on-off valve 66 opens the gas flow path, gas is supplied from the second supply source 62 to the gas nozzle 40. The second flow rate adjustment valve 67 adjusts the flow rate of gas flowing through the second branch line L3. When the second on-off valve 66 closes the gas flow path, the supply of gas from the second supply source 62 to the gas nozzle 40 is stopped.

[0024] The first supply source 61 supplies, for example, carbon dioxide (CO2) gas to the gas nozzle 40. The second supply source 62 supplies, for example, hydrogen (H2) gas to the gas nozzle 40. The carbon dioxide gas content C contained in the gas supplied to the gas nozzle 40 is adjusted by a first flow rate adjustment valve 65 and a second flow rate adjustment valve 67. The first flow rate adjustment valve 65 and the second flow rate adjustment valve 67 adjust the carbon dioxide gas content C under the control of the control unit 150.

[0025] The decompression mechanism 70 reduces the pressure inside the processing vessel 20. The decompression mechanism 70 includes a suction pump 71, a suction line 72, and a pressure adjustment valve 73. The suction pump 71 sucks gas from inside the processing vessel 20. The suction line 72 extends from a suction port 27 formed on the bottom wall surface 24 of the processing vessel 20 to the suction pump 71. The pressure adjustment valve 73 is provided midway along the suction line 72.

[0026] The schlieren device 80 generates an image (hereinafter referred to as a "schlieren image") that visualizes the gas injected from the gas nozzle 40 using the schlieren method. The schlieren device 80 includes a light source 81, a first schlieren lens 82, a second schlieren lens 83, a knife edge 84, and an imaging unit 85. The light source 81, the knife edge 84, and the imaging unit 85 are provided, for example, outside the processing vessel 20. The light source 81, the knife edge 84, and the imaging unit 85 may be provided inside the processing vessel 20. The first schlieren lens 82 and the second schlieren lens 83 are provided, for example, on the sidewall surface 25 of the processing vessel 20. The first schlieren lens 82 and the second schlieren lens 83 are disposed opposite each other with the gas nozzle 40 interposed therebetween.

[0027] Light from the light source 81 is collimated by a first Schlieren lens 82, passes through the gas ejected from the gas nozzle 40, and is focused by a second Schlieren lens 83. The focused light passes through a knife edge 84 and enters the imaging unit 85. The imaging unit 85 captures the light that has passed through the knife edge 84 and transmits the captured image to the control unit 150. If there is any variation in the refractive index of the gas ejected from the gas nozzle 40, the light will be distorted and out of focus. Therefore, the variation blocked by the knife edge 84 will appear as a shadow in the image. This allows the pressure distribution and mass flow velocity density distribution of the gas ejected from the gas nozzle 40 to be observed as a contrast between light and dark. For example, in a Schlieren image, the color changes from white to black as the gas pressure and mass flow velocity density increase. The light source 81 is, for example, a point light source. The imaging unit 85 is, for example, a camera.

[0028] The distance measurement unit 90 is provided above the substrate holding unit 30. The distance measurement unit 90 detects the distance from the distance measurement unit 90 to the main surface 3 of the substrate 2. The distance measurement unit 90 detects the distance from the distance measurement unit 90 to the main surface 3 of the substrate 2, for example, while moving along the main surface 3 of the substrate 2. In this case, the shape of the substrate 2, such as warpage of the substrate 2, can be detected. The distance measurement unit 90 is configured to be movable, for example, between a position directly above the center of the substrate holding unit 30 and a position directly above the outer periphery of the substrate holding unit 30. The distance measurement unit 90 transmits the detection value to the control unit 150. The distance measurement unit 90 may be, for example, a laser displacement meter. The distance measurement unit 90 is an example of a detection unit.

[0029] The gas receiving unit 100 is provided inside the processing vessel 20. The gas receiving unit 100 is configured to be movable between a gas receiving position below the injection port 41 and a retracted position near the side wall surface 25. At the gas receiving position, the gas receiving unit 100 receives the gas injected from the gas nozzle 40 and prevents the gas from being injected onto the main surface 3 of the substrate 2. The gas receiving unit 100 exhausts the received gas to the outside of the processing vessel 20.

[0030] The control unit 150 is configured by, for example, a computer. The control unit 150 includes a CPU (Central Processing Unit) 151 and a storage medium 152 such as a memory. The storage medium 152 stores programs that control various processes executed in the substrate processing apparatus 10. The control unit 150 controls the operation of the substrate processing apparatus 10 by causing the CPU 151 to execute the programs stored in the storage medium 152. The control unit 150 includes an input interface 153 and an output interface 154. The control unit 150 receives signals from the outside via the input interface 153 and transmits signals to the outside via the output interface 154.

[0031] The program may be stored in a computer-readable storage medium and installed from that storage medium into storage medium 152 of control unit 150. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnet optical disks (MOs), and memory cards. The program may be downloaded from a server via the Internet and installed into storage medium 152 of control unit 150.

[0032] 2 is a cross-sectional view showing the collision of a normal shock wave with a substrate according to an embodiment. The gas nozzle 40 is, for example, what is generally called a Laval nozzle. The gas nozzle 40 has an injection port 41, a supply port 42, a throat 43, and a tapered hole 45. The throat 43 has a smaller diameter than the supply port 42. The tapered hole 45 is provided between the throat 43 and the injection port 41. The diameter of the tapered hole 45 increases from the throat 43 toward the injection port 41.

[0033] The gas nozzle 40 is disposed inside the processing vessel 20. The interior of the processing vessel 20 is depressurized in advance by the decompression mechanism 70. The gas supplied to the supply port 42 of the gas nozzle 40 is accelerated to a speed exceeding the speed of sound as it passes through the throat 43, and is then ejected from the ejection port 41. The ejected gas forms a normal shock wave SW. The normal shock wave SW is also called a Mach disk. The normal shock wave SW is a shock wave with a wavefront perpendicular to the propagation direction. The shock wave is a discontinuous change in pressure that propagates inside the processing vessel 20 at supersonic speed.

[0034] The control unit 150 controls the collision of the gas with the substrate 2 held by the substrate holder 30. The collision of the gas with the substrate 2 varies depending on, for example, the distance G1 between the nozzle 41 of the gas nozzle 40 and the main surface 3 of the substrate 2.

[0035] Therefore, the control unit 150 controls the collision of the gas with the substrate 2 by adjusting the distance G1. The control unit 150 adjusts the distance G1, for example, by controlling the elevation drive unit 36 ​​to elevate and lower the substrate holding unit 30. The control unit 150 may also adjust the distance G1 by controlling the nozzle elevation drive unit 50 to elevate and lower the gas nozzle 40. The control unit 150 may also adjust the distance G1 by controlling the elevation drive unit 36 ​​and the nozzle elevation drive unit 50 to elevate and lower the substrate holding unit 30 and the gas nozzle 40.

[0036] The control unit 150 causes normal shock waves SW generated by the gas injection to collide with the main surface 3 of the substrate 2. In this case, since the normal shock waves SW act on the main surface 3 of the substrate 2, particles adhering to the main surface 3 of the substrate 2 can be easily and efficiently removed.

[0037] The center line of the gas nozzle 40 may be disposed perpendicular to the main surface 3 of the substrate 2. The wavefront of the normal shock wave SW collides parallel to the main surface 3 of the substrate 2. In this case, the normal shock wave SW acts on a wide range of the main surface 3 of the substrate 2, making it easy to efficiently remove particles. In addition, collapse of the concave-convex pattern on the main surface 3 of the substrate 2 can be suppressed.

[0038] The control unit 150 sets a target value for the distance G1 between the nozzle 41 of the gas nozzle 40 and the main surface 3 of the substrate 2 based on the flow state of the gas injected from the gas nozzle 40.

[0039] In one embodiment, the control unit 150 sets the target value of the distance G1 based on the gas pressure distribution or the gas mass flow rate density distribution calculated by a simulation using environmental parameters. The environmental parameters include parameters that affect the gas flow state. The environmental parameters include, for example, the carbon dioxide content C of the gas, the gas pressure, the gas flow rate, the gas temperature, the pressure inside the processing vessel 20, and the temperature inside the processing vessel 20. The gas pressure distribution and the gas mass flow rate density distribution are examples of the gas flow state. The control unit 150 sets the target value of the distance G1 so that the main surface 3 of the substrate 2 is located at a position where the gas pressure or the gas mass flow rate density is high. In this case, the normal shock wave SW collides with the main surface 3 of the substrate 2, making it easy to efficiently remove particles adhering to the main surface 3 of the substrate 2.

[0040] In one embodiment, the control unit 150 sets the target value of the distance G1 based on a schlieren image acquired by imaging the gas injected from the gas nozzle 40 with the schlieren device 80. The schlieren image is an example of the state of gas flow. The control unit 150, for example, analyzes the schlieren image to identify the position Z1 of the normal shock wave SW, and sets the target value of the distance G1 based on the identified position Z1 of the normal shock wave SW. The control unit 150 may generate a visualized image of the gas injected from the gas nozzle 40 using a device other than the schlieren device 80.

[0041] FIG. 3 is a diagram illustrating an example of a distance adjustment method according to an embodiment. The upper diagram of FIG. 3 illustrates the positional relationship between the substrate 2 and the gas nozzle 40 when the distance G1 is not the target value. The lower diagram of FIG. 3 illustrates the positional relationship between the substrate 2 and the gas nozzle 40 when the distance G1 is the target value. In the upper and lower diagrams of FIG. 3, the image on the left shows a Schlieren image, and the image on the right shows the gas pressure distribution. As shown in the upper and lower diagrams of FIG. 3, the Schlieren image changes from white to black as the gas pressure increases.

[0042] For example, as shown in the upper diagram of Figure 3, if the main surface 3 of the substrate 2 is located closer to the nozzle 41 than the position Z1 of the identified multiple normal shock waves SW that is closest to the nozzle 41, the control unit 150 adjusts the distance G1.

[0043] 3, the control unit 150 sets the target value of the distance G1 so that the main surface 3 of the substrate 2 is located slightly farther away than the position Z1 of the normal shock wave SW that is closest to the ejection port 41. In this case, the normal shock wave SW collides with the main surface 3 of the substrate 2, making it easier to efficiently remove particles adhering to the main surface 3 of the substrate 2.

[0044] For example, the control unit 150 may set a target value for the distance G1 so that the main surface 3 of the substrate 2 is positioned slightly farther away from the normal shock wave SW that is formed at a position farther from the ejection nozzle 41 than the normal shock wave SW that is closest to the ejection nozzle 41.

[0045] When performing processing using gas clusters, by placing the substrate 2 at or near the position where the normal shock wave SW is generated, the substrate 2 can be irradiated with a gas with higher energy, thereby efficiently removing particles. Gas clusters are, for example, aggregates of carbon dioxide gas molecules bonded together by van der Waals forces. When the gas clusters collide with the main surface 3 of the substrate 2, small particles (e.g., several tens of nanometers) adhering to the main surface 3 of the substrate 2 can be efficiently removed.

[0046] The collision of the gas with the substrate 2 also varies depending on, for example, the content C of carbon dioxide gas contained in the gas supplied to the gas nozzle 40, the supply pressure P of the gas to the gas nozzle 40, and the like.

[0047] Therefore, the control unit 150 may control the collision of the gas with the substrate 2 by controlling the content C and supply pressure P of the carbon dioxide gas.

[0048] The composition of the gas supplied to the gas nozzle 40 (e.g., carbon dioxide gas content C) is adjusted by, for example, a first flow rate adjustment valve 65 and a second flow rate adjustment valve 67. The gas supplied to the gas nozzle 40 may contain carbon dioxide gas. Carbon dioxide gas has a larger molecular weight than hydrogen gas, and therefore has a larger mass flow rate density. The gas supplied to the gas nozzle 40 may contain hydrogen gas. By including hydrogen gas, it is easier to suppress stalling of gas clusters. The supply pressure P of the gas supplied to the gas nozzle 40 is adjusted by a pressure adjustment valve 63.

[0049] According to the substrate processing apparatus 10 described above, the control unit 150 sets a target value for the distance G1 based on the flow state of the gas injected from the gas nozzle 40, and controls at least one of the lifting / lowering drive unit 36 ​​and the nozzle lifting / lowering drive unit 50 so that the distance G1 reaches the target value. This allows particles to be removed efficiently according to the processing environment.

[0050] (Substrate processing method) A substrate processing method according to an embodiment will be described with reference to Fig. 4. Fig. 4 is a flowchart showing the substrate processing method according to the embodiment. Steps S101 to S108 shown in Fig. 4 are performed under the control of the control unit 150. In one embodiment, steps S101 to S108 are performed in this order.

[0051] In step S101, a target value is set for distance G1 between outlet 41 of gas nozzle 40 and main surface 3 of substrate 2. In step S101, control unit 150 sets the target value for distance G1 between outlet 41 of gas nozzle 40 and main surface 3 of substrate 2 based on the flow state of the gas injected from gas nozzle 40. Step S101 is performed, for example, in a state where substrate 2 is not held by substrate holder 30.

[0052] In one embodiment, the control unit 150 sets the target value of the distance G1 based on the gas pressure distribution or the gas mass flow rate density distribution calculated by a simulation using environmental parameters. In one embodiment, the control unit 150 sets the target value of the distance G1 based on a Schlieren image acquired by capturing an image of the gas injected from the gas nozzle 40 with the Schlieren device 80.

[0053] In step S102, the substrate 2 is placed inside the processing vessel 20. In step S102, the transfer device loads the substrate 2 from outside the processing vessel 20 into the processing vessel 20, and places the loaded substrate 2 on the substrate holding surface 31 of the substrate holding part 30. The substrate holding part 30 holds the substrate 2 horizontally with the main surface 3 of the substrate 2 facing upward.

[0054] In step S103, the shape of the substrate 2 held by the substrate holding unit 30 is detected. In step S103, the distance measurement unit 90 detects the distance from the distance measurement unit 90 to the main surface 3 of the substrate 2. For example, the distance measurement unit 90 detects the distance to the main surface 3 of the substrate 2 while moving along the main surface 3 of the substrate 2. In this case, the shape of the substrate 2, such as warpage of the substrate 2, can be detected. The distance measurement unit 90 transmits the detection value to the control unit 150.

[0055] In step S104, gas is sprayed from the gas nozzle 40 disposed inside the processing vessel 20. In step S104, the pressure reduction mechanism 70 sucks gas from inside the processing vessel 20, and the gas supply mechanism 60 supplies gas to the gas nozzle 40. The composition of the gas supplied to the gas nozzle 40 (e.g., the content C of carbon dioxide gas) is adjusted by a first flow rate adjustment valve 65 and a second flow rate adjustment valve 67. The supply pressure P of the gas supplied to the gas nozzle 40 is adjusted by a pressure adjustment valve 63.

[0056] In step S105, normal shock waves SW are formed by gas injection. The region where the normal shock waves SW are formed is discontinuous, and there are regions where the normal shock waves SW are not formed.

[0057] In step S106, the normal shock wave SW is caused to impinge on the main surface 3 of the substrate 2. The wavefront of the normal shock wave SW may impinge parallel to the main surface 3 of the substrate 2. In this case, the normal shock wave SW acts on a wide range of the main surface 3 of the substrate 2. Furthermore, the collapse of the concave-convex pattern on the main surface 3 of the substrate 2 can be suppressed.

[0058] In step S107, the particles are removed. In step S107, the normal shock wave SW separates the particles from the main surface 3 of the substrate 2 by its pressure.

[0059] The above steps S104 to S107 are repeatedly performed while changing the position on the substrate 2 where the normal shock wave SW hits. The position is changed, for example, by the rotation drive unit 34 rotating the substrate holder 30 while the nozzle lift drive unit 50 moves the gas nozzle 40 in the radial direction of the substrate 2. The normal shock wave SW can be made to hit the entire main surface 3 of the substrate 2.

[0060] In one embodiment, the position on the substrate 2 where the normal shock wave SW hits is changed by rotating and moving the substrate holder 30 in the horizontal direction. The position on the substrate 2 where the normal shock wave SW hits may be changed by moving the gas nozzle 40 in the X-axis direction and the Y-axis direction while the substrate holder 30 is fixed.

[0061] In the above steps S104 to S107, the control unit 150 may control the distance G1 based on the shape of the substrate 2 detected in step S103. In this case, even if the substrate 2 is deformed, such as warped, the normal shock wave SW can be made to collide uniformly with the entire main surface 3 of the substrate 2.

[0062] Note that the target value of the distance G1 may be reset in steps S104 to S107. While injecting gas from the gas nozzle 40, the control unit 150 may reset the target value of the distance G1 based on the flow state of the gas injected from the gas nozzle 40 and control the distance G1 so that the distance G1 becomes the reset target value. In this case, even if the flow state of the gas changes while the gas is being injected from the gas nozzle 40, the target value of the distance G1 can be reset in real time to improve particle removal efficiency. Similarly to step S101, the control unit 150 may reset the target value of the distance G1 based on a gas pressure distribution or a gas mass flow rate density distribution calculated by a simulation using environmental parameters. Similarly to step S101, the control unit 150 may reset the target value of the distance G1 based on a Schlieren image captured by the Schlieren device 80 while the gas is being injected from the gas nozzle 40.

[0063] In step S108, the substrate 2 is transferred from inside the processing vessel 20 to outside the processing vessel 20. In step S108, the substrate holding unit 30 releases its hold on the substrate 2, and the transfer device receives the substrate 2 from the substrate holding unit 30 and transfers the received substrate 2 from inside the processing vessel 20 to outside the processing vessel 20.

[0064] According to the substrate processing method described above, a target value for the distance G1 is set based on the flow state of the gas injected from the gas nozzle 40, and at least one of the lifting / lowering drive unit 36 ​​and the nozzle lifting / lowering drive unit 50 is controlled so that the distance G1 becomes the target value. This allows particles to be removed efficiently according to the processing environment.

[0065] 4 may be performed in a different order. For example, step S101 may be performed after step S102. In this case, gas is injected from gas nozzle 40 while substrate 2 is held by substrate holder 30. Therefore, to prevent the gas injected from gas nozzle 40 from being injected onto main surface 3 of substrate 2, gas receiving unit 100 may be moved to a gas receiving position below injection port 41. For example, step S103 may be performed in parallel with steps S104 to S107.

[0066] 4 may not be performed. For example, if a target value for distance G1 is set in steps S104 to S107, step S101 may not be performed. For example, if step S101 is performed, the target value for distance G1 may not be reset in steps S104 to S107. For example, if no deformation such as warping has occurred in the substrate 2 held by the substrate holder 30, step S103 may not be performed.

[0067] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0068] This international application claims priority based on Japanese Patent Application No. 2022-139192, filed on September 1, 2022, the entire contents of which are incorporated herein by reference. [Explanation of symbols]

[0069] 2 boards 10. Substrate processing equipment 20 Processing container 30 Board holding part 40 Gas Nozzle 36 Lifting drive unit 50 Nozzle lifting drive unit 150 control section

Claims

1. A substrate processing apparatus, A processing vessel; a substrate holder disposed inside the processing chamber and holding a substrate; a gas nozzle for injecting gas into the processing vessel; an adjustment mechanism for adjusting the distance between the substrate held by the substrate holder and the gas nozzle; A control unit; and the control unit is configured to set a target value of the distance based on a flow state of the gas injected from the gas nozzle so that a normal shock wave generated by the injection of the gas impinges on a main surface of the substrate; the control unit is configured to control the substrate processing apparatus to remove particles adhering to the main surface of the substrate by injecting the gas from the gas nozzle toward the main surface of the substrate while controlling the adjustment mechanism so that the distance becomes the target value. Substrate processing equipment.

2. The control unit is configured to calculate the flow state of the gas by a simulation using environmental parameters that affect the flow state of the gas. The substrate processing apparatus according to claim 1 .

3. the control unit is configured to acquire a flow state of the gas by capturing an image of the gas injected from the gas nozzle. The substrate processing apparatus according to claim 1 .

4. the control unit is configured to control the adjustment mechanism while injecting the gas from the gas nozzle onto the substrate held by the substrate holder. The substrate processing apparatus according to claim 1 .

5. the control unit is configured to control the adjustment mechanism in a state where the substrate is not held by the substrate holding unit. The substrate processing apparatus according to claim 1 .

6. a detection unit for detecting a shape of the substrate held by the substrate holding unit; the control unit is configured to control the adjustment mechanism based on the shape of the substrate detected by the detection unit. The substrate processing apparatus according to claim 1 .

7. The gas includes carbon dioxide gas and hydrogen gas. The substrate processing apparatus according to claim 1 .

8. a step of holding the substrate on a substrate holder disposed inside the processing chamber; injecting gas from a gas nozzle disposed inside the processing vessel; setting a target value of the distance between the substrate held by the substrate holder and the gas nozzle based on a flow state of the gas injected from the gas nozzle so that a normal shock wave generated by the injection of the gas collides with a main surface of the substrate; removing particles adhering to the main surface of the substrate by injecting the gas from the gas nozzle toward the main surface of the substrate while controlling the distance so that the distance becomes the target value; A substrate processing method comprising:

9. the setting step includes calculating the flow state of the gas through a simulation using environmental parameters that affect the flow state of the gas; The substrate processing method according to claim 8 .

10. the setting step includes acquiring a flow state of the gas by imaging the gas injected from the gas nozzle. The substrate processing method according to claim 8 .

11. the setting step is performed while the gas is being sprayed from the gas nozzle onto the substrate held by the substrate holder; The substrate processing method according to any one of claims 8 to 10.

12. the setting step is performed in a state where the substrate is not held by the substrate holding part. The substrate processing method according to any one of claims 8 to 10.

13. detecting a shape of the substrate held by the substrate holder; the controlling step includes controlling the distance based on the shape of the substrate detected in the detecting step. The substrate processing method according to claim 8 .

14. The gas includes carbon dioxide gas and hydrogen gas. The substrate processing method according to claim 8 .

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