Method for determining initial contact points of partial fields and method for shaping surfaces

Abstract

To provide a method of determining a contact point and a novel method for contacting a substrate to a molding surface in a photomechanical molding system.SOLUTION: A system and a method for shaping a membrane on a partial field include determining an initial contact point. Information regarding the partial field of a substrate and the edge of a patternable area of the substrate is received. A code is determined that connects the intersection vertices of the partial field and the edge. The coordinates of the bisector that bisects the code and that is orthogonal to the code are determined. An initial contact point area where a template and a moldable material on the substrate contact each other is determined on the bisector. The contact is made between the moldable material of the partial field and the template at an initial contact point within the initial contact point range.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This disclosure relates to photomechanical molding systems (e.g., nanoimprint lithography and inkjet adaptive planarization). In particular, this disclosure relates to a novel method for determining contact points and contacting a substrate to a molding surface. [Background technology]

[0002] Nanofabrication involves the fabrication of very small structures, with features on the order of 100 nanometers or less. One application in which nanofabrication has had a significant impact is the manufacture of integrated circuits. The semiconductor processing industry continues to strive for greater production yields while increasing the circuits formed per unit area on a substrate. Improvements in nanofabrication include providing greater process control and / or improving throughput, while simultaneously enabling continued reductions in the minimum feature dimensions of the structures formed.

[0003] One nanofabrication technique in use today is commonly referred to as nanoimprint lithography. Nanoimprint lithography is useful in a variety of applications, including, for example, fabricating one or more layers of an integrated device by forming a film on a substrate. Examples of integrated devices include, but are not limited to, CMOS logic, microprocessors, NAND flash memory, NOR flash memory, DRAM memory, MRAM, 3D cross-point memory, Re-RAM, Fe-RAM, STT-RAM, MEMS, and the like. Exemplary nanoimprint lithography systems and processes are described in detail in numerous publications, such as U.S. Pat. No. 8,349,241, U.S. Pat. No. 8,066,930, and U.S. Pat. No. 6,936,194, all of which are incorporated herein by reference.

[0004] The nanoimprint lithography techniques disclosed in each of the above patents describe forming a film on a substrate by forming a relief pattern in a (polymerizable) layer of a formable material, the shape of which can then be used to transfer a pattern corresponding to the relief pattern into and / or onto the underlying substrate.

[0005] The molding process uses a template spaced apart from the substrate. A formable liquid is applied onto the substrate. The template contacts the formable liquid, which is deposited in a droplet pattern, causing the formable liquid to spread and fill the space between the template and the substrate. The formable liquid is solidified to form a film having a shape (pattern) that conforms to the molding surface of the template. After solidification, the template is separated from the solidified layer, separating the template and the substrate.

[0006] The substrate and solidified layer may then undergo known steps and processes for device (article) fabrication, including, for example, curing, oxidation, layer formation, deposition, doping, planarization, etching, moldable material removal, dicing, bonding, and packaging, etc. For example, the pattern on the solidified layer may undergo an etching process to transfer the pattern to the substrate. Summary of the Invention

[0007] A first embodiment may be a method. The method may include receiving information about a partial field of a substrate and an edge of a patternable area of ​​the substrate. The method may further include determining a chord connecting an intersection vertex of the partial field and the edge. The method may further include bisecting the chord and determining coordinates of a bisector perpendicular to the chord. The method may further include determining an initial contact point range on the bisector where the template and the moldable material on the substrate contact each other. The method may further include contacting the moldable material of the partial field with the template at an initial contact point within the initial contact point range.

[0008] In one aspect of the first embodiment, the area of ​​the partial field is less than 30% of the area of ​​the full field of the substrate.

[0009] The first embodiment may further include determining control conditions that allow the template to initially contact the formable material at the initial contact point.

[0010] In one aspect of the first embodiment, the control conditions include pressure applied to a back surface of the template to cause the template to bend.

[0011] In one aspect of the first embodiment, the control condition includes a tilt of the template relative to the substrate.

[0012] In one aspect of the first embodiment, the control conditions include a set of control values ​​supplied to a substrate chuck, the substrate chuck deforming the shape of the substrate.

[0013] In one aspect of the first embodiment, the edge of the patternable area is set inside an edge of a substrate.

[0014] In one aspect of the first embodiment, the substrate may be divided into a plurality of fields including a plurality of full fields and a plurality of partial fields. The plurality of partial fields may be classified into a plurality of partial field categories. The first embodiment may further include determining an initial contact point for a particular partial field of the plurality of partial fields based on the partial field category.

[0015] In one aspect of the first embodiment, the partial field category may be based on the shape of the partial field.

[0016] The first embodiment may also be a method of forming a film on a substrate in a plurality of fields. A subset of the plurality of fields classified as partial fields is formed using the first embodiment. The method of forming a film may further include adjusting control conditions after initial contact so that the template contacts the entire formable material in a particular field. The method of forming a film may further include exposing the formable material beneath the template to actinic radiation after the template and the substrate are substantially parallel to one another. The method of forming a film may further include separating the template from the formable material.

[0017] The first embodiment may also be a method of manufacturing an article from a substrate on which a film has been formed. The first embodiment may further include processing the substrate. The first embodiment may further include forming the article from the processed device-producing substrate.

[0018] The first embodiment further includes, after the initial contact, increasing the template back pressure used by the template chuck to bend the template.

[0019] In one aspect of the first embodiment, the received information may include a layout of a plurality of fields.

[0020] A second embodiment may be a system including one or more memories and one or more processors. The one or more processors may be configured to receive information regarding a template, a partial field of a substrate, and an edge of a patternable area of ​​the substrate. The one or more processors may be further configured to determine a code connecting an intersection vertex of the partial field and the edge. The one or more processors may be further configured to bisect the code and determine coordinates of a bisector perpendicular to the code. The one or more processors may be further configured to determine an initial contact point range on the bisector where the template and the moldable material on the substrate contact each other. The one or more processors may be further configured to send instructions to a molding system to contact the moldable material of the partial field on the substrate with the template at an initial contact point within the initial contact point range.

[0021] In an aspect of the second embodiment, the processor is further configured to determine control conditions that allow the template to initially contact the formable material at the initial contact point.

[0022] The second embodiment may further include a template chuck that applies pressure to the back surface of the template to bend the template. The control condition may include the pressure.

[0023] The second embodiment may further include a plurality of actuators for adjusting a tilt of the template relative to the substrate, and the control condition may include the tilt.

[0024] The second embodiment may further include a substrate chuck that deforms the shape of the substrate, and the control conditions may include a set of control values ​​supplied to the substrate chuck.

[0025] In one aspect of the second embodiment, the substrate is divided into a plurality of fields including a plurality of full fields and a plurality of partial fields, the plurality of partial fields being classified into a plurality of partial field categories, and the processor may be further configured to determine an initial contact point for a particular partial field of the plurality of partial fields based on the partial field category.

[0026] In one aspect of the second embodiment, the subfield category is based on the shape of the subfield.

[0027] These and other objects, features, and advantages of the present disclosure will become apparent from a reading of the following detailed description of exemplary embodiments of the present disclosure in conjunction with the accompanying drawings and the appended claims. [Brief explanation of the drawings]

[0028] So that the features and advantages of the present disclosure may be understood in detail, a more particular description of the embodiments of the present disclosure may be had by reference to the embodiments illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, since the present disclosure may admit of other equally effective embodiments.

[0029] [Figure 1] FIG. 1 is a diagram of an exemplary nanoimprint lithography system including a template having a mesa spaced apart from a substrate, as used in one embodiment.

[0030] [Figure 2A] FIG. 2A is a diagram of an exemplary template that may be used in one embodiment. [Figure 2B] FIG. 2B is a diagram of an exemplary template that may be used in one embodiment.

[0031] [Figure 3]FIG. 3 is a flow chart illustrating an exemplary imprint method used in one embodiment.

[0032] [Figure 4A] FIG. 4A is a diagram of a layout of fields on a substrate used in one embodiment. [Figure 4B] FIG. 4B is a diagram of a layout of fields on a substrate used in one embodiment.

[0033] [Figure 4C] FIG. 4C is a diagram of a small partial field on a substrate used in one embodiment.

[0034] [Figure 5] FIG. 5 is a flow chart illustrating a method for determining the ICP of a small subfield used in one embodiment.

[0035] [Figure 6A] FIG. 6A is a diagram of a small partial field on a substrate used in one embodiment. [Figure 6B] FIG. 6B is a diagram of a small partial field on a substrate used in one embodiment. [Figure 6C] FIG. 6C is a diagram of a small partial field on a substrate used in one embodiment. [Figure 6D] FIG. 6D is a diagram of a small partial field on a substrate used in one embodiment.

[0036] [Figure 7A] FIG. 7A is a diagram of a template and substrate used in one embodiment. [Figure 7B] FIG. 7B is a diagram of a template and substrate used in one embodiment. [Figure 7C] FIG. 7C is a diagram of a template and substrate used in one embodiment. [Figure 7D] FIG. 7D is a diagram of a template and substrate used in one embodiment. [Figure 7E] FIG. 7E is a diagram of a template and substrate used in one embodiment.

[0037] [Figure 8A] FIG. 8A is a chart illustrating the relationship between ICP offset and control parameters of a molding system used in one embodiment. [Figure 8B] FIG. 8B is a chart illustrating the relationship between ICP offset and control parameters of a molding system used in one embodiment.

[0038] [Figure 9] 9A-9G are timing diagrams illustrating control parameters of the molding system used in one embodiment.

[0039] [Figure 10] FIG. 10 is a flow chart illustrating the adjustment of control parameters of a molding system used in one embodiment.

[0040] Throughout the drawings, the same reference numerals and characters, unless otherwise stated, are used to denote like features, elements, components, or portions of the illustrated embodiments. Moreover, while the present disclosure will be described in detail with reference to the drawings, it is done so in connection with illustrative exemplary embodiments. It is intended that changes and modifications can be made to the exemplary embodiments described without departing from the true scope and spirit of the subject disclosure, as defined by the appended claims. DETAILED DESCRIPTION OF THE INVENTION

[0041] Nanoimprint lithography techniques can be used in a step-by-step and repeatable manner to mold a film with a template into multiple fields (areas) across a substrate. The patterned areas (mesas) of the substrate and template can have different shapes and sizes. For example, a substrate can have an area that can be patterned in a circular, elliptical, polygonal, or some other shape. The mesa is typically smaller than the substrate and has a different shape than the substrate. The substrate is divided into multiple full fields and multiple partial fields. A full field is the same size as the mesa. A partial field is a field on the edge of the substrate where the edge of the patterned area on the substrate intersects with the patterned area of ​​the mesa. These fields can be divided into multiple categories based on their shape and / or area relative to the full field.

[0042] Partial fields tend to have higher defect rates and / or longer processing times than full fields. Furthermore, small partial fields, having an area less than 30% of the full field, are particularly challenging. What is needed is a method for reducing the defect rate and / or processing time of small partial fields.

[0043] Molding System 1 is a diagram of a molding system 100 (e.g., a nanoimprint lithography system or an inkjet adaptive planarization system) in which one embodiment may be implemented. The molding system 100 is used to create an imprinted (molded) film on a substrate 102. The substrate 102 may be coupled to a substrate chuck 104. The substrate chuck 104 may be, but is not limited to, a vacuum chuck, a pin-type chuck, a groove-type chuck, an electrostatic chuck, an electromagnetic chuck, etc.

[0044] The substrate 102 and substrate chuck 104 may be further supported by a substrate positioning stage 106. The substrate positioning stage 106 may provide translational and / or rotational motion along one or more of position axes x, y, and z and rotation axes θ, ψ, and φ. The substrate positioning stage 106, substrate 102, and substrate chuck 104 may also be positioned on a base (not shown). The substrate positioning stage may be part of a positioning system. In an alternative embodiment, the substrate chuck 104 may be mounted on a base.

[0045] Spaced apart from the substrate 102 is a template 108 (also called a superstrate). The template 108 may include a body having a mesa (also called a mold) 110 extending toward the substrate 102 on a front side of the template 108. The mesa 110 may also have a molding surface 112 thereon on the front side of the template 108. The molding surface 112, also known as the patterning surface, is the surface of the template that molds the moldable material 124. In one embodiment, the molding surface 112 is planar and is used to planarize the moldable material. Alternatively, the template 108 may be formed without the mesa 110, in which case the surface of the template that faces the substrate 102 is identical to the mesa 110, and the molding surface 112 is the surface of the template that faces the substrate 102.

[0046] The template 108 may be formed from materials including, but not limited to, fused silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metals, hardened sapphire, etc. The molding surface 112 may have features defined by a plurality of spaced apart template recesses 114 and / or template protrusions 116. The molding surface 112 defines a pattern that forms the basis of a pattern that may be formed on the substrate 102. In an alternative embodiment, the molding surface 112 is featureless, in which case a flat surface is formed on the substrate. In an alternative embodiment, the molding surface 112 is featureless and is the same size as the substrate, in which case a flat surface is formed across the entire substrate.

[0047] The template 108 may be coupled to a template chuck 118. The template chuck 118 may be, but is not limited to, a vacuum chuck, a pin-type chuck, a groove-type chuck, an electrostatic chuck, an electromagnetic chuck, and / or other similar chuck types. The template chuck 118 may be configured to apply varying stress, pressure, and / or strain to the template 108 across the template. The template chuck 118 may include a template magnification control system 121. The template magnification control system 121 may include piezoelectric actuators (or other actuators) that can squeeze and / or stretch different portions of the template 108. The template chuck 118 may include a system such as a zone-based vacuum chuck, an actuator array, a pressure bladder, or the like that can apply a pressure differential to the backside of the template, causing the template to bend and deform.

[0048] The template chuck 118 may be coupled to a forming head 120 that is part of a positioning system. The forming head 120 may be movably coupled to a bridge. The forming head 120 may include one or more actuators, such as a voice coil motor, a piezoelectric motor, a linear motor, or a nut and screw motor, configured to move the template chuck 118 relative to the substrate in at least the z-axis direction, and potentially in other directions (e.g., position axes x and y, and rotation axes θ, ψ, and φ).

[0049] The molding system 100 may further include a fluid dispenser 122. The fluid dispenser 122 may also be movably coupled to the bridge. In one embodiment, the fluid dispenser 122 and the molding head 120 share one or more or all of the positioning components. In an alternative embodiment, the fluid dispenser 122 and the molding head 120 move independently of one another. The fluid dispenser 122 may be used to deposit a liquid formable material 124 (e.g., a polymerizable material) onto the substrate 102 in a droplet pattern. Additional formable material 124 may also be added to the substrate 102 using techniques such as drop dispensing, spin coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, etc., before the formable material 124 is deposited on the substrate 102. The formable material 124 may be dispensed onto the substrate 102 before and / or after a desired volume is defined between the molding surface 112 and the substrate 102, depending on design considerations. Moldable material 124 can include a mixture including monomers such as those described in US Pat. No. 7,157,036 and US Pat. No. 8,076,386, both of which are incorporated herein by reference.

[0050] Different fluid dispensers 122 can use different technologies to dispense the formable material 124. If the formable material 124 is jettable, an inkjet-type dispenser can be used to dispense the formable material. For example, thermal inkjet, microelectromechanical system (MEMS)-based inkjet, valve jet, and piezoelectric inkjet are common technologies for dispensing jettable liquids.

[0051] The molding system 100 may further include a curing system that induces a phase change of the liquid formable material into a solid material whose upper surface is determined by the shape of the molding surface 112. The curing system may include at least one radiation source 126 that directs actinic energy along an exposure path 128. The molding head and substrate positioning stage 106 may be configured to position the template 108 and substrate 102 in superimposition with the exposure path 128. The radiation source 126 delivers actinic energy along the exposure path 128 after the template 108 contacts the formable material 128. FIG. 1 shows the exposure path 128 when the template 108 is not in contact with the formable material 124 for illustrative purposes so that the relative positions of the individual components can be easily identified. Those skilled in the art will understand that the exposure path 128 does not substantially change when the template 108 contacts the formable material 124. In one embodiment, actinic energy may be directed through both template chuck 118 and template 108 to moldable material 124 beneath template 108. In one embodiment, the actinic energy generated by radiation source 126 is UV light that induces polymerization of monomers in moldable material 124.

[0052] The molding system 100 may further include a field camera 136 positioned to view the spread of the moldable material 124 after the template 108 contacts the moldable material 124. FIG. 1 illustrates the optical axis of the image field of the field camera as a dashed line. As shown in FIG. 1, the molding system 100 may include one or more optical components (e.g., a dichroic mirror, a beam combiner, a prism, a lens, a mirror, etc.) that combine actinic radiation with light detected by the field camera. The field camera 136 may be configured to detect the spread of the moldable material under the template 108. The optical axis of the field camera 136 shown in FIG. 1 is straight, but may be bent by one or more optical components. The field camera 136 may include one or more of a CCD, a sensor array, a line camera, and a photodetector configured to collect light having wavelengths indicative of contrast between areas under the template 108 that are in contact with the moldable material and areas under the template 108 that are not in contact with the moldable material 124. The field camera 136 may be configured to collect monochromatic images of visible light. The field camera 136 can be configured to provide images of the spreading of the moldable material 124 under the template 108 and the separation of the template 108 from the hardened moldable material, and can be used to track the imprint (molding) process. The field camera 136 can also be configured to measure interference patterns, which change as the moldable material 124 spreads across the gap between the molding surface 112 and the substrate surface 130.

[0053] Molding system 100 may further include a drop inspection system 138 separate from field camera 136. Drop inspection system 138 may include one or more of a CCD, a camera, a line camera, and a photodetector. Drop inspection system 138 may include one or more optical components such as a lens, a mirror, an optical diaphragm, an aperture, a filter, a prism, a polarizer, a window, adaptive optics, and / or a light source. Drop inspection system 138 may be positioned to inspect the drop before molding surface 112 contacts moldable material 124 on substrate 102. In an alternative embodiment, field camera 136 may be configured as drop inspection system 138 and used before molding surface 112 contacts moldable material 124.

[0054] Molding system 100 may further include a thermal radiation source 134 that may be configured to provide a spatial distribution of thermal radiation to one or both of template 108 and substrate 102. Thermal radiation source 134 may include one or more thermal electromagnetic radiation sources that heat one or both of substrate 102 and template 108 without solidifying moldable material 124. Thermal radiation source 134 may include an SLM, such as a digital micromirror device (DMD), liquid crystal on silicon (LCoS), or liquid crystal device (LCD), to modulate the spatiotemporal distribution of thermal radiation. Molding system 100 may further include one or more optical components used to combine actinic radiation, thermal radiation, and radiation collected by field camera 136 into a single optical path that intersects the imprint field when template 108 contacts moldable material 124 on substrate 102. Thermal radiation source 134 can send thermal radiation along a thermal radiation path (illustrated as two thick, dark lines in FIG. 1 ) after template 108 contacts moldable material 128. FIG. 1 shows the thermal radiation path when template 108 is not in contact with moldable material 124; this is done for illustrative purposes so that the relative positions of the individual components can be easily identified. Those skilled in the art will understand that the thermal radiation path does not substantially change when template 108 is in contact with moldable material 124. While FIG. 1 shows the thermal radiation path terminating at template 108, it may also terminate at substrate 102. In an alternative embodiment, thermal radiation source 134 is below substrate 102, and the thermal radiation path is not combined with actinic radiation and visible light.

[0055] A substrate coating 132 may be applied to the substrate 102 before the formable material 124 is dispensed onto the substrate. In one embodiment, the substrate coating 132 may be an adhesive layer. In one embodiment, the substrate coating 132 may be applied to the substrate 102 before the substrate is loaded onto the substrate chuck 104. In an alternative embodiment, the substrate coating 132 may be applied to the substrate 102 while the substrate 102 is on the substrate chuck 104. In one embodiment, the substrate coating 132 may be applied by spin coating, dip coating, drop dispensing, slot dispensing, etc. In one embodiment, the substrate 102 may be a semiconductor wafer. In another embodiment, the substrate 102 may be a blank template (replica blank) that may be imprinted and then used to create a daughter template.

[0056] The molding system 100 can include an imprint field atmosphere control system, such as a gas and / or vacuum system, examples of which are described in U.S. Patent Publication Nos. 2010 / 0096764 and 2019 / 0101823, which are incorporated herein by reference. The gas and / or vacuum system can include one or more pumps, valves, solenoids, gas sources, gas lines, etc., configured to flow one or more different gases at different times and in different regions. The gas and / or vacuum system can be connected to a first gas delivery system that transports gas to and from the edge of the substrate 102 and controls the imprint field atmosphere by controlling the flow of gas at the edge of the substrate 102. The gas and / or vacuum system can be connected to a second gas delivery system that transports gas to and from the edge of the template 108 and controls the imprint field atmosphere by controlling the flow of gas at the edge of the template 108. The gas and / or vacuum system may be connected to a third gas delivery system that transports gas to and from above the template 108 and controls the imprint field atmosphere by controlling the flow of gas through the template 108. One or more of the first, second, and third gas delivery systems may be used in combination or individually to control the flow of gas in and around the imprint field.

[0057] The molding system 100 may be coordinated, controlled, and / or directed by one or more processors 140 (controllers) in communication with one or more components and / or subsystems, such as the substrate chuck 104, the substrate positioning stage 106, the template chuck 118, the molding head 120, the fluid dispenser 122, the radiation source 126, the thermal radiation source 134, the field camera 136, the imprint field ambient control system, and / or the droplet inspection system 138. The processor 140 may operate based on instructions in a computer-readable program stored in a non-transitory computer-readable memory 142. The processor 140 may be or include one or more of a CPU, an MPU, a GPU, an ASIC, an FPGA, a DSP, and a general-purpose computer. The processor 140 may be a general-purpose controller or a general-purpose computing device configured to be a controller. Examples of non-transitory computer-readable memory include, but are not limited to, RAM, ROM, CDs, DVDs, Blu-rays, hard drives, network-attached storage (NAS), intranet-connected non-transitory computer-readable storage devices, and internet-connected non-transitory computer-readable storage devices. Controller 140 may include multiple processors included in molding system 100a and in communication with molding system 100a. Processor 140 may communicate with networked computers 140a where analysis is performed to generate control files, such as droplet patterns. In one embodiment, one or both of networked computers 140a includes one or more graphical user interfaces (GUIs) 141 and displays in communication with processor 140 that are presented to an operator and / or user.

[0058] The molding head 120, the substrate positioning stage 106, or both vary the distance between the mold 110 and the substrate 102 to define a desired volume (a bounded physical extent in three dimensions) to be filled with the moldable material 124. For example, the molding head 120 can apply a force to the template 108 to bring the mold 110 into contact with the moldable material 124. After the desired volume is filled with the moldable material 124, the radiation source 126 generates actinic radiation (e.g., UV, 248 nm, 280 nm, 350 nm, 365 nm, 395 nm, 400 nm, 405 nm, 435 nm, etc.) that cures, solidifies, and / or crosslinks the moldable material 124, conforming the shape of the substrate surface 130 to the molding surface 112 and defining a patterned layer on the substrate 102. Moldable material 124 is cured while template 108 is in contact with moldable material 124, forming a patterned layer on substrate 102. Thus, molding system 100 uses a molding process to form a patterned layer having recesses and protrusions that are the inverse of the pattern in molding surface 112. In an alternative embodiment, molding system 100 uses a molding process to form a planar layer having a molding surface 112 without features.

[0059] The molding process can be repeated with multiple imprint fields (also known simply as fields or shots) spread across the substrate surface 130. Each imprint field can be the same size as a mesa 110 or the same size as the pattern area of ​​the mesa 110. The pattern area of ​​the mesa 110 is the area of ​​the molding surface 112 used to imprint a pattern on the substrate 102 that is a device feature, or to form device features in subsequent processing. The pattern area of ​​the mesa 110 may or may not include mass velocity variation features (fluid control features) used to prevent overflow from forming on the edges of the imprint field. In an alternative embodiment, the substrate 102 has only one imprint field the same size as the substrate 102 or the area of ​​the substrate 102 that is patterned by the mesa 110. In an alternative embodiment, the imprint fields overlap. Some of the imprint fields may be partial imprint fields that intersect the boundaries of the substrate 102.

[0060] The patterned layer may be formed to have a residual layer with a residual thickness (RLT) that is the minimum thickness of formable material 124 between substrate surface 130 and molding surface 112 in each imprint field. The patterned layer may also include one or more features, such as protrusions, that extend above the residual layer with a thickness. These protrusions correspond to recesses 114 in mesas 110.

[0061] Templates 2A is a diagram (not to scale) of a template 108 that may be used in one embodiment. The molding surface 112 may rest on a mesa 110 (identified by a dashed box in FIG. 2A). The mesa 110 is surrounded by a concave surface 244 on the front side of the template. The mesa 110 has a mesa height h T The mesa height h TThe mesa sidewall 246 connects the recessed surface 244 to the molding surface 112 of the mesa 110. The mesa sidewall 246 surrounds the mesa 110. In an embodiment where the mesa is rounded or has rounded corners, the mesa sidewall 246 refers to a single mesa sidewall that is a continuous wall without corners. In an embodiment, the mesa sidewall 246 may have one or more of the following profiles: vertical, angled, curved, stepped, sigmoidal, convex, or a combination of these profiles. FIG. 2B is a perspective view of the template 108 (not to scale) showing the mesa edge 210e. FIG. 2B illustrates that the intersection of the mesa sidewall 246 and the recessed surface 244 may have some curvature due to the process of etching away material forming the template precursor to form the mesa 110 on the template 108. The template 108 has a template width w as shown in FIGS. 2A-2B. T In an alternative embodiment, the template may have a rectangular planar shape with a template width w T is a characteristic width, and the planar shape of the template 108 can be a rectangle, a parallelogram, a polygon, or a circle, or some other shape. T is 10 to 200 mm.

[0062] Molding Process 3 is a flowchart of a method for manufacturing an article (device) that includes a molding process 300 performed by molding system 100. Molding process 300 may be used to form a pattern in formable material 124 on one or more imprint fields (also called pattern areas or shot areas). Molding process 300 may be repeatedly performed by molding system 100 on multiple substrates 102. Processor 140 may be used to control molding process 300.

[0063] In an alternative embodiment, the molding process 300 is used to flatten the substrate 102. In this case, the molding surface 112 may be featureless and may be the same size as the substrate 102 or larger.

[0064] The start of molding process 300 may include a template loading step in which a template transport mechanism loads template 108 onto template chuck 118. Molding process 300 may also include a substrate loading step in which processor 140 may load substrate 102 onto substrate chuck 104 with a substrate transport mechanism. The substrate may have one or more coatings and / or structures. The order in which template 108 and substrate 102 are loaded onto molding system 100 is not particularly limited, and template 108 and substrate 102 may be loaded sequentially or simultaneously.

[0065] In the positioning step, the processor 140 may cause one or both of the substrate positioning stage 106 and / or the dispenser positioning stage to move imprint field i (index i may be initially set to 1) of the substrate 102 to a fluid dispensing position beneath the fluid dispenser 122. The substrate 102 may be divided into N imprint fields, each identified by a mold field index i, where N is the number of mold fields and is a real positive integer such as 1, 10, 62, 75, 84, 100, etc. JPEG0007825498000001.jpg1239. In the dispensing step S302, the processor 140 may cause the fluid dispenser 122 to dispense (deliver) the formable material 124 onto the imprint field based on the droplet pattern. In one embodiment, the fluid dispenser 122 dispenses the formable material 124 as multiple droplets. The fluid dispenser 122 may include one nozzle or multiple nozzles. The fluid dispenser 122 may simultaneously eject the formable material 124 from one or more nozzles. The imprint field may be moved relative to the fluid dispenser 122 while the fluid dispenser is ejecting the formable material 124. Thus, the time at which some of the droplets land on the substrate may vary across the imprint field i. The dispensing step S302 may cause the processor 140 to dispense (dispense) the formable material 124 onto the imprint field based on the droplet pattern. In one embodiment, the fluid dispenser 122 dispenses the formable material 124 as multiple droplets. The fluid dispenser 122 may include one nozzle or multiple nozzles. The fluid dispenser 122 may simultaneously eject the formable material 124 from one or more nozzles. The imprint field may be moved relative to the fluid dispenser 122 while the fluid dispenser is ejecting the formable material 124. Thus, the time at which some of the droplets land on the substrate may vary across the imprint field i. The dispensing step S302 may cause the processor 140 to dispense a dispensing period T d It may be performed between

[0066] In one embodiment, during dispensing step S302, the moldable material 124 is dispensed onto the substrate 102 according to a droplet pattern. The droplet pattern may include one or more of the following information: locations at which to deposit the droplets of moldable material; volumes of the droplets of moldable material; types of moldable material; shape parameters of the droplets of moldable material; etc. In one embodiment, the droplet pattern may include only volumes of droplets that may be dispensed and locations at which to deposit the droplets.

[0067] After the droplet is dispensed, a contacting step S304 may commence, in which the processor 140 may cause one or both of the substrate positioning stage 106 and the template positioning stage to contact the molding surface 112 of the template 108 with the formable material 124 within a particular imprint field. d and a contact period T beginning with the initial contact between the molding surface 112 and the moldable material 124. contact In one embodiment, the template chuck 118 may be contacted for a period of time T contact, the template 108 is configured to bend such that only a portion of the molding surface 112 contacts a portion of the moldable material. contact ends when template 108 is no longer bent by template chuck 118. The degree to which molding surface 112 is curved relative to substrate surface 130 can be estimated with spread camera 136, which may be configured to record interference fringes due to reflectance from at least molding surface 112 and substrate surface 130. The greater the distance between adjacent interference fringes, the greater the degree to which molding surface 112 is curved.

[0068] During the fill step S306, the moldable material 124 spreads toward the edge of the imprint field and toward the mesa sidewalls 246. The edge of the imprint field may be defined by the mesa sidewalls 246. How the moldable material 124 spreads to fill the mesas may be observed via the field camera 136 and used to track the progress of the fluid front of the moldable material. In one embodiment, the fill step S306 is performed over a fill period T f The filling period T f The filling period T begins when the contacting step S304 is completed. f is the curing period T c In one embodiment, the fill period T f During this time, the back pressure and force applied to the template are kept substantially constant. Substantially constant in this context means that the back pressure and force fluctuations are within the control tolerance of the molding system 100, which may be less than 0.1% of the set point value.

[0069] In the curing step S308, the processor 140 determines the curing period T c During the curing period T, the radiation source 126 may be instructed to send a curing light pattern of actinic radiation through the template 108, the mesas 110, and the molding surface 112. The curing light pattern provides sufficient energy to cure (polymerize) the moldable material 124 beneath the molding surface 112. cis the period of time during which the moldable material under the template is subjected to actinic radiation having an intensity high enough to solidify (cure) the moldable material. In an alternative embodiment, the moldable material 124 is subjected to a curing period T c is exposed to a gelling illumination pattern of actinic radiation that does not cure the moldable material but increases the viscosity of the moldable material.

[0070] In the separation step S310, the processor 140 uses one or more of the substrate chuck 104, the substrate positioning stage 106, the template chuck 118, and the molding head 120 to perform a separation period T s During this time, the molding surface 112 of the template 108 is separated from the hardened moldable material on the substrate 102. If there are additional imprint fields to be imprinted, the process returns to step S302. In an alternative embodiment, more than one imprint field receives moldable material 124 during step S302, and the process returns to step S302 or S304.

[0071] In one embodiment, after molding process 300 is completed, additional semiconductor manufacturing processes are performed on substrate 102 in processing step S312 to create an article of manufacture (e.g., a semiconductor device). In one embodiment, each imprint field includes multiple devices.

[0072] Further semiconductor manufacturing processing in processing step S312 may include etching to transfer a relief image into the substrate that corresponds to the pattern in the patterned layer, or the inverse of that pattern. Further processing in processing step S312 may also include known steps and processes for manufacturing articles, including, for example, inspection, curing, oxidation, layering, deposition, doping, planarization, etching, formable material removal, dicing, bonding, packaging, mounting, circuit board assembly, etc. The substrate 102 may be processed to manufacture multiple articles (devices).

[0073] Layout of fields on the board The molding process 300 can be used in a step-and-repeat manner to mold a film with the template 108 into multiple fields across the substrate 102. The patterning areas (mesas 110) of the substrate 102 and template 108 can have different shapes and sizes. For example, the substrate 102 can have patternable areas that are circular, elliptical, polygonal, or some other shape. The mesas 110 are typically smaller than the substrate 102 and have a different shape than the substrate 102. The substrate 102 is divided into multiple full fields and multiple partial fields, as shown in FIGS. 4A-4B. The full fields are the same size as the mesas 110. The partial fields are fields on the edge of the substrate where the edge of the patternable area on the substrate intersects with the patterning area of ​​the mesa. These fields can be divided into multiple categories based on their shape and / or area relative to the full fields. A subset of these partial fields can be classified as small partial fields.

[0074] Small Part Field FIG. 4C is a diagram of a small portion field 448 on the substrate 102 in the coordinate system of the mesa 110. The mesa edge 210e is shown as a dotted line in FIG. 4C. FIG. 4C also shows the origin O of the mesa coordinate system at the center of the mesa 110. The edge 450 of the patternable area is shown set inward from the substrate edge. In one embodiment, the edge 450 of the patternable area may be set 0-3 mm inward from the substrate edge. The unpatterned area is shown in FIG. 4C as a diamond grid pattern. The width of the unpatterned area may be determined by edge treatment of the substrate 102, which may be processed to have rounded, beveled, or chamfered edges. The substrate 102 may also undergo multiple pre-treatments that cause the edges to have random, unpredictable patterns. The substrate 102 may also have orientation features such as notches or flat edges.

[0075] 4C , the extent of small portion field 448 is defined on two sides by mesa edge 210e, which intersects at vertex B. The extent of small portion field 448 is also defined by the arc of patternable area edge 450. The arc of patternable area edge 450 may be defined as part of a circle, ellipse, spline, polygon, or other geometric quantity that can be used to define the shape of patternable area edge 450. The arc of patternable area edge 450 intersects mesa edge 210e at vertices A and C.

[0076] initial contact point The molding process 300 is controlled using a number of parameters. In one embodiment, one of the process parameters used during the contacting step S302 is the initial contact point (ICP) of each field. The ICP is the point within the field where the template 108 first contacts the moldable material 124 on the substrate 102. The template 108 is curved by the template chuck 118 so that only a small portion of the template 108 contacts the moldable material 124 at the ICP. The template curvature is reduced as the template approaches the substrate until the template is flat, which is done to allow gas to escape during the contacting step S304.

[0077] In the case of a full field, the ICP is at the center of the full field. The ICP is a single point, but the actual initial contact area is, for example, 1-2 mm, when an imprint force of 0.1 N is detected during initial contact. 2For subfields, determining the ICP is more complicated, depending on the shape and area of ​​the subfield. For large subfields (90% to 99% of the full field), the ICP may be at the same point as the full field or somewhere within the initial contact area. For medium-sized subfields, the initial contact point may be determined by calculating the geometric center (GC) or centroid of the subfield. There are several methods that can be used to determine the GC. One way to estimate the GC is to use the meridian intersection method, as shown in Figure 4C. Another method is to approximate the edges of the subfield using a function. The function may be piecewise defined and continuous across the subfield. An integral may also be used to estimate the geometric center of the subfield. A third method for identifying the GC is to minimize the distance from the GC to the farthest corner of the subfield.

[0078] Applicant has found that GC works well for large and medium-sized fields, but not for small subfields. In one embodiment, a subfield may be classified as a small subfield 448 if it has two straight edges and one curved edge. In one embodiment, a subfield may be classified as a small subfield 448 if it has an area that is less than 30% of the full field. What is needed is a better way to determine ICP for these small subfields 448. In one embodiment, a subfield may be classified as a small subfield 448 if it has three straight edges and one curved edge, and the area of ​​the subfield is less than half the area of ​​the full field. In one embodiment, the ICP is not a GC for small subfields, and the ICP is a GC for all subfields not classified as small subfields.

[0079] A method for determining ICP for small subfields. 5 is a flowchart of an ICP determination process 500 for a small portion field 448. Process 500 may include a receiving step S514 in which a processor receives layout information. The layout information may include information about the template, information about the particular small portion field 448, and information about the edge 450 of the patternable area. Process 500 may include a chord determination step S516 in which a chord 652 (shown in FIG. 6A ) is determined, connecting the intersection vertices (A and C) of the small portion field 448 and the edge 450 of the patternable area. Chord 652 is a straight line connecting the two vertices (A and C) where mesa edge 210e intersects with edge 450 of the patternable area when template 108 is not bent.

[0080] The process 500 may include a bisector determination step S518 in which an orthogonal bisector 654 is determined, as shown in Figure 6B. The orthogonal bisector 654 is perpendicular to the chord 652 and bisects the chord 652 into two equal parts.

[0081] 6C, the process 500 may include an ICP range determination step S520 in which an ICP range on the orthogonal bisector 654 is determined. In one embodiment, the ICP range may have a width of 1, 3, or 5 mm. In one embodiment, the ICP range may have a width of 8-40% of the length of the orthogonal bisector 654 within the small partial field 448. The ICP range is inserted within 1-5 mm of the edge 450 of the patternable area, or within 10% of the length of the orthogonal bisector 654 within the small partial field 448. In one embodiment, ICP The extent is the width of the substrate edge exclusion zone (w ee The ICP region is inserted from the substrate edge by a width of (ICP=1-3 mm) plus a safety margin of 2-3 mm. In one embodiment, the width of the ICP region may be on the order of the ICP contact area.

[0082] The process 500 may include an ICP determination step S522 in which an ICP offset is determined, as shown in FIG. 6D. The ICP lies on the orthogonal bisector 654 and is within the ICP range. The ICP may be determined relative to the origin O of the mesa coordinate system. The ICP offset is determined by the ICP offset angle (θ) about the z-axis that passes through the center of the mesa. ICP ) and the magnitude of the ICP offset (M ICP ) The ICP offset can be described by two components (M ICP,x , and M ICP,y ) can also be described by the magnitude of the ICP offset (M ICP ) is the length of the vector connecting the origin O to the ICP. The ICP offset angle (θ ICP ) is the direction of the vector relative to the origin O in the mesa coordinate system.

[0083] Once the ICP is determined in ICP determination step S522, the ICP may be used during contact step S304 of molding process 300. Alternate embodiments may include a control condition determination step S524 in which control conditions are determined that allow template 108 to initially contact moldable material 124 at an ICP within the ICP range.

[0084] The control condition is the template back pressure (P) applied by the template chuck 118 to the backside of the template to cause the template 108 to bend. T ) for holding the template 108. FIG. 7A is a diagram of a pump connected to an exemplary template chuck 108 for holding the template 108, details of which are described in U.S. Patent Publication No. 2017 / 0165898-A1, which is incorporated herein by reference in its entirety. The template chuck 118 may include one or more vacuum portions for holding the template 108 and a chamber portion that may be used to curve the template 108, as illustrated in FIG. 7B. By increasing the pressure in the chamber above the ambient pressure of the molding surface 112, the template 108 will bend and the molding surface 112 will bend to a radius of curvature (R) at the ICP. T The template has a curvature that can be approximated by the radius of curvature RT is an approximation that represents the shape of the forming surface 112 at the ICP. A polynomial (e.g., a fourth-order polynomial) may be used to approximate the shape of the forming surface 112 in the region of the ICP at initial contact. A finite element model or other simulation model may be used to determine the shape of the forming surface under different control conditions.

[0085] The control condition is the tilt angle of the template (θ Tx rotation) and the tilt angle of the template (θ of the template around the y-axis Ty rotation), both of which involve controlling the template angle (θ ) relative to the substrate, as shown in FIG. 7C. T ={θ Tx , θ Ty}). Imprint head 120 may include multiple actuators that are used to position template 108 relative to substrate 102, and these multiple actuators may also be used to tilt molding surface 112 relative to substrate 102. Figure 7C shows the tilt of the reference surface (the front surface of the template chuck) relative to substrate 102, which is the same angle as molding surface 112 when unbent.

[0086] The control conditions may include a set of substrate chuck control values ​​supplied to the substrate chuck 104. The substrate chuck 104 may deform the shape of the substrate 102. As shown in FIG. 7D, the substrate chuck 104 may be a zone chuck that can supply different amounts of positive or negative pressure to different zones (e.g., outer zone 704a, first inner zone 704b, second inner zone 704c, etc.), thereby deforming the substrate by between 1 and 10 μm. For example, positive pressure may be supplied to the first inner zone 704b, while negative pressure may be supplied to the outer zone 704a and the second inner zone 704c. As with the template, the shape of the substrate surface 130 may be determined by the radius of curvature (R) of the substrate in the ICP. S) A polynomial (e.g., a fourth-order polynomial) may be used to approximate the shape of the forming surface 112 in the region of the ICP at initial contact. A finite element model or other simulation model may be used to determine the shape of the forming surface under different control conditions.

[0087] Control conditions (R T , R S , θ T 7E, may be adjusted in combination to control the position of the ICP over the small portion field 448. The control conditions may include additional parameters that describe the shape and orientation of the shaping surface 112 at the ICP and the substrate surface 130 at the ICP. The control parameters may include multiple control values ​​and / or trajectories (pressure, current, voltage, binary control signals, etc.) used to determine the shape and orientation of the shaping surface 112 at the ICP and the substrate surface 130 at the ICP.

[0088] The amount of pressure supplied to the chamber is controlled by the desired radius of curvature (R) during the ICP and filling step S306. T , R S), which may be determined based on the reduction of non-fill defects caused by gas not escaping during the fill step S306 for a given fill time. The control parameters have limits based on the mechanical properties of the template 108, substrate 102, and molding system 100. These limits prevent the concave surface 244 of the template from contacting the substrate surface 130 or the appliqué surrounding the substrate, and / or the molding surface 112 from contacting the appliqué surrounding the substrate. In alternative embodiments, the ICP is selected within the ICP range based on the limits of the control parameters. These limits may be determined experimentally and / or using finite element models or other simulation methods. For example, if both the template and substrate are flat, the template angle can be calculated using simple trigonometry, as described in Equation (1) below. Once the shape of the curved molding surface 112 and / or the shape of the curved substrate surface 130 are determined, coordinate transformations may be used to determine the limits. JPEG0007825498000002.jpg17170

[0089] Figure 8A shows the x-axis template tilt (θ ) of 0.19 mrad and 0.76 mrad. Tx ) relative to the magnitude of the ICP offset (M ICP ) changes with the pressure applied to the backside of the template. T ) is the magnitude of the ICP offset (M ICP ) is affected.

[0090] 9A-9G show the initial contact time (t IC ) over time. T ) is the initial contact time (t IC ) before the initial template bending pressure (P T1 ) and then the initial contact time (t IC ) after gas release template bending pressure (PT2 ) is then adjusted to the template back pressure (P T ) is adjusted until the template is flat against the substrate.

[0091] 9B and 9C show the initial contact time (t IC ) before the substrate back pressure (P Sa , P Sb , and P Sc ) is adjusted to bend the substrate, and then the pressure is adjusted to make the substrate and template parallel to each other during the curing step S308.

[0092] 9D is a timing diagram illustrating how the contact force that template 108 applies to moldable material 124 is adjusted during molding process 300. The contact force varies with the time of initial contact (t IC ), and then may be reduced to the final imprint force before the start of the curing step S308.

[0093] 9E-9F are timing diagrams illustrating how the template 108 and substrate 102 are oriented relative to each other. T ) is the initial contact time (t IC ) and then decreased during the curing step S308 until the template and substrate are parallel to each other.

[0094] FIG. 9G illustrates the template chuck position (z T ) is a timing diagram showing how the distance between the template chuck and the substrate is adjusted based on the time of initial contact (t IC ) until it contacts the moldable material 124. Then, during a curing step S308, the template and substrate are adjusted in position as they become less curved and more parallel to one another until the remaining thickness of moldable material between the molding surface 112 and the substrate surface 130 is small.

[0095] 10 is a flow chart illustrating the steps performed during contact step S304 for small portion field 448 in an exemplary embodiment. Contact step S304 begins with an initial contact time (t IC ), the control condition is applied at the first time (t a ) to the initial set of control conditions. The initial set of control conditions may include an initial control condition setting step S1004a in which the initial set of control conditions is adjusted to the template back pressure (P T ), template inclination and tilt (θ T ), first inner ring substrate pressure (P Sb ), outer ring substrate pressure (P Sa ), second inner ring substrate pressure (P Sc ), template chuck position (z T ) and the like. Tilt, template chuck position (z T ), and pressure can be determined using data such as those shown in FIGS. 8A-8B. IC ) should be adjusted to a value that controls the ICP at

[0096] First time (t a ) after the initial contact time (t IC The template chuck position is adjusted until the molding surface 112 contacts the moldable material 124 at the ICP at the time of initial contact (t IC ) and at the second time (t b ), in the back pressure adjustment step S1004b, the template chuck 118 (t a ) can be adjusted from the ICP template backpressure to the gas escape template backpressure. The gas escape template backpressure can be greater than the ICP template backpressure. The ICP template backpressure is selected to ensure that initial contact occurs properly, while the gas escape template backpressure is selected to ensure that gas can escape as the droplet of formable material spreads under the template as more of the template contacts the formable material.

[0097] Second time (tb ) and the third time (t c ), the tilt and inclination of the template are adjusted in a tilt adjusting step S1004c until the template chuck is substantially parallel to the substrate chuck. After the tilt is adjusted, a pressure adjusting step S1004d adjusts the tilt and inclination of the template until the template chuck is substantially parallel to the substrate chuck at a third time (t c ) and at the fourth time (t d ), the substrate chucking pressure and template chucking pressure are adjusted until both the template and the substrate are no longer bowed. In an alternative embodiment, the pressure adjusting step S1004d is performed simultaneously with the tilt adjusting step S1004c. In another alternative embodiment, the pressure adjusting step S1004d is performed before the tilt adjusting step S1004c.

[0098] Initial contact time (t IC ) and the fourth time (t d ), during a force adjustment step S1004e, the force that molding surface 112 applies to the moldable material is adjusted until it reaches the final force that can be applied during the curing step S308, as shown in FIG. IC ) and at the fourth time (t d ), during template position adjustment step S1004f, the position of the template chuck (z) relative to the substrate chuck is adjusted until a set residual thickness of the formable material is formed between the forming surface and the substrate surface. T ) is adjusted.

[0099] Further modifications and alternative embodiments of various aspects will be apparent to those skilled in the art in view of this description. Accordingly, this description is to be construed as illustrative only. It is to be understood that the forms shown and described herein are to be construed as example embodiments. Elements and materials may be substituted for those illustrated and described herein, parts and processes may be reversed, and certain features may be utilized independently, all as would be apparent to those skilled in the art after having the benefit of this description.

Claims

1. receiving information about a partial field of a substrate and an edge of a patternable area of ​​the substrate; determining a code connecting intersection vertices of said subfield and said edge; bisecting the chord and determining the coordinates of a bisector perpendicular to the chord; determining an initial contact point range on the bisector where the template and the moldable material on the substrate come into contact with each other; contacting the moldable material of the partial field with a template at an initial contact point within the initial contact point range; A method comprising:

2. 2. The method of claim 1, wherein the area of ​​the partial field is less than 30% of the area of ​​the full field of the substrate.

3. The method of claim 1 , further comprising determining control conditions that allow the template to initially contact the moldable material at the initial contact point.

4. The method of claim 3 , wherein the control conditions include pressure applied to a back surface of the template to cause the template to bend.

5. The method of claim 3 , wherein the controlled condition includes a tilt of the template relative to the substrate.

6. 4. The method of claim 3, wherein the control conditions include a set of control values ​​supplied to a substrate chuck, the substrate chuck deforming the shape of the substrate.

7. The method of claim 1 , wherein the edge of the patternable area is set inside an edge of a substrate.

8. the substrate is divided into a plurality of fields including a plurality of full fields and a plurality of partial fields, the plurality of partial fields being classified into a plurality of partial field categories; 2. The method of claim 1, further comprising determining an initial touch point for a particular subfield of the plurality of subfields based on a subfield category.

9. The method of claim 8 , wherein the subfield category is based on the shape of the subfield.

10. 10. A method for forming a film on a substrate with a plurality of fields, wherein a subset of the plurality of fields classified as partial fields is formed using the method of claim 1, comprising: adjusting control conditions so that after initial contact, the template contacts the entirety of the formable material in a particular field; exposing the formable material beneath the template to actinic radiation after the template and the substrate are substantially parallel to one another; separating the template from the moldable material; The method further comprising:

11. A method for producing an article from a substrate on which a film has been formed by the method of claim 10, comprising: processing the substrate; forming the article from the processed substrate; A method comprising:

12. 11. The method of claim 10, further comprising increasing the template back pressure used by the template chuck to bend the template after the initial contact.

13. 10. The method of claim 1, wherein the received information includes a layout of a plurality of fields.

14. one or more memories; one or more processors; The one or more processors: receiving information regarding a template, a partial field of a substrate, and an edge of a patternable area of ​​the substrate; determining a code connecting intersection vertices of the subfield and the edge; bisecting the chord and determining the coordinates of a bisector perpendicular to the chord; determining an initial contact point range on the bisector where the template and the moldable material on the substrate come into contact with each other; sending instructions to a molding system to contact a template with the moldable material of the partial field on the substrate at an initial contact point within the initial contact point range.

15. The system of claim 14 , wherein the one or more processors determine control conditions that allow the template to initially contact the moldable material at the initial contact point.

16. a template chuck that applies pressure to the back surface of the template to bend the template; The system of claim 15 , wherein the control condition includes the pressure.

17. a plurality of actuators for adjusting the tilt of the template relative to the substrate; The system of claim 15 , wherein the control condition includes the tilt.

18. Further, a substrate chuck is provided to deform the shape of the substrate, 16. The system of claim 15, wherein the control conditions include a set of control values ​​supplied to the substrate chuck.

19. the substrate is divided into a plurality of fields including a plurality of full fields and a plurality of partial fields, the plurality of partial fields being classified into a plurality of partial field categories; 15. The system of claim 14, wherein the one or more processors determine an initial touch point for a particular subfield of the plurality of subfields based on a subfield category.

20. 20. The system of claim 19, wherein the partial field category is based on the shape of the partial field.

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