Indication device

Abstract

Provided is a display device having a highly accurate light detection function. The display device has a light receiving device, a first light emitting device, and an insulating layer. The light receiving device has a first electrode, a light receiving layer, and a common electrode. The first light emitting device has a second electrode, a first EL layer, and a common electrode. The light receiving layer has a first function layer, a second function layer, and an active layer between the first function layer and the second function layer. The first function layer includes a first substance having a positive hole transport property. The second function layer includes a second substance having an electron transport property. An end section of the active layer, an end section of the first function layer, and an end section of the second function layer match or substantially match one another. The first EL layer has a third function layer, a fourth function layer, and a first light emitting layer between the third function layer and the fourth function layer. The third function layer includes a third substance having a positive hole transport property. The fourth function layer includes a fourth substance having an electron transport property. The insulating layer has a region in contact with a side surface of the light receiving layer and a side surface of the first EL layer.

Description

[Technical Field]

[0001] FIELD OF THE INVENTION One embodiment of the present invention relates to a display device and a manufacturing method of the display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, and manufacturing methods thereof. A semiconductor device refers to any device that can function by utilizing semiconductor characteristics. [Background technology]

[0003] In recent years, display devices have been used in a variety of devices, including information terminal devices such as smartphones, tablet devices, and laptop PCs, as well as television devices and monitor devices. In addition to displaying images, there is a demand for display devices that have various additional functions, such as a touch sensor function or a function for capturing fingerprint images for authentication.

[0004] As a display device, for example, a light-emitting device having a light-emitting device (also called a light-emitting element) has been developed. Light-emitting devices (also called an EL device or an EL element) that utilize the electroluminescence (EL) phenomenon have features such as being easily made thin and lightweight, being capable of responding quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are therefore applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device that uses an organic EL device (also called an organic EL element). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device having a light detection function and high definition.An object of one embodiment of the present invention is to provide a display device having a highly accurate light detection function.An object of one embodiment of the present invention is to provide a display device having a light detection function and low power consumption.An object of one embodiment of the present invention is to provide a display device having a light detection function and high reliability.An object of one embodiment of the present invention is to provide a novel display device.

[0007] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these can be extracted from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0008] One embodiment of the present invention is a display device including a light-receiving device, a first light-emitting device, and an insulating layer. The light-receiving device includes a first electrode, a light-receiving layer, and a common electrode stacked in this order. The first light-emitting device includes a second electrode, a first EL layer, and a common electrode stacked in this order. The light-receiving layer includes a first functional layer, a second functional layer, and an active layer between the first and second functional layers. The first functional layer includes a first substance having hole-transport properties. The second functional layer includes a second substance having electron-transport properties. Edges of the active layer, the first functional layer, and the second functional layer are aligned or substantially aligned with one another. The first EL layer includes a third functional layer, a fourth functional layer, and a first light-emitting layer between the third and fourth functional layers. The third functional layer includes a third substance having hole-transport properties. The fourth functional layer includes a fourth substance having electron-transport properties. The insulating layer has a region in contact with a side surface of the light-receiving layer and a side surface of the first EL layer.

[0009] In the above display device, the first material is preferably the same as the third material.

[0010] In the above display device, the second material is preferably the same as the fourth material.

[0011] In the above display device, the active layer preferably contains a fifth material, and the first light-emitting layer preferably contains a sixth material different from the fifth material.

[0012] In the above-described display device, the side surface of the light receiving layer is preferably perpendicular or approximately perpendicular to the surface on which the light receiving layer is formed.

[0013] In the above-described display device, the side surface of the first EL layer is preferably perpendicular or approximately perpendicular to the surface on which the first EL layer is formed.

[0014] In the above-described display device, it is preferable that an edge of the first light-emitting layer, an edge of the third functional layer, and an edge of the fourth functional layer coincide or approximately coincide with one another.

[0015] In the above-described display device, the thickness of the first light-emitting layer in the region in contact with the insulating layer is preferably thinner than the thickness of the first light-emitting layer in the region not in contact with the insulating layer.

[0016] In the above-described display device, the edge of the first light-emitting layer is preferably located inside the edge of the third functional layer and the edge of the fourth functional layer.

[0017] In the display device, the edge of the absorption layer is preferably located inside the edge of the first electrode, and the insulating layer preferably has an area in contact with the side surface of the absorption layer and the top and side surfaces of the first electrode.

[0018] In the display device, the edge of the first EL layer is preferably located inside the edge of the second electrode, and the insulating layer preferably has an area in contact with the side surface of the first EL layer and the top and side surfaces of the second electrode.

[0019] In the above-described display device, the active layer preferably has a region that overlaps with the first electrode via the first functional layer.

[0020] In the above-described display device, the active layer preferably has a region that overlaps with the first electrode via the second functional layer.

[0021] In the above-described display device, the first light-emitting layer preferably has a region overlapping with the second electrode via the third functional layer.

[0022] In the above-described display device, the first light-emitting layer preferably has a region overlapping with the second electrode via the third functional layer.

[0023] The display device preferably includes a second light-emitting device. The second light-emitting device includes a third electrode, a second EL layer, and a common electrode stacked in this order. The second EL layer includes a fifth functional layer, a sixth functional layer, and a second light-emitting layer between the fifth and sixth functional layers. The fifth functional layer includes a third substance. The sixth functional layer includes a fourth substance.

[0024] The display device preferably includes a second light-emitting device. The second light-emitting device includes a third electrode, a second EL layer, and a common electrode stacked in this order. The second EL layer includes a third functional layer, a fourth functional layer, and a second light-emitting layer between the third and fourth functional layers. [Effects of the Invention]

[0025] According to one embodiment of the present invention, a display device having a light detection function and high definition can be provided. According to one embodiment of the present invention, a display device having a highly accurate light detection function can be provided. According to one embodiment of the present invention, a display device having a light detection function and low power consumption can be provided. According to one embodiment of the present invention, a display device having a light detection function and high reliability can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0026] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0027] 1A to 1D are cross-sectional views showing examples of the configuration of a display device, and Fig. 1E is a diagram showing an example of a captured image. 2A to 2D are cross-sectional views showing examples of the configuration of a display device. 3A and 3B are cross-sectional views showing configuration examples of a display device. 4A and 4B are a top view and a cross-sectional view, respectively, illustrating an example of the configuration of a display device. 5A to 5D are cross-sectional views showing examples of the configuration of a display device. 6A to 6C are cross-sectional views showing examples of the configuration of a display device. 7A to 7C are cross-sectional views showing examples of the configuration of a display device. 8A to 8C are cross-sectional views showing examples of the configuration of a display device. 9A to 9C are cross-sectional views showing examples of the configuration of a display device. 10A to 10C are cross-sectional views showing examples of the configuration of a display device. 11A to 11C are cross-sectional views showing examples of the configuration of a display device. 12A to 12C are cross-sectional views showing configuration examples of a display device. 13A to 13C are cross-sectional views showing configuration examples of a display device. 14A to 14C are cross-sectional views showing examples of the configuration of a display device. 15A to 15C are cross-sectional views showing configuration examples of a display device. 16A to 16C are cross-sectional views showing configuration examples of a display device. 17A to 17C are cross-sectional views showing examples of the configuration of a display device. 18A to 18E are cross-sectional views showing an example of a method for manufacturing a display device. 19A to 19D are cross-sectional views showing an example of a method for manufacturing a display device. 20A to 20E are cross-sectional views showing an example of a method for manufacturing a display device. 21A to 21D are cross-sectional views showing an example of a method for manufacturing a display device. 22A and 22B are cross-sectional views showing an example of a method for manufacturing a display device. 23A to 23D are cross-sectional views showing an example of a method for manufacturing a display device. 24A to 24D are cross-sectional views showing an example of a method for manufacturing a display device. 25A to 25E are cross-sectional views showing an example of a method for manufacturing a display device. 26A and 26B are top views showing configuration examples of a display device. 27A and 27B are perspective views showing an example of a display device. FIG. 28 is a cross-sectional view showing an example of a display device. FIG. 29 is a cross-sectional view showing an example of a display device. FIG. 30 is a cross-sectional view showing an example of a display device. FIG. 31 is a cross-sectional view showing an example of a display device. FIG. 32 is a cross-sectional view showing an example of a display device. FIG. 33 is a cross-sectional view showing an example of a display device. FIG. 34 is a perspective view showing an example of a display device. Fig. 35A is a cross-sectional view showing an example of a display device, Fig. 35B and Fig. 35C are cross-sectional views showing an example of a transistor. FIG. 36 is a cross-sectional view showing an example of a display device. 37A to 37D are cross-sectional views showing configuration examples of light-emitting devices. 38A to 38G are cross-sectional views showing configuration examples of light emitting and receiving devices. 39A to 39E are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0028] Hereinafter, embodiments will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways and that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the following description of the embodiments.

[0029] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0030] In the figures described herein, the size of each component, the thickness of a layer, or the area may be exaggerated for clarity, and therefore are not necessarily limited to the scale.

[0031] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components and do not limit the number.

[0032] In this specification and the like, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" and "insulating layer" may be interchangeable with the terms "conductive film" and "insulating film."

[0033] In this specification and the like, the EL layer refers to a layer that is provided between a pair of electrodes of a light-emitting device and contains at least a light-emitting substance (also referred to as a light-emitting layer), or a laminate that contains a light-emitting layer.

[0034] In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) images etc. on a display surface, and therefore the display panel is one aspect of an output device.

[0035] In this specification, a display panel having a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package) attached to the substrate, or having an IC mounted on the substrate using a COG (Chip On Glass) method or the like, may be referred to as a display panel module, display module, or simply a display panel, etc.

[0036] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0037] A display device according to one embodiment of the present invention has a display portion including a plurality of pixels arranged in a matrix. Each pixel includes a light-emitting device and a light-receiving device (also referred to as a light-receiving element). The light-emitting device functions as a display device (also referred to as a display element). The display device according to one embodiment of the present invention has light-emitting devices arranged in a matrix in the display portion, and can display an image on the display portion. The display device according to one embodiment of the present invention has a function of detecting light using the light-receiving device.

[0038] In a display portion of a display device according to one embodiment of the present invention, light-receiving devices are arranged in a matrix. The display portion has an image display function and / or an imaging function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can use a light-emitting device as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required to be provided separately from the display device, and the number of components in an electronic device can be reduced.

[0039] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0040] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, resulting in a smaller and lighter electronic device.

[0041] When the light-receiving device is used as a touch sensor, the display device can detect the proximity or contact of an object using the light-receiving device.

[0042] In this specification, etc., a device fabricated using a metal mask or FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.

[0043] A more specific example will be described below with reference to the drawings.

[0044] <Configuration example 1> 1A to 1D are cross-sectional views illustrating structural examples of a display device according to one embodiment of the present invention.

[0045] The display device 100 shown in FIG. 1A has, between a substrate 50 and a substrate 59, a layer 53 having a light-receiving device and a layer 57 having a light-emitting device.

[0046] 1A shows a configuration in which red (R), green (G), and blue (B) light is emitted from layer 57 having a light-emitting device and incident on layer 53 having a light-receiving device. In FIG. 1A, arrows indicate the light emitted from layer 57 and the light incident on layer 53.

[0047] In this specification, the blue (B) wavelength range is from 400 nm to less than 490 nm, and blue (B) light has at least one emission spectrum peak in this wavelength range. The green (G) wavelength range is from 490 nm to less than 580 nm, and green (G) light has at least one emission spectrum peak in this wavelength range. The red (R) wavelength range is from 580 nm to less than 700 nm, and red (R) light has at least one emission spectrum peak in this wavelength range. Also, in this specification, the visible light wavelength range is from 400 nm to less than 700 nm, and visible light has at least one emission spectrum peak in this wavelength range. The infrared (IR) wavelength range is from 700 nm to less than 900 nm, and infrared (IR) light has at least one emission spectrum peak in this wavelength range.

[0048] In one embodiment of the present invention, a display portion of a display device includes a plurality of pixels arranged in a matrix. Each pixel includes one or more subpixels. Each subpixel includes a light-emitting device or a light-receiving device. For example, a pixel may include four subpixels. Specifically, a pixel may include a subpixel including a light-emitting device that emits red (R) light, a subpixel including a light-emitting device that emits green (G) light, a subpixel including a light-emitting device that emits blue (B) light, and a subpixel including a light-receiving device. The light-receiving device preferably has sensitivity in the wavelength range of visible light. Alternatively, the light-receiving device preferably has sensitivity in the wavelength ranges of visible light and infrared light.

[0049] The color combination of light emitted by the light-emitting device of a pixel is not limited to three types: red (R), green (G), and blue (B). The color combination of light emitted by the light-emitting device of a pixel can be, for example, three types: yellow (Y), cyan (C), and magenta (M). The color combination of light emitted by the light-emitting device of a pixel may be four or more types.

[0050] A pixel may have five or more sub-pixels. Specifically, one pixel may have four light-emitting devices, i.e., red (R), green (G), blue (B), and white (W), and a light-receiving device. Alternatively, one pixel may have four light-emitting devices, i.e., red (R), green (G), blue (B), and infrared (IR), and a light-receiving device. Note that light-receiving devices may be provided in all pixels or in some pixels. Note that one pixel may have multiple light-receiving devices. For example, one pixel may have three light-emitting devices, i.e., red (R), green (G), and blue (B), a light-receiving device sensitive to the wavelength range of visible light, and a light-receiving device sensitive to the wavelength range of infrared light.

[0051] The display device according to one embodiment of the present invention can have a function of detecting an object in contact with the display device. The object is not particularly limited and can be a living organism or an object. When the object is a living organism, the display device can have a function of detecting, for example, a finger or a palm. As shown in FIG. 1B , light emitted from the light-emitting device included in the layer 57 is reflected by a finger 52 in contact with the display device 100, and the light-receiving device included in the layer 53 detects the reflected light. This allows detection of the finger 52 touching the display device 100. That is, the display device according to one embodiment of the present invention can function as a touch sensor (also referred to as a direct touch sensor). Furthermore, as shown in FIG. 1C , light emitted from the light-emitting device included in the layer 57 is reflected by a finger 52 approaching the display device 100, and the light-receiving device included in the layer 53 detects the reflected light. This allows detection of the finger 52 approaching the display device 100. That is, the display device according to one embodiment of the present invention can have a function as a near-touch sensor (also referred to as a hover sensor, hover-touch sensor, non-contact sensor, or touchless sensor).

[0052] When the display device 100 has a function as a near-touch sensor, the finger 52 can be detected by approaching the display device 100 even if the finger 52 does not touch the display device 100. The display device 100 is preferably configured to be able to detect the finger 52 when the distance between the display device 100 and the finger 52 is, for example, in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. This configuration makes it possible to operate the display device 100 without the finger 52 directly touching it; in other words, it makes it possible to operate the display device 100 in a contactless (touchless) manner. This configuration reduces the risk of the display device 100 becoming dirty or scratched, or makes it possible to operate the display device 100 without the finger 52 directly touching dirt (e.g., dust, viruses, etc.) that may adhere to the display device 100.

[0053] A display device according to one embodiment of the present invention can capture an image of an object in contact with the display device. For example, the display device can detect a fingerprint of a finger 52. Fig. 1D is a schematic enlarged view of a contact area where a finger 52 is in contact with a substrate 59. Fig. 1D also shows an alternate arrangement of layers 57 having light-emitting devices and layers 53 having light-receiving devices.

[0054] A fingerprint is formed by concave and convex portions of finger 52. Therefore, the convex portions of the fingerprint are in contact with substrate 59 as shown in FIG.

[0055] Light reflected from a surface or interface can be classified as specular or diffuse. Specular reflected light is highly directional, with the angle of incidence and the angle of reflection matching, while diffuse reflected light is less directional, with its intensity less dependent on the angle. The diffuse reflection component is dominant in the light reflected from the surface of the finger 52. On the other hand, the specular reflection component is dominant in the light reflected from the interface between the substrate 59 and the atmosphere.

[0056] The intensity of light reflected by the contact or non-contact surface between the finger 52 and the substrate 59 and incident on the layer 53 located directly below them is the sum of specularly reflected light and diffusely reflected light. As described above, at the concave portions of the finger 52, the substrate 59 and the finger 52 do not come into contact, so specularly reflected light (indicated by the solid arrows) is dominant, whereas at the convex portions, they come into contact, so diffusely reflected light (indicated by the dashed arrows) from the finger 52 is dominant. Therefore, the intensity of light received by the light-receiving device included in the layer 53 located directly below the concave portions is higher than the intensity of light received by the light-receiving device included in the layer 53 located directly below the convex portions. Therefore, the fingerprint of the finger 52 can be captured using the light-receiving device.

[0057] The arrangement interval of the light-receiving devices in layer 53 is set to be smaller than the distance between two convex portions of a fingerprint, preferably the distance between adjacent convex and concave portions, so that a clear fingerprint image can be obtained. Since the distance between convex and concave portions of a human fingerprint is generally between 150 μm and 250 μm, the arrangement interval of the light-receiving devices is set to, for example, 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less. The smaller the arrangement interval, the better, but it can be set to, for example, 1 μm or more, 10 μm or more, or 20 μm or more.

[0058] FIG. 1E shows an example of a fingerprint image captured by a display device according to one embodiment of the present invention. In FIG. 1E, the outline of finger 52 is indicated by a dashed line in region 65, and the outline of contact portion 69 is indicated by a dashed line. In region 65, a fingerprint 67 with high contrast can be captured due to differences in the amount of light incident on the light-receiving device. Furthermore, fingerprint authentication can be performed using the captured fingerprint image. While an example of capturing a fingerprint using a finger as the target object has been described here, this embodiment of the present invention is not limited to this. For example, the display device can detect a palm in contact with or in proximity to the display unit. Furthermore, the display device can capture a palmprint, and palmprint authentication can be performed using the captured palmprint image.

[0059] As described above, in the display device of one embodiment of the present invention, the light-receiving device can detect light that is emitted from the light-emitting device, irradiated onto an object, and reflected by the object. Therefore, even in a dark place, it is possible to detect an object that is in contact with or close to the display unit. Furthermore, the display device can perform authentication such as fingerprint authentication and palm print authentication.

[0060] By providing the light receiving device in the display section, it is no longer necessary to attach a sensor externally to the display device, which reduces the number of components and allows for a compact and lightweight display device.

[0061] A substrate having heat resistance sufficient to withstand the formation of a light-emitting device and a light-receiving device can be used as the substrate 50. When an insulating substrate is used as the substrate 50, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.

[0062] In particular, it is preferable to use a substrate having a semiconductor circuit including semiconductor elements such as transistors formed on the aforementioned insulating substrate or semiconductor substrate as the substrate 50. The semiconductor circuit preferably comprises, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0063] <Configuration example 2> [Configuration Example 2-1] The configurations of a light-emitting device and a light-receiving device that can be applied to a display device according to one embodiment of the present invention will be described. A cross-sectional schematic diagram of a display device according to one embodiment of the present invention is shown in FIG. 2A. FIG. 2A shows the configurations of a light-emitting device 20R, a light-emitting device 20G, a light-emitting device 20B, and a light-receiving device 30PS that can be applied to the display device.

[0064] The light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B each have a function of emitting light (hereinafter also referred to as a light-emitting function). The light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B preferably use EL elements such as organic light-emitting diodes (OLEDs) or quantum-dot light-emitting diodes (QLEDs). Examples of light-emitting materials included in the EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. Note that TADF materials may be materials in which the singlet excited state and the triplet excited state are in thermal equilibrium. Such TADF materials have a short emission lifetime (excitation lifetime), which can suppress a decrease in efficiency in the high-brightness region of the light-emitting device.

[0065] The light-emitting device 20R has an electrode 21a, an EL layer 25R, and an electrode 23. The light-emitting device 20G has an electrode 21b, an EL layer 25G, and an electrode 23. The light-emitting device 20B has an electrode 21c, an EL layer 25B, and an electrode 23. In the light-emitting device 20R, the EL layer 25R sandwiched between the electrode 21a and the electrode 23 has at least a light-emitting layer. The light-emitting layer contains a light-emitting material that emits light, and light is emitted from the EL layer 25R by applying a voltage between the electrode 21a and the electrode 23. Similarly, the EL layer 25G has at least a light-emitting layer. The light-emitting layer contains a light-emitting material that emits light, and light is emitted from the EL layer 25G by applying a voltage between the electrode 21b and the electrode 23. The EL layer 25B has at least a light-emitting layer. The light-emitting layer contains a light-emitting material that emits light, and when a voltage is applied between the electrode 21c and the electrode 23, light is emitted from the EL layer 25B.

[0066] EL layer 25R, EL layer 25G, and EL layer 25B may each further include one or more of a layer containing a substance with high hole injection properties (hereinafter referred to as a hole injection layer), a layer containing a substance with high hole transport properties (hereinafter referred to as a hole transport layer), a layer containing a substance with high electron transport properties (hereinafter referred to as an electron transport layer), a layer containing a substance with high electron injection properties (hereinafter referred to as an electron injection layer), a carrier blocking layer, an exciton blocking layer, and a charge generating layer. The hole injection layer, hole transport layer, electron transport layer, electron injection layer, carrier blocking layer, exciton blocking layer, and charge generating layer can also be referred to as functional layers.

[0067] In this specification and the like, when describing matters common to light-emitting device 20R, light-emitting device 20G, and light-emitting device 20B, or when there is no need to distinguish between them, they may be simply referred to as light-emitting device 20. Similarly, when describing matters common to components distinguished by alphabets, such as EL layer 25R, EL layer 25G, and EL layer 25B, they may be described using symbols without the alphabets.

[0068] The light receiving device 30PS has a function of detecting light (hereinafter also referred to as a light receiving function). The light receiving device 30PS has a function of detecting visible light. The light receiving device 30PS is sensitive to visible light. It is more preferable that the light receiving device 30PS has a function of detecting visible light and infrared light. It is preferable that the light receiving device 30PS is sensitive to visible light and infrared light. For example, a pn-type or pin-type photodiode can be used as the light receiving device 30PS.

[0069] The light-receiving device 30PS has an electrode 21d, a light-receiving layer 35PS, and an electrode 23. The light-receiving layer 35PS, sandwiched between the electrode 21d and the electrode 23, has at least an active layer. The light-receiving device 30PS functions as a photoelectric conversion device, generating charges in response to light incident on the light-receiving layer 35PS and extracting the charges as a current. At this time, a voltage may be applied between the electrode 21d and the electrode 23. The amount of generated charges is determined based on the amount of light incident on the light-receiving layer 35PS.

[0070] The light-receiving layer 35PS may further include one or more of a hole-transport layer, an electron-transport layer, a layer containing a bipolar substance (a substance with high electron-transport and hole-transport properties), and a carrier-blocking layer. The light-receiving layer 35PS may include a layer containing a substance that can be used as a hole-injection layer. In the light-receiving device 30PS, this layer can function as a hole-transport layer. The light-receiving layer 35PS may also include a layer containing a substance that can be used as an electron-injection layer. In the light-receiving device 30PS, this layer can function as an electron-transport layer. Note that a substance having hole-injection properties can also be said to have hole-transport properties. A substance having electron-injection properties can also be said to have electron-transport properties. Therefore, in this specification and the like, a substance having hole-injection properties may be referred to as a substance having hole-transport properties. Similarly, a substance having electron-injection properties may also be referred to as a substance having electron-transport properties.

[0071] The active layer includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In particular, it is preferable to use an organic photodiode having a layer including an organic semiconductor as the light-receiving device 30PS. Organic photodiodes are easily made thin, lightweight, and large-area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices. Furthermore, using an organic semiconductor is preferable because the EL layer of the light-emitting device 20 and the light-receiving layer of the light-receiving device 30PS can be formed by the same method (e.g., vacuum deposition), allowing the use of common manufacturing equipment.

[0072] A display device according to one embodiment of the present invention preferably uses organic EL devices as the light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B, and an organic photodiode as the light-receiving device 30PS. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be built into a display device using an organic EL device. The display device according to one embodiment of the present invention has one or both of an imaging function and a sensing function in addition to a function of displaying an image.

[0073] Electrodes 21a, 21b, 21c, and 21d are provided on the same surface. FIG. 2A shows a configuration in which electrodes 21a, 21b, 21c, and 21d are provided on a substrate 50. The same material can be used for electrodes 21a, 21b, 21c, and 21d. Electrodes 21a, 21b, 21c, and 21d can be formed through the same process. For example, electrodes 21a, 21b, 21c, and 21d can be formed by processing a conductive film formed on substrate 50 into an island shape. Forming electrodes 21a, 21b, 21c, and 21d through the same process can improve the productivity of the display device.

[0074] The electrodes 21a, 21b, 21c, and 21d may be formed in different processes. The thicknesses of the electrodes 21a, 21b, 21c, and 21d may be different. By making the thicknesses of the electrodes 21a, 21b, 21c, and 21d different, they can be used as optical adjustment layers.

[0075] Electrode 21a, electrode 21b, electrode 21c, and electrode 21d can each be referred to as a pixel electrode. Electrode 23 is a layer common to light-emitting device 20R, light-emitting device 20G, light-emitting device 20B, and light-receiving device 30PS, and can be referred to as a common electrode. A conductive film that transmits visible light and infrared light is used for the pixel electrode and the common electrode that emits or receives light. A conductive film that reflects visible light and infrared light is preferably used for the electrode that does not emit or receive light.

[0076] 2A schematically illustrates a configuration in which electrodes 21a, 21b, 21c, and 21d function as anodes and electrode 23 functions as a cathode in each of light-emitting device 20R, light-emitting device 20G, light-emitting device 20B, and light-receiving device 30PS. To facilitate understanding of the orientation of the anode and cathode, FIG. 2A illustrates a circuit symbol for a light-emitting diode on the left side of light-emitting device 20R and a circuit symbol for a photodiode on the right side of light-receiving device 30PS. Furthermore, electrons are indicated by circles with a - (minus) sign, holes are indicated by circles with a + (plus) sign, and the flow directions of the electrons and holes are indicated by arrows.

[0077] In the light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B, the electrodes 21a, 21b, and 21c functioning as anodes are electrically connected to a first wiring that supplies a first potential. In the light-emitting device 20R, the light-emitting device 20G, the light-emitting device 20B, and the light-receiving device 30PS, the electrode 23 functioning as a cathode is electrically connected to a second wiring that supplies a second potential. The second potential is set to be lower than the first potential. In the light-receiving device 30PS, the electrode 21d functioning as an anode is electrically connected to a third wiring that supplies a third potential. Here, a reverse bias voltage is applied to the light-receiving device 30PS. In other words, the third potential is set to be lower than the second potential.

[0078] A specific example of the configuration shown in Fig. 2A is shown in Fig. 2B. In light-emitting device 20R, EL layer 25R has a first functional layer 27a, a light-emitting layer 41R, and a second functional layer 29a stacked in this order. In light-emitting device 20G, EL layer 25G has a first functional layer 27b, a light-emitting layer 41G, and a second functional layer 29b stacked in this order. In light-emitting device 20B, EL layer 25B has a first functional layer 27c, a light-emitting layer 41B, and a second functional layer 29c stacked in this order.

[0079] In the light-emitting device 20R, the configuration including the first functional layer 27a, the light-emitting layer 41R, and the second functional layer 29a provided between a pair of electrodes (electrode 21a and electrode 23) can function as a single light-emitting unit, and the configuration of the light-emitting device 20R may be referred to as a single structure in this specification, etc. The same applies to the light-emitting devices 20G and 20B.

[0080] The first functional layer 27a, the first functional layer 27b, and the first functional layer 27c are located on the side of the electrode 21a, the electrode 21b, and the electrode 21c, which function as anodes, in the light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B. The first functional layer 27a, the first functional layer 27b, and the first functional layer 27c can each be a hole transport layer or a hole injection layer. Alternatively, the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c can each have a stacked structure of a hole injection layer and a hole transport layer on the hole injection layer. Furthermore, the hole injection layer may have a stacked structure, and the hole transport layer may have a stacked structure. Alternatively, the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c may each include a substance having hole transport properties and a substance having hole injection properties.

[0081] The first functional layer 27a, the first functional layer 27b, and the first functional layer 27c can be made of the same material. The first functional layer 27a, the first functional layer 27b, and the first functional layer 27c can be formed through the same process. For example, the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c can be formed by processing films that will become the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c. Forming the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c through the same process can improve the productivity of the display device.

[0082] The second functional layer 29a, the second functional layer 29b, and the second functional layer 29c are located on the side of the electrode 23 functioning as a cathode in the light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B. The second functional layer 29a, the second functional layer 29b, and the second functional layer 29c can each be an electron transport layer or an electron injection layer. Alternatively, the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c can each have a stacked structure of an electron transport layer and an electron injection layer on the electron transport layer. Furthermore, the electron injection layer may have a stacked structure, or the electron transport layer may have a stacked structure. Alternatively, the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c may each include a substance having electron transport properties and a substance having electron injection properties.

[0083] The second functional layer 29a, the second functional layer 29b, and the second functional layer 29c can be made of the same material. Furthermore, the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c can be formed through the same process. For example, the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c can be formed by processing films that will become the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c. By forming the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c through the same process, the productivity of the display device can be improved.

[0084] As shown in FIG. 2B, in a light-receiving device 30PS, a light-receiving layer 35PS has a third functional layer 37PS, an active layer 43PS, and a fourth functional layer 39PS stacked in this order.

[0085] The third functional layer 37PS, located on the side of the electrode 21d that functions as the anode of the light-receiving device 30PS, can be a hole-transport layer. The hole-transporting substance contained in the third functional layer 37PS may be different from the hole-transporting substance contained in the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c. The third functional layer 37PS of the light-receiving device 30PS is preferably formed in a different process from the layers that constitute the light-emitting device 20 (e.g., the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c). Forming the third functional layer 37PS in a different process allows a material more suitable for the light-receiving device 30PS to be applied to the third functional layer 37PS. Similarly, a material more suitable for the light-emitting device 20 can be applied to the first functional layer 27.

[0086] The third functional layer 37PS can be made of the same material as the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c. The substance having hole transport properties contained in the third functional layer 37PS may be different from or the same as the substance having hole transport properties contained in the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c. The third functional layer 37PS may have a stacked structure.

[0087] When the substance having hole-transport properties contained in the third functional layer 37PS is different from the substance having hole-transport properties contained in the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c, it is possible to select a substance having hole-electron transport properties that is optimal for each device, which is preferable.On the other hand, when the substance having hole-transport properties contained in the third functional layer 37PS is the same as the substance having hole-transport properties contained in the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c, it is preferable because they can be manufactured using a common apparatus (for example, a common evaporation apparatus), which reduces manufacturing costs.

[0088] The fourth functional layer 39PS, located on the electrode 23 side that functions as the cathode of the light-receiving device 30PS, can be an electron transport layer. The electron-transporting substance contained in the fourth functional layer 39PS may be different from the electron-transporting substance contained in the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c. The fourth functional layer 39PS of the light-receiving device 30PS is preferably formed in a different process from the layers that constitute the light-emitting device 20 (e.g., the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c). Forming the fourth functional layer 39PS in a different process allows a material more suitable for the light-receiving device 30PS to be applied to the fourth functional layer 39PS. Similarly, a material more suitable for the light-emitting device 20 can be applied to the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c.

[0089] The fourth functional layer 39PS can be made of the same material as the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c. The substance having electron transport properties contained in the fourth functional layer 39PS may be different from or the same as the substance having electron transport properties contained in the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c. The fourth functional layer 39PS may have a stacked structure.

[0090] When the substance having electron transport properties contained in the fourth functional layer 39PS is different from the substance having electron transport properties contained in the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c, it is possible to select a substance having electron transport properties that is optimal for each device, which is preferable.On the other hand, when the substance having electron transport properties contained in the fourth functional layer 39PS is the same as the substance having electron transport properties contained in the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c, it is possible to manufacture them using a common apparatus (for example, a common evaporation apparatus), which is preferable because it is possible to reduce manufacturing costs.

[0091] The third functional layer 37PS may have a layer that functions as a hole injection layer in a light-emitting device, i.e., a layer containing a substance with high hole injection properties. The hole injection layer can function as a hole transport layer in a light-receiving device. The fourth functional layer 39PS may have a layer that functions as an electron injection layer in a light-emitting device, i.e., a layer containing a substance with high electron injection properties. The electron injection layer can function as an electron transport layer in a light-receiving device.

[0092] 2B and other figures, the EL layer 25R, the EL layer 25G, the EL layer 25B, and the light-receiving layer 35PS preferably do not have any common layers. Furthermore, the EL layer 25R, the EL layer 25G, the EL layer 25B, and the light-receiving layer 35PS preferably do not have any areas in contact with each other. In other words, the EL layer 25R, the EL layer 25G, the EL layer 25B, and the light-receiving layer 35PS are preferably separated.

[0093] The separation of the EL layers 25 of two adjacent light-emitting devices 20 can prevent leakage current from occurring between the light-emitting devices 20. In other words, it is possible to prevent a phenomenon in which a light-emitting device other than the desired one emits light (also known as crosstalk), thereby providing a display device with high display quality.

[0094] Since the light-receiving layer 35PS of the light-receiving device 30PS is separated from the EL layer 25 of the adjacent light-emitting device 20, it is possible to suppress leakage current (also called side leakage) from flowing from the light-emitting device 20 to the light-receiving device 30PS. This results in a highly accurate light receiving device 30PS with a high power to noise ratio.

[0095] In the display device of one embodiment of the present invention, side leakage between the light-emitting device 20 and the light-receiving device 30PS is suppressed, and therefore the distance between the light-emitting device 20 and the light-receiving device 30PS can be narrowed. That is, the proportion of the light-emitting device 20 and the light-receiving device 30PS in a pixel (hereinafter also referred to as the aperture ratio) can be increased. Furthermore, the pixel size can be reduced, and the resolution of the display device can be increased. Therefore, a display device having a light detection function and a high aperture ratio can be realized. Furthermore, a display device having a light detection function and high resolution can be realized.

[0096] The resolution of the light receiving device 30PS is 100 ppi or more, preferably 200 ppi or more, more preferably 300 ppi or more, more preferably 400 ppi or more, and even more preferably 500 ppi or more, and can be 2000 ppi or less, 1000 ppi or less, or 600 ppi or less, etc. In particular, by setting the resolution of the light receiving device 30PS to be 200 ppi or more and 600 ppi or less, and preferably 300 ppi or more and 600 ppi or less, the light receiving device 30PS can be suitably used for imaging fingerprints.

[0097] When fingerprint authentication is performed using the display device of one embodiment of the present invention, increasing the resolution of the light-receiving device 30PS enables, for example, highly accurate extraction of fingerprint minutia, thereby improving the accuracy of fingerprint authentication. Furthermore, a resolution of 500 ppi or higher is preferable because it complies with standards such as those of the National Institute of Standards and Technology (NIST). Assuming that the resolution of the light-receiving device is 500 ppi, the size per pixel is 50.8 μm, which is sufficient to capture the width of a fingerprint (typically, 300 μm to 500 μm).

[0098] [Configuration Example 2-2] Fig. 2C shows a configuration different from that shown in Fig. 2A and Fig. 2B. The display device shown in Fig. 2C schematically shows a configuration in which, in light-emitting device 20R, light-emitting device 20G, and light-emitting device 20B, electrodes 21a, 21b, and 21c function as anodes and electrode 23 functions as a cathode, and in light-receiving device 30PS, electrode 21d functions as a cathode and electrode 23 functions as an anode.

[0099] In the light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B, the electrodes 21a, 21b, and 21c functioning as anodes are electrically connected to a first wiring that supplies a first potential. The electrode 23 functioning as a cathode in the light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B and as an anode in the light-receiving device 30PS is electrically connected to a second wiring that supplies a second potential. The second potential is a potential lower than the first potential. In the light-receiving device 30PS, the electrode 21d functioning as a cathode is electrically connected to a third wiring that supplies a third potential. The third potential is a potential higher than the second potential.

[0100] 2C, electrode 23, which functions as a common electrode, can function as either an anode or a cathode in light-emitting device 20R, light-emitting device 20G, and light-emitting device 20B, and as the other anode or cathode in light-receiving device 30PS. This configuration reduces the potential difference between the pixel electrodes (electrodes 21a, 21b, and 21c) of light-emitting device 20 and the pixel electrode (electrode 21d) of light-receiving device 30PS, thereby suppressing leakage between the pixel electrodes (hereinafter also referred to as side leakage). This results in a light-receiving device 30PS with a high signal-to-noise ratio and high accuracy.

[0101] For example, the first potential (potential supplied to electrode 21a, electrode 21b, and electrode 21c) can be 12 V, the second potential (potential supplied to electrode 23) can be 0 V, and the third potential (potential supplied to electrode 21d) can be 4 V. With this configuration, it is possible to reduce the potential difference between the pixel electrodes (electrodes 21a, electrode 21b, and electrode 21c) of the light-emitting device 20 and the pixel electrode (electrode 21d) of the light-receiving device 30PS, and it is possible to suppress side leakage between the light-emitting device 20 and the light-receiving device 30PS.

[0102] Furthermore, the difference between the highest and lowest potentials of the first, second, and third potentials can be reduced, so that a display device with low power consumption can be obtained.

[0103] A specific example of the configuration shown in Fig. 2C is shown in Fig. 2D. The above descriptions can be referred to for the light emitting device 20R, the light emitting device 20G, and the light emitting device 20B, and therefore detailed descriptions thereof will be omitted.

[0104] The third functional layer 37PS, which is located on the side of the electrode 21d that functions as the cathode of the light-receiving device 30PS, can be an electron transport layer. The substance having electron transport properties contained in the third functional layer 37PS may be different from the substance having electron transport properties contained in the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c. The third functional layer 37PS can use the same material as that used in the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c. The substance having electron transport properties contained in the third functional layer 37PS may be the same as the substance having electron transport properties contained in the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c.

[0105] The fourth functional layer 39PS, which is located on the side of the electrode 23 that functions as the anode of the light-receiving device 30PS, can be a hole-transport layer. The substance having hole-transport properties contained in the fourth functional layer 39PS may be different from the substance having hole-transport properties contained in the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c. Note that the fourth functional layer 39PS can use the same material as that used in the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c. The substance having hole-transport properties contained in the fourth functional layer 39PS may be the same as the substance having hole-transport properties contained in the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c.

[0106] The third functional layer 37PS may have a layer that functions as an electron injection layer in the light-emitting device, i.e., a layer containing a substance with high electron injection properties. The fourth functional layer 39PS may have a layer that functions as a hole injection layer in the light-emitting device, i.e., a layer containing a substance with high hole injection properties.

[0107] In the present embodiment, the light-emitting device 20 is configured such that the electrodes 21a, 21b, and 21c function as anodes and the electrode 23 functions as a cathode. However, this is not a limitation of the present invention. The light-emitting device 20 may also be configured such that the electrodes 21a, 21b, and 21c function as cathodes and the electrode 23 functions as an anode. In this case, the first functional layer 27a, 27b, and 27c may be one or both of an electron transport layer and an electron injection layer. The second functional layer 29a, 29b, and 29c may be one or both of a hole transport layer and a hole injection layer.

[0108] [Configuration Example 2-3] A configuration different from that shown in FIG. 2B is shown in FIG. 3A. Light-emitting device 20R, light-emitting device 20G, and light-emitting device 20B shown in FIG. 3A have a first functional layer 27 instead of first functional layer 27a, first functional layer 27b, and first functional layer 27c, and a second functional layer 29 instead of second functional layer 29a, second functional layer 29b, and second functional layer 29c. First functional layer 27 is a layer common to light-emitting device 20R, light-emitting device 20G, and light-emitting device 20B, and can be referred to as a first common layer. Similarly, second functional layer 29 is a layer common to light-emitting device 20R, light-emitting device 20G, and light-emitting device 20B, and can be referred to as a second common layer.

[0109] 3A, the first functional layer 27 located on the side of the electrodes 21a, 21b, and 21c, which function as anodes of the light-emitting devices 20R, 20G, and 20B, can be a hole transport layer or a hole injection layer. Alternatively, the first functional layer 27 may have a stacked structure of a hole injection layer and a hole transport layer on the hole injection layer. The descriptions of the first functional layer 27a, the first functional layer 27b, and the first functional layer 27c can be referenced for the first functional layer 27, and therefore a detailed description thereof will be omitted.

[0110] The second functional layer 29 located on the electrode 23 side functioning as the cathode of the light-emitting device 20R, the light-emitting device 20G, and the light-emitting device 20B can be an electron transport layer or an electron injection layer. Alternatively, the second functional layer 29 may have a laminated structure of an electron transport layer and an electron injection layer on the electron transport layer. The descriptions of the second functional layer 29a, the second functional layer 29b, and the second functional layer 29c can be referenced for the second functional layer 29, and therefore a detailed description thereof will be omitted.

[0111] A third common layer may be provided between the electrode 23 and the second functional layer 29, and between the electrode 23 and the fourth functional layer 39PS. The third common layer may include, for example, an electron injection layer. Alternatively, the third common layer may have a laminated structure of an electron transport layer and an electron injection layer on the electron transport layer. The third common layer is a layer common to the light-emitting device 20R, the light-emitting device 20G, the light-emitting device 20B, and the light-receiving device 30PS. When an electron injection layer is used as the third common layer, the electron injection layer functions as an electron transport layer in the light-receiving device 30PS.

[0112] As shown in FIG. 3B, in the light-receiving device 30PS, the electrode 21d may function as a cathode, and the electrode 23 may function as an anode.

[0113] A third common layer may be provided between the electrode 23 and the second functional layer 29, and between the electrode 23 and the fourth functional layer 39PS. The above description of the third common layer can be referenced, so a detailed description thereof will be omitted. When an electron injection layer is used as the third common layer, the electron injection layer does not need to have a specific function in the light-receiving device 30PS.

[0114] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0115] In a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving device, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. The hole transport material is 10 -6 cm 2A material having a hole mobility of 1 / Vs or more is preferred. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. The hole transporting material is preferably a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton).

[0116] In a light-emitting device, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a light-receiving device, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material has a concentration of 1×10 -6 cm 2 A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of the electron-transporting material include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0117] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. A composite material containing an electron transport material and a donor material (electron donor material) can also be used as the material with high electron injection properties.

[0118] The electron injection layer may be formed from, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO x The electron injection layer may be formed of an alkali metal, an alkaline earth metal, such as cesium carbonate, or a compound thereof. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0119] Alternatively, the electron injection layer may be formed using an electron transporting material. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring can be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

[0120] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) of -3.6 eV to -2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0121] Examples of organic compounds with lone electron pairs include 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz). NBPhen has a higher glass transition temperature (Tg) and better heat resistance than BPhen.

[0122] For the charge generation layer, a material applicable to an electron injection layer, such as lithium, can be suitably used. For the charge generation layer, a material applicable to a hole injection layer can be suitably used. For the charge generation layer, a layer containing a hole transport material and an acceptor material (electron acceptor material) can be used. For the charge generation layer, a layer containing an electron transport material and a donor material can be used. By forming a charge generation layer having such a layer, an increase in driving voltage can be suppressed when light-emitting units are stacked.

[0123] The active layer includes a semiconductor. Examples of the semiconductor include an inorganic semiconductor such as silicon and an organic semiconductor including an organic compound. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), which is preferable because a common manufacturing device can be used.

[0124] The active layer is made of n-type semiconductor material, such as fullerene (C 60 , C 70Examples of electron-accepting organic semiconductor materials include fullerene derivatives and other fullerenes. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when the π-electron conjugation (resonance) spreads across a plane, as in benzene, the electron-donating (donor) properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving devices. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region compared to [6,6]-Phenyl-C 71 -butyric acid methyl ester (abbreviation: PC 70 BM), [6,6]-Phenyl-C 61 -butyric acid methyl ester (abbreviation: PC 60 BM), 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C 60 (abbreviated as ICBA) and others.

[0125] Examples of n-type semiconductor materials include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0126] An example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0127] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0128] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0129] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Further examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0130] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0131] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0132] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0133] The light-emitting device and the light-receiving device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device and the light-receiving device can be formed by a method such as vapor deposition (including vacuum vapor deposition), a transfer method, a printing method, an inkjet method, or a coating method.

[0134] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting or electron blocking materials. Furthermore, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0135] The active layer can be made of a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (PBDB-T) or a PBDB-T derivative, which functions as a donor. For example, an acceptor material can be dispersed in PBDB-T or a PBDB-T derivative.

[0136] A more specific example of the structure of the display device of one embodiment of the present invention will be described.

[0137] <Configuration example 3> [Configuration Example 3-1] 4A is a schematic top view illustrating a configuration example of a display device 100A of one embodiment of the present invention. The display device 100A includes a display portion in which a plurality of pixels 103 are arranged in a matrix and a connection portion 140 located outside the display portion.

[0138] Each pixel 103 has multiple sub-pixels. FIG. 4A shows an example in which pixel 103 has sub-pixels 120R, 120G, 120B, and 130. Sub-pixel 120R has a light-emitting device 110R that emits red light. Sub-pixel 120G has a light-emitting device 110G that emits green light. Sub-pixel 120B has a light-emitting device 110B that emits blue light. Sub-pixel 130 has a light-receiving device 150. In FIG. 4A, to easily distinguish between the devices, the light-emitting region of light-emitting device 110 is labeled with R, G, and B. Furthermore, the light-receiving region of light-receiving device 150 is labeled with PS.

[0139] 4B shows cross-sectional views corresponding to dashed dotted lines A1-A2 and D1-D2 in FIG. 4A. Light-emitting device 110R, light-emitting device 110G, light-emitting device 110B, and light-receiving device 150 are provided on substrate 101.

[0140] In this specification and the like, for example, when it is stated that "B is on top of A" or "B is below A," A and B do not necessarily have to have an area where they contact each other.

[0141] The light-emitting device 110R has an electrode 111a, a common electrode 123, and an EL layer 175R sandwiched between the electrode 111a and the common electrode 123. The EL layer 175R has a first functional layer 115a, a second functional layer 116a, and an emitting layer 112R sandwiched between the first functional layer 115a and the second functional layer 116a.

[0142] Light-emitting device 110G has electrode 111b, a common electrode 123, and an EL layer 175G sandwiched between electrode 111b and common electrode 123. EL layer 175G has first functional layer 115b, second functional layer 116b, and light-emitting layer 112G sandwiched between first functional layer 115b and second functional layer 116b.

[0143] Light-emitting device 110B has an electrode 111c, a common electrode 123, and an EL layer 175B sandwiched between electrode 111c and the common electrode 123. EL layer 175B has a first functional layer 115c, a second functional layer 116c, and an emitting layer 112B sandwiched between first functional layer 115c and second functional layer 116c.

[0144] The light-receiving device 150 has an electrode 111d, a common electrode 123, and a light-receiving layer 177 sandwiched between the electrode 111d and the common electrode 123. The light-receiving layer 177 has a third functional layer 155, a fourth functional layer 156, and an active layer 157 sandwiched between the third functional layer 155 and the fourth functional layer 156.

[0145] The electrodes 111a, 111b, 111c, and 111d function as pixel electrodes of the light-emitting device 110 or the light-receiving device 150, respectively.

[0146] The light emitting device 110R, the light emitting device 110G, and the light emitting device 110B can have the same configuration as the light emitting device 20R, the light emitting device 20G, and the light emitting device 20B described above. The light receiving device 150 can have the same configuration as the light receiving device 30PS described above.

[0147] The common electrode 123 is provided in common to the light-emitting device 110 and the light-receiving device 150. Elements other than the common electrode 123 that constitute the light-emitting device 110 and the light-receiving device 150 are not shared by the light-emitting device 110 and the light-receiving device 150 and are provided separately.

[0148] Specifically, electrodes 111a, 111b, 111c, and 111d are not shared by the light-emitting device 110 and the light-receiving device 150, but are provided separately. First functional layers 115a, 115b, and 115c are not shared by the light-emitting device 110, but are provided separately. Similarly, light-emitting layers 112R, 112G, and 112B are not shared by the light-emitting device 110, but are provided separately. Similarly, second functional layers 116a, 116b, and 116c are not shared by the light-emitting device 110, but are provided separately.

[0149] The third functional layer 155, the active layer 157, and the fourth functional layer 156 of the light-receiving device 150 are not shared with the light-emitting device 110 and are provided separately. By providing the third functional layer 155, the active layer 157, and the fourth functional layer 156 of the light-receiving device 150 separately from the light-emitting device 110, it is possible to prevent leakage current from flowing from the light-emitting device 110 to the light-receiving device 150. Therefore, the light-receiving device 150 can have a high signal-to-noise ratio and high accuracy.

[0150] The third functional layer 155 of the light-receiving device 150 is preferably formed in a process different from that of the functional layers of the light-emitting device 110 (e.g., the first functional layer 115a, the first functional layer 115b, and the first functional layer 115c). By forming the third functional layer 155 in a different process, a material more suitable for the light-receiving device 150 can be applied to the third functional layer 155. In other words, the third functional layer 155 can be configured to contain an organic compound different from the organic compound contained in the functional layers of the light-emitting device 110.

[0151] Similarly, the fourth functional layer 156 of the light-receiving device 150 is preferably formed in a different process from the functional layers of the light-emitting device 110 (e.g., the second functional layer 116a, the second functional layer 116b, and the second functional layer 116c). By forming the fourth functional layer 156 in a different process, a material more suitable for the light-receiving device 150 can be applied to the fourth functional layer 156. In other words, the fourth functional layer 156 can be configured to have an organic compound different from the organic compound of the functional layers of the light-emitting device 110.

[0152] The first functional layer 115 a , the first functional layer 115 b , the first functional layer 115 c , and the third functional layer 155 each have a region that contacts the upper surface of the electrode 111 .

[0153] A conductive film that is translucent to visible light is used for either the electrode 111 or the common electrode 123, and a conductive film that is reflective is used for the other. By making the electrode 111 translucent and the common electrode 123 reflective, the display device 100A can be a bottom-emission display device. On the other hand, by making the electrode 111 reflective and the common electrode 123 translucent, the display device 100A can be a top-emission display device. Note that by making both the electrode 111 and the common electrode 123 translucent, the display device 100A can also be a dual-emission display device.

[0154] The electrodes 111a, 111b, 111c, and 111d may have different film thicknesses and may be used as optical adjustment layers. By providing an optical adjustment layer, the light-emitting device 110 and the light-receiving device 150 can have a microcavity structure (a microresonator structure). When a microcavity structure is applied, for example, the electrode 111 can have a stacked structure of a conductive layer that is reflective to visible light and a light-transmitting conductive layer (also referred to as an optical adjustment layer) on the conductive layer. By varying the film thicknesses of the optical adjustment layers for the electrodes 111a, 111b, 111c, and 111d, the optical path lengths of the electrodes can be made different. A conductive film that is reflective and light-transmitting can be used for the common electrode 123.

[0155] By applying the microcavity structure, light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B can be light-emitting devices with high color purity by intensifying light of a specific wavelength, and light-receiving device 150 can be a light-receiving device with high sensitivity by intensifying light of a specific wavelength to be detected.

[0156] As shown in FIG. 4B , an insulating layer 182 is provided between two adjacent light-emitting devices 110 and between adjacent light-emitting devices 110 and light-receiving devices 150. Similarly, when two light-receiving devices 150 are adjacent to each other, an insulating layer 182 may be provided between the light-receiving devices. The insulating layer 182 preferably has regions in contact with the side surfaces of the EL layer 175R, the EL layer 175G, the EL layer 175B, the light-receiving layer 177, the electrode 111a, the electrode 111b, the electrode 111c, and the electrode 111d. Providing the insulating layer 182 can prevent impurities from penetrating into the interior from the side surfaces of the EL layer 175 and the light-receiving layer 177, resulting in a highly reliable display device. In particular, the insulating layer 182 preferably has regions in contact with the side surfaces of the light-emitting layer 112 and the active layer 157. Examples of such impurities include oxygen and water. On the insulating layer 182, a common electrode 123 is provided.

[0157] By providing the insulating layer 182 between adjacent light-emitting devices 110, the EL layer 175R, the EL layer 175G, and the EL layer 175R can be configured not to contact each other. This prevents current from flowing through two adjacent EL layers 175, which would otherwise cause unintended light emission. This allows for a display device with high contrast and high display quality.

[0158] Similarly, by providing an insulating layer 182 between the adjacent light-emitting device 110 and light-receiving device 150, the EL layer 175 and the light-receiving layer 177 can be configured not to be in contact with each other. This makes it possible to prevent leakage current from flowing from the adjacent light-emitting device 110 to the light-receiving device 150 (side leakage). Therefore, the light-receiving device 150 can have a high S / N ratio and high accuracy.

[0159] Between adjacent light-emitting devices 110, a step occurs between a region where the EL layer 175 is provided and a region where the EL layer 175 is not provided near the edge of the EL layer 175. In the display device of one embodiment of the present invention, the insulating layer 182 reduces the step, thereby improving the step coverage of the common electrode 123 formed thereon. Therefore, poor connection due to a step disconnection of the common electrode 123 can be suppressed. Alternatively, an increase in electrical resistance due to a local thinning of the thickness of the common electrode 123 due to the step can be suppressed.

[0160] In one embodiment of the present invention, by providing an insulating layer 182 between adjacent EL layers 175, the unevenness of the formation surface of the common electrode 123 can be reduced, thereby improving the step coverage of the common electrode 123 near the end of the EL layer 175 and achieving good conductivity of the common electrode 123.

[0161] Similarly, between adjacent light-emitting devices 110 and light-receiving devices 150, and between adjacent light-receiving devices 150, steps are generated between the regions where the light-receiving layer 177 is provided and the regions where the light-receiving layer 177 is not provided. By providing the insulating layer 182, the steps can be reduced, and the step coverage of the common electrode 123 formed thereon can be improved.

[0162] At the end of the EL layer 175, the step between the upper surface of the EL layer 175 and the upper surface of the insulating layer 182 is reduced, that is, the height of the upper surface of the EL layer 175 is made equal to or approximately equal to the height of the upper surface of the insulating layer 182, thereby improving the step coverage of the common electrode 123. Similarly, at the end of the light-receiving layer 177, the step between the upper surface of the light-receiving layer 177 and the upper surface of the insulating layer 182 is reduced, that is, the height of the upper surface of the light-receiving layer 177 is made equal to or approximately equal to the height of the upper surface of the insulating layer 182, thereby improving the step coverage of the common electrode 123.

[0163] 4B illustrates a configuration in which the height of the top surface of the insulating layer 182 is equal to or approximately equal to the height of the top surface of the EL layer 175 and the height of the top surface of the light-receiving layer 177; however, this is not a limitation of one embodiment of the present invention. The height of the top surface of the insulating layer 182 does not have to be equal to the height of the top surface of the EL layer 175 and the height of the top surface of the light-receiving layer 177. The height of the top surface of the insulating layer 182 may be higher or lower than the height of the top surface of the EL layer 175. The height of the top surface of the insulating layer 182 may be higher or lower than the height of the top surface of the light-receiving layer 177. Furthermore, the insulating layer 182 may have a region in contact with the top surface of the EL layer 175 or a region in contact with the top surface of the light-receiving layer 177.

[0164] The heights of the upper surfaces of the EL layer 175R, the EL layer 175G, the EL layer 175B, and the light-receiving layer 177 may be different from one another. Furthermore, the height of the upper surface of the insulating layer 182 may be different at each of the end portions of the EL layer 175R, the end portions of the EL layer 175G, the end portions of the EL layer 175B, and the end portions of the light-receiving layer 177. For example, the height of the upper surface of the EL layer 175R may be higher than the height of the upper surface of the insulating layer 182 at the end portions of the EL layer 175R; the height of the upper surface of the EL layer 175G may be higher than the height of the upper surface of the insulating layer 182 at the end portions of the EL layer 175G; the height of the upper surface of the EL layer 175B may be the same or approximately the same as the height of the upper surface of the insulating layer 182 at the end portions of the EL layer 175B; and the height of the upper surface of the light-receiving layer 177 may be lower than the height of the upper surface of the insulating layer 182 at the end portions of the light-receiving layer 177.

[0165] The insulating layer 182 can have a stacked structure of an insulating layer 182a and an insulating layer 182b on the insulating layer 182a. The insulating layer 182a preferably has a region in contact with the side surface of the EL layer 175 and the side surface of the light-receiving layer 177. The insulating layer 182a preferably has a region in contact with the side surface of the electrode 111. The insulating layer 182b is provided on the insulating layer 182a. The insulating layer 182b is provided on and in contact with the insulating layer 182a so as to fill the recesses of the insulating layer 182a in a cross-sectional view.

[0166] The insulating layer 182a functions as a protective insulating layer for the EL layer 175 and the light-receiving layer 177. The insulating layer 182a preferably has a barrier property against at least one of oxygen and water. By providing the insulating layer 182a, it is possible to prevent oxygen, water, or their constituent elements from penetrating into the interior from the side surfaces of the EL layer 175 and the light-receiving layer 177, thereby making it possible to provide a highly reliable display device. It is preferable that the insulating layer 182a particularly covers the side surfaces of the light-emitting layer 112 and the active layer 157.

[0167] In a cross-sectional view, if the width (film thickness) of the insulating layer 182a in a region in contact with the side surface of the EL layer 175 or the light-receiving layer 177 is large, the gap between the EL layer 175 and the light-receiving layer 177 will be large, which may result in a low aperture ratio. Furthermore, if the width (film thickness) of the insulating layer 182a is small, the effect of suppressing the intrusion of oxygen, water, or their constituent elements into the interior from the side surface of the EL layer 175 or the light-receiving layer 177 may be reduced. The width (film thickness) of the insulating layer 182a in a region in contact with the side surface of the EL layer 175 or the light-receiving layer 177 is preferably 3 nm to 200 nm, more preferably 3 nm to 150 nm, even more preferably 5 nm to 150 nm, still more preferably 5 nm to 100 nm, even more preferably 10 nm to 100 nm, and even more preferably 10 nm to 50 nm. By setting the width (film thickness) of the insulating layer 182a within the above range, a display device having a high aperture ratio and high reliability can be obtained.

[0168] The insulating layer 182a can be an insulating layer containing an inorganic material. For the insulating layer 182a, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon oxide, silicon oxynitride, silicon nitride, silicon nitride oxide, silicon nitride oxide, or the like can be used as a single layer or a stacked layer. Aluminum oxide is particularly preferable because it has a high etching selectivity with respect to the EL layer 175 and has a function of protecting the EL layer 175 in the formation of the insulating layer 182a, which will be described later. In particular, by using an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by an ALD method as the insulating layer 182a, a film with few pinholes can be obtained, and the insulating layer 182a can have an excellent function of protecting the EL layer 175 and the light-receiving layer 177.

[0169] In this specification, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0170] The insulating layer 182a can be formed by sputtering, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), atomic layer deposition (ALD), etc. The insulating layer 182a can be preferably formed by ALD, which has good coverage.

[0171] The insulating layer 182b provided on the insulating layer 182a fills recesses in the insulating layer 182a and improves the flatness of the insulating layer 182. By improving the flatness of the insulating layer 182, the step coverage of the common electrode 123 formed thereon can be improved. An insulating layer containing an organic material can be suitably used as the insulating layer 182b. For example, the insulating layer 182b can be made of one or more of acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 182b can be made of a photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material. Photoresist can also be used as the photosensitive resin.

[0172] By using a photosensitive resin for the insulating layer 182b, the insulating layer 182b can be formed simply by exposure and development processes. Alternatively, the insulating layer 182b may be formed using a negative photosensitive resin (e.g., a resist material). When an organic insulating layer is used as the insulating layer 182b, it is preferable to use a material that absorbs visible light. Using a material that absorbs visible light for the insulating layer 182b allows the insulating layer 182b to absorb light emitted from the EL layer 175, thereby suppressing light (stray light) that may leak to the adjacent EL layer 175. This allows for a display device with high display quality. Similarly, this allows for suppressing light (stray light) that may leak from the EL layer 175 to the adjacent light-receiving layer 177. This allows for a display device with a high signal-to-noise ratio and a high-precision light-receiving device 150.

[0173] The insulating layer 182b may be made of a colored material (e.g., a material containing a black pigment) to block stray light from adjacent pixels and suppress color mixing. Alternatively, a reflective film (e.g., a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.) may be provided between the insulating layer 182a and the insulating layer 182b to reflect light emitted from the light-emitting layer and improve light extraction efficiency.

[0174] The upper surface of insulating layer 182b is preferably as flat as possible, but the surface may have a gently curved shape. The upper surface of insulating layer 182b may be, for example, convex, concave, or flat. Alternatively, the upper surface of insulating layer 182b may have a corrugated shape with concave and convex portions, as shown in FIG. 5A.

[0175] The insulating layer 182a can be provided between the EL layer 175 and the light-receiving layer 177 and the insulating layer 182b, so that they do not come into contact with each other. If the EL layer 175 and the light-receiving layer 177 come into contact with the insulating layer 182b, the EL layer 175 and the light-receiving layer 177 may be dissolved by a component (e.g., an organic solvent) contained in the insulating layer 182b. By providing the insulating layer 182a, the side surfaces of the EL layer 175 and the light-receiving layer 177 can be protected. Note that it is also possible to provide only one of the insulating layers 182a and 182b, i.e., to provide only one of the insulating layers 182a and 182b. For example, as shown in FIG. 5B, it is also possible to provide no insulating layer 182b.

[0176] A protective layer 125 is provided on the common electrode 123. The protective layer 125 has a function of preventing impurities such as water from diffusing from above into each light-emitting device.

[0177] The protective layer 125 can have a single-layer structure or a stacked-layer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 125 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0178] The protective layer 125 may also be a laminated film of an inorganic insulating film and an organic insulating film. For example, a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This allows the upper surface of the organic insulating film to be flat, improving the coverage of the inorganic insulating film thereon and enhancing the barrier properties. Furthermore, since the upper surface of the protective layer 125 is flat, when a structure (e.g., a color filter, a touch sensor electrode, a lens array, etc.) is provided above the protective layer 125, the influence of uneven shapes caused by the structure below can be reduced, which is preferable.

[0179] The connection portion 140 has a common electrode 123 and an electrode 111p electrically connected to the common electrode 123. The connection portion 140 can be called a cathode contact portion. The electrode 111p can be made of the same material as the electrodes 111a, 111b, 111c, and 111d. The electrode 111p can be formed through the same process as the electrodes 111a, 111b, 111c, and 111d. A protective layer 125 is provided to cover the common electrode 123.

[0180] 4B, an insulating layer 182 may be provided to surround the connection portion 140. The insulating layer 182 preferably has a region in contact with the side surface of the electrode 111p. A common electrode 123 is provided on the insulating layer 182.

[0181] 4A shows an example in which the connection unit 140 is located on the right side of the display unit in top view, but the location of the connection unit 140 is not particularly limited. The connection unit 140 only needs to be provided in at least one location on the upper, right, left, or lower side of the display unit in top view, and may be provided so as to surround all four sides of the display unit. Furthermore, the connection unit 140 may be singular or plural.

[0182] The connection portion 140 can be provided along the outer periphery of the display portion. For example, the connection portion 140 may be provided along one side of the outer periphery of the display portion, or may be provided across two or more sides of the outer periphery of the display portion. Furthermore, the shape of the top surface of the connection portion 140 is not particularly limited. When the top surface shape of the display portion is rectangular, the top surface shape of the connection portion 140 can be, for example, a strip shape, an L-shape, a square bracket shape, or a square shape.

[0183] 4B, 5A, and 5B show examples in which the edge of the EL layer 175 and the edge of the light-receiving layer 177 each coincide or approximately coincide with the edge of the electrode 111, but this embodiment of the present invention is not limited to this. The edge of the EL layer 175 and the edge of the light-receiving layer 177 do not have to coincide with the edge of the electrode 111. As shown in FIG. 5C, the edge of the EL layer 175 and the edge of the light-receiving layer 177 may each be located inside the edge of the electrode 111. As shown in FIG. 5D, the edge of the EL layer 175 and the edge of the light-receiving layer 177 may each be located outside the edge of the electrode 111.

[0184] In this specification, "edges that coincide or approximately coincide" means that, when viewed from above, at least a portion of the contours of stacked layers overlap. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the contour of the upper layer may be located inside the contour of the lower layer, or the contour of the upper layer may be located outside the contour of the lower layer. In these cases, the term "edges that coincide or approximately coincide" is also used.

[0185] [Configuration Example 3-2] Fig. 6A shows a configuration different from that shown in Fig. 5D. Light-emitting device 110R, light-emitting device 110G, light-emitting device 110B, and light-receiving device 150 shown in Fig. 6A differ from the configuration shown in Fig. 5D mainly in that the side surfaces of electrode 111a, electrode 111b, electrode 111c, electrode 111d, and electrode 111p each have a tapered shape.

[0186] In this specification, the term "tapered shape" refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface is less than 90 degrees.

[0187] An enlarged view of region P indicated by a dashed dotted line in Figure 6A is shown in Figure 6B, and an enlarged view of region Q is shown in Figure 6C. Figure 6B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 6C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0188] Preferably, the side surfaces of electrodes 111a, 111b, 111c, 111d, and 111p each have a tapered shape. The taper angles of electrodes 111a, 111b, 111c, 111d, and 111p are each preferably less than 90 degrees, more preferably 80 degrees or less, even more preferably 70 degrees or less, and even more preferably 50 degrees or less. By having the side surfaces of electrodes 111a, 111b, 111c, 111d, and 111p each have a tapered shape, the step coverage of layers formed thereon (e.g., first functional layer 115 and third functional layer 155) is improved, and defects such as step discontinuities or voids in the layers can be suppressed.

[0189] As shown in FIG. 6B , in the light-emitting device 110B, the edges of the first functional layer 115c, the light-emitting layer 112B, and the second functional layer 116c are aligned or substantially aligned with one another. In other words, the top surface shapes of the first functional layer 115c, the light-emitting layer 112B, and the second functional layer 116c are aligned or substantially aligned with one another. For example, the first functional layer 115c, the light-emitting layer 112B, and the second functional layer 116c can be formed by processing the film that will become the first functional layer 115c, the film that will become the light-emitting layer 112B, and the film that will become the second functional layer 116c using the same mask. This configuration increases the area of ​​the light-emitting layer 112B, thereby increasing the area of ​​the light-emitting region of the light-emitting device 110B. In other words, a display device with a high aperture ratio can be achieved.

[0190] 6C , in the light-emitting device 110R, the end of the first functional layer 115a, the end of the light-emitting layer 112R, and the end of the second functional layer 116a are aligned or substantially aligned with one another. In other words, the top surface shapes of the first functional layer 115a, the light-emitting layer 112R, and the second functional layer 116a are aligned or substantially aligned with one another. For example, the first functional layer 115, the light-emitting layer 112, and the second functional layer 116 can be formed by processing the film that will become the first functional layer 115, the film that will become the light-emitting layer 112, and the film that will become the second functional layer 116 using the same mask. The same applies to the light-emitting device 110G.

[0191] As shown in FIG. 6B , in the light-receiving device 150, the end of the third functional layer 155, the end of the active layer 157, and the end of the fourth functional layer 156 are aligned or substantially aligned with one another. In other words, the top surface shapes of the third functional layer 155, the active layer 157, and the fourth functional layer 156 are aligned or substantially aligned with one another. For example, the third functional layer 155, the active layer 157, and the fourth functional layer 156 can be formed by processing the film that becomes the third functional layer 155, the film that becomes the active layer 157, and the film that becomes the fourth functional layer 156 using the same mask. This configuration increases the area of ​​the active layer 157, thereby increasing the area of ​​the light-receiving region of the light-receiving device 150. In other words, a display device with high-sensitivity light-receiving function can be obtained.

[0192] In this specification, the phrase "top surface shapes that match or roughly match" refers to the overlap of at least a portion of the contours between stacked layers. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, the phrase "top surface shapes that match or roughly match" also applies.

[0193] As shown in FIG. 6B, the light-receiving layer 177 of the light-receiving device 150 preferably does not have a layer in common with the EL layer 175B of the light-emitting device 110B, and preferably does not have a region in contact with the EL layer 175B. In other words, the light-receiving layer 177 is preferably separated from the EL layer 175B. Note that FIG. 6B shows the light-emitting device 110B as the light-emitting device adjacent to the light-receiving device 150, but this is not limiting. The light-receiving layer of the light-receiving device is preferably separated from the EL layer of the light-emitting device adjacent to the light-receiving device. Note that, similarly, when two light-receiving devices are adjacent to each other, the light-receiving layer of one light-receiving device is preferably separated from the light-receiving layer of the other light-receiving device.

[0194] As shown in FIG. 6C, EL layer 175G of light-emitting device 110G preferably does not share any layers with EL layer 175R of light-emitting device 110R and does not have any region in contact with EL layer 175R. In other words, EL layer 175G is preferably separated from EL layer 175R. Note that FIG. 6C shows light-emitting device 110R as the light-emitting device adjacent to light-emitting device 110G, but this is not limiting. The EL layer of a light-emitting device is preferably separated from the EL layer of the light-emitting device adjacent to the light-emitting device.

[0195] 6B, in the light-receiving device 150, the side surface of the third functional layer 155 is preferably perpendicular or approximately perpendicular to the surface on which it is to be formed. For example, the angle θ between the side surface of the third functional layer 155 and the surface on which it is to be formed (here, the substrate 101) is 155 is preferably 60 degrees or more and 90 degrees or less.

[0196] 6B, in the light-emitting device 110B, the side surface of the first functional layer 115c is preferably perpendicular or approximately perpendicular to the surface on which the layer is to be formed. For example, the angle θ between the side surface of the first functional layer 115c and the surface on which the layer is to be formed (here, the substrate 101) is 115c is preferably 60 degrees or more and 90 degrees or less.

[0197] 6C, in the light-emitting device 110R, the side surface of the first functional layer 115a is preferably perpendicular or approximately perpendicular to the surface on which the layer is to be formed. For example, the angle θ between the side surface of the first functional layer 115a and the surface on which the layer is to be formed (here, the substrate 101) is 115a is preferably 60 degrees or more and 90 degrees or less. In the light-emitting device 110G, the side surface of the first functional layer 115b is preferably perpendicular or approximately perpendicular to the surface on which the layer is to be formed. For example, the angle θ between the side surface of the first functional layer 115b and the surface on which the layer is to be formed (here, the substrate 101) is 115b is preferably 60 degrees or more and 90 degrees or less.

[0198] Light-emitting layer 112R, light-emitting layer 112G, and light-emitting layer 112B can each be formed using FMM. Light-emitting layer 112 formed using FMM may have a thinner thickness closer to the end. As shown in FIG. 6B, in light-emitting device 110B, the thickness TE of light-emitting layer 112B at the end 112B is the film thickness TC of the region inside the edge 112B Similarly, as shown in FIG. 6C, in light-emitting device 110R, the thickness TE 112R is the film thickness TC of the region inside the edge 112R In the light-emitting device 110G, the thickness TE of the light-emitting layer 112G at the edge 112G is the film thickness TC of the region inside the edge 112G The thickness TE of the light-emitting layer 112 at the edge may be thinner. 112R , film thickness TE 112G , and film thickness TE 11 2B can be said to be the film thickness of the light emitting layer 112 in the region where the light emitting layer 112 and the insulating layer 182 are in contact with each other. 112R , film thickness TC 112G , and film thickness TC 112B can be said to be the film thickness of the light emitting layer 112 in the region where the light emitting layer 112 and the insulating layer 182 do not contact each other.

[0199] The film thicknesses of light-emitting layer 112R, light-emitting layer 112G, and light-emitting layer 112B may be different from one another. While Fig. 6A and other figures show an example in which light-emitting layer 112R is thick and light-emitting layer 112B is thin, the relationship in magnitude between the film thicknesses of light-emitting layer 112R, light-emitting layer 112G, and light-emitting layer 112B is not limited to this. Similarly, the relationship in magnitude between the film thickness of active layer 157 and the film thicknesses of light-emitting layer 112R, light-emitting layer 112G, and light-emitting layer 112B is not particularly limited.

[0200] The insulating layer 182 preferably has regions in contact with the side surfaces of the EL layer 175 and the light-receiving layer 177. By providing the insulating layer 182 so as to be in contact with the EL layer 175 and the light-receiving layer 177, the island-shaped EL layer 175 and the light-receiving layer 177 are fixed or bonded by the insulating layer 182. This prevents the EL layer 175 and the light-receiving layer 177 from peeling off. This improves the reliability of the light-emitting device 110 and the light-receiving device 150. Furthermore, this improves the manufacturing yield of the light-emitting device 110 and the light-receiving device 150.

[0201] The height of the upper surface of the insulating layer 182 preferably coincides with or approximately coincides with the height of the upper surface of the end portion of the EL layer 175 and the height of the upper surface of the end portion of the light-receiving layer 177. This makes it possible to make the surface on which the common electrode 123 is formed flatter, thereby preventing connection defects due to step disconnections in the common electrode 123. Alternatively, it is possible to prevent the film thickness of the common electrode 123 from becoming locally thin due to steps, which would result in an increase in electrical resistance. Note that the upper surface of the insulating layer 182 preferably has a flat shape, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.

[0202] The height of the upper surface of insulating layer 182 may be higher or lower than the height of the upper surface at the end of EL layer 175 and the height of the upper surface at the end of light-receiving layer 177. It is preferable that insulating layer 182 covers at least the side surfaces of light-emitting layer 112R and active layer 157. That is, it is preferable that the height of the upper surface of insulating layer 182 is higher than the height of the upper surface at the end of light-emitting layer 112R and the height of the upper surface at the end of active layer 157. By having insulating layer 182 cover the side surfaces of light-emitting layer 112R and active layer 157, it is possible to suppress diffusion of impurities into light-emitting layer 112R and active layer 157.

[0203] 6A and other drawings illustrate a configuration in which the edge of the EL layer 175 in the light-emitting device 110 is located outside the edge of the electrode 111, but this embodiment is not limited to this. The edge of the EL layer 175 may be located inside the edge of the electrode 111, or may coincide with or approximately coincide with the edge of the electrode 111. Furthermore, in the EL layer 175, a configuration in which the edge of the light-emitting layer 112 coincides with or approximately coincides with the edge of the first functional layer 115 and the edge of the second functional layer 116 is illustrated, but this embodiment is not limited to this. The edge of the light-emitting layer 112 may be located inside the edge of the first functional layer 115 and the edge of the second functional layer 116. When the end of the light-emitting layer 112 is located inside the end of the first functional layer 115 and the end of the second functional layer 116, the end of the light-emitting layer 112 may be located inside the end of the electrode 111, outside the end of the electrode 111, or may coincide or approximately coincide with the end of the electrode 111.

[0204] 6A and other figures show a configuration in which the end of the light-receiving layer 177 is located outside the end of the electrode 111 in the light-receiving device 150, but this is not a limitation of one embodiment of the present invention. The end of the light-receiving layer 177 may be located inside the end of the electrode 111, or may coincide with or approximately coincide with the end of the electrode 111.

[0205] 6A shows a sacrificial layer 128p having a region in contact with the electrode 111p in the connection portion 140. The sacrificial layer 128p is a remaining portion of a layer that was provided when the display device was manufactured. The sacrificial layer 128p will be described in detail later.

[0206] [Configuration Example 3-3] Figure 7A shows a configuration different from that shown in Figure 6A. Light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B shown in Figure 7A differ from the configuration shown in Figure 6A mainly in that the ends of light-emitting layer 112 are located more inward than the ends of first functional layer 115 and second functional layer 116.

[0207] An enlarged view of region P indicated by the dashed-dotted line in Figure 7A is shown in Figure 7B, and an enlarged view of region Q is shown in Figure 7C. Figure 7B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 7C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0208] As shown in FIG. 6B , in the light-emitting device 110B, the end of the light-emitting layer 112B is located inside the end of the first functional layer 115c. The end of the light-emitting layer 112B is located inside the end of the second functional layer 116c. The top and side surfaces of the light-emitting layer 112B are in contact with the second functional layer 116c. That is, the top and side surfaces of the light-emitting layer 112B are covered with the second functional layer 116c. Covering the top and side surfaces of the light-emitting layer 112B with the second functional layer 116c can prevent impurities from diffusing into the light-emitting layer 112B. This improves the reliability of the light-emitting device 110B. The impurities include, for example, metal components contained in the common electrode 123.

[0209] The side surface of the light-emitting layer 112B is preferably tapered. The angle θ formed between the side surface of the light-emitting layer 112B and the surface on which the light-emitting layer 112B is to be formed (here, the first functional layer 115c) is 112B is preferably small. Specifically, the angle θ 112Bis preferably greater than 0 degrees and less than 90 degrees, more preferably greater than 0 degrees and less than 60 degrees, even more preferably greater than 0 degrees and less than 50 degrees, even more preferably greater than 0 degrees and less than 40 degrees, and even more preferably greater than 0 degrees and less than 30 degrees. 112B By reducing the angle θ, the step coverage of the layer (for example, the second functional layer 116c) formed on the light-emitting layer 112B and the first functional layer 115c can be improved, and defects such as step discontinuities or voids in the layer can be suppressed. 112B is the angle θ1 15c Smaller is preferable.

[0210] The light-emitting layer 112B can be formed using FMM. The light-emitting layer 112B formed using FMM has a thickness that is thinner toward the end, and the angle θ 112B can become extremely small. For example, the angle θ 112B may be greater than 0 degrees and less than 30 degrees. Therefore, the side surface and the top surface of the light-emitting layer 112B may be continuously connected, making it difficult to clearly distinguish between the side surface and the top surface.

[0211] The edges of the second functional layer 116c coincide or roughly coincide with the edges of the first functional layer 115c. In other words, the top surface shape of the second functional layer 116c coincides or roughly coincides with that of the first functional layer 115c. For example, the first functional layer 115c and the second functional layer 116c can be formed by processing a first film that becomes the first functional layer 115c and a second film that becomes the second functional layer 116c using the same mask.

[0212] The side surfaces of the first functional layer 115c and the second functional layer 116c are preferably perpendicular or approximately perpendicular to the surface on which the layers are to be formed. For example, the angle θ between the side surface of the first functional layer 115c and the surface on which the layers are to be formed (here, the substrate 101) is 115c The angle θ formed between the side surface of the second functional layer 116c and the surface to be formed (here, the first functional layer 115c) is preferably 60 degrees or more and 90 degrees or less. 116c is preferably 60 degrees or more and 90 degrees or less.

[0213] Although the light emitting device 110B has been described as an example here, the same applies to the light emitting device 110R and the light emitting device 110B. The angle θ formed between the side surface of the light emitting layer 112R and the surface on which the light emitting layer 112R is to be formed (here, the first functional layer 115a) is 112R , and the angle θ formed between the side surface of the light-emitting layer 112G and the surface on which the light-emitting layer 112G is to be formed (here, the first functional layer 115b). 112G are the angles θ 112B The angle θ formed between the side surface of the second functional layer 116a and the surface to be formed (here, the first functional layer 115a) is 116a , and the angle θ formed between the side surface of the second functional layer 116b and the surface to be formed (here, the first functional layer 115b). 116b are the angles θ 116c Therefore, detailed explanation will be omitted.

[0214] 7B , in the light-receiving device 150, the end of the third functional layer 155, the end of the active layer 157, and the end of the fourth functional layer 156 are aligned or substantially aligned with one another. In other words, the top surface shapes of the third functional layer 155, the active layer 157, and the fourth functional layer 156 are aligned or substantially aligned with one another. For example, the third functional layer 155, the active layer 157, and the fourth functional layer 156 can be formed by processing the film that will become the third functional layer 155, the film that will become the active layer 157, and the film that will become the fourth functional layer 156 using the same mask.

[0215] The side surface of the third functional layer 155 is preferably perpendicular or approximately perpendicular to the surface on which the layer is to be formed. For example, the angle θ between the side surface of the third functional layer 155 and the surface on which the layer is to be formed (here, the substrate 101) is 155 is preferably 60 degrees or more and 90 degrees or less.

[0216] [Configuration Example 3-4] Fig. 8A shows a configuration different from that shown in Fig. 7A. Light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B shown in Fig. 8A differ from the configuration shown in Fig. 7A mainly in that the end of light-emitting layer 112 is located more inward than the end of electrode 111.

[0217] An enlarged view of region P indicated by a dashed dotted line in Figure 8A is shown in Figure 8B, and an enlarged view of region Q is shown in Figure 8C. Figure 8B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 8C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0218] 8B, in the light-receiving device 150, the edges of the third functional layer 155, the active layer 157, and the fourth functional layer 156 are aligned or approximately aligned. The edges of the third functional layer 155, the active layer 157, and the fourth functional layer 156 are positioned outside the edge of the electrode 111d.

[0219] 8B and 8C , in the light-emitting device 110, the edges of the first functional layer 115 and the second functional layer 116 are aligned or approximately aligned. The edges of the first functional layer 115 and the second functional layer 116 are positioned outside the edges of the electrode 111. The edges of the electrode 111 are positioned outside the edges of the light-emitting layer 112.

[0220] [Configuration Example 3-5] Fig. 9A shows a configuration different from that shown in Fig. 6A. Light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B shown in Fig. 9A differ from the configuration shown in Fig. 6A mainly in that the end of EL layer 175 is located inside the end of electrode 111, and light-receiving device 150 differs from the configuration shown in Fig. 6A mainly in that the end of light-receiving layer 177 is located inside the end of electrode 111d.

[0221] An enlarged view of region P indicated by a dashed dotted line in Figure 9A is shown in Figure 9B, and an enlarged view of region Q is shown in Figure 9C. Figure 9B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 9C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0222] As shown in Fig. 9B, an edge of light-receiving layer 177 is located on electrode 111d. An edge of EL layer 175B is located on electrode 111c. As shown in Fig. 9C, an edge of EL layer 175R is located on electrode 111a. An edge of EL layer 175G is located on electrode 111b.

[0223] The insulating layer 182 preferably has an area in contact with the side surfaces of the EL layer 175, the side surfaces of the light-receiving layer 177, and the top and side surfaces of the electrode 111. In particular, by providing the insulating layer 182 between the electrode 111 and the common electrode 123, it is possible to prevent the electrode 111 and the common electrode 123 from coming into contact with each other and causing a short circuit.

[0224] [Configuration Example 3-6] Fig. 10A shows a configuration different from that shown in Fig. 9A. Light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B shown in Fig. 10A differ from the configuration shown in Fig. 9A mainly in that the ends of light-emitting layer 112 are located more inward than the ends of first functional layer 115 and second functional layer 116.

[0225] An enlarged view of region P indicated by a dashed dotted line in Figure 10A is shown in Figure 10B, and an enlarged view of region Q is shown in Figure 10C. Figure 10B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 10C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0226] 10B, in the light-receiving device 150, the edges of the third functional layer 155, the active layer 157, and the fourth functional layer 156 are aligned or approximately aligned. The edges of the third functional layer 155, the active layer 157, and the fourth functional layer 156 are located inside the edge of the electrode 111d.

[0227] 10B and 10C , in the light-emitting device 110, the edges of the first functional layer 115 and the second functional layer 116 are aligned or approximately aligned. The edges of the first functional layer 115 and the second functional layer 116 are located inside the edge of the electrode 111. The edges of the first functional layer 115 and the second functional layer 116 are located outside the edge of the light-emitting layer 112.

[0228] [Configuration Example 3-7] Fig. 11A shows a configuration different from the configuration shown in Fig. 6A. The configuration shown in Fig. 11A differs from the configuration shown in Fig. 6A mainly in that insulating layer 182 has regions that overlap with the upper surfaces of EL layer 175R, EL layer 175G, EL layer 175B, and light-receiving layer 177.

[0229] An enlarged view of region P indicated by a dashed dotted line in Figure 11A is shown in Figure 11B, and an enlarged view of region Q is shown in Figure 11C. Figure 11B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 11C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0230] 11B, the upper surface of insulating layer 182 has an area higher than the upper surface of light-receiving layer 177. Furthermore, sacrificial layer 128 used in forming light-receiving layer 177 may remain between insulating layer 182 and light-receiving layer 177. Details of sacrificial layer 128 will be described later.

[0231] In a cross-sectional view, one end of the sacrificial layer 128 coincides or roughly coincides with an end of the light-receiving layer 177. The other end of the sacrificial layer 128 coincides or roughly coincides with an end of the insulating layer 182. For example, a first sacrificial layer that will become the sacrificial layer 128 is formed on a film that will become the light-receiving layer 177. Then, using the first sacrificial layer as a mask, the film that will become the light-receiving layer 177 is processed to form the light-receiving layer 177. Then, a film that will become the insulating layer 182a and the insulating layer 182b are formed. Then, using the insulating layer 182b as a mask, the film that will become the insulating layer 182a and the first sacrificial layer are processed to form the insulating layer 182a and the sacrificial layer 128.

[0232] The upper surface of the insulating layer 182 has a region higher than the upper surface of the EL layer 175B. Furthermore, the sacrificial layer 118c used when forming the EL layer 175B may remain between the insulating layer 182 and the EL layer 175B.

[0233] One end of the sacrificial layer 118c coincides or roughly coincides with an end of the EL layer 175B. The other end of the sacrificial layer 118c coincides or roughly coincides with an end of the insulating layer 182. For example, a second sacrificial layer that will become the sacrificial layer 118c is formed on a film that will become the EL layer 175B. Then, using the second sacrificial layer as a mask, the film that will become the EL layer 175B is processed to form the EL layer 175B. Then, a film that will become the insulating layer 182a and the insulating layer 182b are formed. Then, using the insulating layer 182b as a mask, the film that will become the insulating layer 182a and the second sacrificial layer are processed to form the insulating layer 182a and the sacrificial layer 118c. Details of the sacrificial layer 118c will be described later.

[0234] 11C, the upper surface of the insulating layer 182 has a region higher than the upper surface of the EL layer 175R. Furthermore, the sacrificial layer 118a used in forming the EL layer 175R may remain between the insulating layer 182 and the EL layer 175R. Similarly, the upper surface of the insulating layer 182 has a region higher than the upper surface of the EL layer 175G. Furthermore, the sacrificial layer 118b used in forming the EL layer 175G may remain between the insulating layer 182 and the EL layer 175G. Regarding the sacrificial layers 118a and 118b, the description of the sacrificial layer 118c can be referred to, and therefore detailed description thereof will be omitted.

[0235] [Configuration Example 3-8] Fig. 12A shows a configuration different from that shown in Fig. 7A. The configuration shown in Fig. 12A differs from the configuration shown in Fig. 7A mainly in that insulating layer 182 has regions that overlap with the upper surfaces of EL layer 175R, EL layer 175G, EL layer 175B, and light-receiving layer 177.

[0236] An enlarged view of region P indicated by a dashed dotted line in Figure 12A is shown in Figure 12B, and an enlarged view of region Q is shown in Figure 12C. Figure 12B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 12C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0237] 12B, the upper surface of insulating layer 182 has an area higher than the upper surface of light-receiving layer 177. Furthermore, sacrificial layer 128 used when forming light-receiving layer 177 may remain between insulating layer 182 and light-receiving layer 177.

[0238] 12B and 12C, the upper surface of the insulating layer 182 has an area higher than the upper surface of the EL layer 175. Furthermore, sacrificial layers 118a, 118b, and 118c used in forming the EL layer 175R, EL layer 175G, and EL layer 175B may remain between the insulating layer 182 and the EL layer 175R, EL layer 175G, and EL layer 175B.

[0239] [Configuration Example 3-9] Figure 13A shows a configuration different from that shown in Figure 6A. Light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B shown in Figure 13A differ from the configuration shown in Figure 6A mainly in that they have first functional layer 115 instead of first functional layer 115a, first functional layer 115b, and first functional layer 115c, and in that they have second functional layer 116 instead of second functional layer 116a, second functional layer 116b, and second functional layer 116c.

[0240] Specifically, light-emitting device 110R has an EL layer formed by stacking first functional layer 115, light-emitting layer 112R, and second functional layer 116 in this order. Light-emitting device 110G has an EL layer formed by stacking first functional layer 115, light-emitting layer 112G, and second functional layer 116 in this order. Light-emitting device 110B has an EL layer formed by stacking first functional layer 115, light-emitting layer 112B, and second functional layer 116 in this order.

[0241] First functional layer 115 is a layer common to light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B, and can be referred to as a first common layer. Similarly, second functional layer 116 can be referred to as a second common layer. First functional layer 115 can be made of the same materials as first functional layer 115a, first functional layer 115b, and first functional layer 115c. Second functional layer 116 can be made of the same materials as second functional layer 116a, second functional layer 116b, and second functional layer 116c.

[0242] An enlarged view of region P indicated by a dashed dotted line in Figure 13A is shown in Figure 13B, and an enlarged view of region Q is shown in Figure 13C. Figure 13B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 13C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0243] 13B, the light-receiving layer 177 of the light-receiving device 150 preferably does not have a layer in common with the EL layer 175B of the light-emitting device 110B, and also does not have a region in contact with the EL layer 175B. In other words, the light-receiving layer 177 of the light-receiving device 150 is preferably separated from the EL layer 175 of the light-emitting device 110 adjacent to the light-receiving device 150. Similarly, when two light-receiving devices 150 are adjacent to each other, the light-receiving layer 177 of one light-receiving device 150 is preferably separated from the light-receiving layer 177 of the other light-receiving device 150.

[0244] 13B, the edge of the second functional layer 116 coincides with or roughly coincides with the edge of the first functional layer 115. In other words, the second functional layer 116 has a top surface shape that coincides with or roughly coincides with the top surface shape of the first functional layer 115. For example, the first functional layer 115 and the second functional layer 116 can be formed by processing a first film that will become the first functional layer 115 and a second film that will become the second functional layer 116 using the same mask.

[0245] The side surfaces of the first functional layer 115 are preferably perpendicular or approximately perpendicular to the respective surfaces on which the layers are to be formed. For example, the angle θ between the side surfaces of the first functional layer 115 and the surfaces on which the layers are to be formed (here, the substrate 101) is 115 is preferably 60 degrees or more and 90 degrees or less.

[0246] 13A, 13B, and 13C, adjacent light-emitting devices 110 have a first functional layer 115 and a second functional layer 116 in common. Specifically, light-emitting layer 112R, light-emitting layer 112G, and light-emitting layer 112B have a first functional layer 115 and a second functional layer 116 in common with the light-emitting layer 112 adjacent to each other.

[0247] [Configuration Example 3-10] Figure 14A shows a configuration different from that shown in Figure 13A. Light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B shown in Figure 14A differ from the configuration shown in Figure 13A mainly in that adjacent light-emitting layers 112 have overlapping regions.

[0248] An enlarged view of region Q indicated by the dashed dotted line in FIG. 14A is shown in FIG. 14B, and an enlarged view of region R is shown in FIG. 14C. FIG. 14B shows light-emitting device 110R on the left and light-emitting device 110G on the right. FIG. 14C shows light-emitting device 110G on the left and light-emitting device 110B on the right. For an enlarged view of region P, see FIG. 13B.

[0249] 14B, light-emitting layer 112G has a region overlapping with light-emitting layer 112R. Specifically, light-emitting layer 112G is provided to cover light-emitting layer 112R, and has a region in contact with an edge of light-emitting layer 112R. Similarly, as shown in FIG. 14C, light-emitting layer 112B has a region overlapping with light-emitting layer 112G. Specifically, light-emitting layer 112B is provided to cover light-emitting layer 112G, and has a region in contact with an edge of light-emitting layer 112G.

[0250] 14A and the like show a structure in which the light-emitting layer 112R, the light-emitting layer 112G, and the light-emitting layer 112B are formed in this order, and the light-emitting layer 112B covers the light-emitting layer 112G, and the light-emitting layer 112G covers the light-emitting layer 112R; however, one embodiment of the present invention is not limited to this. The order in which the light-emitting layer 112R, the light-emitting layer 112G, and the light-emitting layer 112B are formed is not particularly limited, and a structure in which adjacent light-emitting layers 112 overlap each other can be used. The presence of an overlapping region between two adjacent light-emitting layers 112 can be confirmed by, for example, a photoluminescence (PL) method.

[0251] In the region overlapping with the electrode 111, it is preferable that adjacent light-emitting layers 112 do not overlap. In other words, it is preferable that the region where adjacent light-emitting layers 112 overlap does not overlap with the electrode 111. In the region where adjacent light-emitting layers 112 overlap, the total film thickness of the light-emitting layers 112 increases, which may increase the driving voltage and reduce the contribution to light emission. By configuring the region where adjacent light-emitting layers 112 to not overlap with the electrode 111, it is possible to prevent the area of ​​the light-emitting region from becoming smaller.

[0252] Between adjacent light-emitting devices 110, a step occurs between a region where the light-emitting layer 112 is provided and a region where the light-emitting layer 112 is not provided near the end of the light-emitting layer 112. In the display device of one embodiment of the present invention, the step can be reduced by having a region where adjacent light-emitting layers 112 overlap, and the step coverage of the second functional layer 116 formed thereon can be improved. Therefore, step discontinuity of the second functional layer 116 can be suppressed.

[0253] 14A and the like show a configuration in which the insulating layer 182 is provided between the light-receiving layer 177 and the adjacent EL layer 175, and the insulating layer 182 is not provided between two adjacent EL layers 175; however, one embodiment of the present invention is not limited to this. The insulating layer 182 may also be provided between two adjacent EL layers 175. When separating the first functional layer 115 and the second functional layer 116 between two adjacent light-emitting devices 110, the region where the adjacent light-emitting layers 112 contact each other may be removed, or a portion of the region may be removed.

[0254] [Configuration Example 3-11] A configuration different from that shown in Fig. 6A is shown in Fig. 15A. The configuration shown in Fig. 15A differs from the configuration shown in Fig. 6A mainly in that it does not have insulating layer 182.

[0255] An enlarged view of region P indicated by a dashed dotted line in Figure 15A is shown in Figure 15B, and an enlarged view of region Q is shown in Figure 15C. Figure 15B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 15C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0256] As shown in FIGS. 15B and 15C , the side surfaces of electrodes 111a, 111b, and 111c are preferably covered with one or more of the first functional layer 115, the light-emitting layer 112, and the second functional layer 116. That is, the ends of electrodes 111a, 111b, and 111c are preferably located more inward than one or more of the ends of the first functional layer 115, the light-emitting layer 112, and the second functional layer 116. Similarly, the side surfaces of electrode 111d are preferably covered with one or more of the third functional layer 155, the active layer 157, and the fourth functional layer 156. That is, the ends of electrode 111d are preferably located more inward than one or more of the ends of the third functional layer 155, the active layer 157, and the fourth functional layer 156. This configuration can prevent electrode 111 and common electrode 123 from coming into contact with each other and causing a short circuit.

[0257] [Configuration Example 3-12] Fig. 16A shows a configuration different from that shown in Fig. 13A. Light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B shown in Fig. 16A differ from the configuration shown in Fig. 13A mainly in that the shapes of the side surfaces of first functional layer 115 and second functional layer 116 are different.

[0258] An enlarged view of region P indicated by a dashed dotted line in Figure 16A is shown in Figure 16B, and an enlarged view of region Q is shown in Figure 16C. Figure 16B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 16C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0259] The side surface of the first functional layer 115 has a tapered shape. The angle θ formed between the side surface of the first functional layer 115 and the surface on which the layer is to be formed (here, the substrate 101) is 115 It is preferable that the angle θ is small. 115 is preferably greater than 0 degrees and less than 90 degrees, more preferably greater than 0 degrees and less than 60 degrees, even more preferably greater than 0 degrees and less than 50 degrees, even more preferably greater than 0 degrees and less than 40 degrees, and even more preferably greater than 0 degrees and less than 30 degrees. 115 By reducing the size of the insulating layer 182, the step coverage of the layers (e.g., insulating layer 182) formed on the substrate 101 and first functional layer 115 is improved, and defects such as step discontinuities or voids in the layers can be suppressed. The side surfaces of the second functional layer 116 may also have a tapered shape. By having a tapered side surface of the second functional layer 116, the step coverage of the layers (e.g., insulating layer 182) formed on the first functional layer 115 and second functional layer 116 is improved, and defects such as step discontinuities or voids in the layers can be suppressed.

[0260] 16B, the end of the second functional layer 116 is located inside the end of the first functional layer 115. Alternatively, the end of the second functional layer 116 may be located outside the end of the first functional layer 115, or may coincide or approximately coincide with the end of the first functional layer 115.

[0261] 16A and the like show a configuration in which the end of the light-emitting layer 112 is located inside the end of the first functional layer 115 and the second functional layer 116, but one embodiment of the present invention is not limited to this. The end of the light-emitting layer 112 may be located outside the end of the first functional layer 115. The end of the light-emitting layer 112 may be located outside the end of the second functional layer 116.

[0262] [Configuration Example 3-13] A configuration different from that shown in Fig. 16A is shown in Fig. 17A. The configuration shown in Fig. 17A differs from the configuration shown in Fig. 16A mainly in that it does not have insulating layer 182.

[0263] An enlarged view of region P indicated by a dashed dotted line in Figure 17A is shown in Figure 17B, and an enlarged view of region Q is shown in Figure 17C. Figure 17B shows light-emitting device 110B on the left and light-receiving device 150 on the right. Figure 17C shows light-emitting device 110R on the left and light-emitting device 110G on the right.

[0264] As shown in FIGS. 17B and 17C , the side surfaces of electrodes 111a, 111b, and 111c are preferably covered with one or more of the first functional layer 115, the light-emitting layer 112, and the second functional layer 116. That is, the ends of electrodes 111a, 111b, and 111c are preferably located more inward than one or more of the ends of the first functional layer 115, the light-emitting layer 112, and the second functional layer 116. Similarly, the side surfaces of electrode 111d are preferably covered with one or more of the third functional layer 155, the active layer 157, and the fourth functional layer 156. That is, the ends of electrode 111d are preferably located more inward than one or more of the ends of the third functional layer 155, the active layer 157, and the fourth functional layer 156. This configuration can prevent electrode 111 and common electrode 123 from coming into contact with each other and causing a short circuit.

[0265] <Production method example 1> An example of a manufacturing method of a display device according to one embodiment of the present invention will be described below with reference to the drawings. Here, the manufacturing method of the display device shown in Figure 6A will be described as an example. Figures 18A to 21D are schematic cross-sectional views illustrating steps in the manufacturing method of the display device.

[0266] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be formed using methods such as sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0267] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0268] When processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method or the like.

[0269] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, then expose and develop it to process the thin film into the desired shape.

[0270] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure may also be performed by immersion exposure technology. Light used for exposure may also include extreme ultraviolet (EUV) light, X-rays, or the like. Instead of light used for exposure, an electron beam may also be used. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0271] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0272] [Formation of Electrodes 111a to 111d and 111p] Electrodes 111a, 111b, 111c, 111d, and 111p are formed on a substrate 101 (FIG. 18A). First, a conductive film is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. After that, the resist mask is removed, thereby forming the electrodes 111a, 111b, 111c, 111d, and 111p.

[0273] When a conductive film reflective to visible light is used for each pixel electrode, it is preferable to use a material (e.g., silver or aluminum) with as high a reflectance as possible over the entire wavelength range of visible light, which not only increases the light extraction efficiency of the light-emitting device but also improves color reproducibility.

[0274] The electrodes 111a, 111b, 111c, 111d, and 111p preferably have tapered side surfaces. A resist mask used for forming the electrodes 111a, 111b, 111c, 111d, and 111p preferably has tapered side surfaces. The conductive film can be preferably etched by wet etching.

[0275] [Formation of functional film 155f, active film 157f, and functional film 156f] Next, a functional film 155f, which will later become the third functional layer 155, an active film 157f, which will later become the active layer 157, and a functional film 156f, which will later become the fourth functional layer 156, are formed in this order on the electrodes 111a, 111b, 111c, and 111d. The functional film 155f, the active film 157f, and the functional film 156f can each be formed by, for example, a vapor deposition method, a sputtering method, a coating method, an inkjet method, or the like. However, the methods are not limited to these, and the film formation methods described above can be used as appropriate. In this specification, the functional film 155f, the active film 157f, and the functional film 156f may be collectively referred to as a light-receiving film.

[0276] For example, when manufacturing a light-receiving device that is sensitive to the wavelength range of infrared light, at least one of the functional film 155f, the active film 157f, and the functional film 156f can be formed using a polymer compound by a coating method or an ink-jet method, thereby making it possible to manufacture a light-receiving device with good characteristics.

[0277] It is preferable that the functional film 155f, the active film 157f, and the functional film 156f are formed so as not to be provided on the electrode 111p. For example, when the functional film 155f, the active film 157f, and the functional film 156f are formed by vapor deposition or sputtering, they can be formed using a shielding mask so that the functional film 155f, the active film 157f, and the functional film 156f are not formed on the electrode 111p.

[0278] [Formation of Sacrificial Films 128f and 129f] Subsequently, a sacrificial film 128f and a sacrificial film 129f are formed in this order on the functional film 156f (FIG. 18B). The sacrificial film 128f is provided in contact with the upper surface of the electrode 111p.

[0279] The sacrificial film 128f can be preferably a film that is highly resistant to the etching process of the functional film 156f, the active film 157f, and the functional film 155f, i.e., a film with a large etching selectivity. The sacrificial film 128f can also be preferably a film that has a large etching selectivity with respect to the sacrificial film 129f described below. Furthermore, it is particularly preferable to use a film that can be removed by wet etching, which causes little damage to the functional film 156f, the active film 157f, and the functional film 155f, for the sacrificial film 128f.

[0280] The sacrificial film 128f may be, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic film such as an inorganic insulating film. The sacrificial film 128f may be formed by various film formation methods such as sputtering, vapor deposition, CVD, and ALD. In particular, the ALD method causes less film formation damage to the layer on which the sacrificial film 128f is formed, so it is preferable to form the sacrificial film 128f directly on the functional film 156f using the ALD method.

[0281] The sacrificial film 128f may be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. In particular, it is preferable to use a low-melting-point material such as aluminum or silver.

[0282] The sacrificial film 128f can be made of a metal oxide such as indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO). Furthermore, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide, also referred to as ITO), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can also be used. Alternatively, indium tin oxide containing silicon can also be used.

[0283] The present invention can also be applied to a case where element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) is used instead of the above-mentioned gallium. In particular, element M is preferably one or more elements selected from gallium, aluminum, and yttrium.

[0284] The sacrificial film 128f can be made of an oxide such as aluminum oxide, hafnium oxide, or silicon oxide, a nitride such as silicon nitride or aluminum nitride, or an oxynitride such as silicon oxynitride. Such inorganic insulating materials can be formed by a sputtering method, a CVD method, an ALD method, or the like.

[0285] It is preferable to use a material for the sacrificial film 128f that is soluble in a solvent that is chemically stable with respect to at least the functional film 156f. In particular, a material that dissolves in water or alcohol is suitable for use as the sacrificial film 128f. When forming the sacrificial film 128f, it is preferable to apply the sacrificial film 128f dissolved in a solvent such as water or alcohol using a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the functional film 156f, the active film 157f, and the functional film 155f.

[0286] Wet film formation methods that can be used to form the sacrificial film 128f include, for example, spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0287] The sacrificial film 128f can be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0288] The sacrificial film 129f is used as a hard mask when etching the sacrificial film 128f later. Furthermore, the sacrificial film 128f is exposed when processing the sacrificial film 129f later. Therefore, a combination of films with a high etching selectivity between the sacrificial film 128f and the sacrificial film 129f is selected. Therefore, a film that can be used for the sacrificial film 129f can be selected depending on the etching conditions for the sacrificial film 128f and the sacrificial film 129f.

[0289] For example, when dry etching using a gas containing fluorine (also called a fluorine-based gas) is used to etch the sacrificial film 129f, silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, an alloy containing molybdenum and niobium, an alloy containing molybdenum and tungsten, etc. can be used for the sacrificial film 129f. Here, metal oxide films such as IGZO and ITO can be used as films that can have a large etching selectivity (i.e., can slow down the etching rate) compared to dry etching using the fluorine-based gas, and these can be used for the sacrificial film 129f.

[0290] However, the sacrificial film 129f is not limited to this, and can be selected from various materials depending on the etching conditions of the sacrificial film 128f and the etching conditions of the sacrificial film 129f. For example, it can be selected from the films that can be used for the sacrificial film 128f.

[0291] For example, an oxide film can be used as the sacrificial film 129f. Typically, an oxide film or an oxynitride film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride can be used.

[0292] The sacrificial film 129f may be, for example, a nitride film. Specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride may be used. Alternatively, the sacrificial film 129f may be made of a metal such as tungsten, molybdenum, copper, aluminum, titanium, or tantalum, or an alloy containing such a metal.

[0293] For example, it is preferable to use an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method as the sacrificial film 128f, and to use a metal oxide containing indium such as indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO) formed by the sputtering method as the sacrificial film 129f.

[0294] The sacrificial film 129f can be made of a material that can be used for the functional film 155f, the active film 157f, or the functional film 156f. Using such a material is preferable because it allows the same film-forming equipment to be used. Furthermore, when the functional film 155f, the active film 157f, and the functional film 156f are etched later using the sacrificial layer as a mask, the sacrificial film 129f can also be removed, simplifying the process.

[0295] [Formation of Sacrificial Layer 129 and Sacrificial Layer 128] Subsequently, a resist mask 133 and a resist mask 133p are formed on the sacrificial film 129f in the region overlapping with the electrode 111d and on the sacrificial film 129f in the region overlapping with the connection portion 140 (FIG. 18C).

[0296] The resist masks 133 and 133p can be formed using a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material.

[0297] Here, if the resist mask 133 and the resist mask 133p are formed on the sacrificial film 128f without forming the sacrificial film 129f, there is a risk that defects such as pinholes exist in the sacrificial film 128f, causing the functional film 156f, etc. to dissolve due to the solvent of the resist material. By using the sacrificial film 129f, it is possible to prevent such problems from occurring.

[0298] When the sacrificial film 128f is made of a film that is less likely to have defects such as pinholes, the resist mask 133 and the resist mask 133p may be formed directly on the sacrificial film 128f without using the sacrificial film 129f.

[0299] Subsequently, the sacrificial film 129f in the areas not covered by the resist mask 133 and the resist mask 133p is removed by etching to form the sacrificial layer 129 and the sacrificial layer 129p.

[0300] When etching the sacrificial film 129f, it is preferable to use etching conditions with a high selectivity so that the sacrificial film 128f is not removed by the etching. The sacrificial film 129f can be etched by wet etching or dry etching, but by using dry etching, reduction in the areas of the sacrificial layer 129 and the sacrificial layer 129p can be suppressed.

[0301] Subsequently, the resist mask 133 and the resist mask 133p are removed (FIG. 18D).

[0302] The resist masks 133 and 133p can be removed by wet etching or dry etching. In particular, the resist masks 133 and 133p are preferably removed by dry etching (also referred to as plasma ashing) using oxygen gas as an etching gas.

[0303] At this time, the resist mask 133 is removed in a state in which the sacrificial film 128f remains on the functional film 156f, and therefore damage to the functional film 156f, the active film 157f, and the functional film 155f can be suppressed. In particular, if the active film 157f comes into contact with oxygen, it may adversely affect the characteristics of the light-receiving device, so this is suitable for etching using oxygen gas, such as plasma ashing.

[0304] Next, using the sacrificial layer 129 and the sacrificial layer 129p as a mask, the sacrificial film 128f in the area not covered by either the sacrificial layer 129 or the sacrificial layer 129p is removed by etching, forming a sacrificial layer 128 in the area overlapping with the electrode 111d, and forming a sacrificial layer 128p in contact with the upper surface of the electrode 111p.

[0305] The sacrificial film 128f can be etched by wet etching or dry etching, but dry etching is preferable because it can prevent the areas of the sacrificial layer 128 and the sacrificial layer 128p from being reduced.

[0306] [Formation of the third functional layer 155, the active layer 157, and the fourth functional layer 156] Next, the sacrificial layer 129 and the sacrificial layer 129p are removed by etching, and the functional film 156f, the active film 157f, and the functional film 155f in the areas not covered by either the sacrificial layer 128 or the sacrificial layer 128p are removed by etching to form the fourth functional layer 156, the active layer 157, and the third functional layer 155 (Figure 18E).

[0307] By etching the functional film 156f, the active film 157f, the functional film 155f, and the sacrificial layer 129 in the same process, the process can be simplified, the productivity of the display device can be increased, and the manufacturing cost can be reduced.

[0308] In particular, dry etching using an etching gas that does not contain oxygen (O2) gas is preferably used to etch the functional film 156f, the active film 157f, and the functional film 155f. This suppresses deterioration of the functional film 156f, the active film 157f, and the functional film 155f, resulting in a highly reliable display device. Suitable etching gases include noble gases such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, H2, and He. Alternatively, a mixture of any of the above gases with a gas other than oxygen gas can be used as the etching gas.

[0309] The etching of the functional film 156f, the active film 157f, and the functional film 155f may be performed separately from the etching of the sacrificial layer 129. For example, the functional film 156f, the active film 157f, and the functional film 155f may be etched first, and then the sacrificial layer 129 may be etched.

[0310] [Formation of functional film 115f] Next, functional film 115f is formed to cover substrate 101, electrode 111a, electrode 111b, electrode 111c, third functional layer 155, active layer 157, fourth functional layer 156, sacrificial layer 128, and sacrificial layer 128p (FIG. 19A). Functional film 115f will later become first functional layer 115a, first functional layer 115b, and first functional layer 115c. Functional film 115f is preferably formed without using FMM.

[0311] The functional film 115f can be formed by the same method as that used to form the functional film 155f, the active film 157f, and the functional film 156f described above. However, the present invention is not limited to this, and the above-mentioned film formation methods can be used as appropriate.

[0312] [Formation of Light-Emitting Layers 112R, 112G, and 112B] Subsequently, island-shaped light-emitting layers 112R are formed on the functional film 115f in the regions overlapping with the electrodes 111a (FIG. 19B).

[0313] The light-emitting layer 112R is preferably formed by a vacuum deposition method using FMM. Alternatively, the island-shaped light-emitting layer 112R may be formed by a sputtering method or an ink-jet method using FMM.

[0314] 19B shows the formation of the light-emitting layer 112R via the FMM 191R. In FIG. 19B, the light-emitting layer 112R is formed by a so-called face-down method, in which the substrate is inverted so that the surface on which the light-emitting layer 112R is to be formed faces downward.

[0315] In vacuum deposition using an FMM, deposition is often performed over an area wider than the opening of the FMM. As shown by the dashed line in Figure 19B, the light-emitting layer 112R can be deposited over an area wider than the opening of the FMM 191R. In addition, the edge of the light-emitting layer 112R has a tapered shape.

[0316] 19B shows a configuration in which the FMM 191R is not in contact with the surface on which the light-emitting layer 112R is to be formed, but this is not a limitation of one embodiment of the present invention. The FMM 191R may be in contact with the surface on which the light-emitting layer 112R is to be formed (here, the functional film 115f). In this case, the region that will become the light-receiving device 150 and that is highest from the substrate 101, i.e., the region that overlaps with the electrode 111d, is in contact with the FMM 191R. This region can have the function of holding the FMM 191R. This region can also have the function of a spacer that maintains the distance between the FMM 191R and the electrodes 111a, 111b, and 111c. The same applies to the formation of the light-emitting layers 112G and 112B.

[0317] Next, using FMM191G, the light-emitting layer 112G is formed on the functional film 115f in a region overlapping with the electrode 111b (FIG. 19C). The end of the light-emitting layer 112G has a tapered shape. Note that FIG. 19C illustrates an example in which the light-emitting layer 112G is formed so that it does not have a region overlapping with the light-emitting layer 112R, that is, so that the light-emitting layer 112G and the light-emitting layer 112R are separated from each other; however, one embodiment of the present invention is not limited thereto. The light-emitting layer 112G may also be formed so that it has a region overlapping with the light-emitting layer 112R, that is, so that the light-emitting layer 112G and the light-emitting layer 112R are in contact with each other.

[0318] Next, the light-emitting layer 112B is formed on the functional film 115f in a region overlapping with the electrode 111c using FMM 191B ( FIG. 19D ). The end of the light-emitting layer 112B has a tapered shape. Note that FIG. 19D illustrates an example in which the light-emitting layer 112B is formed so that it does not have a region overlapping with the light-emitting layer 112G, that is, so that the light-emitting layer 112B and the light-emitting layer 112G are separated. However, one embodiment of the present invention is not limited to this. The light-emitting layer 112B may also be formed so that it has a region overlapping with the light-emitting layer 112G, that is, so that the light-emitting layer 112B and the light-emitting layer 112G are in contact with each other.

[0319] It is preferable that the light-emitting layers 112R, 112G, and 112B are not formed on the electrode 111p.

[0320] Although the light emitting layer 112R, the light emitting layer 112G, and the light emitting layer 112B are formed in this order, the order of formation is not limited to this.

[0321] [Formation of functional film 116f, sacrificial film 118f, and sacrificial film 119f] Next, functional film 116f is formed to cover light-emitting layer 112R, light-emitting layer 112G, light-emitting layer 112B, and functional film 115f. Functional film 116f will later become second functional layer 116a, second functional layer 116b, and second functional layer 116c. To form functional film 116f, a method that can be used to form functional film 155f, active film 157f, and functional film 156f described above can be used. However, the method is not limited to this, and any of the above-mentioned film formation methods can be used as appropriate.

[0322] Subsequently, a sacrificial film 118f and a sacrificial film 119f are formed in this order on the functional film 116f (FIG. 20A).

[0323] The sacrificial film 118f can be preferably a film that is highly resistant to the etching process of the functional films 116f and 115f, i.e., a film with a large etching selectivity. The sacrificial film 118f can also be preferably a film that has a large etching selectivity with respect to the sacrificial film 119f (described later). Furthermore, the sacrificial film 118f can be preferably a film that can be removed by wet etching, which causes little damage to the functional films 156f and 155f.

[0324] The sacrificial film 118f can be made of a material that can be used for the sacrificial film 128f. The sacrificial film 118f can be formed by a method that can be used for forming the sacrificial film 128f. However, the present invention is not limited to this, and the above-described film formation methods can be used as appropriate.

[0325] The sacrificial film 118f is preferably made of the same material as the sacrificial film 128f. Furthermore, the thickness of the sacrificial film 118f is preferably approximately the same as the thickness of the sacrificial film 128f.

[0326] The sacrificial film 119f is used as a hard mask when etching the sacrificial film 118f later. Furthermore, the sacrificial film 118f is exposed when processing the sacrificial film 119f later. Therefore, a combination of films with a high etching selectivity between the sacrificial film 118f and the sacrificial film 119f is selected. Therefore, a film that can be used for the sacrificial film 119f can be selected depending on the etching conditions for the sacrificial film 118f and the sacrificial film 119f.

[0327] The sacrificial film 119f can be made of a material that can be used for the sacrificial film 129f. Furthermore, the sacrificial film 118f can be formed by a method that can be used for forming the sacrificial film 128f. However, the method is not limited to this, and any of the film formation methods described above can be used as appropriate. The sacrificial film 119f can be made of the same material as the sacrificial film 129f, or a different material. Furthermore, the thickness of the sacrificial film 118f can be approximately the same as or different from the thickness of the sacrificial film 128f.

[0328] For etching of the sacrificial film 119f, the description regarding etching of the sacrificial film 129f can be referred to, and therefore a detailed description thereof will be omitted.

[0329] [Formation of Sacrificial Layers 119a to 119c and Sacrificial Layers 118a to 118c] Subsequently, resist masks 134a, 134b, and 134c are formed on the sacrificial film 119f in the region overlapping with electrode 111a, the region overlapping with electrode 111b, and the region overlapping with electrode 111c (FIG. 20B).

[0330] The resist mask 134a is made smaller than the light-emitting layer 112R. That is, the edge of the resist mask 134a is located more inward than the edge of the light-emitting layer 112R. Similarly, the resist mask 134b is made smaller than the light-emitting layer 112G. That is, the edge of the resist mask 134b is located more inward than the edge of the light-emitting layer 112G. The resist mask 134c is made smaller than the light-emitting layer 112B. That is, the edge of the resist mask 134c is located more inward than the edge of the light-emitting layer 112B.

[0331] The resist masks 134a, 134b, and 134c can be formed by referring to the description of the resist mask 133, and therefore detailed description thereof will be omitted.

[0332] When manufacturing the display device shown in FIG. 7A, the resist mask 134a is made larger than the light-emitting layer 112R. That is, the edge of the resist mask 134a is positioned outside the edge of the light-emitting layer 112R. Similarly, the resist mask 134b is made larger than the light-emitting layer 112G. That is, the edge of the resist mask 134b is positioned outside the edge of the light-emitting layer 112G. The resist mask 134c is made larger than the light-emitting layer 112B. That is, the edge of the resist mask 134c is positioned outside the edge of the light-emitting layer 112B.

[0333] Here, if the resist masks 134a, 134b, and 134c are formed on the sacrificial film 118f without forming the sacrificial film 119f, defects such as pinholes in the sacrificial film 118f may cause the functional film 116f to dissolve due to the solvent of the resist material. By using the sacrificial film 119f, it is possible to prevent such defects from occurring.

[0334] When the sacrificial film 118f is made of a film that is less likely to have defects such as pinholes, the resist masks 134a, 134b, and 134c may be formed directly on the sacrificial film 118f without using the sacrificial film 119f.

[0335] Subsequently, the sacrificial film 119f in the areas not covered by the resist mask 134a, the resist mask 134b, and the resist mask 134c is removed by etching to form the sacrificial layers 119a, 119b, and 119c.

[0336] When etching the sacrificial film 119f, it is preferable to use etching conditions with a high selectivity so that the sacrificial film 118f is not removed by the etching. The etching of the sacrificial film 119f can be performed by wet etching or dry etching, but by using dry etching, reduction in the areas of the sacrificial layers 119a, 119b, and 119c can be suppressed.

[0337] Subsequently, the resist masks 134a, 134b, and 134c are removed (FIG. 20C).

[0338] The resist masks 134a, 134b, and 134c can be removed in a manner similar to that used to remove the resist mask 133.

[0339] At this time, the resist masks 134a, 134b, and 134c are removed in a state in which the sacrificial film 118f remains on the functional film 116f, and therefore damage to the functional film 156f, the light-emitting layers 112R, 112G, 112B, and the functional film 155f can be suppressed. In particular, if the light-emitting layers 112R, 112G, and 112B come into contact with oxygen, this may adversely affect the characteristics of the light-emitting device, and therefore this is suitable for etching using oxygen gas, such as plasma ashing.

[0340] Next, using sacrificial layers 119a, 119b, and 119c as masks, sacrificial film 118f in areas not covered by sacrificial layers 119a, 119b, and 119c is removed by etching, forming sacrificial layers 118a, 118b, and 118c.

[0341] For etching of the sacrificial film 118f, the description regarding etching of the sacrificial film 128f can be referred to, and therefore a detailed description thereof will be omitted.

[0342] [Formation of First Functional Layers 115a to 115c and Second Functional Layers 116a to 116c] Next, sacrificial layers 119a, 119b, and 119c are removed by etching, and functional films 116f and 115f in areas not covered by sacrificial layers 118a, 118b, and 118c are removed by etching to form second functional layers 116a, 116b, 116c, first functional layers 115a, 115b, and 115c (Figure 20D).

[0343] By etching the functional films 116f and 115f and the sacrificial layers 119a, 119b, and 119c in the same process, the process can be simplified, the productivity of the display device can be increased, and the manufacturing cost can be reduced.

[0344] In particular, dry etching using an etching gas that does not contain oxygen as a main component is preferably used to etch the functional films 116f and 115f, which can suppress deterioration of the functional films 156f and 155f and realize a highly reliable display device.

[0345] Alternatively, etching of the functional films 116f and 115f and etching of the sacrificial layers 119a, 119b, and 119c may be performed separately. For example, the functional films 116f and 115f may be etched first, and then the sacrificial layers 119a, 119b, and 119c may be etched.

[0346] [Formation of insulating film 182af and insulating layer 182b] Subsequently, the insulating film 182af is formed to cover the sacrificial layer 118a, the sacrificial layer 118b, the sacrificial layer 118c, the sacrificial layer 128, the sacrificial layer 128p, and the substrate 101.

[0347] The insulating film 182af functions as a barrier layer that prevents impurities, such as water, from diffusing into the EL layer and the light-receiving layer. The insulating film 182af is preferably formed by the ALD method, which has excellent step coverage, because it can adequately cover the side surfaces of the EL layer and the light-receiving layer.

[0348] The insulating film 182af is preferably the same film as the sacrificial layer 118 because the films can be etched later in the same process. For example, the insulating film 182af and the sacrificial layer 118 are preferably made of an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by an ALD method.

[0349] Note that the material that can be used for the insulating film 182af is not limited to this, and any material that can be used for the sacrificial layer 128 can be used as appropriate.

[0350] Next, insulating layer 182b is formed between two adjacent light-emitting devices and between adjacent light-emitting and light-receiving devices (FIG. 20E). FIG. 20E shows an example in which insulating layer 182b is formed to have a width greater than the width between the devices.

[0351] It is preferable to use a photosensitive resin as the insulating layer 182b. In this case, after first forming a resin film, the resin film is exposed to light through a photomask, and then a development process is performed to form the insulating layer 182b. Thereafter, the upper part of the insulating layer 182b may be removed by ashing or the like to adjust the height of the upper surface of the insulating layer 182b (FIG. 21A).

[0352] When a non-photosensitive resin is used as the insulating layer 182b, the insulating layer 182b can be formed by depositing the resin film and then removing the upper part of the resin film by ashing until the surfaces of the sacrificial layers 118 and 128 are exposed until the thickness is optimized.

[0353] [Etching of insulating film 182af, sacrificial layer 118, and sacrificial layer 128] Next, the insulating film 182af, the sacrificial layer 118a, the sacrificial layer 118b, the sacrificial layer 118c, the sacrificial layer 128, and the sacrificial layer 128p in the region not covered by the insulating layer 182b are removed by etching, exposing the upper surface of the second functional layer 116, the upper surface of the fourth functional layer 156, and the upper surface of the electrode 111p. Also, the insulating layer 182a is formed in the region covered by the insulating layer 182b (FIG. 21B). At this time, the upper portion of the insulating layer 182b is removed, and the height of the upper surface of the insulating layer 182b may be lowered.

[0354] It is preferable to etch the insulating film 182af and the sacrificial layers 118a, 118b, 118c, 128, and 128p in the same process. In particular, wet etching, which causes little etching damage to the second functional layer 116a, 116b, 116c, and 156, can be suitably used for etching the sacrificial layers 118a, 118b, 118c, 128, and 128p. For example, it is preferable to use wet etching using a tetramethylammonium hydroxide aqueous solution (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0355] Alternatively, it is preferable to remove either or both of the insulating film 182af and the sacrificial layer 118 by dissolving them in a solvent such as water or alcohol. Here, various alcohols such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin can be used as the alcohol that can dissolve the insulating film 182af and the sacrificial layer 118.

[0356] Since the sacrificial layers 118a to 118c and the sacrificial layers 128 and 128p are removed in the same process, it is preferable that the etching times required for their removal are approximately the same. For example, it is preferable that the sacrificial layers 118a to 118c and the sacrificial layers 128 and 128p are made of the same material. Furthermore, it is preferable that the sacrificial layers 118a to 118c and the sacrificial layers 128 and 128p have approximately the same film thickness.

[0357] After removing the sacrificial layers 118a, 118b, 118c, 128, and 128p, it is preferable to perform a drying treatment to remove water contained inside and adsorbed on the surfaces of the light-emitting layer 112, the active layer 157, the first functional layer 115, the second functional layer 116, the third functional layer 155, the fourth functional layer 156, and the electrode 111p. For example, it is preferable to perform a heat treatment in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced-pressure atmosphere is preferable because it enables drying at a lower temperature.

[0358] [Formation of Common Electrode 123] Subsequently, a common electrode 123 is formed to cover the second functional layer 116a, the second functional layer 116b, the second functional layer 116c, the fourth functional layer 156, and the electrode 111p (FIG. 21C). The common electrode 123 is electrically connected to the electrode 111p at the connection portion 140.

[0359] The common electrode 123 can be formed by evaporation or sputtering. Alternatively, the common electrode 123 may be formed by laminating a film formed by evaporation and a film formed by sputtering. The common electrode 123 is preferably formed using a shielding mask. The shielding mask is preferably provided so that the common electrode 123 is not exposed at the edge of the display device 100, that is, so that the edge of the common electrode 123 is located inside the edge of the display device 100.

[0360] It is not necessary to use a shielding mask when forming the common electrode 123. As shown in FIG. 21D, a conductive layer 123f that will become the common electrode 123 is formed. Next, a resist mask 135 is formed on the conductive layer 123f, and the conductive layer 123f is processed to form the common electrode 123. At this time, it is preferable to process the common electrode 123 so that the common electrode 123 is not exposed at the edge of the display device, that is, so that the edge of the common electrode 123 is located inside the edge of the display device.

[0361] [Formation of protective layer 125] Next, a protective layer 125 is formed on the common electrode 123. The inorganic insulating film used for the protective layer 125 is preferably formed by sputtering, PECVD, or ALD. The ALD method is particularly preferred because it has excellent step coverage and is less likely to cause defects such as pinholes. The organic insulating film is preferably formed by inkjet printing, because it can form a uniform film in the desired region.

[0362] In this manner, the display device shown in FIG. 6A can be manufactured.

[0363] In a display device according to one embodiment of the present invention, the light-emitting layer of the light-emitting device can be formed using an FMM, and the active layer of the light-receiving device can be formed without using an FMM. With this structure, a display device having a highly accurate light detection function can be obtained.

[0364] <Production method example 2> A method for manufacturing the display device shown in Fig. 11A will be described. Fig. 22A and Fig. 22B are schematic cross-sectional views of each step in the manufacturing method of the display device. Note that descriptions of parts that overlap with the above-described Manufacturing Method Example 1 will be omitted, and only differences will be described.

[0365] First, in the same manner as in Fabrication Method Example 1, layers up to insulating layer 182b are formed (FIG. 20E).

[0366] [Etching of insulating film 182af, sacrificial layer 118, and sacrificial layer 128] Subsequently, the insulating film 182af, the sacrificial layers 118a, 118b, 118c, 128, and 128p in the region not covered by the insulating layer 182b are removed by etching to expose the upper surface of the second functional layer 116, the upper surface of the fourth functional layer 156, and the upper surface of the electrode 111p. Also, the insulating layer 182a is formed in the region covered by the insulating layer 182b (FIG. 22A).

[0367] At this time, the sacrificial layer 118a may remain between the insulating layer 182a and the second functional layer 116a. Similarly, the sacrificial layer 118b may remain between the insulating layer 182a and the second functional layer 116b. The sacrificial layer 118c may remain between the insulating layer 182a and the second functional layer 116c. The sacrificial layer 128 may remain between the insulating layer 182a and the fourth functional layer 156. The etching of the insulating film 182af, the sacrificial layer 118, and the sacrificial layer 128 can be performed as described above, and therefore a detailed description thereof will be omitted.

[0368] After removing sacrificial layers 118a, 118b, 118c, 128, and 128p, it is preferable to perform a drying process to remove water contained inside and adsorbed on the surfaces of light-emitting layer 112, active layer 157, first functional layer 115, second functional layer 116, third functional layer 155, fourth functional layer 156, and electrode 111p. The above description of the drying process can be referred to, and therefore a detailed description thereof will be omitted.

[0369] [Formation of Common Electrode 123] Next, the common electrode 123 is formed to cover the insulating layer 182a, the insulating layer 182b, the second functional layer 116, the fourth functional layer 156, and the electrode 111p (FIG. 22B). The formation of the common electrode 123 can be referred to in the above description, and therefore a detailed description thereof will be omitted.

[0370] [Formation of protective layer 125] Subsequently, the protective layer 125 is formed on the common electrode 123. The above description can be referred to for the formation of the protective layer 125, and therefore a detailed description thereof will be omitted.

[0371] In this manner, the display device shown in FIG. 11A can be manufactured.

[0372] <Production method example 3> A method for manufacturing the display device shown in Fig. 16A will be described. Fig. 23A to Fig. 25E are schematic cross-sectional views of each step in the manufacturing method of the display device. Note that descriptions of parts that overlap with the above-described Manufacturing Method Example 1 will be omitted, and only differences will be described.

[0373] First, similarly to the manufacturing method example 1, the electrodes 111a, 111b, 111c, 111d, and 111p are formed on the substrate 101 (FIG. 18A).

[0374] [Formation of functional film 155f, active film 157f, and functional film 156f] Next, functional film 155f, which will later become third functional layer 155, active film 157f, which will later become active layer 157, and functional film 156f, which will later become fourth functional layer 156, are deposited in this order on electrode 111a, electrode 111b, electrode 111c, electrode 111d, electrode 111p, and substrate 101. The above description can be referred to for the formation of functional film 155f, active film 157f, and functional film 156f, and therefore detailed description thereof will be omitted.

[0375] [Formation of Sacrificial Films 128f and 129f] Subsequently, a sacrificial film 128f and a sacrificial film 129f are formed in this order on the functional film 156f (FIG. 23A).

[0376] The thickness of the sacrificial film 128f is preferably 10 nm to 3 μm, more preferably 10 nm to 2 μm, even more preferably 10 nm to 1 μm, even more preferably 20 nm to 1 μm, even more preferably 20 nm to 500 nm, even more preferably 30 nm to 500 nm, even more preferably 30 nm to 400 nm, even more preferably 40 nm to 400 nm, even more preferably 40 nm to 300 nm, even more preferably 50 nm to 300 nm, even more preferably 50 nm to 200 nm, even more preferably 50 nm to 100 nm. Furthermore, the thickness of the sacrificial film 128f is preferably thicker than the thickness of the first functional layer 115.

[0377] As for the sacrificial film 129f, the above description can be referred to, and therefore a detailed description thereof will be omitted.

[0378] [Formation of Sacrificial Layer 129 and Sacrificial Layer 128] Subsequently, a resist mask 133 and a resist mask 133p are formed on the sacrificial film 129f in the region overlapping with the electrode 111d and on the sacrificial film 129f in the region overlapping with the connecting portion 140 (FIG. 23B).

[0379] Subsequently, the sacrificial film 129f in the area not covered by either the resist mask 133 or the resist mask 133p is removed by etching, thereby forming the sacrificial layer 129 and the sacrificial layer 129p.

[0380] Subsequently, the resist mask 133 is removed (FIG. 23C).

[0381] Next, using the sacrificial layer 129 and the sacrificial layer 129p as a mask, the sacrificial film 128f in the area not covered by either the sacrificial layer 129 or the sacrificial layer 129p is removed by etching, forming a sacrificial layer 128 in the area overlapping with the electrode 111d, and forming a sacrificial layer 128p in contact with the upper surface of the electrode 111p.

[0382] [Formation of the third functional layer 155, the active layer 157, and the fourth functional layer 156] Next, the sacrificial layer 129 and the sacrificial layer 129p are removed by etching, and the functional film 156f, the active film 157f, and the functional film 155f in the areas not covered by either the sacrificial layer 128 or the sacrificial layer 128p are removed by etching to form the fourth functional layer 156, the active layer 157, and the third functional layer 155 (Figure 23D).

[0383] By etching the functional film 156f, the active film 157f, and the functional film 155f and the sacrificial layer 129 and the sacrificial layer 129p in the same process, the process can be simplified, the productivity of the display device can be increased, and the manufacturing cost can be reduced.

[0384] In particular, the etching of the functional film 156f, the active film 157f, and the functional film 155f can be referred to the above description, and therefore detailed description thereof will be omitted.

[0385] [Formation of the first functional layer 115] Next, first functional layer 115, first functional layer 115d, and first functional layer 115p are formed to cover substrate 101, electrode 111a, electrode 111b, electrode 111c, electrode 111p, third functional layer 155, active layer 157, fourth functional layer 156, sacrificial layer 128, and sacrificial layer 128p.

[0386] Here, a region where the first functional layer is not formed is formed between the region where the sacrificial layer 128 or 128p is provided and the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. That is, the first functional layer is provided separately in the region where the sacrificial layer 128 or 128p is provided and the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. FIG. 24A shows, as the separately provided first functional layers, first functional layer 115d formed on the sacrificial layer 128, first functional layer 115p formed on the sacrificial layer 128p, and first functional layer 115 formed in the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. Note that the first functional layer 115 is provided in contact with the upper surfaces of electrodes 111a, 111b, and 111c.

[0387] The thickness of the sacrificial film 128f that will become the sacrificial layer 128 or the sacrificial layer 128p is preferably within the aforementioned range. If the thickness of the sacrificial film 128f is too thin, it may be impossible to provide the first functional layer 115, the first functional layer 115d, and the first functional layer 115p separately. Furthermore, if the thickness of the sacrificial film 128f is too thick, it may be difficult to process the sacrificial film 128f. By setting the thickness of the sacrificial film 128f within the aforementioned range, it is possible to provide the first functional layer 115, the first functional layer 115d, and the first functional layer 115p separately, and it is also possible to easily process the sacrificial film 128f.

[0388] [Formation of Light-Emitting Layers 112R, 112G, and 112B] Subsequently, island-shaped light-emitting layers 112R are formed on the first functional layer 115 in the region overlapping with the electrode 111a (FIG. 24B). The light-emitting layers 112R are preferably formed using FMM191R.

[0389] Next, using FMM191G, a light-emitting layer 112G is formed on the first functional layer 115 in the area overlapping with the electrode 111b (FIG. 24C).

[0390] Next, using FMM 191B, light-emitting layer 112B is formed on first functional layer 115 in the area overlapping with electrode 111c (FIG. 24D).

[0391] Regarding the formation of the light-emitting layers 112R, 112G, and 112B, the above description can be referred to, and therefore detailed description thereof will be omitted.

[0392] The order in which the light-emitting layers 112R, 112G, and 112B are formed is not particularly limited.

[0393] [Formation of the second functional layer 116] Next, second functional layer 116, second functional layer 116d, and second functional layer 116p are formed to cover light-emitting layer 112R, light-emitting layer 112G, light-emitting layer 112B, first functional layer 115, first functional layer 115d, and first functional layer 115p.

[0394] Here, a region where the second functional layer is not formed is formed between the region where the sacrificial layer 128 or 128p is provided and the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. That is, the second functional layer is provided separately (also referred to as a step) between the region where the sacrificial layer 128 or 128p is provided and the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. FIG. 25A shows, as the separately provided second functional layer, the second functional layer 116d formed on the sacrificial layer 128, the second functional layer 116p formed on the sacrificial layer 128p, and the second functional layer 116 formed in the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. The second functional layer 116d is provided in contact with the first functional layer 115d. The second functional layer 116p is provided in contact with the first functional layer 115p. The second functional layer 116 is provided in contact with the first functional layer 115. In this case, the end of the second functional layer 116 may be located inside the end of the first functional layer 115.

[0395] The thickness of the sacrificial film 128f that will become the sacrificial layer 128 or the sacrificial layer 128p is preferably within the aforementioned range. If the thickness of the sacrificial film 128f is too thin, it may be impossible to provide the second functional layer 116, the second functional layer 116d, and the second functional layer 116p separately. By setting the thickness of the sacrificial film 128f within the aforementioned range, the second functional layer 116, the second functional layer 116d, and the second functional layer 116p can be provided separately.

[0396] [Removal of Sacrificial Layer 128 and Sacrificial Layer 128p] Next, the sacrificial layer 128 and the sacrificial layer 128p are removed. At this time, the first functional layer 115d and the second functional layer 116d on the sacrificial layer 128, and the first functional layer 115p and the second functional layer 116p on the sacrificial layer 128p are also removed, exposing the upper surface of the fourth functional layer 156 and the upper surface of the electrode 111p (FIG. 25B).

[0397] The sacrificial layer 128 and the sacrificial layer 128p are preferably removed using a method that minimizes damage to the first functional layer 115, the second functional layer 116, the third functional layer 155, the active layer 157, the fourth functional layer 156, and the electrode 111p. Wet etching can be suitably used to remove the sacrificial layer 128 and the sacrificial layer 128p. By dissolving the sacrificial layer 128, the first functional layer 115d and the second functional layer 116d on the sacrificial layer 128 are simultaneously removed (also referred to as lift-off). Similarly, by dissolving the sacrificial layer 128p, the first functional layer 115p and the second functional layer 116p on the sacrificial layer 128p are simultaneously removed (lift-off). By using lift-off, the first functional layer 115d, the second functional layer 116d, the first functional layer 115p, and the second functional layer 116p can be removed without damaging the first functional layer 115 and the second functional layer 116.

[0398] After removing the sacrificial layer 128 and the sacrificial layer 128p, it is preferable to perform a drying process to remove water contained inside the light-emitting layer 112, the active layer 157, the first functional layer 115, the second functional layer 116, the third functional layer 155, the fourth functional layer 156, and the electrode 111p, as well as water adsorbed on the surface.

[0399] [Formation of insulating film 182af and insulating layer 182b] Subsequently, an insulating film 182af is formed to cover the second functional layer 116, the fourth functional layer 156, the electrode 111p, and the substrate 101. The above description can be referred to for the formation of the insulating film 182af, and therefore a detailed description thereof will be omitted.

[0400] Next, an insulating layer 182b is formed between two adjacent light-emitting devices and between an adjacent light-emitting device and a light-receiving device (FIG. 25C). The above description can be referred to for the formation of the insulating layer 182b, and therefore a detailed description thereof will be omitted.

[0401] [Etching of insulating film 182af] Next, the insulating film 182af in the region not covered by the insulating layer 182b is removed by etching to expose the upper surface of the second functional layer 116, the upper surface of the fourth functional layer 156, and the upper surface of the electrode 111p. Also, the insulating layer 182a is formed in the region covered by the insulating layer 182b (FIG. 25D). The etching of the insulating film 182af can be referred to above, and therefore a detailed description thereof will be omitted.

[0402] [Formation of Common Electrode 123] Subsequently, the common electrode 123 is formed to cover the second functional layer 116, the fourth functional layer 156, and the electrode 111p (FIG. 25E). The common electrode 123 is electrically connected to the electrode 111p at the connection portion 140.

[0403] [Formation of protective layer 125] Subsequently, a protective layer 125 is formed on the common electrode 123 .

[0404] In this manner, the display device shown in FIG. 16A can be manufactured.

[0405] This completes the description of an example of a method for manufacturing a display device.

[0406] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, a light-emitting device and a light-receiving device can be separately fabricated over the same substrate. Furthermore, the light-emitting device and the light-receiving device can have no common components other than a common electrode. This can improve the signal-to-noise ratio of the light-receiving device, resulting in a display device having a high-precision light-receiving device. Furthermore, the display device can consume less power.

[0407] <Pixel layout> The pixel layout will now be described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0408] Examples of the top surface shape of the subpixel include a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. Here, the top surface shape of the subpixel corresponds to the top surface shape of the light-emitting region of a light-emitting device or the light-receiving region of a light-receiving device.

[0409] 4A, each pixel 103 is configured with two rows and three columns. The pixel 103 has three subpixels (subpixels 120R, 120G, and 120B) in the top row (first row) and one subpixel (subpixel 130) in the bottom row (second row). In other words, the pixel 103 has the subpixel 120R in the left column (first column), the subpixel 120G in the center column (second column), and the subpixel 120B in the right column (third column), and further has the subpixels 130 across these three columns.

[0410] In the present embodiment and the like, in order to clearly explain the pixel layout, the horizontal direction (X direction) of the drawings is defined as the row direction, and the vertical direction (Y direction) is defined as the column direction. However, this is not limited to this, and the row direction and the column direction can be interchanged. Therefore, in this specification and the like, one of the row direction and the column direction may be referred to as the first direction, and the other of the row direction and the column direction may be referred to as the second direction. The second direction is perpendicular to the first direction. Note that, when the top surface shape of the display unit is rectangular, the first direction and the second direction do not have to be parallel to the straight line portions of the outline of the display unit. Furthermore, the top surface shape of the display unit is not limited to a rectangle, but may be a polygon or a curved shape (circle, ellipse, etc.), and the first direction and the second direction can be any direction relative to the display unit.

[0411] In the present embodiment and the like, in order to explain the pixel layout in an easy-to-understand manner, the order of the sub-pixels is shown from the left of the drawing, but this is not limited to this and can be changed to the order from the right. Similarly, the order of the sub-pixels is shown from the top of the drawing, but this is not limited to this and can be changed to the order from the bottom.

[0412] A pixel arrangement different from that in FIG. 4A is shown in FIGS. 26A and 26B.

[0413] 26A, a stripe arrangement is applied to pixels 103. The pixels 103 have subpixels 120R, 120G, 120B, and 130 in the row direction.

[0414] 26B, a matrix arrangement is applied to pixels 103. Each pixel 103 is configured with two rows and two columns, with the top row (first row) having two subpixels (subpixels 120R and 120G) and the bottom row (second row) having two subpixels (subpixels 120B and 130). In other words, each pixel 103 has two subpixels (subpixels 120R and 130) in the left column (first column) and two subpixels (subpixels 120G and 120B) in the right column (second column).

[0415] The positions of the sub-pixels are not particularly limited. For example, the positions of the sub-pixel 120R and the sub-pixel 130 may be interchanged.

[0416] The areas of the light-emitting regions of the light-emitting devices in each subpixel may be the same or different. For example, the areas of the light-emitting regions can be determined depending on the lifetime of the light-emitting devices. It is preferable to make the area of ​​the light-emitting region of a light-emitting device with a short lifetime larger than the areas of the light-emitting regions of other light-emitting devices. By increasing the area of ​​the light-emitting region, the current density applied to the light-emitting device is reduced, thereby extending the lifetime of the light-emitting device. In other words, a highly reliable display device can be obtained.

[0417] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0418] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0419] (Embodiment 2) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0420] The display device of the present embodiment can be a high-definition display device, and can therefore be used as a display unit of a wristwatch-type or bracelet-type information terminal (wearable device), a head-mounted display or other VR device, or a head-mounted wearable device such as a glasses-type AR device.

[0421] The display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0422] <Display module> 27A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100F described below.

[0423] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0424] 27B is a perspective view showing a schematic configuration of the substrate 291 side. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 consisting of a plurality of wirings.

[0425] The pixel section 284 has a plurality of pixels 284a arranged in a matrix. An enlarged view of one pixel 284a is shown on the right side of Fig. 27B. The pixel 284a has a light-emitting device 110R that emits red light, a light-emitting device 110G that emits green light, a light-emitting device 110B that emits blue light, and a light-receiving device 150.

[0426] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged in a matrix.

[0427] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a may be configured to have five circuits that control the driving of elements. For example, the pixel circuit 283a may be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0428] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0429] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may also be mounted on the FPC 290.

[0430] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a are arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0431] Such a display module 280 has extremely high resolution and can therefore be suitably used in VR devices such as head-mounted displays or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices having relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0432] <Display device 100A> The display device 100A shown in FIG. 28 includes a substrate 301, a light-emitting device 110R, a light-emitting device 110G, a light-receiving device 150, a capacitor 240, and a transistor 310.

[0433] 27A and 27B. The layered structure from substrate 301 to insulating layer 255b corresponds to substrate 101 in the first embodiment.

[0434] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0435] An isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0436] An insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0437] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0438] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to the source or drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0439] An insulating layer 255a is provided to cover the capacitor 240, and an insulating layer 255b is provided on the insulating layer 255a.

[0440] The insulating layer 255a and the insulating layer 255b can each be preferably formed using various inorganic insulating films such as an insulating oxide film, an insulating nitride film, an oxynitride insulating film, and an insulating nitride oxide film. The insulating layer 255a is preferably formed using an insulating oxide film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, it is preferable to use a silicon oxide film as the insulating layer 255a and a silicon nitride film as the insulating layer 255b. The insulating layer 255b preferably functions as an etching protective film. Alternatively, a nitride insulating film or a nitride oxide insulating film may be used as the insulating layer 255a, and an oxide insulating film or an oxynitride insulating film may be used as the insulating layer 255b. Although this embodiment illustrates an example in which a recess is provided in the insulating layer 255b, the insulating layer 255b does not necessarily have a recess.

[0441] Light-emitting device 110R, light-emitting device 110G, and light-receiving device 150 are provided on insulating layer 255b. The light-emitting device 110R, light-emitting device 110G, and light-receiving device 150 can have the same configurations as the light-emitting device and light-receiving device shown in Embodiment 1, respectively. Insulators are provided between adjacent light-emitting devices and between adjacent light-emitting devices and light-receiving devices. Figure 28 shows a configuration in which insulating layer 182a and insulating layer 182b on insulating layer 182a are provided in this region.

[0442] The electrodes 111a, 111b, and 111d of the light-emitting device are electrically connected to the source or drain of the transistor 310 via a plug 256 embedded in the insulating layers 255a and 255b, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255b and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0443] A protective layer 131 is provided on the light-emitting device 110R, the light-emitting device 110G, and the light-receiving device 150. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting devices to the substrate 120, refer to the first embodiment. The substrate 120 corresponds to the substrate 292 in FIG. 27A.

[0444] The upper surface edges of the electrodes 111a, 111b, and 111d are not covered with an insulating layer, which allows the distance between adjacent light-emitting devices to be extremely narrow, thereby enabling a high-definition or high-resolution display device.

[0445] Although Figure 4B and other figures show an example in which light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B have EL layers 175R, 175G, and 175B with different configurations, EL layers 175R, 175G, and 175B may have the same configuration.

[0446] For example, the light-emitting device 110R, the light-emitting device 110G, and the light-emitting device 110B may all be configured to emit white light. Furthermore, a colored layer may be provided in the region overlapping the light-emitting device 110R. By providing a colored layer that transmits red light in the region overlapping the light-emitting device 110R, light emitted from the light-emitting device 110R is extracted as red light to the outside of the display device through the colored layer. Similarly, by providing a colored layer that transmits green light in the region overlapping the light-emitting device 110G, light emitted from the light-emitting device 110G is extracted as green light to the outside of the display device through the colored layer. By providing a colored layer that transmits blue light in the region overlapping the light-emitting device 110B, light emitted from the light-emitting device 110B is extracted as blue light to the outside of the display device through the colored layer.

[0447] <Display device 100B> 29 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

[0448] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0449] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 131 or the insulating layer 332.

[0450] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be made of an inorganic insulating film that can be used for the protective layer 131.

[0451] A conductive layer 342 is provided on the back surface of substrate 301B (the surface opposite to substrate 120) under insulating layer 345. Conductive layer 342 is preferably provided so as to be embedded in insulating layer 335. Furthermore, the lower surfaces of conductive layer 342 and insulating layer 335 are preferably flattened. Here, conductive layer 342 is electrically connected to plug 343.

[0452] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. Furthermore, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0453] The substrates 301A and 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be bonded well.

[0454] It is preferable that the conductive layers 341 and 342 are made of the same conductive material. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable that copper be used for the conductive layers 341 and 342. This allows the use of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0455] <Display device 100C> The display device 100C shown in FIG. 30 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0456] 30, by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0457] <Display device 100D> The display device 100D shown in FIG. 31 differs from the display device 100A mainly in the configuration of the transistors.

[0458] The transistor 320 is a transistor in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed (hereinafter referred to as an OS transistor).

[0459] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0460] 27A and 27B. The layered structure from substrate 331 to insulating layer 255b corresponds to substrate 101 in Embodiment 1. Substrate 331 can be an insulating substrate or a semiconductor substrate.

[0461] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be formed using a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0462] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0463] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0464] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like to the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be formed using an insulating film similar to that of the insulating layer 332.

[0465] An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264. An insulating layer 323 and a conductive layer 324 are buried inside the opening and are in contact with the side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and the top surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0466] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0467] The insulating layers 264 and 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to that used for the insulating layers 328 and 332.

[0468] The plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0469] <Display device 100E> A display device 100E illustrated in FIG. 32 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0470] The transistor 320A, the transistor 320B, and the surrounding configuration can be adapted from the display device 100D.

[0471] Note that although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0472] <Display device 100F> A display device 100F shown in FIG. 33 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide.

[0473] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and a transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0474] The transistor 320 can be used as a transistor included in a pixel circuit. The transistor 310 can be used as a transistor included in a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) for driving the pixel circuit. The transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit or a memory circuit.

[0475] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0476] <Display device 100G> FIG. 34 shows a perspective view of display device 100G, and FIG. 35A shows a cross-sectional view of display device 100G.

[0477] Display device 100G has a configuration in which substrate 152 and substrate 151 are bonded together. In Fig. 34, substrate 152 is clearly indicated by a dashed line.

[0478] The display device 100G has a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Fig. 34 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Fig. 34 can also be said to be a display module having the display device 100G, an IC (integrated circuit), and an FPC.

[0479] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one or more sides of the display portion 162. There may be one or more connection portions 140. FIG. 34 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0480] The circuit 164 can be, for example, a scanning line driver circuit.

[0481] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0482] 34 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100G and the display module may be configured without an IC. The IC may also be mounted on an FPC by a COF method or the like.

[0483] Figure 35A shows an example of a cross section of the display device 100G when cutting a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection unit 140, and a portion of the area including the end portion.

[0484] A display device 100G shown in FIG. 35A includes a transistor 201, a transistor 205, a light-emitting device 110R, a light-emitting device 110G, a light-receiving device 150, and the like between a substrate 151 and a substrate 152.

[0485] The light emitting device 110R, the light emitting device 110G, and the light receiving device 150 can refer to the first embodiment, except that the configuration of the pixel electrodes is different.

[0486] The light-emitting device 110R includes a conductive layer 113a, a conductive layer 126a on the conductive layer 113a, and a conductive layer 127a on the conductive layer 126a. The conductive layers 113a, 126a, and 127a may all be referred to as pixel electrodes, or some of them may be referred to as pixel electrodes.

[0487] Light-emitting device 110G includes conductive layer 113b, conductive layer 126b on conductive layer 113b, and conductive layer 127b on conductive layer 126b.

[0488] The light-receiving device 150 includes a conductive layer 113d, a conductive layer 126d on the conductive layer 113d, and a conductive layer 127d on the conductive layer 126d.

[0489] The conductive layer 113a is connected to a conductive layer 222b included in the transistor 205 through an opening in the insulating layer 214. An end of the conductive layer 126a is located outside an end of the conductive layer 113a. An end of the conductive layer 126a and an end of the conductive layer 127a are aligned or approximately aligned. For example, a conductive layer functioning as a reflective electrode can be used for the conductive layer 113a and the conductive layer 126a, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 127a.

[0490] Detailed explanations of conductive layer 113b, conductive layer 126b, and conductive layer 127b in light-emitting device 110G, and conductive layer 113d, conductive layer 126d, and conductive layer 127d in light-receiving device 150 can be found in the descriptions of conductive layer 113a, conductive layer 126a, and conductive layer 127a, respectively, and will be omitted.

[0491] Recesses are formed in the conductive layers 113a, 113b, and 113d so as to cover the openings provided in the insulating layer 214. A layer 184 is buried in the recesses.

[0492] The layer 184 has a function of planarizing recesses of the conductive layer 113a, the conductive layer 113b, and the conductive layer 113d. Conductive layers 126a, 126b, and 126d, which are electrically connected to the conductive layer 113a, the conductive layer 113b, and the conductive layer 113d, are provided over the conductive layer 113a, the conductive layer 113b, and the conductive layer 113d and the layer 184. Therefore, regions overlapping with the recesses of the conductive layer 113a, the conductive layer 113b, and the conductive layer 113d can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0493] The layer 184 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 184. In particular, the layer 184 is preferably formed using an insulating material.

[0494] An insulating layer containing an organic material can be suitably used for the layer 184. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, or the like can be used for the layer 184. Alternatively, a photosensitive resin can be used for the layer 184. The photosensitive resin can be a positive-type material or a negative-type material.

[0495] By using a photosensitive resin, the layer 184 can be formed only by exposure and development steps, and the influence of dry etching, wet etching, or the like on the surfaces of the conductive layers 113a, 113b, and 113d can be reduced. Furthermore, by forming the layer 184 using a negative photosensitive resin, the layer 184 can sometimes be formed using the same photomask (exposure mask) as that used to form the opening in the insulating layer 214.

[0496] 35A shows an example in which the top surface of layer 184 has a flat portion, but this embodiment of the present invention is not limited to this. The top surface of layer 184 may have, for example, a configuration in which the center and its vicinity are recessed in cross section, i.e., a shape having a concave curved surface. Alternatively, the top surface of layer 184 may have a configuration in which the center and its vicinity are bulged in cross section, i.e., a shape having a convex curved surface. Alternatively, the top surface of layer 184 may have one or both of a convex curved surface and a concave curved surface. The number of convex curved surfaces and concave curved surfaces on the top surface of layer 184 is not limited and may be one or more.

[0497] The height of the upper surface of layer 184 and the height of the upper surface of conductive layer 113 may be the same or approximately the same, or may be different from each other. For example, the height of the upper surface of layer 184 may be lower or higher than the height of the upper surface of conductive layer 113.

[0498] The upper and side surfaces of the conductive layer 126a and the conductive layer 127a are covered by the EL layer 175R. Similarly, the upper and side surfaces of the conductive layer 126b and the conductive layer 127b are covered by the EL layer 175G. Furthermore, the upper and side surfaces of the conductive layer 126d and the conductive layer 127d are covered by the light-receiving layer 177. Therefore, the entire area where the conductive layer 126a and the conductive layer 126b are provided can be used as the light-emitting area of ​​the light-emitting device 110R and the light-emitting device 110G, thereby increasing the aperture ratio of the pixel. Similarly, the entire area where the conductive layer 126d is provided can be used as the light-receiving area of ​​the light-receiving device 150, thereby achieving a display device with high light-receiving sensitivity.

[0499] The side surfaces of the EL layer 175R, the EL layer 175G, and the light-receiving layer 177 are covered with insulating layers 182a and 182b, respectively. A sacrificial layer 118a is located between the EL layer 175R and the insulating layer 182a. A sacrificial layer 118b is located between the EL layer 175G and the insulating layer 182a, and a sacrificial layer 128 is located between the light-receiving layer 177 and the insulating layer 182a. A common electrode 123 is provided on the EL layer 175R, the EL layer 175G, the light-receiving layer 177, and the insulating layers 182a and 182b. The common electrode 123 is a continuous film provided in common to a plurality of light-emitting devices 110 and a plurality of light-receiving devices 150.

[0500] A protective layer 131 is provided on each of the light-emitting device 110R, the light-emitting device 110G, and the light-receiving device 150. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device. In FIG. 35A, the space between the substrates 152 and 151 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0501] In the connection portion 140, a conductive layer 186 is provided on the insulating layer 214. The conductive layer 186 has a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 113a, 113b, and 113d, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126d, and a conductive film obtained by processing the same conductive film as the conductive layers 127a, 127b, and 127d. The end of the conductive layer 186 is covered with a sacrificial layer 128p and insulating layers 182a and 182b. The common electrode 123 is provided on the conductive layer 186. The conductive layer 186 is electrically connected to the common electrode 123. The conductive layer 186 and the common electrode 123 may be electrically connected to each other directly or via another conductive layer.

[0502] The display device 100G is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 123) contains a material that transmits visible light.

[0503] The laminated structure from substrate 151 to insulating layer 214 corresponds to substrate 101 in the first embodiment.

[0504] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and in the same process.

[0505] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0506] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0507] The insulating layer 211, the insulating layer 213, and the insulating layer 215 are preferably formed using an inorganic insulating film. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0508] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This can prevent recesses from being formed in the insulating layer 214 during processing of the conductive layer 113a, the conductive layer 126a, the conductive layer 127a, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 113a, the conductive layer 126a, the conductive layer 127a, or the like.

[0509] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0510] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0511] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0512] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0513] The semiconductor layer of the transistor preferably includes a metal oxide (oxide semiconductor). That is, the display device of this embodiment preferably includes an OS transistor.

[0514] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0515] Alternatively, a transistor using silicon in a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0516] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0517] OS transistors have significantly higher field-effect mobility than transistors using amorphous silicon. Furthermore, OS transistors have significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), allowing them to retain charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of OS transistors can reduce the power consumption of display devices.

[0518] The off-state current of an OS transistor per 1 μm of channel width at room temperature is 1 aA (1 × 10 -18 A) Below, 1zA(1×10 -21 A) or less, or 1yA (1 x 10 -24 A) or less. Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1×10 -15 A) More than 1pA (1×10 - 12Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0519] To increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Because OS transistors have a higher source-drain breakdown voltage than Si transistors, a high voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0520] When the transistor operates in the saturation region, OS transistors can reduce the change in source-drain current relative to a change in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as the drive transistors in pixel circuits, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing to the light-emitting device. This allows for a wider range of gradations in the pixel circuit.

[0521] In terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, OS transistors can pass a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a drive transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when operating in the saturation region, OS transistors maintain almost no change in source-drain current even when the source-drain voltage increases, thereby stabilizing the light-emitting brightness of the light-emitting device.

[0522] As described above, by using an OS transistor as the drive transistor included in the pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission brightness," "multiple gradations," and "suppression of variation in light-emitting devices."

[0523] The semiconductor layer preferably contains, for example, indium, an element M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0524] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) for the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0525] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, or In:M:Zn=4:2:3. or a composition in the vicinity thereof, In:M:Zn=4:2:4.1 or a composition in the vicinity thereof, In:M:Zn=5:1:3 or a composition in the vicinity thereof, In:M:Zn=5:1:6 or a composition in the vicinity thereof, In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5:1:8 or a composition in the vicinity thereof, In:M:Zn=6:1:6 or a composition in the vicinity thereof, In:M:Zn=5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0526] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3 and the atomic ratio of Zn is 2 to 4. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 5 and less than 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 0.1 and less than 2.

[0527] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types of structures.

[0528] All the transistors in the display portion 162 may be OS transistors, all the transistors in the display portion 162 may be Si transistors, or some of the transistors in the display portion 162 may be OS transistors and the rest may be Si transistors.

[0529] For example, by using both an LTPS transistor and an OS transistor in the display portion 162, a display device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. As a more preferable example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and to use an LTPS transistor as a transistor for controlling current.

[0530] For example, one of the transistors included in the display unit 162 functions as a transistor for controlling the current flowing through the light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0531] On the other hand, another transistor included in the display unit 162 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of pixels to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), and therefore power consumption can be reduced by stopping the driver when displaying a still image.

[0532] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0533] 35B and 35C show other examples of transistor configurations.

[0534] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. An insulating layer 218 covering the transistor may also be provided.

[0535] 35B shows an example in which the insulating layer 225 covers the top surface and side surface of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0536] 35C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 35C can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 35C, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215.

[0537] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 113a, 113b, and 113d, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126d, and a conductive film obtained by processing the same conductive film as the conductive layers 127a, 127b, and 127d. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0538] It is preferable to provide a light-shielding layer 117 on the surface of substrate 152 facing substrate 151. Light-shielding layer 117 can be provided between adjacent light-emitting devices, on connecting portions 140, on circuits 164, etc. Various optical members can be disposed on the outside of substrate 152.

[0539] By providing the protective layer 131 that covers the light emitting device, it is possible to prevent impurities such as water from entering the light emitting device, thereby improving the reliability of the light emitting device.

[0540] The substrate 151 and the substrate 152 can be made of the same material as can be used for the substrate 120 .

[0541] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0542] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0543] <Display device 100H> A modified example of display device 100G is shown in Fig. 36. Display device 100H differs from display device 100G mainly in that display device 100H has substrate 153, adhesive layer 159, and insulating layer 212 instead of substrate 151, and has substrate 154, adhesive layer 160, and insulating layer 158 instead of substrate 152.

[0544] In the display device 100H, the substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 159. Furthermore, the substrate 154 and the insulating layer 158 are bonded together by an adhesive layer 160.

[0545] 36 shows a configuration in which a filter 149 that cuts ultraviolet light is provided in the region overlapping with the light receiving device 150. Note that a configuration in which the filter 149 is not provided may also be used.

[0546] When fabricating the display device 100H shown in FIG. 36, first, a first fabrication substrate provided with the insulating layer 212, the transistors, the light-emitting device 110, the light-receiving device 150, and the like is bonded to a second fabrication substrate provided with the insulating layer 158, the light-shielding layer 117, the filter 149, and the like using an adhesive layer 142. Then, the first fabrication substrate is peeled off, and a substrate 153 is attached to the exposed surface using an adhesive layer 159. In this way, the components formed on the first fabrication substrate are transferred to the substrate 153. Furthermore, the second fabrication substrate is peeled off, and a substrate 154 is attached to the exposed surface using an adhesive layer 160. In this way, the components formed on the second fabrication substrate are transferred to the substrate 154. The substrates 153 and 154 are preferably flexible. This allows the display device 100H to be flexible. That is, the display device 100H can be a flexible display.

[0547] The insulating layer 212 and the insulating layer 158 can be formed using the inorganic insulating film that can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215, respectively.

[0548] This embodiment mode can be combined with other embodiment modes as appropriate.

[0549] (Embodiment 3) In this embodiment, a light-emitting device that can be used for a display device of one embodiment of the present invention will be described.

[0550] <Example of light-emitting device configuration> As shown in FIG. 37A, the light-emitting device has an EL layer 686 between a pair of electrodes (electrode 672 and electrode 688). The EL layer 686 can be composed of multiple layers, such as a layer 4420, a light-emitting layer 4411, and a layer 4430. The layer 4420 can have, for example, a layer containing a substance with high electron-injecting properties (electron-injecting layer) and a layer containing a substance with high electron-transporting properties (electron-transporting layer). The light-emitting layer 4411 contains, for example, a light-emitting compound. The layer 4430 can have, for example, a layer containing a substance with high hole-injecting properties (hole-injecting layer) and a layer containing a substance with high hole-transporting properties (hole-transporting layer).

[0551] A structure having the layer 4420, the light-emitting layer 4411, and the layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 37A is referred to as a single structure in this specification.

[0552] Fig. 37B shows a modified example of EL layer 686 included in the light-emitting device shown in Fig. 37A. Specifically, the light-emitting device shown in Fig. 37B has a layer 4430-1 on electrode 672, a layer 4430-2 on layer 4430-1, a light-emitting layer 4411 on layer 4430-2, a layer 4420-1 on light-emitting layer 4411, a layer 4420-2 on layer 4420-1, and an electrode 688 on layer 4420-2. For example, when electrode 672 is an anode and electrode 688 is a cathode, layer 4430-1 functions as a hole injection layer, layer 4430-2 functions as a hole transport layer, layer 4420-1 functions as an electron transport layer, and layer 4420-2 functions as an electron injection layer. Alternatively, when the electrode 672 is a cathode and the electrode 688 is an anode, the layer 4430-1 functions as an electron injection layer, the layer 4430-2 functions as an electron transport layer, the layer 4420-1 functions as a hole transport layer, and the layer 4420-2 functions as a hole injection layer. Such a layer structure allows carriers to be efficiently injected into the light-emitting layer 4411, and makes it possible to increase the efficiency of carrier recombination in the light-emitting layer 4411.

[0553] As shown in FIG. 37C, a configuration in which a plurality of light-emitting layers (light-emitting layer 4411, light-emitting layer 4412, light-emitting layer 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0554] As shown in Figure 37D, a configuration in which multiple light-emitting units (EL layer 686a, EL layer 686b) are connected in series via an intermediate layer (charge generation layer) 4440 is referred to as a tandem structure in this specification. Note that, although the configuration shown in Figure 37D is referred to as a tandem structure in this specification, it is not limited to this, and for example, the tandem structure may also be referred to as a stack structure. Note that by using a tandem structure, a light-emitting device capable of emitting light with high brightness can be obtained.

[0555] 37C and 37D, the layer 4420 and the layer 4430 may have a laminated structure made up of two or more layers, as shown in FIG. 37B.

[0556] The light-emitting device can emit light of red, green, blue, cyan, magenta, yellow, white, or the like, depending on the material of the EL layer 686. Furthermore, the color purity can be further improved by providing the light-emitting device with a microcavity structure.

[0557] A light-emitting device that emits white light preferably has a configuration in which two or more types of light-emitting materials are included in the light-emitting layer. To obtain white light emission, it is sufficient to select two types of light-emitting materials such that the light emitted by each of the two types of light-emitting materials has a complementary color relationship. For example, a light-emitting device that emits white light as a whole can be obtained by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary colors. When three or more types of light-emitting materials are used, it is sufficient to make the emission colors of each material combine to produce a configuration in which the light-emitting device as a whole emits white light. The same applies to light-emitting devices having three or more light-emitting layers.

[0558] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Alternatively, it is preferable that the light-emitting layer contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials contains spectral components of two or more colors of R, G, and B.

[0559] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0560] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0561] (Fourth embodiment) In this embodiment, a structure of a light-emitting and receiving device that can be used in a display device of one embodiment of the present invention will be described. A structure in which a light-emitting and receiving device is added to the above-described display device can be used. Alternatively, a structure in which a light-receiving device is replaced with a light-emitting and receiving device can be used. The display device of one embodiment of the present invention can have, for example, a light-emitting device, a light-receiving device, and a light-emitting and receiving device. Alternatively, the display device of one embodiment of the present invention can have a light-emitting device and a light-emitting and receiving device.

[0562] The light-receiving and light-emitting device has both a light-emitting function and a light-receiving function. Here, a light-receiving and light-emitting device that emits red light and has a light-receiving function will be described as an example. Note that the method for manufacturing the light-receiving and light-emitting device can be referenced to the description of the method for manufacturing the light-receiving device described above, and therefore a detailed description thereof will be omitted. Alternatively, the method for manufacturing the light-receiving and light-emitting device can be referenced to the description of the method for manufacturing the light-emitting device described above, and therefore a detailed description thereof will be omitted.

[0563] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to the substrate on which the light-emitting device is formed, a bottom emission type that emits light toward the substrate on which the light-emitting device is formed, and a dual emission type that emits light to both sides.

[0564] In this embodiment, a top-emission display device will be described as an example.

[0565] The light emitting and receiving device shown in FIG. 38A has an electrode 377, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, a light emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and an electrode 378 stacked in this order.

[0566] The light-emitting layer 383R includes a light-emitting material that emits red light. The active layer 373 includes an organic compound that absorbs visible light. Alternatively, the active layer 373 may include an organic compound that absorbs visible light and infrared light. Alternatively, the active layer 373 may include an organic compound that absorbs visible light and an organic compound that absorbs infrared light. Note that it is preferable that the organic compound included in the active layer 373 does not easily absorb at least the light emitted by the light-emitting layer 383R. This allows the light receiving and emitting device to efficiently extract red light and further allows one or more of light with wavelengths shorter than red (e.g., green light and blue light) and light with wavelengths longer than red (e.g., infrared light) to be detected with high accuracy.

[0567] Fig. 38A is a schematic diagram showing how the light emitting and receiving device functions as a light emitting device, in which red (R) light emitted from the light emitting and receiving device is indicated by an arrow.

[0568] Figure 38B is a schematic diagram showing how the light emitting and receiving device functions as a light receiving device, with arrows indicating blue light (B) and green light (G) incident on the light emitting and receiving device.

[0569] By applying a voltage between the electrodes 377 and 378, the light receiving and emitting device can detect light incident on the device, generate electric charges, and extract the electric charges as a current.

[0570] The light-emitting and receiving device can be said to have a configuration in which an active layer 373 is added to a light-emitting device. In other words, the light-emitting and receiving device can be formed in parallel with the formation of the light-emitting device by simply adding a step of forming the active layer 373 to the manufacturing process of the light-emitting device. Furthermore, the light-emitting device and the light-emitting and receiving device can be formed on the same substrate. Therefore, it is possible to provide the display unit with either or both of an imaging function and a sensing function without significantly increasing the number of manufacturing steps.

[0571] There are no limitations on the stacking order of the light-emitting layer 383R and the active layer 373. Figures 38A and 38B show an example in which the active layer 373 is provided on the hole-transport layer 382, ​​and the light-emitting layer 383R is provided on the active layer 373. For example, the stacking order of the light-emitting layer 383R and the active layer 373 may be reversed.

[0572] The light-receiving and light-emitting device may not have at least one layer selected from the hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385. The light-receiving and light-emitting device may also have other functional layers, such as a hole blocking layer or an electron blocking layer.

[0573] In a light receiving / emitting device, a conductive film that transmits visible light is used for the electrode on the light extraction side, and a conductive film that reflects visible light is preferably used for the electrode on the non-light extraction side.

[0574] The functions and materials of the layers constituting the light receiving and emitting device are similar to those of the light emitting device and the light receiving device, and therefore detailed description thereof will be omitted.

[0575] 38C to 38G show examples of the stacked structure of the light emitting and receiving device.

[0576] The light emitting and receiving device shown in FIG. 38C includes an electrode 377, a hole injection layer 381, a hole transport layer 382, ​​a light emitting layer 383R, an active layer 373, an electron transport layer 384, an electron injection layer 385, and an electrode 378.

[0577] FIG. 38C shows an example in which a light-emitting layer 383R is provided on a hole-transporting layer 382, ​​and an active layer 373 is laminated on the light-emitting layer 383R.

[0578] As shown in FIGS. 38A to 38C, the active layer 373 and the light-emitting layer 383R may be in contact with each other.

[0579] A buffer layer is preferably provided between the active layer 373 and the light-emitting layer 383R. In this case, the buffer layer preferably has hole-transporting and electron-transporting properties. For example, a bipolar substance is preferably used for the buffer layer. Alternatively, the buffer layer may be at least one layer selected from a hole-injection layer, a hole-transporting layer, an electron-transporting layer, an electron-injection layer, a hole-blocking layer, and an electron-blocking layer. FIG. 38D shows an example in which a hole-transporting layer 382 is used as the buffer layer.

[0580] By providing a buffer layer between the active layer 373 and the light-emitting layer 383R, it is possible to suppress the transfer of excitation energy from the light-emitting layer 383R to the active layer 373. In addition, the buffer layer can be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light-emitting / receiving device having a buffer layer between the active layer 373 and the light-emitting layer 383R can achieve high light-emitting efficiency.

[0581] FIG. 38E shows an example of a laminated structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and an emitting layer 383R are laminated in this order on a hole injection layer 381. The hole transport layer 382-2 functions as a buffer layer. The hole transport layer 382-1 and the hole transport layer 281-2 may contain the same material or different materials. Alternatively, a layer that can be used as the buffer layer described above may be used instead of the hole transport layer 281-2. Alternatively, the positions of the active layer 373 and the emitting layer 383R may be interchanged.

[0582] 38F differs from the light emitting and receiving device shown in Fig. 38A in that it does not have the hole transport layer 382. In this way, the light emitting and receiving device does not have to have at least one layer among the hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385. The light emitting and receiving device may also have other functional layers such as a hole blocking layer or an electron blocking layer.

[0583] The light emitting and receiving device shown in FIG. 38G differs from the light emitting and receiving device shown in FIG. 38A in that it does not have an active layer 373 and a light emitting layer 383R, but has a layer 389 that serves as both a light emitting layer and an active layer.

[0584] As a layer that serves as both a light-emitting layer and an active layer, for example, a layer containing three materials, namely, an n-type semiconductor that can be used for the active layer 373, a p-type semiconductor that can be used for the active layer 373, and a light-emitting substance that can be used for the light-emitting layer 383R, can be used.

[0585] It is preferable that the lowest energy absorption band in the absorption spectrum of the mixed material of n-type and p-type semiconductors does not overlap with the maximum peak in the emission spectrum (PL spectrum) of the luminescent substance, and it is more preferable that they are sufficiently separated from each other.

[0586] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0587] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0588] (Embodiment 5) In this embodiment, a metal oxide (oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0589] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition to these, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. It may also contain one or more elements selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0590] The metal oxide can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method.

[0591] <Classification of crystal structures> Examples of the crystalline structure of oxide semiconductors include amorphous (including completely amorphous), CAAC, nc, cloud-aligned composite (CAC), single crystal, and polycrystal.

[0592] The crystalline structure of the film or substrate can be evaluated using X-ray diffraction (XRD) spectra. For example, it can be evaluated using XRD spectra obtained by GIXD (Grazing-Incidence XRD) measurements. The GIXD method is also called the thin film method or the Seemann-Bohlin method.

[0593] For example, in the case of a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in the case of an IGZO film having a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical peak shape of the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0594] The crystalline structure of a film or substrate can be evaluated by a diffraction pattern (also called a nanobeam electron diffraction pattern) observed using nanobeam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. Furthermore, a spot-like pattern is observed in the diffraction pattern of an IGZO film deposited at room temperature, rather than a halo. For this reason, it is estimated that an IGZO film deposited at room temperature is neither crystalline nor amorphous, but is in an intermediate state, and it cannot be concluded that it is in an amorphous state.

[0595] <<Structure of oxide semiconductor>> Note that oxide semiconductors may be classified differently from the above when focusing on their structures. For example, oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors also include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OSs), amorphous oxide semiconductors, and the like.

[0596] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0597] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, each with its c-axis aligned in a specific direction. The specific direction can be the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. Considering an atomic arrangement as a lattice arrangement, a crystalline region can also be a region with a uniform lattice arrangement. Furthermore, CAAC-OS has a region where multiple crystalline regions are connected in the ab-plane direction, and the region may have distortion. The distortion refers to a location where the lattice orientation changes between a region with a uniform lattice arrangement and a region with a different uniform lattice arrangement in the region where multiple crystalline regions are connected. In other words, CAAC-OS is an oxide semiconductor with a c-axis aligned but no clear orientation in the ab-plane direction.

[0598] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of the crystalline region may be several tens of nm.

[0599] In an In-M-Zn oxide (wherein element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), the CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as an (M, Zn) layer) are stacked. Note that indium and element M are mutually substituted. Therefore, the (M, Zn) layer may contain indium. Furthermore, the In layer may contain element M. Furthermore, the In layer may contain Zn. The layered structure is observed as a lattice image in, for example, a high-resolution transmission electron microscope (TEM) image.

[0600] When the CAAC-OS film is subjected to structural analysis using, for example, an XRD apparatus, a peak indicating c-axis orientation is detected at or near 2θ=31° in out-of-plane XRD measurement using θ / 2θ scan. Note that the position of the peak indicating c-axis orientation (2θ value) may vary depending on the type and composition of the metallic elements constituting the CAAC-OS.

[0601] For example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots are observed, and the spots are observed at positions that are point-symmetric with respect to the spot of the incident electron beam that has passed through the sample (also called the direct spot).

[0602] When the crystalline region is observed from the specific direction, the lattice arrangement in the crystalline region is basically a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. The distortion may also have a pentagonal, heptagonal, or other lattice arrangement. In the CAAC-OS, no clear grain boundaries can be identified even near the distortion. This indicates that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is thought to be because the CAAC-OS can tolerate distortion due to the lack of close-packed oxygen atom arrangement in the ab-plane direction and the change in interatomic bond distance caused by metal atom substitution.

[0603] A crystal structure with clear grain boundaries is called polycrystalline. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in the on-state current and field-effect mobility of a transistor. Therefore, CAAC-OS, which lacks clear grain boundaries, is one of the crystalline oxides with a crystal structure suitable for use in the semiconductor layer of a transistor. Zn is preferred for use in CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more effectively than In oxide.

[0604] CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to crystal grain boundaries. Furthermore, since the crystallinity of an oxide semiconductor can be reduced by the inclusion of impurities or the formation of defects, the CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, oxide semiconductors with CAAC-OS have stable physical properties. Therefore, oxide semiconductors with CAAC-OS are heat-resistant and highly reliable. Furthermore, the CAAC-OS is stable even under high temperatures (so-called thermal budgets) during the manufacturing process. Therefore, using a CAAC-OS for an OS transistor can increase the flexibility of the manufacturing process.

[0605] [nc-OS] The nc-OS has periodic atomic arrangement in a microscopic region (e.g., a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has microcrystals. Note that the size of the microcrystals is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore the microcrystals are also called nanocrystals. Furthermore, the nc-OS exhibits no regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis of an nc-OS film is performed using an XRD apparatus, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Furthermore, when an nc-OS film is subjected to electron diffraction (also known as selected-area electron diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (e.g., 50 nm or larger), a halo-like diffraction pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystals (for example, 1 nm to 30 nm), an electron diffraction pattern can be obtained in which multiple spots are observed within a ring-shaped region centered on the direct spot.

[0606] [a-like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a pore or low-density region. The OS has lower crystallinity than the nc-OS and CAAC-OS. The OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0607] <<Oxide semiconductor structure>> Next, the above-mentioned CAC-OS will be described in detail, which relates to the material composition.

[0608] [CAC-OS] CAC-OS is a material structure in which elements constituting a metal oxide are unevenly distributed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof. Note that, hereinafter, a metal oxide in which one or more metal elements are unevenly distributed and the regions containing the metal elements are mixed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof, is also referred to as a mosaic or patch state.

[0609] Furthermore, CAC-OS has a mosaic structure in which the material is separated into first and second regions, and the first regions are distributed throughout the film (hereinafter also referred to as a cloud structure). That is, CAC-OS is a composite metal oxide having a structure in which the first and second regions are mixed.

[0610] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0611] Specifically, the first region is a region whose main component is indium oxide, indium zinc oxide, or the like. The second region is a region whose main component is gallium oxide, gallium zinc oxide, or the like. In other words, the first region can be rephrased as a region whose main component is In. The second region can be rephrased as a region whose main component is Ga.

[0612] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0613] CAC-OS in In-Ga-Zn oxide refers to a material structure containing In, Ga, Zn, and O, with some regions primarily composed of Ga and other regions primarily composed of In randomly arranged mosaics. Therefore, it is presumed that CAC-OS has a structure in which metal elements are distributed nonuniformly.

[0614] The CAC-OS can be formed, for example, by a sputtering method without heating the substrate. When the CAC-OS is formed by a sputtering method, one or more of an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. The lower the flow rate of oxygen gas relative to the total flow rate of deposition gas during deposition, the more preferable it is. For example, the flow rate of oxygen gas relative to the total flow rate of deposition gas during deposition is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0615] For example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using EDX (Energy Dispersive X-ray spectroscopy) confirms that the CAC-OS has a structure in which a region mainly composed of In (first region) and a region mainly composed of Ga (second region) are unevenly distributed and mixed.

[0616] Here, the first region has higher conductivity than the second region. That is, the flow of carriers through the first region causes the metal oxide to exhibit conductivity. Therefore, the first region is distributed in a cloud-like manner in the metal oxide, thereby achieving a high field-effect mobility (μ).

[0617] On the other hand, the second region has higher insulating properties than the first region. That is, the second region is distributed in the metal oxide, thereby suppressing leakage current.

[0618] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act complementarily, thereby providing the CAC-OS with a switching function (the ability to turn on / off). In other words, CAC-OS has a conductive function in part of the material and an insulating function in part of the material, and the material as a whole functions as a semiconductor. By separating the conductive function from the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching behavior can be achieved.

[0619] Transistors using CAC-OS have high reliability and are therefore ideal for various semiconductor devices such as display devices.

[0620] Oxide semiconductors have a variety of structures, each with different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0621] <Transistors containing oxide semiconductors> Next, a case where the oxide semiconductor is used in a transistor will be described.

[0622] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0623] For the transistor, an oxide semiconductor with a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 Less than 1 × 10 15 cm -3 or less, more preferably 1 × 10 13 cm -3Less than 1×10, more preferably 11 cm -3 or less, more preferably 1 × 10 10 cm -3 Less than 1 x 10 -9 cm - 3 The above is the case. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, a semiconductor having a low impurity concentration and a low density of defect states is referred to as a highly purified intrinsic or substantially highly p...

Claims

1. a light-receiving device, a first light-emitting device, and an insulating layer; the light-receiving device has a first electrode, a light-receiving layer, and a common electrode stacked in this order; the first light-emitting device has a second electrode, a first EL layer, and the common electrode stacked in this order; the light-receiving layer includes a first functional layer, a second functional layer, and an active layer between the first functional layer and the second functional layer; the first functional layer includes a first substance having a hole transport property, the second functional layer includes a second substance having an electron transport property, an end of the active layer, an end of the first functional layer, and an end of the second functional layer coincide or approximately coincide with one another; the first EL layer has a third functional layer, a fourth functional layer, and a first light-emitting layer between the third functional layer and the fourth functional layer; the third functional layer includes a third substance having a hole transport property, the fourth functional layer includes a fourth substance having an electron transport property, A display device in which the insulating layer has an area in contact with a side surface of the first functional layer, a side surface of the light receiving layer, a side surface of the second functional layer, a side surface of the third functional layer, a side surface of the first EL layer, and a side surface of the fourth functional layer.

2. In claim 1, A display device in which an end of the first light-emitting layer, an end of the third functional layer, and an end of the fourth functional layer coincide or approximately coincide with one another.

3. In claim 1, A display device in which the thickness of the first light-emitting layer in a region in contact with the insulating layer is thinner than the thickness of the first light-emitting layer in a region not in contact with the insulating layer.

4. In claim 1, an end of the absorption layer is located inside an end of the first electrode, The insulating layer has an area in contact with a side surface of the light receiving layer and an upper surface and a side surface of the first electrode.

5. In claim 1, an end of the first EL layer is located inside an end of the second electrode; The insulating layer has an area in contact with a side surface of the first EL layer and an upper surface and a side surface of the second electrode.

6. a light-receiving device, a first light-emitting device, and an insulating layer; the light-receiving device has a first electrode, a light-receiving layer, and a common electrode stacked in this order; the first light-emitting device has a second electrode, a first EL layer, and the common electrode stacked in this order; the light-receiving layer includes a first functional layer, a second functional layer, and an active layer between the first functional layer and the second functional layer; the first functional layer includes a first substance having a hole transport property, the second functional layer includes a second substance having an electron transport property, an end of the active layer, an end of the first functional layer, and an end of the second functional layer coincide or approximately coincide with one another; the first EL layer has a third functional layer, a fourth functional layer, and a first light-emitting layer between the third functional layer and the fourth functional layer; the third functional layer includes a third substance having a hole transport property, the fourth functional layer includes a fourth substance having an electron transport property, the insulating layer has a region in contact with a side surface of the light-receiving layer and a side surface of the first EL layer, A display device in which an end of the first light-emitting layer is located inside an end of the third functional layer and an end of the fourth functional layer.

7. In claim 6, an end of the absorption layer is located inside an end of the first electrode, The insulating layer has an area in contact with a side surface of the light receiving layer and an upper surface and a side surface of the first electrode.

8. In claim 6, an end of the first EL layer is located inside an end of the second electrode; The insulating layer has an area in contact with a side surface of the first EL layer and an upper surface and a side surface of the second electrode.

9. In any one of claims 1 to 8, a second light-emitting device; the second light-emitting device has a third electrode, a second EL layer, and the common electrode stacked in this order; A display device, wherein the second EL layer has the third functional layer, the fourth functional layer, and a second light-emitting layer between the third functional layer and the fourth functional layer.

10. A semiconductor device comprising: a light-receiving device; a first light-emitting device; and an insulating layer; the light-receiving device has a first electrode, a light-receiving layer, and a common electrode stacked in this order; the first light-emitting device has a second electrode, a first EL layer, and the common electrode stacked in this order; the light-receiving layer includes a first functional layer, a second functional layer, and an active layer between the first functional layer and the second functional layer; the first functional layer includes a first substance having a hole transport property, the second functional layer includes a second substance having an electron transport property, the first EL layer has a third functional layer, a fourth functional layer, and a first light-emitting layer between the third functional layer and the fourth functional layer; the third functional layer includes a third substance having a hole transport property, the fourth functional layer includes a fourth substance having an electron transport property, A display device in which the insulating layer has an area in contact with a side surface of the first functional layer, a side surface of the light receiving layer, a side surface of the second functional layer, a side surface of the third functional layer, a side surface of the first EL layer, and a side surface of the fourth functional layer.

11. In claim 10, A display device in which the thickness of the first light-emitting layer in a region in contact with the insulating layer is thinner than the thickness of the first light-emitting layer in a region not in contact with the insulating layer.

12. In claim 10, an end of the absorption layer is located inside an end of the first electrode, The insulating layer has an area in contact with a side surface of the light receiving layer and an upper surface and a side surface of the first electrode.

13. In claim 10, an end of the first EL layer is located inside an end of the second electrode; The insulating layer has an area in contact with a side surface of the first EL layer and an upper surface and a side surface of the second electrode.

14. A semiconductor device comprising: a light-receiving device; a first light-emitting device; and an insulating layer; the light-receiving device has a first electrode, a light-receiving layer, and a common electrode stacked in this order; the first light-emitting device has a second electrode, a first EL layer, and the common electrode stacked in this order; the light-receiving layer includes a first functional layer, a second functional layer, and an active layer between the first functional layer and the second functional layer; the first functional layer includes a first substance having a hole transport property, the second functional layer includes a second substance having an electron transport property, the first EL layer has a third functional layer, a fourth functional layer, and a first light-emitting layer between the third functional layer and the fourth functional layer; the third functional layer includes a third substance having a hole transport property, the fourth functional layer includes a fourth substance having an electron transport property, the insulating layer has a region in contact with a side surface of the light-receiving layer and a side surface of the first EL layer, A display device in which an end of the first light-emitting layer is located inside an end of the third functional layer and an end of the fourth functional layer.

15. In claim 14, an end of the absorption layer is located inside an end of the first electrode, The insulating layer has an area in contact with a side surface of the light receiving layer and an upper surface and a side surface of the first electrode.

16. In claim 14, an end of the first EL layer is located inside an end of the second electrode; The insulating layer has an area in contact with a side surface of the first EL layer and an upper surface and a side surface of the second electrode.

17. In any one of claims 10 to 16, a second light-emitting device; the second light-emitting device has a third electrode, a second EL layer, and the common electrode stacked in this order; A display device, wherein the second EL layer has the third functional layer, the fourth functional layer, and a second light-emitting layer between the third functional layer and the fourth functional layer.

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