ion implanter

Abstract

The present invention provides an ion implanter. [Solution] The ion implanter includes an ion source, a linear multipole module, an ion beam shape adjustment module, and an analyzer magnet unit. The linear multipole module is installed between the ion source and a substrate. The ion beam shape adjustment module is installed between the ion source and the linear multipole module. The analyzer magnet unit is installed between the ion source and the linear multipole module, and the ion beam shape adjustment module is installed in front of the entrance of the analyzer magnet unit, and the linear multipole module is installed behind the exit of the analyzer magnet unit. The ion beam shape adjustment module can be used to adjust the ion beam to change the ion beam divergence angle as the ion beam enters the substrate.

Description

[Technical Field]

[0001] The present invention relates to ion implanters, and more particularly to ion implanters with adjustable ion beam height. [Background technology]

[0002] In the field of semiconductor manufacturing, precise control of ion beam parameters is crucial for ion implantation into a substrate. After the ion beam exits the arc-shaped slit of the ion source, if the ion beam height is insufficient, it will not be able to effectively cover the substrate area. Therefore, the ion beam height must be adjusted to ensure that the ion beam completely covers the substrate surface. Generally speaking, an ion implanter can generate a magnetic field to adjust the ion beam divergence, thereby changing the height or width of the ion beam coverage.

[0003] However, while existing equipment solves the problem of insufficient ion beam height coverage through the use of magnetic fields, it inevitably introduces another problem: an increased ion beam divergence angle. The ion beam divergence angle is related to the component of the ion beam's propagation direction perpendicular to the substrate and the component parallel to the substrate. When the ion beam has a relatively large divergence angle, implantation depth differences can occur in different regions of the substrate. Specifically, this phenomenon occurs in the ion beam at the center of the substrate, where the component of the propagation velocity perpendicular to the substrate is relatively large, resulting in a relatively deep implantation depth. In contrast, the ion beam at the edge of the substrate has a relatively small component of the propagation velocity perpendicular to the substrate, resulting in a relatively shallow implantation depth. This depth difference poses a challenge to ensuring uniformity in the substrate manufacturing process. Summary of the Invention [Problem to be solved by the invention]

[0004] In view of the above, it is an object of the present invention to provide an ion implanter for processing a substrate.

[0005] The ion implanter includes an ion source, a linear multipole module, an ion beam shape adjustment module, and an analyzer magnetic unit. The ion source is used to generate an ion beam. The linear multipole module is installed between the ion source and the substrate and is used to diverge the ion beam. The ion beam shape adjustment module is installed between the ion source and the linear multipole module. The analyzer magnet unit is installed between the ion source and the linear multipole module, with the ion beam shape adjustment module installed in front of the entrance of the analyzer magnet unit and the linear multipole module installed behind the exit of the analyzer magnet unit. The ion beam shape adjustment module can be used to adjust the ion beam to change the ion beam divergence angle when the ion beam enters the substrate. [Brief explanation of the drawings]

[0006] [Figure 1] 1 shows an ion implanter according to a first embodiment; [Figure 2] 1A-1C illustrate operation of an ion beam profiler according to some embodiments. [Figure 3A] FIG. 1 illustrates ion beam height coverage area according to some embodiments. [Figure 3B] 1A-1C illustrate divergence angles in different axes of an ion beam according to some embodiments. [Figure 4] FIG. 1 is a top view of an angle-measuring Faraday cup of an ion beam profiler according to some embodiments. [Figure 5A] FIG. 10 illustrates the central angle of an ion beam according to some embodiments. [Figure 5B] FIG. 1 illustrates the divergence angle of an ion beam according to some embodiments. [Figure 6] FIG. 2 shows an ion implanter according to a second embodiment. [Figure 7] FIG. 1 illustrates an ion beam shape adjustment module according to some embodiments. [Figure 8] FIG. 10 illustrates multiple magnetic field measurement points between ion beam shape adjustment modules according to some embodiments. [Figure 9] FIG. 10 is a three-dimensional view of a vacuum cavity according to a third embodiment. [Figure 10] FIG. 10 is a front view of a vacuum cavity according to a third embodiment. [Figure 11] FIG. 10 is a three-dimensional view of an ion beam shape adjusting module according to a third embodiment. [Figure 12] FIG. 10 is a front view of an ion beam shape adjustment module according to a third embodiment. [Figure 13] FIG. 10 is a top view of an ion beam shape adjustment module according to a third embodiment. [Figure 14] FIG. 10 is a three-dimensional view of an actuator of an ion beam shape adjusting module according to a third embodiment. [Figure 15] FIG. 10 is a three-dimensional view of a vacuum cavity according to a fourth embodiment. [Figure 16] FIG. 10 is a front view of a vacuum cavity according to a fourth embodiment. [Figure 17] FIG. 10 is a front view of a driver of an ion beam shape adjustment module according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] In the present specification, when the terms "comprise," "include," or "have" are used, unless otherwise specified, they may further include other elements, assemblies, structures, regions, components, devices, systems, steps, connections, etc., and should not exclude other features. When the terms "top," "top," "bottom," "bottom," "left," "right," "inside," "outside," "near," and "far" are used, they are used only to describe the technical content or relative relationship of the embodiments of the present invention, and are not used to limit the scope of application of the present invention unless otherwise specified. Therefore, any adjustment, replacement, or change of relative positions and relationships should be included within the scope of the claims of the present invention as long as it does not substantially change the technical content of the present invention. When the terms "first," "second," etc. are used, they are used only to describe or distinguish features, such as elements, assemblies, structures, regions, components, devices, systems, etc., and do not limit the scope of application of the present invention or the spatial order relationship between these features. Additionally, unless otherwise stated, the singular term "one" herein also applies to plural usage scenarios, and the terms "or," "and / or," etc., can be used interchangeably.

[0008] FIG. 1 is a diagram illustrating an ion implanter according to a first embodiment. Please refer to FIG. 1. In this embodiment, the ion implanter 10′ includes an ion source 11, an analyzer magnet unit 13, and a linear multipole module 14. The ion implanter 10′ is used to process a substrate 91, for example, in a wafer ion implantation manufacturing process. The linear multipole module 14 is installed between the ion source 11 and the substrate 91, and the analyzer magnet unit 13 is installed between the ion source 11 and the linear multipole module 14.

[0009] The ion source 11 is used to generate a charged ion beam I, which contains ions of an element targeted for implantation into the substrate 91. The ion beam I generated by the ion source 11 passes through an arc-shaped slit 111 and is projected toward the substrate 91. The analyzer magnet unit 13 (AMU) uses a magnetic field to separate elements of different valences and masses (e.g., isotopes) in the charged ion beam I, thereby analyzing the target implantation ions. To effectively separate the ion beam I, the analyzer magnet unit 13 must provide a relatively long travel distance for the ion beam I. The linear multipole module 14 (LMP) may include an electromagnet array consisting of multiple coils, which generates a magnetic field to change the direction of travel of the charged ion beam I, achieving an effect similar to focusing or diverging with a lens. This allows the ion implanter 10' to adjust the height of the ion beam I. Specifically, in some embodiments, the charged ion beam I generated by the ion source 11 is a ribbon ion beam having an ion beam width and an ion beam height. In these embodiments, the ion beam width refers to the distribution width of the ribbon ion beam along the X coordinate axis, and the ion beam height refers to the distribution width of the ribbon ion beam along the Y coordinate axis, where the distribution width of the ribbon ion beam along the Y coordinate axis is greater than the distribution width along the X coordinate axis. The ion implanter 10' can increase the ion beam height by diverging the ribbon ion beam along the Y coordinate axis. It should be understood that in other embodiments, the ion beam height may refer to the distribution width of the ribbon ion beam along another axis (e.g., the X coordinate axis).

[0010] 1, the arc-shaped slit 111 has a curvature R and a slit height H, which causes the emitted ion beam I to have an initial divergence angle. The height of the ion beam I when it reaches the entrance 131 of the analyzer magnet unit 13 is positively correlated with the curvature R and slit height H of the arc-shaped slit 111, and is also positively correlated with the distance D1 between the arc-shaped slit 111 and the entrance 131 of the analyzer magnet unit 13. In other words, the larger the slit height H of the arc-shaped slit 111, the larger the curvature R, or the longer the distance D1, the higher the height of the ion beam I when it reaches the entrance 131 of the analyzer magnet unit 13.

[0011] In addition, since the ion beam I has a relatively long travel distance D2 inside the analyzer magnet unit 13, in this embodiment the height of the ion beam I when it enters the entrance 131 of the analyzer magnet unit 13 is 110 mm, the distance the ion beam I passes through inside the analyzer magnet unit 13 is D2, the distance it passes from leaving the exit 132 of the analyzer magnet unit 13 to the linear multipole module 14 is D3, and the height of the ion beam increases to 240 mm after reaching the linear multipole module 14.

[0012] The linear multipole module 14 then diverges the ion beam I using a magnetic field, causing the ion beam height of the ion beam I in this embodiment to increase from 240 mm before entering the linear multipole module 14 to 320 mm when it reaches the substrate 91. The ion beam height when the ion beam I leaves the linear multipole module 14 is related to the ion beam divergence angle θy and the traveling distance D4, i.e., is the ion beam height when the ion beam I enters the linear multipole module 14 (i.e., 240 mm in this embodiment) plus twice the product of the tangent of the ion beam divergence angle θy and the traveling distance D4, which corresponds to the ion beam height when the ion beam I reaches the substrate 91 (i.e., 320 mm in this embodiment). As the ion beam height of the ion beam I increases, the area covered by the ion beam I on the substrate 91 increases. However, due to limitations in the space, processing range, and vacuum maintenance costs of a semiconductor manufacturing factory, the space within the ion implanter 10′ cannot be expanded sufficiently to increase the travel distance of the ion beam I from leaving the linear multipole module 14 to the substrate 91. Therefore, how to effectively utilize the limited space within the ion implanter 10′ and how to effectively adjust the divergence angle θy of the ion beam are keys to adjusting the height of the ion beam I and increasing the coverage area of ​​the ion beam I.

[0013] FIG. 2 illustrates the operation of an ion beam profiler according to some embodiments. Please refer to FIGS. 1 and 2 together. In some embodiments, an ion beam profiler 92 is installed in front of a substrate 91 and can scan the ion beam I by moving along the coordinate axis Y. In this embodiment, the ion beam profiler 92 includes three types of Faraday cups: a one-dimensional ion beam profile Faraday cup 921, a two-dimensional ion beam profile Faraday cup 922, and an angle measurement Faraday cup 923. The ion beam profiler 92 may include multiple angle measurement Faraday cups 923, for example, three angle measurement Faraday cups 923 in this embodiment.

[0014] The one-dimensional ion beam profile Faraday cup 921 of the ion beam profiler 92 can be used to measure the area covered by the ion beam I. To facilitate understanding of the technical details that follow, the following will first describe how to measure the height coverage area and divergence angle of the ion beam I.

[0015] FIG. 3A illustrates the height coverage area of ​​an ion beam according to some embodiments. Please refer to FIGS. 1 and 3A together. The horizontal axis of FIG. 3A represents the vertical coordinate position of the path through which the major axis of the surface-scanning ion beam flow of the ion beam profiler 92 passes. The vertical axis represents the uniformity of the ion beam I, i.e., the ratio of the average current value measured by the ion beam profiler 92 in response to the ion beam I within a specific local sampling range to the average current value measured by the ion beam profiler 92 in response to the ion beam I within the entire sampling range. The uniformity of the ion beam I received by the substrate 91 can be estimated based on the magnitude of this ratio. The origin position in FIG. 3A corresponds to the center of the substrate 91. In this embodiment, the ion beam profiler 92 scans and samples the ion beam I along the coordinate axis Y (e.g., sampling at 200 scanning positions over a 380 mm travel distance). The uniformity of the ion beam I corresponding to each position on the substrate 91 is expected to be generally close to or equal to 1. In the case of a 12-inch wafer manufacturing process, the ion beam height must cover the substrate diameter A, i.e., be at least 305 mm. Taking the 12-inch substrate diameter A as an example, FIG. 3A shows that the ion beam uniformity clearly decreases after the vertical coordinate position exceeds ±140 mm. When adjusting the ion beam height, the influence of the ion beam divergence angle θy must be taken into consideration. Specifically, although the uniformity of the ion beam I at the center and edge of the substrate 91 is close to or equal to 1, the ion beam I irradiated at the center of the substrate 91 has a relatively large component perpendicular to the substrate 91, resulting in a relatively deep implantation depth. Meanwhile, the ion beam I irradiated at the edge of the substrate 91 has a relatively small component perpendicular to the substrate 91, resulting in a relatively shallow implantation depth. This phenomenon becomes more pronounced when the ion beam divergence angle θy is too large.

[0016] FIG. 3B is a diagram illustrating the divergence angle of an ion beam in different axes according to some embodiments. Please refer to FIGS. 1 and 3B together. The horizontal axis of FIG. 3B represents the divergence angle of the ion beam I along the coordinate axis X, and the vertical axis represents the divergence angle of the ion beam I along the coordinate axis Y. In this embodiment, the ion beam I is a ribbon ion beam, which has a relatively large divergence angle along the coordinate axis Y. The angle-measuring Faraday cup 923 of the ion beam profiler 92 can be used to measure the divergence angle of the ion beam I.

[0017] FIG. 4 is a top view of an angle-measuring Faraday cup of an ion beam profiler according to some embodiments. FIG. 5A is a diagram illustrating the central angle of an ion beam according to some embodiments. Please refer to FIGS. 4 and 5A together. In this embodiment, the ion beam profiler 92 includes three angle-measuring Faraday cups 923 for measuring the divergence angle of an ion beam. Each angle-measuring Faraday cup 923 has a cavity inside, and the ion beam I enters the cavity through a slit at the top of the ion beam angle-measuring Faraday cup 923. The cavity has a height h, and the slit has a width d. At the bottom of the angle-measuring Faraday cup 923, a left sensor 923b, a center sensor 923a, and a right sensor 923c are located in this order in the X-axis direction. Similarly, an upper sensor 923d, a center sensor 923a, and a lower sensor 923e are located in this order in the Y-axis direction. The central sensor 923a generates a central sensor current value Ic in response to irradiation with the ion beam I, the left sensor 923b generates a left sensor current value Ix+ in response to irradiation with the ion beam I, the right sensor 923c generates a right sensor current value Ix- in response to irradiation with the ion beam I, the upper sensor 923d generates an upper sensor current value Iy+ in response to irradiation with the ion beam I, and the lower sensor 923e generates a lower sensor current value Iy- in response to irradiation with the ion beam I. As shown in FIG. 5A, the lower sensor 923e is not irradiated with the ion beam I (Iy- is 0), and the ion beam I passes through the slit at the top, enters the cavity of the ion beam angle measuring Faraday cup 923, is deflected, and irradiates the upper sensor 923d. The central angle θc1 of the ion beam in the coordinate axis Y direction can be expressed by the following formula 1.

[0018]

number

[0019] 5B is a diagram illustrating the divergence angle of an ion beam according to some embodiments. Referring to FIG. 5B, the divergence angle θy of the ion beam can be expressed as follows:

[0020] θc1-θc2 (Formula 2) The central angle θc1 of the ion beam represents the average angle of the ion beam I's propagation direction measured within a local area. For example, it is the average of the measurements of the three angle-measuring Faraday cups 923 in Figure 2. The central angle θc2 of the ion beam is the average of the central angles of the ion beam measured at each of 200 scanning positions by the ion beam profiler 92. Therefore, the ion beam divergence angle θy is calculated by subtracting the total central angle θc2 of the ion beam from the central angle θc1 of the ion beam within the local area. By measuring the ion beam divergence angle θy, it is possible to determine whether the difference between the ion beam divergence angle θy at the center of the substrate 91 and the ion beam divergence angle θy at the edge of the substrate 91 is too large, resulting in non-uniform implantation depth. 1 as an example, due to the limitation of the travel distance of the ion beam I between the linear multipole module 14 and the substrate 91, the linear multipole module 14 needs to adjust the ion beam I so that the ion beam I covers the range of the substrate 91 by performing ion implantation using a relatively large ion beam divergence angle θy. However, it has been discovered that this method often results in uneven implantation depths between the center and the edge of the substrate 91 in the manufacturing process of a large wafer, which may prevent the edge portion of the substrate 91 from being continuously used in the subsequent manufacturing process.

[0021] FIG. 6 is a diagram illustrating an ion implanter according to a second embodiment. Referring to FIG. 6, in this embodiment, the ion implanter 10′ includes an ion source 11, an ion beam shape adjusting module 12, an analyzer magnet unit 13, and a linear multipole module 14. The linear multipole module 14 is disposed between the ion source 11 and a substrate 91, the analyzer magnet unit 13 is disposed between the ion source 11 and the linear multipole module 14, and the ion beam shape adjusting module 12 is disposed between the ion source 11 and the analyzer magnet unit 13.

[0022] 6, the ion beam I emitted from the arc-shaped slit 111 has an initial divergence angle, and the ion beam shape adjustment module 12 expands the divergence angle θy of the on-beam before the on-beam enters the analyzer magnet unit 13. Since the analyzer magnet unit 13 has a relatively long traveling distance, the height of the ion beam in this embodiment increases from 145 mm when it enters the entrance 131 of the analyzer magnet unit 13 to 300 mm when it leaves the entrance 131 of the analyzer magnet unit 13. The linear multipole module 14 diverges the ion beam I using a magnetic field, thereby increasing the height of the ion beam from 300 mm before entering the linear multipole module 14 to 320 mm when it reaches the substrate 91. 1 and 6 together, the ion beam shape adjusting module 12 only increases the height of the ion beam from 110 mm at the entrance 131 of the analyzer magnet unit 13 in FIG. 1 to 145 mm in FIG. 6, but due to the synergistic effect of the relatively long traveling distance of the analyzer magnet unit 13, the height of the ion beam increases from 240 mm at the exit 132 of the analyzer magnet unit 13 in FIG. 1 to 300 mm in FIG. 6, so that the linear multipole module 14 can adjust the height of the ion beam to cover the range of the substrate diameter A simply by fine-tuning the divergence angle θy of the ion beam. It should be understood that the ion beam heights shown in FIGS. 1 and 6 are only for the purpose of comparing different embodiments and do not limit the height of the ion beam generated by the ion beam shape adjusting module 12.

[0023] FIG. 7 illustrates an ion beam shape adjusting module according to some embodiments. Please refer to FIGS. 6 and 7 together. In FIG. 6, coordinate axis Z (horizontal direction on the paper) represents the direction of travel of the center of the ion beam I, coordinate axis X (incoming / outgoing direction on the paper) represents the horizontal direction of the ion implanter 10′, and coordinate axis Y (vertical direction on the paper) represents the vertical direction of the ion implanter 10′. Therefore, FIG. 7 corresponds to a state in which an observer stands at the position of the arc-shaped slit 111 and observes the ion beam I being irradiated onto the substrate 91. That is, the ion beam I shown in FIG. 7 is incident on the paper. The ion beam shape adjusting module 12 includes an upper magnet pair 121 and a lower magnet pair 122. The upper magnet pair 121 includes a first upper magnet 1211 and a second upper magnet 1212, and the lower magnet pair 122 includes a first lower magnet 1221 and a second lower magnet 1222. Each of the first upper magnet 1211, the second upper magnet 1212, the first lower magnet 1221, and the second lower magnet 1222 may be a single magnet or a magnet unit consisting of multiple magnets, and each magnet unit includes two magnets as shown in Figure 7. In some embodiments, the first upper magnet 1211, the second upper magnet 1212, the first lower magnet 1221, and the second lower magnet 1222 are permanent magnets, and the magnitude (strength) of the magnetic field between the magnet pairs can be adjusted by adjusting the number of magnets in the magnet unit or the spacing D between the magnet pairs.

[0024] 7, a first magnetic field B1 is formed between the upper magnet pair 121, and a second magnetic field B2 is formed between the lower magnet pair 122. The traveling direction of the ion beam I (coordinate axis Z; inward / outward direction on the paper) is perpendicular to the first magnetic field B1 or the second magnetic field B2 (coordinate axis X; left-right direction on the paper). The upper part of the ion beam I passes through (the gap between) the upper magnet pair 121 and is mainly influenced by the first magnetic field B1, while the lower part of the ion beam I passes through (the gap between) the lower magnet pair 122 and is mainly influenced by the second magnetic field B2. To diverge the ion beam I, the ion beam shape adjusting module 12 can generate an upward magnetic force component of the ion beam I by the first magnetic field B1 and a downward magnetic force component of the ion beam I by the second magnetic field B2. In this embodiment, the ion beam I is a positive ion beam having positively charged ions, the first magnetic field B1 faces from right to left in the direction of travel of the positive ion beam (direction into and out of the page), i.e., the north magnetic pole of the second upper magnet 1212 faces the south magnetic pole of the first upper magnet 1211, and the second magnetic field B2 faces from left to right in the direction of travel of the positive ion beam, i.e., the north magnetic pole of the first lower magnet 1221 faces the south magnetic pole of the second lower magnet 1222. According to the Lorentz force law, the upper part of the ion beam I is subjected to a magnetic force in the positive direction of the coordinate axis Y, and the lower part of the ion beam I is subjected to a magnetic force in the negative direction of the coordinate axis Y, so that the ion beam I diverges along the Y-axis direction.

[0025] The degree of divergence of the ion beam I is affected by the first magnetic field B1 and the second magnetic field B2. More precisely, the degree of divergence is related to the magnetic flux within a specific spatial curved region through which the ion beam I passes. FIG. 8 illustrates multiple magnetic field measurement points between the ion beam shape adjustment module according to some embodiments. Table 1 is a record table (provided at the end of this specification) of Gaussian values ​​for each magnetic field measurement point in the embodiment shown in FIG. 8. Please refer to FIG. 8 and Table 1 together. In this embodiment, the ion beam shape adjustment module 12 includes a left arm 123 and a right arm 124. A first upper magnet 1211 is fixed to the upper end of the left arm 123, a second lower magnet 1222 is fixed to the lower end of the left arm 123, a second upper magnet 1212 is fixed to the upper end of the right arm 124, and a first lower magnet 1221 is fixed to the lower end of the right arm 124. The magnetic flux at each spatial point between the magnet pairs can be affected by adjusting the distance D between the left arm 123 and the right arm 124. For example, when the magnet pair spacing D is 202 mm, the Gaussian value at measurement point L1, which is relatively close to the first upper magnet 1211, is 320, and the Gaussian value at measurement point C1, which is relatively far from the first upper magnet 1211, is 118. When the magnet pair spacing D is reduced to 162 mm, the Gaussian value at measurement point L1, which is relatively close to the first upper magnet 1211, is 937, an increase of 293%, and the Gaussian value at measurement point C1, which is relatively far from the first upper magnet 1211, is 259, an increase of 219%. Thus, the degree of divergence of the ion beam I increases as the magnet pair spacing D decreases. However, referring again to FIG. 6 , the ion beam I diverges after passing through the ion beam shape adjusting module 12, and the divergence angle θy of the ion beam at the substrate 91 decreases, resulting in a more uniform ion implantation depth in the substrate 91.

[0026] Table 2 shows the effect of changing the magnet spacing D on the divergence angle of the ion beam I in the Y-axis in different manufacturing process embodiments. In this embodiment, Table 2 shows three manufacturing processes in which boron is used and ion implantation is performed at different implantation energies of 5 keV, 8 keV, and 20 keV. The divergence angle θy of the ion beam in the Y-axis represents the divergence angle θy of the ion beam in the axial direction of the coordinate axis Y of the ion beam I calculated at the substrate 91 using the above formula. As can be seen from Table 2, when the magnet spacing D in the B5K manufacturing process is reduced from 202 mm to 162 mm, the ion beam divergence angle θy in the Y-axis decreases from 0.89 degrees to 0.42 degrees; when the magnet spacing D in the B8K manufacturing process is reduced from 202 mm to 162 mm, the ion beam divergence angle θy in the Y-axis decreases from 0.33 degrees to 0.20 degrees; and when the magnet spacing D in the B20K manufacturing process is reduced from 202 mm to 162 mm, the ion beam divergence angle θy in the Y-axis decreases from 0.18 degrees to 0.00 degrees. As shown in the above example, when the ion beam shape adjustment module 12 increases the ion beam divergence angle θy by reducing the magnet pair spacing D, the ion beam divergence angle θy that needs to be adjusted by the position of the linear multipole module 14 decreases, and as a result, the ion beam divergence angle θy measured near the substrate 91 (the position of the ion beam profiler 92) decreases.

[0027] FIG. 9 is a three-dimensional view of a vacuum cavity according to the third embodiment. FIG. 10 is a front view of a vacuum cavity according to the third embodiment. FIG. 11 is a three-dimensional view of an ion beam shape adjustment module according to the third embodiment. FIG. 12 is a front view of an ion beam shape adjustment module according to the third embodiment. Please refer to FIGS. 9 to 12 together. In this embodiment, the ion beam shape adjustment module 12 is installed at the entrance 131 of the analyzer magnet unit 13 and includes a vacuum cavity 127, an upper magnet pair 121, a lower magnet pair 122, a left arm 123, a right arm 124, and an actuator 125. The left arm 123 and the right arm 124 are used to fix the upper magnet pair 121 and the lower magnet pair 122 and are installed inside the vacuum cavity 127. The actuator 125 is coupled to the left arm 123 and the right arm 124 and is used to adjust the distance D between the left arm 123 and the right arm 124. 10 , the left arm 123 and the right arm 124 are installed on both the left and right sides of the path of the ion beam I, and an opening is formed in a cavity wall 1271 at the top of the vacuum cavity 127, through which the upper ends of the left arm 123 and the right arm 124 are coupled to the driver 125. To maintain the airtightness (hermeticity) of the vacuum cavity 127, the opening in the cavity wall 1271 is covered with a sealing cover 128. In this way, the slide rail mechanism of the driver 125 is enclosed in the sealing cover 128, and the motor assembly 54 is fixed to the sealing cover 128.

[0028] FIG. 13 is a top view of an ion beam shape adjusting module according to a third embodiment. FIG. 14 is a three-dimensional view of an actuator of the ion beam shape adjusting module according to the third embodiment. Please refer to FIGS. 13 and 14 together. In this embodiment, the actuator 125 of the ion beam shape adjusting module 12 includes a first slide rail 51, a second slide rail 52, a gear 53, and a motor assembly 54. The first slide rail 51 includes a first slider 511 and a first guide rail 512, and the first slider 511 has a rack 5111. The second slide rail 52 includes a second slider 521 and a second guide rail 522, and the second slider 521 has a rack 5211. In this embodiment, the first guide rail 512 and the second guide rail 522 are arranged parallel to each other, and their extension direction is substantially parallel to the direction of the first magnetic field B1. In other words, the first guide rail 512 and the second guide rail 522 are configured to move the left arm 123 and the right arm 124 closer to or farther from each other. The gear 53 simultaneously meshes with the rack 5111 of the first slider 511 and the rack 5211 of the second slider 521. As shown in Fig. 13, when the gear 53 rotates clockwise, the rack 5111 of the first slider 511 is driven to move to the right, whereby the first slider 511 and the left arm 123 coupled to the first slider 511 move to the right, and the rack 5211 of the second slider 521 is driven to move to the left, whereby the second slider 521 and the right arm 124 coupled to the second slider 521 move to the left. Therefore, the left arm 123 and the right arm 124 approach each other, and the magnetic force acting on the ion beam I increases. Conversely, when the gear 53 rotates counterclockwise, the rack 5111 of the first slider 511 is driven to move to the left, whereby the first slider 511 and the left arm 123 coupled to the first slider 511 move to the left, and the rack 5211 of the second slider 521 is driven to move to the right, whereby the second slider 521 and the right arm 124 coupled to the second slider 521 move to the right. Therefore, the left arm 123 and the right arm 124 move away from each other, and the magnetic force acting on the ion beam I decreases.

[0029] As shown in FIG. 13 , in this embodiment, the rotation of the gear 53 is driven by a motor assembly 54. The motor assembly 54 is fixed outside the vacuum cavity 127, and the rotating shaft of the motor assembly 54 passes through the sealing cover 128 and is fixedly connected to the gear 53. In this embodiment, the motor assembly 54 includes a variable resistor 541, a worm gear assembly 542, a magnetic fluid bearing 543, and a drive motor 544. The drive motor 544 is used to generate torque, and the worm gear assembly 542 is driven by the drive motor 544 to change the direction of the torque to correspond to the axial direction of the gear 53. The magnetic fluid bearing 543 is used to seal the opening on the sealing cover 128, which is advantageous for the rotating shaft of the motor assembly 54 extending from outside the vacuum cavity 127 to inside the vacuum cavity 127. The magnetic fluid bearing 543 can also provide smooth rotation of the rotating shaft. The variable resistor 541 is used to measure the rotation angle of the rotary shaft, and from this, the moving distance of the left arm 123 and the right arm 124 and the distance D between them can be estimated.

[0030] FIG. 15 is a three-dimensional view of a vacuum cavity according to the fourth embodiment. FIG. 16 is a front view of a vacuum cavity according to the fourth embodiment. Please refer to FIGS. 15 and 16 together. In this embodiment, the ion beam shape adjustment module 12 is installed at the entrance 131 of the analyzer magnet unit 13 and includes a vacuum cavity 127, an upper magnet pair 121, a lower magnet pair 122, a left arm 123, a right arm 124, and a driver 126. The left arm 123 and the right arm 124 are used to fix the upper magnet pair 121 and the lower magnet pair 122 and are installed inside the vacuum cavity 127. The driver 126 is coupled to the left arm 123 and the right arm 124 and is used to adjust the distance D between the left arm 123 and the right arm 124. A portion of the driver 126 assembly is installed outside the vacuum cavity 127. 16 , the left arm 123 and the right arm 124 are installed on both the left and right sides of the path of the ion beam I, and an opening is formed in the upper cavity wall 1271 of the vacuum cavity 127, through which the upper ends of the left arm 123 and the right arm 124 are coupled to the actuator 126. To maintain the hermeticity of the vacuum cavity 127, the opening in the cavity wall 1271 is covered with a sealing cover 128. The difference between this embodiment and the third embodiment is at least that the guide rail structure in this embodiment is installed outside the vacuum cavity 127, which is advantageous for equipment maintenance and can prevent the ion beam I from interfering with the mechanism, causing structural damage or free-floating particles in the vacuum cavity 127.

[0031] 17 is a front view of the actuator of the ion beam shaping module according to the fourth embodiment. Please refer to FIG. 17. In this embodiment, the actuator 126 of the ion beam shaping module 12 includes a first slide 61, a second slide 62, a screw 63, and a motor assembly 64. The first slide 61 includes a first pulley 611 and a first connecting rod 612. The first pulley 611 is coupled to the first connecting rod 612 and has a threaded hole 6111. The first connecting rod 612 passes through the vacuum cavity 127 and is fixed to the left arm 123. The second slide 62 includes a second pulley 621 and a second connecting rod 622. The second pulley 621 is coupled to the second connecting rod 622 and has a threaded hole 6211. The second connecting rod 622 passes through the vacuum cavity 127 and is fixed to the right arm 124. In this embodiment, the first connecting rod 612 and the second connecting rod 622 are arranged in parallel, and their extension direction is substantially parallel to the direction of the first magnetic field B1. In other words, the first connecting rod 612 and the second connecting rod 622 are configured to move the left arm 123 and the right arm 124 closer or farther apart from each other. The screw 63 extends parallel to the directions of the first connecting rod 612 and the second connecting rod 622, and passes through the screw hole 6111 of the first pulley 611 and the screw hole 6211 of the second pulley 621 simultaneously. As shown in FIG. 17, in this embodiment, the left thread 631 of the screw 63 (where the screw 63 passes through the threaded hole 6111 of the first pulley 611) has a first thread direction, and the right thread 632 of the screw 63 (where the screw 63 passes through the threaded hole 6211 of the second pulley 621) has a second thread direction, and the thread directions of the left thread 631 and the right thread 632 are opposite to each other. In this manner, when the screw 63 is driven by the motor assembly 64 to rotate counterclockwise, the screw hole 6111 of the first pulley 611 is driven, causing the first pulley 611 to move along the first guide rail 614 to the left in FIG. 17, the left arm 123 coupled to the first pulley 611 by the first connecting rod 612 to move to the left in FIG. 17, and the screw hole 6211 of the second pulley 621 is driven, causing the second pulley 621 to move along the second guide rail 624 to the right in FIG. 17, and the right arm 124 coupled to the second pulley 621 by the second connecting rod 622 to move to the right in FIG. 17. Therefore, the left arm 123 and the right arm 124 approach each other, and the magnetic force acting on the ion beam I increases.

[0032] In some embodiments, the actuator 126 includes a first bellows 613 and a second bellows 623, where the first bellows 613 covers the first connecting rod 612 and is fixedly connected to the first pulley 611 and the cavity wall 1271 of the vacuum cavity 127, and the second bellows 623 covers the second connecting rod 622 and is fixedly connected to the second pulley 621 and the cavity wall 1271 of the vacuum cavity 127. The bellows are used to seal the opening on the sealing cover 128, thereby advantageously allowing the first connecting rod 612 or the second connecting rod 622 to extend from the outside of the vacuum cavity 127 to the inside of the vacuum cavity 127. The bellows may also be compressible, providing mobility to the first connecting rod 612 or the second connecting rod 622.

[0033] Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and any modifications to the present invention that do not depart from the spirit of the present invention fall within the technical scope of the present invention.

[0034] Table 1 is a record table of Gauss values ​​at each magnetic field measurement point in the embodiment shown in FIG.

[0035] [Table 1] Table 2 shows the change in the divergence angle of the ion beam on the Y axis with the change in the magnet spacing in different manufacturing processes.

[0036] [Table 2] [Explanation of symbols]

[0037] 10': Ion implanter 11: Ion source 111: Arc-shaped slit 12: Ion beam shape adjustment module 121: Upper magnet pair 1211: First upper magnet 1212:Second upper magnet 122: Lower magnet pair 1221: First lower magnet 1222: Second lower magnet 123: Left arm 124: Right arm 125: Driver 51: First slide rail 511: First Slider 5111: Rack 512: First guide rail 52: Second slide rail 521: Second slider 5211: Rack 522: Second guide rail 53: Gear 54: Motor assembly 541: Variable resistor 542: Worm gear assembly 543: Magnetic fluid bearing 544: Drive motor 126: Driver 61:First slide 611:First pulley 6111: screw hole 612: First series rod 613: First ripple tube 614: First guide rail 62:Second slide 621:Second pulley 6211: screw hole 622:Second continuous rod 623:Second ripple tube 624: Second guide rail 63: Screw 631: Left-hand thread 632: Right-hand thread 64: Motor assembly 127: Vacuum cavity 1271: Cavity wall 128: Ceiling cover 13: Analyzer magnet unit 131:Entrance 132:Exit 14: Linear multipole module 91: Circuit board 92: Ion beam profiler 921: 1D ion beam profile Faraday cup 922: 2D ion beam profile Faraday cup 923:Angle measuring Faraday cup 923a: Central sensor 923b: Left sensor 923c: Right sensor 923d: Upper sensor 923e: Lower sensor θc1: central angle of the ion beam θc2: Total central angle of the ion beam θy: divergence angle of the ion beam I: Ion beam B1: First magnetic field B2:Second magnetic field L1, C1, R1, L2, C2, R2: Measurement point A: Diameter of the board D: Spacing d: slit width H: Slit height h: height of cavity D1, D2, D3, D4: distance N: Magnetic pole R: curvature S: Magnetic pole X, Y, Z: coordinate axes

Claims

1. 1. An ion implanter for processing a substrate, comprising: an ion source for producing a ribbon ion beam, the ribbon ion beam having a major axis; a linear multipole module disposed between the ion source and the substrate for diverging the ribbon ion beam in the direction of the longitudinal axis; an ion beam shape adjustment module disposed between the ion source and the linear multipole module; and an analyzer magnet unit disposed between the ion source and the linear multipole module; the ion beam shape adjusting module is installed in front of the entrance of the analyzer magnet unit; The linear multipole module is installed behind the outlet of the analyzer magnet unit; The ion implanter, wherein the ion beam shape adjustment module can be used to adjust the ribbon ion beam to change an ion beam divergence angle at which the major axis of the ribbon ion beam enters the substrate.

2. 10. The ion implanter of claim 1, the ion beam shape adjusting module is used to generate a first magnetic field and a second magnetic field, the ribbon ion beam can pass through the first magnetic field and the second magnetic field simultaneously, and the directions of the first magnetic field and the second magnetic field are opposite to each other.

3. 3. The ion implanter of claim 2, the ion beam shape adjustment module includes an upper magnet pair and a lower magnet pair; the upper magnet pair is used to generate the first magnetic field, the upper magnet pair includes a first upper magnet and a second upper magnet, there is a first gap between the first upper magnet and the second upper magnet, an upper portion of the ribbon ion beam passes through the first gap, and a traveling direction of the ribbon ion beam is perpendicular to the first magnetic field; the lower magnet pair includes a first lower magnet and a second lower magnet, the second magnetic field is formed between the lower magnet pair, a second gap is formed between the first lower magnet and the second lower magnet, a lower portion of the ribbon ion beam passes through the second gap, and a traveling direction of the ribbon ion beam is perpendicular to the second magnetic field.

4. 4. The ion implanter of claim 3, The ion implanter, wherein the first magnetic field generates an upward magnetic force component of the ribbon ion beam, and the second magnetic field generates a downward magnetic force component of the ribbon ion beam.

5. 4. The ion implanter of claim 3, The ion implanter, wherein the first upper magnet, the second upper magnet, the first lower magnet, and the second lower magnet are permanent magnets.

6. 4. The ion implanter of claim 3, The ion implanter, wherein the distance between the first gap and the second gap is a spacing, and the spacing is directly proportional to the ion beam divergence angle.

7. 4. The ion implanter of claim 3, the ion beam shape adjusting module further includes a left arm, a right arm, and a driver; the left arm is disposed on the left side of the ribbon ion beam in a direction of travel, the first upper magnet is fixed to an upper end of the left arm, and the second lower magnet is fixed to a lower end of the left arm; the right arm is disposed on the right side of the ribbon ion beam in a direction of travel, the second upper magnet is fixed to an upper end of the right arm, and the first lower magnet is fixed to a lower end of the right arm; The actuator is coupled to the left arm and the right arm and is used to adjust the spacing between the left arm and the right arm.

8. 8. The ion implanter of claim 7, the ion beam shape adjusting module further includes a vacuum cavity, the left arm and the right arm are disposed within the vacuum cavity; the actuator includes a first slide rail, a second slide rail, a gear, and a motor assembly; The first slide rail includes a first slider and a first guide rail, the first guide rail extends parallel to the direction of the first magnetic field, the first slider is coupled to the left arm and has a rack; The second slide rail includes a second slider and a second guide rail, the second guide rail extends parallel to the direction of the first magnetic field and is located opposite the first guide rail, the second slider is coupled to the right arm and has another rack; the gear simultaneously engages with the rack of the first slider and the other rack of the second slider; The motor assembly is fixed to the outside of the vacuum cavity, and a rotation shaft of the motor assembly passes through a wall of the vacuum cavity and is fixedly connected to the gear.

9. 8. The ion implanter of claim 7, the ion beam shape adjusting module further includes a vacuum cavity, the left arm and the right arm are disposed within the vacuum cavity; the driver includes a first slide, a second slide, a screw, and a motor assembly; the first slide includes a first pulley and a first connecting rod, and is installed outside the vacuum cavity, the first connecting rod extends parallel to the direction of the first magnetic field and penetrates the wall of the vacuum cavity to be fixed to the left arm, the first pulley is coupled to the first connecting rod and has a screw hole; the second slide includes a second pulley and a second connecting rod, and is installed outside the vacuum cavity, the second connecting rod extends parallel to the direction of the first magnetic field and penetrates the wall of the vacuum cavity to be fixed to the right arm, the second pulley is coupled to the second connecting rod and has another screw hole; The screw extends parallel to the direction of the first connecting rod and the direction of the second connecting rod, and passes through the screw hole of the first pulley and the other screw hole of the second pulley at the same time; The motor assembly has a rotation shaft and is fixedly connected to one side of the screw.

10. 10. The ion implanter of claim 9, the screw has a first thread direction where it passes through the threaded hole of the first pulley, and a second thread direction where it passes through the other threaded hole of the second pulley, the first thread direction and the second thread direction being opposite to each other.

11. 10. The ion implanter of claim 9, The driver further includes a first ripple tube and a second ripple tube; The first ripple tube covers the first connecting rod and is fixed to the first pulley and the wall of the vacuum cavity; the second ripple tube covers the second connecting rod and is fixedly connected to the second pulley and the wall of the vacuum cavity.

Images