SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a substrate processor and a method for processing a substrate which can suppress shortage of reduction.SOLUTION: A substrate for reducing a surface of a substrate S including a metal layer in the surface includes: a chamber body 42; a hot plate 22 stored in the chamber body 42, the substrate S being deposited on the hot plate 22; a plasma generation unit 43 for supplying plasma of hydrogen gas into the chamber body 42; and a controller for performing degassing to remove an adsorption material from the surface by driving the hot plate 22 before the plasma generation unit 43 is driven and performing reduction processing of supplying plasma to the surface after the degassing processing by driving the plasma generation unit 43 after driving the hot plate 22.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing system, and a substrate processing method for reducing the surface of a metal layer. [Background technology]

[0002] The hydrogen ions and hydrogen radicals that constitute the hydrogen gas plasma reduce oxides formed on the surface of the metal layer. One example of a substrate processing apparatus mixes an additive gas with the hydrogen gas. The additive gas, which contains nitrogen atoms or oxygen atoms, suppresses the deactivation of activated species generated from the hydrogen gas (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2017 / 029961 Summary of the Invention [Problem to be solved by the invention]

[0004] Adsorbates present on the surface of a metal layer inhibit the reduction of oxides formed on the surface of the metal layer. For example, adsorbates present on the surface of a metal layer may adhere to the surface of the metal layer in the apparatus for forming the metal layer, or may adhere to the surface of the metal layer while the substrate is being transported from the apparatus for forming the metal layer to the apparatus for reducing the oxides. Suppressing insufficient reduction, which is the residual oxide caused by adsorbates, is highly desirable from the perspective of improving the performance and yield of devices equipped with metal layers. [Means for solving the problem]

[0005] A substrate processing apparatus for solving the above problem is a substrate processing apparatus that reduces the surface of a substrate that includes a metal layer on the surface, and includes a chamber body, a hot plate that is housed in the chamber body and on which the substrate is placed, a plasma supply unit that supplies hydrogen gas plasma to the chamber body, and a control unit that performs a degassing process that removes adsorbed matter from the surface by driving the hot plate before driving the plasma supply unit, and a reduction process that supplies the plasma to the surface after the degassing process by driving the plasma supply unit after driving the hot plate.

[0006] A substrate processing system for solving the above problem is a substrate processing system that reduces the surface of a substrate that includes a metal layer on the surface, and includes the substrate processing apparatus described above, wherein the metal layer is a first metal layer, and further includes a film formation chamber that is connected to the chamber body via a transfer chamber and forms a second metal layer on the surface after the reduction process.

[0007] A substrate processing method for solving the above problem is a substrate processing method for reducing the surface of a substrate that includes a metal layer on its surface, and includes the steps of: placing the substrate on a hot plate contained in a chamber body; supplying a thermally conductive gas to the chamber body to increase the pressure in the chamber body; and heating the hot plate to perform a degassing process to remove adsorbed material from the surface; and evacuating the thermally conductive gas and then supplying a hydrogen gas plasma to the surface that has been placed on the hot plate and has been subjected to the degassing process.

[0008] According to each of the above configurations, the degassing process and the reduction process are performed in a single chamber. This promotes oxide reduction compared to substrate processing apparatuses that do not perform degassing. Furthermore, compared to substrate processing apparatuses that perform the degassing process and the reduction process in separate chambers, the need to transfer substrates between chambers is eliminated. This reduces adsorption resulting from substrate transfer and improves the efficiency of substrate processing. As a result, residual oxides due to adsorbates are reduced. This in turn reduces insufficient reduction due to residual oxides.

[0009] The substrate processing apparatus may further include a heat medium supply unit that supplies a heat conduction gas to the chamber body, and the control unit may drive the heat medium supply unit during the degassing process to supply the heat conduction gas from the heat medium supply unit to the chamber body.

[0010] According to the above configuration, since a thermally conductive gas is supplied during the degassing process, heat is easily conducted from the hot plate to the surface of the substrate, which increases the temperature rise rate of the metal layer and ultimately shortens the time required for the degassing process.

[0011] In the above substrate processing apparatus, a pipe connecting the chamber body to an exhaust device is a main pipe, a pipe bypassing the main pipe and connecting the chamber body to the exhaust device is a bypass pipe, the flow resistance of the bypass pipe is higher than that of the main pipe, a main valve for opening and closing the main pipe, and a bypass valve for opening and closing the bypass pipe, and the control unit may open the main valve and close the bypass valve during the reduction treatment, and close the main valve and open the bypass valve during the degassing treatment.

[0012] With this configuration, the residence time of the heat transfer gas in the chamber body is longer than in degassing processes using the main piping, which makes it easier for heat to be transferred from the hot plate to the surface of the substrate, further shortening the time required for degassing.

[0013] The substrate processing apparatus may further include a support portion accommodated in the chamber body, the support portion forming a gap between the support portion and the hot plate and supporting the hot plate via an insulating material disposed in the gap.

[0014] According to the above configuration, a gap is formed between the hot plate and the support, and the hot plate and the support are connected via a heat insulating material, which makes it difficult for the hot plate to dissipate heat toward anything other than the substrate, thereby increasing the temperature rise rate of the metal layer and further shortening the time required for the degassing process.

[0015] In the above-described substrate processing apparatus, the electrical wiring connected to the hot plate may be only a power supply wiring for raising the temperature of the hot plate, and the control unit may increase the pressure of the chamber body during the degassing process to be higher than the pressure of the chamber body during the reduction process.

[0016] The gap between the hot plate and the support member suppresses heat dissipation toward the support member of the hot plate. On the other hand, if a gap is formed between the hot plate and the support member and the hot plate electrostatically attracts a substrate, the power supply required for electrostatic attraction and the increased pressure during degassing using a thermally conductive gas combine to easily generate abnormal discharge in the gap between the hot plate and the support member. In this regard, with the above configuration, the power supply required for electrostatic attraction is not performed, thereby suppressing the occurrence of abnormal discharge in the gap between the support member and the hot plate.

[0017] The substrate processing apparatus may further include a diffusion member made of sintered alumina attached to the chamber body, the diffusion member diffusing the plasma supplied by the plasma supply unit into the chamber body, and the plasma supply unit may include a plasma generation unit that generates the plasma, and a supply pipe made of sintered alumina attached to the chamber body, the supply pipe flowing the plasma generated by the plasma generation unit from the plasma generation unit toward the diffusion member.

[0018] According to the above configuration, the diffusion of plasma by the diffusion member promotes the deactivation of short-lived ions while promoting the reduction of long-lived radicals. This suppresses damage to the substrate caused by excessive ion supply. On the other hand, the diffusion of plasma by the diffusion member involves a large thermal history of the diffusion member. The large thermal history of the diffusion member leads to an increase in particles due to displacement of the diffusion member. In this regard, the supply pipe interposed between the plasma generation unit and the diffusion member extends the plasma flow path length, thereby reducing the number of ions that reach the diffusion member. As a result, the combination of the diffusion of plasma by the diffusion member and the extension of the flow path length by the supply pipe makes it possible to simultaneously suppress damage to the substrate and the increase in particles. [Effects of the Invention]

[0019] According to the substrate processing apparatus, substrate processing system, and substrate processing method of the present disclosure, insufficient reduction on the surface of the metal layer can be suppressed. [Brief explanation of the drawings]

[0020] [Figure 1] FIG. 1 is a diagram showing the configuration of a substrate processing system. [Figure 2] FIG. 2 is a diagram showing the configuration of a substrate processing apparatus included in the substrate processing system. [Figure 3] FIG. 3 is a flow chart showing the process sequence of the substrate processing method. [Figure 4] FIG. 4 is a timing chart showing the gas supply sequence in the substrate processing method. DETAILED DESCRIPTION OF THE INVENTION

[0021] [Substrate processing system] 1, the substrate processing system includes a transfer chamber 11, two load / unload chambers 12A and 12B, two film formation chambers 13A and 13B, two pre-processing chambers 14A and 14B, two cooling chambers 15A and 15B, and a control unit 50. Although the substrate processing system shown in FIG. 1 includes one transfer chamber 11, the substrate processing system may include multiple transfer chambers 11.

[0022] Each of the loading / unloading chambers 12A, 12B loads and unloads a substrate S. The substrate S is a target to which plasma of hydrogen gas FH2 (see FIG. 4) is supplied. The surface of the substrate S has a first metal layer made of copper, tungsten, or the like. The surface of the first metal layer contains an oxide of the metal that makes up the first metal layer. The surface of the substrate S may also have a silicon layer or a silicon oxide layer.

[0023] Each pre-treatment chamber 14A, 14B performs pre-treatment on the surface of the substrate S. The pre-treatment consists of a degassing treatment using a thermally conductive gas FHE (see FIG. 4) and a reduction treatment using a plasma of hydrogen gas FH2. Each film formation chamber 13A, 13B performs film formation on the surface of the substrate S. Each film formation chamber 13A, 13B forms a second metal layer on the surface of the substrate S after the pre-treatment. Each cooling chamber 15A, 15B cools the substrate S after the film formation treatment.

[0024] The substrate processing apparatus, substrate processing system, and substrate processing method will be described below using the loading / unloading chamber 12A, the film formation chamber 13A, the pre-processing chamber 14A, and the cooling chamber 15A. Explanations of the loading / unloading chamber 12B, the film formation chamber 13B, the pre-processing chamber 14B, and the cooling chamber 15B that overlap with those of the loading / unloading chamber 12A, the film formation chamber 13A, the pre-processing chamber 14A, and the cooling chamber 15A will be omitted.

[0025] The loading / unloading chamber 12A loads the substrate S having a metal layer on its surface into the substrate processing system, and unloads the processed substrate S from the substrate processing system. The transfer chamber 11 is connected to each of the chambers 12A, 12B, 13A, 13B, 14A, 14B, 15A, and 15B. The transfer chamber 11 is equipped with a transfer robot 11R. The transfer robot 11R transfers the substrate S in accordance with instructions from the control unit 50. The transfer robot 11R loads the unprocessed substrate S from the load / unload chamber 12A into the transfer chamber 11. The transfer robot 11R transfers the unprocessed substrate S from the transfer chamber 11 to the pre-processing chamber 14A. The transfer robot 11R transfers the pre-processed substrate S from the pre-processing chamber 14A to the film formation chamber 13A. The transfer robot 11R transfers the film-formed substrate S from the film formation chamber 13A to the cooling chamber 15A. The transfer robot 11R unloads the cooled substrate S from the cooling chamber 15A to the load / unload chamber 12A.

[0026] The control unit 50 includes electronic circuits such as a CPU and an MPU. The control unit 50 includes storage such as an SSD and an HDD. The control unit 50 includes memory such as a ROM, a RAM, and a registered memory. The control unit 50 may also include an integrated circuit such as an ASIC or an FPGA. The control unit 50 includes a substrate processing program for executing a substrate processing method. By executing the substrate processing program, the control unit 50 performs a transfer process, a reduction process, a film formation process, and a cooling process for the substrate S in each of the chambers 12A, 12B, 13A, 13B, 14A, 14B, 15A, and 15B. All of the processes performed by the control unit 50 may be executed by software included in the control unit 50, or may be executed by a combination of an integrated circuit and software included in the control unit 50.

[0027] [Substrate processing equipment] The substrate processing apparatus includes a pre-processing chamber 14A and a control unit 50. 2, the pre-processing chamber 14A includes a chamber body 42 and a plasma generating unit 43. The chamber body 42 is connected to the plasma generating unit 43 via a supply pipe 44.

[0028] The plasma generating unit 43 is supplied with various process gases SG from various supply pipes. The plasma generating unit 43 is connected to a supply pipe for hydrogen gas FH2, a supply pipe for additive gas, and a supply pipe for thermal conduction gas FHE. The additive gas may contain at least one selected from the group consisting of nitrogen gas, oxygen gas FO2 (see FIG. 4), nitric oxide gas, nitrogen dioxide gas, ammonia, argon gas FAR (see FIG. 4), and a rare gas. The thermal conduction gas FHE contains a rare gas such as helium.

[0029] The plasma generating unit 43 generates plasma of hydrogen gas FH2. The plasma generating unit 43 may be a magnetron-type plasma source or an inductively coupled plasma source, as long as it can generate plasma from hydrogen gas FH2 or a mixed gas of hydrogen gas FH2 and an additive gas. The plasma of hydrogen gas FH2 contains reducing hydrogen ions and hydrogen radicals. The control unit 50 controls the start and stop of plasma generation by the plasma generating unit 43. During the reduction process, the control unit 50 causes the plasma generating unit 43 to generate plasma of hydrogen gas FH2 and supply the plasma of hydrogen gas FH2 to the chamber body 42.

[0030] The plasma generating unit 43 supplies a thermal conduction gas FHE to the chamber body 42 to heat the substrate S. The control unit 50 controls the start and stop of the supply of the thermal conduction gas FHE by the plasma generating unit 43. The control unit 50 causes the plasma generating unit 43 to supply the thermal conduction gas FHE during the degassing process.

[0031] The supply pipe 44 is connected to the chamber body 42 and the plasma generation unit 43. The supply pipe 44 flows the plasma generated by the plasma generation unit 43 toward the chamber body 42. The inner surface of the flow path of the supply pipe 44 may be made of sintered alumina. The supply pipe 44 itself may be a pipe made of sintered alumina. The flow path length of the supply pipe 44 is, for example, 50 mm or more and 200 mm or less. The flow path length of the supply pipe 44 reduces the frequency at which ions generated by the plasma generation unit 43 reach the chamber body 42.

[0032] The plasma generating unit 43 and the supply pipe 44 constitute a plasma supply unit. The plasma generating unit 43 also serves as a heat medium supply unit that supplies the heat conduction gas FHE to the chamber main body 42. The chamber body 42 is connected to an exhaust system. The exhaust system includes a main valve 45, a bypass valve 46, a cold trap 47, a turbo pump 48, and an exhaust pump 49. The cold trap 47, the turbo pump 48, and the exhaust pump 49 constitute an exhaust device.

[0033] The main valve 45 opens and closes the main pipe. The main pipe connects the chamber main body 42 to the cold trap 47. The bypass valve 46 opens and closes the bypass pipe. The bypass pipe connects the chamber main body 42 to the cold trap 47, bypassing the main pipe. The bypass pipe has a higher flow resistance than the main pipe.

[0034] The control unit 50 closes the main valve 45 and opens the bypass valve 46 during the degassing process, thereby creating a high-pressure environment in the chamber main body 42 during the degassing process. The control unit 50 opens the main valve 45 and closes the bypass valve 46 during the reduction process, thereby creating a low-pressure environment in the chamber main body 42 during the reduction process.

[0035] The chamber body 42 houses the support 21, the hot plate 22, and the diffusion member 23. The hot plate 22 is connected to a heating power source 45G via a power supply wiring 45A. The only electrical wiring connected to the hot plate 22 is the power supply wiring 45A for raising the temperature of the hot plate 22.

[0036] The diffusion member 23 is disposed so as to face the outlet of the supply pipe 44. The surface of the diffusion member 23 may be made of sintered alumina. The diffusion member 23 itself may be made of sintered alumina. The diffusion member 23 collides with the plasma flowing from the outlet of the supply pipe 44 toward the diffusion member 23, thereby diffusing the plasma of hydrogen gas FH2 in the radial direction of the chamber body 42. Diffusion by the diffusion member 23 promotes deactivation of short-lived ions while promoting reduction of long-lived radicals.

[0037] The support portion 21 supports the hot plate 22 via a heat insulator 24. The support portion 21 is connected to a ground potential. The support portion 21 forms a gap between the support portion 21 and the hot plate 22. The heat insulator 24 for supporting the hot plate 22 is disposed in the gap between the support portion 21 and the hot plate 22. The gap between the support portion 21 and the hot plate 22 prevents the hot plate 22 from short-circuiting. The substrate S is placed on the hot plate 22. The surface of the substrate S has a first metal layer. The hot plate 22 heats the substrate S placed on the hot plate 22 by a current supplied from a heating power source 45G. The control portion 50 controls the start and stop of the current supply from the heating power source 45G.

[0038] [Substrate processing method] A substrate processing method executed by the substrate processing apparatus will now be described. 3, the substrate processing method includes a degassing process (step S11), an exhaust process (step S12), and a reduction process (step S13). The degassing process removes adsorbates from the surface of the substrate S. The exhaust process exhausts the thermal conduction gas FHE from the chamber body 42 after the degassing process. The reduction process supplies a plasma of hydrogen gas FH2 to the substrate S after the exhaust process. The substrate processing system forms a second metal layer on the surface of the substrate S after the reduction process in each of the film formation chambers 13A and 13B.

[0039] 4, at timing t0, the control unit 50 drives the transfer robot 11R to load the substrate S from the load / unload chamber 12A into the pre-processing chamber 14A. The control unit 50 places the substrate S on the hot plate 22 and starts driving the hot plate 22. As a result, the control unit 50 starts raising the temperature of the substrate S.

[0040] At timing t1, the control unit 50 starts supplying the thermal conduction gas FHE from the plasma generation unit 43 to the chamber body 42, closes the main valve 45, and opens the bypass valve 46. The control unit 50 then increases the pressure PA in the chamber body 42 and creates a high-pressure environment with the thermal conduction gas FHE inside the chamber body 42. In this way, the control unit 50 applies the increased pressure in the chamber body 42 to the heating of the hot plate 22, thereby increasing the efficiency of removing adsorbates from the surface of the substrate S.

[0041] At timing t2, the control unit 50 stops the supply of the thermal conduction gas FHE, opens the main valve 45, and closes the bypass valve 46. Note that before opening the main valve 45, the pressure in the chamber main body 42 can also be reduced to the maximum allowable intake pressure of the turbo pump 48 by evacuating the chamber main body 42 through the bypass valve 46 for 1 to 9 seconds. Then, the control unit 50 starts the evacuation process, and starts the supply of the additive gases argon gas FAR, oxygen gas FO2, and hydrogen gas FH2 by timing t3.

[0042] After forming a low-pressure environment in the chamber body 42 using argon gas FAR, oxygen gas FO2, and hydrogen gas FH2, the control unit 50 inputs a drive signal S43 to the plasma generation unit 43 to start driving the plasma generation unit 43. Note that the stability of plasma ignition can be improved by introducing oxygen gas FO2 and hydrogen gas FH2 after introducing only argon gas FAR, which has a low ionization voltage, to generate plasma. The control unit 50 then continues to supply plasma of hydrogen gas FH2 to the surface of the substrate S until timing t4. This allows the control unit 50 to reduce oxides on the surface of the first metal layer that has undergone degassing treatment.

[0043] As described above, according to the above embodiment, the following effects can be obtained. (1) The degassing process and the reduction process are performed in a single chamber body 42. This promotes oxide reduction compared to substrate processing apparatuses that do not perform degassing. Furthermore, compared to substrate processing apparatuses that perform degassing and reduction processes in separate chambers, the need to transfer substrates between chambers is eliminated. This reduces adsorption resulting from the transfer of the substrates S and also improves the efficiency of substrate processing. As a result, residual oxides resulting from adsorbates are reduced. This in turn reduces insufficient reduction due to residual oxides.

[0044] (2) Because the thermally conductive gas FHE is supplied during the degassing process, heat is easily conducted from the hot plate 22 to the surface of the substrate S. This increases the rate at which the temperature of the first metal layer rises, and ultimately shortens the time required for the degassing process.

[0045] (3) Compared to degassing using the main piping, the residence time of the thermally conductive gas FHE in the chamber body 42 is longer. Therefore, heat is more easily conducted from the hot plate 22 to the surface of the substrate S, and the time required for the degassing process can be further shortened.

[0046] (4) A gap is formed between the hot plate 22 and the support portion 21, and the hot plate 22 and the support portion 21 are connected via the heat insulating material 24. This makes it difficult for the hot plate 22 to dissipate heat to any direction other than the substrate S, thereby increasing the rate at which the temperature of the first metal layer rises and further shortening the time required for the degassing process.

[0047] (5) The gap between the hot plate 22 and the support portion 21 suppresses heat dissipation from the hot plate 22 toward the support portion 21. On the other hand, if a gap is formed between the hot plate 22 and the support portion 21 and the hot plate 22 electrostatically attracts the substrate S, the power supply required for electrostatic attraction and the pressure increase during the degassing process using the thermally conductive gas FHE combine to easily generate abnormal discharge in the gap between the hot plate 22 and the support portion 21. In this regard, because the power supply required for electrostatic attraction is not performed, the occurrence of abnormal discharge in the gap between the support portion 21 and the hot plate 22 is suppressed.

[0048] (6) The diffusion of plasma by the diffusion member 23 promotes the deactivation of short-lived ions while promoting the reduction of long-lived radicals. This suppresses damage to the substrate S due to excessive ion supply. On the other hand, the diffusion of plasma by the diffusion member 23 is accompanied by a large thermal history of the diffusion member 23. The large thermal history of the diffusion member 23 leads to an increase in particles due to displacement of the diffusion member 23. In this regard, the supply pipe 44 interposed between the plasma generation unit 43 and the diffusion member 23 increases the plasma flow path length, thereby reducing the number of ions that reach the diffusion member 23. As a result, the combination of the diffusion of plasma by the diffusion member 23 and the extension of the flow path length by the supply pipe 44 makes it possible to simultaneously suppress damage to the substrate S and suppress an increase in particles.

[0049] [Example of change] The above embodiment can be modified as follows. The surface of the diffusion member 23 may be covered with an anodized coating. The inner surface of the supply pipe 44 may be covered with an anodized coating.

[0050] The hot plate 22 may be an electrostatic chuck that electrostatically attracts the substrate S. In this case, the control unit 50 reduces the pressure in the chamber body 42 during the degassing process and the reduction process so that abnormal discharge does not occur in the gap between the support unit 21 and the hot plate 22.

[0051] The substrate processing apparatus may include a single exhaust pipe common to the degassing process and the reduction process. That is, the substrate processing apparatus may perform the degassing process using a main pipe. The substrate processing apparatus may include a heat medium supply unit that is separate from the plasma generating unit 43, and the heat conduction gas FHE may be supplied to the chamber main body 42 from the heat medium supply unit. [Explanation of symbols]

[0052] FH2...hydrogen gas FHE: Heat transfer gas PA...pressure S...Substrate 11...Transport chamber 11R...Transport robot 12A, 12B...Loading / unloading chamber 13A, 13B...film formation chamber 14A, 14B...Pre-treatment chamber 15A, 15B...Cooling chamber 21...Support part 22...Hot plate 23...Diffusion element 42...Chamber body 43...Plasma generating unit 44...Supply piping 45...Main valve 46...Bypass valve 50...Control unit

Claims

1. 1. A substrate processing apparatus for reducing a surface of a substrate including a metal layer on the surface, comprising: A chamber body; a hot plate accommodated in the chamber body and on which the substrate is placed; a plasma supply unit that supplies hydrogen gas plasma to the chamber body; a control unit that executes a degassing process to remove adsorbed matter from the surface by driving the hot plate before driving the plasma supply unit, and a reduction process to supply the plasma to the surface after the degassing process by driving the plasma supply unit after driving the hot plate. A substrate processing apparatus characterized by:

2. a heat medium supply unit that supplies a heat conduction gas to the chamber body, The control unit drives the heat medium supply unit in the degassing process to supply the heat conduction gas from the heat medium supply unit to the chamber main body. The substrate processing apparatus according to claim 1 .

3. a main pipe is a pipe connecting the chamber body to an exhaust device; a bypass pipe that bypasses the main pipe and connects the chamber body to the exhaust device, the bypass pipe having a higher flow resistance than the main pipe; a main valve that opens and closes the main pipe; a bypass valve that opens and closes the bypass piping, The control unit During the reduction process, the main valve is opened and the bypass valve is closed; During the degassing process, the main valve is closed and the bypass valve is opened. The substrate processing apparatus according to claim 2 .

4. a support part accommodated in the chamber body, the support part forming a gap between the support part and the hot plate and supporting the hot plate via a heat insulating material disposed in the gap; The substrate processing apparatus according to claim 2 .

5. The only electrical wiring connected to the hot plate is a power supply wiring for raising the temperature of the hot plate, The control unit increases the pressure in the chamber body during the degassing process to be higher than the pressure in the chamber body during the reduction process. The substrate processing apparatus according to claim 4 .

6. a diffusion member made of sintered alumina attached to the chamber body, the diffusion member diffusing the plasma supplied by the plasma supply unit into the chamber body; The plasma supply unit is a plasma generating unit that generates the plasma; a supply pipe made of sintered alumina attached to the chamber body, the supply pipe allowing the plasma generated by the plasma generating unit to flow from the plasma generating unit toward the diffusion member. The substrate processing apparatus according to claim 1 .

7. 1. A substrate processing system for reducing a surface of a substrate including a metal layer on the surface, comprising: The substrate processing apparatus according to claim 1 , the metal layer is a first metal layer; a film-forming chamber connected to the chamber body via a transfer chamber, for forming a second metal layer on the surface after the reduction treatment; A substrate processing system comprising:

8. 1. A substrate processing method for reducing a surface of a substrate including a metal layer on the surface, comprising: a degassing process in which the substrate is placed on a hot plate housed in a chamber body, a thermally conductive gas is supplied to the chamber body to increase the pressure in the chamber body, and adsorbed substances are removed from the surface by heating the hot plate; and a reduction treatment of supplying a hydrogen gas plasma to the surface placed on the hot plate after the degassing treatment, after the thermal conduction gas is exhausted. A substrate processing method comprising:

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