Joining device, joining system, and joining method

Abstract

A bonding method for bonding substrates together, the method comprising: (a) a step for moving a first holding part and a second holding part relative to each other by a movement mechanism so as to cause a first substrate being held on the undersurface of the first holding part and a second substrate being held on the top surface of the second holding part to be disposed to face each other; (b) a step for bringing the central part of the first substrate and the central part of the second substrate into abutment with each other by means of an abutment member; (c) a step for bonding the first substrate and the second substrate from the central part of the first substrate toward the outer peripheral part thereof in a state in which the central part of the first substrate and the central part of the second substrate are in abutment with each other; and (d) a step for measuring, at least in said step (c), a real position of the first holding part and / or the second holding part moved in the step (a), and inspecting the state of the bonding process on the basis of the real position.

Description

[Technical Field]

[0001] This disclosure relates to a joining device, a joining system, and a joining method. [Background technology]

[0002] Patent Document 1 discloses a bonding apparatus for joining wafers together. This bonding apparatus has an upper chuck on its lower surface that holds the upper wafer by vacuum suction, and a lower chuck provided below the upper chuck that holds the lower wafer by vacuum suction on its upper surface, and bonds two wafers that are positioned facing each other vertically. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2015-095579 [Overview of the project] [Problems that the invention aims to solve]

[0004] The technology described herein appropriately inspects the state of the bonding process of a substrate. [Means for solving the problem]

[0005] One aspect of the present disclosure is a bonding apparatus for bonding substrates together, comprising: a first holding portion that holds a first substrate on its lower surface; a second holding portion provided below the first holding portion and holding a second substrate on its upper surface; a contact member that brings the center of the first substrate into contact with the center of the second substrate; a moving mechanism that moves the first holding portion and the second holding portion relative to each other; a measuring unit that measures the position of at least one of the first holding portion or the second holding portion; and a control unit, wherein the control unit (a) moves the first holding portion and the second holding portion relative to each other, and the first substrate held by the first holding portion and the second substrate held by the second holding portion The first holding part, the second holding part, the contact member, the moving mechanism, and the measuring unit are controlled to perform the following steps: (b) placing the first and second substrates opposite each other; (c) bringing the center of the first substrate into contact with the center of the second substrate; (d) sequentially joining the first substrate and the second substrate from the center of the first substrate toward the outer periphery while the center of the first substrate and the center of the second substrate are in contact; and (e) measuring the actual position of at least one of the first holding part or the second holding part that was moved in step (a) in step (c), and inspecting the state of the joining process based on the actual position. [Effects of the Invention]

[0006] According to this disclosure, the state of the bonding process of the substrate can be properly inspected. [Brief explanation of the drawing]

[0007] [Figure 1] This is a plan view showing a schematic configuration of the joining system according to this embodiment. [Figure 2] This is a side view showing a schematic of the internal configuration of the joining system according to this embodiment. [Figure 3] This is a side view showing a schematic configuration of the upper and lower wafers. [Figure 4] This is a cross-sectional view showing a schematic configuration of the joining device. [Figure 5] This is a longitudinal cross-sectional view showing a schematic configuration of the joining device. [Figure 6] This is a longitudinal cross-sectional view showing the general configuration of the upper and lower zippers. [Figure 7] This flowchart shows the main steps involved in wafer bonding. [Figure 8] This is an explanatory diagram showing the main steps of the wafer bonding process. [Figure 9] This is an explanatory diagram of the positional deviation of the upper zipper and the positional deviation of the lower zipper. [Figure 10] This graph shows the change over time in the θ-axis position deviation of the upper chuck. [Modes for carrying out the invention]

[0008] In 3D integration technology, which involves stacking semiconductor devices in a three-dimensional structure, two semiconductor wafers (hereinafter referred to as "wafers") are joined together. In the joining process, the wafers are joined together, for example, by van der Waals forces and hydrogen bonds (intermolecular forces).

[0009] In the bonding apparatus disclosed in Patent Document 1, first, the center of the upper wafer, which is held by suction on the upper chuck, is pressed down by a pushing member and brought into contact with the center of the lower wafer, which is held by suction on the lower chuck. When this happens, bonding by the intermolecular forces described above begins between the pressed center of the upper wafer and the center of the lower wafer. Next, the vacuum of the upper wafer is stopped from the center outward, and the upper wafer falls onto the lower wafer in sequence and comes into contact with it, and the bonding by the intermolecular forces between the surfaces described above expands in sequence. In this way, the surfaces of the upper wafer and the lower wafer come into contact over their entire surfaces, and the upper wafer and the lower wafer are bonded together.

[0010] However, the bonding apparatus disclosed in Patent Document 1 does not take into consideration the inspection of the bonding state of the wafer.

[0011] Here, in order to inspect the bonding state of the wafer, for example, an optical displacement meter (sensor) may be provided on the upper chuck to measure the distance from the bottom surface of the displacement meter to the back surface of the upper wafer. For example, the bonding state of the wafer is inspected based on the change in the distance between the state where the upper wafer is adsorbed and held and the state where the upper wafer has fallen and abutted against the lower wafer. However, depending on the state of the back surface of the upper wafer, such as the film type and film thickness of the back surface, the displacement meter may not be able to measure the above distance. Therefore, there is room for improvement in the conventional wafer bonding process.

[0012] The technology according to the present disclosure appropriately inspects the state of the bonding process of the substrate. Hereinafter, the bonding apparatus according to the present embodiment, the bonding system including the bonding apparatus, and the bonding method will be described with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0013] <Configuration of Bonding System> First, the configuration of the bonding system according to the present embodiment will be described. FIG. 1 is a plan view showing an outline of the configuration of the bonding system 1. FIG. 2 is a side view showing an outline of the internal configuration of the bonding system 1. In the following, in order to clarify the positional relationship, the X-axis direction, Y-axis direction, and Z-axis direction orthogonal to each other are defined, and the positive Z-axis direction is the vertically upward direction.

[0014] In the bonding system 1, as shown in FIG. 3, for example, wafers W L , U1 , U2 , U , U1 , L , L1 , W L are bonded. Hereinafter, the wafer disposed on the upper side is referred to as the "upper wafer W U ", and the wafer disposed on the lower side is referred to as the "lower wafer W L ". Also, the bonding surface to which the upper wafer W U is bonded is referred to as the "surface W U1 ", and the surface opposite to the surface W U1 is referred to as the "back surface W U2 ". Similarly, the bonding surface to which the lower wafer W L is bonded is referred to as the "surface W <000001" and the surface W L1 The opposite side is called "backside W" L2 " And in bonding system 1, the upper wafer W U and lower wafer W L By joining them, a polymerized wafer W is formed as a polymerization substrate. T It forms.

[0015] The bonding system 1, as shown in Figure 1, can bond multiple wafers W to the outside, for example. U , W L Multiple polymerized wafers W T Each can accommodate a cassette C U , C L , C T Loading / unloading station 2 and wafer W U , W L Polymerized wafer W T It has a configuration in which a processing station 3 equipped with various processing devices that perform desired processing on the material is integrally connected.

[0016] The loading / unloading station 2 is equipped with a cassette mounting platform 10. The cassette mounting platform 10 is equipped with multiple, for example, four, cassette mounting plates 11. The cassette mounting plates 11 are arranged in a row in the horizontal Y-axis direction (vertical direction in Figure 1). These cassette mounting plates 11 are positioned so that the cassette C is facing the outside of the bonding system 1. U , C L , C T When loading and unloading, Cassette C U , C L , C T It can be placed on. In this way, the loading / unloading station 2 can accommodate multiple upper wafers W U , multiple lower wafers W L Multiple polymerized wafers W T It is configured to hold the above. Note that the number of cassette mounting plates 11 is not limited to this embodiment and can be set arbitrarily. Also, one of the cassettes may be used for recovering defective wafers. That is, due to various factors, the upper wafer W U and lower wafer W L A wafer in which an abnormality occurred during bonding with another normal polymerized wafer W TThis is a cassette that can be separated from the cassette. In this embodiment, there are multiple cassettes C T Of these, one cassette C T This is used for recovering abnormal wafers, and other cassettes C T normal polymerization wafer W T It is used for housing [the animals].

[0017] The loading / unloading station 2 is provided with a wafer transport section 20 adjacent to the cassette mounting table 10. The wafer transport section 20 is provided with a wafer transport device 22 that is movable along a transport path 21 extending in the Y-axis direction. The wafer transport device 22 is also movable in the vertical direction and around the vertical axis (θ-axis), and transports cassettes C on each cassette mounting plate 11. U , C L , C T And, between the transition devices 50 and 51 of the third processing block G3 of processing station 3, which will be described later, wafer W U , W L Polymerized wafer W T It can transport.

[0018] Processing station 3 is equipped with multiple processing blocks, such as three processing blocks G1, G2, and G3, each containing various devices. For example, the first processing block G1 is located on the front side of processing station 3 (negative Y-axis direction in Figure 1), and the second processing block G2 is located on the rear side of processing station 3 (positive Y-axis direction in Figure 1). In addition, the third processing block G3 is located on the loading / unloading station 2 side of processing station 3 (negative X-axis direction in Figure 1).

[0019] The first processing block G1 contains wafer W U , W L Surface W U1 , W L1 A surface modification apparatus 30 is provided to modify the surface W. In the surface modification apparatus 30, for example, under a reduced pressure atmosphere, oxygen gas or nitrogen gas, which is the treatment gas, is excited and plasma-generated and ionized. These oxygen ions or nitrogen ions are then applied to the surface W. U1 , W L1 When irradiated, surface W U1 , WL1 It is then plasma-treated and modified.

[0020] In the second processing block G2, for example, the wafer W is treated with pure water. U , W L Surface W U1 , W L1 The surface W is made hydrophilic. U1 , W L1 Surface hydrophilization apparatus 40 for cleaning wafer W U , W L The joining devices 41 that connect the components are arranged in this order along the horizontal X-axis direction, starting from the loading / unloading station 2 side. The configuration of the joining devices 41 will be described later.

[0021] In the surface hydrophilization apparatus 40, for example, a wafer W held in a spin chuck U , W L While rotating the wafer W U , W L Pure water is supplied from above. Then the supplied pure water becomes wafer W U , W L Surface W U1 , W L1 Diffuses above, surface W U1 , W L1 It becomes hydrophilic.

[0022] The third processing block G3 is wafer W, as shown in Figure 2. U , W L Polymerized wafer W T The transition devices 50 and 51 are arranged in two stages from bottom to top.

[0023] As shown in Figure 1, a wafer transport area 60 is formed in the region enclosed by the first processing block G1 to the third processing block G3. A wafer transport device 61, for example, is arranged in the wafer transport area 60.

[0024] The wafer transfer device 61 has a transfer arm that can move, for example, in the vertical direction, horizontal direction (X-axis direction, Y-axis direction) and vertical axis (θ-axis). The wafer transfer device 61 moves within the wafer transfer area 60 and transfers the wafer W to the desired device in the surrounding first processing block G1, second processing block G2 and third processing block G3. U , W L Polymerized wafer W T It can transport.

[0025] The bonding system 1 described above is provided with a control device 70 as a control unit. The control device 70 is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores a program that controls the wafer processing in the bonding system 1. The program may have been recorded on a storage medium H that is readable by the computer and installed from the storage medium H to the control device 70. The storage medium H may be temporary or permanent.

[0026] <Configuration of the joining device> Next, the configuration of the joining device 41 described above will be explained. Figure 4 is a cross-sectional view showing a schematic of the configuration of the joining device 41. Figure 5 is a vertical cross-sectional view showing a schematic of the configuration of the joining device 41.

[0027] (Overall configuration of the joining device) The bonding apparatus 41 has a processing container 100 that can be sealed inside, as shown in Figures 4 and 5. On the side of the processing container 100 on the wafer transport area 60 side, there is a wafer W U , W L Polymerized wafer W T An entrance / exit 101 is formed, and an opening / closing shutter 102 is provided at the entrance / exit 101.

[0028] The interior of the processing container 100 is divided into a transport area T1 and a processing area T2 by an inner wall 103. The aforementioned loading / unloading port 101 is formed on the side of the processing container 100 in the transport area T1. The inner wall 103 also has a wafer W U, W L , superposed wafer W T has an inlet / outlet 104 formed therein.

[0029] On the positive Y-axis side of the transfer region T1, there is a transition 110 for temporarily placing the wafer W U , W L , superposed wafer W T is provided. The transition 110 is formed in, for example, two stages and can simultaneously place any two of the wafer W U , W L , superposed wafer W T .

[0030] A wafer transfer mechanism 111 is provided in the transfer region T1. The wafer transfer mechanism 111 has, for example, a transfer arm that is movable in the vertical direction, horizontal directions (X-axis direction, Y-axis direction), and around the vertical axis (θ-axis). And the wafer transfer mechanism 111 can transfer the wafer W U , W L , superposed wafer W T within the transfer region T1 or between the transfer region T1 and the processing region T2.

[0031] On the negative Y-axis side of the transfer region T1, a position adjustment mechanism 120 for adjusting the horizontal orientation of the wafer W U , W L is provided. The position adjustment mechanism 120 includes a base 121 having a holding portion (not shown) that holds and rotates the wafer W U , W L , and a detection portion 122 that detects the position of the notch portion of the wafer W U , W L . In the position adjustment mechanism 120, the detection portion 122 detects the position of the notch portion of the wafer W U , W L while rotating the wafer W held by the base 121, thereby adjusting the position of the notch portion to adjust the horizontal orientation of the wafer W U , W L . Note that on the base 121, the wafer W U , W L U , W L ​The method of holding the object is not particularly limited, and various methods are used, such as the pin chuck method and the spin chuck method.

[0032] Furthermore, the transport region T1 contains the upper wafer W U A reversal mechanism 130 is provided to reverse the front and back surfaces. The reversal mechanism 130 is provided for the upper wafer W U It has a holding arm 131 that holds the upper wafer W. The holding arm 131 extends horizontally (in the X-axis direction). The holding arm 131 also has a holding arm that holds the upper wafer W. U For example, four retaining members 132 are provided to hold the object.

[0033] The holding arm 131 is supported by a drive unit 133, which includes, for example, a motor. This drive unit 133 allows the holding arm 131 to rotate around a horizontal axis. Furthermore, the holding arm 131 is both rotatable around the drive unit 133 and movable in the horizontal direction (X-axis direction). Below the drive unit 133, another drive unit (not shown), which includes, for example, a motor, is provided. This other drive unit allows the drive unit 133 to move vertically along a support column 134 that extends vertically. In this way, the upper wafer W held by the holding member 132 is supported by the drive unit 133. U It can rotate around the horizontal axis and move in the vertical and horizontal directions. Also, the upper wafer W held by the holding member 132 U It can rotate around the drive unit 133 and move between the position adjustment mechanism 120 and the upper chuck 140, which will be described later.

[0034] Processing area T2 contains the upper wafer W U An upper chuck 140 serves as a first holding part that holds the lower wafer W by adsorption on its lower surface, and the lower wafer W L A lower chuck 141 is provided as a second holding part that places and holds the upper wafer W on its upper surface. The lower chuck 141 is provided below the upper chuck 140 and is configured to be positioned opposite the upper chuck 140. That is, the upper wafer W held by the upper chuck 140 U and the lower wafer W held in the lower chuck 141 L They can be positioned opposite each other.

[0035] The upper chuck 140 is supported by an upper chuck stage 150 located above the upper chuck 140. The lower wafer W held by the lower chuck 141 is supported by the upper chuck stage 150. L Surface W L1 An upper imaging unit 151 is provided for capturing images. That is, the upper imaging unit 151 is provided adjacent to the upper chuck 140. For example, a CCD camera is used in the upper imaging unit 151.

[0036] The upper chuck stage 150 is supported above the upper chuck stage 150 by a rotating part 153, which is a moving mechanism provided on the ceiling surface of the processing container 110 via a plurality of support members 152. The rotating part 153 is configured to rotate the upper chuck stage 150 and the upper chuck 140 around a vertical axis (θ axis). The rotating part 153 incorporates, for example, a driver 153a, which is a servo driver, and a motor 153b, which is a servo motor.

[0037] The rotating part 153 is provided with a linear scale 154 as a measuring part. The linear scale 154 measures the θ-axis position of the upper chuck 140. Although the linear scale 154 measures the θ-axis position of the rotating part 153, the rotating part 153, the support member 152, the upper chuck stage 150, and the upper chuck 140 are rigid bodies, so it effectively measures the θ-axis position of the upper chuck 140.

[0038] Furthermore, the configuration for rotating the upper chuck 140 and the configuration for measuring the θ-axis position of the upper chuck 140 are not limited to this embodiment and can be designed arbitrarily.

[0039] The lower chuck 141 is supported by a lower chuck stage 160 located below the lower chuck 141. The lower chuck stage 160 holds the upper wafer W held by the upper chuck 140. U Surface W U1A lower imaging unit 161 is provided for capturing images. That is, the lower imaging unit 161 is provided adjacent to the lower chuck 141. For example, a CCD camera is used in the lower imaging unit 161.

[0040] The lower chuck stage 160 is equipped with a first laser interferometer 162 and a second laser interferometer 163 as measuring units. The first laser interferometer 162 is located on the negative Y-axis side of the lower chuck stage 160 and measures the X-axis and Z-axis positions of the lower chuck 141. The second laser interferometer 163 is located on the positive X-axis side of the lower chuck stage 160 and measures the Y-axis position of the lower chuck 141. The Z-axis position of the lower chuck 141 may also be measured by the second laser interferometer 163.

[0041] The lower chuck stage 160 is supported by a first lower chuck moving part 164, which is a moving mechanism located below the lower chuck stage 160. The first lower chuck moving part 164 is configured to move the lower chuck 141 in the horizontal direction (X-axis direction), as will be described later. The first lower chuck moving part 164 is also configured to move the lower chuck 141 in the vertical direction (Z-axis direction). The first lower chuck moving part 164 incorporates, for example, a driver 164a, which is a servo driver, and a motor 164b, which is a servo motor. In this embodiment, the first lower chuck moving part 164 moves the lower chuck 141 in the X-axis direction and the Z-axis direction, but separate moving parts may be provided for moving the lower chuck 141 in the X-axis direction and for moving it in the Z-axis direction.

[0042] The first lower chuck moving part 164 is provided on the lower side of the first lower chuck moving part 164 and is attached to a pair of rails 165, 165 that extend horizontally (in the X-axis direction). The first lower chuck moving part 164 is configured to be movable along the rails 165.

[0043] A pair of rails 165, 165 are arranged on a second lower chuck moving section 166, which serves as a moving mechanism. The second lower chuck moving section 166 is provided on the lower side of the second lower chuck moving section 166 and is attached to a pair of rails 167, 167 that extend horizontally (in the Y-axis direction). The second lower chuck moving section 166 is configured to move freely along the rails 167, that is, to move the lower chuck 141 horizontally (in the Y-axis direction). The second lower chuck moving section 166 incorporates, for example, a driver 166a, which is a servo driver, and a motor 166b, which is a servo motor. The pair of rails 167, 167 are arranged on a mounting base 168 provided on the bottom surface of the processing container 100.

[0044] Furthermore, the configuration for moving the lower chuck 141 in the X-axis, Y-axis, and Z-axis directions, and the configuration for measuring the X-axis, Y-axis, and Z-axis positions of the lower chuck 141, are not limited to this embodiment and can be designed arbitrarily.

[0045] (Consists of an upper zipper and a lower zipper) Next, the detailed configuration of the upper chuck 140 and lower chuck 141 of the joining device 41 will be described. Figure 6 is a longitudinal cross-sectional view showing a schematic configuration of the upper chuck 140 and lower chuck 141.

[0046] The upper chuck 140 employs a pin chuck system as shown in Figure 6. In a plan view, the upper chuck 140 is located on the upper wafer W U It has a main body portion 170 having a diameter greater than or equal to the diameter of the upper wafer W. U W on the back U2 Multiple pins 171 are provided to contact the upper wafer W. U W on the back U2 An outer rib 172 is provided to support the outer circumference. The outer rib 172 is provided in an annular shape on the outside of the multiple pins 171.

[0047] Furthermore, on the lower surface of the main body 170, inside the outer rib 172, it has the same height as the pin 171, and the upper wafer W U W on the back U2 An inner rib 173 is provided to support it. The inner rib 173 is provided in an annular shape concentrically with the outer rib 172. The region 174 inside the outer rib 172 (hereinafter sometimes referred to as the suction region 174) is divided into a first suction region 174a inside the inner rib 173 and a second suction region 174b outside the inner rib 173.

[0048] On the lower surface of the main body 170, in the first suction region 174a, the upper wafer W U A first suction port 175a is formed for vacuuming. For example, four first suction ports 175a are formed in the first suction area 174a. A first suction tube 176a, which is provided inside the main body 170, is connected to the first suction port 175a. Furthermore, a first vacuum pump 177a is connected to the first suction tube 176a.

[0049] Furthermore, on the lower surface of the main body 170, in the second suction region 174b, the upper wafer W U A second suction port 175b is formed for vacuuming. The second suction port 175b is formed in two locations, for example, in the second suction region 174b. A second suction tube 176b, which is provided inside the main body 170, is connected to the second suction port 175b. Furthermore, a second vacuum pump 177b is connected to the second suction tube 176b.

[0050] And then, the upper wafer W U The suction regions 174a and 174b, which are formed by being surrounded by the main body 170 and the outer rib 172, are evacuated from the suction ports 175a and 175b, respectively, thereby reducing the pressure in the suction regions 174a and 174b. At this time, the atmosphere outside the suction regions 174a and 174b is atmospheric pressure, so the upper wafer W U The reduced pressure pushes the upper wafer W towards the suction regions 174a and 174b by atmospheric pressure, and the upper wafer W is pushed towards the upper chuck 140. UThe upper wafer W is adsorbed and held. The upper chuck 140 is positioned between the first suction region 174a and the second suction region 174b. U It is configured to allow for vacuum evacuation.

[0051] A through hole 178 is formed in the center of the main body 170 of the upper chuck 140 and in the center of the upper chuck stage 150, penetrating the main body 170 and the upper chuck stage 150 in the thickness direction. The center of the main body 170 is the upper wafer W that is held by the upper chuck 140. U It corresponds to the center of the structure. The tip of the actuator part 181 of the push part 180, which will be described later, is inserted through the through hole 178.

[0052] The upper surface of the upper chuck stage 150 is the upper wafer W U A pressing part 180 is provided to press against the center of the object. The pressing part 180 has an actuator part 181 and a cylinder part 182 as contact members.

[0053] The actuator unit 181 generates a constant pressure in a certain direction using air supplied from an electro-pneumatic regulator (not shown), and can generate a constant pressure regardless of the position of the point of application of the pressure. Then, the actuator unit 181 uses the air from the electro-pneumatic regulator to operate the upper wafer W U The center of the upper wafer W is in contact with the upper wafer W. U The pressing load applied to the center can be controlled. In addition, the tip of the actuator section 181 is able to move up and down vertically by being inserted through the through hole 178 by air from the electro-pneumatic regulator.

[0054] The actuator section 181 is supported by the cylinder section 182. The cylinder section 182 can move the actuator section 181 vertically by a drive unit, for example, which has a built-in motor.

[0055] As described above, the pushing unit 180 controls the pressing load with the actuator unit 181 and controls the movement of the actuator unit 181 with the cylinder unit 182. The pushing unit 180 is then used to press the wafer W, which will be described later. U , W L During bonding, the upper wafer W U The center and lower wafer W L It can be pressed against the center of the object.

[0056] The lower chuck 141 employs a pin chuck system, similar to the upper chuck 140. In a plan view, the lower chuck 141 is located on the lower wafer W L It has a main body portion 190 having a diameter greater than or equal to the diameter of the lower wafer W. L W on the back L2 Multiple pins 191 are provided to contact the lower wafer W. L W on the back L2 An outer rib 192 is provided to support the outer circumference. The outer rib 192 is provided in an annular shape on the outside of the multiple pins 191.

[0057] Furthermore, on the upper surface of the main body 190, inside the outer rib 192, the pin 191 has the same height as the lower wafer W L W on the back L2 An inner rib 193 is provided to support it. The inner rib 193 is provided in an annular shape concentrically with the outer rib 192. The region 194 inside the outer rib 192 (hereinafter sometimes referred to as the suction region 194) is divided into a first suction region 194a inside the inner rib 193 and a second suction region 194b outside the inner rib 193.

[0058] On the upper surface of the main body 190, in the first suction region 194a, the lower wafer W LA first suction port 195a is formed for vacuuming. The first suction port 195a is formed in one location, for example, in the first suction region 194a. A first suction tube 196a, which is provided inside the main body 190, is connected to the first suction port 195a. Furthermore, a first vacuum pump 197a is connected to the first suction tube 196a.

[0059] Furthermore, on the upper surface of the main body 190, in the second suction region 194b, the lower wafer W L A second suction port 195b is formed for vacuuming. The second suction port 195b is formed in two locations, for example, in the second suction region 194b. A second suction tube 196b, which is provided inside the main body 190, is connected to the second suction port 195b. Furthermore, a second vacuum pump 197b is connected to the second suction tube 196b.

[0060] And then, the lower wafer W L The suction regions 194a and 194b, which are formed surrounded by the main body 190 and the outer ribs 192, are evacuated from the suction ports 195a and 195b, respectively, thereby reducing the pressure in the suction regions 194a and 194b. At this time, the atmosphere outside the suction regions 194a and 194b is atmospheric pressure, so the lower wafer W L The reduced pressure pushes the lower wafer W towards the suction regions 194a and 194b by atmospheric pressure, and the lower wafer W is pushed towards the lower chuck 141. L The lower chuck 141 holds the lower wafer W for each of the first suction region 194a and the second suction region 194b. L It is configured to allow for vacuum evacuation.

[0061] In the lower chuck 141, for example, three through holes (not shown) are formed near the center of the main body 190, penetrating the main body 190 in the thickness direction. A lifting pin, located below the first lower chuck moving part 162, is inserted through these through holes.

[0062] The outer periphery of the main body 190 is the wafer W U , W L Polymerized wafer W TGuide members (not shown) are provided to prevent the part from popping out or slipping out of the lower chuck 141. Multiple guide members are provided at equal intervals on the outer circumference of the main body 190, for example, at four locations.

[0063] The operation of each part of the joining device 41 is controlled by the control device 70 described above.

[0064] <Joining method> Next, the bonding of wafer W is performed using the bonding system 1 configured as described above. U , W L The joining method will be explained. Figure 7 is a flowchart showing the main steps of the wafer joining process. Figure 8 is an explanatory diagram showing the main steps of the wafer joining process.

[0065] First, multiple upper wafers W U Cassette C containing U Multiple lower wafers W L Cassette C containing L , and an empty cassette C T However, it is placed on the desired cassette mounting plate 11 of the loading / unloading station 2. Then, the wafer transport device 22 moves the cassette C U Inner upper wafer W U The product is removed and transported to the transition device 50 of the third processing block G3 of processing station 3.

[0066] Next, upper wafer W U The wafer is transported by the wafer transport device 61 to the surface modification device 30 of the first processing block G1. In the surface modification device 30, under a desired reduced pressure atmosphere, the processing gas, oxygen gas or nitrogen gas, is excited, plasma-generated, and ionized. These oxygen ions or nitrogen ions are then used to form the upper wafer W. U Surface W U1 When irradiated, the surface W U1 Then, the upper wafer W is subjected to plasma treatment. U Surface W U1 The material is modified (step S1 in Figure 7).

[0067] Next, upper wafer WU The wafer is then transported by the wafer transport device 61 to the surface hydrophilization device 40 of the second processing block G2. In the surface hydrophilization device 40, the upper wafer W held in the spin chuck is processed. U While rotating the upper wafer W U Pure water is supplied to the top. Then, the supplied pure water goes to the top wafer W U Surface W U1 The upper wafer W is diffused and modified in the surface modification apparatus 30. U Surface W U1 Hydroxyl groups (silanol groups) adhere to the surface W U1 The water becomes hydrophilic. Also, the pure water makes the upper wafer W U Surface W U1 The parts are then cleaned (step S2 in Figure 7).

[0068] Next, upper wafer W U The upper wafer W is transported to the bonding apparatus 41 of the second processing block G2 by the wafer transport apparatus 61. U The upper wafer W is then transported to the position adjustment mechanism 120 by the wafer transport mechanism 111 via the transition 110. U The horizontal orientation is adjusted (step S3 in Figure 7).

[0069] Subsequently, the upper wafer W is transferred from the position adjustment mechanism 120 to the holding arm 131 of the reversal mechanism 130. U The wafer W is then transferred. Next, in the transport area T1, the holding arm 131 is inverted, thereby transferring the upper wafer W U The front and back sides are reversed (step S4 in Figure 7). That is, the upper wafer W U Surface W U1 It is pointed downwards.

[0070] Subsequently, the holding arm 131 of the reversing mechanism 130 rotates around the drive unit 133 and moves below the upper chuck 140. Then, the upper wafer W is transferred from the reversing mechanism 130 to the upper chuck 140. U The wafer is handed over. Upper wafer W U The top zipper is 140 and the back side is W U2The material is adsorbed and held (step S5 in Figure 7). Specifically, vacuum pumps 177a and 177b are activated, and the upper wafer W is drawn through the suction ports 175a and 175b in the suction regions 174a and 174b. U Vacuum is drawn, upper wafer W U It is held in place by suction on the upper chuck 140.

[0071] Upper wafer W U While the processes S1 to S5 described above are being carried out on the upper wafer W U Next, the lower wafer W L The following process is performed. First, the wafer transport device 22 transfers the cassette C L Inside the lower wafer W L The product is removed and transported to the transition device 50 of processing station 3.

[0072] Next, the lower wafer W L The lower wafer W is transported to the surface modification apparatus 30 by the wafer transport apparatus 61. L Surface W L1 The lower wafer W in step S6 is modified (step S6 in Figure 7). L Surface W L1 The modification is the same as in step S1 described above.

[0073] Subsequently, the lower wafer W L The wafer is then transported to the surface hydrophilization device 40 by the wafer transport device 61, and the lower wafer W L Surface W L1 The surface W becomes hydrophilic. L1 The lower wafer W in step S7 is cleaned (step S7 in Figure 7). L Surface W L1 The hydrophilization and cleaning are the same as in step S2 described above.

[0074] Subsequently, the lower wafer W L The lower wafer W is transported to the bonding apparatus 41 by the wafer transport device 61. L The lower wafer W is then transported to the position adjustment mechanism 120 by the wafer transport mechanism 111 via the transition 110. LThe horizontal orientation is adjusted (step S8 in Figure 7).

[0075] Subsequently, the lower wafer W L The wafer is transported to the lower chuck 141 by the wafer transport mechanism 111, and its back surface W is placed on the lower chuck 141. L2 The material is adsorbed and held (step S9 in Figure 7). Specifically, vacuum pumps 197a and 197b are activated, and the lower wafer W is drawn through the suction ports 195a and 195b in the suction regions 194a and 194b. L Vacuum is drawn, and the lower wafer W L It is held in place by the lower chuck 141.

[0076] Next, the upper wafer W held in the upper chuck 140 U and the lower wafer W held in the lower chuck 141 L The horizontal position adjustment is performed. Specifically, the lower chuck 141 is moved horizontally (in the X-axis and Y-axis directions) by the first lower chuck moving unit 164 and the second lower chuck moving unit 166, and the lower wafer W is scanned using the upper imaging unit 151. L Surface W L1 The predetermined reference points above are sequentially imaged. Simultaneously, the upper chuck 140 is moved in the θ-axis direction by the rotating unit 153, and the upper wafer W is imaged using the lower imaging unit 161. U Surface W U1 The predetermined reference points above are sequentially imaged. The captured images are output to the control device 70. The control device 70 uses the images captured by the upper imaging unit 151 and the images captured by the lower imaging unit 161 to process the upper wafer W U Reference point and lower wafer W L The lower chuck 141 is moved by the first lower chuck moving part 164 and the second lower chuck moving part 166 to a position where the reference points of each part coincide, and the upper chuck 140 is rotated by the rotating part 153. In this way, the upper wafer W U and lower wafer W L The horizontal position is adjusted (step S10 in Figure 7).

[0077] Subsequently, the lower chuck 141 is moved vertically upward by the first lower chuck moving part 164 to adjust the vertical position of the upper chuck 140 and the lower chuck 141, and the upper wafer W held in the upper chuck 140 is then moved. U and the lower wafer W held in the lower chuck 141 L The vertical position is adjusted (step S11 in Figure 7). Then, as shown in Figure 8(a), the upper wafer W U and lower wafer W L They are positioned opposite each other in the desired location.

[0078] Next, the upper wafer W held in the upper chuck 140 U and the lower wafer W held in the lower chuck 141 L The joining process is performed.

[0079] First, a downward command is output from the control device 70 to the push unit 180 (step S12 in Figure 7), and the push unit 180 lowers the actuator unit 181 using the cylinder unit 182 based on this downward command. As a result, as the actuator unit 181 lowers, the actuator unit 181 moves to the upper wafer W as shown in Figure 8(b). U W on the back U2 After contacting the center of the upper wafer W (step S13 in Figure 7), it then contacts the upper wafer W U The center is pressed and moves downward (step S14 in Figure 7). Then, as shown in Figure 8(c), the upper wafer W is moved by the pushing part 180. U The center and lower wafer W L The center of is brought into contact and pressed (step S15 in Figure 7). At this time, the operation of the first vacuum pump 177a is stopped, and the upper wafer W from the first suction port 175a in the first suction region 174a is released. U The vacuuming is stopped, and the second vacuum pump 177b is kept running, and the second suction area 174b is vacuumed from the second suction port 175b. Then, the upper wafer W is pushed by the pushing part 180. U When pressing the center of the upper wafer W, the upper chuck 140 also presses the upper wafer W U It can hold the outer periphery.

[0080] Upper wafer W UThe center and lower wafer W L When the center of the wafer is brought into contact and pressed, bonding begins between the centers (thick lines in Figure 8(c)). That is, the upper wafer W U Surface W U1 and lower wafer W L Surface W L1 Since these are modified in processes S1 and S6 respectively, first, surface W U1 , W L1 Van der Waals forces (intermolecular forces) are generated between them, and the surface W U1 , W L1 The two are joined together. Furthermore, the upper wafer W U Surface W U1 and lower wafer W L Surface W L1 Since they are hydrophilized in processes S2 and S7 respectively, surface W U1 , W L1 Hydrophilic groups in between form hydrogen bonds (intermolecular forces), and the surface W U1 , W L1 The two are firmly joined together. And as shown in Figure 8(d), the aforementioned surface W U1 , surface W L1 The joints formed by van der Waals forces and hydrogen bonds diffuse from the center outwards (step S16 in Figure 7).

[0081] Subsequently, as shown in Figure 8(e), the upper wafer W is pushed by the pushing part 180. U The center and lower wafer W L With the center of the second vacuum pump 177b pressed down, the operation of the second vacuum pump 177b is stopped, and the upper wafer W from the second suction port 175b in the second suction region 174b is removed. U Stop the vacuuming. Then the upper wafer W U The outer periphery is the lower wafer W L It falls upwards. Then, as shown in Figure 8(f), the upper wafer W U Surface W U1 and lower wafer W L Surface W L1 It makes full contact with the upper wafer W U and lower wafer W L The parts are joined together (step S17 in Figure 7).

[0082] Subsequently, the actuator 181 of the pushing unit 180 is raised to the upper chuck 140. Also, the operation of the vacuum pumps 197a and 197b is stopped, and the lower wafer W in the suction area 194 L Stop the vacuuming and lower wafer W by lower chuck 141 L Stop the adsorption and retention.

[0083] Upper wafer W U and lower wafer W L Polymerized wafer W T The wafers are then transported to the transition device 51 by the wafer transport device 61, and subsequently to the desired cassette C of the cassette mounting plate 11 by the wafer transport device 22 of the loading / unloading station 2. T They are transported to [location]. In this way, a series of wafers W U , W L The joining process is completed.

[0084] <Method for inspecting the bonded state> Next, a method for inspecting the joining state according to this embodiment will be described. As a result of diligent research, the inventors have found that the state of the joining process can be inspected by monitoring the positional deviation of the upper chuck 140 and the positional deviation of the lower chuck 141.

[0085] (Calculation of positional deviation) Figure 9 is an explanatory diagram of the position deviation of the upper chuck 140 and the position deviation of the lower chuck 141. As described above, in process S10, the lower chuck 141 is moved horizontally by the first lower chuck moving unit 164 and the second lower chuck moving unit 166, and the upper chuck 140 is rotated by the rotating unit 153. In the lower chuck moving unit 164, the command is converted into an electric current in the driver 164a and output to the motor 164b. The motor 164b moves the lower chuck moving unit 164 in the X-axis direction based on this electric current. Similarly, the control device 70 outputs a command to the second lower chuck moving unit 166 that includes the set position in the Y-axis direction of the second lower chuck moving unit 166, and in the second lower chuck moving unit 166, the command is converted into an electric current in the driver 166a and output to the motor 166b. Furthermore, the control device 70 outputs a command to the rotating unit 153 that includes the set position of the rotating unit 153 in the θ-axis direction, and in the rotating unit 153, the command is converted into an electric current by the driver 153a and output to the motor 153b.

[0086] In step S11, the lower chuck 141 is moved vertically upward by the first lower chuck moving unit 164. At this time, the control device 70 outputs a command to the first lower chuck moving unit 164 that includes the set position of the first lower chuck moving unit 164 in the Z-axis direction, and in the first lower chuck moving unit 164, the command is converted into an electric current by the driver 164a and output to the motor 164b.

[0087] In other words, in processes S10 and S11, the control device 70 outputs the set positions in the θ-axis direction, X-axis direction, Y-axis direction, and Z-axis direction to the moving mechanism (rotating part 153, first lower chuck moving part 164, and second lower chuck moving part 166).

[0088] Meanwhile, in processes S12 to S17, the actual position of the upper chuck 140 in the θ-axis direction is measured using the linear scale 154. In addition, the actual position of the lower chuck 141 in the X-axis direction and the Z-axis direction is measured using the first laser interferometer 162, and the actual position of the lower chuck 141 in the Y-axis direction is measured using the second laser interferometer 163. These measured actual positions in the θ-axis, X-axis, Y-axis, and Z-axis directions are output to the control device 70.

[0089] The control device 70 calculates the position deviation (hereinafter referred to as "θ-axis position deviation") which is the difference between the set position and the actual position of the upper chuck 140 in the θ-axis direction. Similarly, it calculates the position deviations (hereinafter referred to as "X-axis position deviation," "Y-axis position deviation," and "Z-axis position deviation," respectively) which are the differences between the set position and the actual position of the lower chuck 141 in the X-axis, Y-axis, and Z-axis directions.

[0090] In this embodiment, the set position of the upper chuck 140 in the θ-axis direction and the set positions of the lower chuck 141 in the X-axis, Y-axis, and Z-axis directions are not changed during the joining process. Therefore, the θ-axis position deviation, X-axis position deviation, Y-axis position deviation, and Z-axis position deviation are substantially synonymous with the actual position of the upper chuck 140 in the θ-axis direction and the actual position of the lower chuck 141 in the X-axis, Y-axis, and Z-axis directions, respectively.

[0091] (Inspection of the joint condition) Next, the control device 70 inspects the joint state based on the calculated θ-axis position deviation, X-axis position deviation, Y-axis position deviation, and Z-axis position deviation. In this embodiment, the joint state of steps S12 to S17 described above is inspected. Figure 10 is a graph showing the change in the θ-axis position deviation of the upper chuck 140 over time. The vertical axis of Figure 10 shows the position deviation of the upper chuck 140, and the horizontal axis shows time (step).

[0092] In step S12, when a downward command is output from the control device 70 to the push unit 180, the θ-axis position deviation is 0 (zero). Furthermore, between the subsequent steps S12 and S13, the actuator unit 181 moves from the standby position to the upper wafer W U W on the back U2 This is the process to reach that point.

[0093] Next, the θ-axis position deviation fluctuates with a waveform having an amplitude of ±D4. The reason the θ-axis position deviation becomes large in this way is that in process S13, the actuator unit 181 moves to the upper wafer W U W on the back U2This is caused by the upper chuck 140 moving due to the impact when it comes into contact with the center of the chuck.

[0094] Next, the θ-axis position deviation fluctuates with a waveform having an amplitude of ±D2. This reduction in the θ-axis position deviation is due to the stabilization of the behavior of the upper chuck 140 in process S13. In other words, in this process in which the θ-axis position deviation fluctuates by ±D2, the actuator unit 181 controls the upper wafer W in process S14. U This corresponds to the process in which the center is pressed and moves downward. In this process S14, the upper wafer W U The center and lower wafer W L The central parts are separated, and air exists between these central parts.

[0095] Next, the θ-axis position deviation fluctuates with a waveform having an amplitude of ±D1. The θ-axis position deviation becomes even smaller in this way because the upper wafer W in process S15. U The center and lower wafer W L The central part of the upper wafer W comes into contact with the upper wafer W, which reduces the fluctuation of the upper wafer W in the above-mentioned step S14. In other words, in the step in which this θ-axis position deviation fluctuates by ±D1, the upper wafer W W U and lower wafer W L This corresponds to a process in which bonding diffuses from the center outwards.

[0096] Next, the θ-axis position deviation changes to -D3. This large θ-axis position deviation occurs in the upper wafer W during process S17. U The lower wafer W L It fell onto the upper wafer W U and lower wafer W L This is due to the fact that the entire surface was joined together.

[0097] According to the above embodiments, the bonding state can be appropriately inspected based on the variation in the θ-axis position deviation.

[0098] For example, the amplitude D2 of the θ-axis position deviation in process S14 is set as the reference value. Also, for example, the threshold for determining the start timing of joining is set to D2-D1. From these reference value and threshold, the amplitude of the θ-axis position deviation when determining the start timing of joining will be less than or equal to D1. In such a case, in the above example, when the amplitude of the θ-axis position deviation becomes D1 in process S15 (i.e., the starting point of process S16), it can be determined that this is the start timing of joining.

[0099] For example, the amplitude D2 of the θ-axis position deviation in process S14 is set as the reference value, and the threshold for determining the completion timing of joining is set to D3-D2. From these reference value and threshold, the amplitude of the θ-axis position deviation when determining the completion timing of joining will be D3 or greater. In such a case, in the above example, when the θ-axis position deviation becomes -D3 in process S17, it can be determined that this is the timing to start joining.

[0100] In this embodiment, the start and end timings of the joining process can be determined. Furthermore, the recipe (processing conditions) for the joining process can be arbitrarily set according to the desired specifications, and these start and end timings of the joining process can be controlled.

[0101] Furthermore, because the bonding condition can be properly inspected, bonding defects can be detected. This makes it possible to improve product yield.

[0102] In this embodiment, the joint state was inspected based on fluctuations in the θ-axis position deviation, but the joint state may also be inspected based on fluctuations in the X-axis, Y-axis, and Z-axis position deviations. The fluctuations in the X-axis, Y-axis, and Z-axis position deviations also have a similar fluctuation trend to the fluctuations in the θ-axis position deviation described above, and the joint state can be appropriately inspected.

[0103] Furthermore, as described above, in this embodiment, the θ-axis position deviation, X-axis position deviation, Y-axis position deviation, and Z-axis position deviation are substantially synonymous with the actual position of the upper chuck 140 in the θ-axis direction, and the actual position of the lower chuck 141 in the X-axis direction, Y-axis direction, and Z-axis direction, respectively. Therefore, the joining state may be inspected based on these actual positions in the θ-axis direction, X-axis direction, Y-axis direction, and Z-axis direction.

[0104] In the embodiments described above, the joint state was inspected based on the θ-axis position deviation, but the inspection index is not limited to this. For example, the derivative of the θ-axis position deviation may be calculated by differentiating the θ-axis position deviation with respect to time. Alternatively, the frequency of the θ-axis position deviation may be calculated by performing a frequency analysis of the θ-axis position deviation, such as a Fast Fourier Transform (FFT).

[0105] For example, if the waveform of the θ-axis position deviation in process S14 is unstable, it may be impossible to set the reference value of the θ-axis position deviation amplitude D2. Also, if the waveform of the θ-axis position deviation in process S16 is unstable, it may be impossible to identify the amplitude D1 of the θ-axis position deviation to be compared. Therefore, in such cases, it is possible to inspect the bonding state by monitoring the differential value or frequency fluctuations of the θ-axis position deviation.

[0106] Similarly, the derivatives and frequencies of the X-axis, Y-axis, and Z-axis position deviations may also be calculated.

[0107] As described above, in addition to θ-axis position deviation, X-axis position deviation, Y-axis position deviation, and Z-axis position deviation, differential values ​​and frequency can also be used as inspection indicators for the joint state. In other words, in this example, a total of 12 inspection indicators can be used: 4 axes (θ-axis, X-axis, Y-axis, Z-axis) × 3 parameters (position deviation, differential value, frequency). Furthermore, one or more of these inspection indicators may be used. When multiple inspection indicators are used, if any one of the multiple inspection indicators shows the variation shown in Figure 10, the joint state can be appropriately inspected.

[0108] In the embodiments described above, the θ-axis position deviation in steps S12 to S17 was monitored to inspect the joining state, but the timing for starting the monitoring of the θ-axis position deviation is not limited to this. For example, in order to determine the start and end timings of the joining process, it is sufficient that the θ-axis position deviation is monitored at least in step S14. In other words, it is not necessary to monitor the θ-axis position deviation up to step S13.

[0109] Since process S12 is a process in which a downward command is output from the control device 70 to the pushing unit 180, the control device 70 is aware of the timing of this command. Therefore, a delay time may be set from process S12, and monitoring of the θ-axis position deviation may be started after the delay time has elapsed. The delay time can be set by pre-measuring the timing when the fluctuation of the θ-axis position deviation in process S13 has stabilized and process S14 has started.

[0110] By setting a delay time in this way to control the start timing of monitoring the θ-axis position deviation, the reference value of the θ-axis position deviation in process S14 can be appropriately set without being affected by large fluctuations in the θ-axis position deviation in process S13. As a result, the bonding state can be properly inspected.

[0111] In the embodiments described above, the joint state was inspected using θ-axis position deviation, X-axis position deviation, Y-axis position deviation, and Z-axis position deviation, as well as the derivatives of these position deviations and frequency. However, the inspection indicators are not limited to these. For example, the joint state may be inspected by measuring the torque of motors 153b, 164b, and 166b. Since the torques of these motors 153b, 164b, and 166b also show a fluctuation trend similar to that shown in Figure 10, the effects of the embodiments described above can be enjoyed.

[0112] In the embodiments described above, a linear scale 154 was used as the measuring unit for measuring the θ-axis position of the upper chuck 140, and laser interferometers 162 and 163 were used as measuring units for measuring the X-axis, Y-axis, and Z-axis positions of the lower chuck 141. However, the measuring units are not limited to these. For example, a vibration meter may be used as the measuring unit. As shown in Figure 10, the θ-axis position deviation exhibits waveform-like behavior over time, so the θ-axis position can be calculated by measuring the θ-axis position of the upper wafer using a vibration meter. Furthermore, the X-axis, Y-axis, and Z-axis positions of the lower chuck 141 can also be measured using a vibration meter, and their position deviations can be calculated.

[0113] In the embodiments described above, the positions of the upper chuck 140 and the lower chuck 141 were measured to inspect the joint state. However, the positions of the surrounding members of the upper chuck 140 and the lower chuck 141 may also be measured. For example, if the positional deviation of the surrounding members of the upper chuck 140 and the lower chuck 141 fluctuates as shown in Figure 10, the joint state can be inspected based on the positional deviation of the surrounding members.

[0114] In the embodiments described above, an example was described in which the upper chuck 140 is positioned above and the lower chuck 141 is positioned below. However, the arrangement of the upper chuck 140 and the lower chuck 141 may be reversed.

[0115] In the above embodiments, the upper chuck 140 was configured to be rotatable, but the lower chuck 141 may be rotatable, or both the upper chuck 140 and the lower chuck 141 may be rotatable. Similarly, in the X-axis, Y-axis, and Z-axis directions, the lower chuck 141 was configured to be movable in the X-axis, Y-axis, and Z-axis directions, but the upper chuck 140 may be movable, or both the upper chuck 140 and the lower chuck 141 may be movable.

[0116] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0117] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or instead of the effects described herein.

[0118] Furthermore, the following configuration examples also fall within the technical scope of this disclosure. (1) A bonding device for joining substrates together, The lower surface has a first holding part that holds the first substrate, A second holding portion is provided below the first holding portion and has an upper surface that holds the second substrate, A contact member that brings the center of the first substrate into contact with the center of the second substrate, A moving mechanism for moving the first holding part and the second holding part relative to each other, A measuring unit for measuring the position of at least one of the first holding portion or the second holding portion, It has a control unit and The control unit, (a) A step of moving the first holding part and the second holding part relative to each other so that the first substrate held by the first holding part and the second substrate held by the second holding part are facing each other, (b) A step of bringing the center of the first substrate into contact with the center of the second substrate, (c) A step of sequentially joining the first substrate and the second substrate, with the center of the first substrate and the center of the second substrate in contact, from the center of the first substrate toward the outer edge, (d) A joining device that controls the first holding part, the second holding part, the contact member, the moving mechanism and the measuring unit to perform the step of measuring the actual position of at least one of the first holding part or the second holding part that was moved in step (a) in at least the step of (c), and inspecting the state of the joining process based on the actual position. (2) The control unit shall (e) The process of outputting the setting position when moving the first holding part and the second holding part relative to each other in the process of (a) above to the moving mechanism, The joining apparatus according to (1), wherein in step (d), the positional deviation between the set position and the actual position is calculated, and the state of the joining process is inspected based on the positional deviation. (3) The joining apparatus according to (2), wherein the control unit calculates a derivative value by differentiating the position deviation with respect to time in step (d), and inspects the state of the joining process based on the position deviation and the derivative value. (4) The bonding apparatus according to (2) or (3), wherein the control unit performs a frequency analysis of the position deviation in step (d) to calculate the frequency and inspects the state of the bonding process based on the position deviation and the frequency. (5) The control unit, The (d) step is performed from before the (b) step to the (c) step, and a reference value is set based on the position deviation before the (b) step. The joining apparatus according to any one of (2) to (4), wherein in step (d), the start timing of step (c) is derived based on the position deviation and the reference value. (6) The control unit shall The (d) step is performed from before the (b) step to the (c) step, and a reference value is set based on the position deviation before the (b) step. The joining apparatus according to any one of (2) to (5), wherein in step (d), the timing of the end of step (c) is derived based on the position deviation and the reference value. (7) The bonding apparatus according to any one of (2) to (6), wherein the control unit starts the (d) step after a predetermined delay time has elapsed since the (e) step. (8) The bonding apparatus according to (7), wherein the control unit sets the delay time based on the variation in the positional deviation when the contact member contacts the center of the first substrate. (9) The joining device according to any one of (1) to (8), wherein the measuring unit measures at least one of the horizontal position of at least one of the first holding part or the second holding part, or the rotational position of at least one of the first holding part or the second holding part. (10) The bonding apparatus according to any one of (1) to (9), wherein the measuring unit includes at least one of a laser interferometer or a linear scale. (11) A joining system equipped with a joining device, A processing station equipped with the aforementioned bonding device, The system is capable of holding multiple first substrates, second substrates, or polymer substrates formed by bonding the first substrate and the second substrate, and includes an loading / unloading station for loading and unloading the first substrates, second substrates, or polymer substrates to and from the processing station. The aforementioned processing station is A surface modification apparatus for modifying the surface to which the first substrate or the second substrate is joined, A surface hydrophilization device that hydrophilizes the surface of the first substrate or the second substrate modified by the surface modification device, The surface modification apparatus, the surface hydrophilization apparatus, and the bonding apparatus are provided with a transport device for transporting a first substrate, a second substrate, or a polymerized substrate. The bonding apparatus bonds a first substrate and a second substrate whose surfaces have been hydrophilized by the surface hydrophilization apparatus. The bonding device is The lower surface has a first holding part that holds the first substrate, A second holding portion is provided below the first holding portion and has an upper surface that holds the second substrate, A contact member that brings the center of the first substrate into contact with the center of the second substrate, A moving mechanism for moving the first holding part and the second holding part relative to each other, A measuring unit for measuring the position of at least one of the first holding portion or the second holding portion, It has a control unit and The control unit, (a) A step of moving the first holding part and the second holding part relative to each other so that the first substrate held by the first holding part and the second substrate held by the second holding part are facing each other, (b) A step of bringing the center of the first substrate into contact with the center of the second substrate, (c) A step of sequentially joining the first substrate and the second substrate, with the center of the first substrate and the center of the second substrate in contact, from the center of the first substrate toward the outer edge, (d) A joining system that controls the first holding part, the second holding part, the contact member, the moving mechanism and the measuring unit to perform the step of measuring the actual position of at least one of the first holding part or the second holding part that was moved in step (a) in at least the step of (c), and inspecting the state of the joining process based on the actual position. (12) A bonding method for joining substrates together, (a) A step of moving the first holding part and the second holding part relative to each other using a moving mechanism, so that the first substrate held on the lower surface of the first holding part and the second substrate held on the upper surface of the second holding part are facing each other, (b) A step of bringing the center of the first substrate and the center of the second substrate into contact with a contact member, (c) A step of sequentially joining the first substrate and the second substrate, with the center of the first substrate and the center of the second substrate in contact, from the center of the first substrate toward the outer edge, (d) A joining method comprising the step of measuring the actual position of at least one of the first holding part or the second holding part that was moved in step (a) in at least the step of (c), and inspecting the state of the joining process based on the actual position. [Explanation of symbols]

[0119] 41 Joining equipment 70 Control device 140 Top zipper 141 Bottom zipper 153 Rotating part 154 Linear Scale 162 First Laser Interferometer 163 Second Laser Interferometer 164 First lower chuck movement section 166 Second lower chuck movement section 181 Actuator section W U Upper wafer W L Lower wafer W T Polymerized wafer

Claims

1. A bonding device for joining substrates together, The lower surface has a first holding part that holds the first substrate, A second holding portion is provided below the first holding portion and has an upper surface that holds the second substrate, A contact member that brings the center of the first substrate and the center of the second substrate into contact, A moving mechanism for moving the first holding part and the second holding part relative to each other, A measuring unit for measuring the position of at least one of the first holding portion or the second holding portion, It has a control unit and The control unit, (a) A step of moving the first holding part and the second holding part relative to each other so that the first substrate held by the first holding part and the second substrate held by the second holding part are facing each other, (b) A step of bringing the center of the first substrate into contact with the center of the second substrate, (c) A step of sequentially joining the first substrate and the second substrate, with the center of the first substrate and the center of the second substrate in contact, from the center of the first substrate toward the outer edge, (d) A joining device that controls the first holding part, the second holding part, the contact member, the moving mechanism and the measuring unit to perform the step of measuring the actual position of at least one of the first holding part or the second holding part that was moved in step (a) in at least the step of (c), and inspecting the state of the joining process based on the actual position.

2. The control unit, (e) The process of outputting the setting position when the first holding part and the second holding part are moved relative to each other in the process of (a) above to the moving mechanism, The joining apparatus according to claim 1, wherein in step (d) above, the positional deviation between the set position and the actual position is calculated, and the state of the joining process is inspected based on the positional deviation.

3. The joining apparatus according to claim 2, wherein the control unit in step (d) calculates a derivative value by taking the time derivative of the position deviation and inspects the state of the joining process based on the position deviation and the derivative value.

4. The bonding apparatus according to claim 2, wherein the control unit performs a frequency analysis of the position deviation in step (d) to calculate the frequency, and inspects the state of the bonding process based on the position deviation and the frequency.

5. The control unit, The (d) step is performed from before the (b) step to the (c) step, and a reference value is set based on the position deviation before the (b) step. The joining apparatus according to claim 2, wherein in step (d), the start timing of step (c) is derived based on the position deviation and the reference value.

6. The control unit, The (d) step is performed from before the (b) step to the (c) step, and a reference value is set based on the position deviation before the (b) step. The joining apparatus according to claim 2, wherein in step (d), the timing of the end of step (c) is derived based on the position deviation and the reference value.

7. The bonding apparatus according to claim 2, wherein the control unit starts step (d) after a predetermined delay time has elapsed since step (e).

8. The bonding apparatus according to claim 7, wherein the control unit sets the delay time based on the variation in the positional deviation when the contact member contacts the center of the first substrate.

9. The joining device according to claim 1, wherein the measuring unit measures at least one of the horizontal position of at least one of the first holding part or the second holding part, or the rotational position of at least one of the first holding part or the second holding part.

10. The bonding apparatus according to claim 1, wherein the measuring unit includes at least one of a laser interferometer or a linear scale.

11. A joining system equipped with a joining device, A processing station equipped with the aforementioned bonding device, The system is capable of holding multiple first substrates, second substrates, or polymerized substrates formed by bonding the first substrate and the second substrate, and includes an loading / unloading station for loading and unloading the first substrates, second substrates, or polymerized substrates to and from the processing station. The aforementioned processing station is A surface modification apparatus for modifying the surface to which the first substrate or the second substrate is joined, A surface hydrophilization device that hydrophilizes the surface of the first substrate or the second substrate modified by the surface modification device, The surface modification apparatus, the surface hydrophilization apparatus, and the bonding apparatus are provided with a transport device for transporting a first substrate, a second substrate, or a polymerized substrate. The bonding apparatus bonds a first substrate and a second substrate whose surfaces have been hydrophilized by the surface hydrophilization apparatus. The bonding device is The lower surface has a first holding part that holds the first substrate, A second holding portion is provided below the first holding portion and has an upper surface that holds the second substrate, A contact member that brings the center of the first substrate and the center of the second substrate into contact, A moving mechanism for moving the first holding part and the second holding part relative to each other, A measuring unit for measuring the position of at least one of the first holding portion or the second holding portion, It has a control unit and The control unit, (a) A step of moving the first holding part and the second holding part relative to each other so that the first substrate held by the first holding part and the second substrate held by the second holding part are facing each other, (b) A step of bringing the center of the first substrate into contact with the center of the second substrate, (c) A step of sequentially joining the first substrate and the second substrate, with the center of the first substrate and the center of the second substrate in contact, from the center of the first substrate toward the outer edge, A joining system that controls the first holding part, the second holding part, the contact member, the moving mechanism and the measuring unit to perform the step of measuring the actual position of at least one of the first holding part or the second holding part that was moved in step (a) in at least the step of (c), and inspecting the state of the joining process based on the actual position.

12. A bonding method for joining substrates together, (a) A step of moving the first holding part and the second holding part relative to each other using a moving mechanism, so that the first substrate held on the lower surface of the first holding part and the second substrate held on the upper surface of the second holding part are facing each other, (b) A step of bringing the center of the first substrate and the center of the second substrate into contact with a contact member, (c) A step of sequentially joining the first substrate and the second substrate, with the center of the first substrate and the center of the second substrate in contact, from the center of the first substrate toward the outer edge, (d) A joining method comprising the step of measuring the actual position of at least one of the first holding part or the second holding part that was moved in step (a) in step (c), and inspecting the state of the joining process based on the actual position.

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