Substrate processing apparatus, substrate processing method, and program

Abstract

To provide a technique of reducing variations of a film thickness formed on a substrate.SOLUTION: A substrate treatment device which performs treatment of a plurality of substrates by transferring the plurality of substrates to a substrate holding tool by a substrate transfer machine and introducing the substrate holding tool into a reaction vessel by a substrate holding tool transfer machine, comprises: a substrate conveyance control unit which decides a placement condition of the substrate holding tool and a placement position of the substrate to the substrate holding tool on the basis of a model created in advance from a film thickness measurement result, a substrate transfer position setting value and a substrate holding tool setting value and performs an operation of the substrate transfer machine; an eccentric state analysis unit which analyzes an eccentric state from a film thickness variation state; a learning function unit which updates the model on the basis of the eccentric state; and an optimization function unit which updates the placement condition of the substrate holding tool and the placement position of the substrate to the substrate holding tool on the basis of the updated model, the substrate transfer position setting value and the substrate holding tool setting value.SELECTED DRAWING: Figure 9

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a program.

Background Art

[0002] In the manufacturing process of semiconductor elements, a substrate is transported into a predetermined chamber of various manufacturing apparatuses such as a film forming apparatus, an etching apparatus, and an inspection apparatus, and processing corresponding to each apparatus is performed on the substrate. The substrate is carried into each apparatus by a transfer arm having a fork and an end effector, and it has been conventionally known that it must be accurately arranged at a predetermined position in the chamber (for example, see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for reducing variations in film thickness formed on a substrate.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, a substrate processing apparatus is provided which transfers a plurality of substrates placed in a storage container to a substrate holder using a substrate transfer machine, introduces the substrate holder into a reaction vessel using a substrate holder transfer machine, and processes the plurality of substrates, the apparatus comprising: a substrate transport control unit which obtains a film thickness measurement result as a processing result for at least one substrate, determines the placement conditions for the substrate holder and the placement position of the substrate on the substrate holder under those placement conditions based on a model, substrate transfer position setting value and substrate holder setting value created in advance from the film thickness measurement result, and operates the substrate transfer machine; an eccentricity state analysis unit which analyzes the eccentricity state from the film thickness variation situation when a new film thickness measurement result is obtained; a learning function unit which updates the model based on the eccentricity state analyzed by the eccentricity state analysis unit; and an optimization function unit which updates the placement conditions for the substrate holder and the placement position of the substrate on the substrate holder under those placement conditions based on the model, substrate transfer position setting value and substrate holder setting value updated by the learning function unit. [Effects of the Invention]

[0006] One aspect of this approach is that it can reduce variations in the film thickness deposited on the substrate. [Brief explanation of the drawing]

[0007] [Figure 1] This is an explanatory cross-sectional view showing a schematic configuration of an example of a heat treatment apparatus. [Figure 2] Figure 1 is an explanatory perspective view showing the operating state of the transfer device in the heat treatment apparatus in relation to the wafer boat. [Figure 3] This figure shows an example of a wafer boat that can be used in a heat treatment apparatus. [Figure 4] This is a diagram illustrating an example of the placement of wafer W. [Figure 5] This diagram illustrates an example of a controlled object and control parameters. [Figure 6] This figure shows an example of a situation where the wafer cannot be transferred to the teaching position. [Figure 7] This is a diagram illustrating an example of an information processing system according to the first embodiment. [Figure 8] This is a hardware configuration diagram of an example of a computer according to the first embodiment. [Figure 9] This is a functional block diagram of an example of an optimization device according to the first embodiment. [Figure 10] This is a flowchart of an example of the model creation process according to the first embodiment. [Figure 11] This diagram illustrates an example of evaluating variations in film thickness. [Figure 12] This figure shows an example of a newly deposited film result that is input into the eccentricity state analysis unit. [Figure 13] This diagram shows an example of a teaching position input to the learning function unit. [Figure 14] This diagram shows an example of constraint conditions input to the optimization function unit. [Figure 15] This is a flowchart illustrating an example of the operation of the optimization device according to the first embodiment. [Figure 16] This figure shows an example of the "residual difference between the current Run's Edge average" for the evaluation function J. [Figure 17] This diagram illustrates an example of a constraint condition. [Figure 18] This figure shows an example of displaying the optimal teaching position and the predicted variation in film thickness when a film is deposited using that optimal teaching position. [Figure 19] This figure shows an example of a situation where the wafer boat is tilted inside the reaction vessel. [Figure 20] This is a functional block diagram of an example of an optimization device according to the second embodiment. [Figure 21] This is a flowchart of an example of the model creation process according to the second embodiment. [Figure 22] This is a flowchart illustrating an example of the operation of the optimization device according to the second embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, embodiments for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are assigned to the same components, and redundant descriptions may be omitted.

[0009] <First Embodiment> [Heat Treatment Apparatus] A heat treatment apparatus to which a program for eliminating eccentricity according to an embodiment of the present disclosure can be preferably applied will be described.

[0010] FIG. 1 is an explanatory cross-sectional view showing an outline of the configuration in an example of a heat treatment apparatus. In this heat treatment apparatus, a straight tubular inner tube 11A extending in the height direction (vertical direction in FIG. 1) with an open upper end, and an outer tube 11B concentrically arranged at a predetermined interval so that a cylindrical space 11C is formed around the inner tube 11A, with a closed upper end, are provided. The reaction vessel (process tube) 11 has a double tube structure. The lower space of the reaction vessel 11 is a loading area where the wafer W, which is a workpiece, is transferred to and from a wafer boat 80 as a workpiece holder to be described later. The inner tube 11A and the outer tube 11B are both formed of a material excellent in heat resistance and corrosion resistance, for example, high-purity quartz glass.

[0011] At the lower end of the outer tube 11B in the reaction vessel 11, a short cylindrical manifold 12 having a flange portion 12A at the upper end is provided. The flange portion 12A is joined to a lower end flange portion 111 provided at the lower end of the outer tube 11B via a sealing means (not shown) such as an O-ring, etc., so that the outer tube 11B of the reaction vessel 11 is in an airtight fixed state. The inner tube 11A in the reaction vessel 11 extends below the lower end surface of the outer tube 11B and is supported by an annular inner tube support portion 14 provided on the inner surface of the manifold 12 in a state of being inserted into the manifold 12.

[0012] In a longitudinal cross-section of the reaction vessel 11 of this heat treatment apparatus, a gas supply pipe 15A for introducing a processing gas into the reaction vessel 11 and a gas supply pipe 15B for introducing an inert gas are provided on one side wall of the manifold 12, airtightly penetrating the side wall of the manifold 12 and extending upward inside the inner pipe 11A. A gas supply source (not shown) is connected to each of the gas supply pipes 15A and 15B.

[0013] Furthermore, an exhaust pipe 16 for exhausting the reaction vessel 11 is provided on the other side wall of the manifold 12, communicating with the cylindrical space 11C between the inner pipe 11A and the outer pipe 11B. An exhaust mechanism (not shown) having, for example, a vacuum pump and a pressure control mechanism is connected to this exhaust pipe 16, thereby controlling the pressure inside the reaction vessel 11 to a predetermined level.

[0014] Below the reaction vessel 11, there is a lifting mechanism (not shown) that is driven vertically to load and unload wafer boats 80 into and out of the reaction vessel 11. This lifting mechanism includes a disc-shaped lid 20 that opens and closes the lower end opening 11D of the reaction vessel 11. A rotary drive means 23 is provided at the lower part of the lid 20, with its rotary drive shaft 23A airtightly penetrating the lid 20. This rotary drive shaft 23A is connected to the lower surface of a heat-insulating cylinder (insulating body) 24.

[0015] The wafer boat 80 is made of, for example, high-purity quartz glass, and as shown in Figure 2, multiple disc-shaped wafers W, for example 100 to 150 wafers, are held horizontally in multiple stages vertically at predetermined intervals (pitches) within a range of, for example, 4 to 20 mm. Workpiece holding parts, such as grooves for holding workpieces, are formed on the support columns 83, and the wafers W are transferred by the transfer device 30 when the lid 20 is in the lowest position.

[0016] The transfer device 30 is equipped with a long, slender rectangular transfer head 32 that moves up and down and is rotatable around a vertically extending rotation axis 31. For example, 1 to 5 thin plate fork-shaped support arms 33 are provided on the transfer head 32 so as to be able to move back and forth along the length of the transfer head 32. The operation of the transfer device 30, specifically the up-and-down movement and rotational movement of the transfer head 32, and the forward and backward movement of the support arms 33, is controlled by a control device (not shown).

[0017] Outside the reaction vessel 11, a cylindrical heater 25 is installed surrounding the reaction vessel 11 as a heating means for heating the wafer W contained within the reaction vessel 11. The cylindrical heater 25 is provided with a cylindrical insulating material (not shown) on which linear resistance heating elements are arranged spirally or meanderingly on its inner surface. These resistance heating elements are connected to a control device that controls the amount of power to be supplied so that the wafer W reaches a preset temperature state.

[0018] As shown in Figure 1, for example, this cylindrical heater 25 divides the reaction vessel 11 into multiple heating regions (zones) Z1 to Z5 in the height direction, and in the illustrated example, it is possible to independently control the temperature of each heating region Z1 to Z5, that is, to enable zone control.

[0019] Here is an example of the processing conditions for the film deposition process performed on a wafer W. For example, for a wafer W with a diameter of 300 mm, the processing temperature at which the wafer W is to be processed is 400 to 700°C, and the pressure inside the reaction vessel 11 is 13 to 170 Pa (0.1 to 1.3 Torr).

[0020] In the heat treatment apparatus having the above configuration, as will be explained in detail below, when the wafer W is actually subjected to a film deposition process and the deposited wafer W has low in-plane uniformity of the film on its surface, a transfer position optimization operation is performed to optimize the transfer position of the new wafer W to the wafer boat 80, and thereafter, the film deposition process is performed again on the new wafer W under the same processing conditions.

[0021] Specifically, first, the vertical and rotational movement of the transfer head 32, as well as the forward and backward movement of the support arm 33, are controlled, so that wafers W are removed from a storage container containing a large number of wafers W that have been transported by an appropriate transport means (not shown), and are sequentially transferred to a wafer boat 80 waiting on the lid 20 when the lid 20 is in its lowest position. Here, the transfer position to which the wafer W is transferred in each of the workpiece holding sections of the wafer boat 80 is, for example, a position where the shape center position of the wafer W coincides with the rotation center position of the wafer boat 80 which is rotationally driven by the rotational drive means 23 (hereinafter referred to as the "set transfer position"). In addition, for example, simulated semiconductor wafers (dummy wafers) are placed in the uppermost and lowermost workpiece holding sections of the wafer boat 80.

[0022] Then, the lifting mechanism drives the lid 20 upward so that the wafer boat 80 is carried into the reaction vessel 11 through the lower end opening 11D, and the lid 20 seals the lower end opening 11D of the reaction vessel 11 tightly. After this, the exhaust means is activated to reduce the pressure inside the reaction vessel 11 to a predetermined level, and the cylindrical heater 25 is activated so that each heating region Z1 to Z5 in the reaction vessel 11 is heated to the target temperature at which the wafer W is to be processed. In this state, an appropriate film-forming gas is introduced into the reaction vessel 11 from the gas supply pipe 15A so that the wafer W is to be formed. The control unit 140 is a calculation processing unit for controlling the operation of the entire heat treatment apparatus, and may be composed of a computer, for example.

[0023] Next, an example of a wafer boat 80 used in a heat treatment apparatus will be described using Figure 3. Figure 3 is a diagram showing an example of a wafer boat 80 that can be used in a heat treatment apparatus.

[0024] As shown in Figure 3, the wafer boat 80 comprises a top plate 81 and a bottom plate 82, with support columns 83 between the top plate 81 and the bottom plate 82. Figure 3 shows an example with three support columns 83. The number of support columns 83 can be set in various ways depending on the application, as long as there are three or more; for example, it is possible to have four.

[0025] Each support column 83 has a support portion 84 formed vertically at predetermined intervals. The support portion 84 is small and flat, protruding inward like a claw, and may therefore be called a claw. The spacing of the support portions 84 can be set appropriately depending on the application, but for example, as described above, it may be set to a spacing that allows 50 to 150 wafers W to be arranged on one wafer boat 80. The shape of the support portion 84 is not limited as long as it can support the wafer W, but for example, it may be formed in a rectangular shape with a horizontal plane extending towards the center. In addition, the support portions 84 of each support column 83 are set to the same height so that the wafer W can be supported in a horizontal position, and the support portions 84 supporting the same wafer W are set to the same height. Furthermore, if there are three support columns 83, one support column 83a is positioned at the back center when viewed from the front where the wafer W is mounted, and the other two support columns 83b and 83c are positioned symmetrically with respect to support column 83a.

[0026] The top plate 81 and bottom plate 82 may be formed in an annular shape with openings 81a and 82a in the central region, respectively. In addition to the support columns 83, the wafer boat 80 may also be provided with reinforcing columns as needed. The reinforcing columns are support columns provided for reinforcement to increase the strength of the wafer boat 80 and do not have support parts 84 that support the wafer W. For example, one reinforcing column may be provided between the central rear support column 83a and the left support column 83b, and between the central rear support column 83a and the right support column 83c. The wafer boat 80 may be made of various materials depending on the application, including quartz, which is the same material as the wafer boat support base.

[0027] In a heat treatment apparatus with the above configuration, when performing film deposition, the wafer W is transferred to the wafer boat 80 placed on the lid 20 using the transfer device 30, and the lid 20 is raised to house the wafer in the reaction vessel 11. Then, the exhaust means is activated to reduce the pressure inside the reaction vessel 11 to a predetermined level, and the cylindrical heater 25 is activated to heat each heating region Z1 to Z5 in the reaction vessel 11 to the target temperature to which the wafer W is to be processed. In this state, an appropriate film deposition gas is introduced into the reaction vessel 11 from the gas supply pipe 15A, and the film deposition process is performed on the wafer W.

[0028] Here, the gas supply pipe 15A is installed outside the wafer W, and the distance from the gas supply pipe 15A varies depending on the position within the plane of the wafer W. Furthermore, since the wafers W are stacked vertically, there may be differences in the amount of processing gas adsorbed onto the wafer W both within the plane and between the top and bottom of the wafer W. Similarly, with regard to exhaust, subtle differences may occur both within the plane and between the top and bottom of the wafer W.

[0029] Due to these differences, when a thin film is deposited on wafer W, differences in film thickness may occur within the plane of wafer W, including differences in position in the longitudinal direction of wafer W. It is preferable that the film thickness of the thin film deposited on wafer W be uniform within the plane of wafer W, and good in-plane uniformity is desirable. Hereinafter, the uneven distribution of film thickness within the plane of wafer W (e.g., at the edges), caused by the position of wafer W placed on the wafer boat 80, will be referred to as eccentricity. To maximize process performance, it was necessary to eliminate eccentricity.

[0030] Traditionally, eccentricity was corrected by operators adjusting the position of the wafer W on the wafer boat 80 based on their experience and intuition. However, there were no indicators for how much eccentricity should be corrected, and operators had to make adjustments through trial and error until they determined the optimal position was found. As a result, correcting eccentricity was a task that depended on the operator's skill, and the time required to correct it varied from operator to operator. In this embodiment, by using a program to eliminate eccentricity, as described later, eccentricity can be easily eliminated in a short time, regardless of the operator.

[0031] The program for eliminating eccentricity according to this embodiment optimizes the wafer placement position (teaching position) instructed to the transfer device 30, as described below. The transfer device 30 places the wafer W on the support portion 84 of the wafer boat 80 by gradually shifting the support arm 33 in the front-rear and rotational directions according to the instructed teaching position.

[0032] Figure 4 is a diagram illustrating an example of the placement of wafers W. Figure 4 shows an example where teaching positions TP1 to TP5 are assigned to five setting locations (five wafers W). Also, in Figure 4, the wafer boat 80 is omitted, and an example of the placement of wafers W inside the reaction vessel 11 is shown.

[0033] The teaching position, for example, when multiple wafers W are stacked and heat-treated in one batch, indicates the placement position of the center of each wafer W located at multiple designated points in the vertical direction. The number of designated points for indicating the teaching position is not particularly limited as long as there are multiple points, but for example, it can be 2 to 5. For example, Figure 4 shows an example where teaching positions are indicated for 5 wafers W out of 56 stacked wafers W.

[0034] Furthermore, the center positions of wafers W other than the wafer W to which the teaching position is indicated are linearly interpolated using the center positions of the upper and lower wafers W to which the teaching position is indicated. The teaching position is indicated by the amount of movement of the support arm 33 in the front-rear direction and the amount of movement in the rotational direction from the base position.

[0035] As a result, the support arm 33 can be positioned on the support part 84 by slightly shifting it in the front-rear and rotational directions from the base position of the wafer boat 80. In this embodiment, the position of the wafer W placed on the wafer boat 80 can be moved in various ways from the base position by instructing the teaching position of five setting locations, and the film deposition process can be performed.

[0036] Furthermore, Figure 4 shows the setup of monitor wafers M1 to M7 for measuring film thickness. Any number of monitor wafers M1 to M7 can be set within the section defined above and below the setting location indicated by teaching positions TP1 to TP5.

[0037] Figure 4 shows an example in which two monitor wafers M1, M2, M3, M4, M6, and M7 are placed in three sections: from the setting location designated for teaching position TP1 to the setting location designated for teaching position TP2, from the setting location designated for teaching position TP2 to the setting location designated for teaching position TP3, and from the setting location designated for teaching position TP4 to the setting location designated for teaching position TP5. In addition, one monitor wafer M5 is placed in one section: from the setting location designated for teaching position TP3 to the setting location designated for teaching position TP4.

[0038] This setup is merely an example; fewer wafers W may be set as monitor wafers (three wafers), and the number of wafers can be determined according to the application. Furthermore, the locations where teaching positions TP1-TP5 are indicated may or may not coincide with the monitor wafers M1-M7. In Figure 4, an example is shown where the wafers W at the locations where teaching positions TP1-TP5 are indicated are all different from the monitor wafers M1-M7.

[0039] Figure 5 illustrates an example of a controlled object and control parameters. Figure 5(a) shows an example of the vertical positional relationship between wafer W, where teaching positions TP1 to TP5 are specified, and monitor wafers M1 to M7. Note that Figure 5(a) shows the same positional relationship as Figure 4, but since all teaching positions TP1 to TP5 are specified at the base position, all of the multiple wafers W are placed at the same base position.

[0040] Figure 5(b) shows an example of control parameters. There are two settings for the control parameters: the longitudinal direction of the support arm 33 (hereinafter sometimes abbreviated as "FB") and the rotational direction (hereinafter sometimes abbreviated as "RT").

[0041] The forward / backward direction may be indicated as positive for movement towards the back (position shift) and negative for movement towards the front. The rotational direction is indicated by the rotation angle of the support arm 33. For example, right rotation may be indicated as positive and left rotation as negative.

[0042] There are two control parameter settings, FB and RT. If there are 2 to 5 setting locations for teaching positions, then at least 2 x 2 = 4 control conditions can be set, and up to 2 x 5 = 10 control conditions can be set. These configurable control conditions are sometimes called control knobs. The number of control knobs represents the number of control conditions that can be changed.

[0043] Figure 5(c) shows an example of monitoring locations on a monitor wafer. The monitoring locations MP can be set at any position on the surface of the wafer W, but for example, they may be arranged along the circumferential direction in the area near the outer edge of the wafer W. Figure 5(c) shows an example in which 24 monitoring locations MP1 to MP24 are installed.

[0044] To understand in-plane uniformity, it is effective to measure the film thickness balance at the edges of the wafer W. By setting 24 monitor points MP (film thickness measurement points), it is possible to set as many control targets as there are monitor wafers. For example, as shown in Figure 5(a), if 7 wafers W are set as monitor wafers M1 to M7, 24 points × 7 wafers = 168 control targets can be set.

[0045] Furthermore, if 13 monitor wafers M1 to M13 are set, 24 points × 13 wafers = 312 control targets can be set. The reason these are called control targets is that by controlling the film thickness to reduce variations at the monitor point MP, the objective of film thickness control to improve in-plane uniformity is achieved.

[0046] Incidentally, there are cases where the wafer W cannot be transferred to the wafer boat 80 if the optimized teaching position is followed. The wafer W is transferred to the workpiece holding section of the wafer boat 80, which is brought into the reaction vessel 11. However, depending on the placement position of the wafer boat 80 within the reaction vessel 11 (hereinafter also referred to as the "wafer boat placement position"), attempting to transfer the wafer W to the optimized teaching position may result in it not fitting within the range of the workpiece holding section. On the other hand, if the teaching position is optimized within the range where the wafer can be transferred to the workpiece holding section, taking the wafer boat placement position into consideration, the amount of eccentricity improvement is limited.

[0047] Figure 6 shows an example of a case where the wafer cannot be transferred to the teaching position. In the example in Figure 6, the wafer boat 80 is positioned in the reaction vessel 11, shifted towards the upper right. In this case, if the distance D1 between the center position CP of the wafer W and the optimized teaching position TP is greater than the distance D2 that the wafer W can move within the wafer boat 80, the wafer W cannot be transferred according to the teaching position TP.

[0048] On the other hand, by changing the wafer boat mounting position, it may be possible to transfer the wafer W according to the optimized teaching position TP. In the example in Figure 6, if the sum of the distance D3 that the wafer boat 80 can move within the reaction vessel 11 and the distance D2 that the wafer W can move within the wafer boat 80 is greater than the distance D1 between the center position CP of the wafer W and the teaching position TP, then by changing the wafer boat mounting position, it is possible to transfer the wafer W according to the teaching position TP.

[0049] The program for eliminating eccentricity according to this embodiment optimizes the wafer boat placement position in addition to the teaching position. If the optimized teaching position exceeds the adjustable range of the teaching position, the program for eliminating eccentricity outputs the optimized wafer boat placement position. The operator can improve the eccentricity by adjusting the placement position of the wafer boat 80 in the reaction vessel 11 according to the outputted wafer boat placement position. If the heat treatment apparatus is capable of automatically adjusting the placement position of the wafer boat 80, the placement position of the wafer boat 80 in the reaction vessel 11 may be automatically adjusted according to the outputted wafer boat placement position.

[0050] [An information processing system that runs a program to eliminate eccentricity] Figure 7 is a diagram illustrating an example of an information processing system according to this embodiment. In the information processing system shown in Figure 7, the heat treatment apparatus 200, the film thickness measuring apparatus 210, and the optimization apparatus 220 are connected to each other via a communication network N such as the Internet or a LAN, enabling data communication. Note that the information processing system in Figure 7 is just an example, and data may be transferred via a recording medium such as a USB instead of the communication network N.

[0051] As explained with reference to Figures 1 to 5, the heat treatment apparatus 200 transfers the wafer W to the wafer boat 80 using the transfer device 30, places the wafer boat 80 with the wafer W on it inside the reaction vessel 11, and performs film deposition on the wafer W. The teaching position instructed to the transfer device 30 for transferring the deposited wafer W to the wafer boat 80 is automatically input to the optimization device 220 or according to the operator's input. Furthermore, the wafer boat placement position in which the wafer boat 80 is placed inside the reaction vessel 11 is automatically input to the optimization device 220 or according to the operator's input.

[0052] The wafer boat placement position is the coordinate of the center point of the wafer boat 80 when the reaction vessel 11 is viewed from above. Any coordinate system can be used to represent the wafer boat placement position. For example, a rotational coordinate system can be used, with the center point of the reaction vessel 11 as the origin, and the position can be expressed as an angle and distance to the center point of the wafer boat 80. Alternatively, for example, a Cartesian coordinate system can be used, with the center point of the reaction vessel 11 as the origin, and the position can be expressed as the vertical and horizontal distances to the center point of the wafer boat 80.

[0053] The film thickness measuring device 210 measures the film thickness at the monitoring points MP1 to MP24 of the monitor wafers M1 to M7 shown in Figure 5(c) on the wafer W that has been deposited in the heat treatment device 200. The film thickness measurement results for the monitoring points MP1 to MP24 of the monitor wafers M1 to M7 by the film thickness measuring device 210 are input to the optimization device 220 automatically or according to the operator's instructions.

[0054] The optimization device 220 is an information processing device on which a program for eliminating eccentricity according to this embodiment is executed. The optimization device 220 uses a pre-created model (described later), input film thickness measurement results, input wafer boat mounting position, and input teaching position to calculate the wafer boat mounting position where the effect of eccentricity is expected to be minimized, as described later, and the teaching position at that wafer boat mounting position where the effect of eccentricity is expected to be minimized.

[0055] The optimization device 220 may display to the operator the wafer boat mounting position where the calculated eccentricity effect is expected to be minimized, the teaching position at that wafer boat mounting position where the eccentricity effect is expected to be minimized, and the degree of eccentricity improvement when film is deposited using that teaching position. Note that the information processing system in Figure 7 is an example, and the heat treatment device 200 and the optimization device 220 may be integrated. Alternatively, the optimization device 220 may be an information processing system functionally divided into multiple devices.

[0056] [Hardware configuration] The optimization device 220 in Figure 7 is implemented by a computer with the hardware configuration shown in Figure 8, for example. Figure 8 is a hardware configuration diagram of an example of a computer according to this embodiment.

[0057] The computer in Figure 8 is equipped with an input device 501, an output device 502, an external interface 503, RAM 504, ROM 505, a CPU 506, a communication interface 507, and an HDD 508, all of which are interconnected via bus B. The input device 501 and output device 502 may be connected and used only when necessary.

[0058] The input device 501 includes a touch panel, operation keys and buttons, a keyboard, and a mouse used for input. The output device 502 consists of a display such as an LCD or OLED that displays the screen, and a speaker that outputs sound data such as voice and music. The communication I / F 507 is an interface that connects the computer to the communication network N. The HDD 508 is an example of a non-volatile storage device that stores programs and data. Alternatively, a drive device using flash memory (e.g., a solid-state drive: SSD) may be used instead of the HDD 508.

[0059] External I / F 503 is an interface to external devices. External devices include recording media 503a. This allows the computer to read from and / or write to the recording media 503a via External I / F 503. Recording media 503a include flexible disks, CDs, DVDs, SD memory cards, USB memory sticks, etc.

[0060] ROM 505 is an example of a non-volatile semiconductor memory (storage device) that can retain programs and data even when the power is turned off. RAM 504 is an example of a volatile semiconductor memory (storage device) that temporarily holds programs and data. CPU 506 is an arithmetic unit that controls and realizes the functions of the entire computer by reading programs and data from storage devices such as ROM 505 and HDD 508 onto RAM 504 and executing processing. The optimization device 220 according to this embodiment can realize the various processes shown in this embodiment by, for example, executing a program to eliminate eccentricity according to this embodiment in a computer with the above-described hardware configuration.

[0061] Note that the computer hardware configuration shown in Figure 8 is just one example; it could also be a smartphone, tablet device, or a distributed processing system using multiple computers.

[0062] [Function Block] Next, the functional blocks of the optimization device 220 according to this embodiment will be described. Figure 9 is a functional block diagram of an example of the optimization device according to this embodiment. The optimization device 220 implements the model creation unit 222, model storage unit 224, eccentricity state analysis unit 226, learning function unit 228, optimization function unit 230, and constraint condition storage unit 232 by executing the program to eliminate eccentricity according to this embodiment.

[0063] The model creation unit 222 receives the results of pre-deposition (results of multiple runs) as model data using multiple control knobs. The model data includes the film thickness at monitoring points MP1 to MP24 of the monitor wafer for each run, the teaching position, and the wafer boat mounting position. The model creation unit 222 uses the model data to create a model. The created model is a mathematical representation of how the eccentricity changes with changes in the wafer boat mounting position and teaching position. The model storage unit 224 stores the model.

[0064] The eccentricity analysis unit 226 receives the newly deposited film results as input. The film deposition results include the film thickness measurement results for monitoring points MP1 to MP24 on the monitor wafer. The eccentricity analysis unit 226 analyzes the eccentricity state by evaluating the variation in film thickness at the input monitoring points MP1 to MP24.

[0065] The learning function unit 228 provides a learning function. The learning function unit 228 receives the film deposition results and analysis results input from the eccentricity state analysis unit 226, the teaching position corresponding to the film deposition results and analysis results (an example of a "substrate transfer position setting value"), the wafer boat mounting position corresponding to the film deposition results and analysis results (an example of a "substrate holder setting value" in this embodiment), and the model stored in the model storage unit 224 as input, and performs learning. More specifically, the learning function unit 228 uses the film deposition results and analysis results input from the eccentricity state analysis unit 226, the teaching position corresponding to the film deposition results and analysis results, and the wafer boat mounting position corresponding to the film deposition results and analysis results to check if there are any errors in the model stored in the model storage unit 224. If there are errors, the learning function unit 228 corrects the model.

[0066] The constraint memory unit 232 stores the adjustable range of the teaching position as a constraint. When the optimization function unit 230 receives the model corrected by the learning function unit 228 and the constraint, it performs an optimization calculation to determine the optimal wafer boat mounting position where the effect of eccentricity is predicted to be minimized, and the optimal teaching position at that wafer boat mounting position. If the calculated optimal teaching position is within the range of the constraint, the optimization function unit 230 outputs that teaching position. If the calculated optimal teaching position is outside the range of the constraint, the optimization function unit 230 outputs the calculated optimal wafer boat mounting position and the teaching position at that wafer boat mounting position.

[0067] Furthermore, when the optimization device 220 outputs the calculated optimal wafer boat mounting position and the optimal teaching position at that wafer boat mounting position, it displays the degree of eccentricity improvement (amount of improvement) that will be achieved when film deposition is performed using that wafer boat mounting position and teaching position in a diagram or table. Therefore, the operator can check the amount of eccentricity improvement and decide whether to continue using the current wafer boat mounting position and teaching position or to use the newly calculated optimal wafer boat mounting position and teaching position.

[0068] [process] The processing of the optimization apparatus 220 according to this embodiment will be described in detail below.

[0069] Figure 10 is a flowchart of an example of the model creation process according to this embodiment. In step S100, the model creation unit 222 receives the results of multiple runs as model data. The model data includes the film thickness of the monitor locations MP1 to MP24 on the monitor wafer for each run, the teaching position, and the wafer boat mounting position.

[0070] In step S102, the model creation unit 222 has the eccentricity state analysis unit 226 analyze the film thickness variation for each run. Figure 11 is a diagram illustrating an example of film thickness variation evaluation. Film thickness variation is evaluated by calculating the average film thickness of the monitor locations MP1 to MP24 on the monitor wafer and treating the film thickness variation of the monitor locations MP1 to MP24 as a ratio to the average. By doing so, even if the overall average film thickness changes due to changes in control conditions such as film deposition temperature and film deposition time, the film thickness variation can be evaluated using the same standard.

[0071] In step S104, the model creation unit 222 creates a regression equation for each measurement point, which is the monitoring location MP1 to MP24, that evaluates the variation in film thickness with respect to the amount of movement from the base position.

[0072] In step S106, the model creation unit 222 creates a regression model using the created regression equation. In step S108, the model creation unit 222 outputs the created model.

[0073] <Operation> The eccentricity state analysis unit 226 receives newly deposited film results, such as those shown in Figure 12. Figure 12 is a diagram showing an example of newly deposited film results input to the eccentricity state analysis unit. In Figure 12, the monitoring points MP1 to MP24 are indicated by measurement point numbers "1" to "24". Also, Figure 12 shows an example where five wafers W are monitor wafers. The eccentricity state analysis unit 226 receives the film thickness of the monitoring points MP1 to MP24 for each monitor wafer.

[0074] The learning function unit 228 receives, for example, the teaching position shown in Figure 13. Figure 13 is a diagram showing an example of a teaching position input to the learning function unit. The optimization function unit 230 receives, for example, the adjustable range of the teaching position as a constraint condition, as shown in Figure 14. Figure 14 is a diagram showing an example of a constraint condition input to the optimization function unit.

[0075] The optimization apparatus 220 according to this embodiment is operated as shown in Figure 15, utilizing the created model, the newly deposited film result, the teaching position, the wafer boat mounting position, and the constraints. Figure 15 is a flowchart of an example of the operation of the optimization apparatus according to this embodiment.

[0076] In step S200, the optimization device 220 verifies the initial calculation. If it is the initial calculation, it proceeds to step S202, where the optimization device 220 sets the execution count to "1", initializes the necessary variables, and then performs the process in step S206. If it is not the initial calculation, the optimization device 220 proceeds to step S204, adds "1" to the execution count, and then performs the process in step S206.

[0077] In step S206, the eccentricity state analysis unit 226 receives the newly deposited film result, for example, as shown in Figure 12. Proceeding to step S208, the eccentricity state analysis unit 226 evaluates the variation in the film thickness of the current run from the newly deposited film result, for example, as shown in Figure 11. Proceeding to step S210, the learning function unit 228 receives the model stored in the model storage unit 224.

[0078] Proceeding to step S212, the learning function unit 228 uses the film deposition results and analysis results input from the eccentricity state analysis unit 226, the teaching position corresponding to the film deposition results and analysis results, the wafer boat mounting position corresponding to the film deposition results and analysis results, and the model input in step S210 to check if there are any errors in the model stored in the model storage unit 224. If there are errors, the learning function unit 228 corrects the model.

[0079] Proceeding to step S214, the optimization function unit 230, upon receiving the model and constraints corrected by the learning function unit 228, creates an evaluation function J as shown below and performs an optimization calculation to find the combination that minimizes the evaluation function J.

[0080]

number

[0081] The "residual with the edge average of the current run" in evaluation function J is the residual between the average film thickness of the current run and the film thickness at the monitored locations MP1 to MP24, as shown in Figure 16. The "model" in evaluation function J is the model stored in the model storage unit 224. The "movement change" in evaluation function J represents the movement amount of RT, FB, and wafer board to be set for the next run. Figure 16 shows an example of the "residual with the edge average of the current run" in evaluation function J.

[0082] The optimization function unit 230 finds the combination that minimizes the evaluation function J. If the found combination is within the range that satisfies the constraints, the optimization function unit 230 instructs the transfer device 30 to use the amount of movement change in that combination as the optimal teaching position at the current wafer boat mounting position. The transfer device 30 places the wafer W on the support part 84 of the wafer boat 80 according to the instructed teaching position. On the other hand, if the found combination is within the range that does not satisfy the constraints, the optimization function unit 230 outputs the amount of movement change in that combination as the optimal wafer boat mounting position and the teaching position at that wafer boat mounting position.

[0083] In this way, the optimization function unit 230 performs optimization calculations to determine the optimal wafer boat mounting position and the optimal teaching position at that wafer boat mounting position, which are predicted to minimize the effect of eccentricity. Proceeding to step S216, the optimization function unit 230 predicts the variation in film thickness when a film is deposited using the calculated optimal wafer boat mounting position and the optimal teaching position at that wafer boat mounting position.

[0084] The process proceeds to step S218. The optimization function unit 230 may display the optimal wafer boat mounting position, the optimal teaching position at that optimal wafer boat mounting position, and the predicted results of the film thickness variation when a film is deposited using that optimal teaching position in a diagram or table, for example as shown in Figure 18, or it may output them in the data format of a spreadsheet application.

[0085] <Second Embodiment> The wafer boat 80 has a long, cylindrical shape and can reach a height of several meters. Therefore, it is difficult to position the wafer boat 80 so that its axis of rotation is perfectly vertical. Also, because the wafer boat 80 is heavy, its axis of rotation may be distorted from side to side. Figure 19 shows an example of a case where the axis of rotation of the wafer boat is tilted inside the reaction vessel. As shown in Figure 19, the central axis A2 of the wafer boat 80 may be misaligned with respect to the central axis A1 of the reaction vessel 11. Hereafter, the angle θ between the central axis A1 of the reaction vessel 11 and the central axis A2 of the wafer boat 80 will also be called the wafer boat tilt angle.

[0086] If the wafer boat 80 is tilted within the reaction vessel 11, and the wafers W transferred into the wafer boat 80 are not placed horizontally, the eccentricity of the wafers W transferred to the top and bottom of the wafer boat 80 may differ. In such cases, even with an optimized teaching position, the amount of improvement will differ between the wafers W transferred to the top and bottom of the wafer boat 80. If this difference in improvement is large, there will be a limit to the overall improvement of the wafer boat 80.

[0087] The program for eliminating eccentricity according to this embodiment optimizes the tilt of the rotation axis of the wafer boat 80 (hereinafter also referred to as the "wafer boat tilt angle"). The operator can improve the eccentricity by adjusting the tilt of the rotation axis of the wafer boat 80 inside the reaction vessel 11 according to the outputted wafer boat tilt angle. If the heat treatment apparatus is capable of automatically adjusting the tilt of the rotation axis of the wafer boat 80, the tilt of the rotation axis of the wafer boat 80 inside the reaction vessel 11 may be automatically adjusted according to the outputted wafer boat tilt angle.

[0088] [An information processing system that runs a program to eliminate eccentricity] The optimization apparatus 220 according to this embodiment is an information processing device on which a program for eliminating eccentricity according to this embodiment is executed. The optimization apparatus 220 according to this embodiment uses a model created in advance (described later), input film thickness measurement results, and input wafer boat tilt angle to calculate the wafer boat tilt angle that is expected to minimize the effect of eccentricity, as described later.

[0089] The optimization apparatus 220 according to this embodiment may display to the operator the wafer boat tilt angle at which the calculated eccentricity effect is expected to be reduced the most, and the degree of eccentricity improvement when a film is deposited using that wafer boat tilt angle.

[0090] [Function Block] Next, the functional blocks of the optimization device 220 according to this embodiment will be described. Figure 20 is a functional block diagram of an example of the optimization device according to this embodiment. The optimization device 220 according to this embodiment realizes the model creation unit 222, model storage unit 224, eccentricity state analysis unit 226, learning function unit 228, and optimization function unit 230 by executing the program that eliminates eccentricity according to this embodiment.

[0091] In this embodiment, the model creation unit 222 receives the results of pre-deposition (results of multiple runs) as model data using multiple control knobs. The model data includes the film thickness at the monitor locations MP1 to MP24 of the monitor wafer for each run, and the wafer boat tilt angle. The model creation unit 222 uses the model data to create a model. The created model is a mathematical representation of how the eccentricity changes with changes in the wafer boat tilt angle. The model storage unit 224 stores the model.

[0092] The learning function unit 228 according to this embodiment receives the film deposition results and analysis results input from the eccentricity state analysis unit 226, the wafer boat tilt angle corresponding to the film deposition results and analysis results (an example of the "substrate holder setting value" in this embodiment), and the model stored in the model storage unit 224 as input, and performs learning. More specifically, the learning function unit 228 uses the film deposition results and analysis results input from the eccentricity state analysis unit 226 and the wafer boat tilt angle corresponding to the film deposition results and analysis results to check if there is an error in the model stored in the model storage unit 224. If there is an error, the learning function unit 228 corrects the model.

[0093] In this embodiment, when the optimization function unit 230 receives a model corrected by the learning function unit 228, it performs an optimization calculation to calculate the optimal wafer boat tilt angle that is predicted to minimize the effect of eccentricity. The optimization function unit 230 outputs the calculated optimal wafer boat tilt angle.

[0094] Furthermore, when the optimization device 220 outputs the calculated optimal wafer boat tilt angle, it displays the degree of eccentricity improvement (amount of improvement) that will be achieved when the film is deposited using that wafer boat tilt angle, using a diagram or table. Therefore, the operator can check the amount of eccentricity improvement and decide whether to continue using the current wafer boat tilt angle or to use the newly calculated optimal wafer boat tilt angle.

[0095] [process] Figure 21 is a flowchart of an example of the model creation process according to this embodiment. In step S100, the model creation unit 222 receives the results of multiple runs as model data. The model data includes the film thickness of the monitor locations MP1 to MP24 on the monitor wafer and the wafer boat tilt angle for each run.

[0096] In step S102, the model creation unit 222 has the eccentricity state analysis unit 226 analyze the variation in film thickness for each run.

[0097] In step S104, the model creation unit 222 creates a regression equation for each measurement point, which is the monitoring location MP1 to MP24, that evaluates the variation in film thickness with respect to the amount of movement from the base position.

[0098] In step S106, the model creation unit 222 creates a regression model using the created regression equation. In step S108, the model creation unit 222 outputs the created model.

[0099] <Operation> The optimization apparatus 220 according to this embodiment is operated as shown in Figure 22, utilizing the created model, the newly deposited film result, and the wafer boat tilt angle. Figure 22 is a flowchart of an example of the operation of the optimization apparatus 220 according to this embodiment.

[0100] In step S200, the optimization device 220 verifies the initial calculation. If it is the initial calculation, it proceeds to step S202, where the optimization device 220 sets the execution count to "1", initializes the necessary variables, and then performs the process in step S206. If it is not the initial calculation, the optimization device 220 proceeds to step S204, adds "1" to the execution count, and then performs the process in step S206.

[0101] In step S206, the eccentricity state analysis unit 226 receives the newly deposited film result as input. Proceeding to step S208, the eccentricity state analysis unit 226 evaluates the variation in film thickness of the current run based on the newly deposited film result. Proceeding to step S210, the learning function unit 228 receives the model stored in the model storage unit 224 as input.

[0102] Proceeding to step S212, the learning function unit 228 uses the film deposition results and analysis results input from the eccentricity state analysis unit 226, the wafer boat tilt angle corresponding to the film deposition results and analysis results, and the model input in step S210 to check if there are any errors in the model stored in the model storage unit 224. If there are errors, the learning function unit 228 corrects the model.

[0103] The process proceeds to step S214. When the optimization function unit 230 receives the model and constraints corrected by the learning function unit 228, it creates an evaluation function J and performs an optimization calculation to find the combination that minimizes the evaluation function J. In this embodiment, the "movement change amount" of the evaluation function J is the amount of movement of the wafer boat's tilt angle set for the next Run. The amount of movement of the wafer boat's tilt angle includes, for example, the direction and angle of tilting the wafer boat's central axis.

[0104] The optimization function unit 230 finds the combination that minimizes the evaluation function J. The optimization function unit 230 outputs the amount of movement change in the found combination as the optimal wafer boat tilt angle.

[0105] In this way, the optimization function unit 230 performs optimization calculations to calculate the optimal wafer boat tilt angle that is predicted to minimize the effect of eccentricity. Proceeding to step S216, the optimization function unit 230 predicts the variation in film thickness when a film is deposited using the calculated optimal wafer boat tilt angle.

[0106] The process proceeds to step S218, where the optimization function unit 230 may display the optimal wafer boat tilt angle and the predicted state of film thickness variation when a film is deposited using that optimal tilt angle in a figure or table, or it may output them in the data format of a spreadsheet application.

[0107] The configuration of the second embodiment may be combined with the configuration of the first embodiment. That is, the model creation unit 222 may create a model using model data that includes the film thickness at the monitoring location of the monitor wafer, the teaching position, the mounting position of the wafer boat, and the wafer boat tilt angle. The learning function unit 228 may also perform model learning using the film deposition results and analysis results, the teaching position, the mounting position of the wafer boat, and the wafer boat tilt angle. Furthermore, the optimization function unit 230 may perform optimization calculations to determine the optimal wafer boat mounting position and the optimal wafer boat tilt angle that are predicted to minimize the effect of eccentricity, as well as the optimal teaching position at that wafer boat mounting position and wafer boat tilt angle.

[0108] Although preferred embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the present disclosure. For example, although the heat treatment apparatus 200 was described as an example in this embodiment, it can also be applied to batch film deposition apparatuses such as CVD (chemical vapor deposition), thermal oxidation, and ALD (atomic layer deposition).

[0109] The transfer device 30 is an example of a substrate transfer machine. The wafer boat 80 is an example of a substrate holder. The heat treatment device 200 is an example of a substrate treatment device. The control unit 140 is an example of a substrate transport control unit. The wafer boat placement position and wafer boat tilt angle are examples of wafer boat placement conditions.

[0110] [supplement] The substrate processing apparatus and substrate processing method according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner. [Explanation of Symbols]

[0111] 11 Reaction vessel 30 Transfer equipment 33 Support Arm 80 wafer boats 140 Control Unit 200 Heat treatment equipment 210 Film Thickness Measuring Device 220 Optimization device 222 Model Creation Section 224 Model Memory Unit 226 Eccentricity state analysis unit 228 Learning Function Unit 230 Optimization Function Unit 232 Constraint condition storage section M1-M7 Monitor Wafers MP1~MP24 Monitor Locations N Communication Network TP1-TP5 Teaching Positions W wafer

Claims

1. A substrate processing apparatus that processes multiple substrates, which are placed in a storage container, by transferring them to a substrate holder using a substrate transfer machine, and then introducing the substrate holder into a reaction vessel using a substrate holder transfer machine, A substrate transport control unit obtains film thickness measurement results as a result of processing at least one substrate, and determines the placement conditions for the substrate holder and the placement position of the substrate on the substrate holder based on a model, substrate transfer position setting value, and substrate holder setting value created in advance from the film thickness measurement results, and operates the substrate transfer machine. Upon obtaining the aforementioned film thickness measurement results, an eccentricity state analysis unit analyzes the eccentricity state from the film thickness variation situation, A learning function unit that updates the model based on the eccentricity state analyzed by the eccentricity state analysis unit, An optimization function unit updates the mounting conditions for the substrate holder and the mounting position of the substrate on the substrate holder based on the model, the substrate transfer position setting value, and the substrate holder setting value updated by the learning function unit, A substrate processing apparatus having

2. A substrate processing apparatus according to claim 1, The substrate holder setting value includes the mounting position of the substrate holder. The substrate transport control unit determines the placement position of the substrate holder and the placement position of the substrate on the substrate holder based on the pre-created model, the substrate transfer position setting value, the substrate holder setting value, and the constraint conditions for the placement position of the substrate on the substrate holder. The optimization function unit updates the mounting position of the substrate holder and the mounting position of the substrate on the substrate holder based on the model updated by the learning function unit, the substrate transfer position setting value, the substrate holder setting value, and the constraint conditions. Circuit board processing equipment.

3. A substrate processing apparatus according to claim 1, The substrate holder setting value includes the inclination angle of the substrate holder. The substrate transport control unit determines the inclination angle of the substrate holder and the placement position of the substrate on the substrate holder based on the pre-created model, the substrate transfer position setting value, and the substrate holder setting value. The optimization function unit updates the tilt angle of the substrate holder and the placement position of the substrate on the substrate holder based on the model updated by the learning function unit, the substrate transfer position setting value, and the substrate holder setting value. Circuit board processing equipment.

4. A substrate processing apparatus according to claim 1, The substrate holder setting value includes the mounting position of the substrate holder and the angle of the rotation axis of the substrate holder. The substrate transport control unit determines the placement position of the substrate holder, the inclination angle of the substrate holder, and the placement position of the substrate on the substrate holder based on the pre-created model, the substrate transfer position setting value, the substrate holder setting value, and the constraint conditions for the placement position of the substrate on the substrate holder. The optimization function unit updates the mounting position of the substrate holder, the inclination angle of the substrate holder, and the mounting position of the substrate on the substrate holder based on the model updated by the learning function unit, the substrate transfer position setting value, the substrate holder setting value, and the constraint conditions. Circuit board processing equipment.

5. A substrate processing apparatus according to claim 2 or 4, The substrate transport control unit operates the substrate transfer machine when the determined substrate placement position satisfies the constraint conditions, and displays the placement position of the substrate holder when the determined substrate placement position does not satisfy the constraint conditions. Circuit board processing equipment.

6. A substrate processing apparatus according to claim 3 or 4, The substrate transport control unit outputs the inclination angle of the substrate holder when the determined inclination angle of the substrate holder differs from the set value of the substrate holder. Circuit board processing equipment.

7. A substrate processing method performed by a substrate processing apparatus that processes the multiple substrates, comprising: transferring multiple substrates placed in a storage container to a substrate holder using a substrate transfer machine; introducing the substrate holder into a reaction vessel using a substrate holder transfer machine; and processing the multiple substrates. The substrate processing apparatus, The process involves obtaining film thickness measurement results as a result of processing at least one substrate, determining the placement conditions for the substrate holder and the placement position of the substrate on the substrate holder based on a model, substrate transfer position setting values, and substrate holder setting values ​​created in advance from the film thickness measurement results, and then operating the substrate transfer machine. Upon obtaining the aforementioned film thickness measurement results, the process involves analyzing the eccentricity state based on the film thickness variation, A step of updating the model based on the eccentricity state analyzed by the above-mentioned analysis step, A step of updating the mounting conditions of the substrate holder and the mounting position of the substrate on the substrate holder based on the model, the substrate transfer position setting value, and the substrate holder setting value updated by the update step, A substrate processing method that performs this operation.

8. Multiple substrates placed in a storage container are transferred to a substrate holder using a substrate transfer machine, the substrate holder is introduced into a reaction vessel using a substrate holder transfer machine, and an information processing device controls the substrate processing apparatus that processes the multiple substrates. The process involves obtaining film thickness measurement results as a result of processing at least one substrate, determining the placement conditions for the substrate holder and the placement position of the substrate on the substrate holder based on a model, substrate transfer position setting values, and substrate holder setting values ​​created in advance from the film thickness measurement results, and then operating the substrate transfer machine. Upon obtaining the aforementioned film thickness measurement results, the process involves analyzing the eccentricity state based on the film thickness variation, A step of updating the model based on the eccentricity state analyzed by the above-mentioned analysis step, A step of updating the mounting conditions of the substrate holder and the mounting position of the substrate on the substrate holder based on the model, the substrate transfer position setting value, and the substrate holder setting value updated by the update step, A program to execute.

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