Wafer transport apparatus, wafer loading / unloading device, and control method

Abstract

Relating to the technical field of wafer inspection, a wafer transfer device, a wafer loading / unloading device and a control method. The wafer transfer device includes a suction mechanism and a lifting mechanism capable of moving the suction mechanism in the vertical direction in conjunction. The suction mechanism includes a first support frame, a plurality of suction components, and a plurality of locking components. The first support frame is annular and connected to the lifting mechanism. The plurality of suction components are arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame. The plurality of suction components are provided to simultaneously provide a suction force to the bottom of the wafer, thereby closely attaching the wafer to the heat sink. The plurality of locking components are arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame. The plurality of locking components are provided to receive control and simultaneously lock the heat sink on which the wafer is placed and provide a suction force to the heat sink, thereby avoiding the wafer placed on the heat sink from falling off during the process of moving according to the suction mechanism. By sucking both the wafer and the heat sink, the stability of the wafer and the heat sink can be guaranteed during the transfer process.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer inspection, and particularly relates to a wafer transfer device, a wafer loading / unloading device, and a control method.

Background Art

[0002] In the process of performing wafer-level aging inspection on wafers, it is necessary to transfer the wafers from the wafer case to the wafer-level aging inspection device, and after the wafer-level aging inspection of the wafers is completed, transfer the wafers from the wafer-level aging inspection device to the wafer case. Therefore, it is necessary to provide a wafer transfer device to transfer the wafers. When the wafer transfer device directly夹取 the wafers, the wafers are likely to be curved, deformed, or damaged. Therefore, it is necessary to place the wafers on a heat sink and directly transfer the heat sink on which the wafers are placed using the wafer transfer device, thereby avoiding the wafers from being curved, deformed, or damaged. However, in the process of transferring in such a transfer method, it is also easy for the wafers to slide off the heat sink, the heat sink to move, or the heat sink to slide off the wafer transfer device. Therefore, it is urgent to design a wafer transfer device that can avoid the deformation and damage of the wafers and ensure the stability of the transfer of the heat sink.

[0003] Also, in the prior art, generally, after clamping the wafers in advance using a portable wafer clamp jig, the entire clamp jig carrying the wafers is sent into the aging inspection device to perform the aging inspection. However, the portable wafer clamp jig includes a heat sink and a probe plate. Even if the wafer size increases, if this type of clamp jig is still used, a clamp jig with a large size is required, which not only increases the difficulty of the operation but also slightly reduces the accuracy of the inspection.

[0004] When the portable wafer clamping jig is not used for wafer fixing and loading, the inspection chamber is generally fixed within the aging inspection device, and the wafer is grasped and loaded using a manipulator. The wafer is then directly transferred from the wafer case into the wafer-level aging inspection device for wafer-level aging inspection. However, when wafers are transported by directly gripping them, they are prone to bending, deformation, or damage. To avoid this, the wafer must first be placed on a heat sink, and the heat sink on which the wafer is placed must be directly transported using a wafer transport device. However, using such a transport method results in a complicated loading step and has drawbacks such as requiring a large loading device. Therefore, there is an urgent need to provide a wafer loading and unloading method that is simple in its loading step, has a short transport distance, and is highly reliable. [Overview of the project]

[0005] The first object of the first aspect of the present invention is to provide a wafer transport device and to solve the technical problems of the prior art in which wafers tend to fall off and deform during the process of transporting wafers in the wafer transport device.

[0006] A second object of the first aspect of the present invention is to improve the stability of the heat sink locking.

[0007] A third object of the first aspect of the present invention is to provide a wafer loading and unloading device.

[0008] The first object of a second aspect of the present invention is to provide a control method for a wafer loading / unloading device, thereby solving the technical problems of the prior art, which include the cumbersome wafer loading steps and the resulting large size of the loading device.

[0009] A second object of a second aspect of the present invention is to improve stability during the wafer transport process.

[0010] In particular, according to a first aspect of the present invention, a wafer transport device is provided for transporting a heat sink on which a wafer is placed, the wafer transport device includes a suction mechanism and a lifting mechanism that can move the suction mechanism in conjunction with the vertical direction, the suction mechanism is A first support frame that is annular and connected to the lifting mechanism, A plurality of suction components are arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame, and are provided to simultaneously provide suction force to the bottom of the wafer, thereby causing the wafer to adhere closely to the heat sink. The invention includes a plurality of locking components arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame, which are controlled and simultaneously provided to lock the heat sink on which the wafer is placed and to provide an adhesive force to the heat sink, thereby preventing the heat sink on which the wafer is placed from falling off as it moves according to the adhesive mechanism.

[0011] In particular, the present invention further, A wafer transport device for placing the heat sink on which the wafer is placed inside the inspection chamber of a wafer level aging inspection apparatus or for removing it from the inspection chamber, A heat sink inspection device provided to the side of the wafer transport device and having a mounting base for placing the heat sink, wherein the mounting base is controlled to extend from the heat sink inspection device, thereby causing the wafer transport device to place the heat sink on which the wafer is placed onto the mounting base or to remove the heat sink on which the wafer is placed from the mounting base. A wafer loading and unloading device is provided, which includes a wafer acquisition device provided to the side of the heat sink inspection device, the wafer acquisition device provided to take a wafer out of a wafer case, calibrate its position relative to the wafer, and then place the wafer on the heat sink located on the mounting base, and also provides to take a wafer out of the heat sink and send it into the wafer case.

[0012] In particular, according to a second aspect of the present invention, The steps include: placing the heat sink on which the target wafer is placed on the mounting stand of the heat sink inspection device, and then controlling the mounting stand to extend it from the side toward the wafer level aging inspection device; The steps include controlling the adsorption mechanism to clamp the heat sink on which the target wafer is placed, After controlling the mounting base to return it to its original position, the pressure-resistant platform of the wafer-level aging inspection apparatus is controlled to extend it from the side toward the heat sink inspection apparatus, The steps include controlling the adsorption mechanism to place the heat sink on which the target wafer is placed inside the sealed lid below the pressure-resistant platform, The present invention provides a method for controlling a wafer loading / unloading device, which includes the steps of: controlling the pressure-resistant platform to return it to its original position; then controlling the lower sealing lid to dock it with the lid plate assembly to form an inspection chamber, thereby performing a wafer-level aging inspection.

[0013] According to some embodiments of the present invention, the bottom of the wafer is adsorbed by multiple adsorption components, and the wafer is brought into close contact with the heat sink, thereby preventing the wafer from moving or falling off. Furthermore, multiple locking components can simultaneously lock the heat sink on which the wafer is placed, and the locking components can also provide an adsorption force to the heat sink, thereby preventing the heat sink from falling off during transport and improving the stability of the heat sink during transport. The present invention not only adsorbs the wafer but also the heat sink, and by adsorbing both, the stability of the wafer and heat sink during transport is guaranteed, and the wafer and heat sink can be prevented from falling off the adsorption mechanism.

[0014] Furthermore, in this invention, the controller simultaneously receives signals that multiple suction components are in contact with the heat sink, then controls the first power source to rotate the annular connecting component in conjunction, thereby moving the sliding assembly in conjunction with the locking component, and thereby locking the locking component to the heat sink. The simultaneous feedback that multiple suction components are in contact with the heat sink indicates that the heat sink is in a horizontal position and not tilted, eliminating the need to adjust the position of the heat sink. The multiple locking components can also be directly controlled to lock to the heat sink, preventing the heat sink from tilting, which would cause unstable locking and the heat sink to slip off, thus improving the stability of the heat sink's locking.

[0015] According to some embodiments of the present invention, in the process of transporting a heat sink on which a target wafer is placed from a heat sink inspection device to a wafer-level aging inspection device, the heat sink on which the target wafer is placed is placed on the mounting base of the heat sink inspection device. First, the mounting base of the heat sink inspection device is controlled to extend it from the side toward the wafer-level aging inspection device, then the suction mechanism is controlled to grip the heat sink, then the mounting base is controlled to return to its original position, then the pressure-resistant platform of the wafer-level aging inspection device is controlled to extend it from the side toward the heat sink inspection device, then the suction mechanism is controlled to place the heat sink inside the lower sealing lid of the pressure-resistant platform, and finally the pressure-resistant platform is controlled to return to its original position, then the lower sealing lid is controlled to dock with the lid plate assembly to form an inspection chamber, thereby performing wafer-level aging inspection. The aforementioned technical solution combines a method in which the mounting base of the heat sink inspection device and the pressure-resistant platform of the wafer level aging inspection device extend from the side with the movement of the suction mechanism, thereby enabling the transport of the heat sink, simplifying the wafer loading steps, shortening the wafer transport distance, and making the loading device even more compact.

[0016] Furthermore, in the step of controlling the suction mechanism to grip the heat sink on which the target wafer is placed, first it is confirmed that one of the locking components of the suction mechanism is in a released state, then the suction mechanism is controlled to move downward, then one of the suction components of the suction mechanism is controlled to grip the target wafer, then one of the locking components is controlled to grip the heat sink, and finally one of the locking components is controlled to grip the heat sink. In other words, the suction mechanism not only grips the heat sink on which the target wafer is placed, but also simultaneously grips the target wafer and the heat sink, respectively, thereby improving stability during the transport process of the heat sink on which the target wafer is placed, and preventing the target wafer from falling, bending, or being damaged during transport.

[0017] From the following detailed description of specific embodiments of the present invention with reference to the accompanying drawings, the above and other objects, advantages, and features of the present invention will become more apparent to those skilled in the art.

Brief Description of the Drawings

[0018] Hereinafter, some specific embodiments of the present invention will be described in detail in an exemplary and non-limiting manner with reference to the drawings. In the figures, the same reference numerals represent the same or similar parts or portions. It should be understood by those skilled in the art that these figures are not necessarily drawn to scale. Here, [Figure 1] FIG. 1 is a schematic structural diagram of a wafer transfer device according to an embodiment of the present invention. [Figure 2] FIG. 2 is a schematic enlarged view of the suction mechanism in the wafer transfer device shown in FIG. 1. [Figure 3] FIG. 3 is a schematic plan view of the suction mechanism in the wafer transfer device shown in FIG. 1. [Figure 4] FIG. 4 is a schematic structural diagram of a locking component and a sliding assembly according to an embodiment of the present invention. [Figure 5] FIG. 5 is a schematic perspective view of a locking component according to an embodiment of the present invention. [Figure 6] FIG. 6 is a schematic enlarged view of a drive assembly according to an embodiment of the present invention. [Figure 7] FIG. 7 is a schematic perspective view of the interior of a heat sink according to an embodiment of the present invention. [Figure 8] FIG. 8 is a schematic structural diagram of a heat sink according to an embodiment of the present invention. [Figure 9] FIG. 9 is a schematic perspective view of a second gas flow path inside a heat sink according to an embodiment of the present invention. [Figure 10] FIG. 10 is a schematic cross-sectional view of a suction component according to an embodiment of the present invention. [Figure 11] FIG. 11 is a schematic structural diagram of a wafer loading / unloading device according to an embodiment of the present invention. [Figure 12] FIG. 12 is a schematic structural diagram of a wafer level aging inspection device according to an embodiment of the present invention. [Figure 13] FIG. 13 is a schematic cross-sectional view of a second support frame of a wafer loading / unloading device according to an embodiment of the present invention. [Figure 14] FIG. 14 is a schematic process diagram of a control method of a wafer loading / unloading device according to an embodiment of the present invention. [Figure 15] FIG. 15 is a schematic process diagram of a control method of a wafer loading / unloading device according to another embodiment of the present invention. [Figure 16] FIG. 16 is a schematic block diagram of a wafer loading / unloading device according to an embodiment of the present invention. [Figure 17] FIG. 17 is a schematic connection diagram of a suction mechanism and a lifting mechanism according to an embodiment of the present invention. [Figure 18] FIG. 18 is a schematic structural diagram of a suction mechanism according to an embodiment of the present invention. [Figure 19] FIG. 19 is a schematic structural diagram of a wafer acquisition device and a heat sink inspection device according to an embodiment of the present invention. [Figure 20] FIG. 20 is a schematic structural diagram showing that a pressure-resistant platform of a wafer level aging inspection device according to an embodiment of the present invention is in an original state. [Figure 21] FIG. 21 is a schematic structural diagram showing that a pressure-resistant platform of a wafer level aging inspection device according to an embodiment of the present invention is in a state of being extended. [Figure 22] FIG. 22 is a schematic structural diagram showing that a suction mechanism places a heat sink into an inner lower seal cover according to an embodiment of the present invention. [Figure 23] FIG. 23 is a schematic structural diagram showing that a suction mechanism removes a heat sink from a mounting base according to an embodiment of the present invention. [Figure 24] FIG. 24 is a schematic partial view of a suction mechanism according to an embodiment of the present invention. [Figure 25] FIG. 25 is a schematic structural diagram of a locking component and a sliding assembly according to an embodiment of the present invention. [Figure 26] FIG. 26 is a schematic cross-sectional view of a locking component according to an embodiment of the present invention. [Figure 27] Figure 27 is a schematic diagram of a heat sink according to one embodiment of the present invention. [Figure 28] Figure 28 is a schematic cross-sectional view of a heat sink according to one embodiment of the present invention. [Figure 29] Figure 29 is a schematic enlarged view of section A in Figure 28. [Figure 30] Figure 30 is a schematic cross-sectional view of a suction component according to one embodiment of the present invention. [Figure 31] Figure 31 is a schematic process diagram of a control method for a wafer loading / unloading device according to one embodiment of the present invention. [Modes for carrying out the invention]

[0019] The embodiments of the present invention are described in detail below, with examples of embodiments shown in the figures. The same or similar reference numerals consistently represent the same or similar parts or parts having the same or similar functions. The embodiments described below with reference to the drawings are illustrative and intended to clarify the present invention; they should not be considered limitations on the present invention.

[0020] In the description of this invention, the directions or positional relationships indicated by terms such as "up," "down," "left," and "right" are based on the directions or positional relationships shown in the drawings and are used for the purpose of describing and simplifying the description of this invention. It should be understood that these terms do not indicate, or implicitly indicate, that the devices or components in question must be provided in a specific direction, or configured and operated in a specific direction, and therefore should not be considered as limitations on this invention.

[0021] The terms “first” and “second” are used solely for descriptive purposes and should not be interpreted as indicating or implicitly indicating relative importance or the number of technical features covered. Thus, features limited by “first” and “second” may explicitly or implicitly include at least one such feature, i.e., one or more such features. In the description of this invention, “multiple” means at least two, for example, two, three, etc., unless otherwise specifically defined. When a feature “includes” one or more features covered by it, unless otherwise specifically stated, this does not exclude other features and may further include other features.

[0022] Unless otherwise clearly defined and limited, terms such as “connect” and “attach” are to be understood in a broad sense. Unless otherwise clearly defined, for example, a connection may be fixed, detachably connected, or integrated; it may be a mechanical connection or an electrical connection; it may be a direct connection or an indirect connection through an intermediary; or it may be internal communication between two parts or interaction between two parts. Those skilled in the art will be able to understand the specific meaning of the terms in this invention from the specific context.

[0023] Unless otherwise specified, all terms used in this embodiment (including technical and scientific terms) have the same meaning as those generally understood by those skilled in the art.

[0024] Figure 1 is a schematic structural diagram of a wafer transfer device 100A according to one embodiment of the present invention, Figure 2 is a schematic enlarged view of the suction mechanism 20A in the wafer transfer device shown in Figure 1, and Figure 3 is a schematic plan view of the suction mechanism 20A in the wafer transfer device 100A shown in Figure 1. As shown in Figures 1 to 3, in a specific embodiment, the wafer transfer device 100A is used to transfer a heat sink 200A on which wafers are placed, and the wafer transfer device 100A includes a suction mechanism 20A and a lifting mechanism 10A that can move the suction mechanism 20A in conjunction with the vertical direction, and the suction mechanism 20A includes a first support frame 21A, a plurality of suction components 23A and a plurality of locking components 22A, wherein the first support frame 21A is annular and connected to the lifting mechanism 10A. Multiple suction components 23A are arranged at intervals along the circumferential direction of the first support frame 21A and are connected to the first support frame 21A. The multiple suction components 23A simultaneously provide suction force to the bottom of the wafer, thereby ensuring that the wafer adheres tightly to the heat sink 200A. Multiple locking components 22A are arranged at intervals along the circumferential direction of the first support frame 21A and are connected to the first support frame 21A. The multiple locking components 22A are controlled to simultaneously lock the heat sink 200A on which the wafer is placed and provide suction force to the heat sink 200A, thereby preventing the heat sink 200A on which the wafer is placed from falling off during movement according to the suction mechanism 20A. Here, the multiple suction components 23A and the multiple locking components 22A are arranged offset from each other, so that the multiple locking components 22A and the multiple suction components 23A are uniformly distributed on the first support frame 21A. The lifting mechanism 10A can move up and down in conjunction with the suction mechanism 20A.

[0025] In this embodiment, the bottom of the wafer is adsorbed by multiple adsorption components 23A, and the wafer is brought into close contact with the heat sink 200A, thereby preventing the wafer from moving or falling off. At the same time, multiple locking components 22A lock the heat sink 200A on which the wafer is placed, and the locking components 22A can also provide an adsorption force to the heat sink 200A, thereby preventing the heat sink 200A from falling off during transport and improving the stability of the heat sink 200A during transport. The present invention not only adsorbs the wafer but also adsorbs the heat sink 200A, and by adsorbing both, the stability of the wafer and heat sink 200A during transport is guaranteed, and the wafer and heat sink 200A can be prevented from falling off the adsorption mechanism 20A.

[0026] In this embodiment, the wafer transfer device 100A further includes a plurality of sliding assemblies 30A, each sliding assembly 30A corresponding to a locking component 22A, which is slidably connected to a first support frame 21A, thereby causing the locking component 22A to slide under control along the radial direction of the first support frame 21A, and is used to switch between a first position in which it is locked to the heat sink 200A and a second position in which it is separated from the heat sink 200A. It may also be understood as follows: All sliding assemblies 30A simultaneously move their corresponding locking components 22A toward the center position of the first support frame 21A, thereby simultaneously supporting the heat sink 200A, at which point the locking component 22A is in the first position. When all sliding assemblies 30A simultaneously move their corresponding locking parts 22A back to their original positions, that is, when they move away from the center position of the first support frame 21A, the support for the heat sink 200A is removed, and at this time the locking parts 22A are in the second position.

[0027] Figure 4 is a schematic structural diagram of a locking component 22A and a sliding assembly 30A according to one embodiment of the present invention, and Figure 5 is a schematic perspective view of a locking component 22A according to one embodiment of the present invention. As shown in Figures 4 and 5, and as also referred to in Figures 1 to 3, the locking component 22A is L-shaped and has a vertical portion 221A and a horizontal portion 222A, the horizontal portion 222A is provided to contact the bottom of the heat sink 200A when the locking component 22A moves toward the center of the first support frame 21A, thereby supporting the heat sink 200A. As can be seen in Figure 2, multiple notches 240A are provided on the outer circumference of the heatsink 200A, and each notch 240A corresponds to one locking component 22A. The locking component 22A moves from the notch 240A to the lateral portion 222A and is positioned below the heatsink 200A, thereby supporting the heatsink 200A. When the lateral portion 222A of the locking component 22A moves to the notch 240A, the support for the heatsink 200A is removed.

[0028] In this embodiment, a first gas passage 223A is provided inside the locking part 22A, which attracts the heat sink 200A when it comes into contact with the bottom of the heat sink 200A. As can be seen from Figure 5, the uppermost part of the lateral portion 222A has an adsorption port 224A that communicates with the first gas passage 223A, and the heat sink 200A is attracted by the adsorption port 224A. In this embodiment, not only is the wafer attracted, but the bottom of the heat sink 200A is also attracted, thereby preventing the heat sink 200A from moving or sliding off.

[0029] Figure 6 is a schematic enlarged view of a drive assembly 40A according to one embodiment of the present invention. As shown in Figure 6, in this embodiment, the wafer transfer device 100A further includes a drive assembly 40A, which is provided on a first support frame 21A and cooperates with a plurality of locking parts 22A and a sliding assembly 30A, thereby being controlled to simultaneously switch the locking parts 22A between a first position and a second position. In other words, the drive assembly 40A can simultaneously drive a plurality of sliding assemblies 30A to move the corresponding locking parts 22A in conjunction.

[0030] In this embodiment, the drive assembly 40A includes at least one first power source 41A and an annular connector 42A, the first power source 41A being mounted on top of the first support frame 21A. The annular connector 42A is mounted on the first support frame 21A and is concentrically positioned with the first support frame 21A, and is connected to the first power source 41A and cooperates with a plurality of sliding assemblies 30A, the annular connector 42A being rotated in conjunction with the first power source 41A, thereby simultaneously sliding the plurality of sliding assemblies 30A in conjunction, thereby simultaneously moving the plurality of locking components 22A in conjunction. Here, the first power source 41A is a pen cylinder, and in other embodiments, the first power source 41A may be a different component, such as a rack and pinion structure. In this embodiment, there are two first power sources 41A, and the two first power sources 41A are spaced apart on the first support frame 21A. In other embodiments, the number of first power sources 41A may be set based on specific design requirements, for example, based on the diameter of the annular connecting component 42A, where the larger the diameter of the annular connecting component 42A, the more first power sources 41A there are, and the smaller the diameter of the annular connecting component 42A, the fewer first power sources 41A there are.

[0031] As shown in Figures 4 and 6, in this embodiment, the sliding assembly 30A includes an upper sliding component 31A connected to a locking component 22A and a lower sliding component 32A connected to a first support frame 21A, with a contact portion 34A provided on the upper sliding component 31A. The annular connecting component 42A is provided with a plurality of first projections 421A having an inclined surface 422A, each first projection 421A corresponding to a contact portion 34A of one sliding assembly 30A, and the first projections 421A are provided so as the annular connecting component 42A rotates, the contact portion 34A slides along the inclined surface 422A, thereby driving the upper sliding component 31A to slide along the lower sliding component 32A. In other words, as the annular connecting part 42A rotates, the first projection 421A moves, and at this time the contact portion 34A moves upward or downward along the inclined surface 422A. When the annular connecting part 42A rotates clockwise, the contact portion 34A moves downward along the inclined surface 422A, and the upper sliding part 31A moves in conjunction with the locking part 22A toward the center position of the first support frame 21A until it reaches the first position. When the annular connecting part 42A rotates counterclockwise, the contact portion 34A moves upward along the inclined surface 422A, and the upper sliding part 31A moves in conjunction with the locking portion toward the center position of the first support frame 21A until it reaches the second position. This embodiment achieves the movement of the locking portion by cleverly providing a projection with an inclined surface 422A, and the structure is simple and easy to implement. In this embodiment, the annular connecting part 42A is further provided with a plurality of second protrusions 423A, each second protrusion 423A has a groove, and each second protrusion 423A is connected to a connecting part that cooperates with the groove, and the connecting part is connected to the first power source 41A, thereby causing the first power source 41A to rotate the annular connecting part 42A in conjunction with the cooperation of the connecting part and the second protrusions 423A. In this embodiment, one end of the upper sliding part 31A is also connected to the first support frame 21A by an elastic part 33A, and when the locking part 22A is in the second position, the elastic part 33A is in an extended state, and when the locking part is in the first position, the elastic part 33A returns to its original state.

[0032] As shown in Figure 6, the wafer transfer device 100A further includes a plurality of first sensors 51A and a plurality of second sensors 61A, the first sensors 51A being mounted on a first support frame 21A, each first sensor 51A corresponding to one sliding assembly 30A and used to detect whether the corresponding locking component 22A is in a first position. The second sensors 61A being mounted on a first support frame 21A, each second sensor 61A corresponding to one sliding assembly 30A and used to detect whether the corresponding locking component 22A is in a second position. It may also be understood as follows: one first sensor 51A and one second sensor 61A are installed on each sliding assembly 30A, and a first limiting section 52A and a second limiting section 62A are connected to the upper sliding component 31A of the sliding assembly 30A, the first limiting section 52A being used to cooperate with the first sensor 51A and the second limiting section 62A being used to cooperate with the second sensor 61A. When the first sensor 51A detects the first limiting section 52A, it is determined that the locking component 22A has reached the first position, and when the second sensor 61A detects the second limiting section 62A, it is determined that the locking component 22A has reached the second position.

[0033] In this embodiment, the wafer transfer device 100A further includes a controller (not shown), which is connected to a plurality of suction components 23A, a first power source 41A, a first sensor 51A, and a second sensor 61A, respectively. This causes the sliding assembly 30A to move in conjunction with the locking component 22A, thereby locking the locking component 22A to the heat sink 200A. The simultaneous feedback that the plurality of suction components 23A are in contact with the heat sink 200A indicates that the heat sink 200A is in a horizontal position and not tilted, eliminating the need to adjust the position of the heat sink 200A. The plurality of locking components 22A can also be directly controlled to lock to the heat sink 200A, preventing the heat sink 200A from tilting, which would cause unstable locking and the heat sink 200A to slide off, thus improving the stability of the locking of the heat sink 200A.

[0034] In this embodiment, the controller is configured to simultaneously receive signals indicating that multiple suction components 23A are in contact with the heat sink 200A, and then control the first power source 41A to interlock the annular connecting component 42A and move it along the circumferential direction of the first support frame 21A. The controller is also configured to receive a signal from the first sensor 51A, then control the locking component 22A to attract the heat sink 200A, and then control the lifting mechanism 10A to interlock the suction mechanism 20A and move it along the vertical direction. The controller is also configured to receive a signal from the second sensor 61A, then control the lifting mechanism 10A to interlock the suction mechanism 20A and move it along the vertical direction.

[0035] Figure 7 is a schematic perspective view of the inside of a heat sink 200A according to one embodiment of the present invention, Figure 8 is a schematic structural diagram of a heat sink 200A according to one embodiment of the present invention, and Figure 9 is a schematic perspective view of a second gas channel 230A inside a heat sink 200A according to one embodiment of the present invention. As shown in Figures 7 to 9, in this embodiment, a first region 210A for placing a wafer and a second region 220A other than the first region 210A are provided at the top of the heat sink 200A, and a plurality of second gas channels 230A are provided inside the heat sink 200A, each second gas channel 230A corresponding to one adsorption component 23A and having a first gas hole 232A located in the first region 210A and a second gas hole 231A located in the second region 220A.

[0036] Figure 10 is a schematic cross-sectional view of an adsorption component 23A according to one embodiment of the present invention. As shown in Figure 10, and also as referred to in Figure 6, a third gas channel is provided inside the adsorption component 23A, extending downward from the first support frame 21A. When the adsorption component 23A contacts the heat sink 200A, the third gas channel communicates with the second gas hole 231A of the corresponding second gas channel 230A, thereby adsorbing the wafer via the second gas hole 231A, then the second gas channel 230A, and then the first gas hole 232A. In this embodiment, there are eight second gas channels 230A, each corresponding to one adsorption component 23A. In other embodiments, the number of second gas channels 230A may be set according to the actual needs.

[0037] Figure 11 is a schematic diagram of a wafer loading / unloading device according to one embodiment of the present invention. As shown in Figure 11, the wafer loading / unloading device includes the wafer transport device 100A, a heat sink inspection device 300A, and a wafer acquisition device 400A. The wafer transport device 100A is used to place a heat sink 200A on which a wafer is placed into or out of the inspection chamber of a wafer level aging inspection device 610A. The heat sink inspection device 300A is provided to the side of the wafer transport device 100A and has a mounting base 310A on which the heat sink 200A is placed. The mounting base 310A is controlled to extend from the heat sink inspection device 300A, thereby enabling the wafer transport device 100A to place the heat sink 200A on the mounting base 310A or to remove the heat sink 200A on which a wafer is placed from the mounting base 310A. The wafer acquisition device 400A is located to the side of the heat sink inspection device 300A. The wafer acquisition device 400A is configured to take a wafer out of the wafer case 500A, calibrate its position relative to the wafer, and then place the wafer on the heat sink 200A located on the mounting base 310A. The wafer acquisition device 400A is also configured to take the wafer from the heat sink 200A and send it into the wafer case 500A.

[0038] In this embodiment, the heat sink inspection device 300A is provided with a first gripper 330A for adsorbing the heat sink 200A. When dust is detected on the heat sink 200A, the first gripper 330A can move the heat sink 200A to a fan 320A located on the side of the mounting base 310A to clean the dust. After cleaning, the heat sink 200A is then placed back on the mounting base 310A. Here, the mounting base 310A of the heat sink inspection device 300A can be extended to the left, below the adsorption mechanism 20A, so that when the adsorption mechanism 20A moves downward, it can acquire or place the heat sink 200A on which the wafer is placed.

[0039] In this embodiment, the wafer acquisition device 400A has a second gripper 410A. The second gripper 410A first removes the wafer to be inspected from the wafer case 500A, places the wafer to be inspected on the wafer position calibration station 420A to calibrate its position, and after calibrating the wafer's position, the second gripper 410A moves along a direction toward the heat sink inspection device 300A, thereby placing the wafer on the heat sink 200A of the mounting base 310A of the heat sink inspection device 300A. After that, the wafer and the heat sink 200A may be considered as a single unit, and they are transported together during the process of the whole moving. In other words, the heat sink 200A and the wafer may be considered as a single unit within the heat sink inspection device 300A and the wafer transport device 100A, and they are transported together.

[0040] Figure 12 is a schematic structural diagram of a wafer-level aging inspection device according to one embodiment of the present invention. As shown in Figure 12, in this embodiment, the wafer-level aging inspection apparatus 610A is placed inside the wafer-level aging inspection device 600A. The wafer-level aging inspection device 600A has multiple mounting spaces arranged along the longitudinal direction for placing wafer-level aging inspection apparatuses 610A, with one wafer-level aging inspection apparatus 610A placed in each mounting space, and each wafer-level aging inspection apparatus 610A is capable of performing aging inspection on a wafer. In this embodiment, the wafer-level aging inspection device 600A and the heat sink inspection apparatus 300A are arranged opposite each other on the left and right sides of the wafer transport apparatus 100A. The wafer transfer device 100A can place the heat sink 200A on which the wafer is placed inside the inspection chamber of the lower sealing lid 620A of any of the wafer level aging inspection devices 610A, provided that the lower sealing lid 620A extends beyond the wafer level aging inspection device 600A, and the lower sealing lid 620A of each wafer level aging inspection device 610A can extend below the suction mechanism 20A. In addition, a heat dissipation component 630A is provided inside the wafer level aging inspection device 600A to dissipate heat from the wafer level aging inspection device 610A, thereby preventing overheating of the wafer level aging inspection device 610A. In this embodiment, a plurality of inspection source meters are further placed inside the wafer level aging inspection device 600A, and each wafer level aging inspection device 610A is connected to one inspection source meter, thereby performing wafer level aging inspection on the wafer.

[0041] Figure 13 is a schematic cross-sectional view of a second support frame 340A of a wafer loading / unloading device according to one embodiment of the present invention. As shown in Figure 13, the mounting base 310A includes a second support frame 340A that can move up and down along the vertical direction. When a wafer 700A is placed on the mounting base 310A, the second support frame 340A rises and passes over the heat sink 200A to receive the wafer 700A. When transporting the wafer 700A, the second support frame 340A drops and separates from the heat sink 200A, thereby bringing the wafer 700A into close contact with the heat sink 200A.

[0042] Specifically, the second support frame 340A includes a second power source 343A, at least one lifting column 342A, and a base 341A. The second power source 343A is connected to the base 341A, the base 341A is connected to the lifting column 342A, and the lifting column 342A can pass through corresponding holes on the heat sink 200A. The second power source 343A drives the lifting column 342A to raise and lower it. In this embodiment, there are three lifting columns 342A.

[0043] Figure 14 is a schematic process diagram of a control method for a wafer loading / unloading device according to one embodiment of the present invention. As shown in Figure 14, in this embodiment, the control method for a wafer loading / unloading device includes the following steps. Step S1110 involves controlling the wafer acquisition device 400A to remove the wafer from the wafer case 500A and calibrating the position relative to the wafer. Step S1120 involves controlling the wafer acquisition device 400A to place the position-calibrated wafer onto the heat sink 200A of the mounting base 310A of the heat sink inspection device 300A. Step S1130 involves controlling the mounting base 310A of the heat sink inspection device 300A to be extended. In step S1140, the wafer transport device 100A is controlled to remove the heat sink 200A on which the wafer is placed from the mounting base 310A. In step S1150, the mounting base 310A is controlled to return to its original position, and then the wafer transport device 100A is controlled to place the heat sink on which the wafer is placed into the inspection chamber of the wafer level aging inspection device 610A to perform wafer level aging inspection.

[0044] This embodiment enables fully automated wafer loading by the control method described above, eliminating the need for manual labor, reducing human costs, and improving inspection efficiency.

[0045] In step S1110, a scanning device is provided on the second gripper 410A of the wafer acquisition device 400A. Before grasping the wafer, the scanning device first scans the wafer case to confirm the position of the wafer, and then grasps the wafer using the second gripper 410A.

[0046] In step S1120, as the second gripper 410A of the wafer acquisition device 400A places the wafer on the heat sink 200A of the mounting base 310A, the multiple lifting columns 342A on the mounting base 310A pass through holes on the heat sink 200A and extend upward, the second gripper 410A places the wafer on the multiple lifting columns 342A, and then the lifting columns 342A are retracted downward and return to their original positions, thereby moving the wafer downward in conjunction until it is in close contact with the heat sink 200A.

[0047] Figure 15 is a schematic process diagram of a wafer loading / unloading device control method according to another embodiment of the present invention. As shown in Figure 15, in this embodiment, the wafer loading / unloading device control method further includes the following steps. In step S1210, after the wafer-level aging inspection of the wafer is completed, the wafer transport device 100A is controlled to remove the heat sink 200A on which the wafer is placed from the wafer-level aging inspection device 610A. Step S1220 involves controlling the mounting base 310A of the heat sink inspection device 300A to extend it. In step S1230, the wafer transport device 100A is controlled to place the heat sink 200A on which the wafer is placed onto the mounting base 310A. Step S1240 is performed, in which the mounting base 310A is controlled to return to its original position. In step S1250, the wafer acquisition device 400A is controlled to transfer the wafer from the heat sink 200A into the wafer case 500A.

[0048] This embodiment not only enables fully automated wafer loading, but also automatically returns the wafer to the wafer case 500A after the wafer level aging inspection is complete. Since the entire wafer loading and unloading process is automated, the smartening of the wafer level aging inspection is improved.

[0049] Figure 16 is a schematic block diagram of a wafer loading / unloading device 100B according to one embodiment of the present invention, Figure 17 is a schematic connection diagram of the suction mechanism 20B and lifting mechanism 24B according to one embodiment of the present invention, Figure 18 is a schematic structural diagram of the suction mechanism 20B according to one embodiment of the present invention, Figure 19 is a schematic structural diagram of a wafer acquisition device 80B and heat sink inspection device 70B according to one embodiment of the present invention, Figure 20 is a schematic structural diagram of the pressure-resistant platform 11B of the wafer level aging inspection device 10B according to one embodiment of the present invention in its original state, Figure 21 is a schematic structural diagram of the pressure-resistant platform 11B of the wafer level aging inspection device 10B according to one embodiment of the present invention in an extended state, Figure 22 is a schematic structural diagram of the suction mechanism 20B placing the heat sink 200B inside the lower sealing lid 12B according to one embodiment of the present invention, and Figure 23 is a schematic structural diagram of the suction mechanism 20B removing the heat sink 200B from the mounting base 71B according to one embodiment of the present invention. As shown in Figures 16 to 23, in this embodiment, the wafer loading / unloading device 100B includes a wafer acquisition device 80B, a heat sink inspection device 70B, a suction mechanism 20B, and a wafer level aging inspection device 10B. The wafer acquisition device 80B is configured to place the target wafer W on the heat sink 200B of the mounting base 71B of the heat sink inspection device 70B. The heat sink inspection device 70B is located to the side of the wafer acquisition device 80B and has a mounting base 71B, which is configured to be controlled to extend or retract from the side toward the wafer level aging inspection device 10B. The adsorption mechanism 20B is located on the side of the heat sink inspection device 70B and, under control, grips the heat sink 200B on which the target wafer W is placed, and is positioned to place the heat sink 200B on which the target wafer W is placed inside the lower sealed lid 12B of the pressure-resistant platform 11B of the wafer level aging inspection device 10B.The wafer-level aging inspection device 10B is located to the side of the suction mechanism 20B and is used to perform wafer-level aging inspection on the target wafer W. The wafer-level aging inspection device 10B has a pressure-resistant platform 11B, which is controlled to extend or retract from the side toward the heat sink inspection device 70B.

[0050] In this embodiment, the mounting base 71B is positioned under control to extend laterally toward the wafer level aging inspection device 10B to below the suction mechanism 20B. After the mounting base 71B extends laterally, the suction mechanism 20B grips the heat sink 200B, then moves the heat sink 200B on which the target wafer W is placed upward to the first target position in conjunction with it, and subsequently the pressure-resistant platform 11B is positioned under control to extend laterally toward the heat sink inspection device 70B to below the suction mechanism 20B.

[0051] In this embodiment, the suction mechanism 20B moves up and down to transport the heat sink 200B, provided that the pressure-resistant platform 11B of the wafer-level aging inspection device 10B and the mounting base 71B of the heat sink inspection device 70B are controlled to shift relative to each other and extend from the side to below the suction mechanism 20B. In other embodiments, the suction mechanism 20B may move left and right to transport the heat sink 200B, and this may be specifically set based on design requirements.

[0052] In this embodiment, since the heat sink inspection device 70B and the wafer level aging inspection device 10B are located on the left and right sides of the suction mechanism 20B, respectively, the transport distance of the target wafer W can be shortened and the transport time can be reduced, making the structure of the wafer loading / unloading device 100B more compact and requiring less space.

[0053] In this embodiment, the wafer-level aging inspection apparatus 10B further includes a push-up mechanism 13B located below the pressure-resistant platform 11B and a cover plate assembly 14B located above the pressure-resistant platform 11B. The push-up mechanism 13B moves upward to a position where it contacts the lower sealing cover 12B, and then continues to move upward, thereby moving the lower sealing cover 12B upward in conjunction with the cover plate assembly 14B, thereby forming an inspection chamber, and is configured to perform wafer-level aging inspection on the target wafer W in the inspection chamber.

[0054] In this embodiment, the heat sink inspection device 70B is provided with a gripper (i.e., a first gripper) 72B for adsorbing the heat sink 200B. When dust is detected on the heat sink 200B, the gripper 72B can move the heat sink 200B to a fan on the side of the mounting base 71B to clean the dust. After cleaning, the heat sink 200B is then placed back on the mounting base 71B. Here, the mounting base 71B of the heat sink inspection device 70B can be extended to the left, below the adsorption mechanism 20B. As a result, when the adsorption mechanism 20B moves downward, it can acquire or place the heat sink 200B on which the target wafer W is placed.

[0055] In this embodiment, the wafer acquisition device 80B has a manipulator (also called a second gripper) 81B. The manipulator 81B first takes the wafer W to be inspected out of the wafer case 90B, places the wafer W to be inspected on the wafer position calibration station 82B to calibrate its position, and after calibrating the wafer's position, the manipulator 81B moves along a direction toward the heat sink inspection device 70B, thereby placing the target wafer W on the heat sink 200B of the mounting base 71B of the heat sink inspection device 70B. After that, the wafer and the heat sink 200B may be considered as a single unit, and they are transported together during the process of the whole moving. In other words, the heat sink 200B and the target wafer W may be considered as a single unit within the heat sink inspection device 70B, the adsorption mechanism 20B, and the wafer level aging inspection device 10B, and they are transported together.

[0056] In this embodiment, the suction mechanism 20B is connected to the lifting mechanism 24B, and the lifting mechanism 24B can move the suction mechanism 20B along the vertical direction in conjunction with it. The suction mechanism 20B includes a first support frame 21B, a plurality of suction components 23B, and a plurality of locking components 22B, wherein the first support frame 21B is annular. The plurality of suction components 23B are arranged at intervals along the circumferential direction of the first support frame 21B and are connected to the first support frame 21B, and the plurality of suction components 23B simultaneously provide suction force to the bottom of the target wafer W, thereby causing the target wafer W to adhere closely to the heat sink 200B. Multiple locking components 22B are arranged at intervals along the circumferential direction of the first support frame 21B and are connected to the first support frame 21B. The multiple locking components 22B are provided to be controlled and simultaneously lock and hold the heat sink 200B on which the target wafer W is placed, thereby preventing the heat sink 200B on which the target wafer W is placed from falling off during movement. Here, the multiple suction components 23B and the multiple locking components 22B are arranged alternately, and the multiple locking components 22B and the multiple suction components 23B are uniformly arranged on the first support frame 21B. The lifting mechanism 24B can move up and down in conjunction with the suction mechanism 20B.

[0057] In this embodiment, the bottom of the target wafer W is adsorbed by multiple adsorption components 23B, and the target wafer W is brought into close contact with the heat sink 200B, thereby preventing the target wafer W from moving or falling off. At the same time, multiple locking components 22B lock the heat sink 200B on which the target wafer W is placed, and the locking components 22B can also provide an adsorption force to the heat sink 200B, thereby preventing the heat sink 200B from falling off during transport and improving the stability of the heat sink 200B during transport. The present invention not only adsorbs the target wafer W but also adsorbs the heat sink 200B, and by adsorbing both, the stability of the target wafer W and heat sink 200B during transport is guaranteed, and the target wafer W and heat sink 200B can be prevented from falling off the adsorption mechanism 20B.

[0058] As shown in Figure 18, in this embodiment, the wafer loading / unloading device 100B further includes a plurality of sliding assemblies 30B, each sliding assembly 30B corresponding to a locking component 22B, which is slidably connected to a first support frame 21B, thereby causing the locking component 22B to slide under control along the radial direction of the first support frame 21B, and is used to switch between a first position in which it is locked to the heat sink 200B and a second position in which it is separated from the heat sink 200B. It may also be understood as follows: All sliding assemblies 30B simultaneously move their corresponding locking components 22B toward the center position of the first support frame 21B, thereby simultaneously supporting the heat sink 200B, at which point the locking component 22B is in the first position. When all sliding assemblies 30B simultaneously move their corresponding locking parts 22B back to their original positions, that is, when they move away from the center position of the first support frame 21B, the support for the heat sink 200B is removed, and at this time the locking parts 22B are in the second position.

[0059] Figure 24 is a schematic local view of the adsorption mechanism 20B according to one embodiment of the present invention, Figure 25 is a schematic structural view of the locking component 22B and sliding assembly 30B according to one embodiment of the present invention, and Figure 26 is a schematic cross-sectional view of the locking component 22B according to one embodiment of the present invention. As shown in Figures 24 to 26, and also as referred to in Figure 18, the locking component 22B is L-shaped and has a vertical portion 221B and a horizontal portion 222B, the horizontal portion 222B is provided to abut against the bottom of the heat sink 200B when the locking component 22B moves toward the center of the first support frame 21B, thereby supporting the heat sink 200B. As can be seen from Figure 24, multiple notches 240B are provided on the outer circumference of the heat sink 200B. Each notch 240B corresponds to one locking component 22B. The locking component 22B moves from the notch 240B to the lateral portion 222B and is positioned below the heat sink 200B, thereby supporting the heat sink 200B. When the lateral portion 222B of the locking component 22B moves to the notch 240B, the support for the heat sink 200B is removed.

[0060] In this embodiment, a first gas passage 223B is provided inside the locking part 22B, which attracts the heat sink 200B when it comes into contact with the bottom of the heat sink 200B. As can be seen from Figure 25, the uppermost part of the lateral portion 222B has an adsorption port 224B that communicates with the first gas passage 223B, and the heat sink 200B is attracted by the adsorption port 224B. In this embodiment, not only is the target wafer W attracted, but the bottom of the heat sink 200B is also attracted, thereby preventing the heat sink 200B from moving or sliding off.

[0061] As shown in Figure 24, in this embodiment, the wafer loading / unloading device 100B further includes a drive assembly 40B, which is mounted on a first support frame 21B and cooperates with a plurality of locking components 22B and a sliding assembly 30B, thereby being controlled to simultaneously switch the locking components 22B between a first position and a second position. In other words, the drive assembly 40B can simultaneously drive a plurality of sliding assemblies 30B to move the corresponding locking components 22B in conjunction.

[0062] In this embodiment, the drive assembly 40B includes at least one first power source 41B and an annular connector 42B, the first power source 41B being mounted on top of the first support frame 21B. The annular connector 42B is mounted on the first support frame 21B and is concentrically positioned with the first support frame 21B, and is connected to the first power source 41B and cooperates with a plurality of sliding assemblies 30B, the annular connector 42B is configured to rotate in conjunction with the first power source 41B, thereby simultaneously sliding the plurality of sliding assemblies 30B in conjunction, thereby simultaneously moving the plurality of locking components 22B in conjunction. Here, the first power source 41B is a pen cylinder, and in other embodiments, the first power source 41B may be a different component, such as a rack and pinion structure. In this embodiment, there are two first power sources 41B, and the two first power sources 41B are spaced apart on the first support frame 21B. In other embodiments, the number of first power sources 41B may be set based on specific design requirements, for example, based on the diameter of the annular connecting component 42B, where the larger the diameter of the annular connecting component 42B, the more first power sources 41B there are, and the smaller the diameter of the annular connecting component 42B, the fewer first power sources 41B there are.

[0063] As shown in Figures 24 and 25, in this embodiment, the sliding assembly 30B includes an upper sliding component 31B connected to a locking component 22B and a lower sliding component 32B connected to a first support frame 21B, with a contact portion 34B provided on the upper sliding component 31B. The annular connecting component 42B is provided with a plurality of first projections 421B having inclined surfaces 422B, each first projection 421B corresponding to a contact portion 34B of one sliding assembly 30B, and the first projections 421B are provided so as the annular connecting component 42B rotates, the contact portion 34B slides along the inclined surface 422B, thereby driving the upper sliding component 31B to slide along the lower sliding component 32B. In other words, as the annular connecting part 42B rotates, the first projection 421B moves, and at this time the contact portion 34B moves upward or downward along the inclined surface 422B. When the annular connecting part 42B rotates clockwise, the contact portion 34B moves downward along the inclined surface 422B, and the upper sliding part 31B moves in conjunction with the locking part 22B toward the center position of the first support frame 21B until it reaches the first position. When the annular connecting part 42B rotates counterclockwise, the contact portion 34B moves upward along the inclined surface 422B, and the upper sliding part 31B moves in conjunction with the locking portion toward the center position of the first support frame 21B until it reaches the second position. This embodiment achieves the movement of the locking portion by cleverly providing a projection with an inclined surface 422B, and the structure is simple and easy to implement. In this embodiment, the annular connecting part 42B is further provided with a plurality of second protrusions 423B, each second protrusion 423B has a groove, and each second protrusion 423B is connected to a connecting part that cooperates with the groove, and the connecting part is connected to the first power source 41B, thereby causing the first power source 41B to rotate the annular connecting part 42B in conjunction with the cooperation of the connecting part and the second protrusions 423B. In this embodiment, one end of the upper sliding part 31B is also connected to the first support frame 21B by an elastic part 33B, and when the locking part 22B is in the second position, the elastic part 33B is in an extended state, and when the locking part is in the first position, the elastic part 33B returns to its original state.

[0064] As shown in Figure 18, the wafer loading / unloading device 100B further includes a plurality of first sensors 51B and a plurality of second sensors 61B, the first sensors 51B being mounted on a first support frame 21B, each first sensor 51B corresponding to one sliding assembly 30B and used to detect whether the corresponding locking component 22B is in a first position. The second sensors 61B being mounted on the first support frame 21B, each second sensor 61B corresponding to one sliding assembly 30B and used to detect whether the corresponding locking component 22B is in a second position. It may also be understood as follows: Each sliding assembly 30B is equipped with one first sensor 51B and one second sensor 61B. A first limiting section 52B and a second limiting section 62B are connected to the upper sliding part 31B of the sliding assembly 30B. The first limiting section 52B is used to cooperate with the first sensor 51B, and the second limiting section 62B is used to cooperate with the second sensor 61B. When the first sensor 51B detects the first limiting section 52B, it is determined that the locking part 22B has reached a first position. When the second sensor 61B detects the second limiting section 62B, it is determined that the locking part 22B has reached a second position.

[0065] In this embodiment, the wafer loading / unloading device 100B further includes a controller (not shown), which is connected to a plurality of suction components 23B, a first power source 41B, a first sensor 51B, and a second sensor 61B, respectively, thereby moving the sliding assembly 30B in conjunction with the locking component 22B, which in turn locks the locking component 22B onto the heat sink 200B. The feedback that the plurality of suction components 23B are in contact with the heat sink 200B indicates that the heat sink 200B is in a horizontal position and not tilted, eliminating the need to adjust the position of the heat sink 200B. The plurality of locking components 22B can also be directly controlled to lock onto the heat sink 200B, preventing the heat sink 200B from tilting, which would cause unstable locking and the heat sink 200B to slide off, thus improving the stability of the heat sink 200B's locking.

[0066] In this embodiment, the controller is configured to simultaneously receive signals indicating that multiple suction components 23B are in contact with the heat sink 200B, and then control the first power source 41B to interlock the annular connecting component 42B and move it along the circumferential direction of the first support frame 21B. The controller is also configured to receive a signal from the first sensor 51B, then control the locking component 22B to attract the heat sink 200B, and then control the lifting mechanism 24B to interlock the suction mechanism 20B and move it along the vertical direction. The controller is also configured to receive a signal from the second sensor 61B, then control the lifting mechanism 24B to interlock the suction mechanism 20B and move it along the vertical direction.

[0067] Figure 27 is a schematic structural diagram of a heat sink 200B according to one embodiment of the present invention, Figure 28 is a schematic cross-sectional view of the heat sink 200B according to one embodiment of the present invention, and Figure 29 is a schematic enlarged view of portion A in Figure 28. As shown in Figures 27 to 29, in this embodiment, a plurality of second gas passages 230B are provided inside the heat sink 200B, each second gas passage 230B corresponds to one adsorption component 23B, and the second gas passages 230B have a first gas hole 220B and a second gas hole 210B located at the top of the heat sink 200B. As shown in Figure 29, when the target wafer W is positioned in the heat sink 200B, it is located at the top of the first gas hole 220B.

[0068] Figure 30 is a schematic cross-sectional view of an adsorption component 23B according to one embodiment of the present invention. As shown in Figure 30, and also as referred to in Figure 18, a third gas channel 231B is provided inside the adsorption component 23B, extending downward from the first support frame 21B. The third gas channel 231B communicates with the second gas hole 210B of the corresponding second gas channel 230B when the adsorption component 23B comes into contact with the heat sink 200B, thereby adsorbing the target wafer W via the second gas hole 210B, then the second gas channel 230B, and then the first gas hole 220B. In this embodiment, there are eight second gas channels 230B, and each second gas channel 230B corresponds to one adsorption component 23B. In other embodiments, the number of second gas channels 230B may be set according to the actual needs.

[0069] In this embodiment, the heat sink 200B further has a first vacuum adsorption gas channel 250B and a through hole 260B arranged along the thickness direction, the first vacuum adsorption gas channel 250B is used to draw a vacuum from the bottom and thereby adsorb the target wafer W located at the top of the heat sink 200B, and the through hole 260B is used for a second support frame to pass through the heat sink 200B and thereby receive the target wafer W.

[0070] Figure 31 is a schematic process diagram of a wafer loading / unloading device control method according to one embodiment of the present invention. As shown in Figure 31, in a specific embodiment, the wafer loading / unloading device control method includes the following steps. In step S100, after placing the heat sink 200B on which the target wafer W is placed on the mounting base 71B of the heat sink inspection device 70B, the mounting base 71B is controlled to extend from the side toward the wafer level aging inspection device 10B. In step S200, the suction mechanism 20B is controlled to grip the heat sink 200B on which the target wafer W is placed. In step S300, after controlling the mounting base 71B to return it to its original position, the pressure-resistant platform 11B of the wafer level aging inspection device 10B is controlled to extend it from the side toward the heat sink inspection device 70B. In step S400, the suction mechanism 20B is controlled to place the heat sink 200B on which the target wafer W is placed inside the sealed lid 12B below the pressure-resistant platform 11B. In step S500, the pressure-resistant platform 11B is controlled to return to its original position, and the lower sealing lid 12B is controlled to dock with the lid plate assembly 14B to form an inspection chamber, thereby performing wafer-level aging inspection.

[0071] In this embodiment, the heat sink 200B can be transported by combining a method in which the mounting base 71B of the heat sink inspection device 70B and the pressure-resistant platform 11B of the wafer-level aging inspection device 10B are extended from the side, with the movement of the suction mechanism 20B. This simplifies the wafer loading steps and shortens the wafer transport distance, making the loading device even more compact.

[0072] In this embodiment, the suction mechanism 20B moves up and down to transport the heat sink 200B, provided that the pressure-resistant platform 11B of the wafer-level aging inspection device 10B and the mounting base 71B of the heat sink inspection device 70B are controlled to shift relative to each other and extend from the side to below the suction mechanism 20B. In other embodiments, the suction mechanism 20B may move left and right to transport the heat sink 200B, and this may be specifically set based on design requirements.

[0073] In some embodiments, step S200 specifically includes the following steps: In step S210, after confirming that one of the locking components 22B of the suction mechanism 20B is in a released state, the suction mechanism 20B is controlled to move downward. In step S220, the adsorption component 23B of one of the adsorption mechanisms 20B is controlled to adsorb onto the target wafer W. Step S230 involves controlling one of the locking components 22B to clamp the heat sink 200B. Step S240 involves controlling one of the locking components 22B to make it adhere to the heat sink 200B.

[0074] In this embodiment, the suction mechanism 20B not only grips the heat sink 200B on which the target wafer W is placed, but also simultaneously adsorbs both the target wafer W and the heat sink 200B. This improves the stability of the heat sink 200B on which the target wafer W is placed during transport, preventing the target wafer W from falling, bending, or being damaged during transport.

[0075] In a preferred embodiment, before the suction mechanism 20B moves downward, all locking components 22B are controlled to be released, and a photoelectric sensor on each locking component 22B of the suction mechanism 20B obtains information on whether the locking component 22B is in a released state. If it is confirmed that all locking components 22B are in a released state, the suction mechanism 20B is controlled to move downward. If any locking component 22B is not released, an alarm is sounded. Here, the locking component 22B may be understood as a jaw chuck. In step S240, a gas passage connected to a vacuum suction device is provided inside the locking component 22B, and the vacuum suction device is activated to create a vacuum and suction the heat sink 200B. Here, the locking component 22B suctions to the bottom of the heat sink 200B.

[0076] In some embodiments, step S220 specifically includes the following steps: In step S221, it is determined whether all of the suction components 23B of the suction mechanism 20B are in contact with the heat sink 200B during the downward movement of the suction mechanism 20B. If so, step S222 is performed; otherwise, the suction mechanism 20B is controlled to continue moving downward until it makes contact with the heat sink 200B. In step S222, the suction mechanism 20B is controlled to move downward by a first preset distance, and then the suction component 23B is controlled to adsorb the target wafer W to the heat sink 200B and make it adhere tightly. Here, the first preset distance may be designed based on specific design requirements.

[0077] In step S221, the suction component 23B provides feedback of the contact signal; that is, the suction component 23B is equipped with a contact switch, which turns on if it is in contact with the heat sink 200B and turns off if it is not in contact, thereby determining whether the suction component 23B is in contact with the heat sink 200B based on the contact signal.

[0078] In step S222, a gas channel connected to a vacuum adsorption device is provided inside the adsorption component 23B, and the target wafer W is adsorbed by activating the vacuum adsorption device and creating a vacuum. The adsorption component 23B is aligned with the second gas hole 210B of the second gas channel 230B of the heat sink 200B, and the target wafer W is adsorbed by the second gas hole 210B, then the second gas channel 230B, and then the first gas hole 220B, at which point the target wafer W is positioned above the first gas hole 220B of the heat sink 200B. At this point, it is determined whether each adsorption component 23B has adsorbed the target wafer W based on the acquired vacuum level information of each adsorption component 23B. If it is determined that each adsorption component 23B has adsorbed the target wafer W, step S230 is performed.

[0079] In some embodiments, step S230 specifically includes the following steps. Step S231 involves controlling one of the locking components 22B to move toward the center line of the suction mechanism 20B to reach the corresponding second target position. In step S232, it is determined whether any of the locking parts 22B have reached the second target position. If so, step S233 is performed; otherwise, an alarm is issued. Step S233 involves controlling the locking component 22B to move it upward by a second preset distance, so that the free end of either locking component 22B contacts the bottom of the heat sink 200B, thereby clamping the heat sink 200B.

[0080] In step S231, the locking component 22B moves toward the center line of the suction mechanism 20B and then hooks onto the heat sink 200B from below. Here, the edge of the heat sink 200B has multiple notches 240B, and the locking component 22B moves from the notches 240B until a portion of it is positioned beneath the heat sink 200B, that is, it moves toward the center line of the suction mechanism 20B, thereby supporting the heat sink 200B.

[0081] In step S232, the photoelectric sensors on each locking component 22B scan the position of the locking component 22B to determine whether the locking component 22B has reached the second target position. If no signal is detected, it is determined that the locking component 22B may be subject to interference from the heat sink 200B, and an alarm is issued.

[0082] In step S233, the second preset distance is any value between 0.5 and 1 mm, for example, 0.5 mm, 0.7 mm, or 1 mm. This ensures that the locking component 22B contacts the underside of the heat sink 200 B.

[0083] In this embodiment, the following steps are included after step S240. Step S241 involves controlling one of the locking components 22B to make it adhere to the bottom of the heat sink 200B. Step S242 involves obtaining vacuum information of a vacuum suction device connected to any of the locking components 22B. Step S243 is performed to determine whether the corresponding locking component 22B is adsorbing the heat sink 200B based on any of the vacuum level information. If so, step S244 is performed; otherwise, an alarm is issued. In step S244, the suction mechanism 20B is controlled to move the heat sink 200B on which the target wafer W is placed upward to the first target position.

[0084] In step S241, a first gas passage 223B is provided inside the locking component 22B, which attracts the heat sink 200B when it comes into contact with the bottom of the heat sink 200B. As can be seen from Figure 25, the uppermost part of the lateral portion 222B has an adsorption port 224B that communicates with the first gas passage 223B, and the heat sink 200B is attracted by the adsorption port 224B. In this embodiment, not only is the target wafer W attracted, but the bottom of the heat sink 200B is also attracted, thereby preventing the heat sink 200B from moving or sliding off.

[0085] In step S243, this embodiment can ensure the stability of the heat sink 200B during transport by determining the vacuum level.

[0086] In some embodiments, the control method further includes the following steps prior to step S100. Step S10 is performed to obtain the position information of the target wafer W in the wafer case 90B. In step S20, the wafer acquisition device 80B is controlled based on position information to grasp the target wafer W and transfer it to the wafer position calibration station, thereby performing angle adjustment and eccentricity adjustment with respect to the target wafer W. In step S30, the wafer acquisition device 80B is controlled to move the target wafer W, after adjustment is complete, from the wafer position calibration station to the heat sink inspection device 70B.

[0087] In step S10, the scanning device scans the wafer case 90B to determine the position of the target wafer W within the wafer case 90B, that is, to determine which level of the wafer case 90B the target wafer W is placed on, and to determine whether the target wafer W is placed horizontally. Because the wafer is manually placed into the wafer case 90B by hand, the target wafer W may be placed at an angle. If the device detects that the target wafer W is not placed horizontally within the wafer case 90B, it issues an alarm.

[0088] In step S20, the manipulator 81B of the wafer acquisition device 80B supports the target wafer W from below and acquires the wafer by adsorption to the underside of the target wafer W. Before controlling the manipulator 81B to remove the target wafer W from the wafer case 90B, it is necessary to determine the vacuum level. This determines whether the manipulator 81B is firmly adsorbing the target wafer W, preventing the target wafer W from falling during movement and ensuring its stability during transport. Specifically, the angle adjustment and eccentricity adjustment of the target wafer W are performed by first finding the tilt angle and center of the target wafer W using the imaging device, then performing angle adjustment, followed by XY direction adjustment.

[0089] In this embodiment, step S100 specifically includes the following steps. In step S110, after receiving the target wafer W by passing it through the second support frame of the heat sink 200B, the second support frame is controlled to lower it and separate it from the heat sink 200B, thereby bringing the target wafer W into close contact with the heat sink 200B. In step S120, the target wafer W is adsorbed by applying a vacuum to the first vacuum adsorption gas channel 250B within the heat sink 200B. In step S130, it is determined whether the target wafer W is adsorbed onto the heat sink 200B and is within a preset area of ​​the heat sink 200B. If so, step S140 is performed; otherwise, the wafer acquisition device 80B is controlled to retrieve the target wafer W, and step S110 is performed again. In step S140, the mounting base 71B is controlled to extend from the side toward the heat sink inspection device 70B to below the suction mechanism 20B of the wafer transport device.

[0090] In step S110, the heat sink 200B has a through hole 260B extending along its thickness direction, and the second support frame passes through the through hole 260B and rises above the heat sink 200B, placing the target wafer W directly onto the second support frame. Subsequently, the second support frame moves downward, lowering the target wafer W onto the heat sink 200B in conjunction with it. Then the second support frame continues to descend, separating from the through hole 260B, and thereby separating from the heat sink 200B.

[0091] In step 120, the first vacuum adsorption gas channel 250B is perforated, and as shown in Figure 27, one gas hole of the first vacuum adsorption gas channel 250B is located on the upper surface of the heat sink 200B, and the other gas hole is located on the lower surface of the heat sink 200B. Vacuum is drawn from the gas hole on the lower surface, thereby creating a vacuum in the first vacuum adsorption gas channel 250B, which causes the target wafer W to adsorb onto the heat sink 200B. In other words, at least two types of gas channels are provided inside the heat sink 200B. One type of gas channel is used for adsorption by the adsorption mechanism 20B and is provided at the edge of the heat sink 200B, i.e., the second gas channel 230B. The other type of gas channel is provided along the thickness direction of the heat sink 200B, i.e., the first vacuum adsorption gas channel 250B, and when the heat sink 200B and the target wafer W are located on the mounting base 71B, the vacuum adsorption mechanism is used to adsorb the target wafer W by the first vacuum adsorption gas channel 250B.

[0092] In step S130, the vacuum level is similarly used to determine whether the wafer is adsorbed onto the heat sink 200B. If the edge of the target wafer W is not within the preset area of ​​the heat sink 200B, a positional tolerance exceedance occurs if the target wafer W is severely warped.

[0093] In step S140, the distance the mounting base 71B moves laterally is set based on specific design requirements. Steps S140 and 210 may be performed simultaneously.

[0094] In some embodiments, step S300 specifically includes the following steps: In step S310, after controlling and returning the mounting base 71B to its original position, the second vacuum adsorption gas flow path within the pressure-resistant platform 11B is controlled to adsorb gas onto the lower sealing lid 12B. In step S320, it is determined whether the lower sealing lid 12B is adsorbed based on the vacuum level information of the second vacuum adsorption gas flow path. If so, step S430 is performed; otherwise, an alarm is issued. In step S330, the pressure-resistant platform 11B of the wafer-level aging inspection apparatus 10B is controlled to extend from the side toward the heat sink inspection apparatus 70B until it is below the suction mechanism 20B.

[0095] In step S320, the lower sealing lid 12B is positioned by positioning pins and mounted on the pressure-resistant platform 11B. Since the positioning pins may be faulty, it is necessary to determine the position of the lower sealing lid 12B again by the vacuum level. The lower sealing lid 12B prevents it from sliding off or becoming misaligned as the pressure-resistant platform 11B is extended from the side.

[0096] In this embodiment, the following steps are included after step S400. In step S410, the heat sink 200B and the target wafer W are adsorbed by evacuating the second vacuum adsorption gas channel within the pressure-resistant platform 11B. Step S420 involves removing the clamping of the locking component 22B with respect to the heat sink 200B on which the target wafer W is placed. Step S430 is performed, in which the suction mechanism 20B is controlled to return to its original position.

[0097] In this embodiment, after the pressure-resistant platform 11B is adsorbed to the heat sink 200B and the target wafer W, the suction force of the locking component 22B to the heat sink 200B and the suction force of the adsorption component 23B to the target wafer W is removed. This ensures that the heat sink 200B and the target wafer W are always adsorbed during the transport process, preventing any interruption of the suction force, and thus preventing the target wafer W from warping.

[0098] In step S410, the second vacuum adsorption gas channel within the pressure-resistant platform 11B not only adsorbs to the lower sealing lid 12B, but also communicates with the first vacuum adsorption gas channel 250B of the heat sink 200B when the heat sink 200B and the target wafer W are located inside the lower sealing lid 12B, and is used to adsorb the target wafer W.

[0099] In this embodiment, step S500 specifically includes the following steps. Step S510 involves controlling and restoring the pressure-resistant platform 11B. Step S520 is performed to acquire the location information of the target wafer W. In step S530, the target wafer W and the inspection probe are aligned based on the position information of the target wafer W, thereby performing positional adjustment with respect to the target wafer W. In step S540, the push-up mechanism 13B is controlled to push the lower sealing lid 12B upward, thereby connecting it to the upper lid plate assembly to form an inspection chamber, thereby performing a wafer level aging inspection on the target wafer W.

[0100] In step S530, the target wafer W is photographed twice by the imaging device, the tilt angle of the target wafer W is calculated from the line connecting the two chips, the angle is then adjusted, and then the position is aligned in the XY direction.

[0101] In some embodiments, the control method further includes the following steps after step S500. Step S610 involves controlling the lower sealing lid 12B to separate it from the lid plate assembly 14B and lower it onto the pressure-resistant platform 11B. Step S620 involves controlling the pressure-resistant platform 11B to be extended from the side toward the heat sink inspection device 70B. In step S630, the suction mechanism 20B is controlled to remove the heat sink 200B on which the target wafer W is placed from the lower sealing lid 12B. Step S640 is performed to control and restore the pressure-resistant platform 11B. In step S650, the mounting base 71B of the heat sink inspection device 70B is controlled to extend it from the side toward the wafer level aging inspection device 10B. In step S660, the suction mechanism 20B is controlled to place the heat sink 200B on which the target wafer W is placed onto the mounting base 71B. Step S670 is performed, in which the mounting base 71B is controlled to return to its original position. In step S680, the wafer acquisition device 80B is controlled to transfer the wafer from the heat sink 200B into the wafer case 90B.

[0102] In this embodiment, after the wafer level aging inspection of the target wafer W is completed, the push-up mechanism 13B is first controlled to move the lower sealing lid 12B downward in conjunction with it, thereby returning it to its original position. Next, the pressure-resistant platform 11B is controlled to extend it from the side toward the heat sink inspection device 70B to below the suction mechanism 20B.

[0103] This embodiment, by designing a fully automated wafer loading and unloading device, enables the rapid and convenient transfer of the heatsink 200B and the target wafer W into the wafer level aging inspection device 10B. It offers a high degree of automation, high loading reliability, and high convenience of use. Furthermore, the overall device has a simple and compact structure, effectively improving space utilization.

[0104] While this specification provides and describes in detail several exemplary embodiments of the present invention, those skilled in the art should understand that, without departing from the spirit and scope of the invention, many other variations or modifications that conform to the principles of the invention can still be directly determined or derived based on the content disclosed herein. Therefore, the scope of the present invention should be understood and determined to cover all such other variations or modifications.

Claims

1. A wafer transport device for transporting a heat sink on which wafers are placed, comprising a suction mechanism and a lifting mechanism that can move the suction mechanism in conjunction with the heat sink along the vertical direction, wherein the suction mechanism is A first support frame that is annular and connected to the lifting mechanism, A plurality of suction components are arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame, and are provided to simultaneously provide suction force to the bottom of the wafer, thereby causing the wafer to adhere closely to the heat sink. A wafer transport device comprising a plurality of locking components arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame, which are controlled and simultaneously provided to lock the heat sink on which the wafer is placed and to provide an adhesive force to the heat sink, thereby preventing the heat sink on which the wafer is placed from falling off during movement according to the adhesive mechanism.

2. The wafer transport apparatus according to claim 1, further comprising a plurality of sliding assemblies, each of which corresponds to one of the locking components and slidably connects the locking component to the first support frame, thereby causing the locking component to slide under control along the radial direction of the first support frame, thereby being used to switch between a first position in which it is locked to the heat sink and a second position in which it is separated from the heat sink.

3. The locking component is L-shaped and has a vertical portion and a horizontal portion, the horizontal portion being provided to contact the bottom of the heatsink when the locking component moves toward the center of the first support frame, thereby supporting the heatsink. The wafer transport apparatus according to claim 2, wherein a first gas passage is provided inside the locking component, thereby adsorbing the heat sink when it comes into contact with the bottom of the heat sink.

4. The wafer transport apparatus according to claim 3, further comprising a drive assembly provided on the first support frame and cooperating with a plurality of the sliding assemblies, thereby being controlled to simultaneously interlock the locking components to switch between a first position and a second position.

5. The aforementioned drive assembly At least one first power source mounted on the uppermost part of the first support frame, The wafer transport apparatus according to claim 4, comprising: an annular connecting component attached to the first support frame and arranged concentrically with the first support frame, the annular connecting component connected to a first power source and cooperating with a plurality of the sliding assemblies, the annular connecting component being provided to rotate in conjunction with the first power source so as to simultaneously cause the plurality of the sliding assemblies to slide in conjunction, thereby causing the plurality of locking components to move in conjunction.

6. The sliding assembly includes an upper sliding component connected to the locking component and a lower sliding component connected to the first support frame, wherein the upper sliding component is provided with a contact portion. The wafer transport apparatus according to claim 5, wherein the annular connecting component is provided with a plurality of first projections having inclined surfaces, each of the first projections corresponding to the contact portion of one of the sliding assemblies, and the first projections are provided so as the annular connecting component rotates, the contact portion slides along the inclined surface, thereby driving the upper sliding component to slide along the lower sliding component.

7. A plurality of first sensors attached to the first support frame, each of which corresponds to one of the sliding assemblies and is used to detect whether the corresponding locking component is in a first position, The wafer transport apparatus according to claim 6, further comprising a plurality of second sensors attached to the first support frame, each of the second sensors corresponding to one of the sliding assemblies and used to detect whether the corresponding locking component is in the second position.

8. The system further includes controllers connected to a plurality of the aforementioned suction components, the first power source, the first sensor, and the second sensor, respectively. The controller is provided to simultaneously receive signals indicating that multiple suction components are in contact with the heat sink, and then control the first power source to synchronize the annular connecting component and move it along the circumferential direction of the first support frame. The controller is also configured to, after receiving a signal fed back by the first sensor, control the locking component to attract the heat sink, and then control the lifting mechanism to move the attraction mechanism along the vertical direction in conjunction with it. The wafer transport apparatus according to claim 7, wherein the controller is also provided to control the lifting mechanism after receiving a signal fed back by the second sensor, thereby coordinating the movement of the suction mechanism along the vertical direction.

9. The uppermost part of the heat sink is provided with a first region for placing the wafer and a second region other than the first region, and a plurality of second gas passages are provided inside the heat sink, each of the second gas passages corresponding to one of the adsorption components and having a first gas hole located in the first region and a second gas hole located in the second region. A wafer transport apparatus according to any one of claims 1 to 8, wherein a third gas channel is provided inside the adsorption component, extending downward from the first support frame, and the third gas channel is provided so as to communicate with the second gas hole of the corresponding second gas channel when the adsorption component comes into contact with the heat sink.

10. A wafer transport device according to any one of claims 1 to 8 for placing a heat sink on which the wafer is placed inside or removing it from the inspection chamber of a wafer level aging inspection device, A heat sink inspection device provided to the side of the wafer transport device and having a mounting base for placing the heat sink, wherein the mounting base is controlled to extend from the heat sink inspection device, thereby causing the wafer transport device to place the heat sink on which the wafer is placed onto the mounting base or to remove the heat sink on which the wafer is placed from the mounting base. A wafer loading and unloading device comprising: a wafer acquisition device provided to the side of the heat sink inspection device, which is provided to take a wafer out of a wafer case, calibrate its position relative to the wafer, and then place the wafer on the heat sink located on the mounting base, and is also provided to take a wafer out of the heat sink and send it into the wafer case.

11. The mounting base includes a second support frame that can move up and down along the vertical direction. When the wafer is placed on the mounting base, the second support frame rises and passes through the heat sink to receive the wafer. The wafer loading and unloading device according to claim 10, wherein when transporting the wafer, the second support frame drops and separates from the heat sink, thereby causing the wafer to be in close contact with the heat sink.

12. The steps include: placing the heat sink on which the target wafer is placed on the mounting stand of the heat sink inspection device, and then controlling the mounting stand to extend it from the side toward the wafer level aging inspection device; The steps include controlling the adsorption mechanism to clamp the heat sink on which the target wafer is placed, After controlling the mounting base to return it to its original position, the pressure-resistant platform of the wafer-level aging inspection apparatus is controlled to extend it from the side toward the heat sink inspection apparatus, The steps include controlling the adsorption mechanism to place the heat sink on which the target wafer is placed inside the sealed lid below the pressure-resistant platform, A method for controlling a wafer loading / unloading device according to claim 10, comprising the steps of controlling the pressure-resistant platform to return it to its original position, then controlling the lower sealing lid to dock it with the lid plate assembly to form an inspection chamber, thereby performing a wafer-level aging inspection.

13. The step of controlling the adsorption mechanism to clamp the heat sink on which the target wafer is placed is, After confirming that any of the locking components of the suction mechanism is in a released state, the step of controlling the suction mechanism to move it downward, The steps include controlling any of the adsorption components of the adsorption mechanism to adsorb them onto the target wafer, A step of controlling one of the aforementioned locking parts to clamp the heat sink, The control method according to claim 12, comprising the step of controlling one of the locking components to attract onto the heat sink.

14. The step of controlling any of the adsorption components of the adsorption mechanism to adsorb them onto the target wafer is, The steps include determining whether all of the adsorption components of the adsorption mechanism are in contact with the heat sink during the downward movement of the adsorption mechanism, If so, the control method according to claim 13, further comprising the steps of controlling the adsorption mechanism to move it downward by a first predetermined distance, and then controlling the adsorption component to adsorb and adhere the target wafer to the heat sink.

15. The step of controlling one of the locking components to clamp the heat sink is, The steps include controlling one of the locking components to move toward the center line of the suction mechanism to reach the corresponding second target position, A step of determining whether any of the locking parts have reached the corresponding second target position, If so, the control method according to claim 13, comprising the step of controlling one of the locking parts to move upward by a second preset distance so that the free end of one of the locking parts contacts the bottom of the heat sink, thereby clamping the heat sink.

16. The step of controlling one of the locking components to attract it to the heat sink is, The steps include controlling one of the aforementioned locking components to make it adhere to the bottom of the heat sink, A step of acquiring vacuum level information of a vacuum suction device connected to any of the locking components, A step of determining whether the corresponding locking component is adsorbing the heat sink based on any of the vacuum information, If so, the control method according to claim 13, comprising the step of controlling the adsorption mechanism to move the heat sink on which the target wafer is placed upward in conjunction to a first target position.

17. After placing the heat sink on which the target wafer is mounted on the mounting stand of the heat sink inspection device, before controlling the mounting stand to extend it from the side toward the wafer level aging inspection device, The steps include: acquiring the position information of the target wafer in the wafer case; The steps include controlling the wafer acquisition device based on the position information to grasp the target wafer and transfer it to the wafer position calibration station, thereby performing angle adjustment and eccentricity adjustment relative to the target wafer, The control method according to claim 12, further comprising the step of controlling the wafer acquisition device to move the target wafer, after adjustment is complete, from the wafer position calibration station to the heat sink inspection device.

18. The step of placing the heat sink on which the target wafer is mounted on the mounting base of the heat sink inspection device, and then controlling the mounting base to extend it from the side toward the wafer level aging inspection device, The process involves first receiving the target wafer by passing it through the second support frame of the heat sink, then controlling the second support frame to lower it and separate it from the heat sink, thereby causing the target wafer to be in close contact with the heat sink. The steps include: adsorbing the target wafer by creating a vacuum in the first vacuum adsorption gas channel within the heat sink, and determining whether the target wafer is adsorbed on the heat sink and within a predetermined area of ​​the heat sink; If so, the control method according to claim 12, comprising the step of controlling the mounting base to extend it from the side toward the wafer level aging inspection apparatus to below the suction mechanism of the wafer transport apparatus.

19. After controlling the mounting base to return it to its original position, the step of controlling the pressure-resistant platform of the wafer-level aging inspection apparatus to extend it from the side toward the heat sink inspection apparatus is performed as follows: The steps include controlling the second vacuum adsorption gas flow path within the pressure-resistant platform to adsorb gas onto the lower sealing lid, A step of determining whether the lower sealing lid is adsorbed based on the vacuum level information of the second vacuum adsorption gas flow path, If so, the control method according to claim 12, comprising the step of controlling the pressure-resistant platform of the wafer-level aging inspection apparatus to extend it laterally toward the heat sink inspection apparatus and toward the area below the adsorption mechanism.

20. After the step of controlling the adsorption mechanism to place the heat sink on which the target wafer is placed inside the sealed lid below the pressure-resistant platform, The steps include: applying a vacuum to the second vacuum adsorption gas channel within the pressure-resistant platform to adsorb gas onto the heat sink and the target wafer, respectively; The steps include: removing the clamping of the suction mechanism with respect to the heat sink on which the target wafer is placed; The control method according to claim 12, further comprising the step of controlling and restoring the adsorption mechanism.

21. The steps described above involve controlling the pressure-resistant platform to return it to its original position, controlling the lower sealing lid to dock it with the lid plate assembly to form an inspection chamber, thereby performing wafer-level aging inspection, The steps include controlling and restoring the pressure-resistant platform, The steps include: acquiring the location information of the target wafer, The steps include aligning the target wafer and the inspection probe based on the position information of the target wafer, thereby performing positional adjustment with respect to the target wafer, The control method according to claim 12, comprising the step of controlling a push-up mechanism to push the lower sealing lid upward, thereby connecting it to the upper lid plate assembly to form an inspection chamber, thereby performing a wafer level aging inspection on the target wafer.

22. After the wafer-level aging inspection is completed, The steps include controlling the lower sealing lid to separate it from the lid plate assembly and lower it onto the pressure-resistant platform, The steps include controlling the pressure-resistant platform to extend it from the side toward the heat sink inspection device, The steps include controlling the adsorption mechanism to remove the heat sink on which the target wafer is placed from inside the lower sealed lid, The steps include controlling and restoring the pressure-resistant platform, The steps include controlling the mounting base of the heat sink inspection apparatus to extend it from the side toward the wafer level aging inspection apparatus, The steps include controlling the adsorption mechanism to place the heat sink on which the target wafer is placed onto the mounting base, The steps include controlling the mounting base to return it to its original position, The control method according to claim 12, comprising the step of controlling a wafer acquisition device to transfer the wafer from the heat sink into a wafer case.

Images